TWM487927U - 氫氣產生總成及氫氣純化裝置 - Google Patents

氫氣產生總成及氫氣純化裝置 Download PDF

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TWM487927U
TWM487927U TW103204181U TW103204181U TWM487927U TW M487927 U TWM487927 U TW M487927U TW 103204181 U TW103204181 U TW 103204181U TW 103204181 U TW103204181 U TW 103204181U TW M487927 U TWM487927 U TW M487927U
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frame
assembly
hydrogen
stream
permeate
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TW103204181U
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David J Edlund
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Element 1 Corp
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Priority claimed from US13/829,766 external-priority patent/US9187324B2/en
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Publication of TWM487927U publication Critical patent/TWM487927U/zh

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Claims (20)

  1. 一種氫氣純化裝置，其包含：第一端框架及第二端框架，包括：一輸入埠，其經建構以接收含有氫氣及其他氣體之一混合氣體流；一輸出埠，其經建構以接收相較於該混合氣體流含有一較大濃度之氫氣及一較低濃度之該等其他氣體中之至少一者的一滲透物流；及一副產物埠，其經建構以接收含有該等其他氣體之至少一實質部分的一副產物流；安置於該第一端框架與該第二端框架之間且緊固至該第一端框架及該第二端框架之至少一氫氣選擇性膜，該至少一氫氣選擇性膜具有一進料側及一滲透物側，該滲透物流之至少部分係由該混合氣體流的自該進料側傳至該滲透物側之部分形成，其中該混合氣體流餘留在該進料側上之剩餘部分形成該副產物流之至少部分；及安置於該第一端框架及該第二端框架與該至少一氫氣選擇性膜之間且緊固至該第一端框架及該第二端框架之複數個框架，該等複數個框架包括安置於該至少一氫氣選擇性膜與該第二端框架之間的至少一滲透物框架，該至少一滲透物框架包括：一周邊殼體，形成於該周邊殼體上且經建構以接收來自該至少一氫氣選擇性膜之該滲透物流之該至少部分的一輸出管道，由該周邊殼體包圍之一開放區域，及至少一膜支撐結構，該至少一膜支撐結構跨越該開放區域之至少一實 質部分且經建構以支撐該至少一氫氣選擇性膜，該至少一膜支撐結構包括第一膜支撐板及第二膜支撐板，該第一膜支撐板及該第二膜支撐板中之每一者無穿孔，且具有：一第一面，其具有複數個微溝槽，該等複數個微溝槽經建構以提供用於該滲透物流之該至少部分的流動通道，及一第二面，其與該第一面對置，其中該第一膜支撐板及該第二膜支撐板堆疊於該至少一膜支撐結構中，使得該第一膜支撐板之該第二面面向該第二膜支撐板之該第二面。
  2. 如申請專利範圍第1項之裝置，其中該第一膜支撐板及該第二膜支撐板為不可壓縮且平坦的。
  3. 如申請專利範圍第1項之裝置，其中該等複數個框架包括安置於該第一端框架與該至少一氫氣選擇性膜之間的至少一進料框架，該至少一進料框架進一步包括：一周邊殼體，一輸入管道，其形成於該至少一進料框架之該周邊殼體上，且經建構以接收來自該輸入埠之該混合氣體流之至少部分，一輸出管道，其形成於該至少一進料框架之該周邊殼體上，且經建構以接收該混合氣體流之該至少部分的該剩餘部分，該剩餘部分係殘留在該至少一氫氣選擇性膜之該進料側上的，及一進料框架開放區域，其由該進料框架之該周邊殼體包圍，且安置於該輸入管道與該輸出管道之間，其中該至少一進料框架之該周邊殼體經設定大小，使得該至少一進料框架之該周邊殼體沿著複數個支撐平 面支撐該至少一滲透物框架之該周邊殼體及該至少一膜支撐結構之一部分，該等複數個支撐平面係垂直於該等複數個框架中之每一框架的框架平面。
  4. 如申請專利範圍第1項之裝置，其中該等複數個框架進一步包括至少一微孔篩網結構，該至少一微孔篩網結構安置於該至少一氫氣選擇性膜與該至少一滲透物框架之間且經建構以支撐該至少一氫氣選擇性膜，其中該至少一微孔篩網結構包括經建構以提供對該滲透物側之支撐的大體上對置表面，及在該等對置表面之間延伸之複數個流體通路，該至少一微孔篩網結構經設定大小以在該至少一微孔篩網結構及該至少一滲透物框架緊固至該第一端框架及該第二端框架時不接觸該至少一滲透物框架之該周邊殼體。
  5. 如申請專利範圍第1項之裝置，其中該至少一膜支撐結構進一步包括安置於該第一膜支撐板與該第二膜支撐板之間的一第三膜支撐板。
  6. 如申請專利範圍第5項之裝置，其中該第三膜支撐板為不可壓縮、平坦的，且無穿孔及微溝槽。
  7. 如申請專利範圍第1項之裝置，其中該滲透物框架之該周邊殼體包括第一周邊殼體及第二周邊殼體，及安置於該第一周邊殼體與該第二周邊殼體之間的一墊片。
  8. 如申請專利範圍第7項之裝置，其中該墊片經建構成使得當該滲透物框架緊固至該第一端框架及該第二端框架時，該滲透物框架周邊殼體之厚度與該膜支撐結構之厚度匹配。
  9. 如申請專利範圍第1項之裝置，其中該滲透物框架周邊殼體包括第一 周邊殼體、第二周邊殼體及第三周邊殼體、安置於該第一周邊殼體與該第二周邊殼體之間的一第一墊片，及安置於該第二周邊殼體與該第三周邊殼體之間的一第二墊片。
  10. 如申請專利範圍第9項之裝置，其中該第一墊片及該第二墊片經建構成使得當該滲透物框架緊固至該第一端框架及該第二端框架時，該滲透物框架周邊殼體之厚度與該膜支撐結構之厚度匹配。
  11. 如申請專利範圍第1項之裝置，其中該第一膜支撐板及該第二膜支撐板各自具有第一對置邊緣及該第二對置邊緣，其中該等複數個微溝槽自該第一邊緣延伸至該第二邊緣。
  12. 如申請專利範圍第11項之裝置，其中該等複數個微溝槽為彼此平行。
  13. 一種氫氣產生總成，其包含：一燃料處理總成，其經建構以接收一進料流且可在複數個模式間操作，該等複數個模式包括該燃料處理總成自該進料流生成一產物氫氣流的一運轉模式，及該燃料處理總成不會自該進料流生成該產物氫氣流的一待用模式，該燃料處理總成包括：一氫氣生成區域，其含有一重組催化劑且經建構以接收該進料流且生成一重組物流，一或多個氫氣選擇性膜，其經建構以接收該重組物流且自該重組物流生成該產物氫氣流及一副產物流之至少部分，及一重組物管道，其流體連接該氫氣生成區域與該一或多個氫氣選擇性膜；一緩衝槽，其經建構以含有該產物氫氣流； 一產物管道，其流體連接該燃料處理總成與該緩衝槽；一回流管道，其流體連接該緩衝槽與該重組物管道；一槽感測器總成，其經建構以偵測該緩衝槽中之壓力；一控制總成，其經建構以至少部分基於該緩衝槽中偵測之壓力而在該運轉模式與該待用模式之間操作該燃料處理總成；及一回流閥總成，其經建構以管理該回流管道中之流量，該控制總成經建構以引導該回流閥總成以當該燃料處理總成處於該待用模式時允許該產物氫氣流自該緩衝槽流動至該重組物管道。
  14. 如申請專利範圍第13項之總成，其中該控制總成經建構以引導該回流總成以當該燃料處理總成處於該待用模式時允許該產物氫氣流以一或多個預定時間間隔自該緩衝槽流動至該重組物管道。
  15. 如申請專利範圍第14項之總成，其中該控制總成經建構以引導該回流總成以當該燃料處理總成處於該待用模式時允許該產物氫氣流以該一或多個預定時間間隔而歷時一預定持續時間的自該緩衝槽流動至該重組物管道。
  16. 如申請專利範圍第13項之總成，其中該回流閥總成包括至少一閥，該至少一閥經建構以在以下兩者之間操作：一開啟位置，其中來自該緩衝槽之該產物氫氣流流動通過該回流管道且流入該重組物管道中；及一關閉位置，其中來自該緩衝槽之該產物氫氣流並不會流動通過該回流管道且流入該重組物管道中。
  17. 如申請專利範圍第16項之總成，其中該控制總成經建構以在該燃料處理總成處於該待用模式時移動該至少一閥至該開啟位置歷時一預定持 續時間。
  18. 如申請專利範圍第17項之總成，其中該控制總成經建構以在該燃料處理總成處於該待用模式時以一或多個預定時間間隔而歷時一預定持續時間的移動該至少一閥至該開啟位置。
  19. 如申請專利範圍第16項之總成，其中該控制總成經建構以在該燃料處理總成處於該待用模式時以一或多個預定時間間隔移動該至少一閥至該開啟位置。
  20. 如申請專利範圍第13項之總成，其進一步包含與該氫氣生成區域及該一或多個氫氣選擇性膜進行熱連通之複數個加熱器，其中該控制總成經建構以操作該等複數個加熱器以當該燃料處理總成處於該待用模式時將該氫氣生成區域及該一或多個氫氣選擇性膜維持於一預定溫度範圍內。
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