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Semiconductor device and method for manufacturing the same

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Publication number
US20010010406A1
US20010010406A1 US09811795 US81179501A US2001010406A1 US 20010010406 A1 US20010010406 A1 US 20010010406A1 US 09811795 US09811795 US 09811795 US 81179501 A US81179501 A US 81179501A US 2001010406 A1 US2001010406 A1 US 2001010406A1
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Prior art keywords
surface
circuit
semiconductor
bonding
conductive
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US09811795
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US6420210B2 (en )
Inventor
Ming-Tung Shen
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Computech International Ventures Ltd
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Ming-Tung Shen
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/303Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
    • H05K3/305Affixing by adhesive
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10674Flip chip
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0191Using tape or non-metallic foil in a process, e.g. during filling of a hole with conductive paste
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/60Greenhouse gas [GHG] capture, heat recovery or other energy efficient measures relating to production or assembly of electric or electronic components or products, e.g. motor control
    • Y02P70/613Greenhouse gas [GHG] capture, heat recovery or other energy efficient measures relating to production or assembly of electric or electronic components or products, e.g. motor control involving the assembly of several electronic elements

Abstract

A semiconductor device includes a semiconductor chip, a dielectric tape layer and a printed circuit board. The semiconductor chip has a pad mounting surface with a plurality of bonding pads provided thereon. The dielectric tape layer has opposite first and second adhesive surfaces. The first adhesive surface is adhered onto the pad mounting surface of the semiconductor chip. The dielectric tape layer is formed with a plurality of holes at positions registered with the bonding pads to expose the bonding pads. Each of the holes is confined by a wall that cooperates with a registered one of the bonding pads to form a contact receiving space. A plurality of conductive contacts are placed in the contact receiving spaces, respectively. The printed circuit board has a circuit layout surface adhered onto the second adhesive surface of the dielectric tape layer. The circuit layout surface is formed with circuit traces that are bonded to the conductive contacts to establish electrical connection with the bonding pads. A method for manufacturing the semiconductor device is also disclosed.

Description

    BACKGROUND OF THE INVENTION
  • [0001]
    1. Field of the Invention
  • [0002]
    The invention relates to a semiconductor device and method for manufacturing the same, more particularly to a semiconductor device that can be produced at a relatively low manufacturing cost and with a relatively high production yield.
  • [0003]
    2. Description of the Related Art
  • [0004]
    Referring to FIGS. 1 and 2, a conventional semiconductor device 1 is shown to comprise a semiconductor chip 10, a dielectric tape layer 2 and a printed circuit board 3.
  • [0005]
    The semiconductor chip 10 has a pad mounting surface 12 with a plurality of bonding pads 11 provided thereon. The dielectric tape layer 2 has an adhesive surface 21 adhered onto the pad mounting surface 12 of the semiconductor chip 10, and a plurality of holes 20 that are registered with the bonding pads 11 to expose the latter. The dielectric tape layer 2 further has a wire mounting surface 22 opposite to the adhesive surface 21. A plurality of wires 23 that traverse the holes 20 are disposed on the wire mounting surface 22. A wire-bonding machine (not shown) processes the portions of the wires 23 that traverse the holes 20 (in the direction of the arrows shown in FIG. 1) so as to bond the wires 23 to the bonding pads 11 in the holes 20. Solder balls 24 are subsequently formed on the wires 23. The printed circuit board 3 has a circuit layout surface 30 formed with circuit traces 31 that bond with the solder balls 24 to establish electrical connection between the circuit traces 31 and the bonding pads 11 via the solder balls 24 and the wires 23.
  • [0006]
    Some of the drawbacks of the conventional semiconductor device 1 are as follows:
  • [0007]
    1. An expensive wire-bonding machine is needed to establish connection between the wires 23 and the bonding pads 11, thereby increasing the production costs. Also, defective products are produced during the wire-bonding operation due to inadequacies of the latter. Particularly, defective products are formed when wires break during the wire-bonding operation, thereby reducing the production yield.
  • [0008]
    2. The wires 23 are susceptible to oxidation and corrosion because they are exposed to air, thereby affecting reliability of the semiconductor device 1.
  • [0009]
    3. Solder balls 24 are needed to establish connection between the circuit traces 31 on the printed circuit board 3 and the semiconductor chip 10. The solder balls 24 are liable to drop off or form unstable electrical contacts, thereby affecting adversely the production yield.
  • [0010]
    4. Because solder balls 24 are used to connect the printed circuit board 3 and the semiconductor chip 10, the contact area between the printed circuit board 3 and the semiconductor chip 10 is relatively small and can lead to eventual undesired separation between the printed circuit board 3 and the semiconductor chip 10.
  • SUMMARY OF THE INVENTION
  • [0011]
    Therefore, the main object of the present invention is to provide a semiconductor device and a method for manufacturing a semiconductor device capable of overcoming the aforesaid drawbacks that are associated with the prior art.
  • [0012]
    According to one aspect of the present invention, a semiconductor device comprises:
  • [0013]
    a semiconductor chip having a pad mounting surface with a plurality of bonding pads provided thereon;
  • [0014]
    a dielectric tape layer having opposite first and second adhesive surfaces, the first adhesive surface being adhered onto the pad mounting surface of the semiconductor chip, the dielectric tape layer being formed with a plurality of holes at positions registered with the bonding pads to expose the bonding pads, each of the holes being confined by a wall that cooperates with a registered one of the bonding pads to form a contact receiving space;
  • [0015]
    a plurality of conductive contacts placed in the contact receiving spaces, respectively; and
  • [0016]
    a printed circuit board having a circuit layout surface adhered onto the second adhesive surface of the dielectric tape layer, the circuit layout surface being formed with circuit traces that are bonded to the conductive contacts to establish electrical connection with the bonding pads.
  • [0017]
    According to another aspect of the present invention, a method for manufacturing a semiconductor device comprises:
  • [0018]
    adhering a first adhesive surface of a dielectric tape layer onto a pad mounting surface of a semiconductor chip, the dielectric tape layer being formed with a plurality of holes at positions registered with bonding pads provided on the pad mounting surface to expose the bonding pads, each of the holes being confined by a wall that cooperates with a registered one of the bonding pads to form a contact receiving space;
  • [0019]
    placing a plurality of conductive contacts in the contact receiving spaces, respectively; and
  • [0020]
    adhering a circuit layout surface of a printed circuit board onto a second adhesive surface of the dielectric tape layer opposite to the first adhesive surface, and bonding circuit traces formed on the circuit layout surface to the conductive contacts to establish electrical connection with the bonding pads.
  • [0021]
    Preferably, the second adhesive surface is provided with a heat-curable adhesive having a curing point that is lower than melting point of the conductive contacts. Thus, adhering of the printed circuit board onto the dielectric tape layer and bonding of the circuit traces to the conductive contacts can be performed simultaneously via a heat curing operation such that the circuit layout surface is already adhered onto the second adhesive layer prior to melting of the conductive contacts.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0022]
