US20050263907A1 - Method of manufacturing semiconductor device and support structure for semiconductor substrate - Google Patents
Method of manufacturing semiconductor device and support structure for semiconductor substrate Download PDFInfo
- Publication number
- US20050263907A1 US20050263907A1 US11/132,063 US13206305A US2005263907A1 US 20050263907 A1 US20050263907 A1 US 20050263907A1 US 13206305 A US13206305 A US 13206305A US 2005263907 A1 US2005263907 A1 US 2005263907A1
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- Prior art keywords
- layer
- adhesive layer
- semiconductor substrate
- semiconductor
- semiconductor device
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Definitions
- the present invention relates to a method of manufacturing a semiconductor device and a support structure for a semiconductor substrate used for the method.
- FIG. 1 is a schematic illustration of a semiconductor device 10 having a CSP (Chip Size Package) structure, which is an example of a structure that allows size reduction of semiconductor devices.
- CSP Chip Size Package
- the semiconductor device 10 comprises a semiconductor substrate 11 , which may be a Si wafer or the like, having a device face 11 A on which semiconductor device elements are formed and a back face 11 B opposite to the device face 11 A.
- Plural electrode pads 12 made of Al or the like are formed on the device face 11 A.
- a passivation layer 12 A made of SiN or the like is formed to cover the device face 11 A except where the electrode pads 12 are formed.
- the passivation layer 12 A is covered by a passivation layer 13 made of resin such as polyimide. Further, the passivation layer 13 is covered by a sealing resin layer 15 .
- Wiring sections 14 made of Cu are formed in openings in the passivation layer 12 A and the passivation layer 13 to be connected to the electrode pads 12 .
- the wiring sections 14 are patterned to extend partly onto the passivation layer 13 .
- Wiring posts 16 are formed upright on the wiring sections 14 formed on the passivation layer 13 to be connected to the wiring sections 14 .
- a side surface of each of the wiring posts 16 is surrounded by the sealing resin layer 15 , but an upper end thereof is exposed from the sealing resin layer 15 .
- a barrier metal layer 17 is formed on the exposed-upper end of each of the wiring posts 16 .
- a bump ball 18 made of solder or the like is formed on the barrier metal layer 17 .
- wiring connecting semiconductor device elements to metal bumps is highly densely formed on a semiconductor substrate. Therefore, it is possible to reduce the size of the semiconductor device.
- a thickness D of the semiconductor substrate needs to be reduced. Therefore, attempts to make the semiconductor device thinner by grinding the back face 11 B have been made in semiconductor device packaging techniques.
- a passivation film on a back face of a semiconductor substrate is often partly separated from the semiconductor substrate in a process of forming a semiconductor device.
- a passivation film having properties (e.g. rigidity) different from those of a semiconductor substrate is often separated from the semiconductor substrate in a so-called dicing process where the semiconductor substrate is cut into chips.
- Such partial separation of the passivation film also lowers production yield of semiconductor devices.
- a specific object of the present invention is to provide a method of manufacturing a semiconductor device and a support structure for a semiconductor substrate that reduce manufacturing defects of semiconductor devices with thin semiconductor substrates so as to manufacture thin semiconductor devices.
- a method of manufacturing a semiconductor device that comprises a first step of grinding a second principle surface of a semiconductor substrate opposite to a first principle surface of the semiconductor substrate on which semiconductor device elements are formed, a second step of attaching a support structure configured to support the semiconductor substrate to the second principle surface after the first step, and a third step of detaching the semiconductor substrate from the support structure.
- the method of manufacturing a semiconductor device further comprise a dicing process of dicing the semiconductor substrate between the second step and the third step.
- a dicing process of dicing the semiconductor substrate between the second step and the third step.
- the method of manufacturing a semiconductor device further comprise a sealing process of covering the first principle surface with a resin layer between the second step and the third step. This method can prevent damage to semiconductor devices in the sealing process.
- the method of manufacturing a semiconductor device further comprise a wiring step of forming a wiring section on the first principle surface to be connected to the semiconductor device elements prior to the third step. With this method, higher density wiring can be formed.
- the support structure comprise an adhesive layer formed to contact the semiconductor substrate and a supporting layer to support the adhesive layer, the adhesive layer comprising a first adhesive layer to adhere to the semiconductor substrate, a second adhesive layer configured to adhere to the supporting layer and having an adhesive force greater than an adhesive force of the first adhesive layer, and a base layer interposed between the first adhesive layer and the second adhesive layer.
- a support structure for a semiconductor substrate being adapted to adhere to the semiconductor substrate and comprising an adhesive layer formed to adhere to the semiconductor substrate, and a supporting layer to support the adhesive layer, wherein the adhesive layer comprises a first adhesive layer to adhere to the semiconductor substrate, a second adhesive layer configured to adhere to the supporting layer and having an adhesive force greater than an adhesive force of the first adhesive layer, and a base layer interposed between the first adhesive layer and the second adhesive layer.
- This support structure can protect thin semiconductor substrates from damage and warpage while supporting the semiconductor substrates. Moreover, this support structure allows a semiconductor substrate to be detached from an adhesive layer and allows the adhesive layer to be detached from a supporting layer.
- the supporting layer include a Si wafer. If so, the supporting layer can be easily formed.
- FIG. 1 is a schematic cross-sectional view of a semiconductor device having a CSP structure
- FIG. 2 is a schematic cross-sectional view of a support structure according to a first embodiment
- FIGS. 3A through 3P illustrate the method of manufacturing a semiconductor device according to a second embodiment.
- FIG. 2 is a schematic cross-sectional view of a support structure 200 for a semiconductor substrate according to a first embodiment.
- the support structure 200 of this embodiment is a type adapted to adhere to a semiconductor substrate, comprising an adhesive layer 202 formed to adhere to a semiconductor substrate and a supporting layer 201 configured to support the adhesive layer 202 .
- the adhesive layer 202 includes a first adhesive layer 202 A that adherers to the semiconductor substrate and a second adhesive layer 202 B that has a greater adhesive force than the first adhesive layer 202 A and adheres to the supporting layer 201 .
- a base layer 202 C made of PET (polyethylene terephthalate), PEN (polyethylene naphthalate) or the like is interposed between the first adhesive layer 202 A and the second adhesive layer 202 B.
- the first adhesive layer 202 A adheres to the back face of the semiconductor substrate.
- semiconductor substrates go through a so-called backgrinding process, where back faces of the semiconductor substrates are ground to reduce the thickness thereof.
- the semiconductor substrates having thickness thus reduced are likely to suffer warpage or damage.
- Such warpage and damage of semiconductor substrates can be prevented by attaching the support structure 200 of this embodiment to the back faces of the semiconductor substrates after reducing the thickness of the semiconductor substrates in the backgrinding process.
- the adhesive force of the first adhesive layer 202 A is adjusted to allow the semiconductor substrate attached to the first adhesive layer 202 A to be detached from the support structure 200 .
- a passivation layer (or the supporting layer) of the semiconductor substrate does not remain on the back face of the finished semiconductor device.
- semiconductor substrates can be protected from warpage and damage in semiconductor device manufacturing processes such as a packaging process, while the thickness of the semiconductor devices is reduced.
- the adhesive force of the second adhesive layer 202 B is greater than the adhesive force of the first adhesive layer 202 A. Therefore, when the semiconductor substrate is detached from the support structure 200 , the adhesive layer 202 remains on the supporting layer 201 without being detached (separated) from the supporting layer 201 .
- the adhesive layer 202 including the first adhesive layer 202 A and the second adhesive layer 202 B can be detached (separated) from the supporting layer 201 with a force greater than a force required for detaching the semiconductor substrate. More specifically, the adhesive layer 202 is separated from the supporting layer 201 at the interface between the second adhesive layer 202 B and the supporting layer 201 .
- This configuration allows the separated adhesive layer 202 and the supporting layer 201 to be reused individually. For example, if an impact is applied to the support structure 200 and therefore the supporting layer 201 is damaged, the adhesive layer 202 may be separated from the damaged supporting layer 201 to be reused with a new supporting layer 201 . If, on the other hand, the adhesive layer 202 is damaged or becomes unusable due to loss of adhesive force, the supporting layer 201 may be separated from the damaged or unusable adhesive layer 202 to be reused with a new adhesive layer 202 .
- the adhesive layer 202 is preferably formed such that the first adhesive layer 202 A and the second adhesive layer 202 B are attached one on each side of the base layer 202 C made of PET, PEN or the like. In this way, the adhesive layer 202 can be easily formed to have the upper face and the lower face with different adhesive forces and to be attachable to both the semiconductor substrate and the supporting layer 201 .
- the supporting layer 201 preferably has a predetermined rigidity to support the semiconductor substrate and to protect the semiconductor substrate from damage and warpage.
- heat resistance and chemical resistance to prevent damage, corrosion and etching in various processes performed in the semiconductor device manufacturing processes (packaging process). It is also preferable to have physical properties, such as the thermal expansion coefficient, that are the same as or similar to physical properties of the semiconductor substrate.
- the supporting layer 201 is preferably formed of a Si wafer to meet the requirements described above. Particularly in the case where the semiconductor substrate supported by the support structure 200 is formed of a Si wafer, it is advantageous in that there is no need to process the support structure because the support structure 200 and the supported semiconductor substrate substantially have the same size and materials, as well as in that they are readily available. Moreover, costs can be lowered by using so-called reclaimed Si wafers, which are formed by etching or grinding faces on which semiconductor device elements and films are formed previously, as the supporting layer 201 .
- glass plates or ceramic plates are applicable as the supporting layer 201 if the above requirements are satisfied.
- the following describes a method of manufacturing a semiconductor device using the support structure of this embodiment.
- FIGS. 3A through 3P illustrate the method of manufacturing a semiconductor device step by step according to a second embodiment.
- a substrate 101 on which semiconductor device elements are formed is prepared.
- the substrate 101 formed of a semiconductor substrate such as a Si wafer has a device face 101 A on which semiconductor device elements are formed.
- an electrode pad 102 made of Al or the like is also formed to be connected to a part of the device.
- the distance between the device face 101 A of the substrate 101 and a back face 101 B opposite to the device face 101 A, i.e., a thickness dA of the substrate 101 is approximately 700 ⁇ m, although not limited to this thickness.
- a passivation layer 103 made of SiN or the like is formed to cover the device face 101 A while leaving the electrode pad 102 exposed through an opening.
- a passivation layer 104 made of polyimide or the like is formed on the passivation layer 103 while also leaving the electrode pad 102 exposed through an opening.
- a metal adhesion layer 105 made of metal such as Cr and Ti is formed on the electrode pad 102 and the passivation layer 104 by sputtering. Further, a seed layer 106 made of Cu is formed on the adhesion layer 105 by sputtering.
- a photoresist layer 107 is formed.
- a mask (not shown) is then formed on the photoresist layer 107 , and the photoresist is patterned by exposure and development.
- a wiring section 108 electrically connected to the electrode pad 102 is formed where the photoresist is removed on the patterning.
- the wiring section 108 is formed by Cu electrolytic plating using the seed layer 106 as a power supply layer.
- photoresist is removed by organic solvent or the like.
- a photoresist layer 109 made of a photosensitive dry film or the like is attached to cover the wiring section 108 and the seed layer 106 .
- the photoresist layer 109 is patterned by exposure and development using a mask.
- a wiring post 110 is formed upright on the wiring section 108 on which the photoresist is removed.
- the wiring post 110 is formed by Cu electrolytic plating using the seed layer 106 as a power supply layer.
- a plating layer 111 having, for example, a Ni/Pd/Au structure is then formed on the wiring post 110 by electrolytic plating.
- the plating layer 111 serves as a barrier (or serves to prevent diffusion) while improving adhesiveness.
- an upper end face of the plating layer 111 is substantially flush with an upper end face of the photoresist layer 109 .
- a thickness d 1 of the photoresist layer 109 is, for example, 100 ⁇ m, although not limited to this thickness.
- a backgrinding tape 112 made of resin or the like is attached on the photoresist layer 109 and the plating layer 111 .
- the backgrinding tape 112 has a thickness d 2 of, for example, 150 ⁇ m.
- the backgrinding tape 112 serves as a passivation layer for the device face 101 A, the wiring post 110 , the plating layer 111 and the wiring section 108 in the following process of grinding the back face 101 B of the substrate 101 , and also makes it easy to hold (chuck) the substrate 101 in a grinding machine (not shown).
- the back face 101 B of the substrate 101 is ground by the grinding machine so as to reduce the thickness of the substrate 101 to a thickness dB.
- the thickness is, for example, around 200 ⁇ m through 300 ⁇ m, although not limited to this thickness.
- the substrate 101 is attached to the support structure 200 of FIG. 2 .
- FIG. 3H elements identical to those already described bear the same reference numbers and are not further discussed.
- the support structure 200 as shown in FIG. 2 comprises the supporting layer 201 and the adhesive layer 202 formed thereon.
- the adhesive layer 202 includes the base layer 202 C, and the first adhesive layer 202 A and the second adhesive layer 202 B attached on the upper face and the lower face, respectively, of the base layer 202 C.
- the back face 101 B of the ground substrate 101 is attached to the first adhesive layer 202 A of the support structure 200 .
- the adhesive force of the first adhesive layer 202 A is adjusted to be smaller than the adhesive force of the second adhesive layer 202 B. Therefore, the substrate 101 can be easily detached from the adhesive layer 202 in the following process while preventing the adhesive layer 202 from being detached from the supporting layer 201 .
- the supporting layer 201 prevents warpage of the substrate 101 in this and following processes and also prevents damage to the substrate 101 to improve the production yield of the semiconductor device.
- the supporting layer 201 is formed of a Si wafer
- the supporting layer 201 and the substrate 101 have the same physical properties including thermal expansion coefficient. Therefore, the supporting layer 201 expands and deforms to follow expansion and deformation of the substrate 101 , and thus prevents cracking of the substrate 101 .
- a method of protecting or holding a semiconductor substrate with a back face thereof attached to a supporting structure as described in this process is especially effective in a semiconductor device manufacturing process including a backgrinding process for reducing the thickness of the substrate. Also, this method is suitable to meet the recent demands for higher performance and smaller semiconductor devices.
- the support structure 200 described in this embodiment is attached to the substrate 101 by the first adhesive layer 202 A, the support structure 200 can be detached from the substrate 101 . Therefore, unlike a conventional passivation film formed, for example, on a back face of a substrate and which cannot be easily detached therefrom, the support structure 200 makes it possible to have thinner semiconductor devices with no increase in thickness.
- the exposed part of the seed layer 106 is removed by wet etching, and then the part of the adhesion layer 105 exposed by wet etching is also removed by wet etching.
- the seed layer 106 and the adhesion layer 105 not covered by the wiring section 108 are removed by etching.
- a molded resin layer 113 is formed to cover the passivation layer 104 , the wiring section 108 a side wall of the wiring post 110 , and the molded resin is then heated and cured. It should be noted that an upper end of the plating layer 111 is exposed on the molded resin for electrical connection.
- the resin layer 113 may alternatively be formed by lamination of resin films.
- a solder bump 114 electrically connected to the wiring post 110 through the plating layer 111 is formed on the plating layer 111 .
- the support structure 200 with the substrate 101 attached thereon is attached on a dicing tape 115 having a dicing frame to be prepared for the following dicing process.
- production of a semiconductor device semiconductor chip
- the dicing process i.e., a process of cutting the substrate 101 into chips.
- FIG. 3N shows only one semiconductor device 100 , there are plural semiconductor devices 100 formed in an array along a plane in a direction that the substrate 101 extends.
- the substrate 101 is cut by a dicing technique to have the plural semiconductor devices 100 separated from each other.
- the dicing machine is preferably controlled such that only the molded resin layer 113 through the substrate 101 are cut but not the support structure 200 .
- the semiconductor devices (semiconductor chips) 100 separated from each other by the dicing technique are detached from the support structure 200 by separating the back face 101 B of each of the semiconductor devices 100 from the first adhesive layer 202 A using a dicing picker or the like, and thus the completed semiconductor devices 100 are obtained.
- the substrate 101 is easily detached from the support structure 200 , thereby preventing increase of thickness of the semiconductor device 100 due to the use of the support structure 200 .
- the thickness of the semiconductor device 100 can be thus reduced.
- defects such as partial separation or loss of the passivation film and chipping often occur.
- Such partial separation or loss of the passivation film leads to variation of thickness and shape of semiconductor devices. This embodiment can prevent these problems and therefore enable stably manufacturing semiconductor devices having the same shape, that is, offers reproducibility of shape.
- the support structure 200 serves to prevent cracking and warpage of the substrate 101 in the process of removing the backgrinding tape 112 shown in FIG. 3I , the process of separating the photoresist layer 109 shown in FIG. 3J , the process of etching the seed layer 106 and the adhesion layer 105 shown in FIG. 3K , and the process of forming the solder bump 114 shown in FIG. 3M .
- dicing operations are stably performed while preventing defects such as damage to and chipping in the substrate 101 .
- the semiconductor device 100 can be separated from the adhesive layer 202 without separating the adhesive layer 202 from the supporting layer 201 , because the adhesive force of the first adhesive layer 202 A is smaller than the adhesive force of the second adhesive layer 202 B.
- the adhesive layer 202 including the first adhesive layer 202 A and the second adhesive layer 202 B can be detached (separated) from the supporting layer 201 with a force greater than a force required for detaching the substrate 101 . More specifically, the adhesive layer 202 is separated from the supporting layer 201 at the interface between the second adhesive layer 202 B and the supporting layer 201 . This configuration allows the separated adhesive layer 202 and the supporting layer 201 to be reused individually.
- the support structure 200 of this embodiment can be reused, costs required for protection of the substrate 101 can be reduced. Furthermore, the supporting layer 201 and the adhesive layer 202 are independently reusable, and therefore maintenance cost is also reduced.
- the present invention is not limited thereto.
- the present invention is applicable to other methods of manufacturing a semiconductor device having a so-called backgrinding process of grinding a back face of a semiconductor substrate to reduce the thickness of the semiconductor substrate. If the present invention is applied to these methods, the methods make it possible to improve production yield of semiconductor devices by preventing cracking and warpage of substrates, and allow a substrate to be detached from a support structure and therefore enable reduction of thickness of semiconductor devices as with the method of manufacturing a semiconductor device having a CSP structure.
Abstract
A method of manufacturing a semiconductor device is disclosed. The method comprises a first step of grinding a second principle surface of a semiconductor substrate opposite to a first principle surface of the semiconductor substrate on which semiconductor device elements are formed, a second step of attaching a support structure configured to support the semiconductor substrate to the second principle surface after the first step, and a third step of detaching the semiconductor substrate from the support structure.
Description
- 1. Field of the Invention
- The present invention relates to a method of manufacturing a semiconductor device and a support structure for a semiconductor substrate used for the method.
- 2. Description of the Related Art
- With growing demands for smaller and higher performance semiconductor devices in recent years, packaging of semiconductors is required to have smaller size and provide for higher performance.
- For example, there has been a demand for reducing thickness of semiconductor devices. To meet this demand, it is necessary to reduce the thickness of packaged semiconductor substrates by increasing a grinding amount in a so-called backgrinding process, where a back face of a semiconductor substrate or a face opposite to a face on which semiconductor device elements are formed is ground to reduce the thickness of the semiconductor substrate.
-
FIG. 1 is a schematic illustration of asemiconductor device 10 having a CSP (Chip Size Package) structure, which is an example of a structure that allows size reduction of semiconductor devices. - Referring to
FIG. 1 , thesemiconductor device 10 comprises asemiconductor substrate 11, which may be a Si wafer or the like, having adevice face 11A on which semiconductor device elements are formed and aback face 11B opposite to thedevice face 11A.Plural electrode pads 12 made of Al or the like are formed on thedevice face 11A. Apassivation layer 12A made of SiN or the like is formed to cover thedevice face 11A except where theelectrode pads 12 are formed. Thepassivation layer 12A is covered by apassivation layer 13 made of resin such as polyimide. Further, thepassivation layer 13 is covered by a sealingresin layer 15. -
Wiring sections 14 made of Cu are formed in openings in thepassivation layer 12A and thepassivation layer 13 to be connected to theelectrode pads 12. Thewiring sections 14 are patterned to extend partly onto thepassivation layer 13. -
Wiring posts 16 are formed upright on thewiring sections 14 formed on thepassivation layer 13 to be connected to thewiring sections 14. A side surface of each of thewiring posts 16 is surrounded by the sealingresin layer 15, but an upper end thereof is exposed from thesealing resin layer 15. Abarrier metal layer 17 is formed on the exposed-upper end of each of thewiring posts 16. Abump ball 18 made of solder or the like is formed on thebarrier metal layer 17. - In this type of semiconductor device having a CSP structure, wiring connecting semiconductor device elements to metal bumps is highly densely formed on a semiconductor substrate. Therefore, it is possible to reduce the size of the semiconductor device.
- For further reduction of size or thickness of the semiconductor device, a thickness D of the semiconductor substrate needs to be reduced. Therefore, attempts to make the semiconductor device thinner by grinding the
back face 11B have been made in semiconductor device packaging techniques. - However, thickness reduction of semiconductor substrates increases defects such as damage to or warpage of semiconductor substrates, and therefore lowers production yield of semiconductor devices. There have been some attempts to prevent defects due to thickness reduction of semiconductor substrates by forming a passivation film on a back face of a semiconductor substrate (see, for example, Japanese Patent Laid-Open Publications No. 2002-231854 and No. 2002-270720).
- If, however, a passivation film is formed on a back face of a semiconductor substrate, the semiconductor device becomes thicker. Thus, thickness reduction of semiconductor devices remains difficult.
- Another problem with forming a passivation film on a back face of a semiconductor substrate is that the passivation film is often partly separated from the semiconductor substrate in a process of forming a semiconductor device. Especially, a passivation film having properties (e.g. rigidity) different from those of a semiconductor substrate is often separated from the semiconductor substrate in a so-called dicing process where the semiconductor substrate is cut into chips. Such partial separation of the passivation film also lowers production yield of semiconductor devices.
- It is a general object of the present invention to provide a novel and effective method of manufacturing a semiconductor device and a support structure for a semiconductor substrate to solve at least one problem described above.
- A specific object of the present invention is to provide a method of manufacturing a semiconductor device and a support structure for a semiconductor substrate that reduce manufacturing defects of semiconductor devices with thin semiconductor substrates so as to manufacture thin semiconductor devices.
- According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device that comprises a first step of grinding a second principle surface of a semiconductor substrate opposite to a first principle surface of the semiconductor substrate on which semiconductor device elements are formed, a second step of attaching a support structure configured to support the semiconductor substrate to the second principle surface after the first step, and a third step of detaching the semiconductor substrate from the support structure.
- With this method of manufacturing a semiconductor device, thin semiconductor devices can be stably manufactured while preventing damage to semiconductor substrates.
- It is preferable that the method of manufacturing a semiconductor device further comprise a dicing process of dicing the semiconductor substrate between the second step and the third step. With this method, thin semiconductor devices can be manufactured while preventing damage to semiconductor substrates in the dicing process.
- It is also preferable that the method of manufacturing a semiconductor device further comprise a sealing process of covering the first principle surface with a resin layer between the second step and the third step. This method can prevent damage to semiconductor devices in the sealing process.
- It is also preferable that the method of manufacturing a semiconductor device further comprise a wiring step of forming a wiring section on the first principle surface to be connected to the semiconductor device elements prior to the third step. With this method, higher density wiring can be formed.
- It is also preferable that, in the method of manufacturing a semiconductor device, the support structure comprise an adhesive layer formed to contact the semiconductor substrate and a supporting layer to support the adhesive layer, the adhesive layer comprising a first adhesive layer to adhere to the semiconductor substrate, a second adhesive layer configured to adhere to the supporting layer and having an adhesive force greater than an adhesive force of the first adhesive layer, and a base layer interposed between the first adhesive layer and the second adhesive layer. With this method, it is possible to detach the semiconductor substrate from the adhesive layer and to detach the adhesive layer from the supporting layer.
- According to another aspect of the present invention, there is provided a support structure for a semiconductor substrate, the support structure being adapted to adhere to the semiconductor substrate and comprising an adhesive layer formed to adhere to the semiconductor substrate, and a supporting layer to support the adhesive layer, wherein the adhesive layer comprises a first adhesive layer to adhere to the semiconductor substrate, a second adhesive layer configured to adhere to the supporting layer and having an adhesive force greater than an adhesive force of the first adhesive layer, and a base layer interposed between the first adhesive layer and the second adhesive layer.
- This support structure can protect thin semiconductor substrates from damage and warpage while supporting the semiconductor substrates. Moreover, this support structure allows a semiconductor substrate to be detached from an adhesive layer and allows the adhesive layer to be detached from a supporting layer.
- It is preferable that, in the support structure for a semiconductor substrate, the supporting layer include a Si wafer. If so, the supporting layer can be easily formed.
- According to these aspects of the present invention, it is possible to reduce manufacturing defects of semiconductor devices with thin semiconductor substrates so as to manufacture thin semiconductor devices.
-
FIG. 1 is a schematic cross-sectional view of a semiconductor device having a CSP structure; -
FIG. 2 is a schematic cross-sectional view of a support structure according to a first embodiment; and -
FIGS. 3A through 3P illustrate the method of manufacturing a semiconductor device according to a second embodiment. - The following description provides exemplary embodiments of the present invention with reference to the accompanying drawings.
-
FIG. 2 is a schematic cross-sectional view of asupport structure 200 for a semiconductor substrate according to a first embodiment. - Referring to
FIG. 2 , thesupport structure 200 of this embodiment is a type adapted to adhere to a semiconductor substrate, comprising anadhesive layer 202 formed to adhere to a semiconductor substrate and a supportinglayer 201 configured to support theadhesive layer 202. Theadhesive layer 202 includes a firstadhesive layer 202A that adherers to the semiconductor substrate and a secondadhesive layer 202B that has a greater adhesive force than the firstadhesive layer 202A and adheres to the supportinglayer 201. - A
base layer 202C made of PET (polyethylene terephthalate), PEN (polyethylene naphthalate) or the like is interposed between the firstadhesive layer 202A and the secondadhesive layer 202B. - When the
support structure 200 of this embodiment is attached to a back face of a semiconductor substrate, the firstadhesive layer 202A adheres to the back face of the semiconductor substrate. - In typical semiconductor device manufacturing processes, semiconductor substrates go through a so-called backgrinding process, where back faces of the semiconductor substrates are ground to reduce the thickness thereof. However, the semiconductor substrates having thickness thus reduced are likely to suffer warpage or damage. Such warpage and damage of semiconductor substrates can be prevented by attaching the
support structure 200 of this embodiment to the back faces of the semiconductor substrates after reducing the thickness of the semiconductor substrates in the backgrinding process. - The adhesive force of the first
adhesive layer 202A is adjusted to allow the semiconductor substrate attached to the firstadhesive layer 202A to be detached from thesupport structure 200. - Therefore, unlike conventional techniques, a passivation layer (or the supporting layer) of the semiconductor substrate does not remain on the back face of the finished semiconductor device. Thus, semiconductor substrates can be protected from warpage and damage in semiconductor device manufacturing processes such as a packaging process, while the thickness of the semiconductor devices is reduced.
- As mentioned previously, the adhesive force of the second
adhesive layer 202B is greater than the adhesive force of the firstadhesive layer 202A. Therefore, when the semiconductor substrate is detached from thesupport structure 200, theadhesive layer 202 remains on the supportinglayer 201 without being detached (separated) from the supportinglayer 201. - On the other hand, the
adhesive layer 202 including the firstadhesive layer 202A and the secondadhesive layer 202B can be detached (separated) from the supportinglayer 201 with a force greater than a force required for detaching the semiconductor substrate. More specifically, theadhesive layer 202 is separated from the supportinglayer 201 at the interface between the secondadhesive layer 202B and the supportinglayer 201. - This configuration allows the separated
adhesive layer 202 and the supportinglayer 201 to be reused individually. For example, if an impact is applied to thesupport structure 200 and therefore the supportinglayer 201 is damaged, theadhesive layer 202 may be separated from the damaged supportinglayer 201 to be reused with a new supportinglayer 201. If, on the other hand, theadhesive layer 202 is damaged or becomes unusable due to loss of adhesive force, the supportinglayer 201 may be separated from the damaged or unusableadhesive layer 202 to be reused with a newadhesive layer 202. - The
adhesive layer 202 is preferably formed such that the firstadhesive layer 202A and the secondadhesive layer 202B are attached one on each side of thebase layer 202C made of PET, PEN or the like. In this way, theadhesive layer 202 can be easily formed to have the upper face and the lower face with different adhesive forces and to be attachable to both the semiconductor substrate and the supportinglayer 201. - The supporting
layer 201 preferably has a predetermined rigidity to support the semiconductor substrate and to protect the semiconductor substrate from damage and warpage. - It is preferable to have heat resistance and chemical resistance to prevent damage, corrosion and etching in various processes performed in the semiconductor device manufacturing processes (packaging process). It is also preferable to have physical properties, such as the thermal expansion coefficient, that are the same as or similar to physical properties of the semiconductor substrate.
- The supporting
layer 201 is preferably formed of a Si wafer to meet the requirements described above. Particularly in the case where the semiconductor substrate supported by thesupport structure 200 is formed of a Si wafer, it is advantageous in that there is no need to process the support structure because thesupport structure 200 and the supported semiconductor substrate substantially have the same size and materials, as well as in that they are readily available. Moreover, costs can be lowered by using so-called reclaimed Si wafers, which are formed by etching or grinding faces on which semiconductor device elements and films are formed previously, as the supportinglayer 201. - It should be understood that glass plates or ceramic plates are applicable as the supporting
layer 201 if the above requirements are satisfied. - The following describes a method of manufacturing a semiconductor device using the support structure of this embodiment.
-
FIGS. 3A through 3P illustrate the method of manufacturing a semiconductor device step by step according to a second embodiment. - First, in a process shown in
FIG. 3A , asubstrate 101 on which semiconductor device elements are formed is prepared. For instance, thesubstrate 101 formed of a semiconductor substrate such as a Si wafer has adevice face 101A on which semiconductor device elements are formed. There is also formed anelectrode pad 102 made of Al or the like to be connected to a part of the device. The distance between thedevice face 101A of thesubstrate 101 and aback face 101B opposite to thedevice face 101A, i.e., a thickness dA of thesubstrate 101 is approximately 700 μm, although not limited to this thickness. - A
passivation layer 103 made of SiN or the like is formed to cover thedevice face 101A while leaving theelectrode pad 102 exposed through an opening. Apassivation layer 104 made of polyimide or the like is formed on thepassivation layer 103 while also leaving theelectrode pad 102 exposed through an opening. - Then in a process shown in
FIG. 3B , ametal adhesion layer 105 made of metal such as Cr and Ti is formed on theelectrode pad 102 and thepassivation layer 104 by sputtering. Further, aseed layer 106 made of Cu is formed on theadhesion layer 105 by sputtering. - Then in a process shown in
FIG. 3C , aphotoresist layer 107 is formed. A mask (not shown) is then formed on thephotoresist layer 107, and the photoresist is patterned by exposure and development. - A
wiring section 108 electrically connected to theelectrode pad 102 is formed where the photoresist is removed on the patterning. Thewiring section 108 is formed by Cu electrolytic plating using theseed layer 106 as a power supply layer. - Then in a process shown in
FIG. 3D , photoresist is removed by organic solvent or the like. - Then in a process shown in
FIG. 3E , aphotoresist layer 109 made of a photosensitive dry film or the like is attached to cover thewiring section 108 and theseed layer 106. Thephotoresist layer 109 is patterned by exposure and development using a mask. Awiring post 110 is formed upright on thewiring section 108 on which the photoresist is removed. Thewiring post 110 is formed by Cu electrolytic plating using theseed layer 106 as a power supply layer. - A
plating layer 111 having, for example, a Ni/Pd/Au structure is then formed on thewiring post 110 by electrolytic plating. Theplating layer 111 serves as a barrier (or serves to prevent diffusion) while improving adhesiveness. Preferably, an upper end face of theplating layer 111 is substantially flush with an upper end face of thephotoresist layer 109. - A thickness d1 of the
photoresist layer 109 is, for example, 100 μm, although not limited to this thickness. - Then in a process shown in
FIG. 3F , abackgrinding tape 112 made of resin or the like is attached on thephotoresist layer 109 and theplating layer 111. Thebackgrinding tape 112 has a thickness d2 of, for example, 150 μm. Thebackgrinding tape 112 serves as a passivation layer for thedevice face 101A, thewiring post 110, theplating layer 111 and thewiring section 108 in the following process of grinding theback face 101B of thesubstrate 101, and also makes it easy to hold (chuck) thesubstrate 101 in a grinding machine (not shown). - Then in a process shown in
FIG. 3G , theback face 101B of thesubstrate 101 is ground by the grinding machine so as to reduce the thickness of thesubstrate 101 to a thickness dB. The thickness is, for example, around 200 μm through 300 μm, although not limited to this thickness. - Then in a process shown in
FIG. 3H , thesubstrate 101 is attached to thesupport structure 200 ofFIG. 2 . InFIG. 3H , elements identical to those already described bear the same reference numbers and are not further discussed. - The
support structure 200 as shown inFIG. 2 comprises the supportinglayer 201 and theadhesive layer 202 formed thereon. Theadhesive layer 202 includes thebase layer 202C, and the firstadhesive layer 202A and the secondadhesive layer 202B attached on the upper face and the lower face, respectively, of thebase layer 202C. - In this process shown in
FIG. 3H , theback face 101B of theground substrate 101 is attached to the firstadhesive layer 202A of thesupport structure 200. The adhesive force of the firstadhesive layer 202A is adjusted to be smaller than the adhesive force of the secondadhesive layer 202B. Therefore, thesubstrate 101 can be easily detached from theadhesive layer 202 in the following process while preventing theadhesive layer 202 from being detached from the supportinglayer 201. - The supporting
layer 201 prevents warpage of thesubstrate 101 in this and following processes and also prevents damage to thesubstrate 101 to improve the production yield of the semiconductor device. - In the case where the supporting
layer 201 is formed of a Si wafer, the supportinglayer 201 and thesubstrate 101 have the same physical properties including thermal expansion coefficient. Therefore, the supportinglayer 201 expands and deforms to follow expansion and deformation of thesubstrate 101, and thus prevents cracking of thesubstrate 101. - A method of protecting or holding a semiconductor substrate with a back face thereof attached to a supporting structure as described in this process is especially effective in a semiconductor device manufacturing process including a backgrinding process for reducing the thickness of the substrate. Also, this method is suitable to meet the recent demands for higher performance and smaller semiconductor devices.
- As the
support structure 200 described in this embodiment is attached to thesubstrate 101 by the firstadhesive layer 202A, thesupport structure 200 can be detached from thesubstrate 101. Therefore, unlike a conventional passivation film formed, for example, on a back face of a substrate and which cannot be easily detached therefrom, thesupport structure 200 makes it possible to have thinner semiconductor devices with no increase in thickness. - Then in a process in
FIG. 3I , thebackgrinding tape 112 is removed. Then in a process shown inFIG. 3J , thephotoresist layer 109 is separated. - Then in a process shown in
FIG. 3K , the exposed part of theseed layer 106 is removed by wet etching, and then the part of theadhesion layer 105 exposed by wet etching is also removed by wet etching. Thus, theseed layer 106 and theadhesion layer 105 not covered by thewiring section 108 are removed by etching. - Then in a process shown in
FIG. 3L , a moldedresin layer 113 is formed to cover thepassivation layer 104, the wiring section 108 a side wall of thewiring post 110, and the molded resin is then heated and cured. It should be noted that an upper end of theplating layer 111 is exposed on the molded resin for electrical connection. - The
resin layer 113 may alternatively be formed by lamination of resin films. - Then in a process shown in
FIG. 3M , asolder bump 114 electrically connected to thewiring post 110 through theplating layer 111 is formed on theplating layer 111. - Then in a process shown in
FIG. 3N , thesupport structure 200 with thesubstrate 101 attached thereon is attached on adicing tape 115 having a dicing frame to be prepared for the following dicing process. In this process shown inFIG. 3N , production of a semiconductor device (semiconductor chip) is completed except the dicing process, i.e., a process of cutting thesubstrate 101 into chips. That is, there is obtained a semiconductor device (semiconductor chip) 100 that has thesubstrate 101, thedevice face 101A, theelectrode pad 102, thepassivation layer 103, theadhesion layer 105, theseed layer 106, thewiring section 108, thewiring post 110, theplating layer 111, the moldedresin layer 113 and thesolder bump 114. AlthoughFIG. 3N shows only onesemiconductor device 100, there areplural semiconductor devices 100 formed in an array along a plane in a direction that thesubstrate 101 extends. - Then in a process shown in
FIG. 30 , thesubstrate 101 is cut by a dicing technique to have theplural semiconductor devices 100 separated from each other. The dicing machine is preferably controlled such that only the moldedresin layer 113 through thesubstrate 101 are cut but not thesupport structure 200. - Then in a process shown in
FIG. 3P , the semiconductor devices (semiconductor chips) 100 separated from each other by the dicing technique are detached from thesupport structure 200 by separating theback face 101B of each of thesemiconductor devices 100 from the firstadhesive layer 202A using a dicing picker or the like, and thus the completedsemiconductor devices 100 are obtained. - In this way, the
substrate 101 is easily detached from thesupport structure 200, thereby preventing increase of thickness of thesemiconductor device 100 due to the use of thesupport structure 200. The thickness of thesemiconductor device 100 can be thus reduced. In conventional cases where a substrate and a passivation film attached on a back face of the substrate are diced together in a dicing process, defects such as partial separation or loss of the passivation film and chipping often occur. Such partial separation or loss of the passivation film, for instance, leads to variation of thickness and shape of semiconductor devices. This embodiment can prevent these problems and therefore enable stably manufacturing semiconductor devices having the same shape, that is, offers reproducibility of shape. - In this embodiment, in the processes after the
support structure 200 is attached to thesubstrate 101, cracking and warpage of thesubstrate 101 are prevented because thesubstrate 101 is supported or held by thesupport structure 200. - For example, the
support structure 200 serves to prevent cracking and warpage of thesubstrate 101 in the process of removing thebackgrinding tape 112 shown inFIG. 3I , the process of separating thephotoresist layer 109 shown inFIG. 3J , the process of etching theseed layer 106 and theadhesion layer 105 shown inFIG. 3K , and the process of forming thesolder bump 114 shown inFIG. 3M . - Especially, in the process of forming the molded resin shown in
FIG. 3L , it is possible to prevent damage to thesubstrate 101 due to a reaction force which might be applied to the layers including the molded resin formed on thesubstrate 101 while the molded resin is cured by heating. - Moreover, in the dicing process shown in
FIG. 30 , dicing operations are stably performed while preventing defects such as damage to and chipping in thesubstrate 101. - In the step of separating the
semiconductor device 100 from thesupport structure 200, thesemiconductor device 100 can be separated from theadhesive layer 202 without separating theadhesive layer 202 from the supportinglayer 201, because the adhesive force of the firstadhesive layer 202A is smaller than the adhesive force of the secondadhesive layer 202B. - The
adhesive layer 202 including the firstadhesive layer 202A and the secondadhesive layer 202B can be detached (separated) from the supportinglayer 201 with a force greater than a force required for detaching thesubstrate 101. More specifically, theadhesive layer 202 is separated from the supportinglayer 201 at the interface between the secondadhesive layer 202B and the supportinglayer 201. This configuration allows the separatedadhesive layer 202 and the supportinglayer 201 to be reused individually. - As the
support structure 200 of this embodiment can be reused, costs required for protection of thesubstrate 101 can be reduced. Furthermore, the supportinglayer 201 and theadhesive layer 202 are independently reusable, and therefore maintenance cost is also reduced. - Although above embodiments exemplify the method of manufacturing a semiconductor device having a CSP structure, it should be understood that the present invention is not limited thereto. The present invention is applicable to other methods of manufacturing a semiconductor device having a so-called backgrinding process of grinding a back face of a semiconductor substrate to reduce the thickness of the semiconductor substrate. If the present invention is applied to these methods, the methods make it possible to improve production yield of semiconductor devices by preventing cracking and warpage of substrates, and allow a substrate to be detached from a support structure and therefore enable reduction of thickness of semiconductor devices as with the method of manufacturing a semiconductor device having a CSP structure.
- While the present invention has been described in terms of preferred embodiments, it will be apparent to those skilled in the art that variations and modifications may be made without departing from the scope of the invention as set forth in the accompanying claims.
- The present application is based on Japanese Priority Application No. 2004-159871 filed on May 28, 2004, with the Japanese Patent Office, the entire contents of which are hereby incorporated by reference.
Claims (7)
1. A method of manufacturing a semiconductor device, comprising:
a first step of grinding a second principle surface of a semiconductor substrate opposite to a first principle surface of the semiconductor substrate on which semiconductor device elements are formed;
a second step of attaching a support structure configured to support the semiconductor substrate to the second principle surface after the first step; and
a third step of detaching the semiconductor substrate from the support structure.
2. The method of manufacturing a semiconductor device as claimed in claim 1 , further comprising:
a dicing process of dicing the semiconductor substrate between the second step and the third step.
3. The method of manufacturing a semiconductor device as claimed in claim 1 , further comprising:
a sealing process of covering the first principle surface with a resin layer between the second step and the third step.
4. The method of manufacturing a semiconductor device as claimed in claim 1 , further comprising:
a wiring step of forming a wiring section on the first principle surface to be connected to the semiconductor device elements prior to the third step.
5. The method of manufacturing a semiconductor device as claimed in claim 1 ,
wherein the support structure comprises:
an adhesive layer formed to contact with the semiconductor substrate; and
a supporting layer to support the adhesive layer;
the adhesive layer including
a first adhesive layer to adhere to the semiconductor substrate;
a second adhesive layer to adhere to the supporting layer, having an adhesive force greater than an adhesive force of the first adhesive layer; and
a base layer interposed between the first adhesive layer and the second adhesive layer.
6. A support structure for a semiconductor substrate, adapted to adhere to the semiconductor substrate, comprising;
an adhesive layer formed to adhere to the semiconductor substrate; and
a supporting layer to support the adhesive layer;
wherein the adhesive layer includes
a first adhesive layer to adhere to the semiconductor substrate;
a second adhesive layer to adhere to the supporting layer, having an adhesive force greater than an adhesive force of the first adhesive layer; and
a base layer interposed between the first adhesive layer and the second adhesive layer.
7. The support structure for a semiconductor substrate as claimed in claim 6 , the supporting layer includes a Si wafer.
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US20150236217A1 (en) * | 2014-02-17 | 2015-08-20 | Lg Innotek Co., Ltd. | Light emitting apparatus |
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Also Published As
Publication number | Publication date |
---|---|
JP2005340655A (en) | 2005-12-08 |
KR20060046191A (en) | 2006-05-17 |
CN1702839A (en) | 2005-11-30 |
CN1702839B (en) | 2010-05-05 |
US20060128063A1 (en) | 2006-06-15 |
TW200539298A (en) | 2005-12-01 |
US7459343B2 (en) | 2008-12-02 |
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