US20100260947A1 - Method and apparatus of plasma treatment - Google Patents

Method and apparatus of plasma treatment Download PDF

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US20100260947A1
US20100260947A1 US12/783,683 US78368310A US2010260947A1 US 20100260947 A1 US20100260947 A1 US 20100260947A1 US 78368310 A US78368310 A US 78368310A US 2010260947 A1 US2010260947 A1 US 2010260947A1
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vacuum chamber
substrate
gas
treatment
plasma
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US12/783,683
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Takashi Minami
Shigenori Ishihara
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Canon Anelva Corp
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Canon Anelva Corp
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Publication of US20100260947A1 publication Critical patent/US20100260947A1/en
Priority to US13/017,875 priority Critical patent/US8298627B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form

Definitions

  • the present invention relates to a method and an apparatus of plasma processing to form an oxide film, a nitride film or the like on a surface of a semiconductor substrate.
  • substrate treatment apparatuses in which a process gas is activated by plasma discharge to give a treatment to a substrate.
  • a high-frequency voltage is applied between plural discharge electrodes to generate plasma, which excites and activates the applied gas to perform such substrate treatment as forming a thin film on a substrate surface or performing etching.
  • a contaminant exists in a chamber, it causes the contamination of the substrate after the treatment, or, when a residual gas exists, an intended effect of the treatment can not be sufficiently obtained. Therefore, for the purpose of adjusting an atmosphere in the chamber prior to the substrate treatment, it is generally performed to introduce a gas that is used in the treatment into the chamber and to generate plasma for conditioning the inside of a vacuum chamber.
  • the conditioning exerts such effect as stabilizing the atmosphere in the chamber, and stabilizing the substrate treatment performance.
  • the conditioning is particularly effective when it is followed by a lot start or a change of the process gas.
  • the cleaning means removing impurities generated during the treatment process and making the inside atmosphere and the inner wall of the chamber in a clean state.
  • the conditioning means introducing gas to be used for the process treatment of a semiconductor substrate into the chamber before giving the process treatment, and adjusting the atmosphere in the chamber by making active species, generated by discharging the gas, adhere to the chamber inner wall for the purpose of stabilizing the treatment rate and the film properties throughout a continuous treatment.
  • the state of the chamber inner wall becomes vulnerable to the progress of the treatment and the treatment rate in the continuous processing becomes unstable. Further, if impurities adhere to the chamber inner wall, impurities can be contained in the film to deteriorate film properties.
  • the conditioning is performed in order to improve these adverse effects. As a result, the treatment rate of the continuous treatment becomes stable, and good film properties are obtained.
  • Patent Document 1 discloses an example of such plasma treatment apparatus.
  • FIG. 3 shows the plasma treatment apparatus in Patent Document 1.
  • the method in Patent Document 1 performs effective plasma conditioning by adjusting an electrode interval upon the conditioning, even when the electrode interval is narrowed to enhance the etching rate.
  • an electrode elevating mechanism 108 makes the position of an upper electrode 103 variable, and widens the interval between a lower electrode 102 and the upper electrode 103 upon the conditioning as compared with that upon the etching to allow the plasma to spread widely. And, it is designed so as to remove reaction products and the like adhered to a vacuum chamber 101 , the lower electrode 102 , the upper electrode 103 and the like.
  • Patent Document 1 adopts such construction as generating plasma using electrodes of a parallel flat plate. Consequently, even when the interval between the upper and lower electrodes is widened upon the conditioning to allow the plasma to spread widely, the conditioning is not sufficiently performed in other places, although the conditioning effect is large between electrodes.
  • FIG. 4 shows the treatment apparatus in Patent Document 2.
  • the method in Patent Document 2 performs rapidly and uniformly the plasma conditioning of the inside of a vacuum vessel of an ECR type microwave plasma treatment apparatus.
  • high density radicals are generated in a vacuum chamber (a plasma generation chamber 203 , a delivery chamber 211 ). And the position of a stage 208 is set so that the effective conditioning area can expand to the distance, at which the density of the radicals is reduced to half. Then a plasma cleaning using the radicals is carried out. Specifically, the conditioning is performed while setting the gas pressure to be 50 mTorr or more, and moving the stage 208 for placing an object to be treated within 130 mm from the ECR area.
  • the Document describes that the conditioning can be performed rapidly and uniformly within the limited area.
  • Patent Document 2 describes that the conditioning is performed in a state where the stage lies within 130 mm from the ECR area, however, in the case of this condition, most of the area to be conditioned is the reaction chamber, and the conditioning may not be effective for a lower portion of the vacuum chamber (the conditioning efficiency deteriorates significantly).
  • Patent Document 1 Japanese Patent Laid-Open No. 05-343372
  • Patent Document 2 Japanese Patent Laid-Open No. 06-097130
  • a purpose of the present invention is to provide a method and apparatus of plasma treatment capable of performing sufficient conditioning for the whole interior part of the vacuum chamber, in order to solve the above problem.
  • a first aspect of the present invention may be a method of a plasma treatment using a plasma treatment apparatus, the apparatus comprising: a vacuum chamber having a transfer area for transferring a substrate to or from the inside and a reaction area for providing a process treatment for the substrate, and being used in a state of a reduced pressure; a substrate holder for holding the substrate; means for generating plasma in the reaction area; and a moving means for moving the substrate holder between the transfer area and the reaction area, the method comprising the steps of: moving the substrate holder to the transfer area by the moving means prior to providing the process treatment for the substrate in a state such that the substrate is not held on the substrate holder; introducing a same gas as the gas for performing a process treatment for the substrate into the vacuum chamber; generating plasma in the vacuum chamber by the means for generating plasma and making active species in the plasma adhere to the vacuum chamber inner wall to adjust the atmosphere in the vacuum chamber; and making the substrate holder hold the substrate and moving the substrate holder to the reaction area by the moving means to provide the process treatment for the
  • a second aspect of the present invention may be a plasma treatment apparatus comprising: a vacuum chamber having a transfer area for transferring a substrate to or from the inside and a reaction area for providing a process treatment for the substrate; a gas introduction means for introducing a prescribed gas into the vacuum chamber; a substrate holder for holding the substrate; means for generating plasma in the reaction area; and a moving means for moving the substrate holder between the transfer area and the reaction area, wherein: when a conditioning for adjusting an atmosphere in the vacuum chamber is necessary, a conditioning for adjusting an atmosphere in the vacuum chamber is practiced by: before providing the process treatment for the substrate, moving the substrate holder to the transfer area by the moving means; and after that introducing a same gas as the gas to be used in the process treatment into the vacuum chamber by the gas introduction means; generating plasma in the vacuum chamber by the means for generating plasma; and making active species in the plasma adhere to the vacuum chamber inner wall.
  • a third aspect of the present invention may be a control device of controlling a plasma treatment apparatus, the apparatus comprising: a vacuum chamber having a transfer area for transferring a substrate to or from the inside and a reaction area for providing a process treatment for the substrate; a gas introduction means for introducing a prescribed gas into the vacuum chamber; a substrate holder for holding the substrate; means for generating plasma in the reaction area; and a moving means for moving the substrate holder between the transfer area and the reaction area, and the control device comprising: means for determining whether or not a conditioning for the vacuum chamber is necessary before performing the process treatment for the substrate; means for controlling the moving means so that the substrate holder lies in the transfer area when the conditioning is determined to be necessary; means for controlling the gas introduction means so that a same gas as the gas to be used in the process treatment is introduced into the vacuum chamber before providing the process treatment for the substrate when the substrate holder lies in the transfer area; and means for controlling the means for generating plasma so that the plasma is generated in the vacuum chamber into which the gas has been introduced.
  • the present invention it becomes possible to expand the conditioning effect to the whole internal area of the vacuum chamber and to stabilize the interior atmosphere of the vacuum chamber before the plasma treatment process by moving the substrate holder into the transfer chamber and enlarging an exhaust conductance with the reaction chamber. Accordingly, it is possible to stabilize the treatment rate and film properties of the plasma treatment for the substrate.
  • FIG. 1 is a schematic view showing an embodiment of a plasma treatment apparatus according to the present invention.
  • FIG. 2 is a drawing showing the comparison of the present invention with a conventional technique for the relation between the number of treated substrates and the change in the film thickness.
  • FIG. 3 is a schematic view showing a plasma treatment apparatus of a conventional example.
  • FIG. 4 is a schematic view showing a plasma treatment apparatus of another conventional example.
  • FIG. 5 is a flow chart showing a procedure of performing the conditioning in the present invention.
  • FIG. 6 is a drawing showing the comparison of a conventional technique and the present invention for the effect of the conditioning when plasma nitridation is performed after plasma oxidation has been performed.
  • FIG. 7 is a block diagram showing a rough constitution of a control system in a plasma treatment apparatus according to the present invention.
  • FIG. 1 is a schematic view showing a constitution of an embodiment of a plasma treatment apparatus according to the present invention.
  • the reference numeral “ 1 ” denotes a vacuum chamber for use in a state of reduced pressure.
