US12143090B2 - Surface acoustic wave (SAW) structures with transverse mode suppression - Google Patents

Surface acoustic wave (SAW) structures with transverse mode suppression Download PDF

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US12143090B2
US12143090B2 US17/452,825 US202117452825A US12143090B2 US 12143090 B2 US12143090 B2 US 12143090B2 US 202117452825 A US202117452825 A US 202117452825A US 12143090 B2 US12143090 B2 US 12143090B2
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finger
saw filter
width
saw
fingers
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US20230133161A1 (en
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Tsuyoshi Yokoyama
Tabito TANAKA
Jun Sung Chun
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Qorvo US Inc
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Qorvo US Inc
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Assigned to QORVO US, INC. reassignment QORVO US, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHUN, JUN SUNG
Priority to CN202211256627.4A priority patent/CN116073783A/en
Priority to EP22202612.2A priority patent/EP4175170A1/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02637Details concerning reflective or coupling arrays
    • H03H9/02685Grating lines having particular arrangements
    • H03H9/02724Comb like grating lines
    • H03H9/02732Bilateral comb like grating lines
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02858Means for compensation or elimination of undesirable effects of wave front distortion
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02881Means for compensation or elimination of undesirable effects of diffraction of wave beam
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/145Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14517Means for weighting
    • H03H9/1452Means for weighting by finger overlap length, apodisation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/145Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14517Means for weighting
    • H03H9/14529Distributed tap
    • H03H9/14532Series weighting; Transverse weighting
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/145Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14544Transducers of particular shape or position
    • H03H9/1457Transducers having different finger widths
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6423Means for obtaining a particular transfer characteristic
    • H03H9/6433Coupled resonator filters
    • H03H9/644Coupled resonator filters having two acoustic tracks
    • H03H9/6443Coupled resonator filters having two acoustic tracks being acoustically coupled
    • H03H9/6453Coupled resonator filters having two acoustic tracks being acoustically coupled by at least an interdigital transducer overlapping both tracks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02157Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness

Definitions

  • the technology of the disclosure relates generally to surface acoustic waves and ways to reduce transverse modes spurious around resonance frequencies.
  • SAW devices such as SAW resonators and SAW filters
  • RF filters radio frequency
  • SAW filters are commonly used in Second Generation (2G), Third Generation (3G), and Fourth Generation (4G) wireless transceiver front ends, duplexers, and receive filters.
  • SAW filters are commonly used in Second Generation (2G), Third Generation (3G), and Fourth Generation (4G) wireless transceiver front ends, duplexers, and receive filters.
  • 2G Second Generation
  • 3G Third Generation
  • 4G Fourth Generation
  • the widespread use of SAW filters is due to, at least in part, the fact that SAW filters exhibit low insertion loss with good rejection, can achieve broad bandwidths, and are a small fraction of the size of traditional cavity and ceramic filters.
  • the performance of a SAW device is an important parameter that can impact the overall performance of a system. In this regard, there is a need for a high-performance SAW device.
  • One such solution is a guided SAW device.
  • Guided SAW devices i.e., SAW devices having a guided SAW structure
  • SAW devices having a guided SAW structure have a layered substrate where a layer of piezoelectric material, which is referred to here as a piezoelectric layer, is bonded or deposited on (e.g., directly on) the surface of a support, or carrier, substrate.
  • guided SAW devices have an improved quality factor (Q), an improved electromechanical coupling factor (K2), and an improved Temperature Coefficient of Frequency (TCF).
  • Q quality factor
  • K2 electromechanical coupling factor
  • TCF Temperature Coefficient of Frequency
  • unwanted spurious modes are typically generated in a guided SAW structure, which hinders a practical use of a guided SAW device.
  • spurious modes are generated above the resonance frequency of the guided SAW device and, as a result, out-of-band rejection specifications may not be satisfied. Accordingly, there is still a need for improved performance from SAW devices.
  • SAW surface acoustic wave
  • exemplary aspects of the present disclosure provide digits or fingers with broad interior terminal end shapes. By providing such shapes, spurious modes above the resonance frequency of the SAW structure are suppressed, thereby providing desired out-of-band rejection that helps satisfy design criteria such as keeping a higher quality factor (Q) value, a higher electromechanical coupling factor (K2) value, and better Temperature Coefficient of Frequency (TCF).
  • Q quality factor
  • K2 electromechanical coupling factor
  • TCF Temperature Coefficient of Frequency
  • a SAW filter comprises a first interdigitated electrode comprising a first finger.
  • the first finger has a first width along a longitudinal axis of the first finger for a first length and a second width along the longitudinal axis of the first finger for a second length at a terminal end portion of the first finger.
  • the SAW filter also comprises a second interdigitated electrode.
  • FIG. 1 A is a side elevational view of a guided surface acoustic wave (SAW) structure
  • FIG. 1 B is a top plan view of the guided SAW structure of FIG. 1 B with apodization of the interdigital structure;
  • FIG. 2 provides performance graphs for the guided SAW structure of FIGS. 1 A and 1 B with transverse modes above the resonant frequency highlighted;
  • FIG. 3 A illustrates a guided SAW structure with transverse mode suppression according to an exemplary aspect of the present disclosure
  • FIG. 3 B illustrates an exemplary finger end used on the interdigital structure to facilitate transverse mode suppression
  • FIG. 4 provides performance graphs for the guided SAW structure with wide finger ends of FIGS. 3 A and 3 B highlighting the suppressed transverse modes
  • FIGS. 5 A and 5 B illustrate how changing a width of a finger end relative to the finger shaft affects a magnitude of a transverse mode
  • FIG. 5 C illustrates how changing the area of a finger end affects a magnitude of a transverse mode
  • FIGS. 6 A and 6 B illustrate how changing a gap between finger ends affects a magnitude of a transverse mode
  • FIGS. 7 A and 7 B illustrate how changing a crossing gap between fingers affects a magnitude of a transverse mode
  • FIG. 8 illustrates various alternate finger ends
  • FIGS. 9 A and 9 B illustrate how changing a substrate thickness may affect a magnitude of a transverse mode
  • FIG. 10 illustrates a top plan view of an alternate guided SAW structure with a chirped wave apodization.
  • SAW surface acoustic wave
  • exemplary aspects of the present disclosure provide digits or fingers with broad interior terminal end shapes. By providing such shapes, spurious modes above the resonance frequency of the SAW structure are suppressed, thereby providing desired out-of-band rejection that helps satisfy design criteria such as keeping a higher quality factor (Q) value, a higher electromechanical coupling factor (K2) value, and better Temperature Coefficient of Frequency (TCF).
  • Q quality factor
  • K2 electromechanical coupling factor
  • TCF Temperature Coefficient of Frequency
  • FIGS. 1 A and 1 B illustrate a conventional guided SAW structure 100 having a support substrate 102 on which a piezoelectric layer 104 is positioned.
  • Interdigitated electrodes 106 , 108 are positioned on the piezoelectric layer 104 as better seen in FIG. 1 B .
  • the interdigitated electrodes 106 , 108 form an interdigital transducer (IDT) 110 with optional reflectors 112 , 114 .
  • IDT interdigital transducer
  • one of the interdigitated electrodes 106 , 108 may be a dummy electrode.
  • each interdigitated electrode 106 , 108 includes a respective plurality of fingers 106 A, 108 A that are aligned with one another and are separated by gaps 116 .
  • the alignment and presence of the gaps 116 provide apodization of the IDT 110 .
  • FIG. 2 provides various graphs 200 A- 200 D showing performance of the guided SAW structure 100 against frequency, and particularly shows a resonance frequency f, with transverse modes proximate the resonance frequency highlighted.
  • apodization does some work at suppressing the transverse modes, it is insufficient for some purposes.
  • exemplary aspects of the present disclosure provide a guided SAW filter 300 that includes a first interdigitated electrode 302 and a second interdigitated electrode 304 that are apodized.
  • the first interdigitated electrode 302 has a plurality of fingers 306 ( 1 )- 306 (N) with an exemplary finger 306 (X) shown in FIG. 3 B .
  • Each of the fingers 306 ( 1 )- 306 (N) has a first width W1 along a longitudinal axis 308 of the fingers 306 ( 1 )- 306 (N).
  • the first width W1 is provided along this longitudinal axis 308 for a first length defined by the distance between a lateral bar 310 and a terminal end portion 312 ( 1 )- 312 (N) of the finger 306 ( 1 )- 306 (N).
  • the terminal end portion 312 ( 1 )- 312 (N) of the finger 306 ( 1 )- 306 (N) has a second width W2 along the longitudinal axis 308 for a second length L (see also FIG. 5 A ).
  • the apodization is perpendicular to the longitudinal axis 308 and may be described as being along a length direction of the SAW structure 100 . Further, the apodization is formed in a wave pattern and may follow a sine or cosine wave pattern.
  • the second interdigitated electrode 304 has a plurality of fingers 314 ( 1 )- 314 (N) with an exemplary finger 314 (X) shown in FIG. 3 B .
  • Each of the fingers 314 ( 1 )- 314 (N) has a first width W1 along the longitudinal axis 308 .
  • the first width W1 is provided along this longitudinal axis 308 for a length defined by the distance between a lateral bar 316 and a terminal end portion 318 ( 1 )- 318 (N) of the finger 314 ( 1 )- 314 (N).
  • the terminal end portion 318 ( 1 )- 318 (N) of the finger 314 ( 1 )- 314 (N) has a second width W2 along the longitudinal axis 308 for a second length L (see also FIG. 5 A ).
  • both the fingers 306 ( 1 )- 306 (N) and the fingers 314 ( 1 )- 314 (N) include the wider terminal end portions 312 ( 1 )- 312 (N), 318 ( 1 )- 318 (N).
  • the disclosure is not so limited and only one or the other of the fingers 306 ( 1 )- 306 (N) or 314 ( 1 )- 314 (N) may include the wider terminal end portions 312 ( 1 )- 312 (N), 318 ( 1 )- 318 (N).
  • the widths W1 of the fingers 306 ( 1 )- 306 (N) are the same as the widths W1 of the fingers 314 ( 1 )- 314 (N), but such identity is not required by the present disclosure and the W1 of fingers 306 ( 1 )- 306 (N) may differ from the W1 of the fingers 314 ( 1 )- 314 (N). Still further, even if both fingers 306 ( 1 )- 306 (N) and 314 ( 1 )- 314 (N) have the wider terminal end portions 312 ( 1 )- 312 (N), 318 ( 1 )- 318 (N), they do not necessarily have to have the same widths W2 relative to each other.
  • FIG. 4 provides graphs 400 A- 400 C illustrating how the guided SAW filter 300 suppresses the transverse modes.
  • the wave amplitude of the apodization is 2.4 ⁇ .
  • the aperture 320 , length 322 , and IDT length/wave were set to 20 ⁇ , 100 ⁇ , and 1 ⁇ , respectively.
  • is an interdigital transducer (IDT) period of the SAW filter 300 .
  • FIG. 5 A is provided which merely reillustrates an exemplary finger 306 (X).
