US20040149223A1 - Inductively coupled plasma downstream strip module - Google Patents

Inductively coupled plasma downstream strip module Download PDF

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Publication number
US20040149223A1
US20040149223A1 US10/740,717 US74071703A US2004149223A1 US 20040149223 A1 US20040149223 A1 US 20040149223A1 US 74071703 A US74071703 A US 74071703A US 2004149223 A1 US2004149223 A1 US 2004149223A1
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United States
Prior art keywords
plasma
chamber
substrate
feed gas
containment chamber
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Abandoned
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US10/740,717
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Wenli Collison
Michael Barnes
Tuqiang Ni
Butch Berney
Wayne Vereb
Brian McMillin
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Lam Research Corp
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Lam Research Corp
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Priority to US09/052,906 priority Critical patent/US6203657B1/en
Priority to US09/765,920 priority patent/US6692649B2/en
Application filed by Lam Research Corp filed Critical Lam Research Corp
Priority to US10/740,717 priority patent/US20040149223A1/en
Publication of US20040149223A1 publication Critical patent/US20040149223A1/en
Application status is Abandoned legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357Generation remote from the workpiece, e.g. down-stream
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means

Abstract

A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate. A chamber interconnecting port interconnects the plasma containment chamber and the secondary chamber. The chamber interconnecting port allows gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate. The chamber interconnecting port is positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed within the plasma containment chamber.

Description

    BACKGROUND OF THE INVENTION
  • The present invention relates to plasma processing modules for the processing of a semiconductor substrate in the manufacture of integrated circuits. More particularly, the present invention relates to downstream, inductively coupled plasma processing modules and methods of using the modules during the processing of the semiconductor substrates. [0001]
  • Semiconductor substrates are typically processed using plasma processing modules to perform various process steps during the manufacture of the semiconductor devices. Generally, these plasma-enhanced processes are well known to those skilled in the art and include various etching processes and stripping processes. [0002]
  • In recent trends, plasma-enhanced processes have been more frequently used to perform resist stripping. Traditionally, the resist stripping or ashing process has been considered a fairly straight forward process. However, due to the small feature size and increased complexity of devices now common in the semiconductor industry, conventional plasma processing modules tend to cause plasma-induced damage to the semiconductor devices during the processing of the semiconductor substrates. To more thoroughly illustrate the problems associated with the use of conventional plasma processing modules, a prior art inductively coupled plasma processing module [0003] 100 will be described with reference to FIG. 1.
  • As illustrated in FIG. 1, plasma processing module [0004] 100 includes a plasma chamber 102 formed by chamber walls 104 and dielectric window 106. Plasma processing module 100 includes a feed gas inlet 108 for allowing feed gasses 109 to flow into chamber 102. An exhaust port 110 is also provided for exhausting gases from chamber 102. An inductive source 112, typically taking the form of a coil positioned on dielectric window 106, is used to energize feed gases 109 within chamber 102 and strike a plasma within the chamber. In this example, inductive source 112 is powered by RF power supply 114.
  • With the above described configuration, the shape of inductive source [0005] 112 causes the plasma within chamber 102 to form a plasma having a primary dissociation zone 116. This primary dissociation zone is the region within the chamber that the plasma most efficiently dissociates feed gases 109 (for example O2 and H2O vapor) into neutral non-charged species (for example O, H, and OH). In the case in which inductive source 112 takes the form of a coil attached to dielectric window 106, primary dissociation zone 116 takes the form of a generally donut shaped region located within chamber 102 directly below the coils of inductive source 112.
  • Still referring to FIG. 1, plasma processing module [0006] 100 also includes a liner 118, such as a quartz liner, for protecting the walls of the plasma chamber from the plasma and reducing the recombination of neutral radicals like O or OH. A chuck 120 is positioned in the bottom of chamber 102 and is configured to support a semiconductor substrate 122. As is known in the art, chuck 120 may be heated to improve the efficiency of the process. Plasma processing module 100 also includes a quartz baffle 124 located above substrate 122. Baffle 124 includes a plurality of openings 126 formed through baffle 124 which cause any gases flowing through chamber 102 to be redistributed so that the gases flow more evenly over substrate 122 than would be the case if baffle 124 were not included in module 100.
  • Although baffle [0007] 124 partially shields substrate 122 from direct exposure to the plasma, portions of substrate 122 remain directly exposed to the plasma. This direct exposure to the substrate to the plasma may cause different types of the plasma-induced damage. For example, in semiconductor substrates having small feature sizes such as 0.25 μm devices, charge damage can occur when electrically charged species from the plasma accumulate non-uniformly on device gates and interconnections. This charge accumulation can lead to large voltage potentials across individual gates or between devices that can cause gate degradation or loss of gate integrity. Device damage has been found to correlate with the charge species dose that the device is exposed to during the process. Therefore, exposing the device directly to charged species produced within the plasma at high concentration (e.g., >1011/cm3) for even a short duration of time (e.g., seconds) or moderate concentration (e.g., 109/cm3 to 1010/cm3) for a longer duration (e.g., tens of seconds) can cause significant problems for this type of device. In another example, device damage has been attributed to direct UV radiation exposure from the plasma. In the conventional configuration of an inductively coupled plasma processing module, such as module 100 described above, portions of substrate 122 are directly exposed to UV radiation from the plasma.
  • Another problem associated with conventional inductively coupled plasma processing modules such as module [0008] 100 is that they often provide relatively poor dissociation of the feed gases. In some cases, much of the RF energy is input into ionization at the expense of dissociation of the feed gas. This poor dissociation decreases the efficiency of and therefore increases the time necessary for processing, further contributing to the above described problem of charge damage to devices on the substrate. This poor dissociation is at least in part due to the fact that the feed gases 109 are not forced to flow directly through the primary dissociation zones 116. As mentioned above, primary dissociation zones 116 are the regions within chamber 102 in which the plasma most efficiently dissociates the feed gases.
