US20040209548A1 - Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces - Google Patents

Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces Download PDF

Info

Publication number
US20040209548A1
US20040209548A1 US10/828,017 US82801704A US2004209548A1 US 20040209548 A1 US20040209548 A1 US 20040209548A1 US 82801704 A US82801704 A US 82801704A US 2004209548 A1 US2004209548 A1 US 2004209548A1
Authority
US
United States
Prior art keywords
planarizing
solution
workpiece
pad
dispenser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/828,017
Inventor
Michael Joslyn
Original Assignee
Joslyn Michael J.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US09/939,430 priority Critical patent/US6722943B2/en
Application filed by Joslyn Michael J. filed Critical Joslyn Michael J.
Priority to US10/828,017 priority patent/US20040209548A1/en
Publication of US20040209548A1 publication Critical patent/US20040209548A1/en
Application status is Abandoned legal-status Critical

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Abstract

Machines with solution dispensers and methods of using such machines for chemical-mechanical planarization and/or electrochemical—mechanical planarization/deposition of microelectronic workpieces. One embodiment of such a machine includes a table having a support surface, a processing pad on the support surface, and a carrier assembly having a head configured to hold a microelectronic workpiece. The carrier assembly can further include a drive assembly that manipulates the head. The machine can also include a solution dispenser separate from the head. The solution dispenser can include a support extending over the pad and a fluid discharge unit or distributor carried by the support. The fluid discharge unit is configured to discharge a planarizing solution onto a plurality of separate locations across the pad.

Description

    TECHNICAL FIELD
  • The present invention relates to planarizing machines and methods for dispensing planarizing solutions onto a plurality of locations of a processing pad in the fabrication of microelectronic devices. [0001]
  • BACKGROUND
  • Mechanical and chemical-mechanical planarizing processes (collectively “CMP”) remove material from the surface of semiconductor wafers, field emission displays, read/write heads or other microelectronic workpieces in the production of microelectronic devices and other products. FIG. 1 schematically illustrates a CMP machine [0002] 10 with a platen 20, a carrier assembly 30, and a planarizing pad 40. The CMP machine 10 may also have an under-pad 25 attached to an upper surface 22 of the platen 20 and the lower surface of the planarizing pad 40. A drive assembly 26 rotates the platen 20 (indicated by arrow F), or it reciprocates the platen 20 back and forth (indicated by arrow G). Since the planarizing pad 40 is attached to the under-pad 25, the planarizing pad 40 moves with the platen 20 during planarization.
  • The carrier assembly [0003] 30 has a head 32 to which a workpiece 12 may be attached, or the workpiece 12 may be attached to a resilient pad 34 in the head 32. The head 32 may be a free-floating wafer carrier, or an actuator assembly 36 may be coupled to the head 32 to impart axial and/or rotational motion to the workpiece 12 (indicated by arrows H and 1, respectively).
  • The planarizing pad [0004] 40 and a planarizing solution 44 on the pad 40 collectively define a planarizing medium that mechanically and/or chemically-mechanically removes material from the surface of the workpiece 12. The planarizing pad 40 can be a soft pad or a hard pad. The planarizing pad 40 can also be a fixed-abrasive planarizing pad in which abrasive particles are fixedly bonded to a suspension material. In fixed-abrasive applications, the planarizing solution 44 is typically a non-abrasive “clean solution” without abrasive particles. In other applications, the planarizing pad 40 can be a non-abrasive pad composed of a polymeric material (e.g., polyurethane), resin, felt or other suitable materials. The planarizing solutions 44 used with the non-abrasive planarizing pads are typically abrasive slurries with abrasive particles suspended in a liquid.
  • To planarize the workpiece [0005] 12 with the CMP machine 10, the carrier assembly 30 presses the workpiece 12 face-downward against the polishing medium. More specifically, the carrier assembly 30 generally presses the workpiece 12 against the planarizing liquid 44 on a planarizing surface 42 of the planarizing pad 40, and the platen 20 and/or the carrier assembly 30 move to rub the workpiece 12 against the planarizing surface 42. As the workpiece 12 rubs against the planarizing surface 42, material is removed from the face of the workpiece 12.
  • CMP processes should consistently and accurately produce a uniformly planar surface on the workpiece to enable precise fabrication of circuits and photo-patterns. During the construction of transistors, contacts, interconnects and other features, many workpieces develop large “step heights” that create highly topographic surfaces. Such highly topographical surfaces can impair the accuracy of subsequent photolithographic procedures and other processes that are necessary for forming sub-micron features. For example, it is difficult to accurately focus photo patterns to within tolerances approaching 0.1 micron on topographic surfaces because sub-micron photolithographic equipment generally has a very limited depth of field. Thus, CMP processes are often used to transform a topographical surface into a highly uniform, planar surface at various stages of manufacturing microelectronic devices on a workpiece. [0006]
  • In the highly competitive semiconductor industry, it is also desirable to maximize the throughput of CMP processing by producing a planar surface on a workpiece as quickly as possible. The throughput of CMP processing is a function, at least in part, of the polishing rate of the planarizing cycle and the ability to accurately stop CMP processing at a desired endpoint. Therefore, it is generally desirable for CMP processes to provide (a) a desired polishing rate gradient across the face of a substrate to enhance the planarity of the finished surface, and (b) a reasonably consistent polishing rate during a planarizing cycle to enhance the accuracy of determining the endpoint of a planarizing cycle. [0007]
  • Conventional planarizing machines may not provide consistent polishing rates because of nonuniformities in (a) the distribution of the slurry across the processing pad, (b) the wear of the processing pad, and/or (c) the temperature of the processing pad. The distribution of the planarizing solution across the surface of the processing pad may not be uniform because conventional planarizing machines typically discharge the planarizing solution onto a single point at the center of the pad. This causes a thicker layer of planarizing solution to be at the center of the pad than at the perimeter, which may result in different polishing rates across the pad. Additionally, the nonuniform distribution of the planarizing solution may cause the center region of the pad to behave differently than the perimeter region because many low PH solutions used during planarizing cycles are similar to cleaning solutions for removing stains and waste matter from the pads when polishing metallic surfaces. Such low PH planarizing solutions dispersed locally accordingly may change the physical characteristics differently at the center of the pad than at the perimeter. The nonuniform distribution of planarizing solution also causes a nonuniform temperature distribution across the pad because the planarizing solution is typically at a different temperature than the processing pads. For example, when the planarizing solution is at a lower temperature than the pad, the temperature near the single dispensing point of the planarizing solution is typically lower than other areas of the processing pad. [0008]
  • One concern of manufacturing microelectronic workpieces is that the distribution of the planarizing solution can cause variances in the planarized surface of the workpieces. For example, an inconsistent distribution of planarizing solution between the workpiece and the pad can cause certain areas of the workpiece to planarize faster than other areas. Nonuniform pad wear and nonuniform temperature distributions across the processing pad can also cause inconsistent planarizing results that (a) reduce the planarity and uniformity of the planarized surface on the workpieces, and (b) reduce the accuracy of endpointing the planarizing cycles. Therefore, it would be desirable to develop more consistent planarizing procedures and machines to provide more accurate planarization of microelectronic workpieces. [0009]
  • SUMMARY OF THE INVENTION
  • The present invention describes machines with solution dispensers for use in chemical-mechanical planarization and/or electrochemical-mechanical planarization/deposition of microelectronic workpieces. One embodiment of such a machine includes a table having a support surface, a processing pad on the support surface, and a carrier assembly having a head configured to hold a microelectronic workpiece. The carrier assembly can further include a drive assembly that carries the head. The machine can also include a solution dispenser separate from the head. The solution dispenser can include a support extending over the pad and a fluid discharge unit or distributor carried by the support. The fluid discharge unit is configured to simultaneously discharge a planarizing solution onto a plurality of separate locations across the pad. [0010]
  • In one particular embodiment, the solution dispenser comprises an elongated support extending over the pad at a location spaced apart from a travel path of the head, a fluid passageway carried by the support through which the planarizing solution can flow, and a plurality of nozzles carried by the support. The nozzles are in fluid communication with the fluid passageway to create a plurality of flows of planarizing solution that are discharged onto separate locations across the processing pad. An alternate embodiment of a machine in accordance with the invention includes a solution dispenser comprising an elongated support extending over the pad at a location spaced apart from the travel path of the head, a fluid passageway carried by the support through which a planarizing solution can flow, and an elongated slot extending along at least a portion of the support. The elongated slot is in fluid communication with the fluid passageway to create an elongated flow of planarizing solution. Another alternative embodiment includes an elongated support having a channel extending along at least a portion of the support through which the planarizing solution can flow and a lip along at least a portion of the channel over which the planarizing solution can flow. The lip accordingly defines a weir for depositing an elongated flow of planarizing solution across a portion of the pad. [0011]
  • Other embodiments of solution dispensers for the planarizing machine comprise an elongated support extending over the pad at a location spaced apart from the travel path of the head, a fluid passageway carried by the support, a first fluid discharge unit, and a second fluid discharge unit. The elongated support of these embodiments can include a first section and a second section. The first fluid discharge unit can be carried at the first section of the support to discharge a first flow of the planarizing solution onto a first location of the pad. The second fluid discharge unit can be carried by the second section of the support to discharge a second flow of the planarizing solution onto a second location of the pad. The first and second fluid discharge units can be independently controllable from one another so that the first flow of planarizing solution discharged onto the first location of the pad is different than the second flow of planarizing solution discharged onto the second location of the pad.[0012]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a cross-sectional view of a planarizing machine in accordance with the prior art in which selected components are shown schematically. [0013]
  • FIG. 2 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically. [0014]
  • FIGS. 3A-3C are cross-sectional views showing an embodiment of a planarizing solution dispenser in accordance with the invention. [0015]
  • FIG. 4 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with another embodiment of the invention with selected components shown in cross-section or schematically. [0016]
  • FIG. 5 is a top plan view of the planarizing system of FIG. 4. [0017]
  • FIG. 6 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically. [0018]
  • FIG. 7 is a front cross-sectional view of a portion of the planarizing solution dispenser of FIG. 6. [0019]
  • FIG. 8 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically. [0020]
  • FIG. 9 is a side elevation view of an embodiment of a planarizing solution dispenser in accordance with the embodiment of FIG. 8. [0021]
  • FIG. 10 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically. [0022]
  • FIG. 11 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.[0023]
  • DETAILED DESCRIPTION
  • The following disclosure describes planarizing machines with planarizing solution dispensers and methods for planarizing microelectronic workpieces. The microelectronic workpieces can be semiconductor wafers, field emission displays, read/write media, and many other workpieces that have microelectronic devices with miniature components (e.g., integrated circuits). Many of the details of the invention are described below with reference to rotary planarizing applications to provide a thorough understanding of such embodiments. The present invention, however, can also be practiced using web-format planarizing machines and electrochemical-mechanical planarizing/deposition machines. Suitable web-format planarizing machines that can be adapted for use with the present invention include U.S. patent application Ser. Nos. 09/595,727 and 09/565,639, which are herein incorporated by reference. A suitable electrochemical-mechanical planarizing/deposition machine that can be adapted for use is shown in U.S. Pat. No. 6,176,992, which is also herein incorporated by reference. A person skilled in the art will thus understand that the invention may have additional embodiments, or that the invention may be practiced without several of the details described below. [0024]
  • FIG. 2 is a cross-sectional view of a planarizing system [0025] 100 having a planarizing solution dispenser 160 that discharges a planarizing solution 150 in accordance with an embodiment of the invention. The planarizing machine 100 has a table 114 with a top panel 116. The top panel 116 is generally a rigid plate to provide a flat, solid surface for supporting a processing pad. In this embodiment, the table 114 is a rotating platen that is driven by a drive assembly 118.
  • The planarizing machine [0026] 100 also includes a workpiece carrier assembly 130 that controls and protects a microelectronic workpiece 131 during planarization or electrochemical-mechanical planarization/deposition processes. The carrier assembly 130 can include a workpiece holder 132 to pick up, hold and release the workpiece 131 at appropriate stages of a planarizing cycle and/or a conditioning cycle. The workpiece carrier assembly 130 also generally has a backing member 134 contacting the backside of the workpiece 131 and an actuator assembly 136 coupled to the workpiece holder 132. The actuator assembly 136 can move the workpiece holder 132 vertically (arrow H), rotate the workpiece holder 132 (arrow 1), and/or translate the workpiece holder 132 laterally. In a typical operation, the actuator assembly 136 moves the workpiece holder 132 to press the workpiece 131 against a processing pad 140.
  • The processing pad [0027] 140 shown in FIG. 2 has a planarizing medium 142 and a contact surface 144 for selectively removing material from the surface of the workpiece 131. The planarizing medium 142 can have a binder 145 and a plurality of abrasive particles 146 distributed throughout at least a portion of the binder 145. The binder 145 is generally a resin or another suitable material, and the abrasive particles 146 are generally alumina, ceria, titania, silica or other suitable abrasive particles. At least some of the abrasive particles 146 are partially exposed at the contact surface 144 of the processing pad 140. Suitable fixed-abrasive planarizing pads are disclosed in U.S. Pat. Nos. 5,645,471; 5,879,222; 5,624,303; and U.S. patent application Ser. Nos. 09-164,916 and 09-001,333; all of which are herein incorporated by reference. In other embodiments the processing pad 140 can be a non-abrasive pad without abrasive particles, such as a Rodel OXB 3000 “Sycamore” polishing pad manufactured by Rodel Corporation. The Sycamore pad is a hard pad with trenches for macro-scale slurry transportation underneath the workpiece 131. The contact surface 144 can be a flat surface, or it can have a pattern of micro-features, trenches, and/or other features.
  • Referring still to FIG. 2, the dispenser [0028] 160 is configured to discharge the planarizing solution 150 onto a plurality of separate locations of the pad 140. In this embodiment, the dispenser 160 includes a support 162 extending over a portion of the pad 140 and a fluid discharge unit or distributor 164 (shown schematically) carried by the support 162. The support 162 can be an elongated arm that is attached to an actuator 166 that moves the support 162 relative to the pad 140. The distributor 164 can discharge a flow of the planarizing solution 150 onto the contact surface 144 of the pad 140. The distributor 164, for example, can be an elongated slot or a plurality of other openings extending along a bottom portion of the support 162. In this embodiment, the distributor 164 creates an elongated flow of planarizing solution 150 that simultaneously contacts an elongated portion of the contact surface 144 of the pad 140. The dispenser 160 accordingly discharges the planarizing solution onto a plurality of separate points or areas of the contact surface 144.
  • FIG. 3A is a top cross-sectional view showing the embodiment of the dispenser [0029] 160 of FIG. 2 along line 3A-3A. In this embodiment, the support 162 has a fluid passageway 168 for receiving the planarizing solution from a reservoir (not shown in FIG. 3A). The fluid passageway 168 can have a proximal section 167 a through which the planarizing solution flows into the support and a distal section 167 b defining a cavity over the processing pad 140. The distributor 164 in this embodiment can have an elongated slot 169 along the bottom of the support 162 and a valve 170 within the distal section 167 b of the fluid passageway 168. The valve 170 has a cavity 172, and the planarizing fluid can flow through the proximal section 167 a and into the cavity 172 of the valve 170. The valve 170 operates to open and close the elongated slot 169 for controlling the flow of planarizing solution onto the contact surface 144.
  • FIGS. 3B and 3C are cross-sectional views of the dispenser [0030] 160 taken along line 3B-3B shown in FIG. 3A. Referring to FIG. 3B, the valve 170 can fit within the distal section 167 b so that an outer wall of the valve 170 engages or otherwise faces an inner wall of the distal section 167 b. The valve 170 can have an elongated slot 174 or a plurality of holes extending along a portion of the valve. FIG. 3B illustrates the valve 170 in an open position in which the slot 174 in the valve 170 is at least partially aligned with the elongated slot 169 in the support 162 so that a fluid F can flow through the slot 169. FIG. 3C illustrates the valve 170 in a closed position in which the slot 174 is not aligned with the elongated slot 169 so that the valve 170 prevents the planarizing solution from flowing through the distributor 164. In operation, a motor or other actuator (not shown) can rotate the valve 170 within the arm 162 to open and close the slot 169.
  • Several embodiments of the planarizing machine [0031] 100 shown in FIG. 2 are expected to provide better planarizing results because the dispenser 160 is expected to provide a uniform coating of planarizing solution 150 across the contact surface 144 of the pad 140. By discharging the planarizing solution 150 along an elongated line across the pad 140, the planarizing solution 150 is deposited onto a plurality of separate areas of the contact surface 144. As the pad 140 rotates, the centrifugal force drives planarizing solution 150 off the perimeter of the pad. The wide coverage of the discharge area for the planarizing solution 150 and the spinning motion of the pad 140 act together to provide a distribution of planarizing solution across the pad 140 that is expected to have a uniform thickness. As a result, several embodiments of the planarizing machine 100 are expected to provide more uniform pad wear and temperature distribution across the contact surface 144 of the pad 140. Therefore, several embodiments of the planarizing machine 100 are expected to provide consistent planarizing results by reducing variances in planarizing parameters caused by a nonuniform distribution of planarizing solution.
  • FIGS. 4 and 5 illustrate the planarizing machine [0032] 200 having a solution dispenser 260 in accordance with another embodiment of the invention. The table 114, the drive assembly 118 and the carrier assembly 130 can be similar to those described above with reference to FIG. 2, and thus like reference numbers refer to like components in FIGS. 2-5. In this embodiment, the dispenser 260 includes a support 262 and a plurality of nozzles 264 carried by the support 262. The nozzles 264 are in fluid communication with a fluid passageway 268 that is also carried by the support 262. The nozzles 264 can be configured to produce gentle, low-velocity flows of planarizing solution 250. In operation, the planarizing solution 250 is pumped through the fluid passageway 268 and through the nozzles 264. The nozzles 264 accordingly define a distributor that discharges the planarizing solution 250 onto a plurality of locations of the pad 140. The planarizing machine 200 is expected to have several of the same advantages as the planarizing machine 100 described above.
  • FIGS. 6 and 7 show a dispenser [0033] 360 in accordance with another embodiment of the invention for use with a planarizing machine 300. Referring to FIG. 6, the dispenser 360 has a support 362 with a fluid passageway 368 that extends into a weir 370. FIG. 7 is a cross-sectional view of the support 362 taken along line 7-7 of FIG. 6. Referring to FIG. 7, the weir 370 includes a channel or trough 372 that is in fluid communication with the fluid passageway 368 and a lip 374 at the top of the trough 372. In operation, a planarizing fluid 350 flows through the fluid passageway 368 and fills the trough 372 until the planarizing solution 350 flows over the lip 374. As shown in FIG. 6, the dispenser 360 discharges the planarizing solution 350 onto a plurality of separate locations of the contact surface 144. Several embodiments of the dispenser 360 are expected to operate in a manner similar to the dispensers 160 and 260 explained above.
  • FIG. 8 shows a planarizing machine [0034] 400 having a distributor 460 in accordance with another embodiment of the invention. In this embodiment, the distributor 460 includes a support 462, a first fluid discharge unit 464 a carried by a first section of the support 462, and a second fluid discharge unit 464 b carried by a second section of the support 462. The dispenser 460 can further include a fluid passageway 468 coupled to each of the first and second discharge units 464 a and 464 b. The dispenser 460 also includes a controller 480 coupled to the fluid passageway 468 and/or each of the first and second fluid discharge units 464 a and 464 b.
  • In operation, the controller [0035] 480 independently controls the flow of the planarizing solution to the first and second fluid discharge units 464 a and 464 b.
  • The first fluid discharge unit [0036] 464 a can accordingly discharge a first flow of planarizing fluid 450 a, and the second fluid discharge unit 464 b can discharge a second flow of planarizing fluid 450 b. The controller 480 can vary the first and second flows 450 a and 450 b of planarizing solution so that the planarizing solution is discharged onto the contact surface 144 in a manner that provides a desired distribution of the planarizing solution across the pad 140. For example, if the temperature at the perimeter portion of the processing pad 140 is greater than the central portion, then the first fluid flow 450 a can be increased and/or the second fluid flow 450 b can be decreased so that more planarizing solution is deposited onto the perimeter portion of the processing pad 140 relative to the central portion to dissipate more heat from perimeter portion of the pad 140. The controller 480 can be a computer, and each of the fluid discharge units 464 a and 464 b can be separate nozzles, slots, weirs, or other structures that can independently discharge separate fluid flows onto the pad 140.
  • Several embodiments of the planarizing machine [0037] 400 are expected to provide good control of planarizing parameters. By independently discharging separate fluid flows onto the pad 140, the distributor 460 and the controller 480 can be manipulated to change the distribution of the planarizing solution across the surface of the pad according to the actual planarizing results or parameters that are measured during a planarizing cycle. As such, the planarizing machine can create a desired nonuniform distribution of planarizing solution across the pad 140 to compensate for variances in other planarizing parameters. Therefore, several embodiments of the planarizing machine 400 are expected to provide additional control of the planarizing parameters to consistently produce high-quality planarized surfaces.
  • FIG. 9 illustrates a dispenser [0038] 560 in accordance with another embodiment of the invention that can be used with the controller 480 of FIG. 8. In this embodiment, the dispenser 560 includes a support 562 extending over the pad 140 and a plurality of nozzles 564 (identified individually be reference numbers 564 a-c) carried by the support 562. The support 562 can be an arm that is attached to an actuator or a fixed support relative to the pad 140. The nozzles 564 can include at least a first nozzle 564 a defining a first fluid discharge unit and a second nozzle 564 b defining a second fluid discharge unit. The nozzles 564 can also include a third nozzle 564 c defining a third fluid discharge unit or any other suitable number of nozzles. The dispenser 560 also includes a fluid passageway 568 and a plurality of control valves 570 (identified individually by reference numbers 570 a-c) coupled between the fluid passageway 568 and the nozzles 564. In this embodiment, the control valves include a first control valve 570 a coupled to the first nozzle 564 a, a second control valve 570 b coupled to the second nozzle 564 b, and a third control valve 570 c coupled to the third nozzle 564 c. The control valves 570 can be solenoid valves that are operatively coupled to the controller (not shown in FIG. 9) by signal lines 572 a-c.
  • In operation, a planarizing solution flows through the fluid passageway [0039] 568 to the control valves 570, and the controller adjusts the control valves 570 to provide a plurality of separate planarizing solution flows 574 a-c from the nozzles 564 a-c. The controller can adjust the control valves according to real-time input from sensors during the planarizing cycles of the workpieces and/or from data based upon previous planarizing cycles. This allows the nozzles 564 a-c to independently discharge the planarizing solution flows 574 a-c onto separate regions R1-R3 across the pad 140 to compensate for nonuniformities in planarizing parameters across the pad 140. For example, if region R1 requires less planarizing solution than region R2, then the controller can send a signal to the first control valve 570 a to reduce the first planarizing solution flow 574 a from the first nozzle 564 a. This is only an example, and it will be appreciated that many different combinations of flows can be configured by selecting the desired flow rates through the control valves 570.
  • FIG. 10 shows a planarizing machine [0040] 600 in accordance with another embodiment of the invention. The planarizing machine 600 can have several components that are similar to the planarizing machine 400 shown in FIG. 8, and thus like reference numbers refer to like components in FIGS. 8 and 10. Additionally, the dispenser 460 in FIG. 10 can be similar to the dispenser 560 of FIG. 9. The planarizing machine 600 also includes a sensor assembly 610 that senses a planarizing parameter relative to areas or regions on the contact surface 144 of the pad 140. The sensor assembly. 610 can be embedded in the pad 140, between the pad 140 and the support surface 116, and/or embedded in the support surface 116 of the table 114. The sensor assembly 610 can include temperature sensors that sense the temperature at the contact surface 144, pressure sensors that sense localized forces exerted against the contact surface 144, and/or drag force sensors between the workpiece 131 and the contact surface 144. Suitable sensor assemblies are disclosed in U.S. Pat. Nos. 6,207,764; 6,046,111; 5,036,015; and 5,069,602; and U.S. application Ser. Nos. 09/386,648 and 09/387,309, all of which are herein incorporated by reference. In an alternate embodiment, the sensor assembly can be a sensor 612 positioned above the pad 140. The sensor 612 can be an infrared sensor to measure the temperature gradient across the contact surface, or the sensor 612 can be an optical sensor for sensing another type of parameter. The sensor assembly 610 and the sensor 612 can be coupled to the controller 480 to provide feedback signals of the sensed planarizing parameter.
  • In the operation of the planarizing machine [0041] 600, the sensor assembly 610 senses the planarizing parameter (i.e., temperature, pressure and/or drag force) and sends a corresponding signal to the controller 480. The sensor assembly 610, for example, can sense the differences in the planarizing parameter across the contact surface 144 and send signals to the controller 480 corresponding to a distribution of the planarizing parameter across the contact surface 144. The controller 480 then sends command signals to the fluid discharge units 464 a and 464 b according to the sensed planarizing parameters to independently adjust the flow rates of the planarizing solution flows 450 a and 450 b in a manner that brings or maintains the planarizing parameter within a desired range.
  • FIG. 11 shows a planarizing machine [0042] 700 having a distributor 760 and a controller 780 coupled to the distributor 760 in accordance with another embodiment of the present invention. In this embodiment, the distributor 760 includes a support 762 and a fluid discharge unit 764 moveably coupled to the support 762. The fluid discharge unit 764 can be slidably coupled to the support 762 to translate along the length of the support 762 (indicated by arrow T). In an alternate embodiment, the fluid discharge unit 764 can be rotatably carried by the support 762 (arrow R). The dispenser 760 can further include an actuator 767 coupled to the fluid discharge unit 764, and the support 762 can be a track along which the fluid discharge unit 764 can translate. The actuator 767 can be a servomotor or a linear actuator that drives the fluid discharge unit 764 along the support 762. The actuator 767 can also rotate the fluid discharge unit 764 relative to the support 762 in lieu of, or in addition to, translating the fluid discharge unit 764 along the support 762. The dispenser 760 can also include a fluid passageway 768 coupled to the fluid discharge unit 764. The fluid passageway 768 can be a flexible hose that coils up or elongates according to the movement of the fluid discharge unit 764 along the support 762.
  • The controller [0043] 780 is coupled to the actuator 767 to control the motion of the fluid discharge unit 764 relative to the support 762. The controller 780 can send command signals to the actuator 767 to increase or decrease the velocity of the relative motion between the fluid discharge unit 764 and the arm 762 to adjust the volume of planarizing solution deposited onto different areas of the contact surface 144 of the pad 140. This embodiment allows a single flow of planarizing solution 750 to have different flow characteristics according to the desired distribution of planarizing solution across the contact surface 144.
  • From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims. [0044]

Claims (16)

1-8. (Canceled)
9. A planarizing machine, comprising:
a table having a support surface;
a processing pad on the support surface;
a carrier assembly having a head configured to hold a microelectronic workpiece and a drive assembly carrying the head relative to the support surface;
a solution dispenser separate from the head, the solution dispenser being configured to discharge a planarizing solution onto a Plurality of locations on the Dad;
a temperature sensor to sense a temperature of a contact surface of the processing pad;
a valve coupled to the flow of the planarizing solution; and
a controller coupled to the temperature sensor and the valve, wherein the controller causes the valve to adjust the flow rate of the planarizing solution through the dispenser according to the temperature sensed by the temperature sensor.
10. A planarizing machine, comprising:
a table having a support surface; a processing pad on the support surface;
a carrier assembly having a head configured to hold a microelectronic workpiece and a drive assembly carrying the head relative to the support surface;
a solution dispenser separate from the head, the solution dispenser being configured to discharge a planarizing solution onto a plurality of locations on the pad;
a pressure sensor to sense a pressure between the workpiece and a contact surface of the processing pad;
a valve coupled to the flow of the planarizing solution; and
a controller coupled to the pressure sensor and the valve, wherein the controller causes the valve to adjust the flow rate of the planarizing solution through the dispenser according to the pressure sensed by the pressure sensor.
11. A planarizing machine, comprising:
a table having a support surface;
a processing pad on the support surface;
a carrier assembly having a head configured to hold a microelectronic workpiece and a drive assembly carrying the head relative to the support surface;
a solution dispenser separate from the head, the solution dispenser being configured to discharge a planarizing solution onto a plurality of locations on the pad;
a drag sensor to sense a drag force between the workpiece and a contact surface of the processing pad;
a valve coupled to the flow of the planarizing solution; and
a controller coupled to the drag sensor and the valve, wherein the controller causes the valve to adjust the flow rate of the planarizing solution through the dispenser according to the drag force sensed by the drag sensor.
12-37. (Canceled)
38. A method of processing a microelectronic workpiece, comprising:
removing material from the workpiece by pressing the workpiece against a contact surface of a processing pad and imparting relative motion between the workpiece and the contact surface;
depositing a first flow of a planarizing solution from a dispenser directly onto a first region of the contact surface;
depositing a second flow of the planarizing solution from the dispenser directly onto a second region of the contact surface separate from the first region;
sensing a planarizing parameter while removing material from the workpiece; and
controlling the first and second flows according to the sensed planarizing parameter.
39. A method of processing a microelectronic workpiece, comprising:
removing material from the workpiece by pressing the workpiece against a contact surface of a processing pad and imparting relative motion between the workpiece and the contact surface;
depositing a first flow of a planarizing solution from a dispenser directly onto a first region of the contact surface;
depositing a second flow of the planarizing solution from the dispenser directly onto a second region of the contact surface separate from the first region, wherein depositing the flow of the planarizing solution comprises discharging planarizing solution through a first discharge unit and a second discharge unit, the first discharge unit discharging the first flow and the second discharge unit discharging the second flow;
sensing a planarizing parameter associated with removing material from the workpiece; and
controlling the first and second flows according to the sensed planarizing parameter.
40. The method of claim 39 wherein sensing a planarizing parameter comprises measuring a plurality of temperatures at points across the processing pad.
41. The method of claim 39 wherein sensing a planarizing parameter comprises measuring a plurality of pressures at points across the processing pad.
42. The method of claim 39 wherein sensing a planarizing parameter comprises measuring drag force between the processing pad and the workpiece.
43-54. (Canceled)
55. A method of processing a microelectronic workpiece, comprising:
removing material from the workpiece by pressing the workpiece against a contact surface of a processing pad and imparting relative motion between the workpiece and the contact surface;
discharging a planarizing solution directly onto a first region of the contact surface and a second region of the contact surface separate from the first region;
sensing a parameter of removing material from the workpiece; and
controlling a first volume of planarizing solution discharged onto the first region independently from a second volume of planarizing solution discharged onto a second region.
56. A planarizing machine, comprising:
a table having a support surface;
a processing pad on the support surface;
a carrier assembly having a head configured to hold a microelectronic workpiece and a drive assembly carrying the head relative to the support surface;
a solution dispenser separate from the head, the solution dispenser being configured to discharge a planarizing solution onto a plurality of locations on the pad;
a sensor to sense a parameter relative to areas of the processing pad;
a valve coupled to the flow of the planarizing solution; and
a controller coupled to the sensor and the valve, wherein the controller includes a computer operable medium containing instructions that cause the valve to adjust the flow rate of the planarizing solution through the solution dispenser according to the parameter sensed by the sensor.
57. The planarizing machine of claim 56 wherein the sensor is a temperature sensor.
58. The planarizing machine of claim 56 wherein the sensor is a pressure sensor.
59. The planarizing machine of claim 56 wherein the sensor is a drag force sensor.
US10/828,017 2001-08-24 2004-04-20 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces Abandoned US20040209548A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US09/939,430 US6722943B2 (en) 2001-08-24 2001-08-24 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US10/828,017 US20040209548A1 (en) 2001-08-24 2004-04-20 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/828,017 US20040209548A1 (en) 2001-08-24 2004-04-20 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US09/939,430 Division US6722943B2 (en) 2001-08-24 2001-08-24 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces

Publications (1)

Publication Number Publication Date
US20040209548A1 true US20040209548A1 (en) 2004-10-21

Family

ID=27613892

Family Applications (4)

Application Number Title Priority Date Filing Date
US09/939,430 Active 2021-11-09 US6722943B2 (en) 2001-08-24 2001-08-24 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US10/828,427 Abandoned US20040209549A1 (en) 2001-08-24 2004-04-20 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US10/828,017 Abandoned US20040209548A1 (en) 2001-08-24 2004-04-20 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US10/828,403 Expired - Fee Related US7210989B2 (en) 2001-08-24 2004-04-20 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces

Family Applications Before (2)

Application Number Title Priority Date Filing Date
US09/939,430 Active 2021-11-09 US6722943B2 (en) 2001-08-24 2001-08-24 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US10/828,427 Abandoned US20040209549A1 (en) 2001-08-24 2004-04-20 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces

Family Applications After (1)

Application Number Title Priority Date Filing Date
US10/828,403 Expired - Fee Related US7210989B2 (en) 2001-08-24 2004-04-20 Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces

Country Status (1)

Country Link
US (4) US6722943B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040198184A1 (en) * 2001-08-24 2004-10-07 Joslyn Michael J Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US7708622B2 (en) 2003-02-11 2010-05-04 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100443770B1 (en) * 2001-03-26 2004-08-09 삼성전자주식회사 Method and apparatus for polishing a substrate
US6953391B1 (en) * 2002-03-30 2005-10-11 Lam Research Corporation Methods for reducing slurry usage in a linear chemical mechanical planarization system
US20040011462A1 (en) * 2002-06-28 2004-01-22 Lam Research Corporation Method and apparatus for applying differential removal rates to a surface of a substrate
US7309618B2 (en) * 2002-06-28 2007-12-18 Lam Research Corporation Method and apparatus for real time metal film thickness measurement
US6884145B2 (en) * 2002-11-22 2005-04-26 Samsung Austin Semiconductor, L.P. High selectivity slurry delivery system
US6872132B2 (en) * 2003-03-03 2005-03-29 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
US6984166B2 (en) * 2003-08-01 2006-01-10 Chartered Semiconductor Manufacturing Ltd. Zone polishing using variable slurry solid content
JP2005177897A (en) * 2003-12-17 2005-07-07 Nec Electronics Corp Polishing method, polishing device, and method of manufacturing semiconductor device
US20050164603A1 (en) * 2004-01-22 2005-07-28 House Colby J. Pivotable slurry arm
JP2005268566A (en) * 2004-03-19 2005-09-29 Ebara Corp Head structure of substrate holding mechanism of chemical mechanical polishing device
US20060027533A1 (en) * 2004-08-06 2006-02-09 Yaojian Leng System for dynamic slurry delivery in a CMP process
US7052374B1 (en) * 2005-03-01 2006-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Multipurpose slurry delivery arm for chemical mechanical polishing
US20070219103A1 (en) * 2006-03-17 2007-09-20 Applied Materials, Inc. Novel rinse solution to remove cross-contamination
DE102006056623A1 (en) * 2006-11-30 2008-06-05 Advanced Micro Devices, Inc., Sunnyvale System for chemical mechanical polishing, has controllable movable foreman head, which is formed to mount substrate and to hold in position, and foreman cushion, is mounted on plate, which is coupled with drive arrangement
CN102124545B (en) 2008-08-14 2013-11-06 应用材料公司 Chemical mechanical polisher having movable slurry dispensers and method
US8414357B2 (en) * 2008-08-22 2013-04-09 Applied Materials, Inc. Chemical mechanical polisher having movable slurry dispensers and method
US8893519B2 (en) * 2008-12-08 2014-11-25 The Hong Kong University Of Science And Technology Providing cooling in a machining process using a plurality of activated coolant streams
US8360817B2 (en) * 2009-04-01 2013-01-29 Ebara Corporation Polishing apparatus and polishing method
CN102335869A (en) * 2010-07-21 2012-02-01 中芯国际集成电路制造(上海)有限公司 Chemical mechanical polishing device and method
CN104637836A (en) * 2013-11-14 2015-05-20 盛美半导体设备(上海)有限公司 Wafer processing apparatus
KR101637537B1 (en) * 2014-07-01 2016-07-08 주식회사 케이씨텍 Chemical mechanical polishing apparatus and method
CN104308744A (en) * 2014-08-26 2015-01-28 上海华力微电子有限公司 Chemical mechanical grinding liquid supply device

Citations (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2557106A (en) * 1946-04-12 1951-06-19 Francis B Hughes High-pressure oil-nozzle for grindings
US4530463A (en) * 1982-08-05 1985-07-23 Hiniker Company Control method and apparatus for liquid distributor
US5081796A (en) * 1990-08-06 1992-01-21 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US5186394A (en) * 1990-10-02 1993-02-16 Nippon Thompson Co., Ltd. Remote controlled freely pivotal nozzle
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5297364A (en) * 1990-01-22 1994-03-29 Micron Technology, Inc. Polishing pad with controlled abrasion rate
US5421769A (en) * 1990-01-22 1995-06-06 Micron Technology, Inc. Apparatus for planarizing semiconductor wafers, and a polishing pad for a planarization apparatus
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
US5486129A (en) * 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
US5514245A (en) * 1992-01-27 1996-05-07 Micron Technology, Inc. Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches
US5533924A (en) * 1994-09-01 1996-07-09 Micron Technology, Inc. Polishing apparatus, a polishing wafer carrier apparatus, a replacable component for a particular polishing apparatus and a process of polishing wafers
US5540810A (en) * 1992-12-11 1996-07-30 Micron Technology Inc. IC mechanical planarization process incorporating two slurry compositions for faster material removal times
US5616069A (en) * 1995-12-19 1997-04-01 Micron Technology, Inc. Directional spray pad scrubber
US5618381A (en) * 1992-01-24 1997-04-08 Micron Technology, Inc. Multiple step method of chemical-mechanical polishing which minimizes dishing
US5643060A (en) * 1993-08-25 1997-07-01 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including heater
US5645682A (en) * 1996-05-28 1997-07-08 Micron Technology, Inc. Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers
US5725417A (en) * 1996-11-05 1998-03-10 Micron Technology, Inc. Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates
US5730642A (en) * 1993-08-25 1998-03-24 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical montoring
US5747386A (en) * 1996-10-03 1998-05-05 Micron Technology, Inc. Rotary coupling
US5782675A (en) * 1996-10-21 1998-07-21 Micron Technology, Inc. Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers
US5868896A (en) * 1996-11-06 1999-02-09 Micron Technology, Inc. Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers
US5879226A (en) * 1996-05-21 1999-03-09 Micron Technology, Inc. Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
US5882248A (en) * 1995-12-15 1999-03-16 Micron Technology, Inc. Apparatus for separating wafers from polishing pads used in chemical-mechanical planarization of semiconductor wafers
US5887757A (en) * 1997-01-31 1999-03-30 Nordson Corporation Rotary angled nozzle for heated fluid dispensers
US5893754A (en) * 1996-05-21 1999-04-13 Micron Technology, Inc. Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers
US5895550A (en) * 1996-12-16 1999-04-20 Micron Technology, Inc. Ultrasonic processing of chemical mechanical polishing slurries
US5910043A (en) * 1996-08-20 1999-06-08 Micron Technology, Inc. Polishing pad for chemical-mechanical planarization of a semiconductor wafer
US5916819A (en) * 1996-07-17 1999-06-29 Micron Technology, Inc. Planarization fluid composition chelating agents and planarization method using same
US5930699A (en) * 1996-11-12 1999-07-27 Ericsson Inc. Address retrieval system
US6039633A (en) * 1998-10-01 2000-03-21 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies
US6050884A (en) * 1996-02-28 2000-04-18 Ebara Corporation Polishing apparatus
US6054015A (en) * 1996-10-31 2000-04-25 Micron Technology, Inc. Apparatus for loading and unloading substrates to a chemical-mechanical planarization machine
US6053801A (en) * 1999-05-10 2000-04-25 Applied Materials, Inc. Substrate polishing with reduced contamination
US6060395A (en) * 1996-07-17 2000-05-09 Micron Technology, Inc. Planarization method using a slurry including a dispersant
US6066030A (en) * 1999-03-04 2000-05-23 International Business Machines Corporation Electroetch and chemical mechanical polishing equipment
US6074286A (en) * 1998-01-05 2000-06-13 Micron Technology, Inc. Wafer processing apparatus and method of processing a wafer utilizing a processing slurry
US6083085A (en) * 1997-12-22 2000-07-04 Micron Technology, Inc. Method and apparatus for planarizing microelectronic substrates and conditioning planarizing media
US6176763B1 (en) * 1999-02-04 2001-01-23 Micron Technology, Inc. Method and apparatus for uniformly planarizing a microelectronic substrate
US6176992B1 (en) * 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6180525B1 (en) * 1998-08-19 2001-01-30 Micron Technology, Inc. Method of minimizing repetitive chemical-mechanical polishing scratch marks and of processing a semiconductor wafer outer surface
US6187681B1 (en) * 1998-10-14 2001-02-13 Micron Technology, Inc. Method and apparatus for planarization of a substrate
US6191037B1 (en) * 1998-09-03 2001-02-20 Micron Technology, Inc. Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes
US6193588B1 (en) * 1998-09-02 2001-02-27 Micron Technology, Inc. Method and apparatus for planarizing and cleaning microelectronic substrates
US6196899B1 (en) * 1999-06-21 2001-03-06 Micron Technology, Inc. Polishing apparatus
US6200901B1 (en) * 1998-06-10 2001-03-13 Micron Technology, Inc. Polishing polymer surfaces on non-porous CMP pads
US6203413B1 (en) * 1999-01-13 2001-03-20 Micron Technology, Inc. Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6203404B1 (en) * 1999-06-03 2001-03-20 Micron Technology, Inc. Chemical mechanical polishing methods
US6206757B1 (en) * 1997-12-04 2001-03-27 Micron Technology, Inc. Polishing systems, methods of polishing substrates, and methods of preparing liquids for semiconductor fabrication processes
US6206756B1 (en) * 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6210257B1 (en) * 1998-05-29 2001-04-03 Micron Technology, Inc. Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates
US6213845B1 (en) * 1999-04-26 2001-04-10 Micron Technology, Inc. Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same
US6218316B1 (en) * 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6220934B1 (en) * 1998-07-23 2001-04-24 Micron Technology, Inc. Method for controlling pH during planarization and cleaning of microelectronic substrates
US6227955B1 (en) * 1999-04-20 2001-05-08 Micron Technology, Inc. Carrier heads, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6234878B1 (en) * 1999-08-31 2001-05-22 Micron Technology, Inc. Endpoint detection apparatus, planarizing machines with endpointing apparatus, and endpointing methods for mechanical or chemical-mechanical planarization of microelectronic substrate assemblies
US6234877B1 (en) * 1997-06-09 2001-05-22 Micron Technology, Inc. Method of chemical mechanical polishing
US6237483B1 (en) * 1995-11-17 2001-05-29 Micron Technology, Inc. Global planarization method and apparatus
US6251785B1 (en) * 1995-06-02 2001-06-26 Micron Technology, Inc. Apparatus and method for polishing a semiconductor wafer in an overhanging position
US6250994B1 (en) * 1998-10-01 2001-06-26 Micron Technology, Inc. Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads
US6338669B1 (en) * 1997-12-26 2002-01-15 Ebara Corporation Polishing device
US20020022440A1 (en) * 2000-04-06 2002-02-21 Takaharu Kunugi Supply of controlled amount of polishing slurry to semiconductor wafers
US6350183B2 (en) * 1999-08-10 2002-02-26 International Business Machines Corporation High pressure cleaning
US6350180B2 (en) * 1999-08-31 2002-02-26 Micron Technology, Inc. Methods for predicting polishing parameters of polishing pads, and methods and machines for planarizing microelectronic substrate assemblies in mechanical or chemical-mechanical planarization
US6352466B1 (en) * 1998-08-31 2002-03-05 Micron Technology, Inc. Method and apparatus for wireless transfer of chemical-mechanical planarization measurements
US6352470B2 (en) * 1999-08-31 2002-03-05 Micron Technology, Inc. Method and apparatus for supporting and cleaning a polishing pad for chemical-mechanical planarization of microelectronic substrates
US6354930B1 (en) * 1997-12-30 2002-03-12 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates
US6358122B1 (en) * 1999-08-31 2002-03-19 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives
US6358129B2 (en) * 1998-11-11 2002-03-19 Micron Technology, Inc. Backing members and planarizing machines for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods of making and using such backing members
US6361417B2 (en) * 1999-08-31 2002-03-26 Micron Technology, Inc. Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates
US6368190B1 (en) * 2000-01-26 2002-04-09 Agere Systems Guardian Corp. Electrochemical mechanical planarization apparatus and method
US6376381B1 (en) * 1999-08-31 2002-04-23 Micron Technology, Inc. Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6375548B1 (en) * 1999-12-30 2002-04-23 Micron Technology, Inc. Chemical-mechanical polishing methods
US6398627B1 (en) * 2001-03-22 2002-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispenser having multiple adjustable nozzles
US20030027505A1 (en) * 2001-08-02 2003-02-06 Applied Materials, Inc. Multiport polishing fluid delivery system
US6551174B1 (en) * 1998-09-25 2003-04-22 Applied Materials, Inc. Supplying slurry to a polishing pad in a chemical mechanical polishing system
US20030096559A1 (en) * 2000-08-09 2003-05-22 Brian Marshall Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates
US6568408B2 (en) * 1997-09-24 2003-05-27 Interuniversitair Microelektronica Centrum (Imec, Vzw) Method and apparatus for removing a liquid from a surface of a rotating substrate
US6722943B2 (en) * 2001-08-24 2004-04-20 Micron Technology, Inc. Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US20040087258A1 (en) * 1999-04-08 2004-05-06 Norio Kimura Polishing method and apparatus
US6878232B2 (en) * 2002-12-17 2005-04-12 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for improving a temperature controlled solution delivery process
US6884152B2 (en) * 2003-02-11 2005-04-26 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
USRE34425E (en) 1990-08-06 1993-11-02 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US5069002A (en) 1991-04-17 1991-12-03 Micron Technology, Inc. Apparatus for endpoint detection during mechanical planarization of semiconductor wafers
US5240552A (en) 1991-12-11 1993-08-31 Micron Technology, Inc. Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection
US5244534A (en) 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5245790A (en) 1992-02-14 1993-09-21 Lsi Logic Corporation Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
US5245796A (en) 1992-04-02 1993-09-21 At&T Bell Laboratories Slurry polisher using ultrasonic agitation
US5232875A (en) 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations
US5700180A (en) 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
US5456627A (en) * 1993-12-20 1995-10-10 Westech Systems, Inc. Conditioner for a polishing pad and method therefor
JP3036348B2 (en) * 1994-03-23 2000-04-24 三菱マテリアル株式会社 Wafer polishing pad of the truing apparatus
US5449314A (en) 1994-04-25 1995-09-12 Micron Technology, Inc. Method of chimical mechanical polishing for dielectric layers
US5795495A (en) 1994-04-25 1998-08-18 Micron Technology, Inc. Method of chemical mechanical polishing for dielectric layers
JP3734289B2 (en) * 1995-01-24 2006-01-11 株式会社東芝 Polishing apparatus
US6110820A (en) 1995-06-07 2000-08-29 Micron Technology, Inc. Low scratch density chemical mechanical planarization process
US5655951A (en) 1995-09-29 1997-08-12 Micron Technology, Inc. Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
US5609718A (en) 1995-09-29 1997-03-11 Micron Technology, Inc. Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers
US5792709A (en) 1995-12-19 1998-08-11 Micron Technology, Inc. High-speed planarizing apparatus and method for chemical mechanical planarization of semiconductor wafers
US6135856A (en) 1996-01-19 2000-10-24 Micron Technology, Inc. Apparatus and method for semiconductor planarization
US5938801A (en) * 1997-02-12 1999-08-17 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
US5624303A (en) * 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
US5618447A (en) * 1996-02-13 1997-04-08 Micron Technology, Inc. Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers
US5679065A (en) 1996-02-23 1997-10-21 Micron Technology, Inc. Wafer carrier having carrier ring adapted for uniform chemical-mechanical planarization of semiconductor wafers
US5690540A (en) * 1996-02-23 1997-11-25 Micron Technology, Inc. Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers
US5733176A (en) * 1996-05-24 1998-03-31 Micron Technology, Inc. Polishing pad and method of use
US6090475A (en) * 1996-05-24 2000-07-18 Micron Technology Inc. Polishing pad, methods of manufacturing and use
US5976000A (en) * 1996-05-28 1999-11-02 Micron Technology, Inc. Polishing pad with incompressible, highly soluble particles for chemical-mechanical planarization of semiconductor wafers
US5681423A (en) * 1996-06-06 1997-10-28 Micron Technology, Inc. Semiconductor wafer for improved chemical-mechanical polishing over large area features
US5871392A (en) * 1996-06-13 1999-02-16 Micron Technology, Inc. Under-pad for chemical-mechanical planarization of semiconductor wafers
US5664990A (en) * 1996-07-29 1997-09-09 Integrated Process Equipment Corp. Slurry recycling in CMP apparatus
US5833519A (en) 1996-08-06 1998-11-10 Micron Technology, Inc. Method and apparatus for mechanical polishing
US5795218A (en) * 1996-09-30 1998-08-18 Micron Technology, Inc. Polishing pad with elongated microcolumns
US5736427A (en) * 1996-10-08 1998-04-07 Micron Technology, Inc. Polishing pad contour indicator for mechanical or chemical-mechanical planarization
US6395620B1 (en) * 1996-10-08 2002-05-28 Micron Technology, Inc. Method for forming a planar surface over low density field areas on a semiconductor wafer
US5830806A (en) 1996-10-18 1998-11-03 Micron Technology, Inc. Wafer backing member for mechanical and chemical-mechanical planarization of substrates
US5972792A (en) 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5807165A (en) 1997-03-26 1998-09-15 International Business Machines Corporation Method of electrochemical mechanical planarization
US6062958A (en) * 1997-04-04 2000-05-16 Micron Technology, Inc. Variable abrasive polishing pad for mechanical and chemical-mechanical planarization
US6331488B1 (en) 1997-05-23 2001-12-18 Micron Technology, Inc. Planarization process for semiconductor substrates
JP3722591B2 (en) * 1997-05-30 2005-11-30 株式会社日立製作所 Polishing apparatus
US5975994A (en) 1997-06-11 1999-11-02 Micron Technology, Inc. Method and apparatus for selectively conditioning a polished pad used in planarizng substrates
US6139406A (en) * 1997-06-24 2000-10-31 Applied Materials, Inc. Combined slurry dispenser and rinse arm and method of operation
US6271139B1 (en) 1997-07-02 2001-08-07 Micron Technology, Inc. Polishing slurry and method for chemical-mechanical polishing
US5997392A (en) * 1997-07-22 1999-12-07 International Business Machines Corporation Slurry injection technique for chemical-mechanical polishing
US6099604A (en) 1997-08-21 2000-08-08 Micron Technology, Inc. Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto
US5919082A (en) * 1997-08-22 1999-07-06 Micron Technology, Inc. Fixed abrasive polishing pad
US5964413A (en) * 1997-11-05 1999-10-12 Mok; Peter Apparatus for dispensing slurry
US5997384A (en) 1997-12-22 1999-12-07 Micron Technology, Inc. Method and apparatus for controlling planarizing characteristics in mechanical and chemical-mechanical planarization of microelectronic substrates
US5990012A (en) 1998-01-27 1999-11-23 Micron Technology, Inc. Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads
US6224466B1 (en) * 1998-02-02 2001-05-01 Micron Technology, Inc. Methods of polishing materials, methods of slowing a rate of material removal of a polishing process
US6004196A (en) 1998-02-27 1999-12-21 Micron Technology, Inc. Polishing pad refurbisher for in situ, real-time conditioning and cleaning of a polishing pad used in chemical-mechanical polishing of microelectronic substrates
US6143155A (en) 1998-06-11 2000-11-07 Speedfam Ipec Corp. Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly
US6036586A (en) * 1998-07-29 2000-03-14 Micron Technology, Inc. Apparatus and method for reducing removal forces for CMP pads
US6152808A (en) 1998-08-25 2000-11-28 Micron Technology, Inc. Microelectronic substrate polishing systems, semiconductor wafer polishing systems, methods of polishing microelectronic substrates, and methods of polishing wafers
US6124207A (en) 1998-08-31 2000-09-26 Micron Technology, Inc. Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries
US6273785B1 (en) * 1998-09-02 2001-08-14 Xerox Corporation Non-contact support for cyclindrical machining
US6203407B1 (en) * 1998-09-03 2001-03-20 Micron Technology, Inc. Method and apparatus for increasing-chemical-polishing selectivity
US6179693B1 (en) * 1998-10-06 2001-01-30 International Business Machines Corporation In-situ/self-propelled polishing pad conditioner and cleaner
US6276996B1 (en) 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6156659A (en) * 1998-11-19 2000-12-05 Chartered Semiconductor Manufacturing Ltd. Linear CMP tool design with closed loop slurry distribution
US6206759B1 (en) * 1998-11-30 2001-03-27 Micron Technology, Inc. Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines
US6439977B1 (en) * 1998-12-07 2002-08-27 Chartered Semiconductor Manufacturing Ltd. Rotational slurry distribution system for rotary CMP system
US6300247B2 (en) * 1999-03-29 2001-10-09 Applied Materials, Inc. Preconditioning polishing pads for chemical-mechanical polishing
US6296557B1 (en) * 1999-04-02 2001-10-02 Micron Technology, Inc. Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6599836B1 (en) * 1999-04-09 2003-07-29 Micron Technology, Inc. Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US20030213772A9 (en) * 1999-07-09 2003-11-20 Mok Yeuk-Fai Edwin Integrated semiconductor substrate bevel cleaning apparatus and method
US6306012B1 (en) 1999-07-20 2001-10-23 Micron Technology, Inc. Methods and apparatuses for planarizing microelectronic substrate assemblies
US6284092B1 (en) * 1999-08-06 2001-09-04 International Business Machines Corporation CMP slurry atomization slurry dispense system
US6267650B1 (en) 1999-08-09 2001-07-31 Micron Technology, Inc. Apparatus and methods for substantial planarization of solder bumps
US6261163B1 (en) 1999-08-30 2001-07-17 Micron Technology, Inc. Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies
US6328632B1 (en) * 1999-08-31 2001-12-11 Micron Technology, Inc. Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6306008B1 (en) 1999-08-31 2001-10-23 Micron Technology, Inc. Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization
US6273796B1 (en) 1999-09-01 2001-08-14 Micron Technology, Inc. Method and apparatus for planarizing a microelectronic substrate with a tilted planarizing surface
US6364749B1 (en) * 1999-09-02 2002-04-02 Micron Technology, Inc. CMP polishing pad with hydrophilic surfaces for enhanced wetting
US6383934B1 (en) * 1999-09-02 2002-05-07 Micron Technology, Inc. Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids
US6284660B1 (en) 1999-09-02 2001-09-04 Micron Technology, Inc. Method for improving CMP processing
US6809348B1 (en) * 1999-10-08 2004-10-26 Denso Corporation Semiconductor device and method for manufacturing the same
US6306768B1 (en) * 1999-11-17 2001-10-23 Micron Technology, Inc. Method for planarizing microelectronic substrates having apertures
US6331136B1 (en) * 2000-01-25 2001-12-18 Koninklijke Philips Electronics N.V. (Kpenv) CMP pad conditioner arrangement and method therefor
US6290572B1 (en) * 2000-03-23 2001-09-18 Micron Technology, Inc. Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6313038B1 (en) * 2000-04-26 2001-11-06 Micron Technology, Inc. Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates
US6387289B1 (en) * 2000-05-04 2002-05-14 Micron Technology, Inc. Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6428386B1 (en) * 2000-06-16 2002-08-06 Micron Technology, Inc. Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6447369B1 (en) * 2000-08-30 2002-09-10 Micron Technology, Inc. Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates
US6592443B1 (en) * 2000-08-30 2003-07-15 Micron Technology, Inc. Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US6609947B1 (en) * 2000-08-30 2003-08-26 Micron Technology, Inc. Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates
US6623329B1 (en) * 2000-08-31 2003-09-23 Micron Technology, Inc. Method and apparatus for supporting a microelectronic substrate relative to a planarization pad
US6652764B1 (en) * 2000-08-31 2003-11-25 Micron Technology, Inc. Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates
US6482290B1 (en) * 2001-08-10 2002-11-19 Taiwan Semiconductor Manufacturing Co., Ltd Sweeping slurry dispenser for chemical mechanical polishing
US6939210B2 (en) * 2003-05-02 2005-09-06 Applied Materials, Inc. Slurry delivery arm

Patent Citations (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2557106A (en) * 1946-04-12 1951-06-19 Francis B Hughes High-pressure oil-nozzle for grindings
US4530463A (en) * 1982-08-05 1985-07-23 Hiniker Company Control method and apparatus for liquid distributor
US5421769A (en) * 1990-01-22 1995-06-06 Micron Technology, Inc. Apparatus for planarizing semiconductor wafers, and a polishing pad for a planarization apparatus
US5297364A (en) * 1990-01-22 1994-03-29 Micron Technology, Inc. Polishing pad with controlled abrasion rate
US5081796A (en) * 1990-08-06 1992-01-21 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US5186394A (en) * 1990-10-02 1993-02-16 Nippon Thompson Co., Ltd. Remote controlled freely pivotal nozzle
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US5618381A (en) * 1992-01-24 1997-04-08 Micron Technology, Inc. Multiple step method of chemical-mechanical polishing which minimizes dishing
US5514245A (en) * 1992-01-27 1996-05-07 Micron Technology, Inc. Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US6040245A (en) * 1992-12-11 2000-03-21 Micron Technology, Inc. IC mechanical planarization process incorporating two slurry compositions for faster material removal times
US5540810A (en) * 1992-12-11 1996-07-30 Micron Technology Inc. IC mechanical planarization process incorporating two slurry compositions for faster material removal times
US5643060A (en) * 1993-08-25 1997-07-01 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including heater
US5486129A (en) * 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
US5730642A (en) * 1993-08-25 1998-03-24 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical montoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
US5533924A (en) * 1994-09-01 1996-07-09 Micron Technology, Inc. Polishing apparatus, a polishing wafer carrier apparatus, a replacable component for a particular polishing apparatus and a process of polishing wafers
US6251785B1 (en) * 1995-06-02 2001-06-26 Micron Technology, Inc. Apparatus and method for polishing a semiconductor wafer in an overhanging position
US6237483B1 (en) * 1995-11-17 2001-05-29 Micron Technology, Inc. Global planarization method and apparatus
US5882248A (en) * 1995-12-15 1999-03-16 Micron Technology, Inc. Apparatus for separating wafers from polishing pads used in chemical-mechanical planarization of semiconductor wafers
US5616069A (en) * 1995-12-19 1997-04-01 Micron Technology, Inc. Directional spray pad scrubber
US5779522A (en) * 1995-12-19 1998-07-14 Micron Technology, Inc. Directional spray pad scrubber
US6050884A (en) * 1996-02-28 2000-04-18 Ebara Corporation Polishing apparatus
US6238270B1 (en) * 1996-05-21 2001-05-29 Micron Technology, Inc. Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
US5879226A (en) * 1996-05-21 1999-03-09 Micron Technology, Inc. Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
US5893754A (en) * 1996-05-21 1999-04-13 Micron Technology, Inc. Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers
US5645682A (en) * 1996-05-28 1997-07-08 Micron Technology, Inc. Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers
US6060395A (en) * 1996-07-17 2000-05-09 Micron Technology, Inc. Planarization method using a slurry including a dispersant
US5916819A (en) * 1996-07-17 1999-06-29 Micron Technology, Inc. Planarization fluid composition chelating agents and planarization method using same
US5910043A (en) * 1996-08-20 1999-06-08 Micron Technology, Inc. Polishing pad for chemical-mechanical planarization of a semiconductor wafer
US5747386A (en) * 1996-10-03 1998-05-05 Micron Technology, Inc. Rotary coupling
US5782675A (en) * 1996-10-21 1998-07-21 Micron Technology, Inc. Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers
US6054015A (en) * 1996-10-31 2000-04-25 Micron Technology, Inc. Apparatus for loading and unloading substrates to a chemical-mechanical planarization machine
US5725417A (en) * 1996-11-05 1998-03-10 Micron Technology, Inc. Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates
US5868896A (en) * 1996-11-06 1999-02-09 Micron Technology, Inc. Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers
US5930699A (en) * 1996-11-12 1999-07-27 Ericsson Inc. Address retrieval system
US6077785A (en) * 1996-12-16 2000-06-20 Micron Technology, Inc. Ultrasonic processing of chemical mechanical polishing slurries
US5895550A (en) * 1996-12-16 1999-04-20 Micron Technology, Inc. Ultrasonic processing of chemical mechanical polishing slurries
US5887757A (en) * 1997-01-31 1999-03-30 Nordson Corporation Rotary angled nozzle for heated fluid dispensers
US6234877B1 (en) * 1997-06-09 2001-05-22 Micron Technology, Inc. Method of chemical mechanical polishing
US6568408B2 (en) * 1997-09-24 2003-05-27 Interuniversitair Microelektronica Centrum (Imec, Vzw) Method and apparatus for removing a liquid from a surface of a rotating substrate
US6206757B1 (en) * 1997-12-04 2001-03-27 Micron Technology, Inc. Polishing systems, methods of polishing substrates, and methods of preparing liquids for semiconductor fabrication processes
US6083085A (en) * 1997-12-22 2000-07-04 Micron Technology, Inc. Method and apparatus for planarizing microelectronic substrates and conditioning planarizing media
US6354923B1 (en) * 1997-12-22 2002-03-12 Micron Technology, Inc. Apparatus for planarizing microelectronic substrates and conditioning planarizing media
US6350691B1 (en) * 1997-12-22 2002-02-26 Micron Technology, Inc. Method and apparatus for planarizing microelectronic substrates and conditioning planarizing media
US6338669B1 (en) * 1997-12-26 2002-01-15 Ebara Corporation Polishing device
US6364757B2 (en) * 1997-12-30 2002-04-02 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates
US6354930B1 (en) * 1997-12-30 2002-03-12 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates
US6354917B1 (en) * 1998-01-05 2002-03-12 Micron Technology, Inc. Method of processing a wafer utilizing a processing slurry
US6074286A (en) * 1998-01-05 2000-06-13 Micron Technology, Inc. Wafer processing apparatus and method of processing a wafer utilizing a processing slurry
US6234874B1 (en) * 1998-01-05 2001-05-22 Micron Technology, Inc. Wafer processing apparatus
US6210257B1 (en) * 1998-05-29 2001-04-03 Micron Technology, Inc. Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates
US6200901B1 (en) * 1998-06-10 2001-03-13 Micron Technology, Inc. Polishing polymer surfaces on non-porous CMP pads
US6368194B1 (en) * 1998-07-23 2002-04-09 Micron Technology, Inc. Apparatus for controlling PH during planarization and cleaning of microelectronic substrates
US6220934B1 (en) * 1998-07-23 2001-04-24 Micron Technology, Inc. Method for controlling pH during planarization and cleaning of microelectronic substrates
US6180525B1 (en) * 1998-08-19 2001-01-30 Micron Technology, Inc. Method of minimizing repetitive chemical-mechanical polishing scratch marks and of processing a semiconductor wafer outer surface
US6352466B1 (en) * 1998-08-31 2002-03-05 Micron Technology, Inc. Method and apparatus for wireless transfer of chemical-mechanical planarization measurements
US6358127B1 (en) * 1998-09-02 2002-03-19 Micron Technology, Inc. Method and apparatus for planarizing and cleaning microelectronic substrates
US6193588B1 (en) * 1998-09-02 2001-02-27 Micron Technology, Inc. Method and apparatus for planarizing and cleaning microelectronic substrates
US6368193B1 (en) * 1998-09-02 2002-04-09 Micron Technology, Inc. Method and apparatus for planarizing and cleaning microelectronic substrates
US6191037B1 (en) * 1998-09-03 2001-02-20 Micron Technology, Inc. Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes
US20030054651A1 (en) * 1998-09-03 2003-03-20 Robinson Karl M. Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes
US6551174B1 (en) * 1998-09-25 2003-04-22 Applied Materials, Inc. Supplying slurry to a polishing pad in a chemical mechanical polishing system
US6039633A (en) * 1998-10-01 2000-03-21 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies
US6250994B1 (en) * 1998-10-01 2001-06-26 Micron Technology, Inc. Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads
US6187681B1 (en) * 1998-10-14 2001-02-13 Micron Technology, Inc. Method and apparatus for planarization of a substrate
US6218316B1 (en) * 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6176992B1 (en) * 1998-11-03 2001-01-23 Nutool, Inc. Method and apparatus for electro-chemical mechanical deposition
US6206756B1 (en) * 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6358129B2 (en) * 1998-11-11 2002-03-19 Micron Technology, Inc. Backing members and planarizing machines for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods of making and using such backing members
US6203413B1 (en) * 1999-01-13 2001-03-20 Micron Technology, Inc. Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6361413B1 (en) * 1999-01-13 2002-03-26 Micron Technology, Inc. Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic device substrate assemblies
US6176763B1 (en) * 1999-02-04 2001-01-23 Micron Technology, Inc. Method and apparatus for uniformly planarizing a microelectronic substrate
US6066030A (en) * 1999-03-04 2000-05-23 International Business Machines Corporation Electroetch and chemical mechanical polishing equipment
US20040087258A1 (en) * 1999-04-08 2004-05-06 Norio Kimura Polishing method and apparatus
US6227955B1 (en) * 1999-04-20 2001-05-08 Micron Technology, Inc. Carrier heads, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6213845B1 (en) * 1999-04-26 2001-04-10 Micron Technology, Inc. Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same
US6053801A (en) * 1999-05-10 2000-04-25 Applied Materials, Inc. Substrate polishing with reduced contamination
US6203404B1 (en) * 1999-06-03 2001-03-20 Micron Technology, Inc. Chemical mechanical polishing methods
US6196899B1 (en) * 1999-06-21 2001-03-06 Micron Technology, Inc. Polishing apparatus
US6361411B1 (en) * 1999-06-21 2002-03-26 Micron Technology, Inc. Method for conditioning polishing surface
US6350183B2 (en) * 1999-08-10 2002-02-26 International Business Machines Corporation High pressure cleaning
US6234878B1 (en) * 1999-08-31 2001-05-22 Micron Technology, Inc. Endpoint detection apparatus, planarizing machines with endpointing apparatus, and endpointing methods for mechanical or chemical-mechanical planarization of microelectronic substrate assemblies
US6361417B2 (en) * 1999-08-31 2002-03-26 Micron Technology, Inc. Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates
US6368197B2 (en) * 1999-08-31 2002-04-09 Micron Technology, Inc. Method and apparatus for supporting and cleaning a polishing pad for chemical-mechanical planarization of microelectronic substrates
US6358122B1 (en) * 1999-08-31 2002-03-19 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives
US6376381B1 (en) * 1999-08-31 2002-04-23 Micron Technology, Inc. Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6350180B2 (en) * 1999-08-31 2002-02-26 Micron Technology, Inc. Methods for predicting polishing parameters of polishing pads, and methods and machines for planarizing microelectronic substrate assemblies in mechanical or chemical-mechanical planarization
US6352470B2 (en) * 1999-08-31 2002-03-05 Micron Technology, Inc. Method and apparatus for supporting and cleaning a polishing pad for chemical-mechanical planarization of microelectronic substrates
US6375548B1 (en) * 1999-12-30 2002-04-23 Micron Technology, Inc. Chemical-mechanical polishing methods
US6368190B1 (en) * 2000-01-26 2002-04-09 Agere Systems Guardian Corp. Electrochemical mechanical planarization apparatus and method
US20020022440A1 (en) * 2000-04-06 2002-02-21 Takaharu Kunugi Supply of controlled amount of polishing slurry to semiconductor wafers
US20030096559A1 (en) * 2000-08-09 2003-05-22 Brian Marshall Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates
US6398627B1 (en) * 2001-03-22 2002-06-04 Taiwan Semiconductor Manufacturing Co., Ltd. Slurry dispenser having multiple adjustable nozzles
US20030027505A1 (en) * 2001-08-02 2003-02-06 Applied Materials, Inc. Multiport polishing fluid delivery system
US6722943B2 (en) * 2001-08-24 2004-04-20 Micron Technology, Inc. Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US6878232B2 (en) * 2002-12-17 2005-04-12 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for improving a temperature controlled solution delivery process
US6884152B2 (en) * 2003-02-11 2005-04-26 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040198184A1 (en) * 2001-08-24 2004-10-07 Joslyn Michael J Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces
US7708622B2 (en) 2003-02-11 2010-05-04 Micron Technology, Inc. Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces

Also Published As

Publication number Publication date
US20040198184A1 (en) 2004-10-07
US7210989B2 (en) 2007-05-01
US20030143927A1 (en) 2003-07-31
US20040209549A1 (en) 2004-10-21
US6722943B2 (en) 2004-04-20

Similar Documents

Publication Publication Date Title
US6627098B2 (en) Carrier heads, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6599836B1 (en) Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6250994B1 (en) Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads
US7988537B2 (en) Substrate holding apparatus and polishing apparatus
US6086456A (en) Polishing method using a hydrostatic fluid bearing support having fluctuating fluid flow
US6361413B1 (en) Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic device substrate assemblies
US6533647B1 (en) Method for controlling a selected temperature of a planarizing surface of a polish pad.
US6186870B1 (en) Variable abrasive polishing pad for mechanical and chemical-mechanical planarization
US7255630B2 (en) Methods of manufacturing carrier heads for polishing micro-device workpieces
US5738567A (en) Polishing pad for chemical-mechanical planarization of a semiconductor wafer
US6520834B1 (en) Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates
EP0790100A1 (en) Apparatus for and method of polishing workpiece
US5611943A (en) Method and apparatus for conditioning of chemical-mechanical polishing pads
US6517414B1 (en) Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
US6010395A (en) Chemical-mechanical polishing apparatus
US5801066A (en) Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers
US6592438B2 (en) CMP platen with patterned surface
EP1935566B1 (en) Substrate holding apparatus
JP4489903B2 (en) Improved cmp platen comprising a pattern surface
EP0907460B1 (en) Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers
US6913523B2 (en) Method for controlling pH during planarization and cleaning of microelectronic substrates
US6206759B1 (en) Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines
US6241585B1 (en) Apparatus and method for chemical mechanical polishing
US6843711B1 (en) Chemical mechanical polishing pad having a process-dependent groove configuration
US20170355140A1 (en) Printing a chemical mechanical polishing pad

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION