US20010049205A1 - Method of depositing silicon oxides - Google Patents

Method of depositing silicon oxides Download PDF

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US20010049205A1
US20010049205A1 US09410234 US41023499A US20010049205A1 US 20010049205 A1 US20010049205 A1 US 20010049205A1 US 09410234 US09410234 US 09410234 US 41023499 A US41023499 A US 41023499A US 20010049205 A1 US20010049205 A1 US 20010049205A1
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silicon
oxide
doping
temperature
depositing
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Gurtej S. Sandhu
Ravi Iyer
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Gurtej S. Sandhu
Ravi Iyer
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/0214Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604Deposition from a gas or vapour
    • H01L21/31608Deposition of SiO2
    • H01L21/31612Deposition of SiO2 on a silicon body

Abstract

The invention comprises methods of depositing silicon oxide material onto a substrate. In but one aspect of the invention, a method of depositing a silicon oxide containing layer on a substrate includes initially forming a layer comprising liquid silicon oxide precursor onto a substrate. After forming the layer, the layer is doped and transformed into a solid doped silicon oxide containing layer on the substrate. In a preferred implementation, the doping is by gas phase doping and the liquid precursor comprises Si(OH)4. In the preferred implementation, the transformation occurs by raising the temperature of the deposited liquid precursor to a first elevated temperature and polymerizing the deposited liquid precursor on the substrate. The temperature is continued to be raised to a second elevated temperature higher than the first elevated temperature and a solid doped silicon oxide containing layer is formed on the substrate.

Description

    TECHNICAL FIELD
  • [0001]
    This invention relates to methods of depositing silicon oxides, such as silicon dioxide, over substrates.
  • BACKGROUND OF THE INVENTION
  • [0002]
    In methods of forming integrated circuits, it is frequently desired to isolate components of the integrated circuits from one another with insulative material. Such insulative material may comprise a number of materials, including for example, silicon dioxide, silicon nitride, and undoped semiconductive material. Although such materials have acceptable insulative properties in many applications, the materials disadvantageously have high dielectric constants which can lead to capacitive coupling between proximate conductive elements. For instance, silicon dioxide has a dielectric constant of about 4, silicon nitride has a dielectric constant of about 8, and undoped silicon has a dielectric constant of about 12. As circuit density increases with device geometries becoming smaller, the associated RC delay time increases, and hence there is a need to reduce capacitance below that of silicon dioxide material. Further as geometries have become smaller, it is much more difficult to conformally deposit layers into contact and other openings having high aspect ratio.
  • [0003]
    One known way of achieving desired lower dielectric constant silicon oxides, such as silicon dioxide, is to provide suitable dopant atoms within the material. Fluorine is but one example, to provide a fluorinated silicon oxide of the general formula FxSiOy.
  • [0004]
    One recently developed technique for achieving suitable deposition into substrates having high aspect ratio topography, has been developed by Electrotech Limited of Bristol, U.K., and is referred to as a Flowfill™ technology. In such process, SiH4 and H2O2 are separately introduced into a CVD chamber, such as a parallel plate reaction chamber. The reaction rate between SiH4 and H2O2 can be moderated by the introduction of nitrogen into the reaction chamber. The wafer is ideally maintained at a suitably low temperature, such as 0° C. at an exemplary pressure of 1 Torr to achieve formation of a silanol-type structure of the formula Si(OH)4 which condenses onto the wafer surface. Although the reaction occurs in the gas phase, the deposited Si(OH)4 is in the form of a very viscous liquid which flows to fill very small gaps on the wafer surface. And as deposition thickness increases, surface tension drives the deposited layer flat, thus forming a planarized layer over the substrate.
  • [0005]
    The liquid Si(OH)4 is typically then converted to a silicon dioxide structure by a two-step process. First, polymerization of the liquid film is promoted by increasing the temperature to about 100° C. to result in solidification and formation of a polymer layer. Thereafter, the temperature is raised to approximately 450° C. to depolymerize the substance and form SiO2. The depolymerization temperature also provides the advantage of driving undesired water from the resultant SiO2 layer.
  • [0006]
    Doping of such SiO2 layer has in the past been attempted by providing a dopant gas in combination with the gaseous H2O2 and gaseous SiH4 precursors during the initial formation of the Si(OH)4 liquid. Such deposition techniques have not met with much success and few if any suitable chemistries have been discovered for such to date. Most attempts for dopant incorporation in this manner invariably result in the loss of the desired flow-filling properties of the films.
  • [0007]
    Accordingly, it would be desirable to develop alternate methods of achieving doped silicon oxides, such as silicon dioxides, formed via a process using silicon oxide precursors, such as for example Si(OH)4.
  • SUMMARY OF INVENTION
  • [0008]
    The invention comprises methods of depositing silicon oxide material onto a substrate. In but one aspect of the invention, a method of depositing a silicon oxide containing layer on a substrate includes initially forming a layer comprising liquid silicon oxide precursor onto a substrate. After forming the layer, the layer is doped and transformed into a solid doped silicon oxide containing layer on the substrate. In a preferred implementation, the doping is by gas phase doping and the liquid precursor comprises Si(OH)4. In the preferred implementation, the transformation occurs by raising the temperature of the deposited liquid precursor to a first elevated temperature and polymerizing the deposited liquid precursor on the substrate. The temperature is continued to be raised to a second elevated temperature higher than the first elevated temperature and a solid doped silicon oxide containing layer is formed on the substrate.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • [0009]
    This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).
  • [0010]
    In accordance with one aspect of the invention, a silane gas, such as SiH4 or Si2H6, is combined with gaseous H2O2 within a chemical vapor deposition reactor at a temperature of from about −10° C. to about 30° C. to deposit a liquid polymer precursor onto a substrate within the reactor. A specific example wafer temperature is 0° C. with an exemplary pressure being 1 Torr. An example flow rate for a six liter reactor for SiH4 and H2O2 are 100 sccm and 0.75 gm/min, respectively. After about 120 minutes, a 6000 Angstroms thick liquid layer deposits. Such will form Si(OH)4, in this example in liquid form, onto a substrate. In this example, the deposited layer will consist essentially of Si(OH)4. Such provides but one example of forming a liquid silicon oxide precursor onto a substrate.
  • [0011]
    The deposited precursor is then doped, preferably by gas phase doping. on the substrate and substantially after its formation. The selected gas for preferred gas phase doping will be dependent on the ultimate desired dopant within the ultimate silicon oxide layer. For example, PH3 or phosphates such as trialkyl phosphates (i.e., trimethyl phosphate, triethyl phosphate) and phosphitees such as dialkyl phosphates (i.e. dimethyl phosphite) are example and preferred gases where the dopant is to be phosphorous. B2H6 is an example and preferred gas where the dopant is to be boron. NF3 and F2 are example and preferred gases (alone or in combination) where /the dopant material is to be fluorine. C2H6, trimethylsilane [(CH3)3SiH] and CH4 are example and preferred gases (alone or in combination) where the desired dopant is to be carbon. NF3 and NH3 are example and preferred gases (alone or in combination) where the dopant material is to be nitrogen. Various combinations of these gases could also be used to incorporate multiple different dopants. An example doping gas flow rate for a six liter reactor is 500 sccm.
  • [0012]
    Doping could also be provided using gas phase doping with plasma. For example, a plasma can be struck with the dopant gases proximate the formed liquid oxide precursor. The dopants are then available in activated states and may incorporate into the film more easily. Further, the dopants can be formed as plasma external of the processing chamber holding the wafer for doping, with the plasma dopants then being transported to the chamber holding the wafer for such doping.
  • [0013]
    Preferred reactor temperature and pressure for the gas phase doping is preferably at a temperature of less than or equal to about 50° C. and a pressure below 100 Torr. Temperature and pressure are ideally selected to achieve dopant diffusion through the total depth of the liquid layer.
  • [0014]
    The temperature of the liquid is also preferably maintained at or below 50° C. during the gas phase doping to avoid any substantially polymerizing of the liquid in advance of the doping. The temperature of the deposited liquid precursor is then raised to a first elevated temperature and polymerizing thereof occurs on the substrate. An exemplary and preferred first elevated temperature is at least about 100° C. The temperature is preferably held at this first elevated temperature for a period of time, for example 1 minute. Then, the temperature of the polymerized precursor is raised to a second elevated temperature which is higher than the first elevated temperature, and a solid doped silicon oxide containing layer is effectively formed on the substrate. An exemplary second elevated temperature is at least about 350° C., with 450° C. being preferred. Pressure is preferably maintained constant during both temperature ramps at, for example, form 0.1 Torr to 100 Torr.
  • [0015]
    Such provides but one example of transforming a substantially non-silicon oxide containing precursor layer into a solid doped silicon oxide containing layer on a substrate. The second elevated temperature effectively also provides an advantage of driving undesired water and other impurities from the layer. In the above-described exemplary transforming, such comprises initial polymerizing followed by depolymerizing of a silicon oxide precursor. Also preferably, the gas phase or other doping is completed prior to any substantial transforming of the doped layer to a polymer layer or silicon dioxide layer. However, gas phase or other doping with desired impurities could also occur during the temperature raising or other transformation. Thus in the preferred embodiment, the doping occurs both prior to the transforming, and is completed prior to the transforming. Also, the gas phase doping is completed prior to the temperature raising to the first temperature.
  • [0016]
    In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents.

Claims (41)

  1. 1. A method of depositing a silicon oxide containing layer on a substrate comprising:
    forming a layer comprising liquid silicon oxide precursor onto a substrate; and
    after, forming the layer, doping and transforming the layer into a solid doped silicon oxide containing layer on the substrate.
  2. 2. The method of depositing silicon oxide of
    claim 1
    wherein the doping occurs prior to the transforming.
  3. 3. The method of depositing silicon oxide of
    claim 1
    wherein the doping is completed prior to the transforming.
  4. 4. The method of depositing silicon oxide of
    claim 1
    wherein the doping comprises gas phase doping.
  5. 5. The method of depositing silicon oxide of
    claim 1
    wherein the doping comp rises gas phase doping using dopants provided as plasma proximate the layer.
  6. 6. The method of depositing silicon oxide of
    claim 1
    wherein the forming occurs in one processing chamber, the doping comprises gas phase doping using dopants provided as plasma proximate the layer, the dopants being formed as plasma external of the one processing chamber and being transported to the processing chamber.
  7. 7. The method of depositing silicon oxide of
    claim 1
    wherein the doping is conducted at a temperature of less than or equal to about 50° C.
  8. 8. The method of depositing silicon oxide of
    claim 1
    wherein the liquid silicon oxide precursor comprises Si(OH)4.
  9. 9. The method of depositing silicon oxide of
    claim 1
    wherein the liquid silicon oxide precursor consists essentially of Si(OH)4.
  10. 10. The method of depositing silicon oxide of
    claim 1
    wherein the transforming comprises polymerizing and depolymerizing.
  11. 11. The method of depositing silicon oxide of
    claim 1
    wherein the doping comprises a carbon containing dopant.
  12. 12. The method of depositing silicon oxide of
    claim 1
    wherein the doping comprises a dopant selected from the group consisting of phosphorus, fluorine, nitrogen carbon and boron, or mixtures thereof.
  13. 13. A method of depositing a silicon oxide containing layer on a substrate comprising:
    forming a liquid silicon oxide precursor onto a substrate;
    gas phase doping the liquid silicon oxide precursor on the substrate; and
    transforming the liquid doped silicon oxide precursor into a solid doped silicon oxide containing layer on the substrate.
  14. 14. The method of depositing silicon oxide of
    claim 13
    wherein the forming and the gas phase doping is conducted at substantially the same temperature.
  15. 15. The method of depositing silicon oxide of
    claim 13
    wherein the forming and the gas phase doping is conducted at substantially the same pressure.
  16. 16. The method of depositing silicon oxide of
    claim 13
    wherein the doping is conducted at a temperature of less than or equal to about 50° C.
  17. 17. The method of depositing silicon oxide of
    claim 13
    wherein the transforming comprises polymerizing and depolymerizing.
  18. 18. The method of depositing silicon oxide of
    claim 13
    wherein the gas phase doping is completed prior to any substantial transforming.
  19. 19. The method of depositing silicon oxide of
    claim 13
    wherein the gas phase doping comprises a doping gas selected from the group consisting of PH3, B2H6, F2, NH3, NF3, C2F6 and CH4, or mixtures thereof.
  20. 20. The method of depositing silicon oxide of
    claim 13
    wherein the doping comprises using dopants provided as plasma proximate the layer.
  21. 21. The method of depositing silicon oxide of
    claim 13
    wherein the forming occurs in one processing chamber, the doping comprises using dopants provided as plasma proximate the layer, the dopants being formed as plasma external of the one processing chamber and being transported to the processing chamber.
  22. 22. A method of depositing a silicon oxide containing layer on a substrate comprising:
    forming Si(OH)4 onto a substrate;
    after the forming, doping the Si(OH)4 on the substrate; and
    transforming the doped Si(OH)4 into a solid doped silicon oxide containing layer on the substrate.
  23. 23. The method of depositing silicon oxide of
    claim 22
    wherein the doping is completed prior to any substantial transforming.
  24. 24. The method of depositing silicon oxide of
    claim 22
    wherein the doping comprises gas phase doping.
  25. 25. The method of depositing silicon oxide of
    claim 22
    wherein the Si(OH)4 is in liquid form during the doping.
  26. 26. The method of depositing silicon oxide of
    claim 22
    wherein the doping is conducted at a temperature of less than or equal to about 50° C.
  27. 27. The method of depositing silicon oxide of
    claim 22
    wherein the transforming comprises polymerizing and depolymerizing.
  28. 28. The method of depositing silicon oxide of
    claim 22
    wherein the doping comprises gas phase doping using dopants provided as plasma proximate the layer.
  29. 29. The method of depositing silicon oxide of
    claim 22
    wherein the forming occurs in one processing chamber, the doping comprises gas phase doping using dopants provided as plasma proximate the layer, the dopants being formed as plasma external of the one processing chamber and being transported to the processing chamber.
  30. 30. A method of depositing a silicon oxide containing layer on a substrate comprising:
    combining a silane gas with H2O2 at a temperature of from about −10° C. to about 30° C. to deposit a liquid polymer precursor onto a substrate;
    gas phase doping the deposited liquid silicon oxide precursor on the substrate;
    raising the temperature of the deposited liquid precursor to a first elevated temperature and polymerizing the deposited liquid precursor on the substrate; and
    raising the temperature of the polymerized precursor to a second elevated temperature higher than the first elevated temperature and forming a solid doped silicon oxide containing layer on the substrate.
  31. 31. The method of depositing silicon oxide of
    claim 30
    wherein the deposit of liquid polymer precursor and the gas phase doping is conducted at substantially the same temperature.
  32. 32. The method of depositing silicon oxide of
    claim 30
    wherein the deposit of liquid polymer precursor and the gas phase doping is conducted at substantially the same pressure.
  33. 33. The method of depositing silicon oxide of
    claim 30
    wherein the first elevated temperature is at least about 100° C.
  34. 34. The method of depositing silicon oxide of
    claim 30
    wherein the second elevated temperature is at least about 350° C.
  35. 35. The method of depositing silicon oxide of
    claim 30
    wherein the first elevated temperature is at least about 100° C., and the second elevated temperature is at least about 350° C.
  36. 36. The method of depositing silicon oxide of
    claim 30
    wherein the doping is conducted at a temperature of less than or equal to about 50° C.
  37. 37. The method of depositing silicon oxide of
    claim 30
    wherein the gas phase doping is completed prior to the temperature raising to the first temperature.
  38. 38. The method of depositing silicon oxide of
    claim 30
    wherein the gas phase doping is completed prior to the polymerizing.
  39. 39. The method of depositing silicon oxide of
    claim 30
    wherein the gas phase doping comprises a doping gas selected from the group consisting of PH3, B2H6, F2, NH3, NF3, C2F6 and CH4, or mixtures thereof.
  40. 40. The method of depositing silicon oxide of
    claim 30
    wherein the doping comprises gas phase doping using dopants provided as is plasma proximate the layer.
  41. 41. The method of depositing silicon oxide of
    claim 30
    wherein the forming occurs in one processing chamber, the doping comprises gas phase doping using dopants provided as plasma proximate the layer, the dopants being formed as plasma external of the one processing chamber and being transported to the processing chamber.
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Cited By (19)

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US7223707B1 (en) 2004-12-30 2007-05-29 Novellus Systems, Inc. Dynamic rapid vapor deposition process for conformal silica laminates
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