US20060081992A1 - Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereof - Google Patents
Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereof Download PDFInfo
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- US20060081992A1 US20060081992A1 US11/291,994 US29199405A US2006081992A1 US 20060081992 A1 US20060081992 A1 US 20060081992A1 US 29199405 A US29199405 A US 29199405A US 2006081992 A1 US2006081992 A1 US 2006081992A1
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- film
- silicon nitride
- nitride film
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 166
- 239000002184 metal Substances 0.000 title claims abstract description 166
- 239000004065 semiconductor Substances 0.000 title claims abstract description 149
- 239000005368 silicate glass Substances 0.000 title claims abstract description 54
- 150000004760 silicates Chemical class 0.000 title claims abstract description 54
- 239000011229 interlayer Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 154
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 154
- 239000010410 layer Substances 0.000 claims abstract description 119
- 239000012790 adhesive layer Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 230000001681 protective effect Effects 0.000 claims abstract description 30
- 238000009413 insulation Methods 0.000 claims abstract description 29
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 296
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 29
- 238000004299 exfoliation Methods 0.000 description 29
- 229910052731 fluorine Inorganic materials 0.000 description 29
- 239000011737 fluorine Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 29
- 239000000126 substance Substances 0.000 description 28
- 230000015572 biosynthetic process Effects 0.000 description 19
- 230000008961 swelling Effects 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 229960002050 hydrofluoric acid Drugs 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a semiconductor device using a fluorinated silicate glass film as an interlayer metal dielectric film, and relates to a method of manufacturing a semiconductor device. More particularly, the present invention relates to an improvement in the adhesion between the fluorinated silicate glass film and a silicon nitride film serving as a protective insulation film.
- a fluorinated silicate glass film (hereinafter simply called “FSG”) is used as an electrical insulation layer (hereinafter called an interlayer metal dielectric film (IMD)) to be interposed between the plurality of metal wire layers.
- FSG fluorinated silicate glass film
- IMD interlayer metal dielectric film
- FIGS. 5A and 5B are cross-sectional views for describing a conventional semiconductor device.
- reference numerals 21 and 22 designate metal wire layers; 3 designates FSG serving as an interlayer metal dielectric film formed between the metal wire layers 21 and 22 ; and 5 designates a silicon nitride film which serves as a protective insulation film (also called a “passivation film”) and is to be laid on the highest layer of the semiconductor device.
- the FSG serving as the interlayer metal dielectric film 3 emits free fluorine (not shown).
- the thus-emitted free fluorine diffuses outward, thus forming fluorine substances.
- fluorine substances used herein designates fluorine itself, contamination precursor components, and fluorine-containing contamination compounds spontaneously generated from the precursor components.
- the fluorine substances are accumulated along a boundary surface between the FSG 3 and the silicon nitride film (serving as the protective insulation film) 5 .
- the silicon nitride film 5 has a strong blocking effect against the fluorine substances, thus preventing diffusion of the fluorine substances. Accordingly, the fluorine substances are accumulated at high concentration along a boundary surface between the FSG 3 and the silicon nitride film 5 .
- the fluorine substances are concentrated along the boundary surface of the FSG 3 and the silicon nitride film 5 . Therefore, the silicon nitride film 5 is prone to be exfoliated.
- the present invention has been conceived to solve the previously-mentioned problems and a general object of the present invention is to provide a novel and useful semiconductor device, and to provide a novel and useful method of manufacturing a semiconductor device.
- a more specific object of the present invention is to improve adhesion between an interlayer metal dielectric film and a protective insulation film.
- a more specific another object of the present invention is to prevent exfoliation of a protective insulation film from the vicinity of outer periphery of a semiconductor substrate.
- the semiconductor device comprises a semiconductor substrate; a plurality of metal wire layers formed on the semiconductor substrate; a plurality of fluorinated silicate glass films formed respectively between the plurality of metal wire layers, and the plurality of fluorinated silicate glass films acting as interlayer metal dielectric film; a silicon nitride film formed on the highest fluorinated silicate glass film, and the silicon nitride film acting as a protective insulation film; and an adhesive layer formed between the highest fluorinated silicate glass film and the silicon nitride film.
- the adhesive layer is formed between the highest fluorinated silicate glass film and the silicon nitride film, adhesion between the fluorinated silicate glass film and the silicon nitride film can be improved. Accordingly, swelling or exfoliation of the silicon nitride film can be prevented, which in turn improves the reliability of the semiconductor device.
- the semiconductor device comprises a semiconductor substrate; a plurality of metal wire layers formed on the semiconductor substrate; a plurality of fluorinated silicate glass film formed between the plurality of metal wire layers, and the plurality of fluorinated silicate glass films acting as an interlayer metal dielectric film; and a silicon nitride film which is integrally formed on the sides of the highest fluorinated silicate glass film, on the highest fluorinated silicate glass film, and on the highest metal wire layer, and on the silicon nitride film acting as a protective insulation film.
- the silicon nitride film is formed on the sides of the fluorinated silicate glass film as well, exfoliation of the silicon nitride film can be prevented from the edge of the fluorinated silicate glass film.
- a first metal wire layer is formed on a semiconductor substrate in a first metal wire layer formation step.
- a fluorinated silicate glass film serving as an interlayer metal dielectric film is formed on the first metal wire layer in an interlayer metal dielectric film formation step.
- a second metal wire layer is formed on the fluorinated silicate glass film in a second metal wire layer formation step.
- an adhesive layer is formed on the fluorinated silicate glass film and on the second metal wire layer in an adhesive layer formation step.
- a silicon nitride film serving as a protective insulation film is formed on the adhesive layer in a protective insulation film formation step.
- the adhesive layer is formed between the fluorinated silicate glass film and the silicon nitride film, swelling or exfoliation of the silicon nitride film can be prevented.
- FIG. 1 is a cross-sectional view for describing a semiconductor device and a method of manufacturing a semiconductor device, according to a first embodiment of the present invention:
- FIGS. 2A through 2D are cross-sectional views for describing a semiconductor device and a method of manufacturing the semiconductor device, according to a second embodiment of the present invention.
- FIGS. 3A through 3C are cross-sectional views for describing a semiconductor device and a method of manufacturing a semiconductor device, according to a third embodiment of the present invention.
- FIG. 4A is a plan view describing a semiconductor device, according to a forth embodiment of the present invention.
- FIG. 4B is a cross-sectional view describing a semiconductor device taken along line AA′ shown in FIG. 4A , according to a forth embodiment of the present invention.
- FIGS. 5A and 5B are cross-sectional views for describing a conventional semiconductor device.
- FIG. 1 is across-sectional view describing a semiconductor device and a method of manufacturing a semiconductor device, according to a first embodiment of the present invention.
- reference numeral 21 designates a first metal wire layer
- 22 designates a second metal wire layer
- 3 designate a fluorinated silicate glass film (hereinafter simply called “FSG”) serving as an interlayer metal dielectric film
- 4 designates an adhesive layer (which will be described later)
- 5 designates a silicon nitride film (e.g. P-SiN film) serving as a protective insulation film (also called a “passivation film”).
- FSG fluorinated silicate glass film
- a semiconductor device comprises a semiconductor substrate (not shown), and a multilayer interconnection.
- the multilayer interconnection comprises a plurality of metal wire layers.
- the plurality of metal wire layers consists of a first metal wire layer 21 and a second metal wire layer 22 .
- FSG 3 is formed between the first metal wire layer 21 and the second metal wire layer 22 .
- An adhesive layer 4 is formed on the second metal wire layer 22 and the FSG 3 .
- the second metal wire layer 22 is the highest metal wire layer on the semiconductor substrate
- the FSG 3 is the highest FSG on the semiconductor substrate.
- a silicon nitride film 5 is formed on the adhesive layer 4 .
- the adhesive layer 4 is formed between the highest FSG 3 and the silicon nitride film 5 .
- the adhesive layer 4 has the property of diffusing fluorine substances therein.
- the fluorine substances designate fluorine itself, contamination precursor components, and fluorine-containing contamination compounds spontaneously generated from the precursor components.
- the adhesive layer 4 be formed on the highest FSG 3 , and there is no necessity of the adhesive layer 4 being formed on the second metal wire layer 22 .
- any one of the following three thin films (1) to (3) is used as the adhesive layer 4 .
- a first specific example of the adhesive layer 4 is a P-SiO film or a P-SiON film formed by means of the diode parallel plate plasma enhanced CVD method, which will be described later.
- the P-SiO film or the P-SiON film has a thickness of 10 to 1000 nm and typically has a thickness of 10 to 300 nm.
- the P-SiO film or P-SiON film may be formed not through use of the diode parallel plate plasma enhanced CVD method, but through use of the high-density plasma (HDP) CVD method.
- HDP high-density plasma
- a second specific example of the adhesive layer 4 is a PE-SiO film formed by means of the plasma acceleration CVD method, which will be described later.
- the PE-SiO film has a thickness of 50 to 2000 nm and typically has a thickness of 100 to 300 nm.
- a third specific example of the adhesive layer 4 is a SiO film or a SiON film formed by means of a CVD method (for example, the low-pressure CVD technique or the atmospheric-pressure CVD technique) other than the plasma acceleration CVD method.
