US20070287215A1 - Method for fabricating semiconductor device - Google Patents
Method for fabricating semiconductor device Download PDFInfo
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- US20070287215A1 US20070287215A1 US11/798,676 US79867607A US2007287215A1 US 20070287215 A1 US20070287215 A1 US 20070287215A1 US 79867607 A US79867607 A US 79867607A US 2007287215 A1 US2007287215 A1 US 2007287215A1
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- film
- semiconductor wafer
- chips
- dicing
- vibrating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00865—Multistep processes for the separation of wafers into individual elements
- B81C1/00896—Temporary protection during separation into individual elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
Definitions
- the present invention relates to fabrication methods of a semiconductor device, and in particular to dicing methods thereof.
- Fabrication of a semiconductor device is typically made so that a great number of chips having various types of elements such as transistors are formed on a wafer and then dicing is performed to cut the wafer into chips.
- the wafer or the element may be broken to cause a decrease in the fabrication yield of the semiconductor device. For example, when blade dicing is performed, chipping sometimes occurs at the chip end. If this chipping reaches a region in the semiconductor device formed with the various types of elements such as transistors, the function of the semiconductor device is broken.
- FIG. 13A shows a cross section of a portion of a semiconductor wafer 11 .
- the semiconductor wafer 11 is provided with chips having various types of elements.
- the wafer 11 is cut (diced) along a cutting line L in a scribe region R, thereby separating chips.
- the scribe region R is provided between the chips and used for dicing.
- insulating films 12 are provided on both sides of the cutting line L, respectively.
- FIG. 13B shows how the semiconductor wafer 11 is being subjected to dicing by a blade 13 .
- the dicing is performed along the cutting line L located between the two insulating films 12 .
- the chipping is stopped by the insulating film 12 . That is to say, the chipping is hindered from advancing more inwardly than the insulating film 12 .
- the fabrication yield of the semiconductor device can be prevented from being degraded by chipping.
- dicing using a blade is performed with cleaning liquid (for example, water) supplied for removal of cutting fragments or other purposes.
- cleaning liquid for example, water
- a pressure from water is applied to the semiconductor wafer.
- the semiconductor device has a hollow portion
- a thin film covering the hollow portion is easily broken by water pressure.
- the challenge to be addressed is realization of a semiconductor which has a structure with a poor-strength portion and concurrently which can avoid such breakage.
- the present invention offers a reliable fabrication method of a semiconductor device which has a structure with a poor-strength portion such as a thin film covering a hollow portion.
- a first method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; the step (c) of forming a fixed film on the intermediate film; the step (d) of subjecting the semiconductor wafer to blade dicing to separate the chips; and the step (e) of removing, by etching each of the chips, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.
- the semiconductor device With the method for fabricating a semiconductor device according to the present invention, dicing is performed in the state in which the fixed film is stacked onto the sacrifice layer, and then the sacrifice layer is removed. Therefore, breakage of the fixed film in the dicing can be prevented.
- the semiconductor device can be fabricated which has a MEMS (Micro Electro Mechanical Systems) microphone structure provided with the vibrating film and the fixed film with the cavity interposed therebetween.
- MEMS Micro Electro Mechanical Systems
- the method further includes, before the step (d), the step of providing a protective film on the fixed film.
- the step of providing a protective film on the fixed film With this method, breakage of the fixed film in dicing can be prevented more reliably to improve the fabrication yield of the semiconductor device.
- the protective film is removed together with the sacrifice layer.
- an independent process step for removing the protective film does not have to be provided, so that the semiconductor device can be fabricated with an increase in the number of process steps suppressed.
- a second method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; the step (c) of forming a fixed film on the intermediate film; the step (d) of removing, by etching the semiconductor wafer, the sacrifice layer to provide a cavity between the vibrating film and the fixed film; and the step (e) of subjecting the semiconductor wafer to laser dicing to separate the chips.
- the MEMS microphone structure can be fabricated which is provided with the vibrating film and the fixed film with the cavity interposed therebetween.
- a surface protective tape is stuck onto the surface of the semiconductor wafer formed with the fixed film, and then the laser dicing is performed from the other-surface side of the semiconductor wafer.
- a dicing tape is stuck onto the surface of the semiconductor wafer opposite to the surface formed with the fixed film, and then the laser dicing is performed from the surface side thereof formed with the fixed film. Also in this case, dicing can be performed with the surface protective tape protecting the fixed film.
- laser dicing can be performed from either surface side of the semiconductor wafer.
- a metal film, a diffusion layer, an oxide film, or the like existing on either surface of the semiconductor wafer may reflect the laser, which would make it impossible to perform laser dicing.
- the laser radiation for dicing can be performed from either surface side of the semiconductor wafer, the surface to be radiated with a laser can be selected conveniently.
- the second method for fabricating a semiconductor device further includes, after the step (d) and before the step (e), the step of sticking a surface protective tape onto the surface of the semiconductor wafer formed with the fixed film, and then grinding the other surface of the semiconductor wafer, and in the step (e), the laser dicing is performed from the other-surface side of the semiconductor wafer.
- the surface protective tape can protect the fixed film.
- the necessity to stick respective tapes for back grinding and dicing can be eliminated to reduce the number of process steps.
- the step (e) includes: the substep of radiating the surrounding of each of the chips with a laser to form an altered layer surrounding each said chip; and the substep of applying a force to the semiconductor wafer to separate the chips along the altered layer.
- the intermediate layer, and the fixed film alter to produce the altered layer.
- the physical strength of the altered layer is degraded as compared with the physical strength before alteration, so that application of a force to the semiconductor wafer causes wafer cutting along the altered layer.
- a third method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; the step (c) of forming a fixed film on the intermediate film; the step (d) of removing, by etching the semiconductor wafer, the sacrifice layer to provide a cavity between the vibrating film and the fixed film; and the step (e) of providing, after the step (d), a protective film on the fixed film, and subjecting the resulting semiconductor wafer to blade dicing to separate the chips.
- the semiconductor wafer is subjected to dicing with the protective film preventing breakage of the fixed film.
- the semiconductor device can be reliably fabricated which has the structure provided with the vibrating film and the fixed film with the cavity interposed therebetween.
- the third method for fabricating a semiconductor device further includes, after the step (e), the step of removing the protective film with each of the chips held on a chip holder.
- the protective film can be removed reliably.
- the blade dicing is performed in the state in which a dicing tape is stuck onto the surface of the semiconductor wafer opposite to the surface formed with the fixed film, and the method further comprises, after the step (e), the step of removing the surface protective film from each of the chips which are held stuck onto the dicing tape.
- the protective film can be removed reliably, and concurrently moving the chip to the chip holder is eliminated.
- a fourth method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; the step (c) of forming a fixed film on the intermediate film; the step (d) of forming, from the fixed film side, a groove in portions of the fixed film, the intermediate film, and the semiconductor wafer, the groove surrounding each of the chips; the step (e) of removing, by etching the semiconductor wafer formed with the groove, the sacrifice layer to provide a cavity between the vibrating film and the fixed film; and the step (f) of grinding, after the step (e), the surface of the semiconductor wafer opposite to the surface formed with the groove until the ground surface reaches the groove, thereby separating the chips.
- the groove surrounding each of the chips is formed from the surface side of the semiconductor wafer formed with the fixed film.
- the groove is formed not to reach the other surface of the semiconductor wafer (formed to reach the halfway depth of the wafer), whereby the resulting semiconductor wafer is in the state in which the chips each containing the vibrating film and the like are connected to each other only at around the other surface of the wafer. Since dicing is performed with the sacrifice layer remaining, breakage of the fixed film during this step is prevented.
- the semiconductor wafer in the state described above is etched to remove the sacrifice layer, and then the other surface of the semiconductor wafer is ground (back grinding). This grinding is performed to reach the groove which extends from the surface thereof formed with the fixed film, thereby removing the portions of the semiconductor wafer which connect the chips. As a result, the wafer is cut into the separate chips. In the manner described above, the semiconductor device can be fabricated with breakage of the fixed film or the like avoided.
- the groove is formed a predetermined distance away from the vibrating film of each of the chips.
- the semiconductor wafer is also etched from the side surface of the groove and thus the function of the semiconductor device to be fabricated is affected.
- the groove is arranged so that it is spaced away from the vibrating film by a predetermined distance containing a margin in consideration of such etching of the side surface of the groove.
- the semiconductor device can be fabricated in which the fixed film is formed above the cavity.
- removal of the sacrifice layer after dicing, dicing by a laser, provision of the protective film on the fixed film, or back grinding after formation of the groove with the halfway depth can prevent the fixed film from being broken by a pressure from cleaning liquid applied during dicing, and thereby the semiconductor device can be fabricated reliably.
- the semiconductor wafer can be formed into chips while both of breakage of the portion having a poor-strength structure during dicing and the occurrence of contaminants are prevented. Accordingly, the method is useful particularly in fabrication of a MEMS microphone chip or the like.
- FIG. 1 is a view illustrating the structure of a semiconductor device (a MEMS microphone chip 100 ) fabricated in each embodiment of the present invention.
- FIGS. 2A to 2E are views illustrating a method for fabricating a semiconductor device according to a first embodiment of the present invention.
- FIGS. 3A and 3B are views illustrating a method for fabricating a semiconductor device according to a modification of the first embodiment of the present invention.
- FIGS. 4A to 4C are views illustrating a method for fabricating a semiconductor device according to a second embodiment of the present invention.
- FIGS. 5A and 5B are views following FIGS. 4A to 4C , which illustrate the method for fabricating a semiconductor device according to the second embodiment of the present invention.
- FIGS. 6A to 6C are views illustrating a method for fabricating a semiconductor device according to a modification of the second embodiment of the present invention.
- FIGS. 7A to 7C are views illustrating a method for fabricating a semiconductor device according to a third embodiment of the present invention.
- FIGS. 8A and 8B are views following FIGS. 7A to 7C , which illustrate the method for fabricating a semiconductor device according to the third embodiment of the present invention.
- FIGS. 9A to 9C are views illustrating other process steps of the method for fabricating a semiconductor device according to the third embodiment of the present invention.
- FIGS. 10A and 10B are views illustrating a method for fabricating a semiconductor device according to a fourth embodiment of the present invention.
- FIGS. 11A to 11C are views following FIGS. 10A and 10B , which illustrate the method for fabricating a semiconductor device according to the fourth embodiment of the present invention.
- FIG. 12 is a view illustrating the distance M between a cutting line L and a sacrifice layer 113 in the method for fabricating a semiconductor device according to the fourth embodiment of the present invention.
- FIGS. 13A and 13B are views illustrating a conventional technique of dicing.
- FIG. 14 is a view illustrating contaminants 201 which may occur within a cavity 102 a of the MEMS microphone chip 100 and which can be reduced in the present invention.
- the MEMS microphone chip refers to a semiconductor device having a structure shown in FIG. 1 .
- the MEMS microphone chip 100 is fabricated using a semiconductor substrate 101 .
- the semiconductor substrate 101 has a through hole 101 a, and on the semiconductor substrate 101 , an intermediate film 102 is provided which has a cavity 102 a located above the through hole 101 a. Also, above the through hole 101 a, a vibrating film 103 is provided to stop up the through hole 101 a. Furthermore, a fixed film 104 is provided to cover the intermediate film 102 and the cavity 102 a.
- the cavity 102 a is interposed between the vibrating film 103 and the fixed film 104 .
- a portion of the fixed film 104 located over the cavity 102 a is provided with a sound hole 104 a, and also the vibrating film 103 is provided with a hole 103 b.
- the sound hole 104 a through the fixed film 104 has the function of taking in sound from the outside of the MEMS microphone chip 100 to the inside of the MEMS microphone chip 100 .
- the hole 103 b of the vibrating film 103 has the function of matching atmospheric pressure of the inside to that of the through hole area.
- contaminants may occur within the cavity 102 a.
- the contaminants refer to, for example, fragments of the semiconductor wafer 101 , fragments of a dicing tape, broken pieces of a blade used for dicing, or the like, which are caused in fabrication processes of the MEMS microphone chip 100 . If such contaminants 201 are smaller than the hole 103 b or the sound hole 104 a, they may go, as shown in FIG. 14 , from the hole 103 b or the sound hole 104 a into the cavity 102 a during fabrication processes of the MEMS microphone chip 100 , and remain in the cavity 102 a even after completion of the fabrication processes.
- FIG. 14 shows the contaminants 201 adhering onto the vibrating film 103 , it is also conceivable that they adhere to the side surfaces of the fixed film 104 and the intermediate film 102 , and the side surface of the semiconductor wafer 101 .
- the performance of the MEMS microphone chip 100 is degraded.
- the frequency response thereof as a microphone is degraded, and thereby it becomes difficult for the chip to ensure a necessary quality. This causes degradation of the fabrication yield of the MEMS microphone chip 100 .
- FIGS. 2A to 2E show a fabrication method of the MEMS microphone chip 100 according to the first embodiment.
- a stack material film 103 a to be formed into the vibrating film 103 is formed on one side of the semiconductor wafer 101 (referred hereinafter to as a front surface).
- the stack material film 103 a may have a structure made by stacking, for example, a SiN film, a PS (Poly Silicon) film, a TEOS (Tetraetylorthosilicate) film, and a SiN film in this order from bottom to top.
- an etching stopper film 111 of, for example, a SiO 2 film is formed to cover the stack material film 103 a.
- the etching stopper film 111 has a pattern corresponding to the etching shape of the vibrating film 103 .
- an oxide film 112 is formed on the surface of the semiconductor wafer 101 opposite to the surface formed with the stack material film 103 a (referred hereinafter to as a back surface).
- FIG. 2A also shows a cutting line L along which the dicing is to be performed in a later process. By the dicing along the cutting line L, an area containing one stack-material film 103 a is formed into one chip. Although only one structure is shown in FIG. 2A , a plurality of such structures to be formed into chips, respectively, are simultaneously formed on the semiconductor wafer 101 .
- etching is performed using the etching stopper film 111 as a mask to form the stack material film 103 a into the vibrating film 103 with the shape shown in FIG. 2B . It is sufficient that, during this step, for example, dry etching with a fluorine-based gas is performed on the SiN film and wet etching with a hydrofluoric acid-based solvent is performed on the PS film.
- the intermediate film 102 having a sacrifice layer 113 on the vibrating film 103 is formed on the semiconductor wafer 101 . Further, the fixed film 104 is formed to cover the sacrifice layer 113 and the intermediate film 102 .
- the sacrifice layer 113 and the intermediate film 102 are formed of, for example, BPSG (Boron Phosphorous Silicate Glass), and the fixed film 104 is formed of a stacked film having the same composition as the vibrating film 103 . That is to say, the fixed film 104 of the first embodiment has a structure made by stacking a SiN film, a PS film, a TEOS film, and a SiN film in this order from bottom to top.
- BPSG Bipolar Phosphorous Silicate Glass
- the intermediate film 102 and the sacrifice layer 113 are simultaneously formed as one layer, and thereafter only a portion of the layer located on the vibrating film 103 is removed as the sacrifice layer 113 .
- their formation procedure is not limited to this, and it is conceivable that the intermediate film 102 and the sacrifice layer 113 are formed separately. In this case, different materials may be used for them.
- the semiconductor wafer 101 is subjected to back grinding.
- the back surface of the semiconductor wafer 101 (the surface thereof opposite to the surface formed with the vibrating film 103 ) is ground to thin the semiconductor wafer 101 .
- This process is performed with a BG (back grinding) tape 114 stuck onto the fixed film 104 .
- BG tape 114 use may be made of, for example, a polyethylene tape with acrylic adhesive applied thereto.
- a mask 115 of a silicon oxide film or the like is formed on the back surface of the semiconductor wafer 101 , and the semiconductor wafer 101 is etched using this mask. Thereby, the semiconductor wafer 101 is formed with the through hole 101 a extending from the back surface, so that the vibrating film 103 is exposed with the surface facing the through hole 101 a.
- FIG. 2E shows the state of the area after dicing which contains about two chips 100 a.
- the dicing tape 116 use may be made of, for example, a polyolefin tape with acrylic adhesive applied thereto.
- Such dicing is performed while, for example, water for cleaning is being supplied in order to remove cutting fragments.
- the fixed film 104 is thin, but it is stuck onto the sacrifice layer 113 . Thus, even though the fixed film 104 receives a pressure from supplied water, it is never broken easily.
- the dicing tape 116 is peeled off, and etching is performed in the state of the chip 100 a to remove the sacrifice layer 113 .
- the remaining space serves as the cavity 102 a.
- the structure of the MEMS microphone chip 100 shown in FIG. 1 can be provided. Note that in this etching, HF can be used as an etching solution.
- dicing for forming the wafer into chips can be performed before removal of the sacrifice layer 113 to prevent breakage of the fixed film 104 . Then, the sacrifice layer 113 is removed after this dicing, and eventually the semiconductor device (the MEMS microphone chip 100 ) having the structure in which the vibrating film 103 and the fixed film 104 interpose the cavity 102 a can be fabricated with good yield.
- the cutting fragments occurring in the dicing process are prevented from remaining, as the contaminants 201 as shown in FIG. 14 , within the cavity 102 a.
- fragments appear from the semiconductor wafer 101 , the intermediate film 102 , the dicing tape 116 , and the like, and in some cases, broken pieces of a dicing blade appear as the fragments.
- Such fragments may be smaller than the hole 103 b or the sound hole 104 a. If the sacrifice layer 113 is not provided in the device, it is conceivable that the fragments will enter the cavity 102 a. Thus, the contaminants 201 occurring in the finished MEMS microphone chip 100 as shown in FIG. 14 degrade the quality of the device.
- the sacrifice layer 113 still remains in dicing. Therefore, the occurrence of the contaminants 201 shown in FIG. 14 is prevented. This results in improvement of quality and fabrication yield of the MEMS microphone chip 100 .
- the back grinding of the semiconductor wafer 101 is performed after formation of the fixed film 104 and before formation of the through hole 101 a.
- the back grinding can also be performed before formation of the vibrating film 103 shown in FIG. 2A .
- formation of the vibrating film 103 is made as in the case of FIG. 2A .
- the back grinding may be performed after formation of the fixed film 104 and subsequent formation of the through hole 101 a.
- the MEMS microphone chip 100 can also be fabricated in the order of process steps differing from that shown in FIGS. 2A to 2E .
- FIGS. 3A and 3B are views showing characteristic processes in this modification.
- the steps illustrated in FIGS. 2A to 2D are carried out.
- a protective film 117 is formed on the fixed film 104 , and the dicing tape 116 is stuck onto the back surface of the semiconductor wafer 101 .
- the semiconductor wafer 101 as well as the protective film 117 is subjected to blade dicing along the cutting line L to provide the chips 100 a as shown in FIG. 3B .
- the protective film 117 further reliably prevents breakage of the fixed film 104 , so that the fabrication yield of the MEMS microphone chip 100 can be improved.
- the protective film 117 can be formed by using acrylic or the like as the material.
- the protective film 117 is removed. This removal can also be made after dicing and as an independent step for the removal of the protective film 117 . In this case, after removal of the protective film 117 , etching is performed to remove the sacrifice layer 113 , and then the semiconductor device shown in FIG. 1 can be provided.
- the protective film 117 can also be removed simultaneously with an etching for removing the sacrifice layer 113 .
- the semiconductor device shown in FIG. 1 can be provided with an increase in the number of process steps suppressed.
- FIGS. 4A to 4C , 5 A, and 5 B are views illustrating fabrication steps of the semiconductor device of the second embodiment.
- FIGS. 2A to 2D process steps shown in FIGS. 2A to 2D are carried out in the same manner as those in the first embodiment.
- the semiconductor wafer 101 as shown in FIG. 2D can be provided which has a plurality of structures serving as chips, respectively.
- the semiconductor wafer 101 is subjected to an etching process to remove the respective sacrifice layers 113 from the structures still in the wafer state.
- the remaining spaces serve as the cavities 102 a.
- the cutting line L along which dicing is to be performed later is shown, and by the later dicing, the region surrounded with the cutting line L is formed into one chip.
- a region in the semiconductor wafer 101 containing about two chips is shown in FIG. 4A .
- a laser 118 for dicing is radiated onto the cutting line L of the semiconductor wafer 101 from the back-surface side. This alters the portions of the semiconductor wafer 101 , the intermediate film 102 , and the fixed film 104 which are radiated with the laser 118 (in the vicinity of the cutting line L), thereby producing altered layers 202 which have degraded physical strengths.
- FIG. 4C shows the expanding in which the dicing tape 116 is pulled in the direction indicated by the arrow F.
- the MEMS microphone chip 100 as shown in FIG. 1 can be fabricated.
- each of the chips separated has the altered layer 202 remaining around itself. If the output of the radiated laser is 1 to 10 W, the width K of the remaining altered layer 202 is about 1 to 5 ⁇ m.
- FIGS. 4B and 4C show the state of the wafer in which the entire portions of the semiconductor wafer 101 , the intermediate film 102 , and the fixed film 104 contained in the laser-radiated cutting line L have been changed into the altered layers 202 .
- an alternative state may be formed in which only a limited area is changed into the altered layer 202 and a portion left without being altered is also present. It is sufficient that the altered layer 202 is formed by such an amount that the chips 100 are separated from each other by the expanding shown in FIG. 4C .
- the altered layer 202 is typically made of a polycrystalline layer.
- a wafer of single-crystal silicon can be used as the semiconductor wafer 101 in the second embodiment, and in this case, the crystal structure of the laser-radiated portion is altered to produce the altered layer 202 made of a polycrystalline layer.
- Single-crystal silicon ideally has a diamond lattice structure in which all atoms are regularly arranged.
- a crystal structure in which atoms are regularly arranged is only locally observed, and a great number of such local crystal structures gather to produce the polycrystalline layer. Therefore, the polycrystalline layer does not have a regular arrangement ranging widely. Accordingly, laser radiation reduces the region having a regular atom arrangement.
- Such a difference between single crystal and polycrystal can be identified by, for example, Raman spectroscopy.
- the laser radiation and the laser dicing by the expanding as described above are performed without supplying any cleaning water. Therefore, the fixed film 104 above the cavity 102 a is never broken by a pressure from the cleaning water or the like.
- the dicing conducted by laser dicing can successfully avoid breaking the fixed film 104 by a pressure from the cleaning water.
- the yield obtained in fabricating the MEMS microphone chip 100 can be improved.
- a surface protective tape 119 may be stuck onto the fixed film 104 as shown in FIG. SA. Thereafter, the laser 118 is radiated from the back-surface side of the semiconductor wafer 101 . Moreover, when the dicing tape 116 is stuck onto the back surface of the semiconductor wafer 101 and the surface protective tape 119 is peeled off, expanding can be conducted in the same manner as shown in FIG. 4C . Such use of the surface protective tape 119 can prevent the fixed film 104 and the like from being damaged in dicing, and thereby the MEMS microphone chip 100 can be fabricated more reliably. Furthermore, the surface protective tape 119 can prevent the contaminants 201 from entering the cavity 102 a (see FIG. 14 ).
- the dicing tape 116 may be stuck onto the back surface of the semiconductor wafer 101 as shown in FIG. 5B .
- the laser 118 is radiated from the front-surface side of the semiconductor wafer 101 .
- expanding as shown in FIG. 4C is also conducted to cut the semiconductor wafer 101 along the portion altered by the laser radiation. Thereby, the wafer can be formed into chips.
- the laser radiation can be conducted from either the front- or back-surface side of the semiconductor wafer 101 . Also in the case shown in FIGS. 5A and 5B , laser radiation produces an altered layer, but its illustration is omitted.
- the laser 118 may then be reflected. In the case where the laser is thus reflected, the laser dicing is difficult to perform.
- the laser radiation can be made from either side of the semiconductor wafer 101 . Therefore, if either one of the front and back surfaces of the wafer does not have an oxide film, a metal film, or the like, chip formation by laser dicing can be made.
- the respective components in the second embodiment can be made of the same materials as those used in the first embodiment.
- a chemical solution used for etching is also the same as that used in the first embodiment.
- FIGS. 6A to 6C are views illustrating semiconductor device fabrication steps according to this modification.
- this modification like the first embodiment, the procedure up to formation of the fixed film 104 is first carried out to provide the structure shown in FIG. 2B .
- a mask 115 is formed on the back surface of the semiconductor wafer 101 , and the semiconductor wafer 101 is etched from the back-surface side. Thereby, a through hole 101 b is formed, so that the vibrating film 103 is exposed with the back surface facing the through hole 101 b. This state is shown in FIG. 6A .
- the sacrifice layer 113 is removed by etching.
- the remaining space serves as the cavity 102 a.
- the surface protective tape 119 is stuck onto the fixed film 104 , and then the back surface of the semiconductor wafer 101 is ground (back grinding is performed). This thins the semiconductor wafer 101 . That is to say, when this modification is compared with the second embodiment, the step of removing the sacrifice layer 113 and the step of performing a back grinding are carried out in the reverse order.
- the same laser radiation as that shown in FIG. 5A is conducted. Thereby, the portion radiated with the laser 118 is altered to have a physically poor strength. Further, like FIG. 4C , after the dicing tape 116 is stuck and the surface protective tape 119 is peeled off, expanding is conducted. Thereby, the semiconductor wafer 101 , the intermediate film 102 , and the fixed film 104 are cut at the portion radiated with the laser 118 . As a result of this, individual chips can be fabricated which each contain the structure having the fixed film 104 over the vibrating film 103 with the cavity 102 a interposed therebetween.
- the surface protective tape 119 can be used to carry out the two processes, that is, the back grinding and the laser radiation.
- the number of tapes used can be decreased.
- the numbers of tape-sticking and -peeling steps can also be decreased. As a result of this, simplification of the fabrication processes and cost reduction can be made.
- FIGS. 7A to 7C , 8 A, and 8 B are views illustrating a method for fabricating a semiconductor device according to the third embodiment.
- process steps shown in FIGS. 2A to 2D are carried out in the same manner as the first embodiment.
- the semiconductor wafer 101 as shown in FIG. 2D can be provided which has a plurality of structures having the fixed film 104 formed over the vibrating film 103 with the sacrifice layer 113 interposed therebetween.
- the semiconductor wafer 101 is subjected to an etching process to remove the respective sacrifice layers 113 from the structures still in the wafer state.
- the remaining spaces serve as the cavities 102 a.
- the cutting line L along which dicing is to be performed later is also shown, and about two regions in the wafer 101 to be formed into chips, respectively, by dicing are also shown.
- a protective film 117 is formed on the fixed film 104 . It is sufficient that this film is made of, for example, acrylic. Then, the dicing tape 116 is stuck onto the back surface of the semiconductor wafer 101 .
- blade dicing is performed on the semiconductor wafer 101 as well as the protective film 117 .
- the protective film 117 is formed on the fixed film 104 to prevent the fixed film 104 from being broken by a pressure from cleaning water that accompanies the dicing.
- the protective film 117 having been formed avoids the occurrence of contaminants 201 within the cavity 102 a as shown in FIG. 14 .
- the protective film 117 is removed, and then the MEMS microphone chip 100 identical to the structure in FIG. 1 can be provided. It is sufficient that for removal of the protective film 117 , for example, the chip provided by the dicing is taken off from the dicing tape 116 and moved to a chip holder 120 as shown in FIG. 8A , and then cleaning or the like with IPA (isopropyl alcohol) or the like is performed on the chip. This enables more reliable cleaning.
- IPA isopropyl alcohol
- the chips held stuck onto the dicing tape 116 can also be subjected to IPA cleaning. This case has an advantage that a more simple process can be provided since moving the chip to the chip holder is eliminated.
- the semiconductor device having the structure in which the fixed film 104 is formed over the vibrating film 103 with the cavity 102 a interposed therebetween, specifically, the MEMS microphone chip 100 can be fabricated with good yield. Moreover, prevention of the occurrence of contaminants can attain improvement of the quality and yield of the device.
- back grinding may be performed before formation of the vibrating film 103 .
- FIGS. 9A to 9C are views illustrating process steps carried out in this case.
- the mask 115 is provided on the back surface of the semiconductor wafer 101 . Then, etching using this mask is performed to form the through hole 101 b.
- the protective film 117 is formed on the fixed film 104 .
- the BG tape 114 is stuck onto the protective film 117 , and the resulting semiconductor wafer 101 is subjected to back grinding.
- the semiconductor wafer 101 is thinned from the back-surface side.
- the dicing tape 116 is stuck and blade dicing is performed in the same manner as shown in FIGS. 7B and 7C . Removal of the protective film 117 is also made as described above.
- FIGS. 10A , 10 B, and 11 A to 11 C are views illustrating the method for fabricating a semiconductor device according to the fourth embodiment.
- process steps up to formation of the fixed film 104 are carried out in the same manner as those in the first embodiment, and thereby the structure shown in FIG. 2B is provided. That is to say, the structure is provided in which the vibrating film 103 is formed on the semiconductor wafer 101 and the fixed film 104 is formed over the vibrating film 103 with the sacrifice layer 113 interposed therebetween. At this point in time, back grinding has not been conducted yet.
- the mask 115 is formed on the back surface of the semiconductor wafer 101 (the surface of the wafer opposite to the surface formed with the vibrating film 103 ), and the semiconductor wafer 101 is etched from the back-surface side. Thereby, the through hole 101 b is formed, so that the vibrating film 103 is exposed with the back surface facing the through hole 101 b.
- blade dicing is performed from the front-surface side of the semiconductor wafer 101 .
- this blade dicing is performed from the front-surface side to provide a groove 122 and concurrently to leave, around the back surface of the semiconductor wafer 101 , a portion of the semiconductor wafer 101 serving as a thin connection portion 121 .
- regions of the semiconductor wafer 101 to be formed into chips are in the state in which they are connected to each other by the connection portions 121 made by leaving thin portions of the semiconductor wafer 101 .
- the semiconductor wafer 101 formed with the groove 122 is subjected to an etching process to remove the sacrifice layer 113 .
- the remaining space serves as the cavity 102 a.
- the BG tape 114 is stuck onto the fixed film 104 , and then the back surface of the semiconductor wafer 101 is ground. Such back grinding is performed at least until the connection portion 121 is ground away and the grinding reaches the groove 122 . Thereby, the regions to serve as the individual chips, which are connected by the connection portion 121 , are separated from each other, and thus the MEMS microphone chip 100 identical to that shown in FIG. 1 can be fabricated.
- the dicing tape 116 is stuck to come into contact with the back surfaces of the individual chips. Then, by peeling off the BG tape 114 , transfer to the dicing tape 116 can be made.
- the groove 122 is formed from the front-surface side of the semiconductor wafer 101 to surround the region which contains the vibrating film 103 and the fixed film 104 and which is to serve as a chip. Then, the sacrifice layer 113 is removed, and thereafter back grinding is performed from the back-surface side of the semiconductor wafer 101 .
- a semiconductor device like the MEMS microphone chip 100 can be fabricated while breakage of the fixed film 104 is prevented. Moreover, the occurrence of contaminants in the dicing process is prevented to attain improvement of the quality and fabrication yield of the device.
- the side surface of the groove 122 can also be etched to increase the width of the groove 122 .
- the etching can proceed from the cutting line L up to the side-surface etching position E. If such trouble arises, there is a possibility that the trouble affects the function of the semiconductor device (the MEMS microphone chip 100 ) to be fabricated.
- the distance M from the cutting line L to the sacrifice layer 113 that will be the cavity 102 a later is set to allow an adequate margin in consideration of the etched amount of the side surface of the groove 122 by the etching process.
- the side surface of the groove 122 is etched to, for example, the side-surface etching position E, the function of the semiconductor device to be fabricated can avoid being affected by this trouble.
Abstract
Description
- This application claims priority under 35 U.S.C. §119 on Patent Application No. 2006-160927 filed in Japan on Jun. 9, 2006, and Patent Application No. 2007-001227 filed in Japan on Jan. 9, 2007, the entire contents of which are hereby incorporated by reference.
- (a) Fields of the Invention
- The present invention relates to fabrication methods of a semiconductor device, and in particular to dicing methods thereof.
- (b) Description of Related Art
- Fabrication of a semiconductor device is typically made so that a great number of chips having various types of elements such as transistors are formed on a wafer and then dicing is performed to cut the wafer into chips. In thus performing a dicing, the wafer or the element may be broken to cause a decrease in the fabrication yield of the semiconductor device. For example, when blade dicing is performed, chipping sometimes occurs at the chip end. If this chipping reaches a region in the semiconductor device formed with the various types of elements such as transistors, the function of the semiconductor device is broken.
- Various techniques for avoiding such breakage in dicing have been studied before.
- As one example of the techniques, a semiconductor wafer dicing method disclosed in Japanese Patent No. 3500813 will now be described with reference to
FIGS. 13A and 13B . -
FIG. 13A shows a cross section of a portion of asemiconductor wafer 11. Although not particularly shown, thesemiconductor wafer 11 is provided with chips having various types of elements. Thewafer 11 is cut (diced) along a cutting line L in a scribe region R, thereby separating chips. The scribe region R is provided between the chips and used for dicing. In this cross section, in the scribe region R on thesemiconductor wafer 11,insulating films 12 are provided on both sides of the cutting line L, respectively. -
FIG. 13B shows how thesemiconductor wafer 11 is being subjected to dicing by ablade 13. The dicing is performed along the cutting line L located between the twoinsulating films 12. During this dicing, even if the surface of thewafer 11 becomes chipped (achipped shape 14 is created), the chipping is stopped by theinsulating film 12. That is to say, the chipping is hindered from advancing more inwardly than theinsulating film 12. Thus, the fabrication yield of the semiconductor device can be prevented from being degraded by chipping. - In a typical dicing process, however, if a structure formed on a semiconductor wafer has a portion with a poor strength, the portion will be broken. This may result in extremely bad fabrication yield.
- In general, dicing using a blade is performed with cleaning liquid (for example, water) supplied for removal of cutting fragments or other purposes. Thus, during dicing, a pressure from water is applied to the semiconductor wafer. As a result of this, if a portion with a poor strength is present in the structure formed in the semiconductor wafer, this portion is likely to be damaged by the water pressure.
- Particularly, in the case where the semiconductor device has a hollow portion, it is conceivable that a thin film covering the hollow portion is easily broken by water pressure. Hence, the challenge to be addressed is realization of a semiconductor which has a structure with a poor-strength portion and concurrently which can avoid such breakage.
- In view of the foregoing, the present invention offers a reliable fabrication method of a semiconductor device which has a structure with a poor-strength portion such as a thin film covering a hollow portion.
- A first method for fabricating a semiconductor device according to the present invention includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; the step (c) of forming a fixed film on the intermediate film; the step (d) of subjecting the semiconductor wafer to blade dicing to separate the chips; and the step (e) of removing, by etching each of the chips, the sacrifice layer to provide a cavity between the vibrating film and the fixed film.
- With the method for fabricating a semiconductor device according to the present invention, dicing is performed in the state in which the fixed film is stacked onto the sacrifice layer, and then the sacrifice layer is removed. Therefore, breakage of the fixed film in the dicing can be prevented. As a result of this, for example, the semiconductor device can be fabricated which has a MEMS (Micro Electro Mechanical Systems) microphone structure provided with the vibrating film and the fixed film with the cavity interposed therebetween.
- Preferably, the method further includes, before the step (d), the step of providing a protective film on the fixed film. With this method, breakage of the fixed film in dicing can be prevented more reliably to improve the fabrication yield of the semiconductor device.
- Preferably, in the step (e), the protective film is removed together with the sacrifice layer. With this method, an independent process step for removing the protective film does not have to be provided, so that the semiconductor device can be fabricated with an increase in the number of process steps suppressed.
- Next, a second method for fabricating a semiconductor device according to the present invention includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; the step (c) of forming a fixed film on the intermediate film; the step (d) of removing, by etching the semiconductor wafer, the sacrifice layer to provide a cavity between the vibrating film and the fixed film; and the step (e) of subjecting the semiconductor wafer to laser dicing to separate the chips.
- With this method, even after removal of the sacrifice layer, the fixed film provided above the cavity is never broken in dicing because laser dicing is performed without supplying cleaning water. As a result of this, the MEMS microphone structure can be fabricated which is provided with the vibrating film and the fixed film with the cavity interposed therebetween.
- Preferably, in the second method for fabricating a semiconductor device, in the step (e), a surface protective tape is stuck onto the surface of the semiconductor wafer formed with the fixed film, and then the laser dicing is performed from the other-surface side of the semiconductor wafer.
- With this method, since dicing can be performed with the surface protective tape protecting the fixed film, breakage of the fixed film can be prevented more reliably.
- In addition, preferably, in the step (e), a dicing tape is stuck onto the surface of the semiconductor wafer opposite to the surface formed with the fixed film, and then the laser dicing is performed from the surface side thereof formed with the fixed film. Also in this case, dicing can be performed with the surface protective tape protecting the fixed film.
- As described above, laser dicing can be performed from either surface side of the semiconductor wafer. In the region (scribe lane) of the semiconductor wafer to be subjected to dicing, a metal film, a diffusion layer, an oxide film, or the like existing on either surface of the semiconductor wafer may reflect the laser, which would make it impossible to perform laser dicing. However, since the laser radiation for dicing can be performed from either surface side of the semiconductor wafer, the surface to be radiated with a laser can be selected conveniently.
- Preferably, the second method for fabricating a semiconductor device further includes, after the step (d) and before the step (e), the step of sticking a surface protective tape onto the surface of the semiconductor wafer formed with the fixed film, and then grinding the other surface of the semiconductor wafer, and in the step (e), the laser dicing is performed from the other-surface side of the semiconductor wafer.
- With this method, in both of the step of dicing and the step of grinding the surface of the semiconductor wafer opposite to the surface formed with the fixed film (back grinding), the surface protective tape can protect the fixed film. As a result of this, the necessity to stick respective tapes for back grinding and dicing can be eliminated to reduce the number of process steps.
- Preferably, the step (e) includes: the substep of radiating the surrounding of each of the chips with a laser to form an altered layer surrounding each said chip; and the substep of applying a force to the semiconductor wafer to separate the chips along the altered layer.
- In the laser-radiated portions of the semiconductor wafer, the intermediate layer, and the fixed film, their respective materials alter to produce the altered layer. The physical strength of the altered layer is degraded as compared with the physical strength before alteration, so that application of a force to the semiconductor wafer causes wafer cutting along the altered layer. Thus, by providing the altered layer by laser radiation conducted to surround the respective chips and then applying a force to the semiconductor wafer, the chips can be separated from each other. The laser dicing can be performed in the manner described above.
- A third method for fabricating a semiconductor device according to the present invention includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; the step (c) of forming a fixed film on the intermediate film; the step (d) of removing, by etching the semiconductor wafer, the sacrifice layer to provide a cavity between the vibrating film and the fixed film; and the step (e) of providing, after the step (d), a protective film on the fixed film, and subjecting the resulting semiconductor wafer to blade dicing to separate the chips.
- With the third method for fabricating a semiconductor device according to the present invention, the semiconductor wafer is subjected to dicing with the protective film preventing breakage of the fixed film. Thus, the semiconductor device can be reliably fabricated which has the structure provided with the vibrating film and the fixed film with the cavity interposed therebetween.
- Preferably, the third method for fabricating a semiconductor device further includes, after the step (e), the step of removing the protective film with each of the chips held on a chip holder. With this method, the protective film can be removed reliably.
- Preferably, in the third method for fabricating a semiconductor device, in the step (e), the blade dicing is performed in the state in which a dicing tape is stuck onto the surface of the semiconductor wafer opposite to the surface formed with the fixed film, and the method further comprises, after the step (e), the step of removing the surface protective film from each of the chips which are held stuck onto the dicing tape.
- With this method, the protective film can be removed reliably, and concurrently moving the chip to the chip holder is eliminated.
- A fourth method for fabricating a semiconductor device according to the present invention includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; the step (c) of forming a fixed film on the intermediate film; the step (d) of forming, from the fixed film side, a groove in portions of the fixed film, the intermediate film, and the semiconductor wafer, the groove surrounding each of the chips; the step (e) of removing, by etching the semiconductor wafer formed with the groove, the sacrifice layer to provide a cavity between the vibrating film and the fixed film; and the step (f) of grinding, after the step (e), the surface of the semiconductor wafer opposite to the surface formed with the groove until the ground surface reaches the groove, thereby separating the chips.
- With the fourth method for fabricating a semiconductor device, first, in the state in which the fixed film is stacked onto the sacrifice layer, the groove surrounding each of the chips is formed from the surface side of the semiconductor wafer formed with the fixed film. In this formation, the groove is formed not to reach the other surface of the semiconductor wafer (formed to reach the halfway depth of the wafer), whereby the resulting semiconductor wafer is in the state in which the chips each containing the vibrating film and the like are connected to each other only at around the other surface of the wafer. Since dicing is performed with the sacrifice layer remaining, breakage of the fixed film during this step is prevented.
- Next, the semiconductor wafer in the state described above is etched to remove the sacrifice layer, and then the other surface of the semiconductor wafer is ground (back grinding). This grinding is performed to reach the groove which extends from the surface thereof formed with the fixed film, thereby removing the portions of the semiconductor wafer which connect the chips. As a result, the wafer is cut into the separate chips. In the manner described above, the semiconductor device can be fabricated with breakage of the fixed film or the like avoided.
- Preferably, in the step (d), the groove is formed a predetermined distance away from the vibrating film of each of the chips.
- During etching for removing the sacrifice layer, it is conceivable that the semiconductor wafer is also etched from the side surface of the groove and thus the function of the semiconductor device to be fabricated is affected. To avoid this trouble, the groove is arranged so that it is spaced away from the vibrating film by a predetermined distance containing a margin in consideration of such etching of the side surface of the groove. Thus, the semiconductor device can be reliably fabricated while the influence of the etching of the side surface of the groove is avoided.
- As described above, with the method for fabricating a semiconductor device according to the present invention, by removing the sacrifice layer after formation of the fixed film on the sacrifice layer, the semiconductor device can be fabricated in which the fixed film is formed above the cavity. In this method, removal of the sacrifice layer after dicing, dicing by a laser, provision of the protective film on the fixed film, or back grinding after formation of the groove with the halfway depth can prevent the fixed film from being broken by a pressure from cleaning liquid applied during dicing, and thereby the semiconductor device can be fabricated reliably. Thus, the semiconductor wafer can be formed into chips while both of breakage of the portion having a poor-strength structure during dicing and the occurrence of contaminants are prevented. Accordingly, the method is useful particularly in fabrication of a MEMS microphone chip or the like.
-
FIG. 1 is a view illustrating the structure of a semiconductor device (a MEMS microphone chip 100) fabricated in each embodiment of the present invention. -
FIGS. 2A to 2E are views illustrating a method for fabricating a semiconductor device according to a first embodiment of the present invention. -
FIGS. 3A and 3B are views illustrating a method for fabricating a semiconductor device according to a modification of the first embodiment of the present invention. -
FIGS. 4A to 4C are views illustrating a method for fabricating a semiconductor device according to a second embodiment of the present invention. -
FIGS. 5A and 5B are views followingFIGS. 4A to 4C , which illustrate the method for fabricating a semiconductor device according to the second embodiment of the present invention. -
FIGS. 6A to 6C are views illustrating a method for fabricating a semiconductor device according to a modification of the second embodiment of the present invention. -
FIGS. 7A to 7C are views illustrating a method for fabricating a semiconductor device according to a third embodiment of the present invention. -
FIGS. 8A and 8B are views followingFIGS. 7A to 7C , which illustrate the method for fabricating a semiconductor device according to the third embodiment of the present invention. -
FIGS. 9A to 9C are views illustrating other process steps of the method for fabricating a semiconductor device according to the third embodiment of the present invention. -
FIGS. 10A and 10B are views illustrating a method for fabricating a semiconductor device according to a fourth embodiment of the present invention. -
FIGS. 11A to 11C are views followingFIGS. 10A and 10B , which illustrate the method for fabricating a semiconductor device according to the fourth embodiment of the present invention. -
FIG. 12 is a view illustrating the distance M between a cutting line L and asacrifice layer 113 in the method for fabricating a semiconductor device according to the fourth embodiment of the present invention. -
FIGS. 13A and 13B are views illustrating a conventional technique of dicing. -
FIG. 14 is aview illustrating contaminants 201 which may occur within acavity 102 a of theMEMS microphone chip 100 and which can be reduced in the present invention. - Hereinafter, embodiments of the present invention will be described by using fabrication of a MEMS microphone chip as an example. First, the MEMS microphone chip refers to a semiconductor device having a structure shown in
FIG. 1 . - Referring to
FIG. 1 , theMEMS microphone chip 100 is fabricated using asemiconductor substrate 101. Thesemiconductor substrate 101 has a throughhole 101 a, and on thesemiconductor substrate 101, anintermediate film 102 is provided which has acavity 102 a located above the throughhole 101 a. Also, above the throughhole 101 a, a vibratingfilm 103 is provided to stop up the throughhole 101 a. Furthermore, a fixedfilm 104 is provided to cover theintermediate film 102 and thecavity 102 a. - As shown above, the
cavity 102 a is interposed between the vibratingfilm 103 and the fixedfilm 104. A portion of the fixedfilm 104 located over thecavity 102 a is provided with asound hole 104 a, and also the vibratingfilm 103 is provided with ahole 103 b. As can be seen from this structure, thesound hole 104 a through the fixedfilm 104 has the function of taking in sound from the outside of theMEMS microphone chip 100 to the inside of theMEMS microphone chip 100. Thehole 103 b of the vibratingfilm 103 has the function of matching atmospheric pressure of the inside to that of the through hole area. - In the
MEMS microphone chip 100 with this structure, sound wave introduced through thesound hole 104 a vibrates the vibratingfilm 103. This vibration changes the distance between the fixedfilm 104 and the vibratingfilm 103, which in turn changes the capacitance between the fixedfilm 104 as an upper electrode and the vibratingfilm 103 as a lower electrode. This change in capacitance can be taken out as an electrical signal. In the manner described above, sound wave can be converted into an electrical signal. - In the respective embodiments that will be described below, description is made of a fabrication method of the MEMS microphone chip 100 (which, however, does not mean that the present invention is limited only to MEMS microphone chip fabrication). In particular, detailed description will be made of a method for forming the vibrating
film 103 and the fixedfilm 104 which have poor strengths because of their extremely thin, independent portions (which do not have a structure reinforced by stacking another film thereon). - In the fabricated
MEMS microphone chip 100, contaminants may occur within thecavity 102 a. - Herein, the contaminants refer to, for example, fragments of the
semiconductor wafer 101, fragments of a dicing tape, broken pieces of a blade used for dicing, or the like, which are caused in fabrication processes of theMEMS microphone chip 100. Ifsuch contaminants 201 are smaller than thehole 103 b or thesound hole 104 a, they may go, as shown inFIG. 14 , from thehole 103 b or thesound hole 104 a into thecavity 102 a during fabrication processes of theMEMS microphone chip 100, and remain in thecavity 102 a even after completion of the fabrication processes. AlthoughFIG. 14 shows thecontaminants 201 adhering onto the vibratingfilm 103, it is also conceivable that they adhere to the side surfaces of the fixedfilm 104 and theintermediate film 102, and the side surface of thesemiconductor wafer 101. - If
such contaminants 201 occur, the performance of theMEMS microphone chip 100 is degraded. In particular, the frequency response thereof as a microphone is degraded, and thereby it becomes difficult for the chip to ensure a necessary quality. This causes degradation of the fabrication yield of theMEMS microphone chip 100. - Because of poor strengths of the vibrating
film 103 and the fixedfilm 104 or other reasons, removal of thecontaminants 201 having occurred once is not easy. Therefore, it is desirable to prevent the occurrence thereof. - A method for fabricating a semiconductor device according to a first embodiment of the present invention will be described below with reference to the accompanying drawings.
-
FIGS. 2A to 2E show a fabrication method of theMEMS microphone chip 100 according to the first embodiment. - Referring to
FIG. 2A , first, astack material film 103 a to be formed into the vibratingfilm 103 is formed on one side of the semiconductor wafer 101 (referred hereinafter to as a front surface). Thestack material film 103 a may have a structure made by stacking, for example, a SiN film, a PS (Poly Silicon) film, a TEOS (Tetraetylorthosilicate) film, and a SiN film in this order from bottom to top. - Next, an
etching stopper film 111 of, for example, a SiO2 film is formed to cover thestack material film 103 a. Theetching stopper film 111 has a pattern corresponding to the etching shape of the vibratingfilm 103. - Note that in some cases, in forming the
stack material film 103 a, for example, anoxide film 112 is formed on the surface of thesemiconductor wafer 101 opposite to the surface formed with thestack material film 103 a (referred hereinafter to as a back surface). -
FIG. 2A also shows a cutting line L along which the dicing is to be performed in a later process. By the dicing along the cutting line L, an area containing one stack-material film 103 a is formed into one chip. Although only one structure is shown inFIG. 2A , a plurality of such structures to be formed into chips, respectively, are simultaneously formed on thesemiconductor wafer 101. - Thereafter, etching is performed using the
etching stopper film 111 as a mask to form thestack material film 103 a into the vibratingfilm 103 with the shape shown inFIG. 2B . It is sufficient that, during this step, for example, dry etching with a fluorine-based gas is performed on the SiN film and wet etching with a hydrofluoric acid-based solvent is performed on the PS film. - Subsequently, as shown in
FIG. 2B , theintermediate film 102 having asacrifice layer 113 on the vibratingfilm 103 is formed on thesemiconductor wafer 101. Further, the fixedfilm 104 is formed to cover thesacrifice layer 113 and theintermediate film 102. - In this structure, the
sacrifice layer 113 and theintermediate film 102 are formed of, for example, BPSG (Boron Phosphorous Silicate Glass), and the fixedfilm 104 is formed of a stacked film having the same composition as the vibratingfilm 103. That is to say, the fixedfilm 104 of the first embodiment has a structure made by stacking a SiN film, a PS film, a TEOS film, and a SiN film in this order from bottom to top. - In the
MEMS microphone chip 100 of the first embodiment, theintermediate film 102 and thesacrifice layer 113 are simultaneously formed as one layer, and thereafter only a portion of the layer located on the vibratingfilm 103 is removed as thesacrifice layer 113. However, their formation procedure is not limited to this, and it is conceivable that theintermediate film 102 and thesacrifice layer 113 are formed separately. In this case, different materials may be used for them. - As shown in
FIG. 2C , thesemiconductor wafer 101 is subjected to back grinding. To be more specific, the back surface of the semiconductor wafer 101 (the surface thereof opposite to the surface formed with the vibrating film 103) is ground to thin thesemiconductor wafer 101. This process is performed with a BG (back grinding)tape 114 stuck onto the fixedfilm 104. As theBG tape 114, use may be made of, for example, a polyethylene tape with acrylic adhesive applied thereto. - Next, as shown in
FIG. 2D , amask 115 of a silicon oxide film or the like is formed on the back surface of thesemiconductor wafer 101, and thesemiconductor wafer 101 is etched using this mask. Thereby, thesemiconductor wafer 101 is formed with the throughhole 101 a extending from the back surface, so that the vibratingfilm 103 is exposed with the surface facing the throughhole 101 a. - Subsequently, the
semiconductor wafer 101 is subjected to dicing along the cutting line L to separate chips from each other, thereby formingchips 100 a. For this dicing, a dicingtape 116 is stuck onto the back surface of thesemiconductor wafer 101, and in this state, the dicing is performed with a blade.FIG. 2E shows the state of the area after dicing which contains about twochips 100 a. Note that as the dicingtape 116, use may be made of, for example, a polyolefin tape with acrylic adhesive applied thereto. - Such dicing is performed while, for example, water for cleaning is being supplied in order to remove cutting fragments. The fixed
film 104 is thin, but it is stuck onto thesacrifice layer 113. Thus, even though the fixedfilm 104 receives a pressure from supplied water, it is never broken easily. - Thereafter, the dicing
tape 116 is peeled off, and etching is performed in the state of thechip 100 a to remove thesacrifice layer 113. Thus, the remaining space serves as thecavity 102 a. In the manner described above, the structure of theMEMS microphone chip 100 shown inFIG. 1 can be provided. Note that in this etching, HF can be used as an etching solution. - As described above, dicing for forming the wafer into chips can be performed before removal of the
sacrifice layer 113 to prevent breakage of the fixedfilm 104. Then, thesacrifice layer 113 is removed after this dicing, and eventually the semiconductor device (the MEMS microphone chip 100) having the structure in which the vibratingfilm 103 and the fixedfilm 104 interpose thecavity 102 a can be fabricated with good yield. - Moreover, the cutting fragments occurring in the dicing process are prevented from remaining, as the
contaminants 201 as shown inFIG. 14 , within thecavity 102 a. - Specifically, in dicing, fragments appear from the
semiconductor wafer 101, theintermediate film 102, the dicingtape 116, and the like, and in some cases, broken pieces of a dicing blade appear as the fragments. Such fragments may be smaller than thehole 103 b or thesound hole 104 a. If thesacrifice layer 113 is not provided in the device, it is conceivable that the fragments will enter thecavity 102 a. Thus, thecontaminants 201 occurring in the finishedMEMS microphone chip 100 as shown inFIG. 14 degrade the quality of the device. - However, with the method of the first embodiment, the
sacrifice layer 113 still remains in dicing. Therefore, the occurrence of thecontaminants 201 shown inFIG. 14 is prevented. This results in improvement of quality and fabrication yield of theMEMS microphone chip 100. - Note that in the processes described above, the back grinding of the
semiconductor wafer 101 is performed after formation of the fixedfilm 104 and before formation of the throughhole 101 a. However, the back grinding can also be performed before formation of the vibratingfilm 103 shown inFIG. 2A . In this case, using thesemiconductor wafer 101 having been already thinned, formation of the vibratingfilm 103 is made as in the case ofFIG. 2A . - Furthermore, the back grinding may be performed after formation of the fixed
film 104 and subsequent formation of the throughhole 101 a. - As can be seen from the above, the
MEMS microphone chip 100 can also be fabricated in the order of process steps differing from that shown inFIGS. 2A to 2E . - Next description will be made of a method for fabricating a semiconductor device according to a modification of the first embodiment. When compared with the method for fabricating a semiconductor device according to the first embodiment, this modification is characterized in that a protective film is provided on the fixed
film 104. This will now be described with reference to the accompanying drawings.FIGS. 3A and 3B are views showing characteristic processes in this modification. - First, as in the case of the first embodiment, the steps illustrated in
FIGS. 2A to 2D are carried out. Then, as shown inFIG. 3A , aprotective film 117 is formed on the fixedfilm 104, and the dicingtape 116 is stuck onto the back surface of thesemiconductor wafer 101. Thereafter, thesemiconductor wafer 101 as well as theprotective film 117 is subjected to blade dicing along the cutting line L to provide thechips 100 a as shown inFIG. 3B . With this method, theprotective film 117 further reliably prevents breakage of the fixedfilm 104, so that the fabrication yield of theMEMS microphone chip 100 can be improved. Note that theprotective film 117 can be formed by using acrylic or the like as the material. - Thereafter, the
protective film 117 is removed. This removal can also be made after dicing and as an independent step for the removal of theprotective film 117. In this case, after removal of theprotective film 117, etching is performed to remove thesacrifice layer 113, and then the semiconductor device shown inFIG. 1 can be provided. - Instead of removing the
protective film 117 in an independent step, theprotective film 117 can also be removed simultaneously with an etching for removing thesacrifice layer 113. With this, the semiconductor device shown inFIG. 1 can be provided with an increase in the number of process steps suppressed. - A method for fabricating a semiconductor device according to a second embodiment of the present invention will be described below with reference to the accompanying drawings. Also in the second embodiment, description will be made by using as an example the
MEMS microphone chip 100 shown inFIG. 1 . Since process steps except removal of thesacrifice layer 113 and chip formation are the same as those of the first embodiment, the chip formation process will be described mainly in the second embodiment. Note thatFIGS. 4A to 4C , 5A, and 5B are views illustrating fabrication steps of the semiconductor device of the second embodiment. - To be more specific, first, process steps shown in
FIGS. 2A to 2D are carried out in the same manner as those in the first embodiment. Thereby, thesemiconductor wafer 101 as shown inFIG. 2D can be provided which has a plurality of structures serving as chips, respectively. - Next, as shown in
FIG. 4A , thesemiconductor wafer 101 is subjected to an etching process to remove the respective sacrifice layers 113 from the structures still in the wafer state. Thus, the remaining spaces serve as thecavities 102 a. Also inFIG. 4A , the cutting line L along which dicing is to be performed later is shown, and by the later dicing, the region surrounded with the cutting line L is formed into one chip. Thus, a region in thesemiconductor wafer 101 containing about two chips is shown inFIG. 4A . - Subsequently, as shown in
FIG. 4B , alaser 118 for dicing is radiated onto the cutting line L of thesemiconductor wafer 101 from the back-surface side. This alters the portions of thesemiconductor wafer 101, theintermediate film 102, and the fixedfilm 104 which are radiated with the laser 118 (in the vicinity of the cutting line L), thereby producingaltered layers 202 which have degraded physical strengths. - With such construction, when, as shown in
FIG. 4C , a dicing tape is then stuck onto the back surface of thesemiconductor wafer 101 and expanding is conducted, thesemiconductor wafer 101 and the like are cut at the position radiated with thelaser 118 to separate the chips. In this description, “expanding” means that the dicingtape 116 is outwardly pulled to be expanded in order to apply, to thesemiconductor wafer 101 after radiation of the laser 118 a, a force in the direction along the wafer surface.FIG. 4C shows the expanding in which thedicing tape 116 is pulled in the direction indicated by the arrow F. - In the manner described above, the
MEMS microphone chip 100 as shown inFIG. 1 can be fabricated. - Note that each of the chips separated has the altered
layer 202 remaining around itself. If the output of the radiated laser is 1 to 10 W, the width K of the remaining alteredlayer 202 is about 1 to 5 μm. -
FIGS. 4B and 4C show the state of the wafer in which the entire portions of thesemiconductor wafer 101, theintermediate film 102, and the fixedfilm 104 contained in the laser-radiated cutting line L have been changed into the altered layers 202. However, an alternative state may be formed in which only a limited area is changed into the alteredlayer 202 and a portion left without being altered is also present. It is sufficient that the alteredlayer 202 is formed by such an amount that thechips 100 are separated from each other by the expanding shown inFIG. 4C . - The altered
layer 202 is typically made of a polycrystalline layer. To be more specific, a wafer of single-crystal silicon can be used as thesemiconductor wafer 101 in the second embodiment, and in this case, the crystal structure of the laser-radiated portion is altered to produce the alteredlayer 202 made of a polycrystalline layer. - Single-crystal silicon ideally has a diamond lattice structure in which all atoms are regularly arranged. On the other hand, in the case of a polycrystalline layer, a crystal structure in which atoms are regularly arranged is only locally observed, and a great number of such local crystal structures gather to produce the polycrystalline layer. Therefore, the polycrystalline layer does not have a regular arrangement ranging widely. Accordingly, laser radiation reduces the region having a regular atom arrangement.
- Such a difference between single crystal and polycrystal can be identified by, for example, Raman spectroscopy.
- The laser radiation and the laser dicing by the expanding as described above are performed without supplying any cleaning water. Therefore, the fixed
film 104 above thecavity 102 a is never broken by a pressure from the cleaning water or the like. - As described above, even in the case where before dicing, the
sacrifice layer 113 is removed in the wafer state, the dicing conducted by laser dicing can successfully avoid breaking the fixedfilm 104 by a pressure from the cleaning water. Thus, the yield obtained in fabricating theMEMS microphone chip 100 can be improved. - Before the laser radiation, a surface
protective tape 119 may be stuck onto the fixedfilm 104 as shown in FIG. SA. Thereafter, thelaser 118 is radiated from the back-surface side of thesemiconductor wafer 101. Moreover, when the dicingtape 116 is stuck onto the back surface of thesemiconductor wafer 101 and the surfaceprotective tape 119 is peeled off, expanding can be conducted in the same manner as shown inFIG. 4C . Such use of the surfaceprotective tape 119 can prevent the fixedfilm 104 and the like from being damaged in dicing, and thereby theMEMS microphone chip 100 can be fabricated more reliably. Furthermore, the surfaceprotective tape 119 can prevent thecontaminants 201 from entering thecavity 102 a (seeFIG. 14 ). - After removal of the
sacrifice layer 113 by subjecting thesemiconductor wafer 101 to etching, the dicingtape 116 may be stuck onto the back surface of thesemiconductor wafer 101 as shown inFIG. 5B . In this case, thelaser 118 is radiated from the front-surface side of thesemiconductor wafer 101. After this radiation, expanding as shown inFIG. 4C is also conducted to cut thesemiconductor wafer 101 along the portion altered by the laser radiation. Thereby, the wafer can be formed into chips. - As is apparent from the above, the laser radiation can be conducted from either the front- or back-surface side of the
semiconductor wafer 101. Also in the case shown inFIGS. 5A and 5B , laser radiation produces an altered layer, but its illustration is omitted. - In the cutting line L to be radiated with the
laser 118, if an oxide film, a metal film, or the like is present on the surface thereof the laser enters, thelaser 118 may then be reflected. In the case where the laser is thus reflected, the laser dicing is difficult to perform. However, as described above, the laser radiation can be made from either side of thesemiconductor wafer 101. Therefore, if either one of the front and back surfaces of the wafer does not have an oxide film, a metal film, or the like, chip formation by laser dicing can be made. - Note that the respective components in the second embodiment can be made of the same materials as those used in the first embodiment. A chemical solution used for etching is also the same as that used in the first embodiment.
- A modification of the second embodiment will be described below.
FIGS. 6A to 6C are views illustrating semiconductor device fabrication steps according to this modification. In this modification, like the first embodiment, the procedure up to formation of the fixedfilm 104 is first carried out to provide the structure shown inFIG. 2B . - Next, a
mask 115 is formed on the back surface of thesemiconductor wafer 101, and thesemiconductor wafer 101 is etched from the back-surface side. Thereby, a throughhole 101 b is formed, so that the vibratingfilm 103 is exposed with the back surface facing the throughhole 101 b. This state is shown inFIG. 6A . - Subsequently, as shown in
FIG. 6B , thesacrifice layer 113 is removed by etching. Thus, the remaining space serves as thecavity 102 a. Thereafter, as shown inFIG. 6C , the surfaceprotective tape 119 is stuck onto the fixedfilm 104, and then the back surface of thesemiconductor wafer 101 is ground (back grinding is performed). This thins thesemiconductor wafer 101. That is to say, when this modification is compared with the second embodiment, the step of removing thesacrifice layer 113 and the step of performing a back grinding are carried out in the reverse order. - Then, the same laser radiation as that shown in
FIG. 5A is conducted. Thereby, the portion radiated with thelaser 118 is altered to have a physically poor strength. Further, likeFIG. 4C , after the dicingtape 116 is stuck and the surfaceprotective tape 119 is peeled off, expanding is conducted. Thereby, thesemiconductor wafer 101, theintermediate film 102, and the fixedfilm 104 are cut at the portion radiated with thelaser 118. As a result of this, individual chips can be fabricated which each contain the structure having the fixedfilm 104 over the vibratingfilm 103 with thecavity 102 a interposed therebetween. - With this modification, the surface
protective tape 119 can be used to carry out the two processes, that is, the back grinding and the laser radiation. To be more specific, as compared with the case like the second embodiment where after peeling off of theBG tape 114 used in back grinding, laser radiation is made using the surfaceprotective tape 119, the number of tapes used can be decreased. Moreover, the numbers of tape-sticking and -peeling steps can also be decreased. As a result of this, simplification of the fabrication processes and cost reduction can be made. - A method for fabricating a semiconductor device according to a third embodiment of the present invention will be described below with reference to the accompanying drawings. Also in the third embodiment, description will be made by using as an example the
MEMS microphone chip 100 shown inFIG. 1 . Since process steps except removal of thesacrifice layer 113 and chip formation are the same as those of the first embodiment, the chip formation process will be described mainly in the third embodiment. Note thatFIGS. 7A to 7C , 8A, and 8B are views illustrating a method for fabricating a semiconductor device according to the third embodiment. - To be more specific, first, process steps shown in
FIGS. 2A to 2D are carried out in the same manner as the first embodiment. Thereby, thesemiconductor wafer 101 as shown inFIG. 2D can be provided which has a plurality of structures having the fixedfilm 104 formed over the vibratingfilm 103 with thesacrifice layer 113 interposed therebetween. - Next, as shown in
FIG. 7A , thesemiconductor wafer 101 is subjected to an etching process to remove the respective sacrifice layers 113 from the structures still in the wafer state. Thus, the remaining spaces serve as thecavities 102 a. InFIG. 7A , the cutting line L along which dicing is to be performed later is also shown, and about two regions in thewafer 101 to be formed into chips, respectively, by dicing are also shown. - Subsequently, as shown in
FIG. 7B , aprotective film 117 is formed on the fixedfilm 104. It is sufficient that this film is made of, for example, acrylic. Then, the dicingtape 116 is stuck onto the back surface of thesemiconductor wafer 101. - As shown in
FIG. 7C , blade dicing is performed on thesemiconductor wafer 101 as well as theprotective film 117. During this dicing, theprotective film 117 is formed on the fixedfilm 104 to prevent the fixedfilm 104 from being broken by a pressure from cleaning water that accompanies the dicing. - With this procedure, even though blade dicing accompanying supply of cleaning water is employed, the dicing can be performed while the
protective film 117 prevents breakage of the fixedfilm 104, thereby providing chips. - During such dicing, the
protective film 117 having been formed avoids the occurrence ofcontaminants 201 within thecavity 102 a as shown inFIG. 14 . - Thereafter, the
protective film 117 is removed, and then theMEMS microphone chip 100 identical to the structure inFIG. 1 can be provided. It is sufficient that for removal of theprotective film 117, for example, the chip provided by the dicing is taken off from the dicingtape 116 and moved to achip holder 120 as shown inFIG. 8A , and then cleaning or the like with IPA (isopropyl alcohol) or the like is performed on the chip. This enables more reliable cleaning. - As an alternative method for removing the
protective film 117, as shown inFIG. 8B , the chips held stuck onto the dicingtape 116 can also be subjected to IPA cleaning. This case has an advantage that a more simple process can be provided since moving the chip to the chip holder is eliminated. - In the manner described above, the semiconductor device having the structure in which the fixed
film 104 is formed over the vibratingfilm 103 with thecavity 102 a interposed therebetween, specifically, theMEMS microphone chip 100 can be fabricated with good yield. Moreover, prevention of the occurrence of contaminants can attain improvement of the quality and yield of the device. - Note that the process steps described above are carried out in the order of: formation of the fixed
film 104; back grinding; and formation of the throughhole 101 a. However, as in the case of the first embodiment, back grinding may be performed before formation of the vibratingfilm 103. - Furthermore, back grinding can also be performed after formation of the
protective film 117 and before dicing.FIGS. 9A to 9C are views illustrating process steps carried out in this case. - To be more specific, after formation of the structure shown in
FIG. 2B , as shown inFIG. 9A , themask 115 is provided on the back surface of thesemiconductor wafer 101. Then, etching using this mask is performed to form the throughhole 101 b. - Next, as shown in
FIG. 9B , theprotective film 117 is formed on the fixedfilm 104. Then, theBG tape 114 is stuck onto theprotective film 117, and the resultingsemiconductor wafer 101 is subjected to back grinding. Thereby, as shown inFIG. 9C , thesemiconductor wafer 101 is thinned from the back-surface side. After theBG tape 114 is peeled off, the dicingtape 116 is stuck and blade dicing is performed in the same manner as shown inFIGS. 7B and 7C . Removal of theprotective film 117 is also made as described above. - A method for fabricating a semiconductor device according to a fourth embodiment of the present invention will be described below with reference to the accompanying drawings.
FIGS. 10A , 10B, and 11A to 11C are views illustrating the method for fabricating a semiconductor device according to the fourth embodiment. - Also in the fourth embodiment, description will be made by using as an example the
MEMS microphone chip 100 shown inFIG. 1 . Since process steps except removal of thesacrifice layer 113 and chip formation are the same as those of the first embodiment, the chip formation process will be described mainly in the fourth embodiment. - First, process steps up to formation of the fixed
film 104 are carried out in the same manner as those in the first embodiment, and thereby the structure shown inFIG. 2B is provided. That is to say, the structure is provided in which the vibratingfilm 103 is formed on thesemiconductor wafer 101 and the fixedfilm 104 is formed over the vibratingfilm 103 with thesacrifice layer 113 interposed therebetween. At this point in time, back grinding has not been conducted yet. - Next, as shown in
FIG. 10A , themask 115 is formed on the back surface of the semiconductor wafer 101 (the surface of the wafer opposite to the surface formed with the vibrating film 103), and thesemiconductor wafer 101 is etched from the back-surface side. Thereby, the throughhole 101 b is formed, so that the vibratingfilm 103 is exposed with the back surface facing the throughhole 101 b. - Subsequently, blade dicing is performed from the front-surface side of the
semiconductor wafer 101. Note that as shown inFIG. 10B , this blade dicing is performed from the front-surface side to provide agroove 122 and concurrently to leave, around the back surface of thesemiconductor wafer 101, a portion of thesemiconductor wafer 101 serving as athin connection portion 121. As a result of this, regions of thesemiconductor wafer 101 to be formed into chips are in the state in which they are connected to each other by theconnection portions 121 made by leaving thin portions of thesemiconductor wafer 101. - In such blade dicing, since the fixed
film 104 is stacked on thesacrifice layer 113, breakage of the film by a pressure from cleaning water is avoided. Moreover, since thesacrifice layer 113 is present,contaminants 201 as shown inFIG. 14 are prevented from remaining due to unwanted fragments occurring in dicing. - Subsequently to the dicing, as shown in
FIG. 11A , thesemiconductor wafer 101 formed with thegroove 122 is subjected to an etching process to remove thesacrifice layer 113. Thus, the remaining space serves as thecavity 102 a. - As shown in
FIG. 11B , theBG tape 114 is stuck onto the fixedfilm 104, and then the back surface of thesemiconductor wafer 101 is ground. Such back grinding is performed at least until theconnection portion 121 is ground away and the grinding reaches thegroove 122. Thereby, the regions to serve as the individual chips, which are connected by theconnection portion 121, are separated from each other, and thus theMEMS microphone chip 100 identical to that shown inFIG. 1 can be fabricated. - Thereafter, as shown in
FIG. 11C , the dicingtape 116 is stuck to come into contact with the back surfaces of the individual chips. Then, by peeling off theBG tape 114, transfer to the dicingtape 116 can be made. - As described above, by dicing, the
groove 122 is formed from the front-surface side of thesemiconductor wafer 101 to surround the region which contains the vibratingfilm 103 and the fixedfilm 104 and which is to serve as a chip. Then, thesacrifice layer 113 is removed, and thereafter back grinding is performed from the back-surface side of thesemiconductor wafer 101. With this method, a semiconductor device like theMEMS microphone chip 100 can be fabricated while breakage of the fixedfilm 104 is prevented. Moreover, the occurrence of contaminants in the dicing process is prevented to attain improvement of the quality and fabrication yield of the device. - In the etching for removing the
sacrifice layer 113, the side surface of thegroove 122 can also be etched to increase the width of thegroove 122. For example, as shown inFIG. 12 , the etching can proceed from the cutting line L up to the side-surface etching position E. If such trouble arises, there is a possibility that the trouble affects the function of the semiconductor device (the MEMS microphone chip 100) to be fabricated. - To avoid this trouble, for example, as shown in
FIG. 12 , the distance M from the cutting line L to thesacrifice layer 113 that will be thecavity 102 a later is set to allow an adequate margin in consideration of the etched amount of the side surface of thegroove 122 by the etching process. With this setting, even though the side surface of thegroove 122 is etched to, for example, the side-surface etching position E, the function of the semiconductor device to be fabricated can avoid being affected by this trouble. - Note that in any of the above embodiments, the described materials of the respective components and the like are only illustrative, and there is no special limitation on them.
Claims (13)
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Also Published As
Publication number | Publication date |
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US20100022046A1 (en) | 2010-01-28 |
US20110039365A1 (en) | 2011-02-17 |
JP4480728B2 (en) | 2010-06-16 |
US7838323B2 (en) | 2010-11-23 |
CN102161471A (en) | 2011-08-24 |
JP2008012654A (en) | 2008-01-24 |
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