TWM504421U - Light emitting diode package element for directly receiving AC power - Google Patents
Light emitting diode package element for directly receiving AC power Download PDFInfo
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- TWM504421U TWM504421U TW104203978U TW104203978U TWM504421U TW M504421 U TWM504421 U TW M504421U TW 104203978 U TW104203978 U TW 104203978U TW 104203978 U TW104203978 U TW 104203978U TW M504421 U TWM504421 U TW M504421U
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- 239000000758 substrate Substances 0.000 claims abstract description 83
- 238000005516 engineering process Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 38
- 239000008393 encapsulating agent Substances 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 239000006096 absorbing agent Substances 0.000 claims description 10
- 230000000087 stabilizing effect Effects 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 238000005476 soldering Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 244000166124 Eucalyptus globulus Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
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Abstract
Description
本新型係關於一種發光二極體封裝元件,尤其是指一種直接接受交流電之發光二極體封裝元件。The present invention relates to a light emitting diode package component, and more particularly to a light emitting diode package component that directly accepts alternating current.
由於現今發光二極體光源使用低壓電源,具有耗能少、適用性强、穩定性高、回應時間短、對環境無污染、多色發光等優點,目前照明行業所使用的燈具已大都採用發光二極體(LED)光源。Since the current light-emitting diode light source uses a low-voltage power source, it has the advantages of low energy consumption, strong applicability, high stability, short response time, no pollution to the environment, multi-color light emission, etc., and most of the lamps used in the lighting industry currently use light. Diode (LED) light source.
近日起,相較直流電驅動之發光二極體,一種新推出之交流電驅動之發光二極體光源(以下簡稱AC LED光源)具有更節能省電、長壽的特性。AC LED光源是將發光二極體(LED)晶粒得以直接使用交流電源之電流以進行發光工作。Recently, compared with the DC-driven LED, a newly introduced AC-powered LED source (hereinafter referred to as AC LED source) has the characteristics of more energy saving, longer life. The AC LED light source is a current that allows the light-emitting diode (LED) die to directly use an AC power source for illuminating operation.
然而,AC LED光源往往因為內部元件之連接狀態的穩定與否,而影響了與交流電源連接的電連接品質。However, the AC LED light source often affects the quality of the electrical connection to the AC power source due to the stability of the connection state of the internal components.
故,如何研發出一種解決方案以改善上述所帶來 的缺失及不便,實乃相關業者目前刻不容緩之一重要課題。Therefore, how to develop a solution to improve the above The lack of inconvenience and inconvenience is an important issue that the relevant industry is currently unable to delay.
有鑑於此,本新型之一目的在於提供一種直接接受交流電之發光二極體封裝元件,藉以解決先前技術所述的問題。In view of the above, it is an object of the present invention to provide a light emitting diode package component that directly accepts alternating current, thereby solving the problems described in the prior art.
為了達到上述目的,依據本新型之一實施方式,一種直接接受交流電之發光二極體封裝元件包含一基板、多個發光二極體晶片、至少一橋式整流單元、至少一限流單元與一封裝單元。基板用以電性連接一交流電源。基板之一面具有一第一置晶區以及一環繞該第一置晶區之週邊區。發光二極體晶片位於第一置晶區上,電性連接基板。橋式整流單元電性連接基板,用以將交流電源之交流電轉換成直流電。限流單元電性連接基板、橋式整流單元與發光二極體晶片,用以控制提供給發光二極體晶片使用的直流電電量。橋式整流單元與限流單元至少一者透過表面黏著技術的方式設置於週邊區上。封裝單元包含一第一封裝膠體。第一封裝膠體覆蓋第一置晶區,並固定發光二極體晶片於基板上。In order to achieve the above object, in accordance with an embodiment of the present invention, a light-emitting diode package component that directly accepts alternating current includes a substrate, a plurality of light-emitting diode chips, at least one bridge rectifier unit, at least one current limiting unit, and a package. unit. The substrate is electrically connected to an AC power source. One of the masks of the substrate has a first crystallographic region and a peripheral region surrounding the first crystallographic region. The light emitting diode chip is located on the first crystallographic region and electrically connected to the substrate. The bridge rectifier unit is electrically connected to the substrate for converting AC power of the AC power source into DC power. The current limiting unit is electrically connected to the substrate, the bridge rectifier unit and the LED chip for controlling the DC power supplied to the LED chip. At least one of the bridge rectifier unit and the current limiting unit is disposed on the peripheral area by means of surface adhesion technology. The package unit includes a first encapsulant. The first encapsulant covers the first crystallographic region and fixes the LED chip on the substrate.
在上述實施方式中,由於至少橋式整流單元或限流單元透過表面黏著技術的方式設置於週邊區上,可大大提昇了橋式整流單元或限流單元的工作穩定度,進而提高了與交流電源連接的電連接品質。In the above embodiment, since at least the bridge rectifier unit or the current limiting unit is disposed on the peripheral area through the surface adhesion technology, the working stability of the bridge rectifier unit or the current limiting unit can be greatly improved, thereby improving communication and communication. The electrical connection quality of the power connection.
在本新型一或多個實施方式中,發光二極體封裝元件更包含一環繞單元。環繞單元位於基板之那面上,並環繞 出一對應於第一置晶區之容膠空間。第一封裝膠體填滿容膠空間,並同時覆蓋第一置晶區與發光二極體晶片。In one or more embodiments of the present invention, the LED package component further includes a surrounding unit. The surround unit is on the side of the substrate and surrounds A glue space corresponding to the first crystal zone is formed. The first encapsulant fills the adhesive space and covers both the first crystal region and the LED chip.
在本新型一或多個實施方式中,基板更具有一第二置晶區。第二置晶區位於週邊區上。橋式整流單元透過表面貼焊技術的方式設置於週邊區上,且限流單元位於第二置晶區內。封裝單元更包含一第二封裝膠體。第二封裝膠體覆蓋第二置晶區,並固定限流單元於基板上。In one or more embodiments of the present invention, the substrate further has a second crystal zone. The second crystal zone is located on the peripheral zone. The bridge rectifier unit is disposed on the peripheral zone by surface soldering technology, and the current limiting unit is located in the second crystal zone. The package unit further comprises a second encapsulant. The second encapsulant covers the second crystallographic region and fixes the current limiting unit on the substrate.
在本新型一或多個實施方式中,基板更具有一第二置晶區。第二置晶區位於週邊區上。限流單元透過表面貼焊技術的方式設置於週邊區上,且橋式整流單元位於第二置晶區內。封裝單元更包含一第二封裝膠體。第二封裝膠體覆蓋第二置晶區,並固定橋式整流單元於基板上。In one or more embodiments of the present invention, the substrate further has a second crystal zone. The second crystal zone is located on the peripheral zone. The current limiting unit is disposed on the peripheral area by means of surface soldering technology, and the bridge rectifier unit is located in the second crystallizing area. The package unit further comprises a second encapsulant. The second encapsulant covers the second crystallographic region and fixes the bridge rectifier unit on the substrate.
在本新型一或多個實施方式中,發光二極體封裝元件更包含一環繞單元。環繞單元位於基板之那面上,並環繞出一對應於第二置晶區之容膠空間。第二封裝膠體填滿容膠空間,並同時覆蓋第二置晶區以及橋式整流單元與限流單元其中一者。In one or more embodiments of the present invention, the LED package component further includes a surrounding unit. The surrounding unit is located on the surface of the substrate and surrounds a capacitive space corresponding to the second crystallizing area. The second encapsulant fills the adhesive space and covers the second crystallizing area and one of the bridge rectifier unit and the current limiting unit.
