US12492963B2 - Method for determining an imaging quality of an optical system when illuminated by illumination light within an entrance pupil to be measured - Google Patents
Method for determining an imaging quality of an optical system when illuminated by illumination light within an entrance pupil to be measuredInfo
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- US12492963B2 US12492963B2 US17/664,773 US202217664773A US12492963B2 US 12492963 B2 US12492963 B2 US 12492963B2 US 202217664773 A US202217664773 A US 202217664773A US 12492963 B2 US12492963 B2 US 12492963B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
- G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
- G01M11/0264—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested by using targets or reference patterns
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0207—Details of measuring devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
- G01M11/0271—Testing optical properties by measuring geometrical properties or aberrations by using interferometric methods
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/005—Testing of reflective surfaces, e.g. mirrors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0242—Testing optical properties by measuring geometrical properties or aberrations
- G01M11/0257—Testing optical properties by measuring geometrical properties or aberrations by analyzing the image formed by the object to be tested
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0081—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for altering, e.g. enlarging, the entrance or exit pupil
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
Definitions
- the disclosure relates to a method for determining an imaging quality of an optical system when illuminated by illumination light within an entrance pupil to be measured.
- a metrology system for measuring an aerial image of a lithography mask in three dimensions is known from WO 2016/012 426 A1.
- DE 10 2013 219 524 A1 describes a device and a method for determining an imaging quality of an optical system, and an optical system.
- DE 10 2013 219 524 A1 has described a phase retrieval method for determining a wavefront on the basis of the imaging of a pinhole.
- the present disclosure seeks to provide a method for determining an imaging quality of an optical system as flexibly as possible in relation to the pupil to be measured.
- the disclosure provides a method for determining an imaging quality of an optical system when illuminated by illumination light within an entrance pupil to be measured and/or within an exit pupil to be measured, including the following steps:
- an appropriate subaperture stop can be introduced into an entrance pupil of a projection optical unit of the optical system and can be positioned transversely to the illumination light beam path such that this yields a desired illumination direction in accordance with specified pupil coordinates.
- the pupil to be measured can be an elliptical pupil, a round pupil or else a pupil delimited by a free-form shape.
- a pixel resolution of the spatially resolving detection device can be adapted to the numerical apertures of the pupil to be measured. A greater pixel resolution of the detection device is chosen for a higher numerical aperture.
- the wavefront of the optical system in this subaperture can be deduced with the aid of a phase retrieval method, which is known in principle from the literature, for example from DE 10 2013 219 524 A1.
- a projection method error reduction algorithm, Gerchberg-Saxton method, IFTA method
- a conventional iterative optimization method gradient descent, least square, damped least square, genetic search method, simplex, Chambolle-Pock optimization, back propagation method
- a direct inversion method Extended Nijboer Zernike Decomposition (S. Van Haver, The Extended Nijboer-Zernike Diffraction Theory and its Applications, 2010, http://resolver.tudelft.nl/uuid:8d96ba75-24da-4e31-a750-1bc348155061
- database-based method machine learning method
- the pupil is scanned by way of the subapertures.
- a scan of the pupil by way of the subapertures can facilitate a well comparable method procedure.
- the scan of the pupil by way of the subapertures can be implemented by exactly one line of subapertures.
- a scan over a plurality of subaperture lines is also possible.
- the scan can be such that a chief ray polar angle of the illumination light remains constant.
- the test structure is always illuminated with the same chief ray angle of incidence.
- the method includes eliminating a test structure contribution to an influence on the wavefront by the test structure for the purposes of the test structure-independent determination of the imaging quality of the optical system. Such embodiments can improve the result of the method by virtue of eliminating test structure contributions that systematically falsify the determination of the imaging quality.
- the test structure contribution is determined for exactly one specified subaperture and this contribution is then also used for the test structure-independent determination of the imaging quality of the optical system for the further subapertures.
- an outlay associated with determining the test structure contribution can be reduced.
- the test structure contribution determined once for exactly one specified subaperture can be post-processed or converted for the purposes of eliminating the test structure contribution in the case of the other subapertures, for example by rotating the test structure contribution in accordance with an illumination angle, for example a chief ray azimuth angle, assigned to the respective subaperture.
- a linear system of equations for determining the imaging quality is solved while eliminating the test structure contribution, wherein data of the wavefront determination prior to the elimination of the test structure contribution, contributions of the test structure, and a transformation matrix are included in the linear system of equations.
- shift-rotation methods Exponents of such methods are known as shift-rotation methods. Examples of such a shift-rotation method can be found in the specialist article by D. Su et al. Absolute surface figure testing by shift-rotation method using Zernike polynomials, Optics Letters Vol. 37, No. 15, 3198-3200, 2012, https://doi.org/10.1364/OL.37.003198; Y. Liu, et.
- a dependence, on a respective coordinate in the solution space to be determined is described by way of a decomposition into basis functions, of: the data of the wavefront determination prior to the elimi-nation of the test structure contribution; of the contributions of the test structure; and/or of the transformation matrix.