  • FIGS. 5 B and 5 C illustrate the ramifications of two parameter variations.
  • FIG. 5 B illustrates how changing the ratio of W2/W1 will affect how much the transverse mode is suppressed while
  • FIG. 5 C illustrates how changing L and the area of the terminal end portion 312 (X) will affect how much the transverse mode is suppressed
  • FIG. 5 B shows graphs 500 A and 500 B with L set to 0.12 and various W2/W1 ratios. Specifically, ratios of 1.2, 1.8, and 2.2 are illustrated, with the transverse mode being increasing increasingly suppressed as the W2/W1 ratio increases. However, if the W2/W1 ratio is too large (i.e., W2 is too wide), there may be bridging to an adjacent finger, so the W2/W1 ratio may have a practical limit of three (3) or less.
  • FIG. 5 C illustrates graphs 500 C, 500 D showing what happens to transverse mode suppression with changes to L, while holding W2/W1 constant.
  • L is varied between 0.1 ⁇ , 0.15 ⁇ , and 0.25 ⁇ .
  • the data suggests that the greatest transverse mode suppression occurs around 0.1 ⁇ 2 . Areas larger than this show that the magnitude of the transverse mode slowly increases, and an area greater than approximately 0.7 ⁇ 2 will obviate any transverse mode suppression. Approximately as used herein means within five percent.
  • a gap 600 illustrated in FIG. 6 A between the terminal end portions (e.g., end portions 312 (X) and 318 (X)) of the fingers 306 (X), 314 (X) may be varied to achieve varied results.
  • FIG. 6 B shows the results of such variation in gap. Specifically, graphs 602 A, 602 B show how changing the gap from 0.1023 ⁇ , through 0.1136 ⁇ , to 0.1364 ⁇ while keeping L and W/W2 constant affects the magnitude of the transverse mode. If the gap 600 is 0.24 ⁇ or less, the wider terminal end portions of the present disclosure provide more effective transverse mode suppression than narrowing the gap of a conventional finger. Note that if the gap is too narrow, it may be difficult to manufacture with current technologies, and accordingly, a gap 600 of more than approximately 0.1 micrometers may be used.
  • Still another parameter may be a crossing width 700 illustrated in FIG. 7 A .
  • FIG. 7 B illustrates graphs 702 A, 702 B, and 702 C showing the impact on the transverse mode suppression created by variations in the crossing width 700 .
  • a crossing width of 5 ⁇ is shown in graph 702 A and a crossing width 700 of 102 is shown in graph 702 B.
  • the effect of the wide terminal end portions 312 ( 1 )- 312 (N) and 318 ( 1 )- 318 (N) is greater as the crossing width 700 is smaller.
  • the crossing width 700 is too narrow, the distance between the upper and lower apodization regions are too close, so a crossing width 700 of at least approximately 1 ⁇ is suggested.
  • FIGS. 3 A, 5 A, 6 A, and 7 A suggest that the terminal end portions 312 ( 1 )- 312 (N) and 318 ( 1 )- 318 (N) be rectilinear with right angles at the corners, the present disclosure is not so limited.
  • FIG. 8 provides exemplary alternate terminal end portions 800 A- 800 D where terminal end portion 800 A is rectilinear as previously illustrated, but terminal end portions 800 B- 800 D include rounded corner portions 802 B, 802 C, 802 D.
  • the precise radius of curvature and the precise angle of slope 804 C, 804 D is not central to the present disclosure and may be varied without departing from the scope of the present disclosure. Likewise, minor variations that result from process variations during manufacture are intended to be included within the present disclosure.
  • FIGS. 9 A and 9 B show the impact variations on the thickness (LT) of the piezoelectric material 900 that sits between the interdigitated electrodes 302 , 304 and a silicon substrate 904 have on transverse mode suppression.
  • the piezoelectric material 900 may be, for example, lithium tantalite or lithium niobite.
  • the substrate may alternatively be sapphire, spinel, quartz, or other ceramics.
  • graphs 906 A and 906 B in FIG. 9 B the magnitude of a transverse mode may depend on the thickness of the piezoelectric material 900 .
  • the piezoelectric material 900 is less than 5 ⁇ , transverse modes are seen, and using the wide terminal end portions of the present disclosure may be useful when suppressing transverse modes when LT is less than approximately 5 ⁇ .
  • Still another possible variation is to chirp the wave apodization as illustrated in FIG. 10 . That is, some portion 1000 of a wave 1002 has a different period than the rest of the wave 1002 .
  • the chirped wave is symmetric about a vertical axis to a length direction 1004 of a SAW filter 1006 .
  • the surface acoustic wave structures with transverse mode suppression may be provided in or integrated into any processor-based device.
  • Examples include a set top box, an entertainment unit, a navigation device, a communications device, a fixed location data unit, a mobile location data unit, a global positioning system (GPS) device, a mobile phone, a cellular phone, a smart phone, a session initiation protocol (SIP) phone, a tablet, a phablet, a server, a computer, a portable computer, a mobile computing device, a wearable computing device (e.g., a smart watch, a health or fitness tracker, eyewear, etc.), a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, a
  • GPS global positioning system

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  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

Surface acoustic wave (SAW) structures with transverse mode suppression are disclosed. In one aspect, the SAW structure provides digits or fingers with broad interior terminal end shapes. By providing such shapes spurious modes above the resonance frequency of the SAW are suppressed thereby providing desired out of band rejection that helps satisfy design criteria such as keeping a higher Q value, a higher K2 value and better Temperature Coefficient of Frequency (TCF).

Description

BACKGROUND I. Field of the Disclosure
The technology of the disclosure relates generally to surface acoustic waves and ways to reduce transverse modes spurious around resonance frequencies.
II. BACKGROUND
Surface acoustic wave (SAW) devices, such as SAW resonators and SAW filters, are used in many applications such as radio frequency (RF) filters. For example, SAW filters are commonly used in Second Generation (2G), Third Generation (3G), and Fourth Generation (4G) wireless transceiver front ends, duplexers, and receive filters. The widespread use of SAW filters is due to, at least in part, the fact that SAW filters exhibit low insertion loss with good rejection, can achieve broad bandwidths, and are a small fraction of the size of traditional cavity and ceramic filters. As with any electronic device, the performance of a SAW device is an important parameter that can impact the overall performance of a system. In this regard, there is a need for a high-performance SAW device. One such solution is a guided SAW device.
Guided SAW devices (i.e., SAW devices having a guided SAW structure) have a layered substrate where a layer of piezoelectric material, which is referred to here as a piezoelectric layer, is bonded or deposited on (e.g., directly on) the surface of a support, or carrier, substrate. As compared to conventional SAW devices, guided SAW devices have an improved quality factor (Q), an improved electromechanical coupling factor (K2), and an improved Temperature Coefficient of Frequency (TCF). However, unwanted spurious modes are typically generated in a guided SAW structure, which hinders a practical use of a guided SAW device. In particular, in a guided SAW device, spurious modes are generated above the resonance frequency of the guided SAW device and, as a result, out-of-band rejection specifications may not be satisfied. Accordingly, there is still a need for improved performance from SAW devices.
SUMMARY
Aspects disclosed in the detailed description include surface acoustic wave (SAW) structures with transverse mode suppression. In particular, exemplary aspects of the present disclosure provide digits or fingers with broad interior terminal end shapes. By providing such shapes, spurious modes above the resonance frequency of the SAW structure are suppressed, thereby providing desired out-of-band rejection that helps satisfy design criteria such as keeping a higher quality factor (Q) value, a higher electromechanical coupling factor (K2) value, and better Temperature Coefficient of Frequency (TCF).
In this regard in one aspect, a SAW filter is disclosed. The SAW filter comprises a first interdigitated electrode comprising a first finger. The first finger has a first width along a longitudinal axis of the first finger for a first length and a second width along the longitudinal axis of the first finger for a second length at a terminal end portion of the first finger. The SAW filter also comprises a second interdigitated electrode.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1A is a side elevational view of a guided surface acoustic wave (SAW) structure;
FIG. 1B is a top plan view of the guided SAW structure of FIG. 1B with apodization of the interdigital structure;
FIG. 2 provides performance graphs for the guided SAW structure of FIGS. 1A and 1B with transverse modes above the resonant frequency highlighted;
FIG. 3A illustrates a guided SAW structure with transverse mode suppression according to an exemplary aspect of the present disclosure;
FIG. 3B illustrates an exemplary finger end used on the interdigital structure to facilitate transverse mode suppression;
FIG. 4 provides performance graphs for the guided SAW structure with wide finger ends of FIGS. 3A and 3B highlighting the suppressed transverse modes;
FIGS. 5A and 5B illustrate how changing a width of a finger end relative to the finger shaft affects a magnitude of a transverse mode;
FIG. 5C illustrates how changing the area of a finger end affects a magnitude of a transverse mode;
FIGS. 6A and 6B illustrate how changing a gap between finger ends affects a magnitude of a transverse mode;
FIGS. 7A and 7B illustrate how changing a crossing gap between fingers affects a magnitude of a transverse mode;
FIG. 8 illustrates various alternate finger ends;
FIGS. 9A and 9B illustrate how changing a substrate thickness may affect a magnitude of a transverse mode; and
FIG. 10 illustrates a top plan view of an alternate guided SAW structure with a chirped wave apodization.
DETAILED DESCRIPTION
With reference now to the drawing figures, several exemplary aspects of the present disclosure are described. The word “exemplary” is used herein to mean “serving as an example, instance, or illustration.” Any aspect described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other aspects.
Aspects disclosed in the detailed description include surface acoustic wave (SAW) structures with transverse mode suppression. In particular, exemplary aspects of the present disclosure provide digits or fingers with broad interior terminal end shapes. By providing such shapes, spurious modes above the resonance frequency of the SAW structure are suppressed, thereby providing desired out-of-band rejection that helps satisfy design criteria such as keeping a higher quality factor (Q) value, a higher electromechanical coupling factor (K2) value, and better Temperature Coefficient of Frequency (TCF).
FIGS. 1A and 1B illustrate a conventional guided SAW structure 100 having a support substrate 102 on which a piezoelectric layer 104 is positioned. Interdigitated electrodes 106, 108 are positioned on the piezoelectric layer 104 as better seen in FIG. 1B. The interdigitated electrodes 106, 108 form an interdigital transducer (IDT) 110 with optional reflectors 112, 114. Further, one of the interdigitated electrodes 106, 108 (e.g., electrode 108) may be a dummy electrode.
With continued reference to FIG. 1B, each interdigitated electrode 106, 108 includes a respective plurality of fingers 106A, 108A that are aligned with one another and are separated by gaps 116. The alignment and presence of the gaps 116 provide apodization of the IDT 110.
FIG. 2 provides various graphs 200A-200D showing performance of the guided SAW structure 100 against frequency, and particularly shows a resonance frequency f, with transverse modes proximate the resonance frequency highlighted. As is readily apparent, while the apodization does some work at suppressing the transverse modes, it is insufficient for some purposes.
As illustrated in FIGS. 3A and 3B, exemplary aspects of the present disclosure provide a guided SAW filter 300 that includes a first interdigitated electrode 302 and a second interdigitated electrode 304 that are apodized. The first interdigitated electrode 302 has a plurality of fingers 306(1)-306(N) with an exemplary finger 306(X) shown in FIG. 3B. Each of the fingers 306(1)-306(N) has a first width W1 along a longitudinal axis 308 of the fingers 306(1)-306(N). The first width W1 is provided along this longitudinal axis 308 for a first length defined by the distance between a lateral bar 310 and a terminal end portion 312(1)-312(N) of the finger 306(1)-306(N). The terminal end portion 312(1)-312(N) of the finger 306(1)-306(N) has a second width W2 along the longitudinal axis 308 for a second length L (see also FIG. 5A). The apodization is perpendicular to the longitudinal axis 308 and may be described as being along a length direction of the SAW structure 100. Further, the apodization is formed in a wave pattern and may follow a sine or cosine wave pattern.
Similarly, the second interdigitated electrode 304 has a plurality of fingers 314(1)-314(N) with an exemplary finger 314(X) shown in FIG. 3B. Each of the fingers 314(1)-314(N) has a first width W1 along the longitudinal axis 308. The first width W1 is provided along this longitudinal axis 308 for a length defined by the distance between a lateral bar 316 and a terminal end portion 318(1)-318(N) of the finger 314(1)-314(N). The terminal end portion 318(1)-318(N) of the finger 314(1)-314(N) has a second width W2 along the longitudinal axis 308 for a second length L (see also FIG. 5A).
Note that, as illustrated, both the fingers 306(1)-306(N) and the fingers 314(1)-314(N) include the wider terminal end portions 312(1)-312(N), 318(1)-318(N). However, the disclosure is not so limited and only one or the other of the fingers 306(1)-306(N) or 314(1)-314(N) may include the wider terminal end portions 312(1)-312(N), 318(1)-318(N). Note further that, as illustrated, the widths W1 of the fingers 306(1)-306(N) are the same as the widths W1 of the fingers 314(1)-314(N), but such identity is not required by the present disclosure and the W1 of fingers 306(1)-306(N) may differ from the W1 of the fingers 314(1)-314(N). Still further, even if both fingers 306(1)-306(N) and 314(1)-314(N) have the wider terminal end portions 312(1)-312(N), 318(1)-318(N), they do not necessarily have to have the same widths W2 relative to each other.
FIG. 4 provides graphs 400A-400C illustrating how the guided SAW filter 300 suppresses the transverse modes. For reference, the wave amplitude of the apodization is 2.4λ. The aperture 320, length 322, and IDT length/wave were set to 20λ, 100λ, and 1λ, respectively. By using the wide finger ends, the transverse modes can be significantly suppressed, and Q also improves. λ is an interdigital transducer (IDT) period of the SAW filter 300.
There are a number of parameters associated with the finger ends which may be optimized to achieve desired transverse mode suppression. FIG. 5A is provided which merely reillustrates an exemplary finger 306(X). FIGS. 5B and 5C illustrate the ramifications of two parameter variations. FIG. 5B illustrates how changing the ratio of W2/W1 will affect how much the transverse mode is suppressed while FIG. 5C illustrates how changing L and the area of the terminal end portion 312(X) will affect how much the transverse mode is suppressed
In this regard, FIG. 5B shows graphs 500A and 500B with L set to 0.12 and various W2/W1 ratios. Specifically, ratios of 1.2, 1.8, and 2.2 are illustrated, with the transverse mode being increasing increasingly suppressed as the W2/W1 ratio increases. However, if the W2/W1 ratio is too large (i.e., W2 is too wide), there may be bridging to an adjacent finger, so the W2/W1 ratio may have a practical limit of three (3) or less.
FIG. 5C illustrates graphs 500C, 500D showing what happens to transverse mode suppression with changes to L, while holding W2/W1 constant. Specifically, L is varied between 0.1λ, 0.15λ, and 0.25λ. The data suggests that the greatest transverse mode suppression occurs around 0.1λ2. Areas larger than this show that the magnitude of the transverse mode slowly increases, and an area greater than approximately 0.7λ2 will obviate any transverse mode suppression. Approximately as used herein means within five percent.
Similarly, a gap 600 illustrated in FIG. 6A between the terminal end portions (e.g., end portions 312(X) and 318(X)) of the fingers 306(X), 314(X) may be varied to achieve varied results. FIG. 6B shows the results of such variation in gap. Specifically, graphs 602A, 602B show how changing the gap from 0.1023λ, through 0.1136λ, to 0.1364λ while keeping L and W/W2 constant affects the magnitude of the transverse mode. If the gap 600 is 0.24λ or less, the wider terminal end portions of the present disclosure provide more effective transverse mode suppression than narrowing the gap of a conventional finger. Note that if the gap is too narrow, it may be difficult to manufacture with current technologies, and accordingly, a gap 600 of more than approximately 0.1 micrometers may be used.
Still another parameter may be a crossing width 700 illustrated in FIG. 7A. FIG. 7B illustrates graphs 702A, 702B, and 702C showing the impact on the transverse mode suppression created by variations in the crossing width 700. Specifically, a crossing width of 5λ is shown in graph 702A and a crossing width 700 of 102 is shown in graph 702B. The effect of the wide terminal end portions 312(1)-312(N) and 318(1)-318(N) is greater as the crossing width 700 is smaller. However, if the crossing width 700 is too narrow, the distance between the upper and lower apodization regions are too close, so a crossing width 700 of at least approximately 1λ is suggested.
While FIGS. 3A, 5A, 6A, and 7A suggest that the terminal end portions 312(1)-312(N) and 318(1)-318(N) be rectilinear with right angles at the corners, the present disclosure is not so limited. FIG. 8 provides exemplary alternate terminal end portions 800A-800D where terminal end portion 800A is rectilinear as previously illustrated, but terminal end portions 800B-800D include rounded corner portions 802B, 802C, 802D. The precise radius of curvature and the precise angle of slope 804C, 804D is not central to the present disclosure and may be varied without departing from the scope of the present disclosure. Likewise, minor variations that result from process variations during manufacture are intended to be included within the present disclosure.
FIGS. 9A and 9B show the impact variations on the thickness (LT) of the piezoelectric material 900 that sits between the interdigitated electrodes 302, 304 and a silicon substrate 904 have on transverse mode suppression. It should be appreciated that the piezoelectric material 900 may be, for example, lithium tantalite or lithium niobite. Likewise, while described as a silicon substrate 904, the substrate may alternatively be sapphire, spinel, quartz, or other ceramics. As shown by graphs 906A and 906B in FIG. 9B, the magnitude of a transverse mode may depend on the thickness of the piezoelectric material 900. When the piezoelectric material 900 is less than 5λ, transverse modes are seen, and using the wide terminal end portions of the present disclosure may be useful when suppressing transverse modes when LT is less than approximately 5λ.
Still another possible variation is to chirp the wave apodization as illustrated in FIG. 10 . That is, some portion 1000 of a wave 1002 has a different period than the rest of the wave 1002. In an exemplary aspect, the chirped wave is symmetric about a vertical axis to a length direction 1004 of a SAW filter 1006.
The surface acoustic wave structures with transverse mode suppression according to aspects disclosed herein may be provided in or integrated into any processor-based device. Examples, without limitation, include a set top box, an entertainment unit, a navigation device, a communications device, a fixed location data unit, a mobile location data unit, a global positioning system (GPS) device, a mobile phone, a cellular phone, a smart phone, a session initiation protocol (SIP) phone, a tablet, a phablet, a server, a computer, a portable computer, a mobile computing device, a wearable computing device (e.g., a smart watch, a health or fitness tracker, eyewear, etc.), a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, a portable digital video player, an automobile, a vehicle component, avionics systems, a drone, and a multicopter.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (19)

What is claimed is:
1. A surface acoustic wave (SAW) filter comprising:
a first interdigitated electrode consisting of a first plurality of fingers, each finger of the first plurality comprising:
a substantially uniform first width along a longitudinal axis of the finger for a first length and a second width along the longitudinal axis of the finger for a second length at a terminal end portion of the finger; and
a second interdigitated electrode consisting of a second plurality of second fingers, each second finger of the second plurality comprising:
a substantially uniform third width along a second longitudinal axis of the second finger for a third length and a fourth width along the second longitudinal axis of the second finger for a fourth length at a second terminal end of the second finger;
wherein each of the first plurality of fingers has a respective opposite one of the second plurality of second fingers, and each pair of first finger and second finger has a gap therebetween.
2. The SAW filter of claim 1, wherein the first interdigitated electrode is apodized in a length direction of the SAW filter.
3. The SAW filter of claim 1, wherein the first interdigitated electrode is apodized with a wave pattern in a length direction of the SAW filter.
4. The SAW filter of claim 1, wherein the second width is greater than the first width but less than three times the first width.
5. The SAW filter of claim 1, wherein the second width is greater than the first width by less than 2.5 times the first width.
6. The SAW filter of claim 1, wherein the terminal end portion of each of the fingers has an area corresponding to the second width multiplied by the second length and this area is less than approximately 0.7λ2, where λ is an interdigital transducer (IDT) period of the SAW filter.
7. The SAW filter of claim 1, wherein the terminal end portion of each of the fingers has an area corresponding to the second width multiplied by the second length and this area is less than approximately 0.3λ2, where λ is an interdigital transducer (IDT) period of the SAW filter.
8. The SAW filter of claim 1, wherein the gap is between approximately 0.1 micrometers and 0.24λ, where λ is an interdigital transducer (IDT) period of the SAW filter.
9. The SAW filter of claim 1, wherein the gap is between approximately 0.1 micrometers and 0.14λ, where λ is an interdigital transducer (IDT) period of the SAW filter.
10. The SAW filter of claim 1, wherein there is a crossing width defined by the first finger and the second finger.
11. The SAW filter of claim 10, wherein the crossing width is greater than 52, where λ is an interdigital transducer (IDT) period of the SAW filter.
12. The SAW filter of claim 10, wherein the crossing width is greater than 5λ, where λ is an interdigital transducer (IDT) period of the SAW filter.
13. The SAW filter of claim 1, wherein the terminal end portion comprises a rounded corner portion.
14. The SAW filter of claim 1, further comprising a piezoelectric layer, the first interdigitated electrode and the second interdigitated electrode positioned on the piezoelectric layer.
15. The SAW filter of claim 14, wherein the piezoelectric layer comprises either lithium tantalite or lithium niobite.
16. The SAW filter of claim 14, further comprising a support substrate, wherein the piezoelectric layer is bonded on the support substrate.
17. The SAW filter of claim 14, wherein the piezoelectric layer has a thickness less than 5λ, where λ is an interdigital transducer (IDT) period of the SAW filter.
18. The SAW filter of claim 16, further comprising a silicon dioxide layer between the piezoelectric layer and the support substrate.
19. A mobile communication device comprising:
a transmitter comprising a surface acoustic wave (SAW) filter comprising:
a first interdigitated electrode consisting of a first plurality of fingers, each finger of the first plurality comprising:
a substantially uniform first width along a longitudinal axis of the finger for a first length and a second width along the longitudinal axis of the finger for a second length at a terminal end portion of the finger; and
a second interdigitated electrode consisting of a second plurality of second fingers, each second finger of the second plurality comprising:
a substantially uniform third width along a second longitudinal axis of the second finger for a third length and a fourth width along the second longitudinal axis of the second finger for a fourth length at a second terminal end of the second finger;
wherein each of the first plurality of fingers has a respective opposite one of the second plurality of second fingers and each pair of first finger and second finger has a gap therebetween.
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Citations (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791236B1 (en) 2000-10-11 2004-09-14 Yuri Abramov Method utilizing the saw velocity dispersion effect for weighting by shaping the electrode fingers of a saw interdigital transducer and apparatus produced thereby
US20040247153A1 (en) 2001-07-24 2004-12-09 Werner Ruile Converter for surface waves with improved suppression of interfering excitation
US20070046400A1 (en) 2005-08-23 2007-03-01 Fujitsu Media Devices Limited Surface acoustic wave apparatus
US20080309192A1 (en) 2006-03-17 2008-12-18 Murata Manufacturing Co., Ltd. Acoustic wave resonator
US7479855B2 (en) * 2006-09-22 2009-01-20 Murata Manufacturing Co., Ltd. Longitudinally-coupled-resonator-type elastic wave filter device
US7522021B2 (en) 2005-07-06 2009-04-21 Fujitsu Media Devices Limited Surface acoustic wave apparatus
US7576471B1 (en) * 2007-09-28 2009-08-18 Triquint Semiconductor, Inc. SAW filter operable in a piston mode
US20090295507A1 (en) 2007-03-27 2009-12-03 Murata Manufacturing Co., Ltd. Acoustic wave element
US7800464B2 (en) 2007-04-16 2010-09-21 Fujitsu Media Devices Limited Surface acoustic wave device and duplexer
US7939989B2 (en) * 2009-09-22 2011-05-10 Triquint Semiconductor, Inc. Piston mode acoustic wave device and method providing a high coupling factor
US8294331B2 (en) * 2009-09-22 2012-10-23 Triquint Semiconductor, Inc. Acoustic wave guide device and method for minimizing trimming effects and piston mode instabilities
US9350320B2 (en) * 2011-03-28 2016-05-24 Kyocera Corporation Acoustic wave element and acoustic wave device using same
US20170033765A1 (en) 2015-07-29 2017-02-02 Taiyo Yuden Co., Ltd. Acoustic wave device and module
US9673779B2 (en) * 2010-01-25 2017-06-06 Qualcomm Incorporated Electroacoustic transducer having reduced losses due to transverse emission and improved performance due to suppression of transverse modes
US9712139B2 (en) * 2013-05-29 2017-07-18 Murata Manufacturing Co., Ltd. Elastic wave filter device
US20170222618A1 (en) 2016-01-28 2017-08-03 Triquint Semiconductor, Inc. Guided surface acoustic wave device providing spurious mode rejection
US10009009B2 (en) * 2013-05-29 2018-06-26 Murata Manufacturing Co., Ltd. Elastic wave device including electrode fingers with elongated sections
US10171061B2 (en) * 2014-11-28 2019-01-01 Murata Manufacturing Co., Ltd. Elastic wave device
US10382008B2 (en) * 2016-02-24 2019-08-13 Wisol Co., Ltd. Surface acoustic wave device for suppressing transverse mode
WO2019172374A1 (en) 2018-03-09 2019-09-12 株式会社村田製作所 Acoustic wave device
US10418970B2 (en) * 2014-05-26 2019-09-17 Murata Manufacturing Co., Ltd. Elastic wave device and ladder filter
WO2019197086A1 (en) 2018-04-12 2019-10-17 RF360 Europe GmbH Thin film surface acoustic wave transducer with improved characteristics, electroacoustic filter and rf filter
US10454449B2 (en) * 2014-06-23 2019-10-22 Murata Manufacturing Co., Ltd. Elastic wave device
US10840881B2 (en) * 2016-12-28 2020-11-17 Murata Manufacturing Co., Ltd. Longitudinally coupled resonator acoustic wave filter
US10862452B2 (en) * 2016-06-27 2020-12-08 Murata Manufacturing Co., Ltd. Elastic wave filter device
US11165411B2 (en) * 2018-12-03 2021-11-02 Skyworks Solutions, Inc. Acoustic wave device with transverse spurious mode suppression
US11171627B2 (en) 2018-10-01 2021-11-09 Qorvo Us, Inc. Wave apodization for guided SAW resonators
US11177791B2 (en) * 2019-02-01 2021-11-16 Qorvo Us, Inc. High quality factor transducers for surface acoustic wave devices
US11496116B2 (en) * 2017-06-06 2022-11-08 Murata Manufacturing Co., Ltd. Acoustic wave filter device, multiplexer and composite filter device
US11522514B2 (en) * 2017-09-01 2022-12-06 Skyworks Solutions, Inc. Piston mode Lamb wave resonators
US11611325B2 (en) * 2017-12-19 2023-03-21 Murata Manufacturing Co., Ltd. Acoustic wave device

Patent Citations (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791236B1 (en) 2000-10-11 2004-09-14 Yuri Abramov Method utilizing the saw velocity dispersion effect for weighting by shaping the electrode fingers of a saw interdigital transducer and apparatus produced thereby
US20040247153A1 (en) 2001-07-24 2004-12-09 Werner Ruile Converter for surface waves with improved suppression of interfering excitation
US7522021B2 (en) 2005-07-06 2009-04-21 Fujitsu Media Devices Limited Surface acoustic wave apparatus
US20070046400A1 (en) 2005-08-23 2007-03-01 Fujitsu Media Devices Limited Surface acoustic wave apparatus
US7482896B2 (en) 2005-08-23 2009-01-27 Fujitsu Media Devices Limited Surface acoustic wave apparatus
US20080309192A1 (en) 2006-03-17 2008-12-18 Murata Manufacturing Co., Ltd. Acoustic wave resonator
US7479855B2 (en) * 2006-09-22 2009-01-20 Murata Manufacturing Co., Ltd. Longitudinally-coupled-resonator-type elastic wave filter device
US20090295507A1 (en) 2007-03-27 2009-12-03 Murata Manufacturing Co., Ltd. Acoustic wave element
US7800464B2 (en) 2007-04-16 2010-09-21 Fujitsu Media Devices Limited Surface acoustic wave device and duplexer
US7576471B1 (en) * 2007-09-28 2009-08-18 Triquint Semiconductor, Inc. SAW filter operable in a piston mode
US7939989B2 (en) * 2009-09-22 2011-05-10 Triquint Semiconductor, Inc. Piston mode acoustic wave device and method providing a high coupling factor
US8294331B2 (en) * 2009-09-22 2012-10-23 Triquint Semiconductor, Inc. Acoustic wave guide device and method for minimizing trimming effects and piston mode instabilities
US9673779B2 (en) * 2010-01-25 2017-06-06 Qualcomm Incorporated Electroacoustic transducer having reduced losses due to transverse emission and improved performance due to suppression of transverse modes
US9350320B2 (en) * 2011-03-28 2016-05-24 Kyocera Corporation Acoustic wave element and acoustic wave device using same
US9712139B2 (en) * 2013-05-29 2017-07-18 Murata Manufacturing Co., Ltd. Elastic wave filter device
US10009009B2 (en) * 2013-05-29 2018-06-26 Murata Manufacturing Co., Ltd. Elastic wave device including electrode fingers with elongated sections
US10418970B2 (en) * 2014-05-26 2019-09-17 Murata Manufacturing Co., Ltd. Elastic wave device and ladder filter
US10454449B2 (en) * 2014-06-23 2019-10-22 Murata Manufacturing Co., Ltd. Elastic wave device
US10171061B2 (en) * 2014-11-28 2019-01-01 Murata Manufacturing Co., Ltd. Elastic wave device
US20170033765A1 (en) 2015-07-29 2017-02-02 Taiyo Yuden Co., Ltd. Acoustic wave device and module
US20170222618A1 (en) 2016-01-28 2017-08-03 Triquint Semiconductor, Inc. Guided surface acoustic wave device providing spurious mode rejection
US10382008B2 (en) * 2016-02-24 2019-08-13 Wisol Co., Ltd. Surface acoustic wave device for suppressing transverse mode
US10862452B2 (en) * 2016-06-27 2020-12-08 Murata Manufacturing Co., Ltd. Elastic wave filter device
US10840881B2 (en) * 2016-12-28 2020-11-17 Murata Manufacturing Co., Ltd. Longitudinally coupled resonator acoustic wave filter
US11496116B2 (en) * 2017-06-06 2022-11-08 Murata Manufacturing Co., Ltd. Acoustic wave filter device, multiplexer and composite filter device
US11522514B2 (en) * 2017-09-01 2022-12-06 Skyworks Solutions, Inc. Piston mode Lamb wave resonators
US11611325B2 (en) * 2017-12-19 2023-03-21 Murata Manufacturing Co., Ltd. Acoustic wave device
WO2019172374A1 (en) 2018-03-09 2019-09-12 株式会社村田製作所 Acoustic wave device
WO2019197086A1 (en) 2018-04-12 2019-10-17 RF360 Europe GmbH Thin film surface acoustic wave transducer with improved characteristics, electroacoustic filter and rf filter
US11171627B2 (en) 2018-10-01 2021-11-09 Qorvo Us, Inc. Wave apodization for guided SAW resonators
US11165411B2 (en) * 2018-12-03 2021-11-02 Skyworks Solutions, Inc. Acoustic wave device with transverse spurious mode suppression
US11177791B2 (en) * 2019-02-01 2021-11-16 Qorvo Us, Inc. High quality factor transducers for surface acoustic wave devices

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
Applicant-Initiated Interview Summary for U.S. Appl. No. 16/400,363, mailed Feb. 23, 2021, 2 pages.
Extended European Search Report for European Patent Application No. 22202612.2, mailed Mar. 23, 2023, 9 pages.
Final Office Action for U.S. Appl. No. 16/400,363, mailed Dec. 10, 2020, 14 pages.
Inoue, Shogo, et al., "Low-Loss SAW Filter on Li2B4O7 using Novel-Shape Apodized Structure for 1 GHz RF-ID System," IEEE Ultrasonics Symposium, Sep. 2005, pp. 1036-1041.
Non-Final Office Action for U.S. Appl. No. 16/400,363, mailed Jul. 9, 2020, 12 pages.
Non-Final Office Action for U.S. Appl. No. 17/521,316, mailed Feb. 1, 2024, 15 pages.
Notice of Allowance for U.S. Appl. No. 16/400,363, mailed Jul. 14, 2021, 7 pages.
Notice of Allowance for U.S. Appl. No. 17/521,316, mailed May 20, 2024, 7 pages.

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