US20100133569A1 - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- US20100133569A1 US20100133569A1 US12/584,417 US58441709A US2010133569A1 US 20100133569 A1 US20100133569 A1 US 20100133569A1 US 58441709 A US58441709 A US 58441709A US 2010133569 A1 US2010133569 A1 US 2010133569A1
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- carbon nanotube
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- emitting diode
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 99
- 239000004065 semiconductor Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000002238 carbon nanotube film Substances 0.000 claims description 71
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
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- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- 230000007423 decrease Effects 0.000 description 2
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- 229910005538 GaSn Inorganic materials 0.000 description 1
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- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000006243 chemical reaction Methods 0.000 description 1
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- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- 239000002109 single walled nanotube Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
- This application is related to applications entitled, “METHOD FOR FABRICATING LIGHT EMITTING DIODE”, filed **** (Atty. Docket No. US23023).
- 1. Technical Field
- The present disclosure relates to a light emitting diode (LED).
- 2. Description of the Related Art
- LEDs are semiconductors that convert electrical energy into light. Compared to conventional light sources, the LEDs have higher energy conversion efficiency, higher radiance (i.e., they emit a larger quantity of light per unit area), longer lifetime, higher response speed, and better reliability. At the same time, LEDs generate less heat. Therefore, LED modules are widely used in particular as a semiconductor light source in conjunction with imaging optical systems, such as displays, projectors, and so on.
- Referring to
FIG. 6 , atypical LED 10, according to the prior art includes asubstrate 110, a GaNbumper layer 120, an N-type GaN layer 132, anactive layer 134, a P-type GaN layer 136, and atransparent contact layer 140. The GaNbumper layer 120, the N-type GaN layer 132, theactive layer 134, the P-type GaN layer 136, and thetransparent contact layer 140 are stacked on thesubstrate 110. TheLED 10 further includes a transparentconductive layer 150, afirst electrode 142, and asecond electrode 144. Thefirst electrode 142 is disposed on the N-type semiconductor layer 132. The transparentconductive layer 150 and thesecond electrode 144 are disposed on thetransparent contact layer 140. The transparentconductive layer 150 is made of indium tin oxide (ITO) and the ITO is sputtered on an area of thetransparent contact layer 140. Due to the net structure of the ITO layer, the lateral distribution of current applied on the transparentconductive layer 150 is uniform, thereby improving the extraction efficiency of light of the LED. However, the ITO layer has some faults, such as low mechanical strength and resistance distribution. Furthermore, the transparency of the ITO layer may be decreased in humid environments and the ITO layer may absorb some of the light emitted by theactive layer 134 when the ITO fully covers the P-type semiconductor layer 136. - What is needed, therefore, is a light emitting diode, which can overcome the above-described shortcomings.
- Many aspects of the embodiments can be better understood with reference to the following drawings. The components in the drawings are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the embodiments. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the several views.
-
FIG. 1 is a schematic, partial exploded view of a light emitting diode according to an embodiment. -
FIG. 2 is a schematic view of the light emitting diode ofFIG. 1 . -
FIG. 3 is a scanning electron microscope (SEM) image of a carbon nanotube film used in the light emitting diode ofFIG. 1 . -
FIG. 4 is a schematic view of a light emitting diode according to an another embodiment. -
FIG. 5 is a schematic view of a light emitting diode according to an embodiment. -
FIG. 6 is schematic, cross-sectional view of a typical light emitting diode according to prior art. - The disclosure is illustrated by way of example and not by way of limitation in the figures of the accompanying drawings in which like references indicate similar elements. It should be noted that references to “an” or “one” embodiment in this disclosure are not necessarily to the same embodiment, and such references mean at least one.
