UA68662A - Device for forming dead and limit zones - Google Patents

Abstract

The proposed device for forming dead and limit zones contains a reference voltage source, two transistors, two resistors, and additionally, two stabilitrons. The bases of the transistors are connected to each other and to the first output of the reference voltage source, The emitters of the transistors are connected to the second output of the reference voltage source via the corresponding resistors. The collector of the first transistor is connected to the first input of the proposed device via the first stabilitron. The collector of the second transistor is connected to the second input of the proposed device via the second stabilitron.

Description

Description of the invention

The invention belongs to electrical engineering and can be used in automation devices and measuring equipment.

There is a known device (see Tetelbaum I.M., Schneider Y.R. 400 schemes for AVM. - M.: Znergia, 1978. - P. 70. - p. 2-8-7), which contains two operational amplifiers , two power supplies, two zener diodes, six diodes, six resistors, three input buses and an output bus.

The disadvantage of this device is low reliability. 70 The device closest to the intended invention is a device (see AS USSR Mo 444171, cl. ZO5E1/561), which contains a reference voltage source, the first and second transistors, the first and second resistors, the first and second input buses, while the bases transistors are interconnected and connected to the first terminal of the reference voltage source, the emitters of the first and second transistors are connected to the second terminal of the reference voltage source, respectively, through the first and second resistors, the collectors of the first and second transistors are connected to the first and second input pins, respectively.

The disadvantage of this device is the inability to work in the mode of forming a zone of insensitivity and limitation.

The features of the prototype that coincide with the essential features of the claimed invention are: a reference voltage source, the first and second transistors, the first and second resistors, the first and second input buses, while the bases of the transistors are interconnected and connected to the first terminal of the source, reference voltage, the emitters of the first and second transistors are wetted to the second output of the reference voltage source, respectively, through the first and second resistors.

The reason that prevents obtaining the desired result - the formation of a zone of insensitivity and limitation - is the lack of complementary elements connected to other elements of the device by certain circuit solutions. 29 The invention is based on the task of improving the device in such a way that, with the help of "the introduction of additional elements and appropriate circuit-technical means, the formation of the zone of insensitivity and limitation can be achieved."

The task is solved in such a way that the shaper of the insensitivity and limitation zone contains a reference voltage source, the first and second transistors, the first and second resistors, the first and second oscillating diodes, the first and second input buses, while the bases of the transistors are interconnected and connected to the first output of the reference voltage source, the emitters of the first and second transistors are connected to the second output of the reference voltage source, respectively, through the first and second resistors, the collector of the first transistor through the first zener diode is connected to the first input bus, and the collector of the second transistor is connected through the second zener diode to the second input bus. 3. The proof of the existence of a cause-and-effect relationship between the set of essential features of the invention and its technical effect is the fact that the technical result - the formation of a zone of insensitivity and limitation - can be achieved only when using the entire set of essential features of the invention.

In the absence of at least one feature in the technical solution, the technical result is not achieved. "

The drawing (Fig. 1) shows the scheme of the device. The generator of the insensitivity zone and limitation contains a source of 540 1 reference voltage, the first 2 and the second Z transistors, the first 4 and the second 5 resistors, the first 6 and the second 7 s zener diodes, the first 8 and the second 9 input buses, while the bases of the transistors 2, Z interconnected and connected

From" to the first terminal of the source and the reference voltage, the emitters of the first 2 and the second Z transistors are connected to the second terminal of the source 1 of the reference voltage, respectively, through the first 4 and second b resistors, the collector of the first 2 transistor is connected to the first 8 input bus through the first 6 zener, and the collector of the second C transistor is connected to the second 9 input bus via the second 7 zener diode. b The insensitivity zone and restriction generator works as follows.

Ge | When there is no voltage on the buses 8, 9 and the source and reference voltage are turned on, the emitter junctions of the transistors 3, 8 shift in the forward direction. When a positive voltage is applied to bus 8, there is a negative voltage to b bus 9 and the voltage drop on the zener diode b does not exceed the breakdown voltage, then the current through the collector circuits

Gee! 20 transistors 2, 8 do not flow.

When the voltage drop on the zener diode b reaches the breakdown voltage, the current flows through the circuit: bus 8, from the zener diode 6, collector-emitter transition of transistor 2, resistor 4, reference voltage source 1, collector junction of transistor 3, zener diode 7, bus 9. Yes as the dynamic resistance of transistor 2 is large, when the voltage on buses 3, 9 increases, the current flowing through the device will remain unchanged. At the same time, the right branch 29 of the characteristic is formed (Fig. 2). in. When a positive voltage is supplied to bus 9, and a negative voltage to bus 8, and the voltage drop on the zener diode 7 does not exceed the breakdown voltage, then the current does not flow through the collector circuits of transistors 2, З. When the voltage drop on zener diode 7 reaches the breakdown voltage, current flows through the circuit: bus 9, zener diode 7, collector-emitter junction of transistor 3, resistor 5, source and reference voltage, collector junction of transistor 2, 60 zener diode 6, bus 3. Yes as the dynamic resistance of transistor C is large, when the voltage on buses 9, 8 increases, the current flowing through the device will remain unchanged. At the same time, the left branch of the characteristic is formed (Fig. 2). b5

8 Z and B

How 1 ? 70 2 From "I |:

Fig. 1

IN

" "In the input with (Se) (Se) with (Se) 20 Fig. 7 - in p

Claims (1)

. ;" The formula of the invention is the shaper of the insensitivity zone and the limitation, which contains a reference voltage source, the first and second Ge) transistors, the first and second resistors, the first and second input buses, while the bases of the transistors are connected to each other and connected to the first terminal of the reference voltage source , the emitters of the first and second transistors are connected to the second output of the reference voltage source, respectively, through the first and second resistors, Ge) which is distinguished by the fact that it additionally contains the first and second zener diodes, while the collector of the first 50 transistor is connected to the first input bus through the first zener diode , and the collector of the second transistor is connected to the second input bus through the second zener diode. Co.) Official Bulletin "Industrial Property". Book 1 "Inventions, useful models, topographies of integrated microcircuits", 2004, M 8, 15.08.2004. State Department of Intellectual Property of the Ministry of Education and Science of Ukraine. 60 b5