US20050217583A1 - Wafer chuck having thermal plate with interleaved heating and cooling elements - Google Patents

Wafer chuck having thermal plate with interleaved heating and cooling elements Download PDF

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Publication number
US20050217583A1
US20050217583A1 US11/146,959 US14695905A US2005217583A1 US 20050217583 A1 US20050217583 A1 US 20050217583A1 US 14695905 A US14695905 A US 14695905A US 2005217583 A1 US2005217583 A1 US 2005217583A1
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Prior art keywords
control apparatus
thermal control
plane
cooling
heating element
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Abandoned
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US11/146,959
Inventor
Kenneth Cole
William Stone
Douglas Olsen
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Temptronic Corp
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Temptronic Corp
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Priority to US11/146,959 priority Critical patent/US20050217583A1/en
Publication of US20050217583A1 publication Critical patent/US20050217583A1/en
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2886Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • a workpiece chuck can be used to hold workpieces such as semiconductor wafers during processing and testing. Because integrated circuits formed in a wafer under test are commonly tested over temperature, the workpiece chuck can include a temperature control system for controlling the temperature of the wafer during testing. As integrated circuits become smaller and more densely integrated, positioning tolerances for testing systems such as wafer probers decrease. With very small positioning tolerances, it is very important that the chuck supporting the wafer during testing be mechanically stable. This requirement is especially challenging in a temperature-control chuck where the chuck must maintain mechanical and electrical stability over a wide range of temperatures. At temperature extremes, particularly at high temperatures, conventional wafer chucks tend to distort due to thermal expansion and contraction and the integrity of the materials of which the chucks are constructed. For example, chucks made of softer materials will tend to distort at high temperature. This problem is exacerbated by the increasing mechanical loads on the chuck introduced by the test system, i.e., the wafer prober.
  • the present invention is directed to various aspects of a workpiece chuck which overcome drawbacks of conventional chucks to provide a chuck with improved mechanical and electrical stability.
  • a thermal control apparatus or thermal plate assembly, and method, which can be used to control temperature in a workpiece chuck.
  • the thermal control apparatus includes a heating element and a cooling element.
  • the heating element is disposed in a heating plane
  • the cooling element is disposed in a cooling plane.
  • the heating plane and the cooling plane can be coplanar, i.e., they are the same plane.
  • the thermal plate assembly of the invention can be a layer in the workpiece chuck. Because the heating and cooling elements occupy the same horizontal plane of the chuck, the heating and cooling are uniform across the top surface of the chuck where the workpiece, i.e., wafer, is supported. Also, because the heating and cooling elements are coplanar, substantial distortion and warping of the chuck and workpiece over temperature are eliminated.
  • the heating element can include an electrical resistive heating coil element.
  • the heating coil element can be disposed in the heating plane in a coiled configuration.
  • the cooling element can include one or more hollow tubes for circulating a temperature-controlled fluid through the thermal plate assembly.
  • the circulating tubes can be disposed in the cooling plane in a coiled configuration.
  • the heating and cooling elements are spatially interleaved with each other.
  • the interleaved nature of the heating and cooling elements also provides more uniform heating and cooling of the chuck and, therefore, more uniform temperature across the surface of the wafer. Also, warping and other distortion of the chuck over temperature are substantially eliminated, such that the chuck can hold the wafer extremely flat over temperature.
  • warping and other distortions over temperature are further reduced by the selection of the location of the heating and cooling plane within the thermal plate assembly.
  • the heating and cooling planes are located in a center plane of the thermal plate assembly, i.e., the plane that is equidistant from the top and bottom surfaces of the thermal plate assembly. With the heating and cooling planes located at the vertical center of the thermal plate assembly, distortions caused by doming and/or dishing of the thermal plate assembly are substantially eliminated. Again, with the reduction in chuck distortion over temperature, the wafer can be held flat over temperature.
  • the thermal plate assembly of the invention is made from a cast material, which, in one particular embodiment, is aluminum.
  • the casting of the housing provides the thermal plate assembly with improved mechanical rigidity and stability over temperature.
  • the housing casting can be stress relieved such as by heat treating at predetermined manufacturing steps. For example, stress relieving can be performed both before and after finish machining of the housing.
  • the stress relief provides the housing with more mechanical stability over temperature.
  • the housing casting can be formed with the tubes for circulating the cooling fluid. With the stress relief procedure, even more mechanical stability is provided.
  • the invention is directed to a workpiece chuck capable of implementing interchangeable top surface assemblies.
  • the workpiece chuck of the invention includes a lower support and the thermal plate assembly on the lower support.
  • the top of the thermal plate assembly includes a mount apparatus capable of holding multiple types of top surface assemblies, which are used to hold the workpiece/wafer to the chuck.
  • This configuration provides the chuck of the invention with flexibility according to the setting in which the chuck is being used. For example, one type of top surface assembly may be required where the test being performed requires the chuck to be able to absorb a large amount of power. In another test, the top surface assembly may be required to provide low electrical capacitance, high voltage or high electrical isolation performance. In still another test, the top surface assembly may be required to provide for very low signal leakage. In each of these tests, the top surface assembly may be fabricated differently to provide optimal performance under the specific testing parameters. In a conventional chuck system, this would require the user to obtain several different chucks, one for each test type.
  • the thermal plate assembly of the invention provides a universal type mount which can accommodate all of the various top surface assemblies.
  • the user need only have a single thermal plate assembly. The user can then purchase only the top surface assemblies required for the tests to be performed. This results in considerable cost savings to the user.
  • the invention is directed to an approach to eliminating the negative effects resulting from the relative movement of layers of the workpiece chuck over temperature.
  • two adjacent chuck layers have different thermal expansion coefficients, they tend to rub each other over temperature. This can cause abrasion of the surfaces which can degrade chuck performance.
  • a top surface assembly made of a hard abrasive ceramic material is located adjacent to the cast aluminum housing of the thermal plate assembly.
  • one or more adjacent surfaces can be coated with a hard coating, such as hard anodize.
  • the invention includes a lower support and the thermal plate assembly mounted on the lower support.
  • An upper support e.g., top surface assembly, by which the workpiece can be mounted to the chuck, is mounted over the thermal plate assembly.
  • a hard coating layer a hard anodize layer for example, is adhered to a surface and interposed between the thermal plate assembly and the upper support assembly.
  • FIG. 1 contains a schematic cross-sectional diagram of a thermal plate assembly in which the heating and cooling elements are not in the same plane.
  • FIG. 2 contains a schematic cross-sectional diagram of a thermal plate assembly in which the heating and cooling elements are located in the same plane at the center line of the thermal plate assembly, in accordance with one embodiment of the invention.
  • FIG. 3 contains a schematic cross-sectional diagram of a thermal plate assembly in which the heating and cooling elements are in the same plane located below the center line of the thermal plate assembly, to illustrate dishing on the top surface of the thermal plate assembly.
  • FIG. 4 contains a schematic cross-sectional diagram of a thermal plate assembly in which the heating and cooling elements are in the same plane located above the center line of the thermal plate assembly, to illustrate doming on the top surface of the thermal plate assembly.
  • FIG. 5 contains a schematic top plan view of one embodiment of the thermal plate assembly of the invention, illustrating the interleaved configuration of the heating and cooling elements.
  • FIG. 6 contains a schematic cross-sectional view of one embodiment of a heater with multiple heating elements within a single sheath, in accordance with the present invention.
  • FIG. 7 contains a schematic cross-sectional view of one embodiment of a workpiece chuck including the thermal plate assembly of the invention.
  • FIGS. 8A through 8C contain schematic cross-sectional view of various types of top surface assemblies, in accordance with the invention.
  • FIG. 9 contains a schematic exploded view of one embodiment of the thermal plate assembly of the invention with the mounting approach used to accommodate multiple interchangeable types of top surface assemblies.
  • FIG. 10 contains a schematic partial cross-sectional view of a portion of the workpiece chuck according to the invention.
  • the present invention is directed to and is applicable in temperature-controlled workpiece chucks of the type described in, for example, U.S. Pat. No. 6,019,164, issued Feb. 1, 2000, entitled, “Workpiece Chuck,” assigned to Temptronic Corporation, and incorporated herein in its entirety by reference; U.S. Pat. No. 6,073,681, issued Jun. 13, 2000, entitled, “Workpiece Chuck,” assigned to Temptronic Corporation, and incorporated herein in its entirety by reference; and copending U.S. patent application Ser. No. 09/473,099, filed on Dec. 28, 1999, entitled, “Workpiece Chuck,” assigned to Temptronic Corporation, and incorporated herein in its entirety by reference.
  • chucks include a heater for heating the wafer under test and a heat sink for removing heat to cool the wafer.
  • the heater and heat sink are formed in one integral assembly referred to herein as a thermal plate or thermal plate assembly.
  • the housing of the thermal plate assembly is made of a cast material such as a metal.
  • the cast metal provides mechanical strength, rigidity and stability over temperature.
  • the cast material can be aluminum. It can be pure aluminum or an alloy of aluminum or any material which provides low thermal distortion, i.e., distortion over temperature due to temperature effects.
  • the heater includes one or more electrical resistive heating elements coiled in a plane within the thermal plate cast housing.
  • the heater can include multiple heating elements contained within a sheath. Because of the electrical current flowing through the heater elements during heating, the heater elements are highly isolated from the remainder of the thermal plate assembly and the chuck to prevent interference with the testing being performed. In one particular embodiment, the isolation of the heating elements is over 100 Gigohms.
  • the heat sink portion of the thermal plate can include one or more tubes coiled in a plane within the thermal plate housing for circulating a temperature-controlled fluid through the plate.
  • the thermal plate is configured as a layer in the chuck.
  • the thermal plate is located between the base of the chuck by which the chuck is mounted on a host machine, e.g., a wafer prober, and the top surface assembly on which the wafer under test is mounted. Heat from the heating elements is conducted through the plate casting up to the wafer to heat the wafer. When cooling the wafer, heat is conducted down through the plate casting and is carried away by the circulating fluid.
  • the combination of the heating elements and the circulating fluid allow the temperature of the chuck and the wafer it supports to be very precisely controlled.
  • the temperature of the chuck and wafer can be controlled via the thermal plate in accordance with copending U.S. patent application Ser. No. 09/001,887, filed on Dec. 31, 1997, entitled, “Temperature Control System for a Workpiece Chuck,” assigned to Temptronic Corporation, and incorporated herein in its entirety by reference.
  • FIGS. 1-4 are schematic cross-sectional views of thermal plates illustrating possible layouts of the heating elements and cooing tubes.
  • FIG. 1 the general case in which the heaters and cooling tubes do not lie in the same plane is illustrated. Specifically, the case in which the heater 12 is located above the cooling tubes 14 within the casting 10 is illustrated. In this case, because of thermal expansion and contraction effects, when the heater 12 and/or the cooling tubes 14 are active, the housing 10 will tend to bow up in the middle, resulting in distortion in the chuck and the wafer.
  • FIG. 2 illustrates the configuration in accordance with the invention in which the heaters 12 and cooling tubes 14 are disposed in the same plane. In this configuration, the distortions due to the heaters 12 and tubes 14 being in different planes are eliminated.
  • the plane in which the heaters 12 and tubes 14 are disposed be located along the center of the housing 10 in the vertical dimension. That is, the plane in which they are disposed should include the horizontal center line 16 shown in FIG. 2 . It is recognized that if the heaters 12 and tubes 14 are not located at the center of the thermal plate 10 , then distortions result as shown in FIGS. 3 and 4 .
  • FIG. 3 illustrates the situation in which the heaters 12 and tubes 14 are located below the casting center line 16 . In this case, the cast housing 10 bows down when heat is applied, resulting in a dish shape at the top surface of the chuck and the wafer.
  • FIG. 4 illustrates the situation in which the heaters 12 and tubes 14 are located above the casting center line 16 .
  • the cast housing 10 bows up when heat is applied, resulting in a dome shape at the top surface of the chuck and the wafer.
  • the housing 10 bows down, resulting in a dish shape at the top surface of the chuck and the wafer.
  • the plane in which the heaters 12 and tubes 14 are located be at the center line of the cast housing 10 .
  • FIG. 5 is a schematic top plan view of the thermal plate 10 of the invention with heating elements 12 and coolant circulating tube 14 . Because the heaters 12 and cooling tube 14 are coiled in the same plane, they are interleaved with each other as shown.
  • the heater 12 is electrically connected to a power source (not shown) via a connector 18 and wires 20 . As described below in connection with FIG. 6 , the heater 12 can actually include multiple heating elements enclosed in a sheath 22 .
  • the cooling fluid is circulated through the thermal plate 10 by tube 14 .
  • the fluid enters the plate 10 at an inlet port 24 , flows in a spiral fashion through the coiled tube 14 to the center of the plate 10 and flows back out to the edge of the plate 10 in a spiral fashion in the coiled tube 14 .
  • the fluid exits the plate 10 at an outlet port 26 .
  • Both the heater 12 and cooling tube 14 are coiled in a spiral fashion within the plate 10 to provide efficient and uniform heat transfer to and from the chuck and wafer. This ensures highly accurate and uniform temperature setting and wafer testing.
  • FIG. 6 is a schematic cross-sectional view of one embodiment of a heater 12 in accordance with the invention.
  • the heater 12 actually includes multiple, four in this case, electrical resistive heating elements 40 which are enclosed in a rigid or flexible and formable sheath enclosure 42 .
  • the sheath 42 is formable such that the coiled configuration can be obtained.
  • the heating elements 40 are supported and insulated from each other within the sheath 42 by an insulating and supporting material 44 .
  • the insulating and supporting material 44 achieves extremely high electrical isolation of the heating elements 40 from each other, the sheath, which is electrically connected to the thermal plate assembly, and the rest of the chuck.
  • the insulating and supporting material 44 is made from highly compressed insulating material such as magnesium oxide.
  • the heater assembly 12 achieves over 100 Gigohms of isolation between the conductive elements and the sheath 42 .
  • the heater 12 includes hermetically sealed ends 48 and insulated heater leads 46 at one or both ends for attachment to a power source (not shown). Where the power source is connected at only one end, leads at the opposite end of the heater 12 can be connected together. In FIG. 6 , these connections 47 are shown in phantom at the right end of the heater 12 . In this case, the left set of leads 46 can be connected to the power source to create two heater elements.
  • steps are taken during fabrication of the thermal plate cast housing to ensure that distortion in the thermal plate and chuck due to thermal effects are eliminated and that the entire system exhibits superior thermal and mechanical performance.
  • the aluminum casting is heat treated for stress relief after casting and before finish machining operations are performed.
  • the casting is heat treated for stress relief again after finish machining such that distortion in the finished casting due to thermal effects is eliminated.
  • the heating and cooling elements are cast into the aluminum housing, which be cylindrical or non-circular.
  • the heating and cooling coils are also stress relieved.
  • the thermal plate 10 serves as a layer of the wafer chuck 50 .
  • the thermal plate 10 is mounted over a chuck base 11 by which the chuck 50 is mounted on the host machine.
  • the top surface assembly 52 of the chuck 50 is mounted on the top surface of the thermal plate 10 .
  • the top surface assembly 52 supports and holds the wafer 5 for processing.
  • the top surface assembly 52 is held on the top of the thermal plate 10 by vacuum, and the wafer 5 is held on the top surface assembly 52 by vacuum.
  • vacuum input ports 15 and 17 are provided in the thermal plate 10 . Vacuum input port 15 is coupled to vacuum channels which convey vacuum to the top of the thermal plate 10 .
  • a vacuum pattern including vacuum grooves or channels is formed in the top of the thermal plate 10 to distribute vacuum over the top of the thermal plate to hold the top surface assembly 52 to the thermal plate 10 .
  • Vacuum input port 17 is coupled to vacuum channels which convey vacuum up through the top surface assembly 52 to its top surface.
  • a vacuum pattern including vacuum grooves or channels is formed in the top of the surface assembly 52 to distribute vacuum over the top of the surface assembly to hold the wafer 5 to the top surface assembly 52 .
  • the configuration of the top surface assembly 52 can be selected based upon the type of test being performed on the wafer 5 . Different surface assemblies are used for different tests. In accordance with the invention, different top surface assemblies 52 can be interchanged according to the test being performed.
  • the thermal plate 10 is configured to accommodate each type of top surface assembly 52 , and the surface assemblies 52 are all made to be mounted on the thermal plate 10 . Thus, the thermal plate 10 serves as a temperature-controlled vacuum mount platform having a unique adaptability to multiple testing performance requirements.
  • FIGS. 8A through 8C illustrate three different types of top surface assemblies 52 A through 52 C, respectively, which can be attached to the top of the thermal plate 10 for different tests.
  • one type of test being performed may require that high device power be absorbed by the surface 52 , which would require that the surface 52 include a very thermally conductive material.
  • the top surface assembly 52 A in FIG. 8A can be used.
  • Surface assembly 52 A includes a layer 60 of conductive material such as copper or aluminum covered by a plated or sputtered layer 62 of a conductive material such as gold, nickel or other such material.
  • Another test may have very low electrical capacitance, high voltage or high isolation requirements. In such a case, the surface 52 B of FIG. 8B can be used.
  • Surface 52 B includes an insulating dielectric layer 64 , typically a ceramic material, covered by a plated or sputtered layer 62 of a conductive material such as gold, nickel or other such material.
  • a conductive material such as gold, nickel or other such material.
  • FIG. 8C In another testing application, there may be a need for very low electrical signal leakage. This would require the surface assembly 52 C of FIG. 8C .
  • Surface assembly 52 C includes a lower insulator layer 70 on which is mounted a conductive guard layer 68 .
  • An upper insulator layer 66 is positioned over the guard layer 68 , and a plated or sputtered layer 62 of a conductive material such as gold, nickel or other such material is formed on the upper insulator 66 .
  • the top conductive layer 62 can be held by vacuum as described below in connection with FIG. 9 .
  • the guard layer 68 is driven with an excitation signal during testing to minimize test signal leakage due to isolation effects.
  • Each of the surfaces 52 A through 52 C is made to be of the same total thickness X such that they do not introduce a height difference when they are mounted on the thermal plate 10 . This is true regardless of the number of layers in the assembly 52 .
  • Locating pins are provided between the thermal plate 10 and the surface assembly 52 as an aid in mounting the surface 52 on the plate 10 .
  • the locating pins also serve to hold the components together when vacuum is not present.
  • Mechanical latches can also be used to secure the components when vacuum is removed.
  • FIG. 9 is a schematic exploded view of the surface 52 C of FIG. 8C .
  • the top of the thermal plate includes a vacuum pattern 71 used to hold the lower insulator layer 70 .
  • the reference “V” refers to the vacuum grooves.
  • the lower insulator 70 includes a vacuum pattern 73 used to hold the guard layer 68 .
  • Vacuum passes through vacuum holes in the guard layer 68 up to and through the upper insulator layer 66 where a vacuum pattern 75 on both sides of layer 66 is used both to hold a top layer 62 and to hold layer 66 to layer 68 .
  • FIG. 9 also illustrates the locating pins 7 used to hold the layers in position.
  • FIG. 10 is a schematic partial cross-section of the thermal plate 10 with the surface assembly 52 C of FIG. 9 mounted thereon.
  • FIG. 10 illustrates the vacuum ports 15 and 17 and distribution of the vacuum to the layers of the surface assembly 52 C.
  • the thermal plate 10 and other components of the chuck of the invention can also include a surface finish that has both high durability and electrical isolation characteristics.
  • the thermal plate and the top surface assembly 52 have different thermal expansion coefficients, the two components will move relative to each other as temperature is changed. As a result, abrasion occurs at the interface between the two components.
  • the surface 52 is a very hard ceramic material and the thermal plate is much softer material such as cast aluminum. The softer thermal plate 10 is scratched and abraded. This is especially true at high temperatures, where the ceramic and aluminum tend to bond to each other.
  • a hard surface covering such as a hard anodize plating, is provided on the top surface of the thermal plate 10 to eliminate the abrasion and bonding between the thermal plate 10 and the surface assembly 52 .
  • the bottom of the surface assembly 52 is metal.
  • the hard anodize coating can be applied to either the top surface of the thermal plate 10 or the bottom surface of the surface assembly 52 .
  • the anodize coating provides electrical isolation between the thermal plate 10 and the surface assembly.
  • the hard anodize coating is applied to the top of the thermal plate 10 .
  • a conductive layer is bonded to the anodized layer.
  • a final layer of anodize is applied to the top of the conductive layer.
  • the conductive top surface layer 62 of the surface assembly 52 is then mounted on the final anodize layer.
  • the conductive layer between the two anodize layers can be used as a guard layer.
  • the electrically conductive guard plate is insulated by the layers of anodize from both the thermal plate 10 and the surface assembly 52 . Therefore, this anodize-conductor-anodize-conductor structure can be used instead of the top surface assembly 52 C of FIG. 8C .
  • the guard layer can be made inexpensively and quickly by anodizing a thin sheet of conductive material such as aluminum on both sides or all over its exterior.

Abstract

A workpiece chuck includes a thermal plate assembly which includes both heating and cooling capability. The heating element can be a resistive heater in a coiled configuration disposed in a plane. The cooling can be performed via a cooling fluid circulated through cooling tubes which are also disposed in a coiled configuration in a plane. The plane of the heating element and the cooling tubes can be the same plane, and that plane can be a center plane of the thermal plate assembly. By locating the heating and cooling in the same plane, uniform heating and cooling are achieved. Also, by locating the heating element and cooling tubes in the center of the thermal plate, distortions such as doming and dishing in the thermal plate are eliminated such that the wafer can be held extremely flat on the chuck. The heating element and cooling tubes are coiled in an interleaved fashion to provide uniform heating and cooling while allowing them to simultaneously occupy the same plane.

Description

    RELATED APPLICATIONS
  • This application is a continuation of U.S. patent application Ser. No. 10/465,716, filed Jun. 19, 2003, which is a continuation of U.S. patent application Ser. No. 09/900,285, filed Jul. 6, 2001, now U.S. Pat. No. 6,700,099, which is based on U.S. Provisional Patent Application Ser. No. 60/217,036, filed on Jul. 10, 2000. The contents of all of these applications and patent are incorporated herein in their entirety by reference.
  • BACKGROUND OF THE INVENTION
  • A workpiece chuck can be used to hold workpieces such as semiconductor wafers during processing and testing. Because integrated circuits formed in a wafer under test are commonly tested over temperature, the workpiece chuck can include a temperature control system for controlling the temperature of the wafer during testing. As integrated circuits become smaller and more densely integrated, positioning tolerances for testing systems such as wafer probers decrease. With very small positioning tolerances, it is very important that the chuck supporting the wafer during testing be mechanically stable. This requirement is especially challenging in a temperature-control chuck where the chuck must maintain mechanical and electrical stability over a wide range of temperatures. At temperature extremes, particularly at high temperatures, conventional wafer chucks tend to distort due to thermal expansion and contraction and the integrity of the materials of which the chucks are constructed. For example, chucks made of softer materials will tend to distort at high temperature. This problem is exacerbated by the increasing mechanical loads on the chuck introduced by the test system, i.e., the wafer prober.
  • SUMMARY OF THE INVENTION
  • The present invention is directed to various aspects of a workpiece chuck which overcome drawbacks of conventional chucks to provide a chuck with improved mechanical and electrical stability. According to a first aspect of the invention, there is provided a thermal control apparatus, or thermal plate assembly, and method, which can be used to control temperature in a workpiece chuck. The thermal control apparatus includes a heating element and a cooling element. The heating element is disposed in a heating plane, and the cooling element is disposed in a cooling plane. The heating plane and the cooling plane can be coplanar, i.e., they are the same plane.
  • The thermal plate assembly of the invention can be a layer in the workpiece chuck. Because the heating and cooling elements occupy the same horizontal plane of the chuck, the heating and cooling are uniform across the top surface of the chuck where the workpiece, i.e., wafer, is supported. Also, because the heating and cooling elements are coplanar, substantial distortion and warping of the chuck and workpiece over temperature are eliminated.
  • The heating element can include an electrical resistive heating coil element. The heating coil element can be disposed in the heating plane in a coiled configuration.
  • The cooling element can include one or more hollow tubes for circulating a temperature-controlled fluid through the thermal plate assembly. The circulating tubes can be disposed in the cooling plane in a coiled configuration.
  • To facilitate locating both the heating element and the cooling element in the same plane in coiled configurations, the heating and cooling elements are spatially interleaved with each other. The interleaved nature of the heating and cooling elements also provides more uniform heating and cooling of the chuck and, therefore, more uniform temperature across the surface of the wafer. Also, warping and other distortion of the chuck over temperature are substantially eliminated, such that the chuck can hold the wafer extremely flat over temperature.
  • In one embodiment, warping and other distortions over temperature are further reduced by the selection of the location of the heating and cooling plane within the thermal plate assembly. In this embodiment, the heating and cooling planes are located in a center plane of the thermal plate assembly, i.e., the plane that is equidistant from the top and bottom surfaces of the thermal plate assembly. With the heating and cooling planes located at the vertical center of the thermal plate assembly, distortions caused by doming and/or dishing of the thermal plate assembly are substantially eliminated. Again, with the reduction in chuck distortion over temperature, the wafer can be held flat over temperature.
  • In one embodiment, the thermal plate assembly of the invention is made from a cast material, which, in one particular embodiment, is aluminum. The casting of the housing provides the thermal plate assembly with improved mechanical rigidity and stability over temperature. The housing casting can be stress relieved such as by heat treating at predetermined manufacturing steps. For example, stress relieving can be performed both before and after finish machining of the housing. The stress relief provides the housing with more mechanical stability over temperature. Also, the housing casting can be formed with the tubes for circulating the cooling fluid. With the stress relief procedure, even more mechanical stability is provided.
  • In another aspect, the invention is directed to a workpiece chuck capable of implementing interchangeable top surface assemblies. In accordance with this aspect, the workpiece chuck of the invention includes a lower support and the thermal plate assembly on the lower support. The top of the thermal plate assembly includes a mount apparatus capable of holding multiple types of top surface assemblies, which are used to hold the workpiece/wafer to the chuck.
  • This configuration provides the chuck of the invention with flexibility according to the setting in which the chuck is being used. For example, one type of top surface assembly may be required where the test being performed requires the chuck to be able to absorb a large amount of power. In another test, the top surface assembly may be required to provide low electrical capacitance, high voltage or high electrical isolation performance. In still another test, the top surface assembly may be required to provide for very low signal leakage. In each of these tests, the top surface assembly may be fabricated differently to provide optimal performance under the specific testing parameters. In a conventional chuck system, this would require the user to obtain several different chucks, one for each test type. However, in accordance with this aspect of the invention, the thermal plate assembly of the invention provides a universal type mount which can accommodate all of the various top surface assemblies. As a result, the user need only have a single thermal plate assembly. The user can then purchase only the top surface assemblies required for the tests to be performed. This results in considerable cost savings to the user.
  • In another aspect, the invention is directed to an approach to eliminating the negative effects resulting from the relative movement of layers of the workpiece chuck over temperature. When two adjacent chuck layers have different thermal expansion coefficients, they tend to rub each other over temperature. This can cause abrasion of the surfaces which can degrade chuck performance. This is especially true in one particular example where a top surface assembly made of a hard abrasive ceramic material is located adjacent to the cast aluminum housing of the thermal plate assembly. To reduce these effects, one or more adjacent surfaces can be coated with a hard coating, such as hard anodize.
  • In accordance with this aspect, the invention includes a lower support and the thermal plate assembly mounted on the lower support. An upper support, e.g., top surface assembly, by which the workpiece can be mounted to the chuck, is mounted over the thermal plate assembly. A hard coating layer, a hard anodize layer for example, is adhered to a surface and interposed between the thermal plate assembly and the upper support assembly.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The foregoing and other objects, features and advantages of the invention will be apparent from the following more particular description of preferred embodiments of the invention, as illustrated in the accompanying drawings in which like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention.
  • FIG. 1 contains a schematic cross-sectional diagram of a thermal plate assembly in which the heating and cooling elements are not in the same plane.
  • FIG. 2 contains a schematic cross-sectional diagram of a thermal plate assembly in which the heating and cooling elements are located in the same plane at the center line of the thermal plate assembly, in accordance with one embodiment of the invention.
  • FIG. 3 contains a schematic cross-sectional diagram of a thermal plate assembly in which the heating and cooling elements are in the same plane located below the center line of the thermal plate assembly, to illustrate dishing on the top surface of the thermal plate assembly.
  • FIG. 4 contains a schematic cross-sectional diagram of a thermal plate assembly in which the heating and cooling elements are in the same plane located above the center line of the thermal plate assembly, to illustrate doming on the top surface of the thermal plate assembly.
  • FIG. 5 contains a schematic top plan view of one embodiment of the thermal plate assembly of the invention, illustrating the interleaved configuration of the heating and cooling elements.
  • FIG. 6 contains a schematic cross-sectional view of one embodiment of a heater with multiple heating elements within a single sheath, in accordance with the present invention.
  • FIG. 7 contains a schematic cross-sectional view of one embodiment of a workpiece chuck including the thermal plate assembly of the invention.
  • FIGS. 8A through 8C contain schematic cross-sectional view of various types of top surface assemblies, in accordance with the invention.
  • FIG. 9 contains a schematic exploded view of one embodiment of the thermal plate assembly of the invention with the mounting approach used to accommodate multiple interchangeable types of top surface assemblies.
  • FIG. 10. contains a schematic partial cross-sectional view of a portion of the workpiece chuck according to the invention.
  • DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION
  • The present invention is directed to and is applicable in temperature-controlled workpiece chucks of the type described in, for example, U.S. Pat. No. 6,019,164, issued Feb. 1, 2000, entitled, “Workpiece Chuck,” assigned to Temptronic Corporation, and incorporated herein in its entirety by reference; U.S. Pat. No. 6,073,681, issued Jun. 13, 2000, entitled, “Workpiece Chuck,” assigned to Temptronic Corporation, and incorporated herein in its entirety by reference; and copending U.S. patent application Ser. No. 09/473,099, filed on Dec. 28, 1999, entitled, “Workpiece Chuck,” assigned to Temptronic Corporation, and incorporated herein in its entirety by reference.
  • These chucks include a heater for heating the wafer under test and a heat sink for removing heat to cool the wafer. In accordance with the present invention, the heater and heat sink are formed in one integral assembly referred to herein as a thermal plate or thermal plate assembly. In one embodiment, the housing of the thermal plate assembly is made of a cast material such as a metal. The cast metal provides mechanical strength, rigidity and stability over temperature. The cast material can be aluminum. It can be pure aluminum or an alloy of aluminum or any material which provides low thermal distortion, i.e., distortion over temperature due to temperature effects.
  • The heater includes one or more electrical resistive heating elements coiled in a plane within the thermal plate cast housing. The heater can include multiple heating elements contained within a sheath. Because of the electrical current flowing through the heater elements during heating, the heater elements are highly isolated from the remainder of the thermal plate assembly and the chuck to prevent interference with the testing being performed. In one particular embodiment, the isolation of the heating elements is over 100 Gigohms. The heat sink portion of the thermal plate can include one or more tubes coiled in a plane within the thermal plate housing for circulating a temperature-controlled fluid through the plate.
  • The thermal plate is configured as a layer in the chuck. In general, the thermal plate is located between the base of the chuck by which the chuck is mounted on a host machine, e.g., a wafer prober, and the top surface assembly on which the wafer under test is mounted. Heat from the heating elements is conducted through the plate casting up to the wafer to heat the wafer. When cooling the wafer, heat is conducted down through the plate casting and is carried away by the circulating fluid. Thus, the combination of the heating elements and the circulating fluid allow the temperature of the chuck and the wafer it supports to be very precisely controlled. The temperature of the chuck and wafer can be controlled via the thermal plate in accordance with copending U.S. patent application Ser. No. 09/001,887, filed on Dec. 31, 1997, entitled, “Temperature Control System for a Workpiece Chuck,” assigned to Temptronic Corporation, and incorporated herein in its entirety by reference.
  • In accordance with the invention, it is recognized that if the plane in which the heating elements are disposed and the plane in which the heat sink fluid tubes are disposed are offset from each other in the vertical direction, then various problems result, including physical distortions in the chuck. These distortion effects prevent the wafer from being held flat during processing.
  • FIGS. 1-4 are schematic cross-sectional views of thermal plates illustrating possible layouts of the heating elements and cooing tubes. In FIG. 1, the general case in which the heaters and cooling tubes do not lie in the same plane is illustrated. Specifically, the case in which the heater 12 is located above the cooling tubes 14 within the casting 10 is illustrated. In this case, because of thermal expansion and contraction effects, when the heater 12 and/or the cooling tubes 14 are active, the housing 10 will tend to bow up in the middle, resulting in distortion in the chuck and the wafer.
  • FIG. 2 illustrates the configuration in accordance with the invention in which the heaters 12 and cooling tubes 14 are disposed in the same plane. In this configuration, the distortions due to the heaters 12 and tubes 14 being in different planes are eliminated.
  • In accordance with the invention, it is also recognized that it is preferable that the plane in which the heaters 12 and tubes 14 are disposed be located along the center of the housing 10 in the vertical dimension. That is, the plane in which they are disposed should include the horizontal center line 16 shown in FIG. 2. It is recognized that if the heaters 12 and tubes 14 are not located at the center of the thermal plate 10, then distortions result as shown in FIGS. 3 and 4. FIG. 3 illustrates the situation in which the heaters 12 and tubes 14 are located below the casting center line 16. In this case, the cast housing 10 bows down when heat is applied, resulting in a dish shape at the top surface of the chuck and the wafer. When cooling is applied, the opposite occurs; i.e., the housing 10 bows up, resulting in a dome shape at the top surface of the chuck and wafer. FIG. 4 illustrates the situation in which the heaters 12 and tubes 14 are located above the casting center line 16. In this case, the cast housing 10 bows up when heat is applied, resulting in a dome shape at the top surface of the chuck and the wafer. When cooling is applied, the housing 10 bows down, resulting in a dish shape at the top surface of the chuck and the wafer. Hence, it is preferred that the plane in which the heaters 12 and tubes 14 are located be at the center line of the cast housing 10.
  • FIG. 5 is a schematic top plan view of the thermal plate 10 of the invention with heating elements 12 and coolant circulating tube 14. Because the heaters 12 and cooling tube 14 are coiled in the same plane, they are interleaved with each other as shown. The heater 12 is electrically connected to a power source (not shown) via a connector 18 and wires 20. As described below in connection with FIG. 6, the heater 12 can actually include multiple heating elements enclosed in a sheath 22. The cooling fluid is circulated through the thermal plate 10 by tube 14. The fluid enters the plate 10 at an inlet port 24, flows in a spiral fashion through the coiled tube 14 to the center of the plate 10 and flows back out to the edge of the plate 10 in a spiral fashion in the coiled tube 14. The fluid exits the plate 10 at an outlet port 26. Both the heater 12 and cooling tube 14 are coiled in a spiral fashion within the plate 10 to provide efficient and uniform heat transfer to and from the chuck and wafer. This ensures highly accurate and uniform temperature setting and wafer testing.
  • FIG. 6 is a schematic cross-sectional view of one embodiment of a heater 12 in accordance with the invention. The heater 12 actually includes multiple, four in this case, electrical resistive heating elements 40 which are enclosed in a rigid or flexible and formable sheath enclosure 42. In the system described herein, the sheath 42 is formable such that the coiled configuration can be obtained. The heating elements 40 are supported and insulated from each other within the sheath 42 by an insulating and supporting material 44. The insulating and supporting material 44 achieves extremely high electrical isolation of the heating elements 40 from each other, the sheath, which is electrically connected to the thermal plate assembly, and the rest of the chuck. In one embodiment, the insulating and supporting material 44 is made from highly compressed insulating material such as magnesium oxide. Because it is highly compressed, moisture is prevented from contaminating the material and reducing its isolation characteristics. In one embodiment, the heater assembly 12 achieves over 100 Gigohms of isolation between the conductive elements and the sheath 42. The heater 12 includes hermetically sealed ends 48 and insulated heater leads 46 at one or both ends for attachment to a power source (not shown). Where the power source is connected at only one end, leads at the opposite end of the heater 12 can be connected together. In FIG. 6, these connections 47 are shown in phantom at the right end of the heater 12. In this case, the left set of leads 46 can be connected to the power source to create two heater elements.
  • In accordance with the invention, steps are taken during fabrication of the thermal plate cast housing to ensure that distortion in the thermal plate and chuck due to thermal effects are eliminated and that the entire system exhibits superior thermal and mechanical performance. For example, the aluminum casting is heat treated for stress relief after casting and before finish machining operations are performed. The casting is heat treated for stress relief again after finish machining such that distortion in the finished casting due to thermal effects is eliminated. In one embodiment, the heating and cooling elements are cast into the aluminum housing, which be cylindrical or non-circular. The heating and cooling coils are also stress relieved.
  • Referring to FIG. 7, in one configuration, the thermal plate 10 serves as a layer of the wafer chuck 50. The thermal plate 10 is mounted over a chuck base 11 by which the chuck 50 is mounted on the host machine. The top surface assembly 52 of the chuck 50 is mounted on the top surface of the thermal plate 10. The top surface assembly 52 supports and holds the wafer 5 for processing. The top surface assembly 52 is held on the top of the thermal plate 10 by vacuum, and the wafer 5 is held on the top surface assembly 52 by vacuum. To that end, vacuum input ports 15 and 17 are provided in the thermal plate 10. Vacuum input port 15 is coupled to vacuum channels which convey vacuum to the top of the thermal plate 10. A vacuum pattern including vacuum grooves or channels is formed in the top of the thermal plate 10 to distribute vacuum over the top of the thermal plate to hold the top surface assembly 52 to the thermal plate 10. Vacuum input port 17 is coupled to vacuum channels which convey vacuum up through the top surface assembly 52 to its top surface. A vacuum pattern including vacuum grooves or channels is formed in the top of the surface assembly 52 to distribute vacuum over the top of the surface assembly to hold the wafer 5 to the top surface assembly 52.
  • In one embodiment, the configuration of the top surface assembly 52 can be selected based upon the type of test being performed on the wafer 5. Different surface assemblies are used for different tests. In accordance with the invention, different top surface assemblies 52 can be interchanged according to the test being performed. The thermal plate 10 is configured to accommodate each type of top surface assembly 52, and the surface assemblies 52 are all made to be mounted on the thermal plate 10. Thus, the thermal plate 10 serves as a temperature-controlled vacuum mount platform having a unique adaptability to multiple testing performance requirements.
  • FIGS. 8A through 8C illustrate three different types of top surface assemblies 52A through 52C, respectively, which can be attached to the top of the thermal plate 10 for different tests. For example, one type of test being performed may require that high device power be absorbed by the surface 52, which would require that the surface 52 include a very thermally conductive material. In such a test, the top surface assembly 52A in FIG. 8A can be used. Surface assembly 52A includes a layer 60 of conductive material such as copper or aluminum covered by a plated or sputtered layer 62 of a conductive material such as gold, nickel or other such material. Another test may have very low electrical capacitance, high voltage or high isolation requirements. In such a case, the surface 52B of FIG. 8B can be used. Surface 52B includes an insulating dielectric layer 64, typically a ceramic material, covered by a plated or sputtered layer 62 of a conductive material such as gold, nickel or other such material. In another testing application, there may be a need for very low electrical signal leakage. This would require the surface assembly 52C of FIG. 8C. Surface assembly 52C includes a lower insulator layer 70 on which is mounted a conductive guard layer 68. An upper insulator layer 66 is positioned over the guard layer 68, and a plated or sputtered layer 62 of a conductive material such as gold, nickel or other such material is formed on the upper insulator 66. Alternatively, the top conductive layer 62 can be held by vacuum as described below in connection with FIG. 9. The guard layer 68 is driven with an excitation signal during testing to minimize test signal leakage due to isolation effects.
  • Each of the surfaces 52A through 52C is made to be of the same total thickness X such that they do not introduce a height difference when they are mounted on the thermal plate 10. This is true regardless of the number of layers in the assembly 52. Locating pins are provided between the thermal plate 10 and the surface assembly 52 as an aid in mounting the surface 52 on the plate 10. The locating pins also serve to hold the components together when vacuum is not present. Mechanical latches can also be used to secure the components when vacuum is removed.
  • As noted above, vacuum is used to hold the top surface assembly 52 to the thermal plate 10. Vacuum is also used to hold individual layers of the surface assembly 52 together. For example, FIG. 9 is a schematic exploded view of the surface 52C of FIG. 8C. As shown in FIG. 9, the top of the thermal plate includes a vacuum pattern 71 used to hold the lower insulator layer 70. The reference “V” refers to the vacuum grooves. The lower insulator 70 includes a vacuum pattern 73 used to hold the guard layer 68. Vacuum passes through vacuum holes in the guard layer 68 up to and through the upper insulator layer 66 where a vacuum pattern 75 on both sides of layer 66 is used both to hold a top layer 62 and to hold layer 66 to layer 68. FIG. 9 also illustrates the locating pins 7 used to hold the layers in position.
  • FIG. 10 is a schematic partial cross-section of the thermal plate 10 with the surface assembly 52C of FIG. 9 mounted thereon. FIG. 10 illustrates the vacuum ports 15 and 17 and distribution of the vacuum to the layers of the surface assembly 52C.
  • The thermal plate 10 and other components of the chuck of the invention can also include a surface finish that has both high durability and electrical isolation characteristics. In applications where the thermal plate and the top surface assembly 52 have different thermal expansion coefficients, the two components will move relative to each other as temperature is changed. As a result, abrasion occurs at the interface between the two components. In one application, the surface 52 is a very hard ceramic material and the thermal plate is much softer material such as cast aluminum. The softer thermal plate 10 is scratched and abraded. This is especially true at high temperatures, where the ceramic and aluminum tend to bond to each other. In accordance with the invention, a hard surface covering, such as a hard anodize plating, is provided on the top surface of the thermal plate 10 to eliminate the abrasion and bonding between the thermal plate 10 and the surface assembly 52.
  • In another application, the bottom of the surface assembly 52 is metal. The hard anodize coating can be applied to either the top surface of the thermal plate 10 or the bottom surface of the surface assembly 52. In this case, the anodize coating provides electrical isolation between the thermal plate 10 and the surface assembly.
  • In still another application, the hard anodize coating is applied to the top of the thermal plate 10. Then, a conductive layer is bonded to the anodized layer. Next, a final layer of anodize is applied to the top of the conductive layer. The conductive top surface layer 62 of the surface assembly 52 is then mounted on the final anodize layer. In this configuration, the conductive layer between the two anodize layers can be used as a guard layer. The electrically conductive guard plate is insulated by the layers of anodize from both the thermal plate 10 and the surface assembly 52. Therefore, this anodize-conductor-anodize-conductor structure can be used instead of the top surface assembly 52C of FIG. 8C. This approach is considerably less expensive and simpler to implement than the multilayer structure of FIG. 8C. Also, the guard layer can be made inexpensively and quickly by anodizing a thin sheet of conductive material such as aluminum on both sides or all over its exterior.
  • While this invention has been particularly shown and described with references to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the following claims.

Claims (22)

1. A thermal control apparatus for a workpiece chuck, the thermal control apparatus comprising:
a heating element disposed in a heating plane; and
a cooling element disposed in a cooling plane; wherein
the heating plane and the cooling plane are the same plane.
2. The thermal control apparatus of claim 1, wherein the heating element comprises a resistive heating element in a coil configuration within the heating plane.
3. The thermal control apparatus of claim 1, wherein the cooling element comprises at least one tube for circulating cooling fluid, the tube being configured in a coil configuration in the cooling plane.
4. The thermal control apparatus of claim 3, wherein the heating element comprises a resistive heating element in a coil configuration within the heating plane.
5. The thermal control apparatus of claim 4, wherein the heating element is electrically isolated from the thermal plate assembly.
6. The thermal control apparatus of claim 5, wherein the isolation impedance is over 100 Gigohms.
7. The thermal control apparatus of claim 4, wherein the resistive heating element and the tube are disposed in a plane in coil configurations interleaved with each other.
8. The thermal control apparatus of claim 4, wherein the plane in which the resistive heating element and the tube are disposed is a center plane of the thermal control apparatus halfway between a top surface of the thermal control apparatus and a bottom surface of the thermal control apparatus.
9. The thermal control apparatus of claim 1, wherein the heating plane and the cooling plane lie in a center plane of the thermal control apparatus halfway between a top surface of the thermal control apparatus and a bottom surface of the thermal control apparatus.
10. The thermal control apparatus of claim 1, further comprising a housing enclosing the heating element and the cooling element, the housing being made from a cast metal.
11. The thermal control apparatus of claim 10, wherein the metal comprises aluminum.
12. The thermal control apparatus of claim 10, wherein the metal is pure aluminum.
13. The thermal control apparatus of claim 10, wherein the metal is an alloy with low thermal distortion.
14. The thermal control apparatus of claim 1, wherein the thermal control apparatus is a layer of the workpiece chuck.
15. The thermal control apparatus of claim 14, wherein the heating element comprises a resistive heating element in a coil configuration within the heating plane.
16. The thermal control apparatus of claim 14, wherein the cooling element comprises at least one tube for circulating cooling fluid, the tube being configured in a coil configuration in the cooling plane.
17. The thermal control apparatus of claim 16, wherein the heating element comprises a resistive heating element in a coil configuration within the heating plane.
18. The thermal control apparatus of claim 17, wherein the resistive heating element and the tube are disposed in a plane in coil configurations interleaved with each other.
19. The thermal control apparatus of claim 17, wherein the plane in which the resistive heating element and the tube are disposed is a center plane of the thermal control apparatus halfway between a top surface of the thermal control apparatus and a bottom surface of the thermal control apparatus.
20. The thermal control apparatus of claim 14, wherein the heating plane and the cooling plane lie in a center plane of the thermal control apparatus halfway between a top surface of the thermal control apparatus and a bottom surface of the thermal control apparatus.
21. The thermal control apparatus of claim 14, further comprising a housing enclosing the heating element and the cooling element, the housing being made from a cast metal.
22. The thermal control apparatus of claim 21, wherein the metal comprises aluminum.
US11/146,959 2000-07-10 2005-06-07 Wafer chuck having thermal plate with interleaved heating and cooling elements Abandoned US20050217583A1 (en)

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US09/900,285 US6700099B2 (en) 2000-07-10 2001-07-06 Wafer chuck having thermal plate with interleaved heating and cooling elements, interchangeable top surface assemblies and hard coated layer surfaces
US10/465,716 US6969830B2 (en) 2000-07-10 2003-06-19 Wafer chuck having thermal plate with interleaved heating and cooling elements
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20090294101A1 (en) * 2008-06-03 2009-12-03 Applied Materials, Inc. Fast substrate support temperature control
US7900373B2 (en) * 2002-04-15 2011-03-08 Ers Electronic Gmbh Method for conditioning semiconductor wafers and/or hybrids
US20110154843A1 (en) * 2009-12-31 2011-06-30 Ko Sungyong Apparatus for controlling temperature of electrostatic chuck comprising two-stage refrigerant fluid channel
US20120210935A1 (en) * 2009-10-30 2012-08-23 Lucien Johannes Nelen Application and inspection system
US20170032989A1 (en) * 2015-07-28 2017-02-02 Inotera Memories, Inc. Electrostatic chuck and temperature-control method for the same
USD798250S1 (en) * 2015-12-01 2017-09-26 Nuflare Technology, Inc. Heater
TWI616976B (en) * 2015-06-05 2018-03-01 瓦特洛威電子製造公司 High thermal conductivity wafer support pedestal device

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040016745A1 (en) * 2002-07-29 2004-01-29 Applied Materials, Inc. Method for achieving process uniformity by modifying thermal coupling between heater and substrate
JP2005012172A (en) * 2003-05-23 2005-01-13 Dainippon Screen Mfg Co Ltd Heat-treating apparatus
WO2005055291A1 (en) * 2003-11-26 2005-06-16 Temptronic Corporation Apparatus and method for reducing electrical noise in a thermally controlled chuck
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7914858B1 (en) * 2004-05-04 2011-03-29 Maxtor Corporation Process to seal housing components to contain low density gas
JP4140593B2 (en) * 2004-09-21 2008-08-27 住友電気工業株式会社 Metallized substrate
US7926418B2 (en) * 2004-10-07 2011-04-19 All-Clad Metalcrafters Llc Griddle plate having a vacuum bonded cook surface
US7980171B2 (en) * 2004-10-07 2011-07-19 All-Clad Metalcrafters Llc Vacuum cooking or warming appliance
US7731798B2 (en) * 2004-12-01 2010-06-08 Ultratech, Inc. Heated chuck for laser thermal processing
US20060196653A1 (en) * 2005-03-04 2006-09-07 Elsdoerfer Norbert W Apparatus and method for controlling temperature in a chuck system
TWI339737B (en) 2005-04-27 2011-04-01 Aehr Test Systems Contactor assembly, cartridge, and apparatus and method for testing integrated circuit of device
KR100626395B1 (en) * 2005-06-29 2006-09-20 삼성전자주식회사 Apparatus and method for post exposure bake, and photo lithography system with the apparatus
US7429718B2 (en) * 2005-08-02 2008-09-30 Applied Materials, Inc. Heating and cooling of substrate support
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
JP4912056B2 (en) * 2006-06-22 2012-04-04 株式会社東京精密 Prober chuck
US20080035306A1 (en) * 2006-08-08 2008-02-14 White John M Heating and cooling of substrate support
US7589950B2 (en) * 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
JP5070870B2 (en) * 2007-02-09 2012-11-14 東洋製罐株式会社 Induction heating heating element and induction heating container
US8760621B2 (en) * 2007-03-12 2014-06-24 Asml Netherlands B.V. Lithographic apparatus and method
WO2008124068A1 (en) 2007-04-05 2008-10-16 Aehr Test Systems Electronics tester with a signal distribution board and a wafer chuck having different coefficients of thermal expansion
US7800382B2 (en) 2007-12-19 2010-09-21 AEHR Test Ststems System for testing an integrated circuit of a device and its method of use
WO2009084486A1 (en) * 2007-12-27 2009-07-09 Sharp Kabushiki Kaisha Plasma treatment apparatus, heating device for the plasma treatment apparatus, and plasma treatment method
KR101573962B1 (en) * 2008-08-19 2015-12-02 램 리써치 코포레이션 Edge rings for electrostatic chucks
US20100084117A1 (en) * 2008-10-02 2010-04-08 Fish Roger B Platen cooling mechanism for cryogenic ion implanting
US8030957B2 (en) 2009-03-25 2011-10-04 Aehr Test Systems System for testing an integrated circuit of a device and its method of use
DE102009018434B4 (en) * 2009-04-22 2023-11-30 Ev Group Gmbh Receiving device for holding semiconductor substrates
US8410393B2 (en) 2010-05-24 2013-04-02 Lam Research Corporation Apparatus and method for temperature control of a semiconductor substrate support
US9719169B2 (en) * 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
KR20130031945A (en) * 2011-09-22 2013-04-01 삼성전자주식회사 Apparatus for controlling temperature of loading chuck and method of controlling temperature
US9335080B2 (en) 2011-10-17 2016-05-10 Temptronic Corporation Temperature system having an impurity filter
EP2601870B1 (en) * 2011-12-09 2014-02-19 John Bean Technologies AB Heating element for a cooking apparatus
US9244107B2 (en) * 2012-11-12 2016-01-26 Marvell World Trade Ltd. Heat sink blade pack for device under test testing
JP6013250B2 (en) * 2013-03-27 2016-10-25 東京エレクトロン株式会社 Probe device
US10436516B2 (en) * 2013-08-23 2019-10-08 Savannah River Nuclear Solutions, Llc Thermal cycling device
US9349645B2 (en) 2013-10-16 2016-05-24 Nxp B.V. Apparatus, device and method for wafer dicing
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US9530682B2 (en) 2014-05-12 2016-12-27 Varian Semiconductor Equipment Associates, Inc. System and apparatus for holding a substrate over wide temperature range
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
US20170140956A1 (en) * 2015-11-13 2017-05-18 Varian Semiconductor Equipment Associates, Inc. Single Piece Ceramic Platen
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US10126790B2 (en) * 2016-05-05 2018-11-13 Applied Materials, Inc. Dual loop susceptor temperature control system
US10467134B2 (en) 2016-08-25 2019-11-05 Sandisk Technologies Llc Dynamic anneal characteristics for annealing non-volatile memory
US9761290B1 (en) 2016-08-25 2017-09-12 Sandisk Technologies Llc Overheat prevention for annealing non-volatile memory
US10679873B2 (en) * 2016-09-30 2020-06-09 Ngk Spark Plug Co., Ltd. Ceramic heater
CN114814522A (en) 2017-03-03 2022-07-29 雅赫测试系统公司 Electronic tester
DE102019128942A1 (en) * 2019-10-28 2021-04-29 Infineon Technologies Ag Prober with cooling mechanism for direct cooling of a device under test
WO2022076333A1 (en) 2020-10-07 2022-04-14 Aehr Test Systems Electronics tester
US11794314B2 (en) 2021-08-30 2023-10-24 Kla Corporation Quick swap chuck with vacuum holding interchangeable top plate

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4280932A (en) * 1979-02-12 1981-07-28 General Electric Company Magnesia insulated heating elements
US5034688A (en) * 1988-05-05 1991-07-23 Ets Gourdon Temperature conditioning support for small objects such as semi-conductor components and thermal regulation process using said support
US5703493A (en) * 1995-10-25 1997-12-30 Motorola, Inc. Wafer holder for semiconductor applications
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US6073681A (en) * 1997-12-31 2000-06-13 Temptronic Corporation Workpiece chuck

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3306999A1 (en) * 1982-03-31 1983-10-06 Censor Patent Versuch Fixture for clamping a workpiece
JPH02162747A (en) * 1988-12-15 1990-06-22 Asutoro Design Kk Thermochuck
DE3943482C2 (en) * 1989-05-08 1994-07-07 Balzers Hochvakuum Workpiece carrier for a disc-shaped workpiece, as well as vacuum process chamber
US5099571A (en) 1990-09-07 1992-03-31 International Business Machines Corporation Method for fabricating a split-ring electrostatic chuck
JPH0750736B2 (en) * 1990-12-25 1995-05-31 日本碍子株式会社 Wafer heating apparatus and manufacturing method thereof
US5213349A (en) * 1991-12-18 1993-05-25 Elliott Joe C Electrostatic chuck
JP2975797B2 (en) * 1993-02-08 1999-11-10 東京エレクトロン株式会社 Probe device
EP0634699A1 (en) * 1993-07-16 1995-01-18 Semiconductor Systems, Inc. Clustered photolithography system
JPH07106317A (en) * 1993-10-08 1995-04-21 Sony Corp Specimen stand
WO1997009737A1 (en) * 1995-09-01 1997-03-13 Advanced Semiconductor Materials America, Inc. Wafer support system
JPH1050811A (en) 1996-03-16 1998-02-20 Miyata R Andei:Kk Temperature adjustment mechanism for semiconductor substrate
US6147334A (en) * 1998-06-30 2000-11-14 Marchi Associates, Inc. Laminated paddle heater and brazing process
US6583638B2 (en) 1999-01-26 2003-06-24 Trio-Tech International Temperature-controlled semiconductor wafer chuck system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4280932A (en) * 1979-02-12 1981-07-28 General Electric Company Magnesia insulated heating elements
US5034688A (en) * 1988-05-05 1991-07-23 Ets Gourdon Temperature conditioning support for small objects such as semi-conductor components and thermal regulation process using said support
US5703493A (en) * 1995-10-25 1997-12-30 Motorola, Inc. Wafer holder for semiconductor applications
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US6073681A (en) * 1997-12-31 2000-06-13 Temptronic Corporation Workpiece chuck

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7900373B2 (en) * 2002-04-15 2011-03-08 Ers Electronic Gmbh Method for conditioning semiconductor wafers and/or hybrids
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20090294101A1 (en) * 2008-06-03 2009-12-03 Applied Materials, Inc. Fast substrate support temperature control
US8596336B2 (en) 2008-06-03 2013-12-03 Applied Materials, Inc. Substrate support temperature control
US20120210935A1 (en) * 2009-10-30 2012-08-23 Lucien Johannes Nelen Application and inspection system
US20110154843A1 (en) * 2009-12-31 2011-06-30 Ko Sungyong Apparatus for controlling temperature of electrostatic chuck comprising two-stage refrigerant fluid channel
TWI616976B (en) * 2015-06-05 2018-03-01 瓦特洛威電子製造公司 High thermal conductivity wafer support pedestal device
US20170032989A1 (en) * 2015-07-28 2017-02-02 Inotera Memories, Inc. Electrostatic chuck and temperature-control method for the same
US9870934B2 (en) * 2015-07-28 2018-01-16 Micron Technology, Inc. Electrostatic chuck and temperature-control method for the same
USD798250S1 (en) * 2015-12-01 2017-09-26 Nuflare Technology, Inc. Heater

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WO2002009155A3 (en) 2003-08-14
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US20030213793A1 (en) 2003-11-20
JP2004505443A (en) 2004-02-19
US6700099B2 (en) 2004-03-02
US20020066726A1 (en) 2002-06-06
EP1356499A2 (en) 2003-10-29
US6969830B2 (en) 2005-11-29
AU2001271904A1 (en) 2002-02-05

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