US20110101489A1 - SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME - Google Patents

SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME Download PDF

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Publication number
US20110101489A1
US20110101489A1 US12/986,531 US98653111A US2011101489A1 US 20110101489 A1 US20110101489 A1 US 20110101489A1 US 98653111 A US98653111 A US 98653111A US 2011101489 A1 US2011101489 A1 US 2011101489A1
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United States
Prior art keywords
dielectric
sicoh
layer
atoms
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/986,531
Inventor
Daniel C. Edelstein
Stephen M. Gates
Alfred Grill
Michael Lane
Robert D. Miller
Deborah A. Neumayer
Son Van Nguyen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority to US11/040,778 priority Critical patent/US7892648B2/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US12/986,531 priority patent/US20110101489A1/en
Publication of US20110101489A1 publication Critical patent/US20110101489A1/en
Assigned to INTEL CORPORATION reassignment INTEL CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INTERNATIONAL BUSINESS MACHINES CORPORATION
Abandoned legal-status Critical Current

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