- basis functions Zernike polynomials, Bhatia-Wolf polynomials, Bessel functions, solutions to the Laplace equation, orthogonalized, locally distributed, narrow exponential functions and/or Gaussian functions (optionally distributed on a grid), orthogonalized, locally distributed spline polynomials (optionally distributed on a grid) and orthogonalized mixtures of basis functions.
- such an orthogonalization can be implemented using the Gram-Schmidt orthogonalization method (Korn and Korn, “Mathematical Handbook for Principles and Engineers”, McGraw-Hill, 1968; D. Malacara, “Optical Shop Testing”, Wiley-Interscience, 1992; http://de.wikipedia.org/wiki/Schmidtsches_Orthonormalmaschinesmaschine).
- a pinhole is used as the test structure. Such a pinhole as a test structure has proven its worth in practice.
- the pinhole has an elliptical edge.
- Such an elliptical pinhole was found to be particularly suitable for determining aberrations in the case of anamorphic imaging systems, that is to say imaging systems with different imaging scales in mutually perpendicular planes.
- Such an elliptical pinhole was found to be also particularly suitable for determining aberrations in the case of isomorphic imaging systems with an elliptical entrance pupil.
- the pupil to be determined has an elliptical edge, there being, within the determination of the wavefront, a representation of a pupil function for the at least sectional description of the pupil to be determined on a coordinate grid that is equidistant in mutually perpendicular pupil coordinates and parameterized basis functions that are scaled in accordance with a principal axis ratio of an elliptical edge of the pupil.
- a representation of a pupil function for the at least sectional description of the pupil to be determined on a coordinate grid that is equidistant in mutually perpendicular pupil coordinates and parameterized basis functions that are scaled in accordance with a principal axis ratio of an elliptical edge of the pupil Such embodiments were found to be particularly suitable for implementation in the determination method.
- the pupil to be determined has an elliptical edge, there being, within the determination of the wavefront, a representation of a pupil function for the at least sectional description of the pupil to be determined on a coordinate grid that is scaled in mutually perpendicular pupil coordinates in accordance with a principal axis ratio of an elliptical edge of the pupil and parameterized basis functions that are scaled uniformly.
- the disclosure provides a metrology system for carrying out a method as disclosed above.
- the metrology system has an illumination optical unit for illuminating the test structure and having an imaging optical unit, the imaging quality of which is intended to be determined, for imaging the test structure toward a spatially resolving detection device.
- the present disclosure also seeks to provide a metrology system of the type set forth at the outset, in such a way that a phase retrieval method, for example according to the prior art, is also made available for an elliptical pupil to be measured.
- the disclosure provides a metrology system having: a holder for a test structure; an illumination optical unit for illuminating the test structure in an object plane specified by the holder; a spatially resolving detection device; an imaging optical unit for imaging the test structure toward the detection device in an image plane; and a stop with an aperture with an elliptical edge, arranged in an illumination pupil plane and/or in an entrance pupil of the imaging optical unit.
- an elliptical pupil can be measured directly by using a stop with an elliptical edge that is arranged in a pupil plane of the metrology system, and can be used to determine a wavefront by way of a phase retrieval method.
- a metrology system can be used to determine, for example, the imaging quality of an optical system when illuminated with illumination light within the entrance pupil to be measured and/or within an exit pupil to be measured.
- basis functions parameterized in scaled fashion for example compressed Zernike polynomials and/or scaled coordinate grids and uniformly scaled parameterized basis functions, in accordance with the determination method explained above.
- the metrology system is for carrying out a method as described above. Features of such a metrology system to those explained above with reference to the determination method.
- FIG. 1 very schematically shows a plan view, with a direction of view perpendicular to a plane of incidence, of a metrology system for determining an imaging quality of an optical system when illuminated with illumination light within an entrance pupil to be measured, comprising an illumination optical unit and an imaging optical unit, both of which are respectively represented very schematically;
- FIG. 2 shows a test structure in the form of an EUV pinhole for use as a reflective object to be imaged in the metrology system according to FIG. 1 , in a perspective and magnified fashion;
- FIG. 3 shows results of an intensity measurement in an image plane of the imaging optical unit of the metrology system when imaging the test structure according to FIG. 2 , for different positions of an arrangement plane of the test structure relative to an object plane (z-focus stack);
- FIG. 4 shows an entrance pupil to be measured of the optical system to be measured, the entrance pupil being embodied as an elliptical entrance pupil, together with a set of subapertures, each embodied as a subpupil with a circular edge, for the one-line scan of the entrance pupil to be measured, with each of the subapertures corresponding to a specified illumination angle distribution for illuminating the test structure with the illumination light, with the test structure being illuminated sequentially with an illumination angle distribution corresponding to a superposition of all subapertures;
- FIG. 5 shows, in a representation similar to FIG. 4 , a variant of a scan of the entrance pupil to be measured using subapertures, the scan being implemented such that a chief ray polar angle of the illumination of the test structure remains constant for all subapertures;
- FIG. 6 shows, in a representation similar to FIGS. 4 and 5 , a further variant of a multi-line Cartesian scan of the entrance pupil to be measured using subapertures;
- FIGS. 7 to 11 show wavefront measurement results in a contour line diagram, in each case represented as phase contributions in a pupil plane of the imaging optical unit, for five selected sub apertures of a scan according to FIG. 5 ;
- FIGS. 12 to 16 show separated test structure contributions to the wavefront measurement results according to FIGS. 7 to 11 , once again represented in each case using a contour line diagram;
- FIGS. 17 to 21 show wavefront measurement results in sections of the entrance pupil to be measured corresponding to the subapertures according to FIGS. 7 to 11 after subtraction of the test structure contributions according to FIGS. 12 to 16 from the original wavefront measurement results according to FIGS. 7 to 11 , that is to say after the elimination of the test structure contributions, once again represented in each case using a contour line diagram;
- FIG. 22 shows a superposition of the subaperture contributions of the wavefront measurement results according to FIGS. 17 to 21 ;
- FIG. 23 shows a restriction of the wavefront measurement results according to FIG. 22 to the entrance pupil to be measured, that is to say the phase of the wavefront of the optical system to be measured within the entrance pupil to be measured;
- FIG. 24 shows a representation, less schematically in relation to the imaging optical unit, of an imaging system having a plurality of lenses which may be used in a further embodiment of a metrology system in place of the metrology system according to FIG. 1 , the imaging system being represented between an object plane and image planes of a focus stack to be measured;
- FIG. 25 shows an example of a phase distribution in an exit pupil to be measured of an anamorphic optical system, represented on a square grid with an elliptic apodization, parameterized in accordance with an ellipticity corresponding to compressed Zernike polynomials;
- FIG. 26 shows sections through the pupil function according to FIG. 25 along a semimajor and a semiminor axis of the elliptical pupil mask
- FIG. 27 shows, in a representation similar to FIG. 25 , the pupil function according to FIG. 25 represented on a non-square pupil grid, which has been matched to the principal axis ratio of the elliptical exit pupil, with a circular apodization and parameterization of the pupil function by way of conventional, non-compressed Zernike polynomials; and
- FIG. 28 shows, in a representation similar to FIG. 26 , two sections through the pupil function according to FIG. 27 along the two orthogonal principal axes.
- a Cartesian xyz-coordinate system is used hereinafter.
- the x-axis runs perpendicularly to the plane of the drawing and out of the latter.
- the y-axis runs towards the right in FIG. 1 .
- the z-axis runs upwards.
- FIG. 1 shows a beam path of EUV illumination light or imaging light 1 in a metrology system 2 for determining an imaging quality of an optical system when illuminated by the illumination light 1 within an entrance pupil 11 to be measured.
- a test structure 5 (cf., FIG. 2 ) in the form of a reticle or a lithography mask arranged in an object field 3 in an object plane 4 is imaged using the EUV illumination light 1 .
- the test structure 5 is also referred to as object or sample.
- the metrology system 2 is used to analyze a three-dimensional (3-D) aerial image (aerial image metrology system).
- Applications include the reproduction of an aerial image of a lithography mask, as the aerial image would also look like in a producing projection exposure apparatus, for example in a scanner.
- Such systems are known from WO 2016/012 426 A1, from US 2013/0063716 A1 (cf., FIG. 3 therein), from DE 102 20 815 A1 (cf., FIG. 9 therein), from DE 102 20 816 A1 (cf., FIG. 2 therein) and from US 2013/0083321 A1.
- the illumination light 1 is reflected at the object 5 .
- the EUV illumination light 1 is produced by an EUV light source 6 .
- the light source 6 can be a laser plasma source (LPP; laser produced plasma) or a discharge source (DPP; discharge produced plasma).
- LPP laser plasma source
- DPP discharge produced plasma
- a synchrotron-based light source may also be used, for example a free electron laser (FEL).
- a used wavelength of the EUV light source may range between 5 nm and 30 nm.
- a light source for another used light wavelength may also be used instead of the light source 6 , for example a light source for a used wavelength of 193 nm.
- the latter can be used for a reflective or else for a transmissive object 5 .
- a transmissive object is a pinhole aperture.
- An illumination optical unit 7 of the metrology system 2 is arranged between the light source 6 and the object 5 .
- the illumination optical unit 7 serves for the illumination of the object 5 to be examined with a defined illumination intensity distribution over the object field 3 and at the same time with a defined illumination angle distribution with which the field points of the object field 3 are illuminated.
- This illumination angle distribution is also referred to hereinafter as illumination subaperture.
- the illumination subaperture is delimited by way of a sigma subaperture stop 8 of the illumination optical unit 7 , which is arranged in an illumination optical unit pupil plane 9 .
- a corresponding subaperture stop may also be present in the imaging optical unit of the metrology system 2 , which is yet to be described below.
- the sigma subaperture stop 8 restricts a beam of illumination light 1 which is incident thereon on the edge.
- the sigma subaperture stop 8 and/or the stop in the imaging optical unit can also shadow the illumination light beam from the inside, that is to say act as an obscuration stop.
- a corresponding stop can have an inner stop body that accordingly shadows the beam on the inside, the stop body being connected to an outer stop support body by way of a plurality of webs, for example by way of four webs.
- the sigma subaperture stop 8 is displaceable by way of a displacement drive 8 a in the illumination optical unit pupil plane 9 , that is to say parallel to the xy-plane, in a defined fashion.
- the elliptical entrance pupil 11 has a ratio between the major semiaxis parallel to the x axis and the minor semiaxis parallel to they axis of 2:1.
- Other axis ratios of the elliptical edge contour 10 in the range from 10:1 to 1.1:1 are also possible, for example of 1.5:1, 1.6:1, 2.5:1, 3:1, 4:1, 5:1 or 8:1.
- the illumination and imaging light 1 enters an imaging optical unit or projection optical unit 13 of the metrology system 2 .
- a projection optical unit subaperture which is specified by an NA subaperture stop 11 a in the entrance pupil 11 of the projection optical unit 13 in FIG. 1 .
- the NA subaperture stop 11 a is displaceable by way of a displacement drive 11 b in the projection optical unit pupil plane 11 , that is to say parallel to the xy-plane, in a defined fashion.
- the sigma subaperture stop and the NA subaperture stop are aligned in such a way relative to one another that both stops are struck centrally by a central light ray of the illumination light 1 and the reflection at the test structure 5 .
- the sigma subaperture stop and the NA subaperture stop can be centered relative to one another.
- the region of the entrance pupil 11 of the projection optical unit 13 defined by the NA subaperture stop is referred to as subaperture.
- the imaging optical unit 13 to be measured serves for imaging the object 5 towards a spatially resolving detection device 14 of the metrology system 2 .
- the detection device 14 is designed for example as a CCD detector. A CMOS detector can also be used.
- the detection device 14 is arranged in an image plane 15 of the projection optical unit 13 .
- the detection device 14 is signal connected to a digital image processing device 17 .
- a pixel spatial resolution of the detection device 14 in the xy-plane can be specified in such a way that it is inversely proportional to the numerical aperture of the entrance pupil 11 to be measured, in the coordinate directions x and y (NA x , NA y ). In the direction of the x-coordinate, this pixel spatial resolution is regularly less than ⁇ /2NA x , and, in the direction of the y-coordinate, it is regularly less than ⁇ /2NA y . In this case, ⁇ is the wavelength of the illumination light 1 .
- the pixel spatial resolution of the detection device 14 can also be implemented with square pixel dimensions, independently of NA x , NA y .
- a spatial resolution of the detection device 14 can be increased or reduced by resampling.
- a detection device with pixels with different dimensions in the x- and y-direction is also possible.
- the object 5 is carried by an object holder or a holder 18 .
- the holder 18 can be displaced by a displacement drive 19 on the one hand parallel to the xy plane and on the other hand perpendicularly to this plane, that is to say in the z direction.
- the displacement drive 19 is controlled by a central control device 20 , which, in a way that is not represented any more specifically, is in signaling connection with the components to be controlled.
- the optical set-up of the metrology system 2 serves for the most exact possible emulation of an illumination and an imaging in the course of a projection exposure of the object 5 during the projection-lithographic production of semiconductor components.
- FIG. 1 shows various possible arrangement planes of the test structure 5 in the region of the object plane 4 , in each case using a dashed line.
- the test structure 5 is illuminated at different distance positions z m of the test structure 5 relative to the object plane 4 using the illumination angle distribution respectively specified by the subaperture 10 i , and an intensity I(x, y, z m ) is recorded in spatially resolved fashion in the image plane 15 for the respective distance position z m .
- This measurement result I(x, y, z m ) is also referred to as an aerial image.
- the number of focal planes z m can be between two and twenty, for example between ten and fifteen. In this case, there is a total displacement in the z-direction over several Rayleigh units (NA/ ⁇ 2 ).
- test structure 5 Depicted in FIG. 1 as an insert is a xy-plan view of the test structure 5 , which may be in the form of a round or an elliptical test structure.
- FIG. 1 also still schematically represents an exit pupil 21 of the projection optical unit 13 .
- FIG. 1 bottom, shows three measurement results of the detection device 14 , once again in a xy-plan view, with the central measurement result showing the image representation of the test structure 5 in the case of an arrangement in the object plane 4 and the other two measurement results showing the image representations in which the test structure 5 has been displaced in comparison with the z-coordinate of the object plane 4 , once in the positive z-direction and once in the negative z-direction.
- An aerial image of the test structure 5 arises from the totality of the measurement results assigned to the respective z-coordinates.
- FIG. 2 shows details of the test structure 5 , which is embodied as a reflective pinhole.
- the course of a chief ray of the illumination light 1 upon reflection at the test structure 5 is depicted schematically.
- a chief ray angle of incidence of the illumination light 1 on the pinhole of the test structure 5 ranges between 3° and 8°, for example 5° or 6°.
- the pinhole of the test structure 5 has a diameter ranging between 100 nm and 150 nm.
- the pinhole is formed in an absorber layer 22 which in turn is applied to a highly reflective multilayer layer 23 .
- the absorber layer has a thickness ranging between 50 nm and 70 nm.
- the multilayer layer has a thickness ranging between 250 nm and 300 nm.
- the pinhole of the test structure 5 may be elliptical.
- the principal axes of the pinhole can have approximately the same size as the Airy disk of the projection optical unit 13 , that is to say 2.44 ⁇ /NA x in the direction of the x-coordinate and 2.44 ⁇ /NA y in the direction of the y-coordinate.
- the test structure 5 may have a single pinhole or else a plurality of pinholes, such as a periodic array of pinholes.
- Other test structures are possible, for example as described in US 2015/0355052 A1.
- FIG. 3 shows a result I(x, y, z m ) as a sequence of five measurements with different z-coordinate of the test structure 5 , with the middle measurement of the five having emerged with an arrangement of the test structure in the object plane 4 .
- measurement results of the detection device 14 are once again depicted.
- FIG. 4 shows an embodiment of a single-line scan of the entrance pupil 11 of the projection optical unit 13 to be measured, using the subapertures 10 1 to 10 5 which are specified by way of the subapertures stops 8 and 11 a of the illumination optical unit 7 and the projection optical unit 13 .
- These pupils are represented in angle space, that is to say in the pupil coordinates kx (corresponding to the x spatial coordinate) and ky (corresponding to the y spatial coordinate).
- kx corresponding to the x spatial coordinate
- ky corresponding to the y spatial coordinate
- the centers of the various subapertures 10 i that is to say the relative position of the respective chief rays, are labeled by triangles in FIG. 4 .
- These centers of adjacent subapertures 10 i , 10 i+1 are shifted with respect to one another by a constant increment in the kx-direction.
- the centers of the subapertures 10 i each have the same ky-coordinate.
- An envelope of all subapertures 10 i covers, in its entirety, the entrance pupil 11 to be measured.
- the center of the subaperture 10 3 coincides with the center of the elliptical entrance pupil 11 to be measured.
- FIG. 5 shows a variant of a scan of the entrance pupil 11 to be measured, using the subs apertures 10 i .
- a scan with five subapertures 10 1 to 10 5 is depicted.
- the chief ray polar angle ⁇ has an absolute value of slightly more than 0.1.
- This chief ray polar angle ⁇ is measured between the origin 0,0 of the pupil plane 9 and the respective center of the subaperture 10 i .
- the subapertures 10 i thus are shifted in relation to one another in such a way that the chief ray polar angle ⁇ of the respective subaperture remains constant.
- the subapertures 10 1 to 10 5 sweep over a chief ray is azimuth angle ⁇ which is approximately 75° in the embodiment according to FIG. 5 .
- FIG. 6 shows a further variant of a scan of the elliptical entrance pupil 11 to be measured, using subapertures 10 i,j .
- i specifies the line number
- j specifies the column number of the respective subaperture 10 i,j .
- FIGS. 7 to 11 show results of a wavefront measurement on the basis of a use of the subapertures 10 5 ( FIG. 7 ), 10 4 ( FIG. 8 ), 10 3 ( FIG. 9 ), 10 2 ( FIG. 10 ) and 10 1 ( FIG. 11 ).
- a measurement was carried out via the scanning according to FIG. 5 with the constant chief ray polar angle.
- FIG. 7 depicts a phase of a wavefront which was determined from the measurement results of the focus stack for the respectively set subaperture 10 i .
- This determination of the phase contribution according to FIGS. 7 to 11 is implemented with the aid of a phase retrieval method, which is known from DE 10 2013 219 524 B4.
- FIGS. 12 to 16 in turn show the phases of a test structure contribution to an influence on the wavefront of the illumination light 1 by the test structure 5 .
- this test structure contribution can be separated and eliminated from the measurement result according to FIGS. 7 to 11 .
- the test structure contribution during the illumination with the respective subaperture 10 5 ( FIG. 12 ) to 10 1 ( FIG. 16 ) remains constant in respect of the is phase distribution, with only an orientation of this phase distribution changing in accordance with the rotation of the chief ray azimuth angle ⁇ .
- a “pole” 24 of smallest phase values of the test structure contribution points approximately to the right in FIG. 12 and approximately to the top in FIG. 16 , corresponding to the chief ray azimuth angle ⁇ changed by approximately 75°.
- test structure contribution according to FIGS. 12 to 16 can be determined independently of the wavefront measurement according to FIGS. 7 to 11 .
- FIGS. 17 to 21 show, once again in a representation similar to FIGS. 7 to 11 , the result of the wavefront measurement for the respective subaperture 10 5 ( FIG. 17 ) to 10 1 ( FIG. 21 ) after the elimination of the test structure contribution according to FIGS. 12 to 16 .
- the wavefront phase contribution measured or determined by way of the respective subaperture 10 5 to 10 1 during the measurement according to FIGS. 17 to 21 is bounded by way of a circular edge depicted using dots and, moreover, there is a depiction of the wavefront phase of the optical system to be measured within the pupil plane of the respective subaperture 10 i .
- FIG. 22 shows the superposition of the subaperture determination results according to FIGS. 17 to 21 , that is to say the entire determined wavefront component in the pupil plane of the optical system to be measured.
- FIG. 23 shows the restriction of the determination result according to FIG. 22 to the elliptical entrance pupil 11 to be measured.
- T ( T W 1 T P 1 ⁇ ⁇ T W n T P n )
- ⁇ T P i ⁇ are given by the m ⁇ m identity matrices I m if the contribution of the pinhole is independent of kx. Should the pinhole contribution depend on kx, this dependence is modeled by a suitable choice of the transformation matrices ⁇ T P i ⁇ .
- the matrices correspond to a rotation of the wavefront points. If the wavefronts are described on a Cartesian grid, the rotation usually involves an interpolation of the pixel values. In this case, both a “nearest neighbor” interpolation and a linear (or higher order) interpolation are possible and are modeled accordingly in ⁇ T P i ⁇ .
- T ⁇ ( W P ) T ⁇ ( W P ) can be solved using conventional methods for solving linear systems of equations and the wavefront aberration W to be measured of the projection optical unit and the component of the wavefront aberrations P caused by the pinhole can be determined in this way.
- Zernike polynomials can be fitted to the determined wavefront aberrations W of the projection optical unit in the region of the elliptical pupil to be measured and of the pinhole P, and hence it is possible to determine the Zernike spectrum.
- the method from the application example can also be used to improve the wavefront measurement on a round, circular entrance pupil of an optical unit to be measured, rather than on the elliptical entrance pupil 11 , since the contributions of the pinhole and the projection optical unit can be separated.
- the measured aerial image I(x, y, z m ) is compared with a simulated aerial image I sim and fit parameters of a function set for describing the simulated aerial image are adapted until a difference between the measured aerial image and the simulated aerial image has been minimized.
- the wavefront of the optical system is determined within the phase retrieval on the basis of the minimized difference between the measured and the simulated aerial image.
- phase retrieval difference minimization can be optimized with the aid of various methods. These include projection methods which are also known as error reduction algorithms, Gerchberg-Saxton methods or IFTA methods.
- projection methods which are also known as error reduction algorithms, Gerchberg-Saxton methods or IFTA methods.
- IFTA methods IFTA methods.
- conventional iterative optimization methods is also possible.
- such methods include gradient descent, least square, damped least square, genetic search method, simplex method, Chambolle-Pock optimization, back propagation method.
- Direct inversion methods can also be used. Examples thereof include extended Nijbour Zernike decomposition or else a machine learning-based method on the basis of, for example, previous results stored in a database. If aberrations of the optical system are expected as a matter of principle within the entrance pupil to be measured, a sufficiently densely sampled database can be generated via simulation. The retrieval can then be implemented via the search in this database.
- a network can be trained with the aid of a precalculated aberration data
- a description of these imaging aberrations that is to say for example a description of the phase distribution according to FIG. 23 , can be decomposed into basis functions. Such an optimization via basis functions avoids unwanted result noise.
- Zernike polynomials are suitable as basis functions as a matter of principle.
- Bhatia-Wolf polynomials, Bessel functions, solutions to the Laplace equation, orthogonalized, locally distributed, narrow exponential functions and/or Gaussian functions (optionally distributed on a grid), orthogonalized, locally distributed spline polynomials (optionally distributed on a grid) and orthogonalized mixtures of basis functions were found to be advantageous in respect of the describability of a shift/rotation.
- the orthogonalization of the functions improves a robustness of the optimization and a comparability of the results.
- a partial orthogonalization of the basis functions is also possible.
- a mixture of the possible basis functions listed above may also be particularly suitable, for example a combination of Zernike polynomials and orthogonalized, locally distributed, narrow exponential functions.
- a small number of Zernike polynomials for example 9 to 16 Zernike polynomials, are used to describe the conventional imaging aberrations in this way.
- localized Pilk functions for example in the form of an exponential function or a Gaussian function, are used to be able to describe local deviations.
- the exponential functions are partially orthogonalized with respect to the Zernike functions.
- a partial orthogonalization of a function set F with respect to another function set G is understood to mean that each element of F is converted with the aid of a method such that it is subsequently orthogonal to all elements of G.
- this can be implemented using the orthogonalization step of the Gram-Schmidt orthogonalization method.
- the difference to complete orthogonalization is that the elements in F and G need not necessarily be orthogonal amongst themselves.
- such an orthogonalization can be implemented using the GramSchmidt orthogonalization method (D. Malacara, “Optical Shop Testing”, Wiley-Interscience, 1992; http://de.wikipedia.org/wiki/Schmidtsches_Orthonormalmaschinesmaschine).
- FIG. 24 shows an embodiment of the metrology system 2 between the object plane 4 and the image plane 15 for the purposes of elucidating the phase retrieval method.
- Components and functions corresponding to those which have already been described with reference to the above-described figures, particularly with reference to FIG. 1 bear the same reference signs and will not be discussed in detail again.
- the projection optical unit 13 is elucidated as a system of lenses with a total of 10 lenses L 1 to L 10 .
- a pupil plane 25 of the projection optical unit 13 to be measured which is optically conjugate to the illumination optical unit pupil plane 9 , is depicted.
- FIG. 24 moreover elucidates a wave surface 26 of a wavefront of the optical system to be measured, on the basis of which the imaging quality of the optical system is described.
- FIG. 23 shows a phase profile of such a wave surface 26 in the pupil plane.
- FIG. 24 shows further parallel reflective image planes at a distance therefrom, which further reflective image planes arise on account of the displacement of the test object 5 in the z-direction.
- the detection device 14 can also be displaced in the z-direction; this is elucidated in FIG. 24 .
- I abs( H pupil_image ( H object_pupil ( E object ) ⁇ E pupil )) 2 +N (2)
- H object_pupil is an optical transfer function between the object plane 4 and the pupil 11 in the pupil plane 25 ;
- the wave function E pupil is back-calculated from the measured intensity value I.
- a forward simulation of the imaging of the test object 5 by the projection optical unit 3 is implemented and a difference between a simulation parameterized in the aberrations, that is to say in the imaging aberrations, and the measurement results I is minimized.
- an anamorphic projection optical unit 13 If an anamorphic projection optical unit 13 is used, the simulation is to be adapted in accordance with the anamorphic set up.
- a simulation formulation based on Fourier transforms lends itself to the realization of a fast and exact simulation.
- the elliptically shaped pupil 11 of the projection optical unit to be parameterized to this end can be parameterized via the following variants:
- the pupil function can be represented on a square grid together with an elliptical apodization and a parameterization of the pupil function by way of compressed Zernike is polynomials, that is to say Zernike polynomials that are scaled differently in the x- and y-directions.
- FIGS. 25 and 26 show an example of a parameterization of the elliptical pupil 11 , represented thus, in an equidistant kx- and ky-grid (square grid).
- the pupil function is set to zero within a circle with the radius of the ellipse semimajor axis (zero padding).
- FIG. 26 shows a section through the pupil function depicted in FIG. 25 in a (kx, ky)-plan view, firstly in the kx-direction (cut line 27 ) and secondly in the ky-direction (cut line 28 ).
- a variant of the representation of the pupil function is implemented on a non-square pupil grid, that is to say in which the scaling differs in the kx- and ky-directions.
- the scaling of the grids that is to say the grid widths in kx and ky, is coupled to the absolute values of the associated numerical apertures NAx, NAy of the elliptical pupil 11 .
- this representation has a circular apodization and a parameterization of the pupil function by way of conventional Zernike polynomials, and not by way of compressed Zernike polynomials.
- the different grid widths in kx and ky then are taken into account in the scaling of the Fourier transform.
- either use can be made of an adapted zero padding or use can be made of a chirp Z-transform, in which different adapted scaling parameters should be selected.
- the pupil grid widths in kx and ky can be chosen in such a way that the pupil function is maximally scanned and numerically has the highest information density.
- FIGS. 27 and 28 show the representation of an exemplary pupil function which corresponds to that according to FIGS. 25 and 26 , in accordance with this variant with the non-square pupil grid and the circular apodization. It should be observed that the pupil coordinates kx, ky are scaled differently in FIGS. 27 and 28 .
- the scaling factor scal x/y of the chirp Z-transform between a given pixel grid of the detection device 14 and the x- and y-grid according to the pupil representation according to FIGS. 27 and 28 with maximum scanning of the pupil function is calculated as:
- dx dy.
- the pixel dimensions of the detection device 14 in the x- and y-directions may, in principle, also be chosen to be different.
- a further variant of the calculation lies in the use of a so-called error reduction algorithm, either with a conventional FFT and use of an elliptical apodization matrix or with the chirp Z-transform, adapted scaling parameters and the use of a circular apodization matrix.
- a so-called error reduction algorithm either with a conventional FFT and use of an elliptical apodization matrix or with the chirp Z-transform, adapted scaling parameters and the use of a circular apodization matrix.
- the measurement above was implemented with round subapertures 10 i .
- the is measurement can also be carried out using elliptically bounded subapertures. This can likewise be used to determine the aberrations over an elliptical entrance pupil.
- measurements can be carried out directly using an elliptical stop at the location of the stops 8 and 11 a , respectively.
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Abstract
Description
-
- arranging a test structure in an object plane of the optical system;
- specifying an illumination angle distribution for illuminating the test structure with the illumination light;
- illuminating the test structure with the specified illumination angle distribution at different distance positions of the test structure relative to the object plane;
- measuring an intensity of the illumination light in an image plane of the optical system using a spatially resolving detection device for the purposes of determining a measured aerial image of the test structure, the illumination light having been guided by the optical system when imaging the test structure at each distance position;
- comparing the measured aerial image with a simulated aerial image and adapting fit parameters of a function set for describing the simulated aerial image until a difference between the measured aerial image and the simulated aerial image has been minimized;
- determining a wavefront of the optical system on the basis of the result of the minimized difference between the measured and the simulated aerial image, the specified illumination angle distribution corresponding to a subaperture within the pupil to be measured;
- repeating the specifying to determining steps using a further specified subaperture which is shifted relative to the already measured subaperture in the pupil to be measured; and
- determining the wavefront of the optical system by combining the results obtained for the measured subapertures over the entire pupil to be measured.
-
- : wavefront points to be determined of the projection optical unit 13 (cf., above,
FIGS. 17 to 21 ), typically q>m (superposition of the results according toFIGS. 7 to 11 ; cf.,FIGS. 22 and 23 ), the index q running over all points that are covered by at least one subaperture 10 i (i=1 to n);
- : wavefront points to be determined of the projection optical unit 13 (cf., above,
-
- : pinhole contribution (cf.,
FIGS. 12 to 16 ), m wavefront points;
- : pinhole contribution (cf.,
-
- : combined transformation matrix;
- TW
i : m×q optics transformation matrix, subaperture i - TP
i : m×m pinhole transformation matrix, subaperture i
can be solved using conventional methods for solving linear systems of equations and the wavefront aberration W to be measured of the projection optical unit and the component of the wavefront aberrations P caused by the pinhole can be determined in this way.
I=abs(H pupil_image(H object_pupil(E object)·E pupil))2 +N (2)
-
- Hpupil_image is an optical transfer function between the pupil 11 and the image plane 15;
- Eobject is a complex amplitude (amplitude and phase) of the test object 5;
- Epupil is a system transfer function in the form of a complex pupil amplitude, that is to say the desired wave function of the optical system; and
- N is a contribution which describes, inter alia, the noise in the detection device 14.
-
- λ is the wavelength of the illumination light 1;
- dx (dy) is the pixel dimension and
- NAx/y is the numerical aperture of the pupil 11 in the x- and y-directions.
Claims (20)
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| DE102021205541.9 | 2021-05-31 |
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| EP (1) | EP4099093A1 (en) |
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| DE102022200372A1 (en) * | 2022-01-14 | 2023-07-20 | Carl Zeiss Smt Gmbh | Method for simulating lighting and imaging properties of an optical production system when illuminating and imaging an object using an optical measuring system |
| DE102022107686A1 (en) * | 2022-03-31 | 2023-10-05 | Trioptics Gmbh | Method and device for determining an imaging quality of an optical system to be tested |
| EP4258058A1 (en) * | 2022-04-07 | 2023-10-11 | ASML Netherlands B.V. | Apparatus and method for determining an angular reflectivity profile |
| DE102022212750A1 (en) * | 2022-11-29 | 2024-05-29 | Carl Zeiss Smt Gmbh | Method for three-dimensionally determining an aerial image of a measuring object using a metrology system and metrology system for carrying out the determination method |
| WO2024170176A1 (en) * | 2023-02-14 | 2024-08-22 | Asml Netherlands B.V. | Method for determining an optical property |
| DE102023205136A1 (en) * | 2023-06-01 | 2024-12-05 | Carl Zeiss Smt Gmbh | Method for simulating illumination and imaging properties of an optical production system when illuminating and imaging an object by means of an optical measuring system |
| DE102024205221A1 (en) * | 2024-06-06 | 2025-02-20 | Carl Zeiss Smt Gmbh | Method for determining an imaging quality of an optical assembly of an optical system |
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| EP4099093A1 (en) | 2022-12-07 |
| DE102021205541B4 (en) | 2025-06-26 |
| TW202311715A (en) | 2023-03-16 |
| KR20220162081A (en) | 2022-12-07 |
| JP7503098B2 (en) | 2024-06-19 |
| KR102852636B1 (en) | 2025-09-02 |
| CN115479753A (en) | 2022-12-16 |
| JP2022184816A (en) | 2022-12-13 |
| US20220381643A1 (en) | 2022-12-01 |
| DE102021205541A1 (en) | 2022-12-01 |
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| TWI845952B (en) | 2024-06-21 |
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