    Other features and advantages of the present invention will become apparent in the following detailed description of the preferred embodiments with reference to the accompanying drawings, of which:
  • [0023]
    [0023]FIG. 1 is a partly exploded fragmentary schematic view illustrating a conventional semiconductor device;
  • [0024]
    [0024]FIG. 2 is a fragmentary schematic view of the conventional semiconductor device of FIG. 1;
  • [0025]
    FIGS. 3 to 5 are fragmentary schematic views illustrating the steps of the method for manufacturing the first preferred embodiment of a semiconductor device according to the present invention;
  • [0026]
    [0026]FIG. 6 is a fragmentary schematic view illustrating an intermediate product of the second preferred embodiment of a method for manufacturing a semiconductor device according to the present invention; and
  • [0027]
    [0027]FIGS. 7 and 8 are fragmentary schematic views illustrating some of the steps of the method for manufacturing the third preferred embodiment of a semiconductor device according to the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • [0028]
    Referring to FIGS. 3 to 5, the first preferred embodiment of a semiconductor device 4 according to the present invention is shown to comprise a semiconductor chip 40, a dielectric tape layer 5 and a printed circuit board 6.
  • [0029]
    The semiconductor chip 40 has a pad mounting surface 42 with a plurality of bonding pads 41 provided thereon. The dielectric tape layer 5 has opposite first and second adhesive surfaces 50, 51. A heat-curable adhesive 55 is provided on the first adhesive surface 50 such that the first adhesive surface 50 can be adhered onto the pad mounting surface 42 of the semiconductor chip 40 during a heat curing operation. A conventional laser cutting technique is employed to form a plurality of holes 52 in the dielectric tape layer 5 at positions registered with the bonding pads 41 to expose the latter.
  • [0030]
    Each of the holes 52 is confined by a wall 53 that cooperates with a registered one of the bonding pads 41 to form a contact receiving space. A plurality of conductive contacts 54 are placed in the contact receiving spaces, respectively. In this embodiment, a tin ball is planted in each contact receiving space and serves as a conductive contact 54.
  • [0031]
    The printed circuit board 6 has a circuit layout surface 60 formed with circuit traces 61 that are to be connected to the conductive contacts 54. A heat curing operation is conducted to bond the conductive contacts 54 to the circuit traces 61, and to adhere the circuit layout surface 60 onto the second adhesive surface 51 of the dielectric tape layer 50. Preferably, the second adhesive surface 51 is provided with a heat-curable adhesive 55 having a curing point that is lower than the melting point of the conductive contacts 54. Thus, the circuit layout surface 60 is already adhered onto the second adhesive surface 51 prior to melting of the conductive contacts 54, thereby sealing the contact receiving spaces so that the melt of each conductive contact 54 is prevented from flowing out of the respective contact receiving space to avoid formation of undesired connections with adjacent conductive contacts 54.
  • [0032]
    Referring to FIG. 6, in the second preferred embodiment of a semiconductor device according to the present invention, instead of using tin balls as conductive contacts, each contact 54′ is formed from conductive paste, such as conductive silver paste.
  • [0033]
    Referring to FIGS. 7 and 8, in the third preferred embodiment of a semiconductor device according to the present invention, each contact 54″ is formed by placing a conductive metal material 56, such as a gold or aluminum ball, in each contact receiving space. A chemical electroplating process is subsequently performed to complete each contact 54″ prior to bonding with the circuit traces on the printed circuit board (not shown).
  • [0034]
    While the preferred embodiments as hereinbefore described involve only one semiconductor chip 40 on the printed circuit board 6, it should be noted that, in practice, two or more semiconductor chips 40 may be mounted on the printed circuit board 6 according to the actual requirements.
  • [0035]
    Some of the advantageous attributes of the semiconductor device 4 according to this invention are as follows:
  • [0036]
    1. Since no wire-bonding machine is required, the production costs can be dramatically reduced. Moreover, the adverse effects of wire bonding on the production yield of the semiconductor device 4 are also eliminated.
  • [0037]
    2. Because the conductive contacts 54, 54′, 54″ are sealingly confined by the printed circuit board 6 and the dielectric tape layer 5, the conductive contacts 54, 54′, 54″ can be protected from oxidation and corrosion.
  • [0038]
    3. Because no solder balls are present between the circuit layout surface 60 of the printed circuit board 6 and the second adhesive surface 51 of the dielectric tape layer 5, the printed circuit board 6 can be mounted directly on the dielectric tape layer 5 with a relatively large contact area therebetween to prevent undesired separation of the printed circuit board 6 from the dielectric tape layer 5.
  • [0039]
    4. Due to the design of the conductive contacts 54, 54′, 54″ in the semiconductor device 4 of this invention, the production yield can be substantially higher as compared to the conventional semiconductor device that uses solder balls.
  • [0040]
    While the present invention has been described in connection with what is considered the most practical and preferred embodiments, it is understood that this invention is not limited to the disclosed embodiments but is intended to cover various arrangements included within the spirit and scope of the broadest interpretation so as to encompass all such modifications and equivalent arrangements.

Claims (11)

I claim:
1. A semiconductor device comprising:
a semiconductor chip having a pad mounting surface with a plurality of bonding pads provided thereon;
a dielectric tape layer having opposite first and second adhesive surfaces, said first adhesive surface being adhered onto said pad mounting surface of said semiconductor chip, said dielectric tape layer being formed with a plurality of holes at positions registered with said bonding pads to expose said bonding pads, each of said holes being confined by a wall that cooperates with a registered one of said bonding pads to form a contact receiving space;
a plurality of conductive contacts placed in said contact receiving spaces, respectively; and
a printed circuit board having a circuit layout surface adhered onto said second adhesive surface of said dielectric tape layer, said circuit layout surface being formed with circuit traces that are bonded to said conductive contacts to establish electrical connection with said bonding pads.
2. The semiconductor device as claimed in
claim 1
, wherein said second adhesive surface is provided with a heat-curable adhesive having a curing point that is lower than melting point of said conductive contacts.
3. The semiconductor device as claimed in
claim 1
, wherein each of said conductive contacts is a tin ball.
4. The semiconductor device as claimed in
claim 1
, wherein each of said conductive contacts is formed from conductive paste.
5. The semiconductor device as claimed in
claim 1
, wherein each of said conductive contacts is formed from a conductive material that undergoes chemical electroplating prior to bonding with said circuit traces.
6. A method for manufacturing a semiconductor device, comprising:
adhering a first adhesive surface of a dielectric tape layer onto a pad mounting surface of a semiconductor chip, the dielectric tape layer being formed with a plurality of holes at positions registered with bonding pads provided on the pad mounting surface to expose the bonding pads, each of the holes being confined by a wall that cooperates with a registered one of the bonding pads to form a contact receiving space;
placing a plurality of conductive contacts in the contact receiving spaces, respectively; and
adhering a circuit layout surface of a printed circuit board onto a second adhesive surface of the dielectric tape layer opposite to the first adhesive surface, and bonding circuit traces formed on the circuit layout surface to the conductive contacts to establish electrical connection with the bonding pads.
7. The method as claimed in
claim 6
, wherein the second adhesive surface is provided with a heat-curable adhesive having a curing point that is lower than melting point of the conductive contacts, and adhering of the printed circuit board onto the dielectric tape layer and bonding of the circuit traces to the conductive contacts are performed simultaneously through a heat curing operation such that the circuit layout surface is already adhered onto the second adhesive surface prior to melting of the conductive contacts.
8. The method as claimed in
claim 6
, wherein adhering of the dielectric tape layer onto the semiconductor chip is accomplished by heat curing of a heat-curable adhesive provided on the first adhesive surface.
9. The method as claimed in
claim 6
, wherein each of the conductive contacts is a tin ball.
10. The method as claimed in
claim 6
, wherein each of the conductive contacts is formed from conductive paste.
11. The method as claimed in
claim 6
, wherein each of the conductive contacts is formed from a conductive material that undergoes chemical electroplating prior to bonding with the circuit traces.
US09811795 1999-04-16 2001-03-19 Semiconductor device and method for manufacturing the same Expired - Fee Related US6420210B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW88106140 1999-04-16
TW88106140 1999-04-16
US09329599 US6278183B1 (en) 1999-04-16 1999-06-10 Semiconductor device and method for manufacturing the same
US09811795 US6420210B2 (en) 1999-04-16 2001-03-19 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09811795 US6420210B2 (en) 1999-04-16 2001-03-19 Semiconductor device and method for manufacturing the same

Publications (2)

Publication Number Publication Date
US20010010406A1 true true US20010010406A1 (en) 2001-08-02
US6420210B2 US6420210B2 (en) 2002-07-16

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262483B1 (en) * 1999-04-16 2001-07-17 Ming-Tung Shen Semiconductor chip module and method for manufacturing the same
US7575999B2 (en) * 2004-09-01 2009-08-18 Micron Technology, Inc. Method for creating conductive elements for semiconductor device structures using laser ablation processes and methods of fabricating semiconductor device assemblies

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JPH0258793B2 (en) 1981-08-28 1990-12-10 Fujitsu Ltd
JP2706077B2 (en) 1988-02-12 1998-01-28 株式会社日立製作所 Resin-sealed semiconductor device and a manufacturing method thereof
JP2512999B2 (en) 1988-08-24 1996-07-03 横河電機株式会社 Dram control device
US5468681A (en) * 1989-08-28 1995-11-21 Lsi Logic Corporation Process for interconnecting conductive substrates using an interposer having conductive plastic filled vias
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JPH04199723A (en) 1990-11-29 1992-07-20 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
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JP2655496B2 (en) 1994-11-21 1997-09-17 日本電気株式会社 Face-down connection for the integrated circuit element
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US5776799A (en) * 1996-11-08 1998-07-07 Samsung Electronics Co., Ltd. Lead-on-chip type semiconductor chip package using an adhesive deposited on chip active surfaces at a wafer level and method for manufacturing same
JPH113909A (en) 1997-06-11 1999-01-06 Nitto Denko Corp Flip chip member, sheet-like sealing material, and semiconductor device and its manufacture

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JP3084023B2 (en) grant
JP3084023B1 (en) 2000-09-04 grant
US6420210B2 (en) 2002-07-16 grant
JP2000306956A (en) 2000-11-02 application
US6278183B1 (en) 2001-08-21 grant

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Owner name: COMPUTECH INTERNATIONAL VENTURES LIMITED, HONG KON

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SHEN, MING-TUNG;REEL/FRAME:012962/0131

Effective date: 20020426

REMI Maintenance fee reminder mailed
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Effective date: 20060716