US20040200368A1 - Mold structures, and method of transfer of fine structures - Google Patents

Mold structures, and method of transfer of fine structures Download PDF

Info

Publication number
US20040200368A1
US20040200368A1 US10/802,816 US80281604A US2004200368A1 US 20040200368 A1 US20040200368 A1 US 20040200368A1 US 80281604 A US80281604 A US 80281604A US 2004200368 A1 US2004200368 A1 US 2004200368A1
Authority
US
United States
Prior art keywords
mold
substrate
pattern
concave
nanoprint
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/802,816
Inventor
Masahiko Ogino
Akihiro Miyauchi
Sigehisa Motowaki
Kosuke Kuwabara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2003-78460 priority Critical
Priority to JP2003078460A priority patent/JP4340086B2/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Assigned to HITACHI, LTD. reassignment HITACHI, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KUWABARA, KOSUKE, MOTOWAKI, SIGEHISA, MIYAUCHI, AKIHIRO, OGINO, MASAHIKO
Publication of US20040200368A1 publication Critical patent/US20040200368A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/0046Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting

Abstract

A mold and a pattern transfer method using the same for a nanoprinting technology. The mold can be released from a substrate accurately and easily. The mold, which is used for forming a fine pattern on a substrate using a press machine, comprises a release mechanism.

Description

    BACKGROUND OF THE INVENTION
  • 1. Technical Field [0001]
  • The present invention relates to a nanoprint transfer method for forming a fine structure on a substrate using a mold comprising a heating and a pressure-applying mechanism. [0002]
  • 2. Background Art [0003]
  • In recent years, the semiconductor integrated circuits are becoming increasingly finer and more integrated. To cope with such size reductions and increased levels of integration, the accuracy of the photolithography equipment as a pattern transfer technology has been continuously improved. However, the processing method now involves a scale close to that of the wavelength of the photolithographic light source, and the lithography technology is close to its limit. As a result, in order to allow for further reductions in size and achieve higher accuracy, electron beam lithography equipment, which is a type of charged-particle beam equipment, has come to be used more often than photolithography technology. [0004]
  • When patterns are formed using an electron beam, in contrast to the one-shot exposure method whereby an i-line or excimer laser light source is used for forming patterns, a mask pattern is drawn. Accordingly, the electron beam pattern forming method takes more time for exposure (drawing) as the number of patterns to be drawn increases, disadvantageously resulting in increased time for pattern formation. Thus, as the level of integration greatly increases from 256 MB to 1 GB to 4 GB, the time required for pattern formation also increases greatly, possibly resulting in significantly lowered throughput. Thus, in order to reduce time required by the electron beam lithography equipment, development of a one-shot pattern irradiation method is underway whereby masks of various shapes are combined and are irradiated with an electron beam in a single shot, and electron beams of complex shapes are formed. While this allows ever finer patterns to be obtained, it also results in an increase in the size of the electron beam lithography equipment, and it requires a mechanism for controlling mask positions more accurately, thereby increasing equipment cost. [0005]
  • Technologies for carrying out fine pattern formation at low cost are disclosed in U.S. Pat. No. 5,259,926, U.S. Pat. No. 5,772,905 and S. Y. Chou et al., Appl. Phys. Lett., vol. 67, p. 3314 (1995), for example. According to these technologies, a mold having the same concave-convex pattern of as that which is desired to be formed on a substrate is stamped on a resist film layer formed on the surface of the substrate, thereby transferring a predetermined pattern onto the substrate. Particularly, it is described in U.S. Pat. No. 5,772,905 and S. Y. Chou et al., Appl. Phys. Lett., vol. 67, p. 3314 (1995) that the disclosed nanoimprint technique, using a silicon wafer as a mold, can transfer and form fine structures of not more than 25 nanometers. [0006]
  • SUMMARY OF THE INVENTION
  • However, even with the imprint technique that is supposed to be capable of forming a fine pattern, it is difficult to release a mold from the substrate once the mold has been pressed thereon, with high accuracy and without deforming the fine concave-convex pattern formed on the substrate. For example, when a silicon wafer is used as a mold, the mold could be damaged upon its release. [0007]
  • SPIE'S Microlithography, Santa Clara, Calif., Feb. 27-28, 2001 discloses that a release treatment is provided for the mold that is then mechanically released. In this method, however, the problem of damage to the mold upon release has not yet been solved. [0008]
  • In view of the foregoing, it is the object of the present invention to provide a nanoprint method that is a pattern transfer technique for forming fine structures during the manufacture of semiconductor devices, for example, whereby the mold can be easily and accurately released from the substrate. [0009]
  • The present invention is based on the understanding that one of the reasons preventing the efficient release of the mold is that the arrangement of the substrate and mold is too rigid. [0010]
  • In one aspect, the invention provides a mold for forming a fine structure on a substrate using a press machine. The mold, which is for nanoprinting, is provided with a release mechanism, which facilitates the release of the mold from the substrate. [0011]
  • The invention also provides a nanoprint mold for forming a fine structure on a substrate using a press machine, wherein a portion of a periphery portion of said mold on the side where the concave-convex pattern is formed is inclined such that a center portion of the substrate has a large thickness. By increasing the thickness at the center portion of the mold, the substrate, which is warped during the press process, tries to regain its original state during the release step, creating a stress that facilitates the release of the mold from the substrate. Thus, the mold can be easily released from the substrate at a point where the stress is created. [0012]
  • The invention also provides a nanoprint mold for forming a fine structure on a substrate using a press machine, wherein the mold is flexible. Because the mold is flexible, damage to the mold and/or the substrate that can occur if a local stress is applied between the substrate and the mold during the release step can be prevented. [0013]
  • Preferably, the mold is secured to a supporter via an elastomer. By thus securing the mold to the supporter via an elastomer, the force existing between the substrate and the mold can be made more flexible so that damage to the substrate and/or the mold can be effectively prevented. [0014]
  • Preferably, the supporter comprises a rectangular, square, circular, or elliptical frame structure. By adopting such a frame structure, the mold can be secured to the supporter via the elastomer in a minimal manner, and further a better operability can be obtained during the pattern transfer by a nanoprinting method. [0015]
  • The invention also provides a nanoprint mold for forming a fine structure on a substrate using a press machine, wherein said mold is provided with an elastomer at an edge of the side of said mold on which the concave-convex pattern is formed, said elastomer facilitating the release of said mold from said substrate. [0016]
  • The press machine may comprise a heating and pressing mechanism. [0017]
  • In another aspect, the invention provides a pattern transfer method for forming a fine structure on a substrate using a press machine and a nanoprint mold. A release mechanism is provided in the mold. [0018]
  • For example, the invention provides a pattern transfer method for forming a fine structure on a substrate using a press machine and a nanoprint mold, wherein a portion of a periphery portion of said mold on the side where the concave-convex pattern is formed is inclined such that a center portion of the substrate has a large thickness. [0019]
  • The invention also provides a pattern transfer method for forming a fine structure on a substrate using a press machine and a nanoprint mold having a heating and pressing mechanism, wherein the mold is flexible. [0020]
  • Preferably, the mold is secured to a supporter via an elastomer. [0021]
  • Preferably, the supporter comprises a rectangular, square, circular or elliptical frame structure. [0022]
  • A resin substrate or a resin film on a substrate is preferably molded by either: 1) heating and deforming the resin substrate or the resin film on the substrate; 2) pressing and molding the resin substrate or the resin film on the substrate and then optically curing the resin substrate or the resin film; or 3) optically curing the resin substrate or the resin film on the substrate.[0023]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 schematically shows individual steps of a nanoprinting process. [0024]
  • FIG. 2 shows a process of preparing a flexible mold secured to a support frame via an elastomer. [0025]
  • FIG. 3 shows a process of preparing a flexible mold secured to a support frame via an elastomer. [0026]
  • FIG. 4 shows a nanoprinting process utilizing a mold according to the invention. [0027]
  • FIG. 5 shows a process of preparing a curved-surface mold. [0028]
  • FIG. 6 shows a process of preparing a curved-surface mold. [0029]
  • FIG. 7 shows a process of preparing a curved-surface mold. [0030]
  • FIG. 8 shows a convex-surface mold having a deep groove. [0031]
  • FIG. 9 shows a process of molding with the convex-surface mold with deep groove. [0032]
  • FIG. 10 shows a concave-surface mold having a deep groove. [0033]
  • FIG. 11 shows a process of preparing a mold provided with an elastomer at an edge thereof. [0034]
  • FIG. 12 shows a process of preparing a mold provided with an elastomer at an edge thereof. [0035]
  • FIG. 13 shows a process of molding with a light-transmitting, flexible mold that is secured to a support frame via an elastomer. [0036]
  • FIG. 14 schematically shows a biochip. [0037]
  • FIG. 15 is a cross-sectional perspective view of the biochip near where a molecular filter is formed. [0038]
  • FIG. 16 is a cross section of the molecular filter. [0039]
  • FIG. 17 shows the individual steps of a process of preparing a multilayer wiring board. [0040]
  • FIG. 18 is an overall view of a magnetic recording medium, with a portion thereof enlarged and shown in cross section. [0041]
  • FIG. 19 illustrates a method of forming a concave-convex pattern on glass by a nanoprinting method, showing cross-sectional views of the glass taken along the radius thereof. [0042]
  • FIG. 20 schematically shows an optical circuit [0043] 500.
  • FIG. 21 schematically shows the layout of projections in an optical waveguide.[0044]
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Referring to FIG. 1, the nanoprint method will be described. A mold is produced by forming a fine pattern on the surface of a silicon substrate, for example. On another substrate, there is provided a resin film (FIG. 1([0045] a)). Using a press machine, not shown, equipped with a heating and pressing mechanism, the mold is pressed on the resin film at temperature exceeding the glass-transition temperature (Tg) of the resin and at a predetermined pressure (FIG. 1(b)). After cooling and hardening (FIG. 1(c)), the mold is released from the substrate, transferring the fine pattern of the mold onto the resin film on the substrate (FIG. 1(d)). Alternatively, instead of the heat-molding step, a photopolymerizing resin may be used, which can be irradiated with light after molding and cured. Further alternatively, a light-transmitting mold made of glass, for example, may be used, such that the resin can be irradiated with light shone from above the light-transmitting mold after pressing and cured.
  • The nanoprint method offers various merits. For example: 1) it can transfer extremely fine integrated patterns with high efficiency; 2) it can reduce equipment cost; and 3) it can be used for complex shapes and is capable of forming pillars. [0046]
  • Fields of application of the nanoprint method are many, including: 1) various bio-devices such as DNA chips and immunoassay chips, particularly disposable DNA chips; 2) semiconductor multilayer wiring; 3) printed circuit boards and RF MEMS; 4) optical or magnetic storage; 5) optical devices, such as waveguides, diffraction gratings, microlenses and polarizers, and photonic crystals,; 6) sheets; 7) LCD displays; and 8) FED displays. The present invention can be suitably applied to any of these fields. [0047]
  • The term “nanoprint” herein refers to the transfer of patterns or the like measuring several 100 μm to several nm. [0048]
  • While the press machine used in the present invention is not particularly limited, it is preferable to employ a machine equipped with a heating and pressing mechanism and/or a mechanism for shining light from above the light-transmitting mold, from the viewpoint of efficient pattern transfer. [0049]
  • In the invention, the method of forming the fine pattern on the mold that is to be transferred is not particularly limited. For example, photolithography, electron beam lithography, or other techniques may be employed, depending on the desired processing accuracy. The material for the mold may be any material as long as it has a desired strength and a required level of workability, such as silicon wafer, various metal materials, glass, ceramics and plastics. More specifically, examples include Si, SiC, SiN, polycrystalline Si, glass, Ni, Cr, Cu and combinations thereof. [0050]
  • The material for the substrate used in the present invention is not particularly limited, the only requirement being that it has a required strength. Examples include silicon, various metal materials, glass, ceramics and plastics. [0051]
  • The resin film onto which the fine structure is transferred in the invention is not particularly limited and may be selected from a variety of examples depending on the desired processing accuracy. The examples include thermoplastic resins such as: polyethylene, polypropylene, polyvinyl alcohol, polyvinylidene chloride, polyethylene terephthalate, polyvinyl chloride, polystyrene, ABS resin, AS resin, acrylic resin, polyamide, polyacetal, polybutylene terephthalate, glass-reinforced polyethylene terephthalate, polycarbonate, denatured polyphenylene ether, polyphenylene sulfide, polyetheretherketone, liquid crystal polymer, fluororesin, polyarylate, polysulfone, polyethersulfone, polyamide-imide, polyetherimide and thermoplastic polyimide; and thermosetting resins such as phenol resin, melamine resin, urea resin, epoxy resin, unsaturated polyester resin, alkyd resin, silicone resin, diallyl phthalate resin, polyaminobismaleimide and poly-bis-amide-triazole; and materials in which two or more of the above-mentioned materials are blended. [0052]
