US20100273291A1 - Decontamination of mocvd chamber using nh3 purge after in-situ cleaning - Google Patents
Decontamination of mocvd chamber using nh3 purge after in-situ cleaning Download PDFInfo
- Publication number
- US20100273291A1 US20100273291A1 US12/731,030 US73103010A US2010273291A1 US 20100273291 A1 US20100273291 A1 US 20100273291A1 US 73103010 A US73103010 A US 73103010A US 2010273291 A1 US2010273291 A1 US 2010273291A1
- Authority
- US
- United States
- Prior art keywords
- chamber
- gas
- processing chamber
- substrate
- sccm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004140 cleaning Methods 0.000 title claims description 237
- 238000010926 purge Methods 0.000 title claims description 109
- 238000011065 in-situ storage Methods 0.000 title description 47
- 238000005202 decontamination Methods 0.000 title 1
- 230000003588 decontaminative effect Effects 0.000 title 1
- 238000012545 processing Methods 0.000 claims abstract description 219
- 238000000034 method Methods 0.000 claims abstract description 203
- 239000000758 substrate Substances 0.000 claims abstract description 162
- 238000000151 deposition Methods 0.000 claims abstract description 64
- 230000008021 deposition Effects 0.000 claims abstract description 56
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 47
- 150000002367 halogens Chemical class 0.000 claims abstract description 47
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 358
- 230000008569 process Effects 0.000 claims description 166
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 58
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 46
- 238000006243 chemical reaction Methods 0.000 claims description 34
- 239000006227 byproduct Substances 0.000 claims description 33
- 239000000460 chlorine Substances 0.000 claims description 32
- 229910052801 chlorine Inorganic materials 0.000 claims description 32
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 31
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 27
- 238000012546 transfer Methods 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 229910052733 gallium Inorganic materials 0.000 claims description 22
- 238000011282 treatment Methods 0.000 claims description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 19
- -1 compound nitride Chemical class 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 229910021529 ammonia Inorganic materials 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 11
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052794 bromium Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 238000004891 communication Methods 0.000 claims 2
- 238000005137 deposition process Methods 0.000 abstract description 20
- 239000000463 material Substances 0.000 abstract description 12
- 239000012808 vapor phase Substances 0.000 abstract description 4
- 150000004678 hydrides Chemical class 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 55
- 239000002243 precursor Substances 0.000 description 53
- 229910002601 GaN Inorganic materials 0.000 description 49
- 239000012159 carrier gas Substances 0.000 description 47
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 46
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 30
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 13
- 229910052734 helium Inorganic materials 0.000 description 13
- 239000001307 helium Substances 0.000 description 13
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 13
- 229910052786 argon Inorganic materials 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 229910052754 neon Inorganic materials 0.000 description 12
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 12
- 229910052724 xenon Inorganic materials 0.000 description 12
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 12
- 150000004820 halides Chemical class 0.000 description 11
- 150000002431 hydrogen Chemical class 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- 239000012530 fluid Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 6
- 238000011066 ex-situ storage Methods 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010587 phase diagram Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 241000270295 Serpentes Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- USZGMDQWECZTIQ-UHFFFAOYSA-N [Mg](C1C=CC=C1)C1C=CC=C1 Chemical compound [Mg](C1C=CC=C1)C1C=CC=C1 USZGMDQWECZTIQ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
- 239000010702 perfluoropolyether Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 229940083608 sodium hydroxide Drugs 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Definitions
- Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after a substrate is processed in the chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes and/or hydride vapor phase epitaxial (HVPE) deposition processes.
- MOCVD metal-organic chemical vapor deposition
- HVPE hydride vapor phase epitaxial
- Group III-V films are finding greater importance in the development and fabrication of a variety of semiconductor devices, such as short wavelength Light-emitting diodes (LEDs), laser diodes (LDs), and electronic devices including high power, high frequency, high temperature transistors and integrated circuits.
- LEDs Light-emitting diodes
- LDs laser diodes
- electronic devices including high power, high frequency, high temperature transistors and integrated circuits.
- short wavelength LEDs e.g., blue/green to ultraviolet
- GaN gallium nitride
- MOCVD metal organic chemical vapor deposition
- This chemical vapor deposition method is generally performed in a reactor having a temperature controlled environment to assure the stability of a first precursor gas which contains at least one element from Group III, such as gallium (Ga).
- a second precursor gas such as ammonia (NH 3 )
- NH 3 ammonia
- the two precursor gases are injected into a processing zone within the reactor where they mix and move towards a heated substrate in the processing zone.
- a carrier gas may be used to assist in the transport of the precursor gases towards the substrate.
- the precursors react at the surface of the heated substrate to form a Group III-nitride layer, such as GaN, on the substrate surface.
- HVPE hydride vapor phase epitaxy
- a carrier gas is used to carry Group III halide and Group V vapor towards the substrate within the reactor.
- the mixed Group III halide, such as GaCl 3 , and nitrogen containing precursor, such as ammonia (NH 3 ), carried by the carrier gas is subsequently eptaxially grown into a Group III-V layer (GaN) on the substrate surface.
- Unwanted deposition on the interior surfaces such as the walls and the showerheads of the processing chambers may occur in both MOCVD and HVPE chambers during MOCVD and HVPE processes. Such unwanted deposition may create particles and flakes within the chamber, resulting in the drift of process conditions and more importantly affecting the process reproducibility and uniformity.
- the steel parts of the reactor may be cleaned with a sodium-hydroxide or potassium-hydroxide solution, accelerated by heating or addition of peroxide additives, while the quartz and graphite parts are cleaned using a cleaning solution such as nitro-hydrochloric acid (HCl:HNO 3 ) containing solution or hydrofluoric acid containing solution.
- a cleaning solution such as nitro-hydrochloric acid (HCl:HNO 3 ) containing solution or hydrofluoric acid containing solution.
- HCl:HNO 3 nitro-hydrochloric acid
- Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes and/or hydride vapor phase epitaxial (HVPE) deposition processes.
- MOCVD metal-organic chemical vapor deposition
- HVPE hydride vapor phase epitaxial
- the method comprises depositing one or more Group III containing layers over a substrate disposed in the processing chamber, transferring the substrate out of the processing chamber, pulsing a halogen cleaning gas into the processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the processing chamber, and pulsing a purge gas into the processing chamber after pulsing the halogen cleaning gas to remove reaction by-products formed from the reaction of the halogen cleaning gas with the unwanted deposition build-up from the processing chamber, wherein the pulsing a purge gas immediately follows the pulsing a halogen cleaning gas to remove reaction by-products from the interior surfaces of the processing chamber before the reaction by-products condense on the interior surface of the substrate processing chamber.
- a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber comprises positioning a substrate on a susceptor in a processing region of a substrate processing chamber comprising a showerhead for supplying processing gases to the processing region, depositing one or more gallium containing layers over the substrate disposed in the processing region, transferring the substrate out of the substrate processing chamber, pulsing chlorine gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces and the showerhead of the substrate processing chamber, and pulsing a first purge gas into the processing chamber to remove the chlorine gas and reaction by-products formed from the reaction of the chlorine gas with the unwanted deposition build-up from the substrate processing chamber.
- an integrated processing system for manufacturing compound nitride semiconductor devices comprises one or more substrate processing chambers operable to form one or more Group III compound nitride semiconductor layers on one or more substrates positioned in the substrate processing chamber, a halogen gas source coupled with at least one of the one or more substrate processing chambers operable for pulsing a halogen gas into the substrate processing chamber to remove at least a portion of unwanted deposition build-up deposited when forming one or more Group III compound nitride semiconductor layers on the one or more substrates from one or more interior surfaces of the substrate processing chambers, and a purge gas source coupled with at least one of the one or more substrate processing chamber operable for pulsing purge gas into the one or more substrate processing chamber to remove reaction by-products formed from the reaction of the halogen gas with the unwanted deposition build-up from the substrate processing chamber.
- FIG. 1A is a gallium-chloride phase diagram
- FIG. 1B is a schematic illustration of a structure of a GaN-based LED
- FIG. 1C is a schematic illustration of a GaN based LD structure
- FIG. 2 is a schematic top view illustrating one embodiment of a processing system for fabricating compound nitride semiconductor devices according to embodiments described herein;
- FIG. 3 is a schematic cross-sectional view of one embodiment of a metal-organic chemical vapor deposition (MOCVD) chamber for fabricating compound nitride semiconductor devices according to embodiments described herein;
- MOCVD metal-organic chemical vapor deposition
- FIG. 4 is a schematic cross-sectional view of one embodiment of a hydride vapor phase epitaxy (HVPE) chamber for fabricating compound nitride semiconductor devices according to embodiments described herein;
- HVPE hydride vapor phase epitaxy
- FIG. 5 is a flow diagram of one embodiment of an in-situ cleaning process that may be used for cleaning substrate processing chambers according to embodiments described herein;
- FIG. 6A is a flow diagram of one embodiment of an in-situ cleaning process that may be used for cleaning substrate processing chambers according to embodiments described herein;
- FIG. 6B is a flow diagram of one embodiment of an in-situ pulse cleaning process that may be used for cleaning substrate processing chambers according to embodiments described herein;
- FIG. 7 is a flow diagram of one embodiment of an in-situ cleaning process that may be used for cleaning substrate processing chambers according to embodiments described herein;
- FIG. 8 is a flow diagram of one embodiment of a cleaning process that may be used for cleaning a substrate processing chamber such as an HVPE chamber according to embodiments described herein;
- FIG. 9A is a SIMS depth profile of full LED growth after the chamber cleaning process described herein.
- FIG. 9B is a SIMS depth profile of full LED growth after the chamber cleaning process described herein.
- Embodiments described herein provide improved methods and apparatus for chamber cleaning which may be performed in-situ to remove unwanted deposition build-up off the interior surfaces of a substrate processing chamber thus reducing particle contamination while maintaining system uptime.
- the chamber cleaning process is performed by pulsing a halogen containing gas, such as chlorine containing cleaning gas, into the substrate processing chamber to convert the unwanted deposition, such as gallium coating, on the surfaces of the chamber and the chamber components into a gaseous form, such as GaCl 3 , which may then be removed from the chamber.
- a halogen containing gas such as chlorine containing cleaning gas
- FIG. 1A is a gallium-chloride (GaCl 3 ) phase diagram.
- the main reaction product of a chlorine cleaning process is generally gallium chloride (GaCl 3 ).
- GaCl 3 condenses inside the chamber. Based on pressure-temperature phase diagram for GaCl 3 shown in FIG. 1A , it is possible to predict conditions favorable for keeping GaCl 3 in the vapor phase and preventing any residual deposition or condensation inside the chamber, especially on the showerhead. In certain embodiments, a temperature greater than 100° C. and a pressure lower than 20 Torr is required for keeping a reaction product such as GaCl 3 in the gas phase.
- FIG. 1B One example of a nitride-based structure that may be formed using any combination of MOCVD and/or HVPE techniques is illustrated in FIG. 1B as a GaN-based LED structure 100 . It is fabricated over a substrate 104 . Substrate size may range from 50 mm-100 mm in diameter or larger. It is to be understood that the substrates may consist of at least one of sapphire, SiC, GaN, silicon, quartz, GaAs, AlN, and glass.
- An undoped gallium nitride (u-GaN layer) followed by an n-type GaN layer 112 is deposited over a GaN or aluminum nitride (AlN) buffer layer 108 formed over the substrate.
- An active region of the device is embodied in a multi-quantum-well layer 116 , shown in the drawing to comprise an InGaN layer.
- a p-n junction is formed with an overlying p-type AlGaN layer 120 , with a p-type GaN layer 124 acting as a contact layer.
- MOCVD deposition is accomplished by providing flows of suitable precursors to the processing chamber and using thermal processes to achieve deposition.
- a GaN layer may be deposited using Ga and nitrogen containing precursors, perhaps with a flow of a fluent gas like N 2 , H 2 , and NH 3 .
- HVPE deposition is used.
- the GaN layer may be deposited using HVPE techniques by flowing a Group III halide vapor formed by reacting a Group III source, such as a gallium (Ga) metal source, with a halide, such as hydrogen chloride (HCl) gas, forming Group III halide vapor.
- a Group III source such as a gallium (Ga) metal source
- a halide such as hydrogen chloride (HCl) gas
- a nitrogen containing precursor such as ammonia (NH 3 )
- NH 3 ammonia
- a carrier gas is used to carry Group III halide and Group V vapor towards the substrate within the reaction zone.
- the mixed Group III halide, such as GaCl 3 , and nitrogen containing precursor, such as ammonia (NH 3 ) carried by the carrier gas is subsequently eptaxially grown into a Group III-V layer (GaN) on the substrate surface.
- An InGaN layer may be deposited using Ga, N, and In precursors, perhaps with a flow of a fluent gas.
- An AlGaN layer may be deposited using Ga, N, and Al precursors, also perhaps with a flow of a fluent gas.
- the GaN buffer layer 108 has a thickness of about 500 ⁇ , and may have been deposited at a temperature of about 550° C. Subsequent deposition of the u-GaN and n-GaN layer 112 is typically performed at a higher temperature, such as around 1,050° C. in one embodiment.
- the u-GaN and n-GaN layer 112 is relatively thick, with deposition of a thickness on the order of about 4 ⁇ m requiring about 140 minutes for deposition.
- the InGaN multi-quantum-well (MQW) layer 116 may have a thickness of about 750 ⁇ , which may be deposited over a period of about 40 minutes at a temperature of about 750° C.
- the p-AlGaN layer 120 may have a thickness of about 200 ⁇ , which may be deposited in about five minutes at a temperature from about 950° C. to about 1020° C.
- the thickness of the contact layer 124 that completes the structure may be about 0.4 ⁇ m in one embodiment, and may be deposited at a temperature of about 1,050° C.
- dopants such as silicon (Si) or magnesium (Mg) may be added to the films.
- the films may be doped by adding small amounts of dopant gases during the deposition process.
- dopant gases may include Bis(cyclopentadienyl) magnesium (Cp 2 Mg or (C 5 H 5 ) 2 Mg).
- FIG. 1C is a schematic illustration of one example of a GaN based LD structure 150 formed on a substrate 105 .
- the substrate 105 may be similar to the substrate 104 of FIG. 1B .
- the LD structure 150 is formed on the substrate 105 after a thermal cleaning procedure and a pretreatment process.
- the thermal cleaning procedure may be performed by exposing the substrate 105 to a cleaning gas mixture comprising ammonia and carrier gas while the substrate 105 is being heated.
- the pretreatment process comprises exposing the substrate to a pretreatment gas mixture while the substrate is heated an elevated temperature range.
- the pretreatment gas mixture is an etching agent comprising a halogen gas.
- the LD structure 150 is a stack of formed on the substrate 105 .
- the LD structure 150 starts from an n-type GaN contact layer 152 .
- the LD structure 150 further comprises an n-type cladding layer 154 .
- the cladding layer 154 may comprise AlGaN.
- An undoped guide layer 156 is formed over the cladding layer 154 .
- the guide layer 156 may comprise InGaN.
- An active layer 158 having a multiquantum well (MQW) structure is formed on the guide layer 156 .
- An undoped guide layer 160 is formed over the active layer 158 .
- a p-type electron block layer 162 is formed over the undoped guide layer 160 .
- a p-type contact GaN layer 164 is formed over the p-type electron block layer 162 .
- GaN gallium rich depositions cause problems due to the nature of gallium itself which acts as a trap, reacting with the gas phase precursors used for deposition of subsequent single layers of LED, such as, for example, tri-methyl indium (TMI), tri-methyl aluminum (TMA), n-type dopants such as silane (SiH 4 ) and disilane (Si 2 H 6 ), and p-type dopants such as Cp 2 Mg.
- TMI tri-methyl indium
- TMA tri-methyl aluminum
- n-type dopants such as silane (SiH 4 ) and disilane (Si 2 H 6 )
- p-type dopants such as Cp 2 Mg.
- FIG. 2A is a schematic top view illustrating one embodiment of a processing system 200 comprising one HVPE chamber 202 and multiple MOCVD chamber 203 a and 203 b for fabricating compound nitride semiconductor devices according to embodiments described herein.
- the environment within the processing system 200 is maintained as a vacuum environment or at a pressure below atmospheric pressure. In certain embodiments it may be desirable to backfill the processing system 200 with an inert gas such as nitrogen.
- an inert gas such as nitrogen.
- the processing system 200 may comprise 3 MOCVD chambers.
- the processes described herein may be performed in a single MOCVD chamber. It should also be understood that although a cluster tool is shown, the embodiments described herein may be performed using linear track systems.
- an additional chamber 204 is coupled with the transfer chamber 206 .
- the additional chamber 204 comprises an additional processing chamber such as an MOCVD chamber or an HVPE chamber.
- the additional chamber 204 may comprise a metrology chamber.
- the additional chamber 204 may contain pre-processing or post-processing chambers, such as service chambers that are adapted for degassing, orientation, cool down, pretreatment/preclean, post-anneal and the like.
- the transfer chamber is six-sided and hexagonal in shape with six positions for process chamber mounting.
- the transfer chamber 206 may have other shapes and have five, seven, eight, or more sides with a corresponding number of process chamber mounting positions.
- the HVPE chamber 202 is adapted to perform HVPE processes in which gaseous metal halides are used to epitaxially grow thick layers of compound nitride semiconductor materials on heated substrates.
- the HVPE chamber 202 comprises a chamber body 214 where a substrate is placed to undergo processing, a chemical delivery module 218 from which gas precursors are delivered to the chamber body 214 , and an electrical module 222 that includes the electrical system for the HVPE chamber of the processing system 200 .
- Each MOCVD chamber 203 a , 203 b comprises a chamber body 212 a , 212 b forming a processing region where a substrate is placed to undergo processing, a chemical delivery module 216 a , 216 b from which gases such as precursors, purge gases, and cleaning gases are delivered to the chamber body 212 a , 212 b and an electrical module 220 a , 220 b for each MOCVD chamber 203 a , 203 b that includes the electrical system for each MOCVD chamber of the processing system 200 .
- Each MOCVD chamber 203 a , 203 b is adapted to perform CVD processes in which metalorganic elements react with metal hydride elements to form thin layers of compound nitride semiconductor materials.
- the processing system 200 comprises a transfer chamber 206 housing a robot assembly 207 , an HVPE chamber 202 , a first MOCVD chamber 203 a , and a second MOCVD chamber 203 b coupled with the transfer chamber 206 , a loadlock chamber 208 coupled with the transfer chamber 206 , a batch loadlock chamber 209 , for storing substrates, coupled with the transfer chamber 206 , and a load station 210 , for loading substrates, coupled with the loadlock chamber 208 .
- the transfer chamber 206 comprises a robot assembly 207 operable to pick up and transfer substrates between the loadlock chamber 208 , the batch loadlock chamber 209 , the HVPE chamber 202 , the first MOCVD chamber 203 a , and the second MOCVD chamber 203 b.
- the transfer chamber 206 may remain under vacuum and/or at a pressure below atmosphere during the process.
- the vacuum level of the transfer chamber 206 may be adjusted to match the vacuum level of corresponding processing chambers. For example, when transferring a substrate from a transfer chamber 206 into the HVPE chamber 202 (or vice versa), the transfer chamber 206 and the HVPE chamber 202 may be maintained at the same vacuum level. Then, when transferring a substrate from the transfer chamber 206 to the load lock chamber 208 or batch load lock chamber 209 (or vice versa), the transfer chamber vacuum level may match the vacuum level of the loadlock chamber 208 or batch load lock chamber 209 even through the vacuum level of the loadlock chamber 208 or batch load lock chamber 209 and the HVPE chamber 202 may be different.
- the vacuum level of the transfer chamber may be adjusted.
- the substrate is transferred in an environment having greater than 90% N 2 .
- the substrate is transferred in a high purity NH 3 environment.
- the substrate is transferred in an environment having greater than 90% NH 3 .
- the substrate is transferred in a high purity H 2 environment.
- the substrate is transferred in an environment having greater than 90% H 2 .
- the robot assembly transfers a carrier plate 211 under vacuum loaded with substrates into the HVPE chamber 202 to undergo a first deposition process.
- the carrier plate 211 size may range from 200 mm-750 mm.
- the carrier plate 211 may be formed from a variety of materials, including SiC or SiC-coated graphite.
- the robot assembly transfers the carrier plate 211 under vacuum into the first MOCVD chamber 203 a to undergo a second deposition process.
- the robot assembly transfers the carrier plate 211 under vacuum into the second MOCVD chamber 203 b to undergo a third deposition process.
- the carrier plate 211 is transferred from either the HVPE chamber 202 or one of the MOCVD chambers 203 a , 203 b back to the loadlock chamber 208 . In one embodiment, the carrier plate 211 is then released toward the load station 210 . In another embodiment, the carrier plate 211 may be stored in either the loadlock chamber 208 or the batch load lock chamber 209 prior to further processing in the HVPE chamber 202 or MOCVD chambers 203 a , 203 b .
- One exemplary system is described in U.S. patent application Ser. No. 12/023,572, filed Jan. 31, 2008, now published as US 2009-0194026, titled PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES, which is hereby incorporated by reference in its entirety.
- a system controller 260 controls activities and operating parameters of the processing system 200 .
- the system controller 260 includes a computer processor and a computer-readable memory coupled to the processor.
- the processor executes system control software, such as a computer program stored in memory. Aspects of the processing system and methods of use are further described in U.S. patent application Ser. No. 11/404,516, filed Apr. 14, 2006, now published as US 2007-0240631, titled EPITAXIAL GROWTH OF COMPOUND NITRIDE STRUCTURES, which is hereby incorporated by reference in its entirety.
- FIG. 3 is a schematic cross-sectional view of an MOCVD chamber 203 (also referred to herein as 203 a and 203 b ) according to embodiments described herein.
- the MOCVD chamber 203 comprises a chamber body 212 , a chemical delivery module 216 for delivering precursor gases, carrier gases, cleaning gases, and/or purge gases, a remote plasma system 326 with a plasma source, a susceptor or substrate support 314 , and a vacuum system 312 .
- the chamber 203 includes a chamber body 212 that encloses a processing volume 308 .
- a showerhead assembly 304 is disposed at one end of the processing volume 308
- the carrier plate 211 is disposed at the other end of the processing volume 308 .
- the carrier plate 211 may be disposed on the substrate support 314 .
- the substrate support 314 has z-lift capability for moving in a vertical direction, as shown by arrow 315 .
- the z-lift capability may be used to move the substrate support either upward and closer to the showerhead assembly 304 or downward and further away from the showerhead assembly 304 .
- the substrate support 314 comprises a heating element, for example, a resistive heating element (not shown) for controlling the temperature of the substrate support 314 and consequently controlling the temperature of the carrier plate 211 and substrates 340 positioned on the substrate support 314 .
- the showerhead assembly 304 has a first processing gas channel 304 A coupled with the chemical delivery module 216 for delivering a first precursor or first process gas mixture to the processing volume 308 , a second processing gas channel 304 B coupled with the chemical delivery module 216 for delivering a second precursor or second process gas mixture to the processing volume 308 and a temperature control channel 304 C coupled with a heat exchanging system 370 for flowing a heat exchanging fluid to the showerhead assembly 304 to help regulate the temperature of the showerhead assembly 304 .
- Suitable heat exchanging fluids include but are not limited to water, water-based ethylene glycol mixtures, a perfluoropolyether (e.g. Galden® fluid), oil-based thermal transfer fluids, or similar fluids.
- the first precursor or first process gas mixture may be delivered to the processing volume 308 via gas conduits 346 coupled with the first processing gas channel 304 A in the showerhead assembly 304 and the second precursor or second process gas mixture may be delivered to the processing volume 308 via gas conduits 345 coupled with the second gas processing channel 304 B.
- the plasma may be delivered to the processing volume 308 via conduit 304 D.
- the process gas mixtures or precursors may comprise one or more precursor gases or process gases as well as carrier gases and dopant gases which may be mixed with the precursor gases.
- Exemplary showerheads that may be adapted to practice embodiments described herein are described in U.S. patent application Ser. No. 11/873,132, filed Oct. 16, 2007, now published as US 2009-0098276, entitled MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD, U.S. patent application Ser. No. 11/873,141, filed Oct. 16, 2007, now published as US 2009-0095222, entitled MULTI-GAS SPIRAL CHANNEL SHOWERHEAD, and U.S. patent application Ser. No. 11/873,170, filed Oct. 16, 2007, now published as US 2009-0095221, entitled MULTI-GAS CONCENTRIC INJECTION SHOWERHEAD, all of which are incorporated by reference in their entireties.
- a lower dome 319 is disposed at one end of a lower volume 310 , and the carrier plate 211 is disposed at the other end of the lower volume 310 .
- the carrier plate 211 is shown in process position, but may be moved to a lower position where, for example, the substrates 340 may be loaded or unloaded.
- An exhaust ring 320 may be disposed around the periphery of the carrier plate 211 to help prevent deposition from occurring in the lower volume 310 and also help direct exhaust gases from the chamber 203 to exhaust ports 309 .
- the lower dome 319 may be made of transparent material, such as high-purity quartz, to allow light to pass through for radiant heating of the substrates 340 .
- the radiant heating may be provided by a plurality of inner lamps 321 A and outer lamps 321 B disposed below the lower dome 319 and reflectors 366 may be used to help control the chamber 203 exposure to the radiant energy provided by inner and outer lamps 321 A, 321 B. Additional rings of lamps may also be used for finer temperature control of the substrates 340 .
- a purge gas (e.g., a nitrogen containing gas) may be delivered into the chamber 203 from the showerhead assembly 304 and/or from inlet ports or tubes (not shown) disposed below the carrier plate 211 and near the bottom of the chamber body 212 .
- the purge gas enters the lower volume 310 of the chamber 203 and flows upwards past the carrier plate 211 and exhaust ring 320 and into multiple exhaust ports 309 which are disposed around an annular exhaust channel 305 .
- An exhaust conduit 306 connects the annular exhaust channel 305 to a vacuum system 312 which includes a vacuum pump 307 .
- the chamber 203 pressure may be controlled using a valve system which controls the rate at which the exhaust gases are drawn from the annular exhaust channel.
- Other aspects of the MOCVD chamber 203 are described in U.S.
- a cleaning gas (e.g., a halogen gas) may be delivered into the chamber 203 from the showerhead assembly 304 and/or from inlet ports or tubes (not shown) disposed near the processing volume 308 .
- the cleaning gas enters the processing volume 308 of the chamber 203 to remove deposits from chamber components such as the substrate support 314 and the showerhead assembly 304 and exits the chamber via multiple exhaust ports 309 which are disposed around the annular exhaust channel 305 .
- the chemical delivery module 216 supplies chemicals to the MOCVD chamber 203 .
- Reactive gases, carrier gases, purge gases, and cleaning gases are supplied from the chemical delivery system through supply lines and into the chamber 203 .
- the gases are supplied through supply lines and into a gas mixing box where they are mixed together and delivered to showerhead 304 .
- the gases are delivered to the showerhead 304 through separate supply lines and mixed within the chamber 203 .
- supply lines for each of the gases include shut-off valves that can be used to automatically or manually shut-off the flow of the gas into its associated line, and mass flow controllers or other types of controllers that measure the flow of gas or liquid through the supply lines.
- Supply lines for each of the gases may also include concentration monitors for monitoring precursor concentrations and providing real time feedback, backpressure regulators may be included to control precursor gas concentrations, valve switching control may be used for quick and accurate valve switching capability, moisture sensors in the gas lines measure water levels and can provide feedback to the system software which in turn can provide warnings/alerts to operators.
- the gas lines may also be heated to prevent precursors and cleaning gases from condensing in the supply lines.
- some of the sources may be liquid rather than gas.
- the chemical delivery module includes a liquid injection system or other appropriate mechanism (e.g. a bubbler) to vaporize the liquid. Vapor from the liquids is then usually mixed with a carrier gas as would be understood by a person of skill in the art.
- Remote plasma system 326 can produce plasma for selected applications, such as chamber cleaning or etching residue from a process substrate.
- the remote plasma system 326 is a remote microwave plasma system.
- Plasma species produced in the remote plasma system 326 from precursors supplied via an input line are sent via a conduit for dispersion through the showerhead assembly 304 to the MOCVD chamber 203 .
- Precursor gases for a cleaning application may include chlorine containing gases, fluorine containing gases, iodine containing gases, bromine containing gases, nitrogen containing gases, and/or other reactive elements.
- Remote plasma system 326 may also be adapted to deposit CVD layers flowing appropriate deposition precursor gases into remote plasma system 326 during a layer deposition process.
- the remote plasma system 326 is used to deliver active nitrogen species to the processing volume 308 .
- the temperature of the walls of the MOCVD chamber 203 and surrounding structures, such as the exhaust passageway, may be further controlled by circulating a heat-exchange liquid through channels (not shown) in the walls of the chamber.
- the heat-exchange liquid can be used to heat or cool the chamber walls depending on the desired effect. For example, hot liquid may help maintain an even thermal gradient during a thermal deposition process, whereas a cool liquid may be used to remove heat from the system during an in-situ plasma process, or to limit formation of deposition products on the walls of the chamber.
- the showerhead assembly 304 may also have heat exchanging passages (not shown). Typical heat-exchange fluids water-based ethylene glycol mixtures, oil-based thermal transfer fluids, or similar fluids.
- heating beneficially reduces or eliminates condensation of undesirable reactant products and improves the elimination of volatile products of the process gases and other contaminants that might contaminate the process if they were to condense on the walls of cool vacuum passages and migrate back into the processing chamber during periods of no gas flow.
- MOCVD chamber 203 may be modified to accommodate and process substrates in an in-line conveyor processing system, such as processing system 200 , by modifying the chamber to include a conveyor.
