US11749965B2 - Transistor for emitting laser with a fixed frequency - Google Patents

Transistor for emitting laser with a fixed frequency Download PDF

Info

Publication number
US11749965B2
US11749965B2 US16/928,000 US202016928000A US11749965B2 US 11749965 B2 US11749965 B2 US 11749965B2 US 202016928000 A US202016928000 A US 202016928000A US 11749965 B2 US11749965 B2 US 11749965B2
Authority
US
United States
Prior art keywords
region
transistor
laser
quantum well
signals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US16/928,000
Other versions
US20220021182A1 (en
Inventor
Chao-Hsin Wu
Chien-Ting Tung
Shu-Wei Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Taiwan University NTU
Original Assignee
National Taiwan University NTU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Taiwan University NTU filed Critical National Taiwan University NTU
Priority to US16/928,000 priority Critical patent/US11749965B2/en
Assigned to NATIONAL TAIWAN UNIVERSITY reassignment NATIONAL TAIWAN UNIVERSITY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, SHU-WEI, TUNG, CHIEN-TING, WU, CHAO-HSIN
Publication of US20220021182A1 publication Critical patent/US20220021182A1/en
Application granted granted Critical
Publication of US11749965B2 publication Critical patent/US11749965B2/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0614—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals

Definitions

  • the present invention relates to a transistor, and particularly to a transistor for emitting laser with a fixed frequency.
  • a system for emitting laser with a fixed frequency usually is composed of an device and a frequency modulator coupled to the device, wherein the device is used for generating laser, and the frequency modulator is used for modulating a frequency of the laser to emit the laser with the fixed frequency.
  • the device is usually a laser diode, and a difference between the laser diode and a light-emitting diode is that there are two parallel optical mirrors in the laser diode, wherein the two parallel optical mirrors form an optical resonator.
  • the optical resonator is used for making light generated in the laser diode oscillate repeatedly in the optical resonator and then emits stable laser.
  • the frequency modulator is usually an electro-absorption modulator, wherein the electro-absorption modulator is a semiconductor, and the electro-absorption modulator is used for modulating the frequency of the laser by voltage.
  • Operational principle of the electro-absorption modulator is based on Franz-Keldysh effect, wherein Franz-Keldysh effect means that absorption spectrum of the electro-absorption modulator can be changed by electric field applied to the electro-absorption modulator. Because the system is composed of the device and the frequency modulator, volume of the system is larger, and loss of the laser generated by the laser diode occurs during the transmission between the device and the frequency modulator. Therefore, how to integrate the system into a single device to overcome the above-mentioned shortcomings of the system becomes an important issue of a designer of the system.
  • An embodiment of the present invention provides a transistor for emitting laser with a fixed frequency.
  • the transistor includes a first region, a second region, at least one quantum well, and a third region.
  • the at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region.
  • the at least one quantum well emits the laser with the fixed frequency.
  • the first region, the second region, and the third region include a first semiconductor material
  • the at least one quantum well includes a second semiconductor material
  • polarity of the first region is identical to polarity of the third region
  • the polarity of the first region is different from polarity of the second region
  • the first semiconductor material is different from the second semiconductor material
  • the second semiconductor material is used for emitting the laser with the fixed frequency, and the second semiconductor material is Aluminum gallium arsenide, or Aluminum gallium indium phosphide, or Indium gallium phosphide or Indium gallium nitride, or Zinc oxide.
  • the first semiconductor material is Gallium arsenide, or Indium gallium phosphide, or Aluminum gallium arsenide, and material of the first region, the second region, and the third region may not be the same at the same time.
  • the two signals when the one of the first region, the second region and the third region receives the two signals, or when the two of the first region, the second region, and the third region receive the two signals respectively, the two signals are used to generate an intrinsic current flowing into the at least one quantum well and generate an intrinsic reverse bias between the second region and the third region, and the intrinsic current and the intrinsic reverse bias correspond to the laser with the fixed frequency.
  • the at least one quantum well emits the laser with the fixed frequency by utilizing current modulation mechanism corresponding to the intrinsic current and voltage modulation mechanism corresponding to the intrinsic reverse bias.
  • the current modulation mechanism changes carrier concentration of the at least one quantum well through the intrinsic current to make the at least one quantum well generate a first laser
  • the voltage modulation mechanism utilizes Franz-Keldysh effect to modulate the first laser to emit the laser with the fixed frequency
  • the two signals are two voltage signals, or two current signals, or one voltage signal and one current signal.
  • the present invention provides the transistor for emitting the laser with the fixed frequency.
  • the transistor makes the at least one quantum well in the transistor emit laser with a fixed frequency by utilizing current modulation mechanism corresponding to an intrinsic current induced by two signals inputted to the transistor and voltage modulation mechanism corresponding to an intrinsic reverse bias induced by the two signals inputted to the transistor. Therefore, compared to the prior art, because the transistor is a single integrated device and capable of emitting the laser with the fixed frequency, the present invention can effectively solve the shortcomings of larger volume and much loss of the prior art.
  • FIG. 1 A is a diagram illustrating a transistor for emitting laser with a fixed frequency according to a first embodiment of the present invention.
  • FIG. 1 B is a diagram illustrating the first region being coupled to first input/output pin, the second region being coupled to second input/output pin, and the third region being coupled to third input/output pin.
  • FIG. 2 is a diagram illustrating an equivalent circuit when the transistor operates according to the first signal and the second signal.
  • FIG. 3 is a diagram illustrating frequency shift of first laser and frequency shift of second laser being opposite.
  • FIG. 4 is a diagram illustrating frequency shift of the laser with the fixed frequency being zero.
  • FIG. 1 A is a diagram illustrating a transistor 100 for emitting laser with a fixed frequency according to a first embodiment of the present invention, wherein the transistor 100 includes a first region 202 , a second region 204 , a quantum well 300 , and a third region 206 , wherein the quantum well 300 is installed in the second region 204 , and the second region 204 is coupled between the first region 202 and the third region 206 .
  • the present invention is not limited to the transistor 100 including the quantum well 300 , that is, the transistor 100 can include multiple quantum wells.
  • the first region 202 is emitter
  • the second region 204 is base
  • the third region 206 is collector.
  • the first region 202 , the second region 204 , and the third region 206 include a first semiconductor material
  • the quantum well 300 include a second semiconductor material, wherein polarity of the first region 202 is identical to polarity of the third region 206 , and the polarity of the first region 202 is different from polarity of the second region 204
  • the first semiconductor material is Gallium arsenide, or Indium gallium phosphide, or Aluminum gallium arsenide
  • material of the first region 202 , the second region 204 , and the third region 206 may not be the same at the same time
  • the second semiconductor material is Aluminum gallium arsenide, or Aluminum gallium indium phosphide, or Indium gallium phosphide, or Indium gallium nitride, or Zinc oxide.
  • the present invention is not limited to the first semiconductor material being Gallium arsenide, or Indium gallium phosphide, or Aluminum gallium arsenide, and the second semiconductor material being Aluminum gallium arsenide, or Aluminum gallium indium phosphide, or Indium gallium phosphide, or Indium gallium nitride, or Zinc oxide.
  • the first region 202 and the third region 206 include N-type semiconductor material
  • the second region 204 includes P-type semiconductor material.
  • the first region 202 and the third region 206 include the P-type semiconductor material
  • the second region 204 includes the N-type semiconductor material.
  • the first region 202 is coupled to a first input/output pin 102
  • the second region 204 is coupled to a second input/output pin 104
  • the third region 206 is coupled to a third input/output pin 106 .
  • the second input/output pin 104 can receive a first signal S 1 and the third input/output pin 106 can receive a second signal S 2 , wherein the first signal S 1 is a current signal and the second signal S 2 is a voltage signal.
  • a first DC (direct current) bias V 1 is coupled between the first input/output pin 102 and the second input/output pin 104
  • a second DC bias V 2 is coupled between the second input/output pin 104 and the third input/output pin 106 .
  • an equivalent circuit can be referred to FIG. 2 when the transistor 100 operates according to the first signal S 1 and the second signal S 2 .
  • the first DC bias V 1 and the second DC bias V 2 can make the transistor 100 operate normally, and the first signal S 1 and the second signal S 2 can make an intrinsic current 130 flow into the quantum well 300 and generate an intrinsic reverse bias V 30 between the second region 204 and the third region 206 (because the transistor 100 has characteristics of an ordinary transistor, the transistor 100 can use internal parasitic circuits to convert the first signal S 1 and the second signal S 2 into the intrinsic current 130 and the intrinsic reverse bias V 30 , wherein the above-mentioned conversion process is called an electrical transfer function).
  • the transistor 100 can make the quantum well 300 emit a fixed frequency laser 302 by current modulation mechanism corresponding to the intrinsic current 130 and voltage modulation mechanism corresponding to the intrinsic reverse bias V 30 .
  • the current modulation mechanism changes carrier concentration of the quantum well 300 through the intrinsic current 130 so that the quantum well 300 generates first laser L 304 (as shown in FIG. 3 ), and the voltage modulation mechanism modulates the first laser L 304 by Franz-Keldysh effect generated by the intrinsic reverse bias V 30 to make the quantum well 300 generate second laser L 306 (as shown in FIG. 3 ), wherein as shown in FIG.
  • frequency shift of the first laser L 304 and frequency shift of the second laser L 306 are opposite, and the first laser L 304 and the second laser L 306 can be regard as the laser of the same source, but they are discussed respectively for convenience of explanation, so the quantum well 300 can finally emit the fixed frequency laser 302 according to the first laser L 304 and the second laser L 306 . Therefore, as shown in FIG. 4 , a frequency of the fixed frequency laser 302 is independent of time, that is, frequency shift of the fixed frequency laser 302 is zero.
  • the first signal S 1 and the second signal S 2 can be two current signals, or two voltage signals, or the first signal S 1 is a voltage signal and the second signal S 2 is a current signal.
  • the first signal S 1 and the second signal S 2 can be received by the first input/output pin 102 , or by the second input/output pin 104 , or by the third input/output pin 106 , or by two of the first input/output pin 102 , second input/output pin 104 , and the third input/output pin 106 , or it can be received by the first input/output pin 102 , the second input/output pin 104 , and the third input/output pin 106 at the same time, and the present invention is not limited to only including the first input/output pin 102 , the second input/output pin 104 , and the third input/output pin 106 .
  • the transistor of the present invention makes the quantum well in the transistor emit the laser with the fixed frequency by utilizing the current modulation mechanism corresponding to the intrinsic current induced by the two signals inputted to the transistor and the voltage modulation mechanism corresponding to the intrinsic reverse bias induced by the two signals inputted to the transistor. Therefore, compared to the prior art, because the transistor is a single integrated device and capable of emitting the laser with the fixed frequency, the present invention can effectively solve the shortcomings of larger volume and much loss of the prior art.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)

Abstract

A transistor for emitting laser with a fixed frequency includes a first region, a second region, at least one quantum well, and a third region. The at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region. When one of the first region, the second region, and the third region receives two signals, or two of the first region, the second region, and the third region receive the two signals respectively, the at least one quantum well emits the laser with the fixed frequency.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to a transistor, and particularly to a transistor for emitting laser with a fixed frequency.
2. Description of the Prior Art
In the prior art, a system for emitting laser with a fixed frequency usually is composed of an device and a frequency modulator coupled to the device, wherein the device is used for generating laser, and the frequency modulator is used for modulating a frequency of the laser to emit the laser with the fixed frequency. The device is usually a laser diode, and a difference between the laser diode and a light-emitting diode is that there are two parallel optical mirrors in the laser diode, wherein the two parallel optical mirrors form an optical resonator. The optical resonator is used for making light generated in the laser diode oscillate repeatedly in the optical resonator and then emits stable laser. The frequency modulator is usually an electro-absorption modulator, wherein the electro-absorption modulator is a semiconductor, and the electro-absorption modulator is used for modulating the frequency of the laser by voltage. Operational principle of the electro-absorption modulator is based on Franz-Keldysh effect, wherein Franz-Keldysh effect means that absorption spectrum of the electro-absorption modulator can be changed by electric field applied to the electro-absorption modulator. Because the system is composed of the device and the frequency modulator, volume of the system is larger, and loss of the laser generated by the laser diode occurs during the transmission between the device and the frequency modulator. Therefore, how to integrate the system into a single device to overcome the above-mentioned shortcomings of the system becomes an important issue of a designer of the system.
SUMMARY OF THE INVENTION
An embodiment of the present invention provides a transistor for emitting laser with a fixed frequency. The transistor includes a first region, a second region, at least one quantum well, and a third region. The at least one quantum well is installed in the second region, and the second region is coupled between the first region and the third region. When one of the first region, the second region, and the third region receives two signals, or two of the first region, the second region, and the third region receive the two signals respectively, the at least one quantum well emits the laser with the fixed frequency.
In another embodiment of the present invention, the first region, the second region, and the third region include a first semiconductor material, the at least one quantum well includes a second semiconductor material, polarity of the first region is identical to polarity of the third region, the polarity of the first region is different from polarity of the second region, and the first semiconductor material is different from the second semiconductor material.
In another embodiment of the present invention, the second semiconductor material is used for emitting the laser with the fixed frequency, and the second semiconductor material is Aluminum gallium arsenide, or Aluminum gallium indium phosphide, or Indium gallium phosphide or Indium gallium nitride, or Zinc oxide.
In another embodiment of the present invention, the first semiconductor material is Gallium arsenide, or Indium gallium phosphide, or Aluminum gallium arsenide, and material of the first region, the second region, and the third region may not be the same at the same time.
In another embodiment of the present invention, when the one of the first region, the second region and the third region receives the two signals, or when the two of the first region, the second region, and the third region receive the two signals respectively, the two signals are used to generate an intrinsic current flowing into the at least one quantum well and generate an intrinsic reverse bias between the second region and the third region, and the intrinsic current and the intrinsic reverse bias correspond to the laser with the fixed frequency.
In another embodiment of the present invention, the at least one quantum well emits the laser with the fixed frequency by utilizing current modulation mechanism corresponding to the intrinsic current and voltage modulation mechanism corresponding to the intrinsic reverse bias.
In another embodiment of the present invention, the current modulation mechanism changes carrier concentration of the at least one quantum well through the intrinsic current to make the at least one quantum well generate a first laser, and the voltage modulation mechanism utilizes Franz-Keldysh effect to modulate the first laser to emit the laser with the fixed frequency.
In another embodiment of the present invention, the two signals are two voltage signals, or two current signals, or one voltage signal and one current signal.
The present invention provides the transistor for emitting the laser with the fixed frequency. The transistor makes the at least one quantum well in the transistor emit laser with a fixed frequency by utilizing current modulation mechanism corresponding to an intrinsic current induced by two signals inputted to the transistor and voltage modulation mechanism corresponding to an intrinsic reverse bias induced by the two signals inputted to the transistor. Therefore, compared to the prior art, because the transistor is a single integrated device and capable of emitting the laser with the fixed frequency, the present invention can effectively solve the shortcomings of larger volume and much loss of the prior art.
These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1A is a diagram illustrating a transistor for emitting laser with a fixed frequency according to a first embodiment of the present invention.
FIG. 1B is a diagram illustrating the first region being coupled to first input/output pin, the second region being coupled to second input/output pin, and the third region being coupled to third input/output pin.
FIG. 2 is a diagram illustrating an equivalent circuit when the transistor operates according to the first signal and the second signal.
FIG. 3 is a diagram illustrating frequency shift of first laser and frequency shift of second laser being opposite.
FIG. 4 is a diagram illustrating frequency shift of the laser with the fixed frequency being zero.
 DETAILED DESCRIPTION
Please refer to FIG. 1A. FIG. 1A is a diagram illustrating a transistor 100 for emitting laser with a fixed frequency according to a first embodiment of the present invention, wherein the transistor 100 includes a first region 202, a second region 204, a quantum well 300, and a third region 206, wherein the quantum well 300 is installed in the second region 204, and the second region 204 is coupled between the first region 202 and the third region 206. But, the present invention is not limited to the transistor 100 including the quantum well 300, that is, the transistor 100 can include multiple quantum wells. In addition, in one embodiment of the present invention, the first region 202 is emitter, the second region 204 is base, and the third region 206 is collector. The first region 202, the second region 204, and the third region 206 include a first semiconductor material, and the quantum well 300 include a second semiconductor material, wherein polarity of the first region 202 is identical to polarity of the third region 206, and the polarity of the first region 202 is different from polarity of the second region 204, wherein the first semiconductor material is Gallium arsenide, or Indium gallium phosphide, or Aluminum gallium arsenide, and material of the first region 202, the second region 204, and the third region 206 may not be the same at the same time, and the second semiconductor material is Aluminum gallium arsenide, or Aluminum gallium indium phosphide, or Indium gallium phosphide, or Indium gallium nitride, or Zinc oxide. However, the present invention is not limited to the first semiconductor material being Gallium arsenide, or Indium gallium phosphide, or Aluminum gallium arsenide, and the second semiconductor material being Aluminum gallium arsenide, or Aluminum gallium indium phosphide, or Indium gallium phosphide, or Indium gallium nitride, or Zinc oxide. In one embodiment of the present invention, the first region 202 and the third region 206 include N-type semiconductor material, and the second region 204 includes P-type semiconductor material. But, in another embodiment of the present invention, the first region 202 and the third region 206 include the P-type semiconductor material, and the second region 204 includes the N-type semiconductor material. In addition, as shown in FIG. 1B, the first region 202 is coupled to a first input/output pin 102, the second region 204 is coupled to a second input/output pin 104, and the third region 206 is coupled to a third input/output pin 106.
In one embodiment of the present invention, when the transistor 100 operates, the second input/output pin 104 can receive a first signal S1 and the third input/output pin 106 can receive a second signal S2, wherein the first signal S1 is a current signal and the second signal S2 is a voltage signal. In addition, when the transistor 100 operates, a first DC (direct current) bias V1 is coupled between the first input/output pin 102 and the second input/output pin 104, and a second DC bias V2 is coupled between the second input/output pin 104 and the third input/output pin 106. In addition, an equivalent circuit can be referred to FIG. 2 when the transistor 100 operates according to the first signal S1 and the second signal S2.
As shown in FIG. 2 , the first DC bias V1 and the second DC bias V2 can make the transistor 100 operate normally, and the first signal S1 and the second signal S2 can make an intrinsic current 130 flow into the quantum well 300 and generate an intrinsic reverse bias V30 between the second region 204 and the third region 206 (because the transistor 100 has characteristics of an ordinary transistor, the transistor 100 can use internal parasitic circuits to convert the first signal S1 and the second signal S2 into the intrinsic current 130 and the intrinsic reverse bias V30, wherein the above-mentioned conversion process is called an electrical transfer function). The transistor 100 can make the quantum well 300 emit a fixed frequency laser 302 by current modulation mechanism corresponding to the intrinsic current 130 and voltage modulation mechanism corresponding to the intrinsic reverse bias V30. That is to say, the current modulation mechanism changes carrier concentration of the quantum well 300 through the intrinsic current 130 so that the quantum well 300 generates first laser L304 (as shown in FIG. 3 ), and the voltage modulation mechanism modulates the first laser L304 by Franz-Keldysh effect generated by the intrinsic reverse bias V30 to make the quantum well 300 generate second laser L306 (as shown in FIG. 3 ), wherein as shown in FIG. 3 , frequency shift of the first laser L304 and frequency shift of the second laser L306 are opposite, and the first laser L304 and the second laser L306 can be regard as the laser of the same source, but they are discussed respectively for convenience of explanation, so the quantum well 300 can finally emit the fixed frequency laser 302 according to the first laser L304 and the second laser L306. Therefore, as shown in FIG. 4 , a frequency of the fixed frequency laser 302 is independent of time, that is, frequency shift of the fixed frequency laser 302 is zero.
In addition, in another embodiment of the present invention, the first signal S1 and the second signal S2 can be two current signals, or two voltage signals, or the first signal S1 is a voltage signal and the second signal S2 is a current signal. In addition, in another embodiment of the present invention, the first signal S1 and the second signal S2 can be received by the first input/output pin 102, or by the second input/output pin 104, or by the third input/output pin 106, or by two of the first input/output pin 102, second input/output pin 104, and the third input/output pin 106, or it can be received by the first input/output pin 102, the second input/output pin 104, and the third input/output pin 106 at the same time, and the present invention is not limited to only including the first input/output pin 102, the second input/output pin 104, and the third input/output pin 106.
To sum up, the transistor of the present invention makes the quantum well in the transistor emit the laser with the fixed frequency by utilizing the current modulation mechanism corresponding to the intrinsic current induced by the two signals inputted to the transistor and the voltage modulation mechanism corresponding to the intrinsic reverse bias induced by the two signals inputted to the transistor. Therefore, compared to the prior art, because the transistor is a single integrated device and capable of emitting the laser with the fixed frequency, the present invention can effectively solve the shortcomings of larger volume and much loss of the prior art.
Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.

Claims (7)

What is claimed is:
1. A transistor for emitting laser with a fixed frequency, comprising:
a first region;
a second region;
at least one quantum well installed in the second region; and
a third region, wherein the second region is coupled between the first region and the third region;
wherein when a first DC (direct current) bias is coupled between the first region and the second region and a second DC bias is coupled between the second region and the third region to make the transistor operate normally, one of the first region, the second region, and the third region receives two signals from outside of the transistor, or two of the first region, the second region, and the third region receive the two signals respectively from the outside of the transistor to make the at least one quantum well emit the laser with the fixed frequency, wherein the first DC bias and the second DC bias are different from the two signals, and the two signals are two voltage signals, or two current signals, or one voltage signal and one current signal.
2. The transistor of claim 1, wherein the first region, the second region, and the third region comprise a first semiconductor material, the at least one quantum well comprises a second semiconductor material, polarity of the first region is identical to polarity of the third region, the polarity of the first region is different from polarity of the second region, and the first semiconductor material is different from the second semiconductor material.
3. The transistor of claim 2, wherein the second semiconductor material is used for emitting the laser with the fixed frequency, and the second semiconductor material is Aluminum gallium arsenide, or Aluminum gallium indium phosphide, or Indium gallium phosphide, or Indium gallium nitride, or Zinc oxide.
4. The transistor of claim 2, wherein the first semiconductor material is Gallium arsenide, or Indium gallium phosphide, or Aluminum gallium arsenide, and material of the first region, the second region, and the third region may not be the same at the same time.
5. The transistor of claim 1, wherein when the one of the first region, the second region and the third region receives the two signals, or when the two of the first region, the second region, and the third region receive the two signals respectively, the two signals are used for generating an intrinsic current flowing into the at least one quantum well and generating an intrinsic reverse bias between the second region and the third region, and the intrinsic current and the intrinsic reverse bias correspond to the laser with the fixed frequency.
6. The transistor of claim 5, wherein the at least one quantum well emits the laser with the fixed frequency by utilizing current modulation mechanism corresponding to the intrinsic current and voltage modulation mechanism corresponding to the intrinsic reverse bias.
7. The transistor of claim 6, wherein the current modulation mechanism changes carrier concentration of the at least one quantum well through the intrinsic current to make the at least one quantum well generate a first laser, and the voltage modulation mechanism utilizes Franz-Keldysh effect to modulate the first laser to emit the laser with the fixed frequency.
US16/928,000 2020-07-14 2020-07-14 Transistor for emitting laser with a fixed frequency Active 2041-03-27 US11749965B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/928,000 US11749965B2 (en) 2020-07-14 2020-07-14 Transistor for emitting laser with a fixed frequency

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16/928,000 US11749965B2 (en) 2020-07-14 2020-07-14 Transistor for emitting laser with a fixed frequency

Publications (2)

Publication Number Publication Date
US20220021182A1 US20220021182A1 (en) 2022-01-20
US11749965B2 true US11749965B2 (en) 2023-09-05

Family

ID=79292938

Family Applications (1)

Application Number Title Priority Date Filing Date
US16/928,000 Active 2041-03-27 US11749965B2 (en) 2020-07-14 2020-07-14 Transistor for emitting laser with a fixed frequency

Country Status (1)

Country Link
US (1) US11749965B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115579732B (en) * 2022-10-31 2026-01-23 太原理工大学 Broadband chaotic laser generating device based on transistor laser current feedback

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801993A (en) * 1986-02-04 1989-01-31 David Ankri Monolithic semiconductor structure of a heterojunction bipolar transistor and a laser
US5111255A (en) * 1990-06-05 1992-05-05 At&T Bell Laboratories Buried channel heterojunction field effect transistor
US5239550A (en) * 1991-12-03 1993-08-24 University Of Connecticut Transistor lasers
US20070201523A1 (en) * 2006-02-27 2007-08-30 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
US20100073086A1 (en) * 2008-09-25 2010-03-25 Holonyak Jr Nick Method and apparatus for producing linearized optical signals
US20100078623A1 (en) * 2003-08-22 2010-04-01 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US20100085995A1 (en) * 2007-10-12 2010-04-08 Milton Feng Transistor laser devices and methods
US20100289427A1 (en) * 2009-01-08 2010-11-18 Quantum Electro Opto Systems Sdn. Bhd. Light emitting and lasing semiconductor methods and devices
US20130093352A1 (en) * 2011-10-07 2013-04-18 The Board Of Trustees Of The University Of Illinois Opto-Electronic Devices And Methods
US20130094532A1 (en) * 2011-10-07 2013-04-18 The Board Of Trustees Of The University Of Illinois Opto-Electronic Oscillator And Method
US20140050241A1 (en) * 2012-08-20 2014-02-20 The Board Of Trustees Of The University Of Illinois Semiconductor Device And Method For Producing Light And Laser Emission
US20150014632A1 (en) * 2013-03-15 2015-01-15 Matthew H. Kim Advanced Heterojunction Devices and Methods of Manufacturing Advanced Heterojunction Devices
US20150255954A1 (en) * 2014-03-05 2015-09-10 The Board Of Trustees Of The University Of Illinois Method And Device For Producing Laser Emission
US20150318666A1 (en) * 2012-12-05 2015-11-05 Mattias HAMMAR Vertical-cavity surface-emitting transistor laser, t-vcsel and method for producing the same
US20190123513A1 (en) * 2017-10-23 2019-04-25 The Board Of Trustees Of The University Of Illinois Transistor laser electrical and optical bistable switching

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801993A (en) * 1986-02-04 1989-01-31 David Ankri Monolithic semiconductor structure of a heterojunction bipolar transistor and a laser
US5111255A (en) * 1990-06-05 1992-05-05 At&T Bell Laboratories Buried channel heterojunction field effect transistor
US5239550A (en) * 1991-12-03 1993-08-24 University Of Connecticut Transistor lasers
US20100078623A1 (en) * 2003-08-22 2010-04-01 The Board Of Trustees Of The University Of Illinois Semiconductor method and device
US20070201523A1 (en) * 2006-02-27 2007-08-30 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
US20100085995A1 (en) * 2007-10-12 2010-04-08 Milton Feng Transistor laser devices and methods
US20100073086A1 (en) * 2008-09-25 2010-03-25 Holonyak Jr Nick Method and apparatus for producing linearized optical signals
US20100289427A1 (en) * 2009-01-08 2010-11-18 Quantum Electro Opto Systems Sdn. Bhd. Light emitting and lasing semiconductor methods and devices
US20130093352A1 (en) * 2011-10-07 2013-04-18 The Board Of Trustees Of The University Of Illinois Opto-Electronic Devices And Methods
US20130094532A1 (en) * 2011-10-07 2013-04-18 The Board Of Trustees Of The University Of Illinois Opto-Electronic Oscillator And Method
US20140050241A1 (en) * 2012-08-20 2014-02-20 The Board Of Trustees Of The University Of Illinois Semiconductor Device And Method For Producing Light And Laser Emission
US20150318666A1 (en) * 2012-12-05 2015-11-05 Mattias HAMMAR Vertical-cavity surface-emitting transistor laser, t-vcsel and method for producing the same
US20150014632A1 (en) * 2013-03-15 2015-01-15 Matthew H. Kim Advanced Heterojunction Devices and Methods of Manufacturing Advanced Heterojunction Devices
US20150255954A1 (en) * 2014-03-05 2015-09-10 The Board Of Trustees Of The University Of Illinois Method And Device For Producing Laser Emission
US20190123513A1 (en) * 2017-10-23 2019-04-25 The Board Of Trustees Of The University Of Illinois Transistor laser electrical and optical bistable switching

Also Published As

Publication number Publication date
US20220021182A1 (en) 2022-01-20

Similar Documents

Publication Publication Date Title
EP2487763A1 (en) Biasing circuit of electro-absorption modulated laser and debugging method thereof
US4799224A (en) Driver for a semiconductor laser
US6587489B2 (en) Electronic driver circuit for directly modulated semiconductor lasers
US4339822A (en) Diode laser digital modulator
Petousi et al. Monolithically integrated high-extinction-ratio MZM with a segmented driver in photonic BiCMOS
US11749965B2 (en) Transistor for emitting laser with a fixed frequency
JP2012151244A (en) Optical transmission circuit
JP3264669B2 (en) Laser control method and its device
Woodward et al. Modulator-driver circuits for optoelectronic VLSI
US6055087A (en) Photo-induced electro-optic oscillator using a multiple quantum well pin diode
US20130093352A1 (en) Opto-Electronic Devices And Methods
TWI740574B (en) Transistor for emitting laser with a fixed frequency
Tanaka et al. High-speed LED driver for visible light communications with drawing-out of remaining carrier
CN108601144A (en) Unmanned electro-optical driving integrated circuit
Wang et al. GaN photonics: simultaneous emission-detection phenomenon of multiple quantum well diode
Nakano et al. Monolithic integration of laser diodes, photomonitors, and laser driving and monitoring circuits on a semi-insulating GaAs
EP0692873A1 (en) Apparatus for converting optical bipolar signals to optical unipolir signals
US6741375B2 (en) Optical modulator drive circuit
JP3628367B2 (en) Driving circuit for optical modulator
Saha et al. Optoelectronics and Optical Communication
CN219801487U (en) Device for modulating semiconductor laser by AC/DC balance
WO1992000543A1 (en) Bipolar junction transistor combined with an optical modulator
JP3126048B2 (en) Optical transceiver circuit
US11536990B2 (en) Driver circuit for driving a voltage controlled electro-optical modulator
Winoto et al. Integrated photonics of transistor laser, detector and active load for all optical NOR gate

Legal Events

Date Code Title Description
AS Assignment

Owner name: NATIONAL TAIWAN UNIVERSITY, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WU, CHAO-HSIN;TUNG, CHIEN-TING;CHANG, SHU-WEI;SIGNING DATES FROM 20200609 TO 20200611;REEL/FRAME:053196/0524

FEPP Fee payment procedure

Free format text: ENTITY STATUS SET TO UNDISCOUNTED (ORIGINAL EVENT CODE: BIG.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

FEPP Fee payment procedure

Free format text: ENTITY STATUS SET TO SMALL (ORIGINAL EVENT CODE: SMAL); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER

STPP Information on status: patent application and granting procedure in general

Free format text: FINAL REJECTION MAILED

STPP Information on status: patent application and granting procedure in general

Free format text: NOTICE OF ALLOWANCE MAILED -- APPLICATION RECEIVED IN OFFICE OF PUBLICATIONS

STCF Information on status: patent grant

Free format text: PATENTED CASE