  • the vacuum chamber 1 is connected to a vacuum pump (not shown) and the inside of the vacuum chamber 1 is kept at an intended vacuum pressure.
  • a quartz part 3 is disposed in the upper portion of the vacuum chamber 1 .
  • a quartz part 3 has a function of a transparent window for introducing external energy into the vacuum chamber 1 from an external energy supply means 5 .
  • External energy such as microwave is introduced into the vacuum chamber 1 , to which the process gas is supplied, through the quartz part 3 from the external energy supply means 5 to generate a plasma 10 .
  • the vacuum chamber 1 includes two chambers, a reaction chamber 8 in the upper portion thereof and a transfer chamber 9 in the lower portion thereof. Upon the plasma treatment for the substrate processing, plasma 10 is generated in the reaction chamber 8 .
  • the transfer chamber 9 is a chamber for carrying a semiconductor substrate to or from the inside of the vacuum chamber. In the vacuum chamber 1 , a substrate holder 2 for holding a semiconductor substrate is provided.
  • the substrate holder 2 holds a semiconductor substrate, and moves up and down between the reaction chamber 8 and the transfer chamber 9 by a moving means (not shown).
  • the moving means has, for example, a driving source such as a motor disposed outside of the vacuum chamber 1 , an elevating mechanism to move the substrate holder 2 in the vertical direction utilizing driving power of the driving source, or the like.
  • a semiconductor substrate is delivered one by one through an opening (not shown) into the transfer chamber 9 , and the substrate is held on the substrate holder 2 .
  • the semiconductor substrate is transferred one by one into the transfer chamber 9 through an opening (not shown) and is held on the substrate holder 2 . Then, according to need, the semiconductor substrate is transported to a prescribed position (a treatment position) of the reaction chamber 8 being held on the substrate holder 2 .
  • the treatment position can be determined according to the requirement of treatment properties.
  • external energy such as microwave is introduced into the vacuum chamber 1 , to which a process gas is supplied, from the external energy supply means 5 through the part of the quartz part 3 to generate plasma 10 in the reaction chamber 8 .
  • the generated plasma 10 is used for performing a process treatment such as film forming for the semiconductor substrate held on the substrate holder 2 .
  • the structure of the vacuum chamber is configured so that the exhaust conductance of the reaction chamber 8 is larger with the substrate holder 2 positioned in the transfer chamber 9 than in the reaction chamber 8 .
  • the vacuum chamber 1 is provided with a gas introduction port 4 , and a mixture of two or more different process gases can be introduced into the vacuum chamber 1 from the gas introduction port 4 .
  • the vacuum chamber 1 is provided with two or more exhaust systems that include plural exhaust ports.
  • an exhaust port (larger) 6 having a larger exhaust volume and an exhaust port (smaller) 7 having a smaller exhaust volume are provided. That is, one system is set to have a smaller exhaust conductance, and another system is set to have a larger exhaust conductance.
  • exhaust conductance means one described below. That is, generally, in a molecular flow region, a mass flow rate Q of a gas flow through a route is proportional to the difference in pressures (P1 ⁇ P2), wherein P1 is a pressure at the inlet and P2 is that at the outlet.
  • the exhaust conductance on the large flow volume side is desirably set to a magnitude of ten times or more than that on the small flow volume side.
  • evacuation is performed using the exhaust port (larger) 6 having a large exhaust conductance to make diffusing species (active species) can spread in the vacuum chamber 1 .
  • FIG. 7 is a block diagram showing a rough constitution of a control system in a plasma treatment apparatus of the embodiment.
  • reference numeral 1000 is a control section as a control means for controlling the whole plasma treatment apparatus.
  • the control section 1000 has a CPU 1001 executing a processing action such as various calculations, control or discrimination, and a ROM 1002 storing a control program of processing or the like described later in FIG. 5 , which is executed by the CPU 1001 .
  • the control section 1000 has a RAM 1003 for temporarily storing data of the CPU 1001 on processing operation or input data, a nonvolatile memory 1004 such as a flash memory or SRAM, and the like.
  • an input operation section 1005 including a keyboard for inputting a prescribed directions or data, or various switches
  • a display section 1006 for performing various display including an input or setting state of the plasma treatment apparatus
  • a timer system 1007 capable of measuring elapsed time
  • a gas introduction mechanism 1013 an external energy supply means 5 , a substrate holder-moving motor 1014 , a first exhaust mechanism 1015 and a second exhaust mechanism 1016 are connected via drive circuits 1008 , 1009 , 1010 , 1011 and 1012 , respectively.
  • the gas introduction mechanism 1013 is connected to the gas introduction port 4 , and introduces a prescribed process gas into the vacuum chamber 1 via the gas introduction port 4 according to the directions from the CPU 1001 .
  • the first exhaust mechanism 1015 and the second exhaust mechanism 1016 are connected to the exhaust port 6 and the exhaust port 7 respectively, and discharges said process gas in the vacuum chamber 1 according to the directions from the CPU 1001 .
  • the external energy supply means 5 supplies external energy such as microwave to the vacuum chamber 1 according to the directions from the CPU 1001 .
  • the substrate holder 2 can be moved up and down by the moving means.
  • the substrate holder 2 is connected to an elevating mechanism owned by the moving means, and, by the drive of the substrate holder-moving motor 1014 , the elevating mechanism is actuated to move the substrate holder 2 up and down. That is, the substrate holder-moving motor is driven according to the directions from the CPU 1001 , and, by the drive, the substrate holder 2 is moved.
  • the conditioning a process of oxidation or nitridation is selected, which is practiced before introducing the semiconductor substrate into the plasma treatment apparatus. Moreover, the conditioning is practiced when a definite period of time has elapsed from the last plasma treatment, or when a gas of a different kind or composition from the gas used in the last plasma treatment is to be used.
  • FIG. 5 is a flow chart showing a treatment procedure concerning the conditioning treatment of a plasma treatment apparatus of the embodiment. Hereinafter, respective steps concerning the conditioning will be explained with reference to the flow chart.
  • the control section 1000 acquires process treatment initiation information including gas specifying information (information showing what kind or composition of gas will be used) for specifying gas for use in a current process treatment as a command of the process treatment initiation.
  • gas specifying information information showing what kind or composition of gas will be used
  • the embodiment is a mode capable of practicing oxidation treatment and nitridation treatment as the process treatment. Accordingly, when the oxidation treatment is performed, the gas specifying information is “information showing that the gas to be used is oxygen,” and when nitridation treatment is performed, the gas specifying information is “information showing that the gas to be used is nitrogen.”
  • the control section 1000 acquires the process treatment initiation information according to the user input.
  • the process treatment initiation information includes “information showing that the gas to be used is oxygen” as the gas specifying information.
  • the process treatment initiation information includes “information showing that the gas to be used is nitrogen” as the gas specifying information.
  • the control section 1000 determines whether or not a prescribed time (for example, T seconds) has elapsed from the last process treatment. That is, the control section 1000 refers to a timer system 1007 , calculates the elapsed time from the termination of the last process treatment until now, and determines whether or not the elapsed time is over T seconds.
  • a prescribed time for example, T seconds
  • the control section 1000 reads out information concerning the time at the termination from the timer system 1007 , to make the nonvolatile memory 1004 memorize it. And, when acquiring process treatment initiation information at Step 501 , at this step, the control section 1000 reads out information concerning the current time from the timer system 1007 , and, on the basis of the information concerning the read out current time and the information concerning the time at the termination of the last process treatment stored in the nonvolatile memory 1004 , calculates the difference between the current time and the time at the termination of the last process treatment. The difference is the elapsed time. Meanwhile, the time at the termination may be clock time, or elapsed time (differential time) from a reference point.
  • a timer system 1007 having a stopwatch function capable of measuring the elapsed time from starting time to stopping time is used, and the control section 1000 starts the stopwatch function of the timer system 1007 at the same time when the last process treatment is terminated. Then, when the process treatment initiation information is acquired at Step 501 , at this step, the control section 1000 stops the stopwatch function of the timer system 1007 . The control section 1000 determines the time period measured from the starting time till the stopping time as the elapsed time.
  • either method may be used when the elapsed time from the last process treatment can be acquired.
  • Step 502 the control section 1000 progresses to Step 504 when it determines that T seconds have elapsed from the last process treatment, or to Step 503 when it determines that T seconds have not elapsed from the last process treatment.
  • the control section 1000 determines whether or not the kind or composition of the gas used in the last process treatment is different from the kind or composition of a gas to be used in the current process treatment.
  • the control section 1000 makes the nonvolatile memory 1004 store the specifying information of the gas used (information showing what kind or composition of gas was used) for specifying the gas used in the certain process treatment on the basis of the gas specifying information included in the process treatment initiation information. Accordingly, the control section 1000 holds information concerning the kind or composition of the gas used in the last process treatment (the specifying information of the gas used for the last process treatment) before the initiation of the current process treatment.
  • control section 1000 compares the specifying information of the gas used for the last process treatment stored in the nonvolatile memory 1004 with the gas specifying information included in the initiation information of the current process treatment, and determines whether or not the gas to be used in the current process treatment is different from the gas used in the last process treatment.