- FIG. 4 is a schematic cross-sectional view of one embodiment of a hydride vapor phase epitaxy (HVPE) apparatus 400 for fabricating compound nitride semiconductor devices according to embodiments described herein.
- the apparatus includes a chamber 402 enclosed by a lid 404 .
- Processing gas from a first gas source 410 is delivered to the chamber 402 through a gas distribution showerhead 406 .
- the first gas source 410 may comprise a nitrogen containing compound.
- the first gas source 410 may comprise ammonia.
- an inert gas such as helium or diatomic nitrogen may be introduced as well either through the gas distribution showerhead 406 or through the walls 408 of the chamber 402 .
- An energy source 412 may be disposed between the gas source 410 and the gas distribution showerhead 406 .
- the energy source 412 may comprise a heater.
- the energy source 412 may break up the gas from the gas source 410 , such as ammonia, so that the nitrogen from the nitrogen containing gas is more reactive.
- precursor material may be delivered from one or more second sources 418 .
- the one or more second sources 418 may comprise precursors such as gallium and aluminum. It is to be understood that while reference will be made to two precursors, more or less precursors may be delivered as discussed above.
- the precursor comprises gallium present in the precursor source 418 in liquid form.
- the precursor comprises aluminum present in the precursor source 418 in solid form.
- the aluminum precursor may be in solid, powder form.
- the precursor may be delivered to the chamber 402 by flowing a reactive gas over and/or through the precursor in the precursor source 418 .
- the reactive gas may comprise a chlorine containing gas such as diatomic chlorine.
- the chlorine containing gas may react with the precursor source such as gallium or aluminum to form a chloride.
- the one or more second sources 418 may comprise eutectic materials and their alloys.
- the HVPE apparatus 400 may be arranged to handle doped sources as well as at least one intrinsic source to control the dopant concentration.
- the chlorine containing gas may snake through the source boat 434 in the chamber 432 and be heated with the resistive heater 420 .
- the temperature of the chlorine containing gas may be controlled.
- the chlorine may react with the precursor faster. In other words, the temperature is a catalyst to the reaction between the chlorine and the precursor.
- the precursor may be heated by a resistive heater 420 within the second chamber 432 in the source boat 434 .
- the gallium precursor may be heated to a temperature of between about 750 degrees Celsius to about 850 degrees Celsius.
- the chloride reaction product may then be delivered to the chamber 402 .
- the reactive chloride product first enters a tube 422 where it evenly distributes within the tube 422 .
- the tube 422 is connected to another tube 424 .
- the chloride reaction product enters the second tube 424 after it has been evenly distributed within the first tube 422 .
- the chloride reaction product then enters into the chamber 402 where it mixes with the nitrogen containing gas to form a nitride layer on the substrate 416 that is disposed on a susceptor 414 .
- the susceptor 414 may comprise silicon carbide.
- the nitride layer may comprise gallium nitride or aluminum nitride for example.
- the other reaction product, such as nitrogen and chlorine, is exhausted through an exhaust 426 .
- the chamber 402 may have a thermal gradient that can lead to a buoyancy effect.
- the nitrogen based gas is introduced through the gas distribution showerhead 406 at a temperature between about 450 degrees Celsius and about 550 degrees Celsius.
- the chamber walls 408 may have a temperature of about 600 degrees Celsius to about 700 degrees Celsius.
- the susceptor 414 may have a temperature of about 1,050 to about 1,150 degrees Celsius.
- the temperature difference within the chamber 402 may permit the gas to rise within the chamber 402 as it is heated and then fall as it cools. The raising and falling of the gas may cause the nitrogen gas and the chloride gas to mix.
- the buoyancy effect will reduce the amount of gallium nitride or aluminum nitride that deposits on the walls 408 because of the mixing.
- the heating of the processing chamber 402 is accomplished by heating the susceptor 414 with a lamp module 428 that is disposed below the susceptor 414 .
- the lamp module 428 is the main source of heat for the processing chamber 402 . While shown and described as a lamp module 428 , it is to be understood that other heating sources may be used.
- Additional heating of the processing chamber 402 may be accomplished by use of a heater 430 embedded within the walls 408 of the chamber 402 .
- the heater 430 embedded in the walls 408 may provide little if any heat during the deposition process.
- a thermocouple may be used to measure the temperature inside the processing chamber.
- Output from the thermocouple may be fed back to a controller that controls the heating of the heater 430 based upon the reading from the thermocouple. For example, if the chamber is too cool, the heater 430 will be turned on. If the chamber is too hot, the heater 430 will be turned off. Additionally, the amount of heating from the heater 430 may be controlled such that a low amount of heat is provided from the heater 430 .
- the substrate 416 is normally taken out of the processing chamber 402 .
- the lamp module 428 is turned off. Without the heat from the lamp module 428 , the chamber 402 may rapidly cool.
- the gallium nitride or aluminum nitride that may have deposited on the walls 408 may have a different coefficient of thermal expansion than the walls 408 themselves. Thus, the gallium nitride or the aluminum nitride may flake off due to thermal expansion.
- the heater 430 embedded within the chamber walls 408 may be turned on to control the thermal expansion and maintain the chamber 402 at the desired chamber temperature. The control of the heater 430 may again be based upon real time feedback from the thermocouple.
- the heater 430 may be turned on or up to maintain the temperature of the chamber 402 at the desired temperature so that gallium nitride or aluminum nitride may not flake off and contaminate the substrate or land on the susceptor 414 and create an uneven susceptor 414 surface.
- the chlorine will be more effective in cleaning the depositions from the chamber walls 408 .
- FIG. 5 is a flow diagram of one embodiment of a cleaning process 500 that may be used for cleaning substrate processing chambers.
- a cleaning process 500 that may be used for cleaning substrate processing chambers.
- the substrate is transferred out of the substrate processing chamber (block 520 ).
- the carrier plate 211 is removed from the MOCVD chamber 203 the carrier plate 211 is inserted into the HVPE chamber 400 for cleaning.
- an in-situ chamber clean is performed with a halogen containing gas (block 530 ) to remove unwanted deposition on the interior surfaces of the substrate processing chamber followed by an optional post in-situ clean chamber treatment (block 540 ).
- FIG. 6 is a flow diagram of one embodiment of an in-situ cleaning process 600 that may be used for cleaning substrate processing chambers.
- the in-situ cleaning process 600 depicted in FIG. 6 may be performed as the in-situ chamber clean with halogen gas performed in block 530 of FIG. 5 .
- a cleaning gas is flowed into a processing chamber.
- the cleaning gas may any suitable halogen containing gas. Suitable halogen containing gases include fluorine containing gases, chlorine containing gases, bromine containing gases, iodine containing gases, other reactive elements, and combinations thereof.
- the cleaning gas may comprise at least one of Cl 2 , Br 2 , I 2 , F 2 , and NF 3 .
- the cleaning gas is chlorine gas (Cl 2 ).
- the processing chamber is an MOCVD chamber similar to the chamber 203 .
- the flow rates in the present disclosure are expressed as sccm per interior chamber volume.
- the interior chamber volume is defined as the volume of the interior of the chamber in which a gas can occupy.
- the interior chamber volume of chamber 203 is the volume defined by the chamber body 212 minus the volume occupied therein by the showerhead assembly 304 and by the substrate support assembly 314 .
- the cleaning gas may be flowed into the chamber at a flow rate of about 500 sccm to about 10,000 sccm. In one embodiment, the cleaning gas is flowed into the chamber at a flow rate from about 1,000 sccm to about 4,000 sccm.
- the cleaning gas is flowed into the chamber at a flow rate of about 2,000 sccm. In one embodiment, the cleaning gas may be flowed into the chamber at a flow rate of about 12.5 sccm/L to about 250 sccm/L. In one embodiment, the cleaning gas is flowed into the chamber at a flow rate from about 25 sccmL to about 100 sccm/L. In one embodiment, the cleaning gas is flowed into the chamber at a flow rate of about 50 sccm/L.
- the cleaning gas may be co-flowed with a carrier gas.
- the carrier gas may be one or more gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof.
- the carrier gas is flowed into the chamber at a flow rate from about 500 sccm to about 3,000 sccm.
- the carrier gas is flowed into the chamber at a flow rate of from about 1,000 sccm to about 2,000 sccm.
- the carrier gas is flowed into the chamber at a flow rate from about 12.5 sccm/L to about 75 sccm/L.
- the carrier gas is flowed into the chamber at a flow rate of from about 25 sccm/L to about 50 sccm/L.
- a total pressure of the chamber is from about 5 Torr to about 500 Torr. In one embodiment, the total pressure of the chamber is from about 50 Torr to about 200 Torr. Lower pressure is generally favored to keep GaCl 3 in gaseous phase.
- a temperature of the susceptor is from about 600° C. to about 700° C. In one embodiment, the temperature of the susceptor is about 650° C. In one embodiment, a temperature of the showerhead is from about 100° C. to about 200° C.
- the cleaning gas may be flowed into the processing chamber for a time period of about 2 minutes to about 10 minutes. In one embodiment, the cleaning gas may be flowed into the processing chamber for a time period of about 5 minutes. It should be understood that several cycles of cleaning may apply with an optional purge process performed in between cleaning cycles. The time period of cleaning gas flow should be generally long enough to remove gallium containing deposits, such as gallium and GaN deposits, from the surface of the chamber and the surface of the chamber components including the showerhead.
- a carrier gas may be flown in conjunction with the cleaning gas.
- the carrier gas may be one or more gases selected from the group of argon, nitrogen (N 2 ), helium, neon, and xenon, among others.
- the cleaning gas is a plasma containing cleaning gas.
- the plasma may be in-situ plasma or ex-situ plasma. In embodiments where plasma is used, the temperature during the cleaning process may be much lower.
- the processing chamber is purged/evacuated to remove cleaning by-products generated during the cleaning process.
- the purge gas may be one or more purge gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof may also be included.
- the purge gas may be identical to the optional carrier gas of block 610 .
- the processing chamber is purged by providing a purge gas at a flow rate of about 1,000 sccm to about 7,000 sccm.
- the purge gas is provided to the processing chamber at a flow rate from about 2,000 sccm to about 4,000 sccm.
- the chamber may be maintained at a total chamber pressure from about 0.5 Torr to about 10 Torr. In one embodiment, the total pressure of the chamber may be about 5 Torr. In one embodiment, a temperature of the susceptor is from about 600° C. to about 1,000° C. In one embodiment, the temperature of the susceptor is about 900° C. In one embodiment, a temperature of the showerhead is less than 100° C. In one embodiment, the purge gas may be flowed into the processing chamber for a time period of about 4 to 5 minutes. The time period of purge gas flow should be generally long enough to remove by-products of the cleaning process of block 610 from the processing chamber.
- the process chamber may be depressurized in order to remove the residual cleaning gas as well as any by-products from the processing chamber.
- the depressurization process may result in the chamber pressure being reduced to a pressure in the range of about 0.001 Torr to about 40 Torr within a time period of about 0.5 seconds to about 20 seconds.
- the purge process of block 620 may be performed by ceasing the flow of the cleaning gas while continuing to flow the carrier gas. Thus allowing the carrier gas to function as the purge gas in the purge process of block 620 .
- a cleaning gas is optionally flowed into the processing chamber.
- the cleaning gas may include halogen containing gases as described above.
- the cleaning gas is chlorine gas (Cl 2 ).
- the cleaning gas in block 630 is identical to the cleaning gas used in block 610 .
- the cleaning gases used in block 610 and block 630 are different cleaning gases.
- the cleaning gas may be flowed into the chamber at a flow rate from about 1,000 sccm to about 10,000 sccm. In one embodiment, the cleaning gas may be flowed into the chamber at a flow rate from about 3,000 sccm to about 5,000 sccm. In one embodiment, the cleaning gas may be flowed into the processing chamber at a flow rate of about 4,000 sccm. In one embodiment, the cleaning gas may be flowed into the chamber at a flow rate from about 25 sccm/L to about 250 sccm/L. In one embodiment, the cleaning gas may be flowed into the chamber at a flow rate from about 75 sccm/L to about 125 sccm/L.
- the cleaning gas may be flowed into the processing chamber at a flow rate of about 100 sccm/L.
- a carrier gas may optionally be co-flowed in conjunction with the cleaning gas.
- the carrier gas may be one or more gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof.
- the carrier gas is flowed into the chamber at a flow rate from about 25 sccm/L to about 125 sccm/L.
- the carrier gas is flowed into the chamber at a flow rate from about 2,000 sccm to about 3,000 sccm.
- the carrier gas is flowed into the chamber at a flow rate from about 50 sccm/L to about 75 sccm/L.
- the chamber may be maintained at a total chamber pressure of about 300 Torr to about 700 Torr. In one embodiment, the chamber may be maintained at a total chamber pressure of about 600 Torr.
- a temperature of the susceptor is about 400° C. to about 600° C. In one embodiment, the temperature of the susceptor is about 420° C.
- a temperature of the showerhead is greater than 200° C. In one embodiment, the showerhead temperature is greater than 260° C., for example, from about 260° C. to about 400° C.
- the cleaning gas may be flowed into the processing chamber for a time period of about 2 minutes to about 10 minutes. In one embodiment, the cleaning gas may be flowed into the processing chamber for a time period of about 3 minutes.
- an optional soak process may be performed.
- the flow of cleaning gas may be reduced while the susceptor temperature, showerhead temperature, and the chamber pressure may be maintained.
- the flow rate of the cleaning gas may be reduced relative to the flow rate in block 630 to between about 250 sccm to about 1,000 sccm.
- the flow rate of the cleaning gas may be reduced to about 500 sccm.
- the flow rate of the cleaning gas may be reduced relative to the flow rate in block 630 to between about 6.25 sccm/L to about 25 sccm/L.
- the flow rate of the cleaning gas may be reduced to about 12.5 sccm/L.
- a total pressure of the chamber is from about 300 Torr to about 700 Torr. In one embodiment, the total pressure of the chamber is about 600 Torr.
- the susceptor temperature is from about 400° C. to about 600° C. In one embodiment, the susceptor temperature is about 420° C. In one embodiment, a temperature of the showerhead is greater than 180° C. In one embodiment, the showerhead temperature is greater than 260° C., for example, from about 260° C. to about 400° C.
- the soak process may be performed for a time period of about 1 minute to about 5 minutes. In one embodiment, the soak process may be performed for a time period of about 2 minutes.
- the processing chamber may be purged/evacuated to remove cleaning by-products generated during the soak and cleaning processes.
- the purge gas may be one or more purge gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof.
- the purge gas may be identical to the optional carrier gas of block 640 .
- the processing chamber is purged by providing a purge gas at a flow rate of about 1,000 sccm to about 4,000 sccm.
- the purge gas may be flowed into the processing chamber at a flow rate of about 3,000 sccm.