  • EXAMPLES Examples of the invention will be hereafter described. Example 1
  • Referring to FIGS. 2 and 3, the method of producing a mold according to an embodiment of the invention will be described, which is flexible and fixed to a support frame via an elastomer. It should be noted that FIGS. 2 and 3 are conceptual diagrams in which pattern shapes are simplified and enlarged. Initially, an Si substrate [0053] 1 measuring 100 mm in length×100 mm in width×0.5 mm in thickness was prepared, as shown in FIG. 2(a). Then, a photoresist 2 (OEBR1000, manufactured by Tokyo Ohka Kogyo Co., Ltd.) for electron beam exposure was applied, using a spin coater, as shown in FIG. 2(b). Thereafter, using a JBX6000FS electron beam lithography apparatus (manufactured by Nippon Denshi), a pattern was directly drawn on the photoresist by an electron beam 3, as shown in FIG. 2(c), thus exposing the resist. The photoresist was then developed to obtain convex and concave portions formed on the substrate, as shown in FIG. 2(d). The remaining resist had circular patterns, each with a diameter of 100 nm, arranged in a matrix at a 150 nm pitch. Alternatively, if the pattern is on the order of several 100 nm or more, a Kr laser (wavelength 351 nm) may be used instead of electron beam. Using the concave and convex portions shown in FIG. 2(d) as a mask pattern, the Si substrate 1 was dry-etched such that concave and convex portions were formed in the Si substrate 1 as shown in FIG. 2(e). The resist 2 was then removed by O2 ashing, thereby obtaining a master made of silicon on one surface of which columnar projections with diameters of 100 nm were formed. On the surface of this master was then deposited Ni to a thickness of several 10 nm by sputtering, as shown in FIG. 2(f). This was followed by the formation of an Ni-plated layer to a thickness of 100 μm, as shown in FIG. 2(g). The steps (f) and (g) may alternatively employ electroless plating. Finally, the Si master was released to obtain an Ni mold in which openings with 100 nm diameters were formed in a matrix. This Ni mold was thin and flexible. Because the convex-concave pattern on the Ni mold is reversed from that of the silicon master, the master must be made with a reversed pattern in advance. Alternatively, instead of making the mold directly from the silicon master, the silicon master pattern may be transferred to a sub-master and then an Ni mold may be made from the sub-master.
  • FIG. 3([0054] a) is a perspective view of an Ni mold 6 formed by the above-described method. A elastomer 7 made of silicone rubber with a hollow center and a thickness of 1 mm was affixed to the back surface of the mold 6, using a silicone adhesive (KE1820, manufactured by Shin-Etsu Silicones), as shown in FIG. 3(b). Further, a supporter 8 made of a SUS frame was affixed, as shown in FIG. 3(c), thereby obtaining the mold according to the invention. The elastomer 7 and supporter 8 may be formed in various shapes in accordance with the shape of the mold, such as square, rectangular, circular or elliptical shapes.
  • Now referring to FIG. 4, the nanostamping process using the mold of the invention will be described. FIG. 4([0055] a) shows the mold, which is bonded to the SUS frame via resilient material, having been set on an Si substrate on which a 10 weight-percent diethylene glycol monoethyl ether acetate solution of polystylene 679 (manufactured by A & M Styrene Co., Ltd.) was spin-coated. The pressure is then reduced to 0.1 Torr or less, and the mold is heated to 250° C. and maintained under the pressure of 12 MPa, as shown in FIG. 4(b) for 10 minutes, thus deforming the polystylene. Thereafter, the mold was allowed to stand to cool to temperature of less than 100° C., and then exposed to the atmosphere. This was followed by a releasing step which, if the conventional releasing method had been utilized, would have required a large force to release the mold from the substrate because of the mesh between the mold and substrate via nanoscale irregularities, and would have likely damaged the mold. In accordance with the invention, a hook was attached to one end of the support frame, as shown in FIG. 4(c), and the support frame was raised using the hook. As a result, the elastomer extended in a direction along its thickness, as shown in FIG. 4(d), thereby exerting a force on the Ni portion to release it from the resin. Because of the release-start point provided at the edge of the mold, the releasing process proceeded smoothly, as shown in FIG. 4(e). The support frame tended to break off or become damaged upon application of force in the releasing direction in the absence of the resilient material and with the Ni portion directly fixed to the support frame. However, in accordance with the mold structure of the invention, the mold can be released without being damaged because of the provision of the elastomer.
  • Example 2
  • Referring to FIGS. [0056] 5 to 7, a method of producing a curved mold according to another embodiment of the invention will be described.
  • The Ni mold (6 inches, 100 μm in thickness) produced by the above-described process was bonded to an SUS (6 inches, with a thickness of 1 cm at the center and 7 mm at the edges) using a silicone adhesive (KE1820, manufactured by Shin-Etsu Silicones), and a pressure was exerted thereon (FIG. 5([0057] a)), thereby obtaining a convex mold (FIG. 5(b)). It is possible to form a concave mold in a similar manner (FIG. 6).
  • Alternatively, it is possible to make a curved mold by performing Au 20-nm sputtering on a concave mold, conducting Ni electroplating until the center portion has a thickness of approximately 1 cm, and then releasing the deposited mold from the concave mold. Further, it is also possible to produce a concave mold by providing Ni plating on a convex mold in a similar manner. [0058]
  • Hereafter, the stamping process using a convex mold will be described by referring to FIG. 7. A 10% diethylene glycol monoethyl ether acetate solution of a 500-nm thickness polystylene 679 (manufactured by A & M Styrene Co., Ltd.) was applied to a 5-inch φ Si substrate with a 0.5-mm thickness. A 4-inch φ buffer material with a 3 mm thickness was placed beneath, as shown in FIG. 7([0059] a). The pressure was reduced to 0.1 Torr or less, and the mold was heated to 250° C. and pressed at 12 MPa for 10 minutes. The mold was then allowed to stand to cool to temperatures 100° C. or less, when it was exposed to the atmosphere (FIG. 7(b)). When the sample was taken out and the buffer material was removed, the warped substrate tended to regain its original shape and, as a result, the edge portions were easily released. When the edge portions were fixed by a jig and the mold was lifted up vertically at the rate of 0.1 mm/s (FIG. 7(c)). The mold was easily released.
  • Example 3
  • A method of producing a mold with a curved surface in which a deep groove is formed according to another embodiment of the invention will be described by referring to FIGS. [0060] 8 to 10.
  • A cross-shaped pattern with a width of 10 μm and a depth of 3 μm was formed in advance at the center of a Ni mold (6 inches, 100 μm in thickness). The mold was then bonded to an SUS (6 inches, with a thickness of 1 cm at the center and 7 mm at the edges), with a silicone adhesive (KE1820, manufactured by Shin-Etsu Silicones), thereby obtaining a deep-grooved convex mold (FIG. 8). [0061]
  • A stamping process was carried out using the above-described convex-curved mold with the deep groove. A 10% diethylene glycol monoethyl ether acetate solution of polystyrene 679 (manufactured by A & M Styrene Co., Ltd.) was applied to a 5-inch φ Si substrate with a thickness of 0.5 mm, to a thickness of 500 nm. A 4-inch φ buffer material of a thickness of 3 mm was then placed underneath. The base of the press machine had been formed to have a concave-curved surface in advance (FIG. 9([0062] a)). The pressure was then reduced to 0.1 Torr or less, and the mold was heated to 250° C. and then pressed at 12 MPa for 10 minutes. As a result, the substrate was smoothly bent in conformity with the curvature of the base (FIG. 9(b)). The mold was then allowed to stand to cool to temperature of 100° C. or less when it was exposed to the atmosphere. The sample was then put out and the buffer material was removed. As the warped substrate tended to regain its original shape, the edge portions of the substrate were released by themselves. Further, air was introduced to the deep groove at the center of the substrate where another release-start point was provided. With the edge portions of the substrate secured by a jig, the mold was lifted vertically at the rate of 0.1 mm/s (FIG. 9(c)). The mold was easily released.
  • Similar effects were obtained with a concave-curved mold with a deep groove as shown in FIG. 10. [0063]
  • Example 4
  • A method of producing a mold with elastic edges according to another embodiment of the invention will be described by referring to FIGS. 11 and 12. [0064]
  • A stepped Ni mold (4-inch φ, with a 1-cm band portion at the periphery measuring 1 mm in thickness, a pattern-formed portion measuring 5 mm in thickness, and a pattern measuring 300 nm in depth) was affixed to an SUS frame (6-inch φ; 1 mm in thickness), using a silicone adhesive (KE1820, Shin-Etsu Silicones). A silicone rubber member (6 mm square in cross section) was affixed to the periphery of the mold using the aforementioned adhesive. [0065]
  • A 10% diethylene glycol monoethyl ether acetate solution of polystyrene 679 (manufactured by A & M Styrenes) was applied to a 5-inch +Si substrate with a 0.5 mm thickness to a thickness of 500 nm (FIG. 11([0066] a)). The pressure was then reduced to 0.1 Torr or less, and the mold was heated to 250° C. and pressed at 12 MPa for 10 minutes, thus compressing the silicone rubber. The mold was then allowed to stand to cool, and exposed to the atmosphere at 100° C. or less (FIG. 11(b)). When the molding pressure was removed, the compressed silicone rubber, in an attempt to regain its original shape, exerted a force in a releasing direction such that a release-start point existed at the edge of the mold. With the Si substrate vacuum-sucked, the mold was lifted vertically at the rate of 0.1 mm/s (FIG. 11(c)). The mold was easily released.
  • Similar effects were obtained when an elastomer was affixed to a Ni mold provided with a tapered edge, as shown in FIG. 12. [0067]
  • Example 5
  • Referring to FIG. 13, a molding process using a flexible, light-transmitting mold secured to a support frame via an elastomer according to another embodiment of the invention will be described. [0068]
  • A silicone rubber member as an elastomer with a hollow center and with a thickness of 1 mm was affixed to a quartz mold (VIOSIL: manufactured by Shin-Etsu Chemical Co., Ltd., 5-inch φ and 6.35 mm in thickness) using a silicone adhesive (KE1820, manufactured by Shin-Etsu Silicones). An SUS frame was further affixed as a supporter. A photosetting resin (SCR701, manufactured by JSR) was spin-coated on a quartz substrate (VIOSIL: Shin-Etsu Chemical Co., Ltd., 5-inch φ and 6.35 mm in thickness), to a thickness of 500 nm (FIG. 13([0069] a)). Then, the pressure was reduced to 0.1 Torr or less, and the mold was pressed at 0.5 MPa for 10 minutes without heating (FIG. 13(b)). Then, the resin was irradiated with a UV light at 100 mJ/cm2 (FIG. 13(c)). After the mold was exposed to the atmosphere, a hook was attached to the SUS frame and the frame was lifted using the hook. The elastomer extended, and a stress was concentrated at the edge of the mold, which became a release-start point allowing a smooth release of the mold (FIG. 13(d)).
  • Examples of the Application of the Invention
  • Hereafter, several fields to which the nanoprinting technique using the mold with a release-mechanism according to the invention can be suitably applied will be described. [0070]
  • Example 6 Bio(Immuno)Chip)
  • FIG. 14 schematically shows a biochip [0071] 900. In a substrate 901 made of glass is formed a flow passage 902 with a depth of 3 μm and a width of 20 μm. A specimen containing DNA (deoxyribonucleic acid), blood, protein and the like is introduced via an inlet 903 and is caused to flow in the flow passage 902 until it reaches an outlet 904. A molecular filter 905 is disposed in the flow passage 902. In the molecular filter 905, there is formed a projection assembly 100 measuring 250 to 300 nm in diameter and 3 μm in height.
  • FIG. 15 is a cross-sectional perspective view of the biochip [0072] 905 near where the molecular filter 905 is formed. The projection assembly 100 is formed in a part of the flow passage 902 formed on the substrate 901. The substrate 901 is covered with an upper substrate 1001 so that the specimen flows inside the flow passage 902. In the case of a DNA chain-length analysis, while a specimen containing DNA is electrophoresed in the flow passage 902, DNA is separated by the molecular filter 905 depending on the chain length of the DNA with high resolution. The specimen that has passed through the molecular filter 905 is irradiated with a laser light emitted by a semiconductor laser 906 mounted on the surface of the substrate 901. When the DNA passes, the light incident on a photodetector 907 is reduced by about 4%, so that the chain length of DNA in the specimen can be analyzed based on an output signal from the photodetector 907. The signal detected in the photodetector 907 is fed to a signal processing chip 909 via a signal line 908. To the signal processing chip 909 is connected another signal line 910, which is also connected to an output pad 911 for connection with an external terminal. Power is supplied to individual components via a power supply pad 912 provided on the surface of the substrate 901.
  • FIG. 16 shows a cross section of the molecular filter [0073] 905 which, according to the present embodiment, comprises a substrate 901 with a concave portion, a plurality of projections formed on the concave portion of the substrate 901, and an upper substrate 1001 formed to cover the concave portion. The projections are formed such that their tips are in contact with the upper substrate. The projection assembly 100 is mainly made of an organic material and can therefore be deformed. Thus, the projection assembly 100 is not subject to damage when the upper substrate 1001 is mounted over the flow passage 902. The upper substrate 1001, therefore, can be placed in contact with the projection assembly 100. In this arrangement, highly sensitive analysis can be performed without the specimen being leaked from the gap between the projections and the upper substrate 1001. When a chain-length analysis of DNA was actually conducted, it was learned that while the half-value width of resolution of the base pairs was 10 base pairs in the case of the projection assembly 100 made of glass, it was possible to improved the half-value width of resolution of the base pairs to 3 base pairs in the case of the projection assembly 100 made of an organic material. While the molecular filter in the present embodiment has a structure such that the projections are in contact with the upper substrate, a film made of the same material as that of the projections may be formed on the upper substrate such that the projections are in contact with the film. In this way, better contact can be obtained.
  • While in the present embodiment there is only one flow passage [0074] 902, a plurality of flow passages 902 in which projections of different sizes are disposed may be provided. In this way, different kinds of analysis can be performed simultaneously.
  • While in the present embodiment DNA was examined as specimen, a particular sugar chain, protein or antigen may be analyzed by modifying the surface of the projection assembly [0075] 100 in advance with a molecule that reacts with the sugar chain, protein or antigen. By thus modifying the surface of the projections with an antibody, improvements can be made in the sensitivity of immunoassay.
  • By applying the invention to a biochip, a projection for the analysis of organic materials with nanoscale diameters can be simply formed. Further, by controlling the shapes of the concave and convex portions on the mold surface or the viscosity of the organic material thin film, the position, diameter and/or height of the projection made of organic material can be controlled. Thus, in accordance with the invention, there can be provided a microchip for high-sensitivity analysis. [0076]
  • Example 7 Multilayered Wiring Board
  • FIG. 17 shows the process of making a multilayered wiring board. After a resist [0077] 702 is formed on the surface of a multilayer wiring board 1001 comprising a silicon oxide film 1002 and copper wiring 1003, as shown in FIG. 17(a), a pattern transfer process is carried out using a mold (not shown). Exposed regions 703 on the multilayer wiring board 1001 are then dry-etched using CF4/H2 gas. As a result, the exposed regions 703 on the surface of the multilayer wiring board 1001 are processed in the shape of grooves, as shown in FIG. 17(b). The resist 702 is then resist-etched by RIE to thereby remove the resist at the lower-step portions, so that the exposed regions 703 are enlarged, as shown in FIG. 17(c). Thereafter, the exposed regions 703 are dry-etched until the previously formed grooves reach the copper wiring 1003, thereby obtaining a structure as shown in FIG. 17(d). The resist 702 is then removed to obtain the multilayer wiring board 1001 having a grooved surface, as shown in FIG. 17(e). On the surface of the multilayer wiring board 1001 is then formed a metal film by sputtering (not shown), followed by electroplating, thereby forming a metal-plated film 1004 as shown in FIG. 17(f). The metal-plated film 1004 is then polished until the silicon oxide film 1002 on the multilayer wiring board 1001 is exposed, thus obtaining the multilayer wiring board 1001 with metal wiring formed on the surface thereof, as shown in FIG. 17(g).
  • Another process for making a multilayer wiring board will be hereafter described. Upon dry-etching of the exposed regions [0078] 703 in the state shown in FIG. 17(a), by etching until the copper wiring 1003 inside the multilayer wiring board 1001 is reached, the structure shown in FIG. 17(h) is obtained. The resist 702 is then etched by RIE to remove the resist on the lower-step portions, thereby obtaining the structure shown in FIG. 17(i). Thereafter, a metal film 1005 is formed on the surface of the multilayer wiring board 1001 by sputtering, so that the structure shown in FIG. 170) is obtained. The resist 702 is then lifted and removed, thereby obtaining the structure shown in FIG. 17(k). By conducting electroless plating using the remaining metal film 1005, the multilayer wiring board 1001 can be obtained with the structure shown in FIG. 17(l).
  • By applying the invention to a multilayer wiring board, wires can be formed with high dimensional accuracy. [0079]
  • Example 8 Magnetic Disc
  • FIG. 18 shows an overall view of a magnetic recording medium according to Example 8, with a portion enlarged and shown in cross section. The substrate is made of glass having fine concave and convex portions. On the substrate are formed a seed layer, a base layer, a magnetic layer, and a protective layer. Now referring to FIG. 19, the method of manufacturing a magnetic recording medium according to the present example will be described. FIG. 19 shows a radial cross section of the substrate, illustrating a method of forming concave and convex portions on the glass by a nanoprinting method. First, a glass substrate is prepared. A soda lime glass was used in the present example. The material of the substrate is not particularly limited, with the only requirement being that it can be formed as sheets. Examples include other glass materials such as aluminosilicate glass, and metal materials such as Al. Then, a resin film was formed to a thickness of 200 nm using a spin coater, as shown in FIG. 19([0080] a). The resin was PMMA (polymethyl methacrylate).
  • For the mold, a Si wafer was prepared in which grooves were formed concentrically with the opening at the center of the magnetic recording medium. The grooves measured 88 nm in width and 200 nm in depth, and the pitch between the grooves was 110 nm. The convex and concave portions of the mold, which were very fine, were formed by photolithography using an electron beam. After heating the mold to 250° C. to reduce the viscosity of the resin, as shown in FIG. 19([0081] b), the mold was pressed. When the mold was released at a temperature below the glass-transition point of glass, a reversed concave-convex pattern to the pattern on the mold was obtained, as shown in FIG. 19(c). Thus, using the nanoprinting method, a pattern can be formed that is finer than visible light wavelength and beyond the dimensional limit of exposure by conventional photolithography. Further, by removing the remaining film at the bottom of the resin pattern by dry etching, a pattern as shown in FIG. 19(d) can be formed. By further etching the substrate with hydrofluoric acid using this resin film as a mask, the substrate can be processed as shown in FIG. 19(e). By removing the resin with a remover, grooves with a width of 110 nm and a depth of 150 nm were formed, as shown in FIG. 19(f). Thereafter, a seed layer made of NiP was formed on the glass substrate by electroless plating. In the conventional magnetic discs, the NiP layer is formed to a thickness of 10 μm or more. In the present embodiment, the thickness of the NiP layer was limited to 100 nm in order to reflect the fine concave and convex shapes formed on the glass substrate onto the upper layer. Further, a Cr base layer of 15 nm, a CoCrPt magnetic layer of 14 nm, and a C protective layer of 10 nm were successively formed by a sputtering method generally employed in forming magnetic recording media, thereby preparing the magnetic recording medium according to the present embodiment. In this magnetic recording medium, the magnetic substance was radially isolated by a non-magnetic layer wall with a width of 88 nm. Thus, a higher longitudinal magnetic anisotropy was obtained. While the formation of concentric patterns using a polishing tape (texturing) is known in the art, it can only offer a pattern pitch on the order of microns and is therefore not suitable for high-density recording media. In the magnetic recording medium of the present embodiment, on the other hand, magnetic anisotropy was ensured by forming a fine pattern by the nanoprinting method, and a high-density recording of 400 GB per square inch was achieved. The nanoprinting pattern formation technique is not limited to the circumferential direction, but it can also be used for radially forming a non-magnetic isolating wall. Further, the effect of the present embodiment whereby the magnetic anisotropy is provided is not particularly limited by the materials used in the seed layer, base layer, magnetic layer or protective layer.
  • Example 9 Optical Waveguide
  • Another example will be described in which an optical device with varying directions of propagation of incident light is applied to an optical information processing apparatus. [0082]
  • FIG. 20 schematically shows the structure of an optical circuit [0083] 500 that was prepared. The optical circuit 500 comprised a substrate 501 of aluminum nitride, measuring 30 mm in length, 5 mm in width and 1 mm in thickness. On the substrate 501 were formed ten transmission units 502 each consisting of an InP semiconductor laser and a driver circuit, an optical waveguide 503 and an optical connector 504. The ten semiconductor lasers have different transmission wavelengths varying at 50 nm intervals. The optical circuit 500 is a basic component in optical multiplex communication system devices.
  • FIG. 21 schematically shows the layout of projections [0084] 406 inside the optical waveguide 503. In order to allow for an alignment error between the transmission unit 502 and the optical waveguide 503, the optical waveguide 503 was formed to be wider toward the end that had a width of 20 μm. Thus, the waveguide had a structure such that a signal light was guided into a region with a width of 1 μm by a photonic bandgap. While the projections 406 were arranged at 0.5 μm intervals in the actual device, the projections 406 in FIG. 21 are shown in a simplified manner and fewer of them are shown than actually existed.
  • In the optical circuit [0085] 500, the directions of propagation of light can be varied when ten different wavelengths of signal light are superposed and outputted, so that the width of the circuit can be greatly reduced, to 5 mm in the example. Thus, the size of the optical communication device can be reduced. The projections 406 can be formed by the pressing of a mold, and manufacturing cost can be reduced. While the present example relates to a device in which input light is superposed, it should be obvious that the optical waveguide 503 can be usefully applied to all optical devices for controlling an optical path.
  • By applying the present invention to optical waveguides, the direction of propagation of light can be varied by causing a signal light to propagate in a structure where projections made of an organic material as a principal component are periodically arranged. The projections can be formed by a simple manufacturing technique involving the pressing of a mold, such that an optical device can be manufactured at low cost. [0086]
  • In accordance with the invention, a release mechanism is provided in a nanoprint mold by, in particular, increasing the thickness of a center portion of the mold. By so doing, the substrate is warped during the pressing step and then tries to regain its original state as the mold is released in the release step, creating a stress causing the substrate and mold to separate from each other. Thus, the release of the mold from the substrate is facilitated at a point where the stress exists. Further, in accordance with the invention, a flexible mold is employed such that the damage to the substrate and/or the mold that could result if a local stress is applied between them during the releasing of the mold can be prevented. In accordance with the invention, additionally, a spring mechanism is provided between the mold and the substrate whereby the release of the mold from the substrate is facilitated during the release step. [0087]