  • The present invention provides improved designs for inductively coupled plasma processing modules and methods of using the novel modules to process semiconductor substrates. These designs provide an isolated plasma containment chamber within the module. This isolated plasma containment chamber prevents the semiconductor substrate from being directly exposed to line-of-sight UV radiation produced by the plasma and substantially reduces the concentration of charged species that the semiconductor substrate is exposed to compared to prior art inductively coupled plasma processing modules. Also, the plasma processing modules of the present invention provide a module that improves the dissociation of the feed gases compared to prior art inductively coupled plasma processing modules. This is accomplished by specifically controlling the flow of gases through the module. [0009]
  • SUMMARY OF THE INVENTION
  • As will be described in more detail hereinafter, a plasma processing module and methods of using the plasma processing module to process a substrate are herein disclosed. The plasma processing module of the present invention includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and for striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate or shield. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate. A chamber interconnecting port interconnects the plasma containment chamber and the secondary chamber. The chamber interconnecting port allows gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate. The chamber interconnecting port is positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed in the plasma containment chamber. [0010]
  • In one embodiment, the feed gas inlet port and the chamber interconnecting port are connected to the plasma containment chamber such that the flow of any feed gases fed into the plasma containment chamber through the feed gas inlet port is directed substantially through the primary dissociation zone of the plasma within the plasma containment chamber. In another embodiment, the feed gas inlet port and the chamber interconnecting port are connected to the plasma containment chamber such that the flow of any feed gases fed into the plasma containment chamber through the feed gas inlet port is caused to pass substantially through the primary dissociation zone of the plasma within the plasma containment chamber two times. [0011]
  • Preferably, the secondary chamber further includes a baffle plate having a plurality of openings formed through the baffle plate. The baffle plate is positioned within the secondary chamber above the substrate such that the plurality of openings in the baffle plate cause any gases moving through the secondary chamber and out the exhaust port to flow over the substrate in a more uniformly distributed flow pattern compared to what the flow pattern would be without the baffle plate. Also, the plasma containment plate separating the plasma containment chamber from the secondary chamber is preferably grounded. [0012]
  • In still another embodiment, the module further includes an additional feed gas port. The additional feed gas port is positioned such that additional feed gases may be injected into the plasma processing module without having the additional feed gases flow through the plasma containment chamber. In one version of this embodiment, the additional feed gas port is connected to the secondary chamber such that additional feed gases may be injected into the secondary chamber without passing through the plasma containment chamber. [0013]
  • In one embodiment, the plasma processing module includes an RF power supply for powering the inductively coupled source of the module. Additionally, the module may further include a biasing arrangement connected to the chuck in the secondary chamber. This biasing arrangement is configured to apply a bias capable of inducing a plasma within the secondary chamber. In one version of this embodiment, the biasing arrangement is configured to apply a soft bias capable of inducing a plasma having a plasma density of no more than about 10[0014] 8 ions/cm3. In one specific example, the biasing arrangement includes an RF power supply for applying the bias.
  • The various embodiments of the plasma processing module of the present invention may be used in a variety of methods of processing a substrate within a plasma processing module. In one embodiment, a substrate is placed within the secondary chamber of the processing module. A feed gas is then caused to be fed into the plasma containment chamber through the feed gas inlet port. A plasma is energized within the plasma containment chamber using an inductively coupled source to energize the feed gas within the plasma containment chamber. The gases are drawn through the plasma processing module by exhausting the gases from the secondary chamber through the exhaust port. These gases are used to perform certain processes on the substrate. [0015]
  • In one embodiment of a method of the invention, the process of the method is a stripping process for stripping a resist layer from the substrate. In one version of this method, the step of feeding a feed gas into the plasma processing chamber includes the step of feeding O[0016] 2 and H2O vapor into the plasma processing chamber.
  • In another embodiment of a method of the invention, a plasma processing module that includes the biasing arrangement connected to the chuck in the secondary chamber is used. The plasma processing module also includes an additional feed gas port positioned such that additional feed gases may be injected into the plasma processing module without having the additional feed gases flow through the plasma containment chamber. The process of this method is a stripping process for stripping a resist layer and various residues from the substrate. In this embodiment, an additional fluorine containing feed gas is injected into the plasma processing module through the additional feed gas port. Also, a soft bias is applied to the chuck such that a plasma is induced within the secondary chamber. In one version of this embodiment, a bias of between about 20-500 W, and preferably 20-200W for a 200 mm substrate (about 0.6 to about 0.65 W/cm[0017] 2) is applied thereby inducing a plasma having a plasma density of preferably no more than about 108 ions/cm3 and at most about 109 ions/cm3.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The features of the present invention may best be understood by reference to the following description of the presently preferred embodiments together with the accompanying drawings. [0018]
  • FIG. 1 is a simplified cross-sectional view of a prior art inductively coupled plasma processing module. [0019]
  • FIG. 2A is a cross sectional view of a first embodiment of an inductively coupled plasma processing chamber designed in accordance with the invention. [0020]
  • FIG. 2B is a cross sectional view of a second embodiment of an inductively coupled plasma processing chamber designed in accordance with the invention. [0021]
  • FIG. 3 is a cross sectional view of a third embodiment of an inductively coupled plasma processing chamber designed in accordance with the invention. [0022]
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • An invention is described herein for providing a downstream, inductively coupled plasma processing module and methods of using the module during the processing of a semiconductor substrate. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be obvious to one skilled in the art that the present invention may be embodied in a wide variety of specific configurations. Also, well known plasma-enhanced processes and other processes associated with the production of integrated circuits on semiconductor substrates will not be described in detail in order not to unnecessarily obscure the present invention. [0023]
  • Although the inventive plasma processing module will be described as an inductively coupled plasma processing module using an inductively coupled RF transformer coupled source, the inventive module may be powered using any inductively coupled source such as helicon or helical resonators. These power sources, among others, are readily available commercially. [0024]
  • FIG. 2A illustrates a simplified schematic of a downstream, inductively coupled plasma processing module [0025] 200 designed in accordance with the present invention. For illustrative purposes, like reference numerals will be used throughout the various figures for like components. Generally, module 200 is a module similar to module 100 described above except that, in accordance with the invention, module 200 includes a plasma containment chamber 202 and a secondary chamber 204. That is, module 200 includes a plasma containment plate or shield 206 that separates plasma containment chamber 202 from secondary chamber 204.