  • control section 1000 replaces the “specifying information of the gas used for the last process treatment” stored in the nonvolatile memory 1004 by the specifying information of the gas used for the current process treatment.
  • Step 503 the control section 1000 progresses to Step 504 when it determines that the gas to be used in the current process treatment is different from the gas used in the last process treatment, or, progresses to Step 505 when it determines that the gas to be used in the current process treatment is the same as the gas used in the last process treatment.
  • the control section 1000 performs the conditioning treatment that is characteristic of the present invention.
  • the control section 1000 moves the substrate holder 2 to the transfer chamber 9 in a state where a semiconductor substrate is not held on the substrate holder, by driving the substrate holder-moving motor 1014 (by the drive of a moving means not shown) by sending a control signal to the substrate holder-moving motor 1014 via the drive circuit 1010 .
  • the control section 1000 since the exhaust conductance of the reaction chamber 8 becomes large as described above to spread diffusing species (active species) by plasma up to the transfer chamber 9 side, it becomes possible to perform the conditioning for the whole inner wall of the vacuum chamber 1 .
  • the control section 1000 sends a control signal to each of the gas introduction mechanism 1013 and the external energy means 5 .
  • the gas introduction mechanism 1013 that received the control signal supplies a process gas into the vacuum chamber 1 from the gas introduction port 4 , and the external energy supply means 5 that received the control signal supplies microwave to the vacuum chamber 1 to generate plasma 10 .
  • the control section 1000 sends a control signal to the first exhaust mechanism 1015 , and the exhaust mechanism 1015 that received the control signal evacuates the inside of the vacuum chamber 1 using the exhaust port 6 down to a prescribed pressure.
  • the plasma treatment apparatus makes diffusing species generated by the plasma 10 adhere to the inner wall of the vacuum chamber 1 to adjust the atmosphere in the vacuum chamber 1 and to perform the conditioning for the whole inner wall of the vacuum chamber 1 . After the conditioning is sufficiently performed in the vacuum chamber 1 in this manner, the control section 1000 progresses to Step 505 .
  • the control section 1000 initiates the current process treatment. That is, when a semiconductor substrate is transferred in the vacuum chamber 1 , the control section 1000 sends a control signal to the substrate holder-moving motor 1014 via the drive circuit 1010 to drive the substrate holder-moving motor 1014 , thereby making the substrate holder 2 move into the reaction chamber 8 to perform the process treatment for the semiconductor substrate in the reaction chamber 8 .
  • Step 502 and Step 503 are performed as the step for determining the transition to the conditioning treatment (Step 504 ).
  • the control section 1000 determines whether or not the conditioning for the vacuum chamber 1 is necessary before performing the current process treatment for the semiconductor substrate, at Steps 502 and 503 , based on the elapsed time from the last process treatment and the comparison between the gas used in the last process treatment and the gas to be used in the current process treatment. Then, when the necessity of the conditioning is determined to be positive, the conditioning is performed at Step 504 , and then the current process treatment is initiated at Step 505 . On the other hand, when the necessity is determined to be negative, the current process treatment is directly initiated at Step 505 .
  • the determination of “YES” at steps 502 and 503 acts as a trigger to initiate the conditioning treatment at Step 504 , but direct directions of initiating the conditioning treatment by a user may be used as a trigger to initiate the conditioning treatment at Step 504 .
  • the control section 1000 displays a user interface for inputting directions that determines whether or not the conditioning treatment is necessary and the kind of a process treatment (such as a kind of gas to be used for the process treatment) on the display section 1006 , to allow the user to input prescribed directions.
  • the control section 1000 acquires the process treatment initiation information.
  • the process treatment initiation information includes information showing whether or not the conditioning treatment is necessary, in addition to the gas specifying information.
  • the control section 1000 determines whether or not the conditioning for the vacuum chamber 1 is necessary based on the information showing whether or not the conditioning treatment is necessary. Then, when the conditioning is determined to be necessary, the treatment moves to the conditioning at Step 504 , and, when the conditioning treatment is determined to be unnecessary, the current process treatment is initiated directly at Step 505 .
  • the conditioning was performed by a conditioning method of the present invention in which the position of the substrate holder was changed, or by a conditioning method (conventional method) in which the position of the substrate holder was not changed. And after that, a continuous oxidation treatment for 25 silicon wafers was performed to compare the change of the thickness of a silicon oxide film relative to the number of treated wafers. Meanwhile, before the continuous oxidation treatment, a continuous nitridation treatment was performed with the apparatus above, and the inside of the vacuum chamber 1 and the inner wall thereof was filled with a nitrogen atmosphere until just before the conditioning.
  • Nitridation treatment Nitrogen gas flow rate: 500 sccm Pressure in chamber: 100 Pa Temperature: room temperature Nitridation time: 3 minutes (25 wafers were treated) Position of substrate holder: in reaction chamber Conditioning Oxygen gas flow rate: 500 sccm Pressure in chamber: 50 Pa Temperature: room temperature Conditioning time: 3 minutes Position of substrate holder: in transfer chamber Oxidation treatment Oxygen gas flow rate: 500 sccm Pressure in chamber: 100 Pa Temperature: room temperature Oxidation time: 2 minutes Position of substrate holder: in reaction chamber
  • FIG. 2 shows results thereof.
  • the method of the present invention makes it possible to perform a stable process treatment throughout the 25 wafers. Since external energy is directed only for generating plasma independently of the stage position, the external energy is not limited to microwave.
  • the effect of the conditioning according to the present invention was verified by performing a plasma nitridation processing after a plasma oxidation processing.
  • the condition of plasma exposure upon the plasma oxidation and the plasma nitridation was set to be the same as in the first Example, the conditioning was performed after performing the oxidation treatment for 25 silicon wafers, and, further, the plasma nitridation treatment was continuously performed for 25 silicon wafers.
  • the thickness of a silicon nitride film formed by the plasma nitridation treatment was measured by spectroellipsometry. As a result, as shown in FIG. 6 , the thickness of a nitride film was thinner on the wafer that was processed just after the conventional conditioning technique in which the substrate position was not changed. But, in contrast, a stable thickness of the nitride film was obtained in the case where the conditioning according to the present invention was performed.
  • the structure is such that the exhaust conductance of the reaction chamber 8 becomes larger when the substrate holder 2 is positioned in the transfer chamber 9 compared with when the substrate holder 2 is positioned in the reaction chamber 8 , using the moving means for moving the substrate holder 2 up and down between the reaction chamber 8 and the transfer chamber 9 . Accordingly, active species spread to the transfer chamber 9 to make it possible to perform the conditioning up to the inner wall thereof.
  • the exhaust conductance C of a cylindrical pipe can generally be represented by:
  • the symbol D is the diameter of the cylindrical pipe
  • the symbol L represents the length of the cylindrical pipe
  • the gap formed between the wall surface of the vacuum chamber 1 and the substrate holder 2 , works as the exhaust path and the substrate holder 2 works as a barrier wall in the exhaust path.
  • the substrate holder 2 has moved into the transfer chamber 9 , the substrate holder 2 , the barrier wall, is lowered and, therefore, the cross-sectional area of the exhaust route is expanded. Accordingly, this holder movement can be regarded as the same that the diameter of the cylindrical pipe is enlarged in Formula 1. Therefore, in the embodiment, it is possible to enlarge the exhaust conductance when the substrate holder 2 is positioned in the transfer chamber.
  • the present invention uses microwave as the external energy source, plasma having a high density can be obtained, and active species tend to spread easily in the vacuum chamber 1 to give a more preferable effect.
  • the present invention can include two or more gas systems, wherein, after the process using a first gas and before the process using a second gas, the conditioning using the second gas is performed.
  • an embodiment of the present invention may be provided with two or more systems of plural exhaust ports, wherein one system has a small conductance and another system has a large conductance. While the conditioning of the vacuum chamber is being performed, evacuation using the exhaust port having a large conductance makes pressure control easy, and enables to spread the densified plasma upon the conditioning.
  • an example of the plasma treatment apparatus incorporates the control section 1000 as a control device for controlling the plasma treatment apparatus, but the present invention is not limited to this.
  • the control section 1000 may be housed in a device (computer) separated from the plasma treatment apparatus.
  • the computer may be connected to the plasma treatment apparatus via a interface method, and a driver software may be installed into the computer to control respective components of the plasma treatment apparatus (gas introduction mechanism 1013 , external energy supply means 5 , substrate holder-moving motor 1014 , first exhaust mechanism 1015 and second exhaust mechanism 1016 ).
  • the computer can execute the control program shown in FIG. 5 and the conditioning treatment at Step 504 .
  • the present invention can include a treatment method as an embodiment thereof, in which the computer executes a program code read out of a storage medium where a program to carry out the aforementioned control system is installed. That is, the storage medium, which can be read by the computer to run the aforementioned control system, is also to be understood as one embodiment of the present invention. Moreover, needless to say, not only the storage medium storing the computer program, but also the computer program itself can be included in the embodiment.
  • a storage medium for example, a Floppy (registered trade mark) disk, a hard disk, an optical disk, a magneto optical disk, a CD-ROM, a magnetic tape, a nonvolatile memory card, or a ROM may be used.
  • a Floppy (registered trade mark) disk for example, a hard disk, an optical disk, a magneto optical disk, a CD-ROM, a magnetic tape, a nonvolatile memory card, or a ROM may be used.