- the cleaning gas may be flowed into the chamber at a flow rate from about 2,000 sccm to about 6,000 sccm. In one embodiment, the cleaning gas may be flowed into the chamber at a flow rate of about 4,000 sccm. In one embodiment, the processing chamber is purged by providing a purge gas at a flow rate of about 25 sccm/L to about 100 sccm/L. In one embodiment, the purge gas may be flowed into the processing chamber at a flow rate of about 75 sccm/L.
- the cleaning gas may be flowed into the chamber at a flow rate from about 50 sccm/L to about 150 sccm/L. In one embodiment, the cleaning gas may be flowed into the chamber at a flow rate of about 100 sccm/L. In one embodiment, the cleaning gas is co-flowed with the purge gas. In one embodiment, the total chamber pressure is from about 0.5 Torr to about 10 Torr. In one embodiment, the total chamber pressure is about 5 Torr. In one embodiment, the purge gas may be flowed into the processing chamber for a time period of about 5 minutes. The time period of purge gas flow should be generally long enough to remove by-products of the cleaning process of block 630 and the soak process of block 640 from the processing chamber.
- either or both of the purge processes of block 620 and block 650 may be performed with a nitrogen containing gas such as ammonia (NH 3 ) at an elevated temperature (>1,000° C.) to reduce the amount of residual GaCl 3 in the processing chamber after the cleaning process.
- a chamber bake process may be performed in a nitrogen containing and/or hydrogen containing atmosphere at a high temperature from about 950° C. to about 1,050° C. at a low pressure from about 0.001 Torr to about 5 Torr to ensure that any residual deposition from the chamber clean process leave the chamber completely.
- FIG. 6B is a flow diagram of one embodiment of an in-situ pulse cleaning process 660 that may be used for cleaning substrate processing chambers.
- the in-situ pulse cleaning process 660 depicted in FIG. 6 may be performed as the in-situ chamber clean with halogen gas performed in block 530 of FIG. 5 .
- the in-situ pulse cleaning process 660 shown in FIG. 6B is similar to the cleaning process 600 shown in FIG. 6A except that the initial purge/evacuation of the substrate processing chamber (block 620 ) is followed by a pulse/purge process (blocks 670 and 680 ) to remove unwanted reaction by-products from the substrate processing chamber.
- the cleaning gas is chlorine
- the chlorine gas reacts with the solid material of Gallium Nitride (GaN) deposited onto the interior surfaces of the chamber.
- Gallium tri-chloride (GaCl 3 ) gas is formed as one of the by-products.
- GaCl 3 is prone to condense on the interior surfaces of the substrate processing chamber.
- the condensed GaCl 3 serves as a passivation layer on top of any GaN film deposited on the interior surfaces of the chamber, thereby prohibiting the further etching of GaN material, rendering certain in-situ clean processes ineffective.
- a halogen containing gas such as Cl 2
- Cl 2 a halogen containing gas
- the short time span limits the amount of GaCl 3 by-product generation since only a thin layer of GaN is etched and thus formation of the GaCl 3 passivation layer is avoided.
- a purge process immediately follows to remove the GaCl 3 from the reactor before it condenses onto any surface.
- the pulse/purge sequence may be repeated as many times as desired or until the GaN film on the reactor surface is completed etched away.
- a cleaning gas is pulsed into the processing chamber.
- the cleaning gas may include halogen containing gases as described above.
- the cleaning gas is chlorine gas (Cl 2 ).
- the cleaning gas in block 670 is identical to the cleaning gas used in block 610 .
- the cleaning gases used in block 610 and block 670 are different cleaning gases.
- the cleaning gas may be pulsed into the chamber at a flow rate from about 500 sccm to about 10,000 sccm. In one embodiment, the cleaning gas may be pulsed into the chamber at a flow rate from about 500 sccm to about 1,500 sccm. In one embodiment, the cleaning gas may be pulsed into the processing chamber at a flow rate of about 700 sccm. In one embodiment, the cleaning gas may be pulsed into the chamber at a flow rate from about 12.5 sccm/L to about 250 sccm/L. In one embodiment, the cleaning gas may be pulsed into the chamber at a flow rate from about 12.5 sccm/L to about 37.5 sccm/L.
- the cleaning gas may be pulsed into the processing chamber at a flow rate of about 17.5 sccm/L. In one embodiment, the cleaning gas may be pulsed into the processing chamber for a time period of about 5 seconds to about 1 minute. In one embodiment, the cleaning gas may be pulsed into the processing chamber for a time period of about 30 seconds.
- a carrier gas may optionally be pulsed in conjunction with the cleaning gas.
- the carrier gas may be one or more gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof.
- the carrier gas is pulsed into the chamber at a flow rate from about 0 sccm to about 5,000 sccm.
- the carrier gas is flowed into the chamber at a flow rate from about 2,000 sccm to about 3,000 sccm.
- the carrier gas is pulsed into the chamber at a flow rate from about 0 sccm/L to about 125 sccm/L.
- the carrier gas is flowed into the chamber at a flow rate from about 50 sccm/L to about 75 sccm/L.
- the chamber may be maintained at a total chamber pressure of about 10 Torr to about 700 Torr. In one embodiment, the chamber may be maintained at a total chamber pressure of between about 0.5 Torr and about 50 Torr.
- a temperature of the susceptor is greater than 500° C. In one embodiment, a temperature of the susceptor is about 550° C. to about 700° C. In one embodiment, the temperature of the susceptor is about 650° C. In one embodiment, a temperature of the showerhead is greater than 180° C. In one embodiment, the showerhead temperature is greater than 260° C., for example, from about 260° C. to about 400° C.
- the processing chamber may be purged/evacuated to remove cleaning by-products generated during the pulsed cleaning processes.
- the purge gas may be one or more purge gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof.
- the purge gas may be identical to the optional carrier gas of block 640 .
- the processing chamber is purged by providing a pulse of purge gas at a flow rate of about 100 sccm to about 4,000 sccm.
- the purge gas may be pulsed into the processing chamber at a flow rate of about 500 sccm.
- the processing chamber is purged by providing a pulse of purge gas at a flow rate of about 2.5 sccm/L to about 100 sccm/L.
- the purge gas may be pulsed into the processing chamber at a flow rate of about 12.5 sccm/L.
- the total chamber pressure is from about 0.5 Torr to about 50 Torr. In one embodiment, the total chamber pressure is about 10 Torr.
- the purge/evacuation may be performed for a time period of about 5 seconds to about 1 minute. In one embodiment, the purge/evacuation may be performed for a time period of about 30 seconds. The time period of purge/evacuation flow should be generally long enough to remove by-products of the cleaning process of block 670 from the processing chamber.
- the processes of blocks 670 and 680 may be repeated. In one embodiment, between 10 and 200 pulse/purge cleaning cycles may be performed. In one embodiment, between 50 and 100 pulse/purge cleaning cycles may be performed. The number of cleaning cycles is generally dependent on the thickness of the material deposited on the chamber components during the deposition process.
- the pulse/purge sequence may be repeated as many times as desired or until the GaN film on the reactor surface is completely etched away. In certain embodiments, about 0.0001 ⁇ m/cleaning cycle to about 0.005 ⁇ m/cleaning cycle of GaN is removed from the chamber. In one embodiment, 0.003 ⁇ m/cleaning cycle is removed from the chamber.
- a longer purge process similar to the purge process of block 650 may be performed to remove any remaining reaction by-products from the chamber.
- FIG. 7 is a flow diagram of one embodiment of an in-situ cleaning process 700 that may be used for cleaning substrate processing chambers.
- the in-situ cleaning process 700 depicted in FIG. 7 may be performed as the in-situ chamber clean with halogen gas performed in block 530 of FIG. 5 .
- the processing chamber is purged/evacuated to remove unwanted reaction by-products formed during the deposition process.
- the processing chamber is an MOCVD chamber similar to the MOCVD chamber 203 .
- the purge gas may be one or more purge gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof.
- the processing chamber is purged by providing a purge gas at a flow rate of about 1,000 sccm to about 30,000 sccm.
- the purge gas is provided to the processing chamber at a flow rate from about 15,000 sccm to about 20,000 sccm.
- the processing chamber is purged by providing a purge gas at a flow rate of about 25 sccm/L to about 750 sccm/L. In one embodiment, the purge gas is provided to the processing chamber at a flow rate from about 375 sccm/L to about 500 sccm/L. In one embodiment, the chamber may be maintained at a total chamber pressure from about 0.5 Torr to about 150 Torr. In one embodiment, the total pressure of the chamber may be about 100 Torr. In one embodiment, the total chamber pressure may be varied throughout the purge process. In one embodiment, a power of from about 5 kW to about 20 kW is supplied through the susceptor. In one embodiment, the power supplied through the susceptor is about 10 kW.
- a temperature of the showerhead is less than 100° C. In one embodiment, the temperature of the showerhead is maintained at about 80° C. In one embodiment, the purge process may last for a time period of between about 30 seconds and about 5 minutes. In one embodiment, the purge process may last for about 90 seconds. The time period of purge gas flow should be generally long enough to remove by-products remaining from the deposition process. It should be understood that several cycles of cleaning may apply with an optional purge process performed in between cleaning cycles. In one embodiment, between two and ten purge cycles may be performed.
- the processing chamber may be depressurized in order to remove the residual cleaning gas as well as any by-products from the processing chamber.
- the depressurization process may result in the chamber pressure being reduced to a pressure in the range of about 0.001 Torr to about 40 Torr. In one embodiment, the depressurization may last for a time period of about 0.5 seconds to about 20 seconds.
- Block 720 it is determined whether multiple cycles of purge/evacuation are needed to remove reaction by-products from the processing chamber. If additional cycles are needed, the purge/evacuation process of block 710 is repeated until a desired level of reaction by-products are removed from the processing chamber.
- a temperature ramp process is performed after the purge/evacuation process of block 720 and prior to the cleaning gas etch 730 A or the cleaning gas plasma etch at block 730 B.
- the temperature of the susceptor may be ramped to a temperature greater than 500° C. In one embodiment, the temperature of the susceptor may be ramped to between about 550° C. to about 700° C. In one embodiment, the temperature of the susceptor may be ramped to about 650° C. The increased temperature of the susceptor helps form reactive radicals of the halogen gas. In one embodiment the temperature ramp process may be performed for a time period from about 15 seconds to about 3 minutes. In embodiments where a plasma source is used, the temperature of the susceptor may be lower since active halogen gas is formed during the plasma process.
- the cleaning gas etch of block 730 A and the cleaning gas plasma etch of block 730 B may include any suitable halogen containing gas as described herein.
- the cleaning gas is chlorine gas (Cl 2 ).
- the cleaning gas is chlorine gas
- the chlorine radicals formed by interaction with the heated susceptor will interact with GaN and Ga deposits on the interior surfaces of the chamber.
- the GaN and Ga deposits are converted to GaCl 3 during this chlorination process according to the following reactions (1) and (2) which may then be purged from the chamber.
- the cleaning gas etch begins with a high pressure process.
- High pressure helps increase the reaction rate between the cleaning gas and the unwanted deposition products such as gallium and gallium nitride in the chamber.
- a total pressure of the chamber is from about 5 Torr to about 500 Torr. In one embodiment, the total pressure of the chamber is from about 50 Torr to about 100 Torr. In one embodiment, the total pressure in the chamber is about 100 Torr.
- a higher pressure, such as 100 Torr, helps increase the reaction rate between the cleaning gas and the contaminants such as gallium in the chamber.
- the cleaning gas may be flowed into the chamber at a flow rate of from about 500 sccm to about 10,000 sccm. In one embodiment, the cleaning gas is flowed into the chamber at a flow rate from about 1,000 sccm to about 4,000 sccm. In one embodiment, the cleaning gas is flowed into the chamber at a flow rate of about 2,000 sccm. In one embodiment, during the high pressure process, the cleaning gas may be flowed into the chamber at a flow rate of from about 12.5 sccm/L to about 250 sccm/L.
- the cleaning gas is flowed into the chamber at a flow rate from about 25 sccm/L to about 100 sccm/L. In one embodiment, the cleaning gas is flowed into the chamber at a flow rate of about 50 sccm/L.
- the cleaning gas may be co-flowed with a carrier gas.
- the carrier gas may be one or more gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof.
- the carrier gas is flowed into the chamber at a flow rate from about 500 sccm to about 3,000 sccm.
- the carrier gas is flowed into the chamber at a flow rate of from about 1,000 sccm to about 2,000 sccm.
- the carrier gas is flowed into the chamber at a flow rate from about 12.5 sccm/L to about 75 sccm/L.
- the carrier gas is flowed into the chamber at a flow rate of from about 25 sccm/L to about 50 sccm/L.
- the high pressure process may be performed for a time period from about two minutes to about 10 minutes.
- the flow rate of cleaning gas may be increased during a flow rate ramping process. In one embodiment, where the flow rate of cleaning gas during the high pressure process is about 2,000 sccm, the flow rate of cleaning gas may be increased to about 4,000 sccm during the flow rate ramping process. In one embodiment, where the flow rate of cleaning gas during the high pressure process is about 50 sccm/L, the flow rate of cleaning gas may be increased to about 100 sccm/L during the flow rate ramping process. In one embodiment, the cleaning gas flow rate ramping process is performed in conjunction with the high pressure process. In another embodiment, the cleaning gas flow rate ramping process is performed after the high pressure process. In one embodiment the flow rate ramping process may be performed for a time period from about 15 seconds to about 3 minutes.
- a halogen gas such as a chlorine gas plasma may be generated for cleaning/deposition processes.
- the plasma may be in-situ plasma.
- the plasma may be ex-situ plasma.
- a remote plasma generator may be included as part of the MOCVD chamber hardware.
- chlorine gas or plasma may be delivered from above a top plate or delivered through tubes that deliver a Ga-containing precursor.
- the type of plasma that could be utilized is not limited exclusively to chlorine, but may include fluorine, iodine, or bromine.
- the source gases used to generate plasma may be halogens, such as Cl 2 , Br 2 , F 2 , or I 2 , or may be gases that contain Group V elements (e.g., N, P, or As), such as NF 3 .
- the chamber pressure is lowered to enhance the rate of evaporation.
- the chamber pressure is lowered to from about 1 mTorr to about 5 Torr.
- lower pressure is generally favored to keep GaCl 3 in gaseous phase.
- the chamber pressure is partially or completely lowered during the flow rate ramping process.
- the chamber pressure is lowered subsequent to the flow rate ramping process.
- the chamber pressure lowering process may be performed for a time period from about two minutes and about 10 minutes.
- a cleaning gas etch process is performed.
- the cleaning gas etch is performed at a high pressure.
- a total pressure of the chamber is from about 5 Torr to about 500 Torr.
- the total pressure of the chamber is from about 50 Torr to about 100 Torr.
- the total pressure in the chamber is about 100 Torr.
- the cleaning gas may be flowed into the chamber at a flow rate of about 500 sccm to about 10,000 sccm.
- the cleaning gas is flowed into the chamber at a flow rate from about 1,000 sccm to about 4,000 sccm.
- the cleaning gas may be flowed into the chamber at a flow rate of about 12.5 sccm/L to about 250 sccm/L. In one embodiment, the cleaning gas is flowed into the chamber at a flow rate from about 25 sccm/L to about 100 sccm/L. In one embodiment, the cleaning gas is flowed into the chamber at a flow rate of about 100 sccm/L. In one embodiment, the cleaning gas may be co-flowed with a carrier gas.
- the carrier gas may be one or more gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof.
- the carrier gas is flowed into the chamber at a flow rate from about 500 sccm to about 3,000 sccm. In one embodiment, the carrier gas is flowed into the chamber at a flow rate of from about 1,000 sccm to about 2,000 sccm. In one embodiment, the carrier gas is flowed into the chamber at a flow rate from about 12.5 sccm/L to about 75 sccm/L. In one embodiment, the carrier gas is flowed into the chamber at a flow rate of from about 25 sccm/L to about 50 sccm/L. In one embodiment, the cleaning gas etch process may be performed for a time period of about 2 minutes to about 10 minutes.
- Cl 2 plasma may be generated for cleaning/deposition processes.
- the plasma may be in-situ plasma.
- the plasma may be ex-situ plasma.
- the type of plasma that could be utilized is not limited exclusively to chlorine, but may include fluorine, iodine, or bromine.
- the source gases used to generate plasma may be halogens, such as Cl 2 , Br 2 , F 2 , or I 2 , or may be gases that contain Group V elements (e.g., N, P, or As), such as NF 3 .
- the temperature of the susceptor established during the temperature ramp process may be maintained throughout the process of blocks 730 A, 730 B, 740 , 750 A, and 750 B.
- a temperature of the susceptor is greater than about 500° C.
- a temperature of the susceptor is from about 550° C. to about 700° C.
- the temperature of the susceptor is about 650° C.
- a temperature of the showerhead is from about 50° C. to about 200° C.
- a temperature of the showerhead is from about 80° C. to about 100° C.
- the cleaning process of blocks 730 A, 730 B, 740 , 750 A, and 750 B may last for a time period generally long enough to remove gallium containing deposits, such as gallium and GaN deposits, from the surface of the chamber and the surface of the chamber components including the showerhead.
- Block 760 it is determined whether additional cleaning cycles are needed. It should be understood that several cycles of cleaning may apply with an optional purge process performed in between cleaning cycles. If it is determined that additional cleaning cycles are needed, the processes of blocks 730 A, 730 B, 740 , 750 A, and 750 B may be repeated. In one embodiment, between 3 and 10 cleaning cycles may be performed. The number of cleaning cycles is generally dependent on the thickness of the material deposited on the chamber components during the deposition process.
- the processing chamber is purged/evacuated to remove cleaning by-products formed during the cleaning process.
- the purge gas may be one or more purge gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof may also be included.
- the processing chamber is purged by providing a purge gas at a flow rate of about 1,000 sccm to about 30,000 sccm.
- the purge gas is provided to the processing chamber at a flow rate from about 15,000 sccm to about 20,000 sccm.
- the processing chamber is purged by providing a purge gas at a flow rate of about 25 sccm/L to about 750 sccm/L. In one embodiment, the purge gas is provided to the processing chamber at a flow rate from about 375 sccm/L to about 500 sccm/L. In one embodiment, the chamber may be maintained at a total chamber pressure from about 0.5 Torr to about 150 Torr. In one embodiment, the total pressure of the chamber may be about 100 Torr. In one embodiment, a temperature of the susceptor is greater than about 500° C. In one embodiment, a temperature of the susceptor is from about 550° C. to about 700° C.
- the temperature of the susceptor is about 650° C. In one embodiment, a temperature of the showerhead is less than 100° C. In one embodiment, the temperature of the showerhead is maintained at about 80° C. In one embodiment, the purge gas may be flowed into the processing chamber for a time period of between about 30 seconds and about 5 minutes. The time period of purge gas flow should be generally long enough to remove by-products remaining from the cleaning process.
- FIG. 8 is a flow diagram of one embodiment of an in-situ cleaning process 800 that may be used for cleaning a substrate processing chamber such as an HVPE chamber.
- the in-situ cleaning process 800 depicted in FIG. 8 may be performed as the in-situ chamber clean with halogen gas performed in block 530 of FIG. 5 .
- Exemplary embodiments of an HVPE chamber and other aspects of the HVPE chamber are described in U.S. patent application Ser. No. 11/767,520, filed Jun. 24, 2007, now published as US 2008-0314311, entitled HVPE TUBE SHOWERHEAD DESIGN and commonly assigned U.S. patent application Ser. No. 12/637,019, filed Dec. 14, 2009, 2009, entitled HVPE CHAMBER HARDWARE, both of which are herein incorporated by reference in their entirety.
- an in-situ halogen containing cleaning gas etch is performed.
- the cleaning gas etch may be performed using any suitable cleaning gas described herein.
- the cleaning gas etch is performed using chlorine gas.
- a temperature of the susceptor is greater than about 500° C.
- a temperature of the susceptor is from about 550° C. to about 700° C.
- the temperature of the susceptor is about 650° C.
- the chamber pressure is maintained from about 400 Torr to about 500 Torr.
- the chamber pressure is maintained at about 450 Torr.
- the flow rate of the cleaning gas is between about 1,000 sccm and about 5,000 sccm. In one embodiment, during the cleaning gas etch process, the flow rate of the cleaning gas is between about 25 sccm/L and about 125 sccm/L. In one embodiment, the cleaning gas etch is performed for a time period long enough to remove contaminants from the processing chamber. In one embodiment, the length of the cleaning gas etch process may vary between about 15 minutes and about 30 minutes.
- a temperature ramp process (block 820 ) is performed after the cleaning gas etch of block 810 and prior to the optional post in-situ chamber clean process of block 540 .
- the temperature may be increased from between about 600° C. to about 700° C. to between about 900° C. to about 1,100° C. in preparation for a chamber bake process.
- an optional post in-situ chamber clean treatment may be performed.
- the purpose of the post in-situ chamber clean treatment is to remove any residual cleaning by-products, e.g., residual chlorine containing compounds such as GaCl 3 , which remain in the chamber.
- a halogen gas such as chlorine
- coatings on the interior surfaces of the chamber are converted to GaCl 3 by the reaction with the chlorine-based cleaning gas. Due to the low vapor pressure of GaCl 3 , GaCl 3 condenses onto cold surfaces within the chamber, including water-cooled chamber walls or water cooled gas inlet ports, such as a showerhead.
- the residual GaCl 3 has the potential to release chlorine into layers such as GaN epitaxial layers during growth, which can be detrimental to the material crystal quality, optical, and electrical properties of the layer.
- the optional post in-situ chamber clean may be selected from the following processes: a low pressure purge, a pump/purge cycle, a chamber bake process, a showerhead flush process, and combinations thereof.
- the post in-situ chamber clean treatment is a chamber bake process.
- the chamber bake process may be performed in a nitrogen and/or hydrogen containing atmosphere at a high temperature from about 900° C. to about 1,100° C. In one embodiment, the temperature is between about 900° C. to about 1,000° C. In one embodiment, the temperature is between about 950° C. to about 1,050° C.
- the chamber bake process is performed at a low chamber pressure. In one embodiment, the low chamber pressure is from about 0.001 Torr to about 10 Torr to ensure that any residual deposition from the chamber clean process is removed from the chamber. In one embodiment, the chamber pressure is about 7.5 Torr.
- the chamber bake process is performed for a time period long enough to ensure that any residual deposition from the chamber clean process has left the chamber. In one embodiment, the bake time may vary between about 15 minutes and about 1 hour. In embodiments where the halogen containing gas is chlorine, the high temperature bake will remove residual GaCl 3 deposition from the chamber.
- the chamber bake process may be performed with a nitrogen containing gas such as ammonia (NH 3 ) at an elevated temperature to reduce the amount of residual GaCl 3 in the processing chamber after the cleaning process.
- a nitrogen containing gas such as ammonia (NH 3 ) at an elevated temperature to reduce the amount of residual GaCl 3 in the processing chamber after the cleaning process.
- the NH 3 treatment is performed by flowing about 1,000 sccm to about 10,000 sccm of NH 3 to the coated chamber with temperatures>900° C. and pressures from about 100 Torr to about 760 Torr for a time period of, for example, about 30 minutes. In one embodiment, the NH 3 treatment is performed by flowing about 25 sccm/L to about 250 sccm/L of NH 3 to the coated chamber. In one embodiment, both the NH 3 flow rate and the chamber pressure are varied and/or cycled between lower (e.g. 100 Torr) and higher pressure (760 Torr) and/or lower and higher flow rates throughout the NH 3 treatment process.
- lower e.g. 100 Torr
- higher pressure 760 Torr
- the NH 3 chamber treatment may be performed in lieu of or in conjunction with the in-situ chamber cleaning processes described herein.
- the NH 3 chamber treatment stabilizes the unwanted deposition on the interior surfaces of the chamber including the showerhead in a manner such that the crystal and optical quality of subsequently deposited films such as MQWs can be produced at a level of quality equivalent to the quality of films produced prior to chamber contamination. That is, the NH 3 chamber treatment enables the production of high quality InGaN MQWs active layers even in the presence of significant coating on the showerhead.
- NH 3 treatment efficiency may be enhanced by, for example, shortening the treatment time.
- High pressure and low pressure NH 3 flows are essential to generate turbulent flows inside the chamber and increase the chance of interaction between ammonia and the chamber coating.
- the post in-situ chamber clean treatment is a pump/purge cycle.
- the purge gas of the pump/purge cycle may be one or more purge gases selected from the group of argon, nitrogen, hydrogen, helium, neon, xenon, and combinations thereof may also be included.
- the processing chamber is purged by providing a purge gas at a flow rate of about 1,000 sccm to about 30,000 sccm. In one embodiment, the purge gas is provided to the processing chamber at a flow rate from about 15,000 sccm to about 20,000 sccm.
- the processing chamber is purged by providing a purge gas at a flow rate of about 25 sccm/L to about 750 sccm/L. In one embodiment, the purge gas is provided to the processing chamber at a flow rate from about 375 sccm/L to about 500 sccm/L. In one embodiment, the chamber may be maintained at a total chamber pressure from about 0.5 Torr to about 150 Torr. In one embodiment, the total pressure of the chamber may be about 100 Torr. In one embodiment, a temperature of the susceptor is from about 600° C. to about 1,000° C. In one embodiment, the temperature of the susceptor is about 900° C. In one embodiment, a temperature of the showerhead is less than 100° C.
- the temperature of the showerhead is maintained at about 80° C.
- the purge gas may be flowed into the processing chamber for a time period of between about 30 seconds and about 5 minutes. The time period of purge gas flow should be generally long enough to remove by-products remaining from the cleaning process.
- the post in-situ chamber clean treatment is a low pressure purge in which residual by-products in the chamber are evacuated from the chamber by lowering the pressure within the chamber to between about 0.001 Torr to about 5 Torr.
- the post in-situ chamber clean treatment comprises a showerhead flush process.
- the halogen cleaning gas e.g. Cl 2
- the showerhead gas conduits as precursors (e.g. TMG). Reaction between residual precursor gas in the gas conduit and the cleaning gas may lead to clogging of the gas conduits of the showerhead.
- an additional showerhead flush may be performed after the in-situ cleaning of block 530 .
- the showerhead flush may be performed as part of the post-in-situ clean performed in block 540 .
- the showerhead flush may be performed after the chamber bake process described herein.
- the showerhead flush may be performed prior to the chamber bake process described herein.
- the showerhead flush comprises flowing an inert gas through the conduits of the showerhead through which cleaning gases were previously flowed.
- the inert gas may comprise any of the inert gases and/or purge gases described herein.
- the inert gas flows through the gas conduits of the showerhead at a flow rate between about 100 sccm to about 1,000 sccm.
- the showerhead flush may be performed for a time period sufficient to remove residual precursor deposits from the conduits of the showerhead. In one embodiment, the showerhead flush is performed for a time period between about 2 minutes and about 20 minutes.
- a purge/evacuation process may be followed by a chamber bake process.
- the optional post in-situ chamber treatment may include the deposition of a chamber coating such as GaN or AlN to further reduce any residual chlorine gas remaining in the chamber after the in-situ cleaning process.
- a chamber coating such as GaN or AlN
- TMGa or TMAl is flown into the chamber with NH 3 to form a thin layer of GaN or AlN (between about 10 nm and about 500 nm thick) on the interior surfaces of the chamber.
- This additional GaN or AlN coating after the NH 3 treatment further reduces the chlorine level in subsequently deposited layers.
- the susceptor may be positioned from about 3 mm to about 12 mm from the showerhead during the cleaning process. In another embodiment, the susceptor may be positioned from about 5 mm to about 10 mm from the showerhead during the cleaning process. In another embodiment, the susceptor may be positioned less than 10 mm from the showerhead. Typically, during deposition, the distance between the substrate support 314 and the showerhead assembly 304 is 10 mm or greater.
- FIG. 9A is a SIMS depth profile of full LED growth after the chamber cleaning process described in FIG. 7 .
- FIG. 9B is a SIMS depth profile of full LED growth after the chamber cleaning process described in FIG. 7 .
- the quality of LEDs produced after the clean processes described herein is not affected.
- a SIMS depth profile chemical composition of a full LED, and InGaN MQWS especially are not affected by the clean processes described herein.
