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Amorphous oxide and thin film transistor

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US20090280600A1
US20090280600A1 US12504158 US50415809A US2009280600A1 US 20090280600 A1 US20090280600 A1 US 20090280600A1 US 12504158 US12504158 US 12504158 US 50415809 A US50415809 A US 50415809A US 2009280600 A1 US2009280600 A1 US 2009280600A1
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film
amorphous
oxide
electron
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Hideo Hosono
Masahiro Hirano
Hiromichi Ota
Toshio Kamiya
Kenji Nomura
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Japan Science and Technology Agency
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    • H01L29/78696Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H01L29/78693Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous

Abstract

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • [0001]
    This is a divisional application of U.S. patent application Ser. No. 10/592,431, filed on Sep. 11, 2006, currently pending, which is a 371 of International Application No. PCT/JP05/03273, filed on Feb. 28, 2005, which claims the benefit of priority from the prior Japanese Patent Application Nos. 2004-071477, filed on Mar. 12, 2004 and 2004-325938 filed on Nov. 10, 2004, the entire contents of which are incorporated herein by references.
  • TECHNICAL FIELD
  • [0002]
    The present invention relates to amorphous oxides and thin film transistors.
  • BACKGROUND ART
  • [0003]
    A thin film transistor (TFT) is a three-terminal element having a gate terminal, a source terminal, and a drain terminal. It is an active element in which a semiconductor thin film deposited on a substrate is used as a channel layer for transportation of electrons or holes and a voltage is applied to the gate terminal to control the current flowing in the channel layer and switch the current between the source terminal and the drain terminal. Currently, the most widely used TFTs are metal-insulator-semiconductor field effect transistors (MIS-FETs) in which the channel layer is composed of a polysilicon or amorphous silicon film.
  • [0004]
    Recently, development of TFTs in which ZnO-based transparent conductive oxide polycrystalline thin films are used as the channel layers has been actively pursued (Patent Document 1). These thin films can be formed at low temperatures and is transparent in visible light; thus, flexible, transparent TFTs can be formed on substrates such as plastic boards and films.
  • [0005]
    However, known ZnO rarely forms a stable amorphous phase at room temperature and mostly exhibits polycrystalline phase; therefore, the electron mobility cannot be increased because of the diffusion at the interfaces of polycrystalline grains. Moreover, ZnO tends to contain oxygen defects and a large number of carrier electrons, and it is thus difficult to decrease the electrical conductivity. Therefore, it has been difficult to increase the on/off ratio of the transistors.
  • [0006]
    Patent Document 2 discloses an amorphous oxide represented by ZnxMyInzO(x+3y/2+3z/2) (wherein M is at least one element selected from Al and Ga, the ratio x/y is in the range of 0.2 to 12, and the ratio z/y is in the range of 0.4 to 1.4). However, the electron carrier concentration of the amorphous oxide film obtained herein is 1018/cm3 or more. Although this is sufficient for regular transparent electrodes, the film cannot be easily applied to a channel layer of a TFT. This is because it has been found that a TFT having a channel layer composed of this amorphous oxide film does not exhibit a sufficient on/off ratio and is thus unsuitable for TFT of a normally off type.
  • Patent Document 1: Japanese Unexamined Patent Application Publication No. 2003-298062 Patent Document 2: Japanese Unexamined Patent Application Publication No. 2000-044236 DISCLOSURE OF INVENTION
  • [0007]
    An object of the present invention is to provide an amorphous oxide having a low electron carrier concentration and to provide a thin film transistor having a channel layer composed of such an amorphous oxide.
  • [0008]
    The present invention provides: (1) an amorphous oxide having an electron carrier concentration less than 1018/cm3. In the present invention, the electron carrier concentration of the amorphous oxide is preferably 1017/cm3 or less or 1016/cm3 or less.
  • [0009]
    The present invention also provides: (2) an amorphous oxide in which electron mobility thereof increases with the electron carrier concentration.
  • [0010]
    The present invention also provides: (3) the amorphous oxide according to item (1) or (2) above, in which the electron mobility is more than 0.1 cm2/(V·sec).
  • [0011]
    The present invention also provides: (4) the amorphous oxide according to item (2) or (3) above, exhibiting degenerate conduction. Note that “degenerate conduction” used herein is defined as a state in which the thermal activation energy for temperature dependency of electrical resistance is 30 meV or less.
  • [0012]
    Another aspect of the present invention provides: (5) the amorphous oxide according to any one of items (1) to (4) above, in which the amorphous oxide is a compound that contains at least one element selected from Zn, In, and Sn as a constituent and is represented by [(Sn1−xM4x)O2]a.[In1−yM3y)2O3]b.[(Zn1−zM2z)O]c (wherein 0≦x≦1, 0≦y≦1, 0≦z≦1; x, y, and z are not simultaneously 1; 0≦a≦1, 0≦b≦1, 0≦c≦1, and a+b+c=1; M4 is a group IV element (Si, Ge, or Zr) having an atomic number smaller than that of Sn; M3 is Lu or a group III element (B, Al, Ga, or Y) having an atomic number smaller than that of In; and M2 is a group II element (Mg or Ca) having an atomic number smaller than that of Zn).
  • [0013]
    In the present invention, the amorphous oxide according (5) above may further contain at least one element selected from group V elements (V, Nb, and Ta) M5 and W.
  • [0014]
    Another aspect of the present invention provides: (6) a thin film transistor including the amorphous oxide according to any one of (1) to (4) above, in which the amorphous oxide is a single compound represented by [(In1−yM3y)2O3(Zn1−xM2x)O]m (wherein 0≦x≦1; 0≦y≦1; x and y are not simultaneously 1; m is zero or a natural number less than 6; M3 is Lu or a group III element (B, Al, Ga, or Y) having an atomic number smaller than that of In; and M2 (Mg or Ca) is a group II element having an atomic number smaller than that of Zn) in a crystallized state or a mixture of the compounds with different values of m. M3 is, for example, Ga, and M2 is, for example Mg.
  • [0015]
    The present invention also provides the amorphous oxide according to any one of (1) to (6) above formed on a glass substrate, a metal substrate, a plastic substrate, or a plastic film. The present invention also provides a field effect transistor including a channel layer composed of the amorphous oxide described above. The field effect transistor of the present invention is characterized in that the gate insulating film is one of Al2O3, Y2O3, and HfO2 or a mixed crystal compound containing at least two of these compounds.
  • [0016]
    Another aspect of the present invention provides: (7) a transparent semi-insulating amorphous oxide thin film comprising In—Ga—Zn—O, in which the composition in a crystallized state is represented by InGaO3(ZnO)m (wherein m is a number less than 6 and 0<x≦1), the electron mobility is more than 1 cm2/(V·sec) and the electron carrier concentration is less than 1018/cm3.
  • [0017]
    Furthermore, the present invention also provides: (8) a transparent semi-insulating amorphous oxide thin film comprising In—Ga—Zn—Mg—O, in which the composition in a crystallized state is represented by InGaO3(Zn1−xMgxO)m (wherein m is a number less than 6 and 0<x≦1), the electron mobility is more than 1 cm2/(V·sec) and the electron carrier concentration is less than 1018/cm3. Moreover, the present invention also provides a method for forming the transparent semi-insulating amorphous oxide thin film in which an impurity ion for increasing the electrical resistance is not intentionally added and the deposition is conducted in an atmosphere containing oxygen gas.
  • [0018]
    A thin-film transistor according to another aspect of the present invention includes a source electrode, a drain electrode, a gate electrode a gate insulating film and a channel layer, in which the channel layer contains an amorphous oxide having an electron carrier concentration of less than 1018/cm3. Preferably, the electron carrier concentration of the amorphous oxide is 1017/cm3 or less or 1016/cm3 or less. The amorphous oxide is an oxide containing In, Ga, and Zn, in which the atomic ratio In:Ga:Zn is 1:1:m (m<6). Alternatively, the amorphous oxide is an oxide including In, Ga, Zn, and Mg, in which the atomic ratio In:Ga:Z1−xMgx is 1:1:m (m<6), wherein 0<x≦1.
  • [0019]
    The amorphous oxide is selected from InxGa1−x oxides (0≦x≦1), InxZn1−x oxides (0.2≦x≦1), InxSn1−x oxides (0.8≦x≦1), and Inx(Zn, Sn)1−x oxides (0.15≦x≦1).
  • [0020]
    In a thin film transistor of the present invention, a material in which the electron mobility increases with the electron carrier concentration can be used as the amorphous oxide.
  • [0021]
    According to the present invention, an amorphous oxide having a low electron carrier concentration can be provided, and a thin film transistor including a channel layer composed of such an amorphous oxide can be provided.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0022]
    FIG. 1 is a graph that shows the relationship between the oxygen partial pressure during the deposition and the electron carrier concentration of an In—Ga—Zn—O amorphous oxide deposited by a pulsed laser deposition method.
  • [0023]
    FIG. 2 is a graph that shows the relationship between the electron carrier concentration and electron mobility of an In—Ga—Zn—O amorphous oxide film formed by a pulsed laser deposition method.
  • [0024]
    FIG. 3 is a graph that shows the relationship between the oxygen partial pressure during the deposition and the electrical conductivity of an In—Ga—Zn—O amorphous oxide deposited by a high-frequency sputtering method.
  • [0025]
    FIG. 4 is a graph showing changes in electron conductivity, electron carrier concentration, and electron mobility of InGaO3(Zn1−xMgxO)4 deposited by pulsed laser deposition against x.
  • [0026]
    FIG. 5 is a schematic illustration showing a structure of a top gate TFT element.
  • [0027]
    FIG. 6 is a graph showing a current-voltage characteristic of a top gate TFT element.
  • [0028]
    FIG. 7 is a schematic illustration showing a pulsed layer deposition device.
  • [0029]
    FIG. 8 is a schematic illustration showing a sputter deposition device.
  • BEST MODE FOR CARRYING OUT THE INVENTION
  • [0030]
    An amorphous oxide of the present invention is characterized in that the electron carrier concentration is less than 1018/cm3. A thin film transistor (TFT) of the present invention is characterized in that an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer.
  • [0031]
    For example, as shown in FIG. 5, the TFT is made by forming a channel layer 2 on a substrate 1 and a gate insulating film 3, a gate electrode 4, a source electrode 6, and a drain electrode 5 on the channel layer 2. In this invention, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer.
  • [0032]
    The structure of the TFT to which the present invention can be applied is not limited to the staggered structure (top-gate structure) shown in FIG. 5 in which a gate insulating film and a gate terminal (electrode) are sequentially stacked on a semiconductor channel layer. For example, the TFT may have an inverted staggered structure (bottom-gate structure) in which a gate insulating film and a semiconductor channel layer are sequentially stacked on a gate terminal. The electron carrier concentration mentioned above is a value measured at room temperature. Room temperature is, for example, 25° C. and, in particular, is appropriately selected from the range of about 0° C. to about 40° C.
  • [0033]
    The electron carrier concentration of the amorphous oxide of the present invention need not be less than 1018/cm3 all through the range of 0° C. to 40° C. For example, it is sufficient if the carrier electron concentration is less than 1018/cm3 at 25° C. When the electron carrier concentration is reduced to 1017/cm3 or less and more preferably to 1016/cm3 or less, TFTs of a normally off type can be obtained in high yield. The electron carrier concentration can be determined by hall-effect measurement.
  • [0034]
    In the present invention, “amorphous oxide” is defined as an oxide that shows a halo pattern in an X-ray diffraction spectrum and exhibits no particular diffraction line. The lower limit of the electron carrier concentration of the amorphous oxide of the present invention is not particularly limited as long as the oxide can be used as the TFT channel layer. The lower limit is, for example, 1012/cm3.
  • [0035]
    Thus, in the present invention, the starting materials, composition ratio, production conditions, and the like of the amorphous oxide are controlled as in the individual examples described below so as to adjust the electron carrier concentration to 1012/cm3 or more but less than 1018/cm3. Preferably, the electron carrier concentration is adjusted to 1013/cm3 to 1017/cm3, and more preferably 1015/cm3 to 1016/cm3.
  • [0036]
    The electron mobility is preferably 0.1 cm2/(V·sec) or more, more preferably 1 cm2/(V·sec) or more, and most preferably 5 cm2/(V·sec) or more when measured at room temperature. The amorphous oxide exhibits increased electron mobility as the electron carrier concentration increases. The conductivity thereof tends to exhibit degenerate conduction. Degenerate conduction is defined as a state in which the thermal activation energy for temperature dependency of electrical resistance is 30 meV or less.
  • (Starting Materials for Amorphous Oxide)
  • [0037]
    The amorphous oxide of the present invention contains at least one element selected from Zn, In, and Sn as a constituent component and is represented by [(Sn1−xM4x)O2]a.[(In1−yM3y)2O3]b.[(Zn1−zM2z)O]c [0≦x≦1, 0≦y≦1, 0≦z≦1; x, y, and z are not simultaneously 1; 0≦a≦1, 0≦b≦1, 0≦c≦1, and a+b+c=1; M4 is a group IV element (Si, Ge, or Zr) having an atomic number smaller than that of Sn; M3 is Lu or a group III element (B, Al, Ga, or Y) having an atomic number smaller than that of In and M2 is a group II element (Mg or Ca) having an atomic number smaller than that of Zn. The amorphous oxide may further contain at least one element selected from group V elements M5 (V, Nb, and Ta) and W. In this description, the group II, III, IV, and V elements in the periodic table are sometimes referred to as group 2, 3, 4, and 5 elements, respectively; however, the meaning is the same.
  • [0038]
    The electron carrier concentration can be further decreased by adding at least one element that can form a compound oxide, the at least one element being selected from a group 2 element M2 (M2: Mg or Ca) having an atomic number smaller than that of Zn; Lu and a group 3 element M3 (M3: B, Al, Ga, or Y) having an atomic number smaller than that of In; a group 4 element M4 (M4: Si, Ge, or Zr) having an atomic number smaller than that of Sn; and a group 5 element M5 (M5: V, Nb, and Ta) or W.
  • [0039]
    The elements M2, M3, and M4 having atomic numbers smaller than those of Zn, In, and Sn, respectively, have higher ionicity than Zn, In and Sn; thus, generation of oxygen defects is less frequent, and the electron carrier concentration can be decreased. Although Lu has a larger atomic number than Ga, the ion radius is small and the ionicity is high, thereby achieving the same functions as those of M3. M5, which is ionized at a valency of 5, strongly bonds to oxygen and rarely causes oxygen defects. Tungsten (W), which is ionized at a valency of 6, strongly bonds to oxygen and rarely causes oxygen defects.
  • [0040]
    The amorphous oxide applicable to the present invention is a single compound having a composition in a crystallized state represented by [(In1−yM3y)2O3(Zn1−xM2x)O]m (wherein 0≦x≦1; 0≦y≦1; x and y are not simultaneously 1; m is zero or a number or a natural number less than 6; M3 is Lu or a group 3 element (B, Al, Ga, or Y) having an atomic number smaller than that of In; and M2 is a group 2 element (Mg or Ca) having an atomic number smaller than that of Zn] or a mixture of compounds with different values of m. M3 is, for example, Ga. M2 is, for example, Mg.
  • [0041]
    The amorphous oxide applicable to the present invention is a unitary, binary, or ternary compound within a triangle with apexes of SnO2, In2O3, and ZnO. Among these three compounds, In2O3 has high amorphous formation capacity and can form a completely amorphous phase when In2O3 is deposited by a vapor phase method while adding approximately 0.1 Pa of water into the atmosphere.
  • [0042]
    ZnO and SnO2 in some cases do not form an amorphous phase by themselves; however, they can form an amorphous phase in the presence of In2O3 as a host oxide. In particular, of binary compositions containing two of the above-described three compounds (compositions located on the side of the triangle), the In—Zn—O system can form an amorphous film when In is contained in an amount of about 20 at % or more, and the Sn—In—O system can form an amorphous film when In is contained in an amount of about 80 at % or more by a vapor phase method.
  • [0043]
    In order to obtain an In—Zn—O amorphous film by a vapor phase method, about 0.1 Pa of steam may be introduced into the atmosphere. In order to obtain an In—Sn—O-system amorphous film by a vapor phase method, about 0.1 Pa of nitrogen gas may be introduced into the atmosphere. For the ternary composition, Sn—In—Zn, containing the three compounds, an amorphous film can be obtained by a vapor phase method when In is contained in an amount of about 15 at % in the above-described composition range. Note that “at %” herein indicates atomic percent with respect to the metal ions other than oxygen ions. In particular, for example, “the In—Zn—O system containing about 20 at % or more of In” is equivalent to InxZn1−x (x>0.2).
  • [0044]
    The composition of the amorphous oxide film containing Sn, In, and/or Zn may contain additional elements as described below. In particular, at least one element that forms a compound oxide, the at least one element being selected from a group 2 element M2 (M2: Mg or Ca) having an atomic number smaller than that of Zn, Lu or a group 3 element M3 (M3: B, Al, Ga, or Y) having an atomic number smaller than that of In, and a group 4 element M4 (M4: Si, Ge, or Zr) having an atomic number smaller than that of Sn may be added. The amorphous oxide film of the present invention may further contain at least one element that can form a compound oxide, the at least one element being selected from group 5 elements (M5: V, Nb, and Ta) and W.
  • [0045]
    Addition of the above-described elements will increase the stability of the amorphous film and expands the composition range that can give an amorphous film. In particular, addition of highly covalent B, Si, or Ge is effective for stabilization of the amorphous phase, and a compound oxide composed of ions with largely different ion radii can stabilize the amorphous phase. For example, in the In—Zn—O system, a stable amorphous film is rarely obtained at room temperature unless the range of In content is more than about 20 at %. However, by adding Mg in an equivalent amount to In, a stable amorphous film can be obtained at an In content of more than about 15 at %.
  • [0046]
    An example of the amorphous oxide material that can be used in the channel layer of the TFT of the present invention is described next. The amorphous oxide that can be used in the channel layer is, for example, an oxide that contains In, Ga, and Zn at an atomic ratio satisfying In:Ga:Zn=1:1:m, wherein m is a value less than 6. The value of m may be a natural number but is not necessarily a natural number. This applies to “m” referred to in other sections of this description. The atomic ratio can be considered as equivalent to a molar ratio.
  • [0047]
    A transparent amorphous oxide thin film whose composition in a crystallized state is represented by InGaO3(ZnO)m (wherein m is a number less than 6) maintains a stable amorphous state at high temperatures not less than 800° C. when the value of m is less than 6. However, as the value of m increases, i.e., as the ratio of ZnO to InGaO3 increases and the composition approaches to the ZnO composition, the composition tends to be more crystallizable. Thus, the value of m is preferably less than 6 for the channel layer of the amorphous TFT. A desired amorphous oxide can be obtained by adjusting the composition of the target material (e.g., a polycrystalline material) for deposition, such as sputtering deposition or pulsed laser deposition (PLD), to comply with m<6.
  • [0048]
    In the amorphous oxide described above, Zn in the composition ratio of InGaZn may be replaced by Zn1−xMgx. The possible amount of Mg for replacement is within the range of 0<x≦1. When the replacement with Mg is conducted, the electron mobility of the oxide film decreases compared to a film containing no Mg. However, the extent of decrease is small, and the electron carrier concentration can be decreased compared to when no replacement is conducted. Thus, this is more preferable for the channel layer of a TFT. The amount of Mg for replacement is preferably more than 20% and less than 85% (0.2<x<0.85 in term of x) and more preferably 0.5<x<0.85.
  • [0049]
    The amorphous oxide may be appropriately selected from In oxides, InxZn1−x oxides (0.2≦x≦1), InxSn1−x oxides (0.8≦x≦1), and Inx(Zn, Sn)1−x oxides (0.15≦x≦1). The ratio of Zn to Sn in the Inx(Zn, Sn)1−x oxides may be appropriately selected. Namely, an Inx(Zn, Sn)1−x oxide can be described as Inx(ZnySn1−y)1−x oxide, and y is in the range of 1 to 0. For an In oxide containing neither Zn nor Sn, In may be partly replaced by Ga. In this case, the oxide can be described as an InxGa1−x oxide (0≦x≦1).
  • (Method for Producing Amorphous Oxide)
  • [0050]
    The amorphous oxide used in the present invention can be prepared by a vapor phase deposition technique under the conditions indicated in the individual examples below. For example, in order to obtain an InGaZn amorphous oxide, deposition is conducted by a vapor phase method such as a sputtering (SP) method, a pulsed laser deposition (PLD) method, or an electron beam deposition method while using a polycrystalline sinter represented by InGaO3(ZnO)m as the target. From the standpoint of mass productivity, the sputtering method is most suitable.
  • [0051]
    During the formation of an In2O3 or In—Zn—O amorphous oxide film or the like, oxygen radicals may be added to the atmosphere. Oxygen radicals may be added through an oxygen radical generator. When there is need to increase the electron carrier concentration after the film formation, the film is heated in a reducing atmosphere to increase the electron carrier concentration. The resulting amorphous oxide film with a different electron carrier concentration was analyzed to determine the dependency of the electron mobility on the electron carrier concentration, and the electron mobility increased with the electron carrier concentration.
  • (Substrate)
  • [0052]
    The substrate for forming the TFT of the present invention may be a glass substrate, a plastic substrate, a plastic film, or the like. Moreover, as described below in EXAMPLES, the amorphous oxide of the present invention can be formed into a film at room temperature. Thus, a TFT can be formed on a flexible material such as a PET film. Moreover, the above-mentioned amorphous oxide may be appropriately selected to prepare a TFT from a material that is transparent in visible light not less than 400 nm or infrared light.
  • (Gate Insulating Film)
  • [0053]
    The gate insulating film of the TFT of the present invention is preferably a gate insulating film composed of Al2O3, Y2O3, HfO2, or a mixed crystal compound containing at least two of these compounds. When there is a defect at the interface between the gate insulating thin film and the channel layer thin film, the electron mobility decreases and hysteresis occurs in the transistor characteristics. Moreover, leak current greatly differs according to the type of the gate insulating film. Therefore, a gate insulating film suitable for the channel layer must be selected.
  • [0054]
    Use of an Al2O3 film can decrease the leak current. Use of an Y2O3 film can reduce the hysteresis. Use of a high dielectric constant HfO2 film can increase the field effect mobility. By using a film composed of a mixed crystal of these compounds, a TFT having small leak current and hysteresis and large field effect mobility can be produced. the process for forming the gate insulating film and the process for forming the channel layer can be conducted at room temperature; thus, a TFT of a staggered or inverted staggered structure can be formed.
  • (Transistor)
  • [0055]
    When a field effect transistor includes a channel layer composed of an amorphous oxide film having an electron carrier concentration of less than 1018/cm3, a source terminal, a drain terminal, and a gate terminal disposed on the gate insulating film, the current between the source and drain terminals can be adjusted to about 10−7 A when a voltage of about 5V is applied between the source and drain terminals without application of a gate voltage. The theoretical lower limit of the electron carrier concentration is 105/cm3 or less assuming that the electrons in the valence band are thermally excited. The actual possibility is that the lower limit is about 1012/cm3.
  • [0056]
    When Al2O3, Y2O3, or HfO2 alone or a mixed crystal compound containing at least two of these compounds is used in the gate insulating layer, the leak voltage between the source gate terminals and the leak voltage between the drain and gate terminals can be adjusted to about 10−7 A, and a normally off transistor can be realized.
  • [0057]
    The electron mobility of the oxide crystals increases as the overlap of the s orbits of the metal ion increases. The oxide crystals of Zn, In, and Sn having large atomic numbers exhibit high electron mobility of 0.1 to 200 cm2/(V·sec). Since ionic bonds are formed between oxygen and metal ions in an oxide, electron mobility substantially comparable to that in a crystallized state can be exhibited in an amorphous state in which there is no directionality of chemical bonding, the structure is random, and the directions of the bonding are nonuniform. In contrast, by replacing Zn, In, and Sn each with an element having a smaller atomic number, the electron mobility can be decreased. Thus, by using the amorphous oxide described above, the electron mobility can be controlled within the range of about 0.01 cm2/(V·sec) to 20 cm2/(V·sec).
  • [0058]
    In a typical compound, the electron mobility decreases as the carrier concentration increases due to the dispersion between the carriers. In contrast, the amorphous oxide of the present invention exhibits increased electron mobility with the increasing electron carrier concentration. The physical principle that lies behind this phenomenon is not clearly identified.
  • [0059]
    Once a voltage is applied to the gate terminal, electrons are injected into the amorphous oxide channel layer, and current flows between the source and drain terminals, thereby allowing the part between the source and drain terminals to enter an ON state. According to the amorphous oxide film of the present invention, since the electron mobility increases with the electron carrier concentration, the current that flows when the transistor is turned ON can be further increased. In other words, the saturation current and the on/off ratio can be further increased. When the amorphous oxide film having high electron mobility is used as the channel layer of a TFT, the saturation current can be increased and the switching rate of the TFT can be increased, thereby achieving high-speed operation.
  • [0060]
    For example, when the electron mobility is about 0.01 cm2/(V·sec), the material can be used in a channel layer of a TFT for driving a liquid crystal display element. By using an amorphous oxide film having an electron mobility of about 0.1 cm2/(V·sec), a TFT that has performance comparable or superior to the TFT using an amorphous silicon film and that can drive a display element for moving images can be produced.
  • [0061]
    In order to realize a TFT that requires large current, e.g., for driving a current-driven organic light-emitting diode, the electron mobility is preferably more than 1 cm2/(V·sec). Note than when the amorphous oxide of the present invention that exhibits degenerate conduction is used in the channel layer, the current that flows at a high carrier concentration, i.e., the saturation current of the transistor, shows decreased dependency on temperature, and a TFT with superior temperature characteristics can be realized.
  • EXAMPLES Example 1 Preparation of Amorphous In—Ga—Zn—O Thin Film by PLD Method
  • [0062]
    A film was formed in a PLD device shown in FIG. 7. In the drawing, reference numeral 701 denotes a rotary pump (RP), 702 denotes a turbo molecular pump (TMP), 703 denotes a preparation chamber, 704 denotes en electron gun for RHEED, 705 denotes a substrate holder for rotating and vertically moving the substrate, 706 denotes a laser entrance window, 707 denotes a substrate, 708 denotes a target, 709 denotes a radical source, 710 denotes a gas inlet, 711 denotes a target holder for rotating and vertically moving the target, 712 denotes a by-pass line, 713 denotes a main line, 714 denotes a turbo molecular pump (TMP), 715 denotes a rotary pump (RP), 716 denotes a titanium getter pump, and 717 denotes a shutter. In the drawing, 718 denotes ionization gauge (IG), 719 denotes a Pirani gauge (PG), 720 denotes a Baratron gauge (BG), and 721 denotes a deposition chamber.
  • [0063]
    An In—Ga—Zn—O amorphous oxide semiconductor thin film was formed on a SiO2 glass substrate (#1737 produced by Corning) by a pulsed laser deposition method using a KrF excimer laser. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100° C.
  • [0064]
    An InGaO3(ZnO)4 sinter target (size: 20 mm in dia., 5 mm in thickness) was used as the polycrystalline target. This target was prepared by wet-mixing the starting materials, In2O3:Ga2O3:ZnO (each being a 4N reagent), in a solvent (ethanol), calcining (1000° C., 2 h) the resulting mixture, dry-milling the calcined mixture, and sintering the resulting mixture (1550° C., 2 h). The electrical conductivity of the target obtained was 90 (S/cm).
  • [0065]
    The ultimate vacuum of the deposition chamber was adjusted to 2×10−6 (Pa), and the oxygen partial pressure during the deposition was controlled to 6.5 (Pa) to form a film. The oxygen partial pressure inside the chamber 721 was 6.5 Pa, and the substrate temperature was 25° C. The distance between the target 708 and the substrate 707 for deposition was 30 (mm). The power of the KrF excimer laser entering from the entrance window 716 was in the range of 1.5 to 3 (mJ/cm2/pulse). The pulse width was 20 (nsec), the repetition frequency was 10 (Hz), and the beam spot diameter was 1×1 (mm square). A film was formed at a deposition rate of 7 (nm/min).
  • [0066]
    The resulting thin film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5°), but no clear diffraction peak was observed. Thus, the In—Ga—Zn—O thin film obtained was assumed to be amorphous. The X-ray reflectance was determined, and the pattern was analyzed. It was observed that the root mean square roughness (Rrms) of the thin film was about 0.5 nm, and the film thickness was about 120 nm. The results of the fluorescence X-ray showed that the metal composition ratio of the thin film was In:Ga:Zn=0.98:1.02:4. The electrical conductivity was less than about 10−2 S/cm. The electron carrier concentration and the electron mobility were presumably about 1016/cm3 or less and about 5 cm2/(V·sec), respectively.
  • [0067]
    Based on the analysis of the optical absorption spectrum, the energy width of the forbidden band of the amorphous thin film prepared was determined to be about 3 eV. Based on these values, it was found that the In—Ga—Zn—O thin film had an amorphous phase close to the composition of the crystals of InGaO3(ZnO)4, had fewer oxygen defects, and was a flat, transparent thin film with low electrical conductivity.
  • [0068]
    Specific description is now presented with reference to FIG. 1. FIG. 1 shows a change in electron carrier concentration of the oxide formed into a film against changes in oxygen partial pressure when an In—Ga—Zn—O transparent amorphous oxide thin film represented by InGaO3(ZnO)4 in an assumed crystal state is formed under the same conditions as in this EXAMPLE.
  • [0069]
    As shown in FIG. 1, the electron carrier concentration decreased to less than 1018/cm3 when the film was formed in an atmosphere at a high oxygen partial pressure of more than 4.5 Pa under the same conditions as this example. In this case, the temperature of the substrate was maintained substantially at room temperature without intentional heating. The substrate temperature is preferably less than 100° C. when a flexible plastic film is used as the substrate.
  • [0070]
    By further increasing the oxygen partial pressure, the electron carrier concentration was further decreased. For example, as shown in FIG. 1, the number of the electron carriers of the InGaO3(ZnO)4 thin film deposited at a substrate temperature of 25° C. and an oxygen partial pressure of 5 Pa decreased to 1016/cm3.
  • [0071]
    The thin film obtained had an electron mobility exceeding 1 cm2/(V·sec), as shown in FIG. 2. However, according to the pulsed laser deposition method of the present invention, the surface of the film deposited will have irregularities at an oxygen partial pressure of 6.5 Pa or more, and thus, the it is difficult to use the thin film as a channel layer of a TFT. Therefore, by using an In—Ga—Zn—O transparent amorphous oxide thin film having a composition of InGaO3(ZnO)m (m is less than 6) in a crystal state prepared by a pulsed laser deposition method in an atmosphere having an oxygen partial pressure exceeding 4.5 Pa, preferably exceeding 5 Pa, but less than 6.5 Pa, a normally off transistor can be prepared.
  • [0072]
    The electron mobility of this thin film was more than 1 cm2/(V·sec), and the on/off ratio thereof was increased to over 103. As is described above, in forming an InGaZn oxide film by a PLD method under the conditions set forth in this example, the oxygen partial pressure is preferably controlled to not less than 4.5 Pa but less than 6.5 Pa. Whether an electron carrier concentration of 1018/cm3 is realized depends on the conditions of the oxygen partial pressure, the configuration of the deposition device, the materials for deposition, the composition, and the like.
  • Example 2 Formation of Amorphous InGaO3(ZnO) and InGaO3(ZnO)4 Oxide Films by PLD Method
  • [0073]
    In—Zn—Ga—O amorphous oxide films were deposited on glass substrates (#1737 produced by Corning) by using polycrystalline sinters represented by InGaO3(ZnO) and InGaO3(ZnO)4 as the targets by a PLD method using KrF excimer laser. The same PLD deposition device as shown in EXAMPLE 1 was used, and the deposition was conducted under the same conditions. The substrate temperature during the deposition was 25° C.
  • [0074]
    Each film obtained thereby was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5°) for the film surface. No clear diffraction peak was detected. The In—Zn—Ga—O films prepared from the two targets were both amorphous.
  • [0075]
    The In—Zn—Ga—O amorphous oxide films on the glass substrates were each analyzed to determine the x-ray reflectance. Analysis of the pattern found that the root mean average roughness (Rrms) of the thin film was about 0.5 mm and that the thickness was about 120 nm. Fluorescence x-ray analysis (XRF) showed that the ratio of the metal atoms of the film obtained from the target composed of the polycrystalline sinter represented by InGaO3(ZnO) was In:Ga:Zn=1.1:1.1:0.9 and that the ratio of the metal atoms of the film obtained from the target composed of the polycrystalline sinter represented by InGaO3(ZnO)4 was In:Ga:Zn=0.98:1.02:4.
  • [0076]
    The electron carrier concentration of the amorphous oxide film obtained from the target composed of the polycrystalline sinter represented by InGaO3(ZnO)4 was measured while changing the oxygen partial pressure of the atmosphere during the deposition. The results are shown in FIG. 1. By forming the film in the atmosphere having an oxygen partial pressure exceeding 4.5 Pa, the electron carrier concentration could be decreased to less than 1018/cm3. In this case, the temperature of the substrate was maintained substantially at room temperature without intentional heating. When the oxygen partial pressure was less than 6.5 Pa, the surface of the amorphous oxide film obtained was flat.
  • [0077]
    When the oxygen partial pressure was 5 Pa, the electron carrier concentration and the electrical conductivity of the amorphous oxide film obtained from the target composed of the polycrystalline sinter represented by InGaO3(ZnO)4 were 1016/cm3 and 10−2 S/cm, respectively. The electron mobility was presumably about 5 cm2/(V·sec). Based on the analysis of the optical absorption spectrum, the energy width of the forbidden band of the amorphous thin film prepared was determined to be about 3 eV. The electron carrier concentration could be further decreased as the oxygen partial pressure was increased from 5 Pa.
  • [0078]
    As shown in FIG. 1, the In—Zn—Ga—O amorphous oxide film deposited at a substrate temperature of 25° C. and an oxygen partial pressure of 6 Pa exhibited a decreased electron carrier concentration of 8×1015/cm3 (electrical conductivity: about 8×10−3 S/cm). The resulting film was assumed to have an electron mobility of more than 1 cm2/(V·sec). However, according to the PLD method, irregularities were formed in the surface of the film deposited at an oxygen partial pressure of 6.5 Pa or more, and thus it was difficult to use the film as the channel layer of the TFT.
  • [0079]
    The relationship between the electron carrier concentration and the electron mobility of the In—Zn—Ga—O amorphous oxide film prepared from the target composed of the polycrystalline sinter represented by InGaO3(ZnO)4 at different oxygen partial pressures was investigated. The results are shown in Table 2. When the electron carrier concentration increased from 1016/cm3 to 1020/cm3, the electron mobility increased from about 3 cm2/(V·sec) to about 11 cm2/(V·sec). The same tendency was observed for the amorphous oxide film prepared from the target composed of the polycrystalline sinter represented by InGaO3(ZnO).
  • [0080]
    An In—Zn—Ga—O amorphous oxide film formed on a polyethylene terephthalate (PET) film having a thickness of 200 μm instead of the glass substrate also showed similar characteristics.
  • Example 3 Formation of In—Zn—Ga—O Amorphous Oxide Film by SP Method
  • [0081]
    Formation of a film by a high-frequency SP method using argon gas as the atmosphere gas is described. The SP method was conducted using the device shown in FIG. 8. In the drawing, reference numeral 807 denotes a substrate for deposition, 808 denotes a target, 805 denotes a substrate holder equipped with a cooling mechanism, 814 denotes a turbo molecular pump, 815 denotes a rotary pump, 817 denotes a shutter, 818 denotes an ionization gauge, 819 denotes a Pirani gauge, 821 denotes a deposition chamber, and 830 denotes a gate valve. A SiO2 glass substrate (#1737 produced by Corning) was used as the substrate 807 for deposition. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100° C.
  • [0082]
    An InGaO3(ZnO)4 polycrystalline sinter (size: 20 mm in dia., 5 mm in thickness) was used as the target material. The sinter was prepared by wet-mixing the starting materials, In2O3:Ga2O3:ZnO (each being a 4N reagent), in a solvent (ethanol), calcining (1000° C., 2 h) the resulting mixture, dry-milling the calcined mixture, and sintering the resulting mixture (1550° C., 2 h). The target 808 had an electrical conductivity of 90 (S/cm) and was in a semi-insulating state.
  • [0083]
    The ultimate vacuum inside the deposition chamber 821 was 1×10−4 (Pa). The total pressure of the oxygen gas and the argon gas during the deposition was controlled at a predetermined value within the range of 4 to 0.1×10−1 (Pa), and the oxygen partial pressure was changed in the range of 10−3 to 2×10−1 (Pa) by changing the partial pressure ratio of the argon gas and oxygen. The substrate temperature was room temperature, and the distance between the target 808 and the substrate 807 for deposition was 30 (mm). The current injected was RF 180 W, and the deposition rate was 10 (nm/min).
  • [0084]
    The resulting film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle=0.5°) for the film surface, but no clear diffraction peak was observed. Thus, the In—Zn—Ga—O thin film obtained was proved to be amorphous. The X-ray reflectance was determined, and the pattern was analyzed. It was observed that the root mean square roughness (Rrms) of the thin film was about 0.5 nm, and the film thickness was about 120 nm. The results of the fluorescence X-ray showed that the metal composition ratio of the thin film was In:Ga:Zn=0.98:1.02:4.
  • [0085]
    The electrical conductivity of the amorphous oxide film obtained by changing the oxygen partial pressure in the atmosphere during the deposition was measured. The results are shown in FIG. 3. As shown in FIG. 3, the electrical conductivity could be decreased to less than 10 S/cm by forming the film in an atmosphere at a high oxygen partial pressure exceeding 3×10−2 Pa.
  • [0086]
    By further increasing the oxygen partial pressure, the number of electron carriers could be decreased. For example, as shown in FIG. 3, the electrical conductivity of an InGaO3(ZnO)4 thin film deposited at a substrate temperature of 25° C. and an oxygen partial pressure of 10−1 Pa was decreased to about 10−10 S/cm. An InGaO3(ZnO)4 thin film deposited at an oxygen partial pressure exceeding 10−1 Pa had excessively high electrical resistance and thus the electrical conductivity thereof could not be measured. However, extrapolation was conducted for the value observed from a film having a high electron carrier concentration, and the electron mobility was assumed to be about 1 cm2/(V·sec).
  • [0087]
    In short, a normally off transistor having an on/off ratio exceeding 103 could be made by using a transparent amorphous oxide thin film which was composed of In—Ga—Zn—O prepared by a sputter deposition method in argon gas atmosphere at an oxygen partial pressure more than 3×10−2 Pa, preferably more than 5×10−1 Pa, and which was represented by InGaO3(ZnO)4 (m is a natural number less than 6) in a crystallized state.
  • [0088]
    When the device and starting materials set forth in this example are used, the oxygen partial pressure during the sputter deposition is, for example, in the range of 3×10−2 Pa to 5×10−1 Pa. The electron mobility of the thin films prepared by the pulsed laser deposition method and the sputtering method increases with the number of the conduction electrons, as shown in FIG. 2.
  • [0089]
    As described above, by controlling the oxygen partial pressure, oxygen defects can be reduced, and therefore the electron carrier concentration can be reduced. Unlike in the polycrystalline state, in the amorphous state, there is essentially no grain interface; therefore, an amorphous thin film with high electron mobility can be obtained. Note that when a polyethylene terephthalate (PET) film having a thickness of 200 μm was used instead of the glass substrate, the resulting InGaO3(ZnO)4 amorphous oxide thin film exhibited similar characteristics.
  • Example 4 Formation of In—Zn—Ga—Mg—O Amorphous Oxide Film by PLD Method
  • [0090]
    Formation of an InGaO3(Zn1−xMgxO)4 film (0<x<1) on a glass substrate by a PLD method is described. The same deposition device shown in FIG. 7 was used as the deposition device. A SiO2 glass substrate (#1737 produced by Corning) was prepared as the substrate for deposition. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100° C.
  • [0091]
    An InGa(Zn1−xMgxO)4 (0<x<1) sinter (size: 20 mm in dia., 5 mm in thickness) was used as the target. The target was prepared by wet-mixing the starting materials, In2O3:Ga2O3:ZnO:MgO (each being a 4N reagent), in a solvent (ethanol), calcining (1000° C., 2 h) the resulting mixture, dry-milling the calcined mixture, and sintering the resulting mixture (1550° C., 2 h).
  • [0092]
    The ultimate vacuum inside the deposition chamber was 2×10−6 (Pa), and the oxygen partial pressure during the deposition was 0.8 (Pa). The substrate temperature was room temperature (25° C.), and the distance between the target and the substrate for deposition was 30 (mm). The power of the KrF excimer laser was 1.5 (mJ/cm2/pulse), the pulse width was 20 (nsec), the repetition frequency was 10 (Hz), and the beam spot diameter was 1×1 (mm square). The deposition rate was 7 (nm/min).
  • [0093]
    The resulting film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5°) for the film surface, but no clear diffraction peak was observed. Thus, the In—Zn—Ga—Mg—O thin film obtained was proved to be amorphous. The surface of the resulting film was flat.
  • [0094]
    The dependency on the value x of the electrical conductivity, electron carrier concentration, and electron mobility of In—Zn—Ga—Mg—O amorphous oxide films deposited in atmosphere at an oxygen partial pressure of 0.8 Pa was investigated by using targets of different x values. Note that a high-resistance amorphous InGaO3(Zn1−xMgxO)m film could be obtained at an oxygen partial pressure of less than 1 Pa as long as the polycrystalline InGaO3(Zn1−xMgxO)m (m is a natural number less than 6; 0<x≦1) was used as the target.
  • [0095]
    The results are shown in FIG. 4. The results showed that the electron carrier concentration of an amorphous oxide film deposited by a PLD method in an atmosphere at an oxygen partial pressure of 0.8 Pa could be reduced to less than 1018/cm3 when the value x was more than 0.4. The electron mobility of the amorphous oxide film with x exceeding 0.4 was more than 1 cm2/(V·sec). As shown in FIG. 4, when a target in which Zn was substituted with 80 at % Mg was used, the electron carrier concentration of the film obtained by the pulsed laser deposition method in an atmosphere at an oxygen partial pressure of 0.8 Pa could be reduced to less than 1016/cm3.
  • [0096]
    Although the electron mobility of these films is low compared to that of Mg-free films, the degree of decrease is small, while the electron mobility at room temperature is about 5 cm2/(V·sec), i.e., higher than that of amorphous silicon by one order of magnitude. When deposition is conducted under the same conditions, the electrical conductivity and the electron mobility both decrease with an increase in Mg content. Thus, the Mg content is preferably more than 20 at % but less than 85 at % (0.2<x<0.85 in terms of x), and more preferably 0.5<x<0.85.
  • [0097]
    An InGaO3(Zn1−xMgxO)4 (0<x<1) amorphous oxide film formed on a polyethylene terephthalate (PET) film having a thickness of 200 μm instead of the glass substrate also showed similar characteristics.
  • Example 5 Formation of In2O3 Amorphous Oxide Film by PLD
  • [0098]
    Formation of an indium oxide film is now described. The deposition device shown in FIG. 7 was used as the deposition device. A SiO2 glass substrate (#1737 produced by Corning) was prepared as the substrate for deposition. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100° C.
  • [0099]
    An In2O3 sinter (size: 20 mm in dia., 5 mm in thickness) was used as the target. The target was prepared by calcining the starting material In2O3 (a 4N reagent) (1000° C., 2 h), dry milling the calcined material, and sintering the resulting material (1550° C., 2 h).
  • [0100]
    The ultimate vacuum inside the deposition chamber was 2×10−6 (Pa), and the oxygen partial pressure during the deposition was 5 (Pa). The steam partial pressure was 0.1 (Pa), and 200 W was applied to the oxygen radical generator to produce oxygen radicals. The substrate temperature was room temperature. The distance between the target and the substrate for deposition was 40 (mm). The power of the KrF excimer laser was 0.5 (mJ/cm2/pulse), the pulse width was 20 (nsec), the repetition frequency was 10 (Hz), and the beam spot diameter was 1×1 (mm square). The deposition rate was 3 (nm/min).
  • [0101]
    The resulting film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5°) for the film surface, but no clear diffraction peak was observed. Thus, the In—O thin film obtained was proved to be amorphous. The film thickness was 80 nm. The electron carrier concentration and the electron mobility of the In—O amorphous oxide film obtained were 5×1017/cm3 and about 7 cm2/(V·sec), respectively.
  • Example 6 Formation of In—Sn—O Amorphous Oxide Film by PLD
  • [0102]
    Deposition of an In—Sn—O amorphous oxide film having a thickness of 200 μm by a PLD method is described. A SiO2 glass substrate (#1737 produced by Corning) was prepared as the substrate for deposition. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100° C.
  • [0103]
    An In2O3—SnO2 sinter (size: 20 mm in dia., 5 mm in thickness) was prepared as the target by wet-mixing the starting materials, In2O3—SnO2 (a 4N reagent), in a solvent (ethanol), calcining the resulting mixture (1000° C., 2 h), dry milling the calcined mixture, and sintering the resulting mixture (1550° C., 2 h). The composition of the target was (In0.9Sn0.1)2O3.1 polycrystal.
  • [0104]
    The ultimate vacuum inside the deposition chamber was 2×10−6 (Pa), the oxygen partial pressure during the deposition was 5 (Pa), and the nitrogen partial pressure was 0.1 (Pa). Then 200 W is applied to the oxygen radical generator to produce oxygen radicals. The substrate temperature during the deposition was room temperature. The distance between the target and the substrate for deposition was 30 (mm). The power of the KrF excimer laser was 1.5 (mJ/cm2/pulse), the pulse width was 20 (nsec), the repetition frequency was 10 (Hz), and the beam spot diameter was 1×1 (mm square).
  • [0105]
    The deposition rate was 6 (nm/min). The resulting film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5°) for the film surface, but no clear diffraction peak was observed. Thus, the In—Sn—O thin film obtained was proved to be amorphous. The electron carrier concentration and the electron mobility of the In—Sn—O amorphous oxide film obtained were 8×1017/cm3 and about 5 cm2/(V·sec), respectively. The film thickness was 100 nm.
  • Example 7 Formation of In—Ga—O Amorphous Oxide Film by PLD Method
  • [0106]
    Deposition of an indium gallium oxide is described next. A SiO2 glass substrate (#1737 produced by Corning) was prepared as the substrate for deposition. As the pre-deposition treatment, the substrate was degreased with ultrasonic waves in acetone, ethanol, and ultrapure water for 5 minutes each, and then dried in air at 100° C.
  • [0107]
    A (In2O3)1−x—(Ga2O3)x (x=0 to 1) sinter was prepared as the target (size: 20 mm in dia., 5 mm in thickness). For example, when x=0.1, the target was an (In0.9Ga0.1)2O3 polycrystalline sinter. This target was obtained by wet-mixing the starting materials, In2O3—Ga2O3 (4N reagent), in a solvent (ethanol), calcining the resulting mixture (1000° C., 2 h), dry-milling the calcined mixture, and sintering the resulting mixture (1550° C., 2 h).
  • [0108]
    The ultimate vacuum inside the deposition chamber was 2×10−6 (Pa), and the oxygen partial pressure during the deposition was 1 (Pa). The substrate temperature during the deposition was room temperature. The distance between the target and the substrate for deposition was 30 (mm). The power of the KrF excimer laser was 1.5 (mJ/cm2/pulse), the pulse width was 20 (nsec), the repetition frequency was 10 (Hz), and the beam spot diameter was 1×1 (mm square). The deposition rate was 6 (nm/min).
  • [0109]
    The resulting film was subjected to grazing incidence x-ray diffraction (thin film method, incident angle: 0.5°) for the film surface, but no clear diffraction peak was observed. Thus, the In—Ga—O thin film obtained was proved to be amorphous. The film thickness was 120 nm. The electron carrier concentration and the electron mobility of the In—Ga—O amorphous oxide film obtained were 8×1016/cm3 and about 1 cm2/(V·sec), respectively.
  • Example 8 Preparation of TFT Element (Glass Substrate) Using In—Zn—Ga—O Amorphous Oxide Film
  • [0110]
    A top-gate TFT element shown in FIG. 5 was prepared. First, an In—Zn—Ga—O amorphous film 120 nm in thickness for use as a channel layer (2) was formed on a glass substrate (1) by a method of preparing the In—Ga—Zn—O amorphous oxide film according to EXAMPLE 1 at an oxygen partial pressure of 5 Pa while using a polycrystalline sinter represented by InGaO3(ZnO)4 as the target.
  • [0111]
    An In—Ga—Zn—O amorphous film having high electrical conductivity and a gold film each 30 nm in thickness were deposited on the In—Ga—Zn—O amorphous film by a PLD method while controlling the oxygen partial pressure inside the chamber to less than 1 Pa, and a drain terminal (5) and a source terminal (6) were formed by a photolithographic method and a lift-off method.
  • [0112]
    Lastly, an Y2O3 film (thickness: 90 nm, relative dielectric constant: about 15, leak current density: 10−3 A/cm2 upon application of 0.5 MV/cm) for use as a gate insulating film (3) was formed by an electron beam deposition method, and gold was deposited on the Y2O3 film. A gate terminal (4) was formed by a photolithographic method and a lift-off method. The channel length was 50 μm and the channel width was 200 μm.
  • (Evaluation of Characteristics of TFT Element)
  • [0113]
    FIG. 6 shows the current-voltage characteristic of the TFT element measured at room temperature. Since the drain current IDS increased with the drain voltage VDS, the channel was found to be of an n-conductivity type. This is consistent with the fact that the amorphous In—Ga—Zn—O oxide film is an n-type conductor. IDS was saturated (pinch-off) at about VDS=6 V, which was a typical behavior for semiconductor transistors. The gain characteristic was determined, and the threshold value of the gate voltage VGS when VDS=4 V was applied was about −0.5 V. Upon application of VGs=6 V and VDS=10 V, current of IDS=1.0×10−5 A flowed. This is because carriers were induced in the In—Ga—Zn—O amorphous semiconductor thin film, i.e., an insulator, due to the gate bias. The on/off ratio of the transistor exceeded 103. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 7 cm2(Vs)−1 was obtained in the saturation region.
  • [0114]
    The same measurements were carried out on the element while irradiating the element with visible light, but no change in transistor characteristics was observed. Note that the film can be used as a channel layer of a TFT by controlling the electron carrier concentration of the amorphous oxide to less than 1018/cm3. An electron carrier concentration of 1017/cm3 or less was more preferable, and an electron carrier density of 1016/cm3 or less was yet more preferable.
  • [0115]
    According to this example, a tin film transistor having a channel layer with an increased electron carrier concentration, a high electrical resistance, and high electron mobility can be realized. The amorphous oxide described above exhibited excellent characteristics such as increased electron mobility with increasing electron carrier concentration and degenerate conduction.
  • [0116]
    In this example, the thin film transistor is formed on a glass substrate; however, since the film formation can be conducted at room temperature, a substrate such as a plastic board or a film can be used. Moreover, the amorphous oxide obtained in this example hardly absorbs visible light, and thus a transparent flexible TFT can be realized.
  • Example 9 Preparation of TFT Element Using In—Zn—Ga—O Amorphous Oxide Film
  • [0117]
    A top-gate TFT element shown in FIG. 5 was prepared. In particular, an In—Zn—Ga—O amorphous oxide film 120 nm in thickness for use as a channel layer (2) was formed on a polyethylene terephthalate (PET) film (1) by a deposition method of EXAMPLE 2 in an atmosphere at an oxygen partial pressure of 5 Pa using a polycrystalline sinter represented by InGaO3(ZnO) as the target.
  • [0118]
    An In—Zn—Ga—O amorphous oxide film having high electrical conductivity and a gold film each 30 nm in thickness were deposited on the In—Zn—Ga—O amorphous oxide film by the PLD method at an oxygen partial pressure inside the chamber of less than 1 Pa, and a drain terminal (5) and a source terminal (6) were formed by a photolithographic method and a lift-off method.
  • [0119]
    Lastly, a gate insulating film (3) was formed by an electron beam deposition method and gold is deposited thereon. A gate terminal (4) was then formed by a photolithographic method and a lift-off method. The channel length was 50 μm and the channel width was 200 μm. Three types of TFTs with the above-described structure were prepared using Y2O3 (thickness: 140 nm), Al2O3 (thickness: 130 nm) and HfO2 (thickness: 140 nm), respectively.
  • (Evaluation of Characteristics of TFT Element)
  • [0120]
    The current-voltage characteristic of the TFT element measured at room temperature was similar to one shown in FIG. 6. Namely, since the drain current IDS increased with the drain voltage VDS, the channel was found to be of an n-conductivity type. This is consistent with the fact that the amorphous In—Ga—Zn—O amorphous oxide film is an n-type conductor. IDS was saturated (pinch-off) at VDS=about 6 V, which was a typical behavior for semiconductor transistors. When VGS=6 V and VDS=10 V, current of Ids=1×10−5 A flowed. This is because carriers were induced in the In—Ga—Zn—O amorphous oxide thin film, i.e., an insulator, due to the gate bias. The on/off ratio of the transistor exceeded 103. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 7 cm2(Vs)−1 was obtained in the saturation region.
  • [0121]
    The element formed on the PET film was inflected at a radius of curvature of 30 mm, and the same transistor characteristic was measured. No change in transistor characteristic was observed.
  • [0122]
    The TFT including the gate insulating film made from the Al2O3 film also showed similar transistor characteristics to those shown in FIG. 6. When VGS=6 V and VDS=0, current of Ids=10−8 A flowed, and when VDS=10 V, current of Ids=5.0×10−6 A flowed. The on/off ratio of the transistor exceeded 102. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 2 cm2(Vs)−1 was obtained in the saturation region.
  • [0123]
    The TFT including the gate insulating film made from the HfO2 film also showed similar transistor characteristics to those shown in FIG. 6. When Vg=0 V, current of Ids=10−8 A flowed, and when Vg=10 V, current of Ids=1.0×10−6 A flowed. The on/off ratio of the transistor exceeded 102. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 10 cm2(Vs)−1 was obtained in the saturation region.
  • Example 10 Preparation of TFT Element Using In2O3 Amorphous Oxide Film by PLD Method
  • [0124]
    A top-gate TFT element shown in FIG. 5 was prepared. First, an In2O3 amorphous oxide film 80 nm in thickness for use as a channel layer (2) was formed on a polyethylene terephthalate (PET) film (1) by the deposition method of EXAMPLE 5.
  • [0125]
    An In2O3 amorphous oxide film having high electrical conductivity and a gold layer each 30 nm in thickness were formed on this In2O3 amorphous oxide film by the PLD method at an oxygen partial pressure inside the chamber of less than 1 Pa while applying zero voltage to the oxygen radical generator. A drain terminal (5) and a source terminal (6) were then formed by a photolithographic method and a lift-off method.
  • [0126]
    Lastly, an Y2O3 film for use as a gate insulating film (3) was formed by an electron beam deposition method, and gold was deposited on the Y2O3 film. A gate terminal (4) was formed by a photolithographic method and a lift-off method.
  • (Evaluation of Characteristics of TFT Element)
  • [0127]
    The current-voltage characteristics of the TFT element formed on the PET film were measured at room temperature. Since the drain current IDS increased with the drain voltage VDS, the channel was found to be of an n-conductivity type. This is consistent with the fact that the amorphous In—O amorphous oxide film is an n-type conductor. IDS was saturated (pinch-off) at VDS=about 5 V, which was a typical behavior for semiconductor transistors. When VGS=6 V and VDS=0, current of Ids=2×10−8 A flowed, and when VDS=10 V current of Ids=2.0×10−6 A flowed. This is because carriers were induced in the In—O amorphous oxide thin film, i.e., an insulator, due to the gate bias. The on/off ratio of the transistor was about 102. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 10 cm2(Vs)−1 was obtained in the saturation region.
  • [0128]
    The TFT element formed on a glass substrate showed similar characteristics. The element formed on the PET film was inflected at a radius of curvature of 30 mm, and the same transistor characteristics were measured. No change in transistor characteristics was observed.
  • Example 11 Preparation of TFT Element Using In—Sn—O Amorphous Oxide Film by PLD Method
  • [0129]
    A top gate TFT element shown in FIG. 5 was prepared. In particular, an In—Sn—O amorphous oxide film 100 nm in thickness for use as a channel layer (2) was formed on a polyethylene terephthalate (PET) film (1) by a deposition method of EXAMPLE 6.
  • [0130]
    An In—Sn—O amorphous oxide film having high electrical conductivity and a gold film each 30 nm in thickness were deposited on this In—Sn—O amorphous oxide film by the PLD method at an oxygen partial pressure inside the chamber of less than 1 Pa while applying zero voltage to the oxygen radical generator. A drain terminal (5) and a source terminal (6) were formed by a photolithographic method and a lift-off method.
  • [0131]
    Lastly, an Y2O3 film for use as a gate insulating film (3) was formed by an electron beam deposition method and gold was deposited thereon. A gate terminal (4) was then formed by a photolithographic method and a lift-off method.
  • (Evaluation of Characteristics of TFT Element)
  • [0132]
    The current-voltage characteristic of the TFT element formed on the PET film was measured at room temperature. Since the drain current IDS increased with the drain voltage VDS, the channel was found to be of an n-conductivity type. This is consistent with the fact that the amorphous In—Sn—O amorphous oxide film is an n-type conductor. IDS was saturated (pinch-off) at VDS=about 6 V, which was a typical behavior for semiconductor transistors. When VGS=6 V and VDS=0 V, current of Ids=5×10−8 A flowed, and when VDS=10 V, current of Ids=5.0×10−5 A flowed. This is because carriers were induced in the In—Sn—O amorphous oxide thin film, i.e., an insulator, due to the gate bias. The on/off ratio of the transistor was about 103. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 5 cm2(Vs)−1 was obtained in the saturation region.
  • [0133]
    The TFT element formed on a glass substrate showed similar characteristics. The element formed on the PET film was inflected at a radius of curvature of 30 mm, and the same transistor characteristics were measured. No change in transistor characteristics was observed.
  • Example 12 Preparation of TFT Element Using In—Ga—O Amorphous Oxide Film by PLD Method
  • [0134]
    A top gate TFT element shown in FIG. 5 was prepared. In particular, an In—Ga—O amorphous oxide film 120 nm in thickness for use as a channel layer (2) was formed on a polyethylene terephthalate (PET) film (1) by the deposition method of EXAMPLE 7.
  • [0135]
    An In—Ga—O amorphous oxide film having high electrical conductivity and a gold film each 30 nm in thickness were formed on this In—Ga—O amorphous oxide film by the PLD method at an oxygen partial pressure inside the chamber of less than 1 Pa while applying zero voltage to the oxygen radical generator. A drain terminal (5) and a source terminal (6) were formed by a photolithographic method and a lift-off method.
  • [0136]
    Lastly, an Y2O3 film for use as a gate insulating film (3) was formed by an electron beam deposition method and gold was deposited thereon. A gate terminal (4) was then formed by a photolithographic method and a lift-off method.
  • (Evaluation of Characteristics of TFT Element)
  • [0137]
    The current-voltage characteristic of the TFT element formed on the PET film was measured at room temperature. Since the drain current IDS increased with the drain voltage VDS, the channel was found to be of an n-conductivity type. This is consistent with the fact that the amorphous In—Ga—O amorphous oxide film is an n-type conductor. IDS was saturated (pinch-off) at VDS=about 6 V, which was a typical behavior for semiconductor transistors. When VGS=6V and VDS=0 V, current of Ids=1×10−8 A flowed, and when VDS=10 V, current of Ids=1.0×10−6 A flowed. This corresponds to the induction of electron carriers inside the insulator, In—Ga—O amorphous oxide film by the gate bias. The on/off ratio of the transistor was about 102. The field effect mobility was determined from the output characteristics. As a result, a field effect mobility of about 0.8 cm2(Vs)−1 was obtained in the saturation region.
  • [0138]
    The TFT element formed on a glass substrate showed similar characteristics. The element formed on the PET film was inflected at a radius of curvature of 30 mm, and the same transistor characteristics were measured. No change in transistor characteristics was observed.
  • [0139]
    It should be noted that, as described in EXAMPLES above, the film can be used as a channel layer of a TFT by controlling the electron carrier concentration to less than 1018/cm3. The electron carrier concentration is more preferably 1017/cm3 or less and yet more preferably 1016/cm3 or less.
  • INDUSTRIAL APPLICABILITY
  • [0140]
    The amorphous oxide of the present invention can be used in semiconductor devices such as thin film transistors. The thin film transistors can be used as switching elements of LCDs and organic EL displays and are also widely applicable to see-through-type displays, IC cards, ID tags, etc.

Claims (5)

1. A method of forming a transparent semi-insulating amorphous oxide film, comprising:
depositing a film on a substrate by a vapor-phase growth deposition method using a target of polycrystal of a compound represented by [(Sn1−xM4x)O2]a.[In1−yM3y)2O3]b.[(Zn1−zM2z)O]c,
wherein 0≦x≦1, 0≦y≦1, 0≦z≦1; x, y, and z are not simultaneously 1;
0≦a≦1, 0≦b≦1, 0≦c≦1, and a+b+c=1;
M4 is one or more selected from Si, Ge, and Zr;
M3 is one or more selected form B, Al, Ga, Y and Lu; and
M2 is one or more selected form Mg and Ca,
wherein temperature of the substrate is not intentionally heated, and impurity ions to increase electrical resistance are not intentionally added in the amorphous oxide film, and
atmosphere contains oxygen, oxygen partial pressure being controlled,
electron mobility is 1 cm2/(V·sec) or more and the electron carrier concentration is 1016/cm3 or less.
2. The method of forming a transparent semi-insulating amorphous oxide thin film according to claim 1, wherein the substrate is one of a glass plate, a plastic plate or a plastic film.
3. The method of forming a transparent semi-insulating amorphous oxide thin film according to claim 1, wherein the vapor-phase growth deposition method is either a pulse laser deposition method or a sputtering method.
4. The method of forming a transparent semi-insulating amorphous oxide thin film according to claim 1, wherein the compound is In—Ga—Zn—O, the vapor-phase growth deposition method is a pulse laser deposition method and the oxygen partial pressure of over 4.5 Pa.
5. The method of forming a transparent semi-insulating amorphous oxide thin film according to claim 1, wherein the compound is In—Ga—Zn—O, the vapor-phase growth deposition method is a high frequency sputtering method and the oxygen partial pressure of over 3×10−2 Pa.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070254456A1 (en) * 2006-04-28 2007-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20080283842A1 (en) * 2007-05-18 2008-11-20 Sony Corporation Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method
US20090090914A1 (en) * 2005-11-18 2009-04-09 Koki Yano Semiconductor thin film, method for producing the same, and thin film transistor
US20090160741A1 (en) * 2006-04-13 2009-06-25 Kazuyoshi Inoue Electro-optic device, and tft substrate for current control and method for manufacturing the same
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US20100099216A1 (en) * 2008-10-22 2010-04-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100117076A1 (en) * 2008-11-07 2010-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
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US20100117073A1 (en) * 2008-11-07 2010-05-13 Shunpei Yamazaki Semiconductor device and method for manufacturing the same
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US20100193783A1 (en) * 2009-01-30 2010-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100201661A1 (en) * 2005-04-28 2010-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Display Device
US20100210069A1 (en) * 2009-02-13 2010-08-19 Seon Jong-Baek Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition
US20100207118A1 (en) * 2009-02-13 2010-08-19 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device
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US20100258793A1 (en) * 2009-04-09 2010-10-14 Seon Jong-Baek Solution composition for forming oxide thin film and electronic device including the oxide thin film
US20100279474A1 (en) * 2009-05-01 2010-11-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20100307774A1 (en) * 2008-01-24 2010-12-09 Tinnen Baard Martin Device and method for isolating a section of a wellbore
US20110003418A1 (en) * 2009-07-03 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device including transistor and manufacturing method thereof
US20110017996A1 (en) * 2004-11-10 2011-01-27 Canon Kabushiki Kaisha Light-emitting device
US20110024751A1 (en) * 2009-07-31 2011-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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US20110031494A1 (en) * 2006-10-31 2011-02-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
US20110031491A1 (en) * 2009-07-31 2011-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110049518A1 (en) * 2009-09-02 2011-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of semiconductor device
US20110057865A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US20110057188A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing same
US20110057918A1 (en) * 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US20110064186A1 (en) * 2009-09-16 2011-03-17 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
US7910490B2 (en) 2005-09-29 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110070693A1 (en) * 2009-09-24 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
US20110069047A1 (en) * 2009-09-24 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110068852A1 (en) * 2009-09-24 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power circuit, and manufacturing mkethod of semiconductor device
US20110073991A1 (en) * 2009-09-30 2011-03-31 Semiconductor Energy Laboratory Co., Ltd. Redox capacitor and manufacturing method thereof
US20110079777A1 (en) * 2009-10-01 2011-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110084265A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and electronic device including the same
US20110085104A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
US20110084272A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110084270A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US20110084269A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US20110084266A1 (en) * 2009-10-08 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
US20110085635A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device and driving method thereof
US20110084264A1 (en) * 2009-10-08 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor layer and semiconductor device
US20110090006A1 (en) * 2009-10-21 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Analog circuit and semiconductor device
US20110090189A1 (en) * 2005-08-12 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device equipped with the semiconductor device
US20110089416A1 (en) * 2009-10-21 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110102697A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110101336A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
US20110101942A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
US20110101337A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
US20110109592A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110111558A1 (en) * 2009-11-06 2011-05-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
US20110114944A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
US20110114943A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110114945A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110115003A1 (en) * 2009-11-17 2011-05-19 Sony Corporation Solid-state imaging device and method for manufacturing solid-state imaging device, and electronic device
US20110114941A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Device including nonvolatile memory element
US20110115545A1 (en) * 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110122673A1 (en) * 2009-11-24 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
US20110121286A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110124153A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110121285A1 (en) * 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7952392B2 (en) 2008-10-31 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US20110127526A1 (en) * 2009-11-27 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
US20110127524A1 (en) * 2009-11-27 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110127525A1 (en) * 2009-11-27 2011-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110133181A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110133182A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110134350A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US20110133196A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110134345A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110133177A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Element, Semiconductor Device, And Method For Manufacturing The Same
US20110134680A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US20110133178A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110140109A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110140099A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110140098A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
US7964876B2 (en) 2006-09-29 2011-06-21 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110147736A1 (en) * 2009-12-17 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, measurement apparatus, and measurement method of relative permittivity
US20110147739A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110148463A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
US20110148835A1 (en) * 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Display device including optical sensor and driving method thereof
US20110156023A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110156027A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110157252A1 (en) * 2009-12-28 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US20110156024A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and electronic device
US20110175670A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US20110175087A1 (en) * 2010-01-20 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110175833A1 (en) * 2010-01-20 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
US20110175083A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device
US20110176348A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110181802A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Display method of display device
US7989815B2 (en) 2008-10-03 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Display device
US20110187694A1 (en) * 2006-08-31 2011-08-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US20110194327A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US20110193077A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110194332A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110199816A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of the same
US20110199351A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
US20110199364A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method
US20110198594A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Manufacturing Method Thereof
US20110199365A1 (en) * 2010-02-18 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US20110204365A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110204362A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110207269A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Transistor and manufacturing method of the same
US20110204928A1 (en) * 2010-02-23 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device, semiconductor device, and driving method thereof
US20110205254A1 (en) * 2010-02-19 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US20110210957A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US20110212570A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110210339A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110216043A1 (en) * 2010-03-08 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
US20110215325A1 (en) * 2010-03-05 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110215331A1 (en) * 2010-03-05 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20110216566A1 (en) * 2010-03-05 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20110215861A1 (en) * 2010-03-08 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US20110215385A1 (en) * 2010-03-08 2011-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110220891A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20110221723A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device
US20110220011A1 (en) * 2010-03-12 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of gallium oxide single crystal
US8021916B2 (en) 2008-09-01 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110227082A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20110228602A1 (en) * 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US20110228584A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US20110237025A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110233540A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20110233541A1 (en) * 2010-03-26 2011-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8030663B2 (en) 2008-08-08 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8049225B2 (en) 2008-08-08 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8058647B2 (en) 2008-11-13 2011-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8067775B2 (en) 2008-10-24 2011-11-29 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with two gate electrodes
US8106400B2 (en) 2008-10-24 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8115883B2 (en) 2009-08-27 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US8115201B2 (en) 2008-08-08 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor formed within
US20120049901A1 (en) * 2010-08-27 2012-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Method of Driving Semiconductor Device
US8129719B2 (en) 2008-09-01 2012-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8129717B2 (en) 2008-07-31 2012-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8134156B2 (en) 2005-11-15 2012-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including zinc oxide containing semiconductor film
US8144389B2 (en) 2008-07-10 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Electronic paper
US8158975B2 (en) 2008-10-10 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8174021B2 (en) 2009-02-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US8183099B2 (en) 2008-12-19 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
US8188477B2 (en) 2008-11-21 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20120140523A1 (en) * 2010-12-03 2012-06-07 Semiconductor Energy Laboratory Co., Ltd. Dc-dc converter and manufacturing method thereof
US8207025B2 (en) 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8207014B2 (en) 2009-06-30 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8207756B2 (en) 2009-10-30 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US8218099B2 (en) 2009-09-04 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8216878B2 (en) 2009-06-30 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8222092B2 (en) 2008-12-26 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8236635B2 (en) 2008-10-24 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8236627B2 (en) 2009-09-04 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8242494B2 (en) 2008-10-24 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor using multi-tone mask
US8241949B2 (en) 2009-07-17 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8242496B2 (en) 2009-07-17 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8247813B2 (en) 2009-12-04 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US8253135B2 (en) 2009-03-27 2012-08-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic appliance
US8258862B2 (en) 2010-02-19 2012-09-04 Semiconductor Energy Laboratory Co., Ltd. Demodulation circuit and RFID tag including the demodulation circuit
US8268642B2 (en) 2009-10-05 2012-09-18 Semiconductor Energy Laboratory Co., Ltd. Method for removing electricity and method for manufacturing semiconductor device
US20120248451A1 (en) * 2009-12-25 2012-10-04 Yuji Sone Field-effect transistor, semiconductor memory display element, image display device, and system
US8283662B2 (en) 2009-11-18 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8289753B2 (en) 2009-11-06 2012-10-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8293661B2 (en) 2009-12-08 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8293594B2 (en) 2009-07-18 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a display device having oxide semiconductor layer
US8294147B2 (en) 2009-07-10 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method the same
US8293595B2 (en) 2008-07-31 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8304765B2 (en) 2008-09-19 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Display device
US8305109B2 (en) 2009-09-16 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, light emitting device, semiconductor device, and electronic device
US8319215B2 (en) 2008-10-03 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Display device
US8320516B2 (en) 2010-03-02 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8318551B2 (en) 2008-12-01 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8324621B2 (en) 2009-10-14 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer
US8324027B2 (en) 2009-07-10 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8324626B2 (en) 2009-08-07 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8324018B2 (en) 2005-01-28 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US8338226B2 (en) 2009-04-02 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8339836B2 (en) 2010-01-15 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8339828B2 (en) 2009-11-20 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8344372B2 (en) 2008-10-03 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US8344374B2 (en) 2009-10-09 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer
US8343817B2 (en) 2008-08-08 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8343799B2 (en) 2008-10-24 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8344788B2 (en) 2010-01-22 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8350261B2 (en) 2009-02-13 2013-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a transistor, and manufacturing method of the semiconductor device
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US8357963B2 (en) 2010-07-27 2013-01-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8363452B2 (en) 2009-11-06 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8369478B2 (en) 2010-03-02 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8368066B2 (en) 2008-10-03 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US8367489B2 (en) 2009-11-28 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a stacked oxide material for thin film transistor
US8373164B2 (en) 2008-11-07 2013-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8372664B2 (en) 2009-12-25 2013-02-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8378343B2 (en) 2009-07-17 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8378391B2 (en) 2009-11-06 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including image sensor
US8377744B2 (en) 2009-12-04 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8378344B2 (en) 2009-09-04 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device with plural kinds of thin film transistors and circuits over one substrate
US8378403B2 (en) 2010-07-02 2013-02-19 Semiconductor Energy Laboratory Semiconductor device
US8378393B2 (en) 2008-10-31 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Conductive oxynitride and method for manufacturing conductive oxynitride film
US8377762B2 (en) 2009-09-16 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
US8384085B2 (en) 2009-08-07 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8389989B2 (en) 2009-09-04 2013-03-05 Semiconductor Energy Laboratory Co., Ltd. Transistor having oxide semiconductor layer and display utilizing the same
US8389988B2 (en) 2008-10-08 2013-03-05 Semiconductor Energy Laboratory Co., Ltd. Display device
US8395931B2 (en) 2010-01-22 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US8395148B2 (en) 2008-11-07 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8400187B2 (en) 2009-10-16 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US8400817B2 (en) 2009-12-28 2013-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8406038B2 (en) 2010-05-14 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8405092B2 (en) 2010-09-15 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Display device
US8410838B2 (en) 2009-11-20 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
US8411480B2 (en) 2010-04-16 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8416622B2 (en) 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8415665B2 (en) 2009-12-11 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8420553B2 (en) 2009-12-08 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8421069B2 (en) 2009-10-30 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8421071B2 (en) 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8420441B2 (en) 2009-07-31 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US8421081B2 (en) 2010-12-28 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device, memory module and electronic device
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8421068B2 (en) 2009-10-16 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8426868B2 (en) 2008-10-31 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8427595B2 (en) 2008-09-19 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Display device with pixel portion and common connection portion having oxide semiconductor layers
US8432187B2 (en) 2009-12-11 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
US8431449B2 (en) 2010-04-09 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8432730B2 (en) 2010-07-28 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8437165B2 (en) 2010-03-04 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
US8436403B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor provided with sidewall and electronic appliance
US8436431B2 (en) 2010-02-05 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including gate and three conductor electrodes
US8440510B2 (en) 2010-05-14 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8441841B2 (en) 2010-02-19 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US8442183B2 (en) 2010-03-02 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8441868B2 (en) 2010-04-09 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory having a read circuit
US8441010B2 (en) 2010-07-01 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8446171B2 (en) 2011-04-29 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing unit
US8450123B2 (en) 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
US8450783B2 (en) 2009-12-28 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8451651B2 (en) 2010-02-19 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461586B2 (en) 2010-07-16 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8461630B2 (en) 2010-12-01 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8461582B2 (en) 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8461007B2 (en) 2010-04-23 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8467231B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8467825B2 (en) 2009-11-20 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8466740B2 (en) 2010-10-29 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Receiving circuit, LSI chip, and storage medium
US8467232B2 (en) 2010-08-06 2013-06-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8472231B2 (en) 2010-04-07 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8471252B2 (en) 2008-08-08 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8470650B2 (en) 2009-10-21 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method for the same
US8472235B2 (en) 2010-03-25 2013-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8476719B2 (en) 2010-05-21 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8476927B2 (en) 2011-04-29 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8482001B2 (en) 2009-12-25 2013-07-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8482974B2 (en) 2010-02-12 2013-07-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
US8487436B2 (en) 2005-01-28 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
US8488394B2 (en) 2010-08-06 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8487844B2 (en) 2010-09-08 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device including the same
US8492764B2 (en) 2009-08-07 2013-07-23 Semicondcutor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
US8492840B2 (en) 2010-01-22 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor layer
US8492756B2 (en) 2009-01-23 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8492758B2 (en) 2009-09-24 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8492806B2 (en) 2009-10-30 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
US8492853B2 (en) 2010-02-10 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor having conductor electrode in contact with semiconductor layer
US8492757B2 (en) 2009-03-06 2013-07-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8502220B2 (en) 2009-08-07 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8502292B2 (en) 2010-07-16 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with memory cells
US8502225B2 (en) 2009-09-04 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US8502772B2 (en) 2010-07-02 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Driving method of input/output device
US8502226B2 (en) 2010-02-26 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8502221B2 (en) 2010-04-02 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with two metal oxide films and an oxide semiconductor film
US8502222B2 (en) 2007-04-25 2013-08-06 Canon Kabushiki Kaisha Amorphous oxide semiconductor, semiconductor device, thin film transistor and display device
US8501555B2 (en) 2008-09-12 2013-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8507907B2 (en) 2010-01-29 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8508256B2 (en) 2011-05-20 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US8508276B2 (en) 2010-08-25 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including latch circuit
US8508967B2 (en) 2010-09-03 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US8513773B2 (en) 2011-02-02 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device including dielectric and N-type semiconductor
US8514609B2 (en) 2010-02-05 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8518740B2 (en) 2009-07-03 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8520426B2 (en) 2010-09-08 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8518761B2 (en) 2010-04-16 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing semiconductor device
US8519387B2 (en) 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
US8519990B2 (en) 2010-03-31 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8518739B2 (en) 2008-11-13 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8525304B2 (en) 2010-05-21 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8525551B2 (en) 2011-05-20 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8531870B2 (en) 2010-08-06 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US8530892B2 (en) 2009-11-06 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8531618B2 (en) 2009-11-30 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
US8530289B2 (en) 2010-04-23 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8530285B2 (en) 2009-12-28 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8537600B2 (en) 2010-08-04 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Low off-state leakage current semiconductor memory device
US8536571B2 (en) 2011-01-12 2013-09-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8542528B2 (en) 2010-08-06 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8541782B2 (en) 2009-11-06 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for evaluating oxide semiconductor and method for manufacturing semiconductor device
US8541266B2 (en) 2011-04-01 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8541781B2 (en) 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8542034B2 (en) 2011-05-20 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8546892B2 (en) 2010-10-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8547771B2 (en) 2010-08-06 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US8546161B2 (en) 2010-09-13 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and liquid crystal display device
US8546225B2 (en) 2010-04-23 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8547753B2 (en) 2010-01-20 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8546181B2 (en) 2011-09-29 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8546811B2 (en) 2010-02-05 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8546180B2 (en) 2009-07-31 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device
US8552423B2 (en) 2009-07-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8553447B2 (en) 2010-10-05 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US8551824B2 (en) 2010-02-26 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8552712B2 (en) 2010-04-16 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
US8559220B2 (en) 2009-11-27 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8557641B2 (en) 2009-06-30 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US20130270616A1 (en) * 2012-04-13 2013-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8563973B2 (en) 2010-03-19 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8564331B2 (en) 2011-05-13 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8570065B2 (en) 2011-04-13 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Programmable LSI
US8569753B2 (en) 2010-06-04 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Storage device comprising semiconductor elements
US8569754B2 (en) 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8575610B2 (en) 2010-09-02 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8575960B2 (en) 2011-05-20 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8576620B2 (en) 2009-11-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8575678B2 (en) 2011-01-13 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with floating gate
US8576636B2 (en) 2010-07-16 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8575985B2 (en) 2011-01-05 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Storage element, storage device, and signal processing circuit
US8581818B2 (en) 2010-03-31 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
US8582348B2 (en) 2010-08-06 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8582349B2 (en) 2010-08-26 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8581625B2 (en) 2011-05-19 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8588000B2 (en) 2010-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device having a reading transistor with a back-gate electrode
US8586905B2 (en) 2010-02-12 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8587342B2 (en) 2011-05-20 2013-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8592261B2 (en) 2010-08-27 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for designing semiconductor device
US8592814B2 (en) 2009-09-24 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Device with oxide semiconductor thin film transistor
US8593857B2 (en) 2010-02-19 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device, driving method thereof, and method for manufacturing semiconductor device
US8593858B2 (en) 2010-08-31 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8593856B2 (en) 2010-01-20 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
US8598648B2 (en) 2010-03-19 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US8598635B2 (en) 2009-10-30 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Transistor
US8599604B2 (en) 2010-10-25 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and driving method thereof
US8599177B2 (en) 2009-12-18 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Method for driving liquid crystal display device
US8605059B2 (en) 2010-07-02 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Input/output device and driving method thereof
US8604476B2 (en) 2010-11-05 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
US8605477B2 (en) 2010-04-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8604472B2 (en) 2011-11-09 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8603841B2 (en) 2010-08-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of semiconductor device and light-emitting display device
US8610120B2 (en) 2010-09-15 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
US8610180B2 (en) 2010-06-11 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Gas sensor and method for manufacturing the gas sensor
US8610187B2 (en) 2009-12-18 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8609478B2 (en) 2009-06-30 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8610482B2 (en) 2011-05-27 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Trimming circuit and method for driving trimming circuit
US8614910B2 (en) 2010-07-29 2013-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8614916B2 (en) 2010-08-06 2013-12-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8619104B2 (en) 2010-02-12 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8619470B2 (en) 2010-06-23 2013-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with long data holding period
US8624237B2 (en) 2008-07-31 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8625085B2 (en) 2011-03-08 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Defect evaluation method for semiconductor
US8624239B2 (en) 2010-05-20 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8624245B2 (en) 2009-12-04 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8624650B2 (en) 2009-12-23 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8629441B2 (en) 2009-08-07 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8628987B2 (en) 2010-08-27 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of thin film transistor, liquid crystal display device, and semiconductor device
US8630127B2 (en) 2010-06-25 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8629438B2 (en) 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8630130B2 (en) 2011-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, memory unit, and signal processing circuit
US8629496B2 (en) 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8630110B2 (en) 2011-05-06 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8629432B2 (en) 2009-01-16 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8633480B2 (en) 2009-11-06 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof
US8634228B2 (en) 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US8634230B2 (en) 2011-01-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8637864B2 (en) 2011-10-13 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8637802B2 (en) 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US8637347B2 (en) 2009-07-03 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8638123B2 (en) 2011-05-20 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Adder including transistor having oxide semiconductor layer
US8637354B2 (en) 2010-06-30 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8637861B2 (en) 2009-11-20 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Transistor having oxide semiconductor with electrode facing its side surface
US8638322B2 (en) 2010-02-05 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Display device
US8643007B2 (en) 2011-02-23 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8644048B2 (en) 2010-09-13 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8643008B2 (en) 2011-07-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8648343B2 (en) 2009-07-23 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8647919B2 (en) 2010-09-13 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device and method for manufacturing the same
US8649208B2 (en) 2011-05-20 2014-02-11 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8653514B2 (en) 2010-04-09 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8654231B2 (en) 2010-03-08 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8653513B2 (en) 2010-02-26 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with sidewall insulating layer
US8654272B2 (en) 2009-08-07 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state which is in contact with a second insulatng layer
US8653520B2 (en) 2010-02-12 2014-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8658448B2 (en) 2010-12-10 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US8659957B2 (en) 2011-03-07 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8659013B2 (en) 2010-04-09 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8659015B2 (en) 2011-03-04 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8664036B2 (en) 2009-12-18 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8665403B2 (en) 2010-05-21 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8664653B2 (en) 2010-03-08 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8664652B2 (en) 2009-12-25 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8664118B2 (en) 2011-07-08 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8664658B2 (en) 2010-05-14 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8664097B2 (en) 2010-09-13 2014-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8669781B2 (en) 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8669556B2 (en) 2010-12-03 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8674351B2 (en) 2010-12-28 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor memory device
US8675382B2 (en) 2011-02-17 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Programmable LSI
US8674972B2 (en) 2010-09-08 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8674738B2 (en) 2011-05-20 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8674979B2 (en) 2009-10-30 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic device including the display device
US8675394B2 (en) 2010-08-04 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device with oxide semiconductor transistor
US8673426B2 (en) 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
US8680679B2 (en) 2010-03-08 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8679986B2 (en) 2010-10-14 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8680529B2 (en) 2011-05-05 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8681533B2 (en) 2011-04-28 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Memory circuit, signal processing circuit, and electronic device
US8686416B2 (en) 2011-03-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8686426B2 (en) 2012-04-02 2014-04-01 Samsung Display Co., Ltd. Thin film transistor having plural semiconductive oxides, thin film transistor array panel and display device including the same, and manufacturing method of thin film transistor
US8687416B2 (en) 2010-12-28 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit comprising buffer memory device
US8686750B2 (en) 2010-05-13 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Method for evaluating semiconductor device
US8687411B2 (en) 2011-01-14 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device, semiconductor device, and detecting method for defective memory cell in memory device
US8685787B2 (en) 2010-08-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8692579B2 (en) 2011-05-19 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Circuit and method of driving the same
US8692823B2 (en) 2010-08-06 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method of the same
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8698214B2 (en) 2011-10-27 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8698717B2 (en) 2009-12-18 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
US8698521B2 (en) 2011-05-20 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8703531B2 (en) 2010-03-05 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
US8704267B2 (en) 2008-10-16 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8704806B2 (en) 2009-12-10 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
US8704221B2 (en) 2011-12-23 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8705292B2 (en) 2011-05-13 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory circuit with an oxide semiconductor transistor for reducing power consumption and electronic device
US8704219B2 (en) 2010-03-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8705267B2 (en) 2010-12-03 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Integrated circuit, method for driving the same, and semiconductor device
US8709920B2 (en) 2011-02-24 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8709922B2 (en) 2011-05-06 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8710762B2 (en) 2010-06-10 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. DC/DC converter, power supply circuit, and semiconductor device
US8711312B2 (en) 2010-04-12 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8711314B2 (en) 2007-05-17 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8709688B2 (en) 2009-09-24 2014-04-29 Fuji Xerox Co., Ltd. Oxide material, electrophotographic photoreceptor, process cartridge, and image forming device
US8709889B2 (en) 2011-05-19 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and manufacturing method thereof
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8717806B2 (en) 2011-01-14 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Storage element, storage device, signal processing circuit, and method for driving storage element
US8716712B2 (en) 2010-02-19 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8718224B2 (en) 2011-08-05 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8716708B2 (en) 2011-09-29 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8716073B2 (en) 2011-07-22 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor film and method for manufacturing semiconductor device
US8724407B2 (en) 2011-03-24 2014-05-13 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US8723175B2 (en) 2007-12-08 2014-05-13 Idemitsu Kosan Co., Ltd. Oxide semiconductor field effect transistor and method for manufacturing the same
US8723176B2 (en) 2012-02-02 2014-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8728860B2 (en) 2010-09-03 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8729550B2 (en) 2009-07-18 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8730416B2 (en) 2010-12-17 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8729613B2 (en) 2011-10-14 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8729938B2 (en) 2011-05-20 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Phase locked loop and semiconductor device using the same
US8729545B2 (en) 2011-04-28 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8730730B2 (en) 2011-01-26 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Temporary storage circuit, storage device, and signal processing circuit
US8728883B2 (en) 2010-11-30 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8735892B2 (en) 2010-12-28 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using oxide semiconductor
US8736371B2 (en) 2011-05-13 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transistors each of which includes an oxide semiconductor
US8737109B2 (en) 2010-08-27 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8744038B2 (en) 2011-09-28 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Shift register circuit
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8742422B2 (en) 2009-09-04 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8743590B2 (en) 2011-04-08 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device using the same
US8743307B2 (en) 2011-11-04 2014-06-03 Samsung Display Co, Ltd. Display device
US8742804B2 (en) 2011-05-26 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Divider circuit and semiconductor device using the same
US8748224B2 (en) 2010-08-16 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8748241B2 (en) 2011-12-23 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8750022B2 (en) 2010-04-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
US8748240B2 (en) 2011-12-22 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8748889B2 (en) 2010-07-27 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8749930B2 (en) 2009-02-09 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Protection circuit, semiconductor device, photoelectric conversion device, and electronic device
US8748215B2 (en) 2009-11-28 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
US8750023B2 (en) 2010-09-13 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8748880B2 (en) 2009-11-20 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8748881B2 (en) 2009-11-28 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8754839B2 (en) 2010-11-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
US8753548B2 (en) 2008-12-12 2014-06-17 Idemitsu Kosan Co., Ltd. Composite oxide sintered body and sputtering target comprising same
US8753928B2 (en) 2011-03-11 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8754409B2 (en) 2011-03-25 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Field-effect transistor, and memory and semiconductor circuit including the same
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
US8753491B2 (en) 2009-11-13 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Method for packaging target material and method for mounting target
US8759820B2 (en) 2010-08-20 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8760442B2 (en) 2010-02-26 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Display device and E-book reader provided therewith
US8760959B2 (en) 2011-03-18 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
US8760046B2 (en) 2008-07-10 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device using the same
US8760903B2 (en) 2011-03-11 2014-06-24 Semiconductor Energy Laboratory Co., Ltd. Storage circuit
US8766250B2 (en) 2009-11-20 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8767443B2 (en) 2010-09-22 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for inspecting the same
US8765522B2 (en) 2009-11-28 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
US8766252B2 (en) 2010-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor
US8766338B2 (en) 2010-03-12 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including photosensor and transistor having oxide semiconductor
US8766253B2 (en) 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8767159B2 (en) 2007-05-18 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8766255B2 (en) 2011-03-16 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including gate trench and isolation trench
US8767442B2 (en) 2010-09-13 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell array
US8766329B2 (en) 2011-06-16 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method for manufacturing the same
US8772771B2 (en) 2012-04-30 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8772701B2 (en) 2010-05-28 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Photodetector and display device with light guide configured to face photodetector circuit and reflect light from a source
US8773906B2 (en) 2011-01-27 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
US8773173B2 (en) 2011-12-22 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, image display device, storage device, and electronic device
US8772094B2 (en) 2011-11-25 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8772849B2 (en) 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8772768B2 (en) 2010-12-28 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
US8772160B2 (en) 2010-02-26 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and deposition apparatus
US8772769B2 (en) 2011-10-13 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8780307B2 (en) 2006-10-31 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8779432B2 (en) 2011-01-26 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8779799B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Logic circuit
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8779488B2 (en) 2011-04-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8778729B2 (en) 2010-08-05 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8779798B2 (en) 2011-05-19 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Arithmetic circuit and method of driving the same
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8787102B2 (en) 2011-05-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and signal processing circuit
US8787083B2 (en) 2011-02-10 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Memory circuit
US8785926B2 (en) 2012-04-17 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785266B2 (en) 2011-01-12 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8785928B2 (en) 2012-05-31 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785241B2 (en) 2010-07-16 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8787084B2 (en) 2011-03-30 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8785990B2 (en) 2005-10-14 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including first and second or drain electrodes and manufacturing method thereof
US8787073B2 (en) 2010-08-26 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving the same
US8785258B2 (en) 2011-12-20 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8785923B2 (en) 2011-04-29 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8785933B2 (en) 2011-03-04 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8790960B2 (en) 2010-04-28 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8790961B2 (en) 2011-12-23 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8791516B2 (en) 2011-05-20 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
US8792284B2 (en) 2010-08-06 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
US8796078B2 (en) 2009-05-29 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8797785B2 (en) 2010-11-12 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8797487B2 (en) 2010-09-10 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Transistor, liquid crystal display device, and manufacturing method thereof
US8797788B2 (en) 2011-04-22 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8796683B2 (en) 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8796681B2 (en) 2011-09-07 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8796682B2 (en) 2011-11-11 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US8804405B2 (en) 2011-06-16 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US8803142B2 (en) 2009-10-21 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8802493B2 (en) 2011-09-13 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor device
US8802515B2 (en) 2010-11-11 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8803559B2 (en) 2011-04-28 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit having switching element, capacitor, and operational amplifier circuit
US8803143B2 (en) 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
US8803164B2 (en) 2010-08-06 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Solid-state image sensing device and semiconductor display device
US8809870B2 (en) 2011-01-26 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809154B2 (en) 2011-12-27 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8809992B2 (en) 2011-01-26 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809927B2 (en) 2011-02-02 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8809851B2 (en) 2010-05-14 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8809855B2 (en) 2011-10-19 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8809852B2 (en) 2010-11-30 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
US8809853B2 (en) 2011-03-04 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8811064B2 (en) 2011-01-14 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including multilayer wiring layer
US8809928B2 (en) 2011-05-06 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and method for manufacturing the semiconductor device
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8816425B2 (en) 2010-11-30 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8816349B2 (en) 2009-10-09 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor layer
US8816469B2 (en) 2010-01-29 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising protection circuit with oxide semiconductor
US8817527B2 (en) 2011-05-13 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8816662B2 (en) 2010-05-21 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, semiconductor device and display device
US8817516B2 (en) 2012-02-17 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and semiconductor device
US8815640B2 (en) 2011-10-24 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8817009B2 (en) 2010-01-20 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device and liquid crystal display device
US8824194B2 (en) 2011-05-20 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8822989B2 (en) 2011-09-22 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8823754B2 (en) 2010-04-09 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving the same
US8822991B2 (en) 2009-02-05 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
US8824193B2 (en) 2011-05-18 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
US8823092B2 (en) 2010-11-30 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8823082B2 (en) 2010-08-19 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8824192B2 (en) 2011-05-06 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8823893B2 (en) 2009-12-18 2014-09-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device with transistor including oxide semiconductor layer and electronic device
US8830661B2 (en) 2010-01-20 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Portable electronic device
US8829586B2 (en) 2010-02-05 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device having oxide semiconductor layer
US8828794B2 (en) 2011-03-11 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8829512B2 (en) 2010-12-28 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8828811B2 (en) 2010-04-23 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment
US8829528B2 (en) 2011-11-25 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including groove portion extending beyond pixel electrode
US8836626B2 (en) 2011-07-15 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US8837203B2 (en) 2011-05-19 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
US8835917B2 (en) 2010-09-13 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, power diode, and rectifier
US8835214B2 (en) 2010-09-03 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing semiconductor device
US8835918B2 (en) 2011-09-16 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8837202B2 (en) 2010-09-29 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
US8841664B2 (en) 2011-03-04 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8841662B2 (en) 2009-11-06 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8841661B2 (en) 2009-02-25 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Staggered oxide semiconductor TFT semiconductor device and manufacturing method thereof
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
US8847220B2 (en) 2011-07-15 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
US8846459B2 (en) 2011-10-24 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8847627B2 (en) 2011-05-20 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8848449B2 (en) 2011-05-20 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for driving memory device
US8848464B2 (en) 2011-04-29 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US8854865B2 (en) 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8854583B2 (en) 2010-04-12 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US8853697B2 (en) 2012-03-01 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8853684B2 (en) 2010-05-21 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8854286B2 (en) 2009-10-16 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the liquid crystal display device
US8853690B2 (en) 2009-04-16 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor layer
US8860023B2 (en) 2012-05-01 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8860108B2 (en) 2009-10-30 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide-based thin-film transistor (TFT) semiconductor memory device having source/drain electrode of one transistor connected to gate electrode of the other
US8860022B2 (en) 2012-04-27 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8860021B2 (en) 2011-12-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing the semiconductor element, and semiconductor device including the semiconductor element
US8859330B2 (en) 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8861288B2 (en) 2011-12-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Level-shift circuit and semiconductor integrated circuit
US8866984B2 (en) 2010-01-24 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US8865534B2 (en) 2010-04-23 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8866510B2 (en) 2012-05-02 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8865555B2 (en) 2011-01-26 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8866233B2 (en) 2010-01-15 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8873308B2 (en) 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US8872171B2 (en) 2009-05-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8872179B2 (en) 2011-11-30 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8872120B2 (en) 2012-08-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device and method for driving the same
US8872174B2 (en) 2012-06-01 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8871304B2 (en) 2010-11-02 2014-10-28 Ube Industries, Ltd. (Amide amino alkane) metal compound, method of manufacturing metal-containing thin film using said metal compound
US8878172B2 (en) 2008-10-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, thin film transistor, and display device
US8878174B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, memory circuit, integrated circuit, and driving method of the integrated circuit
US8878270B2 (en) 2011-04-15 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8878574B2 (en) 2012-08-10 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8878177B2 (en) 2011-11-11 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
US8878173B2 (en) 2010-07-02 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor and metal oxide
US8884283B2 (en) 2010-06-04 2014-11-11 Semiconductor Energy Laboratory Co., Ltd Memory semiconductor device having aligned side surfaces
US8884284B2 (en) 2011-12-23 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8885437B2 (en) 2011-12-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Storage device and driving method thereof
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8884294B2 (en) 2010-06-11 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
US8884470B2 (en) 2010-09-13 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8883556B2 (en) 2010-12-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8883554B2 (en) 2008-12-19 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using an oxide semiconductor
US8884651B2 (en) 2009-10-16 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US8890152B2 (en) 2011-06-17 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8889477B2 (en) 2011-06-08 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for forming thin film utilizing sputtering target
US8890166B2 (en) 2009-09-04 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US8890159B2 (en) 2012-08-03 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor stacked film and semiconductor device
US8890150B2 (en) 2011-01-27 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
US8890781B2 (en) 2009-10-21 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including display device
US8896046B2 (en) 2010-11-05 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8895976B2 (en) 2010-06-25 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US8897049B2 (en) 2011-05-13 2014-11-25 Semiconductor Energy Laboratories Co., Ltd. Semiconductor device and memory device including semiconductor device
US8896345B2 (en) 2012-04-30 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8894825B2 (en) 2010-12-17 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing the same, manufacturing semiconductor device
US8896042B2 (en) 2009-10-30 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
US8895375B2 (en) 2010-06-01 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing the same
US8902637B2 (en) 2010-11-08 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device comprising inverting amplifier circuit and driving method thereof
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8901556B2 (en) 2012-04-06 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Insulating film, method for manufacturing semiconductor device, and semiconductor device
US8901558B2 (en) 2012-11-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having multiple gates
US8902209B2 (en) 2010-09-10 2014-12-02 Semiconductor Energy Laboatory Co., Ltd. Display device
US8901552B2 (en) 2010-09-13 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Top gate thin film transistor with multiple oxide semiconductor layers
US8901554B2 (en) 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
US8906756B2 (en) 2010-05-21 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8906737B2 (en) 2010-06-18 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8912080B2 (en) 2011-01-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of the semiconductor device
US8912596B2 (en) 2011-07-15 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8913050B2 (en) 2007-07-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
US8912985B2 (en) 2011-05-12 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
US8912016B2 (en) 2010-06-25 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method and test method of semiconductor device
US8912541B2 (en) 2009-08-07 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8916867B2 (en) 2011-01-20 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor element and semiconductor device
US8916866B2 (en) 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8916865B2 (en) 2010-06-18 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916424B2 (en) 2012-02-07 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8922182B2 (en) 2009-12-04 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. DC converter circuit and power supply circuit
US8921853B2 (en) 2012-11-16 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having oxide semiconductor layer
US8921849B2 (en) 2011-09-15 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Insulated-gate field-effect transistor
US8921948B2 (en) 2011-01-12 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8927990B2 (en) 2011-10-21 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8927329B2 (en) 2011-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor device with improved electronic properties
US8929128B2 (en) 2012-05-17 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and writing method of the same
US8928053B2 (en) 2010-08-27 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Input/output device
US8929161B2 (en) 2011-04-21 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US8928644B2 (en) 2010-02-19 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving display device
US8928466B2 (en) 2010-08-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8927351B2 (en) 2009-11-06 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8927982B2 (en) 2011-03-18 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, semiconductor device, and manufacturing method of semiconductor device
US8927981B2 (en) 2009-03-30 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8927985B2 (en) 2012-09-20 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8928645B2 (en) 2010-05-21 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8932903B2 (en) 2012-05-10 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Method for forming wiring, semiconductor device, and method for manufacturing semiconductor device
US8937305B2 (en) 2011-10-24 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8937307B2 (en) 2012-08-10 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8936963B2 (en) 2009-03-13 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US8937304B2 (en) 2011-01-28 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8941127B2 (en) 2010-03-31 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Field-sequential display device
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8941114B2 (en) 2008-09-12 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Display device including protective circuit
US8941958B2 (en) 2011-04-22 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8941790B2 (en) 2010-05-21 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8946812B2 (en) 2011-07-21 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8947155B2 (en) 2012-04-06 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Solid-state relay
US8946066B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US8947121B2 (en) 2013-03-12 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8946709B2 (en) 2010-03-19 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8946790B2 (en) 2011-06-10 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8947910B2 (en) 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising inverters and capacitor, and driving method thereof
US8946702B2 (en) 2012-04-13 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
US8945981B2 (en) 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8945982B2 (en) 2010-04-23 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8952381B2 (en) 2012-06-29 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8952377B2 (en) 2011-07-08 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8952723B2 (en) 2013-02-13 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US8951899B2 (en) 2011-11-25 2015-02-10 Semiconductor Energy Laboratory Method for manufacturing semiconductor device
US8953112B2 (en) 2010-09-15 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8952722B2 (en) 2012-10-17 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and method for driving programmable logic device
US8952995B2 (en) 2009-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Driving method of display device and display device
US8952380B2 (en) 2011-10-27 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8958263B2 (en) 2011-06-10 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8956912B2 (en) 2012-01-26 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8956944B2 (en) 2011-03-25 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8957468B2 (en) 2010-11-05 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Variable capacitor and liquid crystal display device
US8958231B2 (en) 2011-06-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Memory device including first to seventh transistors
US8956929B2 (en) 2011-11-30 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8957462B2 (en) 2010-12-09 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an N-type transistor with an N-type semiconductor containing nitrogen as a gate
US8957881B2 (en) 2010-01-20 2015-02-17 Semiconductor Energy Laboratory Co., Ltd. Display device
US8957415B2 (en) 2012-05-21 2015-02-17 Samsung Display Co., Ltd. Thin film transistor and thin film transistor array panel including the same
US8963517B2 (en) 2009-10-21 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit comprising transistor which includes an oixide semiconductor
US8962386B2 (en) 2011-11-25 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8963148B2 (en) 2012-11-15 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8964450B2 (en) 2011-05-20 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and signal processing circuit
US8969182B2 (en) 2011-04-27 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8970251B2 (en) 2012-05-02 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8969130B2 (en) 2011-11-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Insulating film, formation method thereof, semiconductor device, and manufacturing method thereof
US8969867B2 (en) 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8975695B2 (en) 2013-04-19 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device
US8975634B2 (en) 2011-10-07 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film
US8975917B2 (en) 2012-03-01 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
US8975930B2 (en) 2012-08-10 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US8981374B2 (en) 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8982607B2 (en) 2011-09-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US8981370B2 (en) 2012-03-08 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981376B2 (en) 2012-08-02 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8981372B2 (en) 2012-09-13 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
US8982589B2 (en) 2010-03-02 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Boosting circuit and RFID tag including boosting circuit
US8987728B2 (en) 2011-03-25 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US8987730B2 (en) 2012-02-03 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8987731B2 (en) 2012-05-31 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8987727B2 (en) 2011-01-28 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
US8988152B2 (en) 2012-02-29 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8988116B2 (en) 2011-12-23 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US8988625B2 (en) 2011-11-11 2015-03-24 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US20150084044A1 (en) 2013-09-23 2015-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8994003B2 (en) 2010-09-22 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Power-insulated-gate field-effect transistor
US8993386B2 (en) 2009-03-12 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8994019B2 (en) 2011-08-05 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
US8994024B2 (en) 2009-07-18 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8994891B2 (en) 2012-05-16 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and touch panel
US8995218B2 (en) 2012-03-07 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9001563B2 (en) 2011-04-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8999751B2 (en) 2009-10-09 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for making oxide semiconductor device
US9001959B2 (en) 2011-08-29 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device
US9006736B2 (en) 2013-07-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006729B2 (en) 2009-11-13 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9007812B2 (en) 2010-09-14 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a cell array overlapping a driver circuit
US9007093B2 (en) 2012-05-30 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9007090B2 (en) 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
US9006024B2 (en) 2012-04-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9007816B2 (en) 2011-11-25 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Memory circuit and memory device
US9007092B2 (en) 2013-03-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9006733B2 (en) 2012-01-26 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US9006635B2 (en) 2012-09-12 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Photodetector circuit and semiconductor device
US9012993B2 (en) 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9012913B2 (en) 2012-01-10 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9012905B2 (en) 2011-04-08 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor comprising oxide semiconductor and method for manufacturing the same
US9012918B2 (en) 2009-03-27 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor
US9012904B2 (en) 2011-03-25 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9019320B2 (en) 2010-04-28 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic appliance
US9018624B2 (en) 2012-09-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic appliance
US9018629B2 (en) 2011-10-13 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9023684B2 (en) 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US9029863B2 (en) 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9030105B2 (en) 2011-04-01 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9029191B2 (en) 2009-09-24 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
US9029852B2 (en) 2011-09-29 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9035301B2 (en) 2013-06-19 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9040984B2 (en) 2012-11-15 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor with ZrO or HfO gate insulator sandwiched between two SiO or AIO gate insulators over an oxide semiconductor film
US9041449B2 (en) 2011-04-29 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
US9040980B2 (en) 2010-03-26 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor with an oxide semiconductor layer
US9042161B2 (en) 2010-09-13 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9040981B2 (en) 2012-01-20 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9041202B2 (en) 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9041442B2 (en) 2012-05-09 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9048321B2 (en) 2011-12-02 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9048323B2 (en) 2012-04-30 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9048832B2 (en) 2013-02-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9048324B2 (en) 2012-05-10 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9048320B2 (en) 2008-09-19 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Display device including oxide semiconductor layer
US9047836B2 (en) 2009-12-24 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9048265B2 (en) 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
US9048094B2 (en) 2009-09-24 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising forming oxide semiconductor by sputtering
US9047947B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including register components
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
US9048105B2 (en) 2011-05-20 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US9055245B2 (en) 2011-09-22 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Photodetector including difference data generation circuit and data input selection circuit
US9054678B2 (en) 2012-07-06 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9053675B2 (en) 2011-11-11 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Signal line driver circuit and liquid crystal display device
US9054200B2 (en) 2012-04-13 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9059689B2 (en) 2013-01-24 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including flip-flop and logic circuit
US9058047B2 (en) 2010-08-26 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
US9058892B2 (en) 2012-03-14 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and shift register
US9059029B2 (en) 2012-03-05 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9059295B2 (en) 2010-04-02 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having an oxide semiconductor and metal oxide films
US9057126B2 (en) 2011-11-29 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target and method for manufacturing semiconductor device
US9059219B2 (en) 2012-06-27 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9059704B2 (en) 2011-05-31 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9064596B2 (en) 2013-02-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9065438B2 (en) 2013-06-18 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9064966B2 (en) 2012-12-28 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor
US9064884B2 (en) 2010-06-04 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having aligned side surfaces
US9064574B2 (en) 2012-11-06 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9064853B2 (en) 2011-08-19 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9064473B2 (en) 2010-05-12 2015-06-23 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9070778B2 (en) 2011-12-20 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9070776B2 (en) 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9076505B2 (en) 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9076874B2 (en) 2011-06-17 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9076825B2 (en) 2013-01-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US9076871B2 (en) 2011-11-30 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
US9082858B2 (en) 2010-02-19 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Transistor including an oxide semiconductor and display device using the same
US9083327B2 (en) 2012-07-06 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
US9083335B2 (en) 2011-08-24 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with switch and logic circuit
US9082860B2 (en) 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9082863B2 (en) 2012-08-10 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9082663B2 (en) 2011-09-16 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9082670B2 (en) 2011-09-09 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9082676B2 (en) 2012-03-09 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US9087700B2 (en) 2012-03-14 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, transistor, and semiconductor device
US9087726B2 (en) 2012-11-16 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9087744B2 (en) 2010-11-05 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving transistor
US9088269B2 (en) 2013-03-14 2015-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9094007B2 (en) 2013-05-14 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
US9093988B2 (en) 2012-08-10 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US9093328B2 (en) 2009-11-06 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof
US9093538B2 (en) 2011-04-08 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9093539B2 (en) 2011-05-13 2015-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9099885B2 (en) 2011-06-17 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Wireless power feeding system
US9097925B2 (en) 2012-07-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Display device
US9099437B2 (en) 2011-03-08 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9099560B2 (en) 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9105608B2 (en) 2011-10-07 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9105251B2 (en) 2010-01-20 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
US9103724B2 (en) 2010-11-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photosensor comprising oxide semiconductor, method for driving the semiconductor device, method for driving the photosensor, and electronic device
US9105749B2 (en) 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9105658B2 (en) 2013-01-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing oxide semiconductor layer
US9104395B2 (en) 2012-05-02 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Processor and driving method thereof
US9105609B2 (en) 2009-10-30 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Oxide-based semiconductor non-linear element having gate electrode electrically connected to source or drain electrode
US9105353B2 (en) 2011-05-20 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device including the memory device
US9112037B2 (en) 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US9112460B2 (en) 2013-04-05 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Signal processing device
US9112036B2 (en) 2011-06-10 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9117713B2 (en) 2009-11-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a gate of an amplifier transistor under an insulating layer and a transfer transistor channel over the insulating layer the amplifier transistor and transfer transistor overlapping
US9117701B2 (en) 2011-05-06 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9117409B2 (en) 2012-03-14 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting display device with transistor and capacitor discharging gate of driving electrode and oxide semiconductor layer
US9117920B2 (en) 2011-05-19 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
US9117537B2 (en) 2010-05-21 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Pulse output circuit, shift register, and display device
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9123692B2 (en) 2011-11-10 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9123632B2 (en) 2011-09-30 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9129667B2 (en) 2012-05-25 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9130367B2 (en) 2012-11-28 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Display device
US9130047B2 (en) 2013-07-31 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9129703B2 (en) 2010-08-16 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor memory device
US9130048B2 (en) 2011-12-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US9130044B2 (en) 2011-07-01 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9131171B2 (en) 2012-02-29 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Image sensor, camera, surveillance system, and method for driving the image sensor
US9136388B2 (en) 2011-07-22 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9136389B2 (en) 2008-10-24 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor, thin film transistor, and display device
US9135880B2 (en) 2010-08-16 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Control circuit of liquid crystal display device, liquid crystal display device, and electronic device including liquid crystal display device
US9135182B2 (en) 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
US9136338B2 (en) 2008-05-22 2015-09-15 Idemitsu Kosan Co., Ltd. Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistor
US9136297B2 (en) 2011-08-19 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US9142593B2 (en) 2013-08-30 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Display device
US9142681B2 (en) 2011-09-26 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9142568B2 (en) 2010-09-10 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting display device
US9142652B2 (en) 2012-10-12 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and manufacturing apparatus of semiconductor device
US9142679B2 (en) 2011-12-02 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
US9142320B2 (en) 2011-04-08 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US9147706B2 (en) 2012-05-29 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having sensor circuit having amplifier circuit
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US20150279956A1 (en) * 2010-10-19 2015-10-01 Fujitsu Limited Semiconductor device
US9153436B2 (en) 2012-10-17 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9153649B2 (en) 2012-11-30 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for evaluating semiconductor device
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
US9154136B2 (en) 2013-03-25 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9153313B2 (en) 2013-03-26 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Normally-off, power-gated memory circuit with two data retention stages for reducing overhead power
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US9159837B2 (en) 2012-05-10 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9159838B2 (en) 2012-11-16 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9165951B2 (en) 2013-02-28 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9165632B2 (en) 2013-01-24 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9167234B2 (en) 2011-02-14 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9166060B2 (en) 2013-06-05 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9166192B2 (en) 2012-08-28 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Display device having plural sealants at periphery of pixel portion
US9166021B2 (en) 2012-10-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9171630B2 (en) 2013-03-14 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
US9171640B2 (en) 2009-10-09 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Shift register and display device
US9171840B2 (en) 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9172370B2 (en) 2012-12-06 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9171938B2 (en) 2009-09-24 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and method for manufacturing the same
US9171957B2 (en) 2012-01-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9172369B2 (en) 2013-05-17 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9172237B2 (en) 2011-05-19 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US9178073B2 (en) 2010-11-26 2015-11-03 Kobe Steel, Ltd. Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
US9178419B2 (en) 2010-04-16 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Power source circuit including transistor with oxide semiconductor
US9176571B2 (en) 2012-03-02 2015-11-03 Semiconductor Energy Laboratories Co., Ltd. Microprocessor and method for driving microprocessor
US9184245B2 (en) 2012-08-10 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US9184160B2 (en) 2012-01-26 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9184297B2 (en) 2012-07-20 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a void portion in an insulation film and method for manufacturing a semiconductor device comprising a void portion in an insulating film
US9184210B2 (en) 2012-05-31 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device with selection circuit for image signal polarity inversion
US9184296B2 (en) 2011-03-11 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having c-axis aligned portions and doped portions
US9183894B2 (en) 2012-02-24 2015-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190527B2 (en) 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US9190413B2 (en) 2010-02-05 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190523B2 (en) 2011-09-22 2015-11-17 Samsung Display Co., Ltd. Oxide semiconductor, thin film transistor including the same, and thin film transistor array panel including the same
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
US9190172B2 (en) 2013-01-24 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9190525B2 (en) 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
US9190448B2 (en) 2013-08-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device and operation method thereof
US9196639B2 (en) 2012-12-28 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9196593B2 (en) 2008-10-01 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
US9196743B2 (en) 2012-04-17 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Field effect device with oxide semiconductor layer
US9196633B2 (en) 2008-09-19 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Display device
US9196741B2 (en) 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9196738B2 (en) 2009-12-11 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9202546B2 (en) 2009-10-29 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9200952B2 (en) 2011-07-15 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photodetector and an analog arithmetic circuit
US9202827B2 (en) 2008-12-24 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
US9203478B2 (en) 2010-03-31 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Power supply device and driving method thereof
US9202925B2 (en) 2013-05-20 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9202822B2 (en) 2010-12-17 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9209267B2 (en) 2011-11-30 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US9209314B2 (en) 2010-06-16 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
US9209795B2 (en) 2013-05-17 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Signal processing device and measuring method
US9209256B2 (en) 2012-08-02 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
US9209092B2 (en) 2011-01-26 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a wide-gap semiconductor layer on inner wall of trench
US9208723B2 (en) 2005-04-19 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor with oxide semiconductor
US9209307B2 (en) 2013-05-20 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9209206B2 (en) 2010-05-21 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Pulse converter circuit
US9207504B2 (en) 2006-04-06 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, semiconductor device, and electronic appliance
US9207511B2 (en) 2009-10-30 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, driving method of the same, and electronic appliance including the same
US9204849B2 (en) 2012-08-24 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Radiation detection panel, radiation imaging device, and diagnostic imaging device
US9207751B2 (en) 2012-03-01 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9214121B2 (en) 2010-01-20 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US9214474B2 (en) 2011-07-08 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9214519B2 (en) 2011-05-10 2015-12-15 Idemitsu Kosan Co., Ltd. In2O3—SnO2—ZnO sputtering target
US9219164B2 (en) 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
US9217903B2 (en) 2009-12-24 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Display device
US9218966B2 (en) 2011-10-14 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
US9219161B2 (en) 2012-10-24 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9218081B2 (en) 2010-04-28 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and driving method the same
US9219159B2 (en) 2011-03-25 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming oxide semiconductor film and method for manufacturing semiconductor device
US9219160B2 (en) 2011-09-29 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9224609B2 (en) 2009-12-04 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
US9225329B2 (en) 2014-03-07 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driving method thereof, and electronic appliance
US9224339B2 (en) 2010-07-02 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9230683B2 (en) 2012-04-25 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9231002B2 (en) 2013-05-03 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9230996B2 (en) 2013-12-27 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9231111B2 (en) 2013-02-13 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9236490B2 (en) 2012-04-27 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Transistor including oxide semiconductor film having regions of different thickness
US9235515B2 (en) 2012-03-29 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Array controller and storage system
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9240488B2 (en) 2009-12-18 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9240244B2 (en) 2013-03-14 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device and semiconductor device
US9240492B2 (en) 2012-08-10 2016-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US9245650B2 (en) 2013-03-15 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9245589B2 (en) 2013-03-25 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having Schmitt trigger NAND circuit and Schmitt trigger inverter
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9245484B2 (en) 2009-10-21 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. E-book reader
US9246476B2 (en) 2013-05-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit
US9246047B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9246011B2 (en) 2012-11-30 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9245593B2 (en) 2013-10-16 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for driving arithmetic processing unit
US9252283B2 (en) 2012-11-30 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9252279B2 (en) 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9257173B2 (en) 2013-10-18 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Arithmetic processing unit and driving method thereof
US9257422B2 (en) 2011-12-06 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit and method for driving signal processing circuit
US9257569B2 (en) 2012-10-23 2016-02-09 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
US9257085B2 (en) 2009-05-21 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit, display device, electronic device, and method for driving electronic circuit
US9263259B2 (en) 2012-10-17 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor
US9261943B2 (en) 2012-05-02 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9263589B2 (en) 2010-05-21 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9263451B2 (en) 2010-10-29 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Storage device including memory cell using transistor having oxide semiconductor and amplifier circuit
US9263531B2 (en) 2012-11-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film, film formation method thereof, and semiconductor device
US9264693B2 (en) 2011-12-26 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Motion recognition device
US9261998B2 (en) 2010-03-08 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic system
US9263471B2 (en) 2010-12-28 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor memory device
US9269915B2 (en) 2013-09-18 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
US9269821B2 (en) 2012-09-24 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9269822B2 (en) 2013-09-12 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9267199B2 (en) 2013-02-28 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing sputtering target, method for forming oxide film, and transistor
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
US9269725B2 (en) 2010-01-24 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Display device
US9276128B2 (en) 2013-10-22 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and etchant used for the same
US9276125B2 (en) 2013-03-01 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9276577B2 (en) 2013-07-05 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9275987B2 (en) 2013-03-14 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9276121B2 (en) 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9281410B2 (en) 2012-03-14 2016-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9281237B2 (en) 2011-10-13 2016-03-08 Semiconductor Energy Laboratory Co., Ltd. Transistor having reduced channel length
US9281409B2 (en) 2013-07-16 2016-03-08 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor for integrated circuit
US9281408B2 (en) 2013-05-20 2016-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9287407B2 (en) 2011-06-10 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9287294B2 (en) 2010-12-28 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Capacitor and semiconductor device having oxide semiconductor
US9287411B2 (en) 2012-10-24 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9285848B2 (en) 2012-04-27 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Power reception control device, power reception device, power transmission and reception system, and electronic device
US9287405B2 (en) 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
US9287370B2 (en) 2012-03-02 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Memory device comprising a transistor including an oxide semiconductor and semiconductor device including the same
US9287410B2 (en) 2013-12-18 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9287117B2 (en) 2012-10-17 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor
US9287352B2 (en) 2013-06-19 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and formation method thereof
US9287118B2 (en) 2014-05-16 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor substrate and semiconductor device
US9287878B2 (en) 2014-04-25 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293480B2 (en) 2013-07-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US9293592B2 (en) 2013-10-11 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9293598B2 (en) 2012-12-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor layer
US9293602B2 (en) 2012-08-10 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9293186B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9293540B2 (en) 2012-12-03 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293599B2 (en) 2013-05-20 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9293544B2 (en) 2013-02-26 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having buried channel structure
US9294096B2 (en) 2014-02-28 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9294075B2 (en) 2013-03-14 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9293104B2 (en) 2010-07-02 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9293589B2 (en) 2012-01-25 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9299848B2 (en) 2014-03-14 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RF tag, and electronic device
US9299723B2 (en) 2010-05-21 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with light-blocking layers
US9299852B2 (en) 2011-06-16 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9299855B2 (en) 2013-08-09 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dual gate insulating layers
US9299851B2 (en) 2010-11-05 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9299432B2 (en) 2012-05-11 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
US9300292B2 (en) 2014-01-10 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Circuit including transistor
US9298057B2 (en) 2012-07-20 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the display device
US9299474B2 (en) 2010-07-30 2016-03-29 Samsung Display Co., Ltd. Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor
US9306079B2 (en) 2012-10-17 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9305774B2 (en) 2013-03-22 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Method for processing thin film and method for manufacturing semiconductor device
US9305630B2 (en) 2013-07-17 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9304523B2 (en) 2012-01-30 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and method for driving the same
US9306074B2 (en) 2013-06-05 2016-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9311982B2 (en) 2014-04-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9312392B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9310866B2 (en) 2012-06-01 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and alarm device
US9312278B2 (en) 2012-10-30 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9312349B2 (en) 2013-07-08 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9312269B2 (en) 2013-05-16 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9311876B2 (en) 2008-06-17 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
US9318506B2 (en) 2011-07-08 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9318374B2 (en) 2011-09-21 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device comprising peripheral circuit, Shielding layer, and memory cell array
US9318618B2 (en) 2013-12-27 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9316695B2 (en) 2012-12-28 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9318484B2 (en) 2013-02-20 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9324747B2 (en) 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9324875B2 (en) 2012-10-17 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9324449B2 (en) 2012-03-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, signal processing unit having the driver circuit, method for manufacturing the signal processing unit, and display device
US9324874B2 (en) 2008-10-03 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device comprising an oxide semiconductor
US9324882B2 (en) 2012-06-06 2016-04-26 Kobe Steel, Ltd. Thin film transistor
US9324876B2 (en) 2013-09-06 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9324737B2 (en) 2012-11-28 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9324810B2 (en) 2012-11-30 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film
US9330909B2 (en) 2012-10-17 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9331210B2 (en) 2010-09-03 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor and method for manufacturing semiconductor device
US9331207B2 (en) 2012-07-17 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device and manufacturing method therof
US9331100B2 (en) 2012-09-24 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Display device
US9331510B2 (en) 2012-03-28 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Protective circuit, battery charger, and power storage device
US9331156B2 (en) 2011-12-15 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9331689B2 (en) 2012-04-27 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Power supply circuit and semiconductor device including the same
US9331206B2 (en) 2011-04-22 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US9337826B2 (en) 2012-05-11 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9337342B2 (en) 2012-04-13 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9336739B2 (en) 2010-07-02 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9337843B2 (en) 2012-05-25 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9337214B2 (en) 2013-09-13 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Display device
US9336853B2 (en) 2014-05-29 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Memory device, electronic component, and electronic device
US9337344B2 (en) 2013-05-09 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9336845B2 (en) 2011-05-20 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Register circuit including a volatile memory and a nonvolatile memory
US9337836B2 (en) 2012-05-25 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
US9337343B2 (en) 2013-02-27 2016-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driver circuit, and display device
US9343120B2 (en) 2012-06-01 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. High speed processing unit with non-volatile register
US9343480B2 (en) 2010-08-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9344037B2 (en) 2014-07-25 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Oscillator circuit and semiconductor device including the same
US9343288B2 (en) 2013-07-31 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9341722B2 (en) 2013-02-27 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9344090B2 (en) 2011-05-16 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9343578B2 (en) 2012-12-28 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and measurement device
US9343579B2 (en) 2013-05-20 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349750B2 (en) 2012-11-16 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
US9350358B2 (en) 2014-03-06 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9349751B2 (en) 2013-12-12 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9349849B2 (en) 2012-03-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
US9350295B2 (en) 2009-11-20 2016-05-24 Semiconductor Energy Laboratoty Co., Ltd. Modulation circuit and semiconductor device including the same
US9349593B2 (en) 2012-12-03 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9349875B2 (en) 2014-06-13 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
US9349454B2 (en) 2014-03-07 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9349722B2 (en) 2012-03-29 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including a memory cell comprising a D/A converter
US9349869B2 (en) 2012-10-24 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
US9356098B2 (en) 2013-12-27 2016-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor film
US9356054B2 (en) 2013-12-27 2016-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9362412B2 (en) 2009-03-27 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9362417B2 (en) 2012-02-03 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9360564B2 (en) 2013-08-30 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9362411B2 (en) 2012-04-16 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9366896B2 (en) 2012-10-12 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and touch panel
US9368633B2 (en) 2010-12-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Oxide material and semiconductor device
US9368636B2 (en) 2013-04-01 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a plurality of oxide semiconductor layers
US9368053B2 (en) 2010-09-15 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device
US9373368B2 (en) 2014-05-30 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9373711B2 (en) 2013-02-27 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9374048B2 (en) 2013-08-20 2016-06-21 Semiconductor Energy Laboratory Co., Ltd. Signal processing device, and driving method and program thereof
US9377660B2 (en) 2007-05-17 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9379192B2 (en) 2013-12-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9379113B2 (en) 2012-02-09 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and method for manufacturing semiconductor device
US9379713B2 (en) 2014-01-17 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Data processing device and driving method thereof
US9379142B2 (en) 2006-04-05 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
US9378777B2 (en) 2014-03-12 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Back gate bias voltage control of oxide semiconductor transistor
US9378776B2 (en) 2014-02-21 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9379138B2 (en) 2013-07-19 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Imaging device with drive voltage dependent on external light intensity
US9385713B2 (en) 2014-10-10 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, processing unit, electronic component, and electronic device
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
US9385054B2 (en) 2013-11-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing device and manufacturing method thereof
US9385592B2 (en) 2013-08-21 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Charge pump circuit and semiconductor device including the same
US9385720B2 (en) 2014-03-13 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9391209B2 (en) 2010-02-05 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9391096B2 (en) 2013-01-18 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9391157B2 (en) 2013-09-06 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor transistor device
US9390664B2 (en) 2012-07-26 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9391620B2 (en) 2012-12-24 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device and semiconductor device
US9390667B2 (en) 2010-06-16 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Method for driving input-output device, and input-output device
US9390665B2 (en) 2012-11-30 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Display device
US9397637B2 (en) 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
US9395070B2 (en) 2013-07-19 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Support of flexible component and light-emitting device
US9397222B2 (en) 2011-05-13 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9401364B2 (en) 2014-09-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9401407B2 (en) 2010-04-07 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
US9401714B2 (en) 2012-10-17 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Programmable logic device
US9401432B2 (en) 2014-01-16 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9406698B2 (en) 2012-08-28 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US9406398B2 (en) 2009-09-24 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device including the driver circuit, and electronic appliance including the display device
US9406810B2 (en) 2012-12-03 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9406760B2 (en) 2014-02-21 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, transistor, semiconductor device, display device, and electronic appliance
US9406370B2 (en) 2014-05-29 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory device, and semiconductor device and electronic appliance including the same
US9406761B2 (en) 2013-09-13 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9412762B2 (en) 2013-07-31 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter and semiconductor device
US9412876B2 (en) 2014-02-07 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9412877B2 (en) 2013-02-12 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9412739B2 (en) 2014-04-11 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9412764B2 (en) 2012-11-28 2016-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
US9419146B2 (en) 2012-01-26 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9419143B2 (en) 2013-11-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9419622B2 (en) 2014-03-07 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9419113B2 (en) 2009-05-29 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9419018B2 (en) 2014-05-30 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9425045B2 (en) 2010-05-21 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor and manufacturing method thereof
US9424950B2 (en) 2013-07-10 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9425107B2 (en) 2011-03-10 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US9425220B2 (en) 2012-08-28 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9423860B2 (en) 2012-09-03 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Microcontroller capable of being in three modes
US9425322B2 (en) 2011-03-28 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including exposure of oxide semiconductor to reducing atmosphere
US9424923B2 (en) 2010-12-17 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9425226B2 (en) 2014-03-13 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US9431541B2 (en) 2013-08-22 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US9431545B2 (en) 2011-09-23 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9431435B2 (en) 2013-10-22 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9437428B2 (en) 2013-11-29 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having an oxide semiconductor layer with increased hydrogen concentration
US9438207B2 (en) 2014-10-17 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9437744B2 (en) 2013-03-14 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9438234B2 (en) 2014-11-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device including logic circuit
US9437273B2 (en) 2012-12-26 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9437741B2 (en) 2013-05-16 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9437594B2 (en) 2012-07-27 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9435696B2 (en) 2012-05-02 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Temperature sensor circuit and semiconductor device including temperature sensor circuit
US9437743B2 (en) 2010-10-07 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Thin film element, semiconductor device, and method for manufacturing the same
US9437831B2 (en) 2013-12-02 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US9437454B2 (en) 2010-06-29 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Wiring board, semiconductor device, and manufacturing methods thereof
US9438206B2 (en) 2013-08-30 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Storage circuit and semiconductor device
US9443844B2 (en) 2011-05-10 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Gain cell semiconductor memory device and driving method thereof
US9443592B2 (en) 2013-07-18 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9443880B2 (en) 2010-08-06 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US9444337B2 (en) 2013-07-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. DCDC converter including clock generation circuit, error amplifier and comparator
US9443564B2 (en) 2015-01-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9443984B2 (en) 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443987B2 (en) 2013-08-23 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443872B2 (en) 2014-03-07 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443934B2 (en) 2013-09-19 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9444459B2 (en) 2011-05-06 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
US9443455B2 (en) 2011-02-25 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Display device having a plurality of pixels
US9450581B2 (en) 2014-09-30 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
US9449569B2 (en) 2012-07-13 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for driving liquid crystal display device
US9450102B2 (en) 2013-04-26 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9450133B2 (en) 2008-11-28 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Photosensor and display device
US9449853B2 (en) 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
US9449996B2 (en) 2012-08-03 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9449574B2 (en) 2012-10-12 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. LCD overdriving using difference between average values of groups of pixels between two frames
US9450080B2 (en) 2013-12-20 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9455709B2 (en) 2014-03-05 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9455349B2 (en) 2013-10-22 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor with reduced impurity diffusion
US9455280B2 (en) 2012-09-13 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9454923B2 (en) 2013-05-17 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9455287B2 (en) 2014-06-25 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Imaging device, monitoring device, and electronic appliance
US9461126B2 (en) 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
US9462260B2 (en) 2010-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Display device
US9461179B2 (en) 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
US9467047B2 (en) 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
US9467139B2 (en) 2014-03-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9466618B2 (en) 2011-05-13 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including two thin film transistors and method of manufacturing the same
US9466615B2 (en) 2013-12-26 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9466725B2 (en) 2013-01-24 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9472676B2 (en) 2011-03-25 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9473714B2 (en) 2010-07-01 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Solid-state imaging device and semiconductor display device
US9472682B2 (en) 2012-06-29 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US9472559B2 (en) 2009-12-28 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9472678B2 (en) 2013-12-27 2016-10-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9478535B2 (en) 2012-08-31 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9478704B2 (en) 2011-11-30 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9478664B2 (en) 2013-12-25 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9478276B2 (en) 2014-04-10 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9479175B2 (en) 2014-02-07 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9478597B2 (en) 2008-09-19 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9479152B2 (en) 2012-05-25 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US9478185B2 (en) 2010-05-12 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device and display method thereof
US9477294B2 (en) 2012-10-17 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Microcontroller and method for manufacturing the same
US9482919B2 (en) 2013-02-25 2016-11-01 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device with improved driver circuit
US9489988B2 (en) 2015-02-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Memory device
US9489830B2 (en) 2011-06-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Communication method and communication system
US9490368B2 (en) 2010-05-20 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US9489088B2 (en) 2010-06-16 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Input-output device and method for driving input-output device
US9490241B2 (en) 2011-07-08 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a first inverter and a second inverter
US9496412B2 (en) 2014-07-15 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
US9496743B2 (en) 2010-09-13 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Power receiving device and wireless power feed system
US9494829B2 (en) 2011-01-28 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and liquid crystal display device containing the same
US9494644B2 (en) 2013-11-22 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory circuit and logic array
US9496285B2 (en) 2014-12-10 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9496409B2 (en) 2013-03-26 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9496408B2 (en) 2012-05-31 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor stack with different ratio of indium and gallium
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US9496411B2 (en) 2014-05-23 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9496330B2 (en) 2013-08-02 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9494830B2 (en) 2013-06-05 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Sequential circuit and semiconductor device
US9496138B2 (en) 2011-07-08 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device
US9496022B2 (en) 2014-05-29 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including power management unit for refresh operation
US9496376B2 (en) 2014-09-19 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9500916B2 (en) 2013-07-25 2016-11-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9502094B2 (en) 2012-05-25 2016-11-22 Semiconductor Energy Laboratory Co., Ltd. Method for driving memory element
US9502434B2 (en) 2014-04-18 2016-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9502572B2 (en) 2011-12-27 2016-11-22 Semiconductor Energy Laboratory Co., Ltd. Bottom-gate transistor including an oxide semiconductor layer contacting an oxygen-rich insulating layer
US9508864B2 (en) 2014-02-19 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device
US9508276B2 (en) 2012-06-29 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Method of driving display device including comparator circuit, and display device including comparator circuit
US9508448B2 (en) 2011-03-08 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Memory element and signal processing circuit
US9508861B2 (en) 2013-05-16 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9507366B2 (en) 2012-03-29 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Power supply control device
US9508759B2 (en) 2011-06-30 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US9509314B2 (en) 2014-03-13 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Method for operating programmable logic device
US9508709B2 (en) 2011-09-16 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, light-emitting device, and electronic device
US9515094B2 (en) 2013-06-26 2016-12-06 Semiconductor Energy Laboratory Co., Ltd. Storage device and semiconductor device
US9520411B2 (en) 2009-11-13 2016-12-13 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
US9520873B2 (en) 2014-08-08 2016-12-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9525073B2 (en) 2014-05-30 2016-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor
US9524993B2 (en) 2010-02-12 2016-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a transistor with an oxide semiconductor layer between a first gate electrode and a second gate electrode
US9530892B2 (en) 2012-10-24 2016-12-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9530804B2 (en) 2013-10-22 2016-12-27 Semiconductor Energy Laboratory Co., Ltd. Display device
US9530856B2 (en) 2013-12-26 2016-12-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
US9537014B2 (en) 2014-05-29 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and electronic device
US9537478B2 (en) 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9543295B2 (en) 2014-09-04 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9542977B2 (en) 2014-04-11 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9541386B2 (en) 2012-03-21 2017-01-10 Semiconductor Energy Laboratory Co., Ltd. Distance measurement device and distance measurement system
US9548327B2 (en) 2014-11-10 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device having a selenium containing photoelectric conversion layer
US9546416B2 (en) 2010-09-13 2017-01-17 Semiconductor Energy Laboratory Co., Ltd. Method of forming crystalline oxide semiconductor film
US9553201B2 (en) 2012-04-02 2017-01-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
US9553200B2 (en) 2012-02-29 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9553202B2 (en) 2014-05-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US9553204B2 (en) 2014-03-31 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US9553114B2 (en) 2013-10-18 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device with a color filter
US9552767B2 (en) 2013-08-30 2017-01-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9559208B2 (en) 2009-10-21 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
US9559105B2 (en) 2011-05-20 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US9559211B2 (en) 2010-07-30 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9564535B2 (en) 2014-02-28 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module
US9570116B2 (en) 2014-12-11 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
US9570622B2 (en) 2013-09-05 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9569713B2 (en) 2014-10-24 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, wireless sensor, and electronic device
US9570310B2 (en) 2013-04-04 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9576995B2 (en) 2014-09-02 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US9577107B2 (en) 2013-03-19 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and method for forming oxide semiconductor film
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
US9577446B2 (en) 2012-12-13 2017-02-21