  • In a manner similar to that described above in the background for module [0026] 100, plasma containment chamber 202 and secondary chamber 204 are formed by chamber walls 104 and dielectric window 106. Plasma processing module 200 also includes feed gas inlet 108 for allowing feed gasses 109 to flow into plasma containment chamber 202. Exhaust ports 110 are also provided for exhausting gases from secondary chamber 204. Inductive source 112, in this case taking the form of a coil positioned above dielectric window 106, is used to energize feed gases 109 within plasma containment chamber 202 and strike a plasma within plasma containment chamber 202. In this example, inductive source 112 is powered by RF power supply 114 which takes the form of a transformer coupled source. Typical inductive source power ranges from about 250 W to about 5000 W or more.
  • With the above described arrangement, the specific configuration and shape of inductive source [0027] 112 causes the plasma within plasma containment chamber 202 to form a plasma having primary dissociation zone 116. As described above, this primary dissociation zone is the region within the chamber that the plasma most efficiently dissociates feed gases 109 into neutral non-charged species. In the case in which inductive source 112 takes the form of a coil attached to dielectric window 106, primary dissociation zone 116 takes the form of a generally donut shaped region located within plasma containment chamber 202 directly below the coils of inductive source 112.
  • Plasma processing module [0028] 200 also includes liner 118 for protecting the walls of plasma containment chamber 202 and secondary chamber 204 from corrosion or erosion and for reducing recombination of reactive radicals. Liner 118 may be a quartz liner or any other suitable and readily available liner material capable of protecting the chamber walls. Chuck 120 is positioned in the bottom of secondary chamber 204 and is configured to support semiconductor substrate 122. As is known in the art, chuck 120 may be heated to improve the efficiency of the process. As was described above for module 100 plasma processing module 200 also includes quartz baffle 124 located above substrate 122. Baffle 124 includes openings 126 formed through baffle 124 which cause any gases flowing through secondary chamber 204 to be redistributed so that the gases flow more evenly over substrate 122 than would be the case if baffle 124 were not included in module 200.
  • During plasma processing, the gas pressure within the plasma containment and secondary chambers may be from about 10 mT to about 10 T or more, but typically the operating pressure is about 1 T. Feed gas flow may range from about 100 standard cubic centimeters per minute (sccm) to about 5,000 sccm or more for a 200 mm substrate. [0029]
  • In accordance with the invention, module [0030] 200 further includes a chamber interconnecting port 208 that interconnects plasma containment chamber 202 and the secondary chamber 204. Chamber interconnecting port 208 allows gases from plasma containment chamber 202 to flow into secondary chamber 204 during the processing of the substrate. Chamber interconnecting port 208 is positioned between plasma containment chamber 202 and secondary chamber 204 such that, when substrate 122 is positioned on chuck 120 in the secondary chamber, there is preferably no substantial direct line-of-sight exposure of substrate 122 to the primary dissociation zone 116 of the plasma formed within plasma containment chamber 202. If desired (but not required in all cases), chamber interconnecting port 208 may be positioned between plasma containment chamber 202 and secondary chamber 204 such that there is no point on substrate 122 that is in direct line-of sight with the primary dissociation zone 116 of the plasma formed within plasma containment chamber 202.
  • Because chamber interconnecting port [0031] 208 is positioned between plasma containment chamber 202 and secondary chamber 204 such that no points on substrate 122 are in direct line-of-sight with the primary dissociation zone 116 when the substrate is positioned on chuck 120, the module configuration of the invention substantially eliminates the potential for damage to the substrate due to direct UV radiation. More importantly, because primary dissociation zone 116 of the plasma is substantially surrounded by the chamber walls of plasma containment chamber 202, the vast majority of charged species formed within plasma containment chamber 202 collide with one of the walls. This substantially reduces the concentration of charged species that are able to pass through chamber interconnecting port 208 and into secondary chamber 204. This substantial reduction of the concentration of charged species that are allowed to pass through chamber interconnecting port 208 substantially reduces the dosage of charged species that substrate 122 is exposed to. This reduces the chances of causing the charge damage to any devices on substrate 122 as described above in the background.
  • In one preferred embodiment, plasma containment plate [0032] 206 is grounded as indicated by ground 210 in FIG. 2A. This grounding causes containment plate 206 to attract any charged species and further encourages any charged species to collide with containment plate 206. This further prevents charged species from passing from plasma containment chamber 202 into secondary chamber 204.
  • In another aspect of the invention, feed gas inlet [0033] 108 and chamber interconnecting port 206 are connected to plasma containment chamber 202 such that the flow of any feed gases 109 fed into the plasma containment chamber is directed substantially through primary dissociation zone 116 of the plasma within plasma containment chamber 202. This is illustrated by arrows 212 in FIG. 2A. By placing feed gas inlet 108 and chamber interconnecting port 208 on substantially opposite sides of dissociation zone 116, this configuration improves the efficiency at which the fed gas is dissociated and reduces processing time and/or reduces the damage to the substrate due to charged species. This configuration also helps prevent charged species from moving from plasma containment chamber 202 into secondary chamber 204. This configuration also improves the efficiency at which the module produces the desirable neutral species that are used for processing the substrate compared to prior art modules thereby improving the efficiency of the overall module.
  • Referring now to FIG. 2B, several additional features that may be included in the novel module design will now be described with reference to module [0034] 220 of FIG. 2B. Although FIG. 2A illustrates feed gas inlet 208 as being multiple inlets located on the outer periphery of plasma containment chamber 202 and chamber interconnecting port 208 as being located in the center of plasma containment plate 206, this is not a requirement. Instead, feed gas inlet 208 may be a single inlet located in the center of the top of plasma containment chamber 202 and chamber interconnecting port 208 may be multiple ports located around the periphery of plasma containment plate 206 as illustrated in FIG. 2B. This configuration causes feed gases 109 to substantially flow through primary dissociation zone 116 as illustrated by arrows 212 in FIG. 2B and in a manner similar to that described above for FIG. 2A. Although this specific alternative is given, it should be understood that any appropriate positioning of the feed gas inlet and the chamber interconnecting port would equally fall within scope of the invention so long as their positioning prevents substrate 122 from having any significant direct line-of-site exposure to primary dissociation zone 116 as described above.
  • As also illustrated in FIG. 2B, and in accordance with the invention, plasma processing module [0035] 220 may further include an additional feed gas port 222. The additional feed gas port is positioned such that additional feed gases may be injected into the plasma processing module without having the additional feed gases flow through the plasma containment chamber. In the embodiment shown in FIG. 2B, additional feed gas ports 222 are connected to the secondary chamber such that additional feed gases may be injected into the secondary chamber without passing through the plasma containment chamber. Injecting the secondary gas in this manner may be advantageous since the secondary feed gas which may contain fluorine species is largely separated from the high ion concentration regions, which reduces potential erosion of the liner.
  • As described above, the plasma processing module includes an RF power supply for powering the inductively coupled source of the module. Additionally, the module may further include a biasing arrangement [0036] 224 connected to the chuck in the secondary chamber. This biasing arrangement is configured to apply a bias capable of inducing a plasma within the secondary chamber. In one version of this embodiment, the biasing arrangement is configured to apply a soft bias capable of inducing a plasma having a plasma density of no more than about 108 ions/cm3. In this specific example, the biasing arrangement includes an RF power supply 226 for applying the bias.
  • In another embodiment of a plasma processing module illustrated in FIG. 3 and indicated by reference numeral [0037] 300, feed gas inlet 108 and chamber interconnecting port 208 are connected to the plasma containment chamber such that the flow of any feed gases 109 fed into plasma containment chamber 202 through feed gas inlet 108 is caused to pass substantially through primary dissociation zone 116 of the plasma within the plasma containment chamber two times. This is illustrated by arrows 302 in FIG. 3. In the embodiment shown, this is accomplished by shifting plasma containment chamber 202 of the module over to one side of the module. This allows feed gas inlet 108 to be positioned on one side of plasma containment chamber 202 and chamber interconnecting port 208 to be located on the opposite side of plasma containment chamber 202.
  • The above described positioning of inlet [0038] 108 and port 208 forces any feed gas 109 fed into plasma containment chamber 202 to pass substantially through primary dissociation zone 116 of the plasma two times as indicated by gas flow arrows 302. Because the feed gasses are forced to pass through the primary dissociation zone twice, this configuration further improves the efficiency at which the module dissociates the feed gas into neutral species rather than charged species. Also, since chamber interconnecting port 208 now includes a right angle bend, this configuration insures that there is no direct line-of sight exposure of the substrate to the primary dissociation zone 116. Additionally, the chamber walls 104 that help form chamber interconnecting port 208 may be grounded. This grounding of these walls attracts any charged species causing them to collide with the wall thereby helping to prevent the charged species from flowing from the plasma containment chamber into the secondary chamber.
  • The various embodiments of the plasma processing module of the present invention may be used in a variety of methods of processing a substrate within a plasma processing module. In one embodiment illustrated in FIG. 2A, substrate [0039] 122 is placed on chuck 120 within secondary chamber 204 of plasma processing module 200. Feed gas 109 is then caused to be fed into the plasma containment chamber through feed gas inlet 108. A plasma is energized within plasma containment chamber 202 using inductively coupled source 112 to energize feed gas 109 within plasma containment chamber 202. The gases are drawn through the plasma processing module by exhausting the gases from secondary chamber 204 through exhaust ports 110. This is typically done using a vacuum pump connected to exhaust ports 110 as is known in the art. The gases moving through secondary chamber 204 are used to perform certain processes on substrate 122.
  • In the embodiment of the method of the invention currently being described, the process of the method is a stripping process for stripping a resist layer [0040] 310 from substrate 122. In one version of this method, oxygen and water vapor are fed into the plasma processing chamber as the feed gas. This feed gas is dissociated into various species including O, H, OH, O+, O2 +, electrons, H+, and OH. However, since the feed gas is forced to flow substantially through primary dissociation zone 116 as described above, a higher percentage of the feed gas is dissociated into desirable neutral species (i.e. O) that may be used to strip resist layer 310 from substrate 122.
  • In another embodiment of a method of the invention illustrated in FIG. 2B, plasma processing module [0041] 220, which includes biasing arrangement 224 connected to chuck 120 in secondary chamber 204, is used. Plasma processing module 220 also includes additional feed gas ports 222 positioned such that additional feed gases 314 may be injected into plasma processing module 220 without having additional feed gases 314 flow through plasma containment chamber 202. The process of this method is also a stripping process for stripping a resist layer as described above. However, this process is also able to strip various residues, indicated by residues 312 in FIG. 2B, from substrate 122. In this embodiment, additional feed gas 314 is a fluorine containing feed gas that is injected into secondary chamber 204 through additional feed gas ports 222. Also, a soft bias is applied to chuck 120 using biasing arrangement 224 such that a plasma 316 is induced within secondary chamber 204. In one version of this embodiment, a bias of between about 20-200W is applied to chuck 120. This relatively soft bias induces plasma 316 such that plasma 316 has a plasma density of no more than about 108 ions/cm3.
  • Although the above described method has been described as using a specific range of biasing that induces a specific plasma density, it should be understood that this is not a requirement of the invention. Instead, as would be understood by those skilled in the art, the amount of bias applied and the plasma density may be varied to suit the specific application. [0042]
  • The above described method of using additional feed gases and applying a soft bias to induce a low density plasma provides a unique plasma processing method that is very useful in a wide variety of resist and residue stripping applications. For example, etching applications with features of 0.25 μm often require sidewall passivation chemistries to maintain the required feature profile and critical dimensions. In typical poly etch applications, for example, Cl[0043] 2 and HBr are used in conjunction with O2 or N2 additives. Sidewall residues which are composed of Si and one or more of Br, Cl, O, N, and C (from the photoresist) are formed during the main and overetch processes. These sidewall residues must be removed before the substrate can be further processed. One possible alternative is to wet strip the residues. However, it would be advantageous to be able to remove these residues during a plasma strip process. This can be accomplished in some applications by applying a soft and low power bias (20-200 W) during a remote inductively coupled plasma strip process as described above. A typical resist stripping chemistry would be largely composed of O2 with a dilute addition of fluorine containing species such as CF4, C2F6, NF3, or SF6.
  • In oxide etch applications such as via etch, sidewall residues formed during the main etch and overetch steps may also not be successfully removed during a plasma resist strip. These residues associated with vias are often referred to as “veils” and may contain titanium and/or aluminum compounds because the underlying layer in a typical via etch may be Ti/TiN (often used as an anti-reflective coating on aluminum interconnections) or aluminum layers. During the overetch process, for example, material from the bottom of the via is sputtered onto the sidewalls which leads to the formation of the veils. These residues are particularly difficult to remove even with fluorinated chemistries. Hence, it can be advantageous to apply a soft bias (again 20-100 W) to ensure that the via veils are removed during the photoresist stripping process. [0044]
  • Depending upon the specific application, the soft bias may not be applied at all in some resist strip processes. However, it may be applied during a portion or all of other resist strip processes. Additionally, the remote inductively coupled plasma process of the present invention may be applied to photoresist stripping following metal (aluminum) etching. In this application, the primary concern is corrosion protection where the goal is to remove the chlorine species from the metal lines prior to exposing them to the atmosphere. Chlorine present on the metal lines can form HCl when exposed to moist air. [0045]
  • Since the above described processes that utilize a bias applied to the chuck generally use a soft bias, this general approach avoids causing charge damage to the devices on the substrate. Device charge damage has been found to correlate with charge species dose to the device. With the high density plasma being generated in a remote plasma containment chamber in this invention, the current dose to the device even with the soft bias applied in the secondary chamber is low enough to not cause device damage. This is because the plasma density induced by the soft bias is typically less than 10[0046] 8 ions/cm3.
  • Although only a few specific embodiments of a plasma processing module have been described in detail herein, it is to be understood that the present invention is not limited to these specific configurations. In fact, the invention would equally apply regardless of the specific configuration of the module so long as an the high density plasma formed in the plasma containment chamber is energized using an inductively coupled source and so long as the substrate located in the secondary chamber has no substantial line-of-sight exposure to the primary dissociation zone of the plasma in the plasma containment chamber. [0047]
  • Also, while only a few specific examples of methods of how a plasma processing module of the invention may be used to process a substrate have been described in terms of several preferred embodiments, there are alterations, permutations, and equivalents which fall within the scope of this invention. It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations, and equivalents as fall within the true spirit and scope of the present invention. [0048]

Claims (25)

What is claimed is:
1. A plasma processing module for processing a substrate, the plasma processing module comprising:
a) a plasma containment chamber including a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate;
b) an inductively coupled source capable of energizing the feed gas and striking a plasma within the plasma containment chamber, the specific configuration of the inductively coupled source causing the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber;
c) a secondary chamber separated from the plasma containment chamber by a plasma containment plate, the secondary chamber including a chuck and an exhaust port, the chuck being configured to support the substrate during the processing of the substrate and the exhaust port being connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate; and
d) a chamber interconnecting port that interconnects the plasma containment chamber and the secondary chamber, the chamber interconnecting port allowing gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate, the chamber interconnecting port being positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed within the plasma containment chamber.
2. A plasma processing module according to claim 1 wherein the feed gas inlet port and the chamber interconnecting port are connected to the plasma containment chamber such that the flow of any feed gases fed into the plasma containment chamber through the feed gas inlet port is directed substantially through the primary dissociation zone of the plasma within the plasma containment chamber.
3. A plasma processing module according to claim 1 wherein the feed gas inlet port and the chamber interconnecting port are connected to the plasma containment chamber such that the flow of any feed gases fed into the plasma containment chamber through the feed gas inlet port is caused to pass substantially through the primary dissociation zone of the plasma within the plasma containment chamber two times.
4. A plasma processing module according to claim 1 wherein the secondary chamber further includes a baffle plate having a plurality of openings formed through the baffle plate, the baffle plate being positioned within the secondary chamber above the substrate such that the plurality of openings in the baffle plate cause any gases moving through the secondary chamber and out the exhaust port to flow over the substrate in a more uniformly distributed flow pattern compared to what the flow pattern would be without the baffle plate.
5. A plasma processing module according to claim 1 wherein the plasma containment plate separating the plasma containment chamber from the secondary chamber is grounded.
6. A plasma processing module according to claim 1 wherein the module further includes an additional feed gas port, the additional feed gas port being positioned such that additional feed gases may be injected into the plasma processing module without having the additional feed gases flow through the plasma containment chamber.
7. A plasma processing module according to claim 6 wherein the additional feed gas port is connected to the secondary chamber such that additional feed gases may be injected into the secondary chamber without passing through the plasma containment chamber.
8. A plasma processing module according to claim 1 wherein the module includes an RF power supply for powering the inductively coupled source.
9. A plasma processing module according to claim 1 wherein the module includes a biasing arrangement connected to the chuck in the secondary chamber for applying a bias capable of inducing a plasma within the secondary chamber.
10. A plasma processing module according to claim 9 wherein the biasing arrangement is configured to apply a soft bias capable of inducing a plasma having a plasma density of no more than about 108 ions/cm3.
11. A plasma processing module according to claim 9 wherein the biasing arrangement includes an RF power supply for applying the bias.
12. A method of processing a substrate within a plasma processing module, the method comprising the steps of:
a) providing a plasma processing module including
i) a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate,
ii) a secondary chamber,
iii) a plasma containment plate separating the plasma containment chamber from the secondary chamber, and
iv) a chamber interconnecting port that interconnects the plasma containment chamber and the secondary chamber allowing gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate;
b) placing a substrate within the secondary chamber, the secondary chamber including a chuck and an exhaust port, the chuck being configured to support the substrate during the processing of the substrate and the exhaust port being connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate;
c) causing a feed gas to be fed into the plasma containment chamber through the feed gas inlet port;
d) using an inductively coupled source to energize the feed gas within the plasma containment chamber and strike a plasma within the plasma containment chamber, the specific configuration of the inductively coupled source causing the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber; and
e) exhausting gases from the secondary chamber through the exhaust port such that the feed gas is drawn from the plasma containment chamber through the chamber interconnecting port into the secondary chamber and out of the plasma processing module through the exhaust port, the chamber interconnecting port being positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed within the plasma containment chamber.
13. A method according to claim 12 wherein the process of the method is a stripping process for stripping a resist layer from the substrate.
14. A method according to claim 13 wherein the step of feeding a feed gas into the plasma processing chamber includes the step of feeding at least one of O2 and H2O vapor into the plasma processing chamber.
15. A method according to claim 12 wherein the feed gas inlet port and the chamber interconnecting port are connected to the plasma containment chamber such that the flow of any feed gases fed into the plasma containment chamber through the feed gas inlet port is directed substantially through the primary dissociation zone of the plasma within the plasma containment chamber.
16. A method according to claim 12 wherein the feed gas inlet port and the chamber interconnecting port are connected to the plasma containment chamber such that the flow of any feed gases fed into the plasma containment chamber through the feed gas inlet port is caused to pass substantially through the primary dissociation zone of the plasma within the plasma containment chamber two times.
17. A method according to claim 12 wherein the secondary chamber further includes a baffle plate having a plurality of openings formed through the baffle plate, the baffle plate being positioned within the secondary chamber above the substrate such that the plurality of openings in the baffle plate cause any gases moving through the secondary chamber and out the exhaust port to flow over the substrate in a more uniformly distributed flow pattern compared to what the flow pattern would be without the baffle plate.
18. A method according to claim 12 wherein the method includes the step of grounding the plasma containment plate separating the plasma containment chamber from the secondary chamber.
19. A method according to claim 12 wherein the plasma processing module further includes an additional feed gas port positioned such that additional feed gases may be injected into the plasma processing module without having the additional feed gases flow through the plasma containment chamber and wherein the method further includes the step of injecting an additional feed gas into the plasma processing module through the additional feed gas port.
20. A method according to claim 19 wherein the additional feed gas port is connected to the secondary chamber such that the additional feed gases are injected into the secondary chamber without passing through the plasma containment chamber.
21. A method according to claim 12 wherein the module includes an RF power supply for powering the inductively coupled source.
22. A method according to claim 12 wherein the plasma processing module further includes a biasing arrangement connected to the chuck in the secondary chamber and wherein the method further includes the step of applying a bias to the biasing arrangement that is capable of inducing a plasma within the secondary chamber.
23. A method according to claim 22 wherein the step of applying a bias to the biasing arrangement includes the step of applying a soft bias to the biasing arrangement thereby inducing a plasma having a plasma density of no more than about 108 ions/cm3.
24. A method according to claim 22 wherein the biasing arrangement includes an RF power supply for applying the bias.
25. A method according to claim 22 wherein
a) the process of the method is a stripping process for stripping a resist layer and various residues from the substrate,
b) the plasma processing module further includes an additional feed gas port positioned such that additional feed gases may be injected into the plasma processing module without having the additional feed gases flow through the plasma containment chamber, and
c) the method further includes the step of injecting an additional fluorine containing feed gas into the plasma processing module through the additional feed gas port.
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Cited By (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020197402A1 (en) * 2000-12-06 2002-12-26 Chiang Tony P. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20040235299A1 (en) * 2003-05-22 2004-11-25 Axcelis Technologies, Inc. Plasma ashing apparatus and endpoint detection process
US20040238123A1 (en) * 2003-05-22 2004-12-02 Axcelis Technologies, Inc. Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US20050221618A1 (en) * 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
US20090242514A1 (en) * 2005-10-05 2009-10-01 Jeff Alistair Hill Etch Process and Etching Chamber
US20120212136A1 (en) * 2009-08-27 2012-08-23 Mosaic Crystals Ltd. Penetrating plasma generating apparatus for high vacuum chambers
US8956980B1 (en) * 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9978564B2 (en) 2012-09-21 2018-05-22 Applied Materials, Inc. Chemical control features in wafer process equipment
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10032606B2 (en) 2012-08-02 2018-07-24 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10147620B2 (en) 2015-08-06 2018-12-04 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10186428B2 (en) 2016-11-11 2019-01-22 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10224180B2 (en) 2016-10-04 2019-03-05 Applied Materials, Inc. Chamber with flow-through source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10319603B2 (en) 2016-10-07 2019-06-11 Applied Materials, Inc. Selective SiN lateral recess
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
KR100338768B1 (en) * 1999-10-25 2002-05-30 윤종용 Method for removing oxide layer and semiconductor manufacture apparatus for removing oxide layer
KR100767762B1 (en) * 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 A CVD semiconductor-processing device provided with a remote plasma source for self cleaning
US6388383B1 (en) * 2000-03-31 2002-05-14 Lam Research Corporation Method of an apparatus for obtaining neutral dissociated gas atoms
DE10024883A1 (en) * 2000-05-19 2001-11-29 Bosch Gmbh Robert plasma etching
US6494986B1 (en) * 2000-08-11 2002-12-17 Applied Materials, Inc. Externally excited multiple torroidal plasma source
US6468388B1 (en) * 2000-08-11 2002-10-22 Applied Materials, Inc. Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate
US6551446B1 (en) 2000-08-11 2003-04-22 Applied Materials Inc. Externally excited torroidal plasma source with a gas distribution plate
US7094316B1 (en) 2000-08-11 2006-08-22 Applied Materials, Inc. Externally excited torroidal plasma source
US6453842B1 (en) * 2000-08-11 2002-09-24 Applied Materials Inc. Externally excited torroidal plasma source using a gas distribution plate
US6461972B1 (en) * 2000-12-22 2002-10-08 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
US6634313B2 (en) * 2001-02-13 2003-10-21 Applied Materials, Inc. High-frequency electrostatically shielded toroidal plasma and radical source
US6761796B2 (en) 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
US6548416B2 (en) * 2001-07-24 2003-04-15 Axcelis Technolgoies, Inc. Plasma ashing process
US6991739B2 (en) * 2001-10-15 2006-01-31 Applied Materials, Inc. Method of photoresist removal in the presence of a dielectric layer having a low k-value
JP4147017B2 (en) * 2001-10-19 2008-09-10 東京エレクトロン株式会社 Microwave plasma substrate processing apparatus
US6828241B2 (en) * 2002-01-07 2004-12-07 Applied Materials, Inc. Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source
KR100447248B1 (en) * 2002-01-22 2004-09-07 주성엔지니어링(주) Gas diffusion plate for use in ICP etcher
US7390755B1 (en) 2002-03-26 2008-06-24 Novellus Systems, Inc. Methods for post etch cleans
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
US6669347B2 (en) * 2002-04-19 2003-12-30 Lockheed Martin Corporation Window baffles
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
KR100470999B1 (en) * 2002-11-18 2005-03-11 삼성전자주식회사 Structure of chamber in etching apparatus of Inductive coupling plasma
KR100810794B1 (en) * 2002-11-20 2008-03-07 동경 엘렉트론 주식회사 Plasma processing apparatus
US20040129385A1 (en) * 2003-01-02 2004-07-08 International Business Machines Corporation Pre-loaded plasma reactor apparatus and application thereof
EP1623452B1 (en) * 2003-05-07 2006-11-22 Axcelis Technologies Inc. Wide temperature range chuck system
US20040237897A1 (en) * 2003-05-27 2004-12-02 Hiroji Hanawa High-Frequency electrostatically shielded toroidal plasma and radical source
US6777299B1 (en) * 2003-07-07 2004-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method for removal of a spacer
JP2005150632A (en) * 2003-11-19 2005-06-09 Tokyo Electron Ltd Reduction apparatus and method
JP4421609B2 (en) * 2004-03-31 2010-02-24 富士通マイクロエレクトロニクス株式会社 A method of manufacturing a substrate processing apparatus and a semiconductor device, an etching device
US7358192B2 (en) * 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
US8349128B2 (en) * 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7288484B1 (en) 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US7452660B1 (en) * 2004-08-11 2008-11-18 Lam Research Corporation Method for resist strip in presence of low K dielectric material and apparatus for performing the same
US20060051965A1 (en) * 2004-09-07 2006-03-09 Lam Research Corporation Methods of etching photoresist on substrates
EP1635384A1 (en) * 2004-09-10 2006-03-15 Actron Technology Corporation Method for manufacturing power diode and equipment for the same
US20060118240A1 (en) * 2004-12-03 2006-06-08 Applied Science And Technology, Inc. Methods and apparatus for downstream dissociation of gases
US20070272299A1 (en) * 2004-12-03 2007-11-29 Mks Instruments, Inc. Methods and apparatus for downstream dissociation of gases
US8193096B2 (en) * 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US7202176B1 (en) * 2004-12-13 2007-04-10 Novellus Systems, Inc. Enhanced stripping of low-k films using downstream gas mixing
US20060228889A1 (en) * 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US8129281B1 (en) 2005-05-12 2012-03-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
GB2447381B (en) * 2005-12-23 2010-02-24 Mks Instr Inc Methods and apparatus for downstream dissociation of gases
KR100758298B1 (en) * 2006-03-03 2007-09-12 삼성전자주식회사 Apparatus and method for treating substrates
JP5257917B2 (en) * 2006-04-24 2013-08-07 株式会社ニューパワープラズマ Multiple magnetic core is coupled inductively coupled plasma reactor
US7605063B2 (en) * 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates
US20070281106A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7740768B1 (en) 2006-10-12 2010-06-22 Novellus Systems, Inc. Simultaneous front side ash and backside clean
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7942112B2 (en) * 2006-12-04 2011-05-17 Advanced Energy Industries, Inc. Method and apparatus for preventing the formation of a plasma-inhibiting substance
US20080156631A1 (en) * 2006-12-27 2008-07-03 Novellus Systems, Inc. Methods of Producing Plasma in a Container
US20080156264A1 (en) 2006-12-27 2008-07-03 Novellus Systems, Inc. Plasma Generator Apparatus
US20080226838A1 (en) * 2007-03-12 2008-09-18 Kochi Industrial Promotion Center Plasma CVD apparatus and film deposition method
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
US8435895B2 (en) * 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US20090120584A1 (en) * 2007-11-08 2009-05-14 Applied Materials, Inc. Counter-balanced substrate support
US20090120368A1 (en) * 2007-11-08 2009-05-14 Applied Materials, Inc. Rotating temperature controlled substrate pedestal for film uniformity
JP4533926B2 (en) * 2007-12-26 2010-09-01 カシオ計算機株式会社 Film forming apparatus and a film forming method
US9591738B2 (en) * 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US7987814B2 (en) * 2008-04-07 2011-08-02 Applied Materials, Inc. Lower liner with integrated flow equalizer and improved conductance
US20090277587A1 (en) * 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US8916022B1 (en) 2008-09-12 2014-12-23 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US8043434B2 (en) * 2008-10-23 2011-10-25 Lam Research Corporation Method and apparatus for removing photoresist
EP2471087A1 (en) 2009-08-27 2012-07-04 Mosaic Crystals Ltd. Penetrating plasma generating apparatus for high vacuum chambers
JP4855506B2 (en) * 2009-09-15 2012-01-18 住友精密工業株式会社 Plasma etching apparatus
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
KR101770008B1 (en) * 2009-12-11 2017-08-21 노벨러스 시스템즈, 인코포레이티드 Enhanced passivation process to protect silicon prior to high dose implant strip
US8591661B2 (en) * 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US8590485B2 (en) * 2010-04-26 2013-11-26 Varian Semiconductor Equipment Associates, Inc. Small form factor plasma source for high density wide ribbon ion beam generation
US20110315319A1 (en) * 2010-06-25 2011-12-29 Applied Materials, Inc. Pre-clean chamber with reduced ion current
DE112010003657B4 (en) * 2010-07-21 2014-08-21 Toyota Jidosha Kabushiki Kaisha etcher
US9155181B2 (en) * 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
JP5685094B2 (en) * 2011-01-25 2015-03-18 東京エレクトロン株式会社 The plasma processing apparatus and plasma processing method
US20120222618A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Dual plasma source, lamp heated plasma chamber
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9070760B2 (en) * 2011-03-14 2015-06-30 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
KR101251880B1 (en) * 2011-12-29 2013-04-08 로체 시스템즈(주) Apparatus for etching of wafer and wafer etching method using the same
