US20060263999A1 - Semiconductor capacitor structure and method to form same - Google Patents

Semiconductor capacitor structure and method to form same Download PDF

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US20060263999A1
US20060263999A1 US11/495,442 US49544206A US2006263999A1 US 20060263999 A1 US20060263999 A1 US 20060263999A1 US 49544206 A US49544206 A US 49544206A US 2006263999 A1 US2006263999 A1 US 2006263999A1
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forming
metal
capacitor
nitride
hemispherical grained
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Gurtej Sandhu
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions

Definitions

  • This invention relates to a semiconductor device and fabrication thereof and, more particularly, to a semiconductor capacitor structure and fabrication thereof.
  • the capacitor of a storage cell must reduce in size and yet maintain adequate capacitance to retain a sufficient charge, such as during Dynamic Random Access Memory (DRAM) operation.
  • DRAM Dynamic Random Access Memory
  • trench capacitors formed in the substrate of a wafer or a stacked capacitor formed above the wafer substrate to name two.
  • the size of the capacitor must be reduced and yet maintain sufficient capacitance as mentioned previously.
  • Two of the main contributors to capacitance are the surface area of the capacitor plates and the dielectric quality of the insulator separating the capacitor plates. Major engineering efforts have gone into improvements in both areas.
  • the capacitor design is chosen, another factor should be considered and that is the physical connection between the capacitor plate and the underlying conductor (i.e., a conductive plug between the capacitor plate and a source/drain of an access transistor or the source/drain of the access transistor itself). It is desirable that the physical connection between the capacitor plate and the underlying conductor consist of as low resistance as possible and thus provide for low “time at temperature” (DT) flow during fabrication processing.
  • DT time at temperature
  • a significant focus of the present invention is the development of a capacitor having a high surface area within a confined area that possesses a low DT flow.
  • the present invention comprises a capacitor structure having a high surface area within a confined area that possesses a low DT flow and a method to fabricate same, which will become apparent to those skilled in the art from the following disclosure.
  • Exemplary embodiments of the present invention include a capacitor container structure and a method to fabricate same.
  • a capacitor container structure comprises a semiconductor capacitor structure having sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material.
  • a semiconductor capacitor structure is fabricated by forming a base of metal silicide material along the sidewalls of an insulative material having an opening therein, forming sidewalls of conductive hemispherical grained material on the metal silicide material, and forming a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material.
  • FIG. 1 is a cross-sectional view of a partial memory cell, formed on a semiconductor substrate, comprising access transistors covered with a patterned insulation material in preparation to the formation of an exemplary container shaped capacitor structure.
  • FIG. 2 is a subsequent cross-sectional view taken from FIG. 1 following the formation of a titanium layer.
  • FIG. 3 is a subsequent cross-sectional view taken from FIG. 2 following the formation of HemiSpherical Grain (HSG) silicon over the titanium (Ti) layer.
  • HSG HemiSpherical Grain
  • FIG. 4 is a subsequent cross-sectional view taken from FIG. 3 after the formation of a titanium nitride (TiN) layer, followed by a Chemical Mechanical Planarization (CMP) step.
  • TiN titanium nitride
  • CMP Chemical Mechanical Planarization
  • FIG. 5 is a subsequent cross-sectional view taken from FIG. 4 after the silicidation of the HSG silicon overlying the titanium layer, followed by the deposition of a capacitor dielectric layer and a capacitor upper electrode.
  • An exemplary implementation of the present invention is directed to a unique capacitor structure for use in semiconductor devices and a process to fabricated same, as depicted in FIG. 1-5 .
  • the following exemplary implementation is in reference to a capacitor structure and the fabrication thereof in a semiconductor assembly. While the concepts of the present invention are conducive to the fabrication of a storage capacitor for a Dynamic Random Access Memory (DRAM) device, the concepts taught herein may be applied to other semiconductor devices that would likewise benefit from the use of the capacitor structure and process disclosed herein. Therefore, the depictions of the present invention in reference to a DRAM storage capacitor and the manufacture thereof are not meant to so limit the scope of the invention and the extent to which one skilled in the art might apply the concepts taught hereinafter.
  • DRAM Dynamic Random Access Memory
  • access transistors have been formed on substrate 10 , such as a silicon substrate, by methods know to those skilled in the art.
  • the access transistors comprise source/drain regions 11 bridged by transistor gates 13 which overlie transistor gate oxide 12 .
  • a conductive plug 14 such as a tungsten plug or polysilicon plug, has also been fabricated to so that it makes physical contact between source/drain region 11 and a subsequently formed capacitor plate, in this example a storage capacitor plate.
  • insulative material 15 is formed and patterned to provide opening 16 , which will be used to support the fabrication of the capacitor storage plate.
  • a directional titanium layer 20 is formed on the substantially planar surface of insulative material 15 and on the surface of conductive plug 14 , while a minimal amount of titanium is formed on the substantially vertical sidewalls of opening 16 .
  • Titanium layer 20 is formed by such techniques as Chemical Vapor Deposition (CVD) or by Ionized Metal Plasma (IMP).
  • titanium is preferred, other metals that will react with silicon to form a conductive silicide, such as cobalt, tungsten, nickel and the like, may be substituted for titanium layer 20 .
  • nickel may be selectively deposited on the top of conductive plug 14 (such as a tungsten or polysilicon plug) by an electroplating technique as known to those skilled in the art. Regardless of the metal that is selected, it is desirable that only minimal metal be deposited on the vertical sidewalls of opening 16 to avoid loss of the eventual container capacitor's surface roughness.
  • a HemiSpherical Grain (HSG) polysilicon layer 30 is formed on the surface of titanium layer 20 using methods, such as a standard furnace HSG process or a selective HSG process, known to those skilled in the art.
  • HSG HemiSpherical Grain
  • TiN conformal titanium nitride
  • Other conducting films, such as tantalum nitride (TaN), tungsten nitride (WN), etc. may also be used in lieu of a TiN layer.
  • an abrasive planarization such as a Chemical Mechanical Planarization (CMP) step is performed to remove the portions of titanium layer 20 , HSG polysilicon layer 30 and TiN layer 31 that overlie the upper surface of insulative material 15 and thus form a planarized container structure.
  • CMP Chemical Mechanical Planarization
  • the CMP step also restores the upper surface of insulative material 15 to a substantially planarized surface.
  • the TiN layer may be deposited after the planarized container structure is formed. In this case the TiN layer would be subjected to a CMP step and thus form an additional conformal TiN portion 32 .
  • the resulting container shaped structure comprising underlying titanium layer 20 , center lying HSG polysilicon layer 30 and overlying TiN layer 31 (and TiN portion 32 if present), is subjected to a temperature in the order of 600° C. to convert the titanium and HSG polysilicon at the bottom of the container structure to titanium silicide (TiSi x ) 40 .
  • NiSi x is a significant feature of the present invention as it provides a low resistance path between TiN layer 31 and conductive plug 14 .
  • substantially conformal capacitor cell dielectric layer 50 is formed over the container structure comprising HSG polysilicon 30 and TiSi x 40 (both of which are covered with TiN layer 31 and TiN portion 32 if present) and over the surface of adjoining insulative material 15 .
  • a top conductive layer 51 is formed on dielectric layer 50 to form a top capacitor electrode.
  • the completed container structure and the fabrication method used therefor may be of various types (i.e., storage capacitors, flash memories, etc.) and may be used in numerous semiconductor applications and particularly in, but not limited to, DRAMS.

Abstract

A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material. The semiconductor capacitor structure is fabricated by forming a base of metal silicide material along the sidewalls of an insulative material having an opening therein, forming sidewalls of conductive hemispherical grained material on the metal silicide material, and forming a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material.

Description

  • This application is a divisional to U.S. patent application Ser. No. 10/949,066, filed Sep. 24, 2004, which is a divisional to U.S. patent application Ser. No. 10/232,976, filed Aug. 29, 2002.
    • FIELD OF THE INVENTION
  • This invention relates to a semiconductor device and fabrication thereof and, more particularly, to a semiconductor capacitor structure and fabrication thereof.
    • BACKGROUND OF THE INVENTION
  • During semiconductor fabrication of memory devices, to save space, the capacitor of a storage cell must reduce in size and yet maintain adequate capacitance to retain a sufficient charge, such as during Dynamic Random Access Memory (DRAM) operation. There are several approaches to the capacitor design, for example trench capacitors formed in the substrate of a wafer or a stacked capacitor formed above the wafer substrate, to name two.
  • Regardless of the design chosen, the size of the capacitor must be reduced and yet maintain sufficient capacitance as mentioned previously. Two of the main contributors to capacitance are the surface area of the capacitor plates and the dielectric quality of the insulator separating the capacitor plates. Major engineering efforts have gone into improvements in both areas.
  • Once the capacitor design is chosen, another factor should be considered and that is the physical connection between the capacitor plate and the underlying conductor (i.e., a conductive plug between the capacitor plate and a source/drain of an access transistor or the source/drain of the access transistor itself). It is desirable that the physical connection between the capacitor plate and the underlying conductor consist of as low resistance as possible and thus provide for low “time at temperature” (DT) flow during fabrication processing.
  • A significant focus of the present invention is the development of a capacitor having a high surface area within a confined area that possesses a low DT flow. Thus, the present invention comprises a capacitor structure having a high surface area within a confined area that possesses a low DT flow and a method to fabricate same, which will become apparent to those skilled in the art from the following disclosure.
    • SUMMARY OF THE INVENTION
  • Exemplary embodiments of the present invention include a capacitor container structure and a method to fabricate same. A capacitor container structure comprises a semiconductor capacitor structure having sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material.
  • A semiconductor capacitor structure is fabricated by forming a base of metal silicide material along the sidewalls of an insulative material having an opening therein, forming sidewalls of conductive hemispherical grained material on the metal silicide material, and forming a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a cross-sectional view of a partial memory cell, formed on a semiconductor substrate, comprising access transistors covered with a patterned insulation material in preparation to the formation of an exemplary container shaped capacitor structure.
  • FIG. 2 is a subsequent cross-sectional view taken from FIG. 1 following the formation of a titanium layer.
  • FIG. 3 is a subsequent cross-sectional view taken from FIG. 2 following the formation of HemiSpherical Grain (HSG) silicon over the titanium (Ti) layer.
  • FIG. 4 is a subsequent cross-sectional view taken from FIG. 3 after the formation of a titanium nitride (TiN) layer, followed by a Chemical Mechanical Planarization (CMP) step.
  • FIG. 5 is a subsequent cross-sectional view taken from FIG. 4 after the silicidation of the HSG silicon overlying the titanium layer, followed by the deposition of a capacitor dielectric layer and a capacitor upper electrode.
    • DETAILED DESCRIPTION OF THE INVENTION
  • An exemplary implementation of the present invention is directed to a unique capacitor structure for use in semiconductor devices and a process to fabricated same, as depicted in FIG. 1-5.
  • The following exemplary implementation is in reference to a capacitor structure and the fabrication thereof in a semiconductor assembly. While the concepts of the present invention are conducive to the fabrication of a storage capacitor for a Dynamic Random Access Memory (DRAM) device, the concepts taught herein may be applied to other semiconductor devices that would likewise benefit from the use of the capacitor structure and process disclosed herein. Therefore, the depictions of the present invention in reference to a DRAM storage capacitor and the manufacture thereof are not meant to so limit the scope of the invention and the extent to which one skilled in the art might apply the concepts taught hereinafter.
  • Referring to FIG. 1, access transistors have been formed on substrate 10, such as a silicon substrate, by methods know to those skilled in the art. The access transistors comprise source/drain regions 11 bridged by transistor gates 13 which overlie transistor gate oxide 12. A conductive plug 14, such as a tungsten plug or polysilicon plug, has also been fabricated to so that it makes physical contact between source/drain region 11 and a subsequently formed capacitor plate, in this example a storage capacitor plate. Also shown in FIG. 1, insulative material 15 is formed and patterned to provide opening 16, which will be used to support the fabrication of the capacitor storage plate.
  • Referring now to FIG. 2, in a currently preferred embodiment a directional titanium layer 20 is formed on the substantially planar surface of insulative material 15 and on the surface of conductive plug 14, while a minimal amount of titanium is formed on the substantially vertical sidewalls of opening 16. Titanium layer 20 is formed by such techniques as Chemical Vapor Deposition (CVD) or by Ionized Metal Plasma (IMP).
  • Though titanium is preferred, other metals that will react with silicon to form a conductive silicide, such as cobalt, tungsten, nickel and the like, may be substituted for titanium layer 20. For example, nickel may be selectively deposited on the top of conductive plug 14 (such as a tungsten or polysilicon plug) by an electroplating technique as known to those skilled in the art. Regardless of the metal that is selected, it is desirable that only minimal metal be deposited on the vertical sidewalls of opening 16 to avoid loss of the eventual container capacitor's surface roughness.
  • Referring now to FIG. 3, a HemiSpherical Grain (HSG) polysilicon layer 30 is formed on the surface of titanium layer 20 using methods, such as a standard furnace HSG process or a selective HSG process, known to those skilled in the art. Next, conformal titanium nitride (TiN) layer 31 is formed on HSG polysilicon layer 30. Other conducting films, such as tantalum nitride (TaN), tungsten nitride (WN), etc. may also be used in lieu of a TiN layer.
  • Referring now to FIG. 4, an abrasive planarization, such as a Chemical Mechanical Planarization (CMP) step is performed to remove the portions of titanium layer 20, HSG polysilicon layer 30 and TiN layer 31 that overlie the upper surface of insulative material 15 and thus form a planarized container structure. The CMP step also restores the upper surface of insulative material 15 to a substantially planarized surface. Alternately, the TiN layer may be deposited after the planarized container structure is formed. In this case the TiN layer would be subjected to a CMP step and thus form an additional conformal TiN portion 32.
  • After the CMP processing, the resulting container shaped structure, comprising underlying titanium layer 20, center lying HSG polysilicon layer 30 and overlying TiN layer 31 (and TiN portion 32 if present), is subjected to a temperature in the order of 600° C. to convert the titanium and HSG polysilicon at the bottom of the container structure to titanium silicide (TiSix) 40.
  • Alternately if nickel is used for layer 20, temperatures lower than 600° C., for example temperatures in the range of 400° C.-500° C., will successfully cause NiSix formation. The presence of a metal silicide, such as TiSix or NiSix is a significant feature of the present invention as it provides a low resistance path between TiN layer 31 and conductive plug 14.
  • Referring now to FIG. 5, substantially conformal capacitor cell dielectric layer 50 is formed over the container structure comprising HSG polysilicon 30 and TiSix 40 (both of which are covered with TiN layer 31 and TiN portion 32 if present) and over the surface of adjoining insulative material 15. Next, a top conductive layer 51 is formed on dielectric layer 50 to form a top capacitor electrode.
  • Fabrication methods known to those skilled in the art are then used to complete the processing of the memory device. The completed container structure and the fabrication method used therefor may be of various types (i.e., storage capacitors, flash memories, etc.) and may be used in numerous semiconductor applications and particularly in, but not limited to, DRAMS.
  • It is to be understood that, although the present invention has been described with reference to a preferred embodiment, various modifications, known to those skilled in the art, may be made to the disclosed structure and process herein without departing from the invention as recited in the several claims appended hereto.

Claims (10)

1. A method to form a capacitor structure for a semiconductor device comprising the steps of:
forming a metal material on the base of an opening in an insulative material;
forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
converting said metal material and said conductive hemispherical grained polysilicon at the bottom of the container structure to metal silicide;
forming a metal nitride material overlying said conductive hemispherical grained material and said metal silicide material to form a first capacitor plate comprising said metal silicide and said metal nitride material;
forming a capacitor dielectric overlying said metal nitride material; and
forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.
2. The method of claim 1, wherein said step of converting comprises subjecting titanium material and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.
3. The method of claim 1, wherein said step of converting comprises subjecting a nickel material and said conductive hemispherical grained polysilicon to a temperature of approximately 400° C. to 500° C.
4. The method of claim 1, wherein said step of forming a metal material comprises forming a metal selected from a group consisting of cobalt, tungsten, nickel and titanium.
5. The method of claim 1, wherein said step of forming a metal nitride material comprises forming a material selected from the group consisting of titanium nitride, tantalum nitride and tungsten nitride.
6. A method to form a semiconductor device having a capacitor structure comprising the steps of:
forming a metal material on the base of an opening in an insulative material;
forming conductive hemispherical grained polysilicon on said base and on sidewalls of said insulative material defining said opening;
converting said metal material and said conductive hemispherical grained polysilicon at the bottom of the container structure to metal silicide;
forming a metal nitride material overlying said conductive hemispherical grained material and said metal silicide material to form a first capacitor plate comprising said metal silicide and said metal nitride material;
forming a capacitor dielectric overlying said metal nitride material; and
forming a conductive material overlying said capacitor dielectric to form a second capacitor plate.
7. The method of claim 6, wherein said step of converting comprises subjecting titanium material and said conductive hemispherical grained polysilicon to a temperature of approximately 600° C.
8. The method of claim 6, wherein said step of converting comprises subjecting a nickel material and said conductive hemispherical grained polysilicon to a temperature of approximately 400° C. to 500° C.
9. The method of claim 6, wherein said step of forming a metal material comprises forming a metal selected from a group consisting of cobalt, tungsten, nickel and titanium.
10. The method of claim 6, wherein said step of forming a metal nitride material comprises forming a material selected from the group consisting of titanium nitride, tantalum nitride and tungsten nitride.
US11/495,442 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same Abandoned US20060263999A1 (en)

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US10/232,976 US6815753B2 (en) 2002-08-29 2002-08-29 Semiconductor capacitor structure and method to form same
US10/949,066 US20050037570A1 (en) 2002-08-29 2004-09-24 Semiconductor capacitor structure and method to form same
US11/495,442 US20060263999A1 (en) 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same

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US11/495,435 Expired - Fee Related US7413948B2 (en) 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same
US11/495,433 Expired - Fee Related US7851301B2 (en) 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same
US11/495,441 Expired - Fee Related US7531421B2 (en) 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same
US11/495,655 Expired - Fee Related US7696042B2 (en) 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same
US11/495,434 Abandoned US20060263996A1 (en) 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same
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US11/495,435 Expired - Fee Related US7413948B2 (en) 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same
US11/495,433 Expired - Fee Related US7851301B2 (en) 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same
US11/495,441 Expired - Fee Related US7531421B2 (en) 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same
US11/495,655 Expired - Fee Related US7696042B2 (en) 2002-08-29 2006-07-28 Semiconductor capacitor structure and method to form same
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FR2871935A1 (en) * 2004-06-18 2005-12-23 St Microelectronics Crolles 2 INTEGRATED CIRCUIT COMPRISING A METAL ELECRODES CAPACITOR AND METHOD OF MANUFACTURING SUCH CAPACITOR
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US7413948B2 (en) 2008-08-19
US20060263997A1 (en) 2006-11-23
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US7696042B2 (en) 2010-04-13
US20060263998A1 (en) 2006-11-23

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