US20030008998A1 - Interlayer dielectric film - Google Patents

Interlayer dielectric film Download PDF

Info

Publication number
US20030008998A1
US20030008998A1 US10128296 US12829602A US20030008998A1 US 20030008998 A1 US20030008998 A1 US 20030008998A1 US 10128296 US10128296 US 10128296 US 12829602 A US12829602 A US 12829602A US 20030008998 A1 US20030008998 A1 US 20030008998A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
film
dielectric
organic
interlayer
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10128296
Inventor
Nobuo Aoi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/312Organic layers, e.g. photoresist
    • H01L21/3121Layers comprising organo-silicon compounds
    • H01L21/3122Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/312Organic layers, e.g. photoresist
    • H01L21/3121Layers comprising organo-silicon compounds
    • H01L21/3122Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H01L21/3124Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005Formation and after-treatment of dielectrics
    • H01L2221/1042Formation and after-treatment of dielectrics the dielectric comprising air gaps
    • H01L2221/1047Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12361All metal or with adjacent metals having aperture or cut
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12542More than one such component
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane

Abstract

An interlayer dielectric film is made from an organic/inorganic hybrid film. The organic/inorganic hybrid film has a main chain in which a first site of siloxane and a second site of an organic molecule are alternately bonded to each other.

Description

    BACKGROUND OF THE INVENTION
  • [0001]
    The present invention relates to an interlayer dielectric film with a low dielectric constant capable of preventing diffuision of copper, that is, a material for interconnects.
  • [0002]
    In an interlayer dielectric film of a VLSI, reduction of design rule has led to a problem of increase of parasitic capacitance between adjacent interconnects, and it is significant to lower the dielectric constant of the interlayer dielectric film in order to reduce the parasitic capacitance between interconnects.
  • [0003]
    As a low dielectric interlayer dielectric film, a siloxane film, such as a methylsilsesquioxane (MSQ) film (with a dielectric constant of approximately 2.9) and a hydrogenated silsesquioxane (HSQ) film (with a dielectric constant of approximately 3.0), including SiO2 as a principal constituent has been proposed. FIG. 14 shows the chemical structure of methylsilsesquioxane, that is, an example of conventional organic siloxane in which an organic group is bonded to siloxane. In FIG. 14, a methyl group is bonded to a Si atom included in the main chain of the siloxane.
  • [0004]
    Alternatively, an organic polymer film including an aromatic compound polymer, such as a polyimide derivative, a polyalyl ether derivative, a polyquinoline derivative or a polyparaxylene derivative, having a low dielectric constant and high heat resistance has been proposed as the low dielectric interlayer dielectric film. Such an organic polymer film has a low dielectric constant because it includes carbon as a principal constituent, and hence, the polarizability of molecules included in the film is lower than that of a conventionally used interlayer dielectric film including SiO2 as a principal constituent.
  • [0005]
    Therefore, such an organic polymer film is regarded as a promising low dielectric interlayer dielectric film.
  • [0006]
    However, when copper is used as the material for interconnects, copper ions are diffused by an electric field or heat into such a low dielectric interlayer dielectric film. Therefore, the breakdown voltage of the interlayer dielectric film is disadvantageously lowered when it is used for a long period of time. When the breakdown voltage of the interlayer dielectric film is lowered, dielectric failure is caused, which may result in failure of the operation of the VLSI.
  • SUMMARY OF THE INVENTION
  • [0007]
    In consideration of the aforementioned conventional problem, an object of the invention is preventing copper used as the material for interconnects from diffusing into an interlayer dielectric film so as to prevent the breakdown voltage of the interlayer dielectric film from lowering over a long period of use.
  • [0008]
    The mechanism of the diffusion of copper into an interlayer dielectric film has not been completely solved. Probably, copper atoms included in the interconnect material are ionized to dissolve in the interlayer dielectric film, so that the copper ions dissolved in the interlayer dielectric film can drift in the interlayer dielectric film due to an electric field.
  • [0009]
    Also, the interlayer dielectric film attains a low dielectric constant by reducing the density of the interlayer dielectric film, for example, by making it porous. The mechanism of the drift of copper ions in an interlayer dielectric film with low density is different from that of the drift of copper ions in a conventional dense interlayer dielectric film. The interaction between molecules included in the interlayer dielectric film and copper ions is probably dominant in the interlayer dielectric film with low density. Specifically, the interaction between molecules included in a polymer film is smaller in the interlayer dielectric film with low density than in a dense interlayer dielectric film (that is, a bulk solid). Therefore, the degeneracy of electron orbitals between the molecules is solved, so that the molecules included in the polymer film can behave as if they were individual molecules also in the interlayer dielectric film. Furthermore, copper ions drift in the interlayer dielectric film dominantly through the interaction between the molecules and the copper ions. Accordingly, drift paths of the copper ions are along the surfaces of the molecules included in the interlayer dielectric film.
  • [0010]
    The present invention was devised on the basis of these findings and utilizes the interaction between copper ions and siloxane larger than that between copper ions and an organic molecule.
  • [0011]
    Specifically, the first interlayer dielectric film of the invention comprises an organic/inorganic hybrid film having a main chain in which a first site of siloxane and a second site of an organic molecule are alternately bonded to each other.
  • [0012]
    The second interlayer dielectric film of the invention comprises an organic/inorganic hybrid film composed of a plurality of first sites of siloxane and a plurality of second sites of an organic molecule, and the plurality of first sites are bonded to the plurality of second sites alone and the plurality of second sites are bonded to the plurality of first sites alone.
  • [0013]
    The third interlayer dielectric film of the invention comprises an organic/inorganic hybrid film composed of a plurality of first sites of siloxane and a plurality of second sites of an organic molecule, and each of the plurality of first sites is surrounded with the plurality of second sites.
  • [0014]
    The fourth interlayer dielectric film of the invention comprises an organic/inorganic hybrid film composed of a plurality of first sites of siloxane and a plurality of second sites of an organic molecule, and each of the plurality of second sites is surrounded with the plurality of first sites.
  • [0015]
    In any of the first through fourth interlayer dielectric films, the potential energy required for, namely, the barrier height to be cleared by, copper ions drifting in the organic/inorganic hybrid film from a copper film used as an interconnect material and moving along the main chain of the polymer included in the organic/inorganic hybrid film is much larger than the potential energy required for, namely, the barrier height to be cleared by, copper ions moving along the main chain of a polymer included in a conventional interlayer dielectric film. Therefore, the copper ions are easily trapped by the first sites of siloxane in the interlayer dielectric film. Accordingly, the copper ions are minimally diffused into the interlayer dielectric film. As a result, the breakdown voltage of the interlayer dielectric film of any of the first through fourth interlayer dielectric films is minimally lowered even when used for a long period of time.
  • [0016]
    In any of the first through fourth interlayer dielectric films, pores are preferably dispersed in the organic/inorganic hybrid film.
  • [0017]
    Thus, the dielectric constant of the first, second, third or fourth interlayer dielectric film can be lowered.
  • [0018]
    The fifth interlayer dielectric film of the invention comprises a plurality of first sites of siloxane and a plurality of second sites of an organic molecule, and the plurality of second sites together form an organic polymer film and the plurality of first sites are dispersed in the organic polymer film.
  • [0019]
    In the fifth interlayer dielectric film, the first site of siloxane may or may not be bonded to the second site of an organic molecule.
  • [0020]
    In the fifth interlayer dielectric film, the first sites of siloxane are dispersed in the organic polymer film made from the organic molecules. Therefore, copper interconnects disposed with the interlayer dielectric film sandwiched therebetween are never electrically connected to each other through the first sites of siloxane. Accordingly, copper ions drifting from the copper interconnects into the interlayer dielectric film are easily trapped by the first sites of siloxane, and hence the copper ions are minimally diffused into the interlayer dielectric film. As a result, the breakdown voltage of the fifth interlayer dielectric film is minimally lowered even when used for a long period of time.
  • [0021]
    In the fifth interlayer dielectric film, a largest distance between the plurality of first sites is preferably smaller than a distance between a pair of copper interconnects disposed with the organic polymer film sandwiched therebetween.
  • [0022]
    Thus, the copper interconnects adjacent to each other with the interlayer dielectric film sandwiched therebetween can be definitely prevented from being electrically connected through the first sites of siloxane. Therefore, copper ions drifting from one of the adjacent copper interconnects into the interlayer dielectric film minimally pass by the vicinity of the first sites of siloxane to reach the other copper interconnect. Accordingly, the copper ions drifting from one copper interconnect can be prevented from reaching the other copper interconnect, and hence, the copper interconnects can be prevented from being electrically connected to each other through the copper ions.
  • [0023]
    In the fifth interlayer dielectric film, pores are preferably dispersed in the organic polymer film.
  • [0024]
    Thus, the dielectric constant of the fifth interlayer dielectric film can be lowered.
  • [0025]
    In any of the first through fifth interlayer dielectric films, the first site is preferably represented by the following general formula (1):
    Figure US20030008998A1-20030109-C00001
  • [0026]
    wherein R1, R2 and R3 are an oxygen atom or an organic group.
  • [0027]
    Thus, the copper ions can be definitely prevented from passing by the vicinity of the first sites of siloxane to diffuse into the interlayer dielectric film.
  • [0028]
    Alternatively, in any of the first through fifth interlayer dielectric films, the first site is preferably represented by the following general formula (2):
    Figure US20030008998A1-20030109-C00002
  • [0029]
    wherein R is an organic group; and R1 and R2 are an oxygen atom or an organic group, which is selected from the group consisting of an alkyl group, an aryl group and an aryl group.
  • [0030]
    Thus, the copper ions can be definitely prevented from passing by the vicinity of the first sites of siloxane to diffuise into the interlayer dielectric film.
  • [0031]
    In any of the first through fifth interlayer dielectric films, the second site is preferably polyimide, polyamide, polyimidazole, polyoxazole, polyphenylene, polyarylene, polyaryl ether, polyalkane or a fluorinated polymer of any of these polymers.
  • [0032]
    The sixth interlayer dielectric film of the invention comprises a multi-layer film, in which a first layer of siloxane and a second layer of an organic molecule are alternately stacked on each other.
  • [0033]
    In the sixth interlayer dielectric film, a lower copper interconnect and an upper copper interconnect disposed below and on the interlayer dielectric film are never connected to each other through the first layer of siloxane or the second layer of the organic molecule. Therefore, copper ions drifting from the lower or upper copper interconnect into the interlayer dielectric film are easily trapped by siloxane included in the first layer. Accordingly, the copper ions are minimally diffused into the interlayer dielectric film, and hence, the lower copper interconnect and the upper copper interconnect can be prevented from being electrically connected to each other through the copper ions.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0034]
    [0034]FIG. 1 is a diagram for showing the molecular structure of an organic/inorganic hybrid film corresponding to an interlayer dielectric film according to Embodiment 1 of the invention;
  • [0035]
    [0035]FIG. 2 is a conceptual diagram for showing the molecular structure of the organic/inorganic hybrid film corresponding to the interlayer dielectric film of Embodiment 1;
  • [0036]
    [0036]FIG. 3 is a diagram for roughly showing the molecular structure of a region A of FIG. 2;
  • [0037]
    [0037]FIG. 4 is a schematic diagram for showing the molecular structure of the region A of FIG. 2;
  • [0038]
    [0038]FIG. 5 is a diagram for three-dimensionally showing a bond between a first site composed of siloxane and a second site composed of an organic molecule in the organic/inorganic hybrid film of Embodiment 1;
  • [0039]
    [0039]FIG. 6 is a diagram for two-dimensionally showing the bond between the first site composed of siloxane and the second site composed of the organic molecule in the organic/inorganic hybrid film of Embodiment 1;
  • [0040]
    [0040]FIG. 7(a) is a characteristic diagram for showing the relationship between a coordinate axis corresponding to a distance from the center of the main chain of a polymer included in the organic/inorganic hybrid film of Embodiment 1 and the potential energy required for movement of a copper ion and FIG. 7(b) is a schematic diagram of the main chain of the polymer of the organic/inorganic hybrid film of Embodiment 1;
  • [0041]
    [0041]FIG. 8(a) is a characteristic diagram for showing the relationship between a coordinate axis corresponding to a distance from the center of the main chain of a polymer included in a conventional organic polymer film and the potential energy required for movement of a copper ion and FIG. 8(b) is a schematic diagram of the main chain of the polymer of the conventional organic polymer film;
  • [0042]
    [0042]FIG. 9(a) is a characteristic diagram for showing the relationship between a coordinate axis corresponding to a distance from the center of the main chain of a polymer included in a conventional ladder type siloxane film and the potential energy required for movement of a copper ion and FIG. 9(b) is a schematic diagram of the main chain of the polymer of the conventional ladder type siloxane film;
  • [0043]
    [0043]FIG. 10 is a characteristic diagram for showing the height of a barrier and the drift rate of copper ions in the organic/inorganic hybrid film of Embodiment 1, the conventional organic polymer film and the conventional siloxane film;
  • [0044]
    FIGS. 11(a), 11(b) and 11(c) are diagrams for showing chemical reactions occurring in forming the organic/inorganic hybrid film of Embodiment 1;
  • [0045]
    [0045]FIG. 12 is a cross-sectional view of an interlayer dielectric film according to Embodiment 2 of the invention;
  • [0046]
    [0046]FIG. 13 is a cross-sectional view of an interlayer dielectric film according to Embodiment 3 of the invention; and
  • [0047]
    [0047]FIG. 14 is a diagram of general formula representing the chemical structure of conventional organic siloxane.
  • DETAILED DESCRIPTION OF THE INVENTION
  • [0048]
    Embodiment 1
  • [0049]
    An interlayer dielectric film and a method for forming the same according to Embodiment 1 of the invention will now be described with reference to the accompanying drawings.
  • [0050]
    [0050]FIG. 1 shows the molecular structure of an organic/inorganic hybrid film corresponding to the interlayer dielectric film of Embodiment 1. In FIG. 1, a indicates a first site composed of siloxane, b indicates a second site composed of an organic molecule and c indicates a free volume.
  • [0051]
    [0051]FIG. 2 is a conceptual diagram for showing the molecular structure of the organic/inorganic hybrid film corresponding to the interlayer dielectric film of Embodiment 1.
  • [0052]
    [0052]FIG. 3 roughly shows the molecular structure of a region A of FIG. 2, wherein a indicates the first site composed of siloxane, b indicates the second site composed of the organic molecule and c indicates the free volume.
  • [0053]
    [0053]FIG. 4 schematically shows the molecular structure of the region A of FIG. 2.
  • [0054]
    [0054]FIG. 5 three-dimensionally shows a bond between the first site a composed of siloxane and the second site b composed of the organic molecule in the organic/inorganic hybrid film of Embodiment 1.
  • [0055]
    [0055]FIG. 6 two-dimensionally shows the bond between the first site a composed of siloxane and the second site b composed of the organic molecule in the organic/inorganic hybrid film of Embodiment 1.
  • [0056]
    As shown in FIGS. 1, 3, 5 and 6, the organic/inorganic hybrid film of Embodiment 1 includes a plurality of first site a each composed of siloxane, a plurality of second sites b each composed of the organic molecule and a plurality of third sites c disposed dispersedly.
  • [0057]
    As a first characteristic of the organic/inorganic hybrid film of Embodiment 1, the first sites a each composed of siloxane and the second sites b each composed of the organic molecule together forming a main chain are alternately bonded to each other. As a second characteristic, the first site a is bonded to the second site b alone and the second site b is bonded to the first site a alone. As a third characteristic, each of the first sites a is surrounded with the plural second sites b. As a fourth characteristic, each of the second sites b is surrounded with the plural first sites a.
  • [0058]
    Although the first sites a and the second sites b are alternately bonded to each other in FIGS. 1, 3, 5 and 6, the first sites a and the second sites b may not be bonded to each other. In other words, the organic/inorganic hybrid film of Embodiment 1 may have the third or fourth characteristic without having the first and second characteristics.
  • [0059]
    [0059]FIG. 7(a) shows the relationship between the coordinate axis (x-axis) corresponding to a distance from the center of the main chain of a polymer included in the organic/inorganic hybrid film of Embodiment 1 and the potential energy required for a copper ion to move along the main chain. FIG. 7(b) is a schematic diagram of the main chain of the polymer included in the organic/inorganic hybrid film of Embodiment 1. As is understood from FIGS. 7(a) and 7(b), the potential energy required for a copper ion to move from the vicinity of an oxygen atom (O) of siloxane (i.e., the first site a) to the vicinity of a carbon atom (C) of the organic molecule (i.e., the second site b) is very high and is specifically approximately 3 kcal/mol. In other words, a barrier to be cleared by the copper ion in moving from the first site a to the second site b is very high. Therefore, the copper ion drifting in the organic/inorganic hybrid film is easily trapped by the first site a.
  • [0060]
    [0060]FIG. 8(a) shows the relationship between the coordinate axis (x-axis) corresponding to a distance from the center of the main chain of a polymer included in a conventional organic polymer film and the potential energy required for a copper ion to move along the main chain. FIG. 8(b) is a schematic diagram of the main chain of the polymer included in the organic polymer film. As is understood from FIGS. 8(a) and 8(b), the potential energy required for a copper ion to move from the vicinity of one carbon atom (C) included in the organic polymer to the vicinity of another carbon atom (C) is low and is specifically approximately 1.3 kcal/mol. Therefore, the copper ion drifting in the organic polymer film is minimally trapped.
  • [0061]
    [0061]FIG. 9(a) shows the relationship between the coordinate axis (x-axis) corresponding to a distance from the center of the main chain of a polymer included in a conventional ladder type siloxane film and the potential energy required for a copper ion to move along the main chain. FIG. 9(b) is a schematic diagram of the main chain of the polymer included in the ladder type siloxane film. As is understood from FIGS. 9(a) and 9(b), the potential energy required for a copper ion to move from the vicinity of an oxygen atom (O) of siloxane to the vicinity of silicon (Si) is low and is specifically approximately 0.5 kcal/mol. Therefore, the copper ion drifting in the ladder type siloxane film is minimally trapped.
  • [0062]
    In FIG. 9(b), when a hydrogen atom bonded to a Si atom is replaced with an organic group, the film is an organic siloxane film. Also in the organic siloxane film, the potential energy required for a copper ion to move from the vicinity of an oxygen atom (O) of siloxane to the vicinity of silicon (Si) is the same as that shown in FIG. 9(b). Therefore, the copper ion drifting in the organic siloxane film is minimally trapped.
  • [0063]
    [0063]FIG. 10 shows the barrier height and the drift rate of copper ions in the organic/inorganic hybrid film of Embodiment 1 shown in FIG. 7(b), the conventional organic polymer film shown in FIG. 8(b) and the conventional siloxane film shown in FIG. 9(b). In the organic polymer film, the data obtained in the experiment are varied. As is understood from FIG. 10, the barrier height for copper ions is large and the drift rate is low in the organic/inorganic hybrid film of Embodiment 1.
  • [0064]
    As is understood from the above description, the potential energy required for, namely, the barrier height to be cleared by, a copper ion moving along the main chain of the polymer included in the organic/inorganic hybrid film of Embodiment 1 is much higher than the potential energy required for, namely, the barrier height to be cleared by, a copper ion moving along the main chain of the organic polymer or the ladder type siloxane. Therefore, the copper ions are easily trapped and difficult to drift in the organic/inorganic hybrid film of Embodiment 1. Accordingly, copper (copper ions) used as the material for interconnects is minimally diffused into the interlayer dielectric film of Embodiment 1. As a result, the breakdown voltage of the interlayer dielectric film is minimally lowered even when used for a long period of time.
  • [0065]
    Now, a method for forming the organic/inorganic hybrid film of Embodiment 1 will be described with reference to FIGS. 11(a) through 11(c).
  • [0066]
    First, 1,6-(bistrichlorosilyl)hexane (a trichlorosilane derivative; a first silane derivative) shown on the left hand side of FIG. 11(a) and methyltrichlorosilane (a second silane derivate) shown on the right hand side of FIG. 11(a) are hydrolyzed in a ratio of 1:1 in an alcohol solution, so as to obtain two silanols as shown in FIG. 11(b).
  • [0067]
    Next, the two silanols are polymerized through a dehydration condensation reaction, so as to give a silanol condensate as shown in FIG. 11(c).
  • [0068]
    Then, a solution including the silanol condensate of FIG. 11(c) is applied on a semiconductor substrate by spin coating and the resultant substrate is annealed. In this manner, the interlayer dielectric film of the organic/inorganic hybrid film having the structure as shown in FIG. 1 in which methylsilsesquioxanes in a cage structure (i.e., the first sites a) are bonded via methylene of hexane (i.e., the second site b) in a network structure is formed.
  • [0069]
    Although the trichlorosilane derivative is used as the first silane derivative in the above-described method for forming the interlayer dielectric film of Embodiment 1, a trialkoxysilane derivative may be used instead.
  • [0070]
    Also, although the silane derivative in which silicon atoms are crosslinked via hexane including six methylene groups is used as the second silane derivative, the number of methylene groups is not specified. Also, an organic molecule other than the methylene groups, such as phenylene, may be used as the crosslinking molecule.
  • [0071]
    Furthermore, any siloxane represented by the following general formula (1) may be widely used as the first site a included in the organic/inorganic hybrid film of Embodiment 1:
    Figure US20030008998A1-20030109-C00003
  • [0072]
    wherein R1, R2 and R3 are an oxygen atom or an organic group.
  • [0073]
    Alternatively, any siloxane represented by the following general formula (2) may be widely used as the first site a included in the organic/inorganic hybrid film of Embodiment 1:
    Figure US20030008998A1-20030109-C00004
  • [0074]
    wherein R is an organic group; and R1 and R2 are an oxygen atom or an organic group, which is selected from the group consisting of an alkyl group, an aryl group and an aryl group.
  • [0075]
    Moreover, polyimide, polyamide, polyimidazole, polyoxazole, polyphenylene, polyarylene, polyaryl ether, polyalkane or a fluorinated polymer of any of these polymers may be widely used as the second site b included in the organic/inorganic hybrid film of Embodiment 1.
  • [0076]
    Embodiment 2
  • [0077]
    An interlayer dielectric film and a method for forming the same according to Embodiment 2 of the invention will now be described with reference to the accompanying drawing.
  • [0078]
    The interlayer dielectric film of Embodiment 2 includes a plurality of first sites a each composed of siloxane and a plurality of second sites b each composed of an organic molecule. The plural second sites b together form an organic polymer film, in which the plural first sites a and a plurality of holes c are dispersed. In this case, the first site a composed of siloxane may be or may not be bonded to the second site b composed of the organic molecule.
  • [0079]
    [0079]FIG. 12 shows the cross-sectional structure of the interlayer dielectric film of Embodiment 2. As shown in FIG. 12, in the interlayer dielectric film formed on a semiconductor substrate 10, a plurality of silica fine particles 12 each corresponding to the first site a and a plurality of holes 13 are dispersed in an organic polymer film 11 formed from the plural second sites b.
  • [0080]
    Since the silica fine particles 12 of siloxane are dispersed in the organic polymer film 11 of the organic molecules in the interlayer dielectric film of Embodiment 2, copper interconnects 14 adjacent to each other are never connected through the silica fine particles 12 of siloxane. Therefore, copper ions drifting in the organic polymer film 11 from the copper interconnect 14 are trapped by the first sites a of siloxane and hence are minimally diffused into the organic polymer film 11. Accordingly, the copper interconnects 14 adjacent to each other can be prevented from being electrically connected through the copper ions.
  • [0081]
    In this case, the largest distance between the first sites a of siloxane forming the silica fine particles 12 is preferably smaller than the distance between the copper interconnects 14 adjacent to each other. Thus, the copper interconnects 14 adjacent to each other can be definitely prevented from being electrically connected through the first sites a of siloxane, and therefore, copper ions drifting in the organic polymer film 11 from one copper interconnect 14 can never pass by the vicinity of the first sites a of siloxane to reach the other adjacent copper interconnect 14. Accordingly, the copper ions drifting from one copper interconnect 14 can be prevented from reaching the other copper interconnect 14, and hence, the dielectric property of the interlayer dielectric film is never degraded.
  • [0082]
    Now, the method for forming the interlayer dielectric film of Embodiment 2 will be described.
  • [0083]
    Silica fine particles with an average particle size of 10 nm are dispersed in, for example, a polymer solution of the polyalyl ether family. Then, the solution in which the silica fine particles are dispersed is applied on a semiconductor substrate by spin coating, and the resultant semiconductor substrate is annealed. In this manner, the interlayer dielectric film as shown in FIG. 12 in which the plural silica fine particles 12 and the plural holes 13 are dispersed in the organic polymer film 11 formed from the plural second sites b can be obtained.
  • [0084]
    Although the polymer solution of the polyalyl ether family in which the silica fine particles are dispersed is used for forming the interlayer dielectric film in Embodiment 2, the interlayer dielectric film may be formed by using a solution including a silanol condensate obtained through hydrolysis and dehydration condensation of 1,6-(bistrichlorosily)hexane (first silane derivative) and methyltrichlorosilane as in Embodiment 1.
  • [0085]
    As the first site a included in the organic/inorganic hybrid film of Embodiment 2, any siloxane represented by the above-described general formula (1) or (2) may be widely used. As the second site b, polyimide, polyamide, polyimidazole, polyoxazole, polyphenylene, polyarylene, polyaryl ether, polyalkane or a fluorinated polymer of any of these polymers may be widely used.
  • [0086]
    Embodiment 3
  • [0087]
    An interlayer dielectric film according to Embodiment 3 of the invention will now be described with reference to the accompanying drawing.
  • [0088]
    [0088]FIG. 13 shows the cross-sectional structure of the interlayer dielectric film of Embodiment 3. As shown in FIG. 13, a lower interlayer dielectric film 21 and an upper interlayer dielectric film 22 are successively formed on a semiconductor substrate 20. A lower copper interconnect 23 is buried in the lower interlayer dielectric film 21, and an upper copper interconnect 24 is buried in the upper interlayer dielectric film 22.
  • [0089]
    As shown in FIG. 13, each of the lower and upper interlayer dielectric films 21 and 22 is made from a multi-layer film composed of a first layer d of siloxane and a second layer e of an organic molecule alternately stacked.
  • [0090]
    Since the first layer d of siloxane and the second layer e of the organic molecule are alternately stacked in the interlayer dielectric film of Embodiment 3, the lower copper interconnect 23 and the upper copper interconnect 24 are never electrically connected to each other through the first layer d of siloxane and the second layer e of the organic molecule. Therefore, copper ions drifting from the lower or upper copper interconnect 23 or 24 into the upper interlayer dielectric film 22 are trapped by siloxane included in the first layer d and hence are minimally diffused into the upper interlayer dielectric film 22. Accordingly, the lower copper interconnect 23 and the upper copper interconnect 24 can be prevented from being electrically connected to each other through the copper ions.

Claims (27)

    What is claimed is:
  1. 1. An interlayer dielectric film comprising an organic/inorganic hybrid film having a main chain in which a first site of siloxane and a second site of an organic molecule are alternately bonded to each other.
  2. 2. The interlayer dielectric film of claim 1,
    wherein pores are dispersed in said organic/inorganic hybrid film.
  3. 3. The interlayer dielectric film of claim 1,
    wherein said first site is represented by the following general formula (1):
    Figure US20030008998A1-20030109-C00005
    wherein R1, R2 and R3 are an oxygen atom or an organic group.
  4. 4. The interlayer dielectric film of claim 1,
    wherein said first site is represented by the following general formula (2):
    Figure US20030008998A1-20030109-C00006
    wherein R is an organic group; and R1 and R2 are an oxygen atom or an organic group, which is selected from the group consisting of an alkyl group, an aryl group and an aryl group
  5. 5. The interlayer dielectric film of claim 1,
    wherein said second site is polyimide, polyamide, polyimidazole, polyoxazole, polyphenylene, polyarylene, polyaryl ether, polyalkane or a fluorinated polymer of any of these polymers.
  6. 6. An interlayer dielectric film comprising an organic/inorganic hybrid film composed of a plurality of first sites of siloxane and a plurality of second sites of an organic molecule,
    wherein said first sites are bonded to said second sites alone and said second sites are bonded to said first sites alone.
  7. 7. The interlayer dielectric film of claim 6,
    wherein pores are dispersed in said organic/inorganic hybrid film.
  8. 8. The interlayer dielectric film of claim 6,
    wherein each of said plurality of first sites is represented by the following general formula (1):
    Figure US20030008998A1-20030109-C00007
    wherein R1, R2 and R3 are an oxygen atom or an organic group.
  9. 9. The interlayer dielectric film of claim 6,
    wherein each of said plurality of first sites is represented by the following general formula (2):
    Figure US20030008998A1-20030109-C00008
    wherein R is an organic group; and R1 and R2 are an oxygen atom or an organic group, which is selected from the group consisting of an alkyl group, an aryl group and an aryl group.
  10. 10. The interlayer dielectric film of claim 6,
    wherein each of said plurality of second sites is polyimide, polyamide, polyimidazole, polyoxazole, polyphenylene, polyarylene, polyaryl ether, polyalkane or a fluorinated polymer of any of these polymers.
  11. 11. An interlayer dielectric film comprising an organic/inorganic hybrid film composed of a plurality of first sites of siloxane and a plurality of second sites of an organic molecule,
    wherein each of said plurality of first sites is surrounded with said plurality of second sites.
  12. 12. The interlayer dielectric film of claim 11,
    wherein pores are dispersed in said organic/inorganic hybrid film.
  13. 13. The interlayer dielectric film of claim 11,
    wherein each of said plurality of first sites is represented by the following general formula (1):
    Figure US20030008998A1-20030109-C00009
    wherein R1, R2 and R3 are an oxygen atom or an organic group.
  14. 14. The interlayer dielectric film of claim 11,
    wherein each of said plurality of first sites is represented by the following general formula (2):
    Figure US20030008998A1-20030109-C00010
    wherein R is an organic group; and R1 and R2 are an oxygen atom or an organic group, which is selected from the group consisting of an alkyl group, an aryl group and an aryl group.
  15. 15. The interlayer dielectric film of claim 11,
    wherein each of said plurality of second sites is polyimide, polyamide, polyimidazole, polyoxazole, polyphenylene, polyarylene, polyaryl ether, polyalkane or a fluorinated polymer of any of these polymers.
  16. 16. An interlayer dielectric film comprising an organic/inorganic hybrid film composed of a plurality of first sites of siloxane and a plurality of second sites of an organic molecule,
    wherein each of said plurality of second sites is surrounded with said plurality of first sites.
  17. 17. The interlayer dielectric film of claim 16,
    wherein pores are dispersed in said organic/inorganic hybrid film.
  18. 18. The interlayer dielectric film of claim 16,
    wherein each of said plurality of first sites is represented by the following general formula (1):
    Figure US20030008998A1-20030109-C00011
    wherein R1, R2 and R3 are an oxygen atom or an organic group.
  19. 19. The interlayer dielectric film of claim 16,
    wherein each of said plurality of first sites is represented by the following general formula (2):
    Figure US20030008998A1-20030109-C00012
    wherein R is an organic group; and R1 and R2 are an oxygen atom or an organic group, which is selected from the group consisting of an alkyl group, an aryl group and an aryl group.
  20. 20. The interlayer dielectric film of claim 16,
    wherein each of said plurality of second sites is polyimide, polyamide, polyimidazole, polyoxazole, polyphenylene, polyarylene, polyaryl ether, polyalkane or a fluorinated polymer of any of these polymers.
  21. 21. An interlayer dielectric film comprising a plurality of first sites of siloxane and a plurality of second sites of an organic molecule,
    wherein said plurality of second sites together form an organic polymer film, and
    said plurality of first sites are dispersed in said organic polymer film.
  22. 22. The interlayer dielectric film of claim 21,
    wherein a largest distance between said plurality of first sites is smaller than a distance between a pair of copper interconnects disposed with said organic polymer film sandwiched therebetween.
  23. 23. The interlayer dielectric film of claim 21,
    wherein pores are dispersed in said organic polymer film.
  24. 24. The interlayer dielectric film of claim 21,
    wherein each of said plurality of first sites is represented by the following general formula (1):
    Figure US20030008998A1-20030109-C00013
    wherein R1, R2 and R3 are an oxygen atom or an organic group.
  25. 25. The interlayer dielectric film of claim 21,
    wherein each of said plurality of first sites is represented by the following general formula (2):
    Figure US20030008998A1-20030109-C00014
    wherein R is an organic group; and R1 and R2 are an oxygen atom or an organic group, which is selected from the group consisting of an alkyl group, an aryl group and an aryl group.
  26. 26. The interlayer dielectric film of claim 21,
    wherein each of said plurality of second sites is polyimide, polyamide, polyimidazole, polyoxazole, polyphenylene, polyarylene, polyaryl ether, polyalkane or a fluorinated polymer of any of these polymers.
  27. 27. An interlayer dielectric film comprising a multi-layer film in which a first layer of siloxane and a second layer of an organic molecule are alternately stacked on each other.
US10128296 2001-05-11 2002-04-24 Interlayer dielectric film Abandoned US20030008998A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001141055A JP3505520B2 (en) 2001-05-11 2001-05-11 Interlayer insulating film
JP2001-141055 2005-05-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12000124 US7947375B2 (en) 2001-05-11 2007-12-10 Interlayer dielectric film

Publications (1)

Publication Number Publication Date
US20030008998A1 true true US20030008998A1 (en) 2003-01-09

Family

ID=18987561

Family Applications (2)

Application Number Title Priority Date Filing Date
US10128296 Abandoned US20030008998A1 (en) 2001-05-11 2002-04-24 Interlayer dielectric film
US12000124 Expired - Fee Related US7947375B2 (en) 2001-05-11 2007-12-10 Interlayer dielectric film

Family Applications After (1)

Application Number Title Priority Date Filing Date
US12000124 Expired - Fee Related US7947375B2 (en) 2001-05-11 2007-12-10 Interlayer dielectric film

Country Status (2)

Country Link
US (2) US20030008998A1 (en)
JP (1) JP3505520B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030194495A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric
US20030211244A1 (en) * 2002-04-11 2003-11-13 Applied Materials, Inc. Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
US20030232495A1 (en) * 2002-05-08 2003-12-18 Farhad Moghadam Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US20040101633A1 (en) * 2002-05-08 2004-05-27 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US20040152338A1 (en) * 2003-01-31 2004-08-05 Applied Materials, Inc. Method for depositing a low dielectric constant film
US20040156987A1 (en) * 2002-05-08 2004-08-12 Applied Materials, Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
US20040234688A1 (en) * 2002-04-16 2004-11-25 Vinita Singh Use of cyclic siloxanes for hardness improvement
US20050214457A1 (en) * 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
US7297376B1 (en) 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
US20100007020A1 (en) * 2008-07-11 2010-01-14 Fujitsu Microelectronics Limited Semiconductor device and method of manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4854286B2 (en) * 2005-12-06 2012-01-18 株式会社アルバック Copper wiring structure

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6171687B2 (en) *
US4183874A (en) * 1976-04-30 1980-01-15 Union Carbide Corporation Silane end-capped polyarylene shaped articles and mixed resins
US5442024A (en) * 1993-04-26 1995-08-15 Chisso Corporation Photosensitive polyimide precursor composition
US5773197A (en) * 1996-10-28 1998-06-30 International Business Machines Corporation Integrated circuit device and process for its manufacture
US5877080A (en) * 1996-02-09 1999-03-02 Matsushita Electric Industrial Co.,Ltd. Method of manufacturing semiconductor device
US5962113A (en) * 1996-10-28 1999-10-05 International Business Machines Corporation Integrated circuit device and process for its manufacture
US6171687B1 (en) * 1999-10-18 2001-01-09 Honeywell International Inc. Infiltrated nanoporous materials and methods of producing same
US6465368B2 (en) * 2000-05-16 2002-10-15 Jsr Corporation Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film
US6472082B2 (en) * 1996-10-29 2002-10-29 Nippon Zeon Co., Ltd. Modified thermoplastic norbornene polymer and process for the production thereof
US20020192980A1 (en) * 2001-06-19 2002-12-19 Hogle Richard A. Methods for forming low-k dielectric films
US20030044588A1 (en) * 2000-07-21 2003-03-06 Toppan Printing Co., Ltd. Insulating resin composition for multi-layered printed circuit wiring board, multi-layerd printed circuit wiring board using the particular resin composition, and manufacturing the same
US20040068075A1 (en) * 1999-12-23 2004-04-08 Hybrid Plastics Polyhedral oligomeric -silsesquioxanes, -silicates and -siloxanes bearing ring-strained olefinic functionalities

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0224019B2 (en) 1983-12-27 1990-05-28 Intaanashonaru Bijinesu Mashiinzu Corp
JPH05125191A (en) 1991-11-06 1993-05-21 Kanegafuchi Chem Ind Co Ltd Silicon-based hybrid material
JP2773660B2 (en) 1994-10-27 1998-07-09 日本電気株式会社 Semiconductor device
EP0849796A3 (en) 1996-12-17 1999-09-01 Texas Instruments Incorporated Improvements in or relating to integrated circuits
JP3190886B2 (en) 1998-06-17 2001-07-23 日本エー・エス・エム株式会社 Growth method of the polymer film
US6806161B2 (en) * 2000-04-28 2004-10-19 Lg Chem Investment, Ltd. Process for preparing insulating material having low dielectric constant
US7144827B2 (en) * 2002-01-17 2006-12-05 Silecs Oy Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
JP2004307692A (en) * 2003-04-09 2004-11-04 Matsushita Electric Ind Co Ltd Composition for forming porous film, method for producing porous film, porous film, interlayer dielectric film and semiconductor device

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6171687B2 (en) *
US4183874A (en) * 1976-04-30 1980-01-15 Union Carbide Corporation Silane end-capped polyarylene shaped articles and mixed resins
US5442024A (en) * 1993-04-26 1995-08-15 Chisso Corporation Photosensitive polyimide precursor composition
US5877080A (en) * 1996-02-09 1999-03-02 Matsushita Electric Industrial Co.,Ltd. Method of manufacturing semiconductor device
US5773197A (en) * 1996-10-28 1998-06-30 International Business Machines Corporation Integrated circuit device and process for its manufacture
US5962113A (en) * 1996-10-28 1999-10-05 International Business Machines Corporation Integrated circuit device and process for its manufacture
US6472082B2 (en) * 1996-10-29 2002-10-29 Nippon Zeon Co., Ltd. Modified thermoplastic norbornene polymer and process for the production thereof
US6171687B1 (en) * 1999-10-18 2001-01-09 Honeywell International Inc. Infiltrated nanoporous materials and methods of producing same
US20040068075A1 (en) * 1999-12-23 2004-04-08 Hybrid Plastics Polyhedral oligomeric -silsesquioxanes, -silicates and -siloxanes bearing ring-strained olefinic functionalities
US6465368B2 (en) * 2000-05-16 2002-10-15 Jsr Corporation Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film
US20030044588A1 (en) * 2000-07-21 2003-03-06 Toppan Printing Co., Ltd. Insulating resin composition for multi-layered printed circuit wiring board, multi-layerd printed circuit wiring board using the particular resin composition, and manufacturing the same
US20020192980A1 (en) * 2001-06-19 2002-12-19 Hogle Richard A. Methods for forming low-k dielectric films

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030211244A1 (en) * 2002-04-11 2003-11-13 Applied Materials, Inc. Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
US20030194495A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric
US20040234688A1 (en) * 2002-04-16 2004-11-25 Vinita Singh Use of cyclic siloxanes for hardness improvement
US20040101633A1 (en) * 2002-05-08 2004-05-27 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US7422774B2 (en) 2002-05-08 2008-09-09 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US20040156987A1 (en) * 2002-05-08 2004-08-12 Applied Materials, Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
US7056560B2 (en) 2002-05-08 2006-06-06 Applies Materials Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
US7060330B2 (en) 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US20030232495A1 (en) * 2002-05-08 2003-12-18 Farhad Moghadam Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US6936551B2 (en) 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US6897163B2 (en) 2003-01-31 2005-05-24 Applied Materials, Inc. Method for depositing a low dielectric constant film
US20040152338A1 (en) * 2003-01-31 2004-08-05 Applied Materials, Inc. Method for depositing a low dielectric constant film
US20050214457A1 (en) * 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
US7297376B1 (en) 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
US20100007020A1 (en) * 2008-07-11 2010-01-14 Fujitsu Microelectronics Limited Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date Type
JP3505520B2 (en) 2004-03-08 grant
JP2002334872A (en) 2002-11-22 application
US7947375B2 (en) 2011-05-24 grant
US20080090094A1 (en) 2008-04-17 application

Similar Documents

Publication Publication Date Title
US6583048B2 (en) Organosilicon precursors for interlayer dielectric films with low dielectric constants
US6653718B2 (en) Dielectric films for narrow gap-fill applications
US6399210B1 (en) Alkoxyhydridosiloxane resins
US7256127B2 (en) Air gap formation
US6214748B1 (en) Semiconductor device and method for the fabrication thereof
US7018678B2 (en) Electronic device manufacture
US20060097393A1 (en) Low dielectric constant insulating material and semiconductor device using the material
Hatton et al. Materials chemistry for low-k materials
US20060057855A1 (en) Method for making toughening agent materials
US6780498B2 (en) Silicon-based composition, low dielectric constant film, semiconductor device, and method for producing low dielectric constant film
US20050184397A1 (en) Structures and methods for intergration of ultralow-k dielectrics with improved reliability
US20040228967A1 (en) Dielectric films for narrow gap-fill applications
US20050148202A1 (en) Method for sealing porous materials during chip production and compounds therefor
US6489030B1 (en) Low dielectric constant films used as copper diffusion barrier
US6362091B1 (en) Method for making a semiconductor device having a low-k dielectric layer
US20030017635A1 (en) Low dielectric constant polyorganosilicon materials generated from polycarbosilanes
US6943121B2 (en) Selectively converted inter-layer dielectric
US20060069171A1 (en) Composition and method
US7179758B2 (en) Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
US20030089988A1 (en) Semiconductor device and method of manufacturing the same
US6809041B2 (en) Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane
US20050233583A1 (en) Method of manufacturing semiconductor device
US20020198353A1 (en) Polycarbosilane adhesion promoters for low dielectric constant polymeric materials
US20090081418A1 (en) Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures
US20040161532A1 (en) Bonding a metal component to a low-k dielectric material

Legal Events

Date Code Title Description
AS Assignment

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AOI, NOBUO;REEL/FRAME:012832/0734

Effective date: 20020419

AS Assignment

Owner name: PANASONIC CORPORATION, JAPAN

Free format text: CHANGE OF NAME;ASSIGNOR:MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;REEL/FRAME:021930/0876

Effective date: 20081001