Claims (23)

What is claimed is:
1. A nanoprint mold for forming a fine structure on a substrate with the use of a press machine, said mold comprising a release mechanism.
2. The nanoprint mold according to claim 1, wherein said mold is provided with a curved surface on the side thereof on which a concave-convex pattern is formed.
3. The nanoprint mold according to claim 2, wherein a portion of a periphery portion of said mold on the side where the concave-convex pattern is formed is inclined such that a center portion of the substrate has a large thickness.
4. The nanoprint mold according to claim 2, wherein a portion of a periphery portion of said mold on the side on which the concave-convex pattern is formed is inclined such that a center portion of the substrate has a small thickness.
5. The nanoprint mold according to claim 2, wherein the side of said mold on which the concave-convex pattern is formed is provided with a curved surface and is also provided with a deep groove at a portion thereof.
6. The nanoprint mold according to claim 1, wherein said press machine comprises a heating and pressing mechanism.
7. The nanoprint mold according to claim 1, wherein said mold has a light-transmitting property.
8. The nanoprint mold according to claim 1, wherein said mold is flexible.
9. The nanoprint mold according to claim 8, wherein said mold is secured to a supporter via an elastomer.
10. The nanoprint mold according to claim 9, wherein said supporter comprises a rectangular, square, circular or elliptical frame structure.
11. The nanoprint mold according to claim 1, wherein said mold is provided with an elastomer at an edge of the side of said mold on which the concave-convex pattern is formed, said elastomer facilitating the release of said mold from said substrate.
12. A pattern transfer method for forming a fine structure on a substrate with the use of a press machine and a nanoprint mold, wherein said mold comprises a release mechanism.
13. The pattern transfer method according to claim 12, wherein said mold is provided with a curved surface on the side thereof on which a concave-convex pattern is formed.
14. The pattern transfer method according to claim 13, wherein a portion of a periphery portion of said mold on the side where the concave-convex pattern is formed is inclined such that a center portion of the substrate has a large thickness.
15. The pattern transfer method according to claim 13, wherein a portion of a periphery portion of said mold on the side on which the concave-convex pattern is formed is inclined such that a center portion of the substrate has a small thickness.
16. The pattern transfer method according to claim 13, wherein the side of said mold on which the concave-convex pattern is formed is provided with a curved surface and is also provided with a deep groove at a portion thereof.
17. The pattern transfer method according to claim 12, wherein a pattern is transferred by heating and thereby deforming a resin substrate or a resin film on a substrate.
18. The pattern transfer method according to claim 12, wherein a pattern is transferred by pressing and molding a resin substrate or a resin film on a substrate and then photo-curing said resin substrate or resin film.
19. The pattern transfer method according to claim 12, wherein a pattern is transferred by irradiating a resin substrate or a resin film on a substrate with light from above a transparent mold such that said resin substrate or resin film is photo-cured.
20. The pattern transfer method according to claim 12, wherein said mold is flexible.
21. The pattern transfer method according to claim 20, wherein said mold is secured to a supporter via an elastomer.
22. The pattern transfer method according to claim 21, wherein said supporter comprises a rectangular, square, circular or elliptical frame structure.
23. The pattern transfer method according to claim 12, wherein said mold is provided with an elastomer at an edge of the side of said mold on which the concave-convex pattern is formed, said elastomer facilitating the release of said mold from said substrate.
US10/802,816 2003-03-20 2004-03-18 Mold structures, and method of transfer of fine structures Abandoned US20040200368A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003-78460 2003-03-20
JP2003078460A JP4340086B2 (en) 2003-03-20 2003-03-20 Nanoprinting stamper and fine structure transfer method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/526,708 US8632714B2 (en) 2003-03-20 2012-06-19 Mold structures, and method of transfer of fine structures

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/526,708 Division US8632714B2 (en) 2003-03-20 2012-06-19 Mold structures, and method of transfer of fine structures

Publications (1)

Publication Number Publication Date
US20040200368A1 true US20040200368A1 (en) 2004-10-14

Family

ID=33127221

Family Applications (2)

Application Number Title Priority Date Filing Date
US10/802,816 Abandoned US20040200368A1 (en) 2003-03-20 2004-03-18 Mold structures, and method of transfer of fine structures
US13/526,708 Expired - Fee Related US8632714B2 (en) 2003-03-20 2012-06-19 Mold structures, and method of transfer of fine structures

Family Applications After (1)

Application Number Title Priority Date Filing Date
US13/526,708 Expired - Fee Related US8632714B2 (en) 2003-03-20 2012-06-19 Mold structures, and method of transfer of fine structures

Country Status (2)

Country Link
US (2) US20040200368A1 (en)
JP (1) JP4340086B2 (en)

Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060157444A1 (en) * 2004-12-09 2006-07-20 Takashi Nakamura Imprinting machine and device manufacturing method
US20060175285A1 (en) * 2005-02-07 2006-08-10 Fujitsu Limited Method of making magnetic recording medium and die therefor
US20060203366A1 (en) * 2005-03-11 2006-09-14 Fuji Photo Film Co., Ltd. Transfer master, transfer holder, transfer apparatus, and magnetic recording medium
US20060233906A1 (en) * 2005-04-19 2006-10-19 Toshiba Kikai Kabushiki Kaisha Transcript apparatus
US20060243761A1 (en) * 2005-04-28 2006-11-02 Toshiba Kikai Kabushiki Kaisha Transfer apparatus having gimbal mechanism and transfer method using the transfer apparatus
US20060257514A1 (en) * 2005-05-10 2006-11-16 Toshiba Kikai Kabushiki Kaisha Transcript apparatus
US20060269645A1 (en) * 2005-05-25 2006-11-30 Toshiba Kikai Kabushiki Kaisha Transcript apparatus
US20070063384A1 (en) * 2005-09-21 2007-03-22 Molecular Imprints, Inc. Method to control an atmostphere between a body and a substrate
US20070113962A1 (en) * 2005-11-21 2007-05-24 Seung-Hyun Son Method of manufacturing barrier rib structure for flat display panel
SG134178A1 (en) * 2006-01-09 2007-08-29 Agency Science Tech & Res Microstructure formation technique
US20080042319A1 (en) * 2006-07-07 2008-02-21 Takashi Ando Imprint device and microstructure transfer method
US20080174052A1 (en) * 2007-01-19 2008-07-24 Kyu-Young Kim Imprinting apparatus and imprinting method
US20080237931A1 (en) * 2007-03-30 2008-10-02 Kenya Ohashi Mold for Fine Pattern Transfer and Method for Forming Resin Pattern Using Same
US20080248333A1 (en) * 2007-03-30 2008-10-09 Fujifilm Corporation Mold structure, imprinting method using the same, magnetic recording medium and production method thereof
US20080265447A1 (en) * 2007-04-30 2008-10-30 Samsung Electronics Co., Ltd. Method of inprinting patterns and method of manufacturing a display substrate by using the same
US20090032997A1 (en) * 2007-08-02 2009-02-05 Sumitomo Electric Industries, Ltd. Resin pattern formation method
US20090042340A1 (en) * 2005-12-01 2009-02-12 Kabushiki Kaisha Toshiba Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same
US20090057960A1 (en) * 2005-03-30 2009-03-05 Zeon Corporation Resin mold and process for producing a molded article using the mold
US20090243152A1 (en) * 2008-03-28 2009-10-01 Kabushiki Kaisha Toshiba Imprinting method and stamper
US20090243126A1 (en) * 2008-03-31 2009-10-01 Ryuta Washiya Method and apparatus for imprinting microstructure and stamper therefor
FR2935841A1 (en) * 2008-09-05 2010-03-12 Commissariat Energie Atomique Texturization mold forming method for fabricating photovoltaic solar cell, involves eliminating etching mask, forming texturization mold by electrolytic deposition of metal layer on support, and disintegrating support and texturization mold
FR2935842A1 (en) * 2008-09-05 2010-03-12 Commissariat Energie Atomique Textured zone forming method for solar cell substrate, involves forming mask in film by applying pressure using mold, and etching mask and substrate till mask is entirely removed, where mask has patterns complementary to that of substrate
US20100065986A1 (en) * 2005-08-17 2010-03-18 Namiki Seimitsu Houseki Kabushikikaisha Nanoimprint method and apparatus
US20100092727A1 (en) * 2008-08-21 2010-04-15 Fuji Electric Device Technology Co., Ltd. Nanoimprinting mold and magnetic recording media manufactured using same
US20100139862A1 (en) * 2004-12-30 2010-06-10 Asml Netherlands B.V. Imprint lithography
US20100289182A1 (en) * 2007-09-28 2010-11-18 Yuma Hirai method and device for manufacturing sheet having fine shape transferred thereon
US20100330221A1 (en) * 2009-06-26 2010-12-30 Fuji Electric Device Technology Co. Ltd. Imprint stamper and imprint device
US20110171431A1 (en) * 2008-06-30 2011-07-14 Masahiko Ogino Fine structure and stamper for imprinting
US20110223345A1 (en) * 2008-06-26 2011-09-15 Morio Tomiyama Method for manufacturing multilayer information recording medium
CN102744877A (en) * 2011-04-19 2012-10-24 松下电器产业株式会社 Apparatus for manufacturing sheet instrument and method for manufacturing sheet instrument
JP2015198215A (en) * 2014-04-03 2015-11-09 大日本印刷株式会社 Substrate for imprint mold and manufacturing method therefor, and imprint mold
KR20160100255A (en) * 2015-02-13 2016-08-23 캐논 가부시끼가이샤 Mold, imprint apparatus, and method of manufacturing article
CN108028053A (en) * 2015-09-18 2018-05-11 大日本印刷株式会社 Method for manufacturing information recording carrier
USRE47483E1 (en) 2006-05-11 2019-07-02 Molecular Imprints, Inc. Template having a varying thickness to facilitate expelling a gas positioned between a substrate and the template
WO2020163524A1 (en) * 2019-02-05 2020-08-13 Digilens Inc. Methods for compensating for optical surface nonuniformity
US10783917B1 (en) 2016-11-29 2020-09-22 Seagate Technology Llc Recording head with transfer-printed laser diode unit formed of non-self-supporting layers

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7140861B2 (en) * 2004-04-27 2006-11-28 Molecular Imprints, Inc. Compliant hard template for UV imprinting
JP4537863B2 (en) * 2005-02-02 2010-09-08 パナソニック株式会社 Molding method and molding apparatus
JP4679166B2 (en) * 2005-02-04 2011-04-27 株式会社ブリヂストン Circuit pattern forming method and circuit board
JP4914012B2 (en) * 2005-02-14 2012-04-11 キヤノン株式会社 Manufacturing method of structure
JP4773729B2 (en) * 2005-02-28 2011-09-14 キヤノン株式会社 Transfer apparatus and device manufacturing method
JP4787993B2 (en) * 2005-04-22 2011-10-05 株式会社日立製作所 Imprint transfer printing method and transfer printing plate
JP4781003B2 (en) * 2005-04-28 2011-09-28 信越石英株式会社 Silica-titania glass for nanoimprint stamper
JP2007027361A (en) * 2005-07-15 2007-02-01 Toppan Printing Co Ltd Mold for imprint
JP5119579B2 (en) * 2005-08-01 2013-01-16 凸版印刷株式会社 Imprint mold and manufacturing method thereof
JP4905634B2 (en) * 2005-08-11 2012-03-28 株式会社カネカ Manufacturing method of nanoimprint mold
JP5000112B2 (en) * 2005-09-09 2012-08-15 東京応化工業株式会社 Pattern formation method by nanoimprint lithography
JP4753672B2 (en) * 2005-09-16 2011-08-24 株式会社クラレ Manufacturing method of resin microchannel array and blood measurement method using the same
JP5266615B2 (en) * 2006-01-18 2013-08-21 Tdk株式会社 Stamper, uneven pattern forming method, and information recording medium manufacturing method
JP4735280B2 (en) 2006-01-18 2011-07-27 株式会社日立製作所 Pattern formation method
JP4951981B2 (en) * 2006-01-23 2012-06-13 凸版印刷株式会社 Imprint mold and manufacturing method thereof
JP2007210275A (en) * 2006-02-13 2007-08-23 Toppan Printing Co Ltd Mold for imprint
WO2007105474A1 (en) * 2006-03-10 2007-09-20 Pioneer Corporation Imprinting method and imprinting apparatus
US7862756B2 (en) 2006-03-30 2011-01-04 Asml Netherland B.V. Imprint lithography
JP4830171B2 (en) * 2006-05-15 2011-12-07 学校法人早稲田大学 Mold support structure
US7998651B2 (en) * 2006-05-15 2011-08-16 Asml Netherlands B.V. Imprint lithography
JP2008000945A (en) * 2006-06-21 2008-01-10 Toshiba Mach Co Ltd Mold for transcription
JP4915561B2 (en) * 2006-08-11 2012-04-11 株式会社サカイヤ Method for forming a spin pattern on a plastic sheet
KR101400811B1 (en) 2006-09-27 2014-05-29 도레이 카부시키가이샤 Intermittent film forming system and intermittent film forming method
JP2008119870A (en) * 2006-11-09 2008-05-29 Toppan Printing Co Ltd Imprinting mold
JP5046369B2 (en) * 2006-11-17 2012-10-10 株式会社日本製鋼所 Manufacturing method of stamper having micro / nano microstructure
JP5062521B2 (en) * 2007-02-27 2012-10-31 独立行政法人理化学研究所 Method for manufacturing replica mold and replica mold
JP4944640B2 (en) * 2007-03-02 2012-06-06 積水化学工業株式会社 Manufacturing method of microstructured mold
TW200902332A (en) * 2007-03-26 2009-01-16 Hitachi Maxell Imprinting jig and imprinting apparatus
EP1975704A3 (en) 2007-03-30 2008-12-10 Fujifilm Corporation Mold structure, imprinting method using the same, magnetic recording medium and production method thereof
JP5422954B2 (en) * 2007-09-28 2014-02-19 東レ株式会社 Manufacturing method and manufacturing apparatus of fine shape transfer sheet
JP5002422B2 (en) * 2007-11-14 2012-08-15 株式会社日立ハイテクノロジーズ Resin stamper for nanoprint
JP5347617B2 (en) * 2008-03-31 2013-11-20 東レ株式会社 Manufacturing method and manufacturing apparatus of fine shape transfer sheet
WO2009145006A1 (en) * 2008-05-26 2009-12-03 独立行政法人産業技術総合研究所 Imprinting method and device utilizing ultrasonic vibrations
JP5011222B2 (en) * 2008-06-30 2012-08-29 株式会社日立製作所 Imprint stamper and imprint method
JP5349854B2 (en) * 2008-06-30 2013-11-20 株式会社日立製作所 Fine structure and manufacturing method thereof
JP5383110B2 (en) * 2008-07-25 2014-01-08 株式会社東芝 Imprint device
JP5117318B2 (en) * 2008-08-07 2013-01-16 株式会社日立ハイテクノロジーズ Nanoimprinting stamper and fine structure transfer apparatus using the stamper
JP4609562B2 (en) * 2008-09-10 2011-01-12 日立電線株式会社 Stamper for fine structure transfer and manufacturing method thereof
JP2010093105A (en) * 2008-10-09 2010-04-22 Toshiba Mach Co Ltd Molded product holding apparatus, mold holding apparatus and transfer apparatus
JP4798468B2 (en) * 2009-01-30 2011-10-19 ソニー株式会社 Lens manufacturing apparatus and lens manufacturing method
JP5299067B2 (en) * 2009-05-08 2013-09-25 ソニー株式会社 Mold stamper manufacturing method, mold stamper and molded product manufacturing method
JP2012064295A (en) * 2009-11-10 2012-03-29 Showa Denko Kk Method for manufacturing glass substrate for magnetic recording medium
JP5534311B2 (en) * 2010-01-22 2014-06-25 Hoya株式会社 Mask blank substrate and manufacturing method thereof, mask blank for imprint mold and manufacturing method thereof, and imprint mold and manufacturing method thereof
JP5469041B2 (en) * 2010-03-08 2014-04-09 株式会社日立ハイテクノロジーズ Fine structure transfer method and apparatus
US9161448B2 (en) 2010-03-29 2015-10-13 Semprius, Inc. Laser assisted transfer welding process
JP5978552B2 (en) * 2010-06-24 2016-08-24 大日本印刷株式会社 Nanoimprint mold and pattern forming method
JP5624829B2 (en) * 2010-08-17 2014-11-12 昭和電工株式会社 Method for manufacturing glass substrate for magnetic recording medium
JP4774125B2 (en) * 2010-10-04 2011-09-14 キヤノン株式会社 Transfer apparatus, mold, and device manufacturing method
JP2012089221A (en) * 2010-10-22 2012-05-10 Showa Denko Kk Method for manufacturing glass substrate for magnetic recording medium
JP5782784B2 (en) * 2011-03-31 2015-09-24 大日本印刷株式会社 Imprint method and imprint apparatus for implementing the method
TWI436405B (en) * 2011-06-23 2014-05-01 Asahi Kasei E Materials Corp And a method for producing a layered product for forming a fine pattern and a fine pattern forming layer
US9412727B2 (en) 2011-09-20 2016-08-09 Semprius, Inc. Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion
JP5982263B2 (en) * 2012-11-14 2016-08-31 東芝機械株式会社 Mold holding jig
CN103058129B (en) * 2013-01-06 2015-07-01 中国科学院上海微系统与信息技术研究所 Method for preparing semiconductor sub-micron band on flexible substrate, and flexible optical waveguide
KR20150109388A (en) * 2013-01-22 2015-10-01 피에스5 뤽스코 에스.에이.알.엘. Method for manufacturing semiconductor device
JP6300466B2 (en) * 2013-08-12 2018-03-28 Hoya株式会社 Mask blank substrate, mask blank, imprint mold, and manufacturing method thereof
JP5790798B2 (en) * 2014-01-21 2015-10-07 大日本印刷株式会社 Imprint mold and pattern forming method using the mold
US9981408B2 (en) * 2014-03-12 2018-05-29 City University Of Hong Kong Fabrication and replication of polymer optical waveguides
JP2014179630A (en) * 2014-04-16 2014-09-25 Hoya Corp Method of manufacturing imprint mold
JP6361964B2 (en) * 2014-06-26 2018-07-25 大日本印刷株式会社 Device manufacturing equipment
US20160020127A1 (en) 2014-07-20 2016-01-21 X-Celeprint Limited Apparatus and methods for micro-transfer-printing
JP5867578B2 (en) * 2014-12-22 2016-02-24 大日本印刷株式会社 Imprint mold composite and manufacturing method thereof
JP6036865B2 (en) * 2015-02-05 2016-11-30 大日本印刷株式会社 Imprint mold
US9704821B2 (en) 2015-08-11 2017-07-11 X-Celeprint Limited Stamp with structured posts
US10468363B2 (en) 2015-08-10 2019-11-05 X-Celeprint Limited Chiplets with connection posts
US10103069B2 (en) 2016-04-01 2018-10-16 X-Celeprint Limited Pressure-activated electrical interconnection by micro-transfer printing
US10222698B2 (en) 2016-07-28 2019-03-05 X-Celeprint Limited Chiplets with wicking posts
US20200073234A1 (en) * 2016-12-09 2020-03-05 James J. Watkins Master mold for pattern transfer
CN108340467B (en) * 2018-04-08 2020-05-12 安徽省舒城华竹实业有限公司 Pin demoulding device is retreated in bamboo wood integrated material press forming
US10796971B2 (en) 2018-08-13 2020-10-06 X Display Company Technology Limited Pressure-activated electrical interconnection with additive repair
US10748793B1 (en) 2019-02-13 2020-08-18 X Display Company Technology Limited Printing component arrays with different orientations

