US20030042936A1 - Gate bootstrapped cmos sample-and-hold circuit - Google Patents

Gate bootstrapped cmos sample-and-hold circuit Download PDF

Info

Publication number
US20030042936A1
US20030042936A1 US09/947,989 US94798901A US2003042936A1 US 20030042936 A1 US20030042936 A1 US 20030042936A1 US 94798901 A US94798901 A US 94798901A US 2003042936 A1 US2003042936 A1 US 2003042936A1
Authority
US
United States
Prior art keywords
switch
sample
voltage
boost
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US09/947,989
Other versions
US6525574B1 (en
Inventor
Ruben Herrera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US09/947,989 priority Critical patent/US6525574B1/en
Assigned to TEXAS INSTRUMENTS INCORPORATED reassignment TEXAS INSTRUMENTS INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HERRERA, RUBEN
Application granted granted Critical
Publication of US6525574B1 publication Critical patent/US6525574B1/en
Publication of US20030042936A1 publication Critical patent/US20030042936A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Definitions

  • This invention relates generally to electronic circuits and more specifically to a low distortion and high speed, sample and hold circuit.
  • a sample and hold circuit is a circuit that monitors a signal provides its value at predetermined times, and keeping it constant thereafter.
  • FIG. 1 A sample and hold circuit with boosted clock is shown in FIG. 1.
  • This sample and hold circuit includes a switch 100 coupled to a load capacitor 110 .
  • the load capacitor 110 holds the input voltage V IN at predetermined times which are controlled by the switch 100 .
  • the control of switch 100 is determined by the voltage on the gate of switch 100 .
  • an n type switch 100 is employed. However because an n type switch is chosen, the substrate is connected to ground when a p-well is not available which causes distortion in the sampled signal.
  • a replica circuit 130 shown as a NFET acting as a diode is added in the current path with a current source outputting the current I BIAS This generates a voltage V Gs2 to be placed on the boost capacitor 120 .
  • the voltage generated by diode 130 will follow the threshold voltage variations of switch 100 , as a result of the fact that diode 130 is a replica of switch 100 .
  • the voltage applied to switch 100 will have an additional or boost charge applied to the gate of switch 100 as a result of the voltage across diode 130 .
  • Switch 140 and switch 150 both lead to problems during the operation of these switches.
  • a PMOS switch is used in an n well process, the well of the transistor has to be connected to a voltage higher than a maximum voltage applied to the gate of switch 100 .
  • the clock signal to control switch 140 and switch 150 has to be boosted. Boosting the clock signal results in an increased amount of circuitry and complexity and consequently is costly in both chip area and production costs.
  • the switch 150 is used to turn off switch 100 by connecting the gate of transistor 100 to ground. All these problems create additional constraints on the trade off of speed, precision, and power consumption of the design for the sample and hold circuit.
  • the voltage on switch 140 is equal to voltage V BIAS +V GS2 and this causes problems for switch 140 in that once the voltage on the drain of goes above VDD, the switch 140 could close without the clock signal CK 2 being applied. This is undesirable.
  • Switch 100 may be implemented by an NFET and at a certain speed, the switch 100 represents a specific on resistance value. With higher speeds, the on resistance value of switch 100 should be lowered. To lower the on resistance, a higher physical size of switch 100 is required. However, increasing the size of switch 100 leads to an increased parasitic capacitance which results from a wider channel. However, this higher capacitance to parasitic slows the response in terms of frequency.
  • the present invention provides an increased voltage to the gate of the switch to avoid increasing the size of the switch and effectively lowering the on resistance of the switch. Thus, the speed of the switch and ultimately the speed of the sample and hold circuit is increased.
  • this higher voltage does not affect the switches controlling the gate of the switch.
  • a boost voltage is applied and this boost voltage does not adversely affect the operations of switches used to produce the boost voltage.
  • FIG. 1 a illustrates, a sample and hold circuit
  • FIG. 1 b illustrates timing diagram for the switches of FIG. 1;
  • FIG. 2 a illustrates another sample and hold circuit
  • FIG. 2 b illustrates the timing signals for the sample and hold circuit of FIG. 2 a
  • FIG. 3 a illustrates a sample and hold circuit of the present invention
  • FIG. 3 b illustrates a timing diagram used to control the switches of FIG. 3 a ;
  • FIG. 4 illustrates a simulated distortion at the output of the sample and hold circuit of FIG. 3 a.
  • FIG. 3 a illustrates a sample and hold circuit 390 of the present invention.
  • a PFET 370 is connected with body connected to source; additionally, the gate is connected to receive the input signal from a terminal 371 ; the drain of PFET is connected to ground.
  • the source of PFET 370 is connected to the source of NFET 330 .
  • the source and drain of PFET 370 is a current path with current source 335 .