- a CVD method for example, the low-pressure CVD technique or the atmospheric-pressure CVD technique
- the adhesive layer 4 consisting of, for example, a P-SiO film or a P-SiON film is formed between the FSG 3 serving as the highest interlayer metal dielectric film and the silicon nitride film 5 serving as the protective insulation film.
- the adhesive layer 4 causes the fluorine substances emitted froth the FSG 3 to diffuse into the adhesive layer 4 , thereby preventing concentration of the fluorine substances along the boundary surface between the FSG 3 and the silicon nitride film 5 .
- the PE-SiO film being used as the adhesive layer 4 , there can be attained superior step coverage, in addition to the previously-described effect. Accordingly, the step coverage of the silicon nitride film 5 formed on the adhesive layer (PE-SiO film) 4 can be improved. Therefore, there can be provided a semiconductor device having high moisture resistance, thus improving the reliability of the semiconductor device to a much greater extent.
- At least one of the upper surface of the FSG 3 and the upper surface of the adhesive layer 4 is subjected to interfacial treatment (which will be described later), to thereby produce an interfacially-treated layer.
- interfacial treatment which will be described later
- adhesion between the FSG 3 and the silicon nitride film 5 can be improved further.
- a first metal wire layer 21 for example aluminum (Al), copper (Cu), or their alloys, is formed on a semiconductor substrate (not shown).
- an interlayer metal dielectric film 3 for example FSG, is formed on the first metal wire layer 21 .
- a second metal wire layer 22 for example aluminum (Al), copper (Cu), or their alloys, is formed on the FSG 3 .
- an adhesive layer 4 for example a P-SiO film, a P-SiON film, or a PE-SiO film (which will be described later), is formed on the FSG 3 and the second metal wire layer 22 .
- a protective insulation film 5 for example a silicon nitride film, is formed on the adhesive layer 4 by means of the CVD method.
- the adhesive layer 4 corresponds to a P-SiON film or P-SiO film formed according to the following [Film Formation Condition 1] through use of the diode parallel plate plasma enhanced CVD method, or corresponds to a PE-SiO film formed according to the following [Film Formation Condition 2] through use of the plasma acceleration CVD method.
- the adhesive layer 4 may be formed not through use of the diode parallel plate plasma enhanced CVD method, but through use of the HDP CVD method.
- the adhesive layer 4 for example a SiON film or a SiO film, maybe formed through use of another CVD method (e.g., the atmospheric pressure CVD method or the low pressure CVD method).
- RF Power hundreds of watts [e.g., RF(13.56 MHz): 250W, LF(350 to 450 kHz): 250 W]
- RF Power hundreds of watts [e.g., RF(13.56 MHz): 300W, LF(350 to 450 kHz): 300 W]
- the FSG 3 is formed on the first metal wire layer 21 , and the second metal wire layer 22 is formed on the FSG 3 .
- the adhesive layer 4 is formed on the FSG 3 and the second metal wire layer 22 , and the silicon nitride film 5 is formed on the adhesive layer 4 .
- the adhesive layer 4 is formed between the FSG 3 and the silicon nitride film 5 . Since, the fluorine substances emitted from the FSG 3 are diffused into the adhesive layer 4 , concentration of the fluorine substances along the boundary surface between the FSG 3 and the silicon nitride film 5 can be prevented.
- individual film i.e. the surface of the FSG 3 or the surface of the adhesive layer 4
- interfacial treatment by means of plasma processing under, for example the following [interfacial treatment condition].
- the gas used in plasma processing is not limited to 02 and may be Ar, N 2 , NH 3 , or a mixture thereof.
- the hydrofluoric-acid treatment is interfacial treatment of immersing a wafer (corresponding to the semiconductor substrate) in a chemical solution stored in a chemical bath disposed at a draft, to thereby slightly etch the surface of the wafer (by a thickness of, for example, tens of angstroms to hundreds of angstroms) by means of wet etching.
- Dilute hydrofluoric acid is used as the chemical solution.
- a typical example of dilute hydrofluoric acid is a 1:100 hydrofluoric acid solution.
- Treatment time ranges from 1 to 60 seconds, and a typical treatment time is several seconds.
- FIGS. 2A through 2D are cross-sectional views for describing a semiconductor device and a method of manufacturing a semiconductor device, according to a second embodiment of the present invention.
- FIGS. 2A through 2D are cross-sectional views for describing a semiconductor device having the highest metal wire layer formed by means of the Damascene method, and for describing a method of manufacturing a semiconductor device including a step of forming the highest metal wire layer by means of the Damascene method.
- reference numeral 2 designates the highest metal wire layer of a plurality of metal wire layers, which are formed on a semiconductor substrate (not shown); 3 designates a FSG (fluorinated silicate glass film) serving as the highest interlayer metal dielectric film; 4 designates an adhesive layer; and 5 designates a silicon nitride film serving as a protective insulation film.
- FSG fluorinated silicate glass film
- the adhesive layer 4 is formed between the highest FSG 3 and the silicon nitride film 5 formed on the FSG 3 .
- the adhesive layer 4 is formed on the FSG 3 and the metal wire layer 2 .
- the adhesive layer 4 be formed on at least the FSG 3 .
- the adhesive layer 4 is formed between the FSG 3 and the silicon nitride film 5 formed on the FSG 3 .
- the two adhesive layers 41 and 42 are formed between the FSG 3 and the silicon nitride film 5 formed on the FSG 3 .
- the adhesive layer 4 is formed between the FSG 3 and the silicon nitride film 5 consisting of the first and second silicon nitride films 51 and 52 .
- the adhesive layer 4 is formed between the FSG 3 serving as the highest interlayer metal dielectric film and the silicon nitride film 5 serving as the protective insulation film.
- the adhesive layer 4 causes the fluoride substances emitted from the FSG 3 to diffuse into the adhesive layer 4 . Therefore, concentration of the fluoride substances along the boundary surface between the FSG 3 and the silicon nitride film 5 can be prevented.
- adhesion between the FSG 3 and the silicon nitride film 5 can be improved, and swelling or exfoliation of the silicon nitride film 5 can be prevented. Therefore, the reliability of the semiconductor device can be improved.
- At least one of the FSG 3 or the adhesive layer 4 is subjected to interfacial treatment (see the first embodiment), wherewith an interfacially-treated surface is produced.
- interfacial treatment see the first embodiment
- a FSG 3 serving as the highest interlayer metal dielectric film is formed on a semiconductor substrate (not shown).
- the metal wire layer 2 is formed in the FSG 3 by means of the Damascene method.
- the adhesive layer 4 is formed on the FSG 3 and the metal wire layer 2 .
- the silicon nitride film 5 serving as a protective insulation film is formed on the adhesive layer 4 .
- the adhesive layer 4 be formed on at least the FSG 3 , and the adhesive layer 4 is not necessarily formed on the metal wire layer 2 .
- a FSG 3 serving as the highest interlayer metal dielectric film is formed on a semiconductor substrate (not shown).
- an adhesive layer 4 is formed on the FSG 3 .
- a metal wire layer 2 is formed in the adhesive layer 4 by means of the Damascene method.
- a silicon nitride film 5 serving as a protective insulation film is formed on the metal wire layer 2 and the adhesive layer 4 .
- a FSG 3 serving as the highest interlayer metal dielectric film is formed on a -Semiconductor substrate (not shown).
- a first adhesive layer 41 is formed on the FSG 3 .
- a highest metal wire layer 2 is formed in the first adhesive layer 41 . Further, a second adhesive layer 42 is formed on the metal wire layer 2 and the first adhesive layer 41 .
- a silicon nitride film 5 serving as a protective insulation film is formed on the second adhesive layer 42 .
- a FSG 3 serving as the highest interlayer metal dielectric film is formed on a semiconductor substrate (not shown).
- a first adhesive layer 4 is formed on the FSG 3 .
- a first silicon nitride film 51 serving as a first protective insulation film is formed on the first adhesive layer 41 . Further, a highest metal wire layer 2 is formed in the first silicon nitride film 51 and the adhesive layer 4 by means of the Damascene method.
- a second silicon nitride film 52 serving as a second protective insulation film is formed on the first silicon nitride film 51 and the metal wire layer 2 .
- the highest metal wire layer 2 is formed by means of the Damascene method, and the adhesive layer 4 is formed between the highest FSG 3 and the silicon nitride film 5 .
- the fluorine substances emitted from the FSG 3 diffuse into the adhesive layer 4 .
- concentration of the fluorine substances along the boundary surface between the FSG 3 and the silicon nitride film 5 can be prevented.
- adhesion between the FSG 3 and the silicon nitride film 5 can be improved, and swelling or exfoliation of the silicon nitride film 5 can be prevented.
- the reliability of the semiconductor device can be improved.
- individual film i.e. the surface of the FSG 3 or the surface of the adhesive layer 4
- interfacial treatment see the first embodiment
- FIGS. 3A through 3C are cross-sectional views for describing a semiconductor device and a method of manufacturing a semiconductor device, according to a third embodiment of the present invention.
- a semiconductor device is described by reference to FIGS. 3B and 3C , and a method of manufacturing a semiconductor device is described by reference to FIGS. 3A through 3C .
- a plurality of metal wire layers consisting of the first metal wire layer 21 and the second metal wire layer 22 are formed on the semiconductor substrate 1 .
- the first FSG 31 is formed between the first metal wire layer 21 and the semiconductor substrate 1
- the second FSG 32 is formed between the first metal wire layer 21 and the second metal wire layer 22 .
- the silicon nitride film 5 is integrally formed on the upper surface of the highest (second) FSG 32 , the highest (second) metal wire layer 22 , and the side surfaces of the FSG 32 .
- a semiconductor device shown in FIG. 3C is analogous in structure to that shown in FIG. 3B .
- the semiconductor devices differ from each other in that in the semiconductor device shown in FIG. 3C the silicon nitride film 5 is further formed on the side surfaces of the first FSG 31 and on areas of the semiconductor substrate 1 around the FSG 31 .
- the silicon nitride film 5 is integrally formed on the upper surface of the highest (second) FSG 32 , the second metal wire layer 22 , the side surfaces of the FSG 32 and 31 , and on areas of the semiconductor substrate 1 around the FSG 31 .
- adhesion between the silicon nitride film 5 and the semiconductor substrate is stronger than adhesion between the silicon nitride film 5 and the FSG 32 .
- the silicon nitride film 5 serving as a protective dielectric film is formed so as to integrally cover the highest (second) FSG 32 , the second metal wire layer 22 , and the side surfaces of the FSG 32 .
- the silicon nitride film 5 is further formed on the side surfaces of the first FSG 31 and on areas of the semiconductor substrate 1 around the FSG 31 and 32 . As a result, exfoliation of the silicon nitride film 5 around the outer periphery of the semiconductor substrate 1 can be prevented further effectively. Accordingly, the reliability of the semiconductor device can be improved further.
- an adhesive layer (see the first adhesive layer 4 described in connection with the first embodiment) may be formed between the highest FSG 32 and the silicon nitride film 5 .
- fluorine substances emitted from the highest FSG 32 diffuse into the adhesive layer. Accordingly, concentration of the fluorine substances along the boundary surface between the highest FSG 32 and the silicon nitride film 5 can be diminished, thus preventing swelling or exfoliation of the silicon nitride film 5 .
- the reliability of a semiconductor device can be improved further.
- At least one of the upper surface of the FSG 32 and the upper surface of an adhesive layer is subjected to interfacial treatment (see the first embodiment), thereby producing an interfacially-treated surface. Therefore, adhesion between the highest FSG 32 and the silicon nitride film 5 can be improved further.
- a first FSG 31 serving as a first interlayer metal dielectric film is formed on a semiconductor substrate 1 .
- a first metal wire layer 21 is formed on the first FSG 31 .
- a second FSG 32 serving as a second interlayer metal dielectric film is formed on the FSG 31 and the first metal wire layer 21 . Further, a second metal wire layer 22 is formed on the second FSG 32 .
- the thus-formed second FSG 32 is eliminated within a range 10 from the outer periphery of the semiconductor substrate 1 . More specifically, the side surfaces of the second FSG 32 located in the vicinity of the outer periphery of the semiconductor substrate 1 are eliminated.
- a silicon nitride film 5 serving as a protective insulation film is formed so as to integrally cover the side surfaces of the second FSG 32 , the second FSG 32 , and the second metal wire layer 22 .
- the first FSG 31 formed within a predetermined range 10 may be further removed, as shown in FIG. 3C .
- the silicon nitride film 5 serving as a protective insulation film is formed so as to integrally cover the portions of the semiconductor substrate 1 exposed as a result of removal of the first FSG 31 , the side surfaces of the FSG 31 and 32 , the second FSG 32 , and the second metal wire layer 22 .
- the side surfaces of the second FSG 32 are removed.
- the silicon nitride film 5 serving as a protective insulation film is formed so as to integrally cover the top and side surfaces of the second FSG 32 , which surfaces are exposed as a result of removal of the second FSG 32 , and the second metal wire layer 22 .
- the side surfaces of the first FSG 31 and the second FSG 32 are removed, to thereby cause the surface of the semiconductor substrate 1 to become exposed.
- the silicon nitride film 5 serving as a protective insulation film is formed so as to integrally cover the portions of the semiconductor substrate 1 exposed as a result of removal of the first and second FSG 31 and 32 ; the side surfaces of the FSG 31 and 32 , the second FSG 32 ; and the second metal wire layer 22 . Therefore, adhesion of the silicon nitride film 5 in the vicinity of the outer periphery of the semiconductor substrate 1 can be improved further.
- an adhesive layer maybe formed on the second FSG 32 , and the silicon nitride film 5 may be formed on the thus-formed adhesive layer.
- the adhesive layer causes the fluorine substances emitted from the second FSG 32 to diffuse into the adhesive layer.
- concentration of the fluorine substances along the boundary surface between the second FSG 32 and the silicon nitride film 5 can be prevented. Therefore, adhesion between the second FSG 32 and the silicon nitride film 5 can be improved further, thereby improving the reliability of the semiconductor device.
- FIGS. 4A and 4B are views for describing a semiconductor device and a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention. More specifically, FIG. 4A is a plan view describing for a semiconductor device, and FIG. 4B is a cross-sectional view for describing the semiconductor device taken along line AA′ shown in FIG. 4A .
- reference numeral 1 designates a semiconductor substrate
- 11 designates a chip region of the semiconductor substrate 1
- 12 designates a non-chip region.
- the non-chip region 12 is an area in the vicinity of the outer periphery of the semiconductor substrate 1 , where semiconductor devices (chips) cannot be formed by means of dicing.
- a plurality of metal wire layers consisting of the first metal wire layer 21 and the second metal wire layer 22 are formed within a chip region 11 on the semiconductor substrate 1 .
- the first metal film 210 is formed on the entire non-chip region 12 in the vicinity of the outer periphery of the semiconductor substrate 1 , and the thus-formed first metal film 210 is flush with the first metal wire layer 21 .
- the second metal film 220 is formed on the entire non-chip region 12 , and the thus-formed second metal film 220 is flush with the second metal wire layer 22 .
- the first FSG 31 is formed between the semiconductor substrate 1 and the first metal wire layer 21
- the second FSG 32 is formed between the first metal wire layer 21 and the second metal wire layer 22 .
- the second metal film 220 is superior to the second FSG 32 in terms of adhesion to the silicon nitride film 5 .
- the silicon nitride film 5 is formed on the highest metal film 220 , the highest metal wire layer 22 , and the highest FSG 32 layer.
- the metal film 220 which is flush with the highest metal wire layer 22 , is formed on the entire non-chip region 12 .
- adhesion between the silicon nitride film 5 and the second metal film 220 can be improved, thereby preventing exfoliation of the silicon nitride film 5 from the vicinity of the outer periphery of the semiconductor substrate 1 and improving the reliability of the semiconductor device.
- An adhesive layer (see the first adhesive layer 4 of the present embodiment) may be formed between the highest (second) FSG 32 and the silicon nitride film 5 .
- the fluorine substances emitted from the second FSG 32 are diffused into the adhesive layer. Therefore, concentration of the fluorine substances along the boundary surface between the second FSG 32 and the silicon nitride film 5 can be prevented. Consequently, swelling or exfoliation of the silicon nitride film 5 can be prevented, thereby improving the reliability of the semiconductor device.
- At least one of the upper surface of the FSG 32 and the upper surface of the adhesive layer are subjected to interfacial treatment, thereby producing an interfacially-treated surface (see the first embodiment). Therefore, adhesion between the highest FSG 32 and the silicon nitride film 5 can be improved further.
- a first FSG 31 is formed on a semiconductor substrate 1 .
- a first metal wire layer 21 is formed in a chip region 11 on the first FSG 31 , and the first metal film 210 is formed on a entire non-chip region 12 .
- the first metal wire layer 21 is flush with the first metal film 210 .
- a second FSG 32 is formed on the first metal wire layer 21 . Further, a second metal wire layer 22 is formed in the chip region 11 on the second FSG 32 , and a second metal film 220 is formed on the entire surface of the non-chip region 12 . Here, the second metal wire layer 22 is flush with the second metal film 220 .
- a silicon nitride film 5 is formed on the second FSG 32 , the second metal film 220 , and the second metal wire layer 22 .
- the second metal wire layer 22 serving as the highest metal wire layer is formed on the chip region 11 of the second FSG 32 .
- the second metal film 220 is formed on the entire surface of the non-chip region 12 .
- the silicon nitride film 5 is formed on the second FSG 32 , the second metal film 220 , and the second metal wire layer 22 .
- Adhesion between the metal film 220 formed on the entire non-chip region 12 of the semiconductor substrate 1 and the silicon nitride film 5 is stronger than adhesion existing between the FSG 32 and the silicon nitride film 5 . Accordingly, exfoliation of the silicon nitride film 5 from the vicinity of the outer periphery of the semiconductor substrate 1 can be prevented, thus improving the reliability of the semiconductor device.
- an adhesive layer may be formed on the second FSG 32 .
