TWM355461U - Solar cell - Google Patents

Solar cell Download PDF

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Publication number
TWM355461U
TWM355461U TW97222085U TW97222085U TWM355461U TW M355461 U TWM355461 U TW M355461U TW 97222085 U TW97222085 U TW 97222085U TW 97222085 U TW97222085 U TW 97222085U TW M355461 U TWM355461 U TW M355461U
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Taiwan
Prior art keywords
solar cell
semiconductor
unit
battery
substrate
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TW97222085U
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Chinese (zh)
Inventor
Wen-Yih Liao
Shu-Yun Feng
Shao-Chung Hsu
Ming-Hsien Wu
Chia-Ling Li
Mu-Tao Chu
Wen-Yung Yeh
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Ind Tech Res Inst
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Priority to TW97222085U priority Critical patent/TWM355461U/en
Publication of TWM355461U publication Critical patent/TWM355461U/en

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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

A solar cell is provided and includes a heat dissipation substrate, a cell unit and a thermoelectric element. The heat dissipation substrate includes a metal. The cell unit is disposed on a surface of the heat dissipation substrate and between the heat dissipation substrate and the cell unit, and the thermoelectric element generates current by using a temperature difference between a side adjacent to the cell unit and another side adjacent to the heat dissipation substrate.

Description

M355461 五、新型說明: 【新型所屬之技術領域】 ,且特別是有關於 電池。 本創作是有關於一種太陽能電池 種具有光伏效應與熱電效應的太陽能 【先前技術】 太陽能是-種永不耗盡且無污染的能源,在解 石化能源所面臨的污染與短缺的問題時,一 的焦點。其中,又以太陽能電池⑽a 目 轉換為電能,喊為目_#重制研究課=將太— —2能電池包域板、電池單如及多個電極。電池 料導體與p解導體,電極分職n型半導 半導體配置於基板上,以形成一 p_N接面。2體= =照射到電池單元時,光子所提供的能 中=激發出來’產生電子侧,電子與;= Μ建㈣響’電洞往電場的方向移動’而電子則往 1此¥,以導線將—負載(1°ad)與太陽能電 就會有電流流過負載,這就是太陽能 電池發電的原理,又稱為光伏效應。 【新型内容】 能電池,其具有良好的光電轉換 本創作提供一種太陽 效率與熱電轉換效率。 M355461 元以種太陽能電池’包括散熱基板、電池單 。散熱基板的材料為金屬。電池單元配置 。熱電單元配置於散熱基板之第-表面上, 芯基板與電池單元之間,其中熱電單元利用靠近 端與靠近散熱基板之另—端之_溫度差產M355461 V. New description: [New technical field], and especially related to batteries. This creation is about a kind of solar cell with solar effect and thermoelectric effect. [Prior Art] Solar energy is an energy that never runs out and is not polluted. When it comes to the problem of pollution and shortage faced by petrochemical energy, Focus. Among them, the solar cell (10) a is converted into electric energy, shouting for the purpose _# remake research class = will be too - 2 energy battery board, battery single and multiple electrodes. The battery material conductor and the p-de-conductor are disposed on the substrate to form a p_N junction. 2 body = = when irradiated to the battery unit, the energy provided by the photon = excited to generate 'electronic side, electrons and; = Μ (4) ringing 'the hole moves in the direction of the electric field' and the electrons go to 1 here to The wire will load (1 °ad) and solar power will have current flowing through the load, which is the principle of solar cell power generation, also known as photovoltaic effect. [New content] Energy battery, which has good photoelectric conversion. This creation provides a solar efficiency and thermoelectric conversion efficiency. M355461 yuan is a type of solar cell' including a heat sink substrate and a battery sheet. The material of the heat dissipation substrate is metal. Battery unit configuration. The thermoelectric unit is disposed on the first surface of the heat dissipation substrate, between the core substrate and the battery unit, wherein the thermoelectric unit utilizes a temperature difference between the near end and the other end of the heat dissipation substrate.

‘ //1L ^ if作錢!^種^財導體的太陽料池,包括 凰…二、^電池單元以及熱電單元。散熱基板的材料為金 屬。電> 早70配置於散熱基板上。熱電單元配置於散執基 板之第-表面上’且位於散熱基板與電池單元之間,=中 熱電料彻靠近電池單元之—端與#近散熱基板之^一 端之間的溫度差產生電流。 在本創作之一實施例中,上述之散熱基板的材料包括 銀、銅、鋁、鎳、金或其合金。 在本創作之一實施例中,上述之太陽能電池更包括陶 瓷材料層,其位於散熱基板之第二表面上。 在本創作之一實施例中,上述之太陽能電池更包括複 合材料層,其位於散熱基板之第二表面上。 在本創作之一實施例中,上述之電池單元的材料包括 IV族元素、III-V族材料或II-VI族材料。 在本創作之一實施例中’上述之電池單元的材料包括‘ //1L ^ if for money! ^The solar cell of the kind of conductor, including the phoenix...2, the battery unit and the thermoelectric unit. The material of the heat sink substrate is metal. Electric > Early 70 is placed on the heat sink substrate. The thermoelectric unit is disposed on the first surface of the diffusing substrate and is located between the heat dissipating substrate and the battery unit, and the temperature difference between the end of the thermoelectric material close to the battery unit and the end of the # near heat dissipating substrate generates a current. In an embodiment of the present invention, the material of the heat dissipation substrate comprises silver, copper, aluminum, nickel, gold or an alloy thereof. In an embodiment of the present invention, the solar cell further includes a ceramic material layer on the second surface of the heat dissipation substrate. In an embodiment of the present invention, the solar cell further includes a composite material layer on the second surface of the heat dissipation substrate. In an embodiment of the present invention, the material of the battery unit includes a Group IV element, a III-V material, or a II-VI material. In an embodiment of the present invention, the material of the battery unit described above includes

Si、SiGe、GaN、GaAs、GaP 或 CuInGaSe。 在本創作之一實施例中,上述之熱電單元的材料包括 Bi2Te3、PbTe、SiGe、CoSb3 或 La3Te4。 M355461 施例中,上述之電池單元與熱電單元 在本創作之 包括相同材料。 元 在本創作之—實施例中,上述之電池單元與熱電單 包括相同的三五族半導體材料。 束道創作之—實施例中’上述之電池單元包括一p型 半導體與一]Si型半導體。 創作之—實施例中,上述之熱電單元包括 半‘體與一 N型半導體。 之—實施例中’上述之熱電單元的p型半導 體/、N型半導體分別與散熱基板接觸。 個聚作實施例中’上述之太陽能電池更包括多 卞九7L件,聚光元件配置於電池單元上。 包括=創作Γ實施射,上述之聚光元件的底面形狀 匕祜固形、三角形、方形或六角形。 ^ 列。在本_之—實施财,上叙料元件呈陣列排 折射上叙料林為具有單一 射層,抗,施例中,上述之聚光元件更包括抗反 也反射層配置於透鏡上。 之—實施例中,上述之透鏡具有微米尺寸。 的電c上述之電池單元與熱電單元 在本創作之一實施例中,上述之電池單元與熱電單元 5 M355461 各自具有獨立的電極。 在本創作之一實施例中,太陽能電池更包括多個散熱 管路’散熱管路配置於散熱基板之第二表面上。 在本創作之一實施例中,上述之散熱管路中包括水、 液態氮、液態氦、空氣或氮氣。 基於上述,本創作之太陽能電池的散熱基板具有良好 的政熱效率,使得電池單元與散熱基板之間具有溫度差,Si, SiGe, GaN, GaAs, GaP or CuInGaSe. In an embodiment of the present invention, the material of the thermoelectric unit described above comprises Bi2Te3, PbTe, SiGe, CoSb3 or La3Te4. In the example of M355461, the above battery unit and the thermoelectric unit include the same material in the present creation. In the present invention, the battery unit and the thermoelectric unit include the same three-five semiconductor materials. In the embodiment of the invention, the battery unit described above includes a p-type semiconductor and a silicon-type semiconductor. In an embodiment, the thermoelectric unit comprises a semi-body and an N-type semiconductor. In the embodiment, the p-type semiconductor/n-type semiconductor of the thermoelectric unit described above is in contact with the heat dissipation substrate. In the above embodiment, the solar cell further comprises a plurality of nine-seven-liter LL, and the concentrating element is disposed on the battery unit. Including the creation of the Γ, the bottom surface of the above concentrating element has a shape of a tamped shape, a triangle shape, a square shape or a hexagon shape. ^ Column. In the implementation of the present invention, the upper element is arranged in an array. The refractory forest has a single shot layer. In the embodiment, the concentrating element further includes an anti-reflection layer and a reflective layer disposed on the lens. In the embodiment, the lens described above has a micron size. The battery unit and the thermoelectric unit described above In one embodiment of the present invention, the battery unit and the thermoelectric unit 5 M355461 each have independent electrodes. In one embodiment of the present invention, the solar cell further includes a plurality of heat dissipating conduits. The heat dissipating conduit is disposed on the second surface of the heat dissipating substrate. In an embodiment of the present invention, the heat dissipation pipeline includes water, liquid nitrogen, liquid helium, air or nitrogen. Based on the above, the heat dissipation substrate of the solar cell of the present invention has good thermal efficiency, so that there is a temperature difference between the battery unit and the heat dissipation substrate.

分別為熱端與冷端。如此一來,介於電池單元與散熱基板 之間的熱電單元能夠藉由所述溫度差產生電流,即所謂的 熱電效應(又稱西貝克效應,Seebeck effect)。故,本創作 之土陽,電池具有良好的光電轉換效率與熱電轉換效率, 使=太陽能電池具有較大的輸出功率。此外,散熱基板使 太陽能電池能在適當的溫度下運作,故太陽能電池 長的使用壽命。 又 為讓本創作之上述特徵和優點能更明顯易懂 舉實施例,並配合所附圖式作詳細說明如下。They are hot and cold. In this way, the thermoelectric unit interposed between the battery unit and the heat dissipating substrate can generate a current by the temperature difference, so-called thermoelectric effect (also known as Seebeck effect). Therefore, the earth of this creation, the battery has good photoelectric conversion efficiency and thermoelectric conversion efficiency, so that = solar cell has a large output power. In addition, the heat-dissipating substrate allows the solar cell to operate at an appropriate temperature, so that the solar cell has a long service life. The above-described features and advantages of the present invention will be more apparent and understood from the following description.

【實施方式】 之-實施_-種太陽能電池的剖 圖1是依照本創作 面示意圖。 基板100、熱電單元11G、電池單元12G、第^: 及箆二電極118。 顿116 散熱基板⑽的材料包括金屬,例如是具有高 請參照圖1單=施例中,太陽能電池1〇包括散埶 早凡110、電池單元120、第一雷 …、 以 及第二電極118 導熱係 6 M355461 數的銀、銅、鋁、鎳、金或其他適合之金屬或其合金。[Embodiment] FIG. 1 is a schematic view of a solar cell according to the present invention. The substrate 100, the thermoelectric unit 11G, the battery unit 12G, the first and second electrodes 118. The material of the heat sink substrate (10) includes metal, for example, it has a high height. Please refer to FIG. 1 in the single embodiment. The solar cell 1 includes a heat sink 110, a battery unit 120, a first mine, and a second electrode 118. A quantity of 6 M355461 silver, copper, aluminum, nickel, gold or other suitable metal or alloy thereof.

熱電單元110配置於散熱基板100之第一表面1〇〇a 上’且位於散熱基板100與電池單元120之間。熱電單元 110包括N型半導體112與P型半導體114,N型半導體 112與P型半導體114分別與散熱基板100接觸。換言之, 散熱基板100例如是作為熱電單元11〇的N型半導體n2 與P型半導體114之間的導流金屬。n型半導體112與p 型半導體114的材料例如是Bi2Te3、pbTe、SiGe、c〇Sb3 或 La<3Te4。 電池單元120配置於熱電單元11()上,其包括n型半 導體122與p型半導體124。N型半導體122與P型半導 體124的材料例如是IV族(如單晶矽(single町制 〇n)、夕晶%、非晶石夕(amorphous silicon)、石夕化鍺 (SlGe))、III-V族(如氮化鎵(GaN)、石申化鎵(GaAs)、礙化鎵 (Gaf)、罐化銦(InP)、磷化鎵銦(InGa巧等)或π νι族(如碲 =録(CdTe)、錮銅硒(cuinse2)、銅銦鎵硒(CuInGaSe) ^)。因此,太陽能電池1〇例如是單晶矽太陽能電池、多 、=夕太陽旎電池、非晶矽太陽能電池(又稱太陽能電 池。族半導體太陽能電池或H-VI族半導體太陽能電 ίιι-°ν特,—提的是,在本實施例中,太陽能電池10例如是 知半導體太陽能電池,且電池單元120與埶電單元 括相一族半導體削 辦;池單7012〇與熱電單元110包括除了m_v族半導 ";斗以外的相同材料,例如siGe。 M355461 並聯在110例如是與電池單元u。 p U此笫$極116電性連接熱 U0 半導體m以及電池單元12〇之?型早凡〇之N型 極118電性連接熱電單元no之p型半導,114第二電 單元m之ν型半導體122 t、^體114以及電池 與電池單元12〇並聯時,電極116^兄電元u〇 在本只施例中,熱電單元n〇與電池 刀 ί::電層129 ’其材質例如是氧切、氮切或i:: m之Μ而"n u 其陣列排列於電池單元 聚光二3。具有 ==寸可广是微米尺寸。詳言之, 之為弁rfMM目i:人 &底面13〇a與電池單元120 广貼合。底面咖形狀例如是圓形、三角形、 =或六角形’如圖2A至圖2D所示。在 n" r ^ 132 ,反射層134位於透鏡132上。透鏡132 ,璃或塑膠等相關正折射性材料(折射率大於空氣的折射 率),且越退離電池單元12〇的折射率越低。如此—來,透 鏡132以及抗反射層134能防止進入聚光元件13〇的光線 經由折射或反射而損失,以Α幅提升進人電池單元120的 光能。特別注意的是,在圖!中是以具有漸變折射率的透 鏡132為例’故將透鏡132繪示為多層結構,但在另一實 M355461 施例中,透鏡132也可以具有單一折射率。 是以inr是,在圖1所績示的太陽能電池10中, 太^電池10包括―個熱電單元UG為 實施财,如圖3所示,太陽能電池丨 包^ 一 熱電單元⑽、_,每一個熱電單元施 ==112與巧半導體114’且熱電單元UOa的P型 .-4與熱電單元議的]^型半導體⑴相鄰且八 個熱電單元U〇a、服藉由金屬層i 二 電=以與電池單元12G產生之電壓匹配,進 =,電=與r單元12°產生的電流並聯後再輸出 fot/ 構件皆與圖1所料的太陽能電池 10的構件以及材質相似,於此不贅述。 此外,在圖1所繪示的太陽能電池10中,是以 能電池10的熱電單元110與電池單元12〇並聯為例,但 發明不限於此。舉例來說,在又一實施财,如圖4所示, 太陽能電池10b的熱電單元110與電池單元12〇例如是各 自具有獨立的電極’因此熱電單幻10 自輸出電流,再各自和其他元件連接。在本實施例中^ 電單兀110的N型半導體112與P料導體114分別電性 連接至第-電極H6與第二電極118,而電池單元12〇的 N型半導體122與p型半導體124分別電性連接至第三電 極126以及第四電極128。太陽能電池的其他構件皆 與圖1所繪示的太陽能電池10的構件以及材質相似,於此 不贅述。 ' M355461The thermoelectric unit 110 is disposed on the first surface 1A of the heat dissipation substrate 100 and is located between the heat dissipation substrate 100 and the battery unit 120. The thermoelectric unit 110 includes an N-type semiconductor 112 and a P-type semiconductor 114, and the N-type semiconductor 112 and the P-type semiconductor 114 are in contact with the heat dissipation substrate 100, respectively. In other words, the heat dissipation substrate 100 is, for example, a flow guiding metal between the N-type semiconductor n2 and the P-type semiconductor 114 as the thermoelectric unit 11A. The material of the n-type semiconductor 112 and the p-type semiconductor 114 is, for example, Bi2Te3, pbTe, SiGe, c〇Sb3 or La<3Te4. The battery unit 120 is disposed on the thermoelectric unit 11 (), and includes an n-type semiconductor 122 and a p-type semiconductor 124. The material of the N-type semiconductor 122 and the P-type semiconductor 124 is, for example, a group IV (for example, single crystal germanium (manufactured by Single Town, 〇n), smectite%, amorphous silicon, and stellite (SlGe)), III. -V family (such as gallium nitride (GaN), gallium arsenide (GaAs), gallium (Gaf), indium (InP), gallium indium phosphide (InGa, etc.) or π νι (such as 碲= CdTe, cuinse 2, CuInGaSe ^). Therefore, the solar cell 1 is, for example, a single crystal germanium solar cell, a multi-, a solar cell, an amorphous germanium solar cell. (also referred to as solar cell. Group semiconductor solar cell or H-VI semiconductor solar power), in the present embodiment, the solar cell 10 is, for example, a semiconductor solar cell, and the battery unit 120 The power unit includes a phase semiconductor package; the cell 7012 and the thermoelectric unit 110 include the same material except for the m_v family semi-conductor, such as siGe. The M355461 is connected in parallel with 110, for example, with the battery unit u.笫$ pole 116 is electrically connected to the hot U0 semiconductor m and the battery unit 12 is the type of the N-type pole 118 electric When the p-type semi-conductor of the thermoelectric unit no is connected, the ν-type semiconductor 122 t of the second electric unit m, the body 114, and the battery are connected in parallel with the battery unit 12, the electrode 116 is the only embodiment. In the middle, the thermoelectric unit n〇 and the battery knife ί:: the electric layer 129 'its material is, for example, oxygen cut, nitrogen cut or i:: m and "nu array arranged in the battery unit concentrating two 3. With == inch It can be widely micron size. In detail, it is 弁rfMM mesh i: human & bottom surface 13〇a is widely attached to the battery unit 120. The bottom surface coffee shape is, for example, a circle, a triangle, a = or a hexagonal shape as shown in Fig. 2A As shown in Fig. 2D, at n" r ^ 132 , the reflective layer 134 is located on the lens 132. The lens 132, the glass or plastic or the like is a positive refractive material (the refractive index is greater than the refractive index of the air), and the more the battery unit 12 is withdrawn. The lower the refractive index of the crucible, the lens 132 and the anti-reflection layer 134 can prevent the light entering the light-collecting element 13 from being lost by refraction or reflection, and the light energy entering the battery unit 120 can be increased by the web. In the figure!, the lens 132 having a graded refractive index is taken as an example. 132 is illustrated as a multilayer structure, but in another embodiment of the M355461, the lens 132 may have a single refractive index. In the case of inr is, in the solar cell 10 shown in FIG. 1, the battery 10 includes one The thermoelectric unit UG is implemented, as shown in FIG. 3, the solar cell packs a thermoelectric unit (10), _, each thermoelectric unit applies ==112 with the smart semiconductor 114' and the thermoelectric unit UOa P-type .-4 and the thermoelectric The semiconductors (1) of the unit are adjacent to each other and eight thermoelectric units U〇a, by the metal layer i, the second voltage = matching with the voltage generated by the battery unit 12G, the input =, the electric = the same as the r unit 12 ° The output of the fot/component after the current is connected in parallel is similar to the components and materials of the solar cell 10 as shown in FIG. 1, and will not be described here. Further, in the solar battery 10 shown in Fig. 1, the thermoelectric unit 110 of the battery 10 is connected in parallel with the battery unit 12, but the invention is not limited thereto. For example, in another implementation, as shown in FIG. 4, the thermoelectric unit 110 and the battery unit 12 of the solar cell 10b have, for example, separate electrodes, respectively, so that the thermoelectric single-shot 10 self-output current, and then each other and other components connection. In the present embodiment, the N-type semiconductor 112 and the P-material conductor 114 of the electric unit 110 are electrically connected to the first electrode H6 and the second electrode 118, respectively, and the N-type semiconductor 122 and the p-type semiconductor 124 of the battery unit 12 are electrically connected. They are electrically connected to the third electrode 126 and the fourth electrode 128, respectively. Other components of the solar cell are similar to those of the solar cell 10 illustrated in Fig. 1, and will not be described herein. ' M355461

再者,在再一實施例中,如圖5所示,太陽能電池i〇c 更包括陶瓷材料層140 ’其位於散熱基板1〇〇之第二表面 l〇〇b上’其中第二表面i〇〇b與第一表面i〇〇a相對。太陽 月匕電池10c的其他構件皆與圖1所繪示的太陽能電池1 〇 的構件以及材質相似’於此不資述。此外,在一實施例中, 也可以在散熱基板100之第二表面100b上配置複合材料層 (未繪示)。再者,為了進一步提升散熱基板100的散熱效 率’以可以在散熱基板100之第二表面100b上配置多個散 熱管路(未繪示),散熱管路中包括水、液態氮、液態氦、 空氣或氮氣。 以下,以圖6至圖8詳細說明圖丨之太陽能電池1〇 的製造方法。 4參照圖6,首先,提供一散熱基板1〇〇。散熱基板 100的材料包括金屬,例如是具有高導熱係數的銀、銅、 =、鎳、金或其他適合之金屬或合金。接著,在散熱基板 =上形成熱電單it 11G。熱電單s 11G的形成方法例如是 f政熱基板_上形縣導體層 =頂案化以及摻雜製程,以分別於散熱餘 成N5L半導體112與p型半導體114。 ,在散熱基板⑽上形成介電層 f θ Λμ 、形成方法例如是化學氣相沉積法,其材 貝例如^切、氮切或其他介電材料。 120的开f電層129上形成電池單元120。電池單元 ^ 、列如是在介電層129上形成半導體層(未繪 M355461 示),而後對半導體層進行圖幸 介電層129上形成N型半導^ S3雜製程,以分別於 卞守菔122與P型半導艚丨24。 請參照圖8,而後,在雷姊罝-等體 依序带電池早兀120之受光面120a上 /層(未緣示),其折射率例如是隨著 。接著’偏嶋材料層,以形成 种,^細糾贿等方式 ΐ 崎134,卿❹個聚光元件130。 、”之’开》成第一電極116與第二電極118,以士成太 陽能電池10的製作。第一雷搞〗μ十以老 兀成太 夕Mm# 弟電極116電性連接熱電單元11〇 _ 31半導體112與電池單元12〇之p型半導體124,第 j極118電性連接熱電單元11〇之?型半導體ιΐ4與電 池早兀120之N型半導體122。 oo在上述的實施例中,聚光元件13〇使電池單元12〇之 面積内的光子數目增加,以提升太陽能電池⑺的光伏 =應°且’聚光元件13〇的使时產生大量廢熱,使電池 單το m的溫度升高。然而,散熱基板1〇〇為具有高導熱 係數的金屬基板,故散熱基板1⑻能保持低溫。因此,配 置於散熱基板1GG與電池單元⑽之間熱電單幻1〇會發 生熱電效應,也就是熱電單元11〇利用靠近電池單元12〇 之熱端與靠近散熱基板1〇〇之冷端之間的溫度差產生電 二’、進而將廢熱轉換成電能。換言之,太陽能電池1〇兼具 光伏效應與熱電效應,且此兩種效應因聚光元件13〇的使 用而增強。因此’太陽能電池10具有高光電轉換效率與高 熱電轉換效率,為具有高輸出功率的元件。此外,散熱基Furthermore, in still another embodiment, as shown in FIG. 5, the solar cell i〇c further includes a ceramic material layer 140' on the second surface 10b of the heat dissipation substrate 1', wherein the second surface i 〇〇b is opposite to the first surface i〇〇a. The other components of the solar moon battery 10c are similar to those of the solar cell 1 图 shown in Fig. 1 and will not be described herein. In addition, in an embodiment, a composite material layer (not shown) may be disposed on the second surface 100b of the heat dissipation substrate 100. In addition, in order to further improve the heat dissipation efficiency of the heat dissipation substrate 100, a plurality of heat dissipation pipelines (not shown) may be disposed on the second surface 100b of the heat dissipation substrate 100, and the heat dissipation pipeline includes water, liquid nitrogen, liquid helium, Air or nitrogen. Hereinafter, a method of manufacturing the solar cell 1A of the drawing will be described in detail with reference to Figs. 6 to 8 . 4 Referring to FIG. 6, first, a heat dissipation substrate 1A is provided. The material of the heat dissipation substrate 100 includes a metal such as silver, copper, =, nickel, gold or other suitable metal or alloy having a high thermal conductivity. Next, a thermoelectric single it 11G is formed on the heat dissipation substrate =. The method for forming the thermoelectric single s 11G is, for example, a f-thermal substrate _ a top-level conductor layer = a topping and a doping process to separately dissipate the N5L semiconductor 112 and the p-type semiconductor 114 from heat dissipation. A dielectric layer f θ Λμ is formed on the heat dissipation substrate (10), and the formation method is, for example, a chemical vapor deposition method, such as cutting, nitrogen cutting or other dielectric material. A battery unit 120 is formed on the open electrical layer 129 of 120. The battery unit ^, the column is formed on the dielectric layer 129 (not shown in M355461), and then the semiconductor layer is formed on the dielectric layer 129 to form an N-type semi-conducting S 3 impurity process, respectively, to 卞 菔 122 122 Type semi-conductive 艚丨24. Referring to Fig. 8, then, in the Thunder-equivalent body, the light-receiving surface 120a/layer (not shown) of the battery 120 is sequentially placed, and its refractive index is, for example, followed. Then, the material layer is hemiplegic to form a species, and the method of fine bribery, etc., ΐ 134, and a concentrating element 130. The "open" into the first electrode 116 and the second electrode 118, the production of the solar cell 10 of the Shishi. The first Lei engages in the 〖μ10 to the old 兀成太夕 Mm# 弟 electrode 116 is electrically connected to the thermoelectric unit 11半导体 _ 31 semiconductor 112 and battery unit 12 p p-type semiconductor 124, the j-th pole 118 is electrically connected to the thermoelectric unit 11 ? type semiconductor ΐ 4 and the battery N 半导体 120 of the N-type semiconductor 122. oo in the above embodiment The concentrating element 13 increases the number of photons in the area of the battery unit 12 to increase the photovoltaic value of the solar cell (7) and the temperature of the concentrating element 13 产生 generates a large amount of waste heat, so that the temperature of the battery το m However, since the heat dissipating substrate 1 is a metal substrate having a high thermal conductivity, the heat dissipating substrate 1 (8) can be kept at a low temperature. Therefore, a thermoelectric effect occurs when the thermoelectric substrate is disposed between the heat dissipating substrate 1GG and the battery unit (10). That is, the thermoelectric unit 11 uses the temperature difference between the hot end near the battery unit 12 and the cold end near the heat-dissipating substrate 1 to generate electricity, thereby converting waste heat into electrical energy. In other words, the solar battery has both V effect and pyroelectric effect, and the effect due to these two converging element used 13〇 is enhanced. Thus' solar cell 10 has a high photoelectric conversion efficiency and high thermoelectric conversion efficiency, a high output power element. Further, the heat radiation substrate

M355461 =4有氏= 的散熱功能’使得電池單元能在合適的溫 具女^ )運作,能防止電池單元120損毁,以延 長太1¼牝電池10的使用壽命。 上所述,本創作之太陽能電池的散熱基板具有良好 的,'、、、=率,使得介於電池單元與散熱基板之間的熱電單 ♦月b夠藉由熱電效應產生電流。如此一來,熱電單元能將 電池單元所產生的廢熱轉換為電能,使得太陽能電池具有 良=的熱電轉換效率。a,散熱基板的散熱功能使電池單 元月b在合適的溫度中運作,以解決太陽能電池因使用聚光 元件而提如老化的問題。故,本創作之太陽能電池具有高 輸出功率以及較長的使用壽命,為具有高經濟價值的太陽 能電池。 雖然本創作已以實施例揭露如上,然其並非用以限定 本創作’任何所屬技術領域中具有通常知識者,在不脫離 本創作之精神和範圍内,當可作些許之更動與潤飾,故本 創作之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1是依照本創作之一實施例的一種太陽能電池的剖 面不意圖。 圖2A至圖2D分別是依照本創作一實施例之聚光元 件130的上視形狀示意圖。 圖3是依照本創作之另一實施例的一種太陽能電池的 剖面示意圖。 12 M355461 圖4是依照本創作之又一實施例的一種太陽能電池的 剖面示意圖。 圖5是依照本創作之再一實施例的一種太陽能電池的 剖面示意圖。 圖ό至圖8是圖1之太陽能電池的製造流程剖面示意 圖。 【主要元件符號說明】 鲁 10、10a、10b、10c :太陽能電池 100 .散熱基板 100a :第一表面 100b :第二表面 110、110a、110b :熱電單元 112 : N型半導體 114 : P型半導體 116 :第一電極 φ 118 :第二電極 120 :電池單元 120a :受光面 122 : N型半導體 124 :P型半導體 126 :第三電極 12 8 .弟四電極 129 :介電層 13 M355461 130 :聚光元件 130a :底面 132 :透鏡 134 :抗反射層 136 :金屬層 140 :陶瓷材料層M355461 = 4 has a heat dissipation function of 'the battery unit can be operated at the appropriate temperature ^) to prevent the battery unit 120 from being damaged to extend the life of the battery 10 by 11⁄4. As described above, the heat-dissipating substrate of the solar cell of the present invention has a good ',, and = rate, so that the thermoelectricity between the battery cell and the heat-dissipating substrate can generate current by the thermoelectric effect. In this way, the thermoelectric unit can convert the waste heat generated by the battery unit into electric energy, so that the solar battery has good thermoelectric conversion efficiency. a. The heat dissipation function of the heat dissipation substrate allows the battery unit b to operate at a suitable temperature to solve the problem that the solar battery is deteriorated due to the use of the concentrating element. Therefore, the solar cell of the present invention has high output power and long service life, and is a solar cell with high economic value. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention to anyone having ordinary knowledge in the art, and may make some changes and refinements without departing from the spirit and scope of the present invention. The scope of protection of this creation is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of a solar cell in accordance with an embodiment of the present invention. 2A to 2D are respectively top plan views of the concentrating element 130 according to an embodiment of the present invention. Figure 3 is a cross-sectional view of a solar cell in accordance with another embodiment of the present invention. 12 M355461 Figure 4 is a schematic cross-sectional view of a solar cell in accordance with yet another embodiment of the present invention. Figure 5 is a cross-sectional view showing a solar cell in accordance with still another embodiment of the present invention. 8 to 8 are schematic cross-sectional views showing a manufacturing process of the solar cell of Fig. 1. [Description of main component symbols] Lu 10, 10a, 10b, 10c: solar cell 100. heat dissipation substrate 100a: first surface 100b: second surface 110, 110a, 110b: thermoelectric unit 112: N-type semiconductor 114: P-type semiconductor 116 : First electrode φ 118 : Second electrode 120 : Battery unit 120 a : Light-receiving surface 122 : N-type semiconductor 124 : P-type semiconductor 126 : Third electrode 12 8 . Dielectric electrode 129 : Dielectric layer 13 M355461 130 : Concentrating light Element 130a: bottom surface 132: lens 134: anti-reflection layer 136: metal layer 140: ceramic material layer

Claims (1)

M355461 六、申請專利範圍: i·—種太陽能電池,包括: 至少一散熱基板’其材料為金屬; 一電池單元’配置於該散熱基板上;以及 至少一熱電單元,配置於該散熱基板之一第一表面 上,且位於該散熱基板與該電池單元之間,其中該熱電單 兀利用靠近該電池單元之一端與靠近該散熱基板之另—端 之間的溫度差產生電流。 2·如申睛專利範圍第1項所述之太陽能電池,其中該 散熱基板的材料包括銀、銅、鋁、鎳、金或其合金。 ^如申請專利範圍第1項所述之太陽能電池,更包括 陶究材料層’該陶瓷材料層位於該散熱基板之一第二表 面上。 —如申請專利範圍第1項所述之太陽能電池,更包括 複a材料層,邊複合材料層位於該散熱基板之第二表面 上0 I、i_如申請專利範圍第1項所述之太陽能電池,其中該 :’也單元的材料包括IV族元素、ΠΙ_ν族材料或族材 料。 番、t如申請專利範圍第5項所述之太陽能電池,其中該 r、池單元的材料包括Si、SiGe、GaN、GaAs、Gap或 ^ulnGaSe。 7.如申請專利範圍第1項所述之太陽能電池,其中該 ‘、、、電單71 的材料包括 Bi2Te3、PbTe、SiGe、CGSb3 或 La3Te4。 15 M355461 〜i·如申請專·圍第1項所述之太陽能電池,其中該 电,早7〇與該熱電單元包括相同材料。 ^ 1·如帽專利範圍第1項所述之太陽能電池,其中該 電池早元包括—p型半導體與—n型半導體。 讀申,鄕圍第1項所狀太陽能電池,其中 …電早兀包括一P型半導體與一N型半導體。 « 中兮1p1'如申清專利範圍第1〇項所述之太陽能電池,其 該型半導體與㈣财導體分職雜祕板接觸。 接多個聚ί申ί補範圍第Γ項所述之太陽能電池,更包 Λ ^70件’②些聚光轉配置於該電池單元上。 中各辦咖第12 _狀太陽能電池,其 馬形件的底面形狀包括圓形、三角形、方形、六 如申請專利範圍第12 中讀些聚光元件呈陣列排列。躺返之油月匕電池’其 C申:ΐ利範圍第12項所述之太陽能電池,其 繞。 凡匕括具有早—折射率或漸變折射率之透 中各ΐ聚ί申範圍第15項所述之太陽能電池,盆 瘦鏡γγ&件更包括—抗反射層,該抗反射層配置於該 、池單太陽㈣池,其中 18·如申請專利範圍第方式為並聯。 固乐1項所述之太陽能電池,其中 16 M355461 S玄電池單元與該熱電單元各自具有獨立的電極。 19.如申睛專利範圍第1項所述之太1%能電池,更包 括多個散熱管路,該些散熱管路配置於該散熱基板之第二 表面上0 20. 如申請專利範圍第μ項所述之太陽能電池,其 中該些散熱管路中包括水、液態氮、液態氦、空氣或氮氣。 21. —種三五族半導體的太陽能電池,包括:M355461 VI. Patent application scope: i.—a solar cell comprising: at least one heat dissipating substrate 'the material is metal; one battery unit' disposed on the heat dissipating substrate; and at least one thermoelectric unit disposed on one of the heat dissipating substrates The first surface is located between the heat dissipation substrate and the battery unit, wherein the thermoelectric unit generates a current by using a temperature difference between one end of the battery unit and another end of the heat dissipation substrate. 2. The solar cell of claim 1, wherein the material of the heat dissipating substrate comprises silver, copper, aluminum, nickel, gold or an alloy thereof. The solar cell of claim 1, further comprising a ceramic material layer, wherein the ceramic material layer is on a second surface of the heat dissipation substrate. The solar cell of claim 1, further comprising a layer of a composite material on the second surface of the heat dissipation substrate, wherein the solar energy is as described in claim 1 A battery, wherein: the material of the unit also includes a group IV element, a ΠΙ_ν group material or a group material. The solar cell of claim 5, wherein the material of the r and the cell unit comprises Si, SiGe, GaN, GaAs, Gap or ^ulnGaSe. 7. The solar cell of claim 1, wherein the material of the ', , and the electric sheet 71 comprises Bi2Te3, PbTe, SiGe, CGSb3 or La3Te4. 15 M355461 ~i· If you apply for the solar cell described in Item 1, the electricity is 7 years old and includes the same material as the thermoelectric unit. The solar cell of claim 1, wherein the battery comprises -p-type semiconductor and -n-type semiconductor as early as possible. Read the application, the solar cell of the first item, wherein the electric cell comprises a P-type semiconductor and an N-type semiconductor. « 中兮1p1', such as the solar cell described in the first paragraph of the Shenqing patent scope, is in contact with the (four) financial conductors. A plurality of solar cells as described in the above paragraphs are further included, and more than 270 pieces of concentrating light are disposed on the battery unit. In the 12th solar cell of the coffee machine, the shape of the bottom surface of the horse-shaped member includes a circle, a triangle, a square, and a six. As in the patent application, the concentrating elements are arranged in an array. The oily battery of the reclining back ‘C Shen: The solar cell described in item 12 of the profit range, which is wound around. The solar cell of the first aspect of the present invention includes the solar cell of the first aspect of the present invention, wherein the anti-reflective layer is disposed on the solar cell. , pool single sun (four) pool, of which 18 · as the scope of the patent application is parallel. The solar cell according to item 1, wherein the 16 M355461 S-cell battery unit and the thermoelectric unit each have independent electrodes. 19. The 1% energy battery according to claim 1, wherein the heat dissipation pipeline is disposed on the second surface of the heat dissipation substrate. The solar cell of item [1], wherein the heat dissipating pipes include water, liquid nitrogen, liquid helium, air or nitrogen. 21. A solar cell of the three or five semiconductors, including: 至少一散熱基板,其材料為金屬; 一電池單元,配置於該散熱基板上;以及 至少一熱電單元,配置於該散熱基板之一第一表面 上,且=於該散熱基板與該電池單元之間,其中該熱電單 兀利用靠近該電池單元之—端與靠近該散熱基板之另一端 之間的溫度差產生電流。 b处22.如申請專利範圍第21項所述之三五族半導體太 陽此電池’其中該散熱基板的材料包括銀、銅、銘、 金或其合金。 @ 陽能電池二項:述之三五族半導體太 熱基板之-第二表2 料層位於該散 陽44:也如利範圍第21項所述之三五族半導體太 ::::第複合材料層,該複合材料層位於該散 如甲晴寻利範圍第 陽能電池,其中該電池單元與該熱電單::=== 17 M355461 族半導體材料。 26. 如申請專利範圍第21項所述之三五族半導體太 陽能電池,其中該電池單元包括一 P型半導體與一 N型半 導體。 27. 如申請專利範圍第21項所述之三五族半導體太 陽能電池,其中該熱電單元包括一 P型半導體與一 N型半 導體。 28. 如申請專利範圍第27項所述之三五族半導體太 陽能電池,其中該P型半導體與該N型半導體分別與該散 熱基板接觸。 29. 如申請專利範圍第21項所述之三五族半導體太 陽能電池,更包括多個聚光元件,該些聚光元件配置於該 電池單元上。 30. 如申請專利範圍第29項所述之三五族半導體太 陽能電池,其中各該聚光元件的底面形狀包括圓形、三角 形、方形、六角形。 31. 如申請專利範圍第29項所述之三五族半導體太 陽能電池,其中該些聚光元件呈陣列排列。 32. 如申請專利範圍第29項所述之三五族半導體太 陽能電池,其中各該聚光元件包括具有單一折射率或漸變 折射率之透鏡。 33. 如申請專利範圍第32項所述之三五族半導體太 陽能電池,其中各該聚光元件更包括一抗反射層,該抗反 射層配置於該透鏡上。 18 M355461 34. 如申請專利範圍第32項所述之三五族半導體太 陽能電池,其中該透鏡具有微米尺寸。 35. 如申請專利範圍第21項所述之三五族半導體太 陽能電池,其中該電池單元與該熱電單元的電路連接方式 為並聯。 36. 如申請專利範圍第21項所述之三五族半導體太 陽能電池,其中該電池單元與該熱電單元各自具有獨立的 電極。 37. 如申請專利範圍第21項所述之三五族半導體太 陽能電池,更包括多個散熱管路,該些散熱管路配置於該 散熱基板之第二表面上。 38. 如申請專利範圍第37項所述之三五族半導體太 陽能電池,其中該些散熱管路中包括水、液態氮、液態氦、 空氣或氮氣。At least one heat dissipating substrate, the material of which is metal; a battery unit disposed on the heat dissipating substrate; and at least one thermoelectric unit disposed on the first surface of the heat dissipating substrate, and wherein the heat dissipating substrate and the battery unit And wherein the thermoelectric unit generates a current by using a temperature difference between the end adjacent to the battery unit and the other end adjacent to the heat dissipation substrate. The material of the heat-dissipating substrate comprises silver, copper, inscription, gold or an alloy thereof. @阳能电池二项: The three or five semiconductors are too hot substrate - the second table 2 The material layer is located in the Sanyang 44: also the three-five semiconductors mentioned in the 21st item of the profit range:::: a composite material layer, the composite material layer being located in the dispersion of a solar cell, wherein the battery unit and the thermoelectric sheet::=== 17 M355461 semiconductor material. 26. The three-five-semiconductor semiconductor solar cell of claim 21, wherein the battery cell comprises a P-type semiconductor and an N-type semiconductor. 27. The Group of three or five semiconductor solar cells according to claim 21, wherein the thermoelectric unit comprises a P-type semiconductor and an N-type semiconductor. 28. The Group of three or five semiconductor solar cells according to claim 27, wherein the P-type semiconductor and the N-type semiconductor are in contact with the heat-dissipating substrate, respectively. 29. The three-five-group semiconductor solar cell of claim 21, further comprising a plurality of concentrating elements, the concentrating elements being disposed on the battery unit. 30. The three-five-semiconductor semiconductor solar cell of claim 29, wherein the bottom surface shape of each of the concentrating elements comprises a circle, a triangle, a square, and a hexagon. 31. The Group of three or five semiconductor solar cells according to claim 29, wherein the concentrating elements are arranged in an array. 32. The three-five-semiconductor semiconductor solar cell of claim 29, wherein each of the concentrating elements comprises a lens having a single refractive index or a graded refractive index. 33. The three-five-semiconductor semiconductor solar cell of claim 32, wherein each of the concentrating elements further comprises an anti-reflective layer disposed on the lens. 18 M355461 34. The three or five semiconductor solar cells of claim 32, wherein the lens has a micron size. 35. The three-five-semiconductor semiconductor solar cell of claim 21, wherein the battery unit and the thermoelectric unit are connected in parallel. 36. The Group of three or five semiconductor solar cells of claim 21, wherein the battery unit and the thermoelectric unit each have a separate electrode. 37. The three-five-semiconductor solar cell according to claim 21, further comprising a plurality of heat dissipating pipes disposed on the second surface of the heat dissipating substrate. 38. The three or five semiconductor solar cells of claim 37, wherein the heat dissipating conduits comprise water, liquid nitrogen, liquid helium, air or nitrogen. 1919
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398009B (en) * 2009-11-24 2013-06-01 Univ Chang Gung Spotlight type solar photovoltaic module
TWI449197B (en) * 2009-10-28 2014-08-11 Physics Hsu Solar thermal power generator
TWI488324B (en) * 2012-09-18 2015-06-11 Motech Ind Inc Solar cell, module comprising the same, method of manufacturing the same and method of manufacturing dielectric layer of the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449197B (en) * 2009-10-28 2014-08-11 Physics Hsu Solar thermal power generator
TWI398009B (en) * 2009-11-24 2013-06-01 Univ Chang Gung Spotlight type solar photovoltaic module
TWI488324B (en) * 2012-09-18 2015-06-11 Motech Ind Inc Solar cell, module comprising the same, method of manufacturing the same and method of manufacturing dielectric layer of the same

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