US20020048206A1 - Method and apparatus for reducing bleed currents within a dram array having row-to-column shorts - Google Patents

Method and apparatus for reducing bleed currents within a dram array having row-to-column shorts Download PDF

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US20020048206A1
US20020048206A1 US09/944,238 US94423801A US2002048206A1 US 20020048206 A1 US20020048206 A1 US 20020048206A1 US 94423801 A US94423801 A US 94423801A US 2002048206 A1 US2002048206 A1 US 2002048206A1
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digit lines
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complementary pair
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Manny Ma
Brian Shirley
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Ma Manny Kin F.
Brian Shirley
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/025Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4094Bit-line management or control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5006Current

Abstract

A DRAM memory array is disclosed that uses a current limiting circuit employing current feedback to clamp the current flow to reduced levels than were previously possible. The current limiting circuit comprises a long length, depletion mode transistor that has its gate voltage reduced when row-to-column shorts exist to limit the bleed current. An alternative embodiment uses a P-channel FET in series with the depletion mode transistor and has its gate tied to a negative supply and passes current until both digit lines approach approximately 0.3 Volts.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application is a continuation of application Ser. No. 09/521,953, filed Mar. 9, 2000, pending, which is a continuation of application Ser. No. 09/137,779, filed Aug. 20, 1998, now U.S. Pat. No. 6,078,538, issued Jun. 20, 2000.[0001]
  • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0002]
  • This invention relates generally to integrated memory circuits and, more specifically, to techniques for limiting bleed current in row-to-column shorts within dynamic random access memory array circuitry. [0003]
  • 2. State of the Art [0004]
  • Integrated circuit technology has come a long way, from a few random transistors fabricated on a single die to extremely complex and dense microprocessing units and random access memory devices currently available. Memory circuits, such as dynamic random access memory (DRAM) arrays, have increased in complexity and density over time. With such increased density and complexity, it is very likely that one or more shorts will occur between a word line (generally referred to as a “row” within the array) and a digit line (generally referred to as a “column” within the array). [0005]
  • A row-to-column short typically is a point defect that shorts together a particular row line to a perpendicular digit line. Such a defect generally ruins the integrity of both the row and column. Spare rows and spare columns are created within the DRAM array in combination with address redirection circuitry in order to substitute functional spare rows and columns for those that are shorted—at least to the extent that shorted rows and columns do not exceed the number of spare rows and columns. Even though this on-chip redundancy allows for the repair of a DRAM integrated circuit device, it is important to note that the shorted columns and rows are not disconnected from the array circuitry. The shorted columns and rows are merely no longer addressed by the array's address decode circuitry. Disconnection of the shorted rows and columns from the array circuitry is impractical—if not impossible—with presently available technology due to the small interword line and interdigit line pitch used to fabricate DRAM arrays. Schemes for implementing row and column redundancy in DRAM arrays are well known in the art, and it is not necessary to further detail these structures at this time. [0006]
  • The repair of row to column shorts through redirected addressing does not eliminate the presence of shorts within the array, nor does it eliminate the potential for biased voltage pull down with the attendant problems of excessive standby current, read/write operations resulting in invalid data and possible damage to cell capacitors within the array. For example, one serious problem is that of an increase in the quiescent standby current because of a defect in the circuit. In standby mode, all the row lines are actively held to ground, while the digits are ideally held to an intermediate supply also known as DVC[0007] 2 (Vcc/2), in anticipation of a new access. The row-to-column short therefore acts to short DVC2 to ground, giving a much higher standby current than is otherwise necessary or desired.