- the silicon nitride film 5 may be formed on the adhesive layer.
- the adhesive layer causes the fluorine substances emitted from the second FSG 32 to diffuse into the adhesive layer, thereby preventing concentration of the fluorine substances along the boundary surface between the second FSG 32 and the silicon nitride film 5 . Consequently, adhesion between the second FSG 32 and the silicon nitride film 5 can be improved, which in turn improves the reliability of the semiconductor device.
- individual films may be subjected to interfacial treatment (see the first embodiment). As a result, adhesion between the highest FSG 32 and the silicon nitride film 5 can be improved further.
- a multilayer film consisting of the metal films 210 and 220 is formed.
- the only requirement is that only the metal film 220 be formed so as to become flush with the highest metal wire layer 22 . Namely, formation of the metal film 210 flush with the lower metal wire layer 21 may be omitted.
- an adhesive layer formed between a fluorinated silicate glass film and a silicon nitride film enhances adhesion between the fluorinated silicate glass film and the silicon nitride film. Accordingly, swelling or exfoliation of the silicon nitride film can be prevented, which in turn improves the reliability of a semiconductor device.
- a silicon nitride film is formed on the sides of a fluorinated silicate glass film as well. Consequently, exfoliation of a silicon nitride film from the edge of the fluorinated silicate glass film can be prevented.
- exfoliation of the silicon nitride film from the vicinity of outer periphery of a semiconductor substrate can be prevented.
- strong adhesion exists between a silicon nitride film and a metal film in the vicinity of the outer periphery of the semiconductor substrate, thereby preventing exfoliation of the silicon nitride film.
- the semiconductor device is further provided with an additional adhesive layer, which further improves adhesion between the fluorinated silicate glass film and the silicon nitride film.
- a P-SiO film or P-SiON film serving as an adhesion layer can be formed between a fluorinated silicate glass film and a silicon nitride film improves adhesion between the fluorinated silicate glass film and the silicon nitride film.
- step coverage of a silicon nitride film is improved by means of taking a PE-SiO film as an adhesive layer, adhesion between the fluorinated silicate glass film and the silicon nitride film can be improved further.
- an adhesive layer is formed between a fluorinated silicate glass film and a silicon nitride film, swelling or exfoliation of the silicon nitride film can be prevented.
- an adhesive layer is formed between a fluorinated silicate glass film and a silicon nitride film, thereby preventing swelling or exfoliation of a silicon nitride film.
- a silicon nitride film is formed on the side surfaces of a second fluorinated silicate glass film as well as on the second fluorinated silicate glass film and the second metal wire layer.
- a silicon nitride film is formed on areas around a fluorinated silicate glass film, side surfaces of the fluorinated silicate glass film, a second fluorinated silicate glass film, and a second metal wire layer, thereby preventing exfoliation of a silicon nitride film from the vicinity of the outer periphery of a semiconductor substrate.
- formation of an additional adhesive layer enhances adhesion between the second fluorinated silicate glass film and the silicon nitride film.
- interfacial treatment of contact surfaces results in an improvement in adhesion.
- the plasma CVD technique can be employed as a method of forming a P-SiO film or P-SiON film as an adhesive layer.
- the plasma acceleration CVD technique can be employed as a method of forming a PE-SiO film as an adhesive layer.
Abstract
A plurality of metal wire layers consisting of a first metal wire layer and a second metal wire layer are formed on a semiconductor substrate. A fluorinated silicate glass film serving as an interlayer metal dielectric film is formed between the first and second metal wire layers. A silicon nitride film serving as a protective insulation film is formed on the fluorinated silicate glass film layer. An adhesive layer made of, for example, a P-SiO film, P-SiON film, or PE-SiO film, is formed between the fluorinated silicate glass film and the silicon nitride film.
Description
- 1. Field of the Invention
- The present invention relates to a semiconductor device using a fluorinated silicate glass film as an interlayer metal dielectric film, and relates to a method of manufacturing a semiconductor device. More particularly, the present invention relates to an improvement in the adhesion between the fluorinated silicate glass film and a silicon nitride film serving as a protective insulation film.
- 2. Description of the Background Art
- In a semiconductor device having a multilayer metal interconnection (a plurality of metal wire layers), a fluorinated silicate glass film (hereinafter simply called “FSG”) is used as an electrical insulation layer (hereinafter called an interlayer metal dielectric film (IMD)) to be interposed between the plurality of metal wire layers.
-
FIGS. 5A and 5B are cross-sectional views for describing a conventional semiconductor device. - In
FIG. 5A ,reference numerals metal wire layers - In the conventional semiconductor device, the FSG serving as the interlayer metal
dielectric film 3 emits free fluorine (not shown). The thus-emitted free fluorine diffuses outward, thus forming fluorine substances. The expression “fluorine substances” used herein designates fluorine itself, contamination precursor components, and fluorine-containing contamination compounds spontaneously generated from the precursor components. - The fluorine substances are accumulated along a boundary surface between the
FSG 3 and the silicon nitride film (serving as the protective insulation film) 5. - The
silicon nitride film 5 has a strong blocking effect against the fluorine substances, thus preventing diffusion of the fluorine substances. Accordingly, the fluorine substances are accumulated at high concentration along a boundary surface between theFSG 3 and thesilicon nitride film 5. - For this reason, there is a chance of swelling or exfoliation of the
silicon nitride film 5 arising. - As shown in
FIG. 5B , even in the vicinity of the outer periphery of asemiconductor substrate 1, the fluorine substances are concentrated along the boundary surface of theFSG 3 and thesilicon nitride film 5. Therefore, thesilicon nitride film 5 is prone to be exfoliated. - As mentioned above, weak adhesion exists between the FSG 3 serving as the interlayer metal dielectric film and the
silicon nitride film 5 serving as the protective insulation film. Therefore, swelling or exfoliation of thesilicon nitride film 5 arises, thereby deteriorating the performance or reliability of the semiconductor device. - The present invention has been conceived to solve the previously-mentioned problems and a general object of the present invention is to provide a novel and useful semiconductor device, and to provide a novel and useful method of manufacturing a semiconductor device.
- A more specific object of the present invention is to improve adhesion between an interlayer metal dielectric film and a protective insulation film.
- A more specific another object of the present invention is to prevent exfoliation of a protective insulation film from the vicinity of outer periphery of a semiconductor substrate.
- The above objects of the present invention are attained by a following semiconductor device, and by a following method of manufacturing a semiconductor device.
- According to one aspect of the present invention, the semiconductor device comprises a semiconductor substrate; a plurality of metal wire layers formed on the semiconductor substrate; a plurality of fluorinated silicate glass films formed respectively between the plurality of metal wire layers, and the plurality of fluorinated silicate glass films acting as interlayer metal dielectric film; a silicon nitride film formed on the highest fluorinated silicate glass film, and the silicon nitride film acting as a protective insulation film; and an adhesive layer formed between the highest fluorinated silicate glass film and the silicon nitride film.
- In the semiconductor device, since the adhesive layer is formed between the highest fluorinated silicate glass film and the silicon nitride film, adhesion between the fluorinated silicate glass film and the silicon nitride film can be improved. Accordingly, swelling or exfoliation of the silicon nitride film can be prevented, which in turn improves the reliability of the semiconductor device.
- According to another aspect of the present invention, the semiconductor device comprises a semiconductor substrate; a plurality of metal wire layers formed on the semiconductor substrate; a plurality of fluorinated silicate glass film formed between the plurality of metal wire layers, and the plurality of fluorinated silicate glass films acting as an interlayer metal dielectric film; and a silicon nitride film which is integrally formed on the sides of the highest fluorinated silicate glass film, on the highest fluorinated silicate glass film, and on the highest metal wire layer, and on the silicon nitride film acting as a protective insulation film.
- In the semiconductor device, since the silicon nitride film is formed on the sides of the fluorinated silicate glass film as well, exfoliation of the silicon nitride film can be prevented from the edge of the fluorinated silicate glass film.
- According to another aspect of the present invention, in a manufacturing method of a semiconductor device, a first metal wire layer is formed on a semiconductor substrate in a first metal wire layer formation step. Next, a fluorinated silicate glass film serving as an interlayer metal dielectric film is formed on the first metal wire layer in an interlayer metal dielectric film formation step. Next, a second metal wire layer is formed on the fluorinated silicate glass film in a second metal wire layer formation step. Next, an adhesive layer is formed on the fluorinated silicate glass film and on the second metal wire layer in an adhesive layer formation step. Next, a silicon nitride film serving as a protective insulation film is formed on the adhesive layer in a protective insulation film formation step.
- In the semiconductor device, since the adhesive layer is formed between the fluorinated silicate glass film and the silicon nitride film, swelling or exfoliation of the silicon nitride film can be prevented.
- Other objects and further features of the present invention will be apparent from the following detailed description when read in conjunction with the accompanying drawings.
-
FIG. 1 is a cross-sectional view for describing a semiconductor device and a method of manufacturing a semiconductor device, according to a first embodiment of the present invention: -
FIGS. 2A through 2D are cross-sectional views for describing a semiconductor device and a method of manufacturing the semiconductor device, according to a second embodiment of the present invention. -
FIGS. 3A through 3C are cross-sectional views for describing a semiconductor device and a method of manufacturing a semiconductor device, according to a third embodiment of the present invention; -
FIG. 4A is a plan view describing a semiconductor device, according to a forth embodiment of the present invention; -
FIG. 4B is a cross-sectional view describing a semiconductor device taken along line AA′ shown inFIG. 4A , according to a forth embodiment of the present invention; and -
FIGS. 5A and 5B are cross-sectional views for describing a conventional semiconductor device. - In the following, principles and embodiments of the present invention will be described with reference to the accompanying drawings. The members and steps that are common to some of the drawings are given the same reference numerals and redundant descriptions therefore may be omitted.
-
FIG. 1 is across-sectional view describing a semiconductor device and a method of manufacturing a semiconductor device, according to a first embodiment of the present invention. - First, the structure of a semiconductor device will now be described.
- In connection with
FIG. 1 ,reference numeral 21 designates a first metal wire layer; 22 designates a second metal wire layer; 3 designate a fluorinated silicate glass film (hereinafter simply called “FSG”) serving as an interlayer metal dielectric film; 4 designates an adhesive layer (which will be described later); and 5 designates a silicon nitride film (e.g. P-SiN film) serving as a protective insulation film (also called a “passivation film”). - As shown in
FIG. 1 , a semiconductor device according to a first embodiment of the present invention comprises a semiconductor substrate (not shown), and a multilayer interconnection. The multilayer interconnection comprises a plurality of metal wire layers. Here, the plurality of metal wire layers consists of a firstmetal wire layer 21 and a secondmetal wire layer 22. FSG 3 is formed between the firstmetal wire layer 21 and the secondmetal wire layer 22. - An
adhesive layer 4 is formed on the secondmetal wire layer 22 and theFSG 3. Here, the secondmetal wire layer 22 is the highest metal wire layer on the semiconductor substrate, and theFSG 3 is the highest FSG on the semiconductor substrate. Asilicon nitride film 5 is formed on theadhesive layer 4. - More specifically, the
adhesive layer 4 is formed between thehighest FSG 3 and thesilicon nitride film 5. - The
adhesive layer 4 has the property of diffusing fluorine substances therein. Here, the fluorine substances designate fluorine itself, contamination precursor components, and fluorine-containing contamination compounds spontaneously generated from the precursor components. - The only requirement is that the
adhesive layer 4 be formed on thehighest FSG 3, and there is no necessity of theadhesive layer 4 being formed on the secondmetal wire layer 22. - Any one of the following three thin films (1) to (3) is used as the
adhesive layer 4. - (1) A first specific example of the
adhesive layer 4 is a P-SiO film or a P-SiON film formed by means of the diode parallel plate plasma enhanced CVD method, which will be described later. Here, the P-SiO film or the P-SiON film has a thickness of 10 to 1000 nm and typically has a thickness of 10 to 300 nm. - The P-SiO film or P-SiON film may be formed not through use of the diode parallel plate plasma enhanced CVD method, but through use of the high-density plasma (HDP) CVD method.
- (2) A second specific example of the
adhesive layer 4 is a PE-SiO film formed by means of the plasma acceleration CVD method, which will be described later. Here, the PE-SiO film has a thickness of 50 to 2000 nm and typically has a thickness of 100 to 300 nm. - (3) A third specific example of the
adhesive layer 4 is a SiO film or a SiON film formed by means of a CVD method (for example, the low-pressure CVD technique or the atmospheric-pressure CVD technique) other than the plasma acceleration CVD method. - As described above, in the semiconductor device according to the first embodiment of the present invention, the
adhesive layer 4 consisting of, for example, a P-SiO film or a P-SiON film is formed between theFSG 3 serving as the highest interlayer metal dielectric film and thesilicon nitride film 5 serving as the protective insulation film. - The
adhesive layer 4 causes the fluorine substances emitted froth theFSG 3 to diffuse into theadhesive layer 4, thereby preventing concentration of the fluorine substances along the boundary surface between theFSG 3 and thesilicon nitride film 5. - Therefore, swelling or exfoliation of the
silicon nitride film 5 can be prevented, thus improving adhesion between theFSG 3 and thesilicon nitride film 5. Thus, the reliability of the semiconductor device can be improved. - As a result of the PE-SiO film being used as the
adhesive layer 4, there can be attained superior step coverage, in addition to the previously-described effect. Accordingly, the step coverage of thesilicon nitride film 5 formed on the adhesive layer (PE-SiO film) 4 can be improved. Therefore, there can be provided a semiconductor device having high moisture resistance, thus improving the reliability of the semiconductor device to a much greater extent. - At least one of the upper surface of the
FSG 3 and the upper surface of theadhesive layer 4 is subjected to interfacial treatment (which will be described later), to thereby produce an interfacially-treated layer. As a result, adhesion between theFSG 3 and thesilicon nitride film 5 can be improved further. Next, a method of manufacturing a semiconductor device will now be described. - With reference to
FIG. 1 , a firstmetal wire layer 21, for example aluminum (Al), copper (Cu), or their alloys, is formed on a semiconductor substrate (not shown). - Next, an interlayer
metal dielectric film 3, for example FSG, is formed on the firstmetal wire layer 21. - Further, a second
metal wire layer 22, for example aluminum (Al), copper (Cu), or their alloys, is formed on theFSG 3. - Next, an
adhesive layer 4, for example a P-SiO film, a P-SiON film, or a PE-SiO film (which will be described later), is formed on theFSG 3 and the secondmetal wire layer 22. - Finally, a
protective insulation film 5, for example a silicon nitride film, is formed on theadhesive layer 4 by means of the CVD method. - Next will be described a method of forming the
adhesive layer 4. - The
adhesive layer 4 corresponds to a P-SiON film or P-SiO film formed according to the following [Film Formation Condition 1] through use of the diode parallel plate plasma enhanced CVD method, or corresponds to a PE-SiO film formed according to the following [Film Formation Condition 2] through use of the plasma acceleration CVD method. - The
adhesive layer 4 may be formed not through use of the diode parallel plate plasma enhanced CVD method, but through use of the HDP CVD method. Alternatively, theadhesive layer 4, for example a SiON film or a SiO film, maybe formed through use of another CVD method (e.g., the atmospheric pressure CVD method or the low pressure CVD method). - [Film Formation Condition 1]
- Gas: SiH4+N2O+(N2), or SiH4+O2 (each gas flows at a rate of hundreds of sccm or thereabouts)
- Pressure: 1 to 3 Torr
- RF Power: hundreds of watts [e.g., RF(13.56 MHz): 250W, LF(350 to 450 kHz): 250 W]
- Temperature (film formation temperature): 400° C. or less
- [Film Formation Condition 2]
- Gas: TEOS+O2
- Pressure: 1 to 3 Torrs
- RF Power: hundreds of watts [e.g., RF(13.56 MHz): 300W, LF(350 to 450 kHz): 300 W]
- Temperature (film formation temperature): 400° C. or less
- As described above, in the method of manufacturing a semiconductor device according to the first embodiment, the
FSG 3 is formed on the firstmetal wire layer 21, and the secondmetal wire layer 22 is formed on theFSG 3. Subsequently, theadhesive layer 4 is formed on theFSG 3 and the secondmetal wire layer 22, and thesilicon nitride film 5 is formed on theadhesive layer 4. - According to the manufacturing method of the present embodiment, the
adhesive layer 4 is formed between theFSG 3 and thesilicon nitride film 5. Since, the fluorine substances emitted from theFSG 3 are diffused into theadhesive layer 4, concentration of the fluorine substances along the boundary surface between theFSG 3 and thesilicon nitride film 5 can be prevented. - Therefore, adhesion between the
FSG 3 and thesilicon nitride film 5 is improved, and swelling or exfoliation of thesilicon nitride film 5 can be prevented. Thus, the reliability of the semiconductor device can be improved. - At least before or after formation of the
adhesive layer 4, individual film (i.e. the surface of theFSG 3 or the surface of the adhesive layer 4) is subjected to interfacial treatment by means of plasma processing under, for example the following [interfacial treatment condition]. As a result, adhesion between theFSG 3 and thesilicon nitride film 5 can be improved further. The gas used in plasma processing is not limited to 02 and may be Ar, N2, NH3, or a mixture thereof. - [Interfacial Treatment Conditions]
- Gas: O2 (950 sccm)
- Pressure: 1 Torr
- Temperature: 200° C.
- Microwave Power: 1400W
- Time: 30 sec.
- Even when interfacial treatment is performed not by means of plasma processing but by means of hydrofluoric-acid treatment (which will be described later), UV radiation treatment, or ozone treatment, there is attained an effect similar to that attained by means of plasma processing; in other words, adhesion between the
FSG 3 and thesilicon nitride film 5 can be improved. - Here, the hydrofluoric-acid treatment is interfacial treatment of immersing a wafer (corresponding to the semiconductor substrate) in a chemical solution stored in a chemical bath disposed at a draft, to thereby slightly etch the surface of the wafer (by a thickness of, for example, tens of angstroms to hundreds of angstroms) by means of wet etching. Dilute hydrofluoric acid is used as the chemical solution. A typical example of dilute hydrofluoric acid is a 1:100 hydrofluoric acid solution. Treatment time ranges from 1 to 60 seconds, and a typical treatment time is several seconds.
-
FIGS. 2A through 2D are cross-sectional views for describing a semiconductor device and a method of manufacturing a semiconductor device, according to a second embodiment of the present invention. -
FIGS. 2A through 2D are cross-sectional views for describing a semiconductor device having the highest metal wire layer formed by means of the Damascene method, and for describing a method of manufacturing a semiconductor device including a step of forming the highest metal wire layer by means of the Damascene method. - In the second embodiment, those elements which are the same as those described in connection with the first embodiment are assigned the same or corresponding reference numerals, and repetition of their explanations is simplified or omitted. Further, repeated explanation of the method of forming an adhesive layer and the interfacial treatment method is omitted.
- In connection with
FIG. 2A ,reference numeral 2 designates the highest metal wire layer of a plurality of metal wire layers, which are formed on a semiconductor substrate (not shown); 3 designates a FSG (fluorinated silicate glass film) serving as the highest interlayer metal dielectric film; 4 designates an adhesive layer; and 5 designates a silicon nitride film serving as a protective insulation film. - As shown in
FIG. 2A , theadhesive layer 4 is formed between thehighest FSG 3 and thesilicon nitride film 5 formed on theFSG 3. In the drawing, theadhesive layer 4 is formed on theFSG 3 and themetal wire layer 2. Here, there is a minimum requirement that theadhesive layer 4 be formed on at least theFSG 3. - In connection with
FIG. 2B ,reference numeral 2 designates a metal wire layer; 3 designates a FSG; 4 designates an adhesive layer; and 5 designates a silicon nitride film. - As shown in
FIG. 2B , theadhesive layer 4 is formed between theFSG 3 and thesilicon nitride film 5 formed on theFSG 3. - In connection with
FIG. 2C ,reference numeral 2 designates a metal wire layer; 3 designates a FSG; 41 designates a first adhesive layer; 42 designates a second adhesive layer; and 5 designates a silicon nitride film. - As shown in
FIG. 2C , the two adhesive layers 41 and 42 are formed between theFSG 3 and thesilicon nitride film 5 formed on theFSG 3. - In connection with
FIG. 2D ,reference numeral 2 designates a metal wire layer; 3 designates an FSG; 4 designates an adhesive layer; 51 designates a first silicon nitride film; and 52 designates a second silicon nitride film. - As shown in
FIG. 2D , theadhesive layer 4 is formed between theFSG 3 and thesilicon nitride film 5 consisting of the first and secondsilicon nitride films 51 and 52. - As described above, in the semiconductor device according to the second embodiment, the
adhesive layer 4 is formed between theFSG 3 serving as the highest interlayer metal dielectric film and thesilicon nitride film 5 serving as the protective insulation film. - As described in connection with the first embodiment, the
adhesive layer 4 causes the fluoride substances emitted from theFSG 3 to diffuse into theadhesive layer 4. Therefore, concentration of the fluoride substances along the boundary surface between theFSG 3 and thesilicon nitride film 5 can be prevented. - Accordingly, adhesion between the
FSG 3 and thesilicon nitride film 5 can be improved, and swelling or exfoliation of thesilicon nitride film 5 can be prevented. Therefore, the reliability of the semiconductor device can be improved. - At least one of the
FSG 3 or theadhesive layer 4 is subjected to interfacial treatment (see the first embodiment), wherewith an interfacially-treated surface is produced. As a result, adhesion between thehighest FSG 3 and thesilicon nitride film 5 can be improved further. Consequently, the reliability of the semiconductor device can be improved. - Next will be described a method of manufacturing a semiconductor device.
- First, a first method of manufacturing a semiconductor device will now be described by reference to
FIG. 2A . - With reference to
FIG. 2A , aFSG 3 serving as the highest interlayer metal dielectric film is formed on a semiconductor substrate (not shown). Next, themetal wire layer 2 is formed in theFSG 3 by means of the Damascene method. - Next, the
adhesive layer 4 is formed on theFSG 3 and themetal wire layer 2. - Finally, the
silicon nitride film 5 serving as a protective insulation film is formed on theadhesive layer 4. - The only requirement is that the
adhesive layer 4 be formed on at least theFSG 3, and theadhesive layer 4 is not necessarily formed on themetal wire layer 2. - Next, a second method of manufacturing a semiconductor device will now be described by reference to
FIG. 2B . - With reference to
FIG. 2B , aFSG 3 serving as the highest interlayer metal dielectric film is formed on a semiconductor substrate (not shown). Next, anadhesive layer 4 is formed on theFSG 3. - Next, a
metal wire layer 2 is formed in theadhesive layer 4 by means of the Damascene method. - Finally, a
silicon nitride film 5 serving as a protective insulation film is formed on themetal wire layer 2 and theadhesive layer 4. - Next, a third method of manufacturing a semiconductor device will now be described by reference to
FIG. 2C . - With reference to
FIG. 2C , aFSG 3 serving as the highest interlayer metal dielectric film is formed on a -Semiconductor substrate (not shown). Next, a first adhesive layer 41 is formed on theFSG 3. - Next, a highest
metal wire layer 2 is formed in the first adhesive layer 41. Further, a second adhesive layer 42 is formed on themetal wire layer 2 and the first adhesive layer 41. - Finally, a
silicon nitride film 5 serving as a protective insulation film is formed on the second adhesive layer 42. - Next, a fourth method of manufacturing a semiconductor device will now be described by reference to
FIG. 2D . - With reference to
FIG. 2D , aFSG 3 serving as the highest interlayer metal dielectric film is formed on a semiconductor substrate (not shown). Next, a firstadhesive layer 4 is formed on theFSG 3. - Next, a first silicon nitride film 51 serving as a first protective insulation film is formed on the first adhesive layer 41. Further, a highest
metal wire layer 2 is formed in the first silicon nitride film 51 and theadhesive layer 4 by means of the Damascene method. - Finally, a second
silicon nitride film 52 serving as a second protective insulation film is formed on the first silicon nitride film 51 and themetal wire layer 2. - As described above, in the methods of manufacturing a semiconductor device according to the second embodiment, the highest
metal wire layer 2 is formed by means of the Damascene method, and theadhesive layer 4 is formed between thehighest FSG 3 and thesilicon nitride film 5. - As a result, the fluorine substances emitted from the
FSG 3 diffuse into theadhesive layer 4. Thus, concentration of the fluorine substances along the boundary surface between theFSG 3 and thesilicon nitride film 5 can be prevented. - Accordingly, adhesion between the
FSG 3 and thesilicon nitride film 5 can be improved, and swelling or exfoliation of thesilicon nitride film 5 can be prevented. Thus, the reliability of the semiconductor device can be improved. - At least before and after formation of the
adhesive layer 4, individual film (i.e. the surface of theFSG 3 or the surface of the adhesive layer 4) is subjected to interfacial treatment (see the first embodiment), thereby further improving adhesion between theFSG 3 and thesilicon nitride film 5. Accordingly, the reliability of the semiconductor device can-be improved further. -
FIGS. 3A through 3C are cross-sectional views for describing a semiconductor device and a method of manufacturing a semiconductor device, according to a third embodiment of the present invention. - A semiconductor device is described by reference to
FIGS. 3B and 3C , and a method of manufacturing a semiconductor device is described by reference toFIGS. 3A through 3C . - In the third embodiment, those elements which are identical with or correspond to those described in connection with the first embodiment are assigned the same reference numerals. Repetition of their explanations will be simplified or omitted. Further, explanation of a method of forming an adhesive layer and explanation of an interfacial treatment method are omitted.
- First, a semiconductor device will be described.
- In connection with
FIG. 3B ,reference numeral 1 designates a semiconductor substrate; 21 designates a first metal wire layer; 22 designates a second metal wire layer; 31 designates a first FSG serving as a first interlayer metal dielectric film; 32 designates a second FSG serving as a second interlayer metal dielectric film; and 5 designates a silicon nitride film serving as a protective insulation film. - As shown in
FIG. 3B , a plurality of metal wire layers consisting of the firstmetal wire layer 21 and the secondmetal wire layer 22 are formed on thesemiconductor substrate 1. Thefirst FSG 31 is formed between the firstmetal wire layer 21 and thesemiconductor substrate 1, and thesecond FSG 32 is formed between the firstmetal wire layer 21 and the secondmetal wire layer 22. - The
silicon nitride film 5 is integrally formed on the upper surface of the highest (second)FSG 32, the highest (second)metal wire layer 22, and the side surfaces of theFSG 32. - A semiconductor device shown in
FIG. 3C is analogous in structure to that shown inFIG. 3B . The semiconductor devices differ from each other in that in the semiconductor device shown inFIG. 3C thesilicon nitride film 5 is further formed on the side surfaces of thefirst FSG 31 and on areas of thesemiconductor substrate 1 around theFSG 31. - More particularly, as shown in
FIG. 3C , thesilicon nitride film 5 is integrally formed on the upper surface of the highest (second)FSG 32, the secondmetal wire layer 22, the side surfaces of theFSG semiconductor substrate 1 around theFSG 31. Here, adhesion between thesilicon nitride film 5 and the semiconductor substrate is stronger than adhesion between thesilicon nitride film 5 and theFSG 32. - As described above, in the semiconductor device according to a third embodiment, the
silicon nitride film 5 serving as a protective dielectric film is formed so as to integrally cover the highest (second)FSG 32, the secondmetal wire layer 22, and the side surfaces of theFSG 32. - Accordingly, exfoliation of the
silicon nitride film 5 from the vicinity of the outer periphery of thesemiconductor substrate 1 can be prevented. Thus, the reliability of the semiconductor device can be improved. - The
silicon nitride film 5 is further formed on the side surfaces of thefirst FSG 31 and on areas of thesemiconductor substrate 1 around theFSG silicon nitride film 5 around the outer periphery of thesemiconductor substrate 1 can be prevented further effectively. Accordingly, the reliability of the semiconductor device can be improved further. - When an adhesive layer (see the first
adhesive layer 4 described in connection with the first embodiment) may be formed between thehighest FSG 32 and thesilicon nitride film 5. Thus, fluorine substances emitted from thehighest FSG 32 diffuse into the adhesive layer. Accordingly, concentration of the fluorine substances along the boundary surface between thehighest FSG 32 and thesilicon nitride film 5 can be diminished, thus preventing swelling or exfoliation of thesilicon nitride film 5. Thus, the reliability of a semiconductor device can be improved further. - At least one of the upper surface of the
FSG 32 and the upper surface of an adhesive layer is subjected to interfacial treatment (see the first embodiment), thereby producing an interfacially-treated surface. Therefore, adhesion between thehighest FSG 32 and thesilicon nitride film 5 can be improved further. - Next, a method of manufacturing a semiconductor device will be described.
- As shown in
FIG. 3A , afirst FSG 31 serving as a first interlayer metal dielectric film is formed on asemiconductor substrate 1. Next, a firstmetal wire layer 21 is formed on thefirst FSG 31. - Next, a
second FSG 32 serving as a second interlayer metal dielectric film is formed on theFSG 31 and the firstmetal wire layer 21. Further, a secondmetal wire layer 22 is formed on thesecond FSG 32. - Next, as shown in
FIG. 3B , the thus-formedsecond FSG 32 is eliminated within arange 10 from the outer periphery of thesemiconductor substrate 1. More specifically, the side surfaces of thesecond FSG 32 located in the vicinity of the outer periphery of thesemiconductor substrate 1 are eliminated. - Finally, a
silicon nitride film 5 serving as a protective insulation film is formed so as to integrally cover the side surfaces of thesecond FSG 32, thesecond FSG 32, and the secondmetal wire layer 22. - After removal of the
second FSG 32 within arange 10 from the outer periphery of thesemiconductor substrate 1 as mentioned above, thefirst FSG 31 formed within apredetermined range 10 may be further removed, as shown inFIG. 3C . - Subsequently, the
silicon nitride film 5 serving as a protective insulation film is formed so as to integrally cover the portions of thesemiconductor substrate 1 exposed as a result of removal of thefirst FSG 31, the side surfaces of theFSG second FSG 32, and the secondmetal wire layer 22. - As described above, in the method of manufacturing a semiconductor device according to the third embodiment, the side surfaces of the
second FSG 32 are removed. Thesilicon nitride film 5 serving as a protective insulation film is formed so as to integrally cover the top and side surfaces of thesecond FSG 32, which surfaces are exposed as a result of removal of thesecond FSG 32, and the secondmetal wire layer 22. - Accordingly, exfoliation of the
silicon nitride film 5 from the vicinity of the outer periphery of thesemiconductor substrate 1 can be prevented, thus improving the reliability of the semiconductor device. - The side surfaces of the
first FSG 31 and thesecond FSG 32 are removed, to thereby cause the surface of thesemiconductor substrate 1 to become exposed. Thesilicon nitride film 5 serving as a protective insulation film is formed so as to integrally cover the portions of thesemiconductor substrate 1 exposed as a result of removal of the first andsecond FSG FSG second FSG 32; and the secondmetal wire layer 22. Therefore, adhesion of thesilicon nitride film 5 in the vicinity of the outer periphery of thesemiconductor substrate 1 can be improved further. - Accordingly, prevention of exfoliation of the
silicon nitride film 5 from the vicinity of the outer periphery of thesemiconductor substrate 1 can be improved further, thus improving the reliability of the semiconductor device. - Alternatively, an adhesive layer maybe formed on the
second FSG 32, and thesilicon nitride film 5 may be formed on the thus-formed adhesive layer. In this case, the adhesive layer causes the fluorine substances emitted from thesecond FSG 32 to diffuse into the adhesive layer. Thus, concentration of the fluorine substances along the boundary surface between thesecond FSG 32 and thesilicon nitride film 5 can be prevented. Therefore, adhesion between thesecond FSG 32 and thesilicon nitride film 5 can be improved further, thereby improving the reliability of the semiconductor device. - At least before or after formation of the
adhesive layer 4, individual film is subjected to interfacial treatment (see the first embodiment). As a result, adhesion between thehighest FSG 32 and thesilicon nitride film 5 can be improved further. -
FIGS. 4A and 4B are views for describing a semiconductor device and a method of manufacturing a semiconductor device according to a fourth embodiment of the present invention. More specifically,FIG. 4A is a plan view describing for a semiconductor device, andFIG. 4B is a cross-sectional view for describing the semiconductor device taken along line AA′ shown inFIG. 4A . - In the fourth embodiment, those elements which are identical with or correspond to. those of the semiconductor device described in connection with the first embodiment are assigned the same reference numerals, and repetition of their explanation is simplified or omitted. Further, explanation of a method of forming an adhesive layer and explanation of an interfacial treatment method are omitted.
- First, the structure of a semiconductor device will be described.
- In connection with
FIG. 4A ,reference numeral 1 designates a semiconductor substrate; 11 designates a chip region of thesemiconductor substrate 1; and 12 designates a non-chip region. Here, thenon-chip region 12 is an area in the vicinity of the outer periphery of thesemiconductor substrate 1, where semiconductor devices (chips) cannot be formed by means of dicing. - In connection with
FIG. 4B ,reference numeral 1 designates a semiconductor substrate; 21 designates a first metal wire layer; 22 designates a second metal wire layer; 210 designates a first metal film; 220 designates a second metal film; 31 designates a first FSG serving as a first interlayer metal dielectric film; 32 designates a second FSG serving as a second interlayer metal dielectric film; and 5 designates a silicon nitride film serving as a protective insulation film. - As shown in
FIG. 4B , a plurality of metal wire layers consisting of the firstmetal wire layer 21 and the secondmetal wire layer 22 are formed within achip region 11 on thesemiconductor substrate 1. - The
first metal film 210 is formed on the entirenon-chip region 12 in the vicinity of the outer periphery of thesemiconductor substrate 1, and the thus-formedfirst metal film 210 is flush with the firstmetal wire layer 21. Similarly, thesecond metal film 220 is formed on the entirenon-chip region 12, and the thus-formedsecond metal film 220 is flush with the secondmetal wire layer 22. - The
first FSG 31 is formed between thesemiconductor substrate 1 and the firstmetal wire layer 21, and thesecond FSG 32 is formed between the firstmetal wire layer 21 and the secondmetal wire layer 22. Here, thesecond metal film 220 is superior to thesecond FSG 32 in terms of adhesion to thesilicon nitride film 5. - The
silicon nitride film 5 is formed on thehighest metal film 220, the highestmetal wire layer 22, and thehighest FSG 32 layer. - As described above, in the semiconductor device according to the fourth embodiment, the
metal film 220, which is flush with the highestmetal wire layer 22, is formed on the entirenon-chip region 12. - In the
non-chip region 12 of thesemiconductor substrate 1, adhesion between thesilicon nitride film 5 and thesecond metal film 220 can be improved, thereby preventing exfoliation of thesilicon nitride film 5 from the vicinity of the outer periphery of thesemiconductor substrate 1 and improving the reliability of the semiconductor device. - An adhesive layer (see the first
adhesive layer 4 of the present embodiment) may be formed between the highest (second)FSG 32 and thesilicon nitride film 5. Thus, the fluorine substances emitted from thesecond FSG 32 are diffused into the adhesive layer. Therefore, concentration of the fluorine substances along the boundary surface between thesecond FSG 32 and thesilicon nitride film 5 can be prevented. Consequently, swelling or exfoliation of thesilicon nitride film 5 can be prevented, thereby improving the reliability of the semiconductor device. - At least one of the upper surface of the
FSG 32 and the upper surface of the adhesive layer are subjected to interfacial treatment, thereby producing an interfacially-treated surface (see the first embodiment). Therefore, adhesion between thehighest FSG 32 and thesilicon nitride film 5 can be improved further. - Next, a method of manufacturing the semiconductor device will now be described.
- As shown in
FIGS. 4A and 4B , afirst FSG 31 is formed on asemiconductor substrate 1. Next, a firstmetal wire layer 21 is formed in achip region 11 on thefirst FSG 31, and thefirst metal film 210 is formed on a entirenon-chip region 12. Here, the firstmetal wire layer 21 is flush with thefirst metal film 210. - Next, a
second FSG 32 is formed on the firstmetal wire layer 21. Further, a secondmetal wire layer 22 is formed in thechip region 11 on thesecond FSG 32, and asecond metal film 220 is formed on the entire surface of thenon-chip region 12. Here, the secondmetal wire layer 22 is flush with thesecond metal film 220. - Finally, a
silicon nitride film 5 is formed on thesecond FSG 32, thesecond metal film 220, and the secondmetal wire layer 22. - As described above, in the method of manufacturing a semiconductor device according to the fourth embodiment, after formation of the
second FSG 32, the secondmetal wire layer 22 serving as the highest metal wire layer is formed on thechip region 11 of thesecond FSG 32. Thesecond metal film 220 is formed on the entire surface of thenon-chip region 12. Thesilicon nitride film 5 is formed on thesecond FSG 32, thesecond metal film 220, and the secondmetal wire layer 22. - Adhesion between the
metal film 220 formed on the entirenon-chip region 12 of thesemiconductor substrate 1 and thesilicon nitride film 5 is stronger than adhesion existing between theFSG 32 and thesilicon nitride film 5. Accordingly, exfoliation of thesilicon nitride film 5 from the vicinity of the outer periphery of thesemiconductor substrate 1 can be prevented, thus improving the reliability of the semiconductor device. - After formation of the second
metal wire layer 22, an adhesive layer may be formed on thesecond FSG 32. Thesilicon nitride film 5 may be formed on the adhesive layer. In this case, the adhesive layer causes the fluorine substances emitted from thesecond FSG 32 to diffuse into the adhesive layer, thereby preventing concentration of the fluorine substances along the boundary surface between thesecond FSG 32 and thesilicon nitride film 5. Consequently, adhesion between thesecond FSG 32 and thesilicon nitride film 5 can be improved, which in turn improves the reliability of the semiconductor device. - Further, at least before or after formation of the adhesive layer, individual films may be subjected to interfacial treatment (see the first embodiment). As a result, adhesion between the
highest FSG 32 and thesilicon nitride film 5 can be improved further. - In the fourth embodiment, a multilayer film consisting of the
metal films metal film 220 be formed so as to become flush with the highestmetal wire layer 22. Namely, formation of themetal film 210 flush with the lowermetal wire layer 21 may be omitted. - This invention, when practiced illustratively in the manner described above, provides the following major effects: According to a first aspect of the present invention, an adhesive layer formed between a fluorinated silicate glass film and a silicon nitride film enhances adhesion between the fluorinated silicate glass film and the silicon nitride film. Accordingly, swelling or exfoliation of the silicon nitride film can be prevented, which in turn improves the reliability of a semiconductor device.
- According to a second aspect of the present invention, a silicon nitride film is formed on the sides of a fluorinated silicate glass film as well. Consequently, exfoliation of a silicon nitride film from the edge of the fluorinated silicate glass film can be prevented.
- In a preferred variation of the present invention, exfoliation of the silicon nitride film from the vicinity of outer periphery of a semiconductor substrate can be prevented.
- In a preferred variation of the present invention, strong adhesion exists between a silicon nitride film and a metal film in the vicinity of the outer periphery of the semiconductor substrate, thereby preventing exfoliation of the silicon nitride film.
- In a preferred variation of the present invention, the semiconductor device is further provided with an additional adhesive layer, which further improves adhesion between the fluorinated silicate glass film and the silicon nitride film.
- In a preferred variation of the present invention, since individual contact surfaces are subjected to interfacial treatment, adhesion between the fluorinated silicate glass film and the silicon nitride film can be improved further.
- In a preferred variation of the present invention, a P-SiO film or P-SiON film serving as an adhesion layer can be formed between a fluorinated silicate glass film and a silicon nitride film improves adhesion between the fluorinated silicate glass film and the silicon nitride film.
- In a preferred variation of the present invention, since step coverage of a silicon nitride film is improved by means of taking a PE-SiO film as an adhesive layer, adhesion between the fluorinated silicate glass film and the silicon nitride film can be improved further.
- According to a third aspect of the present invention, since an adhesive layer is formed between a fluorinated silicate glass film and a silicon nitride film, swelling or exfoliation of the silicon nitride film can be prevented.
- In a preferred variation of the present invention, in a case where the highest metal wire layer is formed by means of the Damascene method, an adhesive layer is formed between a fluorinated silicate glass film and a silicon nitride film, thereby preventing swelling or exfoliation of a silicon nitride film.
- In a preferred variation of the present invention, in a case where the highest metal wire layer is formed by means of the Damascene method, exfoliation or swelling of a silicon nitride film can be prevented even when two adhesive layers are formed between a fluorinated silicate glass film and the silicon nitride film.
- In a preferred variation of the present invention, in a case where the highest metal wire layer is formed by means of the Damascene method, exfoliation or swelling of a silicon nitride film can be prevented even when two silicon nitride films are formed on the adhesive layer.
- In a preferred variation of the present invention, a silicon nitride film is formed on the side surfaces of a second fluorinated silicate glass film as well as on the second fluorinated silicate glass film and the second metal wire layer. As a result, exfoliation of the silicon nitride film from the edge of the second fluorinated silicate glass film can be prevented.
- In a preferred variation of the present invention, a silicon nitride film is formed on areas around a fluorinated silicate glass film, side surfaces of the fluorinated silicate glass film, a second fluorinated silicate glass film, and a second metal wire layer, thereby preventing exfoliation of a silicon nitride film from the vicinity of the outer periphery of a semiconductor substrate.
- In a preferred variation of the present invention, formation of an additional adhesive layer enhances adhesion between the second fluorinated silicate glass film and the silicon nitride film.
- In a preferred variation of the present invention, since strong adhesion exists between a metal film formed within a non-chip region and a silicon nitride film, exfoliation of a silicon nitride film from the vicinity of outer periphery of a semiconductor substrate can be prevented.
- In a preferred variation of the present invention, interfacial treatment of contact surfaces results in an improvement in adhesion.
- In a preferred variation of the present invention, the plasma CVD technique can be employed as a method of forming a P-SiO film or P-SiON film as an adhesive layer.
- In a preferred variation of the present invention, the plasma acceleration CVD technique can be employed as a method of forming a PE-SiO film as an adhesive layer.
- Further, the present invention is not limited to these embodiments, but variations and modifications may be made without departing from the scope of the present invention.
- The entire disclosure of Japanese Patent Application No. 2000-241267 filed on Aug. 9, 2000 containing specification, claims, drawings and summary are incorporated herein by reference in its entirety.
Claims (5)
1-16. (canceled)
17. A semiconductor device comprising:
a semiconductor substrate;
a plurality of metal wire layers formed on said semiconductor substrate, comprising a highest metal wire layer and a plurality of lower metal wire layers under lying said highest metal wire layer;
a plurality of fluorinated silicate glass films formed respectively between said plurality of lower metal wire layers, and said plurality of fluorinated silicate glass films acting as interlayer metal dielectric film;
a silicon nitride film formed on the highest fluorinated silicate glass film, and said silicon nitride film acting as a protective insulation film; and
an adhesive layer formed between said highest fluorinated silicate glass film and said silicon nitride film,
wherein said silicon nitride film includes a first silicon nitride film and a second silicon nitride film,
the highest metal wire layer is formed in said adhesive layer and said first silicon nitride film, and
said second silicon nitride film is formed on said highest metal wire layer and said first silicon nitride film.
18. A semiconductor device comprising:
a semiconductor substrate;
a plurality of metal wire layers formed on said semiconductor substrate;
a plurality of fluorinated silicate glass film formed between said plurality of metal wire layers, and said plurality of fluorinated silicate glass films acting as an interlayer metal dielectric film; and
a silicon nitride film which is integrally formed on the sides of the highest fluorinated silicate glass film, on said highest fluorinated silicate glass film, and on the highest metal wire layer, and on said silicon nitride film acting as a protective insulation film.
19. The semiconductor device according to claim 18 , wherein said silicon nitride film is further formed in areas on said semiconductor substrate around said fluorinated silicate glass film.
20. The semiconductor device according to claim 18 , further comprising an adhesive layer formed between said highest fluorinated silicate glass film and said silicon nitride film.
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US09/802,951 US6579787B2 (en) | 2000-08-09 | 2001-03-12 | Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereof |
US10/446,876 US7012336B2 (en) | 2000-08-09 | 2003-05-29 | Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereof |
US11/291,994 US20060081992A1 (en) | 2000-03-12 | 2005-12-02 | Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereof |
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US10/446,876 Expired - Fee Related US7012336B2 (en) | 2000-03-12 | 2003-05-29 | Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereof |
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Also Published As
Publication number | Publication date |
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US7012336B2 (en) | 2006-03-14 |
US6579787B2 (en) | 2003-06-17 |
JP2002057212A (en) | 2002-02-22 |
US20030211721A1 (en) | 2003-11-13 |
US20020024145A1 (en) | 2002-02-28 |
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