在本新型一或多個實施方式中,橋式整流單元與限流單元皆透過表面貼焊技術的方式設置於週邊區上。發光二極體封裝元件更包含至少一穩壓單元、至少一保險絲與至少一突波吸收器。穩壓單元位於基板上,電性連接基板與限流單元。保險絲位於基板上,電性連接基板與穩壓單元。突波吸收器位於基板上,電性連接基板與保險絲。In one or more embodiments of the present invention, the bridge rectifier unit and the current limiting unit are disposed on the peripheral region by means of surface soldering technology. The LED package component further includes at least one voltage stabilizing unit, at least one fuse and at least one surge absorber. The voltage stabilizing unit is located on the substrate, and is electrically connected to the substrate and the current limiting unit. The fuse is located on the substrate and electrically connected to the substrate and the voltage stabilizing unit. The surge absorber is located on the substrate and electrically connected to the substrate and the fuse.
在本新型一或多個實施方式中,基板包含一板 體。板體為一金屬板或一非金屬板。In one or more embodiments of the present invention, the substrate comprises a board body. The plate body is a metal plate or a non-metal plate.
以上所述僅係用以闡述本新型所欲解決的問題、解決問題的技術手段、及其產生的功效等等,本新型之具體細節將在下文的實施方式及相關圖式中詳細介紹。The above description is only for explaining the problems to be solved by the present invention, the technical means for solving the problems, the effects thereof, and the like, and the specific details of the present invention will be described in detail in the following embodiments and related drawings.
10~12‧‧‧發光二極體封裝元件10~12‧‧‧Lighting diode package components
100‧‧‧基板100‧‧‧Substrate
110‧‧‧板體110‧‧‧ board
120‧‧‧散熱層120‧‧‧heat layer
130‧‧‧絕緣層130‧‧‧Insulation
140‧‧‧焊墊140‧‧‧ solder pads
150‧‧‧第一置晶區150‧‧‧first crystal zone
151‧‧‧置晶區151‧‧‧Setting area
160‧‧‧第二置晶區160‧‧‧Second crystal zone
170‧‧‧週邊區170‧‧‧ surrounding area
180‧‧‧第一環繞單元180‧‧‧First surround unit
181‧‧‧第一容膠空間181‧‧‧The first plastic space
190‧‧‧第二環繞單元190‧‧‧Second surround unit
191‧‧‧第二容膠空間191‧‧‧Second plastic space
200‧‧‧發光二極體晶片200‧‧‧Light Diode Wafer
210‧‧‧打線210‧‧‧Line
310‧‧‧橋式整流單元310‧‧‧Bridge rectifier unit
320、321‧‧‧限流單元320, 321‧‧‧ current limiting unit
330‧‧‧穩壓單元330‧‧‧Stabilizer
340‧‧‧保險絲340‧‧‧Fuse
350‧‧‧突波吸收器350‧‧‧ surge absorber
400‧‧‧封裝單元400‧‧‧Package unit
410‧‧‧第一封裝膠體410‧‧‧First encapsulant
411‧‧‧封裝膠體411‧‧‧Package colloid
420‧‧‧第二封裝膠體420‧‧‧Second encapsulant
S‧‧‧交流電源S‧‧‧AC power supply
P‧‧‧本體P‧‧‧ Ontology
L‧‧‧接腳L‧‧‧ pin
為讓本新型之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:第1圖繪示依據本新型一實施方式之直接接受交流電之發光二極體封裝元件的立體示意圖;第2圖繪示第1圖的2-2剖面圖;第3圖繪示依據本新型另一實施方式之直接接受交流電之發光二極體封裝元件的立體示意圖;以及第4圖繪示依據本新型又一實施方式之直接接受交流電之發光二極體封裝元件的功能方塊圖。The above and other objects, features, advantages and embodiments of the present invention will be more apparent and understood. The description of the drawings is as follows: FIG. 1 illustrates a light-emitting diode directly receiving alternating current according to an embodiment of the present invention. 2 is a cross-sectional view of the package component; FIG. 2 is a cross-sectional view taken along line 2-2 of FIG. 1; and FIG. 3 is a perspective view of the LED package component directly receiving AC power according to another embodiment of the present invention; 4 is a functional block diagram of a light emitting diode package component that directly accepts alternating current according to still another embodiment of the present invention.