Abstract

The present invention provides a plasma treatment apparatus and a conditioning method capable of performing a conditioning for the whole vacuum chamber. A plasma treatment apparatus according to an embodiment of the present invention is provided with a moving means for moving a substrate holder (2) between a reaction chamber (8) and a transfer chamber (9) lying on the under side thereof. Moreover, it has such structure that the exhaust conductance of the reaction chamber (8) becomes large when the substrate holder (2) lies in the transfer chamber. Upon the conditioning, the substrate holder (2) is moved to the transfer chamber (9) to allow diffusing species to spread widely, thereby effectively performing the conditioning for both reaction chamber (8) and transfer chamber (9) in the vacuum chamber (1).

Description

    CROSS-REFERENCES TO RELATED APPLICATIONS
  • This application is a continuation application of International Application No. PCT/JP2009/062811, filed on Jul. 15, 2009, the entire contents of which are incorporated by reference herein.
  • This application also claims the benefit of priority from Japanese Patent Application No. 2008-183824 filed Jul. 15, 2008, the entire contents of which are incorporated herein by reference.
    • TECHNICAL FIELD
  • The present invention relates to a method and an apparatus of plasma processing to form an oxide film, a nitride film or the like on a surface of a semiconductor substrate.
    • BACKGROUND ART
  • Until now, there has widely been known substrate treatment apparatuses in which a process gas is activated by plasma discharge to give a treatment to a substrate. In such substrate treatment apparatuses, a high-frequency voltage is applied between plural discharge electrodes to generate plasma, which excites and activates the applied gas to perform such substrate treatment as forming a thin film on a substrate surface or performing etching.
  • However, for example, when a contaminant exists in a chamber, it causes the contamination of the substrate after the treatment, or, when a residual gas exists, an intended effect of the treatment can not be sufficiently obtained. Therefore, for the purpose of adjusting an atmosphere in the chamber prior to the substrate treatment, it is generally performed to introduce a gas that is used in the treatment into the chamber and to generate plasma for conditioning the inside of a vacuum chamber. The conditioning exerts such effect as stabilizing the atmosphere in the chamber, and stabilizing the substrate treatment performance. The conditioning is particularly effective when it is followed by a lot start or a change of the process gas.
  • Next, the conditioning will be described along with the difference between the conditioning and cleaning that is widely performed for plasma treatment apparatuses. The cleaning means removing impurities generated during the treatment process and making the inside atmosphere and the inner wall of the chamber in a clean state. On the other hand, the conditioning means introducing gas to be used for the process treatment of a semiconductor substrate into the chamber before giving the process treatment, and adjusting the atmosphere in the chamber by making active species, generated by discharging the gas, adhere to the chamber inner wall for the purpose of stabilizing the treatment rate and the film properties throughout a continuous treatment.
  • When the conditioning is not performed, the state of the chamber inner wall becomes vulnerable to the progress of the treatment and the treatment rate in the continuous processing becomes unstable. Further, if impurities adhere to the chamber inner wall, impurities can be contained in the film to deteriorate film properties. The conditioning is performed in order to improve these adverse effects. As a result, the treatment rate of the continuous treatment becomes stable, and good film properties are obtained.
  • Patent Document 1 discloses an example of such plasma treatment apparatus. FIG. 3 shows the plasma treatment apparatus in Patent Document 1. The method in Patent Document 1 performs effective plasma conditioning by adjusting an electrode interval upon the conditioning, even when the electrode interval is narrowed to enhance the etching rate.
  • That is, an electrode elevating mechanism 108 makes the position of an upper electrode 103 variable, and widens the interval between a lower electrode 102 and the upper electrode 103 upon the conditioning as compared with that upon the etching to allow the plasma to spread widely. And, it is designed so as to remove reaction products and the like adhered to a vacuum chamber 101, the lower electrode 102, the upper electrode 103 and the like.
  • However, Patent Document 1 adopts such construction as generating plasma using electrodes of a parallel flat plate. Consequently, even when the interval between the upper and lower electrodes is widened upon the conditioning to allow the plasma to spread widely, the conditioning is not sufficiently performed in other places, although the conditioning effect is large between electrodes.
  • As another example, there is a plasma treatment apparatus described in Patent Document 2. FIG. 4 shows the treatment apparatus in Patent Document 2. The method in Patent Document 2 performs rapidly and uniformly the plasma conditioning of the inside of a vacuum vessel of an ECR type microwave plasma treatment apparatus.
  • That is, high density radicals are generated in a vacuum chamber (a plasma generation chamber 203, a delivery chamber 211). And the position of a stage 208 is set so that the effective conditioning area can expand to the distance, at which the density of the radicals is reduced to half. Then a plasma cleaning using the radicals is carried out. Specifically, the conditioning is performed while setting the gas pressure to be 50 mTorr or more, and moving the stage 208 for placing an object to be treated within 130 mm from the ECR area. The Document describes that the conditioning can be performed rapidly and uniformly within the limited area.
  • Patent Document 2 describes that the conditioning is performed in a state where the stage lies within 130 mm from the ECR area, however, in the case of this condition, most of the area to be conditioned is the reaction chamber, and the conditioning may not be effective for a lower portion of the vacuum chamber (the conditioning efficiency deteriorates significantly).
    • [Patent Document]
  • [Patent Document 1] Japanese Patent Laid-Open No. 05-343372
  • [Patent Document 2] Japanese Patent Laid-Open No. 06-097130
    • SUMMARY OF THE INVENTION
  • In the above-described conventional techniques active species for the conditioning spread only between the parallel plates where plasma is generated or in a small area inside the reaction chamber, and sufficient conditioning may not be performed for the whole interior area of the vacuum chamber. Consequently, there is such problem that the interior parts of the vacuum chamber with insufficient conditioning may give an influence on a film formation rate and film properties upon the substrate treatment.
  • A purpose of the present invention is to provide a method and apparatus of plasma treatment capable of performing sufficient conditioning for the whole interior part of the vacuum chamber, in order to solve the above problem.
  • A first aspect of the present invention may be a method of a plasma treatment using a plasma treatment apparatus, the apparatus comprising: a vacuum chamber having a transfer area for transferring a substrate to or from the inside and a reaction area for providing a process treatment for the substrate, and being used in a state of a reduced pressure; a substrate holder for holding the substrate; means for generating plasma in the reaction area; and a moving means for moving the substrate holder between the transfer area and the reaction area, the method comprising the steps of: moving the substrate holder to the transfer area by the moving means prior to providing the process treatment for the substrate in a state such that the substrate is not held on the substrate holder; introducing a same gas as the gas for performing a process treatment for the substrate into the vacuum chamber; generating plasma in the vacuum chamber by the means for generating plasma and making active species in the plasma adhere to the vacuum chamber inner wall to adjust the atmosphere in the vacuum chamber; and making the substrate holder hold the substrate and moving the substrate holder to the reaction area by the moving means to provide the process treatment for the substrate using the gas.
  • A second aspect of the present invention may be a plasma treatment apparatus comprising: a vacuum chamber having a transfer area for transferring a substrate to or from the inside and a reaction area for providing a process treatment for the substrate; a gas introduction means for introducing a prescribed gas into the vacuum chamber; a substrate holder for holding the substrate; means for generating plasma in the reaction area; and a moving means for moving the substrate holder between the transfer area and the reaction area, wherein: when a conditioning for adjusting an atmosphere in the vacuum chamber is necessary, a conditioning for adjusting an atmosphere in the vacuum chamber is practiced by: before providing the process treatment for the substrate, moving the substrate holder to the transfer area by the moving means; and after that introducing a same gas as the gas to be used in the process treatment into the vacuum chamber by the gas introduction means; generating plasma in the vacuum chamber by the means for generating plasma; and making active species in the plasma adhere to the vacuum chamber inner wall.
  • A third aspect of the present invention may be a control device of controlling a plasma treatment apparatus, the apparatus comprising: a vacuum chamber having a transfer area for transferring a substrate to or from the inside and a reaction area for providing a process treatment for the substrate; a gas introduction means for introducing a prescribed gas into the vacuum chamber; a substrate holder for holding the substrate; means for generating plasma in the reaction area; and a moving means for moving the substrate holder between the transfer area and the reaction area, and the control device comprising: means for determining whether or not a conditioning for the vacuum chamber is necessary before performing the process treatment for the substrate; means for controlling the moving means so that the substrate holder lies in the transfer area when the conditioning is determined to be necessary; means for controlling the gas introduction means so that a same gas as the gas to be used in the process treatment is introduced into the vacuum chamber before providing the process treatment for the substrate when the substrate holder lies in the transfer area; and means for controlling the means for generating plasma so that the plasma is generated in the vacuum chamber into which the gas has been introduced.
  • According to the present invention, it becomes possible to expand the conditioning effect to the whole internal area of the vacuum chamber and to stabilize the interior atmosphere of the vacuum chamber before the plasma treatment process by moving the substrate holder into the transfer chamber and enlarging an exhaust conductance with the reaction chamber. Accordingly, it is possible to stabilize the treatment rate and film properties of the plasma treatment for the substrate.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic view showing an embodiment of a plasma treatment apparatus according to the present invention.
  • FIG. 2 is a drawing showing the comparison of the present invention with a conventional technique for the relation between the number of treated substrates and the change in the film thickness.
  • FIG. 3 is a schematic view showing a plasma treatment apparatus of a conventional example.
  • FIG. 4 is a schematic view showing a plasma treatment apparatus of another conventional example.
  • FIG. 5 is a flow chart showing a procedure of performing the conditioning in the present invention.
  • FIG. 6 is a drawing showing the comparison of a conventional technique and the present invention for the effect of the conditioning when plasma nitridation is performed after plasma oxidation has been performed.
  • FIG. 7 is a block diagram showing a rough constitution of a control system in a plasma treatment apparatus according to the present invention.
    •  DESCRIPTION OF EMBODIMENTS
  • Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Meanwhile, in the drawings to be explained below, ones having the same function are given the same reference numeral, and a repeating explanation thereof is omitted.
  • FIG. 1 is a schematic view showing a constitution of an embodiment of a plasma treatment apparatus according to the present invention. In FIG. 1, the reference numeral “1” denotes a vacuum chamber for use in a state of reduced pressure. The vacuum chamber 1 is connected to a vacuum pump (not shown) and the inside of the vacuum chamber 1 is kept at an intended vacuum pressure.
  • In the upper portion of the vacuum chamber 1, a quartz part 3 is disposed. A quartz part 3 has a function of a transparent window for introducing external energy into the vacuum chamber 1 from an external energy supply means 5. External energy such as microwave is introduced into the vacuum chamber 1, to which the process gas is supplied, through the quartz part 3 from the external energy supply means 5 to generate a plasma 10.
  • The vacuum chamber 1 includes two chambers, a reaction chamber 8 in the upper portion thereof and a transfer chamber 9 in the lower portion thereof. Upon the plasma treatment for the substrate processing, plasma 10 is generated in the reaction chamber 8. The transfer chamber 9 is a chamber for carrying a semiconductor substrate to or from the inside of the vacuum chamber. In the vacuum chamber 1, a substrate holder 2 for holding a semiconductor substrate is provided.
  • The substrate holder 2 holds a semiconductor substrate, and moves up and down between the reaction chamber 8 and the transfer chamber 9 by a moving means (not shown). The moving means has, for example, a driving source such as a motor disposed outside of the vacuum chamber 1, an elevating mechanism to move the substrate holder 2 in the vertical direction utilizing driving power of the driving source, or the like. A semiconductor substrate is delivered one by one through an opening (not shown) into the transfer chamber 9, and the substrate is held on the substrate holder 2.
  • To carry out the plasma treatment for the semiconductor substrate, firstly, the semiconductor substrate is transferred one by one into the transfer chamber 9 through an opening (not shown) and is held on the substrate holder 2. Then, according to need, the semiconductor substrate is transported to a prescribed position (a treatment position) of the reaction chamber 8 being held on the substrate holder 2. The treatment position can be determined according to the requirement of treatment properties.
  • Next, external energy such as microwave is introduced into the vacuum chamber 1, to which a process gas is supplied, from the external energy supply means 5 through the part of the quartz part 3 to generate plasma 10 in the reaction chamber 8. The generated plasma 10 is used for performing a process treatment such as film forming for the semiconductor substrate held on the substrate holder 2.
  • The structure of the vacuum chamber is configured so that the exhaust conductance of the reaction chamber 8 is larger with the substrate holder 2 positioned in the transfer chamber 9 than in the reaction chamber 8. The vacuum chamber 1 is provided with a gas introduction port 4, and a mixture of two or more different process gases can be introduced into the vacuum chamber 1 from the gas introduction port 4.
  • The vacuum chamber 1 is provided with two or more exhaust systems that include plural exhaust ports. In the embodiment, as shown in FIG. 1, an exhaust port (larger) 6 having a larger exhaust volume and an exhaust port (smaller) 7 having a smaller exhaust volume are provided. That is, one system is set to have a smaller exhaust conductance, and another system is set to have a larger exhaust conductance.
  • Meanwhile, in the specification, the “exhaust conductance” means one described below. That is, generally, in a molecular flow region, a mass flow rate Q of a gas flow through a route is proportional to the difference in pressures (P1−P2), wherein P1 is a pressure at the inlet and P2 is that at the outlet. A proportionality constant C (=Q/(P1−P2)) is defined as the exhaust conductance.
  • In the embodiment, the exhaust conductance at the exhaust port is defined as the exhaust conductance C=(gas flow volume Q)/(pressure difference ΔP), from the pressure difference ΔP on the exhaust route when a prescribed gas mass flow rate Q is supplied. Accordingly, when the mass flow rate Q flowing in the exhaust route is set to a constant value, a larger exhaust conductance C leads to a smaller pressure difference ΔP, and the chamber is set at a lower pressure.
  • The exhaust conductance on the large flow volume side is desirably set to a magnitude of ten times or more than that on the small flow volume side. When the conditioning is performed, evacuation is performed using the exhaust port (larger) 6 having a large exhaust conductance to make diffusing species (active species) can spread in the vacuum chamber 1.
  • FIG. 7 is a block diagram showing a rough constitution of a control system in a plasma treatment apparatus of the embodiment.
  • In FIG. 7, reference numeral 1000 is a control section as a control means for controlling the whole plasma treatment apparatus. The control section 1000 has a CPU 1001 executing a processing action such as various calculations, control or discrimination, and a ROM 1002 storing a control program of processing or the like described later in FIG. 5, which is executed by the CPU 1001. Moreover, the control section 1000 has a RAM 1003 for temporarily storing data of the CPU 1001 on processing operation or input data, a nonvolatile memory 1004 such as a flash memory or SRAM, and the like.
  • Moreover, to the control section 1000, an input operation section 1005 including a keyboard for inputting a prescribed directions or data, or various switches, a display section 1006 for performing various display including an input or setting state of the plasma treatment apparatus, and a timer system 1007 capable of measuring elapsed time are connected. Further, to the control section 1000, a gas introduction mechanism 1013, an external energy supply means 5, a substrate holder-moving motor 1014, a first exhaust mechanism 1015 and a second exhaust mechanism 1016 are connected via drive circuits 1008, 1009, 1010, 1011 and 1012, respectively.
  • The gas introduction mechanism 1013 is connected to the gas introduction port 4, and introduces a prescribed process gas into the vacuum chamber 1 via the gas introduction port 4 according to the directions from the CPU 1001. The first exhaust mechanism 1015 and the second exhaust mechanism 1016 are connected to the exhaust port 6 and the exhaust port 7 respectively, and discharges said process gas in the vacuum chamber 1 according to the directions from the CPU 1001. The external energy supply means 5 supplies external energy such as microwave to the vacuum chamber 1 according to the directions from the CPU 1001.
  • As described above, the substrate holder 2 can be moved up and down by the moving means. The substrate holder 2 is connected to an elevating mechanism owned by the moving means, and, by the drive of the substrate holder-moving motor 1014, the elevating mechanism is actuated to move the substrate holder 2 up and down. That is, the substrate holder-moving motor is driven according to the directions from the CPU 1001, and, by the drive, the substrate holder 2 is moved.
  • Next, the action in the embodiment will be explained. In the embodiment, as the conditioning, a process of oxidation or nitridation is selected, which is practiced before introducing the semiconductor substrate into the plasma treatment apparatus. Moreover, the conditioning is practiced when a definite period of time has elapsed from the last plasma treatment, or when a gas of a different kind or composition from the gas used in the last plasma treatment is to be used.
  • FIG. 5 is a flow chart showing a treatment procedure concerning the conditioning treatment of a plasma treatment apparatus of the embodiment. Hereinafter, respective steps concerning the conditioning will be explained with reference to the flow chart.
  • At Step 501, the control section 1000 acquires process treatment initiation information including gas specifying information (information showing what kind or composition of gas will be used) for specifying gas for use in a current process treatment as a command of the process treatment initiation. Meanwhile, the embodiment is a mode capable of practicing oxidation treatment and nitridation treatment as the process treatment. Accordingly, when the oxidation treatment is performed, the gas specifying information is “information showing that the gas to be used is oxygen,” and when nitridation treatment is performed, the gas specifying information is “information showing that the gas to be used is nitrogen.”
  • That is, when a user inputs whether the current process treatment is an oxidation treatment or a nitridation treatment, and directions concerning the initiation of the current process treatment via the input operation section 1005, the control section 1000 acquires the process treatment initiation information according to the user input. At this time, when the user inputs that the current process treatment is an oxidation treatment, the process treatment initiation information includes “information showing that the gas to be used is oxygen” as the gas specifying information. On the other hand, when the user inputs that the current process treatment is a nitridation treatment, the process treatment initiation information includes “information showing that the gas to be used is nitrogen” as the gas specifying information.
  • At Step 502, the control section 1000 determines whether or not a prescribed time (for example, T seconds) has elapsed from the last process treatment. That is, the control section 1000 refers to a timer system 1007, calculates the elapsed time from the termination of the last process treatment until now, and determines whether or not the elapsed time is over T seconds.
  • As a method for calculating the elapsed time, for example, when the last process treatment terminates, the control section 1000 reads out information concerning the time at the termination from the timer system 1007, to make the nonvolatile memory 1004 memorize it. And, when acquiring process treatment initiation information at Step 501, at this step, the control section 1000 reads out information concerning the current time from the timer system 1007, and, on the basis of the information concerning the read out current time and the information concerning the time at the termination of the last process treatment stored in the nonvolatile memory 1004, calculates the difference between the current time and the time at the termination of the last process treatment. The difference is the elapsed time. Meanwhile, the time at the termination may be clock time, or elapsed time (differential time) from a reference point.
  • Moreover, as another method for calculating the elapsed time, a timer system 1007 having a stopwatch function capable of measuring the elapsed time from starting time to stopping time is used, and the control section 1000 starts the stopwatch function of the timer system 1007 at the same time when the last process treatment is terminated. Then, when the process treatment initiation information is acquired at Step 501, at this step, the control section 1000 stops the stopwatch function of the timer system 1007. The control section 1000 determines the time period measured from the starting time till the stopping time as the elapsed time.
  • As described above, in the embodiment, either method may be used when the elapsed time from the last process treatment can be acquired.
  • At Step 502, the control section 1000 progresses to Step 504 when it determines that T seconds have elapsed from the last process treatment, or to Step 503 when it determines that T seconds have not elapsed from the last process treatment.
  • At Step 503, the control section 1000 determines whether or not the kind or composition of the gas used in the last process treatment is different from the kind or composition of a gas to be used in the current process treatment. In the embodiment, when a certain process treatment is terminated, the control section 1000 makes the nonvolatile memory 1004 store the specifying information of the gas used (information showing what kind or composition of gas was used) for specifying the gas used in the certain process treatment on the basis of the gas specifying information included in the process treatment initiation information. Accordingly, the control section 1000 holds information concerning the kind or composition of the gas used in the last process treatment (the specifying information of the gas used for the last process treatment) before the initiation of the current process treatment.
  • Consequently, at this Step, the control section 1000 compares the specifying information of the gas used for the last process treatment stored in the nonvolatile memory 1004 with the gas specifying information included in the initiation information of the current process treatment, and determines whether or not the gas to be used in the current process treatment is different from the gas used in the last process treatment.
  • Meanwhile, in order to make a gas to be used be compared with the gas used in the current process treatment before the next process treatment, when the current process treatment practiced subsequently is terminated, the control section 1000 replaces the “specifying information of the gas used for the last process treatment” stored in the nonvolatile memory 1004 by the specifying information of the gas used for the current process treatment.
  • At Step 503, the control section 1000 progresses to Step 504 when it determines that the gas to be used in the current process treatment is different from the gas used in the last process treatment, or, progresses to Step 505 when it determines that the gas to be used in the current process treatment is the same as the gas used in the last process treatment.
  • At Step 504, the control section 1000 performs the conditioning treatment that is characteristic of the present invention. At the beginning, the control section 1000 moves the substrate holder 2 to the transfer chamber 9 in a state where a semiconductor substrate is not held on the substrate holder, by driving the substrate holder-moving motor 1014 (by the drive of a moving means not shown) by sending a control signal to the substrate holder-moving motor 1014 via the drive circuit 1010. As the result of moving the substrate holder 2 to the transfer chamber 9, since the exhaust conductance of the reaction chamber 8 becomes large as described above to spread diffusing species (active species) by plasma up to the transfer chamber 9 side, it becomes possible to perform the conditioning for the whole inner wall of the vacuum chamber 1.
  • Moreover, by using the exhaust port 6 having a large conductance among plural exhaust ports existing in two or more systems, diffusing species further spread in the vacuum chamber 1 to make it possible to perform the conditioning for the whole inner wall of the vacuum chamber 1.
  • Next, the control section 1000 sends a control signal to each of the gas introduction mechanism 1013 and the external energy means 5. The gas introduction mechanism 1013 that received the control signal supplies a process gas into the vacuum chamber 1 from the gas introduction port 4, and the external energy supply means 5 that received the control signal supplies microwave to the vacuum chamber 1 to generate plasma 10. Next, the control section 1000 sends a control signal to the first exhaust mechanism 1015, and the exhaust mechanism 1015 that received the control signal evacuates the inside of the vacuum chamber 1 using the exhaust port 6 down to a prescribed pressure. By such action, the plasma treatment apparatus makes diffusing species generated by the plasma 10 adhere to the inner wall of the vacuum chamber 1 to adjust the atmosphere in the vacuum chamber 1 and to perform the conditioning for the whole inner wall of the vacuum chamber 1. After the conditioning is sufficiently performed in the vacuum chamber 1 in this manner, the control section 1000 progresses to Step 505.
  • At Step 505, the control section 1000 initiates the current process treatment. That is, when a semiconductor substrate is transferred in the vacuum chamber 1, the control section 1000 sends a control signal to the substrate holder-moving motor 1014 via the drive circuit 1010 to drive the substrate holder-moving motor 1014, thereby making the substrate holder 2 move into the reaction chamber 8 to perform the process treatment for the semiconductor substrate in the reaction chamber 8.
  • Meanwhile, in FIG. 5, Step 502 and Step 503 are performed as the step for determining the transition to the conditioning treatment (Step 504). However, in an embodiment of the present invention, it is also possible to design so that either one of Step 502 and Step 503 alone is performed.
  • As described above, in the embodiment, the control section 1000 determines whether or not the conditioning for the vacuum chamber 1 is necessary before performing the current process treatment for the semiconductor substrate, at Steps 502 and 503, based on the elapsed time from the last process treatment and the comparison between the gas used in the last process treatment and the gas to be used in the current process treatment. Then, when the necessity of the conditioning is determined to be positive, the conditioning is performed at Step 504, and then the current process treatment is initiated at Step 505. On the other hand, when the necessity is determined to be negative, the current process treatment is directly initiated at Step 505.
  • In the embodiment, the determination of “YES” at steps 502 and 503 acts as a trigger to initiate the conditioning treatment at Step 504, but direct directions of initiating the conditioning treatment by a user may be used as a trigger to initiate the conditioning treatment at Step 504. In this case, for example, the control section 1000 displays a user interface for inputting directions that determines whether or not the conditioning treatment is necessary and the kind of a process treatment (such as a kind of gas to be used for the process treatment) on the display section 1006, to allow the user to input prescribed directions. When the user inputs directions showing whether or not the conditioning treatment is necessary, and the kind of the process treatment via the input operation section 1005, the control section 1000 acquires the process treatment initiation information. Meanwhile, the process treatment initiation information includes information showing whether or not the conditioning treatment is necessary, in addition to the gas specifying information. When the process treatment initiation information is acquired, the control section 1000 determines whether or not the conditioning for the vacuum chamber 1 is necessary based on the information showing whether or not the conditioning treatment is necessary. Then, when the conditioning is determined to be necessary, the treatment moves to the conditioning at Step 504, and, when the conditioning treatment is determined to be unnecessary, the current process treatment is initiated directly at Step 505.
    • First Example
  • The conditioning was performed by a conditioning method of the present invention in which the position of the substrate holder was changed, or by a conditioning method (conventional method) in which the position of the substrate holder was not changed. And after that, a continuous oxidation treatment for 25 silicon wafers was performed to compare the change of the thickness of a silicon oxide film relative to the number of treated wafers. Meanwhile, before the continuous oxidation treatment, a continuous nitridation treatment was performed with the apparatus above, and the inside of the vacuum chamber 1 and the inner wall thereof was filled with a nitrogen atmosphere until just before the conditioning.
  • Respective conditions of the nitridation treatment, the conditioning and the oxidation treatment are shown below.
  •
    Nitridation treatment
    Nitrogen gas flow rate: 500 sccm
    Pressure in chamber: 100 Pa
    Temperature: room temperature
    Nitridation time: 3 minutes (25 wafers were
    treated)
    Position of substrate holder: in reaction chamber
    Conditioning
    Oxygen gas flow rate: 500 sccm
    Pressure in chamber: 50 Pa
    Temperature: room temperature
    Conditioning time: 3 minutes
    Position of substrate holder: in transfer chamber
    Oxidation treatment
    Oxygen gas flow rate: 500 sccm
    Pressure in chamber: 100 Pa
    Temperature: room temperature
    Oxidation time: 2 minutes
    Position of substrate holder: in reaction chamber
  • FIG. 2 shows results thereof. When the conventional technique, in which the substrate position was not changed and the method of the present invention in which the substrate position was changed, are compared, the method of the present invention makes it possible to perform a stable process treatment throughout the 25 wafers. Since external energy is directed only for generating plasma independently of the stage position, the external energy is not limited to microwave.
    • Second Example
  • Using the same treatment apparatus as described in the first Example, the effect of the conditioning according to the present invention was verified by performing a plasma nitridation processing after a plasma oxidation processing.
  • The condition of plasma exposure upon the plasma oxidation and the plasma nitridation was set to be the same as in the first Example, the conditioning was performed after performing the oxidation treatment for 25 silicon wafers, and, further, the plasma nitridation treatment was continuously performed for 25 silicon wafers. The thickness of a silicon nitride film formed by the plasma nitridation treatment was measured by spectroellipsometry. As a result, as shown in FIG. 6, the thickness of a nitride film was thinner on the wafer that was processed just after the conventional conditioning technique in which the substrate position was not changed. But, in contrast, a stable thickness of the nitride film was obtained in the case where the conditioning according to the present invention was performed.
  • These results shows that the present invention removes a remaining atmosphere of the interior space of the chamber and one adhering to the surface thereof more effectively as compared with a conventional technique to adhere active species of the substrate-treatment plasma.
  • The embodiment has been explained referring to oxidation and nitridation as the example, but the present invention can be applied to cases where atmospheres in the vacuum chamber 1 are different, and can be used for every conditioning without limiting the gas system and the substrate treatment processes to those combined here.
  • Meanwhile, regarding the evacuation, it is more desirable to use an exhaust port having a smaller conductance upon the process treatment in order to make pressure control easy, and to use an exhaust port having a larger conductance upon the conditioning.
  • As described above, in the present invention, active species spread to the inner wall of the vacuum chamber 1 upon the conditioning, and, therefore, it becomes possible to perform the conditioning up to the interior wall of the transfer chamber 9 outside the reaction chamber 8. Therefore, the structure is such that the exhaust conductance of the reaction chamber 8 becomes larger when the substrate holder 2 is positioned in the transfer chamber 9 compared with when the substrate holder 2 is positioned in the reaction chamber 8, using the moving means for moving the substrate holder 2 up and down between the reaction chamber 8 and the transfer chamber 9. Accordingly, active species spread to the transfer chamber 9 to make it possible to perform the conditioning up to the inner wall thereof.
  • For example, the exhaust conductance C of a cylindrical pipe can generally be represented by:

  • C=121×D 3 /L  (Formula 1).
  • Here, in Formula 1, the symbol D is the diameter of the cylindrical pipe, and the symbol L represents the length of the cylindrical pipe.
  • In the embodiment, when the substrate holder 2 lies in the reaction chamber 8 the gap, formed between the wall surface of the vacuum chamber 1 and the substrate holder 2, works as the exhaust path and the substrate holder 2 works as a barrier wall in the exhaust path. In contrast, when the substrate holder 2 has moved into the transfer chamber 9, the substrate holder 2, the barrier wall, is lowered and, therefore, the cross-sectional area of the exhaust route is expanded. Accordingly, this holder movement can be regarded as the same that the diameter of the cylindrical pipe is enlarged in Formula 1. Therefore, in the embodiment, it is possible to enlarge the exhaust conductance when the substrate holder 2 is positioned in the transfer chamber.
  • Moreover, since the present invention uses microwave as the external energy source, plasma having a high density can be obtained, and active species tend to spread easily in the vacuum chamber 1 to give a more preferable effect.
  • Furthermore, the present invention can include two or more gas systems, wherein, after the process using a first gas and before the process using a second gas, the conditioning using the second gas is performed. Moreover, an embodiment of the present invention may be provided with two or more systems of plural exhaust ports, wherein one system has a small conductance and another system has a large conductance. While the conditioning of the vacuum chamber is being performed, evacuation using the exhaust port having a large conductance makes pressure control easy, and enables to spread the densified plasma upon the conditioning.
    • Other Embodiments
  • In the above described embodiment, an example of the plasma treatment apparatus incorporates the control section 1000 as a control device for controlling the plasma treatment apparatus, but the present invention is not limited to this. For example, the control section 1000 may be housed in a device (computer) separated from the plasma treatment apparatus. In this case, the computer may be connected to the plasma treatment apparatus via a interface method, and a driver software may be installed into the computer to control respective components of the plasma treatment apparatus (gas introduction mechanism 1013, external energy supply means 5, substrate holder-moving motor 1014, first exhaust mechanism 1015 and second exhaust mechanism 1016). With this arrangement, the computer can execute the control program shown in FIG. 5 and the conditioning treatment at Step 504.
  • The present invention can include a treatment method as an embodiment thereof, in which the computer executes a program code read out of a storage medium where a program to carry out the aforementioned control system is installed. That is, the storage medium, which can be read by the computer to run the aforementioned control system, is also to be understood as one embodiment of the present invention. Moreover, needless to say, not only the storage medium storing the computer program, but also the computer program itself can be included in the embodiment.
  • As such storage medium, for example, a Floppy (registered trade mark) disk, a hard disk, an optical disk, a magneto optical disk, a CD-ROM, a magnetic tape, a nonvolatile memory card, or a ROM may be used.
  • Furthermore, not only one that executes the processing by the single program stored in the storage medium, but also one that operates on an OS while cooperating with another software or the function of an extension board to execute the action of the embodiment is also included in the category of the embodiment.

Claims (9)

1. A method of a plasma treatment using a plasma treatment apparatus, the apparatus comprising:
a vacuum chamber having a transfer area for transferring a substrate to or from the inside and a reaction area for providing a process treatment for the substrate, and being used in a state of a reduced pressure;
a substrate holder for holding the substrate;
means for generating plasma in the reaction area; and
a moving means for moving the substrate holder between the transfer area and the reaction area,
the method comprising the steps of:
moving the substrate holder to the transfer area by the moving means prior to providing the process treatment for the substrate in a state such that the substrate is not held on the substrate holder;
introducing a same gas as the gas for performing a process treatment for the substrate into the vacuum chamber;
generating plasma in the vacuum chamber by the means for generating plasma and making active species in the plasma adhere to the vacuum chamber inner wall to adjust the atmosphere in the vacuum chamber; and
making the substrate holder hold the substrate and moving the substrate holder to the reaction area by the moving means to provide the process treatment for the substrate using the gas, wherein
plural exhaust ports having different conductances are provided for the vacuum chamber,
in the step of adjusting the atmosphere in the vacuum chamber, an exhaust port having a larger conductance among the plural exhaust ports is used, and
in the step of providing the process treatment, an exhaust port having a smaller conductance among the plural exhaust ports is used to discharge air.
2. A method of a plasma treatment according to claim 1, wherein the means for generating plasma supplies microwave into the vacuum chamber as an external energy source to generate the plasma.
3. (canceled)
4. A method of a plasma treatment according to claim 1, wherein the vacuum chamber is provided such that a first gas and a second gas can be introduced to, and the step of adjusting the atmosphere in the vacuum chamber using the second gas is performed after a first process treatment using a first gas, and before a second process treatment using the second gas.
5. A plasma treatment apparatus comprising:
a vacuum chamber having a transfer area for transferring a substrate to or from the inside and a reaction area for providing a process treatment for the substrate;
a gas introduction means for introducing a prescribed gas into the vacuum chamber;
a substrate holder for holding the substrate;
means for generating plasma in the reaction area;
a moving means for moving the substrate holder between the transfer area and the reaction area; and
plural exhaust ports having different conductances, wherein:
when a conditioning for adjusting an atmosphere in the vacuum chamber is necessary,
a conditioning for adjusting an atmosphere in the vacuum chamber is practiced by:
before providing the process treatment for the substrate, moving the substrate holder to the transfer area by the moving means; and after that
introducing a same gas as the gas to be used in the process treatment into the vacuum chamber by the gas introduction means;
generating plasma in the vacuum chamber by the means for generating plasma; and
making active species in the plasma adhere to the vacuum chamber inner wall, and wherein
in a case where the conditioning is practiced, an exhaust port having a larger conductance among the plural exhaust ports is used, and
in a case where the process treatment is provided for the substrate, an exhaust port having a smaller conductance among the plural exhaust ports is used.
6. A plasma treatment apparatus according to claim 5, wherein the case that requires the conditioning is a case that satisfies either one condition of the case where a gas composition is different from that in the last process treatment or the case where a prescribed time has elapsed from the last process treatment.
7. A control device of controlling a plasma treatment apparatus, the apparatus comprising:
a vacuum chamber having a transfer area for transferring a substrate to or from the inside and a reaction area for providing a process treatment for the substrate;
a gas introduction means for introducing a prescribed gas into the vacuum chamber;
a substrate holder for holding the substrate;
means for generating plasma in the reaction area;
a moving means for moving the substrate holder between the transfer area and the reaction area;
plural exhaust ports having different conductances; and
the control device comprising:
means for determining whether or not a conditioning for the vacuum chamber is necessary before performing the process treatment for the substrate;
means for controlling the moving means so that the substrate holder lies in the transfer area when the conditioning is determined to be necessary;
means for controlling the gas introduction means so that a same gas as the gas to be used in the process treatment is introduced into the vacuum chamber before providing the process treatment for the substrate when the substrate holder lies in the transfer area; and
means for controlling the means for generating plasma so that the plasma is generated in the vacuum chamber into which the gas has been introduced, wherein
the control device controls the plasma treatment apparatus so that in a case where the conditioning is practiced, an exhaust port having a larger conductance among the plural exhaust ports is used, and in a case where the process treatment is provided for the substrate, an exhaust port having a smaller conductance among the plural exhaust ports is used.
8. A computer program for causing a computer to function as the control device according to claim 7.
9. A storage medium storing a program capable of being read out by a computer, the storage medium storing the computer program according to claim 8.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160362782A1 (en) * 2015-06-15 2016-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same

Families Citing this family (136)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
SG11201504875UA (en) * 2012-12-20 2015-07-30 Canon Anelva Corp Method for manufacturing magnetoresistance effect element
WO2014097520A1 (en) * 2012-12-20 2014-06-26 キヤノンアネルバ株式会社 Oxidation treatment device, oxidation method, and method for producing electronic device
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
CN104937154B (en) 2013-01-22 2018-01-02 普里马洛夫特公司 Durability and water repellency with enhancing are blown into formula heat-barrier material
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) * 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
WO2017027260A1 (en) 2015-08-07 2017-02-16 Primaloft, Inc. Nonwoven down batting
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
JP7184767B2 (en) 2016-10-31 2022-12-06 プリマロフト，インコーポレイテッド air cured batting insulation
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
WO2018102281A1 (en) 2016-11-29 2018-06-07 Primaloft, Inc. Self-regulating batting insulation
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US20190360137A1 (en) 2017-01-19 2019-11-28 Primaloft, Inc. Insulation with reactive flaps
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US20200131678A1 (en) 2017-06-13 2020-04-30 Sysco Guest Supply, Llc Textile Products Comprising Natural Down and Fibrous Materials
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (en) 2018-02-28 2021-01-21 美商應用材料股份有限公司 Systems and methods to form airgaps
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091207A (en) * 1989-07-20 1992-02-25 Fujitsu Limited Process and apparatus for chemical vapor deposition
US5575853A (en) * 1994-07-01 1996-11-19 Tokyo Electron Limited Vacuum exhaust system for processing apparatus
US6478923B1 (en) * 1999-08-20 2002-11-12 Nec Corporation Vacuum operation apparatus
US20020192394A1 (en) * 1998-10-23 2002-12-19 Nissin Electric Co., Ltd. Thin polycrystalline silicon film forming method and thin film forming apparatus
US20030094135A1 (en) * 1999-12-24 2003-05-22 Taro Komiya Baffle plate, apparatus for producing the same, method of producing the same, and gas processing apparatus containing baffle plate
US20050176221A1 (en) * 1997-05-09 2005-08-11 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus
US20060231032A1 (en) * 2003-07-01 2006-10-19 Seishi Murakami Film-forming method and apparatus using plasma CVD
US20060289385A1 (en) * 2005-06-22 2006-12-28 Tokyo Electron Limited Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
US20100120238A1 (en) * 2007-06-07 2010-05-13 Canon Anelva Corporation Semiconductor manufacturing apparatus and method

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516475A (en) * 1978-07-21 1980-02-05 Nec Corp Plasma processing unit
US4313783A (en) * 1980-05-19 1982-02-02 Branson International Plasma Corporation Computer controlled system for processing semiconductor wafers
JP3123219B2 (en) 1992-06-05 2001-01-09 松下電器産業株式会社 Cleaning method for dry etching equipment
JPH0697130A (en) 1992-09-16 1994-04-08 Fuji Electric Co Ltd Plasma cleaning method
JP3863329B2 (en) * 1999-11-05 2006-12-27 ローム株式会社 Loading drive system
JP3725100B2 (en) * 2002-07-31 2005-12-07 アプライド マテリアルズ インコーポレイテッド Deposition method
JP2007073751A (en) 2005-09-07 2007-03-22 Hitachi High-Technologies Corp Plasma processing apparatus and method therefor
JP5324026B2 (en) * 2006-01-18 2013-10-23 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing apparatus control method
JP4911583B2 (en) * 2006-08-28 2012-04-04 ルネサスエレクトロニクス株式会社 CVD equipment
JP2008248395A (en) * 2008-07-02 2008-10-16 Sharp Corp Plasma treating apparatus and pressure control method of plasma treating apparatus

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5091207A (en) * 1989-07-20 1992-02-25 Fujitsu Limited Process and apparatus for chemical vapor deposition
US5575853A (en) * 1994-07-01 1996-11-19 Tokyo Electron Limited Vacuum exhaust system for processing apparatus
US20050176221A1 (en) * 1997-05-09 2005-08-11 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus
US20020192394A1 (en) * 1998-10-23 2002-12-19 Nissin Electric Co., Ltd. Thin polycrystalline silicon film forming method and thin film forming apparatus
US6478923B1 (en) * 1999-08-20 2002-11-12 Nec Corporation Vacuum operation apparatus
US20030094135A1 (en) * 1999-12-24 2003-05-22 Taro Komiya Baffle plate, apparatus for producing the same, method of producing the same, and gas processing apparatus containing baffle plate
US20060231032A1 (en) * 2003-07-01 2006-10-19 Seishi Murakami Film-forming method and apparatus using plasma CVD
US20060289385A1 (en) * 2005-06-22 2006-12-28 Tokyo Electron Limited Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
US20100120238A1 (en) * 2007-06-07 2010-05-13 Canon Anelva Corporation Semiconductor manufacturing apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160362782A1 (en) * 2015-06-15 2016-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same

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