US20070098895A1 - Method and Apparatus for Producing Uniform, Isotropic Stresses in a Sputtered Film - Google Patents

Method and Apparatus for Producing Uniform, Isotropic Stresses in a Sputtered Film Download PDF

Info

Publication number
US20070098895A1
US20070098895A1 US11/563,664 US56366406A US2007098895A1 US 20070098895 A1 US20070098895 A1 US 20070098895A1 US 56366406 A US56366406 A US 56366406A US 2007098895 A1 US2007098895 A1 US 2007098895A1
Authority
US
United States
Prior art keywords
substrate
film
depositing material
deposition
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/563,664
Inventor
Donald Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Verigy Singapore Pte Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US11/563,664 priority Critical patent/US20070098895A1/en
Publication of US20070098895A1 publication Critical patent/US20070098895A1/en
Assigned to NANONEXUS, INC. reassignment NANONEXUS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SMITH, DONALD LEONARD
Assigned to Glenn Patent Group reassignment Glenn Patent Group LIEN (SEE DOCUMENT FOR DETAILS). Assignors: NANONEXUS, INC.
Assigned to NANONEXUS, INC. reassignment NANONEXUS, INC. LIEN RELEASE Assignors: Glenn Patent Group
Assigned to NANONEXUS (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC reassignment NANONEXUS (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NANONEXUS, INC.
Assigned to VERIGY (SINGAPORE) PTE. LTD. reassignment VERIGY (SINGAPORE) PTE. LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: NANONEXUS (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC
Abandoned legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5826Treatment with charged particles
    • C23C14/5833Ion beam bombardment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31Surface property or characteristic of web, sheet or block

Definitions

  • the invention relates to the deposition of films on substrates. More particularly, the invention relates to a method and apparatus for producing uniform, isotropic stresses in a sputtered film.
  • Thin films are often deposited on substrates by sputtering in a glow-discharge plasma, where ions accelerated out of the plasma knock atoms off of the target (source) material whence the atoms are transported to the substrate.
  • a magnetically confined plasma generator (magnetron) is typically used to increase sputtering efficiency and to reduce the minimum operating pressure.
  • Sputtering is a preferred deposition technique because it can be used for any material, because the energy of the depositing atoms helps film adherence, and because the substrates do not get very hot.
  • One such approach is to position the substrates at a radius far from the target relative to substrate and target diameters.
  • many substrates are positioned at this radius over most of a hemisphere and are kept in a planetary (two-axis) motion so that they occupy a wide range of positions over the hemisphere during the course of the deposition time. This averages out deposition rate variation over the hemisphere.
  • the second approach uses a rectangular target that is larger than the substrate in the target's long dimension.
  • the substrate is placed close to the target and is passed back and forth across it in linear transport so that the substrate is painted with a uniform swath of film in successive layers much like painting with a roller.
  • 100 nm of film are deposited in each pass.
  • Sputtering is used in the formation of various microelectronic structures.
  • a patterned spring structure that is useful in such applications as device testing.
  • D. Smith and S. Alimonda Photolithographically Patterned Spring Contact , U.S. Pat. No. 5,613,861 (25 Mar. 1997), U.S. Pat. No. 5,848,685 (15 Dec. 1998), and International Patent Application No. PCT/US 96/08018 (Filed 30 May 1996), disclose a photolithography patterned spring contact, which is “formed on a substrate and electrically connects contact pads on two devices. The spring contact also compensates for thermal and mechanical variations and other environmental factors.
  • An inherent stress gradient in the spring contact causes a free portion of the spring to bend up and away from the substrate.
  • An anchor portion remains fixed to the substrate and is electrically connected to a first contact pad on the substrate.
  • the spring contact is made of an elastic material and the free portion compliantly contacts a second contact pad, thereby contacting the two contact pads.”
  • Such patterned spring technology depends on being able to control very high levels of film mechanical stress uniformly across a substrate. Stress is common in thin films and is usually undesirable. Indeed, many techniques of process control are used in planetary and linear-transport sputtering, as well as in other film-deposition processes, to minimize stress. Consequently, while many of the factors influencing stress are recognized, the state of the art is concerned with substantially eliminating such stresses.
  • Ion bombardment is known to increase compressive stress in any vacuum-deposition process.
  • magnetron sputtering low plasma pressure increases compression, higher pressure creates tensile stress, and still higher pressure results in porous films that have no mechanical strength in the film plane.
  • the magnetron sputter-deposition of films imparted with stress gradients by increasing plasma pressure during deposition is a presently preferred technique for implementing patterned spring technology.
  • the invention provides a method and apparatus for producing uniform, isotropic stresses in a sputtered film.
  • a new sputtering geometry and a new domain of transport speed are presented, which together allow the achievement of the maximum stress that the film material can hold while avoiding X-Y stress anisotropy and avoiding stress non-uniformity across the substrate, where the X-Y refers to two orthogonal dimensions in the plane of the substrate,
  • the presently preferred embodiment of the invention comprises a method and apparatus for depositing a film on a substrate that comprises the steps of depositing successive layers of film on said substrate at any of successive different discrete deposition angles of rotation of said substrate and/or of said deposition source about a normal axis of said substrate; providing a substantially identical amount of deposition from each different deposition angle as for each other deposition angle; wherein said overall deposited film behaves substantially isotropically in properties in all directions parallel to said substrate and at different angles of rotation about said normal axis.
  • the herein disclosed method and apparatus further comprise the step of reducing the thickness of successive layers of said film on the order of a property projection distance within a depositing material; wherein said property projection distance comprises a distance at which a fluctuation in a relevant film property from point to point through said film's thickness becomes too small. to affect overall properties of said film when averaged through said film's thickness; and wherein said fluctuation is caused by layering.
  • said property projection distance is within a minimum of one atomic diameter of said depositing material to a maximum of ten atomic diameters for stress and strain, and a maximum of one magnetic domain diameter for magnetic properties.
  • the herein disclosed method and apparatus further comprise moving each substrate past a same one or more sources of depositing material in a planetary manner; wherein each time said substrate passes by one of said sources of depositing material as said substrate executes a planet orbit, said substrate has been rotated about said substrate's normal axis with respect to said depositing material source by which it is passing.
  • said substrate is rotated 360/n degrees each time it passes by one of n said depositing material sources, wherein n is an integer larger than 2, or by 90 degrees if n is 2.
  • the herein disclosed method and apparatus further comprise providing four depositing material sources arranged about a circle; and positioning a relevant anisotropic property of each said depositing material source 90 degrees with respect to that of a previous depositing material source; wherein each substrate maintains a fixed rotational orientation about its normal axis as said substrate orbits, as measured from a stationary point; wherein said film is deposited in layers having an anisotropy rotated 90 degrees for each successive layer.
  • said source of depositing material exhibits two-fold symmetry in a relevant anisotropic property of said depositing material source.
  • a 270 degree rotation of said substrate is equivalent to a 90 degree rotation of said substrate with respect to said anisotropy in said relevant property of said film layer when the said source exhibits two-fold symmetry.
  • the herein disclosed method and apparatus further comprise providing two depositing material sources; wherein each depositing material source has two-fold symmetry; wherein said depositing material sources are disposed relative to one another such that a relevant anisotropic property of said depositing material source is rotated 90 degrees with respect to a previous depositing material source; wherein each substrate maintains a fixed rotational orientation about its normal axis as it orbits, as measured from a stationary point; and wherein said film is deposited in layers having an anisotropy rotated 90 degrees for each successive layer.
  • said sources of depositing material comprise linear magnetron sputtering targets from which said depositing material emanates in a pattern which approximates a rectangle having rounded corners.
  • a distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates is sufficiently smaller than a distance between material as it emanates from an end of said rectangular emanation pattern and a nearest edge of said substrate such that a relevant property of said film is sufficiently uniform along said substrate from a center of said substrate to said substrate's edge.
  • the herein disclosed method and apparatus further comprise making film stress along directions parallel to said substrate sufficiently uniform across said substrate by making a distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates sufficiently small, as compared to a distance between material as it emanates from an end of said rectangular emanation pattern and the nearest edge of the substrate.
  • a ratio of distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates to a distance between material as it emanates from an end of said rectangular emanation pattern and a nearest edge of said substrate is 1 ⁇ 4 or less.
  • a further embodiment of the herein disclosed method and apparatus further comprise symmetrically disposing at least one deposition source at any of successive different deposition angles of rotation of said substrate and of said deposition source about a normal axis of said substrate; and depositing successive layers of film on said substrate to achieve high levels of stress in said films, wherein said stress is both isotropic in a film plane and uniform over large areas of a substrate surface.
  • the herein disclosed method and apparatus further comprise providing a monatomic-layer-scale deposition thickness per pass over a target using close-spaced magnetron sputtering from long, substantially rectangular targets; wherein effects on film stress caused by periodic fluctuations in any of deposition incident angle, ion bombardment flux, and substrate azimuthal orientation are minimized.
  • the herein disclosed method and apparatus further comprise rotating said substrate by substantially 90 degrees relative to the source over which it is passing between successive passes to laminate said film; wherein X-Y anisotropy in a film plane is eliminated.
  • the herein disclosed method and apparatus further comprise using magnetron targets that are longer, when compared to a substrate diameter, than is needed for uniform film thickness; wherein uniform film stress along a long axis of said target is achieved.
  • the herein disclosed method and apparatus further comprise providing a drive mechanism comprising a peripheral chain arranged around a ring of substrates, and a chain extending from one substrate to a fixed central sprocket, to impart high speed, planetary motion to said substrate.
  • FIG. 1 is a schematic diagram that shows a plan view of a planetary system and placement of targets and an ion gun according to the invention
  • FIG. 2 is a schematic diagram that shows a side view of the planetary system shown in FIG. 1 , and which illustrates the proximity and relative size of the substrates to the targets and the ion gun according to the invention;
  • FIG. 3 is a schematic diagram that shows a plan view if a chain coupling arrangement for the planetary system shown in FIG. 1 according to the invention.
  • a new sputtering geometry and a new domain of transport speed are herein presented, which together allow the achievement of the maximum stress that the film material can hold, while avoiding X-Y stress anisotropy and avoiding stress non-uniformity across the substrate and stress oscillations through the thickness of the film.
  • the invention is based in part upon the recognition that the angle of incidence at which atoms are deposited on a substrate is an important determinant of film stress, with more grazing (off-normal) angles resulting in more tension or, if excessive, in porosity.
  • grazing off-normal
  • different points on a substrate in radius from the planet's axis, and different azimuthal angles at a given point necessarily experience different time sequences of deposition angle and therefore different film stresses.
  • the azimuthal angle is that rotating in the film plane XY, from +X to +Y to ⁇ X to ⁇ Y; and film stress is always biaxial, i.e. existing along both X and Y.
  • Film stress may be anisotropic, i.e. different in X vs. Y at a given point, and it may be nonuniform in either X or Y across the substrate, or through the thickness of the film.
  • the azimuthal direction that is parallel to the substrate's transport experiences a different sequence of deposition angles over a pass than the perpendicular direction.
  • a single pass typically deposits 100 nm or about 300 monatomic layers (monolayers) of film.
  • the incident angle varies from that of grazing upon the substrate's approach to the target to substantially perpendicular when the substrate is directly in front of the target to grazing again upon the substrate's exit.
  • a layering of alternating stress levels results that prevents the attainment of maximum stress.
  • substrates 14 that are arrayed in a ring on a rotation plate 13 , rotate about their own axes relative to the plate, while the ring of substrates and the plate simultaneously rotate about the plate's axis at substantially the same angular velocity but with opposite sign relative to a fixed point, such that the substrates do not rotate relative to a fixed point.
  • the substrates pass closely 19 (see FIG. 2 ) over and centered on each of one or more rectangular targets 15 .
  • Each target is oriented with its long axis along a plate radius and with its length being sufficiently longer than the substrate 14 so that the decrease in grazing-incidence deposit due to proximity 10 to the end of the target does not result in a stress nonuniformity along that direction.
  • This length of the target is typically greater than that which is needed to achieve uniformity in film thickness.
  • a particularly efficient embodiment uses two targets oriented at right angles to each other so that the substrate 14 executes two target 15 passes during each plate 13 rotation, with each pass having the substrate's 14 X and Y directions reversed relative to the pass direction. This laminates the film to average out the X-Y anisotropy that is inherent to conventional linear transport. Substrate rotation at substantially the same angular velocity but opposite sign, relative to the plate, as plate rotation about a fixed point also results in film thickness uniformity because the point on the inner edge of the substrate 14 , towards the center of the plate, traverses the target 15 at the same linear velocity as the outer point and thus accumulates deposit for the same length of time per pass.
  • FIG. 1 shows the rotation plate 13 with the ring of substrates 14 simultaneously rotating around their own axes 16 .
  • FIG. 1 also shows the potential placement of two rectangular targets 15 at right angles to each other to double the number of target passes by each wafer 14 per plate 13 rotation.
  • the desired orientation 18 of a wafer 14 as it passes under the rectangular target 15 is also shown in FIG. 1 .
  • the wafer rotates 90 degrees to have the identical orientation 18 under each target, relative to a fixed point.
  • four targets may be provided, oriented at 90 degrees to a next target, in a circle above the plate.
  • An ion source 17 can be situated at a point around the plate 13 to bombard the film once per pass and thereby impart compressive stress where needed.
  • FIGS. 1 and 2 show one location of the ion source 17 .
  • the substrates 14 could be electrically biased with DC power if conductive, or RF power if insulating, to accelerate the bombarding ions out of the plasma generated by the sputter source, without the use of an ion gun.
  • RF bias is difficult to deliver and contain when substrates are in motion.
  • each substrate 14 experiences periodic variation in several process parameters that affect stress, e.g. deposition angle of incidence, azimuthal orientation to the target's long axis, and ion bombardment flux.
  • stress e.g. deposition angle of incidence, azimuthal orientation to the target's long axis, and ion bombardment flux.
  • the period of this variation in terms of equivalent film thickness should be of the order of a few atomic spacings, so that the developing atomic structure does not exhibit a variation.
  • the plate should preferably rotate at 1 to 3 rps or 60-180 rpm. This is about 10 ⁇ faster than is needed or desired in conventional planetary deposition, and about 100 ⁇ faster than the pass time in linear transport.
  • conventional linear transport geometry also could achieve monolayer-scale layering. It also could achieve X-Y lamination with the addition of a substrate rotation linkage at the end of each pass.
  • Various ways of constructing planetary motion linkages have been developed and are in use, typically involving either gears, chains, or friction rollers to couple the substrate (planet) rotation to the plate (orbit) rotation and thence to a rotating feedthrough in the vacuum wall, driven by an external motor.
  • Separate planet and orbit drives may also be incorporated using a coaxial rotating feedthrough.
  • FIG. 3 is a schematic diagram that shows a plan view if a chain coupling arrangement for the planetary system shown in FIG. 1 according to the invention.
  • a single rotating feedthrough drives the plate 13 so that all substrates on their platforms 22 rotate together.
  • one of the substrate axles 23 has a second sprocket 25 linked by a second chain 26 to a stationary sprocket 27 of the same diameter at the center of the plate 13 .
  • the sprocket ratio on the second chain could be changed to provide non-unity ratios of planet and orbit angular velocity.
  • the substrate does not rotate relative to the source of depositing material as it passes by the source, thus avoiding possible radial nonuniformity in deposition conditions on the substrate.
  • An equivalent gear linkage could also be used.
  • Fixturing to practice the invention is installed in a conventional 10 ⁇ 7 Torr stainless-steel or aluminum high-vacuum chamber with elastomer seals and cryopumping, such as manufactured by Leybold and other vendors.
  • the system includes at least two rectangular magnetron sputter sources, such as those manufactured by Leybold, and an ion gun with a 6-inch diameter beam, such as the Kaufman-style guns manufactured by Commonwealth, arranged as described above.
  • the cathodes are oriented 90 degrees to each other.
  • the distance from magnetron target surface to wafer is 1′′.
  • the planetary linkage for wafer motion is connected so that the wafers remain in the same rotational orientation about their own normal axes relative to a fixed point as they orbit about the central axis of the chamber.
  • the plate rotating about the central axis carries 6′′ wafers on a 10-inch orbiting radius from the center of the plate, and the 14-inch long magnetrons and the ion gun are centered on the wafers. Fixturing is arranged so that the wafers see an even angular distribution and flux of depositing material across their surface.
  • Film stress vs. pressure of an Ar sputtering gas is measured by sputter deposition at various fixed pressures onto thin wafers. The stress is then calculated in a conventional manner by means of the change in curvature of the wafer caused by the deposition. Deposition at the lowest pressure of typically 1 mTorr may be performed with varying fluxes of 200 to 1000 eV Ar ions to increase compressive stress.
  • Deposition of a multilayer structure is carried out using a progression from compressive to tensile stress along the positive-slope portion of the stress-pressure curve. Springs are patterned and lifted, and spring curvature radius calculated from lift height.
  • MoCr alloy target typ. 0-20 at. % Cr: power2400 W (500-10,000), gas flow: Ar 80 sccm (50-500), pressure: 0.6 to 15 mT (0.2-50), rotation: 120 rpm (10-300).
  • Ion Gun beam current from 50 to 500 mA, ion energy from 200 to 1000 eV.
  • the ion gun and the magnetrons are operated simultaneously in some embodiments.

Abstract

The invention provides a method and apparatus for producing uniform, isotropic stresses in a sputtered film. In the presently preferred embodiment, a new sputtering geometry and a new domain of transport speed are presented, which together allow the achievement of the maximum stress that the film material can hold while avoiding X-Y stress anisotropy and avoiding stress non-uniformity across the substrate.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is a divisional of U.S. Ser. No. 10/487,652, filed Aug. 23, 2002 (Attorney Docket No. NNEX0009), all of which are incorporated herein in their entirety by this reference thereto.
  • BACKGROUND OF THE INVENTION
  • 1. Technical Field
  • The invention relates to the deposition of films on substrates. More particularly, the invention relates to a method and apparatus for producing uniform, isotropic stresses in a sputtered film.
  • 2. Description of the Prior Art
  • Thin films are often deposited on substrates by sputtering in a glow-discharge plasma, where ions accelerated out of the plasma knock atoms off of the target (source) material whence the atoms are transported to the substrate. A magnetically confined plasma generator (magnetron) is typically used to increase sputtering efficiency and to reduce the minimum operating pressure. Sputtering is a preferred deposition technique because it can be used for any material, because the energy of the depositing atoms helps film adherence, and because the substrates do not get very hot.
  • Uniformity of film thickness across large substrates is usually important, and one of two approaches is conventionally taken to achieve such uniformity.
  • One such approach is to position the substrates at a radius far from the target relative to substrate and target diameters. To increase throughput and use targets efficiently, many substrates are positioned at this radius over most of a hemisphere and are kept in a planetary (two-axis) motion so that they occupy a wide range of positions over the hemisphere during the course of the deposition time. This averages out deposition rate variation over the hemisphere.
  • The second approach uses a rectangular target that is larger than the substrate in the target's long dimension. The substrate is placed close to the target and is passed back and forth across it in linear transport so that the substrate is painted with a uniform swath of film in successive layers much like painting with a roller. Typically 100 nm of film are deposited in each pass.
  • Sputtering is used in the formation of various microelectronic structures. Among these structures is a patterned spring structure that is useful in such applications as device testing. For example, D. Smith and S. Alimonda, Photolithographically Patterned Spring Contact, U.S. Pat. No. 5,613,861 (25 Mar. 1997), U.S. Pat. No. 5,848,685 (15 Dec. 1998), and International Patent Application No. PCT/US 96/08018 (Filed 30 May 1996), disclose a photolithography patterned spring contact, which is “formed on a substrate and electrically connects contact pads on two devices. The spring contact also compensates for thermal and mechanical variations and other environmental factors. An inherent stress gradient in the spring contact causes a free portion of the spring to bend up and away from the substrate. An anchor portion remains fixed to the substrate and is electrically connected to a first contact pad on the substrate. The spring contact is made of an elastic material and the free portion compliantly contacts a second contact pad, thereby contacting the two contact pads.”
  • Such patterned spring technology depends on being able to control very high levels of film mechanical stress uniformly across a substrate. Stress is common in thin films and is usually undesirable. Indeed, many techniques of process control are used in planetary and linear-transport sputtering, as well as in other film-deposition processes, to minimize stress. Consequently, while many of the factors influencing stress are recognized, the state of the art is concerned with substantially eliminating such stresses.
  • Ion bombardment is known to increase compressive stress in any vacuum-deposition process. In magnetron sputtering, low plasma pressure increases compression, higher pressure creates tensile stress, and still higher pressure results in porous films that have no mechanical strength in the film plane. The magnetron sputter-deposition of films imparted with stress gradients by increasing plasma pressure during deposition is a presently preferred technique for implementing patterned spring technology.
  • Although it is known in the art how to minimize stress and how to produce high compressive or tensile stress, techniques for maximizing stress and of controlling uniform high stress across large substrates are not known. Both maximizing the stress level and making it uniform are desirable in connection with the fabrication of patterned spring structures. It would be advantageous to provide a method and apparatus for producing uniform, isotropic stresses in a sputtered film.
  • SUMMARY OF THE INVENTION
  • The invention provides a method and apparatus for producing uniform, isotropic stresses in a sputtered film. In the presently preferred embodiment, a new sputtering geometry and a new domain of transport speed are presented, which together allow the achievement of the maximum stress that the film material can hold while avoiding X-Y stress anisotropy and avoiding stress non-uniformity across the substrate, where the X-Y refers to two orthogonal dimensions in the plane of the substrate,
  • The presently preferred embodiment of the invention comprises a method and apparatus for depositing a film on a substrate that comprises the steps of depositing successive layers of film on said substrate at any of successive different discrete deposition angles of rotation of said substrate and/or of said deposition source about a normal axis of said substrate; providing a substantially identical amount of deposition from each different deposition angle as for each other deposition angle; wherein said overall deposited film behaves substantially isotropically in properties in all directions parallel to said substrate and at different angles of rotation about said normal axis.
  • The herein disclosed method and apparatus further comprise the step of reducing the thickness of successive layers of said film on the order of a property projection distance within a depositing material; wherein said property projection distance comprises a distance at which a fluctuation in a relevant film property from point to point through said film's thickness becomes too small. to affect overall properties of said film when averaged through said film's thickness; and wherein said fluctuation is caused by layering.
  • In a preferred embodiment, said property projection distance is within a minimum of one atomic diameter of said depositing material to a maximum of ten atomic diameters for stress and strain, and a maximum of one magnetic domain diameter for magnetic properties.
  • The herein disclosed method and apparatus further comprise moving each substrate past a same one or more sources of depositing material in a planetary manner; wherein each time said substrate passes by one of said sources of depositing material as said substrate executes a planet orbit, said substrate has been rotated about said substrate's normal axis with respect to said depositing material source by which it is passing.
  • In a preferred embodiment said substrate is rotated 360/n degrees each time it passes by one of n said depositing material sources, wherein n is an integer larger than 2, or by 90 degrees if n is 2.
  • The herein disclosed method and apparatus further comprise providing four depositing material sources arranged about a circle; and positioning a relevant anisotropic property of each said depositing material source 90 degrees with respect to that of a previous depositing material source; wherein each substrate maintains a fixed rotational orientation about its normal axis as said substrate orbits, as measured from a stationary point; wherein said film is deposited in layers having an anisotropy rotated 90 degrees for each successive layer.
  • In a preferred embodiment said source of depositing material exhibits two-fold symmetry in a relevant anisotropic property of said depositing material source.
  • In a preferred embodiment a 270 degree rotation of said substrate is equivalent to a 90 degree rotation of said substrate with respect to said anisotropy in said relevant property of said film layer when the said source exhibits two-fold symmetry.
  • The herein disclosed method and apparatus further comprise providing two depositing material sources; wherein each depositing material source has two-fold symmetry; wherein said depositing material sources are disposed relative to one another such that a relevant anisotropic property of said depositing material source is rotated 90 degrees with respect to a previous depositing material source; wherein each substrate maintains a fixed rotational orientation about its normal axis as it orbits, as measured from a stationary point; and wherein said film is deposited in layers having an anisotropy rotated 90 degrees for each successive layer.
  • In a preferred embodiment said sources of depositing material comprise linear magnetron sputtering targets from which said depositing material emanates in a pattern which approximates a rectangle having rounded corners.
  • In a preferred embodiment a distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates is sufficiently smaller than a distance between material as it emanates from an end of said rectangular emanation pattern and a nearest edge of said substrate such that a relevant property of said film is sufficiently uniform along said substrate from a center of said substrate to said substrate's edge.
  • The herein disclosed method and apparatus further comprise making film stress along directions parallel to said substrate sufficiently uniform across said substrate by making a distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates sufficiently small, as compared to a distance between material as it emanates from an end of said rectangular emanation pattern and the nearest edge of the substrate.
  • In a preferred embodiment a ratio of distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates to a distance between material as it emanates from an end of said rectangular emanation pattern and a nearest edge of said substrate is ¼ or less.
  • A further embodiment of the herein disclosed method and apparatus further comprise symmetrically disposing at least one deposition source at any of successive different deposition angles of rotation of said substrate and of said deposition source about a normal axis of said substrate; and depositing successive layers of film on said substrate to achieve high levels of stress in said films, wherein said stress is both isotropic in a film plane and uniform over large areas of a substrate surface.
  • The herein disclosed method and apparatus further comprise providing a monatomic-layer-scale deposition thickness per pass over a target using close-spaced magnetron sputtering from long, substantially rectangular targets; wherein effects on film stress caused by periodic fluctuations in any of deposition incident angle, ion bombardment flux, and substrate azimuthal orientation are minimized.
  • The herein disclosed method and apparatus further comprise rotating said substrate by substantially 90 degrees relative to the source over which it is passing between successive passes to laminate said film; wherein X-Y anisotropy in a film plane is eliminated.
  • The herein disclosed method and apparatus further comprise using magnetron targets that are longer, when compared to a substrate diameter, than is needed for uniform film thickness; wherein uniform film stress along a long axis of said target is achieved.
  • The herein disclosed method and apparatus further comprise providing a drive mechanism comprising a peripheral chain arranged around a ring of substrates, and a chain extending from one substrate to a fixed central sprocket, to impart high speed, planetary motion to said substrate.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic diagram that shows a plan view of a planetary system and placement of targets and an ion gun according to the invention;
  • FIG. 2 is a schematic diagram that shows a side view of the planetary system shown in FIG. 1, and which illustrates the proximity and relative size of the substrates to the targets and the ion gun according to the invention; and
  • FIG. 3 is a schematic diagram that shows a plan view if a chain coupling arrangement for the planetary system shown in FIG. 1 according to the invention.
  • DETAILED DESCRIPTION OF THE INVENTION
  • A new sputtering geometry and a new domain of transport speed are herein presented, which together allow the achievement of the maximum stress that the film material can hold, while avoiding X-Y stress anisotropy and avoiding stress non-uniformity across the substrate and stress oscillations through the thickness of the film.
  • The invention is based in part upon the recognition that the angle of incidence at which atoms are deposited on a substrate is an important determinant of film stress, with more grazing (off-normal) angles resulting in more tension or, if excessive, in porosity. In planetary substrate motion, different points on a substrate in radius from the planet's axis, and different azimuthal angles at a given point, necessarily experience different time sequences of deposition angle and therefore different film stresses.
  • For purposes of the discussion herein, the azimuthal angle is that rotating in the film plane XY, from +X to +Y to −X to −Y; and film stress is always biaxial, i.e. existing along both X and Y. Film stress may be anisotropic, i.e. different in X vs. Y at a given point, and it may be nonuniform in either X or Y across the substrate, or through the thickness of the film.
  • In linear transport, the azimuthal direction that is parallel to the substrate's transport experiences a different sequence of deposition angles over a pass than the perpendicular direction. Moreover, in linear transport, a single pass typically deposits 100 nm or about 300 monatomic layers (monolayers) of film. During this pass the incident angle varies from that of grazing upon the substrate's approach to the target to substantially perpendicular when the substrate is directly in front of the target to grazing again upon the substrate's exit. Thus, a layering of alternating stress levels results that prevents the attainment of maximum stress.
  • In the herein disclosed geometry (see FIG. 1), substrates 14 that are arrayed in a ring on a rotation plate 13, rotate about their own axes relative to the plate, while the ring of substrates and the plate simultaneously rotate about the plate's axis at substantially the same angular velocity but with opposite sign relative to a fixed point, such that the substrates do not rotate relative to a fixed point. The substrates pass closely 19 (see FIG. 2) over and centered on each of one or more rectangular targets 15. Each target is oriented with its long axis along a plate radius and with its length being sufficiently longer than the substrate 14 so that the decrease in grazing-incidence deposit due to proximity 10 to the end of the target does not result in a stress nonuniformity along that direction. This length of the target is typically greater than that which is needed to achieve uniformity in film thickness.
  • A particularly efficient embodiment uses two targets oriented at right angles to each other so that the substrate 14 executes two target 15 passes during each plate 13 rotation, with each pass having the substrate's 14 X and Y directions reversed relative to the pass direction. This laminates the film to average out the X-Y anisotropy that is inherent to conventional linear transport. Substrate rotation at substantially the same angular velocity but opposite sign, relative to the plate, as plate rotation about a fixed point also results in film thickness uniformity because the point on the inner edge of the substrate 14, towards the center of the plate, traverses the target 15 at the same linear velocity as the outer point and thus accumulates deposit for the same length of time per pass.
  • FIG. 1 shows the rotation plate 13 with the ring of substrates 14 simultaneously rotating around their own axes 16. FIG. 1 also shows the potential placement of two rectangular targets 15 at right angles to each other to double the number of target passes by each wafer 14 per plate 13 rotation. The desired orientation 18 of a wafer 14 as it passes under the rectangular target 15 is also shown in FIG. 1. For this example, the wafer rotates 90 degrees to have the identical orientation 18 under each target, relative to a fixed point. Those skilled in the art will appreciate that other arrangements may be provided in connection with the invention. For example, four targets may be provided, oriented at 90 degrees to a next target, in a circle above the plate.
  • An ion source 17 can be situated at a point around the plate 13 to bombard the film once per pass and thereby impart compressive stress where needed. FIGS. 1 and 2 show one location of the ion source 17. Alternatively, the substrates 14 could be electrically biased with DC power if conductive, or RF power if insulating, to accelerate the bombarding ions out of the plasma generated by the sputter source, without the use of an ion gun. However, RF bias is difficult to deliver and contain when substrates are in motion.
  • Over the course of a single rotation of the plate 13, each substrate 14 experiences periodic variation in several process parameters that affect stress, e.g. deposition angle of incidence, azimuthal orientation to the target's long axis, and ion bombardment flux. Because an objective of the invention is to have these variations not result in a periodic layering of film stress, the period of this variation in terms of equivalent film thickness should be of the order of a few atomic spacings, so that the developing atomic structure does not exhibit a variation. At the same time, as a practical matter, it is desired to deposit film at as high a rate as possible, both to increase production throughput and to minimize the deleterious effect of co-depositing impurities from the background gasses in the vacuum chamber. Consequently, it is desired to rotate the plate at a much higher speed than would otherwise be necessary. For example, at a typically desired time-averaged deposition rate of 1 nm/sec (3.6 um/hr or about 3 monolayers/sec), the plate should preferably rotate at 1 to 3 rps or 60-180 rpm. This is about 10× faster than is needed or desired in conventional planetary deposition, and about 100× faster than the pass time in linear transport.
  • In alternative embodiments, conventional linear transport geometry also could achieve monolayer-scale layering. It also could achieve X-Y lamination with the addition of a substrate rotation linkage at the end of each pass. Various ways of constructing planetary motion linkages have been developed and are in use, typically involving either gears, chains, or friction rollers to couple the substrate (planet) rotation to the plate (orbit) rotation and thence to a rotating feedthrough in the vacuum wall, driven by an external motor. Separate planet and orbit drives may also be incorporated using a coaxial rotating feedthrough.
  • A new and simpler method of chain-coupling the orbit and planet drives is disclosed herein for use in connection with the invention. FIG. 3 is a schematic diagram that shows a plan view if a chain coupling arrangement for the planetary system shown in FIG. 1 according to the invention. In this approach, first a single rotating feedthrough drives the plate 13 so that all substrates on their platforms 22 rotate together. Finally, one of the substrate axles 23 has a second sprocket 25 linked by a second chain 26 to a stationary sprocket 27 of the same diameter at the center of the plate 13. This results in substrate rotation relative to the plate 13 at the same angular velocity but with opposite sign as ring rotation, with a minimum of moving parts and hardware and thus with maximum robustness at high speeds. The sprocket ratio on the second chain could be changed to provide non-unity ratios of planet and orbit angular velocity. However, with the arrangement of FIG. 3, the substrate does not rotate relative to the source of depositing material as it passes by the source, thus avoiding possible radial nonuniformity in deposition conditions on the substrate. An equivalent gear linkage could also be used.
  • EXAMPLE
  • Fixturing to practice the invention is installed in a conventional 10−7 Torr stainless-steel or aluminum high-vacuum chamber with elastomer seals and cryopumping, such as manufactured by Leybold and other vendors.
  • The system includes at least two rectangular magnetron sputter sources, such as those manufactured by Leybold, and an ion gun with a 6-inch diameter beam, such as the Kaufman-style guns manufactured by Commonwealth, arranged as described above. The cathodes are oriented 90 degrees to each other. The distance from magnetron target surface to wafer is 1″.
  • The planetary linkage for wafer motion is connected so that the wafers remain in the same rotational orientation about their own normal axes relative to a fixed point as they orbit about the central axis of the chamber.
  • The plate rotating about the central axis carries 6″ wafers on a 10-inch orbiting radius from the center of the plate, and the 14-inch long magnetrons and the ion gun are centered on the wafers. Fixturing is arranged so that the wafers see an even angular distribution and flux of depositing material across their surface.
  • Calibration Process
  • Calibration Step 1:
  • Film stress vs. pressure of an Ar sputtering gas is measured by sputter deposition at various fixed pressures onto thin wafers. The stress is then calculated in a conventional manner by means of the change in curvature of the wafer caused by the deposition. Deposition at the lowest pressure of typically 1 mTorr may be performed with varying fluxes of 200 to 1000 eV Ar ions to increase compressive stress.
  • Calibration Step 2:
  • Deposition of a multilayer structure is carried out using a progression from compressive to tensile stress along the positive-slope portion of the stress-pressure curve. Springs are patterned and lifted, and spring curvature radius calculated from lift height.
  • Typical Parameters
  • Typical parameters used for the deposition are as follows (ranges are shown in brackets):
  • MoCr alloy target, typ. 0-20 at. % Cr: power2400 W (500-10,000), gas flow: Ar 80 sccm (50-500), pressure: 0.6 to 15 mT (0.2-50), rotation: 120 rpm (10-300).
  • Ion Gun: beam current from 50 to 500 mA, ion energy from 200 to 1000 eV.
  • For the first compressive layers, the ion gun and the magnetrons are operated simultaneously in some embodiments.
  • Although the invention is described herein with reference to the preferred embodiment, one skilled in the art will readily appreciate that other applications may be substituted for those set forth herein without departing from the spirit and scope of the present invention. Accordingly, the invention should only be limited by the Claims included below.

Claims (38)

1. A method for depositing a film on a substrate, comprising the steps of:
depositing successive layers of film on said substrate at any of successive different discrete deposition angles of rotation of said substrate and/or of said deposition source about a normal axis of said substrate;
providing a substantially identical amount of deposition from each different deposition angle as for each other deposition angle;
wherein said overall deposited film behaves substantially isotropically in properties in all directions parallel to said substrate and at different angles of rotation about said normal axis.
2. The method of claim 1, further comprising the step of:
reducing the thickness of successive layers of said film on the order of a property projection distance within a depositing material;
wherein said property projection distance comprises a distance at which a fluctuation in a relevant film property from point to point through said film's thickness becomes too small to affect overall properties of said film when averaged through said film's thickness; and
wherein said fluctuation is caused by layering.
3. The method of claim 2, wherein said property projection distance is within a minimum of one atomic diameter of said depositing material to a maximum of ten atomic diameters for stress and strain, and a maximum of one magnetic domain diameter for magnetic properties.
4. The method of claim 1, further comprising the step of:
moving each substrate past a same one or more sources of depositing material in a planetary manner;
wherein each time said substrate passes by one of said sources of depositing material as said substrate executes a planet orbit, said substrate is rotated about said substrate's normal axis with respect to the planet carrier such that it maintains a constant rotational orientation with respect to a stationary point and said depositing material source by which it is passing.
5. The method of claim 4, wherein said substrate is rotated 360/n degrees with respect to the planet carrier plate each time it passes by one of said depositing material sources, wherein n is an integer larger than 2 and equal to the number of deposition sources.
6. The method of claim 4, further comprising the steps of:
providing four depositing material sources arranged about a circle; and
positioning a relevant anisotropic property of each said depositing material source 90 degrees with respect to that of a previous depositing material source;
wherein each substrate maintains a fixed rotational orientation about its normal axis as said substrate orbits, as measured from a stationary point;
wherein said film is deposited in layers having an anisotropy rotated 90 degrees for each successive layer.
7. The method of claim 4, wherein said source of depositing material exhibits two-fold symmetry in a relevant anisotropic property of said depositing material source.
8. The method of claim 7, wherein a 270 degree rotation of said substrate is equivalent to a 90 degree rotation of said substrate with respect to said anisotropy in said relevant property of said film layer.
9. The method of claim 7, further comprising the step of:
providing two depositing material sources;
wherein each depositing material source has two-fold symmetry;
wherein said depositing material sources are disposed relative to one another such that a relevant anisotropic property of said depositing material source is rotated 90 degrees with respect to a previous depositing material source;
wherein each substrate maintains a fixed rotational orientation about its normal axis as it orbits, as measured from a stationary point; and
wherein said film is deposited in layers having an anisotropy rotated 90 degrees for each successive layer.
10. The method of claim 7, wherein said sources of depositing material comprise linear magnetron sputtering targets from which said depositing material emanates in a pattern which approximates a rectangle having rounded corners.
11. The method of claim 10, wherein a distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates is sufficiently smaller than a distance between material as it emanates from an end of said rectangular emanation pattern and a nearest edge of said substrate such that a relevant property of said film is sufficiently uniform along said substrate from a center of said substrate to said substrate's edge.
12. The method of claim 11, further comprising the step of:
making film stress along directions parallel to said substrate sufficiently uniform across said substrate by making a distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates sufficiently small, as compared to a distance between material as it emanates from an end of said rectangular emanation pattern and the nearest edge of the substrate.
13. The method of claim 11, wherein a ratio of distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates to a distance between material as it emanates from an end of said rectangular emanation pattern and a nearest edge of said substrate is ¼ or less.
14. A method for depositing a film on a substrate, comprising the steps of:
symmetrically disposing at least one deposition source at any of successive different deposition angles of rotation of said substrate and of said deposition source about a normal axis of said substrate; and
depositing successive layers of film on said substrate to achieve high levels of stress in said films, wherein said stress is both isotropic in a film plane and uniform over large areas of a substrate surface.
15. The method of claim 14, wherein said depositing step comprises:
providing a monatomic-layer-scale deposition thickness per pass over a deposition source using close-spaced magnetron sputtering from long, substantially rectangular targets or sources of deposition material;
wherein effects on film stress caused by periodic fluctuations in any of deposition incident angle, ion bombardment flux, and substrate azimuthal orientation are minimized.
16. The method of claim 14, further comprising the step of:
rotating said substrate by substantially 90 degrees between successive passes to laminate said film;
wherein X-Y anisotropy in a film plane is eliminated.
17. The method of claim 14, further comprising the step of:
using magnetron targets that are longer, when compared to a substrate diameter, than is needed for uniform film thickness;
wherein uniform film stress along a long axis of said target is achieved.
18. The method of claim 14, further comprising the step of:
providing a drive mechanism comprising a peripheral chain arranged around a ring of substrates, and a chain extending from one substrate to a fixed central sprocket, to impart high speed, planetary motion to said substrate.
19. An apparatus for depositing a film on a substrate, comprising:
a target for depositing successive layers of film on said substrate at any of successive different discrete deposition angles of rotation of said substrate and/or of said deposition source about a normal axis of said substrate;
means for symmetrically disposing a collection of said successive different discrete deposition angles used for an overall deposited film about said normal axis; and
means for providing a substantially identical amount of deposition from each different deposition angle as for each other deposition angle;
wherein said overall deposited film behaves substantially isotropically in properties in all directions parallel to said substrate and at different angles of rotation about said normal axis.
20. The apparatus of claim 19, further comprising:
means for reducing the thickness of successive layers of said film on the order of a property projection distance within a depositing material;
wherein said property projection distance comprises a distance at which a fluctuation in a relevant film property from point to point through said film's thickness becomes too small to affect overall properties of said film when averaged through said film's thickness; and
wherein said fluctuation is caused by layering.
21. The apparatus of claim 20, wherein said property projection distance is within a minimum of one atomic diameter of said depositing material to a maximum of ten atomic diameters for stress and strain, and a maximum of one magnetic domain diameter for magnetic properties.
22. The apparatus of claim 19, further comprising:
a drive for moving each substrate past a same one or more sources of depositing material in a planetary manner;
wherein each time said substrate passes by one of said sources of depositing material as said substrate executes a planet orbit, said substrate has been rotated about said substrate's normal axis with respect to the planet carrier such that it maintains a constant rotational orientation with respect to a stationary point and to said depositing material source by which it is passing.
23. The apparatus of claim 22, wherein said substrate is rotated 360/n degrees with respect to the planet carrier plate each time it passes by one of said depositing material sources, wherein n is an integer larger than 2 and equal to the number of deposition sources.
24. The apparatus of claim 22, further comprising:
four depositing material sources arranged about a circle; and
means for positioning a relevant anisotropic property of each said depositing material source 90 degrees with respect to that of a previous depositing material source;
wherein each substrate maintains a fixed rotational orientation about its normal axis as said substrate orbits, as measured from a stationary point;
wherein said film is deposited in layers having an anisotropy rotated 90 degrees for each successive layer.
25. The apparatus of claim 22, wherein said source of depositing material exhibits two-fold symmetry in a relevant anisotropic property of said depositing material.
26. The apparatus of claim 25, wherein a 270 degree rotation of said substrate is equivalent to a 90 degree rotation of said substrate with respect to said anisotropy in said relevant property of said film layer.
27. The apparatus of claim 25, further comprising:
two depositing material sources;
wherein each depositing material source has two-fold symmetry;
wherein said depositing material sources are disposed relative to one another such that a relevant anisotropic property of said depositing material source is rotated 90 degrees with respect to a previous depositing material source;
wherein each substrate maintains a fixed rotational orientation about its normal axis as it orbits, as measured from a stationary point; and
wherein said film is deposited in layers having an anisotropy rotated 90 degrees for each successive layer.
28. The apparatus of claim 25, wherein said sources of depositing material comprise linear magnetron sputtering targets from said depositing material emanates in a pattern which approximates a rectangle having rounded corners.
29. The apparatus of claim 28, wherein a distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates is sufficiently smaller than a distance between material as it emanates from an end of said rectangular emanation pattern and a nearest edge of said substrate such that a relevant property of said film is sufficiently uniform along said substrate from a center of said substrate to said substrate's edge.
30. The apparatus of claim 29, further comprising:
means for making film stress along directions parallel to said substrate sufficiently uniform across said substrate by making a distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates sufficiently small, as compared to a distance between material as it emanates from an end of said rectangular emanation pattern and the nearest edge of the substrate.
31. The apparatus of claim 29, wherein a ratio of distance along a substrate normal axis and between a substrate surface and a target surface from which depositing material emanates to a distance between material as it emanates from an end of said rectangular emanation pattern and a nearest edge of said substrate is ¼ or less.
32. An apparatus for depositing a film on a substrate, comprising:
means for symmetrically disposing at least one deposition source at any of successive different deposition angles of rotation of said substrate and of said deposition source about a normal axis of said substrate; and
a target for depositing successive layers of film on said substrate to achieve high levels of stress in said films, wherein said stress is both isotropic in a film plane and uniform over large areas of a substrate surface.
33. The apparatus of claim 32, wherein said target comprises:
means for providing a monatomic-layer-scale deposition thickness per pass over a target using close-spaced magnetron sputtering from long, substantially rectangular targets;
wherein effects on film stress caused by periodic fluctuations in any of deposition incident angle, ion bombardment flux, and substrate azimuthal orientation are minimized.
34. The apparatus of claim 32, further comprising:
a drive for rotating said substrate by substantially 90 degrees between successive passes to laminate said film;
wherein X-Y anisotropy in a film plane is eliminated.
35. The apparatus of claim 32, further comprising:
one or more magnetron targets that are longer, when compared to a substrate diameter, than is needed for uniform film thickness;
wherein uniform film stress along a long axis of said target is achieved.
36. The method of claim 32, further comprising:
a drive mechanism comprising a peripheral chain arranged around a ring of substrates, and a chain extending from one substrate to a fixed central sprocket, to impart high speed, planetary motion to said substrate.
37. A drive mechanism, comprising:
a fixed central, driven sprocket;
a peripheral chain arranged around a ring of substrates; and a chain extending from one substrate to said fixed central sprocket, to impart high speed, planetary motion to said substrate.
38. A substrate having a film deposited thereon in accordance with the process of claim 1.
US11/563,664 2001-08-24 2006-11-27 Method and Apparatus for Producing Uniform, Isotropic Stresses in a Sputtered Film Abandoned US20070098895A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/563,664 US20070098895A1 (en) 2001-08-24 2006-11-27 Method and Apparatus for Producing Uniform, Isotropic Stresses in a Sputtered Film

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US31477601P 2001-08-24 2001-08-24
PCT/US2002/026785 WO2003018865A1 (en) 2001-08-24 2002-08-23 Method and apparatus for producing uniform isotropic stresses in a sputtered film
US10/487,652 US7153399B2 (en) 2001-08-24 2002-08-23 Method and apparatus for producing uniform isotropic stresses in a sputtered film
US11/563,664 US20070098895A1 (en) 2001-08-24 2006-11-27 Method and Apparatus for Producing Uniform, Isotropic Stresses in a Sputtered Film

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
US10/487,652 Division US7153399B2 (en) 2001-08-24 2002-08-23 Method and apparatus for producing uniform isotropic stresses in a sputtered film
PCT/US2002/026785 Division WO2003018865A1 (en) 2001-08-24 2002-08-23 Method and apparatus for producing uniform isotropic stresses in a sputtered film

Publications (1)

Publication Number Publication Date
US20070098895A1 true US20070098895A1 (en) 2007-05-03

Family

ID=23221391

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/487,652 Expired - Fee Related US7153399B2 (en) 2001-08-24 2002-08-23 Method and apparatus for producing uniform isotropic stresses in a sputtered film
US11/563,664 Abandoned US20070098895A1 (en) 2001-08-24 2006-11-27 Method and Apparatus for Producing Uniform, Isotropic Stresses in a Sputtered Film

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US10/487,652 Expired - Fee Related US7153399B2 (en) 2001-08-24 2002-08-23 Method and apparatus for producing uniform isotropic stresses in a sputtered film

Country Status (6)

Country Link
US (2) US7153399B2 (en)
EP (1) EP1419285A4 (en)
JP (1) JP3794586B2 (en)
KR (1) KR20040044459A (en)
CN (1) CN1575350A (en)
WO (1) WO2003018865A1 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090253891A1 (en) * 2004-10-19 2009-10-08 Nitto Denko Corporation Cleaning substrate of substrate processing equipment and heat resistant resin preferable thereof
US20110100806A1 (en) * 2008-06-17 2011-05-05 Shincron Co., Ltd. Bias sputtering device
US20110247553A1 (en) * 2010-04-07 2011-10-13 Hon Hai Precision Industry Co., Ltd. Coating device
US20120055399A1 (en) * 2010-09-07 2012-03-08 Magna International Inc. Paint cart with rotating part support
US20120097106A1 (en) * 2010-10-26 2012-04-26 Hon Hai Precision Industry Co., Ltd. Physical vapor deposition device for coating workpiece
CN102443766A (en) * 2010-10-15 2012-05-09 鸿富锦精密工业(深圳)有限公司 Film coating material frame and film coating equipment with same
US20120211353A1 (en) * 2011-02-22 2012-08-23 Hon Hai Precision Industry Co., Ltd. Method of coating metal shell with pure white film
US9230846B2 (en) * 2010-06-07 2016-01-05 Veeco Instruments, Inc. Multi-wafer rotating disc reactor with inertial planetary drive
US10808319B1 (en) * 2010-02-26 2020-10-20 Quantum Innovations, Inc. System and method for vapor deposition of substrates with circular substrate frame that rotates in a planetary motion and curved lens support arms
US20210180187A1 (en) * 2019-12-11 2021-06-17 Tokyo Electron Limited Rotational drive device, substrate processing apparatus, and rotational driving method
US20210214845A1 (en) * 2020-01-15 2021-07-15 Tokyo Electron Limited Substrate processing apparatus and rotary drive method

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7137830B2 (en) 2002-03-18 2006-11-21 Nanonexus, Inc. Miniaturized contact spring
ITFI20020042A1 (en) * 2002-03-08 2002-06-06 Galileo Vacuum Systems S R L PLANT FOR THE VACUUM METALLIZATION OF OBJECTS PROCESSED IN LOTS
GB0215699D0 (en) * 2002-07-06 2002-08-14 Trikon Holdings Ltd Deposition methods and apparatus
WO2004015162A1 (en) * 2002-08-09 2004-02-19 Kabushiki Kaisha Kobe Seiko Sho METHOD FOR PREPARING ALUMNA COATING FILM HAVING α-TYPE CRYSTAL STRUCTURE AS PRIMARY STRUCTURE
DE102004027989B4 (en) * 2004-06-09 2007-05-10 Esser, Stefan, Dr.-Ing. Workpiece carrier device for holding workpieces
WO2007011751A2 (en) * 2005-07-14 2007-01-25 Nanonexus, Inc. Method and apparatus for producing controlled stresses and stress gradients in sputtered films
US20080305267A1 (en) * 2007-06-05 2008-12-11 Gray H Robert Method and apparatus for low cost high rate deposition tooling
JP5259626B2 (en) * 2007-12-26 2013-08-07 キヤノンアネルバ株式会社 Sputtering apparatus, sputtering film forming method
CN101818326B (en) * 2009-02-26 2012-11-21 鸿富锦精密工业(深圳)有限公司 Sputtering device
TWI391514B (en) * 2009-07-16 2013-04-01 Univ Nat Sun Yat Sen Magnetron sputter
JP5364172B2 (en) * 2009-11-10 2013-12-11 キヤノンアネルバ株式会社 Film forming method using sputtering apparatus and sputtering apparatus
KR101188863B1 (en) 2009-12-23 2012-10-08 주식회사 코리아 인스트루먼트 Substrate Transfering Apparatus for Chamber System and Chamber System thereof
KR20120065841A (en) * 2010-12-13 2012-06-21 삼성전자주식회사 Substrate support unit, and apparatus for depositing thin layer using the same
KR101794586B1 (en) * 2011-05-23 2017-11-08 삼성디스플레이 주식회사 Separated target apparatus for sputtering and sputtering method using the same
KR101292399B1 (en) * 2011-12-19 2013-08-01 주식회사 케이씨텍 Atomic layer deposition apparatus having susceptor capable of rotation and revolution
CN103245437B (en) * 2012-02-13 2017-02-08 付康 System and method for determining nonlinear membrane stress
CN103290373B (en) * 2013-05-14 2016-09-14 宁波韵升股份有限公司 A kind of horizontal type multi-target vacuum sputtering or ion plating machine
US20160209326A1 (en) * 2013-12-24 2016-07-21 Halliburton Energy Services, Inc. Spatially-resolved monitoring of fabrication of integrated computational elements
MX361644B (en) * 2013-12-24 2018-12-13 Halliburton Energy Services Inc Real-time monitoring of fabrication of integrated computational elements.
CN105679528B (en) * 2014-11-18 2017-12-12 中国科学院宁波材料技术与工程研究所 A kind of making apparatus of the regulatable large area flexible thin magnetic film of magnetic anisotropy
US20200203071A1 (en) * 2017-04-27 2020-06-25 Evatec Ag Soft magnetic multilayer desposition apparatus, methods of manufacturing and magnetic multilayer
JP7101536B2 (en) * 2018-05-16 2022-07-15 東京エレクトロン株式会社 Film forming equipment and film forming method
US20220235451A1 (en) * 2019-05-07 2022-07-28 Oerlikon Surface Solutions Ag, Pfäffikon Movable work piece carrier device for holding work pieces to be treated
CN112556906B (en) * 2020-10-29 2021-12-24 瑞声新能源发展(常州)有限公司科教城分公司 Method for measuring stress gradients of film in different directions
CN113481480A (en) * 2021-06-30 2021-10-08 华南理工大学 Preparation method of low-stress insulating barrier corrosion-resistant coating
CN113789501B (en) * 2021-09-09 2023-07-25 比尔安达(上海)润滑材料有限公司 Method and system for forming multi-nano coating on surface of shaver cap
CN114621698B (en) * 2022-03-02 2023-06-02 业成科技(成都)有限公司 Film material and laminating method
CN115125506B (en) * 2022-08-30 2023-03-24 江苏浩纳光电股份有限公司 Lens frame rotation driving device of lens vacuum coating machine

Citations (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806800A (en) * 1972-12-26 1974-04-23 Ibm Method and apparatus for determining the location of electrically conductive members on a structure
US3939414A (en) * 1974-01-28 1976-02-17 Electroglas, Inc. Micro-circuit test apparatus
US4195259A (en) * 1978-04-04 1980-03-25 Texas Instruments Incorporated Multiprobe test system and method of using same
US4320438A (en) * 1980-05-15 1982-03-16 Cts Corporation Multi-layer ceramic package
US4436602A (en) * 1981-11-27 1984-03-13 Varian Associates, Inc. Blocking shield and method for contouring the thickness of sputter coated layers
US4508612A (en) * 1984-03-07 1985-04-02 International Business Machines Corporation Shield for improved magnetron sputter deposition into surface recesses
US4567432A (en) * 1983-06-09 1986-01-28 Texas Instruments Incorporated Apparatus for testing integrated circuits
US4636722A (en) * 1984-05-21 1987-01-13 Probe-Rite, Inc. High density probe-head with isolated and shielded transmission lines
US4647852A (en) * 1985-09-25 1987-03-03 Burroughs Corporation Contact probe assembly
US4661233A (en) * 1985-07-05 1987-04-28 Westinghouse Electric Corp. Cathode/ground shield arrangement in a sputter coating apparatus
US4719417A (en) * 1983-05-03 1988-01-12 Wentworth Laboratories, Inc. Multi-level test probe assembly for IC chips
US4724377A (en) * 1982-11-05 1988-02-09 Martin Maelzer Apparatus for testing electrical printed circuit boards
US4816754A (en) * 1986-04-29 1989-03-28 International Business Machines Corporation Contactor and probe assembly for electrical test apparatus
US4908571A (en) * 1987-05-26 1990-03-13 International Business Machines Corporation Contact probe assembly with fine positioning means
US5084672A (en) * 1989-02-21 1992-01-28 Giga Probe, Inc. Multi-point probe assembly for testing electronic device
US5103557A (en) * 1988-05-16 1992-04-14 Leedy Glenn J Making and testing an integrated circuit using high density probe points
US5189363A (en) * 1990-09-14 1993-02-23 Ibm Corporation Integrated circuit testing system having a cantilevered contact lead probe pattern mounted on a flexible tape for interconnecting an integrated circuit to a tester
US5191708A (en) * 1990-06-20 1993-03-09 Hitachi, Ltd. Manufacturing method of a probe head for semiconductor LSI inspection apparatus
US5278442A (en) * 1991-07-15 1994-01-11 Prinz Fritz B Electronic packages and smart structures formed by thermal spray deposition
US5280139A (en) * 1990-03-01 1994-01-18 Motorola, Inc. Selectively releasing conductive runner and substrate assembly
US5385477A (en) * 1993-07-30 1995-01-31 Ck Technologies, Inc. Contactor with elastomer encapsulated probes
US5395253A (en) * 1993-04-29 1995-03-07 Hughes Aircraft Company Membrane connector with stretch induced micro scrub
US5489852A (en) * 1992-11-06 1996-02-06 Advanced Micro Devices, Inc. System for interfacing wafer sort prober apparatus and packaged IC handler apparatus to a common test computer
US5600257A (en) * 1995-08-09 1997-02-04 International Business Machines Corporation Semiconductor wafer test and burn-in
US5613861A (en) * 1995-06-07 1997-03-25 Xerox Corporation Photolithographically patterned spring contact
US5621373A (en) * 1995-08-14 1997-04-15 G & H Technology, Inc. Non-explosive initiator with link wire assembly
US5621333A (en) * 1995-05-19 1997-04-15 Microconnect, Inc. Contact device for making connection to an electronic circuit device
US5707575A (en) * 1994-07-28 1998-01-13 Micro Substrates Corporation Method for filling vias in ceramic substrates with composite metallic paste
US5744283A (en) * 1994-04-12 1998-04-28 U.S. Philips Corporation Method of photolithographically metallizing at least the inside of holes arranged in accordance with a pattern in a plate of an electrically insulating material
US5864946A (en) * 1993-11-16 1999-02-02 Form Factor, Inc. Method of making contact tip structures
US5869974A (en) * 1996-04-01 1999-02-09 Micron Technology, Inc. Micromachined probe card having compliant contact members for testing semiconductor wafers
US5878486A (en) * 1993-11-16 1999-03-09 Formfactor, Inc. Method of burning-in semiconductor devices
US5886535A (en) * 1996-11-08 1999-03-23 W. L. Gore & Associates, Inc. Wafer level burn-in base unit substrate and assembly
US5884395A (en) * 1997-04-04 1999-03-23 Probe Technology Assembly structure for making integrated circuit chip probe cards
US5896038A (en) * 1996-11-08 1999-04-20 W. L. Gore & Associates, Inc. Method of wafer level burn-in
US5897326A (en) * 1993-11-16 1999-04-27 Eldridge; Benjamin N. Method of exercising semiconductor devices
US6010600A (en) * 1996-02-22 2000-01-04 The Regents Of The University Of California Maskless deposition technique for the physical vapor deposition of thin film and multilayer coatings with subnanometer precision and accuracy
US6014032A (en) * 1997-09-30 2000-01-11 International Business Machines Corporation Micro probe ring assembly and method of fabrication
US6012224A (en) * 1994-07-07 2000-01-11 Tessera, Inc. Method of forming compliant microelectronic mounting device
US6020220A (en) * 1996-07-09 2000-02-01 Tessera, Inc. Compliant semiconductor chip assemblies and methods of making same
US6023103A (en) * 1994-11-15 2000-02-08 Formfactor, Inc. Chip-scale carrier for semiconductor devices including mounted spring contacts
US6028437A (en) * 1997-05-19 2000-02-22 Si Diamond Technology, Inc. Probe head assembly
US6030856A (en) * 1996-06-10 2000-02-29 Tessera, Inc. Bondable compliant pads for packaging of a semiconductor chip and method therefor
US6029344A (en) * 1993-11-16 2000-02-29 Formfactor, Inc. Composite interconnection element for microelectronic components, and method of making same
US6033935A (en) * 1997-06-30 2000-03-07 Formfactor, Inc. Sockets for "springed" semiconductor devices
US6043563A (en) * 1997-05-06 2000-03-28 Formfactor, Inc. Electronic components with terminals and spring contact elements extending from areas which are remote from the terminals
US6042712A (en) * 1995-05-26 2000-03-28 Formfactor, Inc. Apparatus for controlling plating over a face of a substrate
US6045655A (en) * 1993-10-26 2000-04-04 Tessera, Inc. Method of mounting a connection component on a semiconductor chip with adhesives
US6045395A (en) * 1997-02-05 2000-04-04 Sumitomo Wiring Systems, Ltd. Lock detecting connector
US6046076A (en) * 1994-12-29 2000-04-04 Tessera, Inc. Vacuum dispense method for dispensing an encapsulant and machine therefor
US6044548A (en) * 1994-02-01 2000-04-04 Tessera, Inc. Methods of making connections to a microelectronic unit
US6049972A (en) * 1997-03-04 2000-04-18 Tessera, Inc. Universal unit strip/carrier frame assembly and methods
US6049976A (en) * 1993-11-16 2000-04-18 Formfactor, Inc. Method of mounting free-standing resilient electrical contact structures to electronic components
US6050829A (en) * 1996-08-28 2000-04-18 Formfactor, Inc. Making discrete power connections to a space transformer of a probe card assembly
US6054756A (en) * 1992-07-24 2000-04-25 Tessera, Inc. Connection components with frangible leads and bus
US6054337A (en) * 1996-12-13 2000-04-25 Tessera, Inc. Method of making a compliant multichip package
US6169411B1 (en) * 1994-01-06 2001-01-02 Agilent Technologies Integrated circuit testing assembly and method
US6184053B1 (en) * 1993-11-16 2001-02-06 Formfactor, Inc. Method of making microelectronic spring contact elements
US6183267B1 (en) * 1999-03-11 2001-02-06 Murray Hill Devices Ultra-miniature electrical contacts and method of manufacture
US6190513B1 (en) * 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6192982B1 (en) * 1998-09-08 2001-02-27 Westbay Instruments, Inc. System for individual inflation and deflation of borehole packers
US6203331B1 (en) * 1999-11-05 2001-03-20 Hon Hai Precision Ind. Co., Ltd. Land grid array connector having a floating housing
US6204674B1 (en) * 1997-10-31 2001-03-20 Probe Technology, Inc. Assembly structure for making integrated circuit chip probe cards
US6215321B1 (en) * 1997-11-25 2001-04-10 Matsushita Electric Industrial Co., Ltd. Probe card for wafer-level measurement, multilayer ceramic wiring board, and fabricating methods therefor
US6213789B1 (en) * 1999-12-15 2001-04-10 Xerox Corporation Method and apparatus for interconnecting devices using an adhesive
US6215320B1 (en) * 1998-10-23 2001-04-10 Teradyne, Inc. High density printed circuit board
US6218033B1 (en) * 1996-02-26 2001-04-17 Akashic Memories Corporation Magnetic recording media having CrTiX underlayers to reduce circumferential/radial anisotropy and methods for their production
US6218910B1 (en) * 1999-02-25 2001-04-17 Formfactor, Inc. High bandwidth passive integrated circuit tester probe card assembly
US20020000016A1 (en) * 2000-06-29 2002-01-03 Tung-Chiang Hsieh Structure of a brush
US20020000013A1 (en) * 2000-04-18 2002-01-03 Fumio Sugaya Dry chemical analysis element cartridge
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6340320B1 (en) * 1998-12-18 2002-01-22 Honda Tsushin Kogyo Co., Ltd. Probe pin assembly, a method of making the same and a connector using the same
US20020013070A1 (en) * 2000-07-27 2002-01-31 Xerox Corporation Spring structure with self-aligned release material
US6347947B1 (en) * 2000-07-03 2002-02-19 Advanced Interconnect Solutions Method and apparatus for protecting and strengthening electrical contact interfaces
US6351133B1 (en) * 1999-03-31 2002-02-26 Adoamtest Corp. Packaging and interconnection of contact structure
US6352454B1 (en) * 1999-10-20 2002-03-05 Xerox Corporation Wear-resistant spring contacts
US6356098B1 (en) * 1998-02-23 2002-03-12 Micron Technology, Inc. Probe card, test method and test system for semiconductor wafers
US6358376B1 (en) * 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
US20030000010A1 (en) * 2001-06-29 2003-01-02 Hideo Shimizu Blow-off nozzle type bathtub with illumination
US20030010615A1 (en) * 2001-07-11 2003-01-16 Xerox Corporation Microspring with conductive coating deposited on tip after release
US6509751B1 (en) * 2000-03-17 2003-01-21 Formfactor, Inc. Planarizer for a semiconductor contactor
US6520778B1 (en) * 1997-02-18 2003-02-18 Formfactor, Inc. Microelectronic contact structures, and methods of making same
US6525555B1 (en) * 1993-11-16 2003-02-25 Formfactor, Inc. Wafer-level burn-in and test
US6528350B2 (en) * 2001-05-21 2003-03-04 Xerox Corporation Method for fabricating a metal plated spring structure
US6528984B2 (en) * 1996-09-13 2003-03-04 Ibm Corporation Integrated compliant probe for wafer level test and burn-in
US20030071348A1 (en) * 2000-01-27 2003-04-17 Shuji Eguchi Semiconductor module and mounting method for same
US6684499B2 (en) * 2002-01-07 2004-02-03 Xerox Corporation Method for fabricating a spring structure
US20040058487A1 (en) * 1999-06-07 2004-03-25 Formfactor, Inc. Segmented contactor
US6844214B1 (en) * 2003-08-21 2005-01-18 Xerox, Corporation Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication
US20050012513A1 (en) * 2003-07-17 2005-01-20 Shih-Jye Cheng Probe card assembly
US6847218B1 (en) * 2002-05-13 2005-01-25 Cypress Semiconductor Corporation Probe card with an adapter layer for testing integrated circuits
US6856150B2 (en) * 2001-04-10 2005-02-15 Formfactor, Inc. Probe card with coplanar daughter card
US6856225B1 (en) * 2000-05-17 2005-02-15 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US7009412B2 (en) * 1999-05-27 2006-03-07 Nanonexus, Inc. Massively parallel interface for electronic circuit

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3635811A (en) * 1967-11-06 1972-01-18 Warner Lambert Co Method of applying a coating
US3856647A (en) * 1973-05-15 1974-12-24 Ibm Multi-layer control or stress in thin films
US4834855A (en) 1985-05-02 1989-05-30 Hewlett-Packard Company Method for sputter depositing thin films
US4714536A (en) * 1985-08-26 1987-12-22 Varian Associates, Inc. Planar magnetron sputtering device with combined circumferential and radial movement of magnetic fields
US5798027A (en) * 1988-02-08 1998-08-25 Optical Coating Laboratory, Inc. Process for depositing optical thin films on both planar and non-planar substrates
US5154810A (en) * 1991-01-29 1992-10-13 Optical Coating Laboratory, Inc. Thin film coating and method
US5656138A (en) 1991-06-18 1997-08-12 The Optical Corporation Of America Very high vacuum magnetron sputtering method and apparatus for precision optical coatings
US5240583A (en) 1992-01-14 1993-08-31 Honeywell Inc. Apparatus to deposit multilayer films
JPH06220609A (en) * 1992-07-31 1994-08-09 Sony Corp Magnetoresistance effect film, its production, magnetoresistance effect element using the film and magnetoresistance effect-type magnetic head
JP3458450B2 (en) 1994-04-26 2003-10-20 三菱化学株式会社 Sputtering method
JP3578872B2 (en) * 1995-10-26 2004-10-20 三菱電機株式会社 X-ray mask manufacturing method and heating apparatus
US5830327A (en) * 1996-10-02 1998-11-03 Intevac, Inc. Methods and apparatus for sputtering with rotating magnet sputter sources
JPH10134438A (en) 1996-10-31 1998-05-22 Sony Corp Production of magneto-optical recording medium
JP2001020067A (en) 1999-07-09 2001-01-23 Matsushita Electric Ind Co Ltd Sputtering method and device
US6524449B1 (en) * 1999-12-03 2003-02-25 James A. Folta Method and system for producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients
US6497799B1 (en) * 2000-04-14 2002-12-24 Seagate Technology Llc Method and apparatus for sputter deposition of multilayer films

Patent Citations (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806800A (en) * 1972-12-26 1974-04-23 Ibm Method and apparatus for determining the location of electrically conductive members on a structure
US3939414A (en) * 1974-01-28 1976-02-17 Electroglas, Inc. Micro-circuit test apparatus
US4195259A (en) * 1978-04-04 1980-03-25 Texas Instruments Incorporated Multiprobe test system and method of using same
US4320438A (en) * 1980-05-15 1982-03-16 Cts Corporation Multi-layer ceramic package
US4436602A (en) * 1981-11-27 1984-03-13 Varian Associates, Inc. Blocking shield and method for contouring the thickness of sputter coated layers
US4724377A (en) * 1982-11-05 1988-02-09 Martin Maelzer Apparatus for testing electrical printed circuit boards
US4719417A (en) * 1983-05-03 1988-01-12 Wentworth Laboratories, Inc. Multi-level test probe assembly for IC chips
US4567432A (en) * 1983-06-09 1986-01-28 Texas Instruments Incorporated Apparatus for testing integrated circuits
US4508612A (en) * 1984-03-07 1985-04-02 International Business Machines Corporation Shield for improved magnetron sputter deposition into surface recesses
US4636722A (en) * 1984-05-21 1987-01-13 Probe-Rite, Inc. High density probe-head with isolated and shielded transmission lines
US4661233A (en) * 1985-07-05 1987-04-28 Westinghouse Electric Corp. Cathode/ground shield arrangement in a sputter coating apparatus
US4647852A (en) * 1985-09-25 1987-03-03 Burroughs Corporation Contact probe assembly
US4816754A (en) * 1986-04-29 1989-03-28 International Business Machines Corporation Contactor and probe assembly for electrical test apparatus
US4908571A (en) * 1987-05-26 1990-03-13 International Business Machines Corporation Contact probe assembly with fine positioning means
US5103557A (en) * 1988-05-16 1992-04-14 Leedy Glenn J Making and testing an integrated circuit using high density probe points
US5084672A (en) * 1989-02-21 1992-01-28 Giga Probe, Inc. Multi-point probe assembly for testing electronic device
US5280139A (en) * 1990-03-01 1994-01-18 Motorola, Inc. Selectively releasing conductive runner and substrate assembly
US5191708A (en) * 1990-06-20 1993-03-09 Hitachi, Ltd. Manufacturing method of a probe head for semiconductor LSI inspection apparatus
US5189363A (en) * 1990-09-14 1993-02-23 Ibm Corporation Integrated circuit testing system having a cantilevered contact lead probe pattern mounted on a flexible tape for interconnecting an integrated circuit to a tester
US5278442A (en) * 1991-07-15 1994-01-11 Prinz Fritz B Electronic packages and smart structures formed by thermal spray deposition
US6054756A (en) * 1992-07-24 2000-04-25 Tessera, Inc. Connection components with frangible leads and bus
US5489852A (en) * 1992-11-06 1996-02-06 Advanced Micro Devices, Inc. System for interfacing wafer sort prober apparatus and packaged IC handler apparatus to a common test computer
US5395253A (en) * 1993-04-29 1995-03-07 Hughes Aircraft Company Membrane connector with stretch induced micro scrub
US5385477A (en) * 1993-07-30 1995-01-31 Ck Technologies, Inc. Contactor with elastomer encapsulated probes
US6045655A (en) * 1993-10-26 2000-04-04 Tessera, Inc. Method of mounting a connection component on a semiconductor chip with adhesives
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6029344A (en) * 1993-11-16 2000-02-29 Formfactor, Inc. Composite interconnection element for microelectronic components, and method of making same
US6525555B1 (en) * 1993-11-16 2003-02-25 Formfactor, Inc. Wafer-level burn-in and test
US5864946A (en) * 1993-11-16 1999-02-02 Form Factor, Inc. Method of making contact tip structures
US5878486A (en) * 1993-11-16 1999-03-09 Formfactor, Inc. Method of burning-in semiconductor devices
US6184053B1 (en) * 1993-11-16 2001-02-06 Formfactor, Inc. Method of making microelectronic spring contact elements
US5897326A (en) * 1993-11-16 1999-04-27 Eldridge; Benjamin N. Method of exercising semiconductor devices
US6032356A (en) * 1993-11-16 2000-03-07 Formfactor. Inc. Wafer-level test and burn-in, and semiconductor process
US6049976A (en) * 1993-11-16 2000-04-18 Formfactor, Inc. Method of mounting free-standing resilient electrical contact structures to electronic components
US6169411B1 (en) * 1994-01-06 2001-01-02 Agilent Technologies Integrated circuit testing assembly and method
US6044548A (en) * 1994-02-01 2000-04-04 Tessera, Inc. Methods of making connections to a microelectronic unit
US5744283A (en) * 1994-04-12 1998-04-28 U.S. Philips Corporation Method of photolithographically metallizing at least the inside of holes arranged in accordance with a pattern in a plate of an electrically insulating material
US6012224A (en) * 1994-07-07 2000-01-11 Tessera, Inc. Method of forming compliant microelectronic mounting device
US5707575A (en) * 1994-07-28 1998-01-13 Micro Substrates Corporation Method for filling vias in ceramic substrates with composite metallic paste
US6023103A (en) * 1994-11-15 2000-02-08 Formfactor, Inc. Chip-scale carrier for semiconductor devices including mounted spring contacts
US6046076A (en) * 1994-12-29 2000-04-04 Tessera, Inc. Vacuum dispense method for dispensing an encapsulant and machine therefor
US5621333A (en) * 1995-05-19 1997-04-15 Microconnect, Inc. Contact device for making connection to an electronic circuit device
US6042712A (en) * 1995-05-26 2000-03-28 Formfactor, Inc. Apparatus for controlling plating over a face of a substrate
US6184699B1 (en) * 1995-06-07 2001-02-06 Xerox Corporation Photolithographically patterned spring contact
US5613861A (en) * 1995-06-07 1997-03-25 Xerox Corporation Photolithographically patterned spring contact
US5600257A (en) * 1995-08-09 1997-02-04 International Business Machines Corporation Semiconductor wafer test and burn-in
US5621373A (en) * 1995-08-14 1997-04-15 G & H Technology, Inc. Non-explosive initiator with link wire assembly
US6010600A (en) * 1996-02-22 2000-01-04 The Regents Of The University Of California Maskless deposition technique for the physical vapor deposition of thin film and multilayer coatings with subnanometer precision and accuracy
US6218033B1 (en) * 1996-02-26 2001-04-17 Akashic Memories Corporation Magnetic recording media having CrTiX underlayers to reduce circumferential/radial anisotropy and methods for their production
US5869974A (en) * 1996-04-01 1999-02-09 Micron Technology, Inc. Micromachined probe card having compliant contact members for testing semiconductor wafers
US6030856A (en) * 1996-06-10 2000-02-29 Tessera, Inc. Bondable compliant pads for packaging of a semiconductor chip and method therefor
US6020220A (en) * 1996-07-09 2000-02-01 Tessera, Inc. Compliant semiconductor chip assemblies and methods of making same
US6050829A (en) * 1996-08-28 2000-04-18 Formfactor, Inc. Making discrete power connections to a space transformer of a probe card assembly
US6528984B2 (en) * 1996-09-13 2003-03-04 Ibm Corporation Integrated compliant probe for wafer level test and burn-in
US5896038A (en) * 1996-11-08 1999-04-20 W. L. Gore & Associates, Inc. Method of wafer level burn-in
US5886535A (en) * 1996-11-08 1999-03-23 W. L. Gore & Associates, Inc. Wafer level burn-in base unit substrate and assembly
US6054337A (en) * 1996-12-13 2000-04-25 Tessera, Inc. Method of making a compliant multichip package
US6045395A (en) * 1997-02-05 2000-04-04 Sumitomo Wiring Systems, Ltd. Lock detecting connector
US6520778B1 (en) * 1997-02-18 2003-02-18 Formfactor, Inc. Microelectronic contact structures, and methods of making same
US6049972A (en) * 1997-03-04 2000-04-18 Tessera, Inc. Universal unit strip/carrier frame assembly and methods
US5884395A (en) * 1997-04-04 1999-03-23 Probe Technology Assembly structure for making integrated circuit chip probe cards
US6043563A (en) * 1997-05-06 2000-03-28 Formfactor, Inc. Electronic components with terminals and spring contact elements extending from areas which are remote from the terminals
US6190513B1 (en) * 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6028437A (en) * 1997-05-19 2000-02-22 Si Diamond Technology, Inc. Probe head assembly
US6534856B1 (en) * 1997-06-30 2003-03-18 Formfactor, Inc. Sockets for “springed” semiconductor devices
US6033935A (en) * 1997-06-30 2000-03-07 Formfactor, Inc. Sockets for "springed" semiconductor devices
US6014032A (en) * 1997-09-30 2000-01-11 International Business Machines Corporation Micro probe ring assembly and method of fabrication
US6204674B1 (en) * 1997-10-31 2001-03-20 Probe Technology, Inc. Assembly structure for making integrated circuit chip probe cards
US6215321B1 (en) * 1997-11-25 2001-04-10 Matsushita Electric Industrial Co., Ltd. Probe card for wafer-level measurement, multilayer ceramic wiring board, and fabricating methods therefor
US6356098B1 (en) * 1998-02-23 2002-03-12 Micron Technology, Inc. Probe card, test method and test system for semiconductor wafers
US6192982B1 (en) * 1998-09-08 2001-02-27 Westbay Instruments, Inc. System for individual inflation and deflation of borehole packers
US6215320B1 (en) * 1998-10-23 2001-04-10 Teradyne, Inc. High density printed circuit board
US6340320B1 (en) * 1998-12-18 2002-01-22 Honda Tsushin Kogyo Co., Ltd. Probe pin assembly, a method of making the same and a connector using the same
US6218910B1 (en) * 1999-02-25 2001-04-17 Formfactor, Inc. High bandwidth passive integrated circuit tester probe card assembly
US6183267B1 (en) * 1999-03-11 2001-02-06 Murray Hill Devices Ultra-miniature electrical contacts and method of manufacture
US6351133B1 (en) * 1999-03-31 2002-02-26 Adoamtest Corp. Packaging and interconnection of contact structure
US7009412B2 (en) * 1999-05-27 2006-03-07 Nanonexus, Inc. Massively parallel interface for electronic circuit
US20040058487A1 (en) * 1999-06-07 2004-03-25 Formfactor, Inc. Segmented contactor
US6352454B1 (en) * 1999-10-20 2002-03-05 Xerox Corporation Wear-resistant spring contacts
US6203331B1 (en) * 1999-11-05 2001-03-20 Hon Hai Precision Ind. Co., Ltd. Land grid array connector having a floating housing
US6213789B1 (en) * 1999-12-15 2001-04-10 Xerox Corporation Method and apparatus for interconnecting devices using an adhesive
US20030071348A1 (en) * 2000-01-27 2003-04-17 Shuji Eguchi Semiconductor module and mounting method for same
US6509751B1 (en) * 2000-03-17 2003-01-21 Formfactor, Inc. Planarizer for a semiconductor contactor
US20020000013A1 (en) * 2000-04-18 2002-01-03 Fumio Sugaya Dry chemical analysis element cartridge
US6856225B1 (en) * 2000-05-17 2005-02-15 Xerox Corporation Photolithographically-patterned out-of-plane coil structures and method of making
US20020000016A1 (en) * 2000-06-29 2002-01-03 Tung-Chiang Hsieh Structure of a brush
US6347947B1 (en) * 2000-07-03 2002-02-19 Advanced Interconnect Solutions Method and apparatus for protecting and strengthening electrical contact interfaces
US6358376B1 (en) * 2000-07-10 2002-03-19 Applied Materials, Inc. Biased shield in a magnetron sputter reactor
US6361331B2 (en) * 2000-07-27 2002-03-26 Xerox Corporation Spring structure with self-aligned release material
US20020016095A1 (en) * 2000-07-27 2002-02-07 Xerox Corporation Spring structure with self-aligned release material
US20020013070A1 (en) * 2000-07-27 2002-01-31 Xerox Corporation Spring structure with self-aligned release material
US6856150B2 (en) * 2001-04-10 2005-02-15 Formfactor, Inc. Probe card with coplanar daughter card
US6528350B2 (en) * 2001-05-21 2003-03-04 Xerox Corporation Method for fabricating a metal plated spring structure
US20030000010A1 (en) * 2001-06-29 2003-01-02 Hideo Shimizu Blow-off nozzle type bathtub with illumination
US20030010615A1 (en) * 2001-07-11 2003-01-16 Xerox Corporation Microspring with conductive coating deposited on tip after release
US6684499B2 (en) * 2002-01-07 2004-02-03 Xerox Corporation Method for fabricating a spring structure
US6847218B1 (en) * 2002-05-13 2005-01-25 Cypress Semiconductor Corporation Probe card with an adapter layer for testing integrated circuits
US20050012513A1 (en) * 2003-07-17 2005-01-20 Shih-Jye Cheng Probe card assembly
US6844214B1 (en) * 2003-08-21 2005-01-18 Xerox, Corporation Microelectromechanical system based sensors, sensor arrays, sensing systems, sensing methods and methods of fabrication

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090253891A1 (en) * 2004-10-19 2009-10-08 Nitto Denko Corporation Cleaning substrate of substrate processing equipment and heat resistant resin preferable thereof
US20110100806A1 (en) * 2008-06-17 2011-05-05 Shincron Co., Ltd. Bias sputtering device
US10808319B1 (en) * 2010-02-26 2020-10-20 Quantum Innovations, Inc. System and method for vapor deposition of substrates with circular substrate frame that rotates in a planetary motion and curved lens support arms
US8562744B2 (en) * 2010-04-07 2013-10-22 Hon Hai Precision Industry Co., Ltd. Coating device
US20110247553A1 (en) * 2010-04-07 2011-10-13 Hon Hai Precision Industry Co., Ltd. Coating device
US9230846B2 (en) * 2010-06-07 2016-01-05 Veeco Instruments, Inc. Multi-wafer rotating disc reactor with inertial planetary drive
US20120055399A1 (en) * 2010-09-07 2012-03-08 Magna International Inc. Paint cart with rotating part support
CN102443766A (en) * 2010-10-15 2012-05-09 鸿富锦精密工业(深圳)有限公司 Film coating material frame and film coating equipment with same
US20120097106A1 (en) * 2010-10-26 2012-04-26 Hon Hai Precision Industry Co., Ltd. Physical vapor deposition device for coating workpiece
US20120211353A1 (en) * 2011-02-22 2012-08-23 Hon Hai Precision Industry Co., Ltd. Method of coating metal shell with pure white film
US20210180187A1 (en) * 2019-12-11 2021-06-17 Tokyo Electron Limited Rotational drive device, substrate processing apparatus, and rotational driving method
US11885003B2 (en) * 2019-12-11 2024-01-30 Tokyo Electron Limited Rotational drive device, substrate processing apparatus, and rotational driving method
US20210214845A1 (en) * 2020-01-15 2021-07-15 Tokyo Electron Limited Substrate processing apparatus and rotary drive method

Also Published As

Publication number Publication date
CN1575350A (en) 2005-02-02
US20050003196A1 (en) 2005-01-06
EP1419285A1 (en) 2004-05-19
US7153399B2 (en) 2006-12-26
KR20040044459A (en) 2004-05-28
JP2005501179A (en) 2005-01-13
WO2003018865A1 (en) 2003-03-06
EP1419285A4 (en) 2009-08-19
JP3794586B2 (en) 2006-07-05

Similar Documents

Publication Publication Date Title
US7153399B2 (en) Method and apparatus for producing uniform isotropic stresses in a sputtered film
JP3408539B2 (en) Characteristic control of deposited film on semiconductor wafer
US8574409B2 (en) Method of magnetron sputtering and a method for determining a power modulation compensation function for a power supply applied to a magnetron sputtering source
JP2000144399A (en) Sputtering device
US20130186746A1 (en) Method and Apparatus for Producing Controlled Stresses and Stress Gradients in Sputtered Films
CN1295628A (en) Method and apparatus for deposition of biaxially textured coatings
JPH0521347A (en) Sputtering device
JP2006052461A (en) Magnetron sputtering device, cylindrical cathode, and method of coating thin multicomponent film on substrate
JP2004269988A (en) Sputtering apparatus
US20090260975A1 (en) Apparatus
US6723215B2 (en) Sputtering apparatus for forming a metal film using a magnetic field
JP2000129436A (en) Inline type sputtering device and sputtering method
US20110192716A1 (en) Method for producing an ito layer and sputtering system
JP3077393B2 (en) X-ray exposure mask
JP3336421B2 (en) Sputtering equipment
Koike et al. Nanofabrication of multilayer zone plates by helicon plasma sputtering
JP2637171B2 (en) Multi-source sputtering equipment
JP3573218B2 (en) Thin film manufacturing method
JPH01270321A (en) Sputtering device
JP2746292B2 (en) Sputtering equipment
JP3100403B2 (en) High frequency excitation ion plating equipment
WO2020001762A1 (en) Deposition apparatus, deposition system, and method of depositing a seed layer
JP2005171369A (en) Substrate holding mechanism
JP2023505569A (en) Sputter-coated substrate method or sputter-coated substrate manufacturing method and apparatus
JPS60131967A (en) Sputtering method

Legal Events

Date Code Title Description
AS Assignment

Owner name: NANONEXUS, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SMITH, DONALD LEONARD;REEL/FRAME:019360/0448

Effective date: 20070524

AS Assignment

Owner name: GLENN PATENT GROUP, CALIFORNIA

Free format text: LIEN;ASSIGNOR:NANONEXUS, INC.;REEL/FRAME:021489/0108

Effective date: 20080905

Owner name: GLENN PATENT GROUP,CALIFORNIA

Free format text: LIEN;ASSIGNOR:NANONEXUS, INC.;REEL/FRAME:021489/0108

Effective date: 20080905

AS Assignment

Owner name: NANONEXUS, INC., CALIFORNIA

Free format text: LIEN RELEASE;ASSIGNOR:GLENN PATENT GROUP;REEL/FRAME:022024/0219

Effective date: 20081223

Owner name: NANONEXUS, INC.,CALIFORNIA

Free format text: LIEN RELEASE;ASSIGNOR:GLENN PATENT GROUP;REEL/FRAME:022024/0219

Effective date: 20081223

AS Assignment

Owner name: NANONEXUS (ASSIGNMENT FOR THE BENEFIT OF CREDITORS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NANONEXUS, INC.;REEL/FRAME:024640/0291

Effective date: 20100525

Owner name: VERIGY (SINGAPORE) PTE. LTD., SINGAPORE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NANONEXUS (ASSIGNMENT FOR THE BENEFIT OF CREDITORS), LLC;REEL/FRAME:024640/0301

Effective date: 20100601

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION