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Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application

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US20030082307A1
US20030082307A1 US10193333 US19333302A US2003082307A1 US 20030082307 A1 US20030082307 A1 US 20030082307A1 US 10193333 US10193333 US 10193333 US 19333302 A US19333302 A US 19333302A US 2003082307 A1 US2003082307 A1 US 2003082307A1
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layer
metal
compound
containing
seed
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Hua Chung
Ling Chen
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Applied Materials Inc
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Applied Materials Inc
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562Selective deposition
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    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34Nitrides
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45525Atomic layer deposition [ALD]
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
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Abstract

A method for forming a metal interconnect on a substrate is provided. The method includes depositing a refractory metal-containing barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound. The method also includes depositing a seed layer on at least a portion of the barrier layer, and depositing a second metal layer on at least a portion of the seed layer. The barrier layer provides adequate barrier properties and allows the grain growth of the metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • [0001]
    This application claims benefit of U.S. Provisional Patent Application Serial No. 60/346,086, filed on Oct. 26, 2001, and entitled “Method and Apparatus for ALD Deposition”, which is incorporated by reference herein. This application also claims benefit of U.S. patent application Ser. No. 09/965,370, filed on Sep. 26, 2001, and entitled “Integration of Barrier Layer and Seed Layer”, which is incorporated by reference herein. This application also claims benefit of U.S. patent application Ser. No. 09/965,373, filed on Sep. 26, 2001, and entitled “Integration of Barrier Layer and Seed Layer”, which is incorporated by reference herein. This application also claims benefit of U.S. patent application Ser. No. 09/965,369, filed on Sep. 26, 2001, and entitled “Integration of Barrier Layer and Seed Layer”, which is incorporated by reference herein.
  • BACKGROUND OF THE INVENTION
  • [0002]
    1. Field of the Invention
  • [0003]
    Embodiments of the present invention relate to a method for manufacturing integrated circuit devices. More particularly, embodiments of the invention relate to forming metal interconnect structures using one or more cyclical deposition processes.
  • [0004]
    2. Description of the Related Art
  • [0005]
    As the structure size of integrated circuit (IC) devices is scaled down to sub-quarter micron dimensions, electrical resistance and current densities have become an area for concern and improvement. Multilevel interconnect technology provides the conductive paths throughout an IC device, and are formed in high aspect ratio features, including contacts, plugs, vias, lines, wires, and other features. A typical process for forming an interconnect on a substrate includes depositing one or more layers, etching at least one of the layer(s) to form one or more features, depositing a barrier layer in the feature(s) and depositing one or more layers to fill the feature. Typically, a feature is formed within a dielectric material disposed between a lower conductive layer and an upper conductive layer. The interconnect is formed within the feature to link the upper and lower conductive layers. Reliable formation of these interconnect features is important to the production of the circuits and continued effort to increase circuit density and quality on individual substrates and die.
  • [0006]
    Copper has recently become a choice metal for filling sub-micron high aspect ratio, interconnect features because copper and its alloys have lower resistivities than aluminum. However, copper diffuses more readily into surrounding materials and can alter the electronic device characteristics of the adjacent layers and, for example, form a conductive path between layers, thereby reducing the reliability of the overall circuit and may even result in device failure.
  • [0007]
    Barrier layers therefore, are deposited prior to copper metallization to prevent or impede the diffusion of copper atoms. Barrier layers typically contain of a refractory metal such as tungsten, titanium, tantalum, and nitrides thereof, which all have a greater resistivity than copper. To deposit a barrier layer within a feature, the barrier layer must be deposited on the bottom of the feature as well as the sidewalls thereof. Therefore, the additional amount of the barrier layer on the bottom of the feature not only increases the overall resistance of the feature, but also forms an obstruction between higher and lower metal interconnects of a multi-layered interconnect structure.
  • [0008]
    There is a need, therefore, for an improved method for forming metal interconnect structures which minimizes the electrical resistance of the interconnect.
  • SUMMARY OF THE INVENTION
  • [0009]
    A method for forming a metal interconnect on a substrate is provided. In one aspect, the method includes a refractory metal containing a barrier layer having a thickness that exhibits a crystalline like structure and is sufficient to inhibit atomic migration over at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound; depositing a seed layer on at least a portion of the barrier layer; and depositing a second metal layer on at least a portion of the seed layer.
  • [0010]
    In another aspect, the method includes depositing a tantalum nitride barrier layer having a thickness less than about 20 angstroms over at least a portion of a metal layer by alternately introducing one or more pulses of a tantalum-containing compound and one or more pulses of a nitrogen-containing compound; depositing an alloy seed layer on the barrier layer; and depositing a second metal layer. The alloy seed layer may contain a dual alloy such as copper and a metal selected from the group consisting of aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second metal layer may be formed using physical vapor deposition (CVD), physical vapor deposition (PVD), electroplating, or electroless techniques.
  • [0011]
    In still another aspect, the method includes depositing a titanium silicon nitride layer having a thickness less than about 20 angstroms over at least a portion of a metal layer by alternately introducing one or more pulses of a titanium-containing compound, one or more pulses of a silicon-containing compound, and one or more pulses of a nitrogen-containing compound; depositing a dual alloy seed layer; and depositing a second metal layer on the seed layer.
  • [0012]
    In still another aspect, the method includes depositing a tantalum silicon nitride layer having a thickness less than about 20 angstroms over at least a portion of the first metal layer by alternately introducing one or more pulses of a tantalum-containing compound, one or more pulses of a silicon-containing compound, and one or more pulses of a nitrogen-containing compound; depositing a dual alloy seed layer; and depositing a second metal layer on the seed layer.
  • [0013]
    In yet another aspect, the method includes depositing a bilayer barrier having a thickness less than about 20 angstroms over at least a portion of the first metal layer. The bilayer barrier includes a first layer of tantalum nitride deposited by alternately introducing one or more pulses of a tantalum-containing compound and one or more pulses of a nitrogen-containing compound; and a second layer of alpha phase tantalum. The method further includes depositing a dual alloy seed layer and a second metal layer on the seed layer.
  • [0014]
    In another aspect, the method includes depositing a tantalum nitride barrier layer having a thickness less than about 20 angstroms over at least a portion of the first metal layer by alternately introducing one or more pulses of a tantalum-containing compound and one or more pulses of a nitrogen-containing compound; depositing a dual alloy seed layer comprising copper and a metal selected from the group consisting of aluminum, magnesium, titanium, zirconium, tin, and combinations thereof; and depositing a second metal layer on the seed layer by physical vapor deposition (CVD), physical vapor deposition (PVD), electroplating, or electroless techniques.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0015]
    So that the manner in which the above recited features of the present invention are attained and can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings.
  • [0016]
    It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
  • [0017]
    [0017]FIG. 1 illustrates processing sequences according to various embodiments of the invention described herein.
  • [0018]
    FIGS. 2A-2D are schematic cross section views of an exemplary wafer at different stages of an interconnect fabrication sequence according to embodiments described herein.
  • [0019]
    [0019]FIG. 3 illustrates a schematic, partial cross section of an exemplary processing chamber 200 for forming a thin barrier layer according to a cyclical deposition technique described herein.
  • [0020]
    [0020]FIG. 4 illustrates a schematic plan view of an exemplary integrated cluster tool adaptable to perform the interconnect fabrication sequence described herein.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • [0021]
    A process sequence for forming one or more interconnect structures is provided. Interconnect structures formed according to embodiments described herein have an overall lower resistivity and better electrical properties than interconnects of the prior art, and are particularly useful for making memory and logic structures for use with the fabrication of integrated circuits. The formation of the interconnect structures includes the formation of a thin barrier layer at least partially deposited on an underlying metal layer, a seed layer at least partially deposited on the barrier layer, and a bulk metal layer at least partially deposited on the seed layer. The term “interconnect” as used herein refers to any conductive path formed within an integrated circuit. The term “bulk” as used herein refers to a greater amount of material deposited in relation to other materials deposited to form the interconnect structure.
  • [0022]
    [0022]FIG. 1 illustrates the process sequence according to embodiments of the invention. A thin barrier layer is first deposited at least partially on an underlying substrate surface, such as a lower level metal interconnect or a metal gate, for example, as shown at step 480. The barrier layer is deposited according to a cyclical layer deposition technique described herein to provide excellent barrier properties and permit the continuous growth of the underlying metal layer across the barrier layer, into an upper level metal interconnect or subsequently deposited metal layer. In one aspect, the barrier layer is a refractory metal-containing layer, such as tantalum, titanium, and tungsten, for example, and may include a refractory metal nitride material, such as tantalum nitride (TaN). In another aspect, the barrier layer is a thin bi-layer of TaN and alpha-phase tantalum. In yet another aspect, the barrier layer may be a ternary material formed from a refractory metal containing compound, a silicon-containing compound and a nitrogen-containing compound. The barrier layer may also act as a wetting layer, adhesion layer, or glue layer for subsequent metallization.
  • [0023]
    A “thin layer” as used herein refers to a layer of material deposited on a substrate surface having a thickness of about 20 angstroms (Å) or less, such as about 10 Å. The thickness of the barrier layer is so small/thin that electrons of the adjacent metal interconnects can tunnel through the barrier layer. Accordingly, the barrier layer significantly enhances the metal interconnect electrical performance by lowering the overall electrical resistance and providing good device reliability.
  • [0024]
    The thin barrier layer deposited according to the cyclical deposition methods described herein shows evidence of an epitaxial growth phenomenon. In other words, the barrier layer takes on the same or substantially the same crystallographic characteristics as the underlying layer. As a result, a substantially single crystal is grown such that there is no void formation at an interface between the barrier layer and the underlying layer. Likewise, subsequent metal layers deposited over the barrier layer exhibit the same or substantially the same epitaxial growth characteristics that continue the formation of the single crystal. Accordingly, no void formation is produced at this interface. The resulting structure resembling a single crystal eliminates voids formation, thereby substantially increasing device reliability. The single crystal structure also reduces the overall resistance of the interconnect feature while still providing excellent barrier properties. Furthermore, it is believed that the single crystalline growth reduces the susceptibility of electromigration and stress migration due to the conformal and uniform crystalline orientation across the interconnect material interfaces.
  • [0025]
    “Cyclical deposition” as used herein refers to the sequential introduction of two or more compounds to deposit a thin layer on a substrate surface. The two or more compounds are sequentially introduced into a reaction zone of a processing chamber. Each compound is separated by a time delay/pause to allow each compound to adhere and/or react on the substrate surface. In one aspect, a first compound or compound A is dosed/pulsed into the reaction zone followed by a first time delay/pause. Next, a second compound or compound B is dosed/pulsed into the reaction zone followed by a second time delay. When a ternary material is desired, such as titanium silicon nitride, for example, a third compound (C), is dosed/pulsed into the reaction zone followed by a third time delay. These sequential tandems of a pulse of reactive compound followed by a time delay may be repeated indefinitely until a desired film or film thickness is formed on the substrate surface.
  • [0026]
    A “pulse/dose” as used herein is intended to refer to a quantity of a particular compound that is intermittently or non-continuously introduced into a reaction zone of a processing chamber. The quantity of a particular compound within each pulse may vary over time, depending on the duration of the pulse. A particular compound may include a single compound or a mixture/combination of two or more compounds.
  • [0027]
    A “compound” is intended to include one or more precursors, reductants, reactants, and catalysts. Each compound may be a single compound or a mixture/combination of two or more compounds.
  • [0028]
    Still referring to FIG. 1, a seed layer is at least partially deposited on the barrier layer, as shown at step 485. The seed layer may be deposited using any conventional deposition technique, such as chemical vapor deposition (CVD), physical vapor deposition (PVD), electroplating, or electroless plating. Preferably, the seed layer is deposited conformally on the underlying barrier layer to have a thickness between about 100 Å and about 500 Å. In one aspect, the seed layer is a conventional copper seed layer. In another aspect, the seed layer is a dual alloy seed layer. Exemplary dual alloy seed layers include: 1) undoped copper deposited utilizing a target containing undoped copper, 2) a copper alloy containing aluminum in a concentration of about 2.0 atomic percent deposited utilizing a copper-aluminum target comprising aluminum in a concentration of about 2.0 atomic percent, 3) a copper alloy containing tin in a concentration of about 2.0 atomic percent deposited utilizing a copper-tin target comprising tin in a concentration of about 2.0 atomic percent, and 4) a copper alloy containing zirconium in a concentration of about 2.0 atomic percent deposited utilizing a copper-zirconium target comprising zirconium in a concentration of about 2.0 atomic percent.
  • [0029]
    The bulk metal layer is at least partially deposited on the seed layer, as shown at step 487. The metal layer may also be deposited using any conventional deposition technique, such as chemical vapor deposition (CVD), physical vapor deposition (PVD), electroplating, or electroless plating. The metal layer preferably includes any conductive material such as aluminum, copper, tungsten, or combinations thereof, for example.
  • [0030]
    FIGS. 2A-2D are schematic representations of an exemplary interconnect structure at different stages of fabrication. FIG. 2A shows an underlying metal layer 110 having a dielectric layer 112 formed thereon. FIG. 2B shows a barrier layer 130 at least partially deposited on the underlying metal layer 110. The underlying metal layer 110 may contain any conductive metal such as aluminum, copper, tungsten, or combinations thereof, for example, and may form part of an interconnect feature such as a plug, via, contact, line, wire, and may also be part of a metal gate electrode. FIG. 2C shows a seed layer 140 at least partially deposited on the barrier layer 130, and FIG. 2D shows a bulk metal layer 142 at least partially deposited on the seed layer 140.
  • [0031]
    Referring to FIG. 2A, the dielectric layer 112 may be any dielectric material including a low k dielectric material (k≦4.0), whether presently known or yet to be discovered. For example, the dielectric layer 112 may be a silicon oxide or a carbon doped silicon oxide, for example. The dielectric layer 112 has been etched to form a feature 114 therein using conventional and well-known techniques. The feature 114 may be a plug, via, contact, line, wire, or any other interconnect component. Typically, the feature 114 has vertical sidewalls 116 and a floor 118, having an aspect ratio of about 4:1 or greater, such as about 6:1. The floor 118 exposes at least a portion of the lower level metal interconnect 110.
  • [0032]
    Referring to FIG. 2B, the barrier layer 130 is conformally deposited on the floor 118 as well as the side walls 116 of the feature 114. Preferably, the barrier layer contains tantalum nitride deposited to a thickness of about 20 Å or less, preferably about 10 Å, by providing one or more pulses of a tantalum-containing compound at a flow rate between about 100 sccm and about 1,000 sccm for a time period of about 1.0 second or less and one or more pulses of a nitrogen-containing compound at a flow rate between about 100 sccm and about 1,000 sccm for a time period of about 1.0 second or less to a reaction zone having a substrate disposed therein. Exemplary tantalum-containing compounds include: t-butylimino tris(diethylamino) tantalum (TBTDET); pentakis (ethylmethylamino); tantalum (PEMAT); pentakis (dimethylamino) tantalum (PDMAT); pentakis (diethylamino) tantalum (PDEAT); t-butylimino tris(diethyl methylamino) tantalum(TBTMET); t-butylimino tris(dimethyl amino) tantalum (TBTDMT); bis(cyclopentadienyl) tantalum trihydride ((Cp)2TaH3); bis(methylcyclopentadienyl) tantalum trihydride ((CpMe)2TaH3); derivatives thereof; and combinations thereof. Exemplary nitrogen-containing compounds include: ammonia; hydrazine; methylhydrazine; dimethylhydrazine; t-butylhydrazine; phenylhydrazine; azoisobutane; ethylazide; derivatives thereof; and combinations thereof.
  • [0033]
    It is to be understood that these compounds or any other compound not listed above may be a solid, liquid, or gas at room temperature. For example, PDMAT is a solid at room temperature and TBTDET is a liquid at room temperature. Accordingly, the non-gas phase precursors are subjected to a sublimation or vaporization step, which are both well known in the art, prior to introduction into the processing chamber. A carrier gas, such as argon, helium, nitrogen, hydrogen, or a mixture thereof, may also be used to help deliver the compound into the processing chamber, as is commonly known in the art.
  • [0034]
    Each pulse is performed sequentially, and is accompanied by a separate flow of non-reactive gas at a rate between about 200 sccm and about 1,000 sccm. The separate flow of non-reactive gas may be pulsed between each pulse of the reactive compounds or the separate flow of non-reactive gas may be introduced continuously throughout the deposition process. The separate flow of non-reactive gas, whether pulsed or continuous, serves to remove any excess reactants from the reaction zone to prevent unwanted gas phase reactions of the reactive compounds, and also serves to remove any reaction by-products from the processing chamber, similar to a purge gas. In addition to these services, the continuous separate flow of non-reactive gas helps deliver the pulses of reactive compounds to the substrate surface similar to a carrier gas. The term “non-reactive gas” as used herein refers to a single gas or a mixture of gases that does not participate in the metal layer formation. Exemplary non-reactive gases include argon, helium, nitrogen, hydrogen, and combinations thereof.
  • [0035]
    A “reaction zone” is intended to include any volume that is in fluid communication with a substrate surface being processed. The reaction zone may include any volume within a processing chamber that is between a gas source and the substrate surface. For example, the reaction zone includes any volume downstream of a dosing valve in which a substrate is disposed.
  • [0036]
    The durations for each pulse/dose are variable and may be adjusted to accommodate, for example, the volume capacity of the processing chamber as well as the capabilities of a vacuum system coupled thereto. Additionally, the dose time of a compound may vary according to the flow rate of the compound, the pressure of the compound, the temperature of the compound, the type of dosing valve, the type of control system employed, as well as the ability of the compound to adsorb onto the substrate surface. Dose times may also vary based upon the type of layer being formed and the geometry of the device being formed.
  • [0037]
    Typically, the duration for each pulse/dose or “dose time” is typically about 1.0 second or less. However, a dose time can range from microseconds to milliseconds to seconds, and even to minutes. In general, a dose time should be long enough to provide a volume of compound sufficient to adsorb/chemisorb onto the entire surface of the substrate and form a layer of the compound thereon.
  • [0038]
    [0038]FIG. 3 illustrates a schematic, partial cross section of an exemplary processing chamber 200 for forming a barrier layer according to embodiments of the present invention. Such a processing chamber 200 is available from Applied Materials, Inc. located in Santa Clara, Calif., and a brief description thereof follows. A more detailed description may be found in commonly assigned U.S. patent application Ser. No. 10/032,284, entitled “Gas Delivery Apparatus and Method For Atomic Layer Deposition”, filed on Dec. 21, 2001, which is incorporated herein by reference.
  • [0039]
    The processing chamber 200 may be integrated into an integrated processing platform, such as an Endura™ platform also available from Applied Materials, Inc. Details of the Endura™ platform are described in commonly assigned U.S. patent application Ser. No. 09/451,628, entitled “Integrated Modular Processing Platform”, filed on Nov. 30, 1999, which is incorporated by reference herein.
  • [0040]
    Referring to FIG. 3, the chamber 200 includes a chamber body 202 having a slit valve 208 formed in a sidewall 204 thereof and a substrate support 212 disposed therein. The substrate support 212 is mounted to a lift motor 214 to raise and lower the substrate support 212 and a substrate 210 disposed thereon. The substrate support 212 may also include a vacuum chuck, an electrostatic chuck, or a clamp ring for securing the substrate 212 to the substrate support 212 during processing. Further, the substrate support 212 may be heated using an embedded heating element, such as a resistive heater, or may be heated using radiant heat, such as heating lamps disposed above the substrate support 212. A purge ring 222 may be disposed on the substrate support 212 to define a purge channel 224 that provides a purge gas to prevent deposition on a peripheral portion of the substrate 210.
  • [0041]
    A gas delivery apparatus 230 is disposed at an upper portion of the chamber body 202 to provide a gas, such as a process gas and/or a purge gas, to the chamber 200. A vacuum system 278 is in communication with a pumping channel 279 to evacuate gases from the chamber 200 and to help maintain a desired pressure or a desired pressure range inside a pumping zone 266 of the chamber 200.
  • [0042]
    The gas delivery apparatus 230 includes a chamber lid 232 having an expanding channel 234 formed within a central portion thereof. The chamber lid 232 also includes a bottom surface 260 extending from the expanding channel 234 to a peripheral portion of the chamber lid 232. The bottom surface 260 is sized and shaped to substantially cover the substrate 210 disposed on the substrate support 212. The expanding channel 234 has an inner diameter that gradually increases from an upper portion 237 to a lower portion 235 adjacent the bottom surface 260 of the chamber lid 232. The velocity of a gas flowing therethrough decreases as the gas flows through the expanding channel 234 due to the expansion of the gas. The decreased gas velocity reduces the likelihood of blowing off reactants adsorbed on the surface of the substrate 210.
  • [0043]
    The gas delivery apparatus 230 also includes at least two high speed actuating valves 242 having one or more ports. At least one valve 242 is dedicated to each reactive compound. For example, a first valve is dedicated to a refractory metal-containing compound, such as tantalum and titanium, and a second valve is dedicated to a nitrogen-containing compound. When a ternary material is desired, a third valve is dedicated to an additional compound. For example, if a silicide is desired, the additional compound may be a silicon-containing compound.
  • [0044]
    The valves 242 may be any valve capable of precisely and repeatedly delivering short pulses of compounds into the chamber body 202. In some cases, the on/off cycles or pulses of the valves 242 may be as fast as about 100 msec or less. The valves 242 can be directly controlled by a system computer, such as a mainframe for example, or controlled by a chamber/application specific controller, such as a programmable logic computer (PLC) which is described in more detail in the co-pending U.S. patent application Ser. No. 09/800,881, entitled “Valve Control System For ALD Chamber”, filed on Mar. 7, 2001, which is incorporated by reference herein. For example, the valves 242 may be electronically controlled (EC) valves, which are commercially available from Fujikin of Japan as part number FR-21-6.35 UGF-APD.
  • [0045]
    To facilitate the control and automation of the overall system, the integrated processing system may include a controller 140 comprising a central processing unit (CPU) 142, memory 144, and support circuits 146. The CPU 142 may be one of any form of computer processors that are used in industrial settings for controlling various drives and pressures. The memory 144 is connected to the CPU 142, and may be one or more of a readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote. Software instructions and data can be coded and stored within the memory 144 for instructing the CPU 142. The support circuits 146 are also connected to the CPU 142 for supporting the processor 142 in a conventional manner. The support circuits 146 may include cache, power supplies, clock circuits, input/output circuitry, subsystems, and the like.
  • [0046]
    In a particular embodiment, a TaN barrier layer is formed by cyclically introducing PDMAT and ammonia to the substrate surface. To initiate the cyclical deposition of the TaN layer, a carrier/inert gas such as argon is introduced into the processing chamber 200 to stabilize the pressure and temperature therein. The carrier gas is allowed to flow continuously during the deposition process such that only the argon flows between pulses of each compound. A first pulse of PDMAT is provided from the gas source 238 at a flow rate between about between about 100 sccm and about 400 sccm, with a pulse time of about 0.6 seconds or less after the chamber temperature and pressure have been stabilized at about 200° C. to about 300° C. and about 1 Torr to about 5 Torr. A pulse of ammonia is then provided from the gas source 239 at a flow rate between about 200 sccm and about 600 sccm, with a pulse time of about 0.6 seconds or less.
  • [0047]
    A pause between pulses of PDMAT and ammonia is about 1.0 second or less, preferably about 0.5 seconds or less, more preferably about 0.1 seconds or less. In various aspects, a reduction in time between pulses at least provides higher throughput. As a result, a pause after the pulse of ammonia is also about 1.0 second or less, about 0.5 seconds or less, or about 0.1 seconds or less. Argon gas flowing between about 100 sccm and about 1000 sccm, such as between about 100 sccm and about 400 sccm, is continuously provided from the gas source 240 through each valve 242. In one aspect, a pulse of PDMAT may still be in the chamber when a pulse of ammonia enters. In general, the duration of the carrier gas and/or pump evacuation should be long enough to prevent the pulses of PDMAT and ammonia from mixing together in the reaction zone.
  • [0048]
    The heater temperature is maintained between about 100° C. and about 300° C. at a chamber pressure between about 1.0 and about 5.0 Torr. Each cycle consisting of a pulse of PDMAT, pause, pulse of ammonia, and pause provides a tantalum nitride layer having a thickness between about 0.3 Å and about 1.0 Å per cycle. The alternating sequence may be repeated until the desired thickness is achieved, which is less than about 20 Å, such as about 10 Å. Accordingly, the deposition method requires between 10 and 70 cycles, more typically between 20 and 30 cycles.
  • [0049]
    In another aspect, a ternary barrier layer having a thickness less than about 20 Å, such as 10 Å, is deposited by providing one or more pulses of a refractory metal-containing compound, one or more pulses of a nitrogen-containing compound, and one or more pulses of a silicon-containing compound. Each pulse is adjusted to provide a desirable composition, silicon incorporation level, thickness, density, and step coverage of the refractory metal silicon nitride layer. A “ternary barrier layer” as used herein refers to a material having a composition comprising three major elements, such as titanium, nitrogen and silicon. An exemplary “ternary barrier layer” may also include tantalum, nitrogen and silicon.
  • [0050]
    Each pulse is performed sequentially, and is accompanied by a separate flow of carrier/inert gas at the same process conditions described above. The separate flow of carrier/inert gas may be pulsed between each pulse of reactive compound or the separate flow of carrier/inert gas may be introduced continuously throughout the deposition process.
  • [0051]
    Preferably, the ternary barrier layer contains titanium silicon nitride. In this embodiment, each cycle consists of a pulse of a titanium-containing compound, a pause, a pulse of a silicon-containing compound, a pause, a pulse of a nitrogen-containing compound, and a pause. Exemplary titanium-containing compound include tetrakis (dimethylamino) titanium (TDMAT), tetrakis (ethylmethylamino) titanium (TEMAT), tetrakis (diethylamino) titanium (TDEAT), titanium tetrachloride (TiCl4), titanium iodide (TiI4), titanium bromide (TiBr4), and other titanium halides. Exemplary silicon-containing compounds include silane, disilane, methylsilane, dimethylsilane, chlorosilane (SiH3Cl), dichlorosilane (SiH2Cl2), and trichlorosilane (SiHCl3). Exemplary nitrogen-containing compounds include: ammonia; hydrazine; methylhydrazine; dimethylhydrazine; t-butylhydrazine; phenylhydrazine; azoisobutane; ethylazide; derivatives thereof; and combinations thereof.
  • [0052]
    To initiate the cyclical deposition of a TixSiyN layer, argon is introduced into the processing chamber 200 to stabilize the pressure and temperature therein. This separate flow of argon flows continuously during the deposition process such that only the argon flows between pulses of each compound. The separate flow of argon flows between about 100 sccm and about 1000 sccm, such as between about 100 sccm and about 400 sccm. In one aspect, a pulse of TDMAT is provided at a flow rate between about between about 10 sccm and about 1000 sccm, with a pulse time of about 0.6 seconds or less after the chamber pressure and temperature have been stabilized at about 250° C. and 2 Torr. A pulse of silane is then provided at a flow rate between about 5 sccm and about 500 sccm, with a pulse time of 1 second or less. A pulse of ammonia is then provided at a flow rate between about 100 sccm and about 5,000 sccm, with a pulse time of about 0.6 seconds or less.
  • [0053]
    A pause between pulses of TDMAT and silane is about 1.0 second or less, preferably about 0.5 seconds or less, more preferably about 0.1 seconds or less. A pause between pulses of silane and ammonia is about 1.0 second or less, about 0.5 seconds or less, or about 0.1 seconds or less. A pause after the pulse of ammonia is also about 1.0 second or less, about 0.5 seconds or less, or about 0.1 seconds or less. In one aspect, a pulse of TDMAT may still be in the chamber when a pulse of silane enters, and a pulse of silane may still be in the chamber when a pulse of ammonia enters.
  • [0054]
    The heater temperature is maintained between about 100° C. and about 300° C. at a chamber pressure between about 1.0 and about 5.0 Torr. Each cycle consisting of a pulse of TDMAT, pause, pulse of silane, pause, pulse of ammonia, and pause provides a titanium silicon nitride layer having a thickness between about 0.3 Å and about 1.0 Å per cycle. The alternating sequence may be repeated until the desired thickness is achieved, which is less than about 20 Å, such as about 10 Å. Accordingly, the deposition method requires between 10 and 70 cycles.
  • [0055]
    In yet another aspect, an alpha phase tantalum (α-Ta) layer having a thickness of about 20 Å or less, such as about 10 Å, may be deposited over at least a portion of the previously deposited binary (TaN) or ternary (TiSiN) layers. The α-Ta layer may be deposited using conventional techniques, such as PVD and CVD for example, to form a bilayer stack. For example, the bilayer stack may include a TaN portion deposited by cyclical layer deposition described above and an α-Ta portion deposited by high density plasma physical vapor deposition (HDP-PVD).
  • [0056]
    To further illustrate, the α-Ta portion of the stack may be deposited using an ionized metal plasma (IMP) chamber, such as a Vectra™ chamber, available from Applied Materials, Inc. of Santa Clara, Calif. The IMP chamber includes a target, coil, and biased substrate support member, and may also be integrated into an Endura™ platform, also available from Applied Materials, Inc. A power between about 0.5 kW and about 5 kW is applied to the target, and a power between about 0.5 kW and 3 kW is applied to the coil. A power between about 200 W and about 500 W at a frequency of about 13.56 MHz is also applied to the substrate support member to bias the substrate. Argon is flowed into the chamber at a rate of about 35 sccm to about 85 sccm, and nitrogen may be added to the chamber at a rate of about 5 sccm to about 100 sccm. The pressure of the chamber is typically between about 5 mTorr to about 100 mTorr, while the temperature of the chamber is between about 20° C. and about 300° C.
  • [0057]
    Prior to depositing the barrier layer 130, the patterned or etched substrate dielectric layer 112 may be cleaned to remove native oxides or other contaminants from the surface thereof. For example, reactive gases are excited into a plasma within a remote plasma source chamber such as a Reactive Pre-clean chamber available from Applied Materials, Inc., located in Santa Clara, Calif. Pre-cleaning may also be done within a metal CVD or PVD chamber by connecting the remote plasma source thereto. Alternatively, metal deposition chambers having gas delivery systems could be modified to deliver the pre-cleaning gas plasma through existing gas inlets such as a gas distribution showerhead positioned above the substrate.
  • [0058]
    In one aspect, the reactive pre-clean process forms radicals from a plasma of one or more reactive gases such as argon, helium, hydrogen, nitrogen, fluorine-containing compounds, and combinations thereof. For example, a reactive gas may include a mixture of tetrafluorocarbon (CF4) and oxygen (O2), or a mixture of helium (He) and nitrogen trifluoride (NF3). More preferably, the reactive gas is a mixture of helium and nitrogen trifluoride.
  • [0059]
    Following the argon plasma, the chamber pressure is increased to about 140 mTorr, and a processing gas consisting essentially of hydrogen and helium is introduced into the processing region. Preferably, the processing gas comprises about 5% hydrogen and about 95% helium. The hydrogen plasma is generated by applying between about 50 watts and about 500 watts power. The hydrogen plasma is maintained for about 10 seconds to about 300 seconds.
  • [0060]
    Referring again to FIG. 2C, the seed layer 140 may be deposited using high density plasma physical vapor deposition (HDP-PVD) to enable good conformal coverage. One example of a HDP-PVD chamber is the Self-Ionized Plasma SIP™ chamber, available from Applied Materials, Inc. of Santa Clara, Calif., which may be integrated into an Endura™ platform, available from Applied Materials, Inc. Of course, other techniques, such as physical vapor deposition, chemical vapor deposition, electroless plating, and electroplating, may be used.
  • [0061]
    A typical SIP™ chamber includes a target, coil, and biased substrate support member. To form the copper seed layer, a power between about 0.5 kW and about 5 kW is applied to the target, and a power between about 0.5 kW and 3 kW is applied to the coil. A power between about 200 and about 500 W at a frequency of about 13.56 MHz is applied to bias the substrate. Argon is flowed into the chamber at a rate of about 35 sccm to about 85 sccm, and nitrogen may be added to the chamber at a rate of about 5 sccm to about 100 sccm. The pressure of the chamber is typically between about 5 mTorr to about 100 mTorr.
  • [0062]
    Alternatively, a seed layer 140 containing a copper alloy may be deposited by any suitable technique such as physical vapor deposition, chemical vapor deposition, electroless deposition, or a combination of techniques. Preferably, the copper alloy seed layer 140 contains aluminum and is deposited using a PVD technique described above. During deposition, the process chamber is maintained at a pressure between about 0.1 mtorr and about 10 mtorr. The target includes copper and between about 2 and about 10 atomic weight percent of aluminum. The target may be DC-biased at a power between about 5 kW and about 100 kW. The pedestal may be RF-biased at a power between about 10 W and about 1000 W. The copper alloy seed layer 140 is deposited to a thickness of at least about 5 Å, and between about 5 Å and about 500 Å.
  • [0063]
    Referring to FIG. 2D, the metal layer 142 is preferably copper and deposited using 140 using CVD, PVD, electroplating, or electroless techniques. Preferably, the copper layer 142 is formed within an electroplating cell, such as the Electra™ Cu ECP system, available from Applied Materials, Inc., of Santa Clara, Calif. The Electra™ Cu ECP system may also be integrated into an Endura™ platform also available from Applied Materials, Inc.
  • [0064]
    A copper electrolyte solution and copper electroplating technique is described in commonly assigned U.S. Pat. No. 6,113,771, entitled “Electro-deposition Chemistry”, which is incorporated by reference herein. Typically, the electroplating bath has a copper concentration greater than about 0.7M, a copper sulfate concentration of about 0.85, and a pH of about 1.75. The electroplating bath may also contain various additives as is well known in the art. The temperature of the bath is between about 15° C. and about 25° C. The bias is between about −15 volts to about 15 volts. In one aspect, the positive bias ranges from about 0.1 volts to about 10 volts and the negatives bias ranges from about −0.1 to about −10 volts.
  • [0065]
    Optionally, an anneal treatment may be performed following the metal layer 142 deposition whereby the wafer is subjected to a temperature between about 100° C. and about 400° C. for about 10 minutes to about 1 hour, preferably about 30 minutes. A carrier/purge gas such as helium, hydrogen, nitrogen, or a mixture thereof is introduced at a rate of about 100 sccm to about 10,000 sccm. The chamber pressure is maintained between about 2 Torr and about 10 Torr. The RF power is about 200 W to about 1,000 W at a frequency of about 13.56 MHz, and the preferable substrate spacing is between about 300 mils and about 800 mils.
  • [0066]
    Following deposition, the top portion of the resulting structure may be planarized. A chemical mechanical polishing (CMP) apparatus may be used, such as the Mirra™ System available from Applied Materials, Santa Clara, Calif., for example. Optionally, the intermediate surfaces of the structure may be planarized between the deposition of the subsequent layers described above.
  • [0067]
    [0067]FIG. 4 is a schematic top-view diagram of an exemplary multi-chamber processing system 600 that may be adapted to perform processes as disclosed herein. Such a processing system 600 may be an Endura™ system, commercially available from Applied Materials, Inc., of Santa Clara, Calif. A similar multi-chamber processing system is disclosed in U.S. Pat. No. 5,186,718, entitled “Stage Vacuum Wafer Processing System and Method,” issued on Feb. 16, 1993, which is incorporated by reference herein.
  • [0068]
    The system 600 generally includes load lock chambers 602, 604 for the transfer of substrates into and out from the system 600. Typically, since the system 600 is under vacuum, the load lock chambers 602, 604 may “pump down” the substrates introduced into the system 600. A first robot 610 may transfer the substrates between the load lock chambers 602, 604, and a first set of one or more substrate processing chambers 612, 614, 616, 618 (four are shown). Each processing chamber 612, 614, 616, 618, can be outfitted to perform a number of substrate processing operations such as cyclical layer deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), etch, pre-clean, degas, orientation and other substrate processes. The first robot 610 also transfers substrates to/from one or more transfer chambers 622, 624.
  • [0069]
    The transfer chambers 622, 624, are used to maintain ultrahigh vacuum conditions while allowing substrates to be transferred within the system 600. A second robot 630 may transfer the substrates between the transfer chambers 622, 624 and a second set of one or more processing chambers 632, 634, 636, 638. Similar to processing chambers 612, 614, 616, 618, the processing chambers 632, 634, 636, 638 can be outfitted to perform a variety of substrate processing operations, such as cyclical layer deposition, chemical vapor deposition (CVD), physical vapor deposition (PVD), etch, pre-clean, degas, and orientation, for example. Any of the substrate processing chambers 612, 614, 616, 618, 632, 634, 636, 638 may be removed from the system 600 if not necessary for a particular process to be performed by the system 600.
  • [0070]
    In one arrangement, each processing chamber 632 and 638 may be a physical vapor deposition chamber, a chemical vapor deposition chamber, or a cyclical deposition chamber adapted to deposit a seed layer; each processing chamber 634 and 636 may be a cyclical deposition chamber, a chemical vapor deposition chamber, or a physical vapor deposition chamber adapted to deposit a barrier layer; each processing chamber 612 and 614 may be a physical vapor deposition chamber, a chemical vapor deposition chamber, or a cyclical deposition chamber adapted to deposit a dielectric layer; and each processing chamber 616 and 618 may be an etch chamber outfitted to etch apertures or openings for interconnect features. This one particular arrangement of the system 600 is provided to illustrate the invention and should not be used to limit the scope of the invention.
  • [0071]
    The following example is intended to provide a non-limiting illustration of one embodiment of the present invention.
  • EXAMPLE
  • [0072]
    A TaN layer was deposited over a lower level copper layer using cyclical deposition to a thickness of about 20 Å. A copper alloy seed layer was deposited over the TaN layer by physical vapor deposition to a thickness of about 100 Å. The copper alloy seed layer contained aluminum in a concentration of about 2.0 atomic percent, and was deposited by PVD using a copper-aluminum target consisting of aluminum in a concentration of about 2.0 atomic percent. A bulk copper layer was then deposited using ECP to fill the feature. The substrate was then annealed at a temperature of about 380° C. for a time period of about 15 minutes in a nitrogen (N2) and hydrogen (H2) ambient.
  • [0073]
    The overall feature resistance was significantly reduced and the upper level copper layer surprisingly exhibited a grain growth similar to that of the lower level copper layer. The barrier performance of the TaN layer exhibited longer TTF compared with 50 Å PVD Ta. Further, the TaN layer showed low contact resistance and tight spread distribution. The TaN layer also exhibited excellent topography, having a smooth and pinhole free surface. Finally, the copper alloy seed layer showed excellent adhesion/wetting to the TaN layer.
  • [0074]
    While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (33)

1. A method for forming a metal interconnect on a substrate, comprising:
depositing a refractory metal containing barrier layer having a thickness that exhibits a crystalline like structure and is sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound;
depositing a seed layer on at least a portion of the barrier layer; and
depositing a second metal layer on at least a portion of the seed layer.
2. The method of claim 1, wherein the refractory metal containing barrier comprises tantalum nitride.
3. The method of claim 1, wherein a grain growth of the metal layer continues across the barrier layer into the second metal layer.
4. The method of claim 1, wherein each pulse is repeated until the refractory metal containing barrier layer has a thickness less than about 20 angstroms.
5. The method of claim 1, wherein each pulse is repeated until the refractory metal containing barrier layer has a thickness of about 10 angstroms.
6. The method of claim 1, wherein the refractory metal containing barrier layer has a thickness of about 10 angstroms.
7. The method of claim 1, wherein the alternate pulsing is repeated between about 10 and about 70 times to form the refractory metal nitride layer.
8. The method of claim 1, further comprising flowing a purge gas continuously during each pulse of the metal-containing compound and each pulse of the nitrogen-containing compound.
9. The method of claim 8, wherein the purge gas comprises argon, nitrogen, helium, or combinations thereof.
10. The method of claim 8, wherein the purge gas has a flowrate of about 200 sccm to about 1,000 sccm.
11. The method of claim 1, wherein each pulse of the metal-containing compound has a flow rate of about 100 sccm to about 400 sccm.
12. The method of claim 1, wherein each pulse of the nitrogen-containing compound has a flow rate of about 200 sccm to about 600 sccm.
13. The method of claim 1, wherein each pulse of the metal-containing compound and the nitrogen-containing is separated by a time delay.
14. The method of claim 13, wherein each time delay is long enough for a volume of the metal-containing compound or a volume of the nitrogen-containing compound to adsorb onto the substrate surface.
15 The method of claim 14, wherein the time delay is long enough to remove non-adsorbed molecules from the substrate surface.
16. The method of claim 1, wherein the nitrogen-containing compound is selected from a group consisting of ammonia; hydrazine; methylhydrazine; dimethylhydrazine; t-butylhydrazine; phenylhydrazine; azoisobutane; ethylazide; derivatives thereof; and combinations thereof.
17. The method of claim 1, wherein the metal-containing compound is selected from a group consisting of: tetrakis (dimethylamino) titanium (TDMAT); tetrakis (ethylmethylamino) titanium (TEMAT); tetrakis (diethylamino) titanium (TDEAT); titanium tetrachloride (TiCl4); titanium iodide (Til4); titanium bromide (TiBr4); t-butylimino tris(diethylamino) tantalum (TBTDET); pentakis (ethylmethylamino); tantalum (PEMAT); pentakis (dimethylamino) tantalum (PDMAT); pentakis (diethylamino) tantalum (PDEAT); t-butylimino tris(diethyl methylamino) tantalum(TBTMET); t-butylimino tris(dimethyl amino) tantalum (TBTDMT); bis(cyclopentadienyl) tantalum trihydride ((Cp)2TaH3); bis(methylcyclopentadienyl) tantalum trihydride ((CpMe)2TaH3); derivatives thereof; and combinations thereof.
18. The method of claim 1, wherein the first and second metal layers each comprise tungsten, copper, or a combination thereof.
19. The method of claim 1, wherein the seed layer comprises copper and a metal selected from the group consisting of aluminum, magnesium, titanium, zirconium, tin, and combinations thereof.
20. The method of claim 1, wherein the seed layer is a dual alloy seed layer comprising copper and aluminum.
21. The method of claim 1, wherein the seed layer comprises a first seed layer deposited over the barrier layer and a second seed layer deposited over the first seed layer.
22. The method of claim 21, wherein the first seed layer comprises a copper alloy seed layer of the copper and a metal selected from the group consisting of aluminum, magnesium, titanium, zirconium, tin, and combinations thereof.
23. The method of claim 21, wherein the second seed layer comprises undoped copper.
24. The method of claim 21, wherein the first seed layer comprises a metal selected from the group consisting of aluminum, magnesium, titanium, zirconium, tin, and combinations thereof.
25. The method of claim 24, wherein the second seed layer comprises undoped copper.
26. A method for forming a metal interconnect on a substrate, comprising:
depositing a tantalum nitride barrier layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a tantalum-containing compound and one or more pulses of a nitrogen-containing compound;
depositing a dual alloy seed layer; and
depositing a second metal layer on at least a portion of the dual alloy seed layer.
27. A method for forming a metal interconnect on a substrate, comprising:
depositing a first metal layer on a substrate surface;
depositing a titanium silicon nitride layer having a thickness less than about 20 angstroms over at least a portion of the first metal layer by alternately introducing one or more pulses of a titanium-containing compound, one or more pulses of a silicon-containing compound, and one or more pulses of a nitrogen-containing compound;
depositing a dual alloy seed layer; and
depositing a second metal layer on at least a portion of the dual alloy seed layer.
28. A method for forming a metal interconnect on a substrate, comprising:
depositing a tantalum silicon nitride layer having a thickness less than about 20 angstroms on at least a portion of a metal layer by alternately introducing one or more pulses of a tantalum-containing compound, one or more pulses of a silicon-containing compound, and one or more pulses of a nitrogen-containing compound;
depositing a dual alloy seed layer; and
depositing a second metal layer on at least a portion of the dual alloy seed layer.
29. A method for forming a metal interconnect on a substrate, comprising:
depositing a bilayer barrier having a thickness less than about 20 angstroms on at least a portion of a metal layer, the bilayer barrier comprising:
a first layer of tantalum nitride deposited by alternately introducing one or more pulses of a tantalum-containing compound and one or more pulses of a nitrogen-containing compound; and
a second layer of alpha phase tantalum;
depositing a dual alloy seed layer; and
depositing a second metal layer on at least a portion of the dual alloy seed layer.
30. A method for forming a metal interconnect on a substrate, comprising:
depositing a first metal layer on a substrate surface;
depositing a tantalum nitride barrier layer having a thickness less than about 20 angstroms on at least a portion of the first metal layer by alternately introducing one or more pulses of a tantalum-containing compound and one or more pulses of a nitrogen-containing compound;
depositing a dual alloy seed layer comprising copper and a metal selected from the group consisting of aluminum, magnesium, titanium, zirconium, tin, and combinations thereof; and
depositing a second metal layer on at least a portion of the dual alloy seed layer.
31. The method of claim 30, wherein the dual alloy seed layer comprises a first seed layer deposited over the barrier layer and a second seed layer deposited over the first seed layer.
32. The method of claim 31, wherein the first seed layer comprises a copper alloy seed layer of the copper and the metal.
33. The method of claim 31, wherein the second seed layer comprises undoped copper.
US10193333 2001-10-26 2002-07-10 Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application Abandoned US20030082307A1 (en)

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US10193333 US20030082307A1 (en) 2001-10-26 2002-07-10 Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application
PCT/US2002/034277 WO2003038892A3 (en) 2001-10-26 2002-10-25 Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization
KR20047006190A KR20040058239A (en) 2001-10-26 2002-10-25 Integration of ald tantalum nitride and alpha-phase tantalum for copper metallization application
JP2003541048A JP4711624B2 (en) 2001-10-26 2002-10-25 Accumulation of ald tantalum nitride and alpha phase tantalum for copper electrodes forming applications
CN 02821269 CN1319146C (en) 2001-10-26 2002-10-25 Integration of ald tantalum nitride and alpha-phase tantalum for copper metallization application
US10865042 US7049226B2 (en) 2001-09-26 2004-06-10 Integration of ALD tantalum nitride for copper metallization
US11368191 US20060148253A1 (en) 2001-09-26 2006-03-03 Integration of ALD tantalum nitride for copper metallization
US12627977 US8324095B2 (en) 2001-09-26 2009-11-30 Integration of ALD tantalum nitride for copper metallization

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US10199415 Abandoned US20030082301A1 (en) 2001-10-26 2002-07-18 Enhanced copper growth with ultrathin barrier layer for high performance interconnects
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Cited By (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020036780A1 (en) * 2000-09-27 2002-03-28 Hiroaki Nakamura Image processing apparatus
US20030082301A1 (en) * 2001-10-26 2003-05-01 Applied Materials, Inc. Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US20030108674A1 (en) * 2001-12-07 2003-06-12 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US20030224600A1 (en) * 2002-03-04 2003-12-04 Wei Cao Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US20040014320A1 (en) * 2002-07-17 2004-01-22 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US20040018304A1 (en) * 2002-07-10 2004-01-29 Applied Materials, Inc. Method of film deposition using activated precursor gases
US20040144311A1 (en) * 2002-11-14 2004-07-29 Ling Chen Apparatus and method for hybrid chemical processing
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
US20040197492A1 (en) * 2001-05-07 2004-10-07 Applied Materials, Inc. CVD TiSiN barrier for copper integration
US20040224527A1 (en) * 2002-08-15 2004-11-11 Micron Technology, Inc. Atomic layer deposition methods
WO2004106584A1 (en) * 2003-05-27 2004-12-09 Applied Materials, Inc. Method and apparatus for generating a precursor for a semiconductor processing system
US6831004B2 (en) 2000-06-27 2004-12-14 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US20040256351A1 (en) * 2003-01-07 2004-12-23 Hua Chung Integration of ALD/CVD barriers with porous low k materials
US20050009325A1 (en) * 2003-06-18 2005-01-13 Hua Chung Atomic layer deposition of barrier materials
EP1507289A2 (en) * 2003-08-14 2005-02-16 Texas Instruments Incorporated Diffusion barrier for copper lines in integrated circuits
US20060019495A1 (en) * 2004-07-20 2006-01-26 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata
US20060128150A1 (en) * 2004-12-10 2006-06-15 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US20060211224A1 (en) * 2005-03-21 2006-09-21 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US20060246699A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Process for electroless copper deposition on a ruthenium seed
US20070054047A1 (en) * 2005-09-06 2007-03-08 Tokyo Electron Limited Method of forming a tantalum-containing layer from a metalorganic precursor
US20070054046A1 (en) * 2005-09-06 2007-03-08 Tokyo Electron Limited Method of forming a tantalum-containing layer from a metalorganic precursor
US7265048B2 (en) 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US20080041313A1 (en) * 2001-10-26 2008-02-21 Ling Chen Gas delivery apparatus for atomic layer deposition
US20080085611A1 (en) * 2006-10-09 2008-04-10 Amit Khandelwal Deposition and densification process for titanium nitride barrier layers
US20080099933A1 (en) * 2006-10-31 2008-05-01 Choi Kenric T Ampoule for liquid draw and vapor draw with a continous level sensor
US20090081868A1 (en) * 2007-09-25 2009-03-26 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US20090078916A1 (en) * 2007-09-25 2009-03-26 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US20090087585A1 (en) * 2007-09-28 2009-04-02 Wei Ti Lee Deposition processes for titanium nitride barrier and aluminum
US20090104775A1 (en) * 2005-03-03 2009-04-23 Narishi Gonohe Method for Forming Tantalum Nitride Film
US7524374B2 (en) 2002-07-17 2009-04-28 Applied Materials, Inc. Method and apparatus for generating a precursor for a semiconductor processing system
US7651934B2 (en) 2005-03-18 2010-01-26 Applied Materials, Inc. Process for electroless copper deposition
US7670945B2 (en) 1998-10-01 2010-03-02 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US7674715B2 (en) 2000-06-28 2010-03-09 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US20100062149A1 (en) * 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US7682946B2 (en) 2005-11-04 2010-03-23 Applied Materials, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7709385B2 (en) 2000-06-28 2010-05-04 Applied Materials, Inc. Method for depositing tungsten-containing layers by vapor deposition techniques
US20100120245A1 (en) * 2008-11-07 2010-05-13 Agus Sofian Tjandra Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
US7732325B2 (en) 2002-01-26 2010-06-08 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US7745333B2 (en) 2000-06-28 2010-06-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7745329B2 (en) 2002-02-26 2010-06-29 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7794544B2 (en) 2004-05-12 2010-09-14 Applied Materials, Inc. Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7867914B2 (en) 2002-04-16 2011-01-11 Applied Materials, Inc. System and method for forming an integrated barrier layer
US20110026297A1 (en) * 2009-07-30 2011-02-03 Art Talent Industrial Limited Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory device
US20110175233A1 (en) * 2010-01-19 2011-07-21 Akira Ueki Semiconductor device and method for fabricating the same
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US20120111271A1 (en) * 2007-10-11 2012-05-10 Begarney Michael J Chemical vapor deposition reactor
US8187970B2 (en) 2001-07-25 2012-05-29 Applied Materials, Inc. Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US20120156872A1 (en) * 2010-12-21 2012-06-21 Applied Materials, Inc. Methods for depositing materials in high aspect ratio features
KR101170860B1 (en) * 2004-06-30 2012-08-02 인텔 코포레이션 Atomic layer deposited tantalum containing adhesion layer
US20120266821A1 (en) * 2005-01-18 2012-10-25 Asm America, Inc. Reaction system for growing a thin film
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US8491967B2 (en) * 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US8911826B2 (en) * 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US20160329238A1 (en) * 2014-02-26 2016-11-10 Lam Research Corporation Inhibitor plasma mediated atomic layer deposition for seamless feature fill
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap

Families Citing this family (265)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8696875B2 (en) 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US6451692B1 (en) * 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
WO2003029515A3 (en) * 2001-07-16 2004-02-12 Applied Materials Inc Formation of composite tungsten films
US6936538B2 (en) 2001-07-16 2005-08-30 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US20030029715A1 (en) * 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
WO2003030224A3 (en) * 2001-07-25 2004-02-19 Applied Materials Inc Barrier formation using novel sputter-deposition method
US7085616B2 (en) * 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) * 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
WO2003031679B1 (en) * 2001-10-10 2004-05-13 Applied Materials Inc Method for depositing metal layers employing sequential deposition techniques
US7780789B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
US20080102203A1 (en) * 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US6939801B2 (en) * 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
WO2003065424A3 (en) * 2002-01-25 2004-03-11 Applied Materials Inc Apparatus for cyclical deposition of thin films
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6866746B2 (en) * 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US20030235961A1 (en) * 2002-04-17 2003-12-25 Applied Materials, Inc. Cyclical sequential deposition of multicomponent films
US6861094B2 (en) * 2002-04-25 2005-03-01 Micron Technology, Inc. Methods for forming thin layers of materials on micro-device workpieces
US6838114B2 (en) * 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US7041335B2 (en) * 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US20030232501A1 (en) * 2002-06-14 2003-12-18 Kher Shreyas S. Surface pre-treatment for enhancement of nucleation of high dielectric constant materials
US6858547B2 (en) * 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US7118783B2 (en) * 2002-06-26 2006-10-10 Micron Technology, Inc. Methods and apparatus for vapor processing of micro-device workpieces
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
KR100476370B1 (en) * 2002-07-19 2005-03-16 주식회사 하이닉스반도체 Batch type Atomic Layer Deposition and method for insitu-cleaning in the batch type atomic layer deposition
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US20040069227A1 (en) * 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7540920B2 (en) * 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
JP3866655B2 (en) * 2002-12-26 2007-01-10 有限会社真空実験室 Processing apparatus and processing method
US7262133B2 (en) * 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US20040177813A1 (en) 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
US20040180551A1 (en) * 2003-03-13 2004-09-16 Biles Peter John Carbon hard mask for aluminum interconnect fabrication
US7342984B1 (en) 2003-04-03 2008-03-11 Zilog, Inc. Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character
US20040198069A1 (en) * 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
CN100593235C (en) 2003-06-13 2010-03-03 应用材料公司 Integration of ALD tantalum nitride for copper metallization
KR100724181B1 (en) * 2003-06-16 2007-05-31 동경 엘렉트론 주식회사 Process for depositing film, process for fabricating semiconductor device, semiconductor device and system for depositing film
US6880592B2 (en) * 2003-06-26 2005-04-19 Advanced Technology Materials, Inc. Canister guard
US8152922B2 (en) * 2003-08-29 2012-04-10 Asm America, Inc. Gas mixer and manifold assembly for ALD reactor
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7169713B2 (en) * 2003-09-26 2007-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition (ALD) method with enhanced deposition rate
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US8501594B2 (en) * 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
US7647886B2 (en) * 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
KR101233525B1 (en) * 2003-11-20 2013-02-14 가부시키가이샤 알박 Method of cleaning surface of semiconductor substrate, method of manufacturing film, method of manufacturing semiconductor device and semiconductor device
US20050109276A1 (en) * 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US20050181212A1 (en) * 2004-02-17 2005-08-18 General Electric Company Composite articles having diffusion barriers and devices incorporating the same
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20060051966A1 (en) * 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US7780793B2 (en) * 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US7445810B2 (en) * 2004-04-15 2008-11-04 Hewlett-Packard Development Company, L.P. Method of making a tantalum layer and apparatus using a tantalum layer
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7211507B2 (en) * 2004-06-02 2007-05-01 International Business Machines Corporation PE-ALD of TaN diffusion barrier region on low-k materials
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
KR20070048177A (en) * 2004-06-28 2007-05-08 캠브리지 나노테크 인크. Vapor deposition systems and methods
US20060019032A1 (en) * 2004-07-23 2006-01-26 Yaxin Wang Low thermal budget silicon nitride formation for advance transistor fabrication
KR100552820B1 (en) * 2004-09-17 2006-02-09 동부아남반도체 주식회사 Manufacturing method of semiconductor device
JP4783561B2 (en) * 2004-09-27 2011-09-28 株式会社アルバック The method of forming the copper wiring
CN100537837C (en) * 2004-09-27 2009-09-09 株式会社爱发科;宇部兴产株式会社 Process for formation of copper-containing film
US20060084283A1 (en) * 2004-10-20 2006-04-20 Paranjpe Ajit P Low temperature sin deposition methods
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
US7312128B2 (en) * 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7078810B2 (en) * 2004-12-01 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and fabrication method thereof
US7560352B2 (en) * 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
CN101115864B (en) * 2005-02-10 2010-10-13 东京毅力科创株式会社 Layered thin film structure, layered thin film forming method, film forming system and storage medium
US7351285B2 (en) * 2005-03-29 2008-04-01 Tokyo Electron Limited Method and system for forming a variable thickness seed layer
JP3984639B2 (en) * 2005-03-30 2007-10-03 松下電器産業株式会社 Transmission line
US8298336B2 (en) * 2005-04-01 2012-10-30 Lam Research Corporation High strip rate downstream chamber
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7651955B2 (en) * 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20060286774A1 (en) * 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7550381B2 (en) * 2005-07-18 2009-06-23 Applied Materials, Inc. Contact clean by remote plasma and repair of silicide surface
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US20070049043A1 (en) * 2005-08-23 2007-03-01 Applied Materials, Inc. Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvement
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US20070065576A1 (en) * 2005-09-09 2007-03-22 Vikram Singh Technique for atomic layer deposition
US20070082507A1 (en) * 2005-10-06 2007-04-12 Applied Materials, Inc. Method and apparatus for the low temperature deposition of doped silicon nitride films
US7464917B2 (en) * 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US8460519B2 (en) * 2005-10-28 2013-06-11 Applied Materials Inc. Protective offset sputtering
US7884032B2 (en) * 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US8454804B2 (en) * 2005-10-28 2013-06-04 Applied Materials Inc. Protective offset sputtering
US7942970B2 (en) * 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition
US8216374B2 (en) * 2005-12-22 2012-07-10 Applied Materials, Inc. Gas coupler for substrate processing chamber
KR100717501B1 (en) * 2005-12-29 2007-05-04 동부일렉트로닉스 주식회사 Manufacturing method of metal line in semiconductor device
KR101522725B1 (en) * 2006-01-19 2015-05-26 에이에스엠 아메리카, 인코포레이티드 High Temperature ALD Inlet Manifold
US20070169687A1 (en) * 2006-01-26 2007-07-26 Caracal, Inc. Silicon carbide formation by alternating pulses
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
US20070193637A1 (en) * 2006-02-23 2007-08-23 Micron Technology, Inc. Systems and methods for controlling fluid flow
US7645484B2 (en) * 2006-03-31 2010-01-12 Tokyo Electron Limited Method of forming a metal carbide or metal carbonitride film having improved adhesion
US7674337B2 (en) * 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US20070252299A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Synchronization of precursor pulsing and wafer rotation
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
US20080026149A1 (en) * 2006-05-31 2008-01-31 Asm America, Inc. Methods and systems for selectively depositing si-containing films using chloropolysilanes
US7501355B2 (en) * 2006-06-29 2009-03-10 Applied Materials, Inc. Decreasing the etch rate of silicon nitride by carbon addition
JP5558815B2 (en) * 2006-06-30 2014-07-23 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Formation of nanocrystals
JP2008034648A (en) * 2006-07-28 2008-02-14 Dainippon Screen Mfg Co Ltd Substrate processing device
WO2008016650A3 (en) 2006-07-31 2008-04-10 Applied Materials Inc Methods of forming carbon-containing silicon epitaxial layers
US7588980B2 (en) * 2006-07-31 2009-09-15 Applied Materials, Inc. Methods of controlling morphology during epitaxial layer formation
US7727908B2 (en) 2006-08-03 2010-06-01 Micron Technology, Inc. Deposition of ZrA1ON films
US7432548B2 (en) 2006-08-31 2008-10-07 Micron Technology, Inc. Silicon lanthanide oxynitride films
US7776765B2 (en) 2006-08-31 2010-08-17 Micron Technology, Inc. Tantalum silicon oxynitride high-k dielectrics and metal gates
US7544604B2 (en) * 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
CN101528973B (en) 2006-10-24 2012-04-25 应用材料公司 Vortex chamber lids for atomic layer deposition
US7692222B2 (en) * 2006-11-07 2010-04-06 Raytheon Company Atomic layer deposition in the formation of gate structures for III-V semiconductor
US20080132039A1 (en) * 2006-12-01 2008-06-05 Yonah Cho Formation and treatment of epitaxial layer containing silicon and carbon
US7837790B2 (en) * 2006-12-01 2010-11-23 Applied Materials, Inc. Formation and treatment of epitaxial layer containing silicon and carbon
US7741200B2 (en) * 2006-12-01 2010-06-22 Applied Materials, Inc. Formation and treatment of epitaxial layer containing silicon and carbon
US20080138955A1 (en) * 2006-12-12 2008-06-12 Zhiyuan Ye Formation of epitaxial layer containing silicon
US7960236B2 (en) * 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US8394196B2 (en) * 2006-12-12 2013-03-12 Applied Materials, Inc. Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
US7897495B2 (en) * 2006-12-12 2011-03-01 Applied Materials, Inc. Formation of epitaxial layer containing silicon and carbon
US20080145536A1 (en) * 2006-12-13 2008-06-19 Applied Materials, Inc. METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SiBN DEPOSITION
US8026605B2 (en) * 2006-12-14 2011-09-27 Lam Research Corporation Interconnect structure and method of manufacturing a damascene structure
US8821637B2 (en) * 2007-01-29 2014-09-02 Applied Materials, Inc. Temperature controlled lid assembly for tungsten nitride deposition
US9064960B2 (en) * 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
US7589020B2 (en) * 2007-05-02 2009-09-15 Tokyo Electron Limited Method for depositing titanium nitride films for semiconductor manufacturing
US7776733B2 (en) * 2007-05-02 2010-08-17 Tokyo Electron Limited Method for depositing titanium nitride films for semiconductor manufacturing
KR20090018290A (en) * 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 Deposition apparatus
KR101046520B1 (en) * 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 Source gas flow path control in pecvd system to control a by-product film deposition on inside chamber
US8182608B2 (en) 2007-09-26 2012-05-22 Eastman Kodak Company Deposition system for thin film formation
US20090087550A1 (en) * 2007-09-27 2009-04-02 Tokyo Electron Limited Sequential flow deposition of a tungsten silicide gate electrode film
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
KR101595686B1 (en) * 2007-10-19 2016-02-18 엠케이에스 인스트루먼츠, 인코포레이티드 Toroidal plasma chamber for high gas flow rate process
US20090107955A1 (en) * 2007-10-26 2009-04-30 Tiner Robin L Offset liner for chamber evacuation
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8187381B2 (en) 2008-08-22 2012-05-29 Applied Materials, Inc. Process gas delivery for semiconductor process chamber
US8425977B2 (en) * 2008-09-29 2013-04-23 Applied Materials, Inc. Substrate processing chamber with off-center gas delivery funnel
US9175388B2 (en) * 2008-11-01 2015-11-03 Ultratech, Inc. Reaction chamber with removable liner
US9328417B2 (en) * 2008-11-01 2016-05-03 Ultratech, Inc. System and method for thin film deposition
US20100183825A1 (en) * 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
US8557702B2 (en) * 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
FI123539B (en) * 2009-02-09 2013-06-28 Beneq Oy ALD reactor, a method of loading the ALD reactor and the production
JP5281146B2 (en) * 2009-03-13 2013-09-04 東京エレクトロン株式会社 The substrate processing apparatus, the trap apparatus, a control method of the control method and the trap apparatus of the substrate processing apparatus
US8307854B1 (en) 2009-05-14 2012-11-13 Vistadeltek, Inc. Fluid delivery substrates for building removable standard fluid delivery sticks
CN102804335B (en) 2009-06-10 2015-10-21 威斯塔德尔特有限责任公司 Limit flow rate and / or high temperature fluid delivery base
US20110097487A1 (en) * 2009-10-27 2011-04-28 Kerr Roger S Fluid distribution manifold including bonded plates
FI20096380A0 (en) * 2009-12-22 2009-12-22 Beneq Oy Thin-film solar cell, method of preparation and use
JP5445252B2 (en) * 2010-03-16 2014-03-19 東京エレクトロン株式会社 The film-forming apparatus
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9443753B2 (en) * 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
WO2012039833A3 (en) 2010-09-24 2012-05-10 Applied Materials, Inc. Low temperature silicon carbide deposition process
CN102002666B (en) * 2010-10-22 2012-06-27 哈尔滨工业大学 Preparation method of tantalum nitride diffusion impervious layer for copper interconnection
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
JP5661523B2 (en) * 2011-03-18 2015-01-28 東京エレクトロン株式会社 Film forming method and a film forming apparatus
US8524600B2 (en) 2011-03-31 2013-09-03 Applied Materials, Inc. Post deposition treatments for CVD cobalt films
US9695510B2 (en) * 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
US8815344B2 (en) * 2012-03-14 2014-08-26 Applied Materials, Inc. Selective atomic layer depositions
US9048294B2 (en) 2012-04-13 2015-06-02 Applied Materials, Inc. Methods for depositing manganese and manganese nitrides
US9076661B2 (en) 2012-04-13 2015-07-07 Applied Materials, Inc. Methods for manganese nitride integration
US9269574B2 (en) 2012-04-25 2016-02-23 Applied Materials, Inc. Methods of fabricating dielectric films from metal amidinate precursors
US9598766B2 (en) 2012-05-27 2017-03-21 Air Products And Chemicals, Inc. Vessel with filter
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
JP6117588B2 (en) * 2012-12-12 2017-04-19 東京エレクトロン株式会社 The method of forming the Cu wiring
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
JP6017396B2 (en) * 2012-12-18 2016-11-02 東京エレクトロン株式会社 Thin film forming method and thin film forming apparatus
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US8735280B1 (en) 2012-12-21 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of semiconductor integrated circuit fabrication
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9790596B1 (en) * 2013-01-30 2017-10-17 Kyocera Corporation Gas nozzle and plasma device employing same
US9659814B2 (en) 2013-02-01 2017-05-23 Applied Materials, Inc. Doping control of metal nitride films
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US9005704B2 (en) 2013-03-06 2015-04-14 Applied Materials, Inc. Methods for depositing films comprising cobalt and cobalt nitrides
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
KR20150050638A (en) * 2013-10-29 2015-05-11 에이에스엠 아이피 홀딩 비.브이. Deposition apparatus
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9460932B2 (en) 2013-11-11 2016-10-04 Applied Materials, Inc. Surface poisoning using ALD for high selectivity deposition of high aspect ratio features
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
CN104805418A (en) * 2014-01-23 2015-07-29 北京北方微电子基地设备工艺研究中心有限责任公司 Process control method and process control system in atmospheric pressure chemical vapor deposition
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
CN104979276A (en) * 2014-04-09 2015-10-14 中芯国际集成电路制造(上海)有限公司 Manufacturing method of semiconductor device
US9177858B1 (en) 2014-05-08 2015-11-03 GlobalFoundries, Inc. Methods for fabricating integrated circuits including barrier layers for interconnect structures
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
KR20160008367A (en) 2014-07-14 2016-01-22 삼성전자주식회사 Plasma generating method in RPS(Remote Plasma Source) and method for fabricating semiconductor device comprising the same plasma generating method
CA2944315A1 (en) 2014-07-17 2016-01-21 Reliance Industries Limited A process for modifying a heterogeneous catalyst with an organometallic compound, a heterogeneous catalyst and system thereof
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
JP5792364B1 (en) * 2014-07-31 2015-10-07 株式会社日立国際電気 A substrate processing apparatus, the chamber lid assembly, a method of manufacturing a semiconductor device, a program and a recording medium
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
JP2016139795A (en) * 2015-01-22 2016-08-04 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Improved injector for spatially separated atomic layer deposition chamber
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures

Citations (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372598B1 (en) *
US28924A (en) * 1860-06-26 Vapor-lamp
US31618A (en) * 1861-03-05 Water-elevator
US41250A (en) * 1864-01-12 Improvement in burning, roasting,, and smelting ores
US54769A (en) * 1866-05-15 Iiviproveivient in churn-dashers
US76507A (en) * 1868-04-07 Egbert o br
US76837A (en) * 1868-04-14 John somerville and egbert elsdon
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5221449A (en) * 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
US5281485A (en) * 1990-10-26 1994-01-25 International Business Machines Corporation Structure and method of making Alpha-Ta in thin films
US5306666A (en) * 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
US5480818A (en) * 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
US5483919A (en) * 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
US5526244A (en) * 1993-05-24 1996-06-11 Bishop; Vernon R. Overhead luminaire
US5711811A (en) * 1994-11-28 1998-01-27 Mikrokemia Oy Method and equipment for growing thin films
US5855680A (en) * 1994-11-28 1999-01-05 Neste Oy Apparatus for growing thin films
US5913147A (en) * 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US6015590A (en) * 1994-11-28 2000-01-18 Neste Oy Method for growing thin films
US6015917A (en) * 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6043177A (en) * 1997-01-21 2000-03-28 University Technology Corporation Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition
US6066358A (en) * 1995-11-21 2000-05-23 Applied Materials, Inc. Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer
US6174809B1 (en) * 1997-12-31 2001-01-16 Samsung Electronics, Co., Ltd. Method for forming metal layer using atomic layer deposition
US6181012B1 (en) * 1998-04-27 2001-01-30 International Business Machines Corporation Copper interconnection structure incorporating a metal seed layer
US6197683B1 (en) * 1997-09-29 2001-03-06 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same
US6200893B1 (en) * 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6207302B1 (en) * 1997-03-04 2001-03-27 Denso Corporation Electroluminescent device and method of producing the same
US6207487B1 (en) * 1998-10-13 2001-03-27 Samsung Electronics Co., Ltd. Method for forming dielectric film of capacitor having different thicknesses partly
US20010000866A1 (en) * 1999-03-11 2001-05-10 Ofer Sneh Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6242808B1 (en) * 1998-04-09 2001-06-05 Fujitsu Limited Semiconductor device with copper wiring and semiconductor device manufacturing method
US6251759B1 (en) * 1998-10-03 2001-06-26 Applied Materials, Inc. Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system
US6335240B1 (en) * 1998-01-06 2002-01-01 Samsung Electronics Co., Ltd. Capacitor for a semiconductor device and method for forming the same
US20020000598A1 (en) * 1999-12-08 2002-01-03 Sang-Bom Kang Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors
US20020007790A1 (en) * 2000-07-22 2002-01-24 Park Young-Hoon Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US6348376B2 (en) * 1997-09-29 2002-02-19 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
US20020020869A1 (en) * 1999-12-22 2002-02-21 Ki-Seon Park Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof
US20020021544A1 (en) * 2000-08-11 2002-02-21 Hag-Ju Cho Integrated circuit devices having dielectric regions protected with multi-layer insulation structures and methods of fabricating same
US6358829B2 (en) * 1998-09-17 2002-03-19 Samsung Electronics Company., Ltd. Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer
US6372598B2 (en) * 1998-06-16 2002-04-16 Samsung Electronics Co., Ltd. Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same
US20020048635A1 (en) * 1998-10-16 2002-04-25 Kim Yeong-Kwan Method for manufacturing thin film
US20020052097A1 (en) * 2000-06-24 2002-05-02 Park Young-Hoon Apparatus and method for depositing thin film on wafer using atomic layer deposition
US20020051152A1 (en) * 2000-03-31 2002-05-02 Tsutomu Kurose Method of and apparatus for distinguishing type of pixel
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US20020068458A1 (en) * 2000-12-06 2002-06-06 Chiang Tony P. Method for integrated in-situ cleaning and susequent atomic layer deposition within a single processing chamber
US20020076481A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Chamber pressure state-based control for a reactor
US20020073924A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Gas introduction system for a reactor
US20020074588A1 (en) * 2000-12-20 2002-06-20 Kyu-Mann Lee Ferroelectric capacitors for integrated circuit memory devices and methods of manufacturing same
US20030013320A1 (en) * 2001-05-31 2003-01-16 Samsung Electronics Co., Ltd. Method of forming a thin film using atomic layer deposition
US20030013300A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US20030015764A1 (en) * 2001-06-21 2003-01-23 Ivo Raaijmakers Trench isolation for integrated circuit
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US20030024600A1 (en) * 2001-05-26 2003-02-06 Wen-Chi Chang Hollow chisel mortiser with a rotor for adjusting a working angle of the mortiser
US20030031807A1 (en) * 1999-10-15 2003-02-13 Kai-Erik Elers Deposition of transition metal carbides
US20030032281A1 (en) * 2000-03-07 2003-02-13 Werkhoven Christiaan J. Graded thin films
US20030042630A1 (en) * 2001-09-05 2003-03-06 Babcoke Jason E. Bubbler for gas delivery
US20030049942A1 (en) * 2001-08-31 2003-03-13 Suvi Haukka Low temperature gate stack
US20030049931A1 (en) * 2001-09-19 2003-03-13 Applied Materials, Inc. Formation of refractory metal nitrides using chemisorption techniques
US20030053799A1 (en) * 2001-09-14 2003-03-20 Lei Lawrence C. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US20030054631A1 (en) * 2000-05-15 2003-03-20 Ivo Raaijmakers Protective layers prior to alternating layer deposition
US20030059538A1 (en) * 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US20030057526A1 (en) * 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US20030057527A1 (en) * 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US6548424B2 (en) * 2000-04-14 2003-04-15 Asm Microchemistry Oy Process for producing oxide thin films
US20030072884A1 (en) * 2001-10-15 2003-04-17 Applied Materials, Inc. Method of titanium and titanium nitride layer deposition
US20030072975A1 (en) * 2001-10-02 2003-04-17 Shero Eric J. Incorporation of nitrogen into high k dielectric film
US6551929B1 (en) * 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US20030082300A1 (en) * 2001-02-12 2003-05-01 Todd Michael A. Improved Process for Deposition of Semiconductor Films
US20030082301A1 (en) * 2001-10-26 2003-05-01 Applied Materials, Inc. Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US20030082296A1 (en) * 2001-09-14 2003-05-01 Kai Elers Metal nitride deposition by ALD with reduction pulse
US20030089942A1 (en) * 2001-11-09 2003-05-15 Micron Technology, Inc. Scalable gate and storage dielectric
US20030097013A1 (en) * 2001-11-16 2003-05-22 Applied Materials, Inc. Nitrogen analogs of copper II beta-diketonates as source reagents for semiconductor processing
US20030096468A1 (en) * 2000-05-15 2003-05-22 Soininen Pekka J. Method of growing electrical conductors
US6569501B2 (en) * 2000-12-06 2003-05-27 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20040009307A1 (en) * 2000-06-08 2004-01-15 Won-Yong Koh Thin film forming method
US20040011504A1 (en) * 2002-07-17 2004-01-22 Ku Vincent W. Method and apparatus for gas temperature control in a semiconductor processing system
US20040014320A1 (en) * 2002-07-17 2004-01-22 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US20040013803A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Formation of titanium nitride films using a cyclical deposition process
US20040015300A1 (en) * 2002-07-22 2004-01-22 Seshadri Ganguli Method and apparatus for monitoring solid precursor delivery
US20040018747A1 (en) * 2002-07-20 2004-01-29 Lee Jung-Hyun Deposition method of a dielectric layer
US20040016866A1 (en) * 2002-07-25 2004-01-29 Veutron Corporation Light source control method and apparatus of image scanner
US20040018304A1 (en) * 2002-07-10 2004-01-29 Applied Materials, Inc. Method of film deposition using activated precursor gases
US20040018723A1 (en) * 2000-06-27 2004-01-29 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US20040028952A1 (en) * 2002-06-10 2004-02-12 Interuniversitair Microelektronica Centrum (Imec Vzw) High dielectric constant composition and method of making same
US6693030B1 (en) * 1997-12-30 2004-02-17 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
US20040033698A1 (en) * 2002-08-17 2004-02-19 Lee Yun-Jung Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same
US20040043630A1 (en) * 2002-08-28 2004-03-04 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
US20040046197A1 (en) * 2002-05-16 2004-03-11 Cem Basceri MIS capacitor and method of formation
US20040048491A1 (en) * 2002-09-10 2004-03-11 Hyung-Suk Jung Post thermal treatment methods of forming high dielectric layers in integrated circuit devices
US20040053484A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Method of fabricating a gate structure of a field effect transistor using a hard mask

Family Cites Families (486)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US213987A (en) * 1879-04-08 Improvement in bevels
US124262A (en) * 1872-03-05 Improvement in oscillating-swings
US14320A (en) * 1856-02-26 Process of painting or varnishing woven wire
US86507A (en) * 1869-02-02 Improvement in whip-sockets
US31807A (en) * 1861-03-26 Improved culinary boiler
US187256A (en) * 1877-02-13 Improvement in windmills
US622893A (en) * 1899-04-11 Electric igniter for gas-engines
US224600A (en) * 1880-02-17 Steam-trap
US224578A (en) * 1880-02-17 Fence-post driver
US172872A (en) * 1876-02-01 Improvement in colters
US3291456A (en) 1964-07-01 1966-12-13 Combustion Eng Self-agitating, stabilized flow mixing vessel
FI52359C (en) 1974-11-29 1977-08-10 Instrumentarium Oy A method and apparatus for increasing compound thin films.
FI57975C (en) 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande at uppbyggande and the arrangement of the thin foereningshinnor
US4415275A (en) 1981-12-21 1983-11-15 Dietrich David E Swirl mixing device
FI64878C (en) 1982-05-10 1984-01-10 Lohja Ab Oy Kombinationsfilm Foer isynnerhet tunnfilmelektroluminensstrukturer
US4732110A (en) * 1983-04-29 1988-03-22 Hughes Aircraft Company Inverted positive vertical flow chemical vapor deposition reactor chamber
US5294286A (en) * 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
JPH0766910B2 (en) * 1984-07-26 1995-07-19 新技術事業団 Semiconductor single crystal growth apparatus
GB2162207B (en) 1984-07-26 1989-05-10 Hitoshi Abe Semiconductor crystal growth apparatus
US5693139A (en) 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
US4614639A (en) * 1985-04-26 1986-09-30 Tegal Corporation Compound flow plasma reactor
US5250148A (en) 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
WO1987003740A1 (en) 1985-12-09 1987-06-18 Nippon Telegraph And Telephone Corporation Process for forming thin film of compound semiconductor
US4917556A (en) * 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
US4761269A (en) 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4838983A (en) 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4767494A (en) 1986-07-04 1988-08-30 Nippon Telegraph & Telephone Corporation Preparation process of compound semiconductor
JPH0834180B2 (en) 1986-08-26 1996-03-29 セイコー電子工業株式会社 Method of growing a compound semiconductor thin film
JPH0639357B2 (en) 1986-09-08 1994-05-25 セイコ電子工業株式会社 Method of growing element semiconductor single crystal thin film
US5246536A (en) 1986-09-08 1993-09-21 Research Development Corporation Of Japan Method for growing single crystal thin films of element semiconductor
JP2587623B2 (en) 1986-11-22 1997-03-05 三洋電機株式会社 Compound semiconductor epitaxial crystal growth method
JP2929291B2 (en) 1986-12-04 1999-08-03 セイコーインスツルメンツ株式会社 Method of manufacturing the insulated gate field effect transistor
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
US5923985A (en) 1987-01-05 1999-07-13 Seiko Instruments Inc. MOS field effect transistor and its manufacturing method
DE3704505A1 (en) * 1987-02-13 1988-08-25 Leybold Ag Einlegegeraet for vacuum systems
JPH0517696B2 (en) * 1987-03-17 1993-03-09 Fujitsu Ltd
JPH0812844B2 (en) 1987-03-27 1996-02-07 日本電気株式会社 ▲ iii ▼ -v group compound semiconductor and a method of forming
JPH0727861B2 (en) 1987-03-27 1995-03-29 富士通株式会社 ▲ iii ▼ - ▲ v ▼ growth method of group compound semiconductor crystal
US5348911A (en) 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
DE3721637A1 (en) 1987-06-30 1989-01-12 Aixtron Gmbh Gas inlet for a plurality of different reactive gases in reaktionsgefaesse
US4840921A (en) 1987-07-01 1989-06-20 Nec Corporation Process for the growth of III-V group compound semiconductor crystal on a Si substrate
JPH0666274B2 (en) 1987-07-01 1994-08-24 日本電気株式会社 ▲ iii ▼ -v compound semiconductor method of forming
FI81926C (en) 1987-09-29 1990-12-10 Nokia Oy Ab Foerfarande Foer uppbyggning of GaAs-filmer pao inner Science GaAs substrater.
US4991542A (en) * 1987-10-14 1991-02-12 The Furukawa Electric Co., Ltd. Method of forming a thin film by plasma CVD and apapratus for forming a thin film
DE3743938C2 (en) * 1987-12-23 1995-08-31 Cs Halbleiter Solartech A process for atomic layer epitaxial growth of a III / V compound semiconductor thin film
FR2626110A1 (en) 1988-01-19 1989-07-21 Thomson Csf Process for producing a layer of a superconductive material by epitaxy
US5166092A (en) 1988-01-28 1992-11-24 Fujitsu Limited Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
US5229081A (en) * 1988-02-12 1993-07-20 Regal Joint Co., Ltd. Apparatus for semiconductor process including photo-excitation process
FR2628985B1 (en) 1988-03-22 1990-12-28 Labo Electronique Physique An epitaxial reactor wall is protected against deposits
US5130269A (en) * 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
US5261959A (en) 1988-05-26 1993-11-16 General Electric Company Diamond crystal growth apparatus
DE3851701T2 (en) 1988-06-03 1995-03-30 Ibm A process for the production of artificial high-temperature superconductors having a multilayered structure.
US4927670A (en) 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5234561A (en) 1988-08-25 1993-08-10 Hauzer Industries Bv Physical vapor deposition dual coating process
US4931132A (en) 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
US4917566A (en) * 1988-11-17 1990-04-17 Contractors Crane Service, Inc. Crane attachment for backhoe
US4907534A (en) * 1988-12-09 1990-03-13 Siemens Aktiengesellschaft Gas distributor for OMVPE Growth
US5013683A (en) 1989-01-23 1991-05-07 The Regents Of The University Of California Method for growing tilted superlattices
JPH0824191B2 (en) 1989-03-17 1996-03-06 富士通株式会社 Thin film transistor
US5186718A (en) * 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US4987856A (en) * 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
EP0413982B1 (en) 1989-07-27 1997-05-14 Junichi Nishizawa Impurity doping method with adsorbed diffusion source
JP2506451B2 (en) 1989-08-18 1996-06-12 富士通株式会社 Chemical vapor deposition apparatus and chemical vapor deposition
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
JP2926798B2 (en) 1989-11-20 1999-07-28 国際電気株式会社 Continuous processing etching method and apparatus
CA2031253A1 (en) 1989-12-01 1991-06-02 Kenji Aoki Method of producing bipolar transistor
FI84562C (en) 1990-01-16 1991-12-27 Neste Oy Foerfarande and the arrangement of the Foer framstaellning heterogena katalysatorer.
US5290748A (en) * 1990-01-16 1994-03-01 Neste Oy Polymerization catalyst for olefines
US5338389A (en) 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
US5532511A (en) 1992-10-23 1996-07-02 Research Development Corp. Of Japan Semiconductor device comprising a highspeed static induction transistor
JPH07105497B2 (en) * 1990-01-31 1995-11-13 徹 倉林 Semiconductor device and manufacturing method thereof
JP2822536B2 (en) 1990-02-14 1998-11-11 住友電気工業株式会社 Method of forming cubic boron nitride thin film
US5316615A (en) 1990-03-23 1994-05-31 International Business Machines Corporation Surfactant-enhanced epitaxy
JPH042699A (en) * 1990-04-18 1992-01-07 Mitsubishi Electric Corp Growing of crystal
US5173474A (en) 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same
US5091320A (en) * 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
DE4027628A1 (en) * 1990-08-31 1992-03-05 Wolters Peter Fa A device for control or regulation of lapping, honing or polishing machines
US5085887A (en) * 1990-09-07 1992-02-04 Applied Materials, Inc. Wafer reactor vessel window with pressure-thermal compensation
US5085885A (en) 1990-09-10 1992-02-04 University Of Delaware Plasma-induced, in-situ generation, transport and use or collection of reactive precursors
EP0491521B1 (en) * 1990-12-15 1997-03-12 Fujitsu Limited Process for producing diamond film
US5286296A (en) * 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
US5178681A (en) 1991-01-29 1993-01-12 Applied Materials, Inc. Suspension system for semiconductor reactors
US5204145A (en) * 1991-03-04 1993-04-20 General Electric Company Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom
US5705224A (en) * 1991-03-20 1998-01-06 Kokusai Electric Co., Ltd. Vapor depositing method
US5259881A (en) 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
US5224513A (en) * 1991-06-04 1993-07-06 Cselt - Centro Studi E Laboratori Telecomunicazioni S.P.A. Device for introducing reagents into an organometallic vapor phase deposition apparatus
US5173327A (en) 1991-06-18 1992-12-22 Micron Technology, Inc. LPCVD process for depositing titanium films for semiconductor devices
US5270247A (en) 1991-07-12 1993-12-14 Fujitsu Limited Atomic layer epitaxy of compound semiconductor
FI87892C (en) 1991-07-16 1993-03-10 Neste Oy Foerfarande Foer framstaellning of heterogena katalysatorer with oenskad metallhalt
US6001669A (en) 1991-09-09 1999-12-14 Philips Electronics North America Corporation Method for producing II-VI compound semiconductor epitaxial layers having low defects
US5311055A (en) 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
JP2987379B2 (en) 1991-11-30 1999-12-06 徹 倉林 Epitaxial growth method of a semiconductor crystal
US5336324A (en) 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
JP2763222B2 (en) * 1991-12-13 1998-06-11 三菱電機株式会社 Chemical vapor deposition method and chemical vapor deposition processing system and a chemical vapor deposition apparatus therefor
US5397428A (en) 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
US5256244A (en) 1992-02-10 1993-10-26 General Electric Company Production of diffuse reflective coatings by atomic layer epitaxy
JP2987663B2 (en) * 1992-03-10 1999-12-06 株式会社日立製作所 The substrate processing apparatus
US5458084A (en) 1992-04-16 1995-10-17 Moxtek, Inc. X-ray wave diffraction optics constructed by atomic layer epitaxy
DE69328929T2 (en) * 1992-05-22 2000-11-02 Minnesota Mining & Mfg II-VI laser diodes by atomlagen- and migrationsverstaerkte epitaxial grown quantum wells
US5285885A (en) * 1992-05-29 1994-02-15 Fishburne International, Inc. Tobacco container sorting conveyor
US5278435A (en) * 1992-06-08 1994-01-11 Apa Optics, Inc. High responsivity ultraviolet gallium nitride detector
FI91422C (en) 1992-06-18 1994-06-27 Mikrokemia Oy A method and apparatus for supplying liquid reagents to a chemical reactor
US5316793A (en) 1992-07-27 1994-05-31 Texas Instruments Incorporated Directed effusive beam atomic layer epitaxy system and method
JPH0750690B2 (en) 1992-08-21 1995-05-31 日本電気株式会社 Epitaxial growth method and apparatus of a semiconductor crystal used halide
US5338362A (en) 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
US5381485A (en) * 1992-08-29 1995-01-10 Adaptive Control Limited Active sound control systems and sound reproduction systems
JP3405466B2 (en) * 1992-09-17 2003-05-12 富士通株式会社 Apparatus for producing a fluid switching valve and a semiconductor device
US5455072A (en) 1992-11-18 1995-10-03 Bension; Rouvain M. Initiation and bonding of diamond and other thin films
JPH06177349A (en) * 1992-12-02 1994-06-24 Matsushita Electric Ind Co Ltd High density dram and manufacture thereof
US5607009A (en) 1993-01-28 1997-03-04 Applied Materials, Inc. Method of heating and cooling large area substrates and apparatus therefor
JP3265042B2 (en) 1993-03-18 2002-03-11 東京エレクトロン株式会社 Film formation method
JP3124861B2 (en) 1993-03-24 2001-01-15 富士通株式会社 Method for manufacturing a thin film growth method and a semiconductor device
US5443647A (en) 1993-04-28 1995-08-22 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for depositing a refractory thin film by chemical vapor deposition
US5330610A (en) 1993-05-28 1994-07-19 Martin Marietta Energy Systems, Inc. Method of digital epilaxy by externally controlled closed-loop feedback
JPH0729897A (en) 1993-06-25 1995-01-31 Nec Corp Manufacture of semiconductor device
US5643366A (en) 1994-01-31 1997-07-01 Applied Materials, Inc. Wafer handling within a vacuum chamber using vacuum
US6130147A (en) 1994-04-07 2000-10-10 Sdl, Inc. Methods for forming group III-V arsenide-nitride semiconductor materials
JP3181171B2 (en) * 1994-05-20 2001-07-03 シャープ株式会社 Vapor deposition apparatus and a vapor phase growth method
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5916395A (en) * 1994-07-05 1999-06-29 Murata Manufacturing Co., Ltd. Method for fabricating ceramic electronic parts
JP3008782B2 (en) 1994-07-15 2000-02-14 信越半導体株式会社 Vapor-phase growth method and apparatus
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
US5695564A (en) 1994-08-19 1997-12-09 Tokyo Electron Limited Semiconductor processing system
US5641984A (en) 1994-08-19 1997-06-24 General Electric Company Hermetically sealed radiation imager
US5730801A (en) * 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5644128A (en) 1994-08-25 1997-07-01 Ionwerks Fast timing position sensitive detector
US6158446A (en) 1994-11-14 2000-12-12 Fsi International Ultra-low particle semiconductor cleaner
JPH08148431A (en) 1994-11-24 1996-06-07 Mitsubishi Electric Corp Mbe apparatus and gas branch-piping apparatus
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
WO1996018756A1 (en) 1994-12-16 1996-06-20 Nkt Research Center A/S A PA-CVD PROCESS FOR DEPOSITION OF A SOLID METAL-CONTAINING FILM ONTO A SUBSTRATE CONTAINING AT LEAST 50 % of Fe or WC
US5542452A (en) * 1995-02-07 1996-08-06 Cdc Technologies, Inc. Valve assembly
DE69625265D1 (en) * 1995-03-28 2003-01-23 Texas Instruments Inc Semiconductor structures
JPH08288965A (en) 1995-04-18 1996-11-01 Hitachi Ltd Switching system
US5573566A (en) * 1995-05-26 1996-11-12 Advanced Semiconductor Materials America, Inc. Method of making a quartz dome reactor chamber
US5919332A (en) * 1995-06-07 1999-07-06 Tokyo Electron Limited Plasma processing apparatus
JP3288200B2 (en) * 1995-06-09 2002-06-04 バリアンセミコンダクターイクイップメント株式会社 Vacuum processing apparatus
JPH0922896A (en) 1995-07-07 1997-01-21 Toshiba Corp Method of selective forming of metal film
DE69636286D1 (en) * 1995-07-10 2006-08-03 Applied Materials Inc A plasma assisted chemical reactor and process
WO1997003223A1 (en) * 1995-07-10 1997-01-30 Watkins Johnson Company Gas distribution apparatus
KR0167248B1 (en) 1995-07-24 1999-02-01 문정환 Heat treatment of substrate
KR100244041B1 (en) 1995-08-05 2000-02-01 엔도 마코토 Substrate processing apparatus
US5804488A (en) 1995-08-24 1998-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a tungsten silicide capacitor having a high breakdown voltage
US5672054A (en) 1995-12-07 1997-09-30 Carrier Corporation Rotary compressor with reduced lubrication sensitivity
US6084302A (en) * 1995-12-26 2000-07-04 Micron Technologies, Inc. Barrier layer cladding around copper interconnect lines
US6174509B1 (en) * 1997-02-11 2001-01-16 Corning Incorporated Pure fused silica, furnace and method
FI107533B (en) 1996-04-03 2001-08-31 Fortum Oil & Gas Oy The functional surfaces and a process for their preparation for the performance of chemical reactions,
US6140237A (en) 1997-06-16 2000-10-31 Chartered Semiconductor Manufacturing Ltd. Damascene process for forming coplanar top surface of copper connector isolated by barrier layers in an insulating layer
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
US5906683A (en) 1996-04-16 1999-05-25 Applied Materials, Inc. Lid assembly for semiconductor processing chamber
US6313035B1 (en) * 1996-05-31 2001-11-06 Micron Technology, Inc. Chemical vapor deposition using organometallic precursors
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
US6062798A (en) 1996-06-13 2000-05-16 Brooks Automation, Inc. Multi-level substrate processing apparatus
US6534133B1 (en) * 1996-06-14 2003-03-18 Research Foundation Of State University Of New York Methodology for in-situ doping of aluminum coatings
US5996528A (en) * 1996-07-02 1999-12-07 Novellus Systems, Inc. Method and apparatus for flowing gases into a manifold at high potential
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
CA2210892C (en) * 1996-07-26 2006-03-21 Boc Gases Australia Limited Oxygen dissolver for pipelines or pipe outlets
US5747113A (en) * 1996-07-29 1998-05-05 Tsai; Charles Su-Chang Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US5830270A (en) 1996-08-05 1998-11-03 Lockheed Martin Energy Systems, Inc. CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
JP3901252B2 (en) * 1996-08-13 2007-04-04 キヤノンアネルバ株式会社 Chemical vapor deposition apparatus
JP2923753B2 (en) * 1996-08-21 1999-07-26 工業技術院長 Method of forming Iii group atoms layer
KR100216542B1 (en) 1996-08-27 1999-08-16 정선종 Multi-target driving apparatus for pulse laser depositing system
FI100758B (en) 1996-09-11 1998-02-13 Planar Internat Oy Ltd Process for the ZnS: Mn phosphor layer to increase the ohutkalvoelektrol for uminenssikomponentteja
US5951771A (en) 1996-09-30 1999-09-14 Celestech, Inc. Plasma jet system
US5835677A (en) 1996-10-03 1998-11-10 Emcore Corporation Liquid vaporizer system and method
US5923056A (en) * 1996-10-10 1999-07-13 Lucent Technologies Inc. Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials
US6071572A (en) 1996-10-15 2000-06-06 Applied Materials, Inc. Forming tin thin films using remote activated specie generation
US5882411A (en) 1996-10-21 1999-03-16 Applied Materials, Inc. Faceplate thermal choke in a CVD plasma reactor
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US5807792A (en) 1996-12-18 1998-09-15 Siemens Aktiengesellschaft Uniform distribution of reactants in a device layer
US6335280B1 (en) * 1997-01-13 2002-01-01 Asm America, Inc. Tungsten silicide deposition process
US6051286A (en) 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
DE19706789C2 (en) * 1997-02-20 1999-10-21 Siemens Ag CMOS circuit having dielectrically isolated partially source-drain regions, and methods for their preparation
DE19707929C1 (en) * 1997-02-27 1998-09-03 Schroff Gmbh Cabinet for receiving electrical and electronic components
US5855675A (en) * 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5866795A (en) * 1997-03-17 1999-02-02 Applied Materials, Inc. Liquid flow rate estimation and verification by direct liquid measurement
US6153519A (en) 1997-03-31 2000-11-28 Motorola, Inc. Method of forming a barrier layer
US5888303A (en) * 1997-04-07 1999-03-30 R.E. Dixon Inc. Gas inlet apparatus and method for chemical vapor deposition reactors
