US20030043157A1 - Photonic MEMS and structures - Google Patents

Photonic MEMS and structures Download PDF

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Publication number
US20030043157A1
US20030043157A1 US10/224,029 US22402902A US2003043157A1 US 20030043157 A1 US20030043157 A1 US 20030043157A1 US 22402902 A US22402902 A US 22402902A US 2003043157 A1 US2003043157 A1 US 2003043157A1
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Prior art keywords
substrate
light
optical
imod
fabricated
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US10/224,029
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US7110158B2 (en
Inventor
Mark Miles
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Iridigm Display Corp
SnapTrack Inc
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Iridigm Display Corp
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Priority claimed from US09/413,222 external-priority patent/US7123216B1/en
Application filed by Iridigm Display Corp filed Critical Iridigm Display Corp
Priority to US10/224,029 priority Critical patent/US7110158B2/en
Publication of US20030043157A1 publication Critical patent/US20030043157A1/en
Assigned to IDC, LLC reassignment IDC, LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IRIDIGM DISPLAY CORPORATION
Assigned to IRIDIGM DISPLAY CORPORATION reassignment IRIDIGM DISPLAY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MILES, MARK W., ETALON, INC.
Assigned to ETALON, INC. reassignment ETALON, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MILES, MARK W.
Publication of US7110158B2 publication Critical patent/US7110158B2/en
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Assigned to QUALCOMM MEMS TECHNOLOGIES, INC. reassignment QUALCOMM MEMS TECHNOLOGIES, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: IDC,LLC
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Assigned to SNAPTRACK, INC. reassignment SNAPTRACK, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: QUALCOMM MEMS TECHNOLOGIES, INC.
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Definitions

  • This invention relates to interferometric modulation.
  • Interferometric modulators modulate incident light by the manipulation of the optical properties of a micromechanical device. This is accomplished by altering the device's interferometric characteristics using a variety of techniques. IMods lend themselves to a number of applications ranging from flat panels displays and optical computing to fiberoptic modulators and projection displays. The different applications can be addressed using different IMod designs.
  • the invention features an IMod based display that incorporates anti-reflection coatings and/or micro-fabricated supplemental lighting sources.
  • the invention features an efficient drive scheme for matrix addressed arrays of IMods or other micromechanical devices.
  • the invention features a color scheme that provides a greater flexibility.
  • the invention features electronic hardware that can be field reconfigured to accommodate different display formats and/or application functions.
  • the invention features an IMod design that decouples the IMod's electromechanical behavior from the IMod's optical behavior.
  • the invention features an IMod design with alternative actuation means, some one of which may be hidden from view.
  • the invention features an IMod or IMod array that is fabricated and used in conjunction with a MEMS switch or switch array, and/or MEMS based logic.
  • the invention features an IMod that can be used for optical switching and modulation.
  • the invention features IMods that incorporate 2-D and 3-D photonic structures.
  • the invention features a variety of applications for the modulation of light.
  • the invention features a MEMS manufacturing and packaging approach based on a continuous web fed process.
  • the invention features IMods used as test structures for the evaluation of residual stress in deposited films.
  • FIG. 1A is a cross-section of a display substrate incorporating an anti-reflection coating and integrated supplemental lighting.
  • FIG. 1B reveals another scheme for supplemental lighting.
  • FIG. 2 shows detail of the fabrication process of a micromachined arc lamp source.
  • FIG. 3 illustrates a bias centered driving scheme for arrays of IMods in a display.
  • FIG. 4A is a diagram which illustrates a color display scheme based on the concept of “base+pigment”.
  • FIG. 4B reveals a block diagram of a system that provides for field reconfigurable display centric products.
  • FIG. 4C illustrates the concept as applied to a general-purpose display-centric product.
  • FIG. 5A is a diagram revealing an IMod geometry that decouples the optical behavior from the electromechanical behavior, shown in the un-actuated state.
  • FIG. 5B shows the same IMod in the actuated state.
  • FIG. 5C is a plot showing the performance of this IMod design in the black and white state.
  • FIG. 5D is a plot showing the performance of several color states.
  • FIG. 6A shows a diagram of an IMod that similarly decouples the optical behavior from the electromechanical, however the support structure is hidden.
  • FIG. 6B shows the same design in the actuated state.
  • FIG. 7A illustrates an IMod design that utilizes anisotropically stressed membranes, in one state.
  • FIG. 7B shows the same IMod in another state.
  • FIG. 8A is an illustration showing an IMod that relies on rotational actuation.
  • FIG. 8B reveals the fabrication sequence of the rotational IMod design.
  • FIG. 9A is a block diagram of a MEMS switch.
  • FIG. 9B is a block diagram of a row driver based on MEMS switches.
  • FIG. 9C is a block diagram of a column driver based on MEMS switches.
  • FIG. 9D is a block diagram of a NAND gate based on MEMS switches.
  • FIG. 9E is a block diagram of a display system incorporating MEMS based logic and driver components.
  • FIG. 10A is a drawing that reveals the structure, fabrication, and operation of a MEMS switch.
  • FIG. 10B illustrates two alternative switch designs.
  • FIG. 11A is a drawing that shows examples of mirroring based 2-D photonic structure.
  • FIG. 11B is a drawing of a periodic 2-D photonic structure.
  • FIG. 12 is a diagram which revealing an example of a 3-D photonic structure.
  • FIG. 13A is a drawing illustrating an IMod incorporating a mirroring structure in the un-actuated state.
  • FIG. 13B is the same IMod in the actuated state.
  • FIG. 13C shows an IMod incorporating periodic 2-D photonic structure.
  • FIG. 14A illustrates and IMod design which acts as an optical switch.
  • FIG. 14B shows a variation of this design that acts as an optical attenuator.
  • FIG. 15A is a diagram of an IMod design that functions as an optical switch or optical decoupler.
  • FIG. 15B illustrates how combinations of these IMods can act as a N ⁇ N optical switch.
  • FIG. 16 shows the fabrication sequence for a tunable IMod structure.
  • FIG. 17A illustrates how the tunable IMod structure can be incorporated into a wavelength selective switch.
  • FIG. 17B further illustrates how the wavelength selective switch may incorporate solid state devices.
  • FIG. 17C illustrates how bump-bonded components may be intergrated.
  • FIG. 18A is a schematic representation of a two-channel equalizer/mixer.
  • FIG. 18B illustrates how the equalizer/mixer may be implemented using IMod based components.
  • FIG. 19 is a diagram illustrating a continuous web-based fabrication process.
  • FIG. 20 illustrates how IMod based test structures may be used as tools for stress measurement.
  • FIGS. 21 A- 21 C Describe.
  • IMod design An attribute of one previously described IMod design (the induced absorber design described in U.S. patent application Ser. No. 08/554,630, filed on Nov. 6, 1995, and incorporated by reference) is the efficiency of its dark state, in which it can absorb as much as 99.7% of light which is incident upon it. This is useful in reflective displays.
  • the IMod reflects light of a certain color in the un-actuated state, and absorbs light in the actuated state.
  • the IMod array resides on a substrate, the potential for absorption is diminished by the inherent reflection of the substrate. In the case of a glass substrate, the amount of reflection is generally about 4% across the visible spectrum. Thus, despite the absorptive capability of the IMod structure, a dark state can only be as dark as the front surface reflection from the substrate will permit.
  • AR coatings anti-reflection coatings
  • These coatings can comprise one or more layers of dielectric films deposited on the surface of a substrate and are designed to reduce the reflection from that surface.
  • dielectric films deposited on the surface of a substrate and are designed to reduce the reflection from that surface.
  • There are many different possible configurations for such films and design and fabrication is a well known art.
  • One simple film design is a single coating of magnesium fluoride approximately one-quarter wave thick.
  • Another example utilizes a quarter wave film of lead fluoride deposited on the glass, followed by a quarter wave film of magnesium fluoride, with yet a third example interposing a film of zinc sulfide between the two.
  • FIG. 1A illustrates one way in which an AR coating may be incorporated into an IMod display to improve the performance of the display system.
  • AR coating 100 which, as stated, could comprise one or more thin films, is deposited on the surface of glass layer 102 bonded to glass substrate 106 , on the opposite side of which is fabricated IMod array 108 .
  • the presence of AR coating 100 reduces the amount of incident light 109 reflected from the surface by coupling more of it into the glass layer 102 . The result is that more of the incident light is acted upon by the IMod array and a darker display state can be obtained when the IMod is operating in the absorptive mode.
  • the AR coating 100 could also be deposited directly on the surface of glass substrate 106 on the side opposite that of the IMod array.
  • FIG. 1A also shows how supplemental lighting may be supplied to such a display.
  • an array of microscopic arc lamps, 104 is fabricated into glass layer 102 .
  • Arc lamps are efficient suppliers of light. Historically, arc lamps have been fabricated using techniques relevant to the fabrication of ordinary light bulbs. A typical version of such a lamp is described in U.S. Pat. No. 4,987,496. A glass vessel is built, and electrodes, fabricated separately, are enclosed in the vessel. After filling with an appropriate gas, the vessel is sealed. Although such bulbs may be made small, their method of manufacture may not be suited to the fabrication of large monolithic arrays of such bulbs.
  • FIG. 2 provides detail on how one such lamp, optimized for a flat panel display, could be fabricated.
  • the sequence is described as follows.
  • glass layer 200 is etched to form a reflector bowl 201 using wet or dry chemical etching.
  • the depth and shape of the bowl are determined by the required area of illumination for each lamp.
  • a shallow bowl would produce a broad reflected beam spread while a parabola would tend to collimate the reflected light.
  • the diameter of the bowl could vary from 10 to several hundred microns. This dimension is determined by the amount of display area that can be acceptably obscured from the viewer's perspective. It is also a function of the density of the array of micro-lamps.
  • a reflector/metal halide layer 204 and sacrificial layer 202 are deposited and patterned.
  • the reflector/metal halide layer could be a film stack comprising aluminum (the reflector) and metal halides such as thallium iodide, potassium iodide, and indium iodide.
  • the metal halide while not essential, can enhance the properties of the light that is generated.
  • the sacrificial layer could be a layer such as silicon, for example.
  • electrode layer 206 is deposited and patterned to form two separate electrodes.
  • This material could be a refractory metal like tungsten and would have a thickness that is sufficient to provide mechanical support, on the order of several thousand angstroms.
  • sacrificial layer 202 is removed using a dry release technique.
  • the assembly (in the form of an array of such lamps) is sealed by bonding to a glass plate like substrate 106 (shown in FIG. 1A) such that the reflector faces the plate.
  • a gas, such as xenon is used to backfill the cavities, formed by the lamps during the sealing process, to a pressure of approximately one atmosphere. This could be accomplished by performing the sealing process in an airtight chamber that has been previously filled with Xenon.
  • the application of sufficient voltage to the electrodes of each lamp will result in an electrical discharge, in the gas between the ends of the electrodes, and the emission of light 205 in a direction away from the reflector 204 .
  • This voltage could be as low as several tens of volts if the gap spacing is on the order of several hundred microns or less.
  • the sacrificial layer, 202 will determine the position of the electrodes within the bowl. In this case, the thickness is chosen to position the discharge at the focal point of the bowl. Should there be residual stress, which would cause the electrodes to move when released, then thickness is chosen to compensate for this movement. In general the thickness will be some fraction of the depth of the bowl, from several to tens of microns.
  • the light is shown traveling along a path 113 .
  • light is emitted towards the IMod array, where it is acted on and subsequently reflected by the array along paths 110 , towards interface 107 and the viewer 111 .
  • the lamps may be fabricated without including the reflector layer so that they may emit light omnidirectionally.
  • Lamps fabricated with or without the reflector may be used in a variety of applications requiring microscopic light sources or light source arrays. These could include projection displays, backlights for emissive flat panel displays, or ordinary light sources for internal (homes, buildings) or external (automobiles, flashlights) use.
  • Light guide 118 comprises a glass or plastic layer that has been bonded to substrate 112 .
  • Light source 116 which could comprise any number of emissive sources such as fluorescent tubes, LED arrays, or the aforementioned micro-lamp arrays, is mounted on opposite sides of the light guide.
  • the light 122 is coupled into the light guide using a collimator 120 such that most of the light is trapped within the guide via total internal reflection.
  • Scatter pad 124 is an area of the light guide that has been roughened using wet or dry chemical means.
  • the scatter pad is coated with a material or thin film stack 126 which presents a reflective surface towards substrate 112 and an absorbing surface towards the viewer 128 .
  • the scatter pads are fabricated in an array, with each pad dimensioned such that the portion of the display that it obscures from direct view is hardly noticeable. While these dimensions are small, on the order of tens of microns, they can provide sufficient supplemental lighting because of the inherent optical efficiency of the underlying IMod array 114 .
  • the shape of the scatter pad may be circular, rectangular, or of arbitrary shapes which may minimize their perception by the viewer.
  • a sequence of voltages is applied to the rows and columns of the array in what is generally known as a “line at a time” fashion.
  • the basic concept is to apply a sufficient voltage to a particular row such that voltages applied to selected columns cause corresponding elements on the selected row to actuate or release depending on the column voltage.
  • the thresholds and applied voltages must be such that only the elements on the selected row are affected by the application of the column voltages.
  • An entire array can be addressed over a period of time by sequentially selecting the set of rows comprising the display.
  • Hysteresis curve 300 is an idealized representation of the electroptical response of a reflective IMod.
  • the x-axis shows applied voltage, and the y-axis shows amplitude of reflected light.
  • the IMod exhibits hysteresis because, as the voltage is increased past the pull-in threshold, the IMod structure actuates and becomes highly absorbing. When the applied voltage is decreased, the applied voltage must be brought below the release threshold in order for the structure to move back into the un-actuated state. The difference between the pull-in and release thresholds produces the hysteresis window.
  • the hysteresis effect as well as an alternative addressing scheme, is discussed in U.S.
  • timing diagram 302 illustrates the kind of waveforms that may be applied to actuate an array of IMods that exhibit a hysteresis curve resembling curve 300 .
  • a total of five voltages, two column voltages and three row voltages, are required.
  • the voltages are selected such that Vcol 1 is exactly twice the value of Vbias, and Vcol 0 is zero volts.
  • the row voltages are selected so that the difference between Vsel F 0 and Vcol 0 equals Von, and the difference between Vsel F 0 and Vcol 1 equals Voff. Conversely, the difference between Vsel F 1 and Vcol 1 equals Von, and the difference between Vsel F 1 and Vcol 0 equals Voff.
  • the addressing occurs in alternating frames 0 and 1 .
  • data for row 0 is loaded into the column drivers during frame 0 resulting in either a voltage level of Vcol 1 or Vcol 0 being applied depending on whether the data is a binary one or zero respectively.
  • row driver 0 applies a select pulse with the value of Vsel F 0 . This results in any IMods on columns with Vcol 0 present becoming actuated, and IMods on columns with Vcol 1 present, releasing.
  • the data for the next row is loaded into the columns and a select pulse applied to that row and so on sequentially until the end of the display is reached. Addressing is then begun again with row 0 ; however this time the addressing occurs within frame 1 .
  • the IMod is a versatile device with a variety of potential optical responses, a number of different color display schemes are enabled having different attributes.
  • One potential scheme exploits the fact that there are binary IMod designs that are capable of achieving color states, black states, and white states in the same IMod. This capability can be used to achieve a color scheme that can be described as “base+pigment”.
  • base+pigment This terminology is used because the approach is analogous to the way in which paint colors are produced by adding pigments to a white base to achieve a desired color. Using this approach, a particular paint can attain any color in the spectrum and any level of saturation by controlling the content and amount of pigments that are added to the base. The same can be said for a display that incorporates colored and black and white pixels.
  • a pixel 400 comprises five subpixel elements, 402 , 404 , 406 , and 408 , with each subpixel capable of reflecting red, green, blue, and white respectively. All of the subpixels are capable of a black state. Control over the brightness of each subpixel can be accomplished using pulse width modulation related techniques as discussed in U.S. Pat. No. 5,835,255. In conjunction with properly selected relative subpixel sizes, this results in a pixel over which a very large degree of control can be exercised of brightness and saturation. For example, by minimizing the overall brightness of the white subpixels, highly saturated colors may be achieved. Conversely, by minimizing the brightness of the color subpixels, or by maximizing them in conjunction with the white subpixels, a bright black and white mode may be achieved. All variations in between are obviously attainable as well.
  • a user may want to use a product in black and white mode if, some context, only text were being viewed. In another situation, however, the user may want to view high quality color still images, or in yet another mode may want to view live video.
  • Each of these modes while potentially within the range of a given IMod display configuration, requires tradeoffs in particular attributes. Tradeoffs include the need for low refresh rates if high-resolution imagery is required, or the ability to achieve high gray scale depth if only black and white is requested.
  • the controller hardware may be reconfigurable to some extent. Tradeoffs are a consequence of the fact that any display has only a certain amount of bandwidth, which is fundamentally limited by the response time of the pixel elements and thus determines the amount of information which can be displayed at a given time.
  • controller logic 412 is implemented using one of a variety of IC technologies, including programmable logic devices (PLAs) and field programmable gate arrays (FPGAs), which allow for the functionality of the component to be altered or reconfigured after it leaves the factory.
  • PLAs programmable logic devices
  • FPGAs field programmable gate arrays
  • Such devices which are traditionally used for specialized applications such as digital signal processing or image compression, can provide the high performance necessary for such processing, while supplying flexibility during the design stage of products incorporating such devices.
  • the controller 412 provides signals and data to the driver electronics 414 and 416 for addressing the display 418 .
  • Conventional controllers are based on IC's or Application Specific Integrated Circuits (ASICs), which are effectively “programmed” by virtue of their design during manufacture.
  • the term program in this case, means an internal chip layout comprising numerous basic and higher level logical components (logic gates and logic modules or assemblies of gates).
  • field programmable devices such PLAs or FPGAs, different display configurations may be loaded into the display controller component in the form of hardware applications or “hardapps”, from a component 410 , which could be memory or a conventional microprocessor and memory.
  • the memory could be in the form of EEPROMS or other reprogrammable storage devices, and the microprocessor could take on the form of simple microcontroller whose function is to load the hardapp from memory into the FPGA, unless this were performed by whatever processor is associated with the general functioning of the product.
  • This approach is advantageous because with relatively simple circuitry it is possible to achieve a wide variety of different display performance configurations and mixed display scan rates, along with the potential to combine them.
  • One portion of the screen might be operated as a low-resolution text entry area, while another provides high quality rendition of an incoming email. This could be accomplished, within the overall bandwidth limitations of the display, by varying the refresh rate and # of scans for different segments of the display.
  • the low-resolution text area could be scanned rapidly and only once or twice corresponding to one or two bits of gray scale depth.
  • the high rendition email area could be scanned rapidly and with three or four passes corresponding to three or four bits of grayscale.
  • FIG. 4C shows a configuration of a generic portable electronic product 418 that has a programmable logic device or equivalent at its core 420 .
  • the central processor is a variant of a RISC processor that uses a reduced instruction set. While RISC processors are more efficient versions of CPUs that power most personal computers, they are still general-purpose processors that expend a lot of energy performing repetitive tasks such as retrieving instructions from memory.
  • the hardapp processor 420 is shown at the center of a collection of I/O devices and peripherals that it will utilize, modify, or ignore based on the nature and function of the hardapp currently loaded.
  • the hardapps can be loaded from memory 422 resident in the product, or from an external source via RF or IR interface, 424 , which could pull hardapps from the internet, cellular networks, or other electronic devices, along with content for a particular hardapp application.
  • Other examples of hardapps include voice recognition or speech synthesis algorithms for the audio interface 432 , handwriting recognition algorithms for pen input 426 , and image compression and processing modes for image input device 430 .
  • Such a product could perform a myriad of functions by virtue of its major components, the display as the primary user interface and the reconfigurable core processor. Total power consumption for such a device could be on the order of tens of milliwatts versus the several hundred milliwatts consumed by existing products.
  • FIGS. 5A and 5B Another way in which this may be accomplished is illustrated in FIGS. 5A and 5B.
  • This design uses electrostatic forces to alter the geometry of an interferometric cavity.
  • Electrode 502 is fabricated on substrate 500 and electrically isolated from membrane/mirror 506 by insulating film 504 . Electrode 502 functions only as an electrode, not also as a mirror.
  • An optical cavity 505 is formed between membrane/mirror 506 and secondary mirror 508 .
  • Support for secondary mirror 508 is provided by a transparent superstructure 510 , which can be a thick deposited organic, such as SU-8, polyimide, or an inorganic material.
  • the membrane/mirror 506 With no voltage applied, the membrane/mirror 506 , maintains a certain position shown in FIG. 5A, relative to secondary mirror 508 , as determined by the thickness of the sacrificial layers deposited during manufacture. For an actuation voltage of about four volts a thickness of several thousand angstroms might be appropriate.
  • the secondary mirror is made from a suitable material, say chromium, and the mirror/membrane made from a reflective material such as aluminum, then the structure will reflect certain frequencies of light 511 which may be perceived by viewer 512 .
  • the chromium is thin enough to be semitransparent, about 40 angstroms, and the aluminum sufficiently thick, at least 500 angstroms, as to be opaque, then the structure may have a wide variety of optical responses.
  • FIGS. 5C and 5D show examples of black and white and color responses respectively, all of which are determined by the cavity length, and the thickness of the constituent layers.
  • FIG. 5B shows the result of a voltage applied between primary electrode 502 and membrane mirror 506 .
  • the membrane/mirror is vertically displaced thus changing the length of the optical cavity and therefore the optical properties of the IMod.
  • FIG. 5C shows one kind of reflective optical response which is possible with the two states, illustrating the black state 521 when the device is fully actuated, and a white state 523 when the device is not.
  • FIG. 5D shows an optical response with color peaks 525 , 527 , and 529 , corresponding to the colors blue, green, and red respectively.
  • the electromechanical behavior of the device thus may be controlled independently of the optical performance.
  • Materials and configuration of the primary electrode, which influence the electromechanics, may be selected independently of the materials comprising the secondary mirror, because they play no role in the optical performance of the IMod.
  • This design may be fabricated using processes and techniques of surface micromachining, for example, the ones described in U.S. patent application Ser. No. 08,688,710, filed on Jul. 31, 1996 and incorporated by reference.
  • the support structure for the IMod 606 is positioned to be hidden by the membrane/mirror 608 .
  • the amount of inactive area is effectively reduced because the viewer sees only the area covered by the membrane/mirror and the minimum space between adjoining IMods. This is unlike the structure in FIG. 5A where the membrane supports are visible and constitute inactive and inaccurate, from a color standpoint, area.
  • FIG. 6B reveals the same structure in the actuated state.
  • FIG. 7A another geometric configuration is illustrated for use in an IMod structure. This design is similar to one shown in U.S. Pat. No. 5,638,084. That design relied upon an opaque plastic membrane that is anisotropically stressed so that it naturally resides in a curled state. Application of a voltage flattens the membrane to provide a MEMS-based light shutter.
  • the device's functionality may be improved by making it interferometric.
  • the IMod variation is shown in FIG. 7A where thin film stack 704 is like the dielectric/conductor/insulator stack which is the basis for the induced absorber IMod design discussed in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996 and incorporated by reference.
  • Aluminum 702 which could also include other reflective metals (silver, copper, nickel), or dielectrics or organic materials which have been undercoated with a reflective metal, is deposited on a thin sacrificial layer so that it may be released, using wet etch or gas phase release techniques.
  • Aluminum membrane 702 is further mechanically secured to the substrate by a support tab 716 , which is deposited directly on optical stack 704 . Because of this, light that is incident on the area where the tab and the stack overlap is absorbed making this mechanically inactive area optically inactive as well. This technique eliminates the need for a separate black mask in this and other IMod designs.
  • Incident light 706 is either completely absorbed or a particular frequency of light 708 , is reflected depending on the spacing of the layers of the stack.
  • the optical behavior is like that of the induced absorber IMod described in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996, and incorporated by reference.
  • FIG. 7B shows the device configuration when no voltage is applied.
  • the residual stresses in the membrane induce it to curl up into a tightly wound coil.
  • the residual stresses can be imparted by deposition of a thin layer of material 718 on top of the membrane, which has extremely high residual tensile stress. Chromium is one example in which high stresses may be achieved with a film thickness a low as several hundred angstroms.
  • light beam 706 is allowed to pass through the stack 704 and intersect with plate 710 .
  • Plate 710 can reside in a state of being either highly absorbing or highly reflective (of a particular color or white).
  • the optical stack 704 would be designed such that when the device is actuated it would either reflect a particular color (if plate 710 were absorbing) or be absorbing (if plate, 710 were reflective).
  • FIG. 8A another IMod geometry relies on rotational actuation.
  • electrode 802 an aluminum film about 1000 angstroms thick, is fabricated on substrate 800 .
  • Support post 808 and rotational hinge 810 support shutter 812 , upon which a set of reflecting films 813 has been deposited.
  • the support shutter may be an aluminum film which is several thousand angstroms thick. Its X-Y dimensions could be on the order of tens to several hundred microns.
  • the films may be interferometric and designed to reflect particular colors.
  • a fixed interferometric stack in the form of an induced absorber like that described in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996 and incorporated by reference would suffice. They may also comprise polymers infused with color pigments, or they may be aluminum or silver to provide broadband reflection.
  • the electrode 802 and the shutter 812 are designed such that the application of a voltage (e.g., 10 volts) between the two causes the shutter 812 to experience partial or full rotation about the axis of the hinge. Only shutter 818 is shown in a rotated state although typically all of the shutters for a given pixel would be driven in unison by a signal on the common bus electrode 804 .
  • Such a shutter would experience a form of electromechanical hysteresis if the hinges and electrode distances were designed such that the electrostatic attraction of the electrodes overcomes the spring tension of the hinge at some point during the rotation.
  • the shutters would thus have two electromechanically stable states.
  • FIG. 8A illustrates the reflective mode where incident light 822 is reflected back to the viewer 820 .
  • the shutter either reflects a white light, if the shutter is metallized, or reflects a particular color or set of colors, if it is coated with interferometric films or pigments. Representative thicknesses and resulting colors, for an interferometric stack, are also described in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996 and incorporated by reference.
  • the light is allowed to pass through and be absorbed in substrate 800 if the opposite side of the shutter were coated with an absorbing film or films 722 .
  • These films could comprise another pigment infused organic film, or an induced absorber stack designed to be absorbing.
  • the shutters may be highly absorbing, i.e., black, and the opposite side of substrate 800 coated with highly reflective films 824 , or be selectively coated with pigment or interferometric films to reflect colors, along the lines of the color reflecting films described above.
  • supplementary electrode 814 which provides additional torque to the shutter when charged to a potential that induces electrostatic attraction between supplementary electrode 814 and shutter 812 .
  • Supplementary electrode 814 comprises a combination of a conductor 814 and support structure 816 .
  • the electrode may comprise a transparent conductor such as ITO that could be about thousand angstroms thick. All of the structures and associated electrodes are machined from materials that are deposited on the surface of a single substrate, i.e. monolithically, and therefore are easily fabricated and reliably actuated due to good control over electrode gap spaces.
  • FIG. 8B shows a fabrication sequence for the rotational modulator.
  • substrate 830 has been coated with electrode 832 and insulator 834 .
  • Typical electrode and insulator materials are aluminum and silicon dioxide, each of a thickness of one thousand angstroms each. These are patterned in step 2 .
  • Sacrificial spacer 836 a material such as silicon several microns in thickness, has been deposited and patterned in step 3 and coated with post/hinge/shutter material 838 in step 4 . This could be an aluminum alloy or titanium/tungsten alloy about 1000 angstroms thick.
  • step 5 material 838 has been patterned to form bus electrode 844 , support post 840 , and shutter 842 .
  • Shutter reflector 846 has been deposited and patterned in step 6 .
  • step 7 the sacrificial spacer has been etched away yielding the completed structure. Step 7 also reveals a top view of the structure showing detail of the hinge comprising support posts 848 , torsion arm 850 , and shutter 852 .
  • IMods that are binary devices only a small number of voltage levels is required to address a display.
  • the driver electronics need not generate analog signals that would be required to achieve gray scale operation.
  • the electronics may be implemented using other means as suggested in U.S. patent application Ser. No. 08/769,947, filed on Dec. 19, 1996 and incorporated by reference.
  • the drive electronics and logic functions can be implemented using switch elements based on MEMS.
  • FIG. 9A is a diagram of a basic switch building block with an input 900 making a connection to output 904 by application of a control signal 902 .
  • FIG. 9B illustrates how a row driver could be implemented.
  • the row driver for the addressing scheme described above requires the output of three voltage levels.
  • Application of the appropriate control signals to the row driver allows one of the input voltage levels to be selected for output 903 .
  • the input voltages are Vcol 1 , Vcol 0 , and Vbias corresponding to 906 , 908 , and 910 in the figure.
  • the appropriate control signals result in the selection of one or the other input voltage levels for delivery to the output 920 .
  • FIG. 9D illustrates how a logic device 932 , may be implemented, in this case a NAND gate, using basic switch building blocks 934 , 936 , 938 , and 940 . All of these components can be configured and combined in a way that allows for the fabrication of the display subsystem shown in FIG. 9E.
  • the subsystem comprises controller logic 926 , row driver 924 , column driver 928 , and display array 930 , and uses the addressing scheme described above in FIG. 3.
  • Step 1 shows both a side view and top view of the initial stage.
  • Arrow 1004 indicates the direction of the perspective of the side view.
  • Substrate 1000 has had sacrificial spacer 1002 a silicon layer 2000 angstroms thick deposited and patterned on its surface.
  • a structural material an aluminum alloy several microns thick, has been deposited and patterned to form source beam 1010 , drain structure 1008 , and gate structure 1006 .
  • Several hundred angstroms of a non-corroding metal such as gold, iridium or platinum may be plated onto the structural material at this point to maintain low contact resistance through the life of the switch.
  • Notch 1012 has been etched in source beam 1010 to facilitate the movement of the beam in a plane parallel to that of the substrate.
  • the perspective of the drawing is different in steps 3 and 4 , which now compare a front view with a top view. Arrows 1016 indicate the direction of the perspective of the front view.
  • step 3 the sacrificial material has been etched away leaving the source beam 1010 intact and free to move.
  • the source beam 1010 When a voltage is applied between the source beam and the gate structure, the source beam 1010 is deflected towards gate 1006 until it comes into contact with the drain 1008 , thereby establishing electrical contact between the source and the drain.
  • the mode of actuation is parallel to the surface of the substrate, thus permitting a fabrication process that is compatible with the main IMod fabrication processes. This process also requires fewer steps than those used to fabricate switches that actuate in a direction normal the substrate surface.
  • FIG. 10B and 10C illustrates two alternative designs for planar MEM switches.
  • the switch in FIG. 10B differs in that switch beam 1028 serves to provide contact between drain 1024 and source 1026 .
  • switch beam 1028 serves to provide contact between drain 1024 and source 1026 .
  • FIG. 10A currents that must pass through the source beam to the drain may effect switching thresholds, complicating the design of circuits. This is not the case with switch 1020 .
  • the switch in FIG. 10C reveals a further enhancement.
  • insulator 1040 electrically isolates switch beam 1042 from contact beam 1038 .
  • This insulator may be a material such as SiO2 that can be deposited and patterned using conventional techniques. Use of such a switch eliminates the need to electrically isolate switch drive voltages from logic signals in circuits comprising these switches.
  • IMods feature elements that have useful optical properties and are movable by actuation means with respect to themselves or other electrical, mechanical or optical elements.
  • Assemblies of thin films to produce interferometric stacks are a subset of a larger class of structures that we shall refer to as multidimensional photonic structures.
  • a photonic structure as one that has the ability to modify the propagation of electromagnetic waves due to the geometry and associated changes in the refractive index of the structure.
  • Such structures have a dimensional aspect because they interact with light primarily along one or more axes.
  • Structures that are multidimensional have also been referred to as photonic bandgap structures (PBG's) or photonic crystals.
  • PBG's photonic bandgap structures
  • the text “Photonic Crystals” by John D. Joannopoulos, et al describes photonic structures that are periodic.
  • a one-dimensional PBG can occur in the form of a thin film stack.
  • FIG. 16 shows the fabrication and end product of an IMod in the form of a dielectric Fabry-Perot filter.
  • Thin film stacks 1614 and 1618 which could be alternating layers of silicon and silicon dioxide each a quarter wave thick, have been fabricated on a substrate to form an IMod structure that incorporates central cavity 1616 .
  • the stack is continuous in the X and Y direction, but has a periodicity in the optical sense in the Z direction due to variations in the refractive index of the material as they are comprised of alternating layers with high and low indices.
  • This structure can be considered one-dimensional because the effect of the periodicity is maximized for waves propagating along one axis, in this case the Z-axis.
  • FIGS. 11A and 11B illustrate two manifestations of a two-dimensional photonic structure.
  • a microring resonator 1102 can be fabricated from one of a large number of well known materials, an alloy of tantalum pentoxide and silicon dioxide for example, using well known techniques.
  • the structure is essentially a circular waveguide whose refractive index and dimensions w, r, and h determine the frequencies and modes of light which will propagate within it.
  • a resonator if designed correctly, can act as a frequency selective filter for broadband radiation that is coupled into it. In this case, the radiation is generally propagating in the XY plane as indicated by orientation symbol 1101 .
  • the one-dimensional analog of this device would be a Fabry-Perot filter made using single layer mirrors. Neither device exhibits a high order optical periodicity, due to the single layer “boundaries” (i.e. mirrors); however, they can be considered photonic structures in the broad sense.
  • FIG. 11B A more traditional PBG is shown in FIG. 11B.
  • Columnar array 1106 presents a periodic variation in refractive index in both the X and Y directions. Electromagnetic radiation propagating through this medium is most significantly affected if it is propagating within the XY plane, indicated by orientation symbol 1103 .
  • the array of FIG. 11B shares attributes with a one-dimensional thin film stack, except for its higher-order dimensionality.
  • the array is periodic in the sense that along some axis through the array, within the XY plane, the index of refraction varies between that of the column material, and that of the surrounding material, which is usually air.
  • Appropriate design of this array utilizing variations on the same principles applied to the design of thin film stacks, allows for the fabrication of a wide variety of optical responses, (mirrors, bandpass filters, edge filters, etc.) acting on radiation traveling in the XY plane.
  • Array 1106 in the case shown in FIG.
  • 11B includes a singularity or defect 1108 in the form of a column that, differs in its dimension and/or refractive index.
  • the diameter of this column might be fractionally larger or smaller than the remaining columns (which could be on the order of a quarter wavelength in diameter), or it may be of a different material (perhaps air vs. silicon dioxide).
  • the overall size of the array is determined by the size of the optical system or component that needs to be manipulated.
  • the defect may also occur in the form of the absence of a column or columns (a row), depending on the desired behavior.
  • This structure is analogous to the dielectric Fabry-Perot filter of FIG. 16, but it functions in only two dimensions. In this case, the defect is analogous to the cavity, 1616 .
  • the remaining columns are analogous to the adjacent two-dimensional stacks.
  • column x spacing sx the relevant dimensions of the structure of FIG. 11B are denoted by column x spacing sx, column y spacing sy, (either of which could be considered the lattice constant), column diameter d, and array height, h.
  • column diameters and spacings can be on the order of a quarter wave.
  • the height, h is determined by the desired propagation modes, with little more than one half wavelength used for single mode propagation.
  • the equations for relating the size of the structures to their effect on light are well known and documented in the text “Photonic Crystals” by John D. Joannopoulos, et al.
  • This kind of structure may also be fabricated using the same materials and techniques used to fabricate the resonator 1102 .
  • a single film of silicon may be deposited on a glass substrate and patterned, using conventional techniques, and etched using reactive ion etching to produce the high aspect ratio columns.
  • the diameter and spacing of the columns could be on the order of 0.5 um and 0.1 um respectively.
  • Photonic structures also make it possible to direct radiation under restrictive geometric constraints. Thus they are quite useful in applications where it is desirable to redirect and/or select certain frequencies or bands of frequencies of light when dimensional constraints are very tight.
  • Waveguides channeling light propagating in the XY plane, may be fabricated which can force light to make 90 degree turns in a space less than the wavelength of the light. This can be accomplished, for example, by creating the column defect in the form of a linear row, which can act as the waveguide.
  • Three-dimensional periodic structure 1202 acts on radiation propagating in the XY, YZ, and XZ planes.
  • a variety of optical responses may be attained by appropriate design of the structure and selection of its constituent materials. The same design rules apply, however they are applied three-dimensionally here.
  • Defects occur in the form of points, lines, or regions, vs. points and lines, which differ in size and/or refractive index from the surrounding medium.
  • the defect 1204 is a single point element but may also be linear or a combination of linear and point elements or regions.
  • a “linear” or “serpentine” array of point defects may be fabricated such that it follows an arbitrary three-dimensional path through the PBG, and acts as a tightly constrained waveguide for light propagating within it.
  • the defect would generally be located internally but is shown on the surface for purposes of illustration. The relevant dimensions of this structure are all illustrated in the figure.
  • the diameter and spacing and materials of the PBG are completely application dependent, however the aforementioned design rules and equations also apply.
  • Fabrication techniques for building periodic three-dimensional structures include: holographic, where a photosensitive material is exposed to a standing wave and replicates the wave in the form of index variations in the material itself; self-organizing organic or self-assembling materials that rely on innate adhesion and orientation properties of certain co-polymeric materials to create arrays of columnar or spherical structures during the deposition of the material; ceramic approaches that can involve the incorporation of a supply of spherical structures of controlled dimensions into a liquid suspension that, once solidified, organizes the structures, and can be removed by dissolution or high temperature; combinations of these approaches; and others.
  • Co-polymeric self-assembly techniques are especially interesting because they are both low temperature and require minimal or no photolithography.
  • this technique involves the dissolution of a polymer, polyphenylquinoine-block-polystyrene (PPQmPSn) is one example, into a solvent such as carbon disulfide. After spreading the solution onto a substrate and allowing the solvent to evaporate, a close packed hexagonal arrangement of air filled polymeric spheres results. The process can be repeated multiple times to produce multilayers, the period of the array may be controlled by manipulating the number of repeat units of the components (m and n) of the polymer. Introduction of a nanometer sized colloid comprising metals, oxides, or semiconductors that can have the effect of reducing the period of the array further, as well as increasing the refractive index of the polymer.
  • Defects may be introduced via direct manipulation of the material on a submicron scale using such tools as focused ion beams or atomic force microscopes.
  • the former may be used to remove or add material in very small selected areas or to alter the optical properties of the material.
  • Material removal occurs when the energetic particle beam, such as that used by a Focused Ion Beam tool, sputters away material in its path.
  • Material addition occurs when the focused ion beam is passed through a volatile metal containing gas such as tungsten hexafluoride (for tungsten conductor) or silicon tetrafluoride (for insulating silicon dioxide). The gas breaks down, and the constituents are deposited where the beam contacts the substrate.
  • Atomic force microscopy may be used to move materials around on the molecular scale.
  • micro-electrodeposition Another approach involves the use of a technique that can be called micro-electrodeposition and which is described in detail in U.S. Pat. No. 5,641,391.
  • a single microscopic electrode can be used to define three-dimensional features of submicron resolution using a variety of materials and substrates.
  • Metal “defects” deposited in this way could be subsequently oxidized to form an dielectric defect around which the PBG array could be fabricated using the techniques described above.
  • the class of devices known as IMods may be further broadened by incorporating the larger family of multidimensional photonic structures into the modulator itself.
  • Any kind of photonic structure, which is inherently a static device, may now be made dynamic by altering its geometry and/or altering its proximity to other structures.
  • the micromechanical Fabry-Perot filter shown in FIG. 16, comprising two mirrors which are each one-dimensional photonic structures, may be tuned by altering the cavity width electrostatically.
  • FIG. 13 shows two examples of IMod designs incorporating two-dimensional PBGs.
  • a cutaway diagram reveals a self-supporting membrane 1304 , which has been fabricated with a microring resonator 1306 mounted on the side facing the substrate.
  • Waveguides 1301 and 1302 lying within the bulk of the substrate 1303 are planar and parallel and can be fabricated using known techniques.
  • the IMod is shown in the un-driven state with a finite airgap (number) between the microring and the substrate.
  • the microring is fabricated so that its position overlaps and aligns with the paired waveguides in the substrate below. Dimensions of the microring are identical to the example described above.
  • light 1308 propagates undisturbed in waveguide 1302 , and the output beam 1310 is spectrally identical to the input 1308 .
  • FIG. 13C Another example is illustrated in FIG. 13C.
  • a pair of waveguides 1332 and 1330 and resonator 1314 are fabricated on the substrate in the form of a columnar PBG.
  • the PBG is a uniform array of columns, with the waveguides defined by removing two rows (one for each waveguide), and the resonator defined by removing two columns.
  • Top view 1333 provides more detail of the construction of waveguides 1330 and 1332 , and the resonator 1314 . Dimensions are dependent on the wavelength of interest as well as materials used. For a wavelength of 1.55 um, the diameter and spacing of the columns could be on the order of 0.5 um and 1 um respectively. The height, h, determines the propagation modes which will be supported and should be slightly more than half the wavelength if only single modes are to be propagated.
  • the membrane 1315 On the inner surface of the membrane 1315 are fabricated two isolated columns 1311 , which are directed downwards, and have the same dimensions and are of the same material (or optically equivalent) as the columns on the substrate.
  • the resonator and columns are designed to complement each other; there is a corresponding absence of a column in the resonator where the column on the membrane is positioned.
  • a device based on the induced absorber includes a self-supporting aluminum membrane 1400 , on the order of tens to hundreds of microns square, which is suspended over a stack of materials 1402 comprising a combination of metals and oxides and patterned on transparent substrate.
  • the films utilized in the induced absorber modulator described in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996, and incorporated by reference, could serve this purpose.
  • the films on the substrate may also comprise a transparent conductor, such as ITO.
  • the structure may incorporate on its underside a lossy metal film such as molybdenum or tungsten, of several hundred angstroms in thickness.
  • the materials are configured so that in the undriven state the device reflects in a particular wavelength region, but becomes very absorbing when the membrane is driven into contact.
  • Side view 1410 shows a view of the device looking into the side of the substrate.
  • Light beam 1408 propagates at some arbitrary angle through the substrate and is incident on IMod 1406 , shown in the un-driven state. Assuming the frequency of the light corresponds with the reflective region of the IMod in the un-driven state, the light is reflected at a complementary angle and propagates away.
  • Side view, 1414 shows the same IMod in the driven state. Because the device is now very absorbing, the light which is incident upon it is no longer reflected but absorbed by the materials in the IMod's stack.
  • the IMod may act as an optical switch for light that is propagating within the substrate upon which it is fabricated.
  • the substrate is machined to form surfaces that are highly polished, highly parallel (to within ⁇ fraction (1/10) ⁇ of a wavelength of the light of interest), and many times thicker (at least hundreds of microns) than the wavelength of light.
  • This allows the substrate to act as a substrate/waveguide in that light beams propagate in a direction which is, on average, parallel to the substrate but undergo multiple reflections from one surface to another.
  • Light waves in such a structure are often referred to as substrate guided waves.
  • FIG. 14B shows a variation on this theme.
  • Membrane 1420 is patterned such that it is no longer rectangular but is tapered towards one end. While the mechanical spring constant of the structure remains constant along this length, electrode area decreases. Thus the amount of force which can be applied electrostatically is lower at the narrower end of the taper. If a gradually increasing voltage is applied, the membrane will begin to actuate at the wider end first and actuation will progress along arrow 1428 as the voltage increases.
  • the IMod operates as an absorbing region whose area depends on the value of the applied voltage.
  • Side view 1434 shows the effect on a substrate propagating beam when no voltage is applied.
  • the corresponding reflective area 1429 which shows the IMod from the perspective of the incident beam, shows “footprint” 1431 of the beam superimposed on the reflective area. Since the entire area 1429 is non-absorbing, beam, 1430 , is reflected from IMod 1428 (with minimal losses) in the form of beam 1432 .
  • variable optical attenuator may be created, the response of which is directly related to the value of the applied voltage.
  • Support frame 1500 is fabricated from a metal, such as aluminum several thousand angstroms in thickness, in such a way that it is electrically connected to mirror 1502 .
  • Mirror 1502 resides on transparent optical standoff 1501 , which is bonded to support 1500 .
  • Mirror 1502 may comprise a single metal film or combinations of metals, oxides, and semiconducting films.
  • the standoff is fabricated from a material that has the same or higher index of refraction than that of the substrate. This could be SiO2 (same index) or a polymer whose index can be varied.
  • the standoff is machined so that the mirror is supported at an angle of 45 degrees. Machining of the standoff can be accomplished using a technique known as analog lithography that relies on a photomask whose features are continuously variable in terms of their optical density. By appropriate variation of this density on a particular feature, three-dimensional shapes can be formed in photoresist that is exposed using this mask. The shape can then be transferred into other materials via reactive ion etching.
  • the entire assembly is suspended over conductor, 1503 , which has been patterned to provide an unobstructed “window” 1505 into the underlying substrate, 1504 . That is to say the bulk of conductor 1503 has been etched away so that window 1505 , comprising bare glass, is exposed.
  • the switch like other IMods, can be actuated to drive the whole assembly into contact with the substrate/waveguide.
  • Side view, 1512 shows the optical behavior. Beam 1510 is propagating within the substrate at an angle 45 degrees from normal that prevents it from propagating beyond the boundaries of the substrate. This is because 45 degrees is above the angle known as the critical angle, which allows the beam to be reflected with minimal or no losses at the interface 1519 between the substrate and the outside medium by the principle of total internal reflection (TIR).
  • TIR total internal reflection
  • TIR The principle of TIR depends on Snell's law, but a basic requirement is that the medium outside the substrate have an index of refraction that is lower than that of the substrate.
  • side view, 1512 the device is shown with the switch 1506 in the un-driven state, and beam 1510 propagating in an unimpeded fashion.
  • switch 1506 When switch 1506 is actuated into contact with the substrate as shown in side view 1514 , the beam's path is altered. Because the standoff has a refractive index greater than or equal to that of the substrate, the beam no longer undergoes TIR at the interface. The beam propagates out of the substrate into the optical standoff, where it is reflected by the mirror.
  • the mirror is angled, at 45 degrees, such that the reflected beam is now traveling at an angle which is normal to the plane of the substrate.
  • the result is that the light may propagate through the substrate interface because it no longer meets the criteria for TIR, and can be captured by a fiber coupler 1520 , which has been mounted on the opposite side of the substrate/waveguide.
  • a similar concept is described in the paper, X. Zhou, et al, “Waveguide Panel Display Using Electromechanical Spatial Modulators”, SID Digest, vol. XXIX, 1998. This particular device was designed for emissive display applications.
  • the mirror may also be implemented in the form of a reflecting grating, which may be etched into the surface of the standoff using conventional patterning techniques.
  • optical structures may be substituted for the mirror as well with their respective attributes and shortcomings. These can be categorized as refractive, reflective, and diffractive and can include micro-lenses (both transmissive and reflective), concave or convex mirrors, diffractive optical elements, holographic optical elements, prisms, and any other form of optical element which can be created using micro-fabrication techniques. In the case where an alternative optical element is used, the standoff and the angle it imparts to the optic may not be necessary depending on the nature of the micro-optic.
  • This variation on the IMod acts as a de-coupling switch for light. Broadband radiation, or specific frequencies if the mirror is designed correctly, can be coupled out of the substrate/waveguide at will.
  • Side view 1526 shows a more elaborate implementation in which an additional fixed mirror, angled at 45 degrees, has been fabricated on the side of the substrate opposite that of the de-coupling switch. This mirror differs from the switch in that it cannot be actuated. By careful selection of the angles of the mirrors on both structures, light 1522 that has been effectively decoupled out of the substrate by switch 1506 may be re-coupled back into the substrate by re-coupling mirror 1528 .
  • the mirror combination may be used to redirect light in any new direction within the substrate/waveguide.
  • the combination of these two structures will be referred to as a directional switch.
  • the coupling mirrors can also be used to couple any light that is propagating into the substrate in a direction normal to the surface.
  • FIG. 15B shows one implementation of an array of directional switches.
  • linear array 1536 is an array of fiber couplers which directs light into the substrate at an angle normal to the XY plane.
  • An array of re-coupling mirrors (not visible) is positioned directly opposite the fiber coupler array to couple light into the substrate parallel to beam 1530 .
  • On the surfaces of the substrate, 1535 are fabricated an array of directional switches of which 1531 is one. The switches are positioned in a way such that light coupled into the substrate from any one of the input fiber couplers 1536 may be directed to any one of the output fiber couplers 1532 . In this way the device may act as an N ⁇ N optical switch that can switch any one of any number of different inputs to any one of any number of different outputs.
  • conducting contact pad 1602 has been deposited and patterned along with dielectric mirrors 1604 and 1608 and sacrificial layer 1606 .
  • This may consist of a silicon film with a thickness of some multiple of one-half a wavelength.
  • the mirrors may comprise stacks of materials, TiO2 (high index) and SiO2 (low index) being two examples, with alternating high and low in dices, and one of the layers may also be air.
  • Insulating layer 1610 is deposited and patterned such that second contact pad 1612 only contacts mirror 1608 .
  • Mirror, 1608 is subsequently patterned leaving a mirror “island” 1614 connected by supports 1615 .
  • the lateral dimensions of the island are primarily determined by the size of light beam with which it will interact. This is usually on the order of tens to several hundred microns.
  • Sacrificial layer 1606 is partially etched chemically, but leaving standoffs of sufficient size to provide mechanical stability, probably on the order of tens of microns square. If the top layer of mirror 1608 and the bottom layer of mirror 1604 are lightly doped to be conducting, then application of a voltage between contact pads 1602 and 1612 will cause the mirror island to be displaced. Thus, the structure's optical response may be tuned.
  • FIG. 17A shows an application of this tunable filter.
  • tunable filter 1704 On the top surface of substrate 1714 has been fabricated tunable filter 1704 , mirrors 1716 , and anti-reflection coating 1712 .
  • a mirror 1717 has also been fabricated on the bottom surface of the substrate, e.g., from a metal such as gold of at least 100 nm thick.
  • an optical superstructure, 1706 Mounted on the top surface of the substrate is an optical superstructure, 1706 , whose inner surface is at least 95% reflective, e.g., by the addition of a reflecting gold film, and which also supports an angled mirror, 1710 .
  • light beam 1702 propagates within the substrate at some angle that is larger than the critical angle, which is approximately 41 degrees for a substrate of glass and a medium of air. Therefore the mirrors 1716 are required to keep it bounded within the confines of the substrate/waveguide. This configuration allows greater flexibility in the selection of angles at which the light propagates.
  • Beam 1702 is incident upon Fabry-Perot 1704 , which transmits a particular frequency of light 1708 while reflecting the rest 1709 .
  • the transmitted frequency is incident onto and reflected from the reflective superstructure 1706 , and is reflected again by mirror 1716 onto angled mirror 1710 .
  • Mirror 1710 is tilted such that the light is directed towards antireflection coating 1712 at a normal angle with respect to the substrate, and passes through and into the external medium.
  • the device as a whole thus acts as a wavelength selective filter.
  • the superstructure may be fabricated using a number of techniques. One would include the bulk micromachining of a slab of silicon to form a cavity of precise depth, e.g., on the order of the thickness of the substrate and at least several hundred microns.
  • the angled mirror is fabricated after cavity etch, and the entire assembly is bonded to the substrate, glass for example, using any one of many silicon/glass bonding techniques.
  • FIG. 17B is a more elaborate version.
  • a second tunable filter 1739 has been added to provide an additional frequency selection channel. That is to say that two separate frequencies may now be selected independently.
  • Detectors 1738 have also been added to allow for a higher degree of integrated functionality.
  • FIG. 17C incorporates integrated circuits.
  • Light beam 1750 has been coupled into substrate 1770 and is incident upon tunable filter 1752 .
  • This filter is different than those of FIGS. 17A and 17B in that it includes recoupling mirror 1756 that has been fabricated on the surface of the movable mirror of the filter.
  • the angle of the mirror is such that the frequency selected by filter 1752 is now coupled directly back into the substrate at a normal angle in the form of light beam 1758 .
  • the remaining frequencies contained in light beam 1750 propagate until they encounter recoupling mirror 1760 which is angled so that it presents a surface which is perpendicular to propagating beam 1756 .
  • the beam thus retraces its path back out of the device where it may be used by other devices that are connected optically.
  • Light beam 1758 is incident on IC 1764 that can detect and decode the information within this beam.
  • This IC may be in the form of an FPGA or other silicon, silicon/germanium, or gallium aresenide device based integrated circuit that could benefit from being directly coupled to information carrying light.
  • a high bandwidth optical interconnect may be formed between ICs 1764 and 1762 by virtue of the bidirectional light path 1772 . This is formed by a combination of mirrors 1766 and recoupling mirrors 1768 .
  • Light can be emmitted by either ICs if they incorporate components such as vertical cavity surface emitting lasers (VCSELS) or light emitting diodes LEDs. Light can be detected by any number of optically sensitive components, with the nature of the component depending on the semiconductor technology used to fabricate the IC. Light that is incident on the IC may also be modulated by IMods that have been fabricated on the surface of the IC that is exposed to the substrate propagating light.
  • VSELS vertical cavity surface emitting lasers
  • LEDs light emitting diodes
  • Light can be detected by any number of optically sensitive components, with the nature of the component depending on the semiconductor technology used to fabricate the IC. Light that is incident on the IC may also be modulated by IMods that have been fabricated on the surface of the IC that is exposed to the substrate propagating light.
  • FIGS. 18A and 18B are an illustration of a two-channel optical mixer implemented using a TIR version of a substrate/waveguide.
  • FIG. 18A shows a schematic of the device. Light containing multiple wavelengths has two particular wavelengths, 1801 and 1803 , split off and directed towards two independent variable attentuators 1805 . They are then output to several possible channels 1807 or into an optical stop 1813 .
  • FIG. 18B reveals an implementation.
  • the input light is directed into the device through fiber coupler 1800 , through anti-reflection coating 1802 , and coupled into the substrate using re-coupling mirror 1806 .
  • the recoupling mirror directs the light onto tunable filter 1808 , splitting off frequency ⁇ 1 (beam 1815 ) and all non-selected frequencies are directed toward a second tunable filter 1809 , which splits off frequency ⁇ 2 (beam 1817 ), with the remaining frequencies, beam 1819 , propagating further downstream via TIR.
  • beam 1815 Following the path of beam 1815 , which was transmitted by tunable filter 1808 , the light is redirected back into the substrate waveguide via mirror 1810 , through an AR coating, and re-coupled back into the substrate.
  • the re-coupling mirror 1811 directs beam 1815 towards attenuator 1812 where it continues along a parallel path with beam 1817 selected by the second tunable filter 1809 . These two beams are positionally shifted by virtue of beam repositioner 1816 .
  • This structure produces the same result as a recoupling mirror, except that the mirror is parallel to the surface of the substrate. Because the mirror is suspended a fixed distance beyond the substrate surface, the position of the point of incidence on the opposite substrate interface is shifted towards the right. This shift is directly determined by the height of the repositioner.
  • the beam 1819 containing the unselected wavelengths, is also shifted by virtue of repositioner 1818 .
  • the result is that all three beams are equally separated when they are incident on an array of decoupling switches 1820 and 1824 . These serve selectively to redirect the beams into one of two optical combiners, 1828 being one of them or into detector/absorber 1830 .
  • the optical combiners may be fabricated using a variety of techniques.
  • a polymeric film patterned into the form of a pillar with its top formed into a lens using reactive ion etching is one approach.
  • the absorber/detector comprising a semiconductor device that has been bonded to the substrate, serves to allow the measurement of the output power of the mixer.
  • Optical superstructures 1829 support external optical components and provide a hermetic package for the mixer.
  • planar IMods and a substrate waveguide provide a family of optical devices that are easily fabricated, configured, and coupled to the outside world because the devices reside on the waveguide and/or on the superstructure and are capable of operating on light which is propagating within the waveguide, and between the waveguide and the superstructure. Because all of the components are fabricated in a planar fashion, economies of scale can be achieved by bulk fabrication over large areas, and the different pieces maybe aligned and bonded easily and precisely. In addition, because all of the active components exhibit actuation in a direction normal to the substrate, they are relatively simple to fabricate and drive, compared to more elaborate non-planar mirrors and beams. Active electronic components may be bonded to either the superstructure or the substrate/waveguide to increase functionality. Alternatively, active devices may be fabricated as a part of the superstructure, particularly if it is a semiconductor such as silicon or gallium arsenide.
  • IMods may take advantage of manufacturing techniques which are akin to those of the printing industry.
  • These kinds of processes typically involve a “substrate” which is flexible and in the form of a continuous sheet of say paper or plastic.
  • web fed processes they usually involve a continuous roll of the substrate material which is fed into a series of tools, each of which selectively coats the substrate with ink in order to sequentially build up a full color graphical image.
  • Such processes are of interest due to the high speeds with which product can be produced.
  • FIG. 19 is a representation of such a sequence applied to the fabrication of a single IMod and, by extension, to the fabrication of arrays of IMods or other microelectromechanical structures.
  • Web source 1900 is a roll of the substrate material such as transparent plastic.
  • a representative area 1902 on a section of material from the roll contains, for the purposes of this description, only a single device.
  • Embossing tool 1904 impresses a pattern of depressions into the plastic sheet. This can be accomplished by a metal master which has the appropriate pattern of protrusions etched on it.
  • the metal master is mounted on a drum that is pressed against the sheet with enough pressure to deform the plastic to form the depressions.
  • View 1906 illustrates this.
  • Coater 1908 deposits thin layers of material using well known thin film deposition processes, such as sputtering or evaporation. The result is a stack 1910 of four films comprising an oxide, a metal, an oxide, and a sacrificial film. These materials correspond to the induced absorber IMod design.
  • a tool 1912 dispenses, cures, and exposes photoresist for patterning these layers. Once the pattern has been defined, the film etching occurs in tool 1914 . Alternatively, patterning may be accomplished using a process known as laser ablation.
  • a laser is scanned over the material in a manner that allows it to be synchronized with the moving substrate.
  • the frequency and power of the laser is such that it can evaporate the materials of interest to feature sizes that are on the order of microns.
  • the frequency of the laser is tuned so that it only interacts with the materials on the substrate and not the substrate itself. Because the evaporation occurs so quickly, the substrate is heated only minimally.
  • Packaging of the resulting devices is accomplished by bonding flexible sheet 1933 to the top surface of the substrate sheet. This is also supplied by a continuous roll 1936 that has been coated with a hermetic film, such as a metal, using coating tool 1934 . The two sheets are joined using bonding tool 1937 , to produce the resulting packaged device 1940 .
  • Residual stress is a factor in the design and fabrication of MEM structures. In IMods, and other structures in which structural members have been mechanically released during the fabrication process, the residual stress determines the resulting geometry of the member.
  • the IMod as an interferometric device, is sensitive to variations in the resulting geometry of the movable membrane.
  • the reflected, or in other design cases transmitted, color is a direct function of the airgap spacing of the cavity. Consequently, variations in this distance along the length of a cavity can result in unacceptable variations in color.
  • this property is a useful tool in determining the residual stress of the structure itself, because the variations in the color can be used to determine the variations and degree of deformation in the membrane. Knowing the deformed state of any material allows for a determination of the residual stresses in the material. Computer modeling programs and algorithms can use two-dimensional data on the deformation state to determine this.
  • the IMod structure can provide a tool for making this assessment.
  • FIGS. 20A and 20B show examples of how an IMod may be used in this fashion.
  • IMods, 2000 , and 2002 are shown from the perspective of the side and the bottom (i.e. viewed through the substrate). They are of a double cantilever and single cantilever form respectively. In this case, the structural material has no residual stresses, and both membranes exhibit no deformation. As viewed through the substrate, the devices exhibit a uniform color that is determined by the thickness of the spacer layer upon which they were formed.
  • IMods 2004 and 2006 are shown with a stress gradient that is more compressive on the top than it is on the bottom. The structural membranes exhibit a deformation as a result, and the bottom view reveals the nature of the color change that would result.
  • color region 2016 For example if color region 2016 were green, then color region 2014 might be blue because it is closer to the substrate. Conversely, color region 2018 (shown on the double cantilever) might be red because it is farther away. IMods 2008 and 2010 are shown in a state where the stress gradient exhibits higher tensile stress on the top than on the bottom. The structural members are deformed appropriately, and the color regions change as a result. In this case, region 2020 is red, while region 2022 is blue.
  • Wafer 2030 comprises an array of IMod structures consisting of both single and double cantilevered membranes with varying lengths and widths.
  • the structural membranes are fabricated from a material whose mechanical and residual stress properties are well characterized. Many materials are possible, subject to the limitations of the requisite reflectivity that can be quite low given that the IMods in this case are not to be used for display purposes. Good candidates would include materials in crystalline form (silicon, aluminum, germanium) which are or can be made compatible from a fabrication standpoint, exhibit some degree of reflectivity, and whose mechanical properties can or have been characterized to a high degree of accuracy.
  • test structures are fabricated and released so that they are freestanding. If the materials are without stress, then the structures should exhibit no color variations. Should this not be the case, however, then the color states or color maps may be recorded by use of a high resolution imaging device 2034 , which can obtain images of high magnification via optical system 2032 .
  • the imaging device is connected to a computer system 2036 , upon which resides hardware and capable of recording and processing the image data.
  • the hardware could comprise readily available high speed processing boards to perform numerical calculations at high rates of speed.
  • the software may consist of collection routines to collect color information and calculate surface deformations.
  • the core routine would use the deformation data to determine the optimal combination of uniform stress and stress gradient across the thickness of the membrane, which is capable of producing the overall shape.
  • One mode of use could be to generate a collection of “virgin” test wafers with detailed records of their non-deposited stress states, to be put away for later use.
  • a test wafer is selected and the film is deposited on top of it.
  • the deposited film alters the geometry of the structures and consequently their color maps.
  • the color maps of the test wafer both before and after may be compared and an accurate assessment of the residual stress in the deposited film made.
  • the test structures may also be designed to be actuated after deposition. Observation of their behavior during actuation with the newly deposited films can provide even more information about the residual stress states as well as the change in the film properties over many actuation cycles.
  • This technique may also be used to determine the stress of films as they are being deposited.
  • an optical path may be created allowing the imaging system to view the structures and track the change of their color maps in real time. This would facilitate real-time feedback systems for controlling deposition parameters in an attempt to control residual stress in this manner.
  • the software and hardware may “interrogate” the test wafer on a periodic basis and allow the deposition tool operator to alter conditions as the film grows.
  • Overall this system is superior to other techniques for measuring residual stress, which either rely on electromechanical actuation alone, or utilize expensive and complex interferometric systems to measure the deformation of fabricated structures.
  • the former suffers from a need to provide drive electronics to a large array of devices, and inaccuracies in measuring displacement electronically.
  • the latter is subject to the optical properties of the films under observation, and the complexity of the required external optics and hardware.
  • FIG. 21A illustrates one form of the discontinuous film.
  • Substrate 2100 could be a metal, dielectric, or semiconductor, which has had contours 2104 , 2106 , and 2108 etched into its surface.
  • the contours, comprising individual structural profiles which should have a height 2110 that is some fraction of the wavelength of light of interest, are etched using photolithographic and chemical etching techniques to achieve profiles which are similar to those illustrated by, 2104 (triangular), 2106 , (cylindrical) and 2108 (klopfenstein taper).
  • the effective diameter of the base 2102 of any of the individual profiles is also on the order of the height of the pattern. While each contour is slightly different, they all share in common the property that as one traverses from the incident into the substrate, the effective index of refraction goes gradually from that of the incident medium, to that of the film substrate 2100 itself. Structures of this type act as superior antireflection coatings, compared to those made from combinations of thin films, because they do not suffer as much from angular dependencies. Thus, they remain highly antireflective from a broader range of incident angles.
  • FIG. 21B reveals a coating 2120 that has been deposited on substrate 2122 and could also be of a metal, dielectric, or semiconductor.
  • the film in this case, is still in the early stages of formation, somewhere below 1000 angstroms in thickness.
  • films undergo a gradual nucleation process, forming material localities that grow larger and larger until they begin to join together and, at some point, form a continuous film.
  • 2124 shows a top view of this film.
  • the optical properties of films in the early stage differ from that of the continuous film. For metals, the film tends to exhibit higher losses than its continuous equivalent.
  • FIG. 21C illustrates a third form of discontinuous film.
  • film 2130 has been deposited on substrate 2132 to a thickness, at least a thousand angstroms, such that it is considered continuous.
  • a pattern of “subwavelength” (i.e. a diameter smaller than the wavelength of interest) holes 2134 is produced in the material using techniques which are similar to the self-assembly approach described earlier.
  • the polymer can act as a mask for transferring the etch pattern into the underlying material, and the holes etched using reactive ion etch techniques. Because the material is continuous, but perforated, it does not act like the early stage film of FIG. 21B.
  • All three of these types of discontinuous films are candidates for inclusion into an IMod structure. That is to say they could act as one or more of the material films in the static and/or movable portions of an IMod structure. All three exhibit unique optical properties which can be manipulated in ways that rely primarily on the structure and geometry of the individual film instead of a combination of films with varying thickness. They can be used in conjunction with other electronic, optical, and mechanical elements of an IMod that they could comprise. In very simple cases, the optical properties of each of these films may be changed by bringing them into direct contact or close proximity to other films via surface conduction or optical interference. This can occur by directly altering the conductivity of the film, and/or by altering the effective refractive index of its surrounding medium. Thus more complex optical responses in an individual IMod may be obtained with simpler structures that have less complex fabrication processes.

Abstract

An interference modulator (Imod) incorporates anti-reflection coatings and/or micro-fabricated supplemental lighting sources. An efficient drive scheme is provided for matrix addressed arrays of IMods or other micromechanical devices. An improved color scheme provides greater flexibility. Electronic hardware can be field reconfigured to accommodate different display formats and/or application functions. An IMod's electromechanical behavior can be decoupled from its optical behavior. An improved actuation means is provided, some one of which may be hidden from view. An IMod or IMod array is fabricated and used in conjunction with a MEMS switch or switch array. An IMod can be used for optical switching and modulation. Some IMods incorporate 2-D and 3-D photonic structures. A variety of applications for the modulation of light are discussed. A MEMS manufacturing and packaging approach is provided based on a continuous web fed process. IMods can be used as test structures for the evaluation of residual stress in deposited materials.

Description

    BACKGROUND
  • This is a continuation-in-part of U.S. patent application Ser. No. 08/744,253, filed Nov. 5, 1996, which is a continuation of International Application No. PCT/US95/05358, filed May 1, 1995, which is a continuation-in-part of U.S. application Ser. No. 08/238,750, filed May 5, 1994, now issued as U.S. Pat. No. 5,835,255.[0001]
  • This invention relates to interferometric modulation. [0002]
  • Interferometric modulators (IMods) modulate incident light by the manipulation of the optical properties of a micromechanical device. This is accomplished by altering the device's interferometric characteristics using a variety of techniques. IMods lend themselves to a number of applications ranging from flat panels displays and optical computing to fiberoptic modulators and projection displays. The different applications can be addressed using different IMod designs. [0003]
  • SUMMARY
  • In general, in one aspect, the invention features an IMod based display that incorporates anti-reflection coatings and/or micro-fabricated supplemental lighting sources. [0004]
  • In general, in one aspect, the invention features an efficient drive scheme for matrix addressed arrays of IMods or other micromechanical devices. [0005]
  • In general, in one aspect, the invention features a color scheme that provides a greater flexibility. [0006]
  • In general, in one aspect, the invention features electronic hardware that can be field reconfigured to accommodate different display formats and/or application functions. [0007]
  • In general, in one aspect, the invention features an IMod design that decouples the IMod's electromechanical behavior from the IMod's optical behavior. [0008]
  • In general, in one aspect, the invention features an IMod design with alternative actuation means, some one of which may be hidden from view. [0009]
  • In general, in one aspect, the invention features an IMod or IMod array that is fabricated and used in conjunction with a MEMS switch or switch array, and/or MEMS based logic. [0010]
  • In general, in one aspect, the invention features an IMod that can be used for optical switching and modulation. [0011]
  • In general, in one aspect, the invention features IMods that incorporate 2-D and 3-D photonic structures. [0012]
  • In general, in one aspect, the invention features a variety of applications for the modulation of light. [0013]
  • In general, in one aspect, the invention features a MEMS manufacturing and packaging approach based on a continuous web fed process. [0014]
  • In general, in one aspect, the invention features IMods used as test structures for the evaluation of residual stress in deposited films.[0015]
  • DESCRIPTION
  • FIG. 1A is a cross-section of a display substrate incorporating an anti-reflection coating and integrated supplemental lighting. FIG. 1B reveals another scheme for supplemental lighting. [0016]
  • FIG. 2 shows detail of the fabrication process of a micromachined arc lamp source. [0017]
  • FIG. 3 illustrates a bias centered driving scheme for arrays of IMods in a display. [0018]
  • FIG. 4A is a diagram which illustrates a color display scheme based on the concept of “base+pigment”. FIG. 4B reveals a block diagram of a system that provides for field reconfigurable display centric products. FIG. 4C illustrates the concept as applied to a general-purpose display-centric product. [0019]
  • FIG. 5A is a diagram revealing an IMod geometry that decouples the optical behavior from the electromechanical behavior, shown in the un-actuated state. FIG. 5B shows the same IMod in the actuated state. FIG. 5C is a plot showing the performance of this IMod design in the black and white state. FIG. 5D is a plot showing the performance of several color states. [0020]
  • FIG. 6A shows a diagram of an IMod that similarly decouples the optical behavior from the electromechanical, however the support structure is hidden. FIG. 6B shows the same design in the actuated state. [0021]
  • FIG. 7A illustrates an IMod design that utilizes anisotropically stressed membranes, in one state. FIG. 7B shows the same IMod in another state. [0022]
  • FIG. 8A is an illustration showing an IMod that relies on rotational actuation. FIG. 8B reveals the fabrication sequence of the rotational IMod design. [0023]
  • FIG. 9A is a block diagram of a MEMS switch. FIG. 9B is a block diagram of a row driver based on MEMS switches. FIG. 9C is a block diagram of a column driver based on MEMS switches. FIG. 9D is a block diagram of a NAND gate based on MEMS switches. FIG. 9E is a block diagram of a display system incorporating MEMS based logic and driver components. [0024]
  • FIG. 10A is a drawing that reveals the structure, fabrication, and operation of a MEMS switch. FIG. 10B illustrates two alternative switch designs. [0025]
  • FIG. 11A is a drawing that shows examples of mirroring based 2-D photonic structure. FIG. 11B is a drawing of a periodic 2-D photonic structure. [0026]
  • FIG. 12 is a diagram which revealing an example of a 3-D photonic structure. [0027]
  • FIG. 13A is a drawing illustrating an IMod incorporating a mirroring structure in the un-actuated state. FIG. 13B is the same IMod in the actuated state. FIG. 13C shows an IMod incorporating periodic 2-D photonic structure. [0028]
  • FIG. 14A illustrates and IMod design which acts as an optical switch. FIG. 14B shows a variation of this design that acts as an optical attenuator. [0029]
  • FIG. 15A is a diagram of an IMod design that functions as an optical switch or optical decoupler. FIG. 15B illustrates how combinations of these IMods can act as a N×N optical switch. [0030]
  • FIG. 16 shows the fabrication sequence for a tunable IMod structure. [0031]
  • FIG. 17A illustrates how the tunable IMod structure can be incorporated into a wavelength selective switch. FIG. 17B further illustrates how the wavelength selective switch may incorporate solid state devices. FIG. 17C illustrates how bump-bonded components may be intergrated. [0032]
  • FIG. 18A is a schematic representation of a two-channel equalizer/mixer. FIG. 18B illustrates how the equalizer/mixer may be implemented using IMod based components. [0033]
  • FIG. 19 is a diagram illustrating a continuous web-based fabrication process. [0034]
  • FIG. 20 illustrates how IMod based test structures may be used as tools for stress measurement. [0035]
  • FIGS. [0036] 21A-21C Describe.
  • Anti-Reflective Coatings
  • An attribute of one previously described IMod design (the induced absorber design described in U.S. patent application Ser. No. 08/554,630, filed on Nov. 6, 1995, and incorporated by reference) is the efficiency of its dark state, in which it can absorb as much as 99.7% of light which is incident upon it. This is useful in reflective displays. In the described design, the IMod reflects light of a certain color in the un-actuated state, and absorbs light in the actuated state. [0037]
  • Because the IMod array resides on a substrate, the potential for absorption is diminished by the inherent reflection of the substrate. In the case of a glass substrate, the amount of reflection is generally about 4% across the visible spectrum. Thus, despite the absorptive capability of the IMod structure, a dark state can only be as dark as the front surface reflection from the substrate will permit. [0038]
  • One way to improve the overall performance of an IMod based display is by the incorporation of anti-reflection coatings (AR coatings). These coatings can comprise one or more layers of dielectric films deposited on the surface of a substrate and are designed to reduce the reflection from that surface. There are many different possible configurations for such films and design and fabrication is a well known art. One simple film design is a single coating of magnesium fluoride approximately one-quarter wave thick. Another example utilizes a quarter wave film of lead fluoride deposited on the glass, followed by a quarter wave film of magnesium fluoride, with yet a third example interposing a film of zinc sulfide between the two. [0039]
  • FIG. 1A illustrates one way in which an AR coating may be incorporated into an IMod display to improve the performance of the display system. In FIG. 1A, AR coating [0040] 100, which, as stated, could comprise one or more thin films, is deposited on the surface of glass layer 102 bonded to glass substrate 106, on the opposite side of which is fabricated IMod array 108. The presence of AR coating 100 reduces the amount of incident light 109 reflected from the surface by coupling more of it into the glass layer 102. The result is that more of the incident light is acted upon by the IMod array and a darker display state can be obtained when the IMod is operating in the absorptive mode. The AR coating 100 could also be deposited directly on the surface of glass substrate 106 on the side opposite that of the IMod array.
  • Integrated Lighting
  • FIG. 1A also shows how supplemental lighting may be supplied to such a display. In this case an array of microscopic arc lamps, [0041] 104, is fabricated into glass layer 102. Arc lamps are efficient suppliers of light. Historically, arc lamps have been fabricated using techniques relevant to the fabrication of ordinary light bulbs. A typical version of such a lamp is described in U.S. Pat. No. 4,987,496. A glass vessel is built, and electrodes, fabricated separately, are enclosed in the vessel. After filling with an appropriate gas, the vessel is sealed. Although such bulbs may be made small, their method of manufacture may not be suited to the fabrication of large monolithic arrays of such bulbs.
  • Techniques used in the manufacture of micromechanical structures may be applied to the fabrication of microscopic discharge or arc lamps. Because of the microscopic size of these “micro-lamps”, the voltages and currents to drive them are significantly lower than those required to supply arc lamps fabricated using conventional means and sizes. In the example of FIG. 1A, the array is fabricated such that [0042] light 113 emitted by the lamps is directed towards the IMod array 108 by an inherent reflector layer 111, which is described below.
  • FIG. 2 provides detail on how one such lamp, optimized for a flat panel display, could be fabricated. The sequence is described as follows. As seen in [0043] step 1, glass layer 200 is etched to form a reflector bowl 201 using wet or dry chemical etching. The depth and shape of the bowl are determined by the required area of illumination for each lamp. A shallow bowl would produce a broad reflected beam spread while a parabola would tend to collimate the reflected light. The diameter of the bowl could vary from 10 to several hundred microns. This dimension is determined by the amount of display area that can be acceptably obscured from the viewer's perspective. It is also a function of the density of the array of micro-lamps. Using standard deposition techniques, e.g., sputtering, and standard photolithographic techniques, a reflector/metal halide layer 204 and sacrificial layer 202 are deposited and patterned. The reflector/metal halide layer could be a film stack comprising aluminum (the reflector) and metal halides such as thallium iodide, potassium iodide, and indium iodide. The metal halide, while not essential, can enhance the properties of the light that is generated. The sacrificial layer could be a layer such as silicon, for example.
  • Next, [0044] electrode layer 206 is deposited and patterned to form two separate electrodes. This material could be a refractory metal like tungsten and would have a thickness that is sufficient to provide mechanical support, on the order of several thousand angstroms. Then sacrificial layer 202 is removed using a dry release technique. The assembly (in the form of an array of such lamps) is sealed by bonding to a glass plate like substrate 106 (shown in FIG. 1A) such that the reflector faces the plate. A gas, such as xenon, is used to backfill the cavities, formed by the lamps during the sealing process, to a pressure of approximately one atmosphere. This could be accomplished by performing the sealing process in an airtight chamber that has been previously filled with Xenon.
  • The application of sufficient voltage to the electrodes of each lamp will result in an electrical discharge, in the gas between the ends of the electrodes, and the emission of light [0045] 205 in a direction away from the reflector 204. This voltage could be as low as several tens of volts if the gap spacing is on the order of several hundred microns or less. If the electrode material is deposited with minimal stress, the sacrificial layer, 202, will determine the position of the electrodes within the bowl. In this case, the thickness is chosen to position the discharge at the focal point of the bowl. Should there be residual stress, which would cause the electrodes to move when released, then thickness is chosen to compensate for this movement. In general the thickness will be some fraction of the depth of the bowl, from several to tens of microns.
  • Referring again to FIG. 1A, the light is shown traveling along a [0046] path 113. Thus light is emitted towards the IMod array, where it is acted on and subsequently reflected by the array along paths 110, towards interface 107 and the viewer 111.
  • The lamps may be fabricated without including the reflector layer so that they may emit light omnidirectionally. [0047]
  • Lamps fabricated with or without the reflector may be used in a variety of applications requiring microscopic light sources or light source arrays. These could include projection displays, backlights for emissive flat panel displays, or ordinary light sources for internal (homes, buildings) or external (automobiles, flashlights) use. [0048]
  • Referring to FIG. 1B, an alternative supplemental lighting approach is shown. [0049] Light guide 118 comprises a glass or plastic layer that has been bonded to substrate 112. Light source 116 which could comprise any number of emissive sources such as fluorescent tubes, LED arrays, or the aforementioned micro-lamp arrays, is mounted on opposite sides of the light guide. The light 122 is coupled into the light guide using a collimator 120 such that most of the light is trapped within the guide via total internal reflection. Scatter pad 124 is an area of the light guide that has been roughened using wet or dry chemical means. The scatter pad is coated with a material or thin film stack 126 which presents a reflective surface towards substrate 112 and an absorbing surface towards the viewer 128.
  • When light trapped within the guide is incident upon the scatter pad, the conditions for total internal reflection are violated and some [0050] portion 129 of the light scatters in all directions. Scattered light which would normally escape into the surrounding medium, i.e. towards the viewer, 128, is reflected into substrate 112 due to the presence of the reflective side of coating 126. Like the aforementioned micro-lamps, the scatter pads are fabricated in an array, with each pad dimensioned such that the portion of the display that it obscures from direct view is hardly noticeable. While these dimensions are small, on the order of tens of microns, they can provide sufficient supplemental lighting because of the inherent optical efficiency of the underlying IMod array 114. The shape of the scatter pad may be circular, rectangular, or of arbitrary shapes which may minimize their perception by the viewer.
  • Addressing Elements In An Array
  • In order to actuate arrays of IMods in a coordinated fashion for display purposes, a sequence of voltages is applied to the rows and columns of the array in what is generally known as a “line at a time” fashion. The basic concept is to apply a sufficient voltage to a particular row such that voltages applied to selected columns cause corresponding elements on the selected row to actuate or release depending on the column voltage. The thresholds and applied voltages must be such that only the elements on the selected row are affected by the application of the column voltages. An entire array can be addressed over a period of time by sequentially selecting the set of rows comprising the display. [0051]
  • One simple way of accomplishing this is shown in FIG. 3. [0052] Hysteresis curve 300 is an idealized representation of the electroptical response of a reflective IMod. The x-axis shows applied voltage, and the y-axis shows amplitude of reflected light. The IMod exhibits hysteresis because, as the voltage is increased past the pull-in threshold, the IMod structure actuates and becomes highly absorbing. When the applied voltage is decreased, the applied voltage must be brought below the release threshold in order for the structure to move back into the un-actuated state. The difference between the pull-in and release thresholds produces the hysteresis window. The hysteresis effect, as well as an alternative addressing scheme, is discussed in U.S. patent application Ser. No. 08,744,253, filed on Nov. 5, 1996, and incorporated by reference. The hysteresis window can be exploited by maintaining a bias voltage Vbias, at all times, to keep the IMod in whatever state it was driven or released into. Voltages Voff and Von correspond to voltages required to actuate or release the IMod structure. The array is driven by applying voltages to the columns and rows using electronics known as column and row drivers. IMods have been fabricated with a pullin threshold of 6 volts, and a release threshold of 3 volts. For such a device, typical values for Vbias, Voff, and Von are 4.5 volts, 0 volts, and 9 volts respectively.
  • In FIG. 3, timing diagram [0053] 302 illustrates the kind of waveforms that may be applied to actuate an array of IMods that exhibit a hysteresis curve resembling curve 300. A total of five voltages, two column voltages and three row voltages, are required. The voltages are selected such that Vcol1 is exactly twice the value of Vbias, and Vcol0 is zero volts. The row voltages are selected so that the difference between Vsel F0 and Vcol0 equals Von, and the difference between Vsel F0 and Vcol1 equals Voff. Conversely, the difference between Vsel F1 and Vcol1 equals Von, and the difference between Vsel F1 and Vcol0 equals Voff.
  • The addressing occurs in alternating [0054] frames 0 and 1. In a typical addressing sequence, data for row 0 is loaded into the column drivers during frame 0 resulting in either a voltage level of Vcol1 or Vcol0 being applied depending on whether the data is a binary one or zero respectively. When the data has settled, row driver 0 applies a select pulse with the value of Vsel F0. This results in any IMods on columns with Vcol0 present becoming actuated, and IMods on columns with Vcol1 present, releasing. The data for the next row is loaded into the columns and a select pulse applied to that row and so on sequentially until the end of the display is reached. Addressing is then begun again with row 0; however this time the addressing occurs within frame 1.
  • The difference between the frames is that the correspondence between data and column voltages is switched, a binary zero is now represented by Vcol[0055] 0, and the row select pulse is now at the level of Vsel F1. Using this technique, the overall polarity of the voltages applied to the display array is alternated with each frame. This is useful, especially for MEMS based displays, because it allows for the compensation of any DC level charge buildup that can occur when only voltages of a single polarity are applied. The buildup of a charge within the structure can significantly offset the electroptical curve of the IMod or other MEM device.
  • Color Display Schemes
  • Because the IMod is a versatile device with a variety of potential optical responses, a number of different color display schemes are enabled having different attributes. One potential scheme exploits the fact that there are binary IMod designs that are capable of achieving color states, black states, and white states in the same IMod. This capability can be used to achieve a color scheme that can be described as “base+pigment”. This terminology is used because the approach is analogous to the way in which paint colors are produced by adding pigments to a white base to achieve a desired color. Using this approach, a particular paint can attain any color in the spectrum and any level of saturation by controlling the content and amount of pigments that are added to the base. The same can be said for a display that incorporates colored and black and white pixels. [0056]
  • As shown in FIG. 4A, a [0057] pixel 400 comprises five subpixel elements, 402, 404, 406, and 408, with each subpixel capable of reflecting red, green, blue, and white respectively. All of the subpixels are capable of a black state. Control over the brightness of each subpixel can be accomplished using pulse width modulation related techniques as discussed in U.S. Pat. No. 5,835,255. In conjunction with properly selected relative subpixel sizes, this results in a pixel over which a very large degree of control can be exercised of brightness and saturation. For example, by minimizing the overall brightness of the white subpixels, highly saturated colors may be achieved. Conversely, by minimizing the brightness of the color subpixels, or by maximizing them in conjunction with the white subpixels, a bright black and white mode may be achieved. All variations in between are obviously attainable as well.
  • User Control of Color Scheme
  • The previously described color scheme, as well as the inherent attributes of an IMod-based display in terms of resolution, gray scale depth, and refresh rate, provides flexibility in display performance. Given this range, it is useful to give the user of a product containing such a display control over its general characteristics. Alternatively, it may be advantageous for the display to automatically adapt to different viewing needs. [0058]
  • For example, a user may want to use a product in black and white mode if, some context, only text were being viewed. In another situation, however, the user may want to view high quality color still images, or in yet another mode may want to view live video. Each of these modes, while potentially within the range of a given IMod display configuration, requires tradeoffs in particular attributes. Tradeoffs include the need for low refresh rates if high-resolution imagery is required, or the ability to achieve high gray scale depth if only black and white is requested. [0059]
  • To give the user this kind of on demand flexibility, the controller hardware may be reconfigurable to some extent. Tradeoffs are a consequence of the fact that any display has only a certain amount of bandwidth, which is fundamentally limited by the response time of the pixel elements and thus determines the amount of information which can be displayed at a given time. [0060]
  • One display architecture that could provide such flexibility is illustrated in FIG. 4B. In this block diagram, [0061] controller logic 412 is implemented using one of a variety of IC technologies, including programmable logic devices (PLAs) and field programmable gate arrays (FPGAs), which allow for the functionality of the component to be altered or reconfigured after it leaves the factory. Such devices, which are traditionally used for specialized applications such as digital signal processing or image compression, can provide the high performance necessary for such processing, while supplying flexibility during the design stage of products incorporating such devices.
  • The [0062] controller 412 provides signals and data to the driver electronics 414 and 416 for addressing the display 418. Conventional controllers are based on IC's or Application Specific Integrated Circuits (ASICs), which are effectively “programmed” by virtue of their design during manufacture. The term program, in this case, means an internal chip layout comprising numerous basic and higher level logical components (logic gates and logic modules or assemblies of gates). By using field programmable devices such PLAs or FPGAs, different display configurations may be loaded into the display controller component in the form of hardware applications or “hardapps”, from a component 410, which could be memory or a conventional microprocessor and memory. The memory could be in the form of EEPROMS or other reprogrammable storage devices, and the microprocessor could take on the form of simple microcontroller whose function is to load the hardapp from memory into the FPGA, unless this were performed by whatever processor is associated with the general functioning of the product. This approach is advantageous because with relatively simple circuitry it is possible to achieve a wide variety of different display performance configurations and mixed display scan rates, along with the potential to combine them.
  • One portion of the screen, for example, might be operated as a low-resolution text entry area, while another provides high quality rendition of an incoming email. This could be accomplished, within the overall bandwidth limitations of the display, by varying the refresh rate and # of scans for different segments of the display. The low-resolution text area could be scanned rapidly and only once or twice corresponding to one or two bits of gray scale depth. The high rendition email area could be scanned rapidly and with three or four passes corresponding to three or four bits of grayscale. [0063]
  • Configurable Electronic Products
  • This idea may be generalized to include not just the functionality of the display controller, but also the functionality of the overall product. FIG. 4C shows a configuration of a generic portable [0064] electronic product 418 that has a programmable logic device or equivalent at its core 420. In many display centric personal electronic products, such as PDAs (personal digital assistants) and electronic organizers, the central processor is a variant of a RISC processor that uses a reduced instruction set. While RISC processors are more efficient versions of CPUs that power most personal computers, they are still general-purpose processors that expend a lot of energy performing repetitive tasks such as retrieving instructions from memory.
  • In personal computers, power consumption is not an issue, and the user typically wants to run a large number of complicated software applications. The opposite is true of typical display centric/personal electronic products. They are required to consume low power and offer a relatively small number of relatively simple programs. Such a regime favors implementing the special purpose programs, which could include web browsers, calendar functions, drawing programs, telephone/address databases, and handwriting/speech recognition among others, as hardapps. Thus whenever a particular mode of functionality, e.g., a program, is required by the user, the core processor is reconfigured with the appropriate hardapp and the user interacts with the product. Thus the hardapp processor, a variant of a Field Programmable Gate Array has the hardapp (i.e. program) manifested in its internal logic and connections, which get re-arranged and re-wired every time a new hardapp is loaded. Numerous suppliers of these components also provide an application development system that allows a specialized programming language (a hardware description language) to be reduced into the logical representation that makes up the appropriate processor. Numerous efforts are also underway to simplify the process or reducing higher level programming languages into this form as well. One approach to realizing such a processor is detailed in the paper Kouichi Nagami, et al, “Plastic Cell Architecture: Towards Reconfigurable Computing for General-Purpose”, Proc. IEEE Workshop on FPGA-based Custom Computing Machines, 1998. [0065]
  • Referring again to FIG. 4C, the [0066] hardapp processor 420 is shown at the center of a collection of I/O devices and peripherals that it will utilize, modify, or ignore based on the nature and function of the hardapp currently loaded. The hardapps can be loaded from memory 422 resident in the product, or from an external source via RF or IR interface, 424, which could pull hardapps from the internet, cellular networks, or other electronic devices, along with content for a particular hardapp application. Other examples of hardapps include voice recognition or speech synthesis algorithms for the audio interface 432, handwriting recognition algorithms for pen input 426, and image compression and processing modes for image input device 430. Such a product could perform a myriad of functions by virtue of its major components, the display as the primary user interface and the reconfigurable core processor. Total power consumption for such a device could be on the order of tens of milliwatts versus the several hundred milliwatts consumed by existing products.
  • Decoupling Electromechanical Aspects From Optical Aspects
  • U.S. patent application Ser. Nos. 08/769,947, filed on Dec. 19, 1996, and 09/056,975 filed on Apr. 4, 1998, and incorporated by reference, have described IMod designs that propose to decouple the electromechanical performance of an IMod from its optical performance. Another way in which this may be accomplished is illustrated in FIGS. 5A and 5B. This design uses electrostatic forces to alter the geometry of an interferometric cavity. [0067] Electrode 502 is fabricated on substrate 500 and electrically isolated from membrane/mirror 506 by insulating film 504. Electrode 502 functions only as an electrode, not also as a mirror.
  • An [0068] optical cavity 505 is formed between membrane/mirror 506 and secondary mirror 508. Support for secondary mirror 508 is provided by a transparent superstructure 510, which can be a thick deposited organic, such as SU-8, polyimide, or an inorganic material. With no voltage applied, the membrane/mirror 506, maintains a certain position shown in FIG. 5A, relative to secondary mirror 508, as determined by the thickness of the sacrificial layers deposited during manufacture. For an actuation voltage of about four volts a thickness of several thousand angstroms might be appropriate. If the secondary mirror is made from a suitable material, say chromium, and the mirror/membrane made from a reflective material such as aluminum, then the structure will reflect certain frequencies of light 511 which may be perceived by viewer 512. In particular, if the chromium is thin enough to be semitransparent, about 40 angstroms, and the aluminum sufficiently thick, at least 500 angstroms, as to be opaque, then the structure may have a wide variety of optical responses. FIGS. 5C and 5D show examples of black and white and color responses respectively, all of which are determined by the cavity length, and the thickness of the constituent layers.
  • FIG. 5B shows the result of a voltage applied between [0069] primary electrode 502 and membrane mirror 506. The membrane/mirror is vertically displaced thus changing the length of the optical cavity and therefore the optical properties of the IMod. FIG. 5C shows one kind of reflective optical response which is possible with the two states, illustrating the black state 521 when the device is fully actuated, and a white state 523 when the device is not. FIG. 5D shows an optical response with color peaks 525, 527, and 529, corresponding to the colors blue, green, and red respectively. The electromechanical behavior of the device thus may be controlled independently of the optical performance. Materials and configuration of the primary electrode, which influence the electromechanics, may be selected independently of the materials comprising the secondary mirror, because they play no role in the optical performance of the IMod. This design may be fabricated using processes and techniques of surface micromachining, for example, the ones described in U.S. patent application Ser. No. 08,688,710, filed on Jul. 31, 1996 and incorporated by reference.
  • In another example, shown in FIG. 6A, the support structure for the [0070] IMod 606 is positioned to be hidden by the membrane/mirror 608. In this way the amount of inactive area is effectively reduced because the viewer sees only the area covered by the membrane/mirror and the minimum space between adjoining IMods. This is unlike the structure in FIG. 5A where the membrane supports are visible and constitute inactive and inaccurate, from a color standpoint, area. FIG. 6B, reveals the same structure in the actuated state.
  • In FIG. 7A, another geometric configuration is illustrated for use in an IMod structure. This design is similar to one shown in U.S. Pat. No. 5,638,084. That design relied upon an opaque plastic membrane that is anisotropically stressed so that it naturally resides in a curled state. Application of a voltage flattens the membrane to provide a MEMS-based light shutter. [0071]
  • The device's functionality may be improved by making it interferometric. The IMod variation is shown in FIG. 7A where [0072] thin film stack 704 is like the dielectric/conductor/insulator stack which is the basis for the induced absorber IMod design discussed in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996 and incorporated by reference.
  • Application of a voltage between [0073] aluminum membrane 702 and stack 704 causes the membrane 702 to lie flat against the stack. During fabrication, aluminum 702, which could also include other reflective metals (silver, copper, nickel), or dielectrics or organic materials which have been undercoated with a reflective metal, is deposited on a thin sacrificial layer so that it may be released, using wet etch or gas phase release techniques. Aluminum membrane 702 is further mechanically secured to the substrate by a support tab 716, which is deposited directly on optical stack 704. Because of this, light that is incident on the area where the tab and the stack overlap is absorbed making this mechanically inactive area optically inactive as well. This technique eliminates the need for a separate black mask in this and other IMod designs.
  • [0074] Incident light 706 is either completely absorbed or a particular frequency of light 708, is reflected depending on the spacing of the layers of the stack. The optical behavior is like that of the induced absorber IMod described in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996, and incorporated by reference.
  • FIG. 7B shows the device configuration when no voltage is applied. The residual stresses in the membrane induce it to curl up into a tightly wound coil. The residual stresses can be imparted by deposition of a thin layer of [0075] material 718 on top of the membrane, which has extremely high residual tensile stress. Chromium is one example in which high stresses may be achieved with a film thickness a low as several hundred angstroms. With the membrane no longer obstructing its path, light beam 706 is allowed to pass through the stack 704 and intersect with plate 710. Plate 710 can reside in a state of being either highly absorbing or highly reflective (of a particular color or white). For the modulator to be used in a reflective display, the optical stack 704 would be designed such that when the device is actuated it would either reflect a particular color (if plate 710 were absorbing) or be absorbing (if plate, 710 were reflective).
  • Rotational Actuation
  • As shown in FIG. 8A, another IMod geometry relies on rotational actuation. Using the processes discussed in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996 and incorporated by reference, [0076] electrode 802, an aluminum film about 1000 angstroms thick, is fabricated on substrate 800. Support post 808 and rotational hinge 810, support shutter 812, upon which a set of reflecting films 813 has been deposited. The support shutter may be an aluminum film which is several thousand angstroms thick. Its X-Y dimensions could be on the order of tens to several hundred microns. The films may be interferometric and designed to reflect particular colors. A fixed interferometric stack in the form of an induced absorber like that described in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996 and incorporated by reference would suffice. They may also comprise polymers infused with color pigments, or they may be aluminum or silver to provide broadband reflection. The electrode 802 and the shutter 812 are designed such that the application of a voltage (e.g., 10 volts) between the two causes the shutter 812 to experience partial or full rotation about the axis of the hinge. Only shutter 818 is shown in a rotated state although typically all of the shutters for a given pixel would be driven in unison by a signal on the common bus electrode 804. Such a shutter would experience a form of electromechanical hysteresis if the hinges and electrode distances were designed such that the electrostatic attraction of the electrodes overcomes the spring tension of the hinge at some point during the rotation. The shutters would thus have two electromechanically stable states.
  • In a transmissive mode of operation, the shutter would either block incident light or allow it to pass through. FIG. 8A illustrates the reflective mode where [0077] incident light 822 is reflected back to the viewer 820. In this mode, and in one state, the shutter either reflects a white light, if the shutter is metallized, or reflects a particular color or set of colors, if it is coated with interferometric films or pigments. Representative thicknesses and resulting colors, for an interferometric stack, are also described in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996 and incorporated by reference. In the other state, the light is allowed to pass through and be absorbed in substrate 800 if the opposite side of the shutter were coated with an absorbing film or films 722. These films could comprise another pigment infused organic film, or an induced absorber stack designed to be absorbing. Conversely, the shutters may be highly absorbing, i.e., black, and the opposite side of substrate 800 coated with highly reflective films 824, or be selectively coated with pigment or interferometric films to reflect colors, along the lines of the color reflecting films described above.
  • Operation of the device may be further enhanced by the addition of [0078] supplementary electrode 814, which provides additional torque to the shutter when charged to a potential that induces electrostatic attraction between supplementary electrode 814 and shutter 812. Supplementary electrode 814 comprises a combination of a conductor 814 and support structure 816. The electrode may comprise a transparent conductor such as ITO that could be about thousand angstroms thick. All of the structures and associated electrodes are machined from materials that are deposited on the surface of a single substrate, i.e. monolithically, and therefore are easily fabricated and reliably actuated due to good control over electrode gap spaces. For example, if such an electrode were mounted on an opposing substrate, variations in the surface of both the device substrate and opposing substrate could combine to produce deviations as much as several microns or more. Thus the voltage required to affect a particular change in behavior could vary by as much as several tens of volts or more. Structures that are monolithic follow substrate surface variations exactly and suffer little such variation.
  • FIG. 8B, steps [0079] 1-7, shows a fabrication sequence for the rotational modulator. In step 1, substrate 830 has been coated with electrode 832 and insulator 834. Typical electrode and insulator materials are aluminum and silicon dioxide, each of a thickness of one thousand angstroms each. These are patterned in step 2. Sacrificial spacer 836, a material such as silicon several microns in thickness, has been deposited and patterned in step 3 and coated with post/hinge/shutter material 838 in step 4. This could be an aluminum alloy or titanium/tungsten alloy about 1000 angstroms thick. In step 5, material 838 has been patterned to form bus electrode 844, support post 840, and shutter 842. Shutter reflector 846 has been deposited and patterned in step 6. In step 7, the sacrificial spacer has been etched away yielding the completed structure. Step 7 also reveals a top view of the structure showing detail of the hinge comprising support posts 848, torsion arm 850, and shutter 852.
  • Switching Elements
  • For IMods that are binary devices only a small number of voltage levels is required to address a display. The driver electronics need not generate analog signals that would be required to achieve gray scale operation. [0080]
  • Thus, the electronics may be implemented using other means as suggested in U.S. patent application Ser. No. 08/769,947, filed on Dec. 19, 1996 and incorporated by reference. In particular the drive electronics and logic functions can be implemented using switch elements based on MEMS. [0081]
  • FIGS. 9A through 9E illustrate the concept. FIG. 9A is a diagram of a basic switch building block with an [0082] input 900 making a connection to output 904 by application of a control signal 902. FIG. 9B illustrates how a row driver could be implemented. The row driver for the addressing scheme described above requires the output of three voltage levels. Application of the appropriate control signals to the row driver allows one of the input voltage levels to be selected for output 903. The input voltages are Vcol1, Vcol0, and Vbias corresponding to 906, 908, and 910 in the figure. Similarly, for the column driver shown in FIG. 9C, the appropriate control signals result in the selection of one or the other input voltage levels for delivery to the output 920. The input voltages are Vsel F1, Vsel F0, and ground, corresponding to 914, 916, and 918 in the figure. FIG. 9D illustrates how a logic device 932, may be implemented, in this case a NAND gate, using basic switch building blocks 934, 936, 938, and 940. All of these components can be configured and combined in a way that allows for the fabrication of the display subsystem shown in FIG. 9E. The subsystem comprises controller logic 926, row driver 924, column driver 928, and display array 930, and uses the addressing scheme described above in FIG. 3.
  • Fabrication of the switch elements as MEMS devices makes it possible to fabricate an entire display system using a single process. The switch fabrication process becomes a subprocess of the IMod fabrication process and is illustrated in FIG. 10A. [0083]
  • [0084] Step 1 shows both a side view and top view of the initial stage. Arrow 1004 indicates the direction of the perspective of the side view. Substrate 1000 has had sacrificial spacer 1002 a silicon layer 2000 angstroms thick deposited and patterned on its surface. In step 2, a structural material, an aluminum alloy several microns thick, has been deposited and patterned to form source beam 1010, drain structure 1008, and gate structure 1006. Several hundred angstroms of a non-corroding metal such as gold, iridium or platinum may be plated onto the structural material at this point to maintain low contact resistance through the life of the switch. Notch 1012 has been etched in source beam 1010 to facilitate the movement of the beam in a plane parallel to that of the substrate. The perspective of the drawing is different in steps 3 and 4, which now compare a front view with a top view. Arrows 1016 indicate the direction of the perspective of the front view. In step 3, the sacrificial material has been etched away leaving the source beam 1010 intact and free to move.
  • When a voltage is applied between the source beam and the gate structure, the [0085] source beam 1010 is deflected towards gate 1006 until it comes into contact with the drain 1008, thereby establishing electrical contact between the source and the drain. The mode of actuation is parallel to the surface of the substrate, thus permitting a fabrication process that is compatible with the main IMod fabrication processes. This process also requires fewer steps than those used to fabricate switches that actuate in a direction normal the substrate surface.
  • FIGS. 10B and 10C illustrates two alternative designs for planar MEM switches. The switch in FIG. 10B differs in that [0086] switch beam 1028 serves to provide contact between drain 1024 and source 1026. In the switch of FIG. 10A, currents that must pass through the source beam to the drain may effect switching thresholds, complicating the design of circuits. This is not the case with switch 1020. The switch in FIG. 10C reveals a further enhancement. In this case, insulator 1040 electrically isolates switch beam 1042 from contact beam 1038. This insulator may be a material such as SiO2 that can be deposited and patterned using conventional techniques. Use of such a switch eliminates the need to electrically isolate switch drive voltages from logic signals in circuits comprising these switches.
  • Multidimensional Photonic Structures
  • In general, IMods feature elements that have useful optical properties and are movable by actuation means with respect to themselves or other electrical, mechanical or optical elements. [0087]
  • Assemblies of thin films to produce interferometric stacks are a subset of a larger class of structures that we shall refer to as multidimensional photonic structures. Broadly, we define a photonic structure as one that has the ability to modify the propagation of electromagnetic waves due to the geometry and associated changes in the refractive index of the structure. Such structures have a dimensional aspect because they interact with light primarily along one or more axes. Structures that are multidimensional have also been referred to as photonic bandgap structures (PBG's) or photonic crystals. The text “Photonic Crystals” by John D. Joannopoulos, et al describes photonic structures that are periodic. [0088]
  • A one-dimensional PBG can occur in the form of a thin film stack. By way of example, FIG. 16 shows the fabrication and end product of an IMod in the form of a dielectric Fabry-Perot filter. Thin film stacks [0089] 1614 and 1618, which could be alternating layers of silicon and silicon dioxide each a quarter wave thick, have been fabricated on a substrate to form an IMod structure that incorporates central cavity 1616. In general, the stack is continuous in the X and Y direction, but has a periodicity in the optical sense in the Z direction due to variations in the refractive index of the material as they are comprised of alternating layers with high and low indices. This structure can be considered one-dimensional because the effect of the periodicity is maximized for waves propagating along one axis, in this case the Z-axis.
  • FIGS. 11A and 11B illustrate two manifestations of a two-dimensional photonic structure. In FIG. 11A, a [0090] microring resonator 1102 can be fabricated from one of a large number of well known materials, an alloy of tantalum pentoxide and silicon dioxide for example, using well known techniques. For a device optimized for wavelengths in the 1.55 um range, typical dimensions are w=1.5 um, h=1.0 um, and r=10 um.
  • Fabricated on a substrate [0091] 1100 (glass is one possibility though there are many others), the structure is essentially a circular waveguide whose refractive index and dimensions w, r, and h determine the frequencies and modes of light which will propagate within it. Such a resonator, if designed correctly, can act as a frequency selective filter for broadband radiation that is coupled into it. In this case, the radiation is generally propagating in the XY plane as indicated by orientation symbol 1101. The one-dimensional analog of this device would be a Fabry-Perot filter made using single layer mirrors. Neither device exhibits a high order optical periodicity, due to the single layer “boundaries” (i.e. mirrors); however, they can be considered photonic structures in the broad sense.
  • A more traditional PBG is shown in FIG. 11B. [0092] Columnar array 1106 presents a periodic variation in refractive index in both the X and Y directions. Electromagnetic radiation propagating through this medium is most significantly affected if it is propagating within the XY plane, indicated by orientation symbol 1103.
  • Because of its periodic nature, the array of FIG. 11B shares attributes with a one-dimensional thin film stack, except for its higher-order dimensionality. The array is periodic in the sense that along some axis through the array, within the XY plane, the index of refraction varies between that of the column material, and that of the surrounding material, which is usually air. Appropriate design of this array, utilizing variations on the same principles applied to the design of thin film stacks, allows for the fabrication of a wide variety of optical responses, (mirrors, bandpass filters, edge filters, etc.) acting on radiation traveling in the XY plane. [0093] Array 1106 in the case shown in FIG. 11B includes a singularity or defect 1108 in the form of a column that, differs in its dimension and/or refractive index. For example, the diameter of this column might be fractionally larger or smaller than the remaining columns (which could be on the order of a quarter wavelength in diameter), or it may be of a different material (perhaps air vs. silicon dioxide). The overall size of the array is determined by the size of the optical system or component that needs to be manipulated. The defect may also occur in the form of the absence of a column or columns (a row), depending on the desired behavior. This structure is analogous to the dielectric Fabry-Perot filter of FIG. 16, but it functions in only two dimensions. In this case, the defect is analogous to the cavity, 1616. The remaining columns are analogous to the adjacent two-dimensional stacks.
  • The relevant dimensions of the structure of FIG. 11B are denoted by column x spacing sx, column y spacing sy, (either of which could be considered the lattice constant), column diameter d, and array height, h. Like the quarter wave stack, the one-dimensional equivalent, column diameters and spacings can be on the order of a quarter wave. The height, h, is determined by the desired propagation modes, with little more than one half wavelength used for single mode propagation. The equations for relating the size of the structures to their effect on light are well known and documented in the text “Photonic Crystals” by John D. Joannopoulos, et al. [0094]
  • This kind of structure may also be fabricated using the same materials and techniques used to fabricate the [0095] resonator 1102. For example, a single film of silicon may be deposited on a glass substrate and patterned, using conventional techniques, and etched using reactive ion etching to produce the high aspect ratio columns. For a wavelength of 1.55 um, the diameter and spacing of the columns could be on the order of 0.5 um and 0.1 um respectively.
  • Photonic structures also make it possible to direct radiation under restrictive geometric constraints. Thus they are quite useful in applications where it is desirable to redirect and/or select certain frequencies or bands of frequencies of light when dimensional constraints are very tight. Waveguides, channeling light propagating in the XY plane, may be fabricated which can force light to make 90 degree turns in a space less than the wavelength of the light. This can be accomplished, for example, by creating the column defect in the form of a linear row, which can act as the waveguide. [0096]
  • A three-dimensional structure is illustrated in FIG. 12. Three-dimensional [0097] periodic structure 1202 acts on radiation propagating in the XY, YZ, and XZ planes. A variety of optical responses may be attained by appropriate design of the structure and selection of its constituent materials. The same design rules apply, however they are applied three-dimensionally here. Defects occur in the form of points, lines, or regions, vs. points and lines, which differ in size and/or refractive index from the surrounding medium. In FIG. 12, the defect 1204 is a single point element but may also be linear or a combination of linear and point elements or regions. For example, a “linear” or “serpentine” array of point defects may be fabricated such that it follows an arbitrary three-dimensional path through the PBG, and acts as a tightly constrained waveguide for light propagating within it. The defect would generally be located internally but is shown on the surface for purposes of illustration. The relevant dimensions of this structure are all illustrated in the figure. The diameter and spacing and materials of the PBG are completely application dependent, however the aforementioned design rules and equations also apply.
  • Three-dimensional PBGs are more complicated to make. Conventional means for fabricating one-dimensional or two-dimensional features, if applied in three dimensions, would involve multiple applications of deposition, pattern, and etch cycles to achieve the third dimension in the structure. Fabrication techniques for building periodic three-dimensional structures include: holographic, where a photosensitive material is exposed to a standing wave and replicates the wave in the form of index variations in the material itself; self-organizing organic or self-assembling materials that rely on innate adhesion and orientation properties of certain co-polymeric materials to create arrays of columnar or spherical structures during the deposition of the material; ceramic approaches that can involve the incorporation of a supply of spherical structures of controlled dimensions into a liquid suspension that, once solidified, organizes the structures, and can be removed by dissolution or high temperature; combinations of these approaches; and others. [0098]
  • Co-polymeric self-assembly techniques are especially interesting because they are both low temperature and require minimal or no photolithography. In general, this technique involves the dissolution of a polymer, polyphenylquinoine-block-polystyrene (PPQmPSn) is one example, into a solvent such as carbon disulfide. After spreading the solution onto a substrate and allowing the solvent to evaporate, a close packed hexagonal arrangement of air filled polymeric spheres results. The process can be repeated multiple times to produce multilayers, the period of the array may be controlled by manipulating the number of repeat units of the components (m and n) of the polymer. Introduction of a nanometer sized colloid comprising metals, oxides, or semiconductors that can have the effect of reducing the period of the array further, as well as increasing the refractive index of the polymer. [0099]
  • Defects may be introduced via direct manipulation of the material on a submicron scale using such tools as focused ion beams or atomic force microscopes. The former may be used to remove or add material in very small selected areas or to alter the optical properties of the material. Material removal occurs when the energetic particle beam, such as that used by a Focused Ion Beam tool, sputters away material in its path. Material addition occurs when the focused ion beam is passed through a volatile metal containing gas such as tungsten hexafluoride (for tungsten conductor) or silicon tetrafluoride (for insulating silicon dioxide). The gas breaks down, and the constituents are deposited where the beam contacts the substrate. Atomic force microscopy may be used to move materials around on the molecular scale. [0100]
  • Another approach involves the use of a technique that can be called micro-electrodeposition and which is described in detail in U.S. Pat. No. 5,641,391. In this approach a single microscopic electrode can be used to define three-dimensional features of submicron resolution using a variety of materials and substrates. Metal “defects” deposited in this way could be subsequently oxidized to form an dielectric defect around which the PBG array could be fabricated using the techniques described above. [0101]
  • The existence of surface features, in the form of patterns of other materials, on the substrate upon which the PBG is fabricated may also serve as a template for the generation of defects within the PBG during its formation. This is particularly relevant to PBG processes that are sensitive to substrate conditions, primarily self-assembly approaches. These features may encourage or inhibit the “growth” of the PBG in a highly localized region around the seed depending on the specific nature of the process. In this way, a pattern of defect “seeds” may be produced and the PBG formed afterwards with the defects created within during the PBG formation process. [0102]
  • Thus, the class of devices known as IMods may be further broadened by incorporating the larger family of multidimensional photonic structures into the modulator itself. Any kind of photonic structure, which is inherently a static device, may now be made dynamic by altering its geometry and/or altering its proximity to other structures. Similarly, the micromechanical Fabry-Perot filter (shown in FIG. 16), comprising two mirrors which are each one-dimensional photonic structures, may be tuned by altering the cavity width electrostatically. [0103]
  • FIG. 13 shows two examples of IMod designs incorporating two-dimensional PBGs. In FIG. 13A, a cutaway diagram reveals a self-supporting [0104] membrane 1304, which has been fabricated with a microring resonator 1306 mounted on the side facing the substrate. Waveguides 1301 and 1302 lying within the bulk of the substrate 1303 are planar and parallel and can be fabricated using known techniques. In FIG. 13A, the IMod is shown in the un-driven state with a finite airgap (number) between the microring and the substrate. The microring is fabricated so that its position overlaps and aligns with the paired waveguides in the substrate below. Dimensions of the microring are identical to the example described above. Crossection 1305 shows the dimensions of the waveguides which could be w=1 um, h=0.5 um, and t=100 nm. In the un-driven state, light 1308, propagates undisturbed in waveguide 1302, and the output beam 1310 is spectrally identical to the input 1308.
  • Driving the IMod to force the microring into intimate contact with the substrate and waveguides alters the optical behavior of the device. Light propagating in [0105] waveguide 1302 may now couple into the microring by the phenomenon of evanescence. The microring, if sized appropriately, acts as an optical resonator coupling a selected frequency from waveguide 1302 and injecting it into waveguide 1301. This is shown in FIG. 13B where light beam 1312 is shown propagating in a direction opposite the direction of light 1308. Such a device may be used as a frequency selective switch that picks particular wavelengths out of a waveguide by the application of a voltage or other driving means required to bring the structure into intimate contact with the underlying waveguides. A static version of this geometry is described in the paper B. E. Little, et al, “Vertically Coupled Microring Resonator Channel Dropping Filter”, IEEE Photonics Technology Letters, vol. 11, no. 2, 1999.
  • Another example is illustrated in FIG. 13C. In this case, a pair of [0106] waveguides 1332 and 1330 and resonator 1314 are fabricated on the substrate in the form of a columnar PBG. The PBG is a uniform array of columns, with the waveguides defined by removing two rows (one for each waveguide), and the resonator defined by removing two columns. Top view 1333 provides more detail of the construction of waveguides 1330 and 1332, and the resonator 1314. Dimensions are dependent on the wavelength of interest as well as materials used. For a wavelength of 1.55 um, the diameter and spacing of the columns could be on the order of 0.5 um and 1 um respectively. The height, h, determines the propagation modes which will be supported and should be slightly more than half the wavelength if only single modes are to be propagated.
  • On the inner surface of the [0107] membrane 1315 are fabricated two isolated columns 1311, which are directed downwards, and have the same dimensions and are of the same material (or optically equivalent) as the columns on the substrate. The resonator and columns are designed to complement each other; there is a corresponding absence of a column in the resonator where the column on the membrane is positioned.
  • When the IMod is in an undriven state, there is a finite [0108] vertical airgap 1312, of at least several hundred nanometers between the PBG and the membrane columns and therefore no optical interaction occurs. The absence of columns in the resonator act like defects, causing coupling between waveguides 1330 and 1332. In this state the device acts as does the one shown in FIG. 13B and selected frequencies of light propagating along waveguide are now injected into waveguide 1332, and propagate in the opposite direction in the form of light 1329.
  • Driving the IMod into contact with the PBG, however, places the columns into the resonator altering its behavior. The defects of the resonator are eliminated by the placement of the membrane columns. The device in this state acts as does the one shown in FIG. 13A, with light [0109] 1328 propagating without interference.
  • A static version of this geometry is described in the paper H. A. Haus “Channel drop filters in photonic crystals”, Optics Express, vol. 3, no. 1, 1998. [0110]
  • Optical Switches
  • In FIG. 14A, a device based on the induced absorber includes a self-supporting [0111] aluminum membrane 1400, on the order of tens to hundreds of microns square, which is suspended over a stack of materials 1402 comprising a combination of metals and oxides and patterned on transparent substrate. The films utilized in the induced absorber modulator, described in U.S. patent application Ser. No. 08/688,710, filed on Jul. 31, 1996, and incorporated by reference, could serve this purpose. The films on the substrate may also comprise a transparent conductor, such as ITO. The structure may incorporate on its underside a lossy metal film such as molybdenum or tungsten, of several hundred angstroms in thickness.
  • The materials are configured so that in the undriven state the device reflects in a particular wavelength region, but becomes very absorbing when the membrane is driven into contact. [0112] Side view 1410 shows a view of the device looking into the side of the substrate. Light beam 1408 propagates at some arbitrary angle through the substrate and is incident on IMod 1406, shown in the un-driven state. Assuming the frequency of the light corresponds with the reflective region of the IMod in the un-driven state, the light is reflected at a complementary angle and propagates away. Side view, 1414, shows the same IMod in the driven state. Because the device is now very absorbing, the light which is incident upon it is no longer reflected but absorbed by the materials in the IMod's stack.
  • Thus, in this configuration, the IMod may act as an optical switch for light that is propagating within the substrate upon which it is fabricated. The substrate is machined to form surfaces that are highly polished, highly parallel (to within {fraction (1/10)} of a wavelength of the light of interest), and many times thicker (at least hundreds of microns) than the wavelength of light. This allows the substrate to act as a substrate/waveguide in that light beams propagate in a direction which is, on average, parallel to the substrate but undergo multiple reflections from one surface to another. Light waves in such a structure are often referred to as substrate guided waves. [0113]
  • FIG. 14B shows a variation on this theme. [0114] Membrane 1420 is patterned such that it is no longer rectangular but is tapered towards one end. While the mechanical spring constant of the structure remains constant along this length, electrode area decreases. Thus the amount of force which can be applied electrostatically is lower at the narrower end of the taper. If a gradually increasing voltage is applied, the membrane will begin to actuate at the wider end first and actuation will progress along arrow 1428 as the voltage increases.
  • To incident light, the IMod operates as an absorbing region whose area depends on the value of the applied voltage. [0115] Side view 1434 shows the effect on a substrate propagating beam when no voltage is applied. The corresponding reflective area 1429, which shows the IMod from the perspective of the incident beam, shows “footprint” 1431 of the beam superimposed on the reflective area. Since the entire area 1429 is non-absorbing, beam, 1430, is reflected from IMod 1428 (with minimal losses) in the form of beam 1432.
  • In [0116] side view 1436, an interim voltage value is applied and the reflected beam 1440 has been attenuated to some extent because the reflective area, shown in 1437 is now partially absorbing. Views 1438 and 1429 reveal the result of full actuation and the complete attenuation of the beam.
  • Thus, by using a tapered geometry a variable optical attenuator may be created, the response of which is directly related to the value of the applied voltage. [0117]
  • Another kind of optical switch is illustrated in FIG. 15A. [0118] Support frame 1500 is fabricated from a metal, such as aluminum several thousand angstroms in thickness, in such a way that it is electrically connected to mirror 1502. Mirror 1502 resides on transparent optical standoff 1501, which is bonded to support 1500. Mirror 1502 may comprise a single metal film or combinations of metals, oxides, and semiconducting films.
  • The standoff is fabricated from a material that has the same or higher index of refraction than that of the substrate. This could be SiO2 (same index) or a polymer whose index can be varied. The standoff is machined so that the mirror is supported at an angle of 45 degrees. Machining of the standoff can be accomplished using a technique known as analog lithography that relies on a photomask whose features are continuously variable in terms of their optical density. By appropriate variation of this density on a particular feature, three-dimensional shapes can be formed in photoresist that is exposed using this mask. The shape can then be transferred into other materials via reactive ion etching. The entire assembly is suspended over conductor, [0119] 1503, which has been patterned to provide an unobstructed “window” 1505 into the underlying substrate, 1504. That is to say the bulk of conductor 1503 has been etched away so that window 1505, comprising bare glass, is exposed. The switch, like other IMods, can be actuated to drive the whole assembly into contact with the substrate/waveguide. Side view, 1512, shows the optical behavior. Beam 1510 is propagating within the substrate at an angle 45 degrees from normal that prevents it from propagating beyond the boundaries of the substrate. This is because 45 degrees is above the angle known as the critical angle, which allows the beam to be reflected with minimal or no losses at the interface 1519 between the substrate and the outside medium by the principle of total internal reflection (TIR).
  • The principle of TIR depends on Snell's law, but a basic requirement is that the medium outside the substrate have an index of refraction that is lower than that of the substrate. In side view, [0120] 1512, the device is shown with the switch 1506 in the un-driven state, and beam 1510 propagating in an unimpeded fashion. When switch 1506 is actuated into contact with the substrate as shown in side view 1514, the beam's path is altered. Because the standoff has a refractive index greater than or equal to that of the substrate, the beam no longer undergoes TIR at the interface. The beam propagates out of the substrate into the optical standoff, where it is reflected by the mirror. The mirror is angled, at 45 degrees, such that the reflected beam is now traveling at an angle which is normal to the plane of the substrate. The result is that the light may propagate through the substrate interface because it no longer meets the criteria for TIR, and can be captured by a fiber coupler 1520, which has been mounted on the opposite side of the substrate/waveguide. A similar concept is described in the paper, X. Zhou, et al, “Waveguide Panel Display Using Electromechanical Spatial Modulators”, SID Digest, vol. XXIX, 1998. This particular device was designed for emissive display applications. The mirror may also be implemented in the form of a reflecting grating, which may be etched into the surface of the standoff using conventional patterning techniques. This approach, however, exhibits wavelength dependence and losses due to multiple diffraction orders that are not an issue with thin film mirrors. Additionally, alternative optical structures may be substituted for the mirror as well with their respective attributes and shortcomings. These can be categorized as refractive, reflective, and diffractive and can include micro-lenses (both transmissive and reflective), concave or convex mirrors, diffractive optical elements, holographic optical elements, prisms, and any other form of optical element which can be created using micro-fabrication techniques. In the case where an alternative optical element is used, the standoff and the angle it imparts to the optic may not be necessary depending on the nature of the micro-optic.
  • This variation on the IMod acts as a de-coupling switch for light. Broadband radiation, or specific frequencies if the mirror is designed correctly, can be coupled out of the substrate/waveguide at will. [0121] Side view 1526 shows a more elaborate implementation in which an additional fixed mirror, angled at 45 degrees, has been fabricated on the side of the substrate opposite that of the de-coupling switch. This mirror differs from the switch in that it cannot be actuated. By careful selection of the angles of the mirrors on both structures, light 1522 that has been effectively decoupled out of the substrate by switch 1506 may be re-coupled back into the substrate by re-coupling mirror 1528. However, by fabricating the re-coupling mirror with different orientations in the XY plane, the mirror combination may be used to redirect light in any new direction within the substrate/waveguide. The combination of these two structures will be referred to as a directional switch. The coupling mirrors can also be used to couple any light that is propagating into the substrate in a direction normal to the surface.
  • FIG. 15B shows one implementation of an array of directional switches. Looking down onto the [0122] substrate 1535, linear array 1536 is an array of fiber couplers which directs light into the substrate at an angle normal to the XY plane. An array of re-coupling mirrors (not visible) is positioned directly opposite the fiber coupler array to couple light into the substrate parallel to beam 1530. On the surfaces of the substrate, 1535, are fabricated an array of directional switches of which 1531 is one. The switches are positioned in a way such that light coupled into the substrate from any one of the input fiber couplers 1536 may be directed to any one of the output fiber couplers 1532. In this way the device may act as an N×N optical switch that can switch any one of any number of different inputs to any one of any number of different outputs.
  • Tunable Filter
  • Returning to FIG. 16, an IMod in the form of a tunable Fabry-Perot filter is shown. In this case, conducting [0123] contact pad 1602 has been deposited and patterned along with dielectric mirrors 1604 and 1608 and sacrificial layer 1606. This may consist of a silicon film with a thickness of some multiple of one-half a wavelength. The mirrors may comprise stacks of materials, TiO2 (high index) and SiO2 (low index) being two examples, with alternating high and low in dices, and one of the layers may also be air. Insulating layer 1610 is deposited and patterned such that second contact pad 1612 only contacts mirror 1608. Mirror, 1608 is subsequently patterned leaving a mirror “island” 1614 connected by supports 1615. The lateral dimensions of the island are primarily determined by the size of light beam with which it will interact. This is usually on the order of tens to several hundred microns. Sacrificial layer 1606 is partially etched chemically, but leaving standoffs of sufficient size to provide mechanical stability, probably on the order of tens of microns square. If the top layer of mirror 1608 and the bottom layer of mirror 1604 are lightly doped to be conducting, then application of a voltage between contact pads 1602 and 1612 will cause the mirror island to be displaced. Thus, the structure's optical response may be tuned.
  • FIG. 17A shows an application of this tunable filter. On the top surface of [0124] substrate 1714 has been fabricated tunable filter 1704, mirrors 1716, and anti-reflection coating 1712. A mirror 1717 has also been fabricated on the bottom surface of the substrate, e.g., from a metal such as gold of at least 100 nm thick. Mounted on the top surface of the substrate is an optical superstructure, 1706, whose inner surface is at least 95% reflective, e.g., by the addition of a reflecting gold film, and which also supports an angled mirror, 1710. In this device, light beam 1702 propagates within the substrate at some angle that is larger than the critical angle, which is approximately 41 degrees for a substrate of glass and a medium of air. Therefore the mirrors 1716 are required to keep it bounded within the confines of the substrate/waveguide. This configuration allows greater flexibility in the selection of angles at which the light propagates.
  • [0125] Beam 1702 is incident upon Fabry-Perot 1704, which transmits a particular frequency of light 1708 while reflecting the rest 1709. The transmitted frequency is incident onto and reflected from the reflective superstructure 1706, and is reflected again by mirror 1716 onto angled mirror 1710. Mirror 1710 is tilted such that the light is directed towards antireflection coating 1712 at a normal angle with respect to the substrate, and passes through and into the external medium. The device as a whole thus acts as a wavelength selective filter.
  • The superstructure may be fabricated using a number of techniques. One would include the bulk micromachining of a slab of silicon to form a cavity of precise depth, e.g., on the order of the thickness of the substrate and at least several hundred microns. The angled mirror is fabricated after cavity etch, and the entire assembly is bonded to the substrate, glass for example, using any one of many silicon/glass bonding techniques. [0126]
  • FIG. 17B is a more elaborate version. In this example, a second [0127] tunable filter 1739 has been added to provide an additional frequency selection channel. That is to say that two separate frequencies may now be selected independently. Detectors 1738 have also been added to allow for a higher degree of integrated functionality.
  • FIG. 17C incorporates integrated circuits. [0128] Light beam 1750 has been coupled into substrate 1770 and is incident upon tunable filter 1752. This filter is different than those of FIGS. 17A and 17B in that it includes recoupling mirror 1756 that has been fabricated on the surface of the movable mirror of the filter. The angle of the mirror is such that the frequency selected by filter 1752 is now coupled directly back into the substrate at a normal angle in the form of light beam 1758. The remaining frequencies contained in light beam 1750 propagate until they encounter recoupling mirror 1760 which is angled so that it presents a surface which is perpendicular to propagating beam 1756. The beam thus retraces its path back out of the device where it may be used by other devices that are connected optically. Light beam 1758 is incident on IC 1764 that can detect and decode the information within this beam. This IC may be in the form of an FPGA or other silicon, silicon/germanium, or gallium aresenide device based integrated circuit that could benefit from being directly coupled to information carrying light. For example, a high bandwidth optical interconnect may be formed between ICs 1764 and 1762 by virtue of the bidirectional light path 1772. This is formed by a combination of mirrors 1766 and recoupling mirrors 1768. Light can be emmitted by either ICs if they incorporate components such as vertical cavity surface emitting lasers (VCSELS) or light emitting diodes LEDs. Light can be detected by any number of optically sensitive components, with the nature of the component depending on the semiconductor technology used to fabricate the IC. Light that is incident on the IC may also be modulated by IMods that have been fabricated on the surface of the IC that is exposed to the substrate propagating light.
  • Optical Mixer Using Substrate Waveguide
  • FIGS. 18A and 18B are an illustration of a two-channel optical mixer implemented using a TIR version of a substrate/waveguide. FIG. 18A shows a schematic of the device. Light containing multiple wavelengths has two particular wavelengths, [0129] 1801 and 1803, split off and directed towards two independent variable attentuators 1805. They are then output to several possible channels 1807 or into an optical stop 1813.
  • FIG. 18B reveals an implementation. The input light is directed into the device through [0130] fiber coupler 1800, through anti-reflection coating 1802, and coupled into the substrate using re-coupling mirror 1806. The recoupling mirror directs the light onto tunable filter 1808, splitting off frequency λ1 (beam 1815) and all non-selected frequencies are directed toward a second tunable filter 1809, which splits off frequency λ2 (beam 1817), with the remaining frequencies, beam 1819, propagating further downstream via TIR. Following the path of beam 1815, which was transmitted by tunable filter 1808, the light is redirected back into the substrate waveguide via mirror 1810, through an AR coating, and re-coupled back into the substrate. The re-coupling mirror 1811 directs beam 1815 towards attenuator 1812 where it continues along a parallel path with beam 1817 selected by the second tunable filter 1809. These two beams are positionally shifted by virtue of beam repositioner 1816.
  • This structure produces the same result as a recoupling mirror, except that the mirror is parallel to the surface of the substrate. Because the mirror is suspended a fixed distance beyond the substrate surface, the position of the point of incidence on the opposite substrate interface is shifted towards the right. This shift is directly determined by the height of the repositioner. The [0131] beam 1819, containing the unselected wavelengths, is also shifted by virtue of repositioner 1818. The result is that all three beams are equally separated when they are incident on an array of decoupling switches 1820 and 1824. These serve selectively to redirect the beams into one of two optical combiners, 1828 being one of them or into detector/absorber 1830. The optical combiners may be fabricated using a variety of techniques. A polymeric film patterned into the form of a pillar with its top formed into a lens using reactive ion etching is one approach. The absorber/detector, comprising a semiconductor device that has been bonded to the substrate, serves to allow the measurement of the output power of the mixer. Optical superstructures 1829 support external optical components and provide a hermetic package for the mixer.
  • The combination of planar IMods and a substrate waveguide provide a family of optical devices that are easily fabricated, configured, and coupled to the outside world because the devices reside on the waveguide and/or on the superstructure and are capable of operating on light which is propagating within the waveguide, and between the waveguide and the superstructure. Because all of the components are fabricated in a planar fashion, economies of scale can be achieved by bulk fabrication over large areas, and the different pieces maybe aligned and bonded easily and precisely. In addition, because all of the active components exhibit actuation in a direction normal to the substrate, they are relatively simple to fabricate and drive, compared to more elaborate non-planar mirrors and beams. Active electronic components may be bonded to either the superstructure or the substrate/waveguide to increase functionality. Alternatively, active devices may be fabricated as a part of the superstructure, particularly if it is a semiconductor such as silicon or gallium arsenide. [0132]
  • Printing Style Fabrication Processes
  • Because they are planar and because many of the layers do not require semiconducting electrical characteristics that require specialized substrates, IMods, as well as many other MEM structures, may take advantage of manufacturing techniques which are akin to those of the printing industry. These kinds of processes typically involve a “substrate” which is flexible and in the form of a continuous sheet of say paper or plastic. Referred to as web fed processes, they usually involve a continuous roll of the substrate material which is fed into a series of tools, each of which selectively coats the substrate with ink in order to sequentially build up a full color graphical image. Such processes are of interest due to the high speeds with which product can be produced. [0133]
  • FIG. 19 is a representation of such a sequence applied to the fabrication of a single IMod and, by extension, to the fabrication of arrays of IMods or other microelectromechanical structures. [0134] Web source 1900 is a roll of the substrate material such as transparent plastic. A representative area 1902 on a section of material from the roll contains, for the purposes of this description, only a single device. Embossing tool 1904 impresses a pattern of depressions into the plastic sheet. This can be accomplished by a metal master which has the appropriate pattern of protrusions etched on it.
  • The metal master is mounted on a drum that is pressed against the sheet with enough pressure to deform the plastic to form the depressions. [0135] View 1906 illustrates this. Coater 1908 deposits thin layers of material using well known thin film deposition processes, such as sputtering or evaporation. The result is a stack 1910 of four films comprising an oxide, a metal, an oxide, and a sacrificial film. These materials correspond to the induced absorber IMod design. A tool 1912 dispenses, cures, and exposes photoresist for patterning these layers. Once the pattern has been defined, the film etching occurs in tool 1914. Alternatively, patterning may be accomplished using a process known as laser ablation. In this case, a laser is scanned over the material in a manner that allows it to be synchronized with the moving substrate. The frequency and power of the laser is such that it can evaporate the materials of interest to feature sizes that are on the order of microns. The frequency of the laser is tuned so that it only interacts with the materials on the substrate and not the substrate itself. Because the evaporation occurs so quickly, the substrate is heated only minimally.
  • In this device example, all of the films are etched using the same pattern. This is seen in [0136] 1918 where the photoresist has been stripped away after the application of tool 1916. Tool 1920, is another deposition tool that deposits what will become the structural layer of the IMod. Aluminum is one candidate for this layer 1922. This material may also include organic materials which exhibit minimal residual stress and which may be deposited using a variety of PVD and PECVD techniques. This layer is subsequently patterned, etched, and stripped of photoresist using tools 1924, 1926, and 1928 respectively. Tool 1930 is used to etch away the sacrificial layer. If the layer is silicon, this can be accomplished using XeF2, a gas phase etchant used for such purposes. The result is the self-supporting membrane structure 1932 that forms the IMod.
  • Packaging of the resulting devices is accomplished by bonding [0137] flexible sheet 1933 to the top surface of the substrate sheet. This is also supplied by a continuous roll 1936 that has been coated with a hermetic film, such as a metal, using coating tool 1934. The two sheets are joined using bonding tool 1937, to produce the resulting packaged device 1940.
  • Stress Measurement
  • Residual stress is a factor in the design and fabrication of MEM structures. In IMods, and other structures in which structural members have been mechanically released during the fabrication process, the residual stress determines the resulting geometry of the member. [0138]
  • The IMod, as an interferometric device, is sensitive to variations in the resulting geometry of the movable membrane. The reflected, or in other design cases transmitted, color is a direct function of the airgap spacing of the cavity. Consequently, variations in this distance along the length of a cavity can result in unacceptable variations in color. On the other hand, this property is a useful tool in determining the residual stress of the structure itself, because the variations in the color can be used to determine the variations and degree of deformation in the membrane. Knowing the deformed state of any material allows for a determination of the residual stresses in the material. Computer modeling programs and algorithms can use two-dimensional data on the deformation state to determine this. Thus the IMod structure can provide a tool for making this assessment. [0139]
  • FIGS. 20A and 20B show examples of how an IMod may be used in this fashion. IMods, [0140] 2000, and 2002, are shown from the perspective of the side and the bottom (i.e. viewed through the substrate). They are of a double cantilever and single cantilever form respectively. In this case, the structural material has no residual stresses, and both membranes exhibit no deformation. As viewed through the substrate, the devices exhibit a uniform color that is determined by the thickness of the spacer layer upon which they were formed. IMods 2004 and 2006 are shown with a stress gradient that is more compressive on the top than it is on the bottom. The structural membranes exhibit a deformation as a result, and the bottom view reveals the nature of the color change that would result. For example if color region 2016 were green, then color region 2014 might be blue because it is closer to the substrate. Conversely, color region 2018 (shown on the double cantilever) might be red because it is farther away. IMods 2008 and 2010 are shown in a state where the stress gradient exhibits higher tensile stress on the top than on the bottom. The structural members are deformed appropriately, and the color regions change as a result. In this case, region 2020 is red, while region 2022 is blue.
  • In FIG. 20B, a system is shown which can be used to quickly and accurately assess the residual stress state of a deposited film. Wafer [0141] 2030 comprises an array of IMod structures consisting of both single and double cantilevered membranes with varying lengths and widths. The structural membranes are fabricated from a material whose mechanical and residual stress properties are well characterized. Many materials are possible, subject to the limitations of the requisite reflectivity that can be quite low given that the IMods in this case are not to be used for display purposes. Good candidates would include materials in crystalline form (silicon, aluminum, germanium) which are or can be made compatible from a fabrication standpoint, exhibit some degree of reflectivity, and whose mechanical properties can or have been characterized to a high degree of accuracy. These “test structures” are fabricated and released so that they are freestanding. If the materials are without stress, then the structures should exhibit no color variations. Should this not be the case, however, then the color states or color maps may be recorded by use of a high resolution imaging device 2034, which can obtain images of high magnification via optical system 2032.
  • The imaging device is connected to a [0142] computer system 2036, upon which resides hardware and capable of recording and processing the image data. The hardware could comprise readily available high speed processing boards to perform numerical calculations at high rates of speed. The software may consist of collection routines to collect color information and calculate surface deformations. The core routine would use the deformation data to determine the optimal combination of uniform stress and stress gradient across the thickness of the membrane, which is capable of producing the overall shape.
  • One mode of use could be to generate a collection of “virgin” test wafers with detailed records of their non-deposited stress states, to be put away for later use. When the need arises to determine the residual stress of a deposited film, a test wafer is selected and the film is deposited on top of it. The deposited film alters the geometry of the structures and consequently their color maps. Using software resident on the computer system, the color maps of the test wafer both before and after may be compared and an accurate assessment of the residual stress in the deposited film made. The test structures may also be designed to be actuated after deposition. Observation of their behavior during actuation with the newly deposited films can provide even more information about the residual stress states as well as the change in the film properties over many actuation cycles. [0143]
  • This technique may also be used to determine the stress of films as they are being deposited. With appropriate modification of the deposition system, an optical path may be created allowing the imaging system to view the structures and track the change of their color maps in real time. This would facilitate real-time feedback systems for controlling deposition parameters in an attempt to control residual stress in this manner. The software and hardware may “interrogate” the test wafer on a periodic basis and allow the deposition tool operator to alter conditions as the film grows. Overall this system is superior to other techniques for measuring residual stress, which either rely on electromechanical actuation alone, or utilize expensive and complex interferometric systems to measure the deformation of fabricated structures. The former suffers from a need to provide drive electronics to a large array of devices, and inaccuracies in measuring displacement electronically. The latter is subject to the optical properties of the films under observation, and the complexity of the required external optics and hardware. [0144]
  • Discontinuous Films
  • Another class of materials with interesting properties are films whose structure is not homogeneous. These films can occur in several forms and we shall refer to them collectively as discontinuous films. FIG. 21A illustrates one form of the discontinuous film. Substrate [0145] 2100 could be a metal, dielectric, or semiconductor, which has had contours 2104, 2106, and 2108 etched into its surface. The contours, comprising individual structural profiles which should have a height 2110 that is some fraction of the wavelength of light of interest, are etched using photolithographic and chemical etching techniques to achieve profiles which are similar to those illustrated by, 2104 (triangular), 2106, (cylindrical) and 2108 (klopfenstein taper). The effective diameter of the base 2102 of any of the individual profiles is also on the order of the height of the pattern. While each contour is slightly different, they all share in common the property that as one traverses from the incident into the substrate, the effective index of refraction goes gradually from that of the incident medium, to that of the film substrate 2100 itself. Structures of this type act as superior antireflection coatings, compared to those made from combinations of thin films, because they do not suffer as much from angular dependencies. Thus, they remain highly antireflective from a broader range of incident angles.
  • FIG. 21B reveals a [0146] coating 2120 that has been deposited on substrate 2122 and could also be of a metal, dielectric, or semiconductor. The film, in this case, is still in the early stages of formation, somewhere below 1000 angstroms in thickness. During most deposition processes, films undergo a gradual nucleation process, forming material localities that grow larger and larger until they begin to join together and, at some point, form a continuous film. 2124 shows a top view of this film. The optical properties of films in the early stage differ from that of the continuous film. For metals, the film tends to exhibit higher losses than its continuous equivalent.
  • FIG. 21C illustrates a third form of discontinuous film. In this case, [0147] film 2130 has been deposited on substrate 2132 to a thickness, at least a thousand angstroms, such that it is considered continuous. A pattern of “subwavelength” (i.e. a diameter smaller than the wavelength of interest) holes 2134 is produced in the material using techniques which are similar to the self-assembly approach described earlier. In this case, the polymer can act as a mask for transferring the etch pattern into the underlying material, and the holes etched using reactive ion etch techniques. Because the material is continuous, but perforated, it does not act like the early stage film of FIG. 21B. Instead, its optical properties differ from the unetched film in that incident radiation experiences lower losses and may exhibit transmission peaks based on surface plasmons. Additionally, the geometry of the holes as well as the angle of incidence and refractive index of the incident medium may be manipulated to control the spectral characteristics of the light that is transmitted. 2136 shows a top view of this film. Films such as these are described in the paper “Control of optical transmission through metals perforated with subwavelength hole arrays” by Tae Jin Kim. While they are regular in structure, they differ from PBGs.
  • All three of these types of discontinuous films are candidates for inclusion into an IMod structure. That is to say they could act as one or more of the material films in the static and/or movable portions of an IMod structure. All three exhibit unique optical properties which can be manipulated in ways that rely primarily on the structure and geometry of the individual film instead of a combination of films with varying thickness. They can be used in conjunction with other electronic, optical, and mechanical elements of an IMod that they could comprise. In very simple cases, the optical properties of each of these films may be changed by bringing them into direct contact or close proximity to other films via surface conduction or optical interference. This can occur by directly altering the conductivity of the film, and/or by altering the effective refractive index of its surrounding medium. Thus more complex optical responses in an individual IMod may be obtained with simpler structures that have less complex fabrication processes. [0148]
  • Other embodiments are within the scope of the following claims: [0149]

Claims (51)

1. A reflective display comprising an anti-reflection coating on a viewed surface of the display, the anti-reflection coating being configured to increase the contrast ratio of the display.
2. The display of claim 1 comprising interferometric modulators.
3. An arc-lamp structure comprising a monolithic fabrication on a planar substrate, the fabrication comprising deposited thin films and/or a material of the substrate, the fabrication including thin film electrodes between which an arc is to be formed.
4. A transmissive or reflective display device incorporating the arc-lamp structure of claim 3.
5. A line-at-a-time electronic driving method comprising
applying a bias voltage to rows (or columns) of a device,
applying data voltages to the columns (or rows) alternately about a value of the bias voltage,
actuation of the device occurring when the difference between the values of the data voltage and the select voltage is above a first predetermined level,
release of the device occurring when the difference between the values of the data voltage and the select voltage is below a second predetermined level lowest, and
the device maintaining its state when the select voltage is at the bias level.
6. The method of claim 5 in which the device comprises multiple MEMS devices.
7. Apparatus comprising
a reflective display comprising pixel elements each configured to contribute a controlled amount of white and saturated color, and
a controller that controls the pixels to provide a full-color display.
8. The apparatus of claim 7 in which the display comprises interferometric modulators.
9. An electronic product comprising
a core non-general-purpose processor that is reconfigurable to perform any selected one or more of multiple software applications or functions, and
a control element that enables a user to reconfigure the processor to use any of the software applications or functions.
10. The electronic product of claim 9 further comprising peripherals, the peripherals being used or reconfigured or made accessible for interaction based on a configuration of the core processor.
11. An interferometric modulator comprising
a cavity that provides for actuation of the modulator, and
a separate cavity that provides an interference effect.
12. An interferometric modulator comprising a structure associated with actuation of the modulator, and
an interferometric cavity having walls,
the structure being obscured by at least one of the walls of the interferometric cavity.
13. An interferometric modulator comprising
a thin film stack, and
a structure associated with actuation of the modulator, the structure being deposited directly upon the thin film stack, interference of the structure and the stack causing the stack to reflect minimal amounts of light.
14. An interferometric modulator comprising
a movable wall that
is configured as a spiral by induced residual stresses, in one mode of operation, and
is un-rolled to form a plate which acts interferometrically on light in another mode of operation.
15. A monolithic MEM modulator comprising
a movable plate that is held on a supporting substrate and
is configured to selectively obstruct a path of light,
is movable rotationally, about a hinge, in a plane normal to a surface of the supporting substrate, and
is actuated by electrostatic forces applied between it and electrodes at the surface of the substrate.
16. The modulator of claim 15 wherein colors or dark states are imparted by the interferometric properties of thin film stacks deposited on the modulator structure.
17. A micromechanical switch comprising
a supporting substrate, and
a movable component that effects switching by motion in a plane parallel to a plane of the substrate.
18. The switch of claim 17 wherein the movable component provides electrical contact between a source and a drain.
19. The switch of claim 17 wherein the movable component includes an insulating element.
20. A voltage switching or logic component that includes the switch of claim 17.
21. An electronic or MEMS-based device that incorporates the voltage switching or logic component of claim 20.
22. A dynamic micromechanical structure comprising a structure having an index of refraction that varies in a periodic fashion along more than one of at least two orthogonal axis.
23. A device for processing light comprising the micromechanical structure of claim 22.
24. The device of claim 23 configured to select and/or redirect specific frequencies of light from a waveguide that is propagating multiple light frequencies.
25. The device of claim 24 wherein a movable portion of the structure is configured to introduce a defect into a periodic photonic structure.
26. The device of claim 24 wherein the movable portion of the structure is configured to move a multi-dimensional photonic structure to change overall optical properties of the device.
27. A process for fabricating multi-dimensional photonic structures in conjunction with microelectromechanical structures, the process comprising
holographic patterning or polymeric self-assembly processes or self-organizing particle suspensions.
28. A process for introducing defects into multidimensional photonic structures, the process comprising
using a beam of atomic or sub-atomic particles to modify part of the photonic structure, by the addition or removal of material, by alteration of optical properties of a material or, by using micro-electrodeposition to add material.
29. A process for introducing defects into a multidimensional photonic structure, the process forming features on surface of a substrate, the features configured to provide locations for development of defects in a later formed photonic structure.
30. A device comprising
a substrate,
an interferometric modulator fabricated on the substrate, the interferometric modulator configured to modulate light propagating within the substrate upon which it is fabricated, in a direction that is generally parallel to the surface of the substrate.
31. A device comprising a substrate and a metallic MEM structure formed on the substrate, the MEM structure being configured to modulate light that is propagating as guided waves.
32. The modulator of claims 30 and 31 configured to function as a variable attenuator.
33. A dynamic micromechanical structure comprising a substrate, and a reflecting optic on the substrate, the reflecting optic when actuated, re-directing light which is incident upon it and is propagating within the substrate, towards another optical structure.
34. A static microfabricated structure comprising a substrate and a mirror fabricated on or in close proximity to the substrate, the mirror being configured to redirect light that is incident upon it and is propagating within the substrate.
35. An optical switch comprising
a dynamic micromechanical structure comprising a reflecting optic and a fixed microstructure incorporating a reflecting optic,
the two structures being fabricated on opposite sides of a substrate/waveguide,
the reflecting optics being oriented such that when a beam of light propagating within the substrate/waveguide is incident upon the dynamic structure in an actuated state, the optical path of the combined reflecting optics allows the path of the light's propagation within the substrate/waveguide to be altered arbitrarily.
36. The device of claim 34 wherein the reflecting optic comprises a mirror.
37. The device of claim 33 configured to couple light into or out of the substrate.
38. An optical device comprising
micromechanical structures configured to process light is propagating within a substrate/waveguide, and an optical or electronic device configured to thereafter intercept or manipulate the light.
39. An optical device of claim 37 further comprising anti-reflection coatings configured to couple and decouple light into and out of the substrate/waveguide.
40. The optical device of claim 38 further comprising an optical superstructure that is capable of supporting a combination of static microfabricated components, dynamic micromechanical components, and electronic components, and that is attached to the substrate/waveguide.
41. An optical path repositioning device comprising a patterned block of dielectric material deposited upon the surface of a substrate/waveguide.
42. The device of claim 37 wherein the micromechanical structures comprise a tunable filter.
43. An N×N optical switch comprising the devices of claims 33, 34, or 37.
44. A wavelength selective switch comprising the devices of claims 33, 34, or 37.
45. An optical mixer comprising the devices of claims 33, 34, and 37.
46. A process for fabricating micromechanical structures comprising
feeding a continuous web of a plastic supporting substrate through a series of tools for depositing, patterning, and etching deposited films.
47. A method of measuring a residual stress of deposited materials that comprise an interferometric cavity which is deformed by the deposition of the materials to be measured, the method comprising determining the deformation of the microstructure by measuring a pattern of wavelengths of light reflected by the cavity.
48. The method of claim 44 further comprising automatically determining the stress of the deposited materials based upon the patterns of reflected light.
49. The method of claim 45 further comprising determining the residual stress of films during and after deposition.
50. A dynamic micromechanical structure comprising a a dielectric, metallic, or semiconducting film which is discontinuous, the optical properties of said film differing from those of a continuous film because of the discontinuity.
51. A dynamic micromechanical structure comprising a a dielectric, metallic, or semiconducting film which has been etched in such a way as to produce a continuous variation in the optical properties of the film through its depth.
US10/224,029 1999-10-05 2002-08-19 Photonic MEMS and structures Expired - Lifetime US7110158B2 (en)

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US11/255,347 Expired - Fee Related US7236284B2 (en) 1995-05-01 2005-10-21 Photonic MEMS and structures
US11/390,996 Expired - Fee Related US7483197B2 (en) 1994-05-05 2006-03-28 Photonic MEMS and structures
US11/445,926 Expired - Fee Related US7187489B2 (en) 1994-05-05 2006-06-01 Photonic MEMS and structures
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US12/099,057 Abandoned US20080191978A1 (en) 1994-05-05 2008-04-07 Apparatus for driving micromechanical devices
US12/336,357 Expired - Fee Related US7839559B2 (en) 1999-10-05 2008-12-16 Controller and driver features for bi-stable display
US12/360,005 Expired - Fee Related US8416487B2 (en) 1999-10-05 2009-01-26 Photonic MEMS and structures
US12/912,122 Expired - Fee Related US8264763B2 (en) 1999-10-05 2010-10-26 Controller and driver features for bi-stable display
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US11/390,996 Expired - Fee Related US7483197B2 (en) 1994-05-05 2006-03-28 Photonic MEMS and structures
US11/445,926 Expired - Fee Related US7187489B2 (en) 1994-05-05 2006-06-01 Photonic MEMS and structures
US11/492,533 Expired - Fee Related US7830586B2 (en) 1999-10-05 2006-07-24 Transparent thin films
US11/564,800 Expired - Fee Related US7355782B2 (en) 1999-10-05 2006-11-29 Systems and methods of controlling micro-electromechanical devices
US12/099,057 Abandoned US20080191978A1 (en) 1994-05-05 2008-04-07 Apparatus for driving micromechanical devices
US12/336,357 Expired - Fee Related US7839559B2 (en) 1999-10-05 2008-12-16 Controller and driver features for bi-stable display
US12/360,005 Expired - Fee Related US8416487B2 (en) 1999-10-05 2009-01-26 Photonic MEMS and structures
US12/912,122 Expired - Fee Related US8264763B2 (en) 1999-10-05 2010-10-26 Controller and driver features for bi-stable display
US13/430,108 Expired - Fee Related US8643935B2 (en) 1999-10-05 2012-03-26 Photonic MEMS and structures

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Cited By (278)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020075555A1 (en) * 1994-05-05 2002-06-20 Iridigm Display Corporation Interferometric modulation of radiation
US20030218603A1 (en) * 2002-04-25 2003-11-27 Fuji Photo Film Co., Ltd. Image display unit and method of manufacturing the same
US20040058532A1 (en) * 2002-09-20 2004-03-25 Miles Mark W. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US20040209192A1 (en) * 2003-04-21 2004-10-21 Prime View International Co., Ltd. Method for fabricating an interference display unit
US20040240032A1 (en) * 1994-05-05 2004-12-02 Miles Mark W. Interferometric modulation of radiation
US20040263944A1 (en) * 2003-06-24 2004-12-30 Miles Mark W. Thin film precursor stack for MEMS manufacturing
US20050035699A1 (en) * 2003-08-15 2005-02-17 Hsiung-Kuang Tsai Optical interference display panel
US20050036095A1 (en) * 2003-08-15 2005-02-17 Jia-Jiun Yeh Color-changeable pixels of an optical interference display panel
US20050046948A1 (en) * 2003-08-26 2005-03-03 Wen-Jian Lin Interference display cell and fabrication method thereof
US20050046922A1 (en) * 2003-09-03 2005-03-03 Wen-Jian Lin Interferometric modulation pixels and manufacturing method thereof
US20050105849A1 (en) * 2003-11-13 2005-05-19 Kim Chang K. Thermally actuated wavelength tunable optical filter
US20050142684A1 (en) * 2002-02-12 2005-06-30 Miles Mark W. Method for fabricating a structure for a microelectromechanical system (MEMS) device
US20050163365A1 (en) * 1999-07-22 2005-07-28 Barbour Blair A. Apparatus and method of information extraction from electromagnetic energy based upon multi-characteristic spatial geometry processing
US20050168431A1 (en) * 2004-02-03 2005-08-04 Clarence Chui Driver voltage adjuster
US20050195468A1 (en) * 2004-03-05 2005-09-08 Sampsell Jeffrey B. Integrated modulator illumination
US20050195467A1 (en) * 2004-03-03 2005-09-08 Manish Kothari Altering temporal response of microelectromechanical elements
US20050231791A1 (en) * 2003-12-09 2005-10-20 Sampsell Jeffrey B Area array modulation and lead reduction in interferometric modulators
US20050249966A1 (en) * 2004-05-04 2005-11-10 Ming-Hau Tung Method of manufacture for microelectromechanical devices
US20050250235A1 (en) * 2002-09-20 2005-11-10 Miles Mark W Controlling electromechanical behavior of structures within a microelectromechanical systems device
US20050247477A1 (en) * 2004-05-04 2005-11-10 Manish Kothari Modifying the electro-mechanical behavior of devices
US20050254115A1 (en) * 2004-05-12 2005-11-17 Iridigm Display Corporation Packaging for an interferometric modulator
US20050286114A1 (en) * 1996-12-19 2005-12-29 Miles Mark W Interferometric modulation of radiation
US20050286113A1 (en) * 1995-05-01 2005-12-29 Miles Mark W Photonic MEMS and structures
US20060001942A1 (en) * 2004-07-02 2006-01-05 Clarence Chui Interferometric modulators with thin film transistors
US20060007517A1 (en) * 2004-07-09 2006-01-12 Prime View International Co., Ltd. Structure of a micro electro mechanical system
US20060017689A1 (en) * 2003-04-30 2006-01-26 Faase Kenneth J Light modulator with concentric control-electrode structure
US20060024880A1 (en) * 2004-07-29 2006-02-02 Clarence Chui System and method for micro-electromechanical operation of an interferometric modulator
US20060044298A1 (en) * 2004-08-27 2006-03-02 Marc Mignard System and method of sensing actuation and release voltages of an interferometric modulator
US20060044928A1 (en) * 2004-08-27 2006-03-02 Clarence Chui Drive method for MEMS devices
US20060044246A1 (en) * 2004-08-27 2006-03-02 Marc Mignard Staggered column drive circuit systems and methods
US20060056000A1 (en) * 2004-08-27 2006-03-16 Marc Mignard Current mode display driver circuit realization feature
US20060057754A1 (en) * 2004-08-27 2006-03-16 Cummings William J Systems and methods of actuating MEMS display elements
EP1640944A2 (en) * 2004-09-27 2006-03-29 Idc, Llc Method and apparatus using sub-pixels with different intensity levels to increase the colour scale resolution of a display
EP1640774A1 (en) * 2004-09-27 2006-03-29 Idc, Llc Method and system for packaging a mems device
US20060066937A1 (en) * 2004-09-27 2006-03-30 Idc, Llc Mems switch with set and latch electrodes
US20060065436A1 (en) * 2004-09-27 2006-03-30 Brian Gally System and method for protecting microelectromechanical systems array using back-plate with non-flat portion
US20060066598A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and device for electrically programmable display
US20060066541A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Method and device for manipulating color in a display
US20060066601A1 (en) * 2004-09-27 2006-03-30 Manish Kothari System and method for providing a variable refresh rate of an interferometric modulator display
US20060066503A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Controller and driver features for bi-stable display
US20060066543A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Ornamental display device
US20060067643A1 (en) * 2004-09-27 2006-03-30 Clarence Chui System and method for multi-level brightness in interferometric modulation
US20060067641A1 (en) * 2004-09-27 2006-03-30 Lauren Palmateer Method and device for packaging a substrate
US20060066560A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Systems and methods of actuating MEMS display elements
US20060066932A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of selective etching using etch stop layer
US20060066596A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B System and method of transmitting video data
US20060066871A1 (en) * 2004-09-27 2006-03-30 William Cummings Process control monitors for interferometric modulators
US20060067651A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Photonic MEMS and structures
US20060067646A1 (en) * 2004-09-27 2006-03-30 Clarence Chui MEMS device fabricated on a pre-patterned substrate
US20060066863A1 (en) * 2004-09-27 2006-03-30 Cummings William J Electro-optical measurement of hysteresis in interferometric modulators
US20060067650A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of making a reflective display device using thin film transistor production techniques
US20060066595A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Method and system for driving a bi-stable display
US20060067649A1 (en) * 2004-09-27 2006-03-30 Ming-Hau Tung Apparatus and method for reducing slippage between structures in an interferometric modulator
US20060066876A1 (en) * 2004-09-27 2006-03-30 Manish Kothari Method and system for sensing light using interferometric elements
US20060067653A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Method and system for driving interferometric modulators
US20060066594A1 (en) * 2004-09-27 2006-03-30 Karen Tyger Systems and methods for driving a bi-stable display element
US20060066559A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method and system for writing data to MEMS display elements
US20060067633A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Device and method for wavelength filtering
US20060067642A1 (en) * 2004-09-27 2006-03-30 Karen Tyger Method and device for providing electronic circuitry on a backplate
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
US20060065366A1 (en) * 2004-09-27 2006-03-30 Cummings William J Portable etch chamber
US20060066856A1 (en) * 2004-09-27 2006-03-30 William Cummings Systems and methods for measuring color and contrast in specular reflective devices
US20060067644A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of fabricating interferometric devices using lift-off processing techniques
US20060066542A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Interferometric modulators having charge persistence
US20060066597A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Method and system for reducing power consumption in a display
US20060066936A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Interferometric optical modulator using filler material and method
US20060066600A1 (en) * 2004-09-27 2006-03-30 Lauren Palmateer System and method for display device with reinforcing substance
US20060066557A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and device for reflective display with time sequential color illumination
US20060066599A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Reflective display pixels arranged in non-rectangular arrays
US20060067652A1 (en) * 2004-09-27 2006-03-30 Cummings William J Methods for visually inspecting interferometric modulators for defects
US20060066561A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method and system for writing data to MEMS display elements
US20060066504A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B System with server based control of client device display features
US20060065043A1 (en) * 2004-09-27 2006-03-30 William Cummings Method and system for detecting leak in electronic devices
WO2006036427A2 (en) * 2004-09-27 2006-04-06 Idc, Llc Method and device for selective adjustment of hysteresis window
WO2006036392A1 (en) * 2004-09-27 2006-04-06 Idc, Llc Analog interferometric modulator device
US20060077510A1 (en) * 2004-09-27 2006-04-13 Clarence Chui System and method of illuminating interferometric modulators using backlighting
US20060077521A1 (en) * 2004-09-27 2006-04-13 Gally Brian J System and method of implementation of interferometric modulators for display mirrors
US20060077503A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer System and method of providing MEMS device with anti-stiction coating
US20060077617A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Selectable capacitance circuit
US20060077507A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Conductive bus structure for interferometric modulator array
US20060077147A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer System and method for protecting micro-structure of display array using spacers in gap within display device
US20060077156A1 (en) * 2004-09-27 2006-04-13 Clarence Chui MEMS device having deformable membrane characterized by mechanical persistence
US20060077393A1 (en) * 2004-09-27 2006-04-13 Gally Brian J System and method for implementation of interferometric modulator displays
US20060077125A1 (en) * 2004-09-27 2006-04-13 Idc, Llc. A Delaware Limited Liability Company Method and device for generating white in an interferometric modulator display
US20060077149A1 (en) * 2004-09-27 2006-04-13 Gally Brian J Method and device for manipulating color in a display
US20060079098A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Method and system for sealing a substrate
US20060077152A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Device and method for manipulation of thermal response in a modulator
US20060077502A1 (en) * 2004-09-27 2006-04-13 Ming-Hau Tung Methods of fabricating interferometric modulators by selectively removing a material
US20060077154A1 (en) * 2004-09-27 2006-04-13 Gally Brian J Optical films for directing light towards active areas of displays
US20060077126A1 (en) * 2004-09-27 2006-04-13 Manish Kothari Apparatus and method for arranging devices into an interconnected array
US20060076637A1 (en) * 2004-09-27 2006-04-13 Gally Brian J Method and system for packaging a display
US20060077515A1 (en) * 2004-09-27 2006-04-13 Cummings William J Method and device for corner interferometric modulation
US20060077145A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Device having patterned spacers for backplates and method of making the same
US20060077505A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Device and method for display memory using manipulation of mechanical response
US20060077150A1 (en) * 2004-09-27 2006-04-13 Sampsell Jeffrey B System and method of providing a regenerating protective coating in a MEMS device
US20060079048A1 (en) * 2004-09-27 2006-04-13 Sampsell Jeffrey B Method of making prestructure for MEMS systems
US20060077518A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Mirror and mirror layer for optical modulator and method
US20060077504A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Method and device for protecting interferometric modulators from electrostatic discharge
US20060077155A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Reflective display device having viewable display on both sides
US20060077153A1 (en) * 2004-09-27 2006-04-13 Idc, Llc, A Delaware Limited Liability Company Reduced capacitance display element
US20060077527A1 (en) * 2004-09-27 2006-04-13 Cummings William J Methods and devices for inhibiting tilting of a mirror in an interferometric modulator
US20060077508A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method and device for multistate interferometric light modulation
US20060077529A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method of fabricating a free-standing microstructure
US20060077516A1 (en) * 2004-09-27 2006-04-13 Manish Kothari Device having a conductive light absorbing mask and method for fabricating same
US20060077151A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method and device for a display having transparent components integrated therein
US20060103613A1 (en) * 2004-09-27 2006-05-18 Clarence Chui Interferometric modulator array with integrated MEMS electrical switches
US20060103643A1 (en) * 2004-09-27 2006-05-18 Mithran Mathew Measuring and modeling power consumption in displays
US20060109260A1 (en) * 2004-11-19 2006-05-25 Au Optronics Corp. Handwriting input apparatus
US20060132383A1 (en) * 2004-09-27 2006-06-22 Idc, Llc System and method for illuminating interferometric modulator display
US20060146396A1 (en) * 2004-12-30 2006-07-06 Au Optronics Corp. Optical microelectromechanical device
US20060177950A1 (en) * 2005-02-04 2006-08-10 Wen-Jian Lin Method of manufacturing optical interferance color display
US20060187191A1 (en) * 2005-02-23 2006-08-24 Pixtronix, Incorporated Display methods and apparatus
US20060187528A1 (en) * 2005-02-23 2006-08-24 Pixtronix, Incorporated Methods and apparatus for spatial light modulation
US20060187531A1 (en) * 2005-02-23 2006-08-24 Pixtronix, Incorporated Methods and apparatus for bi-stable actuation of displays
US20060187190A1 (en) * 2005-02-23 2006-08-24 Pixtronix, Incorporated Display methods and apparatus
US20060209012A1 (en) * 2005-02-23 2006-09-21 Pixtronix, Incorporated Devices having MEMS displays
US20060250335A1 (en) * 2005-05-05 2006-11-09 Stewart Richard A System and method of driving a MEMS display device
US20060250350A1 (en) * 2005-05-05 2006-11-09 Manish Kothari Systems and methods of actuating MEMS display elements
US20060250676A1 (en) * 2005-02-23 2006-11-09 Pixtronix, Incorporated Light concentrating reflective display methods and apparatus
US20060256039A1 (en) * 2005-02-23 2006-11-16 Pixtronix, Incorporated Display methods and apparatus
US20060262380A1 (en) * 1998-04-08 2006-11-23 Idc, Llc A Delaware Limited Liability Company MEMS devices with stiction bumps
US20060277486A1 (en) * 2005-06-02 2006-12-07 Skinner David N File or user interface element marking system
US20060274074A1 (en) * 1994-05-05 2006-12-07 Miles Mark W Display device having a movable structure for modulating light and method thereof
US20070002156A1 (en) * 2005-02-23 2007-01-04 Pixtronix, Incorporated Display apparatus and methods for manufacture thereof
US20070008601A1 (en) * 2005-07-09 2007-01-11 Samsung Electronics Co., Ltd. Optical scanner package
US7164524B2 (en) 2004-12-30 2007-01-16 Au Optronics Corp. Optical microelectromechanical device and fabrication method thereof
US20070035805A1 (en) * 2003-12-09 2007-02-15 Clarence Chui System and method for addressing a MEMS display
US20070053652A1 (en) * 2005-09-02 2007-03-08 Marc Mignard Method and system for driving MEMS display elements
US20070058095A1 (en) * 1994-05-05 2007-03-15 Miles Mark W System and method for charge control in a MEMS device
US20070064295A1 (en) * 2005-09-21 2007-03-22 Kenneth Faase Light modulator with tunable optical state
US20070147688A1 (en) * 2005-12-22 2007-06-28 Mithran Mathew System and method for power reduction when decompressing video streams for interferometric modulator displays
US20070170540A1 (en) * 2006-01-18 2007-07-26 Chung Won Suk Silicon-rich silicon nitrides as etch stops in MEMS manufature
US20070177129A1 (en) * 2006-01-06 2007-08-02 Manish Kothari System and method for providing residual stress test structures
US20070182707A1 (en) * 2006-02-09 2007-08-09 Manish Kothari Method and system for writing data to MEMS display elements
US20070189654A1 (en) * 2006-01-13 2007-08-16 Lasiter Jon B Interconnect structure for MEMS device
US20070196040A1 (en) * 2006-02-17 2007-08-23 Chun-Ming Wang Method and apparatus for providing back-lighting in an interferometric modulator display device
US20070194414A1 (en) * 2006-02-21 2007-08-23 Chen-Jean Chou Method for providing and removing discharging interconnect for chip-on-glass output leads and structures thereof
US20070194630A1 (en) * 2006-02-23 2007-08-23 Marc Mignard MEMS device having a layer movable at asymmetric rates
US20070196944A1 (en) * 2006-02-22 2007-08-23 Chen-Jean Chou Electrical conditioning of MEMS device and insulating layer thereof
US20070206267A1 (en) * 2006-03-02 2007-09-06 Ming-Hau Tung Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US20070211257A1 (en) * 2006-03-09 2007-09-13 Kearl Daniel A Fabry-Perot Interferometer Composite and Method
US20070242341A1 (en) * 2006-04-13 2007-10-18 Qualcomm Incorporated Mems devices and processes for packaging such devices
US20070242008A1 (en) * 2006-04-17 2007-10-18 William Cummings Mode indicator for interferometric modulator displays
US20070247419A1 (en) * 2006-04-24 2007-10-25 Sampsell Jeffrey B Power consumption optimized display update
US20070247704A1 (en) * 2006-04-21 2007-10-25 Marc Mignard Method and apparatus for providing brightness control in an interferometric modulator (IMOD) display
US20070249081A1 (en) * 2006-04-19 2007-10-25 Qi Luo Non-planar surface structures and process for microelectromechanical systems
US20070258123A1 (en) * 2006-05-03 2007-11-08 Gang Xu Electrode and interconnect materials for MEMS devices
US20070279727A1 (en) * 2006-06-05 2007-12-06 Pixtronix, Inc. Display apparatus with optical cavities
US20070279729A1 (en) * 2006-06-01 2007-12-06 Manish Kothari Analog interferometric modulator device with electrostatic actuation and release
US20080002210A1 (en) * 2006-06-30 2008-01-03 Kostadin Djordjev Determination of interferometric modulator mirror curvature and airgap variation using digital photographs
US20080003737A1 (en) * 2006-06-30 2008-01-03 Ming-Hau Tung Method of manufacturing MEMS devices providing air gap control
US20080003710A1 (en) * 2006-06-28 2008-01-03 Lior Kogut Support structure for free-standing MEMS device and methods for forming the same
US20080013145A1 (en) * 2004-09-27 2008-01-17 Idc, Llc Microelectromechanical device with optical function separated from mechanical and electrical function
US20080013144A1 (en) * 2004-09-27 2008-01-17 Idc, Llc Microelectromechanical device with optical function separated from mechanical and electrical function
US20080032439A1 (en) * 2006-08-02 2008-02-07 Xiaoming Yan Selective etching of MEMS using gaseous halides and reactive co-etchants
US20080030825A1 (en) * 2006-04-19 2008-02-07 Qualcomm Incorporated Microelectromechanical device and method utilizing a porous surface
US20080037104A1 (en) * 2005-02-23 2008-02-14 Pixtronix, Inc. Alignment methods in fluid-filled MEMS displays
US20080043315A1 (en) * 2006-08-15 2008-02-21 Cummings William J High profile contacts for microelectromechanical systems
US7349141B2 (en) 2004-09-27 2008-03-25 Idc, Llc Method and post structures for interferometric modulation
US20080094690A1 (en) * 2006-10-18 2008-04-24 Qi Luo Spatial Light Modulator
US20080100900A1 (en) * 2006-10-27 2008-05-01 Clarence Chui Light guide including optical scattering elements and a method of manufacture
US20080111834A1 (en) * 2006-11-09 2008-05-15 Mignard Marc M Two primary color display
US20080115596A1 (en) * 2004-09-27 2008-05-22 Idc, Llc System and method of testing humidity in a sealed mems device
USRE40436E1 (en) * 2001-08-01 2008-07-15 Idc, Llc Hermetic seal and method to create the same
US20080180956A1 (en) * 2007-01-30 2008-07-31 Qualcomm Mems Technologies, Inc. Systems and methods of providing a light guiding layer
US20080186581A1 (en) * 2007-02-01 2008-08-07 Qualcomm Incorporated Modulating the intensity of light from an interferometric reflector
US20080239455A1 (en) * 2007-03-28 2008-10-02 Lior Kogut Microelectromechanical device and method utilizing conducting layers separated by stops
US20080267572A1 (en) * 2007-04-30 2008-10-30 Qualcomm Mems Technologies, Inc. Dual film light guide for illuminating displays
US20080278788A1 (en) * 2007-05-09 2008-11-13 Qualcomm Incorporated Microelectromechanical system having a dielectric movable membrane and a mirror
US20080278787A1 (en) * 2007-05-09 2008-11-13 Qualcomm Incorporated Microelectromechanical system having a dielectric movable membrane and a mirror
US20080288225A1 (en) * 2007-05-18 2008-11-20 Kostadin Djordjev Interferometric modulator displays with reduced color sensitivity
US7460292B2 (en) 2005-06-03 2008-12-02 Qualcomm Mems Technologies, Inc. Interferometric modulator with internal polarization and drive method
US20080316566A1 (en) * 2007-06-19 2008-12-25 Qualcomm Incorporated High aperture-ratio top-reflective am-imod displays
US20080316568A1 (en) * 2007-06-21 2008-12-25 Qualcomm Incorporated Infrared and dual mode displays
US20090009845A1 (en) * 2007-07-02 2009-01-08 Qualcomm Incorporated Microelectromechanical device with optical function separated from mechanical and electrical function
EP2030947A2 (en) * 2007-08-29 2009-03-04 Qualcomm Mems Technologies, Inc. Interferometric optical modulator with broadband reflection characteristics
US20090073534A1 (en) * 2007-09-14 2009-03-19 Donovan Lee Interferometric modulator display devices
US20090073539A1 (en) * 2007-09-14 2009-03-19 Qualcomm Incorporated Periodic dimple array
US20090078316A1 (en) * 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
US20090101192A1 (en) * 2007-10-19 2009-04-23 Qualcomm Incorporated Photovoltaic devices with integrated color interferometric film stacks
US20090103166A1 (en) * 2007-10-23 2009-04-23 Qualcomm Mems Technologies, Inc. Adjustably transmissive mems-based devices
US20090103164A1 (en) * 2007-10-19 2009-04-23 Pixtronix, Inc. Spacers for maintaining display apparatus alignment
US7532385B2 (en) 2003-08-18 2009-05-12 Qualcomm Mems Technologies, Inc. Optical interference display panel and manufacturing method thereof
US20090126777A1 (en) * 2007-11-16 2009-05-21 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display
US20090147343A1 (en) * 2007-12-07 2009-06-11 Lior Kogut Mems devices requiring no mechanical support
US20090147535A1 (en) * 2007-12-07 2009-06-11 Qualcomm Incorporated Light illumination of displays with front light guide and coupling elements
US20090151771A1 (en) * 2007-12-17 2009-06-18 Qualcomm Mems Technologies, Inc. Photovoltaics with interferometric ribbon masks
US20090159123A1 (en) * 2007-12-21 2009-06-25 Qualcomm Mems Technologies, Inc. Multijunction photovoltaic cells
US20090195481A1 (en) * 2008-01-31 2009-08-06 Epson Imaging Devices Corporation Display device
US20090207159A1 (en) * 2008-02-11 2009-08-20 Qualcomm Mems Technologies, Inc. Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same
US20090225395A1 (en) * 2008-03-07 2009-09-10 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US20090251761A1 (en) * 2008-04-02 2009-10-08 Kasra Khazeni Microelectromechanical systems display element with photovoltaic structure
US20090255569A1 (en) * 2008-04-11 2009-10-15 Qualcomm Mems Technologies, Inc. Method to improve pv aesthetics and efficiency
US20090257245A1 (en) * 2008-04-18 2009-10-15 Pixtronix, Inc. Light guides and backlight systems incorporating prismatic structures and light redirectors
US20090257105A1 (en) * 2008-04-10 2009-10-15 Qualcomm Mems Technologies, Inc. Device having thin black mask and method of fabricating the same
US20090267953A1 (en) * 2004-09-27 2009-10-29 Idc, Llc Controller and driver features for bi-stable display
US7612933B2 (en) 2008-03-27 2009-11-03 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US20090293955A1 (en) * 2007-11-07 2009-12-03 Qualcomm Incorporated Photovoltaics with interferometric masks
US20090323165A1 (en) * 2008-06-25 2009-12-31 Qualcomm Mems Technologies, Inc. Method for packaging a display device and the device obtained thereof
US20090323170A1 (en) * 2008-06-30 2009-12-31 Qualcomm Mems Technologies, Inc. Groove on cover plate or substrate
US20090323153A1 (en) * 2008-06-25 2009-12-31 Qualcomm Mems Technologies, Inc. Backlight displays
US20100027100A1 (en) * 2008-08-04 2010-02-04 Pixtronix, Inc. Display with controlled formation of bubbles
US20100046058A1 (en) * 2005-10-28 2010-02-25 Qualcomm Mems Technologies, Inc. Diffusion barrier layer for mems devices
US20100053148A1 (en) * 2008-09-02 2010-03-04 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
US7675665B2 (en) 2005-02-23 2010-03-09 Pixtronix, Incorporated Methods and apparatus for actuating displays
US7702192B2 (en) 2006-06-21 2010-04-20 Qualcomm Mems Technologies, Inc. Systems and methods for driving MEMS display
US20100096011A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. High efficiency interferometric color filters for photovoltaic modules
US7706044B2 (en) 2003-05-26 2010-04-27 Qualcomm Mems Technologies, Inc. Optical interference display cell and method of making the same
US7710632B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. Display device having an array of spatial light modulators with integrated color filters
US7710645B2 (en) 2007-06-29 2010-05-04 Bose Corporation Selective reflecting for laser projector
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US20100110518A1 (en) * 2008-10-27 2010-05-06 Pixtronix, Inc. Mems anchors
US7724993B2 (en) 2004-09-27 2010-05-25 Qualcomm Mems Technologies, Inc. MEMS switches with deforming membranes
US20100128337A1 (en) * 2008-07-11 2010-05-27 Yeh-Jiun Tung Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control
US20100149624A1 (en) * 2004-09-27 2010-06-17 Qualcomm Mems Technologies, Inc. Method and device for compensating for color shift as a function of angle of view
US7746529B2 (en) 2005-02-23 2010-06-29 Pixtronix, Inc. MEMS display apparatus
US20100182308A1 (en) * 2006-10-06 2010-07-22 Holman Robert L Light bar including turning microstructures and contoured back reflector
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
EP2210857A1 (en) * 2005-11-16 2010-07-28 QUALCOMM MEMS Technologies, Inc. MEMS switch with set and latch electrodes
US7768690B2 (en) 2008-06-25 2010-08-03 Qualcomm Mems Technologies, Inc. Backlight displays
US7777715B2 (en) 2006-06-29 2010-08-17 Qualcomm Mems Technologies, Inc. Passive circuits for de-multiplexing display inputs
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US20100238572A1 (en) * 2009-03-23 2010-09-23 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
WO2010110827A1 (en) * 2009-01-27 2010-09-30 Arizona Board Of Regents, For And On Behalf Of Arizona State University Displays with embedded mems sensors and related methods
US7807488B2 (en) 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. Display element having filter material diffused in a substrate of the display element
US7808695B2 (en) 2006-06-15 2010-10-05 Qualcomm Mems Technologies, Inc. Method and apparatus for low range bit depth enhancement for MEMS display architectures
US7813026B2 (en) 2004-09-27 2010-10-12 Qualcomm Mems Technologies, Inc. System and method of reducing color shift in a display
US20100284055A1 (en) * 2007-10-19 2010-11-11 Qualcomm Mems Technologies, Inc. Display with integrated photovoltaic device
US7835061B2 (en) 2006-06-28 2010-11-16 Qualcomm Mems Technologies, Inc. Support structures for free-standing electromechanical devices
US7839356B2 (en) 2005-02-23 2010-11-23 Pixtronix, Incorporated Display methods and apparatus
US7845841B2 (en) 2006-08-28 2010-12-07 Qualcomm Mems Technologies, Inc. Angle sweeping holographic illuminator
US7855826B2 (en) 2008-08-12 2010-12-21 Qualcomm Mems Technologies, Inc. Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices
US20110026095A1 (en) * 2007-07-31 2011-02-03 Qualcomm Mems Technologies, Inc. Devices and methods for enhancing color shift of interferometric modulators
US7884989B2 (en) 2005-05-27 2011-02-08 Qualcomm Mems Technologies, Inc. White interferometric modulators and methods for forming the same
US20110063712A1 (en) * 2009-09-17 2011-03-17 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
US7916103B2 (en) 2004-09-27 2011-03-29 Qualcomm Mems Technologies, Inc. System and method for display device with end-of-life phenomena
US20110075241A1 (en) * 2009-09-28 2011-03-31 Qualcomm Mems Technologies, Inc. Interferometric display with interferometric reflector
US20110096508A1 (en) * 2009-10-23 2011-04-28 Qualcomm Mems Technologies, Inc. Light-based sealing and device packaging
US20110157679A1 (en) * 2008-08-04 2011-06-30 Pixtronix, Inc. Methods for manufacturing cold seal fluid-filled display apparatus
US20110164067A1 (en) * 2010-01-05 2011-07-07 Pixtronix, Inc. Circuits for controlling display apparatus
US20110205756A1 (en) * 2010-02-19 2011-08-25 Pixtronix, Inc. Light guides and backlight systems incorporating prismatic structures and light redirectors
US8045252B2 (en) 2004-02-03 2011-10-25 Qualcomm Mems Technologies, Inc. Spatial light modulator with integrated optical compensation structure
CN1755477B (en) * 2004-09-27 2011-11-16 高通Mems科技公司 Interferometric modulator array display device with integrated MEMS electrical switches, and method therefor
US8081368B2 (en) 2007-03-29 2011-12-20 Bose Corporation Selective absorbing
CN101151207B (en) * 2005-02-23 2012-01-04 皮克斯特罗尼克斯公司 Display device and method of image formation
US8164821B2 (en) 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
US8174469B2 (en) 2005-05-05 2012-05-08 Qualcomm Mems Technologies, Inc. Dynamic driver IC and display panel configuration
US8262274B2 (en) 2006-10-20 2012-09-11 Pitronix, Inc. Light guides and backlight systems incorporating light redirectors at varying densities
US8310442B2 (en) 2005-02-23 2012-11-13 Pixtronix, Inc. Circuits for controlling display apparatus
US20130162656A1 (en) * 2011-12-22 2013-06-27 Robert L. Holman Angled facets for display devices
US8482496B2 (en) 2006-01-06 2013-07-09 Pixtronix, Inc. Circuits for controlling MEMS display apparatus on a transparent substrate
US8519945B2 (en) 2006-01-06 2013-08-27 Pixtronix, Inc. Circuits for controlling display apparatus
US8526096B2 (en) 2006-02-23 2013-09-03 Pixtronix, Inc. Mechanical light modulators with stressed beams
TWI416474B (en) * 2004-08-27 2013-11-21 Qualcomm Mems Technologies Inc Staggered column drive circuit and methods, display and device for display
US8592877B2 (en) 2009-01-27 2013-11-26 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Embedded MEMS sensors and related methods
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US20140132756A1 (en) * 2012-11-13 2014-05-15 Qualcomm Mems Technologies, Inc. Real-time compensation for blue shift of electromechanical systems display devices
US8736939B2 (en) 2011-11-04 2014-05-27 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device
US8735225B2 (en) 2004-09-27 2014-05-27 Qualcomm Mems Technologies, Inc. Method and system for packaging MEMS devices with glass seal
US8797632B2 (en) 2010-08-17 2014-08-05 Qualcomm Mems Technologies, Inc. Actuation and calibration of charge neutral electrode of a display device
US8817357B2 (en) 2010-04-09 2014-08-26 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of forming the same
US8885244B2 (en) 2004-09-27 2014-11-11 Qualcomm Mems Technologies, Inc. Display device
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9057872B2 (en) 2010-08-31 2015-06-16 Qualcomm Mems Technologies, Inc. Dielectric enhanced mirror for IMOD display
US9087486B2 (en) 2005-02-23 2015-07-21 Pixtronix, Inc. Circuits for controlling display apparatus
US20150212251A1 (en) * 2014-01-29 2015-07-30 E Ink Holdings Inc. Light-emitting module
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9176318B2 (en) 2007-05-18 2015-11-03 Pixtronix, Inc. Methods for manufacturing fluid-filled MEMS displays
US9261694B2 (en) 2005-02-23 2016-02-16 Pixtronix, Inc. Display apparatus and methods for manufacture thereof
WO2017062075A1 (en) * 2015-10-08 2017-04-13 Teramount Ltd. A fiber to chip optical coupler
US10564374B2 (en) 2015-10-08 2020-02-18 Teramount Ltd. Electro-optical interconnect platform
US10585287B2 (en) * 2016-12-20 2020-03-10 Facebook Technologies, Llc Waveguide display with a small form factor, a large field of view, and a large eyebox
US10823895B2 (en) 2014-01-29 2020-11-03 E Ink Holdings Inc. Light-emitting module
US10908408B2 (en) * 2018-01-03 2021-02-02 Boe Technology Group Co., Ltd. Pixel structure, method for manufacturing pixel structure array substrate, and display device
US11054566B2 (en) * 2019-10-25 2021-07-06 Facebook Technologies, Llc Display waveguide with a high-index layer
US11394468B2 (en) * 2019-03-22 2022-07-19 Source Photonics Inc. System and method for transferring optical signals in photonic devices and method of making the system
US11585991B2 (en) 2019-02-28 2023-02-21 Teramount Ltd. Fiberless co-packaged optics
US11852876B2 (en) 2015-10-08 2023-12-26 Teramount Ltd. Optical coupling

Families Citing this family (201)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7297471B1 (en) 2003-04-15 2007-11-20 Idc, Llc Method for manufacturing an array of interferometric modulators
US7619810B2 (en) * 1994-05-05 2009-11-17 Idc, Llc Systems and methods of testing micro-electromechanical devices
US20010003487A1 (en) 1996-11-05 2001-06-14 Mark W. Miles Visible spectrum modulator arrays
US7907319B2 (en) 1995-11-06 2011-03-15 Qualcomm Mems Technologies, Inc. Method and device for modulating light with optical compensation
US8928967B2 (en) 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US7532377B2 (en) * 1998-04-08 2009-05-12 Idc, Llc Movable micro-electromechanical device
JP4052498B2 (en) 1999-10-29 2008-02-27 株式会社リコー Coordinate input apparatus and method
JP2001184161A (en) 1999-12-27 2001-07-06 Ricoh Co Ltd Method and device for inputting information, writing input device, method for managing written data, method for controlling display, portable electronic writing device, and recording medium
US6803906B1 (en) 2000-07-05 2004-10-12 Smart Technologies, Inc. Passive touch system and method of detecting user input
US6574033B1 (en) 2002-02-27 2003-06-03 Iridigm Display Corporation Microelectromechanical systems device and method for fabricating same
US6954197B2 (en) * 2002-11-15 2005-10-11 Smart Technologies Inc. Size/scale and orientation determination of a pointer in a camera-based touch system
TWI289708B (en) 2002-12-25 2007-11-11 Qualcomm Mems Technologies Inc Optical interference type color display
US8508508B2 (en) 2003-02-14 2013-08-13 Next Holdings Limited Touch screen signal processing with single-point calibration
US8456447B2 (en) 2003-02-14 2013-06-04 Next Holdings Limited Touch screen signal processing
US7629967B2 (en) 2003-02-14 2009-12-08 Next Holdings Limited Touch screen signal processing
US20040162017A1 (en) * 2003-02-18 2004-08-19 Israel Pe'er Chamber ventilation device
US7532206B2 (en) * 2003-03-11 2009-05-12 Smart Technologies Ulc System and method for differentiating between pointers used to contact touch surface
CN1325964C (en) * 2003-09-09 2007-07-11 高通Mems科技公司 Optical interference type display unit structure and manufacturing method
CN100349034C (en) * 2003-09-09 2007-11-14 高通Mems科技公司 Interference regulating display assembly and method for manufacturing same
US7274356B2 (en) 2003-10-09 2007-09-25 Smart Technologies Inc. Apparatus for determining the location of a pointer within a region of interest
US7012726B1 (en) * 2003-11-03 2006-03-14 Idc, Llc MEMS devices with unreleased thin film components
US7355593B2 (en) * 2004-01-02 2008-04-08 Smart Technologies, Inc. Pointer tracking across multiple overlapping coordinate input sub-regions defining a generally contiguous input region
JP3924758B2 (en) * 2004-01-23 2007-06-06 下山 勲 Coloring structure and display device
JP2007522520A (en) * 2004-02-12 2007-08-09 パノラマ ラブズ ピーティーワイ リミテッド Apparatus, method and computer program product for a structured waveguide including a recursive zone
US7232986B2 (en) * 2004-02-17 2007-06-19 Smart Technologies Inc. Apparatus for detecting a pointer within a region of interest
US7855824B2 (en) 2004-03-06 2010-12-21 Qualcomm Mems Technologies, Inc. Method and system for color optimization in a display
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
US7460110B2 (en) * 2004-04-29 2008-12-02 Smart Technologies Ulc Dual mode touch system
US7492357B2 (en) * 2004-05-05 2009-02-17 Smart Technologies Ulc Apparatus and method for detecting a pointer relative to a touch surface
US7538759B2 (en) 2004-05-07 2009-05-26 Next Holdings Limited Touch panel display system with illumination and detection provided from a single edge
US8120596B2 (en) * 2004-05-21 2012-02-21 Smart Technologies Ulc Tiled touch system
CN101010714B (en) * 2004-08-27 2010-08-18 高通Mems科技公司 Systems and methods of actuating MEMS display elements
US7750886B2 (en) 2004-09-27 2010-07-06 Qualcomm Mems Technologies, Inc. Methods and devices for lighting displays
US7508571B2 (en) 2004-09-27 2009-03-24 Idc, Llc Optical films for controlling angular characteristics of displays
US8514169B2 (en) 2004-09-27 2013-08-20 Qualcomm Mems Technologies, Inc. Apparatus and system for writing data to electromechanical display elements
US8102407B2 (en) * 2004-09-27 2012-01-24 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7369296B2 (en) 2004-09-27 2008-05-06 Idc, Llc Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator
US8031133B2 (en) * 2004-09-27 2011-10-04 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7710636B2 (en) * 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. Systems and methods using interferometric optical modulators and diffusers
CN100439967C (en) * 2004-09-27 2008-12-03 Idc公司 Method and device for multistate interferometric light modulation
US20060077148A1 (en) * 2004-09-27 2006-04-13 Gally Brian J Method and device for manipulating color in a display
US20060176241A1 (en) * 2004-09-27 2006-08-10 Sampsell Jeffrey B System and method of transmitting video data
US7928928B2 (en) 2004-09-27 2011-04-19 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing perceived color shift
IL169799A0 (en) * 2004-09-27 2007-07-04 Idc Llc Controller and driver features for bi-stable display
US7453579B2 (en) * 2004-09-27 2008-11-18 Idc, Llc Measurement of the dynamic characteristics of interferometric modulators
SG155994A1 (en) * 2004-09-27 2009-10-29 Idc Llc Method and device for manipulating color in a display
CA2795356A1 (en) * 2005-02-23 2006-08-31 Pixtronix, Inc. Methods and apparatus for actuating displays
US20070205969A1 (en) * 2005-02-23 2007-09-06 Pixtronix, Incorporated Direct-view MEMS display devices and methods for generating images thereon
CA2599579C (en) * 2005-02-23 2013-11-26 Pixtronix, Inc. A display utilizing a control matrix to control movement of mems-based light modulators
US7999994B2 (en) 2005-02-23 2011-08-16 Pixtronix, Inc. Display apparatus and methods for manufacture thereof
US7619805B2 (en) 2005-03-29 2009-11-17 Hewlett-Packard Development Company, L.P. Light modulator device
US7295363B2 (en) * 2005-04-08 2007-11-13 Texas Instruments Incorporated Optical coating on light transmissive substrates of micromirror devices
JP4501899B2 (en) * 2005-07-06 2010-07-14 エプソンイメージングデバイス株式会社 Liquid crystal display device and electronic device
EP2495212A3 (en) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
CN101228091A (en) 2005-07-22 2008-07-23 高通股份有限公司 Support structure for MEMS device and methods thereof
US20070115415A1 (en) * 2005-11-21 2007-05-24 Arthur Piehl Light absorbers and methods
US20070126673A1 (en) * 2005-12-07 2007-06-07 Kostadin Djordjev Method and system for writing data to MEMS display elements
US20070165007A1 (en) * 2006-01-13 2007-07-19 Gerald Morrison Interactive input system
US7652814B2 (en) 2006-01-27 2010-01-26 Qualcomm Mems Technologies, Inc. MEMS device with integrated optical element
US20070205994A1 (en) * 2006-03-02 2007-09-06 Taco Van Ieperen Touch system and method for interacting with the same
US7643203B2 (en) 2006-04-10 2010-01-05 Qualcomm Mems Technologies, Inc. Interferometric optical display system with broadband characteristics
US20070268201A1 (en) * 2006-05-22 2007-11-22 Sampsell Jeffrey B Back-to-back displays
US7321457B2 (en) 2006-06-01 2008-01-22 Qualcomm Incorporated Process and structure for fabrication of MEMS device having isolated edge posts
US7766498B2 (en) 2006-06-21 2010-08-03 Qualcomm Mems Technologies, Inc. Linear solid state illuminator
EP2029473A2 (en) 2006-06-21 2009-03-04 Qualcomm Incorporated Method for packaging an optical mems device
JP4327183B2 (en) * 2006-07-31 2009-09-09 株式会社日立製作所 High pressure fuel pump control device for internal combustion engine
US9019183B2 (en) 2006-10-06 2015-04-28 Qualcomm Mems Technologies, Inc. Optical loss structure integrated in an illumination apparatus
WO2008045311A2 (en) 2006-10-06 2008-04-17 Qualcomm Mems Technologies, Inc. Illumination device with built-in light coupler
US7855827B2 (en) 2006-10-06 2010-12-21 Qualcomm Mems Technologies, Inc. Internal optical isolation structure for integrated front or back lighting
US8107155B2 (en) 2006-10-06 2012-01-31 Qualcomm Mems Technologies, Inc. System and method for reducing visual artifacts in displays
US8872085B2 (en) 2006-10-06 2014-10-28 Qualcomm Mems Technologies, Inc. Display device having front illuminator with turning features
EP1946162A2 (en) 2006-10-10 2008-07-23 Qualcomm Mems Technologies, Inc Display device with diffractive optics
US7684106B2 (en) * 2006-11-02 2010-03-23 Qualcomm Mems Technologies, Inc. Compatible MEMS switch architecture
US9442607B2 (en) * 2006-12-04 2016-09-13 Smart Technologies Inc. Interactive input system and method
US7724417B2 (en) 2006-12-19 2010-05-25 Qualcomm Mems Technologies, Inc. MEMS switches with deforming membranes
US7706042B2 (en) 2006-12-20 2010-04-27 Qualcomm Mems Technologies, Inc. MEMS device and interconnects for same
US7545556B2 (en) * 2006-12-21 2009-06-09 Qualcomm Mems Technologies, Inc. Method and apparatus for measuring the force of stiction of a membrane in a MEMS device
US7556981B2 (en) 2006-12-29 2009-07-07 Qualcomm Mems Technologies, Inc. Switches for shorting during MEMS etch release
JP5040326B2 (en) 2007-01-19 2012-10-03 日立電線株式会社 Filter assembly and optical module using the same
US7957589B2 (en) 2007-01-25 2011-06-07 Qualcomm Mems Technologies, Inc. Arbitrary power function using logarithm lookup table
US7403180B1 (en) 2007-01-29 2008-07-22 Qualcomm Mems Technologies, Inc. Hybrid color synthesis for multistate reflective modulator displays
US8126141B2 (en) * 2007-02-21 2012-02-28 Hewlett-Packard Development Company, L.P. Interferometric communication
US7916378B2 (en) 2007-03-08 2011-03-29 Qualcomm Mems Technologies, Inc. Method and apparatus for providing a light absorbing mask in an interferometric modulator display
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
WO2008128096A2 (en) 2007-04-11 2008-10-23 Next Holdings, Inc. Touch screen system with hover and click input methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
US7738158B2 (en) * 2007-06-29 2010-06-15 Qualcomm Mems Technologies, Inc. Electromechanical device treatment with water vapor
US8068268B2 (en) 2007-07-03 2011-11-29 Qualcomm Mems Technologies, Inc. MEMS devices having improved uniformity and methods for making them
US8094137B2 (en) * 2007-07-23 2012-01-10 Smart Technologies Ulc System and method of detecting contact on a display
US8022896B2 (en) * 2007-08-08 2011-09-20 Qualcomm Mems Technologies, Inc. ESD protection for MEMS display panels
US8432377B2 (en) 2007-08-30 2013-04-30 Next Holdings Limited Optical touchscreen with improved illumination
US8384693B2 (en) 2007-08-30 2013-02-26 Next Holdings Limited Low profile touch panel systems
CN101802678B (en) * 2007-09-17 2014-03-12 高通Mems科技公司 Semi-transparent/ transflective lighted interferometric devices
KR101415566B1 (en) * 2007-10-29 2014-07-04 삼성디스플레이 주식회사 Display device
US8223285B2 (en) 2007-11-09 2012-07-17 Seiko Epson Corporation Active matrix device, method for manufacturing switching element, electro-optical display device, and electronic apparatus
US8068710B2 (en) 2007-12-07 2011-11-29 Qualcomm Mems Technologies, Inc. Decoupled holographic film and diffuser
US20090168459A1 (en) * 2007-12-27 2009-07-02 Qualcomm Incorporated Light guide including conjugate film
US8405636B2 (en) 2008-01-07 2013-03-26 Next Holdings Limited Optical position sensing system and optical position sensor assembly
US7863079B2 (en) 2008-02-05 2011-01-04 Qualcomm Mems Technologies, Inc. Methods of reducing CD loss in a microelectromechanical device
WO2009102581A1 (en) * 2008-02-11 2009-08-20 Qualcomm Mems Technologies, Inc. Impedance sensing to determine pixel state in a passively addressed display array
US20090201282A1 (en) * 2008-02-11 2009-08-13 Qualcomm Mems Technologies, Inc Methods of tuning interferometric modulator displays
WO2009102733A2 (en) 2008-02-12 2009-08-20 Qualcomm Mems Technologies, Inc. Integrated front light diffuser for reflective displays
US8654061B2 (en) * 2008-02-12 2014-02-18 Qualcomm Mems Technologies, Inc. Integrated front light solution
WO2009102731A2 (en) 2008-02-12 2009-08-20 Qualcomm Mems Technologies, Inc. Devices and methods for enhancing brightness of displays using angle conversion layers
US7948672B2 (en) * 2008-03-07 2011-05-24 Qualcomm Mems Technologies, Inc. System and methods for tiling display panels
US7643305B2 (en) * 2008-03-07 2010-01-05 Qualcomm Mems Technologies, Inc. System and method of preventing damage to metal traces of flexible printed circuits
US7852491B2 (en) 2008-03-31 2010-12-14 Qualcomm Mems Technologies, Inc. Human-readable, bi-state environmental sensors based on micro-mechanical membranes
US8077326B1 (en) 2008-03-31 2011-12-13 Qualcomm Mems Technologies, Inc. Human-readable, bi-state environmental sensors based on micro-mechanical membranes
US7787130B2 (en) * 2008-03-31 2010-08-31 Qualcomm Mems Technologies, Inc. Human-readable, bi-state environmental sensors based on micro-mechanical membranes
US8049951B2 (en) 2008-04-15 2011-11-01 Qualcomm Mems Technologies, Inc. Light with bi-directional propagation
US20090278794A1 (en) * 2008-05-09 2009-11-12 Smart Technologies Ulc Interactive Input System With Controlled Lighting
US20090277697A1 (en) * 2008-05-09 2009-11-12 Smart Technologies Ulc Interactive Input System And Pen Tool Therefor
US8902193B2 (en) * 2008-05-09 2014-12-02 Smart Technologies Ulc Interactive input system and bezel therefor
US8118468B2 (en) * 2008-05-16 2012-02-21 Qualcomm Mems Technologies, Inc. Illumination apparatus and methods
KR20110028595A (en) 2008-05-28 2011-03-21 퀄컴 엠이엠스 테크놀로지스, 인크. Light guide panal with light turning microstructure, method of fabrication thereof, and display device
US7851239B2 (en) * 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7791783B2 (en) * 2008-06-25 2010-09-07 Qualcomm Mems Technologies, Inc. Backlight displays
US7782522B2 (en) * 2008-07-17 2010-08-24 Qualcomm Mems Technologies, Inc. Encapsulation methods for interferometric modulator and MEMS devices
CN102187263A (en) * 2008-08-22 2011-09-14 兰布士国际有限公司 A normally emitting pixel architecture for frustrated total internal reflection displays
EP2331920B1 (en) * 2008-09-16 2012-07-25 Nxp B.V. Integrated circuit with grating and manufacturing method therefor
US20100079385A1 (en) * 2008-09-29 2010-04-01 Smart Technologies Ulc Method for calibrating an interactive input system and interactive input system executing the calibration method
US8810522B2 (en) * 2008-09-29 2014-08-19 Smart Technologies Ulc Method for selecting and manipulating a graphical object in an interactive input system, and interactive input system executing the method
US20100083109A1 (en) * 2008-09-29 2010-04-01 Smart Technologies Ulc Method for handling interactions with multiple users of an interactive input system, and interactive input system executing the method
US20100079409A1 (en) * 2008-09-29 2010-04-01 Smart Technologies Ulc Touch panel for an interactive input system, and interactive input system incorporating the touch panel
WO2010044901A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. Monolithic imod color enhanced photovoltaic cell
US20110205259A1 (en) * 2008-10-28 2011-08-25 Pixtronix, Inc. System and method for selecting display modes
US8339378B2 (en) * 2008-11-05 2012-12-25 Smart Technologies Ulc Interactive input system with multi-angle reflector
US8445306B2 (en) 2008-12-24 2013-05-21 International Business Machines Corporation Hybrid MEMS RF switch and method of fabricating same
KR20110104090A (en) 2009-01-13 2011-09-21 퀄컴 엠이엠스 테크놀로지스, 인크. Large area light panel and screen
US20100195310A1 (en) * 2009-02-04 2010-08-05 Qualcomm Mems Technologies, Inc. Shaped frontlight reflector for use with display
US8172417B2 (en) 2009-03-06 2012-05-08 Qualcomm Mems Technologies, Inc. Shaped frontlight reflector for use with display
US20100229090A1 (en) * 2009-03-05 2010-09-09 Next Holdings Limited Systems and Methods for Interacting With Touch Displays Using Single-Touch and Multi-Touch Gestures
US20100238529A1 (en) * 2009-03-23 2010-09-23 Qualcomm Mems Technologies, Inc. Dithered holographic frontlight
US20100245370A1 (en) * 2009-03-25 2010-09-30 Qualcomm Mems Technologies, Inc. Em shielding for display devices
US8211728B2 (en) * 2009-03-27 2012-07-03 International Business Machines Corporation Horizontal micro-electro-mechanical-system switch
US8736590B2 (en) 2009-03-27 2014-05-27 Qualcomm Mems Technologies, Inc. Low voltage driver scheme for interferometric modulators
US7864403B2 (en) 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
US8405649B2 (en) * 2009-03-27 2013-03-26 Qualcomm Mems Technologies, Inc. Low voltage driver scheme for interferometric modulators
US8604898B2 (en) 2009-04-20 2013-12-10 International Business Machines Corporation Vertical integrated circuit switches, design structure and methods of fabricating same
US8576469B2 (en) * 2009-05-13 2013-11-05 Samsung Electronics Co., Ltd. Light screening apparatus including roll-up actuators
WO2010138765A1 (en) 2009-05-29 2010-12-02 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
WO2010141388A1 (en) * 2009-06-01 2010-12-09 Qualcomm Mems Technologies, Inc. Front light based optical touch screen
US8416206B2 (en) * 2009-07-08 2013-04-09 Smart Technologies Ulc Method for manipulating a graphic widget in a three-dimensional environment displayed on a touch panel of an interactive input system
US8692768B2 (en) 2009-07-10 2014-04-08 Smart Technologies Ulc Interactive input system
US8222104B2 (en) 2009-07-27 2012-07-17 International Business Machines Corporation Three dimensional integrated deep trench decoupling capacitors
US8569091B2 (en) 2009-08-27 2013-10-29 International Business Machines Corporation Integrated circuit switches, design structure and methods of fabricating the same
CA2772424A1 (en) * 2009-09-01 2011-03-10 Smart Technologies Ulc Interactive input system with improved signal-to-noise ratio (snr) and image capture method
TWI403757B (en) * 2009-09-25 2013-08-01 Asia Optical Co Inc Optical path control device
US7999995B2 (en) * 2009-09-28 2011-08-16 Sharp Laboratories Of America, Inc. Full color range interferometric modulation
US20110095977A1 (en) * 2009-10-23 2011-04-28 Smart Technologies Ulc Interactive input system incorporating multi-angle reflecting structure
US8711361B2 (en) * 2009-11-05 2014-04-29 Qualcomm, Incorporated Methods and devices for detecting and measuring environmental conditions in high performance device packages
JP5310529B2 (en) * 2009-12-22 2013-10-09 株式会社豊田中央研究所 Oscillator for plate member
US8884940B2 (en) 2010-01-06 2014-11-11 Qualcomm Mems Technologies, Inc. Charge pump for producing display driver output
US8502789B2 (en) * 2010-01-11 2013-08-06 Smart Technologies Ulc Method for handling user input in an interactive input system, and interactive input system executing the method
US8659611B2 (en) 2010-03-17 2014-02-25 Qualcomm Mems Technologies, Inc. System and method for frame buffer storage and retrieval in alternating orientations
BR112012026329A2 (en) 2010-04-16 2019-09-24 Flex Lighting Ii Llc signal comprising a film-based light guide
BR112012026325A2 (en) 2010-04-16 2019-09-24 Flex Lighting Ii Llc lighting device comprising a film-based light guide
US8848294B2 (en) 2010-05-20 2014-09-30 Qualcomm Mems Technologies, Inc. Method and structure capable of changing color saturation
US8402647B2 (en) 2010-08-25 2013-03-26 Qualcomm Mems Technologies Inc. Methods of manufacturing illumination systems
US8670171B2 (en) 2010-10-18 2014-03-11 Qualcomm Mems Technologies, Inc. Display having an embedded microlens array
US8902484B2 (en) 2010-12-15 2014-12-02 Qualcomm Mems Technologies, Inc. Holographic brightness enhancement film
US8294184B2 (en) 2011-02-23 2012-10-23 Qualcomm Mems Technologies, Inc. EMS tunable transistor
US8345030B2 (en) 2011-03-18 2013-01-01 Qualcomm Mems Technologies, Inc. System and method for providing positive and negative voltages from a single inductor
JP5786424B2 (en) * 2011-04-11 2015-09-30 セイコーエプソン株式会社 Wavelength variable interference filter, optical module, and electronic device
US9038455B2 (en) * 2011-06-21 2015-05-26 Delaware Capital Formation, Inc. System and method for product level monitoring in a chemical dispensing system
DE102011107360A1 (en) * 2011-06-29 2013-01-03 Karlsruher Institut für Technologie Micro-optical element, micro-optical array and optical sensor system
US9140900B2 (en) 2011-07-20 2015-09-22 Pixtronix, Inc. Displays having self-aligned apertures and methods of making the same
US8988409B2 (en) 2011-07-22 2015-03-24 Qualcomm Mems Technologies, Inc. Methods and devices for voltage reduction for active matrix displays using variability of pixel device capacitance
US9176530B2 (en) 2011-08-17 2015-11-03 Apple Inc. Bi-stable spring with flexible display
EP2745096B1 (en) 2011-08-17 2016-10-12 Public Service Solutions Inc Passive detectors for imaging systems
US20130049844A1 (en) * 2011-08-23 2013-02-28 Qualcomm Mems Technologies, Inc. Capacitive touch sensor having light shielding structures
US20130050165A1 (en) * 2011-08-24 2013-02-28 Qualcomm Mems Technologies, Inc. Device and method for light source correction for reflective displays
US20130106875A1 (en) * 2011-11-02 2013-05-02 Qualcomm Mems Technologies, Inc. Method of improving thin-film encapsulation for an electromechanical systems assembly
US9181086B1 (en) 2012-10-01 2015-11-10 The Research Foundation For The State University Of New York Hinged MEMS diaphragm and method of manufacture therof
US9183812B2 (en) 2013-01-29 2015-11-10 Pixtronix, Inc. Ambient light aware display apparatus
US20140225912A1 (en) * 2013-02-11 2014-08-14 Qualcomm Mems Technologies, Inc. Reduced metamerism spectral color processing for multi-primary display devices
JP2016516211A (en) 2013-02-18 2016-06-02 オルボテック リミテッド Two-step direct writing laser metallization
EP2984504B1 (en) 2013-03-12 2021-04-07 Mirion Technologies, Inc. Radiation detector and method
US9024925B2 (en) * 2013-03-13 2015-05-05 Qualcomm Mems Technologies, Inc. Color performance of IMODs
US9134552B2 (en) 2013-03-13 2015-09-15 Pixtronix, Inc. Display apparatus with narrow gap electrostatic actuators
US20140338722A1 (en) * 2013-05-14 2014-11-20 First Solar, Inc. Photovoltaic modules with a controlled color on their window surface and arrays thereof
US9272426B2 (en) * 2013-06-26 2016-03-01 The Uniteed States of America as represented by the Secretary of the Army Optically-actuated mechanical devices
US10705404B2 (en) 2013-07-08 2020-07-07 Concord (Hk) International Education Limited TIR-modulated wide viewing angle display
CN103604536B (en) * 2013-11-27 2015-07-29 东南大学 A kind of condenser type surface micromachined residual stress test structure
WO2015175518A1 (en) * 2014-05-12 2015-11-19 Clearink Displays Llc Two particle total internal reflection image display
KR20150131577A (en) * 2014-05-15 2015-11-25 엘지전자 주식회사 Glass Type Terminal
US10454239B2 (en) 2015-08-28 2019-10-22 International Business Machines Corporation Wafer scale monolithic integration of lasers, modulators, and other optical components using ALD optical coatings
EP3400427A1 (en) * 2016-01-08 2018-11-14 Technische Universiteit Eindhoven Integrated spectrometer and optomechanical sensor
CN109196405B (en) 2016-05-27 2021-09-10 浜松光子学株式会社 Method for producing a Fabry-Perot interference filter
JP6341959B2 (en) 2016-05-27 2018-06-13 浜松ホトニクス株式会社 Manufacturing method of Fabry-Perot interference filter
WO2018037724A1 (en) * 2016-08-24 2018-03-01 浜松ホトニクス株式会社 Fabry-perot interference filter
TWI612281B (en) 2016-09-26 2018-01-21 財團法人工業技術研究院 Interference splitter package device
CN107462954B (en) * 2017-09-06 2019-06-07 四川梓冠光电科技有限公司 A kind of mini micro electronmechanical adjustable optical attenuator
CN107555395B (en) * 2017-09-08 2019-06-07 厦门大学 The integrated device that optoelectronic position sensing chip is bonded with electric heating micro mirror
TWI651547B (en) * 2017-09-29 2019-02-21 胡繼忠 Slanted light emitting unit and 2d/3d swithcable or concurrent display device
CN108896222B (en) * 2018-07-27 2020-06-23 京东方科技集团股份有限公司 Pressure sensor and method for detecting pressure by using same
DE102019205184A1 (en) * 2019-04-11 2020-10-15 Robert Bosch Gmbh Capacitor device for an optical filter
CN110433878B (en) * 2019-08-21 2021-06-25 北京工业大学 Liquid detection chip based on VCSEL coupling array optical phase difference
WO2021119605A1 (en) * 2019-12-12 2021-06-17 Texas Instruments Incorporated Bias voltage adjustment for a phase light modulator
US11082132B1 (en) 2020-04-07 2021-08-03 Bradley T Sako Optoelectronic systems and methods for inspection of optically encoded data

Citations (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2534846A (en) * 1946-06-20 1950-12-19 Emi Ltd Color filter
US3439973A (en) * 1963-06-28 1969-04-22 Siemens Ag Polarizing reflector for electromagnetic wave radiation in the micron wavelength
US3653741A (en) * 1970-02-16 1972-04-04 Alvin M Marks Electro-optical dipolar material
US3656836A (en) * 1968-07-05 1972-04-18 Thomson Csf Light modulator
US3725868A (en) * 1970-10-19 1973-04-03 Burroughs Corp Small reconfigurable processor for a variety of data processing applications
US3813265A (en) * 1970-02-16 1974-05-28 A Marks Electro-optical dipolar material
US3955880A (en) * 1973-07-20 1976-05-11 Organisation Europeenne De Recherches Spatiales Infrared radiation modulator
US4099854A (en) * 1976-10-12 1978-07-11 The Unites States Of America As Represented By The Secretary Of The Navy Optical notch filter utilizing electric dipole resonance absorption
US4196396A (en) * 1976-10-15 1980-04-01 Bell Telephone Laboratories, Incorporated Interferometer apparatus using electro-optic material with feedback
US4228437A (en) * 1979-06-26 1980-10-14 The United States Of America As Represented By The Secretary Of The Navy Wideband polarization-transforming electromagnetic mirror
US4377324A (en) * 1980-08-04 1983-03-22 Honeywell Inc. Graded index Fabry-Perot optical filter device
US4389096A (en) * 1977-12-27 1983-06-21 Matsushita Electric Industrial Co., Ltd. Image display apparatus of liquid crystal valve projection type
US4403248A (en) * 1980-03-04 1983-09-06 U.S. Philips Corporation Display device with deformable reflective medium
US4445050A (en) * 1981-12-15 1984-04-24 Marks Alvin M Device for conversion of light power to electric power
US4519676A (en) * 1982-02-01 1985-05-28 U.S. Philips Corporation Passive display device
US4531126A (en) * 1981-05-18 1985-07-23 Societe D'etude Du Radant Method and device for analyzing a very high frequency radiation beam of electromagnetic waves
US4663083A (en) * 1978-05-26 1987-05-05 Marks Alvin M Electro-optical dipole suspension with reflective-absorptive-transmissive characteristics
US4681403A (en) * 1981-07-16 1987-07-21 U.S. Philips Corporation Display device with micromechanical leaf spring switches
US4748366A (en) * 1986-09-02 1988-05-31 Taylor George W Novel uses of piezoelectric materials for creating optical effects
US4786128A (en) * 1986-12-02 1988-11-22 Quantum Diagnostics, Ltd. Device for modulating and reflecting electromagnetic radiation employing electro-optic layer having a variable index of refraction
US4790635A (en) * 1986-04-25 1988-12-13 The Secretary Of State For Defence In Her Brittanic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Electro-optical device
US4900395A (en) * 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US4937496A (en) * 1987-05-16 1990-06-26 W. C. Heraeus Gmbh Xenon short arc discharge lamp
US4954789A (en) * 1989-09-28 1990-09-04 Texas Instruments Incorporated Spatial light modulator
US4982184A (en) * 1989-01-03 1991-01-01 General Electric Company Electrocrystallochromic display and element
US5022745A (en) * 1989-09-07 1991-06-11 Massachusetts Institute Of Technology Electrostatically deformable single crystal dielectrically coated mirror
US5044736A (en) * 1990-11-06 1991-09-03 Motorola, Inc. Configurable optical filter or display
US5075796A (en) * 1990-05-31 1991-12-24 Eastman Kodak Company Optical article for multicolor imaging
US5078479A (en) * 1990-04-20 1992-01-07 Centre Suisse D'electronique Et De Microtechnique Sa Light modulation device with matrix addressing
US5124834A (en) * 1989-11-16 1992-06-23 General Electric Company Transferrable, self-supporting pellicle for elastomer light valve displays and method for making the same
US5136669A (en) * 1991-03-15 1992-08-04 Sperry Marine Inc. Variable ratio fiber optic coupler optical signal processing element
US5142414A (en) * 1991-04-22 1992-08-25 Koehler Dale R Electrically actuatable temporal tristimulus-color device
US5153771A (en) * 1990-07-18 1992-10-06 Northrop Corporation Coherent light modulation and detector
US5168406A (en) * 1991-07-31 1992-12-01 Texas Instruments Incorporated Color deformable mirror device and method for manufacture
US5172262A (en) * 1985-10-30 1992-12-15 Texas Instruments Incorporated Spatial light modulator and method
US5212582A (en) * 1992-03-04 1993-05-18 Texas Instruments Incorporated Electrostatically controlled beam steering device and method
US5228013A (en) * 1992-01-10 1993-07-13 Bik Russell J Clock-painting device and method for indicating the time-of-day with a non-traditional, now analog artistic panel of digital electronic visual displays
US5231532A (en) * 1992-02-05 1993-07-27 Texas Instruments Incorporated Switchable resonant filter for optical radiation
US5233459A (en) * 1991-03-06 1993-08-03 Massachusetts Institute Of Technology Electric display device
US5293272A (en) * 1992-08-24 1994-03-08 Physical Optics Corporation High finesse holographic fabry-perot etalon and method of fabricating
US5311360A (en) * 1992-04-28 1994-05-10 The Board Of Trustees Of The Leland Stanford, Junior University Method and apparatus for modulating a light beam
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5326430A (en) * 1992-09-24 1994-07-05 International Business Machines Corporation Cooling microfan arrangements and process
US5345328A (en) * 1992-08-12 1994-09-06 Sandia Corporation Tandem resonator reflectance modulator
US5358601A (en) * 1991-09-24 1994-10-25 Micron Technology, Inc. Process for isotropically etching semiconductor devices
US5381232A (en) * 1992-05-19 1995-01-10 Akzo Nobel N.V. Fabry-perot with device mirrors including a dielectric coating outside the resonant cavity
US5381253A (en) * 1991-11-14 1995-01-10 Board Of Regents Of University Of Colorado Chiral smectic liquid crystal optical modulators having variable retardation
US5401983A (en) * 1992-04-08 1995-03-28 Georgia Tech Research Corporation Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices
US5497172A (en) * 1994-06-13 1996-03-05 Texas Instruments Incorporated Pulse width modulation for spatial light modulator with split reset addressing
US5500761A (en) * 1994-01-27 1996-03-19 At&T Corp. Micromechanical modulator
US5500635A (en) * 1990-02-20 1996-03-19 Mott; Jonathan C. Products incorporating piezoelectric material
US5526327A (en) * 1994-03-15 1996-06-11 Cordova, Jr.; David J. Spatial displacement time display
US5552925A (en) * 1993-09-07 1996-09-03 John M. Baker Electro-micro-mechanical shutters on transparent substrates
US5579149A (en) * 1993-09-13 1996-11-26 Csem Centre Suisse D'electronique Et De Microtechnique Sa Miniature network of light obturators
US5619059A (en) * 1994-09-28 1997-04-08 National Research Council Of Canada Color deformable mirror device having optical thin film interference color coatings
US5629790A (en) * 1993-10-18 1997-05-13 Neukermans; Armand P. Micromachined torsional scanner
US5633652A (en) * 1984-02-17 1997-05-27 Canon Kabushiki Kaisha Method for driving optical modulation device
US5636052A (en) * 1994-07-29 1997-06-03 Lucent Technologies Inc. Direct view display based on a micromechanical modulation
US5636185A (en) * 1995-03-10 1997-06-03 Boit Incorporated Dynamically changing liquid crystal display timekeeping apparatus
US5638084A (en) * 1992-05-22 1997-06-10 Dielectric Systems International, Inc. Lighting-independent color video display
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
US5641391A (en) * 1995-05-15 1997-06-24 Hunter; Ian W. Three dimensional microfabrication by localized electrodeposition and etching
US5673139A (en) * 1993-07-19 1997-09-30 Medcom, Inc. Microelectromechanical television scanning device and method for making the same
US5683591A (en) * 1993-05-25 1997-11-04 Robert Bosch Gmbh Process for producing surface micromechanical structures
US5703710A (en) * 1994-09-09 1997-12-30 Deacon Research Method for manipulating optical energy using poled structure
US5710656A (en) * 1996-07-30 1998-01-20 Lucent Technologies Inc. Micromechanical optical modulator having a reduced-mass composite membrane
US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
US5739945A (en) * 1995-09-29 1998-04-14 Tayebati; Parviz Electrically tunable optical filter utilizing a deformable multi-layer mirror
US5784190A (en) * 1995-04-27 1998-07-21 John M. Baker Electro-micro-mechanical shutters on transparent substrates
US5793504A (en) * 1996-08-07 1998-08-11 Northrop Grumman Corporation Hybrid angular/spatial holographic multiplexer
US5808780A (en) * 1997-06-09 1998-09-15 Texas Instruments Incorporated Non-contacting micromechanical optical switch
US5835255A (en) * 1986-04-23 1998-11-10 Etalon, Inc. Visible spectrum modulator arrays
US5943158A (en) * 1998-05-05 1999-08-24 Lucent Technologies Inc. Micro-mechanical, anti-reflection, switched optical modulator array and fabrication method
US6040937A (en) * 1994-05-05 2000-03-21 Etalon, Inc. Interferometric modulation
US6100872A (en) * 1993-05-25 2000-08-08 Canon Kabushiki Kaisha Display control method and apparatus
US6243149B1 (en) * 1994-10-27 2001-06-05 Massachusetts Institute Of Technology Method of imaging using a liquid crystal display device

Family Cites Families (557)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US610332A (en) * 1898-09-06 End-gate fastener
US12577A (en) * 1855-03-20 Improvement in sewing-machines
US4954A (en) * 1847-02-05 Floating dry-dock
US6347009B1 (en) * 1997-08-06 2002-02-12 Nikon Corporation Illuminating light selection device for a microscope
US2588792A (en) 1947-11-26 1952-03-11 Libbey Owens Ford Glass Co Adjustable mounting for automobile rearview mirrors
US2518647A (en) 1948-01-07 1950-08-15 Celanese Corp Interferometer means for thickness measurements
US2677714A (en) 1951-09-21 1954-05-04 Alois Vogt Dr Optical-electrical conversion device comprising a light-permeable metal electrode
US3247392A (en) 1961-05-17 1966-04-19 Optical Coating Laboratory Inc Optical coating and assembly used as a band pass interference filter reflecting in the ultraviolet and infrared
US3448334A (en) 1966-09-30 1969-06-03 North American Rockwell Multicolored e.l. displays using external colored light sources
DE10127319B4 (en) * 2001-06-06 2004-03-18 Andrea Burkhardt Wellness equipment
US3728030A (en) 1970-06-22 1973-04-17 Cary Instruments Polarization interferometer
US3679313A (en) 1970-10-23 1972-07-25 Bell Telephone Labor Inc Dispersive element for optical pulse compression
JPS4946974A (en) 1972-09-11 1974-05-07
US3982239A (en) 1973-02-07 1976-09-21 North Hills Electronics, Inc. Saturation drive arrangements for optically bistable displays
US3886310A (en) 1973-08-22 1975-05-27 Westinghouse Electric Corp Electrostatically deflectable light valve with improved diffraction properties
US3899295A (en) 1973-11-23 1975-08-12 Bio Medical Sciences Inc Integrity indicator
JPS5110798A (en) * 1974-07-17 1976-01-28 Citizen Watch Co Ltd
DE2703688A1 (en) 1977-01-29 1978-08-10 Bosch Gmbh Robert PROTECTIVE DEVICE FOR LIGHT-PERMEABLY LOCKED, ESPECIALLY GLAZED, ROOM OPENINGS, AS PROTECTION AGAINST EXCESSIVE HEAT TRANSMISSION
US4200472A (en) 1978-06-05 1980-04-29 The Regents Of The University Of California Solar power system and high efficiency photovoltaic cells used therein
US4224565A (en) 1978-06-05 1980-09-23 Bell Telephone Laboratories, Incorporated Moisture level determination in sealed packages
DE3012253A1 (en) 1980-03-28 1981-10-15 Hoechst Ag, 6000 Frankfurt METHOD FOR VISIBLE MASKING OF CARGO IMAGES AND A DEVICE SUITABLE FOR THIS
DE3109653A1 (en) 1980-03-31 1982-01-28 Jenoptik Jena Gmbh, Ddr 6900 Jena "RESONANCE ABSORBER"
US4421381A (en) 1980-04-04 1983-12-20 Yokogawa Hokushin Electric Corp. Mechanical vibrating element
US4441791A (en) 1980-09-02 1984-04-10 Texas Instruments Incorporated Deformable mirror light modulator
US4400577A (en) 1981-07-16 1983-08-23 Spear Reginald G Thin solar cells
US4571603A (en) 1981-11-03 1986-02-18 Texas Instruments Incorporated Deformable mirror electrostatic printer
US4459409A (en) * 1982-05-25 1984-07-10 American Cyanamid Company Process for the preparation of 2,3-quinolinedicarboxylic acids
US4500171A (en) 1982-06-02 1985-02-19 Texas Instruments Incorporated Process for plastic LCD fill hole sealing
US4633031A (en) 1982-09-24 1986-12-30 Todorof William J Multi-layer thin film, flexible silicon alloy photovoltaic cell
US4497974A (en) 1982-11-22 1985-02-05 Exxon Research & Engineering Co. Realization of a thin film solar cell with a detached reflector
US4482213A (en) 1982-11-23 1984-11-13 Texas Instruments Incorporated Perimeter seal reinforcement holes for plastic LCDs
US4688068A (en) 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
US4498953A (en) 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
JPS60159731A (en) 1984-01-30 1985-08-21 Sharp Corp Liquid crystal display body
US4798437A (en) 1984-04-13 1989-01-17 Massachusetts Institute Of Technology Method and apparatus for processing analog optical wave signals
US4710732A (en) 1984-07-31 1987-12-01 Texas Instruments Incorporated Spatial light modulator and method
US4566935A (en) 1984-07-31 1986-01-28 Texas Instruments Incorporated Spatial light modulator and method
US4709995A (en) 1984-08-18 1987-12-01 Canon Kabushiki Kaisha Ferroelectric display panel and driving method therefor to achieve gray scale
US4662746A (en) 1985-10-30 1987-05-05 Texas Instruments Incorporated Spatial light modulator and method
US5096279A (en) 1984-08-31 1992-03-17 Texas Instruments Incorporated Spatial light modulator and method
US5061049A (en) 1984-08-31 1991-10-29 Texas Instruments Incorporated Spatial light modulator and method
US4596992A (en) 1984-08-31 1986-06-24 Texas Instruments Incorporated Linear spatial light modulator and printer
US4560435A (en) 1984-10-01 1985-12-24 International Business Machines Corporation Composite back-etch/lift-off stencil for proximity effect minimization
US4615595A (en) 1984-10-10 1986-10-07 Texas Instruments Incorporated Frame addressed spatial light modulator
JPS6193678A (en) 1984-10-15 1986-05-12 Sharp Corp Photoelectric conversion device
US5345322A (en) 1985-03-01 1994-09-06 Manchester R&D Limited Partnership Complementary color liquid crystal display
US4655554A (en) 1985-03-06 1987-04-07 The United States Of America As Represented By The Secretary Of The Air Force Spatial light modulator having a capacitively coupled photoconductor
WO1987002472A1 (en) 1985-10-16 1987-04-23 British Telecommunications Public Limited Company Movable member-mounting
JPS62119502A (en) 1985-11-18 1987-05-30 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション Spectrum-filter
GB2186708B (en) 1985-11-26 1990-07-11 Sharp Kk A variable interferometric device and a process for the production of the same
US4705361A (en) * 1985-11-27 1987-11-10 Texas Instruments Incorporated Spatial light modulator
GB8621439D0 (en) 1986-09-05 1986-10-15 Secr Defence Electro-optic device
GB8623240D0 (en) * 1986-09-26 1986-10-29 Emi Plc Thorn Display device
FR2605444A1 (en) 1986-10-17 1988-04-22 Thomson Csf METHOD FOR CONTROLLING AN ELECTROOPTIC MATRIX SCREEN AND CONTROL CIRCUIT USING THE SAME
EP0278038A1 (en) 1987-02-13 1988-08-17 Battelle-Institut e.V. Active flat type display panel
US4822993A (en) * 1987-02-17 1989-04-18 Optron Systems, Inc. Low-cost, substantially cross-talk free high spatial resolution 2-D bistable light modulator
EP0287996A3 (en) * 1987-04-20 1989-02-08 Hitachi, Ltd. Liquid crystal display and method of driving the same
NL8701138A (en) 1987-05-13 1988-12-01 Philips Nv ELECTROSCOPIC IMAGE DISPLAY.
US5091983A (en) 1987-06-04 1992-02-25 Walter Lukosz Optical modulation apparatus and measurement method
US4900136A (en) * 1987-08-11 1990-02-13 North American Philips Corporation Method of metallizing silica-containing gel and solid state light modulator incorporating the metallized gel
US4857978A (en) 1987-08-11 1989-08-15 North American Philips Corporation Solid state light modulator incorporating metallized gel and method of metallization
GB2210540A (en) 1987-09-30 1989-06-07 Philips Electronic Associated Method of and arrangement for modifying stored data,and method of and arrangement for generating two-dimensional images
JP2511071B2 (en) 1987-10-15 1996-06-26 シャープ株式会社 Driving method for color display device
CA1319767C (en) 1987-11-26 1993-06-29 Canon Kabushiki Kaisha Display apparatus
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process
US4830038A (en) 1988-01-20 1989-05-16 Atlantic Richfield Company Photovoltaic module
US4956619A (en) 1988-02-19 1990-09-11 Texas Instruments Incorporated Spatial light modulator
US4856863A (en) 1988-06-22 1989-08-15 Texas Instruments Incorporated Optical fiber interconnection network including spatial light modulator
US5028939A (en) 1988-08-23 1991-07-02 Texas Instruments Incorporated Spatial light modulator system
JPH0268513A (en) 1988-09-05 1990-03-08 Fuji Photo Film Co Ltd Color filter
US4925259A (en) 1988-10-20 1990-05-15 The United States Of America As Represented By The United States Department Of Energy Multilayer optical dielectric coating
JP2700903B2 (en) * 1988-09-30 1998-01-21 シャープ株式会社 Liquid crystal display
JPH0791089B2 (en) 1988-12-13 1995-10-04 セントラル硝子株式会社 Heat ray reflective glass
US4973131A (en) 1989-02-03 1990-11-27 Mcdonnell Douglas Corporation Modulator mirror
KR100202246B1 (en) 1989-02-27 1999-06-15 윌리엄 비. 켐플러 Apparatus and method for digital video system
US5170156A (en) 1989-02-27 1992-12-08 Texas Instruments Incorporated Multi-frequency two dimensional display system
US5206629A (en) 1989-02-27 1993-04-27 Texas Instruments Incorporated Spatial light modulator and memory for digitized video display
US5079544A (en) 1989-02-27 1992-01-07 Texas Instruments Incorporated Standard independent digitized video system
US5272473A (en) 1989-02-27 1993-12-21 Texas Instruments Incorporated Reduced-speckle display system
US5192946A (en) 1989-02-27 1993-03-09 Texas Instruments Incorporated Digitized color video display system
US5446479A (en) 1989-02-27 1995-08-29 Texas Instruments Incorporated Multi-dimensional array video processor system
US5287096A (en) 1989-02-27 1994-02-15 Texas Instruments Incorporated Variable luminosity display system
US5214419A (en) 1989-02-27 1993-05-25 Texas Instruments Incorporated Planarized true three dimensional display
US5162787A (en) 1989-02-27 1992-11-10 Texas Instruments Incorporated Apparatus and method for digitized video system utilizing a moving display surface
US5214420A (en) 1989-02-27 1993-05-25 Texas Instruments Incorporated Spatial light modulator projection system with random polarity light
JP2738557B2 (en) 1989-03-10 1998-04-08 三菱電機株式会社 Multilayer solar cell
US5218472A (en) 1989-03-22 1993-06-08 Alcan International Limited Optical interference structures incorporating porous films
JP2722114B2 (en) 1989-06-28 1998-03-04 キヤノン株式会社 Method and apparatus for continuously forming large-area functional deposition film by microwave plasma CVD
JPH03160494A (en) * 1989-11-10 1991-07-10 Internatl Business Mach Corp <Ibm> Datacprocessing device
US5037173A (en) 1989-11-22 1991-08-06 Texas Instruments Incorporated Optical interconnection network
JPH03199920A (en) 1989-12-27 1991-08-30 Tdk Corp Light-displacement transducer and sensor
JP2910114B2 (en) 1990-01-20 1999-06-23 ソニー株式会社 Electronics
US5227900A (en) 1990-03-20 1993-07-13 Canon Kabushiki Kaisha Method of driving ferroelectric liquid crystal element
US5138309A (en) * 1990-04-03 1992-08-11 Aura Systems, Inc. Electronic switch matrix for a video display system
US5099353A (en) 1990-06-29 1992-03-24 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5216537A (en) 1990-06-29 1993-06-01 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
US5142405A (en) 1990-06-29 1992-08-25 Texas Instruments Incorporated Bistable dmd addressing circuit and method
US5018256A (en) 1990-06-29 1991-05-28 Texas Instruments Incorporated Architecture and process for integrating DMD with control circuit substrates
DE69113150T2 (en) 1990-06-29 1996-04-04 Texas Instruments Inc Deformable mirror device with updated grid.
US5083857A (en) 1990-06-29 1992-01-28 Texas Instruments Incorporated Multi-level deformable mirror device
US5062689A (en) * 1990-08-21 1991-11-05 Koehler Dale R Electrostatically actuatable light modulating device
US5082366A (en) * 1990-08-30 1992-01-21 Laser Technology, Inc. Apparatus and method for detecting leaks in packages
JPH0793451B2 (en) 1990-09-19 1995-10-09 株式会社日立製作所 Multi-junction amorphous silicon solar cell
US5526688A (en) 1990-10-12 1996-06-18 Texas Instruments Incorporated Digital flexure beam accelerometer and method
US5192395A (en) 1990-10-12 1993-03-09 Texas Instruments Incorporated Method of making a digital flexure beam accelerometer
US5602671A (en) 1990-11-13 1997-02-11 Texas Instruments Incorporated Low surface energy passivation layer for micromechanical devices
US5331454A (en) 1990-11-13 1994-07-19 Texas Instruments Incorporated Low reset voltage process for DMD
JP2719230B2 (en) 1990-11-22 1998-02-25 キヤノン株式会社 Photovoltaic element
US5175772A (en) 1991-01-02 1992-12-29 Motorola, Inc. Automated test for displays using display patterns
DE4108966C2 (en) 1991-03-19 1994-03-10 Iot Entwicklungsgesellschaft F Electro-optical interferometric light modulator
CA2063744C (en) 1991-04-01 2002-10-08 Paul M. Urbanus Digital micromirror device architecture and timing for use in a pulse-width modulated display system
US5226099A (en) 1991-04-26 1993-07-06 Texas Instruments Incorporated Digital micromirror shutter device
DE69218288T2 (en) * 1991-05-23 1997-06-26 Matsushita Electric Ind Co Ltd Holographic recording material, device for recording a hologram, method for its production and recording method
US5179274A (en) 1991-07-12 1993-01-12 Texas Instruments Incorporated Method for controlling operation of optical systems and devices
US5287215A (en) 1991-07-17 1994-02-15 Optron Systems, Inc. Membrane light modulation systems
US5170283A (en) 1991-07-24 1992-12-08 Northrop Corporation Silicon spatial light modulator
US5240818A (en) 1991-07-31 1993-08-31 Texas Instruments Incorporated Method for manufacturing a color filter for deformable mirror device
US5151585A (en) 1991-08-12 1992-09-29 Hughes Danbury Optical Systems, Inc. Coherent radiation detector
US5254980A (en) 1991-09-06 1993-10-19 Texas Instruments Incorporated DMD display system controller
US5459409A (en) 1991-09-10 1995-10-17 Photon Dynamics, Inc. Testing device for liquid crystal display base plate
US5315370A (en) 1991-10-23 1994-05-24 Bulow Jeffrey A Interferometric modulator for optical signal processing
US5563398A (en) 1991-10-31 1996-10-08 Texas Instruments Incorporated Spatial light modulator scanning system
US5367878A (en) * 1991-11-08 1994-11-29 University Of Southern California Transient energy release microdevices and methods
CA2081753C (en) 1991-11-22 2002-08-06 Jeffrey B. Sampsell Dmd scanner
US5233385A (en) 1991-12-18 1993-08-03 Texas Instruments Incorporated White light enhanced color field sequential projection
US5233456A (en) 1991-12-20 1993-08-03 Texas Instruments Incorporated Resonant mirror and method of manufacture
US5356488A (en) 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
US6381022B1 (en) 1992-01-22 2002-04-30 Northeastern University Light modulating device
CA2087625C (en) * 1992-01-23 2006-12-12 William E. Nelson Non-systolic time delay and integration printing
IL104084A (en) * 1992-01-24 1996-09-12 Bracco Int Bv Long-lasting aqueous suspensions of pressure-resistant gas-filled microvesicles their preparation and contrast agents consisting of them
US5296950A (en) 1992-01-31 1994-03-22 Texas Instruments Incorporated Optical signal free-space conversion board
JPH05216617A (en) 1992-01-31 1993-08-27 Canon Inc Display driving device and information processing system
US5877738A (en) * 1992-03-05 1999-03-02 Seiko Epson Corporation Liquid crystal element drive method, drive circuit, and display apparatus
JP3006266B2 (en) 1992-03-10 2000-02-07 トヨタ自動車株式会社 Solar cell element
EP0562424B1 (en) 1992-03-25 1997-05-28 Texas Instruments Incorporated Embedded optical calibration system
US5312513A (en) 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
JP2951146B2 (en) 1992-04-15 1999-09-20 キヤノン株式会社 Photovoltaic devices
DE69321873T2 (en) 1992-05-19 1999-05-20 Canon Kk Method and device for controlling a display
JPH0651250A (en) * 1992-05-20 1994-02-25 Texas Instr Inc <Ti> Monolithic space optical modulator and memory package
JPH06214169A (en) * 1992-06-08 1994-08-05 Texas Instr Inc <Ti> Controllable optical and periodic surface filter
US5347377A (en) 1992-06-17 1994-09-13 Eastman Kodak Company Planar waveguide liquid crystal variable retarder
US5255093A (en) * 1992-06-19 1993-10-19 Panasonic Technologies, Inc. Apparatus and a method for limiting gain in a digital gamma corrector
JPH0651721A (en) 1992-07-29 1994-02-25 Canon Inc Display controller
US5818095A (en) 1992-08-11 1998-10-06 Texas Instruments Incorporated High-yield spatial light modulator with light blocking layer
US5737050A (en) 1992-08-25 1998-04-07 Matsushita Electric Industrial Co., Ltd. Light valve having reduced reflected light, high brightness and high contrast
US5327286A (en) 1992-08-31 1994-07-05 Texas Instruments Incorporated Real time optical correlation system
US5325116A (en) 1992-09-18 1994-06-28 Texas Instruments Incorporated Device for writing to and reading from optical storage media
US5488505A (en) * 1992-10-01 1996-01-30 Engle; Craig D. Enhanced electrostatic shutter mosaic modulator
US5659374A (en) 1992-10-23 1997-08-19 Texas Instruments Incorporated Method of repairing defective pixels
DE69411957T2 (en) 1993-01-11 1999-01-14 Canon Kk Display line distribution system
JP3547160B2 (en) 1993-01-11 2004-07-28 テキサス インスツルメンツ インコーポレイテツド Spatial light modulator
FI96450C (en) 1993-01-13 1996-06-25 Vaisala Oy Single-channel gas concentration measurement method and equipment
US6674562B1 (en) * 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US7830587B2 (en) 1993-03-17 2010-11-09 Qualcomm Mems Technologies, Inc. Method and device for modulating light with semiconductor substrate
US5461411A (en) 1993-03-29 1995-10-24 Texas Instruments Incorporated Process and architecture for digital micromirror printer
US5498863A (en) 1993-04-30 1996-03-12 At&T Corp. Wavelength-sensitive detectors based on absorbers in standing waves
US5559358A (en) 1993-05-25 1996-09-24 Honeywell Inc. Opto-electro-mechanical device or filter, process for making, and sensors made therefrom
US6149190A (en) * 1993-05-26 2000-11-21 Kionix, Inc. Micromechanical accelerometer for automotive applications
US6199874B1 (en) * 1993-05-26 2001-03-13 Cornell Research Foundation Inc. Microelectromechanical accelerometer for automotive applications
US5489952A (en) 1993-07-14 1996-02-06 Texas Instruments Incorporated Method and device for multi-format television
US5365283A (en) 1993-07-19 1994-11-15 Texas Instruments Incorporated Color phase control for projection display using spatial light modulator
US5510824A (en) * 1993-07-26 1996-04-23 Texas Instruments, Inc. Spatial light modulator array
US5526172A (en) 1993-07-27 1996-06-11 Texas Instruments Incorporated Microminiature, monolithic, variable electrical signal processor and apparatus including same
US5619061A (en) * 1993-07-27 1997-04-08 Texas Instruments Incorporated Micromechanical microwave switching
US5581272A (en) 1993-08-25 1996-12-03 Texas Instruments Incorporated Signal generator for controlling a spatial light modulator
US5457493A (en) 1993-09-15 1995-10-10 Texas Instruments Incorporated Digital micro-mirror based image simulation system
US5497197A (en) 1993-11-04 1996-03-05 Texas Instruments Incorporated System and method for packaging data into video processor
US5526051A (en) 1993-10-27 1996-06-11 Texas Instruments Incorporated Digital television system
US5459602A (en) 1993-10-29 1995-10-17 Texas Instruments Micro-mechanical optical shutter
US5452024A (en) 1993-11-01 1995-09-19 Texas Instruments Incorporated DMD display system
JP3670282B2 (en) 1993-11-05 2005-07-13 シチズン時計株式会社 Solar cell device and manufacturing method thereof
JPH07152340A (en) 1993-11-30 1995-06-16 Rohm Co Ltd Display device
US5517347A (en) 1993-12-01 1996-05-14 Texas Instruments Incorporated Direct view deformable mirror device
CA2137059C (en) * 1993-12-03 2004-11-23 Texas Instruments Incorporated Dmd architecture to improve horizontal resolution
US5583688A (en) 1993-12-21 1996-12-10 Texas Instruments Incorporated Multi-level digital micromirror device
US5598565A (en) 1993-12-29 1997-01-28 Intel Corporation Method and apparatus for screen power saving
US5448314A (en) 1994-01-07 1995-09-05 Texas Instruments Method and apparatus for sequential color imaging
IL108506A (en) 1994-02-01 1997-06-10 Yeda Res & Dev Solar energy plant
FI94804C (en) 1994-02-17 1995-10-25 Vaisala Oy Electrically adjustable surface micromechanical Fabry-Perot interferometer for optical material analysis
DE4407067C2 (en) * 1994-03-03 2003-06-18 Unaxis Balzers Ag Dielectric interference filter system, LCD display and CCD arrangement as well as method for producing a dielectric interference filter system
US5444566A (en) 1994-03-07 1995-08-22 Texas Instruments Incorporated Optimized electronic operation of digital micromirror devices
US5729245A (en) * 1994-03-21 1998-03-17 Texas Instruments Incorporated Alignment for display having multiple spatial light modulators
US5665997A (en) 1994-03-31 1997-09-09 Texas Instruments Incorporated Grated landing area to eliminate sticking of micro-mechanical devices
GB9407116D0 (en) 1994-04-11 1994-06-01 Secr Defence Ferroelectric liquid crystal display with greyscale
US6710908B2 (en) * 1994-05-05 2004-03-23 Iridigm Display Corporation Controlling micro-electro-mechanical cavities
US20010003487A1 (en) 1996-11-05 2001-06-14 Mark W. Miles Visible spectrum modulator arrays
US7826120B2 (en) 1994-05-05 2010-11-02 Qualcomm Mems Technologies, Inc. Method and device for multi-color interferometric modulation
US7550794B2 (en) * 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US8081369B2 (en) 1994-05-05 2011-12-20 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US7460291B2 (en) * 1994-05-05 2008-12-02 Idc, Llc Separable modulator
US7138984B1 (en) 2001-06-05 2006-11-21 Idc, Llc Directly laminated touch sensitive screen
US7123216B1 (en) 1994-05-05 2006-10-17 Idc, Llc Photonic MEMS and structures
US7852545B2 (en) 1994-05-05 2010-12-14 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US7808694B2 (en) 1994-05-05 2010-10-05 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US7738157B2 (en) 1994-05-05 2010-06-15 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US6680792B2 (en) 1994-05-05 2004-01-20 Iridigm Display Corporation Interferometric modulation of radiation
EP0686934B1 (en) 1994-05-17 2001-09-26 Texas Instruments Incorporated Display device with pointer position detection
KR0135391B1 (en) 1994-05-28 1998-04-22 김광호 Self aligned thin film transistor for lcd and manufacture
US5673106A (en) 1994-06-17 1997-09-30 Texas Instruments Incorporated Printing system with self-monitoring and adjustment
US5454906A (en) 1994-06-21 1995-10-03 Texas Instruments Inc. Method of providing sacrificial spacer for micro-mechanical devices
US5920418A (en) 1994-06-21 1999-07-06 Matsushita Electric Industrial Co., Ltd. Diffractive optical modulator and method for producing the same, infrared sensor including such a diffractive optical modulator and method for producing the same, and display device including such a diffractive optical modulator
US5499062A (en) 1994-06-23 1996-03-12 Texas Instruments Incorporated Multiplexed memory timing with block reset and secondary memory
US5485304A (en) 1994-07-29 1996-01-16 Texas Instruments, Inc. Support posts for micro-mechanical devices
CN1157668A (en) * 1994-09-02 1997-08-20 拉德·哈桑·达巴 Reflective light valve modulator
US5544268A (en) * 1994-09-09 1996-08-06 Deacon Research Display panel with electrically-controlled waveguide-routing
US6053617A (en) 1994-09-23 2000-04-25 Texas Instruments Incorporated Manufacture method for micromechanical devices
US5594660A (en) 1994-09-30 1997-01-14 Cirrus Logic, Inc. Programmable audio-video synchronization method and apparatus for multimedia systems
US5650881A (en) 1994-11-02 1997-07-22 Texas Instruments Incorporated Support post architecture for micromechanical devices
FR2726960B1 (en) 1994-11-10 1996-12-13 Thomson Csf PROCESS FOR PRODUCING MAGNETORESISTIVE TRANSDUCERS
US5552924A (en) 1994-11-14 1996-09-03 Texas Instruments Incorporated Micromechanical device having an improved beam
US5474865A (en) 1994-11-21 1995-12-12 Sematech, Inc. Globally planarized binary optical mask using buried absorbers
JPH08153700A (en) 1994-11-25 1996-06-11 Semiconductor Energy Lab Co Ltd Anisotropic etching of electrically conductive coating
JP2916887B2 (en) 1994-11-29 1999-07-05 キヤノン株式会社 Electron emitting element, electron source, and method of manufacturing image forming apparatus
US5610624A (en) * 1994-11-30 1997-03-11 Texas Instruments Incorporated Spatial light modulator with reduced possibility of an on state defect
US5550373A (en) 1994-12-30 1996-08-27 Honeywell Inc. Fabry-Perot micro filter-detector
US5612713A (en) * 1995-01-06 1997-03-18 Texas Instruments Incorporated Digital micro-mirror device with block data loading
JPH08202318A (en) 1995-01-31 1996-08-09 Canon Inc Display control method and its display system for display device having storability
US5567334A (en) 1995-02-27 1996-10-22 Texas Instruments Incorporated Method for creating a digital micromirror device using an aluminum hard mask
US5610438A (en) * 1995-03-08 1997-03-11 Texas Instruments Incorporated Micro-mechanical device with non-evaporable getter
US5535047A (en) 1995-04-18 1996-07-09 Texas Instruments Incorporated Active yoke hidden hinge digital micromirror device
US5727473A (en) * 1995-05-08 1998-03-17 Csx Corporation Rotary lock for a split ramp railway car
US5886688A (en) 1995-06-02 1999-03-23 National Semiconductor Corporation Integrated solar panel and liquid crystal display for portable computer or the like
US5661592A (en) 1995-06-07 1997-08-26 Silicon Light Machines Method of making and an apparatus for a flat diffraction grating light valve
US6046840A (en) * 1995-06-19 2000-04-04 Reflectivity, Inc. Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements
US5701405A (en) * 1995-06-21 1997-12-23 Apple Computer, Inc. Method and apparatus for directly evaluating a parameter interpolation function used in rendering images in a graphics system that uses screen partitioning
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
US6080467A (en) 1995-06-26 2000-06-27 3M Innovative Properties Company High efficiency optical devices
JP3489273B2 (en) 1995-06-27 2004-01-19 株式会社デンソー Manufacturing method of semiconductor dynamic quantity sensor
KR100213026B1 (en) 1995-07-27 1999-08-02 윤종용 Dmd and fabrication method for dmd
US5569332A (en) 1995-08-07 1996-10-29 United Solar Systems Corporation Optically enhanced photovoltaic back reflector
US5757536A (en) 1995-08-30 1998-05-26 Sandia Corporation Electrically-programmable diffraction grating
DE69535818D1 (en) 1995-09-20 2008-10-02 Hitachi Ltd IMAGE DISPLAY DEVICE
US6324192B1 (en) 1995-09-29 2001-11-27 Coretek, Inc. Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
US5661591A (en) 1995-09-29 1997-08-26 Texas Instruments Incorporated Optical switch having an analog beam for steering light
GB9522135D0 (en) 1995-10-30 1996-01-03 John Mcgavigan Holdings Limite Display panels
JPH09127551A (en) 1995-10-31 1997-05-16 Sharp Corp Semiconductor device and active matrix substrate
JP4431196B2 (en) 1995-11-06 2010-03-10 アイディーシー エルエルシー Interferometric modulation
US7907319B2 (en) 1995-11-06 2011-03-15 Qualcomm Mems Technologies, Inc. Method and device for modulating light with optical compensation
US5740150A (en) 1995-11-24 1998-04-14 Kabushiki Kaisha Toshiba Galvanomirror and optical disk drive using the same
US5999306A (en) 1995-12-01 1999-12-07 Seiko Epson Corporation Method of manufacturing spatial light modulator and electronic device employing it
US5737115A (en) * 1995-12-15 1998-04-07 Xerox Corporation Additive color tristate light valve twisting ball display
US5825528A (en) * 1995-12-26 1998-10-20 Lucent Technologies Inc. Phase-mismatched fabry-perot cavity micromechanical modulator
JP3799092B2 (en) * 1995-12-29 2006-07-19 アジレント・テクノロジーズ・インク Light modulation device and display device
US5771321A (en) 1996-01-04 1998-06-23 Massachusetts Institute Of Technology Micromechanical optical switch and flat panel display
EP0786911B1 (en) 1996-01-26 2003-09-10 Sharp Kabushiki Kaisha Autostereoscopic display
US5751469A (en) 1996-02-01 1998-05-12 Lucent Technologies Inc. Method and apparatus for an improved micromechanical modulator
US6114862A (en) * 1996-02-14 2000-09-05 Stmicroelectronics, Inc. Capacitive distance sensor
US6320394B1 (en) * 1996-02-14 2001-11-20 Stmicroelectronics S.R.L. Capacitive distance sensor
US6624944B1 (en) * 1996-03-29 2003-09-23 Texas Instruments Incorporated Fluorinated coating for an optical element
JPH09275220A (en) 1996-04-04 1997-10-21 Mitsui Toatsu Chem Inc Semiconductor thin film
US5907426A (en) 1996-06-28 1999-05-25 Kabushiki Kaisha Toyota Chuo Kenkyusho Stabilizing device for optical modulator
US5720827A (en) 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
US5838484A (en) 1996-08-19 1998-11-17 Lucent Technologies Inc. Micromechanical optical modulator with linear operating characteristic
US5828088A (en) 1996-09-05 1998-10-27 Astropower, Inc. Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes
US5912758A (en) * 1996-09-11 1999-06-15 Texas Instruments Incorporated Bipolar reset for spatial light modulators
GB9619781D0 (en) 1996-09-23 1996-11-06 Secr Defence Multi layer interference coatings
US5975703A (en) 1996-09-30 1999-11-02 Digital Optics International Image projection system
US5771116A (en) * 1996-10-21 1998-06-23 Texas Instruments Incorporated Multiple bias level reset waveform for enhanced DMD control
US7929197B2 (en) 1996-11-05 2011-04-19 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
FR2756105B1 (en) 1996-11-19 1999-03-26 Commissariat Energie Atomique MULTISPECTRAL DETECTOR WITH RESONANT CAVITY
US6094285A (en) 1996-12-04 2000-07-25 Trw Inc. All optical RF signal channelizer
US7830588B2 (en) 1996-12-19 2010-11-09 Qualcomm Mems Technologies, Inc. Method of making a light modulating display device and associated transistor circuitry and structures thereof
US6028689A (en) 1997-01-24 2000-02-22 The United States Of America As Represented By The Secretary Of The Air Force Multi-motion micromirror
US5786927A (en) 1997-03-12 1998-07-28 Lucent Technologies Inc. Gas-damped micromechanical structure
US6384952B1 (en) 1997-03-27 2002-05-07 Mems Optical Inc. Vertical comb drive actuated deformable mirror device and method
US5768009A (en) * 1997-04-18 1998-06-16 E-Beam Light valve target comprising electrostatically-repelled micro-mirrors
DE69806846T2 (en) * 1997-05-08 2002-12-12 Texas Instruments Inc Improvements for spatial light modulators
US6480177B2 (en) 1997-06-04 2002-11-12 Texas Instruments Incorporated Blocked stepped address voltage for micromechanical devices
US5896796A (en) 1997-06-06 1999-04-27 Chih; Chen-Keng Device for punching holes in a bicycle rim
US5914803A (en) 1997-07-01 1999-06-22 Daewoo Electronics Co., Ltd. Thin film actuated mirror array in an optical projection system and method for manufacturing the same
US6239777B1 (en) 1997-07-22 2001-05-29 Kabushiki Kaisha Toshiba Display device
JPH1154773A (en) 1997-08-01 1999-02-26 Canon Inc Photovoltaic element and its manufacture
US5867302A (en) * 1997-08-07 1999-02-02 Sandia Corporation Bistable microelectromechanical actuator
KR19990016714A (en) 1997-08-19 1999-03-15 윤종용 Multi-sided image display type rear projection project device
US6031653A (en) 1997-08-28 2000-02-29 California Institute Of Technology Low-cost thin-metal-film interference filters
US5978127A (en) 1997-09-09 1999-11-02 Zilog, Inc. Light phase grating device
US5994174A (en) 1997-09-29 1999-11-30 The Regents Of The University Of California Method of fabrication of display pixels driven by silicon thin film transistors
US6333556B1 (en) 1997-10-09 2001-12-25 Micron Technology, Inc. Insulating materials
US5822170A (en) 1997-10-09 1998-10-13 Honeywell Inc. Hydrophobic coating for reducing humidity effect in electrostatic actuators
US5972193A (en) 1997-10-10 1999-10-26 Industrial Technology Research Institute Method of manufacturing a planar coil using a transparency substrate
US6088102A (en) 1997-10-31 2000-07-11 Silicon Light Machines Display apparatus including grating light-valve array and interferometric optical system
US6028690A (en) * 1997-11-26 2000-02-22 Texas Instruments Incorporated Reduced micromirror mirror gaps for improved contrast ratio
US5920421A (en) 1997-12-10 1999-07-06 Daewoo Electronics Co., Ltd. Thin film actuated mirror array in an optical projection system and method for manufacturing the same
US6180428B1 (en) * 1997-12-12 2001-01-30 Xerox Corporation Monolithic scanning light emitting devices using micromachining
US6381381B1 (en) 1998-01-20 2002-04-30 Seiko Epson Corporation Optical switching device and image display device
JPH11211999A (en) 1998-01-28 1999-08-06 Teijin Ltd Optical modulating element and display device
US5914804A (en) 1998-01-28 1999-06-22 Lucent Technologies Inc Double-cavity micromechanical optical modulator with plural multilayer mirrors
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6100861A (en) 1998-02-17 2000-08-08 Rainbow Displays, Inc. Tiled flat panel display with improved color gamut
US6195196B1 (en) * 1998-03-13 2001-02-27 Fuji Photo Film Co., Ltd. Array-type exposing device and flat type display incorporating light modulator and driving method thereof
US6262697B1 (en) 1998-03-20 2001-07-17 Eastman Kodak Company Display having viewable and conductive images
WO1999049522A1 (en) 1998-03-25 1999-09-30 Tdk Corporation Solar cell module
WO1999052006A2 (en) 1998-04-08 1999-10-14 Etalon, Inc. Interferometric modulation of radiation
US7532377B2 (en) 1998-04-08 2009-05-12 Idc, Llc Movable micro-electromechanical device
JP4520545B2 (en) 1998-04-17 2010-08-04 セイコーインスツル株式会社 Reflective liquid crystal display device and manufacturing method thereof
US6097145A (en) 1998-04-27 2000-08-01 Copytele, Inc. Aerogel-based phase transition flat panel display
US6160833A (en) 1998-05-06 2000-12-12 Xerox Corporation Blue vertical cavity surface emitting laser
US6473072B1 (en) 1998-05-12 2002-10-29 E Ink Corporation Microencapsulated electrophoretic electrostatically-addressed media for drawing device applications
US6282010B1 (en) 1998-05-14 2001-08-28 Texas Instruments Incorporated Anti-reflective coatings for spatial light modulators
US6046659A (en) 1998-05-15 2000-04-04 Hughes Electronics Corporation Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications
US6323982B1 (en) 1998-05-22 2001-11-27 Texas Instruments Incorporated Yield superstructure for digital micromirror device
US6147790A (en) 1998-06-02 2000-11-14 Texas Instruments Incorporated Spring-ring micromechanical device
US6430332B1 (en) 1998-06-05 2002-08-06 Fiber, Llc Optical switching apparatus
US6496122B2 (en) 1998-06-26 2002-12-17 Sharp Laboratories Of America, Inc. Image display and remote control system capable of displaying two distinct images
US6077722A (en) 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6304297B1 (en) 1998-07-21 2001-10-16 Ati Technologies, Inc. Method and apparatus for manipulating display of update rate
US6700054B2 (en) 1998-07-27 2004-03-02 Sunbear Technologies, Llc Solar collector for solar energy systems
US5976902A (en) 1998-08-03 1999-11-02 Industrial Technology Research Institute Method of fabricating a fully self-aligned TFT-LCD
US5943155A (en) 1998-08-12 1999-08-24 Lucent Techonolgies Inc. Mars optical modulators
GB2341476A (en) 1998-09-03 2000-03-15 Sharp Kk Variable resolution display device
US6113239A (en) 1998-09-04 2000-09-05 Sharp Laboratories Of America, Inc. Projection display system for reflective light valves
US6249039B1 (en) 1998-09-10 2001-06-19 Bourns, Inc. Integrated inductive components and method of fabricating such components
JP4475813B2 (en) 1998-09-14 2010-06-09 エスビージー・ラボラトリーズ・インコーポレイテッド Holographic illumination device
JP4074714B2 (en) * 1998-09-25 2008-04-09 富士フイルム株式会社 Array type light modulation element and flat display driving method
US6229084B1 (en) 1998-09-28 2001-05-08 Sharp Kabushiki Kaisha Space solar cell
US6323834B1 (en) * 1998-10-08 2001-11-27 International Business Machines Corporation Micromechanical displays and fabrication method
JP3919954B2 (en) 1998-10-16 2007-05-30 富士フイルム株式会社 Array type light modulation element and flat display driving method
US6171945B1 (en) * 1998-10-22 2001-01-09 Applied Materials, Inc. CVD nanoporous silica low dielectric constant films
US6288824B1 (en) 1998-11-03 2001-09-11 Alex Kastalsky Display device based on grating electromechanical shutter
US6391675B1 (en) 1998-11-25 2002-05-21 Raytheon Company Method and apparatus for switching high frequency signals
JP3332879B2 (en) 1998-12-02 2002-10-07 キヤノン株式会社 Dichroic mirror
US6072686A (en) * 1998-12-11 2000-06-06 The Aerospace Corporation Micromachined rotating integrated switch
US6194323B1 (en) 1998-12-16 2001-02-27 Lucent Technologies Inc. Deep sub-micron metal etch with in-situ hard mask etch
US6335831B2 (en) * 1998-12-18 2002-01-01 Eastman Kodak Company Multilevel mechanical grating device
US6358021B1 (en) * 1998-12-29 2002-03-19 Honeywell International Inc. Electrostatic actuators for active surfaces
US6215221B1 (en) 1998-12-29 2001-04-10 Honeywell International Inc. Electrostatic/pneumatic actuators for active surfaces
US6188519B1 (en) 1999-01-05 2001-02-13 Kenneth Carlisle Johnson Bigrating light valve
US6597329B1 (en) 1999-01-08 2003-07-22 Intel Corporation Readable matrix addressable display system
US6537427B1 (en) 1999-02-04 2003-03-25 Micron Technology, Inc. Deposition of smooth aluminum films
US6242932B1 (en) * 1999-02-19 2001-06-05 Micron Technology, Inc. Interposer for semiconductor components having contact balls
JP3864204B2 (en) 1999-02-19 2006-12-27 株式会社日立プラズマパテントライセンシング Plasma display panel
US6606175B1 (en) 1999-03-16 2003-08-12 Sharp Laboratories Of America, Inc. Multi-segment light-emitting diode
JP3657143B2 (en) 1999-04-27 2005-06-08 シャープ株式会社 Solar cell and manufacturing method thereof
US6449084B1 (en) 1999-05-10 2002-09-10 Yanping Guo Optical deflector
US6323987B1 (en) 1999-05-14 2001-11-27 Agere Systems Optoelectronics Guardian Corp. Controlled multi-wavelength etalon
TW523727B (en) * 1999-05-27 2003-03-11 Koninkl Philips Electronics Nv Display device
US6274860B1 (en) 1999-05-28 2001-08-14 Terrasun, Llc Device for concentrating optical radiation
US6201633B1 (en) * 1999-06-07 2001-03-13 Xerox Corporation Micro-electromechanical based bistable color display sheets
US20070195392A1 (en) 1999-07-08 2007-08-23 Jds Uniphase Corporation Adhesive Chromagram And Method Of Forming Thereof
US6862029B1 (en) * 1999-07-27 2005-03-01 Hewlett-Packard Development Company, L.P. Color display system
US6331909B1 (en) * 1999-08-05 2001-12-18 Microvision, Inc. Frequency tunable resonant scanner
US6525310B2 (en) * 1999-08-05 2003-02-25 Microvision, Inc. Frequency tunable resonant scanner
US6507330B1 (en) * 1999-09-01 2003-01-14 Displaytech, Inc. DC-balanced and non-DC-balanced drive schemes for liquid crystal devices
WO2003007049A1 (en) 1999-10-05 2003-01-23 Iridigm Display Corporation Photonic mems and structures
US6741383B2 (en) 2000-08-11 2004-05-25 Reflectivity, Inc. Deflectable micromirrors with stopping mechanisms
US6549338B1 (en) * 1999-11-12 2003-04-15 Texas Instruments Incorporated Bandpass filter to reduce thermal impact of dichroic light shift
US6552840B2 (en) * 1999-12-03 2003-04-22 Texas Instruments Incorporated Electrostatic efficiency of micromechanical devices
US6674090B1 (en) * 1999-12-27 2004-01-06 Xerox Corporation Structure and method for planar lateral oxidation in active
US6548908B2 (en) * 1999-12-27 2003-04-15 Xerox Corporation Structure and method for planar lateral oxidation in passive devices
US6545335B1 (en) * 1999-12-27 2003-04-08 Xerox Corporation Structure and method for electrical isolation of optoelectronic integrated circuits
US6466358B2 (en) * 1999-12-30 2002-10-15 Texas Instruments Incorporated Analog pulse width modulation cell for digital micromechanical device
US6407851B1 (en) 2000-08-01 2002-06-18 Mohammed N. Islam Micromechanical optical switch
US7098884B2 (en) * 2000-02-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of driving semiconductor display device
GB2359636B (en) 2000-02-22 2002-05-01 Marconi Comm Ltd Wavelength selective optical filter
AU2001272094A1 (en) * 2000-03-01 2001-09-12 British Telecommunications Public Limited Company Data transfer method and apparatus
US6836366B1 (en) 2000-03-03 2004-12-28 Axsun Technologies, Inc. Integrated tunable fabry-perot filter and method of making same
US6356085B1 (en) * 2000-05-09 2002-03-12 Pacesetter, Inc. Method and apparatus for converting capacitance to voltage
US7008812B1 (en) 2000-05-30 2006-03-07 Ic Mechanics, Inc. Manufacture of MEMS structures in sealed cavity using dry-release MEMS device encapsulation
JP3843703B2 (en) * 2000-06-13 2006-11-08 富士ゼロックス株式会社 Optical writable recording and display device
US6466190B1 (en) 2000-06-19 2002-10-15 Koninklijke Philips Electronics N.V. Flexible color modulation tables of ratios for generating color modulation patterns
US6473274B1 (en) 2000-06-28 2002-10-29 Texas Instruments Incorporated Symmetrical microactuator structure for use in mass data storage devices, or the like
TW535024B (en) 2000-06-30 2003-06-01 Minolta Co Ltd Liquid display element and method of producing the same
CA2352729A1 (en) * 2000-07-13 2002-01-13 Creoscitex Corporation Ltd. Blazed micro-mechanical light modulator and array thereof
US6456420B1 (en) 2000-07-27 2002-09-24 Mcnc Microelectromechanical elevating structures
US6853129B1 (en) * 2000-07-28 2005-02-08 Candescent Technologies Corporation Protected substrate structure for a field emission display device
US6778155B2 (en) 2000-07-31 2004-08-17 Texas Instruments Incorporated Display operation with inserted block clears
US6867897B2 (en) 2003-01-29 2005-03-15 Reflectivity, Inc Micromirrors and off-diagonal hinge structures for micromirror arrays in projection displays
US6635919B1 (en) 2000-08-17 2003-10-21 Texas Instruments Incorporated High Q-large tuning range micro-electro mechanical system (MEMS) varactor for broadband applications
US6376787B1 (en) 2000-08-24 2002-04-23 Texas Instruments Incorporated Microelectromechanical switch with fixed metal electrode/dielectric interface with a protective cap layer
US6643069B2 (en) 2000-08-31 2003-11-04 Texas Instruments Incorporated SLM-base color projection display having multiple SLM's and multiple projection lenses
JP4304852B2 (en) * 2000-09-04 2009-07-29 コニカミノルタホールディングス株式会社 Non-flat liquid crystal display element and method for manufacturing the same
US6466354B1 (en) 2000-09-19 2002-10-15 Silicon Light Machines Method and apparatus for interferometric modulation of light
US6859218B1 (en) * 2000-11-07 2005-02-22 Hewlett-Packard Development Company, L.P. Electronic display devices and methods
US6433917B1 (en) 2000-11-22 2002-08-13 Ball Semiconductor, Inc. Light modulation device and system
US6647171B1 (en) 2000-12-01 2003-11-11 Corning Incorporated MEMS optical switch actuator
US6847752B2 (en) 2000-12-07 2005-01-25 Bluebird Optical Mems Ltd. Integrated actuator for optical switch mirror array
CA2430741A1 (en) * 2000-12-11 2002-06-20 Rad H. Dabbaj Electrostatic device
US6775174B2 (en) 2000-12-28 2004-08-10 Texas Instruments Incorporated Memory architecture for micromirror cell
US6625047B2 (en) 2000-12-31 2003-09-23 Texas Instruments Incorporated Micromechanical memory element
WO2002058089A1 (en) * 2001-01-19 2002-07-25 Massachusetts Institute Of Technology Bistable actuation techniques, mechanisms, and applications
WO2002061781A1 (en) * 2001-01-30 2002-08-08 Advantest Corporation Switch and integrated circuit device
US6912078B2 (en) 2001-03-16 2005-06-28 Corning Incorporated Electrostatically actuated micro-electro-mechanical devices and method of manufacture
WO2002080255A1 (en) 2001-03-16 2002-10-10 Corning Intellisense Corporation Electrostatically actuated micro-electro-mechanical devices and method of manufacture
JP2002277771A (en) 2001-03-21 2002-09-25 Ricoh Co Ltd Optical modulator
US6630786B2 (en) 2001-03-30 2003-10-07 Candescent Technologies Corporation Light-emitting device having light-reflective layer formed with, or/and adjacent to, material that enhances device performance
GB0108309D0 (en) 2001-04-03 2001-05-23 Koninkl Philips Electronics Nv Matrix array devices with flexible substrates
US20020149850A1 (en) 2001-04-17 2002-10-17 E-Tek Dynamics, Inc. Tunable optical filter
US6657832B2 (en) 2001-04-26 2003-12-02 Texas Instruments Incorporated Mechanically assisted restoring force support for micromachined membranes
US6465355B1 (en) 2001-04-27 2002-10-15 Hewlett-Packard Company Method of fabricating suspended microstructures
GB2375184A (en) 2001-05-02 2002-11-06 Marconi Caswell Ltd Wavelength selectable optical filter
FR2824643B1 (en) 2001-05-10 2003-10-31 Jean Pierre Lazzari LIGHT MODULATION DEVICE
US6598985B2 (en) 2001-06-11 2003-07-29 Nanogear Optical mirror system with multi-axis rotational control
US6822628B2 (en) 2001-06-28 2004-11-23 Candescent Intellectual Property Services, Inc. Methods and systems for compensating row-to-row brightness variations of a field emission display
EP1456699B1 (en) 2001-07-05 2008-12-31 International Business Machines Corporation Microsystem switches
JP3740444B2 (en) * 2001-07-11 2006-02-01 キヤノン株式会社 Optical deflector, optical equipment using the same, torsional oscillator
JP4032216B2 (en) * 2001-07-12 2008-01-16 ソニー株式会社 OPTICAL MULTILAYER STRUCTURE, ITS MANUFACTURING METHOD, OPTICAL SWITCHING DEVICE, AND IMAGE DISPLAY DEVICE
KR100452112B1 (en) * 2001-07-18 2004-10-12 한국과학기술원 Electrostatic Actuator
US6862022B2 (en) * 2001-07-20 2005-03-01 Hewlett-Packard Development Company, L.P. Method and system for automatically selecting a vertical refresh rate for a video display monitor
US6589625B1 (en) 2001-08-01 2003-07-08 Iridigm Display Corporation Hermetic seal and method to create the same
US6600201B2 (en) 2001-08-03 2003-07-29 Hewlett-Packard Development Company, L.P. Systems with high density packing of micromachines
US6632698B2 (en) 2001-08-07 2003-10-14 Hewlett-Packard Development Company, L.P. Microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in MEMS
WO2003020520A1 (en) 2001-08-28 2003-03-13 Mitsubishi Denki Kabushiki Kaisha Decoration member and method for producing the same
US20030053078A1 (en) 2001-09-17 2003-03-20 Mark Missey Microelectromechanical tunable fabry-perot wavelength monitor with thermal actuators
WO2003028059A1 (en) 2001-09-21 2003-04-03 Hrl Laboratories, Llc Mems switches and methods of making same
US6866669B2 (en) 2001-10-12 2005-03-15 Cordis Corporation Locking handle deployment mechanism for medical device and method
US6870581B2 (en) * 2001-10-30 2005-03-22 Sharp Laboratories Of America, Inc. Single panel color video projection display using reflective banded color falling-raster illumination
JP3893421B2 (en) 2001-12-27 2007-03-14 富士フイルム株式会社 Light modulation element, light modulation element array, and exposure apparatus using the same
US6959990B2 (en) 2001-12-31 2005-11-01 Texas Instruments Incorporated Prism for high contrast projection
US6791735B2 (en) * 2002-01-09 2004-09-14 The Regents Of The University Of California Differentially-driven MEMS spatial light modulator
US6608268B1 (en) 2002-02-05 2003-08-19 Memtronics, A Division Of Cogent Solutions, Inc. Proximity micro-electro-mechanical system
US6794119B2 (en) 2002-02-12 2004-09-21 Iridigm Display Corporation Method for fabricating a structure for a microelectromechanical systems (MEMS) device
KR100639547B1 (en) 2002-02-15 2006-10-30 가부시키가이샤 브리지스톤 Image display unit
US6643053B2 (en) 2002-02-20 2003-11-04 The Regents Of The University Of California Piecewise linear spatial phase modulator using dual-mode micromirror arrays for temporal and diffractive fourier optics
US6574033B1 (en) 2002-02-27 2003-06-03 Iridigm Display Corporation Microelectromechanical systems device and method for fabricating same
US6891658B2 (en) 2002-03-04 2005-05-10 The University Of British Columbia Wide viewing angle reflective display
US6965468B2 (en) * 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
JP4526823B2 (en) 2002-04-11 2010-08-18 エヌエックスピー ビー ヴィ Carrier, method of manufacturing carrier, and electronic apparatus
US6650456B2 (en) * 2002-04-11 2003-11-18 Triquint Technology Holding Co. Ultra-high frequency interconnection using micromachined substrates
US6972882B2 (en) 2002-04-30 2005-12-06 Hewlett-Packard Development Company, L.P. Micro-mirror device with light angle amplification
US20030202264A1 (en) 2002-04-30 2003-10-30 Weber Timothy L. Micro-mirror device
US6954297B2 (en) 2002-04-30 2005-10-11 Hewlett-Packard Development Company, L.P. Micro-mirror device including dielectrophoretic liquid
US20040212026A1 (en) 2002-05-07 2004-10-28 Hewlett-Packard Company MEMS device having time-varying control
JP3801099B2 (en) * 2002-06-04 2006-07-26 株式会社デンソー Tunable filter, manufacturing method thereof, and optical switching device using the same
DE10228946B4 (en) 2002-06-28 2004-08-26 Universität Bremen Optical modulator, display, use of an optical modulator and method for producing an optical modulator
US6741377B2 (en) 2002-07-02 2004-05-25 Iridigm Display Corporation Device having a light-absorbing mask and a method for fabricating same
US6822798B2 (en) * 2002-08-09 2004-11-23 Optron Systems, Inc. Tunable optical filter
US6674033B1 (en) * 2002-08-21 2004-01-06 Ming-Shan Wang Press button type safety switch
TW544787B (en) * 2002-09-18 2003-08-01 Promos Technologies Inc Method of forming self-aligned contact structure with locally etched gate conductive layer
JP4347654B2 (en) 2002-10-16 2009-10-21 オリンパス株式会社 Variable shape reflector and method of manufacturing the same
US6967986B2 (en) * 2002-10-16 2005-11-22 Eastman Kodak Company Light modulation apparatus using a VCSEL array with an electromechanical grating device
US6986587B2 (en) 2002-10-16 2006-01-17 Olympus Corporation Variable-shape reflection mirror and method of manufacturing the same
US7085121B2 (en) 2002-10-21 2006-08-01 Hrl Laboratories, Llc Variable capacitance membrane actuator for wide band tuning of microstrip resonators and filters
US6747785B2 (en) * 2002-10-24 2004-06-08 Hewlett-Packard Development Company, L.P. MEMS-actuated color light modulator and methods
FR2846318B1 (en) 2002-10-24 2005-01-07 Commissariat Energie Atomique INTEGRATED ELECTROMECHANICAL MICROSTRUCTURE HAVING MEANS FOR ADJUSTING THE PRESSURE IN A SEALED CAVITY AND A METHOD OF ADJUSTING THE PRESSURE
US6666561B1 (en) 2002-10-28 2003-12-23 Hewlett-Packard Development Company, L.P. Continuously variable analog micro-mirror device
US7370185B2 (en) 2003-04-30 2008-05-06 Hewlett-Packard Development Company, L.P. Self-packaged optical interference display device having anti-stiction bumps, integral micro-lens, and reflection-absorbing layers
US6909589B2 (en) 2002-11-20 2005-06-21 Corporation For National Research Initiatives MEMS-based variable capacitor
US6844959B2 (en) 2002-11-26 2005-01-18 Reflectivity, Inc Spatial light modulators with light absorbing areas
US6958846B2 (en) 2002-11-26 2005-10-25 Reflectivity, Inc Spatial light modulators with light absorbing areas
US6741503B1 (en) 2002-12-04 2004-05-25 Texas Instruments Incorporated SLM display data address mapping for four bank frame buffer
TWI289708B (en) * 2002-12-25 2007-11-11 Qualcomm Mems Technologies Inc Optical interference type color display
TW594155B (en) 2002-12-27 2004-06-21 Prime View Int Corp Ltd Optical interference type color display and optical interference modulator
TW559686B (en) 2002-12-27 2003-11-01 Prime View Int Co Ltd Optical interference type panel and the manufacturing method thereof
US6808953B2 (en) 2002-12-31 2004-10-26 Robert Bosch Gmbh Gap tuning for surface micromachined structures in an epitaxial reactor
US7002719B2 (en) 2003-01-15 2006-02-21 Lucent Technologies Inc. Mirror for an integrated device
US20040140557A1 (en) 2003-01-21 2004-07-22 United Test & Assembly Center Limited Wl-bga for MEMS/MOEMS devices
TW557395B (en) 2003-01-29 2003-10-11 Yen Sun Technology Corp Optical interference type reflection panel and the manufacturing method thereof
US7205675B2 (en) 2003-01-29 2007-04-17 Hewlett-Packard Development Company, L.P. Micro-fabricated device with thermoelectric device and method of making
US20040147056A1 (en) 2003-01-29 2004-07-29 Mckinnell James C. Micro-fabricated device and method of making
TW200413810A (en) 2003-01-29 2004-08-01 Prime View Int Co Ltd Light interference display panel and its manufacturing method
JP2004235465A (en) 2003-01-30 2004-08-19 Tokyo Electron Ltd Bonding method, bonding device and sealant
US6903487B2 (en) 2003-02-14 2005-06-07 Hewlett-Packard Development Company, L.P. Micro-mirror device with increased mirror tilt
TW200417806A (en) 2003-03-05 2004-09-16 Prime View Int Corp Ltd A structure of a light-incidence electrode of an optical interference display plate
US6844953B2 (en) 2003-03-12 2005-01-18 Hewlett-Packard Development Company, L.P. Micro-mirror device including dielectrophoretic liquid
TWI328805B (en) 2003-03-13 2010-08-11 Lg Electronics Inc Write-once recording medium and defective area management method and apparatus for write-once recording medium
KR100925195B1 (en) 2003-03-17 2009-11-06 엘지전자 주식회사 Method and apparatus of processing image data in an interactive disk player
JP2004286825A (en) 2003-03-19 2004-10-14 Fuji Photo Film Co Ltd Flat panel display device
TW594360B (en) 2003-04-21 2004-06-21 Prime View Int Corp Ltd A method for fabricating an interference display cell
TW567355B (en) 2003-04-21 2003-12-21 Prime View Int Co Ltd An interference display cell and fabrication method thereof
TWI224235B (en) 2003-04-21 2004-11-21 Prime View Int Co Ltd A method for fabricating an interference display cell
TWI226504B (en) 2003-04-21 2005-01-11 Prime View Int Co Ltd A structure of an interference display cell
US6829132B2 (en) * 2003-04-30 2004-12-07 Hewlett-Packard Development Company, L.P. Charge control of micro-electromechanical device
US7072093B2 (en) 2003-04-30 2006-07-04 Hewlett-Packard Development Company, L.P. Optical interference pixel display with charge control
US7400489B2 (en) 2003-04-30 2008-07-15 Hewlett-Packard Development Company, L.P. System and a method of driving a parallel-plate variable micro-electromechanical capacitor
US6853476B2 (en) 2003-04-30 2005-02-08 Hewlett-Packard Development Company, L.P. Charge control circuit for a micro-electromechanical device
US7358966B2 (en) 2003-04-30 2008-04-15 Hewlett-Packard Development Company L.P. Selective update of micro-electromechanical device
US6741384B1 (en) 2003-04-30 2004-05-25 Hewlett-Packard Development Company, L.P. Control of MEMS and light modulator arrays
US6819469B1 (en) 2003-05-05 2004-11-16 Igor M. Koba High-resolution spatial light modulator for 3-dimensional holographic display
US7218499B2 (en) 2003-05-14 2007-05-15 Hewlett-Packard Development Company, L.P. Charge control circuit
JP4338442B2 (en) 2003-05-23 2009-10-07 富士フイルム株式会社 Manufacturing method of transmissive light modulation element
TW591716B (en) 2003-05-26 2004-06-11 Prime View Int Co Ltd A structure of a structure release and manufacturing the same
TW570896B (en) * 2003-05-26 2004-01-11 Prime View Int Co Ltd A method for fabricating an interference display cell
US6917459B2 (en) 2003-06-03 2005-07-12 Hewlett-Packard Development Company, L.P. MEMS device and method of forming MEMS device
US6811267B1 (en) 2003-06-09 2004-11-02 Hewlett-Packard Development Company, L.P. Display system with nonvisible data projection
US7221495B2 (en) 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
FR2857153B1 (en) 2003-07-01 2005-08-26 Commissariat Energie Atomique BISTABLE MICRO-SWITCH WITH LOW CONSUMPTION.
US7190380B2 (en) * 2003-09-26 2007-03-13 Hewlett-Packard Development Company, L.P. Generating and displaying spatially offset sub-frames
US7173314B2 (en) * 2003-08-13 2007-02-06 Hewlett-Packard Development Company, L.P. Storage device having a probe and a storage cell with moveable parts
TW200506479A (en) * 2003-08-15 2005-02-16 Prime View Int Co Ltd Color changeable pixel for an interference display
TWI251712B (en) * 2003-08-15 2006-03-21 Prime View Int Corp Ltd Interference display plate
TWI305599B (en) * 2003-08-15 2009-01-21 Qualcomm Mems Technologies Inc Interference display panel and method thereof
TW593127B (en) * 2003-08-18 2004-06-21 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
TWI231865B (en) * 2003-08-26 2005-05-01 Prime View Int Co Ltd An interference display cell and fabrication method thereof
US20050057442A1 (en) * 2003-08-28 2005-03-17 Olan Way Adjacent display of sequential sub-images
TWI230801B (en) 2003-08-29 2005-04-11 Prime View Int Co Ltd Reflective display unit using interferometric modulation and manufacturing method thereof
TWI232333B (en) * 2003-09-03 2005-05-11 Prime View Int Co Ltd Display unit using interferometric modulation and manufacturing method thereof
US6982820B2 (en) * 2003-09-26 2006-01-03 Prime View International Co., Ltd. Color changeable pixel
TW593126B (en) 2003-09-30 2004-06-21 Prime View Int Co Ltd A structure of a micro electro mechanical system and manufacturing the same
US20050068583A1 (en) * 2003-09-30 2005-03-31 Gutkowski Lawrence J. Organizing a digital image
US6861277B1 (en) * 2003-10-02 2005-03-01 Hewlett-Packard Development Company, L.P. Method of forming MEMS device
US7430355B2 (en) * 2003-12-08 2008-09-30 University Of Cincinnati Light emissive signage devices based on lightwave coupling
US7161728B2 (en) * 2003-12-09 2007-01-09 Idc, Llc Area array modulation and lead reduction in interferometric modulators
TWI235345B (en) 2004-01-20 2005-07-01 Prime View Int Co Ltd A structure of an optical interference display unit
US7342705B2 (en) 2004-02-03 2008-03-11 Idc, Llc Spatial light modulator with integrated optical compensation structure
TWI256941B (en) 2004-02-18 2006-06-21 Qualcomm Mems Technologies Inc A micro electro mechanical system display cell and method for fabricating thereof
US7119945B2 (en) 2004-03-03 2006-10-10 Idc, Llc Altering temporal response of microelectromechanical elements
TW200530669A (en) 2004-03-05 2005-09-16 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
US7855824B2 (en) 2004-03-06 2010-12-21 Qualcomm Mems Technologies, Inc. Method and system for color optimization in a display
TWI261683B (en) 2004-03-10 2006-09-11 Qualcomm Mems Technologies Inc Interference reflective element and repairing method thereof
US7476327B2 (en) 2004-05-04 2009-01-13 Idc, Llc Method of manufacture for microelectromechanical devices
US6970031B1 (en) * 2004-05-28 2005-11-29 Hewlett-Packard Development Company, L.P. Method and apparatus for reducing charge injection in control of MEMS electrostatic actuator array
US7075700B2 (en) 2004-06-25 2006-07-11 The Boeing Company Mirror actuator position sensor systems and methods
TWI233916B (en) * 2004-07-09 2005-06-11 Prime View Int Co Ltd A structure of a micro electro mechanical system
KR101313117B1 (en) * 2004-07-29 2013-09-30 퀄컴 엠이엠에스 테크놀로지스, 인크. System and method for micro-electromechanical operating of an interferometric modulator
US20060044291A1 (en) 2004-08-25 2006-03-02 Willis Thomas E Segmenting a waveform that drives a display
DK1632804T3 (en) 2004-09-01 2008-09-29 Barco Nv prism assembly
US7321456B2 (en) 2004-09-27 2008-01-22 Idc, Llc Method and device for corner interferometric modulation
US7911428B2 (en) 2004-09-27 2011-03-22 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7630123B2 (en) 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Method and device for compensating for color shift as a function of angle of view
US20060176487A1 (en) 2004-09-27 2006-08-10 William Cummings Process control monitors for interferometric modulators
US7807488B2 (en) 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. Display element having filter material diffused in a substrate of the display element
US7710636B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. Systems and methods using interferometric optical modulators and diffusers
US7345805B2 (en) * 2004-09-27 2008-03-18 Idc, Llc Interferometric modulator array with integrated MEMS electrical switches
US7349141B2 (en) 2004-09-27 2008-03-25 Idc, Llc Method and post structures for interferometric modulation
US7369294B2 (en) 2004-09-27 2008-05-06 Idc, Llc Ornamental display device
US7893919B2 (en) 2004-09-27 2011-02-22 Qualcomm Mems Technologies, Inc. Display region architectures
US8004504B2 (en) 2004-09-27 2011-08-23 Qualcomm Mems Technologies, Inc. Reduced capacitance display element
US7527995B2 (en) 2004-09-27 2009-05-05 Qualcomm Mems Technologies, Inc. Method of making prestructure for MEMS systems
US7554714B2 (en) 2004-09-27 2009-06-30 Idc, Llc Device and method for manipulation of thermal response in a modulator
US7630119B2 (en) 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7130104B2 (en) 2004-09-27 2006-10-31 Idc, Llc Methods and devices for inhibiting tilting of a mirror in an interferometric modulator
US7561323B2 (en) 2004-09-27 2009-07-14 Idc, Llc Optical films for directing light towards active areas of displays
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US7936497B2 (en) 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. MEMS device having deformable membrane characterized by mechanical persistence
US7710632B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. Display device having an array of spatial light modulators with integrated color filters
US8031133B2 (en) * 2004-09-27 2011-10-04 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7302157B2 (en) 2004-09-27 2007-11-27 Idc, Llc System and method for multi-level brightness in interferometric modulation
US7420725B2 (en) 2004-09-27 2008-09-02 Idc, Llc Device having a conductive light absorbing mask and method for fabricating same
US7327510B2 (en) * 2004-09-27 2008-02-05 Idc, Llc Process for modifying offset voltage characteristics of an interferometric modulator
US20060066557A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and device for reflective display with time sequential color illumination
US7586484B2 (en) 2004-09-27 2009-09-08 Idc, Llc Controller and driver features for bi-stable display
US7564612B2 (en) 2004-09-27 2009-07-21 Idc, Llc Photonic MEMS and structures
US7304784B2 (en) 2004-09-27 2007-12-04 Idc, Llc Reflective display device having viewable display on both sides
US7184202B2 (en) 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
US7508571B2 (en) 2004-09-27 2009-03-24 Idc, Llc Optical films for controlling angular characteristics of displays
US7372613B2 (en) 2004-09-27 2008-05-13 Idc, Llc Method and device for multistate interferometric light modulation
US7750886B2 (en) 2004-09-27 2010-07-06 Qualcomm Mems Technologies, Inc. Methods and devices for lighting displays
US7417735B2 (en) 2004-09-27 2008-08-26 Idc, Llc Systems and methods for measuring color and contrast in specular reflective devices
US7898521B2 (en) 2004-09-27 2011-03-01 Qualcomm Mems Technologies, Inc. Device and method for wavelength filtering
US7289259B2 (en) 2004-09-27 2007-10-30 Idc, Llc Conductive bus structure for interferometric modulator array
US7719500B2 (en) 2004-09-27 2010-05-18 Qualcomm Mems Technologies, Inc. Reflective display pixels arranged in non-rectangular arrays
US7603001B2 (en) 2006-02-17 2009-10-13 Qualcomm Mems Technologies, Inc. Method and apparatus for providing back-lighting in an interferometric modulator display device
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7643203B2 (en) 2006-04-10 2010-01-05 Qualcomm Mems Technologies, Inc. Interferometric optical display system with broadband characteristics
US8004743B2 (en) 2006-04-21 2011-08-23 Qualcomm Mems Technologies, Inc. Method and apparatus for providing brightness control in an interferometric modulator (IMOD) display
US7595926B2 (en) 2007-07-05 2009-09-29 Qualcomm Mems Technologies, Inc. Integrated IMODS and solar cells on a substrate
US8072402B2 (en) 2007-08-29 2011-12-06 Qualcomm Mems Technologies, Inc. Interferometric optical modulator with broadband reflection characteristics
US20090078316A1 (en) 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
US7481197B1 (en) * 2007-10-03 2009-01-27 Industrial Technology Research Institute Lubrication device of four-stroke engines
EP2212926A2 (en) 2007-10-19 2010-08-04 QUALCOMM MEMS Technologies, Inc. Display with integrated photovoltaics
US8058549B2 (en) 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
US20090293955A1 (en) 2007-11-07 2009-12-03 Qualcomm Incorporated Photovoltaics with interferometric masks
EP2232569A2 (en) 2007-12-17 2010-09-29 QUALCOMM MEMS Technologies, Inc. Photovoltaics with interferometric back side masks
EP2225779A2 (en) 2007-12-21 2010-09-08 QUALCOMM MEMS Technologies, Inc. Multijunction photovoltaic cells
US7898723B2 (en) 2008-04-02 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical systems display element with photovoltaic structure
US20100096011A1 (en) 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. High efficiency interferometric color filters for photovoltaic modules
WO2010044901A1 (en) 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. Monolithic imod color enhanced photovoltaic cell

Patent Citations (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2534846A (en) * 1946-06-20 1950-12-19 Emi Ltd Color filter
US3439973A (en) * 1963-06-28 1969-04-22 Siemens Ag Polarizing reflector for electromagnetic wave radiation in the micron wavelength
US3443854A (en) * 1963-06-28 1969-05-13 Siemens Ag Dipole device for electromagnetic wave radiation in micron wavelength ranges
US3656836A (en) * 1968-07-05 1972-04-18 Thomson Csf Light modulator
US3653741A (en) * 1970-02-16 1972-04-04 Alvin M Marks Electro-optical dipolar material
US3813265A (en) * 1970-02-16 1974-05-28 A Marks Electro-optical dipolar material
US3725868A (en) * 1970-10-19 1973-04-03 Burroughs Corp Small reconfigurable processor for a variety of data processing applications
US3955880A (en) * 1973-07-20 1976-05-11 Organisation Europeenne De Recherches Spatiales Infrared radiation modulator
US4099854A (en) * 1976-10-12 1978-07-11 The Unites States Of America As Represented By The Secretary Of The Navy Optical notch filter utilizing electric dipole resonance absorption
US4196396A (en) * 1976-10-15 1980-04-01 Bell Telephone Laboratories, Incorporated Interferometer apparatus using electro-optic material with feedback
US4389096A (en) * 1977-12-27 1983-06-21 Matsushita Electric Industrial Co., Ltd. Image display apparatus of liquid crystal valve projection type
US4663083A (en) * 1978-05-26 1987-05-05 Marks Alvin M Electro-optical dipole suspension with reflective-absorptive-transmissive characteristics
US4228437A (en) * 1979-06-26 1980-10-14 The United States Of America As Represented By The Secretary Of The Navy Wideband polarization-transforming electromagnetic mirror
US4403248A (en) * 1980-03-04 1983-09-06 U.S. Philips Corporation Display device with deformable reflective medium
US4459182A (en) * 1980-03-04 1984-07-10 U.S. Philips Corporation Method of manufacturing a display device
US4377324A (en) * 1980-08-04 1983-03-22 Honeywell Inc. Graded index Fabry-Perot optical filter device
US4531126A (en) * 1981-05-18 1985-07-23 Societe D'etude Du Radant Method and device for analyzing a very high frequency radiation beam of electromagnetic waves
US4681403A (en) * 1981-07-16 1987-07-21 U.S. Philips Corporation Display device with micromechanical leaf spring switches
US4445050A (en) * 1981-12-15 1984-04-24 Marks Alvin M Device for conversion of light power to electric power
US4519676A (en) * 1982-02-01 1985-05-28 U.S. Philips Corporation Passive display device
US5633652A (en) * 1984-02-17 1997-05-27 Canon Kabushiki Kaisha Method for driving optical modulation device
US5172262A (en) * 1985-10-30 1992-12-15 Texas Instruments Incorporated Spatial light modulator and method
US5835255A (en) * 1986-04-23 1998-11-10 Etalon, Inc. Visible spectrum modulator arrays
US4790635A (en) * 1986-04-25 1988-12-13 The Secretary Of State For Defence In Her Brittanic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Electro-optical device
US4748366A (en) * 1986-09-02 1988-05-31 Taylor George W Novel uses of piezoelectric materials for creating optical effects
US4786128A (en) * 1986-12-02 1988-11-22 Quantum Diagnostics, Ltd. Device for modulating and reflecting electromagnetic radiation employing electro-optic layer having a variable index of refraction
US4937496A (en) * 1987-05-16 1990-06-26 W. C. Heraeus Gmbh Xenon short arc discharge lamp
US4982184A (en) * 1989-01-03 1991-01-01 General Electric Company Electrocrystallochromic display and element
US4900395A (en) * 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US5022745A (en) * 1989-09-07 1991-06-11 Massachusetts Institute Of Technology Electrostatically deformable single crystal dielectrically coated mirror
US4954789A (en) * 1989-09-28 1990-09-04 Texas Instruments Incorporated Spatial light modulator
US5124834A (en) * 1989-11-16 1992-06-23 General Electric Company Transferrable, self-supporting pellicle for elastomer light valve displays and method for making the same
US5500635A (en) * 1990-02-20 1996-03-19 Mott; Jonathan C. Products incorporating piezoelectric material
US5078479A (en) * 1990-04-20 1992-01-07 Centre Suisse D'electronique Et De Microtechnique Sa Light modulation device with matrix addressing
US5075796A (en) * 1990-05-31 1991-12-24 Eastman Kodak Company Optical article for multicolor imaging
US5153771A (en) * 1990-07-18 1992-10-06 Northrop Corporation Coherent light modulation and detector
US5044736A (en) * 1990-11-06 1991-09-03 Motorola, Inc. Configurable optical filter or display
US5959763A (en) * 1991-03-06 1999-09-28 Massachusetts Institute Of Technology Spatial light modulator
US5233459A (en) * 1991-03-06 1993-08-03 Massachusetts Institute Of Technology Electric display device
US5136669A (en) * 1991-03-15 1992-08-04 Sperry Marine Inc. Variable ratio fiber optic coupler optical signal processing element
US5142414A (en) * 1991-04-22 1992-08-25 Koehler Dale R Electrically actuatable temporal tristimulus-color device
US5168406A (en) * 1991-07-31 1992-12-01 Texas Instruments Incorporated Color deformable mirror device and method for manufacture
US5358601A (en) * 1991-09-24 1994-10-25 Micron Technology, Inc. Process for isotropically etching semiconductor devices
US5381253A (en) * 1991-11-14 1995-01-10 Board Of Regents Of University Of Colorado Chiral smectic liquid crystal optical modulators having variable retardation
US5228013A (en) * 1992-01-10 1993-07-13 Bik Russell J Clock-painting device and method for indicating the time-of-day with a non-traditional, now analog artistic panel of digital electronic visual displays
US5231532A (en) * 1992-02-05 1993-07-27 Texas Instruments Incorporated Switchable resonant filter for optical radiation
US5212582A (en) * 1992-03-04 1993-05-18 Texas Instruments Incorporated Electrostatically controlled beam steering device and method
US5401983A (en) * 1992-04-08 1995-03-28 Georgia Tech Research Corporation Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices
US5311360A (en) * 1992-04-28 1994-05-10 The Board Of Trustees Of The Leland Stanford, Junior University Method and apparatus for modulating a light beam
US5459610A (en) * 1992-04-28 1995-10-17 The Board Of Trustees Of The Leland Stanford, Junior University Deformable grating apparatus for modulating a light beam and including means for obviating stiction between grating elements and underlying substrate
US5381232A (en) * 1992-05-19 1995-01-10 Akzo Nobel N.V. Fabry-perot with device mirrors including a dielectric coating outside the resonant cavity
US5638084A (en) * 1992-05-22 1997-06-10 Dielectric Systems International, Inc. Lighting-independent color video display
US5345328A (en) * 1992-08-12 1994-09-06 Sandia Corporation Tandem resonator reflectance modulator
US5293272A (en) * 1992-08-24 1994-03-08 Physical Optics Corporation High finesse holographic fabry-perot etalon and method of fabricating
US5326430A (en) * 1992-09-24 1994-07-05 International Business Machines Corporation Cooling microfan arrangements and process
US5986796A (en) * 1993-03-17 1999-11-16 Etalon Inc. Visible spectrum modulator arrays
US5683591A (en) * 1993-05-25 1997-11-04 Robert Bosch Gmbh Process for producing surface micromechanical structures
US6100872A (en) * 1993-05-25 2000-08-08 Canon Kabushiki Kaisha Display control method and apparatus
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
US5673139A (en) * 1993-07-19 1997-09-30 Medcom, Inc. Microelectromechanical television scanning device and method for making the same
US5552925A (en) * 1993-09-07 1996-09-03 John M. Baker Electro-micro-mechanical shutters on transparent substrates
US5579149A (en) * 1993-09-13 1996-11-26 Csem Centre Suisse D'electronique Et De Microtechnique Sa Miniature network of light obturators
US5629790A (en) * 1993-10-18 1997-05-13 Neukermans; Armand P. Micromachined torsional scanner
US5500761A (en) * 1994-01-27 1996-03-19 At&T Corp. Micromechanical modulator
US5526327A (en) * 1994-03-15 1996-06-11 Cordova, Jr.; David J. Spatial displacement time display
US6040937A (en) * 1994-05-05 2000-03-21 Etalon, Inc. Interferometric modulation
US6055090A (en) * 1994-05-05 2000-04-25 Etalon, Inc. Interferometric modulation
US5497172A (en) * 1994-06-13 1996-03-05 Texas Instruments Incorporated Pulse width modulation for spatial light modulator with split reset addressing
US5636052A (en) * 1994-07-29 1997-06-03 Lucent Technologies Inc. Direct view display based on a micromechanical modulation
US5703710A (en) * 1994-09-09 1997-12-30 Deacon Research Method for manipulating optical energy using poled structure
US5619059A (en) * 1994-09-28 1997-04-08 National Research Council Of Canada Color deformable mirror device having optical thin film interference color coatings
US6243149B1 (en) * 1994-10-27 2001-06-05 Massachusetts Institute Of Technology Method of imaging using a liquid crystal display device
US5726480A (en) * 1995-01-27 1998-03-10 The Regents Of The University Of California Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
US5636185A (en) * 1995-03-10 1997-06-03 Boit Incorporated Dynamically changing liquid crystal display timekeeping apparatus
US5784190A (en) * 1995-04-27 1998-07-21 John M. Baker Electro-micro-mechanical shutters on transparent substrates
US5641391A (en) * 1995-05-15 1997-06-24 Hunter; Ian W. Three dimensional microfabrication by localized electrodeposition and etching
US5739945A (en) * 1995-09-29 1998-04-14 Tayebati; Parviz Electrically tunable optical filter utilizing a deformable multi-layer mirror
US5638946A (en) * 1996-01-11 1997-06-17 Northeastern University Micromechanical switch with insulated switch contact
US5710656A (en) * 1996-07-30 1998-01-20 Lucent Technologies Inc. Micromechanical optical modulator having a reduced-mass composite membrane
US5793504A (en) * 1996-08-07 1998-08-11 Northrop Grumman Corporation Hybrid angular/spatial holographic multiplexer
US5808780A (en) * 1997-06-09 1998-09-15 Texas Instruments Incorporated Non-contacting micromechanical optical switch
US5943158A (en) * 1998-05-05 1999-08-24 Lucent Technologies Inc. Micro-mechanical, anti-reflection, switched optical modulator array and fabrication method

Cited By (558)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8014059B2 (en) 1994-05-05 2011-09-06 Qualcomm Mems Technologies, Inc. System and method for charge control in a MEMS device
US20060028708A1 (en) * 1994-05-05 2006-02-09 Miles Mark W Method and device for modulating light
US20070058095A1 (en) * 1994-05-05 2007-03-15 Miles Mark W System and method for charge control in a MEMS device
US20050244949A1 (en) * 1994-05-05 2005-11-03 Miles Mark W Method and device for modulating light
US20070253054A1 (en) * 1994-05-05 2007-11-01 Miles Mark W Display devices comprising of interferometric modulator and sensor
US20040240032A1 (en) * 1994-05-05 2004-12-02 Miles Mark W. Interferometric modulation of radiation
US8059326B2 (en) 1994-05-05 2011-11-15 Qualcomm Mems Technologies Inc. Display devices comprising of interferometric modulator and sensor
US20050002082A1 (en) * 1994-05-05 2005-01-06 Miles Mark W. Interferometric modulation of radiation
US20050231790A1 (en) * 1994-05-05 2005-10-20 Miles Mark W Method and device for modulating light with a time-varying signal
US20020075555A1 (en) * 1994-05-05 2002-06-20 Iridigm Display Corporation Interferometric modulation of radiation
US7692844B2 (en) 1994-05-05 2010-04-06 Qualcomm Mems Technologies, Inc. Interferometric modulation of radiation
US20020126364A1 (en) * 1994-05-05 2002-09-12 Iridigm Display Corporation, A Delaware Corporation Interferometric modulation of radiation
US20060274074A1 (en) * 1994-05-05 2006-12-07 Miles Mark W Display device having a movable structure for modulating light and method thereof
US20050286113A1 (en) * 1995-05-01 2005-12-29 Miles Mark W Photonic MEMS and structures
US20060033975A1 (en) * 1995-05-01 2006-02-16 Miles Mark W Photonic MEMS and structures
US20050286114A1 (en) * 1996-12-19 2005-12-29 Miles Mark W Interferometric modulation of radiation
US20060262380A1 (en) * 1998-04-08 2006-11-23 Idc, Llc A Delaware Limited Liability Company MEMS devices with stiction bumps
US20050163365A1 (en) * 1999-07-22 2005-07-28 Barbour Blair A. Apparatus and method of information extraction from electromagnetic energy based upon multi-characteristic spatial geometry processing
US20060250337A1 (en) * 1999-10-05 2006-11-09 Miles Mark W Photonic MEMS and structures
US7830586B2 (en) 1999-10-05 2010-11-09 Qualcomm Mems Technologies, Inc. Transparent thin films
USRE40436E1 (en) * 2001-08-01 2008-07-15 Idc, Llc Hermetic seal and method to create the same
US20050142684A1 (en) * 2002-02-12 2005-06-30 Miles Mark W. Method for fabricating a structure for a microelectromechanical system (MEMS) device
US20080026328A1 (en) * 2002-02-12 2008-01-31 Idc, Llc Method for fabricating a structure for a microelectromechanical systems (mems) device
US7227540B2 (en) * 2002-04-25 2007-06-05 Fujifilm Corporation Image display unit and method of manufacturing the same
US20030218603A1 (en) * 2002-04-25 2003-11-27 Fuji Photo Film Co., Ltd. Image display unit and method of manufacturing the same
US20050250235A1 (en) * 2002-09-20 2005-11-10 Miles Mark W Controlling electromechanical behavior of structures within a microelectromechanical systems device
US7781850B2 (en) 2002-09-20 2010-08-24 Qualcomm Mems Technologies, Inc. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US20040058532A1 (en) * 2002-09-20 2004-03-25 Miles Mark W. Controlling electromechanical behavior of structures within a microelectromechanical systems device
US20040209192A1 (en) * 2003-04-21 2004-10-21 Prime View International Co., Ltd. Method for fabricating an interference display unit
US7447891B2 (en) 2003-04-30 2008-11-04 Hewlett-Packard Development Company, L.P. Light modulator with concentric control-electrode structure
US20060017689A1 (en) * 2003-04-30 2006-01-26 Faase Kenneth J Light modulator with concentric control-electrode structure
US7706044B2 (en) 2003-05-26 2010-04-27 Qualcomm Mems Technologies, Inc. Optical interference display cell and method of making the same
US20040263944A1 (en) * 2003-06-24 2004-12-30 Miles Mark W. Thin film precursor stack for MEMS manufacturing
US7470373B2 (en) 2003-08-15 2008-12-30 Qualcomm Mems Technologies, Inc. Optical interference display panel
US20050036095A1 (en) * 2003-08-15 2005-02-17 Jia-Jiun Yeh Color-changeable pixels of an optical interference display panel
US7307776B2 (en) 2003-08-15 2007-12-11 Qualcomm Incorporated Optical interference display panel
US7978396B2 (en) 2003-08-15 2011-07-12 Qualcomm Mems Technologies, Inc. Optical interference display panel
US20060148365A1 (en) * 2003-08-15 2006-07-06 Hsiung-Kuang Tsai Optical interference display panel
US20090103167A1 (en) * 2003-08-15 2009-04-23 Qualcomm Mems Technologies, Inc. Optical interference display panel
US20050035699A1 (en) * 2003-08-15 2005-02-17 Hsiung-Kuang Tsai Optical interference display panel
US7532385B2 (en) 2003-08-18 2009-05-12 Qualcomm Mems Technologies, Inc. Optical interference display panel and manufacturing method thereof
US8004736B2 (en) 2003-08-18 2011-08-23 Qualcomm Mems Technologies, Inc. Optical interference display panel and manufacturing method thereof
US20090219605A1 (en) * 2003-08-18 2009-09-03 Qualcomm Mems Technologies, Inc Optical interference display panel and manufacturing method thereof
US20050046948A1 (en) * 2003-08-26 2005-03-03 Wen-Jian Lin Interference display cell and fabrication method thereof
US20060006138A1 (en) * 2003-08-26 2006-01-12 Wen-Jian Lin Interference display cell and fabrication method thereof
US20050046922A1 (en) * 2003-09-03 2005-03-03 Wen-Jian Lin Interferometric modulation pixels and manufacturing method thereof
US20050105849A1 (en) * 2003-11-13 2005-05-19 Kim Chang K. Thermally actuated wavelength tunable optical filter
US7116863B2 (en) * 2003-11-13 2006-10-03 Electronics And Telecommunications Research Institute Thermally actuated wavelength tunable optical filter
US20050231791A1 (en) * 2003-12-09 2005-10-20 Sampsell Jeffrey B Area array modulation and lead reduction in interferometric modulators
US20070035804A1 (en) * 2003-12-09 2007-02-15 Clarence Chui System and method for addressing a MEMS display
US20070035805A1 (en) * 2003-12-09 2007-02-15 Clarence Chui System and method for addressing a MEMS display
US20050168431A1 (en) * 2004-02-03 2005-08-04 Clarence Chui Driver voltage adjuster
KR101258484B1 (en) 2004-02-03 2013-04-26 퀄컴 엠이엠에스 테크놀로지스, 인크. Spatial light modulator with integrated optical structure
US8045252B2 (en) 2004-02-03 2011-10-25 Qualcomm Mems Technologies, Inc. Spatial light modulator with integrated optical compensation structure
KR101150246B1 (en) 2004-02-03 2012-06-12 퀄컴 엠이엠에스 테크놀로지스, 인크. Spatial light modulator with integrated optical structure
US20050195467A1 (en) * 2004-03-03 2005-09-08 Manish Kothari Altering temporal response of microelectromechanical elements
US20050195468A1 (en) * 2004-03-05 2005-09-08 Sampsell Jeffrey B. Integrated modulator illumination
US20120206788A1 (en) * 2004-03-05 2012-08-16 Qualcomm Mems Technologies, Inc. Integrated modulator illumination
EP2261720A1 (en) * 2004-03-05 2010-12-15 Qualcomm Mems Technologies, Inc. Integrated modular illumination
US20110122479A1 (en) * 2004-03-05 2011-05-26 Qualcomm Mems Technologies, Inc. Integrated modulator illumination
US7706050B2 (en) * 2004-03-05 2010-04-27 Qualcomm Mems Technologies, Inc. Integrated modulator illumination
WO2005093490A1 (en) 2004-03-05 2005-10-06 Idc, Llc Integrated modulator illumination
US8169689B2 (en) 2004-03-05 2012-05-01 Qualcomm Mems Technologies, Inc. Integrated modulator illumination
US20060198013A1 (en) * 2004-03-05 2006-09-07 Sampsell Jeffrey B Integrated modulator illumination
US7880954B2 (en) * 2004-03-05 2011-02-01 Qualcomm Mems Technologies, Inc. Integrated modulator illumination
US20060219435A1 (en) * 2004-05-04 2006-10-05 Manish Kothari Modifying the electro-mechanical behavior of devices
US20050249966A1 (en) * 2004-05-04 2005-11-10 Ming-Hau Tung Method of manufacture for microelectromechanical devices
US7704772B2 (en) 2004-05-04 2010-04-27 Qualcomm Mems Technologies, Inc. Method of manufacture for microelectromechanical devices
US20050247477A1 (en) * 2004-05-04 2005-11-10 Manish Kothari Modifying the electro-mechanical behavior of devices
US8853747B2 (en) 2004-05-12 2014-10-07 Qualcomm Mems Technologies, Inc. Method of making an electronic device with a curved backplate
US20110053304A1 (en) * 2004-05-12 2011-03-03 Qualcomm Mems Technologies, Inc. Method of making an electronic device with a curved backplate
US20050254115A1 (en) * 2004-05-12 2005-11-17 Iridigm Display Corporation Packaging for an interferometric modulator
US20060001942A1 (en) * 2004-07-02 2006-01-05 Clarence Chui Interferometric modulators with thin film transistors
US20060007517A1 (en) * 2004-07-09 2006-01-12 Prime View International Co., Ltd. Structure of a micro electro mechanical system
US20060024880A1 (en) * 2004-07-29 2006-02-02 Clarence Chui System and method for micro-electromechanical operation of an interferometric modulator
US20070024550A1 (en) * 2004-08-27 2007-02-01 Clarence Chui Drive method for MEMS devices
TWI416474B (en) * 2004-08-27 2013-11-21 Qualcomm Mems Technologies Inc Staggered column drive circuit and methods, display and device for display
US20060044298A1 (en) * 2004-08-27 2006-03-02 Marc Mignard System and method of sensing actuation and release voltages of an interferometric modulator
US20060044928A1 (en) * 2004-08-27 2006-03-02 Clarence Chui Drive method for MEMS devices
US20060044246A1 (en) * 2004-08-27 2006-03-02 Marc Mignard Staggered column drive circuit systems and methods
US20060056000A1 (en) * 2004-08-27 2006-03-16 Marc Mignard Current mode display driver circuit realization feature
US20060057754A1 (en) * 2004-08-27 2006-03-16 Cummings William J Systems and methods of actuating MEMS display elements
US7928940B2 (en) 2004-08-27 2011-04-19 Qualcomm Mems Technologies, Inc. Drive method for MEMS devices
US7889163B2 (en) 2004-08-27 2011-02-15 Qualcomm Mems Technologies, Inc. Drive method for MEMS devices
US20060067644A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of fabricating interferometric devices using lift-off processing techniques
US8035883B2 (en) 2004-09-27 2011-10-11 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US20060077510A1 (en) * 2004-09-27 2006-04-13 Clarence Chui System and method of illuminating interferometric modulators using backlighting
US20060077381A1 (en) * 2004-09-27 2006-04-13 William Cummings Process control monitors for interferometric modulators
US20060077521A1 (en) * 2004-09-27 2006-04-13 Gally Brian J System and method of implementation of interferometric modulators for display mirrors
US20060077503A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer System and method of providing MEMS device with anti-stiction coating
US20060077617A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Selectable capacitance circuit
US20060077507A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Conductive bus structure for interferometric modulator array
US20060077147A1 (en) * 2004-09-27 2006-04-13 Lauren Palmateer System and method for protecting micro-structure of display array using spacers in gap within display device
US20060077156A1 (en) * 2004-09-27 2006-04-13 Clarence Chui MEMS device having deformable membrane characterized by mechanical persistence
US20060077393A1 (en) * 2004-09-27 2006-04-13 Gally Brian J System and method for implementation of interferometric modulator displays
US20060077125A1 (en) * 2004-09-27 2006-04-13 Idc, Llc. A Delaware Limited Liability Company Method and device for generating white in an interferometric modulator display
US20060077149A1 (en) * 2004-09-27 2006-04-13 Gally Brian J Method and device for manipulating color in a display
US20060079098A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Method and system for sealing a substrate
US20060077152A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Device and method for manipulation of thermal response in a modulator
US20060077502A1 (en) * 2004-09-27 2006-04-13 Ming-Hau Tung Methods of fabricating interferometric modulators by selectively removing a material
US20060077154A1 (en) * 2004-09-27 2006-04-13 Gally Brian J Optical films for directing light towards active areas of displays
US20060077126A1 (en) * 2004-09-27 2006-04-13 Manish Kothari Apparatus and method for arranging devices into an interconnected array
US20060076637A1 (en) * 2004-09-27 2006-04-13 Gally Brian J Method and system for packaging a display
US20060077515A1 (en) * 2004-09-27 2006-04-13 Cummings William J Method and device for corner interferometric modulation
US20060077145A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Device having patterned spacers for backplates and method of making the same
US20060077505A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Device and method for display memory using manipulation of mechanical response
US20060077150A1 (en) * 2004-09-27 2006-04-13 Sampsell Jeffrey B System and method of providing a regenerating protective coating in a MEMS device
US20060079048A1 (en) * 2004-09-27 2006-04-13 Sampsell Jeffrey B Method of making prestructure for MEMS systems
US20060077518A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Mirror and mirror layer for optical modulator and method
US20060077504A1 (en) * 2004-09-27 2006-04-13 Floyd Philip D Method and device for protecting interferometric modulators from electrostatic discharge
US20060077155A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Reflective display device having viewable display on both sides
US20060077153A1 (en) * 2004-09-27 2006-04-13 Idc, Llc, A Delaware Limited Liability Company Reduced capacitance display element
US20060077527A1 (en) * 2004-09-27 2006-04-13 Cummings William J Methods and devices for inhibiting tilting of a mirror in an interferometric modulator
US20060077508A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method and device for multistate interferometric light modulation
US20060077529A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method of fabricating a free-standing microstructure
US20060077516A1 (en) * 2004-09-27 2006-04-13 Manish Kothari Device having a conductive light absorbing mask and method for fabricating same
US20060077151A1 (en) * 2004-09-27 2006-04-13 Clarence Chui Method and device for a display having transparent components integrated therein
US20060076311A1 (en) * 2004-09-27 2006-04-13 Ming-Hau Tung Methods of fabricating interferometric modulators by selectively removing a material
US20060077533A1 (en) * 2004-09-27 2006-04-13 Miles Mark W Method and system for packaging a MEMS device
US20060103613A1 (en) * 2004-09-27 2006-05-18 Clarence Chui Interferometric modulator array with integrated MEMS electrical switches
US20060103643A1 (en) * 2004-09-27 2006-05-18 Mithran Mathew Measuring and modeling power consumption in displays
US7679627B2 (en) 2004-09-27 2010-03-16 Qualcomm Mems Technologies, Inc. Controller and driver features for bi-stable display
US20060132383A1 (en) * 2004-09-27 2006-06-22 Idc, Llc System and method for illuminating interferometric modulator display
US7668415B2 (en) 2004-09-27 2010-02-23 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
WO2006036427A2 (en) * 2004-09-27 2006-04-06 Idc, Llc Method and device for selective adjustment of hysteresis window
EP1640960A3 (en) * 2004-09-27 2006-07-26 Idc, Llc Matrix display with interferometric modulators and integrated MEMS switches
EP1640944A3 (en) * 2004-09-27 2006-08-09 Idc, Llc Method and apparatus using sub-pixels with different intensity levels to increase the colour scale resolution of a display
US7667884B2 (en) 2004-09-27 2010-02-23 Qualcomm Mems Technologies, Inc. Interferometric modulators having charge persistence
US9097885B2 (en) 2004-09-27 2015-08-04 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US9086564B2 (en) 2004-09-27 2015-07-21 Qualcomm Mems Technologies, Inc. Conductive bus structure for interferometric modulator array
US9001412B2 (en) 2004-09-27 2015-04-07 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US8970939B2 (en) 2004-09-27 2015-03-03 Qualcomm Mems Technologies, Inc. Method and device for multistate interferometric light modulation
WO2006036506A1 (en) * 2004-09-27 2006-04-06 Idc, Llc Interferometric modulators having charge persistence
US20060209384A1 (en) * 2004-09-27 2006-09-21 Clarence Chui System and method of illuminating interferometric modulators using backlighting
US8885244B2 (en) 2004-09-27 2014-11-11 Qualcomm Mems Technologies, Inc. Display device
US20060065043A1 (en) * 2004-09-27 2006-03-30 William Cummings Method and system for detecting leak in electronic devices
US20060066504A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B System with server based control of client device display features
US8878771B2 (en) 2004-09-27 2014-11-04 Qualcomm Mems Technologies, Inc. Method and system for reducing power consumption in a display
US8878825B2 (en) 2004-09-27 2014-11-04 Qualcomm Mems Technologies, Inc. System and method for providing a variable refresh rate of an interferometric modulator display
US20060066561A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method and system for writing data to MEMS display elements
US20060067652A1 (en) * 2004-09-27 2006-03-30 Cummings William J Methods for visually inspecting interferometric modulators for defects
US20060066599A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Reflective display pixels arranged in non-rectangular arrays
US8735225B2 (en) 2004-09-27 2014-05-27 Qualcomm Mems Technologies, Inc. Method and system for packaging MEMS devices with glass seal
US20060066557A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and device for reflective display with time sequential color illumination
US8682130B2 (en) 2004-09-27 2014-03-25 Qualcomm Mems Technologies, Inc. Method and device for packaging a substrate
US20060066600A1 (en) * 2004-09-27 2006-03-30 Lauren Palmateer System and method for display device with reinforcing substance
US8638491B2 (en) 2004-09-27 2014-01-28 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US20060066936A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Interferometric optical modulator using filler material and method
US7663794B2 (en) 2004-09-27 2010-02-16 Qualcomm Mems Technologies, Inc. Methods and devices for inhibiting tilting of a movable element in a MEMS device
US20060066597A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Method and system for reducing power consumption in a display
US20060066542A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Interferometric modulators having charge persistence
US7675669B2 (en) 2004-09-27 2010-03-09 Qualcomm Mems Technologies, Inc. Method and system for driving interferometric modulators
US20070040777A1 (en) * 2004-09-27 2007-02-22 Cummings William J Methods and devices for inhibiting tilting of a mirror in an interferometric modulator
US20070041079A1 (en) * 2004-09-27 2007-02-22 Clarence Chui Interferometric modulators having charge persistence
US7184202B2 (en) 2004-09-27 2007-02-27 Idc, Llc Method and system for packaging a MEMS device
US8437071B2 (en) 2004-09-27 2013-05-07 Qualcomm Mems Technologies, Inc. Interferometric modulator array with integrated MEMS electrical switches
US20060066856A1 (en) * 2004-09-27 2006-03-30 William Cummings Systems and methods for measuring color and contrast in specular reflective devices
US20060065366A1 (en) * 2004-09-27 2006-03-30 Cummings William J Portable etch chamber
US8405899B2 (en) 2004-09-27 2013-03-26 Qualcomm Mems Technologies, Inc Photonic MEMS and structures
US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
US8390547B2 (en) 2004-09-27 2013-03-05 Qualcomm Mems Technologies, Inc. Conductive bus structure for interferometric modulator array
KR101227621B1 (en) 2004-09-27 2013-01-31 퀄컴 엠이엠에스 테크놀로지스, 인크. Method and device for reflectance with a predetermined spectral response
US8362987B2 (en) 2004-09-27 2013-01-29 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
WO2006036427A3 (en) * 2004-09-27 2007-08-02 Idc Llc Method and device for selective adjustment of hysteresis window
US8310441B2 (en) 2004-09-27 2012-11-13 Qualcomm Mems Technologies, Inc. Method and system for writing data to MEMS display elements
US8289613B2 (en) 2004-09-27 2012-10-16 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US20060067642A1 (en) * 2004-09-27 2006-03-30 Karen Tyger Method and device for providing electronic circuitry on a backplate
US8243360B2 (en) 2004-09-27 2012-08-14 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US8213075B2 (en) 2004-09-27 2012-07-03 Qualcomm Mems Technologies, Inc. Method and device for multistate interferometric light modulation
US20060067633A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Device and method for wavelength filtering
US20060066559A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method and system for writing data to MEMS display elements
US8124434B2 (en) 2004-09-27 2012-02-28 Qualcomm Mems Technologies, Inc. Method and system for packaging a display
US8115983B2 (en) 2004-09-27 2012-02-14 Qualcomm Mems Technologies, Inc. Method and system for packaging a MEMS device
US8098431B2 (en) 2004-09-27 2012-01-17 Qualcomm Mems Technologies, Inc. Method and device for generating white in an interferometric modulator display
US8090229B2 (en) 2004-09-27 2012-01-03 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
US20070247693A1 (en) * 2004-09-27 2007-10-25 Idc, Llc Method and system for packaging a mems device
US8081370B2 (en) 2004-09-27 2011-12-20 Qualcomm Mems Technologies, Inc. Support structures for electromechanical systems and methods of fabricating the same
CN1755477B (en) * 2004-09-27 2011-11-16 高通Mems科技公司 Interferometric modulator array display device with integrated MEMS electrical switches, and method therefor
US20060066594A1 (en) * 2004-09-27 2006-03-30 Karen Tyger Systems and methods for driving a bi-stable display element
US20060067653A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Method and system for driving interferometric modulators
US8045256B2 (en) 2004-09-27 2011-10-25 Qualcomm Mems Technologies, Inc. Method and device for compensating for color shift as a function of angle of view
US20060066876A1 (en) * 2004-09-27 2006-03-30 Manish Kothari Method and system for sensing light using interferometric elements
US8045835B2 (en) 2004-09-27 2011-10-25 Qualcomm Mems Technologies, Inc. Method and device for packaging a substrate
US20060067649A1 (en) * 2004-09-27 2006-03-30 Ming-Hau Tung Apparatus and method for reducing slippage between structures in an interferometric modulator
US8040588B2 (en) 2004-09-27 2011-10-18 Qualcomm Mems Technologies, Inc. System and method of illuminating interferometric modulators using backlighting
WO2006036392A1 (en) * 2004-09-27 2006-04-06 Idc, Llc Analog interferometric modulator device
US20110234603A1 (en) * 2004-09-27 2011-09-29 Qualcomm Mems Technologies, Inc. Conductive bus structure for interferometric modulator array
US20080013145A1 (en) * 2004-09-27 2008-01-17 Idc, Llc Microelectromechanical device with optical function separated from mechanical and electrical function
US20080013144A1 (en) * 2004-09-27 2008-01-17 Idc, Llc Microelectromechanical device with optical function separated from mechanical and electrical function
US20060066595A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Method and system for driving a bi-stable display
US20060067650A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of making a reflective display device using thin film transistor production techniques
US8008736B2 (en) 2004-09-27 2011-08-30 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device
US20060066863A1 (en) * 2004-09-27 2006-03-30 Cummings William J Electro-optical measurement of hysteresis in interferometric modulators
US8004504B2 (en) 2004-09-27 2011-08-23 Qualcomm Mems Technologies, Inc. Reduced capacitance display element
US7349141B2 (en) 2004-09-27 2008-03-25 Idc, Llc Method and post structures for interferometric modulation
US20080080043A1 (en) * 2004-09-27 2008-04-03 Idc, Llc Conductive bus structure for interferometric modulator array
US20110199668A1 (en) * 2004-09-27 2011-08-18 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
US7999993B2 (en) 2004-09-27 2011-08-16 Qualcomm Mems Technologies, Inc. Reflective display device having viewable display on both sides
US7995265B2 (en) 2004-09-27 2011-08-09 Qualcomm Mems Technologies, Inc. Interferometric modulators having charge persistence
US20080106784A1 (en) * 2004-09-27 2008-05-08 Clarence Chui Method and device for selective adjustment of hysteresis window
US20110188109A1 (en) * 2004-09-27 2011-08-04 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US20080110855A1 (en) * 2004-09-27 2008-05-15 Idc, Llc Methods and devices for inhibiting tilting of a mirror in an interferometric modulator
US20080115596A1 (en) * 2004-09-27 2008-05-22 Idc, Llc System and method of testing humidity in a sealed mems device
US20080115569A1 (en) * 2004-09-27 2008-05-22 Idc, Llc System and method of testing humidity in a sealed mems device
US7982700B2 (en) 2004-09-27 2011-07-19 Qualcomm Mems Technologies, Inc. Conductive bus structure for interferometric modulator array
US7385762B2 (en) 2004-09-27 2008-06-10 Idc, Llc Methods and devices for inhibiting tilting of a mirror in an interferometric modulator
US20060066872A1 (en) * 2004-09-27 2006-03-30 William Cummings Process control monitors for interferometric modulators
US7684104B2 (en) 2004-09-27 2010-03-23 Idc, Llc MEMS using filler material and method
US20080158647A1 (en) * 2004-09-27 2008-07-03 Idc, Llc Interferometric modulator array with integrated mems electrical switches
US20060066864A1 (en) * 2004-09-27 2006-03-30 William Cummings Process control monitors for interferometric modulators
US7653371B2 (en) 2004-09-27 2010-01-26 Qualcomm Mems Technologies, Inc. Selectable capacitance circuit
US20080180777A1 (en) * 2004-09-27 2008-07-31 Idc, Llc Method and post structures for interferometric modulation
US20110148828A1 (en) * 2004-09-27 2011-06-23 Qualcomm Mems Technologies Method and system for driving a bi-stable display
US20110128307A1 (en) * 2004-09-27 2011-06-02 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7952788B2 (en) 2004-09-27 2011-05-31 Qualcomm Mems Technologies, Inc. Method and device for selective adjustment of hysteresis window
US7420728B2 (en) * 2004-09-27 2008-09-02 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US20060067646A1 (en) * 2004-09-27 2006-03-30 Clarence Chui MEMS device fabricated on a pre-patterned substrate
US7948671B2 (en) 2004-09-27 2011-05-24 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US20060067651A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Photonic MEMS and structures
US7446926B2 (en) 2004-09-27 2008-11-04 Idc, Llc System and method of providing a regenerating protective coating in a MEMS device
US7944599B2 (en) 2004-09-27 2011-05-17 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US7936497B2 (en) 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. MEMS device having deformable membrane characterized by mechanical persistence
US7933476B2 (en) 2004-09-27 2011-04-26 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
US20060066871A1 (en) * 2004-09-27 2006-03-30 William Cummings Process control monitors for interferometric modulators
US7924494B2 (en) 2004-09-27 2011-04-12 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7920135B2 (en) 2004-09-27 2011-04-05 Qualcomm Mems Technologies, Inc. Method and system for driving a bi-stable display
US20060066596A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B System and method of transmitting video data
US7916103B2 (en) 2004-09-27 2011-03-29 Qualcomm Mems Technologies, Inc. System and method for display device with end-of-life phenomena
US7492503B2 (en) 2004-09-27 2009-02-17 Idc, Llc System and method for multi-level brightness in interferometric modulation
US7911677B2 (en) 2004-09-27 2011-03-22 Qualcomm Mems Technologies, Inc. MEMS switch with set and latch electrodes
US7911428B2 (en) * 2004-09-27 2011-03-22 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US20060066932A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of selective etching using etch stop layer
US7898521B2 (en) 2004-09-27 2011-03-01 Qualcomm Mems Technologies, Inc. Device and method for wavelength filtering
US20110044496A1 (en) * 2004-09-27 2011-02-24 Qualcomm Mems Technologies, Inc. Method and device for multistate interferometric light modulation
US20090086305A1 (en) * 2004-09-27 2009-04-02 Idc, Llc Mems switch with set and latch electrodes
US7518775B2 (en) 2004-09-27 2009-04-14 Idc, Llc Method and system for packaging a MEMS device
US7893919B2 (en) 2004-09-27 2011-02-22 Qualcomm Mems Technologies, Inc. Display region architectures
US7889415B2 (en) 2004-09-27 2011-02-15 Qualcomm Mems Technologies, Inc. Device having a conductive light absorbing mask and method for fabricating same
US20060066560A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Systems and methods of actuating MEMS display elements
US20060067641A1 (en) * 2004-09-27 2006-03-30 Lauren Palmateer Method and device for packaging a substrate
US20060067643A1 (en) * 2004-09-27 2006-03-30 Clarence Chui System and method for multi-level brightness in interferometric modulation
US7525730B2 (en) 2004-09-27 2009-04-28 Idc, Llc Method and device for generating white in an interferometric modulator display
US7859739B2 (en) 2004-09-27 2010-12-28 Qualcomm Mems Technologies, Inc. Interferometric modulator array with integrated MEMS electrical switches
US20060066543A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Ornamental display device
EP2264509A1 (en) * 2004-09-27 2010-12-22 Qualcomm Mems Technologies, Inc. Systems and methods for illuminating interferometric modulator display
US20090135465A1 (en) * 2004-09-27 2009-05-28 Idc, Llc System and method for multi-level brightness in interferometric modulation
US7542198B2 (en) 2004-09-27 2009-06-02 Idc, Llc Device having a conductive light absorbing mask and method for fabricating same
US20060066503A1 (en) * 2004-09-27 2006-03-30 Sampsell Jeffrey B Controller and driver features for bi-stable display
US7843410B2 (en) 2004-09-27 2010-11-30 Qualcomm Mems Technologies, Inc. Method and device for electrically programmable display
US7839557B2 (en) 2004-09-27 2010-11-23 Qualcomm Mems Technologies, Inc. Method and device for multistate interferometric light modulation
US20060066601A1 (en) * 2004-09-27 2006-03-30 Manish Kothari System and method for providing a variable refresh rate of an interferometric modulator display
US7561323B2 (en) 2004-09-27 2009-07-14 Idc, Llc Optical films for directing light towards active areas of displays
US7813026B2 (en) 2004-09-27 2010-10-12 Qualcomm Mems Technologies, Inc. System and method of reducing color shift in a display
US7573547B2 (en) 2004-09-27 2009-08-11 Idc, Llc System and method for protecting micro-structure of display array using spacers in gap within display device
US20090201566A1 (en) * 2004-09-27 2009-08-13 Idc, Llc Device having a conductive light absorbing mask and method for fabricating same
US7576901B2 (en) 2004-09-27 2009-08-18 Idc, Llc Method and device for selective adjustment of hysteresis window
US7808703B2 (en) 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. System and method for implementation of interferometric modulator displays
US7807488B2 (en) 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. Display element having filter material diffused in a substrate of the display element
US20060066541A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Method and device for manipulating color in a display
US7787173B2 (en) 2004-09-27 2010-08-31 Qualcomm Mems Technologies, Inc. System and method for multi-level brightness in interferometric modulation
US20060066598A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and device for electrically programmable display
US20100149624A1 (en) * 2004-09-27 2010-06-17 Qualcomm Mems Technologies, Inc. Method and device for compensating for color shift as a function of angle of view
US7724993B2 (en) 2004-09-27 2010-05-25 Qualcomm Mems Technologies, Inc. MEMS switches with deforming membranes
US20090257109A1 (en) * 2004-09-27 2009-10-15 Idc, Llc Method and system for packaging a mems device
US7719747B2 (en) 2004-09-27 2010-05-18 Qualcomm Mems Technologies, Inc. Method and post structures for interferometric modulation
US7719500B2 (en) 2004-09-27 2010-05-18 Qualcomm Mems Technologies, Inc. Reflective display pixels arranged in non-rectangular arrays
US7710629B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. System and method for display device with reinforcing substance
US20090267953A1 (en) * 2004-09-27 2009-10-29 Idc, Llc Controller and driver features for bi-stable display
US20090267934A1 (en) * 2004-09-27 2009-10-29 Idc, Llc Method and device for selective adjustment of hysteresis window
US7710632B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. Display device having an array of spatial light modulators with integrated color filters
US20060065436A1 (en) * 2004-09-27 2006-03-30 Brian Gally System and method for protecting microelectromechanical systems array using back-plate with non-flat portion
US20090279162A1 (en) * 2004-09-27 2009-11-12 Idc, Llc Photonic mems and structures
US20060066937A1 (en) * 2004-09-27 2006-03-30 Idc, Llc Mems switch with set and latch electrodes
US20090296191A1 (en) * 2004-09-27 2009-12-03 Idc, Llc Method and device for generating white in an interferometric modulator display
EP1640774A1 (en) * 2004-09-27 2006-03-29 Idc, Llc Method and system for packaging a mems device
US7701631B2 (en) 2004-09-27 2010-04-20 Qualcomm Mems Technologies, Inc. Device having patterned spacers for backplates and method of making the same
US20100085626A1 (en) * 2004-09-27 2010-04-08 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7692839B2 (en) 2004-09-27 2010-04-06 Qualcomm Mems Technologies, Inc. System and method of providing MEMS device with anti-stiction coating
EP1640944A2 (en) * 2004-09-27 2006-03-29 Idc, Llc Method and apparatus using sub-pixels with different intensity levels to increase the colour scale resolution of a display
US20100079421A1 (en) * 2004-09-27 2010-04-01 Qualcomm Mems Technologies, Inc. Interferometric modulators having charge persistence
US20100080890A1 (en) * 2004-09-27 2010-04-01 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing slippage between structures in an interferometric modulator
US7663608B2 (en) * 2004-11-19 2010-02-16 Au Optronics Corp. Handwriting input apparatus
US20060109260A1 (en) * 2004-11-19 2006-05-25 Au Optronics Corp. Handwriting input apparatus
US7403321B2 (en) 2004-12-30 2008-07-22 Au Optronics Corp. Optical microelectromechanical device
US7164524B2 (en) 2004-12-30 2007-01-16 Au Optronics Corp. Optical microelectromechanical device and fabrication method thereof
US20060146396A1 (en) * 2004-12-30 2006-07-06 Au Optronics Corp. Optical microelectromechanical device
US20080157413A1 (en) * 2005-02-04 2008-07-03 Qualcomm Mems Technologies, Inc. Method of manufacturing optical interference color display
US20060177950A1 (en) * 2005-02-04 2006-08-10 Wen-Jian Lin Method of manufacturing optical interferance color display
US20060250676A1 (en) * 2005-02-23 2006-11-09 Pixtronix, Incorporated Light concentrating reflective display methods and apparatus
US20070091038A1 (en) * 2005-02-23 2007-04-26 Pixtronix, Incorporated Methods and apparatus for spatial light modulation
US9530344B2 (en) 2005-02-23 2016-12-27 Snaptrack, Inc. Circuits for controlling display apparatus
US20080123175A1 (en) * 2005-02-23 2008-05-29 Pixtronix, Inc. Methods for manufacturing displays
US9336732B2 (en) 2005-02-23 2016-05-10 Pixtronix, Inc. Circuits for controlling display apparatus
US9274333B2 (en) 2005-02-23 2016-03-01 Pixtronix, Inc. Alignment methods in fluid-filled MEMS displays
US20080145527A1 (en) * 2005-02-23 2008-06-19 Pixtronix, Inc. Methods and apparatus for spatial light modulation
US9261694B2 (en) 2005-02-23 2016-02-16 Pixtronix, Inc. Display apparatus and methods for manufacture thereof
US9229222B2 (en) 2005-02-23 2016-01-05 Pixtronix, Inc. Alignment methods in fluid-filled MEMS displays
US9177523B2 (en) 2005-02-23 2015-11-03 Pixtronix, Inc. Circuits for controlling display apparatus
US20080037104A1 (en) * 2005-02-23 2008-02-14 Pixtronix, Inc. Alignment methods in fluid-filled MEMS displays
US9158106B2 (en) 2005-02-23 2015-10-13 Pixtronix, Inc. Display methods and apparatus
JP2008532069A (en) * 2005-02-23 2008-08-14 ピクストロニクス,インコーポレイテッド Method and apparatus for spatial light modulation
US7927654B2 (en) * 2005-02-23 2011-04-19 Pixtronix, Inc. Methods and apparatus for spatial light modulation
US20060187191A1 (en) * 2005-02-23 2006-08-24 Pixtronix, Incorporated Display methods and apparatus
US20060187528A1 (en) * 2005-02-23 2006-08-24 Pixtronix, Incorporated Methods and apparatus for spatial light modulation
US9087486B2 (en) 2005-02-23 2015-07-21 Pixtronix, Inc. Circuits for controlling display apparatus
US20060187531A1 (en) * 2005-02-23 2006-08-24 Pixtronix, Incorporated Methods and apparatus for bi-stable actuation of displays
CN101151207B (en) * 2005-02-23 2012-01-04 皮克斯特罗尼克斯公司 Display device and method of image formation
CN102401992A (en) * 2005-02-23 2012-04-04 皮克斯特罗尼克斯公司 Method of forming image
US20060187190A1 (en) * 2005-02-23 2006-08-24 Pixtronix, Incorporated Display methods and apparatus
US8159428B2 (en) 2005-02-23 2012-04-17 Pixtronix, Inc. Display methods and apparatus
KR101484646B1 (en) 2005-02-23 2015-01-22 픽스트로닉스 인코포레이티드 Methods and apparatus for spatial light modulation
US8310442B2 (en) 2005-02-23 2012-11-13 Pixtronix, Inc. Circuits for controlling display apparatus
US20070159679A1 (en) * 2005-02-23 2007-07-12 Pixtronix, Incorporated Methods and apparatus for spatial light modulation
US20060209012A1 (en) * 2005-02-23 2006-09-21 Pixtronix, Incorporated Devices having MEMS displays
KR101458477B1 (en) 2005-02-23 2014-11-07 픽스트로닉스 인코포레이티드 Methods and apparatus for spatial light modulation
CN104134409A (en) * 2005-02-23 2014-11-05 皮克斯特隆尼斯有限公司 Methods for forming image
KR101242504B1 (en) 2005-02-23 2013-03-12 픽스트로닉스 인코포레이티드 Methods and apparatus for spatial light modulation
US7839356B2 (en) 2005-02-23 2010-11-23 Pixtronix, Incorporated Display methods and apparatus
KR100991080B1 (en) 2005-02-23 2010-10-29 픽스트로닉스 인코포레이티드 Methods and apparatus for spatial light modulation
US7742016B2 (en) 2005-02-23 2010-06-22 Pixtronix, Incorporated Display methods and apparatus
WO2006091904A3 (en) * 2005-02-23 2006-11-16 Pixtronix Inc Methods and apparatus for spatial light modulation
KR101410401B1 (en) 2005-02-23 2014-06-20 픽스트로닉스 인코포레이티드 Methods and apparatus for spatial light modulation
US7746529B2 (en) 2005-02-23 2010-06-29 Pixtronix, Inc. MEMS display apparatus
US8519923B2 (en) 2005-02-23 2013-08-27 Pixtronix, Inc. Display methods and apparatus
US7755582B2 (en) 2005-02-23 2010-07-13 Pixtronix, Incorporated Display methods and apparatus
US7675665B2 (en) 2005-02-23 2010-03-09 Pixtronix, Incorporated Methods and apparatus for actuating displays
US20070002156A1 (en) * 2005-02-23 2007-01-04 Pixtronix, Incorporated Display apparatus and methods for manufacture thereof
KR101365130B1 (en) 2005-02-23 2014-02-20 픽스트로닉스 인코포레이티드 Methods and apparatus for spatial light modulation
US20060256039A1 (en) * 2005-02-23 2006-11-16 Pixtronix, Incorporated Display methods and apparatus
US8174469B2 (en) 2005-05-05 2012-05-08 Qualcomm Mems Technologies, Inc. Dynamic driver IC and display panel configuration
US7920136B2 (en) 2005-05-05 2011-04-05 Qualcomm Mems Technologies, Inc. System and method of driving a MEMS display device
US7948457B2 (en) 2005-05-05 2011-05-24 Qualcomm Mems Technologies, Inc. Systems and methods of actuating MEMS display elements
US20060250350A1 (en) * 2005-05-05 2006-11-09 Manish Kothari Systems and methods of actuating MEMS display elements
US20060250335A1 (en) * 2005-05-05 2006-11-09 Stewart Richard A System and method of driving a MEMS display device
US7884989B2 (en) 2005-05-27 2011-02-08 Qualcomm Mems Technologies, Inc. White interferometric modulators and methods for forming the same
US20060277486A1 (en) * 2005-06-02 2006-12-07 Skinner David N File or user interface element marking system
US7460292B2 (en) 2005-06-03 2008-12-02 Qualcomm Mems Technologies, Inc. Interferometric modulator with internal polarization and drive method
US20070008601A1 (en) * 2005-07-09 2007-01-11 Samsung Electronics Co., Ltd. Optical scanner package
US7362484B2 (en) * 2005-07-09 2008-04-22 Samsung Electronics Co., Ltd. Optical scanner package with optical noise reduction
US20070053652A1 (en) * 2005-09-02 2007-03-08 Marc Mignard Method and system for driving MEMS display elements
US7733553B2 (en) * 2005-09-21 2010-06-08 Hewlett-Packard Development Company, L.P. Light modulator with tunable optical state
US20070064295A1 (en) * 2005-09-21 2007-03-22 Kenneth Faase Light modulator with tunable optical state
US20100046058A1 (en) * 2005-10-28 2010-02-25 Qualcomm Mems Technologies, Inc. Diffusion barrier layer for mems devices
US8085458B2 (en) 2005-10-28 2011-12-27 Qualcomm Mems Technologies, Inc. Diffusion barrier layer for MEMS devices
EP2210857A1 (en) * 2005-11-16 2010-07-28 QUALCOMM MEMS Technologies, Inc. MEMS switch with set and latch electrodes
US8391630B2 (en) 2005-12-22 2013-03-05 Qualcomm Mems Technologies, Inc. System and method for power reduction when decompressing video streams for interferometric modulator displays
US20070147688A1 (en) * 2005-12-22 2007-06-28 Mithran Mathew System and method for power reduction when decompressing video streams for interferometric modulator displays
US8394656B2 (en) 2005-12-29 2013-03-12 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US8519945B2 (en) 2006-01-06 2013-08-27 Pixtronix, Inc. Circuits for controlling display apparatus
US7636151B2 (en) * 2006-01-06 2009-12-22 Qualcomm Mems Technologies, Inc. System and method for providing residual stress test structures
US20070177129A1 (en) * 2006-01-06 2007-08-02 Manish Kothari System and method for providing residual stress test structures
US8482496B2 (en) 2006-01-06 2013-07-09 Pixtronix, Inc. Circuits for controlling MEMS display apparatus on a transparent substrate
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US20110177745A1 (en) * 2006-01-13 2011-07-21 Qualcomm Mems Technologies, Inc. Interconnect structure for mems device
US8971675B2 (en) 2006-01-13 2015-03-03 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US20070189654A1 (en) * 2006-01-13 2007-08-16 Lasiter Jon B Interconnect structure for MEMS device
US20070170540A1 (en) * 2006-01-18 2007-07-26 Chung Won Suk Silicon-rich silicon nitrides as etch stops in MEMS manufature
US8194056B2 (en) 2006-02-09 2012-06-05 Qualcomm Mems Technologies Inc. Method and system for writing data to MEMS display elements
US20070182707A1 (en) * 2006-02-09 2007-08-09 Manish Kothari Method and system for writing data to MEMS display elements
US20070196040A1 (en) * 2006-02-17 2007-08-23 Chun-Ming Wang Method and apparatus for providing back-lighting in an interferometric modulator display device
US20070194414A1 (en) * 2006-02-21 2007-08-23 Chen-Jean Chou Method for providing and removing discharging interconnect for chip-on-glass output leads and structures thereof
US20070196944A1 (en) * 2006-02-22 2007-08-23 Chen-Jean Chou Electrical conditioning of MEMS device and insulating layer thereof
US20090256218A1 (en) * 2006-02-23 2009-10-15 Qualcomm Mems Technologies, Inc. Mems device having a layer movable at asymmetric rates
US20070194630A1 (en) * 2006-02-23 2007-08-23 Marc Mignard MEMS device having a layer movable at asymmetric rates
US9128277B2 (en) 2006-02-23 2015-09-08 Pixtronix, Inc. Mechanical light modulators with stressed beams
US8526096B2 (en) 2006-02-23 2013-09-03 Pixtronix, Inc. Mechanical light modulators with stressed beams
US20070206267A1 (en) * 2006-03-02 2007-09-06 Ming-Hau Tung Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US20070211257A1 (en) * 2006-03-09 2007-09-13 Kearl Daniel A Fabry-Perot Interferometer Composite and Method
US7746537B2 (en) 2006-04-13 2010-06-29 Qualcomm Mems Technologies, Inc. MEMS devices and processes for packaging such devices
US20070242341A1 (en) * 2006-04-13 2007-10-18 Qualcomm Incorporated Mems devices and processes for packaging such devices
US8441412B2 (en) 2006-04-17 2013-05-14 Qualcomm Mems Technologies, Inc. Mode indicator for interferometric modulator displays
US20110115690A1 (en) * 2006-04-17 2011-05-19 Qualcomm Mems Technologies, Inc. Mode indicator for interferometric modulator displays
CN101421770A (en) * 2006-04-17 2009-04-29 高通Mems科技公司 Mode indicator for interferometric modulator displays
US7903047B2 (en) * 2006-04-17 2011-03-08 Qualcomm Mems Technologies, Inc. Mode indicator for interferometric modulator displays
CN103680389A (en) * 2006-04-17 2014-03-26 高通Mems科技公司 A method and apparatus for displaying data on bi-stable and non-bi-stable displays
US20070242008A1 (en) * 2006-04-17 2007-10-18 William Cummings Mode indicator for interferometric modulator displays
US7711239B2 (en) 2006-04-19 2010-05-04 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing nanoparticles
US20070249081A1 (en) * 2006-04-19 2007-10-25 Qi Luo Non-planar surface structures and process for microelectromechanical systems
US20080030825A1 (en) * 2006-04-19 2008-02-07 Qualcomm Incorporated Microelectromechanical device and method utilizing a porous surface
US20070247704A1 (en) * 2006-04-21 2007-10-25 Marc Mignard Method and apparatus for providing brightness control in an interferometric modulator (IMOD) display
US8004743B2 (en) 2006-04-21 2011-08-23 Qualcomm Mems Technologies, Inc. Method and apparatus for providing brightness control in an interferometric modulator (IMOD) display
US8049713B2 (en) 2006-04-24 2011-11-01 Qualcomm Mems Technologies, Inc. Power consumption optimized display update
US20070247419A1 (en) * 2006-04-24 2007-10-25 Sampsell Jeffrey B Power consumption optimized display update
US20070258123A1 (en) * 2006-05-03 2007-11-08 Gang Xu Electrode and interconnect materials for MEMS devices
US20070279729A1 (en) * 2006-06-01 2007-12-06 Manish Kothari Analog interferometric modulator device with electrostatic actuation and release
US8098416B2 (en) 2006-06-01 2012-01-17 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US7649671B2 (en) 2006-06-01 2010-01-19 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US20100118382A1 (en) * 2006-06-01 2010-05-13 Qualcomm Mems Technologies, Inc. Analog interferometric modulator device with electrostatic actuation and release
US20070279727A1 (en) * 2006-06-05 2007-12-06 Pixtronix, Inc. Display apparatus with optical cavities
US7876489B2 (en) 2006-06-05 2011-01-25 Pixtronix, Inc. Display apparatus with optical cavities
US7898725B2 (en) 2006-06-15 2011-03-01 Qualcomm Mems Technologies, Inc. Apparatuses with enhanced low range bit depth
US7808695B2 (en) 2006-06-15 2010-10-05 Qualcomm Mems Technologies, Inc. Method and apparatus for low range bit depth enhancement for MEMS display architectures
US20100328755A1 (en) * 2006-06-15 2010-12-30 Qualcomm Mems Technologies, Inc. Apparatuses with enhanced low range bit depth
US7702192B2 (en) 2006-06-21 2010-04-20 Qualcomm Mems Technologies, Inc. Systems and methods for driving MEMS display
US20080003710A1 (en) * 2006-06-28 2008-01-03 Lior Kogut Support structure for free-standing MEMS device and methods for forming the same
US7835061B2 (en) 2006-06-28 2010-11-16 Qualcomm Mems Technologies, Inc. Support structures for free-standing electromechanical devices
US7777715B2 (en) 2006-06-29 2010-08-17 Qualcomm Mems Technologies, Inc. Passive circuits for de-multiplexing display inputs
US8102590B2 (en) 2006-06-30 2012-01-24 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US20080003737A1 (en) * 2006-06-30 2008-01-03 Ming-Hau Tung Method of manufacturing MEMS devices providing air gap control
US7952787B2 (en) 2006-06-30 2011-05-31 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US8964280B2 (en) 2006-06-30 2015-02-24 Qualcomm Mems Technologies, Inc. Method of manufacturing MEMS devices providing air gap control
US20090213451A1 (en) * 2006-06-30 2009-08-27 Qualcomm Mems Technology, Inc. Method of manufacturing mems devices providing air gap control
US20080002210A1 (en) * 2006-06-30 2008-01-03 Kostadin Djordjev Determination of interferometric modulator mirror curvature and airgap variation using digital photographs
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US20080032439A1 (en) * 2006-08-02 2008-02-07 Xiaoming Yan Selective etching of MEMS using gaseous halides and reactive co-etchants
US20080043315A1 (en) * 2006-08-15 2008-02-21 Cummings William J High profile contacts for microelectromechanical systems
US7845841B2 (en) 2006-08-28 2010-12-07 Qualcomm Mems Technologies, Inc. Angle sweeping holographic illuminator
US20100182308A1 (en) * 2006-10-06 2010-07-22 Holman Robert L Light bar including turning microstructures and contoured back reflector
US20080094690A1 (en) * 2006-10-18 2008-04-24 Qi Luo Spatial Light Modulator
US8545084B2 (en) 2006-10-20 2013-10-01 Pixtronix, Inc. Light guides and backlight systems incorporating light redirectors at varying densities
US8262274B2 (en) 2006-10-20 2012-09-11 Pitronix, Inc. Light guides and backlight systems incorporating light redirectors at varying densities
US20080100900A1 (en) * 2006-10-27 2008-05-01 Clarence Chui Light guide including optical scattering elements and a method of manufacture
US7864395B2 (en) 2006-10-27 2011-01-04 Qualcomm Mems Technologies, Inc. Light guide including optical scattering elements and a method of manufacture
US20080111834A1 (en) * 2006-11-09 2008-05-15 Mignard Marc M Two primary color display
US7777954B2 (en) 2007-01-30 2010-08-17 Qualcomm Mems Technologies, Inc. Systems and methods of providing a light guiding layer
US20080180956A1 (en) * 2007-01-30 2008-07-31 Qualcomm Mems Technologies, Inc. Systems and methods of providing a light guiding layer
US20080186581A1 (en) * 2007-02-01 2008-08-07 Qualcomm Incorporated Modulating the intensity of light from an interferometric reflector
US8115987B2 (en) 2007-02-01 2012-02-14 Qualcomm Mems Technologies, Inc. Modulating the intensity of light from an interferometric reflector
US7742220B2 (en) 2007-03-28 2010-06-22 Qualcomm Mems Technologies, Inc. Microelectromechanical device and method utilizing conducting layers separated by stops
US20080239455A1 (en) * 2007-03-28 2008-10-02 Lior Kogut Microelectromechanical device and method utilizing conducting layers separated by stops
US8081368B2 (en) 2007-03-29 2011-12-20 Bose Corporation Selective absorbing
US20080267572A1 (en) * 2007-04-30 2008-10-30 Qualcomm Mems Technologies, Inc. Dual film light guide for illuminating displays
US7733439B2 (en) 2007-04-30 2010-06-08 Qualcomm Mems Technologies, Inc. Dual film light guide for illuminating displays
US7889417B2 (en) 2007-05-09 2011-02-15 Qualcomm Mems Technologies, Inc. Electromechanical system having a dielectric movable membrane
US7715085B2 (en) 2007-05-09 2010-05-11 Qualcomm Mems Technologies, Inc. Electromechanical system having a dielectric movable membrane and a mirror
US20080278788A1 (en) * 2007-05-09 2008-11-13 Qualcomm Incorporated Microelectromechanical system having a dielectric movable membrane and a mirror
US20080278787A1 (en) * 2007-05-09 2008-11-13 Qualcomm Incorporated Microelectromechanical system having a dielectric movable membrane and a mirror
US8098417B2 (en) 2007-05-09 2012-01-17 Qualcomm Mems Technologies, Inc. Electromechanical system having a dielectric movable membrane
US20090273824A1 (en) * 2007-05-09 2009-11-05 Qualcomm Mems Techologies, Inc. Electromechanical system having a dielectric movable membrane
US20110134505A1 (en) * 2007-05-09 2011-06-09 Qualcomm Mems Technologies, Inc. Electromechanical system having a dielectric movable membrane
US8111262B2 (en) 2007-05-18 2012-02-07 Qualcomm Mems Technologies, Inc. Interferometric modulator displays with reduced color sensitivity
US20080288225A1 (en) * 2007-05-18 2008-11-20 Kostadin Djordjev Interferometric modulator displays with reduced color sensitivity
US9176318B2 (en) 2007-05-18 2015-11-03 Pixtronix, Inc. Methods for manufacturing fluid-filled MEMS displays
US7643199B2 (en) 2007-06-19 2010-01-05 Qualcomm Mems Technologies, Inc. High aperture-ratio top-reflective AM-iMod displays
US20080316566A1 (en) * 2007-06-19 2008-12-25 Qualcomm Incorporated High aperture-ratio top-reflective am-imod displays
US20080316568A1 (en) * 2007-06-21 2008-12-25 Qualcomm Incorporated Infrared and dual mode displays
US7782517B2 (en) 2007-06-21 2010-08-24 Qualcomm Mems Technologies, Inc. Infrared and dual mode displays
US7710645B2 (en) 2007-06-29 2010-05-04 Bose Corporation Selective reflecting for laser projector
US7920319B2 (en) 2007-07-02 2011-04-05 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US8368997B2 (en) 2007-07-02 2013-02-05 Qualcomm Mems Technologies, Inc. Electromechanical device with optical function separated from mechanical and electrical function
US20090009845A1 (en) * 2007-07-02 2009-01-08 Qualcomm Incorporated Microelectromechanical device with optical function separated from mechanical and electrical function
US8081373B2 (en) 2007-07-31 2011-12-20 Qualcomm Mems Technologies, Inc. Devices and methods for enhancing color shift of interferometric modulators
US8736949B2 (en) 2007-07-31 2014-05-27 Qualcomm Mems Technologies, Inc. Devices and methods for enhancing color shift of interferometric modulators
US20110026095A1 (en) * 2007-07-31 2011-02-03 Qualcomm Mems Technologies, Inc. Devices and methods for enhancing color shift of interferometric modulators
US20090059346A1 (en) * 2007-08-29 2009-03-05 Qualcomm Incorporated Interferometric Optical Modulator With Broadband Reflection Characteristics
US8072402B2 (en) 2007-08-29 2011-12-06 Qualcomm Mems Technologies, Inc. Interferometric optical modulator with broadband reflection characteristics
EP2030947A2 (en) * 2007-08-29 2009-03-04 Qualcomm Mems Technologies, Inc. Interferometric optical modulator with broadband reflection characteristics
EP2030947A3 (en) * 2007-08-29 2009-04-22 Qualcomm Mems Technologies, Inc. Interferometric optical modulator with broadband reflection characteristics
US7847999B2 (en) 2007-09-14 2010-12-07 Qualcomm Mems Technologies, Inc. Interferometric modulator display devices
US7773286B2 (en) 2007-09-14 2010-08-10 Qualcomm Mems Technologies, Inc. Periodic dimple array
US20090073534A1 (en) * 2007-09-14 2009-03-19 Donovan Lee Interferometric modulator display devices
US20090073539A1 (en) * 2007-09-14 2009-03-19 Qualcomm Incorporated Periodic dimple array
US20100309572A1 (en) * 2007-09-14 2010-12-09 Qualcomm Mems Technologies, Inc. Periodic dimple array
US20100236624A1 (en) * 2007-09-24 2010-09-23 Qualcomm Mems Technologies, Inc. Interferometric photovoltaic cell
US20090078316A1 (en) * 2007-09-24 2009-03-26 Qualcomm Incorporated Interferometric photovoltaic cell
US20100284055A1 (en) * 2007-10-19 2010-11-11 Qualcomm Mems Technologies, Inc. Display with integrated photovoltaic device
US20090101192A1 (en) * 2007-10-19 2009-04-23 Qualcomm Incorporated Photovoltaic devices with integrated color interferometric film stacks
US8058549B2 (en) 2007-10-19 2011-11-15 Qualcomm Mems Technologies, Inc. Photovoltaic devices with integrated color interferometric film stacks
US8797628B2 (en) 2007-10-19 2014-08-05 Qualcomm Memstechnologies, Inc. Display with integrated photovoltaic device
US7852546B2 (en) 2007-10-19 2010-12-14 Pixtronix, Inc. Spacers for maintaining display apparatus alignment
US20090103164A1 (en) * 2007-10-19 2009-04-23 Pixtronix, Inc. Spacers for maintaining display apparatus alignment
US20090103166A1 (en) * 2007-10-23 2009-04-23 Qualcomm Mems Technologies, Inc. Adjustably transmissive mems-based devices
US8054527B2 (en) 2007-10-23 2011-11-08 Qualcomm Mems Technologies, Inc. Adjustably transmissive MEMS-based devices
US20090293955A1 (en) * 2007-11-07 2009-12-03 Qualcomm Incorporated Photovoltaics with interferometric masks
US8941631B2 (en) 2007-11-16 2015-01-27 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display
US20090126777A1 (en) * 2007-11-16 2009-05-21 Qualcomm Mems Technologies, Inc. Simultaneous light collection and illumination on an active display
US7715079B2 (en) 2007-12-07 2010-05-11 Qualcomm Mems Technologies, Inc. MEMS devices requiring no mechanical support
US20090147343A1 (en) * 2007-12-07 2009-06-11 Lior Kogut Mems devices requiring no mechanical support
US7949213B2 (en) * 2007-12-07 2011-05-24 Qualcomm Mems Technologies, Inc. Light illumination of displays with front light guide and coupling elements
US20090147535A1 (en) * 2007-12-07 2009-06-11 Qualcomm Incorporated Light illumination of displays with front light guide and coupling elements
US20090242024A1 (en) * 2007-12-17 2009-10-01 Qualcomm Mems Technologies, Inc. Photovoltaics with interferometric back side masks
US8193441B2 (en) 2007-12-17 2012-06-05 Qualcomm Mems Technologies, Inc. Photovoltaics with interferometric ribbon masks
US20090151771A1 (en) * 2007-12-17 2009-06-18 Qualcomm Mems Technologies, Inc. Photovoltaics with interferometric ribbon masks
US20090159123A1 (en) * 2007-12-21 2009-06-25 Qualcomm Mems Technologies, Inc. Multijunction photovoltaic cells
US8674904B2 (en) * 2008-01-31 2014-03-18 Japan Display West Inc. Color display device with a non-rectangle display
US20090195481A1 (en) * 2008-01-31 2009-08-06 Epson Imaging Devices Corporation Display device
US20090207159A1 (en) * 2008-02-11 2009-08-20 Qualcomm Mems Technologies, Inc. Method and apparatus for sensing, measurement or characterization of display elements integrated with the display drive scheme, and system and applications using the same
US8164821B2 (en) 2008-02-22 2012-04-24 Qualcomm Mems Technologies, Inc. Microelectromechanical device with thermal expansion balancing layer or stiffening layer
US20090225395A1 (en) * 2008-03-07 2009-09-10 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US7944604B2 (en) 2008-03-07 2011-05-17 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US8174752B2 (en) 2008-03-07 2012-05-08 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US8693084B2 (en) 2008-03-07 2014-04-08 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US20110194169A1 (en) * 2008-03-07 2011-08-11 Qualcomm Mems Technologies, Inc. Interferometric modulator in transmission mode
US7612933B2 (en) 2008-03-27 2009-11-03 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US20100014148A1 (en) * 2008-03-27 2010-01-21 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US8068269B2 (en) 2008-03-27 2011-11-29 Qualcomm Mems Technologies, Inc. Microelectromechanical device with spacing layer
US20090251761A1 (en) * 2008-04-02 2009-10-08 Kasra Khazeni Microelectromechanical systems display element with photovoltaic structure
US7898723B2 (en) 2008-04-02 2011-03-01 Qualcomm Mems Technologies, Inc. Microelectromechanical systems display element with photovoltaic structure
US20090257105A1 (en) * 2008-04-10 2009-10-15 Qualcomm Mems Technologies, Inc. Device having thin black mask and method of fabricating the same
US7969638B2 (en) 2008-04-10 2011-06-28 Qualcomm Mems Technologies, Inc. Device having thin black mask and method of fabricating the same
US20090255569A1 (en) * 2008-04-11 2009-10-15 Qualcomm Mems Technologies, Inc. Method to improve pv aesthetics and efficiency
US20090257245A1 (en) * 2008-04-18 2009-10-15 Pixtronix, Inc. Light guides and backlight systems incorporating prismatic structures and light redirectors
US8248560B2 (en) 2008-04-18 2012-08-21 Pixtronix, Inc. Light guides and backlight systems incorporating prismatic structures and light redirectors
US8441602B2 (en) 2008-04-18 2013-05-14 Pixtronix, Inc. Light guides and backlight systems incorporating prismatic structures and light redirectors
US9243774B2 (en) 2008-04-18 2016-01-26 Pixtronix, Inc. Light guides and backlight systems incorporating prismatic structures and light redirectors
US8023167B2 (en) 2008-06-25 2011-09-20 Qualcomm Mems Technologies, Inc. Backlight displays
US20090323165A1 (en) * 2008-06-25 2009-12-31 Qualcomm Mems Technologies, Inc. Method for packaging a display device and the device obtained thereof
US20090323153A1 (en) * 2008-06-25 2009-12-31 Qualcomm Mems Technologies, Inc. Backlight displays
US7746539B2 (en) 2008-06-25 2010-06-29 Qualcomm Mems Technologies, Inc. Method for packing a display device and the device obtained thereof
US7768690B2 (en) 2008-06-25 2010-08-03 Qualcomm Mems Technologies, Inc. Backlight displays
US20090323170A1 (en) * 2008-06-30 2009-12-31 Qualcomm Mems Technologies, Inc. Groove on cover plate or substrate
US20100128337A1 (en) * 2008-07-11 2010-05-27 Yeh-Jiun Tung Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control
US7859740B2 (en) 2008-07-11 2010-12-28 Qualcomm Mems Technologies, Inc. Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control
US20110090554A1 (en) * 2008-07-11 2011-04-21 Qualcomm Mems Technologies, Inc. Stiction mitigation with integrated mech micro-cantilevers through vertical stress gradient control
US20110157679A1 (en) * 2008-08-04 2011-06-30 Pixtronix, Inc. Methods for manufacturing cold seal fluid-filled display apparatus
US20100027100A1 (en) * 2008-08-04 2010-02-04 Pixtronix, Inc. Display with controlled formation of bubbles
US8520285B2 (en) 2008-08-04 2013-08-27 Pixtronix, Inc. Methods for manufacturing cold seal fluid-filled display apparatus
US8891152B2 (en) 2008-08-04 2014-11-18 Pixtronix, Inc. Methods for manufacturing cold seal fluid-filled display apparatus
US7855826B2 (en) 2008-08-12 2010-12-21 Qualcomm Mems Technologies, Inc. Method and apparatus to reduce or eliminate stiction and image retention in interferometric modulator devices
US20100053148A1 (en) * 2008-09-02 2010-03-04 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
US8358266B2 (en) 2008-09-02 2013-01-22 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
US20100096011A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. High efficiency interferometric color filters for photovoltaic modules
US8169679B2 (en) 2008-10-27 2012-05-01 Pixtronix, Inc. MEMS anchors
US9116344B2 (en) 2008-10-27 2015-08-25 Pixtronix, Inc. MEMS anchors
US8599463B2 (en) 2008-10-27 2013-12-03 Pixtronix, Inc. MEMS anchors
US20100110518A1 (en) * 2008-10-27 2010-05-06 Pixtronix, Inc. Mems anchors
US8592877B2 (en) 2009-01-27 2013-11-26 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Embedded MEMS sensors and related methods
US8558250B2 (en) 2009-01-27 2013-10-15 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Displays with embedded MEMS sensors and related methods
US8610223B2 (en) 2009-01-27 2013-12-17 Arizona Board Of Regents Embedded microelectromechanical systems sensor and related devices and methods
WO2010110827A1 (en) * 2009-01-27 2010-09-30 Arizona Board Of Regents, For And On Behalf Of Arizona State University Displays with embedded mems sensors and related methods
US20100238572A1 (en) * 2009-03-23 2010-09-23 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
US8270056B2 (en) 2009-03-23 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with openings between sub-pixels and method of making same
US20110063712A1 (en) * 2009-09-17 2011-03-17 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
US8270062B2 (en) 2009-09-17 2012-09-18 Qualcomm Mems Technologies, Inc. Display device with at least one movable stop element
US8488228B2 (en) 2009-09-28 2013-07-16 Qualcomm Mems Technologies, Inc. Interferometric display with interferometric reflector
US20110075241A1 (en) * 2009-09-28 2011-03-31 Qualcomm Mems Technologies, Inc. Interferometric display with interferometric reflector
US20110096508A1 (en) * 2009-10-23 2011-04-28 Qualcomm Mems Technologies, Inc. Light-based sealing and device packaging
US8379392B2 (en) 2009-10-23 2013-02-19 Qualcomm Mems Technologies, Inc. Light-based sealing and device packaging
US9082353B2 (en) 2010-01-05 2015-07-14 Pixtronix, Inc. Circuits for controlling display apparatus
US20110164067A1 (en) * 2010-01-05 2011-07-07 Pixtronix, Inc. Circuits for controlling display apparatus
US20110205756A1 (en) * 2010-02-19 2011-08-25 Pixtronix, Inc. Light guides and backlight systems incorporating prismatic structures and light redirectors
US8817357B2 (en) 2010-04-09 2014-08-26 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of forming the same
US8797632B2 (en) 2010-08-17 2014-08-05 Qualcomm Mems Technologies, Inc. Actuation and calibration of charge neutral electrode of a display device
US9057872B2 (en) 2010-08-31 2015-06-16 Qualcomm Mems Technologies, Inc. Dielectric enhanced mirror for IMOD display
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US9081188B2 (en) 2011-11-04 2015-07-14 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device
US8736939B2 (en) 2011-11-04 2014-05-27 Qualcomm Mems Technologies, Inc. Matching layer thin-films for an electromechanical systems reflective display device
US9678329B2 (en) * 2011-12-22 2017-06-13 Qualcomm Inc. Angled facets for display devices
US20130162656A1 (en) * 2011-12-22 2013-06-27 Robert L. Holman Angled facets for display devices
US9325948B2 (en) * 2012-11-13 2016-04-26 Qualcomm Mems Technologies, Inc. Real-time compensation for blue shift of electromechanical systems display devices
US20140132756A1 (en) * 2012-11-13 2014-05-15 Qualcomm Mems Technologies, Inc. Real-time compensation for blue shift of electromechanical systems display devices
US9739925B2 (en) * 2014-01-29 2017-08-22 E Ink Holdings Inc. Light-emitting module
US10823895B2 (en) 2014-01-29 2020-11-03 E Ink Holdings Inc. Light-emitting module
US20150212251A1 (en) * 2014-01-29 2015-07-30 E Ink Holdings Inc. Light-emitting module
US10481334B2 (en) 2015-10-08 2019-11-19 Teramount Ltd. Fiber to chip optical coupler
WO2017062075A1 (en) * 2015-10-08 2017-04-13 Teramount Ltd. A fiber to chip optical coupler
US10564374B2 (en) 2015-10-08 2020-02-18 Teramount Ltd. Electro-optical interconnect platform
US9804334B2 (en) 2015-10-08 2017-10-31 Teramount Ltd. Fiber to chip optical coupler
US11852876B2 (en) 2015-10-08 2023-12-26 Teramount Ltd. Optical coupling
US10585287B2 (en) * 2016-12-20 2020-03-10 Facebook Technologies, Llc Waveguide display with a small form factor, a large field of view, and a large eyebox
US10908408B2 (en) * 2018-01-03 2021-02-02 Boe Technology Group Co., Ltd. Pixel structure, method for manufacturing pixel structure array substrate, and display device
US11585991B2 (en) 2019-02-28 2023-02-21 Teramount Ltd. Fiberless co-packaged optics
US11394468B2 (en) * 2019-03-22 2022-07-19 Source Photonics Inc. System and method for transferring optical signals in photonic devices and method of making the system
US11054566B2 (en) * 2019-10-25 2021-07-06 Facebook Technologies, Llc Display waveguide with a high-index layer
US11460701B2 (en) 2019-10-25 2022-10-04 Meta Platforms Technologies LLC Display waveguide with a high-index portion

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US7236284B2 (en) 2007-06-26
US20060033975A1 (en) 2006-02-16
US20050286113A1 (en) 2005-12-29
US20090219604A1 (en) 2009-09-03
US7388706B2 (en) 2008-06-17
US20060250337A1 (en) 2006-11-09
US20070146376A1 (en) 2007-06-28
US20060284877A1 (en) 2006-12-21
US8643935B2 (en) 2014-02-04
US7839559B2 (en) 2010-11-23
US8264763B2 (en) 2012-09-11
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US7483197B2 (en) 2009-01-27
US7187489B2 (en) 2007-03-06
US20120182595A1 (en) 2012-07-19
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US8416487B2 (en) 2013-04-09
US7355782B2 (en) 2008-04-08
US7830586B2 (en) 2010-11-09
US20110037907A1 (en) 2011-02-17
US7110158B2 (en) 2006-09-19

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