US20010035125A1 - Coater having controllable pressurized process chamber for semiconductor processing - Google Patents
Coater having controllable pressurized process chamber for semiconductor processing Download PDFInfo
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- US20010035125A1 US20010035125A1 US09/885,230 US88523001A US2001035125A1 US 20010035125 A1 US20010035125 A1 US 20010035125A1 US 88523001 A US88523001 A US 88523001A US 2001035125 A1 US2001035125 A1 US 2001035125A1
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- photoresist
- process chamber
- coater
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Definitions
- the present invention relates to a semiconductor manufacturing process and, in particular, to a coater for dispensing an organic and/or inorganic material on a substrate in a controllable pressurized process chamber.
- a substrate such as a wafer
- a wafer is typically coated with an inorganic and/or organic material in a process step.
- a wafer is coated with a photoresist.
- the wafer is first positioned in a coater, or specifically on a wafer chuck.
- a motor spins the wafer chuck and wafer while the photoresist is dispensed onto the center of the wafer.
- the spinning imparts an angular torque onto the photoresist, which forces the photoresist out in a radial direction, ultimately covering the wafer.
- This semiconductor manufacturing process step is generally known as “the spin-on photoresist step”.
- the photoresist coated wafer then may be removed from the coater and baked to form a photoresist layer on the wafer.
- a solvent vapor is typically introduced into an area near the surface of the wafer in order to control the coating of the photoresist.
- the photoresist tends to cure prematurely due to the evaporation of solvent in the photoresist.
- a non-uniform surface is created.
- a flat plate may be positioned above the wafer forming a very small gap to trap the solvent fumes from the photoresist during the spin-on step in order to minimize the rate at which the photoresist cures.
- the introduction of solvent vapors and a plate does not adequately solve the premature curing of photoresist and the resulting non-uniformly coated wafer surface.
- the photoresist is deposited upon a preexisting varied wafer topology.
- the wafer may have undergone previous manufacturing process steps creating the varied wafer topology.
- a uniform planar photoresist region on a semiconductor device is important to offset the effects of varied wafer topology.
- semiconductor manufacturing process steps require a uniform planar region in order to have a uniform process.
- a uniform planarized photoresist surface or layer will reduce semiconductor device manufacturing defects and improve semiconductor reliability and cost.
- the uniform planarization of a photoresist layer depends on many factors.
- One of these factors includes the pressure surrounding the formation of the photoresist layer on the wafer.
- the pressure surrounding the wafer substrate surface during the photoresist spin-on step affects the evaporation rate of the solvent in the photoresist and eventually the surface uniformity of the photoresist layer.
- Another factor affecting photoresist planarization includes the chemical composition of the environment during the photoresist spin-on step.
- a solvent vapor-rich and contaminant-free environment is desirable in the photoresist spin-on step.
- a solvent vapor-rich environment will reduce solvent evaporation from the photoresist.
- contaminants from the surrounding air entering the coater should be eliminated.
- Chemical contaminants, such as n-butyl acetate fumes, from processes elsewhere in the manufacturing of a semiconductor reduce the adhesion of the photoresist to the wafer substrate and should be eliminated.
- solid particles generated by operators or process equipment adjacent to the coater should not be allowed to enter the photoresist spin-on process step.
- Coaters typically waste a large amount of photoresist during the photoresist spin-on step. As much as 97% of the photoresist may be spun off the surface of the wafer and eventually not directly used in forming the photoresist layer.
- the wasted photoresist may add significant costs to the production of a wafer containing semiconductor devices. In order to coat a wafer with photoresist, approximately $20 may be expended on only the photoresist. These costs are expected to rise as semiconductor device geometries are reduced in order to obtain faster operating speeds. Furthermore, there are added costs in properly disposing of the photoresist waste which may be considered hazardous waste.
- a coater for dispensing organic and/or inorganic material, such as photoresist, onto a wafer substrate surface in a controlled environment.
- the controlled environment would enable forming uniformly planarized photoresist layers in a contaminant reduced environment, thereby reducing semiconductor manufacturing costs and defects while enhancing semiconductor reliability and performance.
- a photoresist coater having a controllable process chamber.
- the controllable process chamber enables the formation of a uniform planarized photoresist layer on a wafer in a predetermined pressure and chemical environment.
- the coater also includes a recycling apparatus for storing excess photoresist.
- the photoresist coater includes a wafer chuck having a wafer chuck surface for positioning a wafer substrate to be coated with the photoresist.
- a spin motor is coupled to the wafer chuck and rotates the wafer chuck.
- a lower housing section having a first exhaust opening is coupled to the wafer chuck and an upper housing section is coupled to the lower housing section forming a process chamber surrounding the wafer chuck surface.
- a vacuum device is coupled to the lower housing section and creates back pressure in the process chamber through the first exhaust opening.
- a control device coupled to the lower housing controls the pressure in the process chamber.
- the photoresist coater includes an upper housing section having a material dispensing opening and a lower housing section having an exhaust opening.
- the lower housing section is positionable to access the process chamber.
- the upper housing section also includes a cavity for containing solvent vapor and a plurality of cavity openings for introducing solvent vapor into the process chamber.
- the lower housing section includes an opening for introducing nitrogen into the process chamber.
- the photoresist coater includes a photoresist recycling apparatus coupled to an exhaust tube for storing unused photoresist from the process chamber.
- the photoresist recycling apparatus includes a photoresist container coupled to a control device for sealing the photoresist container.
- the photoresist recycling apparatus includes a collection tube having a baffle coupled to the exhaust tube.
- the collection tube is further coupled to a vacuum.
- the collection tube is coupled to a reservoir for holding unused photoresist.
- a process for forming a photoresist layer on a wafer substrate in a pressurized controllable process chamber comprises the steps of opening the process chamber and positioning the wafer substrate on a wafer chuck in the process chamber.
- the process chamber is then closed.
- the process chamber is then evacuated and the chamber value is set to a predetermined setting.
- the process chamber is pressurized with a solvent vapor.
- the photoresist is applied and the wafer chuck is spun, while nitrogen may be introduced.
- the chamber value is then opened.
- FIG. 1 illustrates a side cross sectional view of a coater having a controllable pressurized process chamber according to the present invention.
- FIG. 2 illustrates a top view of a coater having a controllable pressurized process chamber according to the present invention.
- FIG. 3 illustrates a coater having a controllable pressurized process chamber and a photoresist recycling container according to the present invention.
- FIG. 4 illustrates a coater having a controllable pressurized process chamber and photoresist recycling apparatus according to the present invention.
- FIGS. 5 a - b illustrate a logic flow chart for processing a wafer in a coater having a controllable pressurized process chamber according to the present invention.
- FIG. 1 illustrates a side cross sectional view of a coater 10 having a controllable pressurized process chamber 12 accordingly to the present invention.
- Process chamber 12 is formed by a housing having an upper section 11 and a lower section 19 .
- Upper section 11 is attached to lower housing section 19 by representative O-ring seals 25 .
- the sealed process chamber 12 allows for a controlled environment in applying a photoresist to a substrate 9 , such as a wafer, or more specifically, a silicon wafer.
- substrate 9 such as a wafer, or more specifically, a silicon wafer.
- Other materials may be likewise dispensed upon substrate 9 , such as viscous polymers, spin-on-glass and anti-reflection coating materials.
- Contaminants introduced into the photoresist are reduced and photoresist planarization is enhanced by controlling the environment in process chamber 12 .
- Two housing sections are used to form process chamber 12 rather than a single housing construction.
- the double housing section design allows for a user to access the process chamber 12 .
- the manufacturability of coater 10 is also enhanced by forming process chamber 12 from two housing sections rather than constructing a single housing.
- Wafer chuck 13 having wafer chuck surface 13 a is positioned in process chamber 12 .
- Wafer chuck surface 13 a is used for positioning the wafer and is coupled to spin motor 15 .
- a vacuum wafer chuck 13 is used.
- a vacuum channel internal to wafer chuck 13 and motor 15 is used to secure the substrate 9 on the wafer chuck surface 13 a .
- a wafer chuck vacuum may be coupled to motor 15 and create negative pressure in the vacuum channel, thus securing the substrate 9 to wafer chuck surface 13 a .
- an electrostatic wafer chuck using electrostatic attraction forces may be used in securing the substrate 9 .
- an electrostatic wafer chuck as known by one of ordinary skill in the art, may be required.
- Motor 15 is coupled to mount bracket 14 , which is supported by posts 39 a and 39 b .
- the posts 39 a and 39 b are likewise coupled to base plate 40 .
- Spin motor 15 is controlled by signals on wire leads 27 .
- Spin motor 15 may operate from 0-10,000 revolutions per minute (“rpm”).
- rpm revolutions per minute
- Spin motor 15 in response to signals on wire leads 27 , spins wafer chuck 13 and substrate 9 during the spin-on process step.
- the rpm setting will depend upon a variety of process step parameters, such as desired chamber 12 pressure and photoresist type.
- Spin motor 15 as well as air cylinder 42 , control device 30 , control device 34 , pressure regulator 53 , nitrogen source 58 and vacuum 38 are controlled by controller 57 , as illustrated in FIG. 2. Controller 57 generates the appropriate electrical signals at predetermined times on the various wire leads to control the spin-on-process step.
- Upper housing section 11 includes openings 22 and 23 .
- Opening 23 is used for introducing an organic and/or inorganic material, or in particular a photoresist, into the process chamber 12 .
- the photoresist is dispensed onto the center of substrate 9 as spin motor 15 spins wafer chuck 13 and the substrate 9 .
- opening 22 is used for introducing a solvent vapor into process chamber 12 through cavity 20 in upper housing section 11 .
- opening 22 may be coupled to a vapor delivery system 50 , as understood by one of ordinary skill in the art, for generating solvent vapor at a specified pressure.
- vapor delivery system 50 is coupled to opening 22 by way of pressure regulator 53 and hoses 51 and 52 .
- vapor delivery system 50 is coupled to pressure regulator 53 by hose 51 .
- vapor delivery system 50 may be a vaporizer.
- Pressure regulator 53 then controls the pressure of solvent vapor introduced into opening 22 through hose 52 .
- Openings 26 a - b act as a shower head in introducing solvent vapor into process chamber 12 from cavity 20 .
- the uniform spacing of openings 26 a - b and cavity 20 enable a uniform introduction of solvent vapor into process chamber 12 .
- cavity 20 is formed in the shape of a flat, thin ring, as illustrated in FIGS. 1 and 2. The solvent vapor and excess photoresist exits through exhaust mount 17 a - b and exhaust tubes 16 a - b.
- Opening 24 in lower housing section 19 is used for introducing nitrogen into process chamber 12 .
- opening 24 is a circular opening formed between the baffle of lower housing section 19 and the bottom of substrate 9 .
- Nitrogen is introduced through openings 24 to eliminate back side contamination or photoresist build-up on the outer edge of substrate 9 .
- Nitrogen source 58 and nitrogen control valve 70 along with hose 59 , introduce nitrogen into openings 24 , as illustrated in FIG. 2.
- Openings 24 in conjunction with the formation of lower housing section 19 allow for nitrogen to be directed toward the edge of a substrate 9 and thereby reducing the buildup of photoresist at the outer edge of substrate 9 .
- the formation of lower housing section 19 creates a laminar air flow at the outer edge of substrate 9 to eliminate bottom Edge-Bead-Removal (“EBR”).
- EBR Edge-Bead-Removal
- the pressure of process chamber 12 is controlled in order to enhance the uniform formation of a photoresist layer on substrate 9 .
- the pressure and chemical concentration surrounding the formation of a photoresist layer on substrate 9 the evaporation of solvent in the photoresist or cure rate may be controlled. If the area surrounding the wafer is saturated with solvent vapor, solvent evaporation is reduced or eliminated. This in turn controls the uniformity or planarization of photoresist on the substrate 9 .
- a predetermined pressure either at or above atmospheric pressure, 760 torr, or below atmospheric pressure may enhance the planarization or other photoresist layer characteristic.
- the pressure of process chamber 12 is controlled by controlling the solvent vapor pressure entering opening 22 and exiting exhaust tube 16 a .
- the pressure and concentration of solvent vapor entering opening 22 depends upon vapor delivery system 50 and pressure regulator 53 predetermined settings.
- the exhaust exiting exhaust tube 16 a is controlled by control device 30 .
- control device 30 For convenience, a single control device 30 and tube 33 is described and illustrated in FIG. 1. One of ordinary skill in the art would realize a similar construction could be used in conjunction with exhaust tube 16 b .
- Control device 30 is connected to wire lead 30 a . In an embodiment, wire lead 30 a is coupled to controller 57 .
- Control device 30 in response to a signal on wire lead 30 a , adjusts the amount of exhaust exiting through exhaust tube 16 a and eventually through flexible tube 33 to vacuum 38 .
- the amount of back pressure created by vacuum 38 is likewise controlled by signals on wire lead 38 a .
- control device 30 may be a chamber valve which may be set to a predetermined angle in response to a signal on wire lead 30 a .
- the amount of back pressure in exhaust tube 16 a is controlled by generating the appropriate predetermined signals on wire leads 30 a and 38 a to control device 30 and vacuum 38 , respectively.
- Pressure is increased in process chamber 12 by closing the chamber valve in control device 30 and increasing solvent vapor pressure from a bubbler 50 into process chamber 12 .
- vapor pressure is increased by pressure regulator 53 .
- Pressure is decreased in process chamber 12 by opening the chamber valve in control device 30 and/or increasing back pressure from vacuum 38 .
- Pressure in process chamber 12 may range from approximately 0-1000 torr.
- the predetermined pressure in process chamber 12 results from the initial solvent vapor pressure introduced through opening 22 and the predetermined setting of control device 30 and vacuum 38 .
- the chemical composition from a bubbler 50 also controls the composition of the solvent vapor in process chamber 12 .
- pressure and chemical composition is controllable in process chamber 12 during the coating process step.
- Accessing process chamber 12 for positioning substrate 9 and removing a photoresist coated substrate 9 is accomplished by positioning piston 42 a in air cylinder 42 .
- Air cylinder 42 is coupled to bracket 41 which is attached to base plate 40 .
- This structure allows for robotic removal of substrate 9 .
- Air cylinder 42 is controlled in response to signals on wire lead 42 b .
- wire lead 42 b is coupled to controller 57 .
- a likewise air cylinder and bracket may be positioned on the other side of coater 10 .
- FIG. 2 illustrates a top view of coater 10 having a controllable process chamber according to the present invention.
- opening 23 is used for introducing a photoresist into process chamber 12 and eventually onto substrate 9 .
- a solvent vapor delivery system 50 may be connected to opening 22 for introducing a solvent vapor into cavity 20 and ultimately through openings 26 a - b to process chamber 12 .
- the vapor delivery system 50 and the pressure regulator 53 can create vapor pressure from approximately 530 to 1000 torr.
- FIG. 2 illustrates controller 57 coupled to pressure regulator 53 , nitrogen source 58 and coater 10 by wire leads.
- FIG. 3 illustrates another embodiment of coater 10 according to the present invention.
- FIG. 2 illustrates similar components with like reference numerals as illustrated in FIG. 1.
- FIG. 3 illustrates a coater 10 embodiment used for storing photoresist which was not directly used in forming a photoresist layer on substrate 9 .
- FIG. 3 illustrates an embodiment in which a single recycling container 31 is coupled to exhaust tube 16 a .
- a single recycling container is described and illustrated.
- One of ordinary skill in the art would understand that a similar recycling container could be attached to exhaust tube 16 b .
- Unused photoresist exits process chamber 12 through exhaust tube 16 a and control device 30 and is stored in recycle container 31 .
- Photoresist in container 31 is represented by reference number 31 a.
- a control device 34 is connected to control device 30 and is used to seal recycle container 31 .
- control device 30 seals recycle container 31 .
- wire lead 34 b is coupled to controller 57 .
- Vacuum tube 33 is attached to filter 32 which prevents the photoresist from entering vacuum 38 .
- vacuum 38 is house exhaust.
- control device 34 seals the recycle container 31 creating a pressurized seal over photoresist 31 a .
- the photoresist 31 a then may be subsequently used in further semiconductor wafer processing steps. Typically 97% of the photoresist is wasted in a process step.
- a substantial savings in manufacturing cost may be obtained by using photoresist 31 a in recycling container 31 in subsequent photoresist spin-on steps.
- FIG. 4 illustrates an additional recycling apparatus embodiment according to the present invention.
- Recycling apparatus 70 includes a collection tube 60 coupled to exhaust tube 16 a and 16 b .
- Collection tube 60 contains a plurality of openings for inserting tubes 63 a - e .
- an exhaust port 61 is used to connect vacuum tube 33 and filter 32 as illustrated in FIG. 1.
- An exhaust valve is also coupled to exhaust port 61 and container 67 in order to keep process chamber 12 at a predetermined pressure.
- Baffles 66 are positioned in order to direct excess photoresist from process chamber 12 .
- Baffles 66 channel the excess photoresist into tubes 63 a - e and ultimately into reservoir 62 . Excess unused photoresist is represented by reference numeral 62 a in reservoir 62 . Reservoir 62 may also have a recycling container 67 attached for storing excess photoresist 62 a.
- FIGS. 5 a - b illustrate the process steps in developing a substrate 9 coated with photoresist using coater 10 according to the present invention.
- the process begins with opening the process chamber as illustrated in logic block 90 .
- piston 42 a is positioned downward moving lower section 19 and unsealing process chamber 12 .
- a wafer substrate 9 is then positioned as illustrated by logic block 91 .
- a wafer is positioned on wafer chuck 13 a and secured by back pressure in a vacuum channel or an electrostatic charge.
- the process chamber 12 is then closed and sealed by moving piston 42 a upward, thereby sealing process chamber 12 .
- Process chamber 12 is then evacuated, as illustrated in logic block 93 .
- a chamber valve is set in control device 30 in response to signals on wire lead 30 a as illustrated in logic block 94 .
- the amount of back pressure from vacuum 38 is then controlled by the chamber valve setting and amount of pressure created by vacuum 38 .
- Pressurized solvent vapor is then introduced in logic block 95 .
- a solvent vapor delivery system 50 is attached to opening 22 and pressure regulator 53 is set to the desired pressure.
- a solvent vapor is then created and injected into cavity 20 and ultimately through opening 26 a - b to process chamber 12 .
- the photoresist is then introduced into process chamber 12 through opening 23 as illustrated by logic block 96 .
- the substrate 9 is then spun by rotating wafer chuck 13 with motor 15 in response to signals on wire leads 27 as illustrated in logic block 97 .
- Nitrogen may be introduced into process chamber 12 as illustrated by logic block 98 . Excess photoresist and solvent vapor is then exhausted through exhaust tube 16 a .
- the chamber valve is opened as illustrated in logic block 99 .
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Abstract
A coater having a controllable pressurized process chamber for applying photoresist to a wafer is provided. The controllable pressurized process chamber reduces the evaporation of solvent in the photoresist during a spin-on process step. Reducing premature curing of the photoresist results in improved uniform planarization of the photoresist layer. Contaminants in the photoresist are also reduced by having an environmentally controllable process chamber. A housing having a upper and lower section forms a process chamber surrounding a wafer chuck. The upper housing section includes a solvent vapor opening for introducing pressurized solvent vapor into the process chamber and the lower housing section includes an exhaust opening. The upper housing section also includes an opening for introducing photoresist onto a wafer. A control device is coupled to the exhaust opening and a vacuum device for controlling the pressure in the process chamber. A sealed recycling photoresist container and recycling apparatus is also coupled to the exhaust opening to store unused photoresist. The unused photoresist may be used in subsequent spin-on process steps, thereby reducing processing costs.
Description
- This patent application is a divisional of application Ser. No. 08/651,277 filed May22, 1996, now U.S. Pat. No. 6,248,398.
- The present invention relates to a semiconductor manufacturing process and, in particular, to a coater for dispensing an organic and/or inorganic material on a substrate in a controllable pressurized process chamber.
- In manufacturing a semiconductor device, a substrate, such as a wafer, is typically coated with an inorganic and/or organic material in a process step. Often, a wafer is coated with a photoresist. The wafer is first positioned in a coater, or specifically on a wafer chuck. A motor spins the wafer chuck and wafer while the photoresist is dispensed onto the center of the wafer. The spinning imparts an angular torque onto the photoresist, which forces the photoresist out in a radial direction, ultimately covering the wafer. This semiconductor manufacturing process step is generally known as “the spin-on photoresist step”. The photoresist coated wafer then may be removed from the coater and baked to form a photoresist layer on the wafer.
- During the spin-on photoresist step, a solvent vapor is typically introduced into an area near the surface of the wafer in order to control the coating of the photoresist. As the photoresist moves radially from the center of the wafer, the photoresist tends to cure prematurely due to the evaporation of solvent in the photoresist. As the curing photoresist moves radially from the center of the wafer, a non-uniform surface is created. By introducing solvent vapor near the wafer during the spin-on step, this premature curing of the photoresist may be reduced. A flat plate may be positioned above the wafer forming a very small gap to trap the solvent fumes from the photoresist during the spin-on step in order to minimize the rate at which the photoresist cures. However, the introduction of solvent vapors and a plate does not adequately solve the premature curing of photoresist and the resulting non-uniformly coated wafer surface.
- Generally, the photoresist is deposited upon a preexisting varied wafer topology. The wafer may have undergone previous manufacturing process steps creating the varied wafer topology. A uniform planar photoresist region on a semiconductor device is important to offset the effects of varied wafer topology. Typically, semiconductor manufacturing process steps require a uniform planar region in order to have a uniform process. A uniform planarized photoresist surface or layer will reduce semiconductor device manufacturing defects and improve semiconductor reliability and cost.
- The uniform planarization of a photoresist layer depends on many factors. One of these factors includes the pressure surrounding the formation of the photoresist layer on the wafer. The pressure surrounding the wafer substrate surface during the photoresist spin-on step affects the evaporation rate of the solvent in the photoresist and eventually the surface uniformity of the photoresist layer.
- Another factor affecting photoresist planarization includes the chemical composition of the environment during the photoresist spin-on step. Ideally, a solvent vapor-rich and contaminant-free environment is desirable in the photoresist spin-on step. As discussed above, a solvent vapor-rich environment will reduce solvent evaporation from the photoresist. Also, contaminants from the surrounding air entering the coater should be eliminated. Chemical contaminants, such as n-butyl acetate fumes, from processes elsewhere in the manufacturing of a semiconductor reduce the adhesion of the photoresist to the wafer substrate and should be eliminated. Likewise, solid particles generated by operators or process equipment adjacent to the coater should not be allowed to enter the photoresist spin-on process step.
- Coaters typically waste a large amount of photoresist during the photoresist spin-on step. As much as 97% of the photoresist may be spun off the surface of the wafer and eventually not directly used in forming the photoresist layer. The wasted photoresist may add significant costs to the production of a wafer containing semiconductor devices. In order to coat a wafer with photoresist, approximately $20 may be expended on only the photoresist. These costs are expected to rise as semiconductor device geometries are reduced in order to obtain faster operating speeds. Furthermore, there are added costs in properly disposing of the photoresist waste which may be considered hazardous waste.
- Thus, it is desirable to provide a coater for dispensing organic and/or inorganic material, such as photoresist, onto a wafer substrate surface in a controlled environment. The controlled environment would enable forming uniformly planarized photoresist layers in a contaminant reduced environment, thereby reducing semiconductor manufacturing costs and defects while enhancing semiconductor reliability and performance. Further, it is desirable to have a coater which minimizes photoresist waste, thereby reducing costs in manufacturing semiconductor devices.
- In accordance with the present invention, a photoresist coater having a controllable process chamber is provided. The controllable process chamber enables the formation of a uniform planarized photoresist layer on a wafer in a predetermined pressure and chemical environment. The coater also includes a recycling apparatus for storing excess photoresist.
- The photoresist coater includes a wafer chuck having a wafer chuck surface for positioning a wafer substrate to be coated with the photoresist. A spin motor is coupled to the wafer chuck and rotates the wafer chuck. A lower housing section having a first exhaust opening is coupled to the wafer chuck and an upper housing section is coupled to the lower housing section forming a process chamber surrounding the wafer chuck surface. A vacuum device is coupled to the lower housing section and creates back pressure in the process chamber through the first exhaust opening. A control device coupled to the lower housing controls the pressure in the process chamber.
- According to another aspect of the present invention, the photoresist coater includes an upper housing section having a material dispensing opening and a lower housing section having an exhaust opening. The lower housing section is positionable to access the process chamber. The upper housing section also includes a cavity for containing solvent vapor and a plurality of cavity openings for introducing solvent vapor into the process chamber.
- According to another aspect of the present invention, the lower housing section includes an opening for introducing nitrogen into the process chamber.
- According to still another aspect of the present invention, the photoresist coater includes a photoresist recycling apparatus coupled to an exhaust tube for storing unused photoresist from the process chamber. The photoresist recycling apparatus includes a photoresist container coupled to a control device for sealing the photoresist container.
- According to another aspect of the present invention, the photoresist recycling apparatus includes a collection tube having a baffle coupled to the exhaust tube. The collection tube is further coupled to a vacuum. Also, the collection tube is coupled to a reservoir for holding unused photoresist.
- According to another aspect of the present invention, a process for forming a photoresist layer on a wafer substrate in a pressurized controllable process chamber is provided. The process comprises the steps of opening the process chamber and positioning the wafer substrate on a wafer chuck in the process chamber. The process chamber is then closed. The process chamber is then evacuated and the chamber value is set to a predetermined setting. The process chamber is pressurized with a solvent vapor. The photoresist is applied and the wafer chuck is spun, while nitrogen may be introduced. The chamber value is then opened.
- FIG. 1 illustrates a side cross sectional view of a coater having a controllable pressurized process chamber according to the present invention.
- FIG. 2 illustrates a top view of a coater having a controllable pressurized process chamber according to the present invention.
- FIG. 3 illustrates a coater having a controllable pressurized process chamber and a photoresist recycling container according to the present invention.
- FIG. 4 illustrates a coater having a controllable pressurized process chamber and photoresist recycling apparatus according to the present invention.
- FIGS. 5a-b illustrate a logic flow chart for processing a wafer in a coater having a controllable pressurized process chamber according to the present invention.
- FIG. 1 illustrates a side cross sectional view of a
coater 10 having a controllablepressurized process chamber 12 accordingly to the present invention.Process chamber 12 is formed by a housing having anupper section 11 and alower section 19.Upper section 11 is attached to lowerhousing section 19 by representative O-ring seals 25. The sealedprocess chamber 12 allows for a controlled environment in applying a photoresist to asubstrate 9, such as a wafer, or more specifically, a silicon wafer. Other materials may be likewise dispensed uponsubstrate 9, such as viscous polymers, spin-on-glass and anti-reflection coating materials. Contaminants introduced into the photoresist are reduced and photoresist planarization is enhanced by controlling the environment inprocess chamber 12. Two housing sections are used to formprocess chamber 12 rather than a single housing construction. The double housing section design allows for a user to access theprocess chamber 12. The manufacturability ofcoater 10 is also enhanced by formingprocess chamber 12 from two housing sections rather than constructing a single housing. -
Wafer chuck 13 having wafer chuck surface 13 a is positioned inprocess chamber 12. Wafer chuck surface 13 a is used for positioning the wafer and is coupled to spinmotor 15. In the preferred embodiment, avacuum wafer chuck 13 is used. A vacuum channel internal towafer chuck 13 andmotor 15 is used to secure thesubstrate 9 on the wafer chuck surface 13 a. A wafer chuck vacuum may be coupled tomotor 15 and create negative pressure in the vacuum channel, thus securing thesubstrate 9 to wafer chuck surface 13 a. In other embodiments, an electrostatic wafer chuck using electrostatic attraction forces may be used in securing thesubstrate 9. In particular, at very low pressures inprocess chamber 12, for example at or near 0 torr, an electrostatic wafer chuck, as known by one of ordinary skill in the art, may be required. -
Motor 15 is coupled to mountbracket 14, which is supported byposts posts base plate 40.Spin motor 15 is controlled by signals on wire leads 27.Spin motor 15 may operate from 0-10,000 revolutions per minute (“rpm”).Spin motor 15, in response to signals on wire leads 27, spinswafer chuck 13 andsubstrate 9 during the spin-on process step. The rpm setting will depend upon a variety of process step parameters, such as desiredchamber 12 pressure and photoresist type.Spin motor 15, as well asair cylinder 42,control device 30,control device 34,pressure regulator 53,nitrogen source 58 andvacuum 38 are controlled bycontroller 57, as illustrated in FIG. 2.Controller 57 generates the appropriate electrical signals at predetermined times on the various wire leads to control the spin-on-process step. -
Upper housing section 11 includesopenings Opening 23 is used for introducing an organic and/or inorganic material, or in particular a photoresist, into theprocess chamber 12. Typically, the photoresist is dispensed onto the center ofsubstrate 9 asspin motor 15spins wafer chuck 13 and thesubstrate 9. Likewise, opening 22 is used for introducing a solvent vapor intoprocess chamber 12 throughcavity 20 inupper housing section 11. In an embodiment, opening 22 may be coupled to avapor delivery system 50, as understood by one of ordinary skill in the art, for generating solvent vapor at a specified pressure. As seen in FIG. 2,vapor delivery system 50 is coupled to opening 22 by way ofpressure regulator 53 andhoses vapor delivery system 50 is coupled topressure regulator 53 byhose 51. In an embodiment,vapor delivery system 50 may be a vaporizer.Pressure regulator 53 then controls the pressure of solvent vapor introduced intoopening 22 throughhose 52. Openings 26 a-b act as a shower head in introducing solvent vapor intoprocess chamber 12 fromcavity 20. The uniform spacing of openings 26 a-b andcavity 20 enable a uniform introduction of solvent vapor intoprocess chamber 12. In an embodiment,cavity 20 is formed in the shape of a flat, thin ring, as illustrated in FIGS. 1 and 2. The solvent vapor and excess photoresist exits through exhaust mount 17 a-b and exhaust tubes 16 a-b. -
Opening 24 inlower housing section 19 is used for introducing nitrogen intoprocess chamber 12. In an embodiment, opening 24 is a circular opening formed between the baffle oflower housing section 19 and the bottom ofsubstrate 9. Nitrogen is introduced throughopenings 24 to eliminate back side contamination or photoresist build-up on the outer edge ofsubstrate 9.Nitrogen source 58 andnitrogen control valve 70, along withhose 59, introduce nitrogen intoopenings 24, as illustrated in FIG. 2.Openings 24 in conjunction with the formation oflower housing section 19 allow for nitrogen to be directed toward the edge of asubstrate 9 and thereby reducing the buildup of photoresist at the outer edge ofsubstrate 9. The formation oflower housing section 19 creates a laminar air flow at the outer edge ofsubstrate 9 to eliminate bottom Edge-Bead-Removal (“EBR”). - The pressure of
process chamber 12 is controlled in order to enhance the uniform formation of a photoresist layer onsubstrate 9. By controlling the pressure and chemical concentration surrounding the formation of a photoresist layer onsubstrate 9, the evaporation of solvent in the photoresist or cure rate may be controlled. If the area surrounding the wafer is saturated with solvent vapor, solvent evaporation is reduced or eliminated. This in turn controls the uniformity or planarization of photoresist on thesubstrate 9. A predetermined pressure either at or above atmospheric pressure, 760 torr, or below atmospheric pressure may enhance the planarization or other photoresist layer characteristic. - The pressure of
process chamber 12 is controlled by controlling the solvent vaporpressure entering opening 22 and exitingexhaust tube 16 a. The pressure and concentration of solventvapor entering opening 22 depends uponvapor delivery system 50 andpressure regulator 53 predetermined settings. The exhaust exitingexhaust tube 16 a is controlled bycontrol device 30. For convenience, asingle control device 30 andtube 33 is described and illustrated in FIG. 1. One of ordinary skill in the art would realize a similar construction could be used in conjunction withexhaust tube 16 b.Control device 30 is connected to wire lead 30 a. In an embodiment, wire lead 30 a is coupled tocontroller 57.Control device 30, in response to a signal onwire lead 30 a, adjusts the amount of exhaust exiting throughexhaust tube 16 a and eventually throughflexible tube 33 to vacuum 38. The amount of back pressure created byvacuum 38 is likewise controlled by signals onwire lead 38 a. In an embodiment,control device 30 may be a chamber valve which may be set to a predetermined angle in response to a signal onwire lead 30 a. Thus, the amount of back pressure inexhaust tube 16 a, is controlled by generating the appropriate predetermined signals on wire leads 30 a and 38 a to controldevice 30 andvacuum 38, respectively. Pressure is increased inprocess chamber 12 by closing the chamber valve incontrol device 30 and increasing solvent vapor pressure from abubbler 50 intoprocess chamber 12. Specifically, vapor pressure is increased bypressure regulator 53. Pressure is decreased inprocess chamber 12 by opening the chamber valve incontrol device 30 and/or increasing back pressure fromvacuum 38. Pressure inprocess chamber 12 may range from approximately 0-1000 torr. Thus, the predetermined pressure inprocess chamber 12, results from the initial solvent vapor pressure introduced throughopening 22 and the predetermined setting ofcontrol device 30 andvacuum 38. The chemical composition from abubbler 50 also controls the composition of the solvent vapor inprocess chamber 12. Thus, pressure and chemical composition is controllable inprocess chamber 12 during the coating process step. - Accessing
process chamber 12 forpositioning substrate 9 and removing a photoresist coatedsubstrate 9 is accomplished by positioningpiston 42 a inair cylinder 42.Air cylinder 42 is coupled tobracket 41 which is attached tobase plate 40. Aspiston 42 a is positioned in an upward or downward position,lower housing section 19 is likewise positioned allowing access to processchamber 12. This structure allows for robotic removal ofsubstrate 9.Air cylinder 42 is controlled in response to signals onwire lead 42 b. In an embodiment,wire lead 42 b is coupled tocontroller 57. A likewise air cylinder and bracket may be positioned on the other side ofcoater 10. - FIG. 2 illustrates a top view of
coater 10 having a controllable process chamber according to the present invention. As in FIG. 1, opening 23 is used for introducing a photoresist intoprocess chamber 12 and eventually ontosubstrate 9. A solventvapor delivery system 50 may be connected to opening 22 for introducing a solvent vapor intocavity 20 and ultimately through openings 26 a-b to processchamber 12. Typically, thevapor delivery system 50 and thepressure regulator 53 can create vapor pressure from approximately 530 to 1000 torr. FIG. 2 illustratescontroller 57 coupled topressure regulator 53,nitrogen source 58 andcoater 10 by wire leads. - FIG. 3 illustrates another embodiment of
coater 10 according to the present invention. FIG. 2 illustrates similar components with like reference numerals as illustrated in FIG. 1. In addition, FIG. 3 illustrates acoater 10 embodiment used for storing photoresist which was not directly used in forming a photoresist layer onsubstrate 9. FIG. 3 illustrates an embodiment in which asingle recycling container 31 is coupled toexhaust tube 16 a. For convenience, a single recycling container is described and illustrated. One of ordinary skill in the art would understand that a similar recycling container could be attached toexhaust tube 16 b. Unused photoresistexits process chamber 12 throughexhaust tube 16 a andcontrol device 30 and is stored inrecycle container 31. Photoresist incontainer 31 is represented by reference number 31 a. Acontrol device 34 is connected to controldevice 30 and is used to sealrecycle container 31. In response to signals onwire lead 34 b,control device 30 seals recyclecontainer 31. In an embodiment,wire lead 34 b is coupled tocontroller 57.Vacuum tube 33 is attached to filter 32 which prevents the photoresist from enteringvacuum 38. In an embodiment,vacuum 38 is house exhaust. Thus, when excess photoresist fromprocess chamber 12exits process chamber 12 and is stored inrecycling bottle 31,control device 34 seals therecycle container 31 creating a pressurized seal over photoresist 31 a. The photoresist 31 a then may be subsequently used in further semiconductor wafer processing steps. Typically 97% of the photoresist is wasted in a process step. Thus, a substantial savings in manufacturing cost may be obtained by using photoresist 31 a inrecycling container 31 in subsequent photoresist spin-on steps. - FIG. 4 illustrates an additional recycling apparatus embodiment according to the present invention. As in FIG. 1, like reference numerals represent like structure. Only a portion of
coater 10 is illustrated in FIG. 4 in order to clearly show therecycling apparatus 70.Recycling apparatus 70 includes acollection tube 60 coupled toexhaust tube Collection tube 60 contains a plurality of openings for inserting tubes 63 a-e. In addition, anexhaust port 61 is used to connectvacuum tube 33 andfilter 32 as illustrated in FIG. 1. An exhaust valve is also coupled toexhaust port 61 andcontainer 67 in order to keepprocess chamber 12 at a predetermined pressure. Baffles 66 are positioned in order to direct excess photoresist fromprocess chamber 12. Baffles 66 channel the excess photoresist into tubes 63 a-e and ultimately intoreservoir 62. Excess unused photoresist is represented byreference numeral 62 a inreservoir 62.Reservoir 62 may also have arecycling container 67 attached for storingexcess photoresist 62 a. - FIGS. 5a-b illustrate the process steps in developing a
substrate 9 coated withphotoresist using coater 10 according to the present invention. The process begins with opening the process chamber as illustrated inlogic block 90. In particular,piston 42 a is positioned downward movinglower section 19 and unsealingprocess chamber 12. Awafer substrate 9 is then positioned as illustrated bylogic block 91. A wafer is positioned onwafer chuck 13 a and secured by back pressure in a vacuum channel or an electrostatic charge. Inlogic block 92, theprocess chamber 12 is then closed and sealed by movingpiston 42 a upward, thereby sealingprocess chamber 12.Process chamber 12 is then evacuated, as illustrated inlogic block 93. A chamber valve is set incontrol device 30 in response to signals onwire lead 30 a as illustrated inlogic block 94. The amount of back pressure fromvacuum 38 is then controlled by the chamber valve setting and amount of pressure created byvacuum 38. Pressurized solvent vapor is then introduced inlogic block 95. Specifically, a solventvapor delivery system 50 is attached to opening 22 andpressure regulator 53 is set to the desired pressure. A solvent vapor is then created and injected intocavity 20 and ultimately through opening 26 a-b to processchamber 12. The photoresist is then introduced intoprocess chamber 12 throughopening 23 as illustrated bylogic block 96. Thesubstrate 9 is then spun by rotatingwafer chuck 13 withmotor 15 in response to signals on wire leads 27 as illustrated inlogic block 97. Nitrogen may be introduced intoprocess chamber 12 as illustrated bylogic block 98. Excess photoresist and solvent vapor is then exhausted throughexhaust tube 16 a. Finally, the chamber valve is opened as illustrated inlogic block 99. - The foregoing description of the preferred embodiments of the present invention has been provided for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations will be apparent to practitioners skilled in the art. For example, it should be understood, that one of ordinary skill in the art could use a variety of process steps in creating a photoresist layer on a wafer using a coater. The above process steps have been provided for illustration and could be modified according to the particular application intended. The embodiments were chosen and described in order to best explain the principles of the invention and its practical applications, thereby enabling others skilled in the art to understand the invention for various embodiments and with the various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the following claims and their equivalents.
Claims (32)
1. A coater for dispensing material on a wafer substrate, comprising:
(a) a wafer chuck having a wafer chuck surface for positioning the wafer substrate;
(b) a spin motor, coupled to the wafer chuck, for rotating the wafer chuck;
(c) a housing enclosing the wafer chuck surface and forming a process chamber; and,
(d) a control device, coupled to the housing, for controlling the pressure in the process chamber.
2. The coater of , wherein the housing includes an upper section having a material dispensing opening and a lower section having an exhaust opening.
claim 1
3. The coater of , wherein the lower section is positionable to access the process chamber.
claim 2
4. The coater of , wherein an exhaust tube is coupled to exhaust opening and the control device.
claim 2
5. The coater of , wherein the control device includes a chamber valve.
claim 1
6. The coater of , wherein the housing upper section includes a cavity for containing solvent vapor and a plurality of cavity openings for introducing solvent vapor into the process chamber.
claim 2
7. The coater of , wherein the housing lower section includes an opening for introducing nitrogen into the process chamber.
claim 2
8. The coater of , further comprising a recycling container, coupled to the control device, for holding unused material from the process chamber.
claim 1
9. The coater of , wherein the material is photoresist.
claim 1
10. The coater of , wherein the material is viscous material.
claim 1
11. The coater of , wherein the material is spin-on-glass.
claim 1
12. The coater of , wherein the material is anti-reflection coating.
claim 1
13. The coater of , wherein the coater further includes a pressure regulator, coupled to the upper housing, for providing pressurized solvent vapor.
claim 1
14. A photoresist coater having a controllable pressurized process chamber, comprising:
(a) a wafer chuck having a wafer chuck surface for positioning a wafer to be coated with the photoresist;
(b) a spin motor, coupled to the wafer chuck, for rotating the wafer chuck;
(c) a lower housing section, coupled to the wafer chuck, having an exhaust opening;
(d) an upper housing section, coupled to the lower housing section, forming a process chamber surrounding the wafer chuck surface;
(e) a vacuum, coupled to the lower housing section, for providing a pressure in response to a vacuum control signal;
(f) a control device, coupled to the lower housing section and vacuum device, for controlling the pressure responsive to a control device signal; and,
(g) a pressure regulator, coupled to the upper housing, for providing solvent vapor pressure in the process chamber.
15. The photoresist coater of , wherein the control device includes a chamber valve.
claim 14
16. The photoresist coater of , wherein the upper housing section includes a solvent vapor opening and a vaporizer is coupled to the solvent vapor opening for providing a controllable solvent vapor in the process chamber.
claim 14
17. The photoresist coater of , wherein the lower housing is positionable in order to access the process chamber.
claim 14
18. The photoresist coater of , wherein the housing upper section includes a cavity for containing solvent vapor and a plurality of cavity openings for introducing solvent vapor into the process chamber.
claim 14
19. The photoresist coater of , wherein the housing lower section includes a nitrogen opening for introducing nitrogen into the process chamber.
claim 14
20. The photoresist coater of , further comprising a photoresist recycling container, coupled to the control device, for holding unused photoresist from the process chamber.
claim 14
21. The photoresist coater of , wherein the photoresist recycling container is coupled to a filter.
claim 20
22. A photoresist coater having a controllable pressurized process chamber for spinning photoresist onto a wafer substrate surface, comprising:
(a) a wafer chuck having a wafer chuck surface for positioning the wafer substrate;
(b) a spin motor, coupled to the wafer chuck, for rotating the wafer chuck;
(c) a housing, coupled to the wafer chuck, forming a process chamber;
(d) an exhaust tube, coupled to the housing, for exhausting the process chamber;
(e) a photoresist recycling apparatus, coupled to the exhaust tube, for storing unused photoresist from the process chamber.
23. The photoresist coater of , wherein the photoresist recycling apparatus includes a photoresist container.
claim 22
24. The photoresist coater of , wherein the photoresist container is coupled to a control device for sealing the photoresist container.
claim 23
25. The photoresist coater of , wherein a vacuum device is coupled to the photoresist container.
claim 23
26. The photoresist coater of , wherein the photoresist recycling apparatus includes a collection tube having a baffle coupled to the exhaust tube.
claim 22
27. The photoresist recycling apparatus of , wherein the collection tube includes a vacuum port for coupling a vacuum.
claim 26
28. The photoresist recycling apparatus of , wherein the collection tube is further coupled to a reservoir for holding unused photoresist.
claim 27
29. A process for forming a photoresist layer on a wafer substrate surface in a coater having a controllable pressurized process chamber, comprising the steps of:
(a) opening the process chamber;
(b) positioning the wafer substrate on a wafer chuck in the process chamber;
(c) closing the process chamber;
(d) evacuating the process chamber;
(e) introducing a pressurized solvent vapor into the process chamber;
(f) applying the photoresist to the wafer substrate; and,
(g) spinning the wafer chuck.
30. The process of , further comprising the step of:
claim 29
storing excess photoresist.
31. The process of , further comprising the step of:
claim 29
storing pressurized excess photoresist.
32. The process step of , further comprising the steps of:
claim 29
introducing nitrogen into the process chamber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US09/885,230 US20010035125A1 (en) | 1996-05-22 | 2001-06-19 | Coater having controllable pressurized process chamber for semiconductor processing |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/651,277 US6248398B1 (en) | 1996-05-22 | 1996-05-22 | Coater having a controllable pressurized process chamber for semiconductor processing |
US09/885,230 US20010035125A1 (en) | 1996-05-22 | 2001-06-19 | Coater having controllable pressurized process chamber for semiconductor processing |
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Application Number | Title | Priority Date | Filing Date |
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US08/651,277 Division US6248398B1 (en) | 1996-05-22 | 1996-05-22 | Coater having a controllable pressurized process chamber for semiconductor processing |
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Publication Number | Publication Date |
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US20010035125A1 true US20010035125A1 (en) | 2001-11-01 |
Family
ID=24612238
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US08/651,277 Expired - Fee Related US6248398B1 (en) | 1996-05-22 | 1996-05-22 | Coater having a controllable pressurized process chamber for semiconductor processing |
US09/885,230 Abandoned US20010035125A1 (en) | 1996-05-22 | 2001-06-19 | Coater having controllable pressurized process chamber for semiconductor processing |
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US08/651,277 Expired - Fee Related US6248398B1 (en) | 1996-05-22 | 1996-05-22 | Coater having a controllable pressurized process chamber for semiconductor processing |
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US (2) | US6248398B1 (en) |
EP (1) | EP0810478A3 (en) |
JP (1) | JPH1070071A (en) |
KR (1) | KR970077117A (en) |
TW (1) | TW326550B (en) |
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Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6027760A (en) * | 1997-12-08 | 2000-02-22 | Gurer; Emir | Photoresist coating process control with solvent vapor sensor |
KR19990070781A (en) * | 1998-02-24 | 1999-09-15 | 윤종용 | Spin coating method and apparatus |
US6302960B1 (en) | 1998-11-23 | 2001-10-16 | Applied Materials, Inc. | Photoresist coater |
US6451114B1 (en) * | 1999-04-22 | 2002-09-17 | Quality Microcircuits Corporation | Apparatus for application of chemical process to a workpiece |
TW499504B (en) * | 1999-09-09 | 2002-08-21 | Yu-Tsai Liu | Single chamber processing apparatus having multi-chamber functions |
US6676757B2 (en) * | 1999-12-17 | 2004-01-13 | Tokyo Electron Limited | Coating film forming apparatus and coating unit |
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US6743462B1 (en) * | 2001-05-31 | 2004-06-01 | Advanced Cardiovascular Systems, Inc. | Apparatus and method for coating implantable devices |
US6695920B1 (en) | 2001-06-27 | 2004-02-24 | Advanced Cardiovascular Systems, Inc. | Mandrel for supporting a stent and a method of using the mandrel to coat a stent |
KR100517547B1 (en) * | 2001-06-27 | 2005-09-28 | 삼성전자주식회사 | Method of forming photo resist using the apparatus |
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US6678082B2 (en) * | 2001-09-12 | 2004-01-13 | Harris Corporation | Electro-optical component including a fluorinated poly(phenylene ether ketone) protective coating and related methods |
US6843852B2 (en) * | 2002-01-16 | 2005-01-18 | Intel Corporation | Apparatus and method for electroless spray deposition |
US6913651B2 (en) * | 2002-03-22 | 2005-07-05 | Blue29, Llc | Apparatus and method for electroless deposition of materials on semiconductor substrates |
TW535991U (en) * | 2002-05-24 | 2003-06-01 | Winbond Electronics Corp | Barrier device |
US20030234929A1 (en) * | 2002-06-24 | 2003-12-25 | Applied Materials, Inc. | Method and system to reduce/detect a presence of gas in a flow of a cleaning fluid |
US6716285B1 (en) | 2002-10-23 | 2004-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Spin coating of substrate with chemical |
US7074276B1 (en) | 2002-12-12 | 2006-07-11 | Advanced Cardiovascular Systems, Inc. | Clamp mandrel fixture and a method of using the same to minimize coating defects |
JP2004306191A (en) * | 2003-04-07 | 2004-11-04 | Seiko Epson Corp | Table device, film deposition device, optical element, semiconductor device and electronic equipment |
US7326437B2 (en) * | 2003-12-29 | 2008-02-05 | Asml Holding N.V. | Method and system for coating polymer solution on a substrate in a solvent saturated chamber |
US20060105356A1 (en) * | 2004-11-18 | 2006-05-18 | Dutton Duane M | Methods for reducing evaporation in wet processing steps |
US8328942B2 (en) * | 2004-12-17 | 2012-12-11 | Lam Research Corporation | Wafer heating and temperature control by backside fluid injection |
US7651306B2 (en) | 2004-12-22 | 2010-01-26 | Applied Materials, Inc. | Cartesian robot cluster tool architecture |
US7699021B2 (en) | 2004-12-22 | 2010-04-20 | Sokudo Co., Ltd. | Cluster tool substrate throughput optimization |
US7819079B2 (en) | 2004-12-22 | 2010-10-26 | Applied Materials, Inc. | Cartesian cluster tool configuration for lithography type processes |
US7798764B2 (en) | 2005-12-22 | 2010-09-21 | Applied Materials, Inc. | Substrate processing sequence in a cartesian robot cluster tool |
US7255747B2 (en) | 2004-12-22 | 2007-08-14 | Sokudo Co., Ltd. | Coat/develop module with independent stations |
US7823533B2 (en) | 2005-06-30 | 2010-11-02 | Advanced Cardiovascular Systems, Inc. | Stent fixture and method for reducing coating defects |
JP4923450B2 (en) * | 2005-07-01 | 2012-04-25 | 富士ゼロックス株式会社 | Batch processing support apparatus and method, program |
US20070012558A1 (en) * | 2005-07-13 | 2007-01-18 | Applied Materials, Inc. | Magnetron sputtering system for large-area substrates |
US20070012559A1 (en) * | 2005-07-13 | 2007-01-18 | Applied Materials, Inc. | Method of improving magnetron sputtering of large-area substrates using a removable anode |
US20070084720A1 (en) * | 2005-07-13 | 2007-04-19 | Akihiro Hosokawa | Magnetron sputtering system for large-area substrates having removable anodes |
US20070012663A1 (en) * | 2005-07-13 | 2007-01-18 | Akihiro Hosokawa | Magnetron sputtering system for large-area substrates having removable anodes |
US7735449B1 (en) | 2005-07-28 | 2010-06-15 | Advanced Cardiovascular Systems, Inc. | Stent fixture having rounded support structures and method for use thereof |
US20070051616A1 (en) * | 2005-09-07 | 2007-03-08 | Le Hienminh H | Multizone magnetron assembly |
US20070056843A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones |
US20070056850A1 (en) * | 2005-09-13 | 2007-03-15 | Applied Materials, Inc. | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
US7588668B2 (en) | 2005-09-13 | 2009-09-15 | Applied Materials, Inc. | Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers |
US7867547B2 (en) | 2005-12-19 | 2011-01-11 | Advanced Cardiovascular Systems, Inc. | Selectively coating luminal surfaces of stents |
US8069814B2 (en) | 2006-05-04 | 2011-12-06 | Advanced Cardiovascular Systems, Inc. | Stent support devices |
US7985441B1 (en) | 2006-05-04 | 2011-07-26 | Yiwen Tang | Purification of polymers for coating applications |
US10090175B2 (en) * | 2012-06-22 | 2018-10-02 | Scientific Value Solutions Co. Ltd | Apparatus for manufacturing semiconductor wafer |
KR102223824B1 (en) * | 2013-03-14 | 2021-03-04 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and methods for wafer chucking on a susceptor for ald |
US8991329B1 (en) * | 2014-01-31 | 2015-03-31 | Applied Materials, Inc. | Wafer coating |
DE102014113928B4 (en) | 2014-09-25 | 2023-10-05 | Suss Microtec Lithography Gmbh | Method for coating a substrate with a lacquer and device for planarizing a lacquer layer |
KR102438139B1 (en) * | 2014-12-22 | 2022-08-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Process kit for a high throughput processing chamber |
WO2016201614A1 (en) | 2015-06-16 | 2016-12-22 | Jf Polymers (Suzhou) Co., Ltd. | Methods and apparatuses for processing additive manufactured objects |
CN107983602B (en) * | 2017-12-04 | 2021-04-30 | 安徽家思特涂料有限责任公司 | Automatic transfer and shaping integrated process for coating surface of plate |
DE102019127375A1 (en) * | 2019-10-10 | 2021-04-15 | Aixtron Se | Gas outlet element of a CVD reactor |
US11236424B2 (en) * | 2019-11-01 | 2022-02-01 | Applied Materials, Inc. | Process kit for improving edge film thickness uniformity on a substrate |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57166033A (en) | 1981-04-06 | 1982-10-13 | Toshiba Corp | Applying device for resist with adjusting mechanism for quantity of exhaust gas |
JPS62221464A (en) | 1986-03-19 | 1987-09-29 | Mitsubishi Electric Corp | Vacuum suction stand for rotary coating |
FR2597372B3 (en) | 1986-04-22 | 1988-07-08 | Thomson Csf | CENTRIFUGATION RESIN SPREADING METHOD AND APPARATUS |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US5254367A (en) | 1989-07-06 | 1993-10-19 | Tokyo Electron Limited | Coating method and apparatus |
US5108792A (en) | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
JPH0435768A (en) | 1990-05-29 | 1992-02-06 | Fujitsu Ltd | Spin-coating method |
JPH0734890B2 (en) | 1991-10-29 | 1995-04-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Spin coating method |
JPH06295862A (en) * | 1992-11-20 | 1994-10-21 | Mitsubishi Electric Corp | Compound semiconductor fabrication system and organic metal material vessel |
US5387067A (en) | 1993-01-14 | 1995-02-07 | Applied Materials, Inc. | Direct load/unload semiconductor wafer cassette apparatus and transfer system |
JP2662365B2 (en) * | 1993-01-28 | 1997-10-08 | アプライド マテリアルズ インコーポレイテッド | Single-substrate vacuum processing apparatus with improved discharge system |
US5380414A (en) | 1993-06-11 | 1995-01-10 | Applied Materials, Inc. | Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor |
US5362372A (en) | 1993-06-11 | 1994-11-08 | Applied Materials, Inc. | Self cleaning collimator |
US5371046A (en) | 1993-07-22 | 1994-12-06 | Taiwan Semiconductor Manufacturing Company | Method to solve sog non-uniformity in the VLSI process |
US5486975A (en) | 1994-01-31 | 1996-01-23 | Applied Materials, Inc. | Corrosion resistant electrostatic chuck |
KR100370728B1 (en) | 1994-10-27 | 2003-04-07 | 실리콘 밸리 그룹, 인크. | Method of uniformly coating a substrate and device therefor |
-
1996
- 1996-05-22 US US08/651,277 patent/US6248398B1/en not_active Expired - Fee Related
-
1997
- 1997-04-16 TW TW086104913A patent/TW326550B/en active
- 1997-05-20 JP JP9129753A patent/JPH1070071A/en not_active Withdrawn
- 1997-05-21 KR KR1019970019660A patent/KR970077117A/en not_active Application Discontinuation
- 1997-05-22 EP EP97303507A patent/EP0810478A3/en not_active Withdrawn
-
2001
- 2001-06-19 US US09/885,230 patent/US20010035125A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
TW326550B (en) | 1998-02-11 |
JPH1070071A (en) | 1998-03-10 |
EP0810478A2 (en) | 1997-12-03 |
US6248398B1 (en) | 2001-06-19 |
EP0810478A3 (en) | 1998-04-15 |
KR970077117A (en) | 1997-12-12 |
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Legal Events
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