KR100469047B1 (en) * 1997-04-11 2005-01-31 동경 엘렉트론 주식회사 Processing System, Upper Electrode Unit and Method of Use of an Upper Electrode, and Electrode Unit and Method of Manufacturing the Electrode unit
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
WO1998052219A1 (en) 1997-05-14 1998-11-19 Applied Materials, Inc. Reliability barrier integration for cu metallisation
US6156382A (en) 1997-05-16 2000-12-05 Applied Materials, Inc. Chemical vapor deposition process for depositing tungsten
US5851849A (en) 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
US5846330A (en) * 1997-06-26 1998-12-08 Celestech, Inc. Gas injection disc assembly for CVD applications
US6162715A (en) 1997-06-30 2000-12-19 Applied Materials, Inc. Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
US6309713B1 (en) 1997-06-30 2001-10-30 Applied Materials, Inc. Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
FI972874A0 (en) 1997-07-04 1997-07-04 Mikrokemia Oy Foerfarande and the arrangement of the Foer framstaellning tunnfilmer
US5882413A (en) * 1997-07-11 1999-03-16 Brooks Automation, Inc. Substrate processing apparatus having a substrate transport with a front end extension and an internal substrate buffer
US6073366A (en) 1997-07-11 2000-06-13 Asm America, Inc. Substrate cooling system and method
US5904565A (en) 1997-07-17 1999-05-18 Sharp Microelectronics Technology, Inc. Low resistance contact between integrated circuit metal levels and method for same
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100269306B1 (en) 1997-07-31 2000-10-16 윤종용 Integrate circuit device having buffer layer containing metal oxide stabilized by low temperature treatment and fabricating method thereof
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
KR100261017B1 (en) 1997-08-19 2000-08-01 윤종용 Method for forming metal wiring of semiconductor device
US5879459A (en) * 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US5904569A (en) 1997-09-03 1999-05-18 National Semiconductor Corporation Method for forming self-aligned vias in multi-metal integrated circuits
US5801634A (en) 1997-09-08 1998-09-01 Sony Corporation Signal tower controller
KR100274603B1 (en) 1997-10-01 2001-01-15 윤종용 Method and apparatus for fabricating semiconductor device
JPH11117071A (en) * 1997-10-09 1999-04-27 Anelva Corp Cvd device
US6110556A (en) 1997-10-17 2000-08-29 Applied Materials, Inc. Lid assembly for a process chamber employing asymmetric flow geometries
KR100252049B1 (en) 1997-11-18 2000-04-15 윤종용 The atomic layer deposition method for fabricating aluminum layer
US5972430A (en) 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
JP3550985B2 (en) * 1997-12-02 2004-08-04 株式会社デンソー Verification method of the neural network, the verification apparatus and a recording medium
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6099904A (en) 1997-12-02 2000-08-08 Applied Materials, Inc. Low resistivity W using B2 H6 nucleation step
FI104383B (en) 1997-12-09 2000-01-14 Fortum Oil & Gas Oy The method for coating the inner surfaces of equipment
GB2332980B (en) 1997-12-31 2002-06-12 Samsung Electronics Co Ltd A method for forming a conductive layer using an atomic layer deposition process
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6117244A (en) 1998-03-24 2000-09-12 Applied Materials, Inc. Deposition resistant lining for CVD chamber
US6316098B1 (en) 1998-03-27 2001-11-13 Yissum Research Development Company Of The Hebrew University Of Jerusalem Molecular layer epitaxy method and compositions
JP2002509925A (en) 1998-03-31 2002-04-02 ワーナー−ランバート・カンパニー Benzoxazinone / benzothiazinone as serine protease inhibitors
JPH11297681A (en) * 1998-04-07 1999-10-29 Mitsubishi Electric Corp Cvd apparatus for forming high permittivity thin film and method of forming high permittivity thin film
US6433314B1 (en) 1998-04-08 2002-08-13 Applied Materials, Inc. Direct temperature control for a component of a substrate processing chamber
EP0959149A3 (en) 1998-05-18 2002-07-24 IPS Ltd Apparatus for depositing thin films
KR100267885B1 (en) * 1998-05-18 2000-11-01 서성기 Deposition apparatus
US6025627A (en) * 1998-05-29 2000-02-15 Micron Technology, Inc. Alternate method and structure for improved floating gate tunneling devices
FI105313B (en) 1998-06-03 2000-07-14 Planar Systems Oy The method of growing a thin-film elektroluminesenssirakenteiden
NL1009327C2 (en) 1998-06-05 1999-12-10 Asm Int Method and device for the transfer of wafers.
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6333260B1 (en) 1998-06-24 2001-12-25 Samsung Electronics Co., Ltd. Semiconductor device having improved metal line structure and manufacturing method therefor
US6218302B1 (en) * 1998-07-21 2001-04-17 Motorola Inc. Method for forming a semiconductor device
US6358323B1 (en) 1998-07-21 2002-03-19 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in a substrate processing system
KR100275738B1 (en) 1998-08-07 2000-12-15 윤종용 Method for producing thin film using atomatic layer deposition
KR100327105B1 (en) 1998-08-14 2002-03-09 오길록 High luminance-phosphor and method for fabricating the same
US6291876B1 (en) 1998-08-20 2001-09-18 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with composite atomic barrier film and process for making same
FI105643B (en) 1998-08-21 2000-09-15 Planar Systems Oy A thin-film electroluminescent device and a method for its preparation
US6520218B1 (en) * 1998-09-03 2003-02-18 Advanced Technology Materials, Inc. Container chemical guard
KR20000022003A (en) 1998-09-10 2000-04-25 이경수 Method for forming three-components compound comprising metal and silicon
FI108375B (en) 1998-09-11 2002-01-15 Asm Microchemistry Oy preparing Menetelmõ eristõvien oksidiohutkalvojen
KR100273474B1 (en) 1998-09-14 2000-12-15 이경수 Gas supply apparatus of chemical vapor deposition apparatus
US6143082A (en) 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6445701B1 (en) * 1998-10-09 2002-09-03 Microsoft Corporation Channel access scheme for use in network communications
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6409904B1 (en) * 1998-12-01 2002-06-25 Nutool, Inc. Method and apparatus for depositing and controlling the texture of a thin film
KR100331544B1 (en) 1999-01-18 2002-04-06 윤종용 Method for introducing gases into a reactor chamber and a shower head used therein
JP2995300B1 (en) 1999-02-03 1999-12-27 工業技術院長 Surface improving method of machine components
US6087726A (en) * 1999-03-01 2000-07-11 Lsi Logic Corporation Metal interconnect stack for integrated circuit structure
US6540838B2 (en) 2000-11-29 2003-04-01 Genus, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US20020000665A1 (en) * 1999-04-05 2002-01-03 Alexander L. Barr Semiconductor device conductive bump and interconnect barrier
KR100273473B1 (en) 1999-04-06 2000-11-15 이경수 Method for forming a thin film
JP2000290777A (en) * 1999-04-07 2000-10-17 Tokyo Electron Ltd Gas treating device, buffle member, and gas treating method
JP2000319773A (en) 1999-04-30 2000-11-21 Shindengen Electric Mfg Co Ltd Production of selenium layer in x-ray detector
KR100347379B1 (en) * 1999-05-01 2002-08-07 주식회사 피케이엘 Atomic layer deposition apparatus for depositing multi substrate
FI118342B (en) 1999-05-10 2007-10-15 Asm Int Device for producing thin films
KR100670618B1 (en) * 1999-05-11 2007-01-17 어플라이드 머티어리얼스, 인코포레이티드 Sequential sputter and reactive precleans of vias and contacts
US6218298B1 (en) 1999-05-19 2001-04-17 Infineon Technologies North America Corp. Tungsten-filled deep trenches
JP2000340883A (en) 1999-05-27 2000-12-08 Fujitsu Ltd Multiwavelength oscillating optical semiconductor device
US6254602B1 (en) 1999-05-28 2001-07-03 Sdgi Holdings, Inc. Advanced coupling device using shape-memory technology
US6124158A (en) 1999-06-08 2000-09-26 Lucent Technologies Inc. Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants
JP2000353666A (en) 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd Semiconductor thin film and manufacture thereof
US6539891B1 (en) 1999-06-19 2003-04-01 Genitech, Inc. Chemical deposition reactor and method of forming a thin film using the same
US6071808A (en) 1999-06-23 2000-06-06 Lucent Technologies Inc. Method of passivating copper interconnects in a semiconductor
JP2003502878A (en) 1999-06-24 2003-01-21 ナーハ ガジル、プラサード Atomic layer chemical vapor deposition apparatus
US6524952B1 (en) * 1999-06-25 2003-02-25 Applied Materials, Inc. Method of forming a titanium silicide layer on a substrate
US6309964B1 (en) * 1999-07-08 2001-10-30 Taiwan Semiconductor Manufacturing Company Method for forming a copper damascene structure over tungsten plugs with improved adhesion, oxidation resistance, and diffusion barrier properties using nitridation of the tungsten plug
KR100319494B1 (en) 1999-07-15 2002-01-09 김용일 Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process
US6328871B1 (en) 1999-08-16 2001-12-11 Applied Materials, Inc. Barrier layer for electroplating processes
KR200167993Y1 (en) 1999-08-17 2000-02-15 박함규 A supplying device for an upper thread of an embroidery-frame
US6984415B2 (en) * 1999-08-20 2006-01-10 International Business Machines Corporation Delivery systems for gases for gases via the sublimation of solid precursors
EP1081751A3 (en) * 1999-09-02 2003-03-19 Applied Materials, Inc. Methods of pre-cleaning dielectric layers of substrates
JP2003508218A (en) 1999-09-03 2003-03-04 アーベーベー フレークト アクチェボラーグ Removing from the introduction and surface treatment zone of the surface treatment zone of the workpiece, the surface treatment device and surface treating apparatus
US6184138B1 (en) * 1999-09-07 2001-02-06 Chartered Semiconductor Manufacturing Ltd. Method to create a controllable and reproducible dual copper damascene structure
US6383330B1 (en) 1999-09-10 2002-05-07 Asm America, Inc. Quartz wafer processing chamber
US6610151B1 (en) 1999-10-02 2003-08-26 Uri Cohen Seed layers for interconnects and methods and apparatus for their fabrication
DE10049257B4 (en) 1999-10-06 2015-05-13 Samsung Electronics Co., Ltd. A process for thin film formation by means of atomic layer deposition
FI117942B (en) 1999-10-14 2007-04-30 Asm Int The method of growing oksidiohutkalvojen
FI118158B (en) 1999-10-15 2007-07-31 Asm Int Process for the modification of precursor chemicals in an ALD litigation
FI117944B (en) 1999-10-15 2007-04-30 Asm Int The method of growing siirtymämetallinitridiohutkalvojen
EP1220834B1 (en) 1999-10-15 2003-08-20 Lonza AG Method for the production of cyanoacetic acid esters
WO2001029280A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Deposition of transition metal carbides
JP5173098B2 (en) 1999-10-15 2013-03-27 エーエスエム インターナショナル エヌ.ヴェー.Asm International N.V. Conformal lining layer for damascene metallization
EP1221178A1 (en) 1999-10-15 2002-07-10 ASM America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
KR100304714B1 (en) 1999-10-20 2001-11-02 윤종용 Method for fabricating metal layer of semiconductor device using metal-halide gas
KR100714378B1 (en) 1999-10-25 2007-05-07 프리스케일 세미컨덕터, 인크. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6548112B1 (en) 1999-11-18 2003-04-15 Tokyo Electron Limited Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber
KR20010047128A (en) 1999-11-18 2001-06-15 이경수 Method of vaporizing a liquid source and apparatus used therefor
US6558509B2 (en) * 1999-11-30 2003-05-06 Applied Materials, Inc. Dual wafer load lock
US6780704B1 (en) 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
FI118804B (en) 1999-12-03 2008-03-31 Asm Int The method of growing oxide films
KR100364257B1 (en) * 1999-12-06 2002-12-11 삼성전자 주식회사 Tungsten Chemical Vapor Deposition Method And Tungsten Plug Forming Method
KR100330749B1 (en) 1999-12-17 2002-04-03 서성기 Thin film deposition apparatus for semiconductor
KR100624903B1 (en) 1999-12-22 2006-09-19 주식회사 하이닉스반도체 Method of manufacturing a capacitor in a semiconductor device
FI118474B (en) 1999-12-28 2007-11-30 Asm Int Device for producing thin films
FI118343B (en) 1999-12-28 2007-10-15 Asm Int Device for producing thin films
KR100390951B1 (en) * 1999-12-29 2003-07-10 주식회사 하이닉스반도체 Method of forming copper wiring in a semiconductor device
FI20000099A0 (en) 2000-01-18 2000-01-18 Asm Microchemistry Ltd The method of growing metal thin films
US6277249B1 (en) * 2000-01-21 2001-08-21 Applied Materials Inc. Integrated process for copper via filling using a magnetron and target producing highly energetic ions
JP4776054B2 (en) 2000-02-04 2011-09-21 株式会社デンソー Thin film forming method by atomic layer deposition
KR100378871B1 (en) 2000-02-16 2003-04-07 주식회사 아펙스 showerhead apparatus for radical assisted deposition
US6492283B2 (en) 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
JP4211185B2 (en) 2000-02-29 2009-01-21 株式会社デンソー Cvd, ale apparatus for a glass substrate storage jig
JP4556282B2 (en) 2000-03-31 2010-10-06 株式会社デンソー Organic el device and manufacturing method thereof
US7060132B2 (en) 2000-04-14 2006-06-13 Asm International N.V. Method and apparatus of growing a thin film
FI117980B (en) 2000-04-14 2007-05-15 Asm Int The method of growing a thin film on the substrate
FI117978B (en) 2000-04-14 2007-05-15 Asm Int Method and apparatus for growing thin film on the substrate
JP2001303251A (en) 2000-04-20 2001-10-31 Samsung Electronics Co Ltd Method for manufacturing barrier metal film utilizing atomic layer deposition method
JP2001328900A (en) 2000-05-15 2001-11-27 Denso Corp Method for forming thin film
FI118805B (en) 2000-05-15 2008-03-31 Asm Int The method and composition of vapor-phase reactants into the reactor chamber
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
KR100427423B1 (en) * 2000-05-25 2004-04-13 가부시키가이샤 고베 세이코쇼 Inner tube for cvd apparatus
KR100403611B1 (en) * 2000-06-07 2003-11-01 삼성전자주식회사 Metal-insulator-metal capacitor and manufacturing method thereof
KR100647442B1 (en) 2000-06-07 2006-11-17 주성엔지니어링(주) Method of forming a thin film using atomic layer deposition
US7253076B1 (en) 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
KR100387255B1 (en) * 2000-06-20 2003-06-11 주식회사 하이닉스반도체 Method of forming a metal wiring in a semiconductor device
US6852168B2 (en) * 2000-06-24 2005-02-08 Ips Ltd. Reactor for depositing thin film on wafer
US6818250B2 (en) * 2000-06-29 2004-11-16 The Regents Of The University Of Colorado Method for forming SIO2 by chemical vapor deposition at room temperature
US6585823B1 (en) 2000-07-07 2003-07-01 Asm International, N.V. Atomic layer deposition
US6592942B1 (en) 2000-07-07 2003-07-15 Asm International N.V. Method for vapour deposition of a film onto a substrate
FI20001694A0 (en) 2000-07-20 2000-07-20 Asm Microchemistry Oy The method of growing a thin film on the substrate
US6368954B1 (en) * 2000-07-28 2002-04-09 Advanced Micro Devices, Inc. Method of copper interconnect formation using atomic layer copper deposition
KR100630666B1 (en) 2000-08-09 2006-10-02 삼성전자주식회사 Method of manufacturing semiconductor device including metal contact and capacitor
US6302965B1 (en) 2000-08-15 2001-10-16 Applied Materials, Inc. Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
JP4013022B2 (en) 2000-09-13 2007-11-28 日産自動車株式会社 Jet pump
JP4304854B2 (en) * 2000-09-21 2009-07-29 宇部興産株式会社 Multilayer polyimide films and laminates
DE10064944A1 (en) * 2000-09-22 2002-04-11 Aixtron Ag A method for depositing in particular crystalline layers, gas inlet element, and device for carrying out the method
US6685823B2 (en) * 2000-10-16 2004-02-03 Uniroyal Chemical Company, Inc. C-nitrosoaniline compounds and their blends as polymerization inhibitors
US6428847B1 (en) * 2000-10-16 2002-08-06 Primaxx, Inc. Vortex based CVD reactor
US6498091B1 (en) 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
KR100436941B1 (en) 2000-11-07 2004-06-23 주성엔지니어링(주) apparatus and method for depositing thin film
US6355561B1 (en) 2000-11-21 2002-03-12 Micron Technology, Inc. ALD method to improve surface coverage
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
EP1340269B1 (en) * 2000-11-30 2009-02-25 Asm International N.V. Thin films for magnetic devices
KR100386034B1 (en) 2000-12-06 2003-06-02 에이에스엠 마이크로케미스트리 리미티드 Method of Fabricating Semiconductor Device Employing Copper Interconnect Structure Having Diffusion Barrier Stuffed with Metal Oxide
US7348042B2 (en) 2001-03-19 2008-03-25 Novellus Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6416822B1 (en) 2000-12-06 2002-07-09 Angstrom Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
WO2002045871A9 (en) 2000-12-06 2004-04-15 Angstron Systems Inc System and method for modulated ion-induced atomic layer deposition (mii-ald)
KR100385947B1 (en) 2000-12-06 2003-06-02 삼성전자주식회사 Method of forming thin film by atomic layer deposition
US20020197402A1 (en) 2000-12-06 2002-12-26 Chiang Tony P. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6878402B2 (en) 2000-12-06 2005-04-12 Novellus Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
US20020104481A1 (en) 2000-12-06 2002-08-08 Chiang Tony P. System and method for modulated ion-induced atomic layer deposition (MII-ALD)
US6368950B1 (en) * 2000-12-12 2002-04-09 Advanced Micro Devices, Inc. Silicide gate transistors
US20020144657A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. ALD reactor employing electrostatic chuck
US6630201B2 (en) * 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US20020144655A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. Gas valve system for a reactor
US6800173B2 (en) 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US20020076507A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
US20020076537A1 (en) * 2000-12-16 2002-06-20 Unipac Optoelectronics Corporation Laminated structure
JP3963078B2 (en) 2000-12-25 2007-08-22 株式会社高純度化学研究所 Method of forming a tertiary amyl imido-tris (dimethylamide) tantalum and their preparation and mocvd raw material solution and the tantalum nitride film using the same using the same
KR20020056260A (en) * 2000-12-29 2002-07-10 박종섭 Method for forming metal gate of semiconductor devoie
US20020086111A1 (en) * 2001-01-03 2002-07-04 Byun Jeong Soo Method of forming refractory metal nitride layers using chemisorption techniques
US20020127336A1 (en) 2001-01-16 2002-09-12 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
KR100400031B1 (en) 2001-01-17 2003-09-29 삼성전자주식회사 Contact plug of semiconductor device and method of forming the same
KR100434487B1 (en) 2001-01-17 2004-06-05 삼성전자주식회사 Shower head & film forming apparatus having the same
JP2002222934A (en) 2001-01-29 2002-08-09 Nec Corp Semiconductor device and manufacturing method thereof
US6951804B2 (en) * 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6844604B2 (en) 2001-02-02 2005-01-18 Samsung Electronics Co., Ltd. Dielectric layer for semiconductor device and method of manufacturing the same
KR100400033B1 (en) 2001-02-08 2003-09-29 삼성전자주식회사 Semiconductor device having multi-interconnection structure and manufacturing method thereof
KR100395766B1 (en) 2001-02-12 2003-08-25 삼성전자주식회사 Ferroelectric memory device and method of forming the same
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US20020117399A1 (en) 2001-02-23 2002-08-29 Applied Materials, Inc. Atomically thin highly resistive barrier layer in a copper via
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US20020121241A1 (en) 2001-03-02 2002-09-05 Nguyen Anh N. Processing chamber and method of distributing process fluids therein to facilitate sequential deposition of films
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
FI109770B (en) * 2001-03-16 2002-10-15 Asm Microchemistry Oy Process for the preparation, the metal
US6369430B1 (en) 2001-04-02 2002-04-09 Motorola, Inc. Method of preventing two neighboring contacts from a short-circuit caused by a void between them and device having the same
DE60220230D1 (en) 2001-04-02 2007-07-05 Matsushita Electric Ind Co Ltd Manufacturing method of a semiconductor device
US6561498B2 (en) 2001-04-09 2003-05-13 Lorex Industries, Inc. Bubbler for use in vapor generation systems
US6420189B1 (en) 2001-04-27 2002-07-16 Advanced Micro Devices, Inc. Superconducting damascene interconnected for integrated circuit
US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6447933B1 (en) 2001-04-30 2002-09-10 Advanced Micro Devices, Inc. Formation of alloy material using alternating depositions of alloy doping element and bulk material
KR100363332B1 (en) 2001-05-23 2002-11-20 Samsung Electronics Co Ltd Method for forming semiconductor device having gate all-around type transistor
US6528884B1 (en) * 2001-06-01 2003-03-04 Advanced Micro Devices, Inc. Conformal atomic liner layer in an integrated circuit interconnect
DE10128573A1 (en) 2001-06-13 2003-01-02 Infineon Technologies Ag Prevent the undesired external detection of operations in integrated digital circuits
US6686278B2 (en) * 2001-06-19 2004-02-03 United Microelectronics Corp. Method for forming a plug metal layer
US6849545B2 (en) 2001-06-20 2005-02-01 Applied Materials, Inc. System and method to form a composite film stack utilizing sequential deposition techniques
JP4680429B2 (en) * 2001-06-26 2011-05-11 Okiセミコンダクタ株式会社 Fast reading control method in a text-to-speech conversion system
DE60203912T2 (en) 2001-07-03 2006-02-16 Asm International N.V. A container assembly for chemicals
US20030198754A1 (en) 2001-07-16 2003-10-23 Ming Xi Aluminum oxide chamber and process
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7105444B2 (en) 2001-07-19 2006-09-12 Samsung Electronics Co., Ltd. Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
US7098131B2 (en) 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US7081409B2 (en) 2002-07-17 2006-07-25 Samsung Electronics Co., Ltd. Methods of producing integrated circuit devices utilizing tantalum amine derivatives
US20030017697A1 (en) * 2001-07-19 2003-01-23 Kyung-In Choi Methods of forming metal layers using metallic precursors
US20030029715A1 (en) * 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
WO2003030224A3 (en) 2001-07-25 2004-02-19 Applied Materials Inc Barrier formation using novel sputter-deposition method
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US6548906B2 (en) * 2001-08-22 2003-04-15 Agere Systems Inc. Method for reducing a metal seam in an interconnect structure and a device manufactured thereby
US6635544B2 (en) 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
KR20030025494A (en) 2001-09-21 2003-03-29 삼성전자주식회사 Semiconductor device having contact between ruthenium layer and metal layer and method for manufacturing the same
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6797108B2 (en) 2001-10-05 2004-09-28 Applied Materials, Inc. Apparatus and method for evenly flowing processing gas onto a semiconductor wafer
WO2003031679B1 (en) 2001-10-10 2004-05-13 Applied Materials Inc Method for depositing metal layers employing sequential deposition techniques
US6828002B2 (en) 2001-10-12 2004-12-07 Advanced Semiconductor Engineering, Inc. Substrate strip with sides having flanges and recesses
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US20080102203A1 (en) * 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US20080102208A1 (en) * 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US7780789B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
WO2003038145A3 (en) 2001-10-29 2003-07-31 Ken Doering Chemical vapor deposition system
US6423619B1 (en) 2001-11-30 2002-07-23 Motorola, Inc. Transistor metal gate structure that minimizes non-planarity effects and method of formation
US6773507B2 (en) * 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6729824B2 (en) * 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6939801B2 (en) 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
US20030116087A1 (en) * 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
US6560111B1 (en) * 2001-12-28 2003-05-06 Fang Tien Huang Bracket for CPU cooler
US6674138B1 (en) 2001-12-31 2004-01-06 Advanced Micro Devices, Inc. Use of high-k dielectric materials in modified ONO structure for semiconductor devices
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
WO2003065424A3 (en) 2002-01-25 2004-03-11 Applied Materials Inc Apparatus for cyclical deposition of thin films
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6998014B2 (en) * 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6824816B2 (en) 2002-01-29 2004-11-30 Asm International N.V. Process for producing metal thin films by ALD
US7063981B2 (en) 2002-01-30 2006-06-20 Asm International N.V. Active pulse monitoring in a chemical reactor
US6777352B2 (en) 2002-02-11 2004-08-17 Applied Materials, Inc. Variable flow deposition apparatus and method in semiconductor substrate processing
US6972267B2 (en) * 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6753618B2 (en) 2002-03-11 2004-06-22 Micron Technology, Inc. MIM capacitor with metal nitride electrode materials and method of formation
US20030216981A1 (en) 2002-03-12 2003-11-20 Michael Tillman Method and system for hosting centralized online point-of-sale activities for a plurality of distributed customers and vendors
US6996585B2 (en) 2002-03-22 2006-02-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method for version recording and tracking
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US6932871B2 (en) 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6778762B1 (en) 2002-04-17 2004-08-17 Novellus Systems, Inc. Sloped chamber top for substrate processing
US20030235961A1 (en) 2002-04-17 2003-12-25 Applied Materials, Inc. Cyclical sequential deposition of multicomponent films
US6659543B2 (en) 2002-04-18 2003-12-09 9110-3309 Quebec Inc. Convertible bench and table assembly
US20030213560A1 (en) 2002-05-16 2003-11-20 Yaxin Wang Tandem wafer processing system and process
KR100505043B1 (en) 2002-05-25 2005-07-29 삼성전자주식회사 Method for forming a capacitor
US7910165B2 (en) 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7404985B2 (en) 2002-06-04 2008-07-29 Applied Materials, Inc. Noble metal layer formation for copper film deposition
US7264846B2 (en) 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7041335B2 (en) 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US7067439B2 (en) * 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
KR100476926B1 (en) * 2002-07-02 2005-03-17 삼성전자주식회사 Method for forming dual gate of semiconductor device
CN1643322A (en) 2002-07-15 2005-07-20 阿维扎技术公司 Heat treatment system and formable vertical chamber
US7524374B2 (en) 2002-07-17 2009-04-28 Applied Materials, Inc. Method and apparatus for generating a precursor for a semiconductor processing system
CN1795290B (en) 2003-05-27 2010-06-16 应用材料股份有限公司 Method and apparatus for generating a precursor for a semiconductor processing system
US7066194B2 (en) * 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US7300038B2 (en) * 2002-07-23 2007-11-27 Advanced Technology Materials, Inc. Method and apparatus to help promote contact of gas with vaporized material
US6921062B2 (en) * 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US6915592B2 (en) * 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US7222636B2 (en) 2002-08-20 2007-05-29 Applied Materials, Inc. Electronically actuated valve
US6790773B1 (en) 2002-08-28 2004-09-14 Novellus Systems, Inc. Process for forming barrier/seed structures for integrated circuits
JP3925360B2 (en) * 2002-08-30 2007-06-06 ブリヂストンスポーツ株式会社 Golf club head
US6784096B2 (en) 2002-09-11 2004-08-31 Applied Materials, Inc. Methods and apparatus for forming barrier layers in high aspect ratio vias
JP2004111447A (en) * 2002-09-13 2004-04-08 Handotai Rikougaku Kenkyu Center:Kk Semiconductor device and method for manufacturing the same
US6946033B2 (en) 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
US20040065255A1 (en) 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20040069227A1 (en) 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US6716287B1 (en) 2002-10-18 2004-04-06 Applied Materials Inc. Processing chamber with flow-restricting ring
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
WO2004064147A3 (en) 2003-01-07 2004-09-02 Applied Materials Inc Integration of ald/cvd barriers with porous low k materials
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US6818094B2 (en) 2003-01-29 2004-11-16 Applied Materials, Inc. Reciprocating gas valve for pulsing a gas
US6994319B2 (en) * 2003-01-29 2006-02-07 Applied Materials, Inc. Membrane gas valve for pulsing a gas
US6868859B2 (en) 2003-01-29 2005-03-22 Applied Materials, Inc. Rotary gas valve for pulsing a gas
US7442415B2 (en) 2003-04-11 2008-10-28 Sharp Laboratories Of America, Inc. Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films
US20050070126A1 (en) 2003-04-21 2005-03-31 Yoshihide Senzaki System and method for forming multi-component dielectric films
JP2007514293A (en) 2003-04-21 2007-05-31 アヴィザ テクノロジー インコーポレイテッド System and method for forming a multi-component dielectric layer
US6919250B2 (en) * 2003-05-21 2005-07-19 Advanced Micro Devices, Inc. Multiple-gate MOS device and method for making the same
US6911093B2 (en) 2003-06-02 2005-06-28 Lsi Logic Corporation Lid liner for chemical vapor deposition chamber
US6881437B2 (en) 2003-06-16 2005-04-19 Blue29 Llc Methods and system for processing a microelectronic topography
JP2007523994A (en) * 2003-06-18 2007-08-23 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Atomic layer deposition of the barrier material
JP4087323B2 (en) 2003-09-25 2008-05-21 株式会社東芝 A liquid tank and a fuel cell
US7408225B2 (en) * 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US20050104142A1 (en) 2003-11-13 2005-05-19 Vijav Narayanan CVD tantalum compounds for FET get electrodes
US20050153571A1 (en) 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
US6983892B2 (en) * 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US7067422B2 (en) 2004-03-31 2006-06-27 Tokyo Electron Limited Method of forming a tantalum-containing gate electrode structure
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US20060019033A1 (en) * 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US20060062917A1 (en) 2004-05-21 2006-03-23 Shankar Muthukrishnan Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane
US20060153995A1 (en) 2004-05-21 2006-07-13 Applied Materials, Inc. Method for fabricating a dielectric stack
US7241686B2 (en) * 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
JP2008521261A (en) 2004-11-22 2008-06-19 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated The substrate processing apparatus using a batch processing chamber
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US7265048B2 (en) 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US7317229B2 (en) * 2005-07-20 2008-01-08 Applied Materials, Inc. Gate electrode structures and methods of manufacture
US20070019371A1 (en) * 2005-07-22 2007-01-25 E-Lead Electronic Co., Ltd. Multimedia display device attached to a sunroof of vehicles
US7464917B2 (en) 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
KR101019293B1 (en) 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 Apparatus and process for plasma-enhanced atomic layer deposition
DE102006014996A1 (en) 2006-03-31 2007-10-04 Robert Bosch Gmbh Method for operating an Otto engine with direct fuel injection comprises passing and leaving residual gas in the combustion chamber using an internal and external exhaust gas re-circulating unit

Patent Citations (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372598B1 (en) *
US6181012B2 (en) *
US28924A (en) * 1860-06-26 Vapor-lamp
US31618A (en) * 1861-03-05 Water-elevator
US41250A (en) * 1864-01-12 Improvement in burning, roasting,, and smelting ores
US54769A (en) * 1866-05-15 Iiviproveivient in churn-dashers
US76507A (en) * 1868-04-07 Egbert o br
US76837A (en) * 1868-04-14 John somerville and egbert elsdon
US4389973A (en) * 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5483919A (en) * 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
US5281485A (en) * 1990-10-26 1994-01-25 International Business Machines Corporation Structure and method of making Alpha-Ta in thin films
US5221449A (en) * 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
US5480818A (en) * 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
US5306666A (en) * 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
US5526244A (en) * 1993-05-24 1996-06-11 Bishop; Vernon R. Overhead luminaire
US5711811A (en) * 1994-11-28 1998-01-27 Mikrokemia Oy Method and equipment for growing thin films
US5855680A (en) * 1994-11-28 1999-01-05 Neste Oy Apparatus for growing thin films
US6015590A (en) * 1994-11-28 2000-01-18 Neste Oy Method for growing thin films
US20020041931A1 (en) * 1994-11-28 2002-04-11 Tuomo Suntola Method for growing thin films
US6066358A (en) * 1995-11-21 2000-05-23 Applied Materials, Inc. Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US6043177A (en) * 1997-01-21 2000-03-28 University Technology Corporation Modification of zeolite or molecular sieve membranes using atomic layer controlled chemical vapor deposition
US5913147A (en) * 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US6207302B1 (en) * 1997-03-04 2001-03-27 Denso Corporation Electroluminescent device and method of producing the same
US6197683B1 (en) * 1997-09-29 2001-03-06 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same
US6348376B2 (en) * 1997-09-29 2002-02-19 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
US6693030B1 (en) * 1997-12-30 2004-02-17 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
US6174809B1 (en) * 1997-12-31 2001-01-16 Samsung Electronics, Co., Ltd. Method for forming metal layer using atomic layer deposition
US6335240B1 (en) * 1998-01-06 2002-01-01 Samsung Electronics Co., Ltd. Capacitor for a semiconductor device and method for forming the same
US6015917A (en) * 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6379748B1 (en) * 1998-01-23 2002-04-30 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
US6242808B1 (en) * 1998-04-09 2001-06-05 Fujitsu Limited Semiconductor device with copper wiring and semiconductor device manufacturing method
US6181012B1 (en) * 1998-04-27 2001-01-30 International Business Machines Corporation Copper interconnection structure incorporating a metal seed layer
US6372598B2 (en) * 1998-06-16 2002-04-16 Samsung Electronics Co., Ltd. Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same
US6358829B2 (en) * 1998-09-17 2002-03-19 Samsung Electronics Company., Ltd. Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer
US6251759B1 (en) * 1998-10-03 2001-06-26 Applied Materials, Inc. Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system
US6207487B1 (en) * 1998-10-13 2001-03-27 Samsung Electronics Co., Ltd. Method for forming dielectric film of capacitor having different thicknesses partly
US20020048635A1 (en) * 1998-10-16 2002-04-25 Kim Yeong-Kwan Method for manufacturing thin film
US20010000866A1 (en) * 1999-03-11 2001-05-10 Ofer Sneh Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6200893B1 (en) * 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
US20010002280A1 (en) * 1999-03-11 2001-05-31 Ofer Sneh Radical-assisted sequential CVD
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US20030089308A1 (en) * 1999-09-08 2003-05-15 Ivo Raaijmakers Apparatus and method for growth of a thin film
US20030031807A1 (en) * 1999-10-15 2003-02-13 Kai-Erik Elers Deposition of transition metal carbides
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US20020000598A1 (en) * 1999-12-08 2002-01-03 Sang-Bom Kang Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors
US20020020869A1 (en) * 1999-12-22 2002-02-21 Ki-Seon Park Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof
US20030032281A1 (en) * 2000-03-07 2003-02-13 Werkhoven Christiaan J. Graded thin films
US6534395B2 (en) * 2000-03-07 2003-03-18 Asm Microchemistry Oy Method of forming graded thin films using alternating pulses of vapor phase reactants
US20020051152A1 (en) * 2000-03-31 2002-05-02 Tsutomu Kurose Method of and apparatus for distinguishing type of pixel
US6548424B2 (en) * 2000-04-14 2003-04-15 Asm Microchemistry Oy Process for producing oxide thin films
US20030054631A1 (en) * 2000-05-15 2003-03-20 Ivo Raaijmakers Protective layers prior to alternating layer deposition
US20030096468A1 (en) * 2000-05-15 2003-05-22 Soininen Pekka J. Method of growing electrical conductors
US6686271B2 (en) * 2000-05-15 2004-02-03 Asm International N.V. Protective layers prior to alternating layer deposition
US20040009307A1 (en) * 2000-06-08 2004-01-15 Won-Yong Koh Thin film forming method
US20020052097A1 (en) * 2000-06-24 2002-05-02 Park Young-Hoon Apparatus and method for depositing thin film on wafer using atomic layer deposition
US20040018723A1 (en) * 2000-06-27 2004-01-29 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US6551929B1 (en) * 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US20020007790A1 (en) * 2000-07-22 2002-01-24 Park Young-Hoon Atomic layer deposition (ALD) thin film deposition equipment having cleaning apparatus and cleaning method
US20020021544A1 (en) * 2000-08-11 2002-02-21 Hag-Ju Cho Integrated circuit devices having dielectric regions protected with multi-layer insulation structures and methods of fabricating same
US6569501B2 (en) * 2000-12-06 2003-05-27 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20020068458A1 (en) * 2000-12-06 2002-06-06 Chiang Tony P. Method for integrated in-situ cleaning and susequent atomic layer deposition within a single processing chamber
US20020076481A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Chamber pressure state-based control for a reactor
US20020073924A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Gas introduction system for a reactor
US20020074588A1 (en) * 2000-12-20 2002-06-20 Kyu-Mann Lee Ferroelectric capacitors for integrated circuit memory devices and methods of manufacturing same
US20030082300A1 (en) * 2001-02-12 2003-05-01 Todd Michael A. Improved Process for Deposition of Semiconductor Films
US20030024600A1 (en) * 2001-05-26 2003-02-06 Wen-Chi Chang Hollow chisel mortiser with a rotor for adjusting a working angle of the mortiser
US20030013320A1 (en) * 2001-05-31 2003-01-16 Samsung Electronics Co., Ltd. Method of forming a thin film using atomic layer deposition
US20030015764A1 (en) * 2001-06-21 2003-01-23 Ivo Raaijmakers Trench isolation for integrated circuit
US20030013300A1 (en) * 2001-07-16 2003-01-16 Applied Materials, Inc. Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
US20030049942A1 (en) * 2001-08-31 2003-03-13 Suvi Haukka Low temperature gate stack
US20030042630A1 (en) * 2001-09-05 2003-03-06 Babcoke Jason E. Bubbler for gas delivery
US20030082296A1 (en) * 2001-09-14 2003-05-01 Kai Elers Metal nitride deposition by ALD with reduction pulse
US20030053799A1 (en) * 2001-09-14 2003-03-20 Lei Lawrence C. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US20030049931A1 (en) * 2001-09-19 2003-03-13 Applied Materials, Inc. Formation of refractory metal nitrides using chemisorption techniques
US20030057527A1 (en) * 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US20030057526A1 (en) * 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US20030059538A1 (en) * 2001-09-26 2003-03-27 Applied Materials, Inc. Integration of barrier layer and seed layer
US20030072975A1 (en) * 2001-10-02 2003-04-17 Shero Eric J. Incorporation of nitrogen into high k dielectric film
US20030072884A1 (en) * 2001-10-15 2003-04-17 Applied Materials, Inc. Method of titanium and titanium nitride layer deposition
US20030079686A1 (en) * 2001-10-26 2003-05-01 Ling Chen Gas delivery apparatus and method for atomic layer deposition
US20030082301A1 (en) * 2001-10-26 2003-05-01 Applied Materials, Inc. Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US20030089942A1 (en) * 2001-11-09 2003-05-15 Micron Technology, Inc. Scalable gate and storage dielectric
US20030097013A1 (en) * 2001-11-16 2003-05-22 Applied Materials, Inc. Nitrogen analogs of copper II beta-diketonates as source reagents for semiconductor processing
US20040046197A1 (en) * 2002-05-16 2004-03-11 Cem Basceri MIS capacitor and method of formation
US20040028952A1 (en) * 2002-06-10 2004-02-12 Interuniversitair Microelektronica Centrum (Imec Vzw) High dielectric constant composition and method of making same
US20040018304A1 (en) * 2002-07-10 2004-01-29 Applied Materials, Inc. Method of film deposition using activated precursor gases
US20040013803A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Formation of titanium nitride films using a cyclical deposition process
US20040011504A1 (en) * 2002-07-17 2004-01-22 Ku Vincent W. Method and apparatus for gas temperature control in a semiconductor processing system
US20040014320A1 (en) * 2002-07-17 2004-01-22 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US20040018747A1 (en) * 2002-07-20 2004-01-29 Lee Jung-Hyun Deposition method of a dielectric layer
US20040015300A1 (en) * 2002-07-22 2004-01-22 Seshadri Ganguli Method and apparatus for monitoring solid precursor delivery
US20040016866A1 (en) * 2002-07-25 2004-01-29 Veutron Corporation Light source control method and apparatus of image scanner
US20040033698A1 (en) * 2002-08-17 2004-02-19 Lee Yun-Jung Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same
US20040043630A1 (en) * 2002-08-28 2004-03-04 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
US20040048491A1 (en) * 2002-09-10 2004-03-11 Hyung-Suk Jung Post thermal treatment methods of forming high dielectric layers in integrated circuit devices
US20040053484A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Method of fabricating a gate structure of a field effect transistor using a hard mask

Cited By (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7670945B2 (en) 1998-10-01 2010-03-02 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US6831004B2 (en) 2000-06-27 2004-12-14 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7709385B2 (en) 2000-06-28 2010-05-04 Applied Materials, Inc. Method for depositing tungsten-containing layers by vapor deposition techniques
US7745333B2 (en) 2000-06-28 2010-06-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7846840B2 (en) 2000-06-28 2010-12-07 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7674715B2 (en) 2000-06-28 2010-03-09 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US20020036780A1 (en) * 2000-09-27 2002-03-28 Hiroaki Nakamura Image processing apparatus
US20040197492A1 (en) * 2001-05-07 2004-10-07 Applied Materials, Inc. CVD TiSiN barrier for copper integration
US8563424B2 (en) 2001-07-25 2013-10-22 Applied Materials, Inc. Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US9209074B2 (en) 2001-07-25 2015-12-08 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US8187970B2 (en) 2001-07-25 2012-05-29 Applied Materials, Inc. Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US8668776B2 (en) 2001-10-26 2014-03-11 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US8318266B2 (en) 2001-10-26 2012-11-27 Applied Materials, Inc. Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US8293328B2 (en) 2001-10-26 2012-10-23 Applied Materials, Inc. Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US20080041313A1 (en) * 2001-10-26 2008-02-21 Ling Chen Gas delivery apparatus for atomic layer deposition
US20030082301A1 (en) * 2001-10-26 2003-05-01 Applied Materials, Inc. Enhanced copper growth with ultrathin barrier layer for high performance interconnects
US7780788B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US7699023B2 (en) * 2001-10-26 2010-04-20 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US7892602B2 (en) 2001-12-07 2011-02-22 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US20030108674A1 (en) * 2001-12-07 2003-06-12 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US7732325B2 (en) 2002-01-26 2010-06-08 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US7745329B2 (en) 2002-02-26 2010-06-29 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US20030224600A1 (en) * 2002-03-04 2003-12-04 Wei Cao Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7867896B2 (en) 2002-03-04 2011-01-11 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7867914B2 (en) 2002-04-16 2011-01-11 Applied Materials, Inc. System and method for forming an integrated barrier layer
US20040018304A1 (en) * 2002-07-10 2004-01-29 Applied Materials, Inc. Method of film deposition using activated precursor gases
US20040013577A1 (en) * 2002-07-17 2004-01-22 Seshadri Ganguli Method and apparatus for providing gas to a processing chamber
US8062422B2 (en) 2002-07-17 2011-11-22 Applied Materials, Inc. Method and apparatus for generating a precursor for a semiconductor processing system
US20040014320A1 (en) * 2002-07-17 2004-01-22 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7678194B2 (en) 2002-07-17 2010-03-16 Applied Materials, Inc. Method for providing gas to a processing chamber
US20050189072A1 (en) * 2002-07-17 2005-09-01 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US6905541B2 (en) * 2002-07-17 2005-06-14 Applied Materials, Inc. Method and apparatus of generating PDMAT precursor
US7524374B2 (en) 2002-07-17 2009-04-28 Applied Materials, Inc. Method and apparatus for generating a precursor for a semiconductor processing system
US20090151633A1 (en) * 2002-07-17 2009-06-18 Ling Chen Method and apparatus for generating a precursor for a semiconductor processing system
US7368382B2 (en) 2002-08-15 2008-05-06 Micron Technology, Inc. Atomic layer deposition methods
US20080241386A1 (en) * 2002-08-15 2008-10-02 Micron Technology, Inc. Atomic Layer Deposition Methods
US20060205227A1 (en) * 2002-08-15 2006-09-14 Demetrius Sarigiannis Atomic layer deposition methods
US20060205228A1 (en) * 2002-08-15 2006-09-14 Demetrius Sarigiannis Atomic layer deposition methods
US20040224527A1 (en) * 2002-08-15 2004-11-11 Micron Technology, Inc. Atomic layer deposition methods
US7378354B2 (en) 2002-08-15 2008-05-27 Micron Technology, Inc. Atomic layer deposition methods
US7303991B2 (en) * 2002-08-15 2007-12-04 Micron Technology, Inc. Atomic layer deposition methods
US20080274299A1 (en) * 2002-11-14 2008-11-06 Ling Chen Apparatus and method for hybrid chemical processing
US8070879B2 (en) * 2002-11-14 2011-12-06 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7591907B2 (en) * 2002-11-14 2009-09-22 Applied Materials, Inc. Apparatus for hybrid chemical processing
US7402210B2 (en) * 2002-11-14 2008-07-22 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US20090308318A1 (en) * 2002-11-14 2009-12-17 Ling Chen Apparatus and method for hybrid chemical processing
US20040144311A1 (en) * 2002-11-14 2004-07-29 Ling Chen Apparatus and method for hybrid chemical processing
US20040256351A1 (en) * 2003-01-07 2004-12-23 Hua Chung Integration of ALD/CVD barriers with porous low k materials
US20040175926A1 (en) * 2003-03-07 2004-09-09 Advanced Micro Devices, Inc. Method for manufacturing a semiconductor component having a barrier-lined opening
WO2004106584A1 (en) * 2003-05-27 2004-12-09 Applied Materials, Inc. Method and apparatus for generating a precursor for a semiconductor processing system
US20050009325A1 (en) * 2003-06-18 2005-01-13 Hua Chung Atomic layer deposition of barrier materials
US20050037613A1 (en) * 2003-08-14 2005-02-17 Stephan Grunow Diffusion barrier for copper lines in integrated circuits
EP1507289A2 (en) * 2003-08-14 2005-02-16 Texas Instruments Incorporated Diffusion barrier for copper lines in integrated circuits
EP1507289A3 (en) * 2003-08-14 2005-03-23 Texas Instruments Incorporated Diffusion barrier for copper lines in integrated circuits
US8282992B2 (en) 2004-05-12 2012-10-09 Applied Materials, Inc. Methods for atomic layer deposition of hafnium-containing high-K dielectric materials
US8343279B2 (en) 2004-05-12 2013-01-01 Applied Materials, Inc. Apparatuses for atomic layer deposition
US7794544B2 (en) 2004-05-12 2010-09-14 Applied Materials, Inc. Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
KR101170860B1 (en) * 2004-06-30 2012-08-02 인텔 코포레이션 Atomic layer deposited tantalum containing adhesion layer
KR101205072B1 (en) * 2004-06-30 2012-11-26 인텔 코포레이션 Atomic layer deposited tantalum containing adhesion layer
US7691742B2 (en) 2004-07-20 2010-04-06 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
US20060019495A1 (en) * 2004-07-20 2006-01-26 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata
US20090202710A1 (en) * 2004-07-20 2009-08-13 Christophe Marcadal Atomic layer deposition of tantalum-containing materials using the tantalum precursor taimata
US7429402B2 (en) * 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US20060128150A1 (en) * 2004-12-10 2006-06-15 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
US9359672B2 (en) * 2005-01-18 2016-06-07 Asm America, Inc. Reaction system for growing a thin film
US20120266821A1 (en) * 2005-01-18 2012-10-25 Asm America, Inc. Reaction system for growing a thin film
US7265048B2 (en) 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US8796142B2 (en) 2005-03-03 2014-08-05 Ulvac, Inc. Method for forming tantalum nitride film
US20090104775A1 (en) * 2005-03-03 2009-04-23 Narishi Gonohe Method for Forming Tantalum Nitride Film
US20060246699A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Process for electroless copper deposition on a ruthenium seed
US7651934B2 (en) 2005-03-18 2010-01-26 Applied Materials, Inc. Process for electroless copper deposition
US20060211224A1 (en) * 2005-03-21 2006-09-21 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US8486845B2 (en) * 2005-03-21 2013-07-16 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US20070054046A1 (en) * 2005-09-06 2007-03-08 Tokyo Electron Limited Method of forming a tantalum-containing layer from a metalorganic precursor
US20070054047A1 (en) * 2005-09-06 2007-03-08 Tokyo Electron Limited Method of forming a tantalum-containing layer from a metalorganic precursor
US7682946B2 (en) 2005-11-04 2010-03-23 Applied Materials, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US9032906B2 (en) 2005-11-04 2015-05-19 Applied Materials, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7850779B2 (en) 2005-11-04 2010-12-14 Applied Materisals, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20080085611A1 (en) * 2006-10-09 2008-04-10 Amit Khandelwal Deposition and densification process for titanium nitride barrier layers
US20090280640A1 (en) * 2006-10-09 2009-11-12 Applied Materials Incorporated Deposition and densification process for titanium nitride barrier layers
US7838441B2 (en) 2006-10-09 2010-11-23 Applied Materials, Inc. Deposition and densification process for titanium nitride barrier layers
US20080099933A1 (en) * 2006-10-31 2008-05-01 Choi Kenric T Ampoule for liquid draw and vapor draw with a continous level sensor
US7775508B2 (en) 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
US7678298B2 (en) 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US20090078916A1 (en) * 2007-09-25 2009-03-26 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US20090081868A1 (en) * 2007-09-25 2009-03-26 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US20090087585A1 (en) * 2007-09-28 2009-04-02 Wei Ti Lee Deposition processes for titanium nitride barrier and aluminum
US8778079B2 (en) * 2007-10-11 2014-07-15 Valence Process Equipment, Inc. Chemical vapor deposition reactor
US20120111271A1 (en) * 2007-10-11 2012-05-10 Begarney Michael J Chemical vapor deposition reactor
US20100062149A1 (en) * 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US9418890B2 (en) 2008-09-08 2016-08-16 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8491967B2 (en) * 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US20100120245A1 (en) * 2008-11-07 2010-05-13 Agus Sofian Tjandra Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
US20110026297A1 (en) * 2009-07-30 2011-02-03 Art Talent Industrial Limited Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory device
US8107274B2 (en) * 2009-07-30 2012-01-31 Chrong-Jung Lin Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory device
US20110175233A1 (en) * 2010-01-19 2011-07-21 Akira Ueki Semiconductor device and method for fabricating the same
US8835308B2 (en) * 2010-12-21 2014-09-16 Applied Materials, Inc. Methods for depositing materials in high aspect ratio features
US20120156872A1 (en) * 2010-12-21 2012-06-21 Applied Materials, Inc. Methods for depositing materials in high aspect ratio features
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US8911826B2 (en) * 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US20160329238A1 (en) * 2014-02-26 2016-11-10 Lam Research Corporation Inhibitor plasma mediated atomic layer deposition for seamless feature fill
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap

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