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US20140205769A1 (en) * 2013-01-22 2014-07-24 Veeco Ald Inc. Cascaded plasma reactor
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US8841574B1 (en) * 2013-11-18 2014-09-23 Georges J. Gorin Plasma extension and concentration apparatus and method
US9386677B1 (en) 2013-11-18 2016-07-05 Georges J. Gorin Plasma concentration apparatus and method
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition

Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
US4736087A (en) * 1987-01-12 1988-04-05 Olin Corporation Plasma stripper with multiple contact point cathode
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US4996077A (en) * 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US5091049A (en) * 1989-06-13 1992-02-25 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5114529A (en) * 1990-04-10 1992-05-19 International Business Machines Corporation Plasma processing method and apparatus
US5231334A (en) * 1992-04-15 1993-07-27 Texas Instruments Incorporated Plasma source and method of manufacturing
US5310703A (en) * 1987-12-01 1994-05-10 U.S. Philips Corporation Method of manufacturing a semiconductor device, in which photoresist on a silicon oxide layer on a semiconductor substrate is stripped using an oxygen plasma afterglow and a biased substrate
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5472508A (en) * 1991-08-09 1995-12-05 Saxena; Arjun N. Apparatus for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates
US5476182A (en) * 1992-09-08 1995-12-19 Tokyo Electron Limited Etching apparatus and method therefor
US5534231A (en) * 1990-01-04 1996-07-09 Mattson Technology, Inc. Low frequency inductive RF plasma reactor
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5673456A (en) * 1994-12-13 1997-10-07 Valeo Systemes D'essuyage Z.A. De L'agiot Windscreen wiper device for a motor vehicle provided with a covering shroud
US5881022A (en) * 1996-01-11 1999-03-09 Illinois Information Technology Corporation Frequency shifing device and method for automatic clock adjustment
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
US5942854A (en) * 1997-06-11 1999-08-24 Kawasaki Jukogyo Kabushiki Kaisha Electron-beam excited plasma generator with side orifices in the discharge chamber
US6029602A (en) * 1997-04-22 2000-02-29 Applied Materials, Inc. Apparatus and method for efficient and compact remote microwave plasma generation
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5811022A (en) 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
US4736087A (en) * 1987-01-12 1988-04-05 Olin Corporation Plasma stripper with multiple contact point cathode
US5310703A (en) * 1987-12-01 1994-05-10 U.S. Philips Corporation Method of manufacturing a semiconductor device, in which photoresist on a silicon oxide layer on a semiconductor substrate is stripped using an oxygen plasma afterglow and a biased substrate
US4996077A (en) * 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US5091049A (en) * 1989-06-13 1992-02-25 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5534231A (en) * 1990-01-04 1996-07-09 Mattson Technology, Inc. Low frequency inductive RF plasma reactor
US5114529A (en) * 1990-04-10 1992-05-19 International Business Machines Corporation Plasma processing method and apparatus
US5888414A (en) * 1991-06-27 1999-03-30 Applied Materials, Inc. Plasma reactor and processes using RF inductive coupling and scavenger temperature control
US5472508A (en) * 1991-08-09 1995-12-05 Saxena; Arjun N. Apparatus for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates
US5231334A (en) * 1992-04-15 1993-07-27 Texas Instruments Incorporated Plasma source and method of manufacturing
US5476182A (en) * 1992-09-08 1995-12-19 Tokyo Electron Limited Etching apparatus and method therefor
US5346578A (en) * 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5673456A (en) * 1994-12-13 1997-10-07 Valeo Systemes D'essuyage Z.A. De L'agiot Windscreen wiper device for a motor vehicle provided with a covering shroud
US5881022A (en) * 1996-01-11 1999-03-09 Illinois Information Technology Corporation Frequency shifing device and method for automatic clock adjustment
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
US6029602A (en) * 1997-04-22 2000-02-29 Applied Materials, Inc. Apparatus and method for efficient and compact remote microwave plasma generation
US5942854A (en) * 1997-06-11 1999-08-24 Kawasaki Jukogyo Kabushiki Kaisha Electron-beam excited plasma generator with side orifices in the discharge chamber
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020197402A1 (en) * 2000-12-06 2002-12-26 Chiang Tony P. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20040235299A1 (en) * 2003-05-22 2004-11-25 Axcelis Technologies, Inc. Plasma ashing apparatus and endpoint detection process
US20040238123A1 (en) * 2003-05-22 2004-12-02 Axcelis Technologies, Inc. Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US8580076B2 (en) * 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US20100055807A1 (en) * 2003-05-22 2010-03-04 Axcelis Technologies, Inc. Plasma ashing apparatus and endpoint detection process
US8268181B2 (en) 2003-05-22 2012-09-18 Axcelis Technologies, Inc. Plasma ashing apparatus and endpoint detection process
US20050221618A1 (en) * 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
US8187484B2 (en) * 2005-10-05 2012-05-29 Pva Tepla Ag Down-stream plasma etching with deflectable radical stream
US20090242514A1 (en) * 2005-10-05 2009-10-01 Jeff Alistair Hill Etch Process and Etching Chamber
US20120212136A1 (en) * 2009-08-27 2012-08-23 Mosaic Crystals Ltd. Penetrating plasma generating apparatus for high vacuum chambers
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US10032606B2 (en) 2012-08-02 2018-07-24 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US10354843B2 (en) 2012-09-21 2019-07-16 Applied Materials, Inc. Chemical control features in wafer process equipment
US9978564B2 (en) 2012-09-21 2018-05-22 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
TWI631614B (en) * 2013-09-16 2018-08-01 美商應用材料股份有限公司 Selective etching of silicon nitride
US8956980B1 (en) * 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10147620B2 (en) 2015-08-06 2018-12-04 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10224180B2 (en) 2016-10-04 2019-03-05 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10319603B2 (en) 2016-10-07 2019-06-11 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10186428B2 (en) 2016-11-11 2019-01-22 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10325923B2 (en) 2017-02-08 2019-06-18 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch

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