- Referring to
FIG. 1 andFIG. 2 , a first embodiment of a light emitting diode (LED) 20 includes asubstrate 210, afirst semiconductor layer 232, anactive layer 234, asecond semiconductor layer 236, afirst electrode 242, asecond electrode 244, a transparentconductive layer 250, and astatic electrode 240. Thefirst semiconductor layer 232, theactive layer 234, thesecond semiconductor layer 234 are orderly stacked on thesubstrate 210. Thefirst electrode 242 is electrically connected to thefirst semiconductor layer 232. The transparentconductive layer 250 is disposed on the top surface of thesecond semiconductor layer 236 and electrically connected to thesecond semiconductor layer 236. Thestatic electrode 240 is interposed between thesecond semiconductor layer 236 and the transparentconductive layer 250. Thesecond electrode 244 is disposed on the top surface of the transparentconductive layer 250 and electrically connected to the transparentconductive layer 250. - The
substrate 210 may have a thickness of about 300 microns (μm) to about 500 μm and a transparent plate for supporting the other elements, such as the first andsecond semiconductor layers substrate 210 may be made of sapphire, gallium arsenide, indium phosphate, silicon nitride, gallium nitride, zinc oxide, aluminum silicon nitride, silicon carbon, or their combinations. In one embodiment, thesubstrate 210 is made of sapphire and has a thickness of 400 μm. - The
first semiconductor layer 232, theactive layer 234, and thesecond semiconductor layer 236 can be stacked on thesubstrate 210 via a process of metal organic chemical vapor deposition (MOCVD). - The
first semiconductor layer 232 has a thickness of about 1 μm to about 5 μm. Thesecond semiconductor layer 236 has a thickness of about 0.1 μm to about 3 μm. When thefirst semiconductor layer 232 is an N-type semiconductor, thesecond semiconductor layer 236 is a P-type semiconductor, and vice versa. In one embodiment, thefirst semiconductor layer 232 is an N-type semiconductor and thesecond semiconductor layer 236 is a P-type semiconductor. Thefirst semiconductor layer 232 has a step-shaped structure and includes afirst surface 262 and asecond surface 264 located on the same side as thefirst surface 262. Thefirst surface 262 and thesecond surface 264 have different heights and form a step-shaped structure. Theactive layer 234 and thesecond semiconductor layer 236 are arranged on thefirst surface 262. - The
first semiconductor layer 232 is configured to provide electrons, and thesecond semiconductor layer 236 is configured to provide cavities. When a voltage is applied to the first andsecond semiconductor layers second semiconductor 236 and incorporate with the cavities, thereby emitting light. Thefirst semiconductor layer 232 may be made of N-type gallium nitride, N-type gallium arsenide, or N-type copper phosphate. Thesecond semiconductor layer 236 may be made of P-type gallium nitride, P-type gallium arsenide, or P-type copper phosphate. In one embodiment, thefirst semiconductor layer 232 is made of N-type gallium nitride and has a thickness of 2 μm, and thesecond semiconductor layer 236 is made of P-type gallium nitride and has a thickness of 0.3 μm. - The
active layer 234, in which the electrons fill the holes, has a thickness of about 0.01 μm to about 0.6 μm. Theactive layer 234 is a photon exciting layer and can be one of a single quantum well layer or multilayer quantum well films. Theactive layer 140 can be made of GaInN, AlGaInN, GaSn, AlGaSn, GaInP, or GaInSn. In one embodiment, theactive layer 234 has a thickness of 0.3 μm and includes one layer of GaInN stacked with a layer of GaN. - The
static electrode 240 is formed on the top surface of thesecond semiconductor layer 236. Thestatic electrode 240 may be a P-type electrode or an N-type electrode and is a same type as thesecond semiconductor layer 236. Therefore, in one embodiment, thestatic electrode 236 is a P-type electrode. Understandably, thestatic electrode 236 can function as a reflection layer. Thestatic electrode 236 can have one or more layers of metal and may be made of titanium, aluminum, nickel, gold, or any combinations thereof In one embodiment, thestatic electrode 236 has two layers. One layer is made of titanium and has a thickness of 15 nanometers (nm). The other layer is made of gold and has a thickness of 100 nm. Thestatic electrode 240 is formed on thesecond semiconductor layer 236 via a process of physical vapor deposition, such as electron evaporation, vacuum evaporation, ion sputtering, or the like. - Further, a functioning layer may be formed between the
substrate 210 and thefirst semiconductor layer 232. The functioning layer may be one or more of a buffer layers, a reflective layer, and a photon crystal structure. The buffer layer is configured to improve epitaxial growth and decrease lattice mismatch. The buffer layer may be made of GaN, AlN, or the like. The reflective layer is configured to change the transmission route of the light to improve extraction efficiency of light in the LED. The reflective layer may be made of silver, aluminum, rhodium, or the like. The photon crystal structure is configured to improve extraction efficiency of light and may be made of silicon, indium tin oxide, carbon nanotube, or the like. In one embodiment, only thebuffer layer 220 is formed on thesubstrate 210 and is made of GaN. Thebuffer layer 220 has a thickness of about 20 nm to about 50 nm. - The transparent
conductive layer 250 includes a carbon nanotube structure. The transparentconductive layer 250 can be directly applied to the top surface of thesecond semiconductor layer 236 and thestatic electrode 240. The transparentconductive layer 250 may only cover the exposed surface of thesecond semiconductor layer 236 and fully or partly cover both the top surface of thestatic electrode 240 and thesecond semiconductor layer 236. In one embodiment, the transparentconductive layer 250 fully covers both thesecond semiconductor layer 236 and thestatic electrode 240. The carbon nanotube structure may include at least one carbon nanotube film and/or a number of carbon nanotube wires. The use of all types of carbon nanotube films and/or carbon nanotube wires is envisioned to be employed by the transparentconductive layer 250. There is no particular restriction on the thickness of the carbon nanotube structure and it may be appropriately selected depending on the purpose, and may be, for example, greater than 0.5 nm, and more specifically from about 0.5 μm to 200 μm. - The carbon nanotube structure can include one or more layers of carbon nanotube films. When the carbon nanotube structure includes a number of carbon nanotube films, the carbon nanotube films are stacked on top of each other. The carbon nanotube structure can employ more carbon nanotube films to increase the tensile strength of the carbon nanotube composite 100. The carbon nanotube film has a thickness in an approximate range from about 0.5 nm to about 100 mm. The carbon nanotubes films may have a free-standing structure. The film structure being supported by itself and does not require a substrate to maintain its structural integrity. As an example, a corner of the carbon nanotube film can be lifted without resulting in damage to the entire structure.
- Referring to
FIG. 3 , the carbon nanotube films each are formed by the carbon nanotubes, orderly or disorderly, and has substantially a uniform thickness. Ordered carbon nanotube films include films where the carbon nanotubes are arranged along a primary direction. Examples include films wherein the carbon nanotubes are arranged approximately along a same direction or have two or more sections within each of which the carbon nanotubes are arranged approximately along a same direction (different sections can have different directions). In the ordered carbon nanotube films, the carbon nanotubes are oriented along the same preferred orientation and approximately parallel to each other. A film can be drawn from a carbon nanotube array, to form the ordered carbon nanotube film, namely a drawn carbon nanotube film. Examples of drawn carbon nanotube film are taught by U.S. Pat. No. 7,045,108 to Jiang et al., and WO 2007015710 to Zhang et al. The drawn carbon nanotube film includes a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween. The drawn carbon nanotube film is a free-standing film. The carbon nanotube film can be treated with an organic solvent to increase the mechanical strength and toughness of the carbon nanotube film and reduce the coefficient of friction of the carbon nanotube film. A thickness of the carbon nanotube film can range from about 0.5 nanometers to about 100 micrometers. - The ordered carbon nanotube film may be a pressed carbon nanotube film having a number of carbon nanotubes arranged along a same direction. The carbon nanotubes in the pressed carbon nanotube film can rest upon each other. Adjacent carbon nanotubes are attracted to each other and combined by van der Waals attractive force. An angle between a primary alignment direction of the carbon nanotubes and a surface of the pressed carbon nanotube film is 0 degree to approximately 15 degrees. The greater the pressure applied, the smaller the angle formed. The thickness of the pressed carbon nanotube film ranges from about 0.5 nm to about 1 mm. Examples of pressed carbon nanotube film are taught by US application 20080299031A1 to Liu et al.
- The disordered carbon nanotube film comprises carbon nanotubes arranged in a disorderly fashion. Disordered carbon nanotube films include randomly aligned carbon nanotubes. When the disordered carbon nanotube film comprises of a film wherein the number of the carbon nanotubes aligned in every direction is substantially equal, the disordered carbon nanotube film can be isotropic. The disordered carbon nanotubes can be entangled with each other and/or are substantially parallel to a surface of the disordered carbon nanotube film. The disordered carbon nanotube film may be a flocculated carbon nanotube film. The flocculated carbon nanotube film can include a plurality of long, curved, disordered carbon nanotubes entangled with each other. The carbon nanotubes can be substantially uniformly dispersed in the flocculated carbon nanotube film. Adjacent carbon nanotubes are attracted by van der Waals attractive force to form an entangled structure with micropores defined therein. It is understood that the flocculated carbon nanotube film is very porous. Sizes of the micropores can be less than 10 μm. Due to the carbon nanotubes in the flocculated carbon nanotube film being entangled with each other, the carbon nanotube structure employing the flocculated carbon nanotube film has excellent durability, and can be fashioned into desired shapes with a low risk to the integrity of the flocculated carbon nanotube film. The thickness of the flocculated carbon nanotube film can range from about 0.5 nm to about 1 millimeter (mm).
- The disordered carbon nanotube film may be a pressed carbon nanotube film having a number of carbon nanotubes arranged along different directions. The pressed carbon nanotube film can be a free-standing carbon nanotube film. When the carbon nanotubes in the pressed carbon nanotube film are arranged along different directions, the pressed carbon nanotube film can be isotropic. As described above, the thickness of the pressed carbon nanotube film ranges from about 0.5 nm to about 1 mm. Examples of pressed carbon nanotube film are taught by US application 20080299031A1 to Liu et al.
- Length and width of the carbon nanotube film can be arbitrarily set as desired. A thickness of the carbon nanotube film is in a range from about 0.5 nm to about 100 μm. The carbon nanotubes in the carbon nanotube film can be single-walled, double-walled, multi-walled carbon nanotubes, and combinations thereof. Diameters of the single-walled carbon nanotubes, the double-walled carbon nanotubes, and the multi-walled carbon nanotubes can, respectively, be in the approximate range from about 0.5 nm to about 50 nm, about 1 nm to about 50 nm, and about 1.5 nm to about 50 nm.
- The carbon nanotube structure include a number of carbon nanotube wires. The carbon nanotube wires may be arraigned side by side on the top surface of the second semiconductor layer or may be weaved into a carbon nanotube layer. The weaved carbon nanotube layer is applied to the second semiconductor layer. The carbon nanotube wire includes untwisted carbon nanotube wire and twisted carbon nanotube wire. The untwisted carbon nanotube wire includes a number of carbon nanotubes parallel to each other. The twisted carbon nanotube wire includes a number of carbon nanotube helically twisted along a longitudinal axis of the twist carbon nanotube wire.
- The untwisted carbon nanotube wire can be formed by treating the drawn carbon nanotube film with an organic solvent. The drawn carbon nanotube film is treated by applying the organic solvent to the carbon nanotube film while being free to bundle. After being soaked by the organic solvent, the adjacent paralleled carbon nanotubes in the drawn carbon nanotube film will bundle together, due to the surface tension of the organic solvent when the organic solvent volatilizing, and thus, the drawn carbon nanotube film will be shrunk into untwisted carbon nanotube wire. The carbon nanotubes of the untwisted carbon nanotube wires are substantially parallel to each other along the longitudinal axis of the untwisted carbon nanotube wires. Examples of the untwisted carbon nanotube wire are taught by U.S. Pat. No. 7,045,108 to Fan et al. and US publication No. 20070166223 to Fan et al.
- The twisted carbon nanotube wire can be formed by twisting a drawn carbon nanotube film by using a mechanical force to turn the two ends of the drawn carbon nanotube film in opposite directions. Further, the twisted carbon nanotube wire can be treated by applying the organic solvent. After applying the organic solvent, the adjacent carbon nanotubes in the twisted carbon nanotube film will bundle together, due to the surface tension of the organic solvent when the organic solvent volatilizing, and thus, the twisted carbon nanotube wire may have less specific surface area, and larger density and strength than an untreated twisted carbon nanotube wire.
- The transparent
conductive layer 250 may be made by steps of forming a metal layer (not shown) on the carbon nanotube structure and heating the metal layer in a temperature of about 300 degrees centigrade to about 500 degrees centigrade for about 3 minutes to about 10 minutes. The metal layer may be a single-layer structure or a multi-layered structure. In one embodiment, the metal layer includes a nickel layer stacked with a gold layer. The nickel layer has a thickness of about 2 nm. The gold layer has a thickness of 5 nm. Since the metal layer decreases in thickness because of the heating, the metal molecule of the metal layer can be melted and can aggregate into a number of metal particles by surface tension. The carbon nanotube structure has a plurality of micropores between adjacent carbon nanotubes of the carbon nanotube structure. These metal particles uniformly disperse in the micropores of the carbon nanotube structure to form a composite film. The composite film, which functions as the transparentconductive layer 250, has better electrical conductivity than the pure carbon nanotube structure, thereby improving current injection efficiency and electrical contact between the carbon nanotube structure and thestatic electrode 240, thefirst electrode 242, and thesecond semiconductor layer 236. - In one embodiment, two drawn carbon nanotube films are coated on the
second semiconductor layer 236 and thestatic electrode 340. An angle between the primary directions of the two drawn carbon nanotube films ranges from about 0 degrees to about 90 degrees. In one embodiment, the primary directions of the two drawn carbon nanotube films are perpendicular to each other. - The
first electrode 242 can be deposited on the transparentconductive layer 250 via physical vapor deposition and may have single-layer structure or multi-layered structure. Thefirst electrode 242 can be made of titanium or gold. In one embodiment, thefirst electrode 242 includes two layers, one layer is titanium and has a thickness of 15 nm and another layer is gold and has a thickness of 200 nm. At least a portion of the carbon nanotube structure is located between thestatic electrode 240 and thefirst electrode 242. Thefirst electrode 242 may be P-type or N-type electrode and is the same type as thestatic electrode 240 and thesecond semiconductor layer 236. Since thestatic electrode 240 is made of P-type material, thefirst electrode 242 is a P-type electrode. When theLED 20 has thestatic electrode 240, thefirst electrode 242 should be located above thestatic electrode 240. When the LED has nostatic electrode 240, thefirst electrode 242 can be located at any position on the transparentconductive layer 250. In one embodiment, since the LED employs thestatic electrode 240, thefirst electrode 242 is located above thestatic electrode 242. Thefirst electrode 242 and thestatic electrode 240 function together as the - P-type electrode of the LED. The
second electrode 244 is a same polarity type with thefirst semiconductor layer 236 and may be made of N-type material. Thesecond electrode 244 is deposited on thesecond surface 264 of thefirst semiconductor layer 236. Thesecond electrode 244 has a same structure as thefirst electrode 242 and includes a titanium layer and a gold layer stacked on the titanium layer. The titanium layer has a thickness of about 15 nm and the gold layer has a thickness of about 200 nm. The method of depositing thesecond electrode 244 can be the same as that of thefirst electrode 242. The first andsecond electrodes - Referring to
FIG. 4 , in one embodiment, anLED 30 includes asubstrate 310, abuffer layer 320, afirst semiconductor layer 332, anactive layer 334, asecond semiconductor layer 336, afirst electrode 342, asecond electrode 344, a transparentconductive layer 350, and astatic electrode 340. Thebuffer layer 320, thefirst semiconductor layer 332, theactive layer 334, thesecond semiconductor layer 336 are orderly stacked on thesubstrate 310. - The
first semiconductor layer 332 includes afirst surface 362 and asecond surface 364 located on the same side as thefirst surface 362. Thefirst surface 362 and thesecond surface 364 have different heights and form a stepped structure. Theactive layer 334 and thesecond semiconductor layer 336 are disposed on thefirst surface 362. The transparentconductive layer 350 is disposed on thesecond surface 364 of thefirst semiconductor layer 332 and electrically connected to thefirst semiconductor layer 332. Further, thestatic electrode 340 is interposed between thefirst semiconductor layer 332 and the transparentconductive layer 350. Thefirst electrode 342 is disposed on the top surface of the transparentconductive layer 350 and electrically connected to the transparentconductive layer 350. Thesecond electrode 344 is electrically connected to thesecond semiconductor layer 336. - Referring to
FIG. 5 , in one embodiment, anLED 40 includes asubstrate 410, abuffer layer 420, afirst semiconductor layer 432, anactive layer 434, asecond semiconductor layer 436, afirst electrode 442, asecond electrode 444, a first transparentconductive layers 450, a second transparentconductive layer 452, and a firststatic electrode 440, a second static electrode 446. Thebuffer layer 420, thefirst semiconductor layer 432, theactive layer 434, thesecond semiconductor layer 436 are orderly stacked on thesubstrate 310. - The
first semiconductor layer 432 includes afirst surface 462 and asecond surface 464 located on the same side a thefirst surface 462. Thefirst surface 462 and thesecond surface 464 have different heights and form a stepped structure. The second transparentconductive layer 452 is mounted on thesecond semiconductor layer 436, and the first transparentconductive layer 450 is mounted on thesecond surface 464 of thefirst semiconductor layer 432. Further, the firststatic electrode 440 is located between thesecond semiconductor layer 436 and the second transparentconductive layer 452, and thesecond electrode 444 is disposed on the top surface of the second transparentconductive layer 452. The second static electrode 446 is interposed between thefirst semiconductor layer 436 and the first transparentconductive layer 450, and thefirst electrode 442 is disposed on the top surface of the first transparentconductive layer 450. - Since the carbon nanotubes have better electrical conductivity and mechanical strength than conventional material, such as indium tin oxide, the carbon nanotube structure has better electrical conductivity and mechanical strength, thereby improving power efficiency and life span. Further, the carbon nanotube structure is stays transparent in varied humid environments. Therefore less of the light emitted by the active layer is absorbed. Thus, the LED has good extraction efficiency in comparison with the typical LED.
- It is to be understood, however, that even though numerous characteristics and advantages of the present embodiments have been set forth in the foregoing description, together with details of the structures and functions of the embodiments, the disclosure is illustrative only, and changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the disclosure to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed.
Claims (18)
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US9748444B2 (en) | 2017-08-29 |
CN101752477A (en) | 2010-06-23 |
US10205056B2 (en) | 2019-02-12 |
US20150214437A1 (en) | 2015-07-30 |
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