Connect public, paid and private patent data with Google Patents Public Datasets

Nitride and oxy-nitride cerium based phosphor materials for solid-state lighting applications

Download PDF

Info

Publication number
US20070075629A1
US20070075629A1 US11541755 US54175506A US2007075629A1 US 20070075629 A1 US20070075629 A1 US 20070075629A1 US 11541755 US11541755 US 11541755 US 54175506 A US54175506 A US 54175506A US 2007075629 A1 US2007075629 A1 US 2007075629A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
ce
light
compound
blue
nm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11541755
Inventor
Ronan Le Toquin
Anthony Cheetham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/7721Aluminates; Silicates
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883Arsenides; Nitrides; Phosphides
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BINDEXING SCHEME RELATING TO CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. INCLUDING HOUSING AND APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies
    • Y02B20/16Gas discharge lamps, e.g. fluorescent lamps, high intensity discharge lamps [HID] or molecular radiators
    • Y02B20/18Low pressure and fluorescent lamps
    • Y02B20/181Fluorescent powders

Abstract

Three new cerium (Ce) based phosphor materials based on nitride and oxy-nitride compounds emit yellow or blue to green photons upon excitation by ultraviolet (UV) or blue light radiation. The two yellow emitting compounds belong to the quartenary Ca—Al—Si—N system with distinct structures. These bright yellow phosphors can be used for white light applications by combining either a blue light emitting diode (LED) and a yellow phosphor, a blue LED and green-orange phosphors, or an ultraviolet (UV) LED with three phosphors, i.e., red, blue and green (RGB) phosphors. The bright blue-green phosphor, which may be described by Sr2SiO4-δNδ, can be used in the UV LED plus 3 RGB phosphors setup.

Description

    CROSS-REFERENCE TO RELATED APPLICATION
  • [0001]
    This application claims the benefit under 35 U.S.C. Section 119(e) of the following co-pending and commonly-assigned U.S. patent applications:
  • [0002]
    U.S. Provisional Application Ser. No. 60/722,682, filed on Sep. 30, 2005, by Ronan P. Le Toquin and Anthony K. Cheetham, entitled “NITRIDE AND OXY-NITRIDE CERIUM BASED PHOSPHOR MATERIALS FOR SOLID-STATE LIGHTING APPLICATIONS,” attorneys' docket number 30794.145-US-P1 (2005-618-1); and
  • [0003]
    U.S. Provisional Patent Application Ser. No. 60/722,900, filed on Sep. 30, 2005, by Anthony K. Cheetham and Ronan P. Le Toquin, entitled “CERIUM BASED PHOSPHOR MATERIALS FOR SOLID-STATE LIGHTING APPLICATIONS,” attorneys' docket number 30794.138-US-P1 (2005-618-1).
  • [0004]
    which applications are incorporated by reference herein.
  • [0005]
    This application is related to the following co-pending and commonly-assigned applications:
  • [0006]
    U.S. Utility application Ser. No. ______, filed on same date herewith, by Anthony K. Cheetham and Ronan P. Le Toquin, entitled “CERIUM BASED PHOSPHOR MATERIALS FOR SOLID-STATE LIGHTING APPLICATIONS,” attorneys' docket number 30794.138-US-U1 (2005-618-2), which application claims priority to U.S. Provisional Patent Application Ser. No. 60/722,900, filed on Sep. 30, 2005, by Anthony K. Cheetham and Ronan P. Le Toquin, entitled “CERIUM BASED PHOSPHOR MATERIALS FOR SOLID-STATE LIGHTING APPLICATIONS,” attorneys' docket number 30794.138-US-P1 (2005-618-1).
  • [0007]
    which applications are incorporated by reference herein.
  • BACKGROUND OF THE INVENTION
  • [0008]
    1. Field of the Invention
  • [0009]
    The present invention relates to cerium (Ce) based phosphor materials for solid-state lighting applications.
  • [0010]
    2. Description of the Related Art
  • [0011]
    (Note: This application references a number of different publications as indicated throughout the specification by one or more reference numbers within brackets, e.g., [x]. A list of these different publications ordered according to these reference numbers can be found below in the section entitled “References.” Each of these publications is incorporated by reference herein.)
  • [0012]
    Light emitting diodes (LED) based on wide band gap semiconductor materials such as GaN/InGaN produce ultraviolet (UV) and/or blue light (300 nm-460 nm) with high efficiency and long lifetimes [1,14]. The emission from such LEDs can be converted into lower energy radiation using the luminescence properties of phosphor materials. Therefore, high intensity blue light (10) can be used to make white LED devices by combining either a blue LED (11) and a yellow phosphor (12), as shown in FIG. 1(a), so that blue and yellow light (13) is emitted which appears as white light (14). Alternatively, a blue LED (11) emitting blue light (10), combined with green and orange phosphors (15), as shown in FIG. 1(b), emit blue, green and orange light (16) which appears as white light (14). Alternatively, a high intensity UV light (20) can be used to make white LED devices by combining a UV LED (21) with three phosphors, i.e., red, green and blue (RGB) phosphors (22), as shown in FIG. 2. The combination will emit red, green and blue light (23) which appears as white light (24). The LEDs (11),(21) may be formed on substrates (17), (25) respectively.
  • [0013]
    The first commercially available white LED was based on an InGaN chip emitting blue photons at around 460 nm combined with a Y3Al5O12:Ce3+ (YAG) phosphor layer that converts blue into yellow photons [2,3]. Up to now, no competing yellow phosphor has been found to replace the YAG in the blue LED and yellow phosphor setup. However, new phosphors are necessary in order to improve efficiency as well as color rendering. The yellow phosphor should have a strong blue excitation band around 460 nm and emit yellow light around 560 nm. The second option to obtain white light requires very efficient blue, green and red phosphors that can be excited around 380 nm. The development of white solid state lighting based on UV LED requires so far new very efficient phosphor materials.
  • [0014]
    In most cases, Ce doped materials are characterized by UV emission [5]. However, high crystal field symmetries (Ce—YAG [2]) or a strongly covalent Ce environment (sulfides or oxy-nitrides [6]) can decrease the energy of the emission wavelength. Yttrium aluminium garnet (YAG) doped with Ce3+is the most important example, exhibiting a strong yellow emission (540 nm) upon blue excitation (460 nm). The cubic crystal field at the Ce site associated with a small tetragonal distortion is responsible for this unusual yellow emission [2]. As demonstrated previously by Van Krevel et al. [6], it is also possible to observe green-yellow Ce3+ emission in oxy-nitride compounds, replacing oxygen by more covalent anion such as nitrogen. Further increases of the covalent character has lead to new Eu2+ doped Sialon [7,8] or silicon (oxy)nitride [9-12] based materials that have been reported to show very efficient orange luminescence. Eu2+ doped M2Si5N8 (M=calcium, strontium, or barium) is one of the most interesting so far [10]. The longer emission wavelength observed for oxy-nitride and nitride compounds is associated with a broader excitation band that covers part of the UV and visible spectral range.
  • SUMMARY OF THE INVENTION
  • [0015]
    The present invention discloses three new Ce based phosphor materials based on nitride and oxy-nitride compounds have been found that emit, respectively, yellow and blue-green photons upon UV/blue excitation. The yellow emitting compounds belong to the Ca—Al—Si—N system with distinct structures. These bright yellow phosphors can be used for white light applications by combining either a blue LED and a yellow phosphor, a blue LED and green-orange phosphors, or an UV LED with three RGB phosphors. In this regard, the present invention encompasses a number of different embodiments, which are set forth below.
  • [0016]
    In one embodiment, the present invention is an apparatus for solid state lighting applications, comprising an LED and a luminescent Ce compound comprising a Ce3+ doped compound from the quartenary Ca—Al—Si—N system, wherein the luminescent Ce compound emits yellow light when excited by radiation from the LED. The luminescent Ce compound may have an excitation spectrum comprising wavelengths smaller than 430 nm. In this embodiment, the radiation may be UV or blue light radiation, e.g., the LED may be a blue LED and the luminescent Ce compound may emit the yellow light for use in white light applications with the blue LED.
  • [0017]
    In another embodiment, the present invention is a composition of matter, comprising a luminescent Ce compound that emits yellow light when excited by radiation, wherein the luminescent Ce compound is a Ce3+ doped compound from the quartenary Ca—Al—Si—N system. In this embodiment, the radiation may be UV or blue light radiation, e.g., the luminescent Ce compound may emit the yellow light for use in white light applications with a blue light emitting diode.
  • [0018]
    The luminescent Ce compound may be based on a nitride or oxy-nitride compound and be described by the formula: MxSiyAlzNw-δOδ:Ce3+, wherein x≈z≈y≈z≈1, w=3, M is calcium (Ca), strontium (Sr), magnesium (Mg), or lanthanide (Ln) elements, and 0≦δ<3 and wherein alkaline earths may be substituted for M. Ce ions may be substituted for Ca with a concentration ranging from 0.01 to 20%. Yttrium (Y) or lanthanide (Ln) elements may be substituted for M with simultaneous replacement of silicon (Si) by aluminium (Al) or gallium (Ga) for charge compensation. Silicon (Si) may be partially substituted by germanium (Ge).
  • [0019]
    The luminescent Ce compound may have an orthorhombic unit cell having parameters a=5.6477(13) Å, b=9.5201(26) Å and c=4.9967(13) Å, wherein the values in parentheses represent uncertainty in the measurements. The luminescent Ce compound may have a broad excitation band from 375 to 475 nm with a maximum at around 420 nm, and upon excitation at 420 nm, have an emission band centered at around 540 nm with a full width at half maximum of about 100 nm from 500 to 600 nm.
  • [0020]
    The luminescent Ce compound may have an orthorhombic cell with parameters a=9.92 Å, b=9.11 Å and c=7.33 Å. The composition of matter of claim 5, wherein the luminescent Ce compound has an emission maximum in the range 520-620 nm. The luminescent Ce compound may have an excitation maximum in the range 420-500 nm.
  • [0021]
    In another embodiment, the present invention is a method for creating a luminescent Ce compound, comprising the steps of (a) mixing stoichiometric amounts of (1) Ca3N2 or Ca metal, (2) AlN, (3) Si3N4 or Si2N2NH, or Si(NH)2, and (4) Ce to create a mixture, wherein the Ce is in the form of a metal, nitride, or oxide, (b) weighing and grinding the mixture in conditions of [O2]<1 parts per million (ppm) and [H2O ]<1 ppm in order to prevent oxidation or hydrolysis, and (c) heating the mixture to a temperature between 1450° C. and 1600° C. under flowing hydrogen and nitrogen (H2/N2) with a ratio of 5:95 at 0.2 to 0.5 liters per minute. The method may further comprise mixing the stoichiometric amounts of (1) Ca3N2 or Ca metal, (2) AlN, (3) Si3N4, Si2N2NH or Si(NH)2, with a Ca:Al: Si ratio of 1:1:1, and adding less than 2% strontium.
  • [0022]
    In another embodiment, the present invention is an apparatus for solid state lighting applications, comprising an LED and a luminescent Ce compound that emits blue-green light when excited by radiation from the LED. In this embodiment, the radiation may be UV or blue light radiation, e.g., the LED may be a UV LED and the luminescent Ce compound may emit the blue-green light for use in white light applications with the UV LED in combination with RGB phosphors.
  • [0023]
    In another embodiment, the present invention is a composition of matter, comprising a luminescent Ce compound that emits blue-green light when excited by radiation. In this embodiment, the radiation may be UV or blue light radiation, e.g., the luminescent Ce compound may be used for white light applications in combination with one or more UV LEDs with RGB phosphors.
  • [0024]
    The luminescent Ce compound may be based on nitride or oxy-nitride compounds and be described by the formula M2SiO4-δNδ wherein M is strontium (Sr) and 0≦δ<4. Alkaline earths may be substituted for M and Si may be partially substituted by Ge.
  • [0025]
    The blue to green luminescent Ce compound may have an orthorhombic structure with a space group Pnmb with refined cell parameters of about a=5.6671(3) Å, b=7.0737(4) Å and c=9.7359(5) Å. The blue to green luminescent Ce compound may have an excitation peak with a width of about 80 nm, which leads to efficient excitation from 330 up to 400 nm, and may have an emission peak with a width of about 80 nm. The luminescent Ce compound may have an emission peak that is varied from 450 to 500 nm depending on synthesis conditions, a percentage of cerium or substitution of Sr by larger cations such as Ba.
  • [0026]
    The blue to green luminescent Ce compound may be prepared by (a) preparing a reactive mix of cerium doped SrO and SiO2 nanopowders by dissolution of stoichiometric amounts of Sr(NO3)2 and Ce(NO3)3 in water with Si(OC2H5)4, wherein a coprecipitation of Sr and Ce oxalate at 60° C. is performed in a slightly basic environment in order to gel Si(OC2H5)4 and a resulting dried powder is calcined at 750° C. for 2 hours, and (b) mixing the SrO thoroughly with Si3N4 to create a powder mixture and firing the powder mixture twice in a tube furnace at a temperature of 1350° C. under flowing N2 at 1 to 4 liters per minute.
  • [0027]
    These embodiments are described in more detail below.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0028]
    Referring now to the drawings in which like reference numbers represent corresponding parts throughout:
  • [0029]
    FIGS. 1(a) and 1(b) are schematic representations of a white LED setup based on a blue LED (˜460 nm) with a yellow phosphor, as shown in FIG.(a), or with a mix of green and orange phosphors, as shown in FIG.(b).
  • [0030]
    FIG. 2 is a schematic representation of the white LED setup based on a UV LED (˜380 nm) with red, green and blue (RGB) phosphor materials.
  • [0031]
    FIG. 3 is a flowchart illustrating the preparation of a yellow phosphor comprising a luminescent Ce compound based on nitride compounds.
  • [0032]
    FIG. 4 is a graph of the emission/excitation spectra of the compound CaAlSiN3 doped with Ce3+, wherein the emission wavelength maximum is 540 nm and the excitation wavelength has been fixed at ˜420 nm.
  • [0033]
    FIG. 5 is a flowchart illustrating the preparation of a second phase of a yellow phosphor comprising a luminescent compound.
  • [0034]
    FIG. 6 is a graph of an X-ray diffraction pattern of the Ce3+ doped CaxSiyAlzN3-δOδ yellow phosphor.
  • [0035]
    FIG. 7 is a graph of the emission/excitation spectra of the new Ce3+ doped CaxSiyAlzN3-δOδ yellow phosphor, wherein the excitation wavelength is ˜460 nm and the emission wavelength has been fixed at ˜565 nm.
  • [0036]
    FIG. 8 shows how the composition of matter comprising the blue-green phosphor has been synthesized via a two step method.
  • [0037]
    FIG. 9 is a graph of an X-ray diffraction pattern of the Ce3+ doped Sr2SiO4-δNδ blue-green phosphor.
  • [0038]
    FIG. 10 is a graph of the emission spectrum of the compound Sr2SiO4 doped with Ce3+, wherein the excitation wavelength is 380 nm and the emission wavelength has been fixed at 460 nm.
  • [0039]
    FIG. 11 is a schematic representation of an apparatus for solid state lighting applications, comprising an LED and a composition of matter comprising a luminescent Ce compound.
  • DETAILED DESCRIPTION OF THE INVENTION
  • [0040]
    In the following description of the preferred embodiment, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration a specific embodiment in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.
  • [0041]
    Technical Disclosure
  • [0042]
    The subject of the present invention is the discovery of three new phosphor materials for application in white solid-state lighting based upon blue (InGaN) or UV (GaN, ZnO) LEDs. Hence, the invention covers the synthesis of yellow and blue to green emitting materials and their application as a phosphor alone or in combination with other phosphors for white LED realization. Two compositions of matter comprising Ce3+ doped compounds from the quaternary Ca—Al—Si—N system are reported to emit yellow photons under UV or blue excitation, and cerium doped Sr2SiO4-δNδ is reported to emit blue to green light.
  • [0043]
    The composition of matter comprising the yellow phosphor belongs to the quaternary system comprising calcium-aluminium-silicon-nitrogen (Ca—Al—Si—N) and can be described by the formula MxSiyAlNw-δOδCe3+ with x≈y≈z≈1, w=3 and 0≦δ<3. If δ is 0, the compound is an example of a nitride compound; if 6 is non zero, the compound is an example of an oxy-nitride. M is calcium (Ca), but chemical substitution on the M site is possible with different alkaline earths. Ce ions are substituted on the Ca site with a concentration ranging from 0.01 to 20%. Yttrium (Y) or lanthanide (Ln) elements may also be substituted on the M site with simultaneous replacement of silicon (Si) by aluminium (Al) or gallium (Ga) atoms for charge compensation. Silicon (Si) atoms may also be partially substituted using germanium (Ge).
  • [0044]
    FIG. 3 shows how the composition of matter comprising the first yellow phosphor (nitride based CaAlSiN3:Ce3+ phase) may be prepared.
  • [0045]
    Block 30 represents the step of mixing stoichiometric amounts of (1) Ca3N2 or Ca metal, (2) AlN, (3) Si3N4, Si2N2NH or Si(NH)2, with (4) the Ce source in the form of either a metal, nitride (if available), or oxide, to create a mixture.
  • [0046]
    Block 31 represents the step of weighing and grinding of the mixture, carried out in a glove box in conditions of [O2]<1 ppm and [H2O]<1 ppm in order to prevent degradation such as oxidation or hydrolysis.
  • [0047]
    Block 32 represents the step of loading the mixture into, for example, a boron nitride (BN) crucible, for heating in a tube furnace temperature between 1450 ° C. and 1600° C. under flowing hydrogen (H2) and nitrogen (N2) with a ratio of 5:95 (0.2 to 0.5 liters per minute). The body color of this material is bright yellow.
  • [0048]
    X-ray powder diffraction (see Table 1) shows that this first phase comprising CaAlSiN3:Ce3+ prepared using FIG. 3 is similar to the previously reported CaAlSiN3 [12]. Using Table 1, and based on an orthorhombic unit cell, the refined values of the parameters are a=5.6477(13) Å, b=9.5201(26) Å, c=4.9967(13) Å for the first phase of a yellow phosphor comprising CaAlSiN3.
  • [0049]
    The compound CaAlSiN3 has already been shown to be a very efficient orange/red phosphor if Ca2+ ions are substituted by Eu2+[13]. Due to the presence of additional phases, the structure of CaAlSiN3 has not yet been determined and the symmetry is thought to be orthorhombic with cell parameters of about a=5.63 Å, b=9.58 Å and c=4.986 Å [12].
  • [0050]
    The luminescent properties of the first yellow phosphor are particularly interesting for white light applications. FIG. 4 shows an example of how a composition of matter comprising a luminescent Ce doped compound from the Ca—Al—Si—N system emits yellow light when excited by radiation, for example UV or blue radiation. According to FIG. 4, the Ce doped CaAlSiN3 has a broad excitation band from 375 nm to 475 nm with a maximum at around 420 nm. According to FIG. 4, upon excitation at 420 nm, the emission band is centered at around 540 nm with a full width at half maximum of about 100 nm from 500 nm to 600 nm.
  • [0051]
    Hence, FIG. 4 shows how the luminescent Ce compound can be a promising alternative to YAG:Ce3+ for the application as the yellow phosphor. First, the broad excitation band can be efficiently excited with a blue InGaN LED around 460 nm. Second, the Ce compound can be excited as well by a near UV GaN, ZnO LED for a three phosphor RGB setup. Third, this material shows a broader excitation band of about 100 nm whereas cerium YAG shows only a 60 nm wide band ranging from 430 nm to 490 nm.
  • [0052]
    FIG. 5 shows how the second yellow phosphor comprising a second phase of the Ca—Al—Si—N system (CaxSiyAlzN3-δOδ:Ce3+) can be prepared.
  • [0053]
    Block 50 represents the step of mixing stoichiometric amounts of (1) Ca3N2 or Ca metal, (2) AlN, and (3) Si3N4, Si2N2NH or Si(NH)2, with a Ca:Al:Si ratio of 1:1:1, together with (4) a Ce source in the form of either a metal, nitride (if available) or oxide, to create a mixture. A small amount of Sr (less than 2%) is added.
  • [0054]
    Block 51 represents the step of weighing and grinding of the mixture, carried out in a glove box in conditions of [O2]<1 ppm and [H2O]<1 ppm in order to prevent degradation such as oxidation or hydrolysis.
  • [0055]
    Block 52 represents the step of loading the mixture into, for example, a BN crucible for heating in a tube furnace temperature between 1450° C. and 1600° C. under flowing H2/N2 with a ratio of 5:95 at 0.2 to 0.5 liters per minute. The body color of this material is bright yellow.
  • [0056]
    Even though the stoichiometry is close to that of the composition of matter comprising the first yellow phosphor (CaAlSiN3:Ce3+), the structure is rather different (see Tables 1 and 2 below). Strontium impurities and/or variations of heating conditions may explain the changes of structure.
  • [0057]
    FIG. 6 and Table 2 show this newly discovered CaxSiyAlzN3-δOδ:Ce3+ phase, created using the method of FIG. 5, has a different X-ray powder pattern. According to FIG. 6 and Table 2, the structure may be described with an orthorhombic cell with parameters a=9.92 Å, b=9.11 Å and c=7.33 Å.
  • [0058]
    FIG. 7 illustrates a further example of how a luminescent Ce doped compound from the Ca—Al—Si—N system, the new CaxSiyAlzN3-δOδ:Ce3+ phase, emits yellow light when excited by radiation such as blue or UV light.
  • [0059]
    FIGS. 4 and 7 show how the structural changes between CaAlSiN3:Ce3+ and the CaxSiyAlzN3-δOδ:Ce3+ phase translate into a red shift of both emission and excitation bands. The emission maximum is around 565 nm for the CaxSiyAlzN3-δOδ:Ce3+ phase, as illustrated in FIG. 7. Both compounds (CaAlSiN3:Ce3+ and the new CaxSiyAlzN3-δOδ:Ce3+ phase) phase) present a comparable emission peak shape and full width at half maximum, as illustrated in FIGS. 4 and 7. For the CaxSiyAlzN3-δOδ:Ce3+ phase, the excitation maximum is at around 460 nm, but the excitation band covers the range 350 nm to 500nm, as illustrated in FIG. 7. The CaxSiyAlzN3-δOδ:Ce3+ phase is thus very suitable for the yellow phosphor and blue LED setup. FIG. 7 also shows the Ce doped compound can also been used with a UV excitation source such as GaN or ZnO LED.
  • [0060]
    The tail of the emission peak, shown in FIG. 7, that extends well over 630 nm can also be very advantageous for color rendering purposes.
  • [0061]
    The composition of the blue-green light emitting phosphor may be M2SiO4-δNδ, where M is mainly strontium (Sr), but chemical substitution on the M site is possible with different alkaline earths, magnesium (Mg), Ca, barium (Ba) or even zinc (Zn), and with 0≦δ<4. Silicon atoms may also be partially substituted using Ge. If δ is 0, the compound is an example of a nitride compound; if 6 is non zero, the compound is an example of an oxy-nitride.
  • [0062]
    FIG. 8 shows how the composition of matter comprising the blue and green phosphor has been synthesized via a two step method.
  • [0063]
    Block 80 represents the step of preparing a reactive mix of cerium doped SrO and SiO2 nanopowders by dissolution of stoichiometric amounts of Sr(NO3)2 and Ce(NO3)3 in water with Si(OC2H5)4, wherein a co-precipitation of Sr and Ce oxalate at 60° C. is performed in a slightly basic environment in order to gel Si(OC2H5)4, and a resulting dried powder is calcined at 750° C. for 2 hours.
  • [0064]
    Block 81 represents the step of mixing the (Sr,Ce)—Si—O thoroughly with Si3N4 to create a mixture, and placing the mixture into, for example, an Al2O3 boat, wherein a resulting powder is fired twice in a tube furnace at 1350° C. under flowing nitrogen (N2) at 1 to 4 liters per minute. The body color of this material is light green.
  • [0065]
    All samples have been characterized using X-ray diffraction and UV/visible emission excitation spectroscopy. FIG. 9 shows the phase Sr2SiO4-δNδ has an orthorhombic structure with a space group Pnmb with refined cell parameters of about a=5.6671(3) Å, b=7.0737(4) Å, c=9.7359(5) Å.
  • [0066]
    FIG. 10 shows an example of how a composition of matter comprising a luminescent Ce doped compound emits blue to green light when excited by radiation (such as blue or UV) from the LED. According to FIG. 10, the Sr2SiO4:Ce3+ phosphor may be used as a blue to green phosphor for solid-state lighting based upon RGB and UV LEDs. The very bright Sr2SiO4:Ce3+ compound can be excited in the UV (˜380 nm) using GaN or ZnO based LEDs, as illustrated in FIG. 10. FIG. 10 also shows the excitation peak has a width of about 80 nm which leads to efficient excitation in an excitation spectrum covering 330 nm up to 400 nm. The emission peak may be varied from 450 nm to 500 nm depending on the synthesis conditions, the percentage of cerium or the substitution of Sr by larger cations such as Ba. The emission peak at ˜460 nm has a width of about 80 nm, as shown in FIG. 10.
  • [0067]
    The optical properties of Sr2SiO4 as a host material have already been reported for Eu2+ emission [2].
  • [0068]
    FIG. 11 is a schematic representation, analogous to FIGS. 1 and 2, of an apparatus for solid state lighting applications (for example a white light application), comprising at least one LED (1100) and a composition of matter comprising a luminescent Ce doped compound (1101) typically positioned adjacent the LED, that emits yellow or blue to green light (1103) when excited by radiation (1104) from the LED. Other colored light (1105) may be present if one or more other phosphors (1106) are incorporated, such as the phosphors of FIGS. 1 and 2. For example, the other phosphors (1106) may comprise green and orange phosphors, or red, green and blue phosphors. The radiation (1104) may comprise blue light or UV light. Some examples are outlined below:
  • [0069]
    When the LED (1100) is a blue LED, the luminescent Ce compound emits the yellow light (1103) for use in white light applications with the blue LED (and optionally other phosphors (1106)), because the blue light (1104) in combination with the yellow light (1103) and light (1105) from other phosphors (1106) if present, appears as white light (1107).
  • [0070]
    When the LED (1100) is a blue LED, the luminescent Ce compound emits yellow light (1103) for use in white light applications with the blue LED and other phosphors (1106), because the blue light (1104) in combination with the green/orange light (1105) from other phosphors (1106) appears as white light (1107).
  • [0071]
    When the LED (1100) is an UV LED, the luminescent Ce compound (1101) emits the yellow light (1103) for use in white light applications with the UV LED and RGB phosphors (1106), because the red, green and blue light (1103) from the RGB (1106) and the yellow light from the Ce compound appears as white light (1107).
  • [0072]
    When the LED (1100) is an UV LED, the luminescent Ce compound (1101) emits the blue to green light (1103) for use in white light applications with the UV LED and RGB phosphors (1106), because the red, green and blue light (1105) from the RGB (1106) and the blue-green light (1103) from the luminescent Ce compound appears as white light (1107).
  • [0073]
    The luminescent Ce compound (1101) may be based on nitride or oxy-nitride compounds. The LED may be formed on a substrate (1108).
  • REFERENCES
  • [0074]
    The following references are incorporated by reference herein:
    • [1] S. Nakamura, G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers, Springer, Berlin (1997).
    • [2] G. Blasse and A. Brill, Appl. Phys. Lett., 11 (1967): J. Chem. Phys., 47 (1967) 5139. Phosphor Handbook, S. Shionoya, W. M. Yen.(1998).
    • [3] U.S. Pat. No. 5,998,925, issued Dec. 7, 1999, to Shimizu. et al., and entitled “Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material.”
    • [4] T. Ju{tilde over (s)}tel, H. Nikol, C. Ronda, Angew. Chem. Int. Ed., 1998, 37, 3084-3103.
    • [5] G. Blasse, B. C. Grabmeier, Luminescent Materials, Springer, Berlin (1994).
    • [6] J. W. H. van Krevel, H. T. Hintzen, R. Metselaar, A. Meijerink, J. Alloys Compd. 268 (1-2), 272-277 (1998).
    • [7] U.S. Pat. No. 6,717,353, issued Apr. 6, 2004, to Mueller et al., and entitled “Phosphor converted light emitting device.”
    • [8] J. W. H. van Krevel, J. W. T. van Rutten, H. Mandal, H. T. Hinzen, R. Metselaar, J. Solid State Chem. 165 (1) 19-24 (2002).
    • [9] U.S. Pat. No. 6,670,748, issued Dec. 30, 2003, to Ellens et al., and entitled “Illumination unit having at least one LED as light source.”
    • [10] U.S. Pat. No. 6,682,663, issued Jan. 27, 2004, to Botty et al., and entitled ”Pigment with day-light fluorescence.”
    • [11] U.S. Patent Publication No. 20030006702, published Jan. 9, 2003, by Regina B. Mueller-Mach et al., and entitled “Red-deficiency compensating phosphor light emitting device.”
    • [12] Z. K. Huang, W. Y. Sun, D. S. Yan, Journal of Materials Science Letters 4 (1985) 255-259.
    • [13] K. Uheda, N. Hirosaki, H. Yamamoto, H. Yamane, Y. Yamamoto, W. Inami, K. Tsuda, Proceeding of the 2004 Joint Research Meeting, ECS October 2004, Y1-Thirteen International Symposium on the Physics ad Chemistry of Luminescent Materials.
    • [14] S. P. DenBaars, Solid State Luminescence Theory, Materials and Devices, edited by A. H. Kitai, Chapman and Hall, London (1993).
  • [0089]
    Conclusion
  • [0090]
    This concludes the description of the preferred embodiment of the present invention. The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching without fundamentally deviating from the essence of the present invention. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto.
    TABLE 1
    d-spacing for the Ce3+ doped CaAlSiN3 compound
    obtained from X-ray powder diffraction.
    d-spacing Intensity
    17.736 4.996687 14
    18.25 4.857327 34
    18.626 4.760084 119
    25.555 3.482875 205
    25.83 3.446498 150
    31.66 2.823873 337
    32.333 2.766574 997
    35.917 2.498344 846
    36.52 2.458431 1000
    36.984 2.428664 285
    37.116 2.420344 618
    37.768 2.380042 162
    40.573 2.221693 0
    40.756 2.212162 17
    41.299 2.18431 221
    42.015 2.148735 0
    48.62 1.871151 126
    49.094 1.854193 239
    49.303 1.846819 52
    50.083 1.819872 26
    50.546 1.804258 28
    52.506 1.741438 13
    52.805 1.732282 30
    53.103 1.723249 34
    53.548 1.709985 16
    53.99 1.697013 24
    55.095 1.665563 14
    56.817 1.619109 378
    58.087 1.586695 112
    58.539 1.575513 40
    58.679 1.572103 0
    60.014 1.540264 33
    61.243 1.512279 0
    62.488 1.485106 1
    63.157 1.470985 16
    63.556 1.462703 2
    64.951 1.434614 269
    65.344 1.426928 186
    66.126 1.411936 43
  • [0091]
    TABLE 2
    d-spacing for the new Ce3+ doped CaxSiyAlzNw-δOδ
    phase obtained from X-ray powder diffraction
    d-spacing Intensity
    13,143 6,73086083 36
    13,4943 6,55641426 5
    18,2506 4,85705447 18
    22,047 4,02852137 23
    23,6037 3,76623879 31
    25,4389 3,49854329 31
    25,7445 3,45770252 50
    28,9833 3,07825831 24
    30,7726 2,90322548 24
    31,7727 2,81408597 549
    31,8884 2,80413918 221
    32,4779 2,7545751 12
    33,3463 2,68479878 155
    33,5926 2,66567486 224
    35,6149 2,51880928 597
    36,1652 2,48173449 73
    36,5413 2,45704973 1000
    36,7261 2,4451093 184
    36,9422 2,43130083 116
    38,038 2,36374133 98
    40,2696 2,23774793 42
    41,0968 2,19459627 113
    41,5258 2,17290997 17
    41,3686 2,18080308 26
    46,1567 1,96510355 26
    48,1231 1,88929703 42
    48,4116 1,87871008 266
    48,5471 1,87378263 43
    49,4325 1,84227326 64
    49,924 1,82528156 37
    52,1626 1,75209125 70
    56,5341 1,62654061 295
    56,7871 1,61989319 51
    59,468 1,55310549 66
    59,8727 1,543571 26
    60,0577 1,53925775 19
    62,3297 1,4884962 24
    64,4856 1,44383901 336
    64,7032 1,43950805 11