以下將以圖式揭露本新型之複數實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,熟悉本領域之技術人員應當瞭解到,在本新型部分實施方式中,這些實務上的細節並非必要的,因此不應用以限制本新型。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。另外,為了便於讀者觀看,圖式中各元件的尺寸並非依實際比例繪示。The plural embodiments of the present invention are disclosed in the following drawings, and for the sake of clarity, a number of practical details will be described in the following description. However, it should be understood by those skilled in the art that these practical details are not necessary in some embodiments of the present invention and therefore are not intended to limit the present invention. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings. In addition, the dimensions of the various elements in the drawings are not shown in actual scale for the convenience of the reader.
第1圖繪示依據本新型一實施方式之直接接受交流電之發光二極體封裝元件10的立體示意圖。第2圖繪示第1圖的2-2剖面圖。如第1圖與第2圖所示,此種直接接受交流電之發光二極體封裝元件10包含一基板100、多個發光二極體晶片200、一橋式整流單元310、一限流單元320與一封裝單元400。基板100具有相對之二面,其一面分為一第一置晶區150、一第二置晶區160與一其餘位置之週邊區170。基板100,例如透過其上之線路圖案(圖中未示)電性連接一外部之交流電源(例如市電交流電源,圖中未示)。這些發光二極體晶片200位於第一置晶區150上,且電性連接基板100。橋式整流單元310透過表面黏著技術的方式設置於週邊區170上。橋式整流單元310電性連接基板100,用以將交流電源之交流電轉換成直流電。限流單元320位於第二置晶區160上,且電性連接基板100。限流單元320電性連接基板100、橋式整流單元310與發光二極體晶片200,用以控制提供給發光二極體晶片200使用的直流電電量。封裝單元400包含一第一封裝膠體410與一第二封裝膠體420。第一封裝膠體410覆蓋第一置晶區150,並固定發光二極體晶片200於基板100上。第二封裝膠體420覆蓋第二置晶區160,並固定限流單元320於基板100上。FIG. 1 is a perspective view of a light emitting diode package component 10 directly receiving alternating current according to an embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line 2-2 of Fig. 1. As shown in FIG. 1 and FIG. 2 , the LED device 10 directly receiving AC power includes a substrate 100 , a plurality of LED chips 200 , a bridge rectifier unit 310 , and a current limiting unit 320 . A package unit 400. The substrate 100 has opposite sides, one side of which is divided into a first crystal region 150, a second crystal region 160 and a peripheral portion 170 of the remaining position. The substrate 100 is electrically connected to an external AC power source (for example, a commercial AC power source, not shown) through a wiring pattern (not shown). The LED chips 200 are located on the first crystal region 150 and electrically connected to the substrate 100. The bridge rectifier unit 310 is disposed on the peripheral region 170 by means of a surface adhesion technique. The bridge rectifier unit 310 is electrically connected to the substrate 100 for converting AC power of the AC power source into DC power. The current limiting unit 320 is located on the second crystal placing region 160 and electrically connected to the substrate 100. The current limiting unit 320 is electrically connected to the substrate 100, the bridge rectifier unit 310, and the LED chip 200 for controlling the amount of direct current power supplied to the LED 200. The package unit 400 includes a first encapsulant 410 and a second encapsulant 420. The first encapsulant 410 covers the first crystal region 150 and fixes the LED wafer 200 on the substrate 100. The second encapsulant 420 covers the second crystal region 160 and fixes the current limiting unit 320 on the substrate 100.
在此實施方式中,由於至少橋式整流單元310透過表面黏著技術的方式設置於週邊區170上,可大大提昇了橋式整流單元310的工作穩定度,進而提高了與交流電源連接的電連接品質。In this embodiment, since at least the bridge rectifier unit 310 is disposed on the peripheral region 170 by means of surface adhesion technology, the working stability of the bridge rectifier unit 310 can be greatly improved, thereby improving the electrical connection with the AC power source. quality.
具體來說,基板100包含一板體110、一散熱層 120、一絕緣層130及多個導電焊墊140。板體110夾設於散熱層120與絕緣層130之間。散熱層120位於板體110之一側,用以提高發光二極體封裝元件10之散熱效能。絕緣層130位於板體110之另側,曝露出板體110之二部分以成為上述之第一置晶區150與第二置晶區160。這些導電焊墊140分別位於第一置晶區150與第二置晶區160內,間隔地排列於板體110表面,以供上述發光二極體晶片200與限流單元320透過基板100上之線路圖案電性連接交流電源S。Specifically, the substrate 100 includes a board 110 and a heat dissipation layer. 120, an insulating layer 130 and a plurality of conductive pads 140. The plate body 110 is interposed between the heat dissipation layer 120 and the insulation layer 130. The heat dissipation layer 120 is located on one side of the board 110 to improve the heat dissipation performance of the LED package component 10. The insulating layer 130 is located on the other side of the plate body 110, exposing two portions of the plate body 110 to become the first crystallizing region 150 and the second seeding region 160 described above. The conductive pads 140 are respectively disposed in the first and second crystal regions 150 and 160, and are spaced apart from each other on the surface of the substrate 110 for the light-emitting diode 200 and the current limiting unit 320 to pass through the substrate 100. The line pattern is electrically connected to the AC power source S.
在本實施方式中,板體110為一金屬板(如鋁基板100、銅基板100)或一非金屬板(如陶瓷基板100)。然而,本創作不限於此,其他實施方式中,板體110也可以為一印刷電路板或一軟式電路板等。此外,在本實施方式中,第一封裝膠體410與一第二封裝膠體420之材料例如為透光性樹脂(如矽樹酯或環氧樹脂)或其他習知材料。需瞭解到,第一封裝膠體410與第二封裝膠體420不限其種類、材質、成型時間點或體積大小。In the embodiment, the plate body 110 is a metal plate (such as the aluminum substrate 100, the copper substrate 100) or a non-metal plate (such as the ceramic substrate 100). However, the present invention is not limited thereto. In other embodiments, the board 110 may also be a printed circuit board or a flexible circuit board or the like. In addition, in the present embodiment, the material of the first encapsulant 410 and the second encapsulant 420 is, for example, a translucent resin (such as eucalyptus or epoxy) or other conventional materials. It should be understood that the first encapsulant 410 and the second encapsulant 420 are not limited by the type, material, molding time point or volume.
在本實施方式中,舉例來說,每一發光二極體晶片200為一藍色發光二極體晶片200,且每一發光二極體晶片200透過打線210(wire-bonding)連接的方式電性連接其兩側對應之導電焊墊140(正極與負極),並透過導電焊墊140電性連接上述基板100。In this embodiment, for example, each of the LED chips 200 is a blue LED wafer 200, and each of the LED chips 200 is electrically connected by wire-bonding. The conductive pads 140 (positive and negative) corresponding to the two sides are connected, and the substrate 100 is electrically connected through the conductive pads 140.
舉例來說,限流單元320為限流晶片等,且限流單元320透過打線210(wire-bonding)連接的方式電性連接其兩側對應之導電焊墊140(正極與負極),並透過導電焊墊140 電性連接基板100、橋式整流單元310與發光二極體晶片200。橋式整流單元310例如橋式整流器或橋式整流晶片等,為一積體電路封裝元件。積體電路封裝元件包括一封裝本體P及至少二接腳L。此些接腳L分別排列於封裝本體P之二相對側面,且自封裝本體P之二相對側面分別彎折地伸出,且此些接腳L分別焊接至其兩側對應之導電焊墊140(正極與負極),並透過導電焊墊140電性連接上述基板100。For example, the current limiting unit 320 is a current limiting chip or the like, and the current limiting unit 320 is electrically connected to the conductive pads 140 (positive and negative) corresponding to the two sides through a wire-bonding connection. Conductive pad 140 The substrate 100, the bridge rectifier unit 310, and the LED array 200 are electrically connected. The bridge rectifier unit 310, such as a bridge rectifier or a bridge rectifier wafer, is an integrated circuit package component. The integrated circuit package component includes a package body P and at least two pins L. The pins L are respectively arranged on opposite sides of the package body P, and are respectively bently extended from opposite sides of the package body P, and the pins L are respectively soldered to the corresponding conductive pads 140 on both sides thereof. The positive electrode and the negative electrode are electrically connected to the substrate 100 through the conductive pad 140.
此外,由於橋式整流單元310將交流電源之交流電轉換成直流電,且限流單元320可依序控制提供給任意數量之發光二極體晶片200所使用的直流電電量,以便依序點亮若干數量的發光二極體晶片200。In addition, since the bridge rectifier unit 310 converts the alternating current of the alternating current power source into direct current, the current limiting unit 320 can sequentially control the direct current power used by any number of the light emitting diode chips 200 to sequentially illuminate a certain number. Light-emitting diode wafer 200.
更進一步地,上述發光二極體封裝元件10更包含一第一環繞單元180與第二環繞單元190。第一環繞單元180位於基板100上,例如位於基板100之第一面上,並環繞出一對應於第一置晶區150之第一容膠空間181。第二環繞單元190位於基板100上,例如位於基板100之第一面上,並環繞出一對應於第二置晶區160之第二容膠空間191。如此,透過此封裝程序之進行,使得第一封裝膠體410得以接觸第一環繞單元180之內壁,且填滿第一容膠空間181,並同時覆蓋第一置晶區150與發光二極體晶片200,使得第二封裝膠體420得以接觸第二環繞單元190之內壁,且填滿第二容膠空間191,並同時覆蓋第二置晶區160與限流單元320。然而,本創作不限於此,其他實施方式中,也可以省略第一環繞單元,只以第一封裝膠體同時覆蓋第一置晶區與發光二極體晶片,或/及省略第二環 繞單元,只以第二封裝膠體同時覆蓋第二置晶區與限流單元。Further, the LED package component 10 further includes a first surrounding unit 180 and a second surrounding unit 190. The first surrounding unit 180 is located on the substrate 100 , for example, on the first surface of the substrate 100 , and surrounds a first capacitive space 181 corresponding to the first crystal forming region 150 . The second surrounding unit 190 is located on the substrate 100 , for example, on the first surface of the substrate 100 , and surrounds a second capacitive space 191 corresponding to the second crystal forming region 160 . In this way, the first encapsulant 410 is contacted with the inner wall of the first surrounding unit 180 and fills the first capacitive space 181 while covering the first crystallizing area 150 and the light emitting diode. The wafer 200 is such that the second encapsulant 420 can contact the inner wall of the second surrounding unit 190 and fill the second adhesive space 191 while covering the second crystal region 160 and the current limiting unit 320. However, the present invention is not limited thereto. In other embodiments, the first surrounding unit may be omitted, and only the first encapsulating layer covers the first crystallographic region and the LED substrate simultaneously, and/or the second ring is omitted. Around the unit, only the second encapsulation colloid covers the second crystal zone and the current limiting unit.
需瞭解到,儘管第一置晶區150以圓形型態配置於基板100中央,第二置晶區160以方形型態配置於基板100側緣,然而,本創作不限於此,其他實施方式中,本創作具有通常知識者也可以依需求或限制任意改變第一置晶區與第二置晶區之外型或位置。It should be noted that although the first crystallizing region 150 is disposed in the center of the substrate 100 in a circular shape, and the second crystallizing region 160 is disposed in a square shape on the side edge of the substrate 100, the present invention is not limited thereto, and other embodiments are In the present, the person having ordinary knowledge can also arbitrarily change the shape or position of the first and second crystal regions according to requirements or restrictions.
然而,本創作不限於此,請以第1圖作為參考,另一實施方式中,相反地,改以限流單元320透過表面黏著技術的方式設置於週邊區170上。更具體地,限流單元320為一積體電路封裝元件。積體電路封裝元件包括一封裝本體P及至少二接腳L。此些接腳L分別排列於封裝本體P之二相對側面,且自封裝本體P之二相對側面分別彎折地伸出,且此些接腳L分別焊接至其兩側對應之導電焊墊140(正極與負極),並透過導電焊墊140電性連接上述基板100。橋式整流單元310位於第二置晶區160上,透過打線210(wire-bonding)連接的方式電性連接其兩側對應之導電焊墊140(正極與負極),並透過導電焊墊140電性連接上述基板100。第二封裝膠體420覆蓋第二置晶區160,並固定橋式整流單元310於基板100上。However, the present invention is not limited thereto, and reference is made to FIG. 1 . In another embodiment, conversely, the current limiting unit 320 is disposed on the peripheral region 170 by means of surface adhesion technology. More specifically, the current limiting unit 320 is an integrated circuit package component. The integrated circuit package component includes a package body P and at least two pins L. The pins L are respectively arranged on opposite sides of the package body P, and are respectively bently extended from opposite sides of the package body P, and the pins L are respectively soldered to the corresponding conductive pads 140 on both sides thereof. The positive electrode and the negative electrode are electrically connected to the substrate 100 through the conductive pad 140. The bridge rectifier unit 310 is located on the second crystal region 160, and is electrically connected to the corresponding conductive pads 140 (positive and negative electrodes) on both sides thereof through a wire-bonding connection, and is electrically transmitted through the conductive pads 140. The substrate 100 is connected to the above. The second encapsulant 420 covers the second crystal region 160 and fixes the bridge rectifying unit 310 on the substrate 100.
第3圖繪示依據本新型另一實施方式之直接接受交流電之發光二極體封裝元件11的立體示意圖。如第3圖所示,另一實施方式之發光二極體封裝元件11包含一基板100、多個發光二極體晶片200、一橋式整流單元310、一限流單元321與一第一封裝膠體410。基板100之一面具有一置晶區151與圍繞置晶區151之週邊區170。基板100,例如透過其上之線 路圖案(圖中未示)電性連接一外部之交流電源(例如市電交流電源,圖中未示)。這些發光二極體晶片200位於置晶區151上,且電性連接基板100。橋式整流單元310與限流單元321皆透過表面黏著技術的方式設置於週邊區170上。封裝膠體411覆蓋置晶區151,並固定發光二極體晶片200於基板100上。由於橋式整流單元310與限流單元321的作用與上述相同,故,在此不再加以贅述。FIG. 3 is a perspective view of a light emitting diode package component 11 directly receiving alternating current according to another embodiment of the present invention. As shown in FIG. 3, the LED package component 11 of another embodiment includes a substrate 100, a plurality of LED packages 200, a bridge rectifier unit 310, a current limiting unit 321 and a first encapsulant. 410. One of the masks of the substrate 100 has a crystal region 151 and a peripheral region 170 surrounding the crystal region 151. The substrate 100, for example, a line passing therethrough The road pattern (not shown) is electrically connected to an external AC power source (for example, a commercial AC power source, not shown). The LED chips 200 are located on the crystallizing region 151 and electrically connected to the substrate 100. Both the bridge rectifier unit 310 and the current limiting unit 321 are disposed on the peripheral region 170 by means of a surface adhesion technique. The encapsulant 411 covers the crystal region 151 and fixes the LED chip 200 on the substrate 100. Since the functions of the bridge rectifier unit 310 and the current limiting unit 321 are the same as described above, they are not described herein again.
在此實施方式中,由於橋式整流單元310與限流單元321皆透過表面黏著技術的方式設置於週邊區170上,可大大提昇了橋式整流單元310與限流單元321的工作穩定度,進而提高了與交流電源連接的電連接品質。In this embodiment, since the bridge rectifying unit 310 and the current limiting unit 321 are all disposed on the peripheral area 170 by means of surface adhesion technology, the working stability of the bridge rectifying unit 310 and the current limiting unit 321 can be greatly improved. This further improves the quality of the electrical connection to the AC power source.
第4圖繪示依據本新型又一實施方式之直接接受交流電之發光二極體封裝元件12的功能方塊圖。如第4圖所示,第4圖之發光二極體封裝元件12與第1圖之發光二極體封裝元件10大致相同,其差異之一為發光二極體封裝元件12更包含至少一穩壓單元330、至少一保險絲340與至少一突波吸收器350。穩壓單元330、保險絲340與突波吸收器350依序或選擇性地排列在發光二極體封裝元件12(如基板)上且電性連接於交流電源S與發光二極體晶片200之間。換言之,穩壓單元330透過基板100電性連接橋式整流單元310與限流單元320。保險絲340透過基板100電性連接突波吸收器350與穩壓單元330。突波吸收器350透過基板100電性連接交流電源S與保險絲340。FIG. 4 is a functional block diagram of a light emitting diode package component 12 directly receiving alternating current according to still another embodiment of the present invention. As shown in FIG. 4, the LED package component 12 of FIG. 4 is substantially the same as the LED package component 10 of FIG. 1. One of the differences is that the LED package component 12 further includes at least one stable The pressing unit 330, the at least one fuse 340 and the at least one surge absorber 350. The voltage stabilizing unit 330, the fuse 340 and the surge absorber 350 are sequentially or selectively arranged on the LED package component 12 (such as a substrate) and electrically connected between the AC power source S and the LED chip 200. . In other words, the voltage stabilizing unit 330 is electrically connected to the bridge rectifier unit 310 and the current limiting unit 320 through the substrate 100. The fuse 340 is electrically connected to the surge absorber 350 and the voltage stabilizing unit 330 through the substrate 100. The surge absorber 350 is electrically connected to the AC power source S and the fuse 340 through the substrate 100.
由於突波吸收器350、保險絲340、穩壓單元 330、橋式整流單元310及限流單元320同時設置在基板100上,使得從交流電源S的交流電(AC)得以依序經過突波吸收器350、保險絲340、穩壓單元330、橋式整流單元310及限流單元320,進而能夠提供穩定的直流電(DC)給發光二極體晶片200使用。Due to the surge absorber 350, fuse 340, voltage regulator unit 330, the bridge rectifier unit 310 and the current limiting unit 320 are simultaneously disposed on the substrate 100, so that the alternating current (AC) from the alternating current power source S passes through the surge absorber 350, the fuse 340, the voltage stabilization unit 330, and the bridge rectifier. Unit 310 and current limiting unit 320, in turn, are capable of providing a stable direct current (DC) for use with light emitting diode wafer 200.
雖然本新型已以實施方式揭露如上,然其並非用以限定本新型,任何熟習此技藝者,在不脫離本新型之精神和範圍內,當可作各種之更動與潤飾,因此本新型之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any one skilled in the art can make various changes and retouchings without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
10‧‧‧發光二極體封裝元件10‧‧‧Lighting diode package components
100‧‧‧基板100‧‧‧Substrate
140‧‧‧焊墊140‧‧‧ solder pads
150‧‧‧第一置晶區150‧‧‧first crystal zone
160‧‧‧第二置晶區160‧‧‧Second crystal zone
170‧‧‧週邊區170‧‧‧ surrounding area
180‧‧‧第一環繞單元180‧‧‧First surround unit
181‧‧‧第一容膠空間181‧‧‧The first plastic space
190‧‧‧第二環繞單元190‧‧‧Second surround unit
191‧‧‧第二容膠空間191‧‧‧Second plastic space
200‧‧‧發光二極體晶片200‧‧‧Light Diode Wafer
210‧‧‧打線210‧‧‧Line
310‧‧‧橋式整流單元310‧‧‧Bridge rectifier unit
320‧‧‧限流單元320‧‧‧ Current limiting unit
400‧‧‧封裝單元400‧‧‧Package unit
410‧‧‧第一封裝膠體410‧‧‧First encapsulant
420‧‧‧第二封裝膠體420‧‧‧Second encapsulant
P‧‧‧本體P‧‧‧ Ontology
L‧‧‧接腳L‧‧‧ pin
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