US20020003428A1 - Method and apparatus for collecting light from an array of light emitting devices - Google Patents
Method and apparatus for collecting light from an array of light emitting devices Download PDFInfo
- Publication number
- US20020003428A1 US20020003428A1 US09/168,035 US16803598A US2002003428A1 US 20020003428 A1 US20020003428 A1 US 20020003428A1 US 16803598 A US16803598 A US 16803598A US 2002003428 A1 US2002003428 A1 US 2002003428A1
- Authority
- US
- United States
- Prior art keywords
- light
- light emitting
- emitting devices
- group
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0407—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings
- G01J1/0422—Optical elements not provided otherwise, e.g. manifolds, windows, holograms, gratings using light concentrators, collectors or condensers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J2001/4247—Photometry, e.g. photographic exposure meter using electric radiation detectors for testing lamps or other light sources
Definitions
- the present invention relates to testing of semiconductor light emitting devices, more particularly, the invention relates to a method and apparatus for collecting light from a linear array of edge emitting semiconductor laser or LED devices.
- Semiconductor light emitting devices e.g., edge emitting laser diodes or light emitting diodes (LED), are well known in the art. Such devices are manufactured on wafers which, after initial manufacture and processing (e.g. thinning down and trimming), are separated into a predetermined number (e.g., three) of smaller units, generally referred to as wafer sections. These sections are typically further trimmed in one dimension, generally referred to as length, to a predetermined size.
- Semiconductor laser or LED bars are produced from a semiconductor wafer section by a scribing and cleaving procedure, wherein predefined shapes of bars are delineated by scribing lines and the bars are separated by cleaving along the scribing lines. Accurate cleaving along the scribed lines is possible because of the brittle nature of the sections.
- a typical semiconductor LED or laser bar includes a p-contact surface, generally referred to as the top surface, and an n-contact surface, generally referred to as the back surface.
- the p-contacts and n-contacts are produced by a fabrication sequence including a metallization process in which the surfaces of a semiconductor wafer are selectively coated with a metallic layer.
- Individual semiconductor laser or LED devices on the bars may be activated by applying an electric current across the n-contacts and p-contacts, respectively, of the devices.
- the bars are typically supported by a flexible, adhesive, holding surface. After processing, the bars may be removed from the holding surface for testing or the devices may be tested while the bars are attached to the holding surface.
- Testing of edge emitting semiconductor lasers or LEDs involves measurement of the light intensity emitted by the laser or LED devices at a predefined wavelength spectrum, while applying a predetermined current using electrical probes, namely, a p-contact probe and an n-contact probe.
- electrical probes namely, a p-contact probe and an n-contact probe.
- the light emitted by the devices must be collected at a precise, reproducible manner, e.g., at a predefined distance or angle, and delivered to a light detector using appropriate optics.
- a plurality of laser or LED devices are included in each semiconductor bar. To test individual laser or LED devices along the bar, the light detector and associated optics, as well as the p-side electrical probe, must be separately aligned for each device being tested.
- the p-contact alignment procedure requires complex and tedious positioning equipment and/or software to ensure consistency in collecting and detecting the light emitted by the laser or LED devices.
- the n-contact does not require realignment for each device being tested because the semiconductor bar includes a common n-contact for all the laser or LED devices thereon.
- the present inventors have developed a method and apparatus for testing light emission from a series of edge emitting semiconductor laser diodes or LEDs, using a light collection arrangement and a p-contact electrical probe, without requiring movement and/or realignment of the laser or LED bar, the light collection arrangement or the contact electrical probe.
- the light emitted by individual laser or LED devices along a laser or LED bar is collected sequentially by a fixed funnel-shaped light guide (hereinafter referred to as: “light funnel”) which directs the light emitted by the individual laser or LED devices to a light detector.
- a series of laser or LED bars which may be mounted on a holding substrate, may be sequentially brought to a predefined position aligned with the light funnel.
- a selectively activated electrical probe arrangement including a plurality of individually addressable p-contact probes, is brought into contact with the laser or LED bar, such that each p-contact probe is in contact with a respective p-contact.
- a switching device may be used to selectively apply biasing voltage to the to the individual laser or LED devices along the bar, via the respective p-contact probes, and the light emitted by each individual laser or LED device is collected by the fixed light funnel.
- An embodiment of the present invention thus provides apparatus for sequentially testing the light emitted by a group of semiconductor light emitting devices, each device having a p-contact, arranged to emit light over a testing area.
- the apparatus includes a light detector and a light funnel which has a collection end, constructed to capture light over substantially the entire testing area, and a detection end. The detection collects light emitted by any of the light emitting devices and the detection end directs the collected light to the light detector.
- the apparatus further includes an electrical probe arrangement including a plurality of p-contact probes which are selectively connectable with the p-contacts of respective light emitting devices in the group of light emitting devices.
- the apparatus may further include a support device for securely positioning the group of semiconductor light emitting devices aligned with the collection end of the light funnel. Additionally, the apparatus may include a switching device for selectively supplying a predetermined electrical current, via the p-contact probes, to the p-contacts of selected ones of the light emitting devices.
- the present invention also provided a method for sequentially testing the light emitted by a group of semiconductor light emitting devices, each light emitting device having a p-contact, arranged to emit light over a testing area.
- the method includes placing an electrical probe arrangement including a plurality of p-contact probes in contact with the p-contacts of respective light emitting devices in the group of light emitting devices, selectively activating selected ones of the light emitting devices in the group of light emitting devices to emit light over the testing area, guiding the light emitted by the selectively activated light emitting devices via a light funnel which captures light substantially over the entire testing area, and detecting the light guided by the light funnel.
- the light emitting devices are selectively activated by selectively supplying an electrical current to the p-contacts of the selected light emitting devices via their respective p-contact probes.
- the group of semiconductor light emitting devices are preferably securely positioned at a fixed position with respect to the collection end of the light funnel.
- FIG. 1 is a schematic front view of a semiconductor laser or LED testing apparatus in accordance with an embodiment of the present invention, shown in preparation for testing in accordance with the present invention;
- FIG. 2 is a schematic front view of the semiconductor laser or LED testing apparatus of FIG. 1, during testing of semiconductor laser or LED devices in accordance with an embodiment of the present invention
- FIG. 3 is a schematic side view of part of the semiconductor laser or LED testing apparatus of FIG. 1, during testing of semiconductor laser or LED devices in accordance with an embodiment of the present invention.
- FIG. 4 is a schematic, cross-sectional, front view of part of the testing apparatus of FIG. 1, showing a light funnel aligned with a selectively activated edge emitting laser or LED bar, in accordance with an embodiment of the present invention.
- FIG. 5 is a schematic top view of part of the testing apparatus of FIG. 1, showing two light funnels aligned with respective edges of a selectively activated edge emitting laser bar, in accordance with an embodiment of the present invention.
- the present invention will be hereinafter described in the context of testing the light output of edge emitting semiconductor laser devices. It should be understood however, that the invention is also suitable for testing the light output of other light emitting devices, for example, light emitting diode (LED) devices.
- LED light emitting diode
- FIG. 1 schematically illustrates a front view of a testing apparatus in accordance with an embodiment of the present invention
- FIGS. 2 and 3 schematically illustrate a front view and a side view respectively, of the testing apparatus of FIG. 1 during testing in accordance with an embodiment of the present invention.
- the testing apparatus includes a testing assembly 10 having a head portion 12 , a head support structure 14 and two light funnels 18 , each having a light collection end 42 and a detection end 44 .
- head assembly 10 also includes an electrical probe arrangement 16 including a plurality of separately addressable p-contact electrical probes 48 , as described in detail below.
- the testing apparatus further includes a test sample support device 24 having a surface 25 for supporting a holding substrate 22 , e.g., an adhesive film.
- a plurality of semiconductor laser bars 20 are mounted on substrate 22 such that top surface 54 faces testing assembly 10 .
- each semiconductor bar 20 includes a series of semiconductor laser devices 45 having p-contacts 46 on top surface 54 .
- Each laser device 45 when activated, emits light through edges 50 and 52 of bar 20 .
- Support device 24 may include a plurality of vacuum suction channels 26 which extend through the support device and have suction apertures 27 at surface 25 .
- surface 25 may include a generally level region 36 directly underneath probe arrangement 16 .
- Region 36 is adapted for placing one of laser bars 20 at a desired position relative to probe arrangement 16 and light funnels 18 , for testing as described below.
- Surface 25 is slanted downwardly and outwardly on either side of region 36 , such that the laser bars 20 not being tested will not block or reflect the light emitted by the laser devices 45 on the laser bar 20 being tested.
- Testing assembly 10 further includes a switching device 40 which is electrically connected, via conductors 38 , to p-contact probes 48 in probe arrangement 16 .
- Testing assembly 10 further includes two light detectors 32 which are optically coupled to detection ends 44 of respective light funnels 18 , via optical guides 34 which may include optical fibers and/or lenses as are known in the art.
- a vacuum is produced in channels 26 , e.g., by a vacuum suction pump (not shown in the drawings), in the direction indicated by arrows 28 .
- the vacuum suction produced at apertures 27 pulls substrate 22 towards surface 25 , conforming the shape of flexible substrate 22 to the shape of surface 25 .
- the vacuum at apertures 27 also ensures that substrate 22 is securely mounted on surface 25 .
- substrate 22 is positioned on surface 25 , using suitable alignment means, for example, precision X-Y-Z Axis servo stages, as is known in the art, such that the laser bar 20 to be tested is correctly positioned on region 36 underneath testing assembly 10 .
- testing assembly 10 may be lowered, using any suitable mechanical means known in the art, until probe arrangement 16 is brought into contact with the bar 20 being tested, as shown particularly in FIG. 3. At this point, contact is made between the plurality of electrical probes 48 of arrangement 16 and respective p-contacts 46 of laser devices 45 on surface 54 of bar 20 .
- probe arrangement 16 may be brought into contact with the bar 20 being tested by raising support device 24 .
- switching device 40 which may be controlled by suitable hardware or software known in the art, a predetermined bias current is selectively applied to p-contacts 46 of selected ones of laser devices 45 .
- Switching device 40 preferably supplies a bias current in a predetermined bandwidth suitable for activating the laser devices, as is known in the art, and includes an electrostatic discharge (ESD) protection circuit for protecting the laser devices from potentially damaging ESD.
- ESD electrostatic discharge
- the n-contacts to laser devices 45 are provided via a common n-contact on the bottom surface of bar 20 , as is known in the art, which may be continuously connected to a predetermined electric potential. In this manner, laser devices 45 may be sequentially activated to emit light via edges 50 and 52 of bar 20 over testing areas 62 and 64 , respectively, alongside collection ends 42 of light funnels 18 .
- light 30 emitted from edges 50 and 52 , over testing areas 62 and 64 is collected by collecting ends 42 of respective light funnels 18 which carry the light, via respective detection ends 44 and optical guides 34 , to light detectors 32 .
- Light detectors 32 monitor the intensity of light emitted from edges 50 and 52 , respectively, of each of sequentially tested laser devices 45 .
- the present invention enables reliable comparative testing of different laser devices 45 as well as comparative testing between the emissions from edges 50 and 52 for each tested laser device 45 .
- Any suitable method and apparatus may be used to analyze the laser or LED emissions of edges 50 and 52 , as detected by light detectors 32 , for example, the method and apparatus described in U.S. Pat. No. 4,795,976 to Pawlik, the disclosure of which is incorporated herein by reference.
- FIG. 4 schematically illustrates a cross-sectional front view of one of light funnels 18 juxtaposed edge 52 of one of laser bars 20 , during activation of one of laser devices 45 by switching apparatus 40 to emit light over testing area 64 .
- FIG. 5 schematically illustrates a top view of light funnels 18 aligned with respective edges 50 and 52 of bar 20 , during activation of one of laser devices 45 .
- the light 30 emitted via edge 52 over testing area 64 is received via a front surface 60 of collection end 42 and is carried by multiple reflection off inner surfaces 56 of light funnel 18 to detection end 44 .
- the geometry of light funnel 18 may be designed such that the beam of light 30 exiting detection end 44 will be a generally parallel light beam.
- the beam of light 30 exiting detection end 44 enters optical guide 34 , via an input surface 58 , and is carried by the optical guide to light detector 32 , as described above.
- front surface 60 of funnel 18 and input surface 58 of optical guide 58 are slightly angled to prevent direct reflection of light 30 off inner surfaces 56 of light funnel 18 and to ensure that a maximum, consistent, portion of light 30 will reach detector 32 .
- Light funnel 18 can be made of any suitable light guiding material, such as glass or optical fiber, which may be shaped, using shaping methods for optical fibers known in the art, to have the funnel shape shown in FIG. 4.
- light funnel 18 may include a hollow tube having polished surfaces 56 , or a tube filled with a highly light-transmissive fluid having a predetermined index of refraction. It should be appreciated that the specific geometry of light funnel 18 may depend on the materials composition of the funnel as well as the geometry of other parts of the testing apparatus.
- surfaces 56 of light funnel 18 are preferably polished and coated with a highly reflective coating, for example, a gold or “pure white” coating.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Abstract
Description
- The present invention relates to testing of semiconductor light emitting devices, more particularly, the invention relates to a method and apparatus for collecting light from a linear array of edge emitting semiconductor laser or LED devices.
- Semiconductor light emitting devices, e.g., edge emitting laser diodes or light emitting diodes (LED), are well known in the art. Such devices are manufactured on wafers which, after initial manufacture and processing (e.g. thinning down and trimming), are separated into a predetermined number (e.g., three) of smaller units, generally referred to as wafer sections. These sections are typically further trimmed in one dimension, generally referred to as length, to a predetermined size. Semiconductor laser or LED bars are produced from a semiconductor wafer section by a scribing and cleaving procedure, wherein predefined shapes of bars are delineated by scribing lines and the bars are separated by cleaving along the scribing lines. Accurate cleaving along the scribed lines is possible because of the brittle nature of the sections.
- A typical semiconductor LED or laser bar includes a p-contact surface, generally referred to as the top surface, and an n-contact surface, generally referred to as the back surface. The p-contacts and n-contacts are produced by a fabrication sequence including a metallization process in which the surfaces of a semiconductor wafer are selectively coated with a metallic layer. Individual semiconductor laser or LED devices on the bars may be activated by applying an electric current across the n-contacts and p-contacts, respectively, of the devices. During processing, the bars are typically supported by a flexible, adhesive, holding surface. After processing, the bars may be removed from the holding surface for testing or the devices may be tested while the bars are attached to the holding surface.
- Testing of edge emitting semiconductor lasers or LEDs involves measurement of the light intensity emitted by the laser or LED devices at a predefined wavelength spectrum, while applying a predetermined current using electrical probes, namely, a p-contact probe and an n-contact probe. To ensure accurate comparative testing of the laser or LED devices, the light emitted by the devices must be collected at a precise, reproducible manner, e.g., at a predefined distance or angle, and delivered to a light detector using appropriate optics. Typically, a plurality of laser or LED devices are included in each semiconductor bar. To test individual laser or LED devices along the bar, the light detector and associated optics, as well as the p-side electrical probe, must be separately aligned for each device being tested. For reliable comparative testing of the laser or LED devices, the p-contact alignment procedure requires complex and tedious positioning equipment and/or software to ensure consistency in collecting and detecting the light emitted by the laser or LED devices. The n-contact does not require realignment for each device being tested because the semiconductor bar includes a common n-contact for all the laser or LED devices thereon.
- The present inventors have developed a method and apparatus for testing light emission from a series of edge emitting semiconductor laser diodes or LEDs, using a light collection arrangement and a p-contact electrical probe, without requiring movement and/or realignment of the laser or LED bar, the light collection arrangement or the contact electrical probe.
- In accordance with the present invention, the light emitted by individual laser or LED devices along a laser or LED bar is collected sequentially by a fixed funnel-shaped light guide (hereinafter referred to as: “light funnel”) which directs the light emitted by the individual laser or LED devices to a light detector. In accordance with an aspect of the present invention, a series of laser or LED bars, which may be mounted on a holding substrate, may be sequentially brought to a predefined position aligned with the light funnel. A selectively activated electrical probe arrangement, including a plurality of individually addressable p-contact probes, is brought into contact with the laser or LED bar, such that each p-contact probe is in contact with a respective p-contact. A switching device may be used to selectively apply biasing voltage to the to the individual laser or LED devices along the bar, via the respective p-contact probes, and the light emitted by each individual laser or LED device is collected by the fixed light funnel. Thus, once the laser or LED bar is appropriately positioned with respect to the light funnel, and the p-contact probe arrangement is brought into contact with the respective p-contacts of the bar, the relative physical positions of the bar, the light funnel and the p-contact probe arrangement remain fixed during testing of all the laser or LED devices on the bar.
- An embodiment of the present invention thus provides apparatus for sequentially testing the light emitted by a group of semiconductor light emitting devices, each device having a p-contact, arranged to emit light over a testing area. The apparatus includes a light detector and a light funnel which has a collection end, constructed to capture light over substantially the entire testing area, and a detection end. The detection collects light emitted by any of the light emitting devices and the detection end directs the collected light to the light detector. The apparatus further includes an electrical probe arrangement including a plurality of p-contact probes which are selectively connectable with the p-contacts of respective light emitting devices in the group of light emitting devices. The apparatus may further include a support device for securely positioning the group of semiconductor light emitting devices aligned with the collection end of the light funnel. Additionally, the apparatus may include a switching device for selectively supplying a predetermined electrical current, via the p-contact probes, to the p-contacts of selected ones of the light emitting devices.
- The present invention also provided a method for sequentially testing the light emitted by a group of semiconductor light emitting devices, each light emitting device having a p-contact, arranged to emit light over a testing area. The method includes placing an electrical probe arrangement including a plurality of p-contact probes in contact with the p-contacts of respective light emitting devices in the group of light emitting devices, selectively activating selected ones of the light emitting devices in the group of light emitting devices to emit light over the testing area, guiding the light emitted by the selectively activated light emitting devices via a light funnel which captures light substantially over the entire testing area, and detecting the light guided by the light funnel. In an embodiment of the present invention, the light emitting devices are selectively activated by selectively supplying an electrical current to the p-contacts of the selected light emitting devices via their respective p-contact probes. The group of semiconductor light emitting devices are preferably securely positioned at a fixed position with respect to the collection end of the light funnel.
- The present invention will be understood and appreciated more fully from the following detailed description of an embodiment of the invention, taken in conjunction with the accompanying drawings in which:
- FIG. 1 is a schematic front view of a semiconductor laser or LED testing apparatus in accordance with an embodiment of the present invention, shown in preparation for testing in accordance with the present invention;
- FIG. 2 is a schematic front view of the semiconductor laser or LED testing apparatus of FIG. 1, during testing of semiconductor laser or LED devices in accordance with an embodiment of the present invention;
- FIG. 3 is a schematic side view of part of the semiconductor laser or LED testing apparatus of FIG. 1, during testing of semiconductor laser or LED devices in accordance with an embodiment of the present invention; and
- FIG. 4 is a schematic, cross-sectional, front view of part of the testing apparatus of FIG. 1, showing a light funnel aligned with a selectively activated edge emitting laser or LED bar, in accordance with an embodiment of the present invention; and
- FIG. 5 is a schematic top view of part of the testing apparatus of FIG. 1, showing two light funnels aligned with respective edges of a selectively activated edge emitting laser bar, in accordance with an embodiment of the present invention.
- The present invention will be hereinafter described in the context of testing the light output of edge emitting semiconductor laser devices. It should be understood however, that the invention is also suitable for testing the light output of other light emitting devices, for example, light emitting diode (LED) devices.
- Reference is made to FIG. 1 which schematically illustrates a front view of a testing apparatus in accordance with an embodiment of the present invention, and to FIGS. 2 and 3 which schematically illustrate a front view and a side view respectively, of the testing apparatus of FIG. 1 during testing in accordance with an embodiment of the present invention. The testing apparatus includes a
testing assembly 10 having ahead portion 12, ahead support structure 14 and twolight funnels 18, each having alight collection end 42 and adetection end 44. As shown particularly in FIG. 3,head assembly 10 also includes anelectrical probe arrangement 16 including a plurality of separately addressable p-contactelectrical probes 48, as described in detail below. - The testing apparatus further includes a test
sample support device 24 having a surface 25 for supporting aholding substrate 22, e.g., an adhesive film. A plurality ofsemiconductor laser bars 20, each having 50 and 52 and aopposite edges top surface 54, are mounted onsubstrate 22 such thattop surface 54faces testing assembly 10. As shown particularly in FIG. 3, eachsemiconductor bar 20 includes a series ofsemiconductor laser devices 45 having p-contacts 46 ontop surface 54. Eachlaser device 45, when activated, emits light through 50 and 52 ofedges bar 20.Support device 24 may include a plurality ofvacuum suction channels 26 which extend through the support device and havesuction apertures 27 at surface 25. - As shown particularly in FIGS. 1 and 2, surface 25 may include a generally
level region 36 directly underneathprobe arrangement 16.Region 36 is adapted for placing one oflaser bars 20 at a desired position relative toprobe arrangement 16 andlight funnels 18, for testing as described below. Surface 25 is slanted downwardly and outwardly on either side ofregion 36, such that thelaser bars 20 not being tested will not block or reflect the light emitted by thelaser devices 45 on thelaser bar 20 being tested.Testing assembly 10 further includes aswitching device 40 which is electrically connected, viaconductors 38, to p-contact probes 48 inprobe arrangement 16. -
Testing assembly 10 further includes twolight detectors 32 which are optically coupled todetection ends 44 ofrespective light funnels 18, viaoptical guides 34 which may include optical fibers and/or lenses as are known in the art. - As shown in FIG. 2, during operation, a vacuum is produced in
channels 26, e.g., by a vacuum suction pump (not shown in the drawings), in the direction indicated byarrows 28. The vacuum suction produced atapertures 27, pullssubstrate 22 towards surface 25, conforming the shape offlexible substrate 22 to the shape of surface 25. The vacuum atapertures 27 also ensures thatsubstrate 22 is securely mounted on surface 25. In an embodiment of the present invention, before suction is applied tochannels 26,substrate 22 is positioned on surface 25, using suitable alignment means, for example, precision X-Y-Z Axis servo stages, as is known in the art, such that thelaser bar 20 to be tested is correctly positioned onregion 36 underneathtesting assembly 10. - Once the
bar 20 to be tested is positioned onregion 36,testing assembly 10 may be lowered, using any suitable mechanical means known in the art, untilprobe arrangement 16 is brought into contact with thebar 20 being tested, as shown particularly in FIG. 3. At this point, contact is made between the plurality ofelectrical probes 48 ofarrangement 16 and respective p-contacts 46 oflaser devices 45 onsurface 54 ofbar 20. Alternatively,probe arrangement 16 may be brought into contact with thebar 20 being tested by raisingsupport device 24. Using switchingdevice 40, which may be controlled by suitable hardware or software known in the art, a predetermined bias current is selectively applied to p-contacts 46 of selected ones oflaser devices 45.Switching device 40 preferably supplies a bias current in a predetermined bandwidth suitable for activating the laser devices, as is known in the art, and includes an electrostatic discharge (ESD) protection circuit for protecting the laser devices from potentially damaging ESD. The n-contacts tolaser devices 45 are provided via a common n-contact on the bottom surface ofbar 20, as is known in the art, which may be continuously connected to a predetermined electric potential. In this manner,laser devices 45 may be sequentially activated to emit light via 50 and 52 ofedges bar 20 over 62 and 64, respectively, alongside collection ends 42 of light funnels 18.testing areas - As shown in FIG. 2, light 30 emitted from
50 and 52, overedges 62 and 64, is collected by collectingtesting areas ends 42 of respective light funnels 18 which carry the light, via respective detection ends 44 andoptical guides 34, tolight detectors 32.Light detectors 32 monitor the intensity of light emitted from 50 and 52, respectively, of each of sequentially testededges laser devices 45. Thus, the present invention enables reliable comparative testing ofdifferent laser devices 45 as well as comparative testing between the emissions from 50 and 52 for each testededges laser device 45. Any suitable method and apparatus may be used to analyze the laser or LED emissions of 50 and 52, as detected byedges light detectors 32, for example, the method and apparatus described in U.S. Pat. No. 4,795,976 to Pawlik, the disclosure of which is incorporated herein by reference. - Reference is now made to FIGS. 4 and 5. FIG. 4 schematically illustrates a cross-sectional front view of one of light funnels 18 juxtaposed
edge 52 of one of laser bars 20, during activation of one oflaser devices 45 by switchingapparatus 40 to emit light overtesting area 64. FIG. 5 schematically illustrates a top view of light funnels 18 aligned with 50 and 52 ofrespective edges bar 20, during activation of one oflaser devices 45. As shown particularly in FIG. 4, the light 30 emitted viaedge 52 overtesting area 64 is received via a front surface 60 ofcollection end 42 and is carried by multiple reflection off inner surfaces 56 oflight funnel 18 todetection end 44. The geometry oflight funnel 18 may be designed such that the beam of light 30 exitingdetection end 44 will be a generally parallel light beam. The beam of light 30 exitingdetection end 44 entersoptical guide 34, via an input surface 58, and is carried by the optical guide tolight detector 32, as described above. In an embodiment of the present invention, front surface 60 offunnel 18 and input surface 58 of optical guide 58 are slightly angled to prevent direct reflection of light 30 off inner surfaces 56 oflight funnel 18 and to ensure that a maximum, consistent, portion of light 30 will reachdetector 32. -
Light funnel 18 can be made of any suitable light guiding material, such as glass or optical fiber, which may be shaped, using shaping methods for optical fibers known in the art, to have the funnel shape shown in FIG. 4. Alternatively,light funnel 18 may include a hollow tube having polished surfaces 56, or a tube filled with a highly light-transmissive fluid having a predetermined index of refraction. It should be appreciated that the specific geometry oflight funnel 18 may depend on the materials composition of the funnel as well as the geometry of other parts of the testing apparatus. To obtain maximum reflection oflight 30, surfaces 56 oflight funnel 18 are preferably polished and coated with a highly reflective coating, for example, a gold or “pure white” coating. - It will be appreciated by persons skilled in the art that positioning light funnels 18 in juxtaposition with the entire length of
50 and 52 ofedges bar 20, for sequentially testing all thelaser devices 45 onbar 20 over 62 and 64, respectively, enables efficient, reliable, testing of a large number of laser devices. This testing arrangement is shown most clearly in FIG. 5.testing areas - While certain specific embodiments of the invention are disclosed as typical, the invention is not limited to these particular forms, but rather is applicable broadly to all such variations as fall within the scope of the appended claims. Many modifications and adaptations will be apparent to those skilled in the art to which the invention pertains. Thus, the specific structures and methods discussed in detail above are merely illustrative of specific embodiments of the invention.
Claims (12)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/168,035 US6384612B2 (en) | 1998-10-07 | 1998-10-07 | Method and apparatus for testing the light output of light emitting devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/168,035 US6384612B2 (en) | 1998-10-07 | 1998-10-07 | Method and apparatus for testing the light output of light emitting devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20020003428A1 true US20020003428A1 (en) | 2002-01-10 |
| US6384612B2 US6384612B2 (en) | 2002-05-07 |
Family
ID=22609821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/168,035 Expired - Lifetime US6384612B2 (en) | 1998-10-07 | 1998-10-07 | Method and apparatus for testing the light output of light emitting devices |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US6384612B2 (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006099732A1 (en) * | 2005-03-23 | 2006-09-28 | Tir Systems Ltd. | Apparatus and method for collecting and detecting light emitted by a lighting apparatus |
| US20060226336A1 (en) * | 2005-03-23 | 2006-10-12 | Tir Systems Ltd. | Apparatus and method for collecting and detecting light emitted by a lighting apparatus |
| WO2008023306A1 (en) * | 2006-08-25 | 2008-02-28 | Philips Intellectual Property & Standards Gmbh | Optical lighting device |
| CN102183718A (en) * | 2011-02-25 | 2011-09-14 | 致茂电子(苏州)有限公司 | Method for testing light emitting diode crystal particle |
| EP2388605A1 (en) * | 2010-05-19 | 2011-11-23 | Viveen Limited | Testing a light producing element |
| US20120012871A1 (en) * | 2010-07-15 | 2012-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light emitting device |
| US20120105836A1 (en) * | 2010-11-01 | 2012-05-03 | Samsung Led Co., Ltd. | Apparatus for measuring optical properties of led package |
| US20130201321A1 (en) * | 2012-02-03 | 2013-08-08 | Epistar Corporation | Method and apparatus for testing light-emitting device |
| US8687181B2 (en) * | 2012-02-03 | 2014-04-01 | Epistar Corporation | Method and apparatus for testing light-emitting device |
| WO2015036368A1 (en) * | 2013-09-10 | 2015-03-19 | Osram Opto Semiconductors Gmbh | Testing device and method for testing optoelectronic components |
| CN106535395A (en) * | 2016-11-08 | 2017-03-22 | 东莞市北科电子科技有限公司 | A photoelectric detection structure to deal with failed LEDs |
| CN110017970A (en) * | 2019-05-21 | 2019-07-16 | 深圳市杰普特光电股份有限公司 | Laser bar detection system |
| CN110017971A (en) * | 2019-05-21 | 2019-07-16 | 深圳市杰普特光电股份有限公司 | Laser bar photoelectric detection system |
| CN110749425A (en) * | 2019-10-31 | 2020-02-04 | 厦门大学 | A kind of LED multi-angle optical test device and test method |
| WO2020070148A1 (en) * | 2018-10-04 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Device and method for processing a multiplicity of semiconductor chips |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657446B1 (en) * | 1999-09-30 | 2003-12-02 | Advanced Micro Devices, Inc. | Picosecond imaging circuit analysis probe and system |
| US7064832B2 (en) * | 2003-02-26 | 2006-06-20 | Delaware Capital Formation, Inc. | Color and intensity measuring module for test of light emitting components by automated test equipment |
| CN100523842C (en) * | 2004-04-01 | 2009-08-05 | 温特沃斯实验室公司 | Double side probing of semiconductor devices |
| US7348786B2 (en) * | 2004-08-31 | 2008-03-25 | Georgia Tech Research Corporation | Probe module for testing chips with electrical and optical input/output interconnects, methods of use, and methods of fabrication |
| TWI273251B (en) * | 2006-05-17 | 2007-02-11 | Southern Taiwan University Of | A method for analyzing the reliability of optoelectronic elements rapidly |
| KR20090053490A (en) * | 2007-11-23 | 2009-05-27 | 삼성전자주식회사 | Probe Card and Memory Tester with Optical Transmission |
| WO2010095809A2 (en) * | 2009-02-20 | 2010-08-26 | (주)큐엠씨 | Led chip testing device |
| KR20120061656A (en) * | 2010-12-03 | 2012-06-13 | 삼성엘이디 주식회사 | Tray, Testing Apparatus and Testing Method of LED package using the same |
| TWI431291B (en) * | 2011-07-14 | 2014-03-21 | Chroma Ate Inc | Testing apparatus for light emitting diodes |
| TWM430614U (en) * | 2011-12-21 | 2012-06-01 | Youngtek Electronics Corp | Fiber optic light guiding top cover structure |
| DE102012224323B4 (en) * | 2012-12-21 | 2019-07-25 | Continental Automotive Gmbh | Method and device for functional testing of lamps |
| JP6043246B2 (en) * | 2013-07-11 | 2016-12-14 | 株式会社アドバンテスト | Device interface apparatus, test apparatus, and test method |
| GB2521176A (en) * | 2013-12-11 | 2015-06-17 | Infiniled Ltd | Apparatus and method for profiling a beam of a light emitting semiconductor device |
| CN104181450A (en) * | 2014-09-02 | 2014-12-03 | 中国科学院半导体研究所 | System and method for testing light-emitting diode response characteristics |
| US11662249B2 (en) * | 2019-04-05 | 2023-05-30 | The United States Of America, As Represented By The Secretary Of The Navy | System for testing under controlled emulated atmospheric conditions |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4775640A (en) * | 1987-05-01 | 1988-10-04 | American Telephone And Telegraph Company | Electronic device test method and apparatus |
| US5381103A (en) * | 1992-10-13 | 1995-01-10 | Cree Research, Inc. | System and method for accelerated degradation testing of semiconductor devices |
-
1998
- 1998-10-07 US US09/168,035 patent/US6384612B2/en not_active Expired - Lifetime
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006099732A1 (en) * | 2005-03-23 | 2006-09-28 | Tir Systems Ltd. | Apparatus and method for collecting and detecting light emitted by a lighting apparatus |
| US20060226336A1 (en) * | 2005-03-23 | 2006-10-12 | Tir Systems Ltd. | Apparatus and method for collecting and detecting light emitted by a lighting apparatus |
| WO2008023306A1 (en) * | 2006-08-25 | 2008-02-28 | Philips Intellectual Property & Standards Gmbh | Optical lighting device |
| US20100001653A1 (en) * | 2006-08-25 | 2010-01-07 | Koninklijke Philips Electronics N.V. | Optical lighting device |
| EP2388605A1 (en) * | 2010-05-19 | 2011-11-23 | Viveen Limited | Testing a light producing element |
| US20120012871A1 (en) * | 2010-07-15 | 2012-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light emitting device |
| US8476659B2 (en) * | 2010-07-15 | 2013-07-02 | Tsmc Solid State Lighting Ltd. | Light emitting device |
| US20120105836A1 (en) * | 2010-11-01 | 2012-05-03 | Samsung Led Co., Ltd. | Apparatus for measuring optical properties of led package |
| CN102544255A (en) * | 2010-11-01 | 2012-07-04 | 三星Led株式会社 | Apparatus for measuring optical properties of led package |
| CN102183718A (en) * | 2011-02-25 | 2011-09-14 | 致茂电子(苏州)有限公司 | Method for testing light emitting diode crystal particle |
| US20130201321A1 (en) * | 2012-02-03 | 2013-08-08 | Epistar Corporation | Method and apparatus for testing light-emitting device |
| US8687181B2 (en) * | 2012-02-03 | 2014-04-01 | Epistar Corporation | Method and apparatus for testing light-emitting device |
| US8749773B2 (en) * | 2012-02-03 | 2014-06-10 | Epistar Corporation | Method and apparatus for testing light-emitting device |
| US9316687B2 (en) | 2012-02-03 | 2016-04-19 | Epistar Corporation | Method and apparatus for testing light-emitting device |
| WO2015036368A1 (en) * | 2013-09-10 | 2015-03-19 | Osram Opto Semiconductors Gmbh | Testing device and method for testing optoelectronic components |
| CN106535395A (en) * | 2016-11-08 | 2017-03-22 | 东莞市北科电子科技有限公司 | A photoelectric detection structure to deal with failed LEDs |
| WO2020070148A1 (en) * | 2018-10-04 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Device and method for processing a multiplicity of semiconductor chips |
| US11378590B2 (en) | 2018-10-04 | 2022-07-05 | Osram Opto Semiconductors Gmbh | Device and method for processing a multiplicity of semiconductor chips |
| CN110017970A (en) * | 2019-05-21 | 2019-07-16 | 深圳市杰普特光电股份有限公司 | Laser bar detection system |
| CN110017971A (en) * | 2019-05-21 | 2019-07-16 | 深圳市杰普特光电股份有限公司 | Laser bar photoelectric detection system |
| CN110749425A (en) * | 2019-10-31 | 2020-02-04 | 厦门大学 | A kind of LED multi-angle optical test device and test method |
Also Published As
| Publication number | Publication date |
|---|---|
| US6384612B2 (en) | 2002-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6384612B2 (en) | Method and apparatus for testing the light output of light emitting devices | |
| US6573702B2 (en) | Method and apparatus for cleaning electronic test contacts | |
| US5666063A (en) | Method and apparatus for testing an integrated circuit | |
| US5834773A (en) | Method and apparatus for testing the function of microstructure elements | |
| US5541416A (en) | Estimation method and apparatus for semiconductor light emitting element capable of inspecting by wafer | |
| US6686993B1 (en) | Probe card for testing optical micro electromechanical system devices at wafer level | |
| US8699012B2 (en) | Optical fiber alignment measurement method and apparatus | |
| JP4143067B2 (en) | System and method for simultaneous precision die bonding of multiple optical elements onto a single substrate | |
| JP3628344B2 (en) | Semiconductor inspection equipment | |
| JP2008002858A (en) | Optical semiconductor inspection equipment | |
| KR102517249B1 (en) | Compact opto-electric probe | |
| US6084667A (en) | System and method for molecular sample measurement | |
| US5307154A (en) | Semiconductor chip position detector | |
| US5801822A (en) | Ophthalmic lens inspection system | |
| US20200335370A1 (en) | Dividing apparatus | |
| JPS6231136A (en) | Optical semiconductor device evaluation equipment | |
| WO1996026450A1 (en) | Laser/pin assembly with integrated burn-in assembly | |
| EP1546785B1 (en) | Spectral broadband and a high efficiency light source | |
| EP0229557B1 (en) | Method of reciprocally positioning an optical fibre and a semiconductor laser, and positioning apparatus for carrying out this method | |
| US5617036A (en) | Laser/pin assembly with integrated burn-in assembly | |
| KR20130086642A (en) | Sensor apparatus for detecting and monitoring a crack propagating through a structure | |
| US6930769B1 (en) | Optical sensor module tester | |
| US20030178469A1 (en) | Method and device for determining the vectorial distance between the capillary and the image recognition system of a wire bonder | |
| KR101015792B1 (en) | Inspection jig for side emitting LED array | |
| US6590398B1 (en) | Fixture-less bare board tester |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: LUCENT TECHNOLOGIES, NEW JERSEY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:FREUND, JOSEPH M.;PRZYBYLEK, GEORGE J.;ROMERO, DENNIS M.;AND OTHERS;REEL/FRAME:009631/0805 Effective date: 19981124 |
|
| STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
| FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
| FPAY | Fee payment |
Year of fee payment: 4 |
|
| FPAY | Fee payment |
Year of fee payment: 8 |
|
| FPAY | Fee payment |
Year of fee payment: 12 |
|
| AS | Assignment |
Owner name: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AG Free format text: PATENT SECURITY AGREEMENT;ASSIGNORS:LSI CORPORATION;AGERE SYSTEMS LLC;REEL/FRAME:032856/0031 Effective date: 20140506 |
|
| AS | Assignment |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AGERE SYSTEMS LLC;REEL/FRAME:035365/0634 Effective date: 20140804 |
|
| AS | Assignment |
Owner name: LSI CORPORATION, CALIFORNIA Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032856-0031);ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT;REEL/FRAME:037684/0039 Effective date: 20160201 Owner name: AGERE SYSTEMS LLC, PENNSYLVANIA Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032856-0031);ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT;REEL/FRAME:037684/0039 Effective date: 20160201 |
|
| AS | Assignment |
Owner name: BANK OF AMERICA, N.A., AS COLLATERAL AGENT, NORTH CAROLINA Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.;REEL/FRAME:037808/0001 Effective date: 20160201 Owner name: BANK OF AMERICA, N.A., AS COLLATERAL AGENT, NORTH Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.;REEL/FRAME:037808/0001 Effective date: 20160201 |
|
| AS | Assignment |
Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD., SINGAPORE Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:BANK OF AMERICA, N.A., AS COLLATERAL AGENT;REEL/FRAME:041710/0001 Effective date: 20170119 Owner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD Free format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:BANK OF AMERICA, N.A., AS COLLATERAL AGENT;REEL/FRAME:041710/0001 Effective date: 20170119 |
|
| AS | Assignment |
Owner name: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITE Free format text: MERGER;ASSIGNOR:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.;REEL/FRAME:047195/0026 Effective date: 20180509 |
|
| AS | Assignment |
Owner name: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITE Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE OF MERGER PREVIOUSLY RECORDED ON REEL 047195 FRAME 0026. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER;ASSIGNOR:AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.;REEL/FRAME:047477/0423 Effective date: 20180905 |