Claims (36)

1. An apparatus for solid state lighting applications, comprising:
a light emitting diode (LED); and
a luminescent cerium (Ce) compound comprising a Ce3+ doped compound from the quartenary Ca—Al—Si—N system;
wherein the luminescent Ce compound emits yellow light when excited by radiation from the LED.
2. The apparatus of claim 1, wherein the luminescent Ce compound has an excitation spectrum comprising wavelengths smaller than 430 nm.
3. The apparatus of claim 1, wherein the radiation is ultraviolet (UV) or blue light radiation.
4. The apparatus of claim 1, wherein the LED is a blue LED and the luminescent Ce compound emits the yellow light for use in white light applications with the blue LED.
5. A composition of matter, comprising:
a luminescent cerium (Ce) compound that emits yellow light when excited by radiation, wherein the luminescent Ce compound is a Ce3+ doped compound from the quartenary Ca—Al—Si—N system.
6. The composition of matter of claim 5, wherein the radiation is ultraviolet (UV) or blue light radiation.
7. The composition of matter of claim 5, wherein the luminescent Ce compound emits the yellow light for use in white light applications with a blue light emitting diode (LED).
8. The composition of matter of claim 5, wherein the luminescent Ce compound is based on a nitride or oxy-nitride compound.
9. The composition of matter of claim 5, wherein the luminescent Ce compound is described by the formula:

MxSiyAlzNw-δOδ:Ce3+
wherein x≈y≈z≈1, w=3, M is calcium (Ca), strontium (Sr), magnesium (Mg), or lanthanide (Ln) elements, and 0≦δ<3.
10. The composition of matter of claim 9, wherein alkaline earths are substituted for M.
11. The composition of matter of claim 9, wherein cerium (Ce) ions are substituted for Ca with a concentration ranging from 0.01 to 20%.
12. The composition of matter of claim 9, wherein yttrium (Y) or lanthanide (Ln) elements are substituted for M with simultaneous replacement of silicon (Si) by aluminium (Al) or gallium (Ga) for charge compensation.
13. The composition of matter of claim 9, wherein silicon (Si) is partially substituted by germanium (Ge).
14. The composition of matter of claim 5, wherein the luminescent Ce compound has an orthorhombic unit cell having parameters a=5.6477(13) Å, b=9.5201(26) Å and c=4.9967(13) Å.
15. The composition of matter of claim 5, wherein the luminescent Ce compound has a broad excitation band from 375 to 475 nm with a maximum at around 420 nm.
16. The composition of matter of claim 15, wherein the luminescent Ce compound, upon excitation at 420 nm, has an emission band centered at around 540 nm with a full width at half maximum of about 100 nm from 500 to 600 nm.
17. The composition of matter of claim 5, wherein the luminescent Ce compound has an orthorhombic cell with parameters a=9.92 Å, b=9.11 Å and c=7.33 Å.
18. The composition of matter of claim 5, wherein the luminescent Ce compound has an emission maximum in the range 520-620 nm.
19. The composition of matter of claim 18, wherein the luminescent Ce compound has an excitation maximum in the range 420-500 nm.
20. A method for creating a luminescent cerium (Ce) compound, comprising the steps of:
(a) mixing stoichiometric amounts of (1) Ca3N2 or Ca metal, (2) AlN, (3) Si3N4, Si2N2NH, or Si(NH)2, and (4) Ce to create a mixture, wherein the Ce is in the form of a metal, nitride, or oxide;
(b) weighing and grinding the mixture in conditions of [O2]<1 parts per million (ppm) and [H2O]<1 ppm in order to prevent oxidation or hydrolysis; and
(c) heating the mixture to a temperature between 1450° C. and 1600° C. under flowing hydrogen and nitrogen (H2/N2) with a ratio of 5:95 at 0.2 to 0.5 liters per minute.
21. The method of claim 20, further comprising mixing the stoichiometric amounts of (1) Ca3N2 or Ca metal, (2) AlN, (3) Si3N4, Si2N2NH or Si(NH)2, with a Ca:Al:Si ratio of 1:1:1, and adding less than 2% strontium.
22. An apparatus for solid state lighting applications, comprising:
a light emitting diode (LED); and
a luminescent cerium (Ce) compound that emits blue-green light when excited by radiation from the light emitting diode.
23. The apparatus of claim 22, wherein the radiation is ultraviolet (UV) or blue light radiation.
24. The apparatus of claim 22, wherein the LED is an ultraviolet (UV) LED and the luminescent Ce compound emits the blue-green light for use in white light applications with the UV LED in combination with red, green and blue (RGB) phosphors.
25. A composition of matter, comprising:
a luminescent cerium (Ce) compound that emits blue-green light when excited by radiation.
26. The composition of matter of claim 25, wherein the radiation is ultraviolet (UV) or blue light radiation.
27. The composition of matter of claim 25, wherein the luminescent Ce compound is used for white light applications in combination with one or more ultraviolet (UV) light emitting diodes (LEDs) with red, green and blue (RGB) phosphors.
28. The composition of matter of claim 25, wherein the luminescent Ce compound is based on a nitride or oxy-nitride compound.
29. The composition of matter of claim 25, wherein the luminescent Ce compound is described by the formula:

M2SiONδ
wherein M is strontium (Sr) and 0≦δ<4.
30. The composition of matter of claim 29, wherein alkaline earths are substituted for M.
31. The composition of matter of claim 29, wherein silicon (Si) is partially substituted by germanium (Ge).
32. The composition of matter of claim 25, wherein the luminescent Ce compound has an orthorhombic structure with a space group Pnmb with refined cell parameters of about a=5.6671(3) Å, b=7.0737(4) Å and c=9.7359(5) ÅA.
33. The composition of matter of claim 25, wherein the luminescent Ce compound has an excitation peak with a width of about 80 nm, which leads to efficient excitation from 330 up to 400 nm.
34. The composition of matter of claim 25, wherein the luminescent Ce compound has an emission peak that is varied from 450 to 500 nm depending on synthesis conditions, a percentage of Ce or substitution of Sr by larger cations such as Ba.
35. The composition of matter of claim 25, wherein the luminescent Ce compound has an emission peak with a width of about 80 nm.
36. The composition of matter of claim 25, wherein the luminescent Ce compound is prepared by:
preparing a reactive mix of Ce doped SrO and SiO2 nanopowders by dissolution of stoichiometric amounts of Sr(NO3)2 and Ce(NO3)3 in water with Si(OC2H5)4, wherein a coprecipitation of Sr and Ce oxalate at 60° C. is performed in a slightly basic environment in order to gel Si(OC2H5)4 and a resulting dried powder is calcined at 750° C. for 2 hours; and
mixing the (Sr,Ce)—Si—O thoroughly with Si3N4 to create a powder mixture and firing the powder mixture twice in a tube furnace at a temperature of 1350° C. under flowing N2 at 1 to 4 liters per minute.
US11541755 2005-09-30 2006-10-02 Nitride and oxy-nitride cerium based phosphor materials for solid-state lighting applications Abandoned US20070075629A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US72268205 true 2005-09-30 2005-09-30
US72290005 true 2005-09-30 2005-09-30
US11541755 US20070075629A1 (en) 2005-09-30 2006-10-02 Nitride and oxy-nitride cerium based phosphor materials for solid-state lighting applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11541708 US8920676B2 (en) 2005-09-30 2006-10-02 Cerium based phosphor materials for solid-state lighting applications
US11541755 US20070075629A1 (en) 2005-09-30 2006-10-02 Nitride and oxy-nitride cerium based phosphor materials for solid-state lighting applications

Publications (1)

Publication Number Publication Date
US20070075629A1 true true US20070075629A1 (en) 2007-04-05

Family

ID=37906766

Family Applications (2)

Application Number Title Priority Date Filing Date
US11541708 Active 2030-07-22 US8920676B2 (en) 2005-09-30 2006-10-02 Cerium based phosphor materials for solid-state lighting applications
US11541755 Abandoned US20070075629A1 (en) 2005-09-30 2006-10-02 Nitride and oxy-nitride cerium based phosphor materials for solid-state lighting applications

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US11541708 Active 2030-07-22 US8920676B2 (en) 2005-09-30 2006-10-02 Cerium based phosphor materials for solid-state lighting applications

Country Status (5)

Country Link
US (2) US8920676B2 (en)
JP (2) JP2009510230A (en)
KR (2) KR20080059419A (en)
EP (3) EP1929502A4 (en)
WO (2) WO2007041563A3 (en)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070159066A1 (en) * 2005-09-30 2007-07-12 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US20070262339A1 (en) * 2006-04-24 2007-11-15 Cree, Inc. Side-View Surface Mount White LED
US20080283864A1 (en) * 2007-05-16 2008-11-20 Letoquin Ronan P Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices
US20090121615A1 (en) * 2007-11-14 2009-05-14 Cree, Inc. Cerium and Europium Doped Phosphor Compositions and Light Emitting Devices Including the Same
EP2117055A2 (en) 2008-05-05 2009-11-11 Cree, Inc. Method of Fabricating Light Emitting Devices
US20110096560A1 (en) * 2009-10-23 2011-04-28 Samsung Led Co., Ltd. Phosphor, method for preparing and using the same, light emitting device package, surface light source apparatus and lighting apparatus using red phosphor
US20110215355A1 (en) * 2010-03-08 2011-09-08 Van De Ven Antony P Photonic crystal phosphor light conversion structures for light emitting devices
US20110234118A1 (en) * 2010-03-26 2011-09-29 Samsung Led Co., Ltd. Complex Crystal Phosphor, Light Emitting Device, Surface Light Source Apparatus, Display Apparatus, and Lighting Device
WO2011142770A1 (en) * 2010-05-14 2011-11-17 Lightscape Materials, Inc. Carbonitride based phosphors and light emitting devices using the same
GB2482312A (en) * 2010-07-28 2012-02-01 Sharp Kk II-III-V semiconductor material, comprising the Group II elements Zn or Mg, Group III elements In or Ga or Al and Group V elements N or P
US20120140438A1 (en) * 2009-07-11 2012-06-07 Merck Patent Gesellschaft Mit Beschrankter Haftung Co-doped silicooxynitrides
CN102597602A (en) * 2009-09-18 2012-07-18 瓦洛亚公司 Horticultural LED lighting assembly
EP2489717A1 (en) * 2011-01-24 2012-08-22 Panasonic Electric Works Co., Ltd Illumination device
US20120286647A1 (en) * 2010-02-03 2012-11-15 Koninklijke Philips Electronics N.V. Phosphor converted LED
EP2597129A1 (en) * 2011-11-16 2013-05-29 Kabushiki Kaisha Toshiba Luminescent materials on the basis of cerium doped SrSiAlON derivates
CN103314074A (en) * 2010-09-20 2013-09-18 三星电子株式会社 Sialon phosphor, method for producing same, and light-emitting device package using same
US8900489B2 (en) 2010-07-28 2014-12-02 Sharp Kabushiki Kaisha II-III-N semiconductor nanoparticles and method of making same
US9030103B2 (en) 2013-02-08 2015-05-12 Cree, Inc. Solid state light emitting devices including adjustable scotopic / photopic ratio
US9039746B2 (en) * 2013-02-08 2015-05-26 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects
US20150205189A1 (en) * 2014-01-23 2015-07-23 Seiko Epson Corporation Fluorescent light emitting element and projector
EP2837669A4 (en) * 2012-03-16 2015-08-12 Toshiba Kk Phosphor, phosphor production method, and light-emitting device
EP2910621A1 (en) * 2014-02-25 2015-08-26 Kabushiki Kaisha Toshiba Phosphor, light-emitting device and method for producing phosphor
EP2915862A1 (en) * 2014-03-03 2015-09-09 Kabushiki Kaisha Toshiba Phosphor and producing method of phosphor and light-emitting device employing the same
CN105023995A (en) * 2014-04-30 2015-11-04 株式会社东芝 Light emitting means
DE102015110258A1 (en) * 2015-06-25 2016-12-29 Osram Gmbh Phosphor, method for producing a phosphor, and use of a phosphor

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4899431B2 (en) * 2005-11-12 2012-03-21 日亜化学工業株式会社 Nitride phosphor and light emitting device using the same
WO2008129454A3 (en) * 2007-04-20 2008-12-18 Philips Intellectual Property White emitting light source and luminescent material with improved colour stability
KR101352921B1 (en) * 2007-05-25 2014-01-24 삼성디스플레이 주식회사 Light source module, back-light assembly having the light source module and display apparatus having the back-light assembly
KR101067362B1 (en) * 2008-12-24 2011-09-23 순천대학교 산학협력단 Red phospor based on nitride
CN102804322A (en) * 2009-06-16 2012-11-28 加利福尼亚大学董事会 Oxyfluoride phosphors and white light emitting diodes including the oxyfluoride phosphor for solid-state lighting applications
CN101872825B (en) * 2010-04-29 2013-05-15 华侨大学 Novel method for preparing high-power white LED with low color temperature and high color rendering property
KR101760788B1 (en) * 2010-09-20 2017-07-24 삼성전자주식회사 Red phosphor, method for preparing the same, light emitting device comprising the red phosphor
EP2532224A1 (en) * 2011-06-10 2012-12-12 Valoya Oy Method and means for improving plant productivity through enhancing insect pollination success in plant cultivation
KR20130063731A (en) 2011-12-07 2013-06-17 순천대학교 산학협력단 Oxinitride phosphor and light emitting device comprising the same

Citations (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2308736A (en) * 1940-08-07 1943-01-19 Gen Electric Luminescent material
US2542349A (en) * 1948-08-05 1951-02-20 Gen Electric Calcium silicate phosphor
US2835636A (en) * 1954-01-07 1958-05-20 Westinghouse Electric Corp Cerium-activated magnesium metaphosphate phosphor, with and without manganese
US3014877A (en) * 1959-06-17 1961-12-26 Thorn Electrical Ind Ltd Luminescent materials
US3360674A (en) * 1964-11-23 1967-12-26 Sylvania Electric Prod Europium and bismuth activated yttrium vanadate phosphor
US5063183A (en) * 1985-08-13 1991-11-05 Tokuyama Soda Kabushiki Kaisha Sinterable aluminum nitride composition, sintered body from this composition and process for producing the sintered body
US5998925A (en) * 1996-07-29 1999-12-07 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material
US6084250A (en) * 1997-03-03 2000-07-04 U.S. Philips Corporation White light emitting diode
US6155699A (en) * 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
US20010001207A1 (en) * 1996-07-29 2001-05-17 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device and display
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6278135B1 (en) * 1998-02-06 2001-08-21 General Electric Company Green-light emitting phosphors and light sources using the same
US6357889B1 (en) * 1999-12-01 2002-03-19 General Electric Company Color tunable light source
US20030006702A1 (en) * 1999-02-18 2003-01-09 Lumileds Lighting, U.S., Llc Red-deficiency compensating phosphor light emitting device
US6521915B2 (en) * 2000-03-14 2003-02-18 Asahi Rubber Inc. Light-emitting diode device
US20030052595A1 (en) * 2001-09-20 2003-03-20 Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh Illumination unit having at least one LED as light source
US6544437B2 (en) * 1999-12-23 2003-04-08 Samsung Sdi Co., Ltd. Yttrium silicate based phosphor having effective emission at low voltages and method for synthesizing the same
US6558574B2 (en) * 1999-12-23 2003-05-06 Samsung Sdi Co., Ltd. Red phosphor having effective emission at low voltages and method for preparing the same using conductive luminescent material
US6657379B2 (en) * 2001-07-16 2003-12-02 Patent-Treuhand-Gesellschaft Fur Elektrische Gluehlampen Mbh Illumination unit having at least one LED as light source
US6670748B2 (en) * 2001-09-25 2003-12-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Illumination unit having at least one LED as light source
US6682663B2 (en) * 1999-11-30 2004-01-27 Osram Opto Semiconductors Gmbh Pigment with day-light fluorescence
US6717349B2 (en) * 2001-05-29 2004-04-06 Antex Industry Co., Ltd. Process for the preparation of pink light-emitting diode with high brightness
US6717353B1 (en) * 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
US6746295B2 (en) * 1999-04-22 2004-06-08 Osram-Opto Semiconductors Gmbh & Co. Ohg Method of producing an LED light source with lens
US6809781B2 (en) * 2002-09-24 2004-10-26 General Electric Company Phosphor blends and backlight sources for liquid crystal displays
US20040211970A1 (en) * 2003-04-24 2004-10-28 Yoshiaki Hayashimoto Semiconductor light emitting device with reflectors having cooling function
US6869753B2 (en) * 2002-10-11 2005-03-22 Agilent Technologies, Inc. Screen printing process for light emitting base layer
WO2005052087A1 (en) * 2003-11-26 2005-06-09 Independent Administrative Institution National Institute For Materials Science Phosphor and light emission appliance using phosphor
US20050156510A1 (en) * 2004-01-21 2005-07-21 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials
US20050189863A1 (en) * 2004-02-27 2005-09-01 Dowa Mining Co., Ltd. Phosphor, light source and LED
US20050212397A1 (en) * 2003-10-28 2005-09-29 Nichia Corporation Fluorescent material and light-emitting device
US20050242329A1 (en) * 2003-12-22 2005-11-03 Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh Phosphor and light source comprising such a phosphor
US20060006782A1 (en) * 2004-07-09 2006-01-12 Dowa Mining Co., Ltd. Phosphor, LED and light source
US20060033083A1 (en) * 2004-07-28 2006-02-16 Dowa Mining Co., Ltd. Phosphor and manufacturing method for the same, and light source
US7018345B2 (en) * 2002-12-06 2006-03-28 Hisamitsu Pharmaceutical Co., Inc. Iontophoresis system
US7026755B2 (en) * 2003-08-07 2006-04-11 General Electric Company Deep red phosphor for general illumination applications
US7045826B2 (en) * 2003-03-28 2006-05-16 Korea Research Institute Of Chemical Technology Strontium silicate-based phosphor, fabrication method thereof, and LED using the phosphor
US7077979B2 (en) * 2003-10-10 2006-07-18 The Regents Of The University Of California Red phosphors for solid state lighting
US20070159091A1 (en) * 2004-02-18 2007-07-12 National Institute For Materials Science Light emitting element and lighting instrument
US20070159066A1 (en) * 2005-09-30 2007-07-12 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US20070241666A1 (en) * 2006-04-17 2007-10-18 Ho-Seong Jang Yellow light emitting Ce3+-activated silicate phosphor with new composition, manufacturing method thereof and white LEDs including phosphor
US7332106B2 (en) * 2003-08-28 2008-02-19 Mitsubishi Chemical Corporation Light-emitting device and phosphor
US20080054793A1 (en) * 2006-08-30 2008-03-06 Everlight Electronics Co., Ltd. White light-emitting apparatus
US20090212314A1 (en) * 2008-02-27 2009-08-27 The Regents Of The University Of California YELLOW EMITTING PHOSPHORS BASED ON Ce3+-DOPED ALUMINATE AND VIA SOLID SOLUTION FOR SOLID-STATE LIGHTING APPLICATIONS
US20090236969A1 (en) * 2005-03-22 2009-09-24 National Institute For Materials Science Fluorescent substance, process for producing the same, and luminescent device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5030600A (en) 1988-10-06 1991-07-09 Benchmark Structural Ceramics Corp. Novel sialon composition
JP2927279B2 (en) * 1996-07-29 1999-07-28 日亜化学工業株式会社 Light emitting diode
US6504301B1 (en) 1999-09-03 2003-01-07 Lumileds Lighting, U.S., Llc Non-incandescent lightbulb package using light emitting diodes
JP3736357B2 (en) * 2001-02-06 2006-01-18 松下電器産業株式会社 Illuminating the phosphor, the light emitting diode using the illuminating phosphor, and a phosphor coating method of
JP2004115659A (en) 2002-09-26 2004-04-15 Sumitomo Chem Co Ltd Fluorescent substance for vacuum ultraviolet-excited light emitting element
WO2005049763A1 (en) * 2003-11-19 2005-06-02 Matsushita Electric Industrial Co., Ltd. Method for producing nitridosilicate-based compound, nitridosilicate phosphor, and light-emitting apparatus using the nitridosilicate phosphor
JP4233466B2 (en) * 2004-02-12 2009-03-04 三菱化学株式会社 Light-emitting device, a lighting device and a display device
JP4362625B2 (en) 2004-02-18 2009-11-11 独立行政法人物質・材料研究機構 Manufacturing method of the phosphor
DE602005018022D1 (en) * 2004-02-20 2010-01-14 Philips Intellectual Property Illumination system comprising a radiation source and a fluorescent material
JP4521227B2 (en) 2004-07-14 2010-08-11 東芝マテリアル株式会社 Method for producing a phosphor containing nitrogen
DE102005005263A1 (en) 2005-02-04 2006-08-10 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Yellow-emitting phosphor and a light source with such phosphor
KR100533922B1 (en) 2005-08-05 2005-12-06 알티전자 주식회사 Yellow phosphor and white light emitting device using there
US8277687B2 (en) * 2005-08-10 2012-10-02 Mitsubishi Chemical Corporation Phosphor and light-emitting device using same

Patent Citations (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2308736A (en) * 1940-08-07 1943-01-19 Gen Electric Luminescent material
US2542349A (en) * 1948-08-05 1951-02-20 Gen Electric Calcium silicate phosphor
US2835636A (en) * 1954-01-07 1958-05-20 Westinghouse Electric Corp Cerium-activated magnesium metaphosphate phosphor, with and without manganese
US3014877A (en) * 1959-06-17 1961-12-26 Thorn Electrical Ind Ltd Luminescent materials
US3360674A (en) * 1964-11-23 1967-12-26 Sylvania Electric Prod Europium and bismuth activated yttrium vanadate phosphor
US5063183A (en) * 1985-08-13 1991-11-05 Tokuyama Soda Kabushiki Kaisha Sinterable aluminum nitride composition, sintered body from this composition and process for producing the sintered body
US20010001207A1 (en) * 1996-07-29 2001-05-17 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device and display
US6608332B2 (en) * 1996-07-29 2003-08-19 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device and display
US5998925A (en) * 1996-07-29 1999-12-07 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent material
US6084250A (en) * 1997-03-03 2000-07-04 U.S. Philips Corporation White light emitting diode
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6278135B1 (en) * 1998-02-06 2001-08-21 General Electric Company Green-light emitting phosphors and light sources using the same
US20030006702A1 (en) * 1999-02-18 2003-01-09 Lumileds Lighting, U.S., Llc Red-deficiency compensating phosphor light emitting device
US6155699A (en) * 1999-03-15 2000-12-05 Agilent Technologies, Inc. Efficient phosphor-conversion led structure
US6746295B2 (en) * 1999-04-22 2004-06-08 Osram-Opto Semiconductors Gmbh & Co. Ohg Method of producing an LED light source with lens
US6682663B2 (en) * 1999-11-30 2004-01-27 Osram Opto Semiconductors Gmbh Pigment with day-light fluorescence
US6357889B1 (en) * 1999-12-01 2002-03-19 General Electric Company Color tunable light source
US6544437B2 (en) * 1999-12-23 2003-04-08 Samsung Sdi Co., Ltd. Yttrium silicate based phosphor having effective emission at low voltages and method for synthesizing the same
US6558574B2 (en) * 1999-12-23 2003-05-06 Samsung Sdi Co., Ltd. Red phosphor having effective emission at low voltages and method for preparing the same using conductive luminescent material
US6521915B2 (en) * 2000-03-14 2003-02-18 Asahi Rubber Inc. Light-emitting diode device
US6717349B2 (en) * 2001-05-29 2004-04-06 Antex Industry Co., Ltd. Process for the preparation of pink light-emitting diode with high brightness
US6657379B2 (en) * 2001-07-16 2003-12-02 Patent-Treuhand-Gesellschaft Fur Elektrische Gluehlampen Mbh Illumination unit having at least one LED as light source
US20030052595A1 (en) * 2001-09-20 2003-03-20 Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh Illumination unit having at least one LED as light source
US6670748B2 (en) * 2001-09-25 2003-12-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Illumination unit having at least one LED as light source
US6809781B2 (en) * 2002-09-24 2004-10-26 General Electric Company Phosphor blends and backlight sources for liquid crystal displays
US6869753B2 (en) * 2002-10-11 2005-03-22 Agilent Technologies, Inc. Screen printing process for light emitting base layer
US6717353B1 (en) * 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
US7018345B2 (en) * 2002-12-06 2006-03-28 Hisamitsu Pharmaceutical Co., Inc. Iontophoresis system
US7045826B2 (en) * 2003-03-28 2006-05-16 Korea Research Institute Of Chemical Technology Strontium silicate-based phosphor, fabrication method thereof, and LED using the phosphor
US20040211970A1 (en) * 2003-04-24 2004-10-28 Yoshiaki Hayashimoto Semiconductor light emitting device with reflectors having cooling function
US7026755B2 (en) * 2003-08-07 2006-04-11 General Electric Company Deep red phosphor for general illumination applications
US7332106B2 (en) * 2003-08-28 2008-02-19 Mitsubishi Chemical Corporation Light-emitting device and phosphor
US7220369B2 (en) * 2003-10-10 2007-05-22 The Regents Of The University Of California Red phosphors for solid state lighting
US7077979B2 (en) * 2003-10-10 2006-07-18 The Regents Of The University Of California Red phosphors for solid state lighting
US20050212397A1 (en) * 2003-10-28 2005-09-29 Nichia Corporation Fluorescent material and light-emitting device
US20070007494A1 (en) * 2003-11-26 2007-01-11 National Institute For Materials Science Phosphor and light-emitting equipment using phosphor
WO2005052087A1 (en) * 2003-11-26 2005-06-09 Independent Administrative Institution National Institute For Materials Science Phosphor and light emission appliance using phosphor
US20050242329A1 (en) * 2003-12-22 2005-11-03 Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh Phosphor and light source comprising such a phosphor
US20050156510A1 (en) * 2004-01-21 2005-07-21 Chua Janet B.Y. Device and method for emitting output light using group IIB element selenide-based and group IIA element gallium sulfide-based phosphor materials
US20070159091A1 (en) * 2004-02-18 2007-07-12 National Institute For Materials Science Light emitting element and lighting instrument
US20050189863A1 (en) * 2004-02-27 2005-09-01 Dowa Mining Co., Ltd. Phosphor, light source and LED
US7252788B2 (en) * 2004-02-27 2007-08-07 Dowa Mining Co., Ltd. Phosphor, light source and LED
US20060006782A1 (en) * 2004-07-09 2006-01-12 Dowa Mining Co., Ltd. Phosphor, LED and light source
US20060033083A1 (en) * 2004-07-28 2006-02-16 Dowa Mining Co., Ltd. Phosphor and manufacturing method for the same, and light source
US20090236969A1 (en) * 2005-03-22 2009-09-24 National Institute For Materials Science Fluorescent substance, process for producing the same, and luminescent device
US20070159066A1 (en) * 2005-09-30 2007-07-12 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US20070241666A1 (en) * 2006-04-17 2007-10-18 Ho-Seong Jang Yellow light emitting Ce3+-activated silicate phosphor with new composition, manufacturing method thereof and white LEDs including phosphor
US20080054793A1 (en) * 2006-08-30 2008-03-06 Everlight Electronics Co., Ltd. White light-emitting apparatus
US20090212314A1 (en) * 2008-02-27 2009-08-27 The Regents Of The University Of California YELLOW EMITTING PHOSPHORS BASED ON Ce3+-DOPED ALUMINATE AND VIA SOLID SOLUTION FOR SOLID-STATE LIGHTING APPLICATIONS

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Orna. The Chemical History of Color. Springer New York 2013. Page 15 *

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070159066A1 (en) * 2005-09-30 2007-07-12 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US8920676B2 (en) 2005-09-30 2014-12-30 The Regents Of The University Of California Cerium based phosphor materials for solid-state lighting applications
US20070262339A1 (en) * 2006-04-24 2007-11-15 Cree, Inc. Side-View Surface Mount White LED
US8362512B2 (en) 2006-04-24 2013-01-29 Cree, Inc. Side-view surface mount white LED
US8390022B2 (en) 2006-04-24 2013-03-05 Cree, Inc. Side view surface mount LED
US20100090233A1 (en) * 2006-04-24 2010-04-15 Cree, Inc. Side-view surface mount white led
US7649209B2 (en) 2006-04-24 2010-01-19 Cree, Inc. Side-view surface mount white LED
US8487337B2 (en) 2006-04-24 2013-07-16 Cree, Inc. Side view surface mount LED
US20080283864A1 (en) * 2007-05-16 2008-11-20 Letoquin Ronan P Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices
US8119028B2 (en) 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
EP2060614A2 (en) 2007-11-14 2009-05-20 Cree, Inc. Cerium and europium doped phosphor compositions and light emitting devices including the same
EP2481786A1 (en) 2007-11-14 2012-08-01 Cree, Inc. Cerium and europium doped phosphor compositions and light emitting devices including the same
US20090121615A1 (en) * 2007-11-14 2009-05-14 Cree, Inc. Cerium and Europium Doped Phosphor Compositions and Light Emitting Devices Including the Same
US8038497B2 (en) 2008-05-05 2011-10-18 Cree, Inc. Methods of fabricating light emitting devices by selective deposition of light conversion materials based on measured emission characteristics
EP2117055A2 (en) 2008-05-05 2009-11-11 Cree, Inc. Method of Fabricating Light Emitting Devices
US20090286335A1 (en) * 2008-05-05 2009-11-19 Cree, Inc. Methods of fabricating light emitting devices by selective deposition of light conversion materials based on measured emission characteristics
US8721925B2 (en) * 2009-07-11 2014-05-13 Merck Patent Gmbh Co-doped silicooxynitrides
US20120140438A1 (en) * 2009-07-11 2012-06-07 Merck Patent Gesellschaft Mit Beschrankter Haftung Co-doped silicooxynitrides
CN102597602A (en) * 2009-09-18 2012-07-18 瓦洛亚公司 Horticultural LED lighting assembly
US9516818B2 (en) 2009-09-18 2016-12-13 Valoya Oy Lighting assembly
US8850743B2 (en) 2009-09-18 2014-10-07 Valoya Oy Lighting assembly
US8773012B2 (en) 2009-10-23 2014-07-08 Samsung Electronics Co., Ltd. Phosphor, method for preparing and using the same, light emitting device package, surface light source apparatus and lighting apparatus using red phosphor
US8652357B2 (en) * 2009-10-23 2014-02-18 Samsung Electronics Co., Ltd. Phosphor, method for preparing and using the same, light emitting device package, surface light source apparatus and lighting apparatus using red phosphor
US20110096560A1 (en) * 2009-10-23 2011-04-28 Samsung Led Co., Ltd. Phosphor, method for preparing and using the same, light emitting device package, surface light source apparatus and lighting apparatus using red phosphor
US20120286647A1 (en) * 2010-02-03 2012-11-15 Koninklijke Philips Electronics N.V. Phosphor converted LED
US20110215355A1 (en) * 2010-03-08 2011-09-08 Van De Ven Antony P Photonic crystal phosphor light conversion structures for light emitting devices
US20110234118A1 (en) * 2010-03-26 2011-09-29 Samsung Led Co., Ltd. Complex Crystal Phosphor, Light Emitting Device, Surface Light Source Apparatus, Display Apparatus, and Lighting Device
US8821758B2 (en) 2010-03-26 2014-09-02 Samsung Electronics Co., Ltd. Complex crystal phosphor, light emitting device, surface light source apparatus, display apparatus, and lighting device
WO2011142770A1 (en) * 2010-05-14 2011-11-17 Lightscape Materials, Inc. Carbonitride based phosphors and light emitting devices using the same
US8900489B2 (en) 2010-07-28 2014-12-02 Sharp Kabushiki Kaisha II-III-N semiconductor nanoparticles and method of making same
GB2482312A (en) * 2010-07-28 2012-02-01 Sharp Kk II-III-V semiconductor material, comprising the Group II elements Zn or Mg, Group III elements In or Ga or Al and Group V elements N or P
CN103314074A (en) * 2010-09-20 2013-09-18 三星电子株式会社 Sialon phosphor, method for producing same, and light-emitting device package using same
US9391245B2 (en) 2010-09-20 2016-07-12 Samsung Electronics Co., Ltd. Sialon phosphor, method for producing same, and light-emitting device package using same
EP2489717A1 (en) * 2011-01-24 2012-08-22 Panasonic Electric Works Co., Ltd Illumination device
EP2597129A1 (en) * 2011-11-16 2013-05-29 Kabushiki Kaisha Toshiba Luminescent materials on the basis of cerium doped SrSiAlON derivates
US9133391B2 (en) 2011-11-16 2015-09-15 Kabushiki Kaisha Toshiba Luminescent material
US9487696B2 (en) 2012-03-16 2016-11-08 Kabushiki Kaisha Toshiba Phosphor of SiAlON crystal, method for producing phosphor and light emitting device
EP2837669A4 (en) * 2012-03-16 2015-08-12 Toshiba Kk Phosphor, phosphor production method, and light-emitting device
US9039746B2 (en) * 2013-02-08 2015-05-26 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects
US9030103B2 (en) 2013-02-08 2015-05-12 Cree, Inc. Solid state light emitting devices including adjustable scotopic / photopic ratio
US9661715B2 (en) 2013-02-08 2017-05-23 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects
US9429830B2 (en) * 2014-01-23 2016-08-30 Seiko Epson Corporation Fluorescent light emitting element and projector
US20150205189A1 (en) * 2014-01-23 2015-07-23 Seiko Epson Corporation Fluorescent light emitting element and projector
EP2910621A1 (en) * 2014-02-25 2015-08-26 Kabushiki Kaisha Toshiba Phosphor, light-emitting device and method for producing phosphor
EP2915862A1 (en) * 2014-03-03 2015-09-09 Kabushiki Kaisha Toshiba Phosphor and producing method of phosphor and light-emitting device employing the same
CN105023995A (en) * 2014-04-30 2015-11-04 株式会社东芝 Light emitting means
US20150318451A1 (en) * 2014-04-30 2015-11-05 Kabushiki Kaisha Toshiba Light emitting device
DE102015110258A1 (en) * 2015-06-25 2016-12-29 Osram Gmbh Phosphor, method for producing a phosphor, and use of a phosphor

Also Published As

Publication number Publication date Type
JP2009510230A (en) 2009-03-12 application
JP2009512741A (en) 2009-03-26 application
WO2007041563A3 (en) 2009-04-23 application
WO2007041402A3 (en) 2008-11-13 application
EP1929502A4 (en) 2010-03-24 application
KR20080059418A (en) 2008-06-27 application
US8920676B2 (en) 2014-12-30 grant
US20070159066A1 (en) 2007-07-12 application
EP1929501A2 (en) 2008-06-11 application
WO2007041402A2 (en) 2007-04-12 application
WO2007041563A2 (en) 2007-04-12 application
EP2236580A3 (en) 2010-11-03 application
EP2236580A2 (en) 2010-10-06 application
KR20080059419A (en) 2008-06-27 application
EP1929501A4 (en) 2010-01-06 application
EP1929502A2 (en) 2008-06-11 application

Similar Documents

Publication Publication Date Title
Shang et al. How to produce white light in a single-phase host?
Jang et al. Enhancement of red spectral emission intensity of Y3Al5O12: Ce3+ phosphor via Pr co-doping and Tb substitution for the application to white LEDs
US7002291B2 (en) LED-based white-emitting illumination unit
Shang et al. Blue emitting Ca8La2 (PO4) 6O2: Ce3+/Eu2+ phosphors with high color purity and brightness for white LED: soft-chemical synthesis, luminescence, and energy transfer properties
US6621211B1 (en) White light emitting phosphor blends for LED devices
Guo et al. Methods to improve the fluorescence intensity of CaS: Eu2+ red-emitting phosphor for white LED
US7329371B2 (en) Red phosphor for LED based lighting
US20050230689A1 (en) Ce3+ and Eu2+ doped phosphors for light generation
US7575697B2 (en) Silicate-based green phosphors
Liu et al. High efficiency and high color purity blue-emitting NaSrBO 3: Ce 3+ phosphor for near-UV light-emitting diodes
US6850002B2 (en) Light emitting device for generating specific colored light, including white light
US20060022582A1 (en) White LEDs with tunable CRI
RU2251761C2 (en) Light source with light-emitting component
US20080111472A1 (en) Aluminum-silicate based orange-red phosphors with mixed divalent and trivalent cations
US20060017041A1 (en) Nitride phosphors and devices
US7252787B2 (en) Garnet phosphor materials having enhanced spectral characteristics
Le Toquin et al. Red-emitting cerium-based phosphor materials for solid-state lighting applications
Wu et al. Luminescence and energy transfer of a color tunable phosphor: Dy 3+-, Tm 3+-, and Eu 3+-coactivated KSr 4 (BO 3) 3 for warm white UV LEDs
US7311858B2 (en) Silicate-based yellow-green phosphors
US7038370B2 (en) Phosphor converted light emitting device
US6255670B1 (en) Phosphors for light generation from light emitting semiconductors
US20070108896A1 (en) Fluorescent substance, method for manufacturing the same, illuminator and image display device
US20060049414A1 (en) Novel oxynitride phosphors
US20060027785A1 (en) Novel silicate-based yellow-green phosphors
US20070257596A1 (en) Fluorescent Material, Fluorescent Device Using the Same, and Image Display Device and Lighting Equipment

Legal Events

Date Code Title Description
AS Assignment

Owner name: REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE, CALI

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LE TOQUIN, RONAN P.;CHEETHAM, ANTHONY K.;REEL/FRAME:018382/0151

Effective date: 20060929

AS Assignment

Owner name: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, CALIF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TOQUIN, RONAN P. LE;REEL/FRAME:018562/0986

Effective date: 20061114