  • Since such short defects cannot be eradicated entirely, large DRAM arrays have resorted to the use of “bleeder” circuits, which act to limit the amount of supply current that actively holds a digit line to DVC[0008] 2. A schematic example of a low-current bleeder device used in the prior art is depicted in drawing FIGS. 1A and 1B, where drawing FIG. 1A is the schematic electronic diagram while drawing FIG. 1B is a schematic typography of a fabricated memory array. Two, or more, NMOS transistors 10 accompany an equilibrating polysilicon gate transistor 12 to provide a bias level to VCC volts. Transistors 10 and 12 operate in conjunction with equilibration to ensure that the digit line pair remains at the prescribed voltage for sensing. Patent digit lines D and D* are a complementary pair that is at Vcc and ground equilibrate to Vcc/2 volts. The bias devices ensure that this occurs and also guarantee that the digit lines remain at Vcc/2, despite leakage paths that would otherwise discharge them. A current limiting device 14 is placed in series between the shared node 16, which is a polysilicon gate tied to VCC, and DVC2 bias voltage generator bus 18 (also known as Vcc/2). Current limiting device 14 is a long length (long L), low-current bleeder device 14 that limits the amount of supply current by actively holding the digit line to DVC2. For this example, the row line, which is held low in tRP for the time necessary to precharge the row because the row is shorted with the column, leaks some current through the transistor 12 when the equilibrate line is held high during tRP. Typically, current limiting device 14 limits the current of a row-column short to approximately 10 microamperes (μA), which is substantially under the standby current specifications.
  • As DRAM array sizes grow, however, row-to-column shorts become more prevalent. As such, there is a desire to reduce this current even further to yield dice with a substantial number of row/column shorts and to keep the quiescent standby current in a more tightly controlled range. Unfortunately, the dimensions of current limiting device [0009] 14 limit the amount of current that can be reduced and the row-to-column shorts cause current limiting device 14 to operate in a high-current mode. Accordingly, what is needed is a memory array current limiting circuit that reduces the amount of current drawn even further without necessarily having to reduce the size of the bleeder transistor.
  • SUMMARY OF THE INVENTION
  • According to the present invention, a DRAM memory array is disclosed that uses a current limiting circuit employing current feedback to clamp the current flow to levels lower than were previously possible. The current limiting circuit comprises a long length, depletion mode transistor that has its gate voltage reduced when row-to-column shorts exist to limit the bleed current. An alternative embodiment uses a P-channel FET in series with the depletion mode transistor and has its gate tied to a negative supply and passes current until both digit lines approach approximately 0.3 Volts.[0010]
  • BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING
  • FIGS. 1A and 1B are schematic diagrams of a prior art current limiting circuit used in a DRAM array; [0011]
  • FIGS. 2A and 2B are schematic diagrams of a current limiting circuit using current feedback for use in a DRAM array according to the present invention; [0012]
  • FIG. 3 depicts a schematic diagram of an alternative current limiting circuit for use in a DRAM array according to the present invention; [0013]
  • FIG. 4 is a graph diagram of the bleed current versus digit line voltage under row-to-column shorting; [0014]
  • FIG. 5 is a block diagram of an electronic system incorporating the DRAM according to the present invention; and [0015]
  • FIG. 6 is a diagram of a semiconductor wafer incorporating the DRAM of the present invention.[0016]
  • DETAILED DESCRIPTION OF THE INVENTION
  • Illustrated in drawing FIG. 2A is a schematic diagram depicting a low-current array current limiting or bleeder circuit [0017] 20 according to the present invention. Bleeder circuit 20 is intended to be used in a dynamic random access memory (DRAM) device found within a computer system. Although the present invention will be described with respect to this embodiment, which includes a DRAM device, it will be understood by those having skill in the field of this invention that the present invention includes within its scope any electronic device, including a processor device having cache memory.
  • An example of an exemplary DRAM circuit in which the present invention is incorporated is found in U.S. Pat. No. 5,552,739, entitled Integrated Circuit Power Supply Having Piece-Wise Linearity, herein incorporated by reference for all purposes, as well as in U.S. Pat. No. 5,235,550, entitled Method for Maintaining Optimum Biasing Voltage and Standby Current Levels in a DRAM Array Having Repaired Row to Column Shorts, also herein incorporated by reference for all purposes. U.S. Pat. No. 5,235,550 further depicts how a current limiting circuit may be incorporated into a memory circuit, such as a DRAM array. [0018]
  • Illustrated in drawing FIG. 2A, a plurality of digit line pairs (D[0019] 1-D1*, D2-D2*, D3-D3*, and D4-D4*) is shown with its equilibrate circuitry. Node 22 is a local node shared with all common nodes of each set of equilibrate transistors (Q1A-Q1C, Q2A-Q2C, Q3A-Q3C, and Q4A-Q4C). A current limiting device 24 is placed in series between shared node 22 and the Vcc/2, also referred to as DVC2, voltage generator bus 26. This arrangement is repeated throughout the array, so that in the event of a row-to-column short within one or more of the digit lines of a particular digit line pair, only that pair will be affected. The current limiting device 24 incorporates a long length (long l), depletion mode transistor 28 having its gate tied to the column lines (D and D*) while the drain is tied to DVC2. In this configuration, the gate voltage is reduced under row-to-column short conditions in such a manner as to limit the bleeder current IDS, or the drain-to-source current. Further, bleeder circuit 20 utilizes current feedback to limit the current flow from the row-to-column short. This arrangement also provides for a much lower IDS bleed current for a given transistor dimension. In this example, the bleeder current IDS is limited to 1 microA.
  • Illustrated in drawing FIG. 2B is a surface view of a memory array layout in a semiconductor substrate such as silicon. Bleeder circuit [0020] 20 conforms to the schematic diagram of 2A. Datalines D and D* are metal leads. A voltage generator bus 26 is an N+ semiconductor layer tied to the DVC2. Further, each transistor QN has its polysilicon gate tied to an equilibrate line. Next, the long depletion mode device 28 is formed of a polysilicon gate that is coupled using a short metal strap 29 that ties the gate to its drain.
  • Although a single current limiting device could conceivably be used for each digit line pair, this increases the cost of the die having such architecture, as the high number of current limiting devices required for such an architecture would significantly increase die size. On the other hand, all column pairs isolated from the bias voltage generator bus by a single current limiting device will be shorted to Vss if a row-to-column short exists on any of the digit lines among those column pairs. Hence, the tied column pairs must be replaced as a unit if any one or more of the digit lines among the tied column pairs is shorted to a word line. This constraint places a practical limit on the total number of digit line pairs associated with a single current limiting device. Typically, one or two column pairs will be tied to one current limiting device, although any number may be connected to a current limiting device. [0021]
  • Illustrated in drawing FIG. 3 is an alternative embodiment of a current limiting circuit according to the present invention. The redundancy shown in drawing FIGS. 2A and 2B has been eliminated merely for the sake of clarity. A low-current array bleeder circuit [0022] 30 is provided that uses a similar feedback arrangement or current limiting device 24 as that found in drawing FIGS. 2A and 2B, but further includes a second switch 32 connected to transistor 28. Switch 32 is a P-channel MOSFET having its gate tied to a negative supply voltage (Vbb). Switch 32 passes current in a row-to-column short mode until both digit and digit* lines (D, D*) approach approximately 3.0 V. At this voltage level, IDS becomes 0 A and no current flows. Illustrated in drawing FIG. 4 is a graph illustrating the effect of using bleeder circuit 20 or 30 according to the present invention. At a voltage level DV2, the voltage on D line causes the current to stop flowing. As the voltage decreases on D line, the bleeder current begins to flow until such a time as the voltage reaches approximately 0.2-0.3 V. At that time, the bleeder current ceases to flow or is now at 0.0 A.
  • Illustrated in drawing FIG. 5 is a block diagram of a computer system [0023] 50. Computer system 50 includes an input device 52, such as a keyboard, an output device 54, such as a video monitor, and a storage device 56, all coupled to a conventional processor 58. The computer system 50 further includes a memory device, such as a dynamic random access memory (DRAM) device 60, coupled to processor 58. DRAM device 60 incorporates either embodiment of memory cells shown respectively in drawing FIGS. 2A, 2B, and 3. Although DRAM is the memory of discussion, it will be appreciated by those skilled in the art that the present invention includes other memory devices such as read only memory, cache memory, and video RAM.
  • As shown in drawing FIG. 6, a DRAM device [0024] 60 that includes the DRAM portion 20 or 30 of FIG. 2 or 3, respectively, is fabricated on the surface of a semiconductor wafer 62. The wafer 62 may comprise a sliced wafer of silicon, or may comprise any one of a wide variety of substrates, including, for example, a Silicon-on-Sapphire (SOS) substrate, a Silicon-on-Insulator (SOI) substrate, or a Silicon-on-Glass (SOG) substrate.
  • While the present invention has been described in terms of certain preferred embodiments, it is not so limited, and those of ordinary skill in the art will readily recognize and appreciate that many additions, deletions and modifications to the embodiments described herein may be made without departing from the scope of the invention as hereinafter claimed. [0025]

Claims (23)

What is claimed is:
1. A semiconductor memory device comprising:
a complementary pair of digit lines;
a row line connected to said complementary pair of digit lines;
at least one memory cell connected to said complementary pair of digit lines; and
a circuit for connection to said memory cell and said complementary pair of digit lines, said circuit having a current feed back for limiting a current flow through said complementary pair of digit lines when at least one digit line of said complementary pair of digit lines is shorted.
2. The semiconductor memory device for an electronic device according to claim 1, wherein said circuit comprises a long length, depletion mode transistor having a gate thereof connected to said complementary pair of digit lines.
3. The semiconductor memory device for an electronic device according to claim 1, wherein said circuit further comprises:
a switching transistor connected to said complementary pair of digit lines, said switching transistor having a gate node connected to a negative voltage supply; and
a long length, depletion mode transistor connected to said switching transistor, said long length, depletion mode transistor having a gate node connected to said complementary pair of digit lines providing feedback controlling and limiting a bleed current when one digit line of said complementary pair of digit lines is shorted.
4. The semiconductor memory device for an electronic device according to claim 1, further comprising an equilibrate line connected to said memory cell.
5. A semiconductor memory device for an electronic device comprising:
at least one complementary pair of digit lines;
a row line connected to said at least one complementary pair of digit lines;
at least one memory cell connected to said at least one complementary pair of digit lines; and
a circuit for connection to said at least one memory cell and said at least one complementary pair of digit lines, said circuit having a current feed back for limiting a current flow through said at least one complementary pair of digit lines when at least one digit line of said at least one complementary pair of digit lines is shorted to said row line.
6. The semiconductor memory device for an electronic device according to claim 5, wherein said circuit comprises a long length, depletion mode transistor having its gate connected to said at least one complementary pair of digit lines.
7. The semiconductor memory device for an electronic device according to claim 5, wherein said circuit further comprises:
a switching transistor connected to said at least one complementary pair of digit lines, said switching transistor having a gate node connected to a negative voltage supply; and
a long length, depletion mode transistor connected to said switching transistor, said long, length, depletion mode transistor having a gate node connected to said at least one complementary pair of digit lines for providing feedback in controlling and limiting a bleed current when said at least one digit line of said at least one complementary pair of digit lines is shorted with said row line.
8. The semiconductor memory device for an electronic device according to claim 5, further comprising an equilibrate line connected to said at least one memory cell.
9. A memory array in a semiconductor memory die comprising:
a plurality of complementary pairs of digit lines;
a row line connected to said plurality of complementary pairs of digit lines;
a plurality of memory cells, at least one memory cell of said plurality of memory cells connected to at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines; and
a plurality of circuits, at least one circuit of said plurality of circuits for connection to said at least one memory cell of said plurality of memory cells and said at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines, said at least one circuit having current feedback for limiting a current flow through said plurality of complementary pairs of digit lines when said at least one complementary pair of digit lines of said complementary pairs of digit lines is shorted, each circuit of said plurality of current limiting circuits comprising a long length, depletion mode transistor having a gate thereof connected to said plurality of complementary pairs of digit lines.
10. A memory array of a semiconductor memory device comprising:
a plurality of complementary pairs of digit lines;
a row line connected to said plurality of complementary pairs of digit lines;
a plurality of memory cells, at least one of said plurality of memory cells being connected to at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines; and
a plurality of circuits, at least one of said plurality of circuits being for connection to said at least one of said plurality of memory cells and said at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines, said at least one of said plurality of circuits having current feedback to limit a current flow through said at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines when at least one digit line of said at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines is shorted, each circuit of said plurality of circuits comprising:
a switching transistor connected to said at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines, and having a gate node connected to a negative voltage supply; and
a long length, depletion mode transistor connected to said switching transistor and having a gate node connected to said at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines for providing feedback in controlling and limiting a bleed current when one digit line of said at least one complementary pair of said plurality of complementary pairs of digit lines is shorted.
11. The memory array in a semiconductor memory device according to claim 9, further comprising an equilibrate line connected to selected ones of said plurality of memory cells in a common row.
12. A memory array of a semiconductor memory device comprising:
a plurality of complementary pairs of digit lines;
a row line connected to said plurality of complementary pairs of digit lines;
a plurality of memory cells, at least one memory cell of said plurality of memory cells being connected to at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines; and
a plurality of circuits, at least one of said plurality of circuits for connecting to said at least one memory cell of said plurality of memory cells and said at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines, said at least one of said plurality of circuits having current feedback to limit a current flow through said at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines when at least one digit line of said at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines is shorted with another line, each circuit of said plurality of circuits comprising a long length, depletion mode transistor having its gate connected to said at least one complementary pair of digit lines of said plurality of complementary pairs of digit lines.
13. A memory array of a semiconductor memory device comprising:
a plurality of complementary pairs of digit lines;
a row line connected to said plurality of complementary pairs of digit lines;
a plurality of memory cells, at least one memory cell of said plurality of memory cells connected to at least one of said plurality of complementary pairs of digit lines; and
a plurality of limiting circuits, at least one limiting circuit of said plurality of limiting circuits for connection to said at least one of said plurality of memory cells and said at least one of said plurality of complementary pairs of digit lines, said at least one limiting circuit of said plurality of limiting circuits having current feedback to limit a current flow through said at least one of said plurality of complementary pairs of digit lines when at least one digit line of said at least one of said plurality of complementary pairs of digit lines is shorted with another line, each limiting circuit of said plurality of limiting circuits comprising:
a switching transistor connected to said at least one of said plurality of complementary pairs of digit lines, said switching transistor having a gate node connected to a negative voltage supply; and
a long length, depletion mode transistor connected to said switching transistor and having a gate node connected to said at least one of said plurality of complementary pairs of digit lines providing feedback controlling and limiting a bleed current when one digit line of said at least one of said plurality of complementary pairs of digit lines is shorted with said row line.
14. The memory array of a semiconductor memory device according to claim 12, further comprising an equilibrate line connected to selected ones of said plurality of memory cells in a common row.
15. A semiconductor wafer having at least one semiconductor memory device thereon, said at least one semiconductor memory device comprising:
a complementary pair of digit lines;
a row line connected to said complementary pair of digit lines;
a memory cell connected to said complementary pair of digit lines; and
a circuit for connection to said memory cell and said complementary pair of digit lines, said circuit having current feedback to limit a current flow through said complementary pair of digit lines when said complementary pair of digit lines is shorted, said circuit comprising a long length, depletion mode transistor having its gate connected to said complementary pair of digit lines.
16. A semiconductor wafer having at least one semiconductor memory device thereon, said at least one memory device comprising:
a complementary pair of digit lines;
a row line connected to said complementary pair of digit lines;
a memory cell connected to said complementary pair of digit lines; and
a limiting circuit for connection to said memory cell and said complementary pair of digit lines, said limiting circuit having current feedback to limit a current flow through said complementary pair of digit lines when said complementary pair of digit lines is shorted, said limiting circuit comprising:
a switching transistor connected to said complementary pair of digit lines, said switching transistor having a gate node connected to a negative voltage supply; and
a long length, depletion mode transistor connected to said switching transistor, said long length, depletion mode transistor having a gate node connected to said complementary pair of digit lines providing feedback controlling and limiting a bleed current when one digit line of said complementary pair of digit lines is shorted.
17. The semiconductor wafer according to claim 15, further comprising an equilibrate line connected to said memory cell.
18. A semiconductor wafer having at least one semiconductor memory device thereon, said at least one semiconductor memory device comprising:
a complementary pair of digit lines;
a row line connected to said complementary pair of digit lines;
a memory cell connected to said complementary pair of digit lines; and
a limiting circuit connected to said memory cell and said complementary pair of digit lines, said limiting circuit having current feedback to limit a current flow through said complementary pair of digit lines when said complementary pair of digit lines is shorted with another line, said limiting circuit comprising a long length, depletion mode transistor having its gate connected to said complementary pair of digit lines.
19. A semiconductor wafer having at least one semiconductor memory device thereon, said at least one memory device comprising:
a complementary pair of digit lines;
a row line connected to said complementary pair of digit lines;
a memory cell connected to said complementary pair of digit lines; and
a circuit for connection to said memory cell and said complementary pair of digit lines, said circuit having current feedback to limit a current flow through said complementary pair of digit lines when said complementary pair of digit lines is shorted with another line, said circuit comprising:
a switching transistor, connected to said complementary pair of digit lines, and having a gate node connected to a negative voltage supply; and
a long length, depletion mode transistor connected to said switching transistor, said long length, depletion mode transistor having a gate node connected to said complementary pair of digit lines providing feedback controlling and limiting a bleed current when one digit line of said complementary pair of digit lines is shorted with another line.
20. The semiconductor wafer according to claim 19, wherein said another line includes a row line.
21. The semiconductor wafer according to claim 18, further comprising an equilibrate line connected to said memory cell.
22. An method for isolating a complementary pair of data lines having a row-to-column short within a memory device, the method comprising:
determining a voltage feedback of a gate transistor connected to said complementary pair of data lines having a row-to-column short within a memory device; and
reducing a current flow at said row-to-column short when said voltage feedback exceeds a threshold level.
23. The method according to claim 22, wherein said current flow is reduced to substantially zero amperes.
US09/944,238 1998-08-20 2001-08-30 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts Expired - Lifetime US6434059B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US09/137,779 US6078538A (en) 1998-08-20 1998-08-20 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts
US09/521,933 US6310802B1 (en) 1998-08-20 2000-03-09 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts
US09/944,238 US6434059B1 (en) 1998-08-20 2001-08-30 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts

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US09/521,756 Expired - Lifetime US6226221B1 (en) 1998-08-20 2000-03-09 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts
US09/521,933 Expired - Lifetime US6310802B1 (en) 1998-08-20 2000-03-09 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts
US09/834,298 Expired - Lifetime US6442101B2 (en) 1998-08-20 2001-04-12 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts
US09/944,238 Expired - Lifetime US6434059B1 (en) 1998-08-20 2001-08-30 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts
US10/200,869 Expired - Lifetime US6631091B2 (en) 1998-08-20 2002-07-22 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts
US10/206,174 Expired - Lifetime US6625068B1 (en) 1998-08-20 2002-07-25 Apparatus for reducing bleed currents within a DRAM array having row-to-column shorts
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US09/521,933 Expired - Lifetime US6310802B1 (en) 1998-08-20 2000-03-09 Method and apparatus for reducing bleed currents within a DRAM array having row-to-column shorts
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US20040032784A1 (en) 2004-02-19
US6888762B2 (en) 2005-05-03
US6625068B1 (en) 2003-09-23
US20020181300A1 (en) 2002-12-05
US6226221B1 (en) 2001-05-01
US6631091B2 (en) 2003-10-07
US20010046174A1 (en) 2001-11-29
US6078538A (en) 2000-06-20
US6442101B2 (en) 2002-08-27
US6310802B1 (en) 2001-10-30

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