US20020012609A1 - Solder composition for high temperature semiconductor device - Google Patents

Solder composition for high temperature semiconductor device Download PDF

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Publication number
US20020012609A1
US20020012609A1 US09/791,674 US79167401A US2002012609A1 US 20020012609 A1 US20020012609 A1 US 20020012609A1 US 79167401 A US79167401 A US 79167401A US 2002012609 A1 US2002012609 A1 US 2002012609A1
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United States
Prior art keywords
solder composition
semiconductor device
thermal expansion
ceramic
coefficient
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Abandoned
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US09/791,674
Inventor
Peter Ewer
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Infineon Technologies Americas Corp
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International Rectifier Corp USA
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Priority to US09/791,674 priority Critical patent/US20020012609A1/en
Assigned to INTERNATIONAL RECTIFIER CORPORATION reassignment INTERNATIONAL RECTIFIER CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: EWER, PETER
Publication of US20020012609A1 publication Critical patent/US20020012609A1/en
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C11/00—Alloys based on lead
    • C22C11/06—Alloys based on lead with tin as the next major constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Definitions

  • This invention relates to solder materials and, more specifically, relates to a solder for semiconductor devices with a temperature expansion matched to the temperature expansion of the parts being soldered.
  • solders are commonly used to solder a silicon semiconductor die or chip to a conductive support, such as a copper heat sink.
  • a conductive support such as a copper heat sink.
  • the thermal expansion of the die, the solder and the heat sink are diverse. After temperature cycling, the soldered connection may fail.
  • silicon has a thermal expansion, in parts per million, of 4.5 ⁇ 10 ⁇ 6 /° C.
  • copper has a thermal expansion of 17 ⁇ 10 ⁇ 6 /° C.
  • a soldered device is temperature cycled between about ⁇ 55° C. and +150° C., considerable stress is developed, resulting in failure of the soldered joint. This problem is even further aggravated in higher temperature systems, such as those which operate at up to 200° C.
  • solder which has a temperature coefficient which better approximates that of the parts to be joined.
  • a solder containing small ceramic beads has been used to adjust the overall solder temperature coefficient to one which is between that of silicon and copper.
  • the present invention is a non-ceramic solder composition for connecting a semiconductor device to a conductive support.
  • the solder composition is composed of a solder component and a filler component which are proportioned so that the solder composition has an overall coefficient of thermal expansion that is intermediate of the coefficients of thermal expansion of the semiconductor device and the conductive support.
  • Heat sink 11 may be a portion of a conventional lead frame which is to receive die 10 , or can be any other kind of conductive support. While the support is shown as copper, other metals may be used.
  • a novel solder layer 14 which has a coefficient of thermal expansion intermediate to the coefficient of expansion of die 10 and heat sink 11 .
  • a solder is formulated in which a lead-tin alloy solder 20 is filled with tungsten particles 21 of varying size and filling the lead-tin matrix with about 80% by weight.
  • Tungsten is a preferred material since it has an extremely low temperature expansion coefficient of 4.5 ⁇ 10 ⁇ 6 /° C.
  • the filler percentage can vary from about 10% to about 90%, depending on the desired temperature coefficient of expansion.
  • the tungsten particles have a diameter, or a maximum dimension in any direction, of 0.001 to 0.003 inch, and thus can be readily mixed into a conventional lead-tin alloy solder and comprise up to about 80% by weight of the total solder.
  • the solder layer is suitably fabricated and then cut into small wafers, which can be used with a conventional pick-and-place apparatus during the assembly of die 10 and heat sink 11 .
  • the expansion of the lead-tin component is about 25 ⁇ 10 ⁇ 6 /° C. while the temperature coefficient of the tungsten is about 4.5 ⁇ 10 ⁇ 6 /° C.
  • An appropriate combination of the lead-tin component and the tungsten component produces an estimated overall temperature coefficient of 10 ⁇ 10 ⁇ 6 /° C., which is approximately intermediate of the temperature coefficient of silicon die 10 (4.5 ⁇ 10 ⁇ 6 /° C.) and copper heat sink 11 (17 ⁇ 10 ⁇ 6 /° C.).
  • the solder will better resist failure during temperature cycling, warpage up to 200° C.
  • tungsten particles have been described as the solder filler, molybdenum particles and carbon fiber particles also can be used.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
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Abstract

A non-ceramic solder composition for coupling a semiconductor device to a conductive support, composed of a first amount of a solder component and a second amount of a filler component. The first and second amounts of the respective components are proportioned so that the solder composition has an overall coefficient of thermal expansion that is intermediate of the coefficients of thermal expansion of the semiconductor device and the conductive support.

Description

  • This application claims the benefit of U.S. Provisional Application Ser. No. 60/184,516, filed Feb. 24, 2000.[0001]
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0002]
  • This invention relates to solder materials and, more specifically, relates to a solder for semiconductor devices with a temperature expansion matched to the temperature expansion of the parts being soldered. [0003]
  • 2. Discussion of the Related Art [0004]
  • Solders are commonly used to solder a silicon semiconductor die or chip to a conductive support, such as a copper heat sink. When such die is operated at high temperatures, for example, as high as 200° C., the thermal expansion of the die, the solder and the heat sink are diverse. After temperature cycling, the soldered connection may fail. For example, silicon has a thermal expansion, in parts per million, of 4.5×10[0005] −6/° C., and copper has a thermal expansion of 17×10−6/° C. When a soldered device is temperature cycled between about −55° C. and +150° C., considerable stress is developed, resulting in failure of the soldered joint. This problem is even further aggravated in higher temperature systems, such as those which operate at up to 200° C.
  • Attempts have been made to avoid this problem by using a solder which has a temperature coefficient which better approximates that of the parts to be joined. For example, a solder containing small ceramic beads has been used to adjust the overall solder temperature coefficient to one which is between that of silicon and copper. These ceramic-containing solders have not worked satisfactorily and have a reduced thermal conductivity. [0006]
    • SUMMARY OF THE INVENTION
  • The present invention is a non-ceramic solder composition for connecting a semiconductor device to a conductive support. The solder composition is composed of a solder component and a filler component which are proportioned so that the solder composition has an overall coefficient of thermal expansion that is intermediate of the coefficients of thermal expansion of the semiconductor device and the conductive support.[0007]
    • BRIEF DESCRIPTION OF THE DRAWING
  • The sole drawing is an exploded, schematic, cross-sectional view of a silicon die, solder layer and copper heat sink in which the solder is compounded in accordance with the invention.[0008]
    • DETAILED DESCRIPTION OF PREFERRED EMBODIMENT
  • The drawing shows a portion of a [0009] semiconductor silicon die 10 which is to be soldered to a copper heat sink support 11. Die 10 may be any semiconductor device such as a diode, MOSFET, IGBT or the like and will have suitable PN junctions (not shown) for that purpose, and will have a bottom solderable coating 12. Coating 12 may be formed of multiple layers, the outermost of which is preferably silver. Other metals can be used.
  • Heat sink [0010] 11 may be a portion of a conventional lead frame which is to receive die 10, or can be any other kind of conductive support. While the support is shown as copper, other metals may be used.
  • In accordance with the invention, a novel solder layer [0011] 14 is provided which has a coefficient of thermal expansion intermediate to the coefficient of expansion of die 10 and heat sink 11. Thus, a solder is formulated in which a lead-tin alloy solder 20 is filled with tungsten particles 21 of varying size and filling the lead-tin matrix with about 80% by weight. Tungsten is a preferred material since it has an extremely low temperature expansion coefficient of 4.5×10−6/° C. The filler percentage can vary from about 10% to about 90%, depending on the desired temperature coefficient of expansion.
  • For a solder layer [0012] 14 having a thickness of about 0.004 inches, the tungsten particles have a diameter, or a maximum dimension in any direction, of 0.001 to 0.003 inch, and thus can be readily mixed into a conventional lead-tin alloy solder and comprise up to about 80% by weight of the total solder. The solder layer is suitably fabricated and then cut into small wafers, which can be used with a conventional pick-and-place apparatus during the assembly of die 10 and heat sink 11.
  • In a preferred embodiment of solder layer [0013] 14, the expansion of the lead-tin component is about 25×10−6/° C. while the temperature coefficient of the tungsten is about 4.5×10−6/° C. An appropriate combination of the lead-tin component and the tungsten component produces an estimated overall temperature coefficient of 10×10−6/° C., which is approximately intermediate of the temperature coefficient of silicon die 10 (4.5×10−6/° C.) and copper heat sink 11 (17×10−6/° C.). Thus, the solder will better resist failure during temperature cycling, warpage up to 200° C.
  • While tungsten particles have been described as the solder filler, molybdenum particles and carbon fiber particles also can be used. [0014]
  • Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention be limited not by the specific disclosure herein, but only by the appended claims. [0015]

Claims (12)

What is claimed is:
1. A non-ceramic solder composition for coupling a semiconductor device to a conductive support, comprising:
a first amount of a solder component having a thermal expansion coefficient; and
a second amount of a filler component having a thermal expansion coefficient;
wherein the first amount and the second amount are proportioned so that said solder composition has an overall coefficient of thermal expansion intermediate of the coefficient of thermal expansion of the semiconductor device and the coefficient of thermal expansion of the conductive support.
2. The non-ceramic solder composition of claim 1, wherein the solder component is a lead-tin alloy.
3. The non-ceramic solder composition of claim 1, wherein the filler component is tungsten, molybdenum, carbon fiber particles or combinations thereof.
4. The non-ceramic solder composition of claim 1, wherein the filler component has a maximum particle size which is less than 0.004 inches.
5. The non-ceramic solder composition of claim 1, wherein the filler component ranges from 10% to 90% by weight of said solder composition.
6. The non-ceramic solder composition of claim 1, wherein the filler component is 80% by weight of said solder composition.
7. The non-ceramic solder composition of claim 1, wherein the conductive support is constructed from copper, lead or combinations thereof.
8. The non-ceramic solder composition of claim 1, wherein the overall coefficient of thermal expansion ranges from 4.5×10−6/° C. to 17×10−6/° C.
9. The non-ceramic solder composition of claim 1, wherein the overall coefficient of thermal expansion is 10×10−6/° C.
10. The non-ceramic solder composition of claim 1, wherein the semiconductor device is a diode or an IGBT.
11. The non-ceramic solder composition of claim 1, wherein the semiconductor device is a diode or a MOSFET.
12. The non-ceramic solder composition of claim 1, wherein the semiconductor device is a diode or an IGBT.
US09/791,674 2000-02-24 2001-02-26 Solder composition for high temperature semiconductor device Abandoned US20020012609A1 (en)

Priority Applications (1)

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US09/791,674 US20020012609A1 (en) 2000-02-24 2001-02-26 Solder composition for high temperature semiconductor device

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060043579A1 (en) * 2004-08-31 2006-03-02 Jun He Transistor performance enhancement using engineered strains
US20150028441A1 (en) * 2013-07-25 2015-01-29 Siemens Aktiengesellschaft Semiconductor element with solder resist layer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060043579A1 (en) * 2004-08-31 2006-03-02 Jun He Transistor performance enhancement using engineered strains
US7679145B2 (en) * 2004-08-31 2010-03-16 Intel Corporation Transistor performance enhancement using engineered strains
US20150028441A1 (en) * 2013-07-25 2015-01-29 Siemens Aktiengesellschaft Semiconductor element with solder resist layer
CN104347749A (en) * 2013-07-25 2015-02-11 西门子公司 Semiconductor element with solder resist layer

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