US20090075121A1 - Apparatus and method for forming carbon protective layer - Google Patents

Apparatus and method for forming carbon protective layer Download PDF

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Publication number
US20090075121A1
US20090075121A1 US12205885 US20588508A US2009075121A1 US 20090075121 A1 US20090075121 A1 US 20090075121A1 US 12205885 US12205885 US 12205885 US 20588508 A US20588508 A US 20588508A US 2009075121 A1 US2009075121 A1 US 2009075121A1
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substrate
annular
shaped
generation source
plasma beam
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US12205885
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Naruhisa Nagata
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Fuji Electric Device Technology Co Ltd
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Fuji Electric Device Technology Co Ltd
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8408Processes or apparatus specially adapted for manufacturing record carriers protecting the magnetic layer
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587Mechanical means for changing the gas flow
    • C23C16/45591Fixed means, e.g. wings, baffles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/026Shields
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3321CVD [Chemical Vapor Deposition]

Abstract

An apparatus and method for forming a carbon protective layer on a substrate using a plasma CVD method allows a more uniform in-plane distribution of the carbon protective layer thickness. The apparatus includes an annular anode that generates a plasma beam and a disk-shaped shield disposed between the anode and the substrate. The anode, the shield, and the substrate are concentrically arranged so that a straight line connecting the centers of the anode and the substrate is perpendicular to the deposition surface of the substrate where the carbon protective layer is to be formed. The center of the shield is also on the straight line.

Description

    BACKGROUND
  • Examples of carbon protective layers used for coating sliding-resistant members or friction-resistant members include diamond-like carbon (DLC) films and graphite carbon films. Carbon protective layers are formed on magnetic recording layers of magnetic recording media to serve as sliding-resistant members to protect the magnetic recording layers from damage or corrosion induced by sliding and contact with magnetic heads. In recent years, DLC films formed by a plasma CVD method have been used. This is because a DLC film formed by the plasma CVD method is denser and harder than a film formed by a sputtering method. This feature is apparently due to the fact that the DLC film formed by the plasma CVD method is formed by hydrocarbon radicals, and a tetrahedral structure with a high three-dimensional rigidity is easily formed via hydrogen.
  • The increase in recording density is a requirement applied to magnetic recording media, and reducing the thickness of protective film and decreasing the distance between a head element and a magnetic recording layer is an effective means for meeting this requirement. When the film thickness is reduced, it is important to have a uniform in-plane distribution of the film thickness. Thus, even where the in-plane average value of film thickness is sufficient to obtain the predetermined electromagnetic conversion characteristic and the thickness is sufficient to ensure reliability, such as corrosion resistance, where the in-plane distribution of film thickness is nonuniform, the predetermined electromagnetic conversion characteristic cannot be obtained in thick places, whereas the reliability such as corrosion resistance cannot be ensured in thin places.
  • A method of disposing an appropriate shield within a plasma CVD chamber when a DLC film is formed by a plasma CVD method with the object of obtaining a uniform in-plane distribution of protective film thickness has been investigated. See for example Japanese Patent Applications Laid-open Nos. 2001-148118 and 2003-30823. With the usual plasma CVD method, the film thickness in the central zone of a substrate for film formation tends to increase because plasma irradiating the substrate is concentrated in the central zone. Disposing a shield in the vicinity of the central zone can make the film thickness more uniform. See, for example, paragraph 0010 of Japanese Patent Application Laid-open No. 2003-30823.
  • Further improvements, however, are needed to obtain a more uniform film thickness. Accordingly, there still remains a need for forming a carbon protective layer using a plasma CVD method, which makes it possible to bring the in-plane distribution of film thickness close to a uniform distribution.
  • SUMMARY OF THE INVENTION
  • The present invention relates to an apparatus and a method for forming a carbon protective layer on a substrate, such as for a magnetic recording medium, by a plasma CVD method.
  • One aspect of the present invention is an apparatus for forming a carbon protective layer on a substrate by a plasma CVD method. The apparatus includes an annular-shaped plasma beam generation source and a disk-shaped shield. The annular-shaped plasma beam generation source is configured to be spaced from and disposed parallel to a deposition surface of the substrate, where the carbon protective layer is to be formed. The disk-shaped shield is spaced from the annular-shaped plasma beam generation source and configured to be positioned between the annular-shaped plasma beam generation source and the substrate. The disk-shaped shield is concentrically arranged with the annular-shaped plasma beam generation source and the deposition surface of the substrate so that a straight line connecting a center of the annular plasma beam generation source and a center of the deposition surface of the substrate is perpendicular to the deposition surface of the substrate.
  • The disk-shaped shield has a radius equal to an overlap radius A, and a distance x between the disk-shaped shield and the annular-shaped plasma beam generation source satisfies the equation x=[{R/(R+A)}+B]·L, where R is a radius of the plasma beam generation source, L is a distance between the annular-shaped plasma beam generation source and the deposition surface of the substrate, and B is a range of −0.1 or more to 0.1 or less.
  • Another aspect of the present invention is a method of forming a carbon protective layer on a substrate by a plasma CVD method. The method includes disposing the deposition surface of the substrate, where the carbon protective layer is to be formed, parallel to and spaced from the annular-shaped plasma beam generation source, and disposing the disk-shaped shield spaced from the annular-shaped plasma beam generation source between the annular-shaped plasma beam generation source and the substrate. The disk-shaped shield is concentrically arranged with the annular-shaped plasma beam generation source and the deposition surface of the substrate so that a straight line connecting a center of the annular plasma beam generation source and a center of the deposition surface of the substrate is perpendicular to the deposition surface of the substrate.
  • Another aspect of the present invention is a magnetic recording medium having a carbon protective layer formed by the apparatus or the method.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 schematically illustrates a sectional view of an apparatus for forming a carbon protective layer according to the present invention.
  • FIG. 2 explains the position and size of a disk-shaped shield of the apparatus of FIG. 1.
  • FIG. 3 explains the overlap radius A.
  • FIG. 4 illustrates the results obtained in Examples 1 to 3 and Comparative Examples 1 and 2.
  • DETAILED DESCRIPTION
  • Referring to FIG. 1, an apparatus 100 for forming a carbon protective layer using a plasma CVD method has an annular anode 101 that generates a plasma beam and a disk-shaped shield 102 disposed between the annular anode 101 and a substrate 103 for forming a film. The annular anode 101 and a deposition surface or region of the substrate, where the carbon protective film is to be formed, are parallel to each other and concentrically arranged so that a straight line connecting the centers of the anode and the deposition surface is perpendicular to the deposition surface. The center of the disk-shaped shield 102 is on the straight line and also concentrically arranged with the anode 101 and the substrate 103.
  • Benefits can be achieved in the apparatus 100 that features a combination of the annular anode 101 and the disk-shaped shield 102. By providing the disk-shaped shield 102, the concentration of plasma in the central zone of the substrate can be avoided and the in-plane distribution of film thickness can be made more uniform. By using the annular-shaped anode serving as a plasma beam generation source, the plasma density in the central zone can be decreased so that even more uniform in-plane distribution can be realized.
  • Further, by forming a magnetic recording medium comprising the substrate, which can be the base material thereof, and a magnetic recording layer disposed on the base material, it is possible to form a carbon protective layer on a magnetic recording layer with the apparatus 100. The present invention is intended to cover the magnetic recording medium.
  • FIG. 2 explains the position and size of the disk-shaped shield. The distance between the annular anode 101 and the deposition location of the substrate 103 is denoted by L, the distance between the annular anode 101 and the disk-shaped shield 102 is denoted by x, and the radius of the annular anode 101 is denoted by R. According to the results obtained in the below-described examples, the uniformity of in-plane distribution of film thickness can be improved when the distance x is obtained from the following Equation: x=[{R/(R+A)}+B]·L, while making the radius of the disk-shaped shield 102 equal to A, which represents a radius at the position on the substrate that is overlapped with the plasma beam (referred to hereinbelow as “overlap radius”) when no disk-shaped shield is provided, and B being a range (tolerance) of −0.1 or more to 0.1 or less.
  • The overlap radius is calculated in the following manner. First, a carbon protective layer is formed without providing a disk-shaped shield, and a thickness of the carbon protective layer on the substrate for film formation is measured. The film thickness distribution in the radial direction is plotted, as shown in FIG. 3, the difference in film thickness between the radial position of the outer circumferential portion of the central hole (referred to hereinbelow as the “innermost circumference”; for example, with a radius of 12.5 mm) and the radial position of the outer radial portion of the substrate (referred to hereinbelow as the “outermost circumference”) is taken as 100%, and the radial position in which the film thickness has changed by 30% with respect to that at the innermost circumference is taken as A. The broken-line portion of the film thickness distribution indicates a portion of the central hole. On the inside of the overlap radius A, the plasma beam overlaps as shown in FIG. 2, and the film thickness increases. Therefore, the film thickness reaches a maximum on the innermost circumference and a minimum on the outermost circumference, and usually the radial position in which the film thickness decreases by 30% with respect to that at the innermost circumference is taken as A.
  • With the apparatus 100 having the above configuration, the in-plane distribution of film thickness can be made more uniform, without decreasing the film formation rate. Examples will be described below. The results obtained in Examples 1 to 3 and Comparative Examples 1 and 2 are shown in FIG. 4.
  • In Example 1, in a hollow-cathode plasma CVD apparatus, the distance L between the anode 101 and the deposition location (i.e., surface) of the substrate 103 was set at 160 mm, the distance x between the anode 101 and the 102 shield was set at 115 mm, and the radius R of the anode 101 was set at 45 mm. The shield was made of stainless steel and had a thickness of 2 mm, and the electric potential thereof was a ground potential. The substrate 103 was made of aluminum and had a diameter of 95 mm and a thickness of 1.27 mm.
  • When a DLC film was formed on a magnetic recording medium formed to obtain a magnetic recording layer using the substrate 103, because the overlap radius A was 17.5 mm, the shield radius was set at 17.5 mm. Here, argon (30 sccm) was used as a discharge gas, and acetylene (30 sccm) was used as a raw material gas. Calculating the distance x using the Equation, the following value is obtained: x=(0.720±0.1) 160 (mm)=115±16 (mm). In the Example 1, x was set at 115 mm, thus satisfying the equation.
  • Under the above conditions, the film formation time was adjusted and a DLC film with a thickness of 2.5 nm in the intermediate circumferential portion was obtained. The “inner circumferential portion” means a region on the inner circumferential side in a data recording portion of a disk-shaped magnetic recording medium and generally indicates a region with a radius of about 20 mm in the case of a rated 3.5 inch substrate (substrate with a diameter of 95 mm). The “outer circumferential portion” means a region on the outer circumferential side in a data recording portion of a disk-shaped magnetic recording medium and generally indicates a region with a radius of about 40 mm in the case of a rated 3.5 inch substrate. The “intermediate circumferential portion” indicates a region between the “inner circumferential portion” and the “outer circumferential portion” and generally indicates a region with a radius of about 30 mm in the case of a rated 3.5 inch substrate.
  • The in-plane distribution of film thickness was measured with an optical surface inspection device. The film thickness was 2.5 nm in the intermediate circumferential portion, 2.5 nm in the inner circumferential portion, and 2.4 nm in the outer circumferential portion, and the radial distribution of film thickness (the ratio of the difference between the maximum value and minimum value divided by the value in the intermediate circumferential portion) was less than 6%, which is good.
  • In Example 2, a DLC film was formed under the same conditions as in Example 1, except that the distance x between the anode and the shield was set at 105 mm. The set distance x is still within the range of x=115±16 (mm), thus satisfying the Equation. The in-plane distribution of film thickness was measured with an optical surface inspection device. The film thickness was 2.5 nm in the intermediate circumferential portion, 2.53 nm in the inner circumferential portion, and 2.4 nm in the outer circumferential portion, and the radial distribution of film thickness was still less than 6%.
  • In Example 3, a DLC film was formed under the same conditions as in Example 1, except that the distance x between the anode and the shield was set at 125 mm. The set distance x is still within the range of x=115±16 (mm), thus satisfying the Equation. The in-plane distribution of film thickness was measured with an optical surface inspection device. The film thickness was 2.5 nm in the intermediate circumferential portion, 2.48 nm in the inner circumferential portion, and 2.4 nm in the outer circumferential portion, and the radial distribution of film thickness was still less than 6%.
  • In Comparative Example 1, a DLC film was formed under the same conditions as in Example 1, except that the distance x between the anode and the shield was set at 95 mm. The set distance x was outside the range of x=115±16 (mm), thus not satisfying the Equation. The in-plane distribution of film thickness was measured with an optical surface inspection device. The film thickness was 2.5 nm in the intermediate circumferential portion, 2.7 nm in the inner circumferential portion, and 2.4 nm in the outer circumferential portion, and the radial distribution of film thickness was more than 6%, which is worse than in Examples 1 to 3. This is apparently because the disk-shaped shield was too far from the substrate 103, and shielding of the plasma beam that tended to concentrate in the central zone of the substrate became insufficient.
  • In Comparative Example 2, a DLC film was formed under the same conditions as in Example 1, except that the distance x between the anode and the shield was set at 135 mm. The set distance x was outside the range of x=115±16 (mm), thus not satisfying the Equation. The in-plane distribution of film thickness was measured with an optical surface inspection device. The film thickness was 2.5 nm in the intermediate circumferential portion, 2.3 nm in the inner circumferential portion, and 2.4 nm in the outer circumferential portion, and the radial distribution of film thickness was more than 6%, which is worse than in Examples 1 to 3. This is apparently because the disk-shaped shield was too close to the substrate 103, and shielding of the plasma beam that tended to concentrate in the central zone of the substrate became excessive.
  • In Comparative Example 3, a DLC film was formed under the same conditions as in Example 1, except that the radius of the disk-shaped shield was set at 7.5 mm. The distance x calculated using the Equation was x=(0.857±0.1) 160 (mm)=137±16 (mm). Since the distance x was set at 115 mm, the Equation was not satisfied. The in-plane distribution of film thickness was measured with an optical surface inspection device. The film thickness was 2.5 nm in the intermediate circumferential portion, 2.7 nm in the inner circumferential portion, and 2.4 nm in the outer circumferential portion, and the radial distribution of film thickness was more than 6%, which is worse than in Examples 1 to 3. This is apparently because the disk-shaped shield was too small, and shielding of the plasma beam that tended to concentrate in the central zone of the substrate became insufficient.
  • In Comparative Example 4, a DLC film was formed under the same conditions as in Example 1, except that the radius of the disk-shaped shield was set at 27.5 mm. The distance x calculated using the Equation 1 was x=(0.621±0.1) 160 (mm)=99.3±16 (mm). Since the distance x was set at 115 mm, the Equation was satisfied. The in-plane distribution of film thickness was measured with an optical surface inspection device. The film thickness was 2.5 nm in the intermediate circumferential portion, 2.48 nm in the inner circumferential portion, and 2.4 nm in the outer circumferential portion, and the radial distribution of film thickness was less than 6%, which is good. But the film formation time necessary to form a film with a thickness of 2.5 nm was 1.9 times greater that in Example 1, thus decreasing productivity. This is apparently because, when the disk-shaped shield is too large, although the uniformity of the film thickness distribution in the radial direction is improved, the shielding effect decreased the overall deposition rate.
  • While the present invention has been particularly shown and described with reference to preferred embodiments, it will be understood by those skilled in the art that the foregoing and other changes in form and details can be made therein without departing from the spirit and scope of the present invention. All modifications and equivalents attainable by one versed in the art from the present disclosure within the scope and spirit of the present invention are to be included as further embodiments of the present invention. The scope of the present invention accordingly is to be defined as set forth in the appended claims.
  • This application is based on and claims priority to Japanese Patent Application 2007-242541 filed on 19 Sep. 2007. The disclosure of the priority application in its entirety, including the drawings, claims, and the specification thereof, is incorporated herein by reference.

Claims (8)

  1. 1. An apparatus for forming a carbon protective layer on a substrate by a plasma CVD method, the apparatus comprising:
    an annular-shaped plasma beam generation source configured to be spaced from and disposed parallel to a deposition surface of the substrate, where the carbon protective layer is to be formed; and
    a disk-shaped shield spaced from the annular-shaped plasma beam generation source and configured to be positioned between the annular-shaped plasma beam generation source and the substrate,
    wherein the disk-shaped shield is concentrically arranged with the annular-shaped plasma beam generation source and the deposition surface of the substrate so that a straight line connecting a center of the annular-shaped plasma beam generation source and a center of the deposition surface of the substrate is perpendicular to the deposition surface of the substrate.
  2. 2. The apparatus for forming a carbon protective layer according to claim 1, wherein the disk-shaped shield has a radius equal to an overlap radius A, and a distance x between the disk-shaped shield and the annular-shaped plasma beam generation source satisfies the equation x=[{R/(R+A)}+B]·L, where R is a radius of the annular-shaped plasma beam generation source, L is a distance between the annular-shaped plasma beam generation source and the deposition surface of the substrate, and B is a range of −0.1 or more to 0.1 or less.
  3. 3. A magnetic recording medium having a carbon protective layer formed according to the apparatus of claim 1.
  4. 4. A magnetic recording medium having a carbon protective layer formed according to the apparatus of claim 2.
  5. 5. A method of forming a carbon protective layer on a substrate by a plasma CVD method, the method comprising the steps of:
    disposing the substrate so that a deposition surface of the substrate, where the carbon protective layer is to be formed, is parallel to and spaced from an annular-shaped plasma beam generation source; and
    disposing a disk-shaped shield spaced from the annular plasma beam generation source between the annular-shaped plasma beam generation source and the substrate,
    wherein the disk-shaped shield is concentrically arranged with the annular-shaped plasma beam generation source and the deposition surface of the substrate so that a straight line connecting a center of the annular-shaped plasma beam generation source and a center of the deposition surface of the substrate is perpendicular to the deposition surface of the substrate.
  6. 6. The method according to claim 5, wherein the disk-shaped shield has a radius equal to an overlap radius A, and a distance x between the disk-shaped shield and the annular-shaped plasma beam generation source satisfies the equation x=[{R/(R+A)}+B]·L, where R is a radius of the annular-shaped plasma beam generation source, L is a distance between the annular-shaped plasma beam generation source and the deposition surface of the substrate, and B is a range of −0.1 or more to 0.1 or less.
  7. 7. A magnetic recording medium having a carbon protective layer formed according to the method of claim 5.
  8. 8. A magnetic recording medium having a carbon protective layer formed according to the method of claim 6.
US12205885 2007-09-19 2008-09-07 Apparatus and method for forming carbon protective layer Abandoned US20090075121A1 (en)

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JP2007242541A JP2009074118A (en) 2007-09-19 2007-09-19 Apparatus for forming protective layer
JP2007-242541 2007-09-19

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Cited By (1)

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US20080170327A1 (en) * 2007-01-12 2008-07-17 Showa Denko K.K. Method for forming carbon protective film and method for producing magnetic recording medium, magnetic recording medium and magnetic recording/reproducing apparatus

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Publication number Priority date Publication date Assignee Title
US5578130A (en) * 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
US5645698A (en) * 1992-09-30 1997-07-08 Advanced Energy Industries, Inc. Topographically precise thin film coating system

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KR100302457B1 (en) * 1999-04-06 2001-10-29 박호군 Diamond film deposition method
JP3644586B2 (en) 1999-11-19 2005-04-27 富士電機デバイステクノロジー株式会社 Magnetic recording medium and manufacturing method thereof
JP2003030823A (en) 2001-07-12 2003-01-31 Fuji Electric Co Ltd Method and device for manufacturing magnetic recording medium
US20030101935A1 (en) * 2001-12-04 2003-06-05 Walther Steven R. Dose uniformity control for plasma doping systems
US6776885B2 (en) * 2002-11-14 2004-08-17 International Business Machines Corporation Integrated plating and planarization apparatus having a variable-diameter counterelectrode

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US5578130A (en) * 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
US5645698A (en) * 1992-09-30 1997-07-08 Advanced Energy Industries, Inc. Topographically precise thin film coating system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080170327A1 (en) * 2007-01-12 2008-07-17 Showa Denko K.K. Method for forming carbon protective film and method for producing magnetic recording medium, magnetic recording medium and magnetic recording/reproducing apparatus
US7867579B2 (en) * 2007-01-12 2011-01-11 Showa Denko K.K. Method for forming carbon protective film and method for producing magnetic recording medium, magnetic recording medium and magnetic recording/reproducing apparatus

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US8389071B2 (en) 2013-03-05 grant
JP2009074118A (en) 2009-04-09 application
US20110229657A1 (en) 2011-09-22 application

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