  • the gate of NFET 330 is connected to the drain of NFET 330 and the body is connected to ground to form a diode.
  • a voltage drop V GS2 is generated across the drain to source of NFET 330 .
  • the drain of NFET 330 is connected to current source 335 , and the current source 335 is connected to voltage VDD.
  • the source of NFET 330 and source of PFET 370 is connected to the source of NFET 300 .
  • the NFET 330 is a replica of NFET 300 preferably made on the same chip as NFET 300 with the same ratio of source drain length.
  • the size of NFET 300 may be the same or different that the NFET 330 .
  • the drain of NFET 330 is connected to switch 350 .
  • the switch 350 is constructed to be normally open except during the presence of clock signal CK 2 .
  • Switch 350 applies the voltage V GS2 to boost capacitor 320 to turn on switch 300 ,
  • the switch 350 is connected to the switch 360 , which is normally open and configured to be closed during the absence of clock signal CK 2 .
  • Switch 360 connects one end of boost capacitor 320 to ground. Both the switches 350 and switch 360 are connected to boost capacitor 320 .
  • the boost capacitor 320 is connected to ground through switch 360 and connected to NFET 330 through switch 350 .
  • boost capacitor 320 receives a boost voltage namely the voltage across NFET 330 or diode 330 equal to voltage VS 2 .
  • the other end of capacitor 320 is connected to the gate of NFET 300 to control the operation of NFET 300 by regulating the voltage applied to the gate.
  • the NFET 300 serves as a switch to connect the input voltage V in with the load capacitor 312 during appropriate periods of time when the load capacitor 312 is to be refreshed with the input voltage. Consequently, switch 300 controls the charging of load capacitor 312 . This period of time is normally considered the sample time.
  • the switch 300 When the switch 300 is open, the capacitor 310 is charged to and holds the input voltage during the hold period of the sample and hold circuit. Additionally, the gate of NFET 300 is connected to switch 340 .
  • the switch 340 connects the voltage V BIAS with the capacitor 320 and switch 300 . This voltage V BIAS , greater than 0 voltages is typically insufficient to turn on switch 300 and maintains switch 300 in an open position. It charges the boost capacitor 320 to the voltage bias. Additionally, the capacitor 320 will raise the voltage on the gate of switch 300 sufficiently to open the switch 300 when the boost voltage is received from switch 350 .
  • Boost capacitor 320 and switch 350 form a boost circuit to control switch 300 .
  • the clock signal CK 1 is high
  • the clock signal ⁇ overscore (CK 2 ) ⁇ is high
  • the clock signal CK 2 is low.
  • the switch 340 closes to charge the boost capacitor 320 and the gate 300 to voltage V BIAS .
  • the voltage V BIAS is sufficiently low to turn off the switch 300 .
  • the switch 350 will be off and switch 360 will be on.
  • CK 1 is off, ⁇ overscore (CK 2 ) ⁇ is high, and CK 2 is low.
  • the switch 360 is closed and switch 340 is open.
  • clock signal CK 1 is low
  • clock signal ⁇ overscore (CK 2 ) ⁇ is low
  • clock signal CK 2 is high.
  • Switch 350 is closed and switches 360 and 340 are open.
  • the voltage across NFET 330 is applied to boost capacitor 320 to provide a higher voltage to the gate of or boost the voltage to capacitor 330 .
  • This voltage on capacitor 320 as a result of the boost voltage is sufficiently high to turn on switch 300 which allows the input signal on terminal 371 to be transferred across load capacitor 310 during the sample period of the sample on hold circuit 390 .
  • two switches have been eliminated namely the switch between the boost capacitor and the gate of NFET 300 and the switch between the gate of NFET 300 and ground. Additionally, boosted clock signals are not needed with the sample and hold circuit 390 of the present invention.
  • the diode 330 compensates for variations of the threshold voltage on the switch 300 and the effective on resistance of the sampling switch 300 is kept substantially constant, minimizing distortion of the sample signal, as illustrated as signal V in .
  • the boost voltage to switch 300 the physical size of switch 300 is reduced. Additionally, since there is no switch for connection between the capacitor 320 and the gate of circuit 300 , high voltages and the false triggering of the switch are avoided.
  • FIG. 4 illustrates a simulation of the circuit of FIG. 3 a implemented in 1833c05 TI CMOS technology.
  • the circuit operates at 640 Msps with 1.2 Vpp sinusoidal inputs at 170 MHz, and the signal is held on the capacitance of 200 ⁇ F.
  • the plot shows a second harmonic of ⁇ 69 dB with the respect to the fundamental at the input frequency being equivalent to 10 bits of resolution.
  • the load capacitor 310 and boost capacitor 320 are preferably an integrated circuit capacitor.
  • This element could be formed from two conductors separated by dielectric material.
  • one or both of the conductors might be polysilicon and another conductive material.
  • One plate could be the transistor body.
  • the dielectric material might be oxide (e.g. S i O 2 ), a nitride, e.g. Si 3 N 4 or combinations of oxides and nitrides for example, ON, ONO, oxy-nitride. Other materials could additionally be utilized.

Landscapes

  • Electronic Switches (AREA)

Abstract

A sample and hold circuit to sample and hold a signal, includes a load capacitor to hold the signal, a switch to control the charging of said load capacitor, and a boost circuit to control the operation of said switch. The boost circuit is directly connected to the switch without another switch between the boost circuit and the switch.

Description

    FIELD OF THE INVENTION
  • This invention relates generally to electronic circuits and more specifically to a low distortion and high speed, sample and hold circuit. [0001]
    • BACKGROUND OF THE INVENTION
  • A sample and hold circuit is a circuit that monitors a signal provides its value at predetermined times, and keeping it constant thereafter. [0002]
  • A sample and hold circuit with boosted clock is shown in FIG. 1. This sample and hold circuit includes a [0003] switch 100 coupled to a load capacitor 110. The load capacitor 110 holds the input voltage VIN at predetermined times which are controlled by the switch 100. The control of switch 100 is determined by the voltage on the gate of switch 100.
  • To have the highest transfer of voltage from V[0004] IN to the load capacitor 110, an n type switch 100 is employed. However because an n type switch is chosen, the substrate is connected to ground when a p-well is not available which causes distortion in the sampled signal.
  • In FIG. 2[0005] a, a replica circuit 130 shown as a NFET acting as a diode is added in the current path with a current source outputting the current IBIAS This generates a voltage VGs2 to be placed on the boost capacitor 120. The voltage generated by diode 130 will follow the threshold voltage variations of switch 100, as a result of the fact that diode 130 is a replica of switch 100. As a consequence of the circuit of FIG. 1, the voltage applied to switch 100 will have an additional or boost charge applied to the gate of switch 100 as a result of the voltage across diode 130. Switch 140 and switch 150 both lead to problems during the operation of these switches. If for example, a PMOS switch is used in an n well process, the well of the transistor has to be connected to a voltage higher than a maximum voltage applied to the gate of switch 100. Alternatively, if NMOS switches are used for switches 140 and 150 then the clock signal to control switch 140 and switch 150 has to be boosted. Boosting the clock signal results in an increased amount of circuitry and complexity and consequently is costly in both chip area and production costs. Additionally, the switch 150 is used to turn off switch 100 by connecting the gate of transistor 100 to ground. All these problems create additional constraints on the trade off of speed, precision, and power consumption of the design for the sample and hold circuit. The voltage on switch 140 is equal to voltage VBIAS+VGS2 and this causes problems for switch 140 in that once the voltage on the drain of goes above VDD, the switch 140 could close without the clock signal CK2 being applied. This is undesirable.
  • An additional problem is the size of [0006] switch 100. Switch 100 may be implemented by an NFET and at a certain speed, the switch 100 represents a specific on resistance value. With higher speeds, the on resistance value of switch 100 should be lowered. To lower the on resistance, a higher physical size of switch 100 is required. However, increasing the size of switch 100 leads to an increased parasitic capacitance which results from a wider channel. However, this higher capacitance to parasitic slows the response in terms of frequency.
  • Consequently, it is required to overcome the problem of using the PMOS switch with the n-well process without using the boosted clock signals and overcome the problem of a high-speed operation. [0007]
    • SUMMARY OF THE INVENTION
  • The present invention provides an increased voltage to the gate of the switch to avoid increasing the size of the switch and effectively lowering the on resistance of the switch. Thus, the speed of the switch and ultimately the speed of the sample and hold circuit is increased. [0008]
  • Advantageously, this higher voltage does not affect the switches controlling the gate of the switch. To control the gate of the switch a boost voltage is applied and this boost voltage does not adversely affect the operations of switches used to produce the boost voltage. [0009]
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1[0010] a illustrates, a sample and hold circuit;
  • FIG. 1[0011] b illustrates timing diagram for the switches of FIG. 1;
  • FIG. 2[0012] a illustrates another sample and hold circuit;
  • FIG. 2[0013] b illustrates the timing signals for the sample and hold circuit of FIG. 2a;
  • FIG. 3[0014] a illustrates a sample and hold circuit of the present invention;
  • FIG. 3[0015] b illustrates a timing diagram used to control the switches of FIG. 3a; and
  • FIG. 4 illustrates a simulated distortion at the output of the sample and hold circuit of FIG. 3[0016] a.
    • DETAILED DESCRIPTION OF THE DRAWINGS
  • Various embodiments of the circuit of the present invention is described below in detail. However, it should be appreciated that the present invention provides many applicable inventive concepts which can be embodied in a wide variety of specific contexts. These specific embodiments discussed are merely illustrative of specific ways to make and use the invention and not limit the scope of the invention. [0017]
  • The present invention will be described with reference to a number of specific embodiments. Various ones of these embodiments provide a variety of solutions to the problems outlined above. [0018]
  • FIG. 3[0019] a illustrates a sample and hold circuit 390 of the present invention. As illustrated, a PFET 370 is connected with body connected to source; additionally, the gate is connected to receive the input signal from a terminal 371; the drain of PFET is connected to ground. The source of PFET 370 is connected to the source of NFET 330. The source and drain of PFET 370 is a current path with current source 335. As the input voltage Vin increases, the voltage across source to drain of PFET 370 correspondingly increases. The gate of NFET 330 is connected to the drain of NFET 330 and the body is connected to ground to form a diode. As current flows from the drain to the source of NFET 330, a voltage drop VGS2 is generated across the drain to source of NFET 330. The drain of NFET 330 is connected to current source 335, and the current source 335 is connected to voltage VDD. The source of NFET 330 and source of PFET 370 is connected to the source of NFET 300. The NFET 330 is a replica of NFET 300 preferably made on the same chip as NFET 300 with the same ratio of source drain length. The size of NFET 300 may be the same or different that the NFET 330. The drain of NFET 330 is connected to switch 350. The switch 350 is constructed to be normally open except during the presence of clock signal CK2. Switch 350 applies the voltage VGS2 to boost capacitor 320 to turn on switch 300, The switch 350 is connected to the switch 360, which is normally open and configured to be closed during the absence of clock signal CK2. Switch 360 connects one end of boost capacitor 320 to ground. Both the switches 350 and switch 360 are connected to boost capacitor 320. The boost capacitor 320 is connected to ground through switch 360 and connected to NFET 330 through switch 350. When switch 350 is closed, boost capacitor 320 receives a boost voltage namely the voltage across NFET 330 or diode 330 equal to voltage VS2. Additionally, the other end of capacitor 320 is connected to the gate of NFET 300 to control the operation of NFET 300 by regulating the voltage applied to the gate. The NFET 300 serves as a switch to connect the input voltage Vin with the load capacitor 312 during appropriate periods of time when the load capacitor 312 is to be refreshed with the input voltage. Consequently, switch 300 controls the charging of load capacitor 312. This period of time is normally considered the sample time. When the switch 300 is open, the capacitor 310 is charged to and holds the input voltage during the hold period of the sample and hold circuit. Additionally, the gate of NFET 300 is connected to switch 340. The switch 340 connects the voltage VBIAS with the capacitor 320 and switch 300. This voltage VBIAS, greater than 0 voltages is typically insufficient to turn on switch 300 and maintains switch 300 in an open position. It charges the boost capacitor 320 to the voltage bias. Additionally, the capacitor 320 will raise the voltage on the gate of switch 300 sufficiently to open the switch 300 when the boost voltage is received from switch 350. Boost capacitor 320 and switch 350 form a boost circuit to control switch 300.
  • In operation, during the first period of time [0020] 380, the clock signal CK1 is high, the clock signal {overscore (CK2)} is high, and the clock signal CK2 is low. The switch 340 closes to charge the boost capacitor 320 and the gate 300 to voltage VBIAS. The voltage VBIAS is sufficiently low to turn off the switch 300. During this period of time, the switch 350 will be off and switch 360 will be on.
  • During a second period of [0021] time 382, CK1 is off, {overscore (CK2)} is high, and CK2 is low. Thus, the switch 360 is closed and switch 340 is open. During the third period of time 384, clock signal CK1 is low, clock signal {overscore (CK2)} is low, and clock signal CK2 is high. Switch 350 is closed and switches 360 and 340 are open. The voltage across NFET 330 is applied to boost capacitor 320 to provide a higher voltage to the gate of or boost the voltage to capacitor 330. This voltage on capacitor 320 as a result of the boost voltage is sufficiently high to turn on switch 300 which allows the input signal on terminal 371 to be transferred across load capacitor 310 during the sample period of the sample on hold circuit 390. Comparing FIG. 3 with either FIG. 1 or FIG. 2, two switches have been eliminated namely the switch between the boost capacitor and the gate of NFET 300 and the switch between the gate of NFET 300 and ground. Additionally, boosted clock signals are not needed with the sample and hold circuit 390 of the present invention. The diode 330 compensates for variations of the threshold voltage on the switch 300 and the effective on resistance of the sampling switch 300 is kept substantially constant, minimizing distortion of the sample signal, as illustrated as signal Vin. By implementation of the boost voltage to switch 300, the physical size of switch 300 is reduced. Additionally, since there is no switch for connection between the capacitor 320 and the gate of circuit 300, high voltages and the false triggering of the switch are avoided.
  • FIG. 4 illustrates a simulation of the circuit of FIG. 3[0022] a implemented in 1833c05 TI CMOS technology. The circuit operates at 640 Msps with 1.2 Vpp sinusoidal inputs at 170 MHz, and the signal is held on the capacitance of 200 ƒF. The plot shows a second harmonic of −69 dB with the respect to the fundamental at the input frequency being equivalent to 10 bits of resolution.
  • The [0023] load capacitor 310 and boost capacitor 320 are preferably an integrated circuit capacitor. This element could be formed from two conductors separated by dielectric material. As an example, one or both of the conductors might be polysilicon and another conductive material. One plate could be the transistor body. The dielectric material might be oxide (e.g. SiO2), a nitride, e.g. Si3N4 or combinations of oxides and nitrides for example, ON, ONO, oxy-nitride. Other materials could additionally be utilized.

Claims (7)

1. A sample and hold circuit to sample and hold a signal, comprising:
a load capacitor to hold the signal;
a switch to control the charging of said load capacitor; and
a boost circuit to control the operation of said switch:
wherein said boost circuit is directly connected to said switch without another switch between said boost circuit and said switch
2. A sample and hold circuit as in claim 1, wherein said switch is a NFET including a gate.
3. A sample and hold circuit as in claim 2, wherein said gate is turned off by a bias voltage greater than zero volts.
4. A sample and hold circuit as in claim 2, wherein said switch is controlled by maintaining a positive voltage on said gate.
5. A sample and hold circuit as in claim 1, wherein said boost circuit includes a boost capacitor.
6. A sample and hold circuit as in claim 5, wherein said boost capacitor is switched to ground before a bias voltage is applied to said capacitor.
7. A sample and hold circuit as in claim 5, wherein said boost capacitor receives a boost voltage from a voltage across a diode.
US09/947,989 2001-09-06 2001-09-06 Gate bootstrapped CMOS sample-and-hold circuit Expired - Lifetime US6525574B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/947,989 US6525574B1 (en) 2001-09-06 2001-09-06 Gate bootstrapped CMOS sample-and-hold circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/947,989 US6525574B1 (en) 2001-09-06 2001-09-06 Gate bootstrapped CMOS sample-and-hold circuit

Publications (2)

Publication Number Publication Date
US6525574B1 US6525574B1 (en) 2003-02-25
US20030042936A1 true US20030042936A1 (en) 2003-03-06

Family

ID=25487089

Family Applications (1)

Application Number Title Priority Date Filing Date
US09/947,989 Expired - Lifetime US6525574B1 (en) 2001-09-06 2001-09-06 Gate bootstrapped CMOS sample-and-hold circuit

Country Status (1)

Country Link
US (1) US6525574B1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102761337A (en) * 2011-04-27 2012-10-31 Nxp股份有限公司 Tracking and hold operations for analog-to-digital converter
WO2012170634A1 (en) * 2011-06-07 2012-12-13 Microchip Technology Incorporated Distributed bootstrap switch
US20130049847A1 (en) * 2011-08-31 2013-02-28 Analog Devices, Inc. Bootstrapping techniques for control of cmos transistor switches
EP4106198A1 (en) * 2021-06-18 2022-12-21 Socionext Inc. Sampling switch circuits
EP4106197A1 (en) * 2021-06-18 2022-12-21 Socionext Inc. Sampling switch circuits

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6693479B1 (en) * 2002-06-06 2004-02-17 Analog Devices, Inc. Boost structures for switched-capacitor systems
US8035626B2 (en) 2002-11-29 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Current driving circuit and display device using the current driving circuit
JP4663327B2 (en) 2003-02-28 2011-04-06 株式会社半導体エネルギー研究所 Semiconductor device
US20050079132A1 (en) * 2003-04-08 2005-04-14 Xingwu Wang Medical device with low magnetic susceptibility
US20050244337A1 (en) * 2003-04-08 2005-11-03 Xingwu Wang Medical device with a marker
US20050155779A1 (en) * 2003-04-08 2005-07-21 Xingwu Wang Coated substrate assembly
US20050025797A1 (en) * 2003-04-08 2005-02-03 Xingwu Wang Medical device with low magnetic susceptibility
US20050261763A1 (en) * 2003-04-08 2005-11-24 Xingwu Wang Medical device
US20050278020A1 (en) * 2003-04-08 2005-12-15 Xingwu Wang Medical device
US20050240100A1 (en) * 2003-04-08 2005-10-27 Xingwu Wang MRI imageable medical device
EP1494357B1 (en) * 2003-07-03 2006-09-13 STMicroelectronics S.r.l. Boosted sampling circuit and relative method of driving
US20070027532A1 (en) * 2003-12-22 2007-02-01 Xingwu Wang Medical device
JP4128545B2 (en) * 2004-05-20 2008-07-30 富士通株式会社 Sampling switch
US7453291B2 (en) * 2004-09-09 2008-11-18 The Regents Of The University Of California Switch linearized track and hold circuit for switch linearization
EP1821313A1 (en) * 2006-02-17 2007-08-22 Sicon Semiconductor AB Track and hold circuit
US20090039924A1 (en) * 2007-08-09 2009-02-12 Alfio Zanchi Systems and methods for reducing distortion in semiconductor based sampling systems
US8963904B2 (en) * 2010-03-22 2015-02-24 Apple Inc. Clock feedthrough and crosstalk reduction method
US8248283B2 (en) 2010-06-11 2012-08-21 Texas Instruments Incorporated Multi-channel SAR ADC
US8115518B1 (en) * 2010-08-16 2012-02-14 Analog Devices, Inc. Integrated circuit for reducing nonlinearity in sampling networks
US8493255B2 (en) * 2011-02-24 2013-07-23 Texas Instruments Incorporated High speed, high voltage multiplexer
US8723556B2 (en) * 2011-06-08 2014-05-13 Linear Technology Corporation System and methods to improve the performance of semiconductor based sampling system
TWI511461B (en) * 2011-06-08 2015-12-01 Linear Techn Inc System and methods to improve the performance of semiconductor based sampling system (1)
US9690315B2 (en) * 2011-11-22 2017-06-27 Raytheon Company Constant input current filter for power supplies and related system and method
US9065437B2 (en) * 2013-04-29 2015-06-23 Mediatek Singapore Pte. Ltd. Circuit for driving high-side transistor utilizing voltage boost circuits
CN103762986A (en) * 2014-01-16 2014-04-30 四川和芯微电子股份有限公司 Sampling hold switch circuit
CN103997326A (en) * 2014-06-09 2014-08-20 上海华力微电子有限公司 Bootstrap switching circuit with constant on resistance
US9419639B1 (en) * 2015-09-23 2016-08-16 Qualcomm Incorporated Low distortion sample and hold switch
US10084466B1 (en) * 2017-12-28 2018-09-25 Texas Instruments Incorporated Top plate sampling circuit including input-dependent dual clock boost circuits
TWI694729B (en) * 2018-06-19 2020-05-21 瑞昱半導體股份有限公司 Switching circuit
US10566892B1 (en) * 2019-02-06 2020-02-18 Dialog Semiconductor (Uk) Limited Power stage overdrive extender for area optimization and operation at low supply voltage
TWI703822B (en) * 2019-10-08 2020-09-01 瑞昱半導體股份有限公司 Bootstrapped switch
CN112737553B (en) * 2019-10-14 2024-06-18 瑞昱半导体股份有限公司 Boot strap type switch

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084634A (en) * 1990-10-24 1992-01-28 Burr-Brown Corporation Dynamic input sampling switch for CDACS
US6052000A (en) * 1997-04-30 2000-04-18 Texas Instruments Incorporated MOS sample and hold circuit
US6215348B1 (en) * 1997-10-01 2001-04-10 Jesper Steensgaard-Madsen Bootstrapped low-voltage switch
US5945872A (en) * 1997-11-06 1999-08-31 Analog Devices, Inc. Two-phase boosted CMOS switch drive technique and circuit
JP3566060B2 (en) * 1998-01-29 2004-09-15 富士通株式会社 Semiconductor device
US6310565B1 (en) * 2000-02-03 2001-10-30 Lucent Technologies Inc. Sampling switch having an independent “on” impedance
US6323697B1 (en) * 2000-06-06 2001-11-27 Texas Instruments Incorporated Low distortion sample and hold circuit

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102761337A (en) * 2011-04-27 2012-10-31 Nxp股份有限公司 Tracking and hold operations for analog-to-digital converter
EP2518730A1 (en) * 2011-04-27 2012-10-31 Nxp B.V. Tracking and hold operations for an analog-to-digital converter
KR20140035958A (en) * 2011-06-07 2014-03-24 마이크로칩 테크놀로지 인코포레이티드 Distributed bootstrap switch
US20130009797A1 (en) * 2011-06-07 2013-01-10 Microchip Technology Incorporated Distributed Bootstrap Switch
US8674863B2 (en) * 2011-06-07 2014-03-18 Microchip Technology Incorporated Distributed bootstrap switch
WO2012170634A1 (en) * 2011-06-07 2012-12-13 Microchip Technology Incorporated Distributed bootstrap switch
CN103703685A (en) * 2011-06-07 2014-04-02 密克罗奇普技术公司 Distributed bootstrap switch
KR101888103B1 (en) 2011-06-07 2018-08-14 마이크로칩 테크놀로지 인코포레이티드 Distributed bootstrap switch
US20130049847A1 (en) * 2011-08-31 2013-02-28 Analog Devices, Inc. Bootstrapping techniques for control of cmos transistor switches
EP4106198A1 (en) * 2021-06-18 2022-12-21 Socionext Inc. Sampling switch circuits
EP4106197A1 (en) * 2021-06-18 2022-12-21 Socionext Inc. Sampling switch circuits
US11689200B2 (en) 2021-06-18 2023-06-27 Socionext Inc. Sampling switch circuits
US12009832B2 (en) 2021-06-18 2024-06-11 Socionext Inc. Sampling switch circuits

Also Published As

Publication number Publication date
US6525574B1 (en) 2003-02-25

Similar Documents

Publication Publication Date Title
US6525574B1 (en) Gate bootstrapped CMOS sample-and-hold circuit
US6323697B1 (en) Low distortion sample and hold circuit
US4825099A (en) Feedback-controlled current output driver having reduced current surge
US5206544A (en) CMOS off-chip driver with reduced signal swing and reduced power supply disturbance
US5111072A (en) Sample-and-hold switch with low on resistance and reduced charge injection
US5422583A (en) Back gate switched sample and hold circuit
KR20010071855A (en) A high-voltage level tolerant transistor circuit
KR100471737B1 (en) Output circuits, circuits to reduce leakage currents, methods for selectively switching transistors and semiconductor memory
US6104229A (en) High voltage tolerable input buffer and method for operating same
US5239211A (en) Output buffer circuit
US20090085648A1 (en) Sampling Device And Circuit Having A Single Voltage Supply
KR100546034B1 (en) Voltage Regulator Circuit for Smart Card Integrated Circuits
US4550264A (en) Boosting circuit
US4317051A (en) Clock generator (buffer) circuit
US6781434B2 (en) Low charge-dump transistor switch
EP0996226B1 (en) Voltage comparator
US5495187A (en) CMOS input with Vcc compensated dynamic threshold
US20020101274A1 (en) Voltage level translator systems and methods
US4250408A (en) Clock pulse amplifier and clipper
US5164616A (en) Integrated sample and hold circuit with feedback circuit to increase storage time
EP1292031A2 (en) Integrated circuit and method of adjusting capacitance of a node of an integrated circuit
JP3379601B2 (en) Semiconductor integrated circuit device
JP2000132975A (en) Semiconductor device and memory module including the same
EP4550665B1 (en) High voltage tolerant bootstrap switch
US20050041343A1 (en) Voltage limiting semiconductor pass gate circuit

Legal Events

Date Code Title Description
AS Assignment

Owner name: TEXAS INSTRUMENTS INCORPORATED, TEXAS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:HERRERA, RUBEN;REEL/FRAME:012642/0218

Effective date: 20010921

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12