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1236304A (en) * 1917-02-03 1917-08-07 Riley L Howell Cushioned hand-stamp.
US1273131A (en) * 1918-04-23 1918-07-23 Arthur M Barrett Copying device.
US2201302A (en) * 1938-11-30 1940-05-21 Westinghouse Electric & Mfg Co Printing device
JPH02305612A (en) * 1989-03-13 1990-12-19 Nippon Sheet Glass Co Ltd Manufacture of board with fine pattern
US5817242A (en) * 1995-08-04 1998-10-06 International Business Machines Corporation Stamp for a lithographic process
US5843321A (en) * 1993-04-19 1998-12-01 Olympus Optical Company, Ltd. Method of manufacturing optical element
US6048623A (en) * 1996-12-18 2000-04-11 Kimberly-Clark Worldwide, Inc. Method of contact printing on gold coated films
US20020094496A1 (en) * 2000-07-17 2002-07-18 Choi Byung J. Method and system of automatic fluid dispensing for imprint lithography processes
US20020132482A1 (en) * 2000-07-18 2002-09-19 Chou Stephen Y. Fluid pressure imprint lithography
US20040009673A1 (en) * 2002-07-11 2004-01-15 Sreenivasan Sidlgata V. Method and system for imprint lithography using an electric field

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7904113A (en) * 1979-05-25 1980-11-27 Philips Nv Optically readable information disc, method for manufacturing it, and apparatus for performing this method
JPS57163536A (en) * 1981-04-02 1982-10-07 Toppan Printing Co Ltd Preparation of information recording carrier
DE3719200A1 (en) * 1987-06-09 1988-12-29 Ibm Deutschland OPTICAL DISK AND METHOD FOR THEIR PRODUCTION
JPH02113456A (en) * 1988-10-20 1990-04-25 Mitsubishi Electric Corp Disk substrate manufacturing device
JPH02289311A (en) 1989-01-25 1990-11-29 Hoya Corp Manufacture of stamper and board for information recording medium for which stamper is used
JP3456290B2 (en) 1995-01-31 2003-10-14 オムロン株式会社 Optical element manufacturing method and optical element manufacturing apparatus
GB9601289D0 (en) * 1996-01-23 1996-03-27 Nimbus Manufacturing Uk Limite Manufacture of optical data storage disc
JP2000194142A (en) 1998-12-25 2000-07-14 Fujitsu Ltd Pattern forming method and production of semiconductor device
JP2002289560A (en) 2001-03-23 2002-10-04 Nippon Telegr & Teleph Corp <Ntt> In-print method and in-print device
KR100981692B1 (en) * 2002-05-27 2010-09-13 코닌클리케 필립스 일렉트로닉스 엔.브이. Method and device for transferring a pattern from a stamp to a substrate
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US8215946B2 (en) * 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US6980282B2 (en) * 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
AU2003300865A1 (en) * 2002-12-13 2004-07-09 Molecular Imprints, Inc. Magnification corrections employing out-of-plane distortions on a substrate
US7635263B2 (en) * 2005-01-31 2009-12-22 Molecular Imprints, Inc. Chucking system comprising an array of fluid chambers
JP4609562B2 (en) * 2008-09-10 2011-01-12 日立電線株式会社 Stamper for fine structure transfer and manufacturing method thereof

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1236304A (en) * 1917-02-03 1917-08-07 Riley L Howell Cushioned hand-stamp.
US1273131A (en) * 1918-04-23 1918-07-23 Arthur M Barrett Copying device.
US2201302A (en) * 1938-11-30 1940-05-21 Westinghouse Electric & Mfg Co Printing device
JPH02305612A (en) * 1989-03-13 1990-12-19 Nippon Sheet Glass Co Ltd Manufacture of board with fine pattern
US5843321A (en) * 1993-04-19 1998-12-01 Olympus Optical Company, Ltd. Method of manufacturing optical element
US5817242A (en) * 1995-08-04 1998-10-06 International Business Machines Corporation Stamp for a lithographic process
US6048623A (en) * 1996-12-18 2000-04-11 Kimberly-Clark Worldwide, Inc. Method of contact printing on gold coated films
US20020094496A1 (en) * 2000-07-17 2002-07-18 Choi Byung J. Method and system of automatic fluid dispensing for imprint lithography processes
US20020132482A1 (en) * 2000-07-18 2002-09-19 Chou Stephen Y. Fluid pressure imprint lithography
US20040009673A1 (en) * 2002-07-11 2004-01-15 Sreenivasan Sidlgata V. Method and system for imprint lithography using an electric field

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Translated abstract of JP 2002-289560 *

Cited By (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7815424B2 (en) 2004-12-09 2010-10-19 Canon Kabushiki Kaisha Imprinting machine and device manufacturing method
US8834144B2 (en) 2004-12-09 2014-09-16 Canon Kabushiki Kaisha Imprinting machine and device manufacturing method
US20060157444A1 (en) * 2004-12-09 2006-07-20 Takashi Nakamura Imprinting machine and device manufacturing method
US20100148397A1 (en) * 2004-12-09 2010-06-17 Canon Kabushiki Kaisha Imprinting machine and device manufacturing method
US20100139862A1 (en) * 2004-12-30 2010-06-10 Asml Netherlands B.V. Imprint lithography
US9341944B2 (en) 2004-12-30 2016-05-17 Asml Netherlands B.V. Imprint lithography
US7459096B2 (en) * 2005-02-07 2008-12-02 Fujitsu Limited Method of making magnetic recording medium and die therefor
US20060175285A1 (en) * 2005-02-07 2006-08-10 Fujitsu Limited Method of making magnetic recording medium and die therefor
US20060203366A1 (en) * 2005-03-11 2006-09-14 Fuji Photo Film Co., Ltd. Transfer master, transfer holder, transfer apparatus, and magnetic recording medium
US20090057960A1 (en) * 2005-03-30 2009-03-05 Zeon Corporation Resin mold and process for producing a molded article using the mold
US20060233906A1 (en) * 2005-04-19 2006-10-19 Toshiba Kikai Kabushiki Kaisha Transcript apparatus
US7448865B2 (en) 2005-04-19 2008-11-11 Toshiba Kikai Kabushiki Kaisha Transcript apparatus
US8318074B2 (en) 2005-04-28 2012-11-27 Toshiba Kikai Kabushiki Kaisha Transfer apparatus having gimbal mechanism and transfer method using the transfer apparatus
US7648354B2 (en) 2005-04-28 2010-01-19 Toshiba Kikai Kabushiki Kaisha Transfer apparatus having gimbal mechanism and transfer method using the transfer apparatus
US20100086629A1 (en) * 2005-04-28 2010-04-08 Toshiba Kikai Kabushiki Kaisha Transfer apparatus having gimbal mechanism and transfer method using the transfer apparatus
US20060243761A1 (en) * 2005-04-28 2006-11-02 Toshiba Kikai Kabushiki Kaisha Transfer apparatus having gimbal mechanism and transfer method using the transfer apparatus
US20060257514A1 (en) * 2005-05-10 2006-11-16 Toshiba Kikai Kabushiki Kaisha Transcript apparatus
US7465162B2 (en) 2005-05-10 2008-12-16 Toshiba Kikai Kabushiki Kaisha Transcript apparatus
US20060269645A1 (en) * 2005-05-25 2006-11-30 Toshiba Kikai Kabushiki Kaisha Transcript apparatus
US7448862B2 (en) 2005-05-25 2008-11-11 Toshiba Kikai Kabushiki Kaisha Transcript apparatus
US20100065986A1 (en) * 2005-08-17 2010-03-18 Namiki Seimitsu Houseki Kabushikikaisha Nanoimprint method and apparatus
US8029717B2 (en) 2005-08-17 2011-10-04 Namiki Seimitsu Houseki Kabushiki Kaisha Nanoimprint method and apparatus
US7670534B2 (en) * 2005-09-21 2010-03-02 Molecular Imprints, Inc. Method to control an atmosphere between a body and a substrate
US20070063384A1 (en) * 2005-09-21 2007-03-22 Molecular Imprints, Inc. Method to control an atmostphere between a body and a substrate
US20070113962A1 (en) * 2005-11-21 2007-05-24 Seung-Hyun Son Method of manufacturing barrier rib structure for flat display panel
US20090042340A1 (en) * 2005-12-01 2009-02-12 Kabushiki Kaisha Toshiba Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same
US7842557B2 (en) 2005-12-01 2010-11-30 Kabushiki Kaisha Toshiba Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same
SG134178A1 (en) * 2006-01-09 2007-08-29 Agency Science Tech & Res Microstructure formation technique
USRE47483E1 (en) 2006-05-11 2019-07-02 Molecular Imprints, Inc. Template having a varying thickness to facilitate expelling a gas positioned between a substrate and the template
US20080042319A1 (en) * 2006-07-07 2008-02-21 Takashi Ando Imprint device and microstructure transfer method
US8109751B2 (en) * 2006-07-07 2012-02-07 Hitachi High-Technologies Corporation Imprint device and microstructure transfer method
US7833464B2 (en) * 2007-01-19 2010-11-16 Samsung Electronics Co., Ltd. Imprinting apparatus and imprinting method
US20080174052A1 (en) * 2007-01-19 2008-07-24 Kyu-Young Kim Imprinting apparatus and imprinting method
US20080248333A1 (en) * 2007-03-30 2008-10-09 Fujifilm Corporation Mold structure, imprinting method using the same, magnetic recording medium and production method thereof
US20080237931A1 (en) * 2007-03-30 2008-10-02 Kenya Ohashi Mold for Fine Pattern Transfer and Method for Forming Resin Pattern Using Same
EP1975703A3 (en) * 2007-03-30 2008-12-03 Fujifilm Corporation Mold structure, imprinting method using the same, magnetic recording medium and production method thereof
US8158048B2 (en) * 2007-03-30 2012-04-17 Hitachi Industrial Equipment Systems Co., Ltd. Mold for fine pattern transfer and method for forming resin pattern using same
US20080265447A1 (en) * 2007-04-30 2008-10-30 Samsung Electronics Co., Ltd. Method of inprinting patterns and method of manufacturing a display substrate by using the same
US20090032997A1 (en) * 2007-08-02 2009-02-05 Sumitomo Electric Industries, Ltd. Resin pattern formation method
EP2210732A4 (en) * 2007-09-28 2017-07-26 Toray Industries, Inc. Method and device for manufacturing sheet having fine shape transferred thereon
US20100289182A1 (en) * 2007-09-28 2010-11-18 Yuma Hirai method and device for manufacturing sheet having fine shape transferred thereon
KR101503331B1 (en) 2007-09-28 2015-03-17 도레이 카부시키가이샤 Method and device for manufacturing sheet having fine shape transferred thereon
US8814556B2 (en) * 2007-09-28 2014-08-26 Toray Industries, Inc Method and device for manufacturing sheet having fine shape transferred thereon
US9573300B2 (en) 2007-09-28 2017-02-21 Toray Industries, Inc. Method and device for manufacturing sheet having fine shape transferred thereon
US20090243152A1 (en) * 2008-03-28 2009-10-01 Kabushiki Kaisha Toshiba Imprinting method and stamper
US7833458B2 (en) 2008-03-28 2010-11-16 Kabushiki Kaisha Toshiba Imprinting method and stamper
US8192637B2 (en) 2008-03-31 2012-06-05 Hitachi, Ltd. Method and apparatus for imprinting microstructure and stamper therefor
US20090243126A1 (en) * 2008-03-31 2009-10-01 Ryuta Washiya Method and apparatus for imprinting microstructure and stamper therefor
US20110223345A1 (en) * 2008-06-26 2011-09-15 Morio Tomiyama Method for manufacturing multilayer information recording medium
US8685495B2 (en) 2008-06-26 2014-04-01 Panasonic Corporation Method for manufacturing multilayer information recording medium
US20110171431A1 (en) * 2008-06-30 2011-07-14 Masahiko Ogino Fine structure and stamper for imprinting
US20100092727A1 (en) * 2008-08-21 2010-04-15 Fuji Electric Device Technology Co., Ltd. Nanoimprinting mold and magnetic recording media manufactured using same
FR2935842A1 (en) * 2008-09-05 2010-03-12 Commissariat Energie Atomique Textured zone forming method for solar cell substrate, involves forming mask in film by applying pressure using mold, and etching mask and substrate till mask is entirely removed, where mask has patterns complementary to that of substrate
FR2935841A1 (en) * 2008-09-05 2010-03-12 Commissariat Energie Atomique Texturization mold forming method for fabricating photovoltaic solar cell, involves eliminating etching mask, forming texturization mold by electrolytic deposition of metal layer on support, and disintegrating support and texturization mold
US20100330221A1 (en) * 2009-06-26 2010-12-30 Fuji Electric Device Technology Co. Ltd. Imprint stamper and imprint device
CN102744877A (en) * 2011-04-19 2012-10-24 松下电器产业株式会社 Apparatus for manufacturing sheet instrument and method for manufacturing sheet instrument
JP2015198215A (en) * 2014-04-03 2015-11-09 大日本印刷株式会社 Substrate for imprint mold and manufacturing method therefor, and imprint mold
US10409156B2 (en) * 2015-02-13 2019-09-10 Canon Kabushiki Kaisha Mold, imprint apparatus, and method of manufacturing article
KR20160100255A (en) * 2015-02-13 2016-08-23 캐논 가부시끼가이샤 Mold, imprint apparatus, and method of manufacturing article
CN105892230A (en) * 2015-02-13 2016-08-24 佳能株式会社 Mold, imprint apparatus, and method of manufacturing article
KR102004588B1 (en) * 2015-02-13 2019-07-26 캐논 가부시끼가이샤 Mold, imprint apparatus, and method of manufacturing article
US20180268858A1 (en) * 2015-09-18 2018-09-20 Dai Nippon Printing Co., Ltd. Method for manufacturing information recording medium
CN108028053A (en) * 2015-09-18 2018-05-11 大日本印刷株式会社 Method for manufacturing information recording carrier
US10706885B2 (en) * 2015-09-18 2020-07-07 Dai Nippon Printing Co., Ltd. Method for manufacturing information recording medium
EP3352172A4 (en) * 2015-09-18 2019-05-08 Dai Nippon Printing Co., Ltd. Method for forming information recording media
US10783917B1 (en) 2016-11-29 2020-09-22 Seagate Technology Llc Recording head with transfer-printed laser diode unit formed of non-self-supporting layers
WO2020163524A1 (en) * 2019-02-05 2020-08-13 Digilens Inc. Methods for compensating for optical surface nonuniformity

Also Published As

Publication number Publication date
JP2004288845A (en) 2004-10-14
US20120256346A1 (en) 2012-10-11
US8632714B2 (en) 2014-01-21
JP4340086B2 (en) 2009-10-07

Similar Documents

Publication Publication Date Title
US10025206B2 (en) Imprint lithography
TWI416280B (en) Imprint stamp comprising cyclic olefin copolymer
US7887739B2 (en) Methods and apparatus of pressure imprint lithography
US7771917B2 (en) Methods of making templates for use in imprint lithography
JP5325914B2 (en) Automated liquid dispensing method and system for transfer lithography process
JP5102879B2 (en) Large-area nanopattern forming method and apparatus
TWI295227B (en) Step and repeat imprint lithography process
Li et al. Fabrication of circular optical structures with a 20 nm minimum feature size using nanoimprint lithography
KR100700238B1 (en) Replication and transfer of microstructures and nanostructures
US9645504B2 (en) Large area nanopatterning method and apparatus
KR101587665B1 (en) Manufacturing optical elements
KR100907573B1 (en) Manufacturing method of mold, imprint apparatus and structure
KR101357815B1 (en) Imprint lithography system
JP5873944B2 (en) Imprint lithography apparatus and method
JP4658130B2 (en) Decal transfer lithography
US6671034B1 (en) Microfabrication of pattern imprinting
EP1743217B1 (en) Method for imprint lithography at constant temperature
US7538858B2 (en) Photolithographic systems and methods for producing sub-diffraction-limited features
US7632087B2 (en) Composite stamper for imprint lithography
EP1497102B1 (en) Device and method for transferring a pattern to a substrate
JP5117318B2 (en) Nanoimprinting stamper and fine structure transfer apparatus using the stamper
KR100855724B1 (en) Imprint lithography
US7022465B2 (en) Method in connection with the production of a template and the template thus produced
JP4239439B2 (en) Optical device, its manufacturing method, and optical transmission device
JP4330168B2 (en) Mold, imprint method, and chip manufacturing method

Legal Events

Date Code Title Description
AS Assignment

Owner name: HITACHI, LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:OGINO, MASAHIKO;MIYAUCHI, AKIHIRO;MOTOWAKI, SIGEHISA;AND OTHERS;REEL/FRAME:015502/0619;SIGNING DATES FROM 20040415 TO 20040422

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION