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US20070050077A1 - Chemical Mechanical Polishing Method and Apparatus - Google Patents

Chemical Mechanical Polishing Method and Apparatus Download PDF

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Publication number
US20070050077A1
US20070050077A1 US11551793 US55179306A US2007050077A1 US 20070050077 A1 US20070050077 A1 US 20070050077A1 US 11551793 US11551793 US 11551793 US 55179306 A US55179306 A US 55179306A US 2007050077 A1 US2007050077 A1 US 2007050077A1
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Prior art keywords
wafer
polishing
flow
pad
surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11551793
Inventor
Joe Tran
Chad Kaneshige
Brian Kirkpatrick
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Texas Instruments Inc
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Texas Instruments Inc
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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step

Abstract

A method for removing material from the surface of a semiconductor wafer with a chemical mechanical polishing process is described. The method uses a polishing pad on which a line-pattern of grooves is formed. The pattern comprises orderly spaced grooved-area and area without grooves. The method combines information of the surface topography of the wafer, the nature of the material to be removed, and the available groove pattern on the surface of the polishing pad to generate a process recipe in which the resident time of portions of the semiconductor wafer spends at the grooved and un-grooved areas of the polishing pad during the chemical mechanical polishing process is pre-determined.

Description

  • [0001]
    This is a divisional of U.S. application Ser. No. 10/697,676 filed Oct. 30, 2003, which is incorporated herein by reference in its entirety.
  • BACKGROUND OF THE INVENTION
  • [0002]
    This invention relates to semiconductor processing, particularly to a chemical mechanical polishing method and apparatus with which to achieve superior global and local wafer planarity control.
  • [0003]
    Modern integrated-circuit technology is capable of packing a large number of circuit-components at near the surface of a semiconductor wafer by scaling down the feature size of the circuit-components and connects the components with a large number of metal lines imbedded in a matrix of multiple layers of metal and dielectric material. Beneath the silicon wafer surface, the circuit-elements are isolated from each other by regions of silicon dioxide in shallow trenches to prevent unwanted electrical current passage between the circuit-elements.
  • [0004]
    Because of the downward scaling of the feature size and the increasing complexity of interconnecting scheme, the wafer process requires a high degree of wafer surface planarization. Specifically, the wafer surface must be planarized locally as well as globally after the formation of the shallow trenches and at all interconnect levels. Currently the technique of chemical mechanical polishing is the only satisfactory technique with which the necessary degree of planarization can be achieved.
  • [0005]
    In a chemical mechanical polishing operation, a semiconductor wafer is mounted upside down on a wafer-carrier, and the carrier is pressed downward against a polishing pad, which is motion with respect to the rotating wafer-carrier. Slurry comprised of silica or cerium oxide particles, for example, suspended in alkaline to slightly acid solution drips onto the polishing pad that has flow channels machined to transport the slurry beneath the rotating wafer carrier where it polishes the wafer surface.
  • [0006]
    The most popular type of chemical mechanical polisher is the rotary polisher in which both a platen and the wafer-carrier rotate. The carrier holds the wafer face down, and applies a downward force against the surface of the pad. The pad is mounted on a rotating platen by waterproof adhesive. The wafer-carrier rotates about the center point of the wafer and it oscillates along a radius of the platen such that the entire wafer surface contacts the polishing pad during the polishing operation.
  • [0007]
    Some types of the polishing pads are made of materials that absorb the slurry; other types are made of materials that do not have the ability to absorb the slurry.
  • [0008]
    The rate of removal of the target material is a function of the pressure that the pad exerts on the wafer surface, the relative speed between the pad and the wafer surface, and the nature of the slurry.
  • BRIEF DESCRIPTION OF DRAWINGS
  • [0009]
    FIG. 1 depicts a cross section of a semiconductor wafer.
  • [0010]
    FIG. 2 depicts a polishing pad with a flow-channel pattern of the present invention.
  • [0011]
    FIG. 3 depicts a cross section of another semiconductor wafer.
  • [0012]
    FIG. 4 depicts another polishing pad with a flow-channel pattern of the present invention.
  • [0013]
    FIG. 5 depicts a flowchart of a chemical mechanical polishing process of the present invention.
  • DESCRIPTION OF THE PREFERRED EMBODIMENT
  • [0014]
    The applicants recognize that with today's rotary chemical mechanical polisher, different portions of the wafer experience different relative speed with respect to the polishing pad during the polishing operation. The applicants also recognize that different processes that deposit the target material on the wafer surface may effects different built-in non-planarity on the wafer surface. In certain instances, the target material coating on the wafer may be thicker at the center while in other instances the coating is thicker at the edges.
  • [0015]
    The applicants further recognize that the rate of removing the target material depends on the presence of the slurry at the point where the wafer contacts the polishing pad. With a polishing pad made of material such as polyurethane, polycarbonate, nylon, acrylic polymer, or polyester, the slurry is transported to the contact point by the flow channels machined onto the polishing pad. Therefore, the rate of target material removal is a function of the dimension and density of the flow channels—a wafer gliding over an area on the polishing pad that has more densely placed flow channels will have more of the target material removed than over an area that has more sparsely placed flow channels.
  • [0016]
    Therefore, the applicants discovered that with a properly designed flow-channel pattern, desired planarity can be achieved even when the surface topography of the target material as formed is highly un-planar. The following exemplary embodiments are for the purpose of describing this invention.
  • [0017]
    FIG. 1 depicts the cross-section view of a silicon wafer 10 with a deposited layer of silicon dioxide 20. The dioxide layer may be formed following the formation of shallow trench isolation.
  • [0018]
    In FIG. 1, the silicon dioxide layer 20 is outwardly tapered—its thickness at the center of the wafer is greater than at the edge of the wafer. In order to compensate for this outward-tapering, it is advantageous to use a polishing pad that has a pattern of flow channels as depicted in FIG. 2.
  • [0019]
    FIG. 2 depicts a polishing pad 100, which may be made of material such as polyurethane. FIG. 2 also depicts two areas A and B of the polishing pad and the enlargements A′ and B′ of the two areas, and the flow channels in the areas. Note that the spacing between the flow channels in area A is ‘a’ and the spacing between the flow channels in area B is ‘b’. To polish an outwardly tapered wafer, the more favorable flow-channel pattern for polishing pad should be such that ‘a’ is wider than ‘b’—in some cases, area A may be free of any flow-channels. It is applicants' observation that during the polishing operation, the wafer and the wafer carrier oscillates along a line OP while rotating. As a result, the edge of the wafer travels along the edge of an ellipse E while the center portion of the wafer is confined in the interior of the ellipse E. A flow channel pattern such as depicted in FIG. 2 will achieve a polishing rate is lower at the edge of the wafer because of the more sparsely spaced flow channels at the location A.
  • [0020]
    FIG. 3 depicts the cross-section view of another silicon wafer 30 with a layer 40 coated on the top surface. In this case, the layer 40 is inwardly tapered so that it is thinner at the center than at the edge of the wafer. Layer 30 may be deposited on the silicon with a spin-on process. In order to compensate for inward-tapering, it is advantageous to use a polishing pad that has a pattern of flow channels as depicted in FIG. 4.
  • [0021]
    FIG. 4 depicts another polishing pad and two areas C and D on the polishing pad. Also depicted in FIG. 4 are the enlargements C′ and D′ of the two areas and the flow channels in the areas. The spacing between the flow channels in area C is ‘c’ and the spacing between the flow-channels in area D is ‘d’. To polish a inwardly-tapering wafer, the more favorable flow-channel pattern should be such that ‘d’ is wider than ‘c’—in some cases are D may be free of any flow-channels. A polishing pad having a flow-channel pattern as depicted in FIG. 4 removes the target material more slowly at the center of the wafer because of the more sparsely spaced flow-channels.
  • [0022]
    FIG. 5 is a flowchart for a chemical mechanical polishing process of the present invention. The process starts by providing a wafer having a coating of target material with a known surface topography to be polished 200. This topography may be ascertained by scanning the top surface of each wafer or by sample-scanning a representative wafer in a wafer-lot. As explained earlier, the topography of the coating is generally a function of how the coating is formed and the nature of the coating material. In case of a spin-on film such as a spin-on-glass, the film tends to be inwardly tapered as the spun-on material gets pushed outwardly by the centrifugal force of spinning operation to the edge of the wafer. In case of electro-plating, the location of the electrode and the current path in the wafer surface may cause the film to be outwardly tapered.
  • [0023]
    The next step is to select a polishing pad of a proper flow-channel pattern 300. As explained in the previous paragraphs, for a given relative polishing speed, an area of denser flow-channel usually removes target material at a higher rate.
  • [0024]
    The next step is to provide a recipe for the CMP operation 400. The recipe may include the rotational speed for the platen—polishing pad and the rotational speed for the wafer-carrier, the frequency of the wafer carrier oscillating along a radius of the platen, the slurry feeding rate, and endpoint detection data or a predetermined polishing time.
  • [0025]
    The next step is the actual polishing 500 of the wafer according to the recipe 400. When the predetermined polishing time is reached or when the endpoint detection mechanism triggers, the CMP operation is terminated 600.
  • [0026]
    The present invention may be applied to semiconductor wafer other than silicon. For example, the CMP method is applicable on compound semiconductor material. It is applicable on SiGe material. The target film may comprise other material such as silicon, tungsten or copper. The flow-channel may be of more than one width and one depth.

Claims (2)

  1. 1. A system for removing material from a surface of a semiconductor wafer, comprising
    a. a chemical mechanical polisher;
    b. a measuring means for measuring a topography of a semiconductor wafer surface;
    c. an inputting means for inputting wafer information including the nature and the amount of the material to be removed, the topographic measurement of the semiconductor wafer surface, and the chemical mechanical polisher information including a pattern information of a polishing surface of a polishing pad, the pattern information including location of a pattern of flow channels on of the polishing surface and location of a portion of the polishing surface free of flow channels;
    d. a storing means for storing information of step c; and
    e. a recipe generator for generating a recipe including parameter of resident time of a portion of the semiconductor wafer in the channeled portion of the polishing surface and the resident time of a portion of the semiconductor wafer in the channel-free portion of the polishing surface, based on the information stored in the storing means in step d.
  2. 2. The system of claim 1, in which the inputting means, the storing means, and the recipe generator are parts of a computer system.
US11551793 2003-10-30 2006-10-23 Chemical Mechanical Polishing Method and Apparatus Abandoned US20070050077A1 (en)

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US10697676 US7186651B2 (en) 2003-10-30 2003-10-30 Chemical mechanical polishing method and apparatus
US11551793 US20070050077A1 (en) 2003-10-30 2006-10-23 Chemical Mechanical Polishing Method and Apparatus

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080312876A1 (en) * 2007-06-15 2008-12-18 National Taiwan University Of Science And Technology Method of analyzing effective polishing frequency and number of polishing times on polishing pads having different patterns and profiles

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186651B2 (en) 2003-10-30 2007-03-06 Texas Instruments Incorporated Chemical mechanical polishing method and apparatus
US9387565B2 (en) * 2011-12-13 2016-07-12 Alderson (Nz) Limited Abrasive apparatus and components thereof
US9925637B2 (en) 2016-08-04 2018-03-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tapered poromeric polishing pad

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728552A (en) * 1984-07-06 1988-03-01 Rodel, Inc. Substrate containing fibers of predetermined orientation and process of making the same
US4841680A (en) * 1987-08-25 1989-06-27 Rodel, Inc. Inverted cell pad material for grinding, lapping, shaping and polishing
US4927432A (en) * 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5257478A (en) * 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5394655A (en) * 1993-08-31 1995-03-07 Texas Instruments Incorporated Semiconductor polishing pad
US5486129A (en) * 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5578362A (en) * 1992-08-19 1996-11-26 Rodel, Inc. Polymeric polishing pad containing hollow polymeric microelements
US5605760A (en) * 1995-08-21 1997-02-25 Rodel, Inc. Polishing pads
US6033520A (en) * 1995-10-09 2000-03-07 Ebara Corporation Apparatus for and method of polishing workpiece
US6306009B1 (en) * 1993-08-25 2001-10-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
US20020151253A1 (en) * 2001-01-08 2002-10-17 Kollodge Jeffrey S. Polishing pad and method of use thereof
US6736709B1 (en) * 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
US6824455B2 (en) * 1997-05-15 2004-11-30 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
US20050085169A1 (en) * 2001-03-08 2005-04-21 Cooper Richard D. Polishing pad for use in chemical - mechanical palanarization of semiconductor wafers and method of making same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6113462A (en) * 1997-12-18 2000-09-05 Advanced Micro Devices, Inc. Feedback loop for selective conditioning of chemical mechanical polishing pad
US6910947B2 (en) * 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
US7186651B2 (en) 2003-10-30 2007-03-06 Texas Instruments Incorporated Chemical mechanical polishing method and apparatus

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728552A (en) * 1984-07-06 1988-03-01 Rodel, Inc. Substrate containing fibers of predetermined orientation and process of making the same
US4927432A (en) * 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US4841680A (en) * 1987-08-25 1989-06-27 Rodel, Inc. Inverted cell pad material for grinding, lapping, shaping and polishing
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5257478A (en) * 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5578362A (en) * 1992-08-19 1996-11-26 Rodel, Inc. Polymeric polishing pad containing hollow polymeric microelements
US5900164A (en) * 1992-08-19 1999-05-04 Rodel, Inc. Method for planarizing a semiconductor device surface with polymeric pad containing hollow polymeric microelements
US6306009B1 (en) * 1993-08-25 2001-10-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
US5486129A (en) * 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
US5394655A (en) * 1993-08-31 1995-03-07 Texas Instruments Incorporated Semiconductor polishing pad
US5489233A (en) * 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
US5605760A (en) * 1995-08-21 1997-02-25 Rodel, Inc. Polishing pads
US6033520A (en) * 1995-10-09 2000-03-07 Ebara Corporation Apparatus for and method of polishing workpiece
US6824455B2 (en) * 1997-05-15 2004-11-30 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
US6736709B1 (en) * 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
US20020151253A1 (en) * 2001-01-08 2002-10-17 Kollodge Jeffrey S. Polishing pad and method of use thereof
US6612916B2 (en) * 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US20050085169A1 (en) * 2001-03-08 2005-04-21 Cooper Richard D. Polishing pad for use in chemical - mechanical palanarization of semiconductor wafers and method of making same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080312876A1 (en) * 2007-06-15 2008-12-18 National Taiwan University Of Science And Technology Method of analyzing effective polishing frequency and number of polishing times on polishing pads having different patterns and profiles
US7991216B2 (en) 2007-06-15 2011-08-02 National Taiwan University Of Science And Technology Method of analyzing effective polishing frequency and number of polishing times on polishing pads having different patterns and profiles

Also Published As

Publication number Publication date Type
US20050095863A1 (en) 2005-05-05 application
US7186651B2 (en) 2007-03-06 grant
US20060175294A1 (en) 2006-08-10 application

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