- the chlorine level is ⁇ 1 ⁇ 10 15 cm ⁇ 3 and is at SIMS detection limit.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/731,030 US20100273291A1 (en) | 2009-04-28 | 2010-03-24 | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
PCT/US2010/032592 WO2010129289A2 (en) | 2009-04-28 | 2010-04-27 | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
CN201080019364.4A CN102414786B (zh) | 2009-04-28 | 2010-04-27 | 在原位清洁后利用nh3净化对mocvd腔室进行去污染处理 |
TW099113537A TWI496935B (zh) | 2009-04-28 | 2010-04-28 | Mocvd腔室在原位清潔後利用nh3淨化之去汙染 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17355209P | 2009-04-28 | 2009-04-28 | |
US12/731,030 US20100273291A1 (en) | 2009-04-28 | 2010-03-24 | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
Publications (1)
Publication Number | Publication Date |
---|---|
US20100273291A1 true US20100273291A1 (en) | 2010-10-28 |
Family
ID=42992510
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/730,975 Expired - Fee Related US8110889B2 (en) | 2009-04-28 | 2010-03-24 | MOCVD single chamber split process for LED manufacturing |
US12/731,030 Abandoned US20100273291A1 (en) | 2009-04-28 | 2010-03-24 | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning |
US13/350,446 Abandoned US20120111272A1 (en) | 2009-04-28 | 2012-01-13 | Mocvd single chamber split process for led manufacturing |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/730,975 Expired - Fee Related US8110889B2 (en) | 2009-04-28 | 2010-03-24 | MOCVD single chamber split process for LED manufacturing |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/350,446 Abandoned US20120111272A1 (en) | 2009-04-28 | 2012-01-13 | Mocvd single chamber split process for led manufacturing |
Country Status (6)
Country | Link |
---|---|
US (3) | US8110889B2 (ko) |
JP (1) | JP2012525708A (ko) |
KR (1) | KR20120009504A (ko) |
CN (1) | CN102414845A (ko) |
TW (1) | TW201101531A (ko) |
WO (1) | WO2010129183A2 (ko) |
Cited By (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090098276A1 (en) * | 2007-10-16 | 2009-04-16 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US20090107403A1 (en) * | 2007-10-31 | 2009-04-30 | Moshtagh Vahid S | Brazed cvd shower head |
US20090178615A1 (en) * | 2008-01-15 | 2009-07-16 | Samsung Electro-Mechanics Co., Ltd. | Showerhead and chemical vapor deposition apparatus having the same |
US20100261340A1 (en) * | 2009-04-10 | 2010-10-14 | Applied Materials, Inc. | Cluster tool for leds |
US20110059617A1 (en) * | 2009-09-10 | 2011-03-10 | Matheson Tri-Gas, Inc. | High aspect ratio silicon oxide etch |
US20110117728A1 (en) * | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
US20110256645A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor showerhead with by-pass ports |
US20120000490A1 (en) * | 2010-07-01 | 2012-01-05 | Applied Materials, Inc. | Methods for enhanced processing chamber cleaning |
US20130005118A1 (en) * | 2011-07-01 | 2013-01-03 | Sung Won Jun | Formation of iii-v materials using mocvd with chlorine cleans operations |
US20130130476A1 (en) * | 2011-11-22 | 2013-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for cleaning film formation apparatus and method for manufacturing semiconductor device |
US20130145989A1 (en) * | 2011-12-12 | 2013-06-13 | Intermolecular, Inc. | Substrate processing tool showerhead |
DE102011056538A1 (de) | 2011-12-16 | 2013-06-20 | Aixtron Se | Verfahren zum Entfernen unerwünschter Rückstände aus einem MOCVD-Reaktor sowie zugehörige Vorrichtung |
US20140127887A1 (en) * | 2012-11-06 | 2014-05-08 | Intermolecular, Inc. | Chemical Vapor Deposition System |
CN104112662A (zh) * | 2014-07-25 | 2014-10-22 | 中国科学院半导体研究所 | 气相外延在线清洗装置及方法 |
WO2014173806A1 (de) * | 2013-04-23 | 2014-10-30 | Aixtron Se | Mocvd-schichtwachstumsverfahren mit nachfolgendem mehrstufigen reinigungschritt |
TWI470672B (zh) * | 2011-08-22 | 2015-01-21 | Soitec Silicon On Insulator | 用於鹵化物氣相磊晶系統之直接液體注入及方法 |
US20160362782A1 (en) * | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas dispenser and deposition apparatus using the same |
US9528183B2 (en) | 2013-05-01 | 2016-12-27 | Applied Materials, Inc. | Cobalt removal for chamber clean or pre-clean process |
US9644285B2 (en) | 2011-08-22 | 2017-05-09 | Soitec | Direct liquid injection for halide vapor phase epitaxy systems and methods |
CN107435140A (zh) * | 2012-06-25 | 2017-12-05 | 诺发系统公司 | 抑制前体流和衬底区外等离子体以抑制衬底处理系统寄生沉积 |
US9925569B2 (en) | 2012-09-25 | 2018-03-27 | Applied Materials, Inc. | Chamber cleaning with infrared absorption gas |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US20190169767A1 (en) * | 2016-09-14 | 2019-06-06 | Applied Materials, Inc. | Degassing chamber for arsenic related processes |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US10319603B2 (en) | 2016-10-07 | 2019-06-11 | Applied Materials, Inc. | Selective SiN lateral recess |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10354843B2 (en) | 2012-09-21 | 2019-07-16 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US10410845B2 (en) * | 2017-11-22 | 2019-09-10 | Applied Materials, Inc. | Using bias RF pulsing to effectively clean electrostatic chuck (ESC) |
US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US10424487B2 (en) | 2017-10-24 | 2019-09-24 | Applied Materials, Inc. | Atomic layer etching processes |
US10424463B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10468276B2 (en) | 2015-08-06 | 2019-11-05 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10465294B2 (en) | 2014-05-28 | 2019-11-05 | Applied Materials, Inc. | Oxide and metal removal |
US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10490418B2 (en) | 2014-10-14 | 2019-11-26 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10541113B2 (en) | 2016-10-04 | 2020-01-21 | Applied Materials, Inc. | Chamber with flow-through source |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10593553B2 (en) | 2017-08-04 | 2020-03-17 | Applied Materials, Inc. | Germanium etching systems and methods |
US10600639B2 (en) | 2016-11-14 | 2020-03-24 | Applied Materials, Inc. | SiN spacer profile patterning |
US10607867B2 (en) | 2015-08-06 | 2020-03-31 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10770346B2 (en) | 2016-11-11 | 2020-09-08 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
CN112309815A (zh) * | 2019-07-26 | 2021-02-02 | 山东浪潮华光光电子股份有限公司 | 生产led外延片的mocvd系统维护保养后的恢复方法 |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10943788B2 (en) | 2012-02-29 | 2021-03-09 | Applied Materials, Inc. | Abatement and strip process chamber in a load lock configuration |
CN112538628A (zh) * | 2019-09-20 | 2021-03-23 | 力晶积成电子制造股份有限公司 | 铝层的蚀刻后保护方法 |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
TWI759515B (zh) * | 2017-07-28 | 2022-04-01 | 美商克萊譚克公司 | 具有強制流通自然對流之雷射維持等離子光源 |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US11361939B2 (en) | 2017-05-17 | 2022-06-14 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US20220349051A1 (en) * | 2021-04-29 | 2022-11-03 | Asm Ip Holding B.V. | Reactor systems and methods for cleaning reactor systems |
US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US11915950B2 (en) | 2017-05-17 | 2024-02-27 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
WO2024097507A1 (en) * | 2022-11-01 | 2024-05-10 | Lam Research Corporation | Reducing particle buildup in processing chambers |
WO2024141309A1 (de) | 2022-12-28 | 2024-07-04 | Aixtron Se | Verfahren zum abscheiden von gallium nitrid gan auf silizium si |
US12057329B2 (en) | 2016-06-29 | 2024-08-06 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US12087573B2 (en) | 2020-07-09 | 2024-09-10 | Lam Research Corporation | Modulation of oxidation profile for substrate processing |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011500961A (ja) | 2007-10-11 | 2011-01-06 | バレンス プロセス イクウィップメント,インコーポレイテッド | 化学気相成長反応器 |
KR20120099632A (ko) * | 2009-10-07 | 2012-09-11 | 어플라이드 머티어리얼스, 인코포레이티드 | Led 제조를 위한 개선된 다중 챔버 분할 프로세스 |
EP2711974A4 (en) * | 2011-05-19 | 2015-03-11 | Furukawa Co Ltd | METHOD FOR WASHING COMPONENTS OF A SEMICONDUCTOR PRODUCTION APPARATUS, APPARATUS FOR WASHING A COMPONENT OF A SEMICONDUCTOR PRODUCTION APPARATUS, AND STEAM PHASE GROWER APPARATUS |
CN103022268A (zh) * | 2011-09-22 | 2013-04-03 | 理想能源设备(上海)有限公司 | 硅基薄膜太阳能电池制造方法及其制造装置 |
JP5766647B2 (ja) * | 2012-03-28 | 2015-08-19 | 東京エレクトロン株式会社 | 熱処理システム、熱処理方法、及び、プログラム |
JP5551730B2 (ja) * | 2012-03-28 | 2014-07-16 | 日本電信電話株式会社 | 半導体薄膜の製造方法 |
KR101411423B1 (ko) * | 2012-06-15 | 2014-06-25 | 주식회사 티지오테크 | 금속 할로겐 가스 및 질화 가스가 단일유입관으로 공급되는 배치식 박막 형성 장치 |
JP6153401B2 (ja) * | 2013-07-02 | 2017-06-28 | 株式会社ニューフレアテクノロジー | 気相成長装置および気相成長方法 |
US9276190B2 (en) | 2013-10-01 | 2016-03-01 | The Pen | Practical method of producing an aerogel composite continuous thin film thermoelectric semiconductor material by modified MOCVD |
JP6123688B2 (ja) * | 2014-01-29 | 2017-05-10 | 東京エレクトロン株式会社 | 成膜装置 |
DE102014102039A1 (de) * | 2014-02-18 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Nitrid-Verbindungshalbleiterschicht |
JP2015156418A (ja) * | 2014-02-20 | 2015-08-27 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
KR102145205B1 (ko) | 2014-04-25 | 2020-08-19 | 삼성전자주식회사 | 반도체 소자 제조방법 및 증착 장치의 유지보수방법 |
JP2016105471A (ja) * | 2014-11-20 | 2016-06-09 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
DE102015101462A1 (de) * | 2015-02-02 | 2016-08-04 | Aixtron Se | Verfahren und Vorrichtung zum Abscheiden einer III-V-Halbleiterschicht |
JP6332089B2 (ja) * | 2015-03-16 | 2018-05-30 | 豊田合成株式会社 | 半導体素子の製造方法 |
JP6499493B2 (ja) * | 2015-04-10 | 2019-04-10 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
DE112015006632B4 (de) * | 2015-06-18 | 2023-09-21 | Kochi Prefectural Public University Corporation | Verfahren zur Bildung eines Metalloxidfilms |
TWI782220B (zh) | 2015-09-22 | 2022-11-01 | 美商應用材料股份有限公司 | 清洗方法 |
US10861693B2 (en) | 2015-12-18 | 2020-12-08 | Applied Materials, Inc. | Cleaning method |
TWI692021B (zh) * | 2016-07-05 | 2020-04-21 | 伯思達綠能科技股份有限公司 | Led製造用圖案化藍寶石基板的氮化鎵薄膜清除裝置及其清除方法 |
CN108133985A (zh) * | 2017-12-22 | 2018-06-08 | 安徽三安光电有限公司 | 一种氮化物发光二极管 |
JP7164632B2 (ja) * | 2018-06-08 | 2022-11-01 | アプライド マテリアルズ インコーポレイテッド | フラットパネルプロセス機器用の温度制御ガスディフューザー |
JP7137070B2 (ja) * | 2018-12-03 | 2022-09-14 | 日本電信電話株式会社 | 窒化物半導体光電極の製造方法 |
FR3098019B1 (fr) * | 2019-06-25 | 2022-05-20 | Aledia | Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication |
KR20240118817A (ko) * | 2021-12-03 | 2024-08-05 | 아익스트론 에스이 | 프로세스 챔버에서 제5 족 원소를 포함하는 층을 증착시키고 그리고 프로세스 챔버의 후속 세정을 위한 방법 및 디바이스 |
WO2024170078A1 (en) * | 2023-02-15 | 2024-08-22 | Ams-Osram International Gmbh | Epitaxy reactor and method for operating the same |
Citations (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4592306A (en) * | 1983-12-05 | 1986-06-03 | Pilkington Brothers P.L.C. | Apparatus for the deposition of multi-layer coatings |
US4763602A (en) * | 1987-02-25 | 1988-08-16 | Glasstech Solar, Inc. | Thin film deposition apparatus including a vacuum transport mechanism |
US4851295A (en) * | 1984-03-16 | 1989-07-25 | Genus, Inc. | Low resistivity tungsten silicon composite film |
USD329839S (en) * | 1990-01-31 | 1992-09-29 | Hohner Automation Societe Anonyme | Incremental coder |
US5273588A (en) * | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
US5348911A (en) * | 1987-06-30 | 1994-09-20 | Aixtron Gmbh | Material-saving process for fabricating mixed crystals |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
US5647911A (en) * | 1993-12-14 | 1997-07-15 | Sony Corporation | Gas diffuser plate assembly and RF electrode |
US5667592A (en) * | 1996-04-16 | 1997-09-16 | Gasonics International | Process chamber sleeve with ring seals for isolating individual process modules in a common cluster |
US5686738A (en) * | 1991-03-18 | 1997-11-11 | Trustees Of Boston University | Highly insulating monocrystalline gallium nitride thin films |
US5715361A (en) * | 1995-04-13 | 1998-02-03 | Cvc Products, Inc. | Rapid thermal processing high-performance multizone illuminator for wafer backside heating |
US5756400A (en) * | 1995-12-08 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for cleaning by-products from plasma chamber surfaces |
US5762755A (en) * | 1991-05-21 | 1998-06-09 | Genus, Inc. | Organic preclean for improving vapor phase wafer etch uniformity |
US5814239A (en) * | 1995-07-29 | 1998-09-29 | Hewlett-Packard Company | Gas-phase etching and regrowth method for Group III-nitride crystals |
US5855675A (en) * | 1997-03-03 | 1999-01-05 | Genus, Inc. | Multipurpose processing chamber for chemical vapor deposition processes |
US5858471A (en) * | 1994-04-08 | 1999-01-12 | Genus, Inc. | Selective plasma deposition |
US5871586A (en) * | 1994-06-14 | 1999-02-16 | T. Swan & Co. Limited | Chemical vapor deposition |
US5963834A (en) * | 1996-12-20 | 1999-10-05 | Tokyo Electron Limited | Method for forming a CVD film |
US5983906A (en) * | 1997-01-24 | 1999-11-16 | Applied Materials, Inc. | Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment |
US6086673A (en) * | 1998-04-02 | 2000-07-11 | Massachusetts Institute Of Technology | Process for producing high-quality III-V nitride substrates |
US6156581A (en) * | 1994-01-27 | 2000-12-05 | Advanced Technology Materials, Inc. | GaN-based devices using (Ga, AL, In)N base layers |
US6176936B1 (en) * | 1997-07-22 | 2001-01-23 | Nec Corporation | In-situ chamber cleaning method of CVD apparatus |
US6200893B1 (en) * | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
US6206972B1 (en) * | 1999-07-08 | 2001-03-27 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
US20010006845A1 (en) * | 1998-06-18 | 2001-07-05 | Olga Kryliouk | Method and apparatus for producing group-III nitrides |
US6270569B1 (en) * | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
US6274495B1 (en) * | 1998-09-03 | 2001-08-14 | Cvc Products, Inc. | Method for fabricating a device on a substrate |
US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6309465B1 (en) * | 1999-02-18 | 2001-10-30 | Aixtron Ag. | CVD reactor |
US6551848B2 (en) * | 2001-05-26 | 2003-04-22 | Samsung Electro-Mechanics Co., Ltd. | Method for fabricating semiconductor light emitting device |
US20040000321A1 (en) * | 2002-07-01 | 2004-01-01 | Applied Materials, Inc. | Chamber clean method using remote and in situ plasma cleaning systems |
US6692568B2 (en) * | 2000-11-30 | 2004-02-17 | Kyma Technologies, Inc. | Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon |
US20040129671A1 (en) * | 2002-07-18 | 2004-07-08 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
US20050032345A1 (en) * | 2003-08-05 | 2005-02-10 | University Of Florida | Group III-nitride growth on Si substrate using oxynitride interlayer |
US20050101155A1 (en) * | 2003-11-12 | 2005-05-12 | Applied Materials, Inc., A Delaware Corporation | Ramp temperature techniques for improved mean wafer before clean |
US6903025B2 (en) * | 2001-08-30 | 2005-06-07 | Kabushiki Kaisha Toshiba | Method of purging semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
US20060018639A1 (en) * | 2003-10-27 | 2006-01-26 | Sundar Ramamurthy | Processing multilayer semiconductors with multiple heat sources |
US20060040475A1 (en) * | 2004-08-18 | 2006-02-23 | Emerson David T | Multi-chamber MOCVD growth apparatus for high performance/high throughput |
US20060051966A1 (en) * | 2004-02-26 | 2006-03-09 | Applied Materials, Inc. | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US20060174815A1 (en) * | 2002-05-17 | 2006-08-10 | Butcher Kenneth S A | Process for manufacturing a gallium rich gallium nitride film |
US20070108466A1 (en) * | 2005-08-31 | 2007-05-17 | University Of Florida Research Foundation, Inc. | Group III-nitrides on Si substrates using a nanostructured interlayer |
US20070144557A1 (en) * | 2005-12-27 | 2007-06-28 | Lee Ki-Hoon | Cleaning method of apparatus for depositing AI-containing metal film and AI-containing metal nitride film |
US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
US20070243702A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials | Dual-side epitaxy processes for production of nitride semiconductor structures |
US20070254458A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Buffer-layer treatment of MOCVD-grown nitride structures |
US20070259502A1 (en) * | 2006-05-05 | 2007-11-08 | Applied Materials, Inc. | Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE |
US20080050889A1 (en) * | 2006-08-24 | 2008-02-28 | Applied Materials, Inc. | Hotwall reactor and method for reducing particle formation in GaN MOCVD |
US7338828B2 (en) * | 2005-05-31 | 2008-03-04 | The Regents Of The University Of California | Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) |
US20080272463A1 (en) * | 2004-09-27 | 2008-11-06 | Kenneth Scott Alexander Butcher | Method and Apparatus for Growing a Group (III) Metal Nitride Film and a Group (III) Metal Nitride Film |
US20080314317A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Showerhead design with precursor pre-mixing |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
US20090020768A1 (en) * | 2007-07-20 | 2009-01-22 | Gallium Enterprise Pty Ltd., An Australian Company | Buried contact devices for nitride-based films and manufacture thereof |
US20090029528A1 (en) * | 2007-07-26 | 2009-01-29 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
US20090095713A1 (en) * | 2004-10-26 | 2009-04-16 | Advanced Technology Materials, Inc. | Novel methods for cleaning ion implanter components |
US20090136652A1 (en) * | 2007-06-24 | 2009-05-28 | Applied Materials, Inc. | Showerhead design with precursor source |
US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
US20090194026A1 (en) * | 2008-01-31 | 2009-08-06 | Burrows Brian H | Processing system for fabricating compound nitride semiconductor devices |
US7611915B2 (en) * | 2001-07-23 | 2009-11-03 | Cree, Inc. | Methods of manufacturing light emitting diodes including barrier layers/sublayers |
US20100210067A1 (en) * | 2009-02-11 | 2010-08-19 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapor deposition |
US7838315B2 (en) * | 2007-11-23 | 2010-11-23 | Samsung Led Co., Ltd. | Method of manufacturing vertical light emitting diode |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6749687B1 (en) * | 1998-01-09 | 2004-06-15 | Asm America, Inc. | In situ growth of oxide and silicon layers |
US6464843B1 (en) | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
US6242347B1 (en) * | 1998-09-30 | 2001-06-05 | Applied Materials, Inc. | Method for cleaning a process chamber |
US6373114B1 (en) | 1998-10-23 | 2002-04-16 | Micron Technology, Inc. | Barrier in gate stack for improved gate dielectric integrity |
US6413839B1 (en) | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
KR100304664B1 (ko) | 1999-02-05 | 2001-09-26 | 윤종용 | GaN막 제조 방법 |
US6540838B2 (en) | 2000-11-29 | 2003-04-01 | Genus, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
JP3384795B2 (ja) | 1999-05-26 | 2003-03-10 | 忠弘 大見 | プラズマプロセス装置 |
US6569765B1 (en) | 1999-08-26 | 2003-05-27 | Cbl Technologies, Inc | Hybrid deposition system and methods |
US6489241B1 (en) | 1999-09-17 | 2002-12-03 | Applied Materials, Inc. | Apparatus and method for surface finishing a silicon film |
US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
US6897119B1 (en) | 1999-12-22 | 2005-05-24 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
US6551399B1 (en) | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
DE50100603D1 (de) | 2000-02-04 | 2003-10-16 | Aixtron Ag | Vorrichtung und verfahren zum abscheiden einer oder mehrerer schichten auf ein substrat |
JP4849705B2 (ja) | 2000-03-24 | 2012-01-11 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ生成導入部材及び誘電体 |
ATE518239T1 (de) | 2000-04-17 | 2011-08-15 | Mattson Tech Inc | Verfahren zur uv-vorbehandlung von ultradünnem oxynitrid zur herstellung von siliziumnitridschichten |
US6616870B1 (en) | 2000-08-07 | 2003-09-09 | Shipley Company, L.L.C. | Method of producing high aspect ratio domes by vapor deposition |
DE10043601A1 (de) | 2000-09-01 | 2002-03-14 | Aixtron Ag | Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten |
DE10048759A1 (de) | 2000-09-29 | 2002-04-11 | Aixtron Gmbh | Verfahren und Vorrichtung zum Abscheiden insbesondere organischer Schichten im Wege der OVPD |
DE10056029A1 (de) | 2000-11-11 | 2002-05-16 | Aixtron Ag | Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor |
DE10057134A1 (de) | 2000-11-17 | 2002-05-23 | Aixtron Ag | Verfahren zum Abscheiden von insbesondere kristallinen Schichten sowie Vorrichtung zur Durchführung des Verfahrens |
US6905547B1 (en) | 2000-12-21 | 2005-06-14 | Genus, Inc. | Method and apparatus for flexible atomic layer deposition |
WO2002080225A2 (en) | 2001-03-30 | 2002-10-10 | Technologies And Devices International Inc. | Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques |
DE10118130A1 (de) | 2001-04-11 | 2002-10-17 | Aixtron Ag | Vorrichtung oder Verfahren zum Abscheiden von insbesondere kristallinen Schichten auf insbesondere kristallinen Substraten aus der Gasphase |
DE10124609B4 (de) | 2001-05-17 | 2012-12-27 | Aixtron Se | Verfahren zum Abscheiden aktiver Schichten auf Substraten |
DE10163394A1 (de) | 2001-12-21 | 2003-07-03 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten |
WO2003054929A2 (de) | 2001-12-21 | 2003-07-03 | Aixtron Ag | Verfahren zum abscheiden von iii-v-halbleiterschichten auf einem nicht-iii-v-substrat |
KR100568701B1 (ko) | 2002-06-19 | 2006-04-07 | 니폰덴신뎅와 가부시키가이샤 | 반도체 발광 소자 |
JP4352783B2 (ja) | 2002-08-23 | 2009-10-28 | 東京エレクトロン株式会社 | ガス供給系及び処理システム |
US7115896B2 (en) | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
US7018940B2 (en) | 2002-12-30 | 2006-03-28 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
JP4026529B2 (ja) | 2003-04-10 | 2007-12-26 | 東京エレクトロン株式会社 | シャワーヘッド構造及び処理装置 |
EP1629522A4 (en) | 2003-05-30 | 2008-07-23 | Aviza Tech Inc | GAS DISTRIBUTION SYSTEM |
DE102004009130A1 (de) | 2004-02-25 | 2005-09-15 | Aixtron Ag | Einlasssystem für einen MOCVD-Reaktor |
US7682940B2 (en) | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
DE102004058521A1 (de) | 2004-12-04 | 2006-06-14 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden von dicken Gallium-Nitrit-Schichten auf einem Saphirsubstrat und zugehörigen Substrathalter |
KR100578089B1 (ko) | 2004-12-22 | 2006-05-10 | 주식회사 시스넥스 | 수소화물기상증착 반응기 |
CN101845670A (zh) | 2005-03-10 | 2010-09-29 | 加利福尼亚大学董事会 | 用于生长平坦半极性氮化镓的技术 |
US7195934B2 (en) | 2005-07-11 | 2007-03-27 | Applied Materials, Inc. | Method and system for deposition tuning in an epitaxial film growth apparatus |
JP4803578B2 (ja) | 2005-12-08 | 2011-10-26 | 東京エレクトロン株式会社 | 成膜方法 |
JP2008066490A (ja) | 2006-09-06 | 2008-03-21 | Nippon Emc Ltd | 気相成長装置 |
US20090095222A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas spiral channel showerhead |
US20090095221A1 (en) | 2007-10-16 | 2009-04-16 | Alexander Tam | Multi-gas concentric injection showerhead |
US7976631B2 (en) | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US20090194024A1 (en) | 2008-01-31 | 2009-08-06 | Applied Materials, Inc. | Cvd apparatus |
-
2010
- 2010-03-24 US US12/730,975 patent/US8110889B2/en not_active Expired - Fee Related
- 2010-03-24 US US12/731,030 patent/US20100273291A1/en not_active Abandoned
- 2010-04-22 JP JP2012508543A patent/JP2012525708A/ja not_active Withdrawn
- 2010-04-22 KR KR1020117028426A patent/KR20120009504A/ko not_active Application Discontinuation
- 2010-04-22 CN CN2010800195160A patent/CN102414845A/zh active Pending
- 2010-04-22 WO PCT/US2010/032032 patent/WO2010129183A2/en active Application Filing
- 2010-04-27 TW TW099113338A patent/TW201101531A/zh unknown
-
2012
- 2012-01-13 US US13/350,446 patent/US20120111272A1/en not_active Abandoned
Patent Citations (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4592306A (en) * | 1983-12-05 | 1986-06-03 | Pilkington Brothers P.L.C. | Apparatus for the deposition of multi-layer coatings |
US4851295A (en) * | 1984-03-16 | 1989-07-25 | Genus, Inc. | Low resistivity tungsten silicon composite film |
US4763602A (en) * | 1987-02-25 | 1988-08-16 | Glasstech Solar, Inc. | Thin film deposition apparatus including a vacuum transport mechanism |
US5348911A (en) * | 1987-06-30 | 1994-09-20 | Aixtron Gmbh | Material-saving process for fabricating mixed crystals |
USD329839S (en) * | 1990-01-31 | 1992-09-29 | Hohner Automation Societe Anonyme | Incremental coder |
US5686738A (en) * | 1991-03-18 | 1997-11-11 | Trustees Of Boston University | Highly insulating monocrystalline gallium nitride thin films |
US5762755A (en) * | 1991-05-21 | 1998-06-09 | Genus, Inc. | Organic preclean for improving vapor phase wafer etch uniformity |
US5273588A (en) * | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
US5647911A (en) * | 1993-12-14 | 1997-07-15 | Sony Corporation | Gas diffuser plate assembly and RF electrode |
US6156581A (en) * | 1994-01-27 | 2000-12-05 | Advanced Technology Materials, Inc. | GaN-based devices using (Ga, AL, In)N base layers |
US5858471A (en) * | 1994-04-08 | 1999-01-12 | Genus, Inc. | Selective plasma deposition |
US5871586A (en) * | 1994-06-14 | 1999-02-16 | T. Swan & Co. Limited | Chemical vapor deposition |
US5715361A (en) * | 1995-04-13 | 1998-02-03 | Cvc Products, Inc. | Rapid thermal processing high-performance multizone illuminator for wafer backside heating |
US5814239A (en) * | 1995-07-29 | 1998-09-29 | Hewlett-Packard Company | Gas-phase etching and regrowth method for Group III-nitride crystals |
US5756400A (en) * | 1995-12-08 | 1998-05-26 | Applied Materials, Inc. | Method and apparatus for cleaning by-products from plasma chamber surfaces |
US5667592A (en) * | 1996-04-16 | 1997-09-16 | Gasonics International | Process chamber sleeve with ring seals for isolating individual process modules in a common cluster |
US5963834A (en) * | 1996-12-20 | 1999-10-05 | Tokyo Electron Limited | Method for forming a CVD film |
US5983906A (en) * | 1997-01-24 | 1999-11-16 | Applied Materials, Inc. | Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment |
US5855675A (en) * | 1997-03-03 | 1999-01-05 | Genus, Inc. | Multipurpose processing chamber for chemical vapor deposition processes |
US6270569B1 (en) * | 1997-06-11 | 2001-08-07 | Hitachi Cable Ltd. | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method |
US6176936B1 (en) * | 1997-07-22 | 2001-01-23 | Nec Corporation | In-situ chamber cleaning method of CVD apparatus |
US6086673A (en) * | 1998-04-02 | 2000-07-11 | Massachusetts Institute Of Technology | Process for producing high-quality III-V nitride substrates |
US20010006845A1 (en) * | 1998-06-18 | 2001-07-05 | Olga Kryliouk | Method and apparatus for producing group-III nitrides |
US6274495B1 (en) * | 1998-09-03 | 2001-08-14 | Cvc Products, Inc. | Method for fabricating a device on a substrate |
US6309465B1 (en) * | 1999-02-18 | 2001-10-30 | Aixtron Ag. | CVD reactor |
US6200893B1 (en) * | 1999-03-11 | 2001-03-13 | Genus, Inc | Radical-assisted sequential CVD |
US6305314B1 (en) * | 1999-03-11 | 2001-10-23 | Genvs, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
US6206972B1 (en) * | 1999-07-08 | 2001-03-27 | Genus, Inc. | Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes |
US6692568B2 (en) * | 2000-11-30 | 2004-02-17 | Kyma Technologies, Inc. | Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon |
US6551848B2 (en) * | 2001-05-26 | 2003-04-22 | Samsung Electro-Mechanics Co., Ltd. | Method for fabricating semiconductor light emitting device |
US7611915B2 (en) * | 2001-07-23 | 2009-11-03 | Cree, Inc. | Methods of manufacturing light emitting diodes including barrier layers/sublayers |
US6903025B2 (en) * | 2001-08-30 | 2005-06-07 | Kabushiki Kaisha Toshiba | Method of purging semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
US20060174815A1 (en) * | 2002-05-17 | 2006-08-10 | Butcher Kenneth S A | Process for manufacturing a gallium rich gallium nitride film |
US20080282978A1 (en) * | 2002-05-17 | 2008-11-20 | Kenneth Scott Alexander Butcher | Process For Manufacturing A Gallium Rich Gallium Nitride Film |
US20040000321A1 (en) * | 2002-07-01 | 2004-01-01 | Applied Materials, Inc. | Chamber clean method using remote and in situ plasma cleaning systems |
US20040129671A1 (en) * | 2002-07-18 | 2004-07-08 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
US20050032345A1 (en) * | 2003-08-05 | 2005-02-10 | University Of Florida | Group III-nitride growth on Si substrate using oxynitride interlayer |
US20060018639A1 (en) * | 2003-10-27 | 2006-01-26 | Sundar Ramamurthy | Processing multilayer semiconductors with multiple heat sources |
US20050101155A1 (en) * | 2003-11-12 | 2005-05-12 | Applied Materials, Inc., A Delaware Corporation | Ramp temperature techniques for improved mean wafer before clean |
US20060051966A1 (en) * | 2004-02-26 | 2006-03-09 | Applied Materials, Inc. | In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber |
US20060040475A1 (en) * | 2004-08-18 | 2006-02-23 | Emerson David T | Multi-chamber MOCVD growth apparatus for high performance/high throughput |
US20080272463A1 (en) * | 2004-09-27 | 2008-11-06 | Kenneth Scott Alexander Butcher | Method and Apparatus for Growing a Group (III) Metal Nitride Film and a Group (III) Metal Nitride Film |
US20090095713A1 (en) * | 2004-10-26 | 2009-04-16 | Advanced Technology Materials, Inc. | Novel methods for cleaning ion implanter components |
US7338828B2 (en) * | 2005-05-31 | 2008-03-04 | The Regents Of The University Of California | Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) |
US20070108466A1 (en) * | 2005-08-31 | 2007-05-17 | University Of Florida Research Foundation, Inc. | Group III-nitrides on Si substrates using a nanostructured interlayer |
US20070144557A1 (en) * | 2005-12-27 | 2007-06-28 | Lee Ki-Hoon | Cleaning method of apparatus for depositing AI-containing metal film and AI-containing metal nitride film |
US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
US20070243702A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials | Dual-side epitaxy processes for production of nitride semiconductor structures |
US20070254458A1 (en) * | 2006-04-27 | 2007-11-01 | Applied Materials, Inc. | Buffer-layer treatment of MOCVD-grown nitride structures |
US20070259502A1 (en) * | 2006-05-05 | 2007-11-08 | Applied Materials, Inc. | Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE |
US20080050889A1 (en) * | 2006-08-24 | 2008-02-28 | Applied Materials, Inc. | Hotwall reactor and method for reducing particle formation in GaN MOCVD |
US20080314311A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Hvpe showerhead design |
US20080314317A1 (en) * | 2007-06-24 | 2008-12-25 | Burrows Brian H | Showerhead design with precursor pre-mixing |
US20090136652A1 (en) * | 2007-06-24 | 2009-05-28 | Applied Materials, Inc. | Showerhead design with precursor source |
US20090020768A1 (en) * | 2007-07-20 | 2009-01-22 | Gallium Enterprise Pty Ltd., An Australian Company | Buried contact devices for nitride-based films and manufacture thereof |
US20090029528A1 (en) * | 2007-07-26 | 2009-01-29 | Applied Materials, Inc. | Method and apparatus for cleaning a substrate surface |
US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
US7838315B2 (en) * | 2007-11-23 | 2010-11-23 | Samsung Led Co., Ltd. | Method of manufacturing vertical light emitting diode |
US20090194026A1 (en) * | 2008-01-31 | 2009-08-06 | Burrows Brian H | Processing system for fabricating compound nitride semiconductor devices |
US20100210067A1 (en) * | 2009-02-11 | 2010-08-19 | Kenneth Scott Alexander Butcher | Migration and plasma enhanced chemical vapor deposition |
Cited By (132)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090098276A1 (en) * | 2007-10-16 | 2009-04-16 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US9644267B2 (en) | 2007-10-16 | 2017-05-09 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US8481118B2 (en) | 2007-10-16 | 2013-07-09 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
US20090107403A1 (en) * | 2007-10-31 | 2009-04-30 | Moshtagh Vahid S | Brazed cvd shower head |
US8668775B2 (en) * | 2007-10-31 | 2014-03-11 | Toshiba Techno Center Inc. | Machine CVD shower head |
US20090178615A1 (en) * | 2008-01-15 | 2009-07-16 | Samsung Electro-Mechanics Co., Ltd. | Showerhead and chemical vapor deposition apparatus having the same |
US8183132B2 (en) * | 2009-04-10 | 2012-05-22 | Applied Materials, Inc. | Methods for fabricating group III nitride structures with a cluster tool |
US20100261340A1 (en) * | 2009-04-10 | 2010-10-14 | Applied Materials, Inc. | Cluster tool for leds |
US9932670B2 (en) | 2009-08-27 | 2018-04-03 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
US20110117728A1 (en) * | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
US8623148B2 (en) | 2009-09-10 | 2014-01-07 | Matheson Tri-Gas, Inc. | NF3 chamber clean additive |
US20110073136A1 (en) * | 2009-09-10 | 2011-03-31 | Matheson Tri-Gas, Inc. | Removal of gallium and gallium containing materials |
US20110056515A1 (en) * | 2009-09-10 | 2011-03-10 | Matheson Tri-Gas, Inc. | Nf3 chamber clean additive |
US20110059617A1 (en) * | 2009-09-10 | 2011-03-10 | Matheson Tri-Gas, Inc. | High aspect ratio silicon oxide etch |
US8361892B2 (en) * | 2010-04-14 | 2013-01-29 | Applied Materials, Inc. | Multiple precursor showerhead with by-pass ports |
US20110256645A1 (en) * | 2010-04-14 | 2011-10-20 | Applied Materials, Inc. | Multiple precursor showerhead with by-pass ports |
US20120000490A1 (en) * | 2010-07-01 | 2012-01-05 | Applied Materials, Inc. | Methods for enhanced processing chamber cleaning |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US20130005118A1 (en) * | 2011-07-01 | 2013-01-03 | Sung Won Jun | Formation of iii-v materials using mocvd with chlorine cleans operations |
US9644285B2 (en) | 2011-08-22 | 2017-05-09 | Soitec | Direct liquid injection for halide vapor phase epitaxy systems and methods |
TWI470672B (zh) * | 2011-08-22 | 2015-01-21 | Soitec Silicon On Insulator | 用於鹵化物氣相磊晶系統之直接液體注入及方法 |
US9044793B2 (en) * | 2011-11-22 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for cleaning film formation apparatus and method for manufacturing semiconductor device |
US20130130476A1 (en) * | 2011-11-22 | 2013-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for cleaning film formation apparatus and method for manufacturing semiconductor device |
US20130145989A1 (en) * | 2011-12-12 | 2013-06-13 | Intermolecular, Inc. | Substrate processing tool showerhead |
DE102011056538A1 (de) | 2011-12-16 | 2013-06-20 | Aixtron Se | Verfahren zum Entfernen unerwünschter Rückstände aus einem MOCVD-Reaktor sowie zugehörige Vorrichtung |
US10943788B2 (en) | 2012-02-29 | 2021-03-09 | Applied Materials, Inc. | Abatement and strip process chamber in a load lock configuration |
US10287683B2 (en) * | 2012-06-25 | 2019-05-14 | Lam Research Corporation | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
CN107435140A (zh) * | 2012-06-25 | 2017-12-05 | 诺发系统公司 | 抑制前体流和衬底区外等离子体以抑制衬底处理系统寄生沉积 |
US11725282B2 (en) | 2012-06-25 | 2023-08-15 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US11111581B2 (en) | 2012-06-25 | 2021-09-07 | Lam Research Corporation | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US10354843B2 (en) | 2012-09-21 | 2019-07-16 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US11264213B2 (en) | 2012-09-21 | 2022-03-01 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9925569B2 (en) | 2012-09-25 | 2018-03-27 | Applied Materials, Inc. | Chamber cleaning with infrared absorption gas |
US20140127887A1 (en) * | 2012-11-06 | 2014-05-08 | Intermolecular, Inc. | Chemical Vapor Deposition System |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
CN105143504A (zh) * | 2013-04-23 | 2015-12-09 | 艾克斯特朗欧洲公司 | 包括后续的多级净化步骤的mocvd层生长方法 |
TWI641718B (zh) * | 2013-04-23 | 2018-11-21 | 愛思強歐洲公司 | MOCVD layer growth method including subsequent multi-stage purification steps |
US9670580B2 (en) | 2013-04-23 | 2017-06-06 | Aixtron Se | MOCVD layer growth method with subsequent multi-stage cleaning step |
WO2014173806A1 (de) * | 2013-04-23 | 2014-10-30 | Aixtron Se | Mocvd-schichtwachstumsverfahren mit nachfolgendem mehrstufigen reinigungschritt |
US9528183B2 (en) | 2013-05-01 | 2016-12-27 | Applied Materials, Inc. | Cobalt removal for chamber clean or pre-clean process |
US10465294B2 (en) | 2014-05-28 | 2019-11-05 | Applied Materials, Inc. | Oxide and metal removal |
CN104112662A (zh) * | 2014-07-25 | 2014-10-22 | 中国科学院半导体研究所 | 气相外延在线清洗装置及方法 |
US10490418B2 (en) | 2014-10-14 | 2019-11-26 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10796922B2 (en) | 2014-10-14 | 2020-10-06 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US20160362782A1 (en) * | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas dispenser and deposition apparatus using the same |
US10468276B2 (en) | 2015-08-06 | 2019-11-05 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10607867B2 (en) | 2015-08-06 | 2020-03-31 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US11158527B2 (en) | 2015-08-06 | 2021-10-26 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US10424463B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US11476093B2 (en) | 2015-08-27 | 2022-10-18 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US11735441B2 (en) | 2016-05-19 | 2023-08-22 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US12057329B2 (en) | 2016-06-29 | 2024-08-06 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US11649559B2 (en) * | 2016-09-14 | 2023-05-16 | Applied Materials, Inc. | Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate |
US20190169767A1 (en) * | 2016-09-14 | 2019-06-06 | Applied Materials, Inc. | Degassing chamber for arsenic related processes |
US10541113B2 (en) | 2016-10-04 | 2020-01-21 | Applied Materials, Inc. | Chamber with flow-through source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US11049698B2 (en) | 2016-10-04 | 2021-06-29 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10319603B2 (en) | 2016-10-07 | 2019-06-11 | Applied Materials, Inc. | Selective SiN lateral recess |
US10770346B2 (en) | 2016-11-11 | 2020-09-08 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10600639B2 (en) | 2016-11-14 | 2020-03-24 | Applied Materials, Inc. | SiN spacer profile patterning |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10903052B2 (en) | 2017-02-03 | 2021-01-26 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10529737B2 (en) | 2017-02-08 | 2020-01-07 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10325923B2 (en) | 2017-02-08 | 2019-06-18 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11915950B2 (en) | 2017-05-17 | 2024-02-27 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11361939B2 (en) | 2017-05-17 | 2022-06-14 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
TWI759515B (zh) * | 2017-07-28 | 2022-04-01 | 美商克萊譚克公司 | 具有強制流通自然對流之雷射維持等離子光源 |
US10593553B2 (en) | 2017-08-04 | 2020-03-17 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US11101136B2 (en) | 2017-08-07 | 2021-08-24 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10424487B2 (en) | 2017-10-24 | 2019-09-24 | Applied Materials, Inc. | Atomic layer etching processes |
US10410845B2 (en) * | 2017-11-22 | 2019-09-10 | Applied Materials, Inc. | Using bias RF pulsing to effectively clean electrostatic chuck (ESC) |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10861676B2 (en) | 2018-01-08 | 2020-12-08 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10699921B2 (en) | 2018-02-15 | 2020-06-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US11004689B2 (en) | 2018-03-12 | 2021-05-11 | Applied Materials, Inc. | Thermal silicon etch |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
CN112309815A (zh) * | 2019-07-26 | 2021-02-02 | 山东浪潮华光光电子股份有限公司 | 生产led外延片的mocvd系统维护保养后的恢复方法 |
CN112538628A (zh) * | 2019-09-20 | 2021-03-23 | 力晶积成电子制造股份有限公司 | 铝层的蚀刻后保护方法 |
US12087573B2 (en) | 2020-07-09 | 2024-09-10 | Lam Research Corporation | Modulation of oxidation profile for substrate processing |
US20220349051A1 (en) * | 2021-04-29 | 2022-11-03 | Asm Ip Holding B.V. | Reactor systems and methods for cleaning reactor systems |
WO2024097507A1 (en) * | 2022-11-01 | 2024-05-10 | Lam Research Corporation | Reducing particle buildup in processing chambers |
WO2024141309A1 (de) | 2022-12-28 | 2024-07-04 | Aixtron Se | Verfahren zum abscheiden von gallium nitrid gan auf silizium si |
Also Published As
Publication number | Publication date |
---|---|
TW201101531A (en) | 2011-01-01 |
US20100273290A1 (en) | 2010-10-28 |
WO2010129183A2 (en) | 2010-11-11 |
KR20120009504A (ko) | 2012-01-31 |
US8110889B2 (en) | 2012-02-07 |
US20120111272A1 (en) | 2012-05-10 |
CN102414845A (zh) | 2012-04-11 |
WO2010129183A3 (en) | 2011-01-20 |
WO2010129183A4 (en) | 2011-03-17 |
JP2012525708A (ja) | 2012-10-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20100273291A1 (en) | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning | |
US8080466B2 (en) | Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system | |
US8183132B2 (en) | Methods for fabricating group III nitride structures with a cluster tool | |
US8642368B2 (en) | Enhancement of LED light extraction with in-situ surface roughening | |
TWI496935B (zh) | Mocvd腔室在原位清潔後利用nh3淨化之去汙染 | |
US20110081771A1 (en) | Multichamber split processes for led manufacturing | |
US20110244617A1 (en) | Forming a compound-nitride structure that includes a nucleation layer | |
US8361892B2 (en) | Multiple precursor showerhead with by-pass ports | |
US8138069B2 (en) | Substrate pretreatment for subsequent high temperature group III depositions | |
US20100279020A1 (en) | METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE | |
US20080050889A1 (en) | Hotwall reactor and method for reducing particle formation in GaN MOCVD | |
US8853086B2 (en) | Methods for pretreatment of group III-nitride depositions | |
US20130005118A1 (en) | Formation of iii-v materials using mocvd with chlorine cleans operations | |
US20110207256A1 (en) | In-situ acceptor activation with nitrogen and/or oxygen plasma treatment | |
WO2010129289A2 (en) | Decontamination of mocvd chamber using nh3 purge after in-situ cleaning | |
US20110171758A1 (en) | Reclamation of scrap materials for led manufacturing | |
US20120015502A1 (en) | p-GaN Fabrication Process Utilizing a Dedicated Chamber and Method of Minimizing Magnesium Redistribution for Sharper Decay Profile |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KRYLIOUK, OLGA;SU, JIE;GRIFFIN, KEVIN;AND OTHERS;SIGNING DATES FROM 20100407 TO 20100416;REEL/FRAME:024375/0069 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |