US20030109144A1 - Selectively etching silicon using fluorine without plasma - Google Patents

Selectively etching silicon using fluorine without plasma Download PDF

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Publication number
US20030109144A1
US20030109144A1 US10/329,205 US32920502A US2003109144A1 US 20030109144 A1 US20030109144 A1 US 20030109144A1 US 32920502 A US32920502 A US 32920502A US 2003109144 A1 US2003109144 A1 US 2003109144A1
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United States
Prior art keywords
silicon
gas mixture
molecular fluorine
workpiece
process according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/329,205
Inventor
Haruhiro Goto
William Harshbarger
Kam Law
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Priority to US09/535,420 priority Critical patent/US6500356B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US10/329,205 priority patent/US20030109144A1/en
Publication of US20030109144A1 publication Critical patent/US20030109144A1/en
Application status is Abandoned legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only

Abstract

A process for selectively etching silicon from a workpiece without etching silicon oxide or silicon nitride. The principal etchant gas is molecular fluorine gas (F2) that is not excited to a plasma state.

Description

    CROSS REFERENCE TO RELATED APPLICATION
  • This patent application is a continuation of application Ser. No. 09/535,420 filed Mar. 27, 2000.[0001]
  • FIELD OF THE INVENTION
  • The invention relates to processes for etching a silicon film on a workpiece. More specifically, the invention relates to processes for selectively etching silicon without etching silicon oxide or silicon nitride. [0002]
  • BACKGROUND OF THE INVENTION
  • Electronic devices containing silicon-based semiconductors, such as integrated circuits and flat panel displays, generally are fabricated by depositing many successive layers of silicon, metal and dielectric and patterning the layers to form various electronic circuitry components such as transistors, resistors, capacitor, and interconnect conductors. [0003]
  • The most commonly used dielectric materials are silicon oxide and silicon nitride. Silicon layers can function as semiconductors or conductors depending on their level of impurity doping. [0004]
  • To form the desired electronic component structures, it is necessary to etch a pattern in one layer of material without etching adjacent layers. However, most etch processes intended to selectively etch one specific material, such as silicon, unavoidably etch to some extent layers of other materials, such as silicon oxide or silicon nitride, that are adjacent to or underlying the layer that is intended to be etched. [0005]
  • Selective etch processes can be characterized by a selectivity ratio, which is the ratio between the amount of desired material removed to the amount of undesired material removed by the etch process per unit time. An etch process generally will have different selectivity ratios relative to different undesired materials. High selectivity is very difficult to achieve. [0006]
  • Therefore, a need exists for a process for selectively etching silicon without etching silicon oxide or silicon nitride. [0007]
  • SUMMARY OF THE INVENTION
  • The invention is a process for selectively etching silicon without etching silicon oxide or silicon nitride. The principal etchant gas is molecular fluorine gas (F[0008] 2) that is not excited to a plasma state.
  • I discovered that, when not decomposed in a plasma, molecular fluorine gas effectively etches silicon without etching silicon oxide or silicon nitride to any measurable extent. Therefore, a silicon etch process using molecular fluorine can achieve essentially infinite etch selectivity relative to silicon oxide and silicon nitride.[0009]
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • I tested the selectivity with which molecular fluorine would etch silicon without etching silicon oxide or silicon nitride. Instead of performing such tests using a substrate having multiple layers of silicon and dielectric, I attempted to etch three separate substrates on which these three respective films had been deposited. [0010]
  • Specifically, three 80×80 mm glass substrates were prepared by depositing three different films on the three substrates, namely, amorphous silicon, silicon oxide, and silicon nitride, respectively. The three substrates then were mounted on a susceptor within a conventional vacuum chamber. The susceptor was heated to 450° C. The substrate temperature was estimated to be about 65 degrees cooler than the susceptor, i.e., about 385° C. Molecular fluorine (F[0011] 2) gas was supplied to the chamber at a flow rate of 1000 sccm while an exhaust pump reduced the chamber pressure to about 260 millitorr (mT).
  • The result of this test was that the amorphous silicon was etched at a rate of 5000 Å/min. However, no etching of the silicon nitride or silicon oxide could be detected. Therefore, this etch process using molecular fluorine in the absence of a plasma demonstrated effective etching of silicon with essentially infinite selectivity against etching of silicon oxide and silicon nitride. [0012]
  • Other tests demonstrated the importance of not exciting the molecular fluorine to a plasma state. Plasma excitation was found to decompose a portion of the molecular fluorine into atomic fluorine that did etch the silicon oxide and silicon nitride dielectric materials, thereby making the etch process nonselective against these dielectric materials. [0013]
  • Although the silicon etch process was tested only at a substrate temperature of about 385° C. (a susceptor temperature of 450° C.), the temperature need not be that high. It is a matter of routine experimentation to determine the minimum temperature to which a substrate or workpiece must be elevated in order to cause the molecular fluorine gas to react with and remove a silicon layer exposed on the substrate. [0014]
  • Although the silicon etch process was tested with a reagent consisting of essentially 100% pure molecular fluorine gas, the process should perform similarly if the fluorine gas is mixed with a carrier gas. The carrier gas may be a mixture of one or more nonreactive gases, or it may be include any gases that are, in the absence of a plasma, nonreactive with the material (e.g., silicon oxide or silicon nitride) other than silicon against which the silicon etch process is desired to be selective. [0015]
  • Although the silicon etch process was tested only at a chamber pressure of 260 millitorr, the process is expected to also perform well at much higher chamber pressures, including atmospheric pressure (760 torr). [0016]
  • Even if the process is performed at atmospheric pressure, it is desirable to perform it within a sealed chamber such as a conventional vacuum chamber in order to protect the substrate or workpiece from contamination by substances in the ambient atmosphere. For example, it is important to exclude atmospheric hydrogen and water vapor from the chamber, because these substances would react with the fluorine reagent to produce hydrofluoric acid (HF), which is extremely corrosive and potentially hazardous. As another example, it may be important to exclude atmospheric oxygen and nitrogen from the chamber, because these substances may react to some extent with the silicon layer to be etched so as to form silicon oxide or silicon nitride that cannot be etched by the molecular fluorine. [0017]
  • Any type of sealed chamber or vacuum chamber should be suitable for performing the silicon etch process of the invention. The primary requirements are that the chamber components not release any substances that would contaminate the substrate or workpiece being etched, and that any chamber components in thermal contact with the substrate be capable of withstanding the temperature to which the substrate is heated. The vacuum chamber used in the test of the invention described above was a conventional, commercially available semiconductor fabrication process chamber intended primarily for performing etching and chemical vapor deposition (CVD) processes on large substrates or workpieces, especially the glass substrates used for fabricating thin film transistor (TFT) flat panel displays. [0018]
  • The design and operation of conventional vacuum chambers for semiconductor processing are described in the following commonly-assigned U.S. patents, the entire content of each of which is hereby incorporated by reference in this patent specification: U.S. Pat. No. 4,854,263 issued Aug. 8, 1989 to Chang et al.; U.S. Pat. No. 5,000,113 issued Mar. 19, 1991 to Wang et al.; U.S. Pat. No. 5,366,585 issued Nov. 22, 1994 to Robertson et al.; and U.S. Pat. No. 5,844,205 issued Dec. 1, 1998 to White et al. [0019]

Claims (7)

1. A process for selectively etching silicon from a workpiece without etching silicon oxide or silicon nitride, comprising the steps of:
mounting the workpiece within a chamber interior; and
supplying to the chamber interior a gas mixture including one or more gases while sealing the chamber interior to prevent any gas other than said gas mixture from entering the chamber interior, wherein
said one or more gases includes molecular fluorine, and
the molecular fluorine is not excited to a plasma state.
2. A process according to claim 1, further comprising the step of:
heating the workpiece sufficiently for the molecular fluorine to react with any exposed silicon on the workpiece.
3. A process according to claim 1, further comprising the steps of:
before the step of supplying the gas mixture, depositing silicon on the workpiece; and
during the step of supplying the gas mixture, elevating the temperature of the workpiece sufficiently for the molecular fluorine to react with the silicon.
4. A process according to claim 1, wherein the gas mixture consists essentially of molecular fluorine.
5. A process according to claim 1, wherein the gas mixture includes no substantial amount of any reactive gas other than molecular fluorine.
6. A process according to claim 1, wherein the gas mixture includes no substantial amount of any substance that reacts with silicon oxide in the absence of a plasma.
7. A process according to claim 1, wherein the gas mixture includes no substantial amount of any substance that reacts with silicon nitride in the absence of a plasma.
US10/329,205 2000-03-27 2002-12-24 Selectively etching silicon using fluorine without plasma Abandoned US20030109144A1 (en)

Priority Applications (2)

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US09/535,420 US6500356B2 (en) 2000-03-27 2000-03-27 Selectively etching silicon using fluorine without plasma
US10/329,205 US20030109144A1 (en) 2000-03-27 2002-12-24 Selectively etching silicon using fluorine without plasma

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US10/329,205 US20030109144A1 (en) 2000-03-27 2002-12-24 Selectively etching silicon using fluorine without plasma

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020074013A1 (en) * 2000-12-19 2002-06-20 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
US20030192569A1 (en) * 2000-03-27 2003-10-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6960305B2 (en) * 1999-10-26 2005-11-01 Reflectivity, Inc Methods for forming and releasing microelectromechanical structures
US6942811B2 (en) * 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
US7027200B2 (en) * 2002-03-22 2006-04-11 Reflectivity, Inc Etching method used in fabrications of microstructures
US7019376B2 (en) * 2000-08-11 2006-03-28 Reflectivity, Inc Micromirror array device with a small pitch size
US6500356B2 (en) * 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
US6980347B2 (en) * 2003-07-03 2005-12-27 Reflectivity, Inc Micromirror having reduced space between hinge and mirror plate of the micromirror
US6800210B2 (en) * 2001-05-22 2004-10-05 Reflectivity, Inc. Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants
WO2004026804A1 (en) 2002-09-20 2004-04-01 Integrated Dna Technologies, Inc. Anthraquinone quencher dyes, their methods of preparation and use
US6730600B2 (en) * 2002-09-27 2004-05-04 Agere Systems, Inc. Method of dry etching a semiconductor device in the absence of a plasma
WO2004033061A2 (en) * 2002-10-04 2004-04-22 The Regents Of The University Of California Fluorine separation and generation device
US7238266B2 (en) * 2002-12-06 2007-07-03 Mks Instruments, Inc. Method and apparatus for fluorine generation and recirculation
US6913942B2 (en) 2003-03-28 2005-07-05 Reflectvity, Inc Sacrificial layers for use in fabrications of microelectromechanical devices
US6849471B2 (en) * 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
US7645704B2 (en) * 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
WO2005103874A2 (en) * 2004-04-16 2005-11-03 Cascade Basic Research Corp. Modelling relationships within an on-line connectivity universe
US20060011139A1 (en) * 2004-07-16 2006-01-19 Applied Materials, Inc. Heated substrate support for chemical vapor deposition
US20060075970A1 (en) * 2004-10-13 2006-04-13 Guenther Rolf A Heated substrate support and method of fabricating same
US7192875B1 (en) 2004-10-29 2007-03-20 Lam Research Corporation Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens
US7226869B2 (en) * 2004-10-29 2007-06-05 Lam Research Corporation Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
US7291286B2 (en) * 2004-12-23 2007-11-06 Lam Research Corporation Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
US7429718B2 (en) * 2005-08-02 2008-09-30 Applied Materials, Inc. Heating and cooling of substrate support
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
TWI338947B (en) * 2007-07-05 2011-03-11 Ind Tech Res Inst Semiconductor device and method of fabricating the same
US9548224B2 (en) 2010-05-11 2017-01-17 Ultra High Vacuum Solutions Ltd. Method and apparatus to control surface texture modification of silicon wafers for photovoltaic cell devices
GB2486883A (en) * 2010-12-22 2012-07-04 Ultra High Vacuum Solutions Ltd Method and apparatus for surface texture modification of silicon wafers for photovoltaic cell devices
US9576815B2 (en) 2015-04-17 2017-02-21 Applied Materials, Inc. Gas-phase silicon nitride selective etch

Citations (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10354A (en) * 1853-12-20 Improvement in sewing-m ach
US19256A (en) * 1858-02-02 Improvement in tobacco-presses
US74013A (en) * 1868-02-04 Leyi scofield
US98038A (en) * 1869-12-21 Improved combination op piano-forte and cabinet
US121796A (en) * 1871-12-12 Improvement i-n portable fire-escapes
US2879212A (en) * 1954-12-24 1959-03-24 Ici Ltd Electrolytic fluorine manufacture
US3146179A (en) * 1961-04-05 1964-08-25 Ici Ltd Process for the electrolytic production of fluorine and apparatus therefor
US3684667A (en) * 1969-08-08 1972-08-15 Ian George Sayce Production of fluorine or volatile fluorine compounds using plasma jet anode
US3976447A (en) * 1973-04-26 1976-08-24 Pennwalt Corporation Removal of hydrogen fluoride from gaseous mixture by absorption on alkaline earth metal fluoride
US4125443A (en) * 1976-10-19 1978-11-14 British Nuclear Fuels Ltd. Electrolytic production of fluorine
US4176018A (en) * 1975-03-21 1979-11-27 Produits Chimiques Ugine Kuhlmann Electrolyte and process for electrolytic production of fluorine
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US4786361A (en) * 1986-03-05 1988-11-22 Kabushiki Kaisha Toshiba Dry etching process
US4818326A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Processing apparatus
US4854263A (en) * 1987-08-14 1989-08-08 Applied Materials, Inc. Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US4867841A (en) * 1987-07-16 1989-09-19 Texas Instruments Incorporated Method for etch of polysilicon film
US4900395A (en) * 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5002632A (en) * 1989-11-22 1991-03-26 Texas Instruments Incorporated Method and apparatus for etching semiconductor materials
US5129958A (en) * 1989-09-22 1992-07-14 Applied Materials, Inc. Cleaning method for semiconductor wafer processing apparatus
US5180466A (en) * 1984-12-29 1993-01-19 Fujitsu Limited Process for dry etching a silicon nitride layer
US5207836A (en) * 1989-08-25 1993-05-04 Applied Materials, Inc. Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
US5284605A (en) * 1991-03-27 1994-02-08 Comurhex Society Pour La Conversion Method of treating gas based on electrolytic fluorine containing uranium compounds
US5298112A (en) * 1987-08-28 1994-03-29 Kabushiki Kaisha Toshiba Method for removing composite attached to material by dry etching
US5302236A (en) * 1990-10-19 1994-04-12 Tokyo Electron Limited Method of etching object to be processed including oxide or nitride portion
US5336832A (en) * 1992-11-06 1994-08-09 Conoco Inc. Recovery of HF from hydrocarbon streams
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5378324A (en) * 1992-04-04 1995-01-03 British Nuclear Fuels Plc Process and an electrolytic cell for the production of fluorine
US5405491A (en) * 1994-03-04 1995-04-11 Motorola Inc. Plasma etching process
US5406008A (en) * 1989-12-28 1995-04-11 E. I. Du Pont De Nemours And Company Process for the manufacture of hydrofluorocarbons
US5428842A (en) * 1992-11-20 1995-07-04 Wise; Herbert H. Hat made of unitary sheet of cardboard or the like
US5449411A (en) * 1992-10-20 1995-09-12 Hitachi, Ltd. Microwave plasma processing apparatus
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US5549802A (en) * 1993-05-17 1996-08-27 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
US5565038A (en) * 1991-05-16 1996-10-15 Intel Corporation Interhalogen cleaning of process equipment
US5569151A (en) * 1995-05-08 1996-10-29 Air Products And Chemicals, Inc. Handling and delivery system for dangerous gases
US5597495A (en) * 1994-11-07 1997-01-28 Keil; Mark Method and apparatus for etching surfaces with atomic fluorine
US5620526A (en) * 1993-09-10 1997-04-15 Fujitsu Limited In-situ cleaning of plasma treatment chamber
US5628894A (en) * 1995-10-17 1997-05-13 Florida Scientific Laboratories, Inc. Nitrogen trifluoride process
US5679215A (en) * 1996-01-02 1997-10-21 Lam Research Corporation Method of in situ cleaning a vacuum plasma processing chamber
US5685916A (en) * 1993-08-09 1997-11-11 Applied Materials, Inc. Dry cleaning of semiconductor processing chambers
US5688384A (en) * 1994-09-14 1997-11-18 British Nuclear Fuels Plc Fluorine cell
US5693147A (en) * 1995-11-03 1997-12-02 Motorola, Inc. Method for cleaning a process chamber
US5705080A (en) * 1994-07-06 1998-01-06 Applied Materials, Inc. Plasma-inert cover and plasma cleaning process
US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5762813A (en) * 1995-03-14 1998-06-09 Nippon Steel Corporation Method for fabricating semiconductor device
US5770098A (en) * 1993-03-19 1998-06-23 Tokyo Electron Kabushiki Kaisha Etching process
US5779866A (en) * 1996-11-26 1998-07-14 Florida Scientific Laboratories Inc. Electrolyzer
US5788778A (en) * 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US5824607A (en) * 1997-02-06 1998-10-20 Applied Materials, Inc. Plasma confinement for an inductively coupled plasma reactor
US5830807A (en) * 1994-03-18 1998-11-03 Fujitsu Limited Successive dry etching of alternating laminate
US5844205A (en) * 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
US5844195A (en) * 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source
US5846886A (en) * 1996-03-01 1998-12-08 Kabushiki Kaisha Toshiba Metal film etching method
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
US5849639A (en) * 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
US5872061A (en) * 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers
US5880031A (en) * 1992-06-25 1999-03-09 Texas Instruments Incorporated Method for vapor phase wafer cleaning
US5880032A (en) * 1995-07-31 1999-03-09 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing a semiconductor device
US5888309A (en) * 1997-12-29 1999-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma
US5904566A (en) * 1997-06-09 1999-05-18 Taiwan Semiconductor Manufacturing Company, Ltd. Reactive ion etch method for forming vias through nitrogenated silicon oxide layers
US5922219A (en) * 1996-10-31 1999-07-13 Fsi International, Inc. UV/halogen treatment for dry oxide etching
US5935874A (en) * 1998-03-31 1999-08-10 Lam Research Corporation Techniques for forming trenches in a silicon layer of a substrate in a high density plasma processing system
US5958801A (en) * 1989-07-20 1999-09-28 Micron Technology, Inc. Anisotropic etch method
US5970376A (en) * 1997-12-29 1999-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Post via etch plasma treatment method for forming with attenuated lateral etching a residue free via through a silsesquioxane spin-on-glass (SOG) dielectric layer
US5980769A (en) * 1996-11-18 1999-11-09 Speedfam Co., Ltd. Plasma etching method
US6007733A (en) * 1998-05-29 1999-12-28 Taiwan Semiconductor Manufacturing Company Hard masking method for forming oxygen containing plasma etchable layer
US6014979A (en) * 1998-06-22 2000-01-18 Applied Materials, Inc. Localizing cleaning plasma for semiconductor processing
US6015761A (en) * 1996-06-26 2000-01-18 Applied Materials, Inc. Microwave-activated etching of dielectric layers
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US6024887A (en) * 1997-06-03 2000-02-15 Taiwan Semiconductor Manufacturing Company Plasma method for stripping ion implanted photoresist layers
US6024888A (en) * 1992-12-08 2000-02-15 Nec Corporation Vapor selective etching method and apparatus
US6029718A (en) * 1997-07-11 2000-02-29 Advanced Delivery & Chemical Systems, Ltd. Chemical delivery system employing containment crate
US6051505A (en) * 1998-03-05 2000-04-18 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layers
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US6077451A (en) * 1996-03-28 2000-06-20 Kabushiki Kaisha Toshiba Method and apparatus for etching of silicon materials
US6109206A (en) * 1997-05-29 2000-08-29 Applied Materials, Inc. Remote plasma source for chamber cleaning
US6117793A (en) * 1998-09-03 2000-09-12 Micron Technology, Inc. Using silicide cap as an etch stop for multilayer metal process and structures so formed
US6125859A (en) * 1997-03-05 2000-10-03 Applied Materials, Inc. Method for improved cleaning of substrate processing systems
US6159333A (en) * 1998-10-08 2000-12-12 Applied Materials, Inc. Substrate processing system configurable for deposition or cleaning
US6209483B1 (en) * 1996-10-17 2001-04-03 Accord S. E. G. Apparatus and method for removing silicon dioxide residues from CVD reactors
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
US6264852B1 (en) * 1996-04-25 2001-07-24 Applied Materials, Inc. Substrate process chamber and processing method
US6271148B1 (en) * 1997-04-23 2001-08-07 Applied Materials, Inc. Method for improved remote microwave plasma source for use with substrate processing system
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6362031B1 (en) * 1997-01-27 2002-03-26 Advanced Display Inc. Semiconductor TFT, producing method thereof, semiconductor TFT array substrate and liquid crystal display using the same
US6366346B1 (en) * 1998-11-19 2002-04-02 Applied Materials, Inc. Method and apparatus for optical detection of effluent composition
US6366366B1 (en) * 1997-08-22 2002-04-02 Fuji Photo Film Co., Ltd. Image reading method and apparatus
US6374831B1 (en) * 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6387288B1 (en) * 1998-02-09 2002-05-14 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US6500356B2 (en) * 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma
US6544345B1 (en) * 1999-07-12 2003-04-08 Asml Us, Inc. Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries
US6602433B1 (en) * 1999-03-04 2003-08-05 Surface Technology Systems Plc Gas delivery system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5425842A (en) 1992-06-09 1995-06-20 U.S. Philips Corporation Method of manufacturing a semiconductor device using a chemical vapour deposition process with plasma cleaning of the reactor chamber

Patent Citations (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10354A (en) * 1853-12-20 Improvement in sewing-m ach
US19256A (en) * 1858-02-02 Improvement in tobacco-presses
US74013A (en) * 1868-02-04 Leyi scofield
US98038A (en) * 1869-12-21 Improved combination op piano-forte and cabinet
US121796A (en) * 1871-12-12 Improvement i-n portable fire-escapes
US2879212A (en) * 1954-12-24 1959-03-24 Ici Ltd Electrolytic fluorine manufacture
US3146179A (en) * 1961-04-05 1964-08-25 Ici Ltd Process for the electrolytic production of fluorine and apparatus therefor
US3684667A (en) * 1969-08-08 1972-08-15 Ian George Sayce Production of fluorine or volatile fluorine compounds using plasma jet anode
US3976447A (en) * 1973-04-26 1976-08-24 Pennwalt Corporation Removal of hydrogen fluoride from gaseous mixture by absorption on alkaline earth metal fluoride
US4176018A (en) * 1975-03-21 1979-11-27 Produits Chimiques Ugine Kuhlmann Electrolyte and process for electrolytic production of fluorine
US4125443A (en) * 1976-10-19 1978-11-14 British Nuclear Fuels Ltd. Electrolytic production of fluorine
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US5180466A (en) * 1984-12-29 1993-01-19 Fujitsu Limited Process for dry etching a silicon nitride layer
US4786361A (en) * 1986-03-05 1988-11-22 Kabushiki Kaisha Toshiba Dry etching process
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4818326A (en) * 1987-07-16 1989-04-04 Texas Instruments Incorporated Processing apparatus
US4867841A (en) * 1987-07-16 1989-09-19 Texas Instruments Incorporated Method for etch of polysilicon film
US4854263A (en) * 1987-08-14 1989-08-08 Applied Materials, Inc. Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US4854263B1 (en) * 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US5298112A (en) * 1987-08-28 1994-03-29 Kabushiki Kaisha Toshiba Method for removing composite attached to material by dry etching
US4900395A (en) * 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US5958801A (en) * 1989-07-20 1999-09-28 Micron Technology, Inc. Anisotropic etch method
US5207836A (en) * 1989-08-25 1993-05-04 Applied Materials, Inc. Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
US5129958A (en) * 1989-09-22 1992-07-14 Applied Materials, Inc. Cleaning method for semiconductor wafer processing apparatus
US5002632A (en) * 1989-11-22 1991-03-26 Texas Instruments Incorporated Method and apparatus for etching semiconductor materials
US5406008A (en) * 1989-12-28 1995-04-11 E. I. Du Pont De Nemours And Company Process for the manufacture of hydrofluorocarbons
US5302236A (en) * 1990-10-19 1994-04-12 Tokyo Electron Limited Method of etching object to be processed including oxide or nitride portion
US5284605A (en) * 1991-03-27 1994-02-08 Comurhex Society Pour La Conversion Method of treating gas based on electrolytic fluorine containing uranium compounds
US5565038A (en) * 1991-05-16 1996-10-15 Intel Corporation Interhalogen cleaning of process equipment
US5378324A (en) * 1992-04-04 1995-01-03 British Nuclear Fuels Plc Process and an electrolytic cell for the production of fluorine
US5880031A (en) * 1992-06-25 1999-03-09 Texas Instruments Incorporated Method for vapor phase wafer cleaning
US5449411A (en) * 1992-10-20 1995-09-12 Hitachi, Ltd. Microwave plasma processing apparatus
US5336832A (en) * 1992-11-06 1994-08-09 Conoco Inc. Recovery of HF from hydrocarbon streams
US5428842A (en) * 1992-11-20 1995-07-04 Wise; Herbert H. Hat made of unitary sheet of cardboard or the like
US6024888A (en) * 1992-12-08 2000-02-15 Nec Corporation Vapor selective etching method and apparatus
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5770098A (en) * 1993-03-19 1998-06-23 Tokyo Electron Kabushiki Kaisha Etching process
US5549802A (en) * 1993-05-17 1996-08-27 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
US5685916A (en) * 1993-08-09 1997-11-11 Applied Materials, Inc. Dry cleaning of semiconductor processing chambers
US5620526A (en) * 1993-09-10 1997-04-15 Fujitsu Limited In-situ cleaning of plasma treatment chamber
US5405491A (en) * 1994-03-04 1995-04-11 Motorola Inc. Plasma etching process
US5830807A (en) * 1994-03-18 1998-11-03 Fujitsu Limited Successive dry etching of alternating laminate
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US5705080A (en) * 1994-07-06 1998-01-06 Applied Materials, Inc. Plasma-inert cover and plasma cleaning process
US5688384A (en) * 1994-09-14 1997-11-18 British Nuclear Fuels Plc Fluorine cell
US5597495A (en) * 1994-11-07 1997-01-28 Keil; Mark Method and apparatus for etching surfaces with atomic fluorine
US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
US5762813A (en) * 1995-03-14 1998-06-09 Nippon Steel Corporation Method for fabricating semiconductor device
US5569151A (en) * 1995-05-08 1996-10-29 Air Products And Chemicals, Inc. Handling and delivery system for dangerous gases
US5880032A (en) * 1995-07-31 1999-03-09 Kabushiki Kaisha Toshiba Method and apparatus for manufacturing a semiconductor device
US5628894A (en) * 1995-10-17 1997-05-13 Florida Scientific Laboratories, Inc. Nitrogen trifluoride process
US5693147A (en) * 1995-11-03 1997-12-02 Motorola, Inc. Method for cleaning a process chamber
US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5679215A (en) * 1996-01-02 1997-10-21 Lam Research Corporation Method of in situ cleaning a vacuum plasma processing chamber
US5846886A (en) * 1996-03-01 1998-12-08 Kabushiki Kaisha Toshiba Metal film etching method
US6077451A (en) * 1996-03-28 2000-06-20 Kabushiki Kaisha Toshiba Method and apparatus for etching of silicon materials
US5844205A (en) * 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
US6264852B1 (en) * 1996-04-25 2001-07-24 Applied Materials, Inc. Substrate process chamber and processing method
US5788799A (en) * 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6015761A (en) * 1996-06-26 2000-01-18 Applied Materials, Inc. Microwave-activated etching of dielectric layers
US5788778A (en) * 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
US6209483B1 (en) * 1996-10-17 2001-04-03 Accord S. E. G. Apparatus and method for removing silicon dioxide residues from CVD reactors
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US5922219A (en) * 1996-10-31 1999-07-13 Fsi International, Inc. UV/halogen treatment for dry oxide etching
US5844195A (en) * 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source
US5980769A (en) * 1996-11-18 1999-11-09 Speedfam Co., Ltd. Plasma etching method
US5779866A (en) * 1996-11-26 1998-07-14 Florida Scientific Laboratories Inc. Electrolyzer
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US6362031B1 (en) * 1997-01-27 2002-03-26 Advanced Display Inc. Semiconductor TFT, producing method thereof, semiconductor TFT array substrate and liquid crystal display using the same
US5824607A (en) * 1997-02-06 1998-10-20 Applied Materials, Inc. Plasma confinement for an inductively coupled plasma reactor
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
US6125859A (en) * 1997-03-05 2000-10-03 Applied Materials, Inc. Method for improved cleaning of substrate processing systems
US6271148B1 (en) * 1997-04-23 2001-08-07 Applied Materials, Inc. Method for improved remote microwave plasma source for use with substrate processing system
US6109206A (en) * 1997-05-29 2000-08-29 Applied Materials, Inc. Remote plasma source for chamber cleaning
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US6024887A (en) * 1997-06-03 2000-02-15 Taiwan Semiconductor Manufacturing Company Plasma method for stripping ion implanted photoresist layers
US5904566A (en) * 1997-06-09 1999-05-18 Taiwan Semiconductor Manufacturing Company, Ltd. Reactive ion etch method for forming vias through nitrogenated silicon oxide layers
US6029718A (en) * 1997-07-11 2000-02-29 Advanced Delivery & Chemical Systems, Ltd. Chemical delivery system employing containment crate
US6366366B1 (en) * 1997-08-22 2002-04-02 Fuji Photo Film Co., Ltd. Image reading method and apparatus
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US5872061A (en) * 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers
US5849639A (en) * 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
US5970376A (en) * 1997-12-29 1999-10-19 Taiwan Semiconductor Manufacturing Company, Ltd. Post via etch plasma treatment method for forming with attenuated lateral etching a residue free via through a silsesquioxane spin-on-glass (SOG) dielectric layer
US5888309A (en) * 1997-12-29 1999-03-30 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma
US6387288B1 (en) * 1998-02-09 2002-05-14 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US6051505A (en) * 1998-03-05 2000-04-18 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layers
US5935874A (en) * 1998-03-31 1999-08-10 Lam Research Corporation Techniques for forming trenches in a silicon layer of a substrate in a high density plasma processing system
US6007733A (en) * 1998-05-29 1999-12-28 Taiwan Semiconductor Manufacturing Company Hard masking method for forming oxygen containing plasma etchable layer
US6014979A (en) * 1998-06-22 2000-01-18 Applied Materials, Inc. Localizing cleaning plasma for semiconductor processing
US6117793A (en) * 1998-09-03 2000-09-12 Micron Technology, Inc. Using silicide cap as an etch stop for multilayer metal process and structures so formed
US6159333A (en) * 1998-10-08 2000-12-12 Applied Materials, Inc. Substrate processing system configurable for deposition or cleaning
US6366346B1 (en) * 1998-11-19 2002-04-02 Applied Materials, Inc. Method and apparatus for optical detection of effluent composition
US6374831B1 (en) * 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6602433B1 (en) * 1999-03-04 2003-08-05 Surface Technology Systems Plc Gas delivery system
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6544345B1 (en) * 1999-07-12 2003-04-08 Asml Us, Inc. Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
US6500356B2 (en) * 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030192569A1 (en) * 2000-03-27 2003-10-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
US6880561B2 (en) 2000-03-27 2005-04-19 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
US20020074013A1 (en) * 2000-12-19 2002-06-20 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
US20040216768A1 (en) * 2000-12-19 2004-11-04 Quanyuan Shang On-site cleaning gas generation for process chamber cleaning
US6843258B2 (en) 2000-12-19 2005-01-18 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
US6981508B2 (en) 2000-12-19 2006-01-03 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean

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