TWI884358B - 化學鍵結法、封裝型電子元件及電子裝置之混合接合法 - Google Patents

化學鍵結法、封裝型電子元件及電子裝置之混合接合法 Download PDF

Info

Publication number
TWI884358B
TWI884358B TW111104686A TW111104686A TWI884358B TW I884358 B TWI884358 B TW I884358B TW 111104686 A TW111104686 A TW 111104686A TW 111104686 A TW111104686 A TW 111104686A TW I884358 B TWI884358 B TW I884358B
Authority
TW
Taiwan
Prior art keywords
bonding
film
aforementioned
thin film
substrates
Prior art date
Application number
TW111104686A
Other languages
English (en)
Chinese (zh)
Other versions
TW202245164A (zh
Inventor
齋藤孝之
森脇崇行
島津武仁
魚本幸
Original Assignee
日商佳能安內華股份有限公司
國立大學法人東北大學
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商佳能安內華股份有限公司, 國立大學法人東北大學 filed Critical 日商佳能安內華股份有限公司
Publication of TW202245164A publication Critical patent/TW202245164A/zh
Application granted granted Critical
Publication of TWI884358B publication Critical patent/TWI884358B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/43—Gaseous fillings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60—Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
    • H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/011—Manufacture or treatment of pads or other interconnections to be direct bonded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/102—Controlling the environment during the bonding, e.g. the temperature or pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Manufacturing & Machinery (AREA)
TW111104686A 2021-02-10 2022-02-09 化學鍵結法、封裝型電子元件及電子裝置之混合接合法 TWI884358B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
WOPCT/JP2021/004913 2021-02-10
PCT/JP2021/004913 WO2022172349A1 (ja) 2021-02-10 2021-02-10 化学結合法及びパッケージ型電子部品
PCT/JP2022/004758 WO2022172902A1 (ja) 2021-02-10 2022-02-07 化学結合法及びパッケージ型電子部品，並びに電子デバイスのハイブリッド接合法
WOPCT/JP2022/004758 2022-02-07

Publications (2)

Publication Number Publication Date
TW202245164A TW202245164A (zh) 2022-11-16
TWI884358B true TWI884358B (zh) 2025-05-21

Family

ID=82837841

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111104686A TWI884358B (zh) 2021-02-10 2022-02-09 化學鍵結法、封裝型電子元件及電子裝置之混合接合法

Country Status (7)

Country Link
US (1) US11916038B2 (https=)
EP (1) EP4292747A4 (https=)
JP (1) JP7165342B1 (https=)
KR (1) KR20230143167A (https=)
CN (1) CN115443203B (https=)
TW (1) TWI884358B (https=)
WO (2) WO2022172349A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12532780B2 (en) * 2022-08-22 2026-01-20 Micron Technology, Inc. Hybrid bonding for semiconductor device assemblies
EP4350329A1 (en) * 2022-10-06 2024-04-10 The Procter & Gamble Company Methods for quantification of solvent-substrate interactions
WO2025169311A1 (ja) * 2024-02-06 2025-08-14 国立大学法人東北大学 マイクロ流路デバイス及びマイクロ流路デバイスの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012023326A (ja) * 2009-09-04 2012-02-02 Sumitomo Chemical Co Ltd 半導体基板、電界効果トランジスタ、集積回路、及び半導体基板の製造方法
JP2014022699A (ja) * 2012-07-24 2014-02-03 Nippon Telegr & Teleph Corp <Ntt> パッケージおよびその製造方法
JP2014221492A (ja) * 2014-06-19 2014-11-27 株式会社ムサシノエンジニアリング 原子拡散接合方法
TW201946233A (zh) * 2018-04-30 2019-12-01 台灣積體電路製造股份有限公司 封裝及其形成方法
TW202101808A (zh) * 2019-06-11 2021-01-01 美商菲絲博克科技有限公司 採用可變形的觸點和預先施加的底部填充物用於經由雷射來接合led裝置

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS541661U (https=) 1977-06-06 1979-01-08
JPS5569964U (https=) 1978-11-09 1980-05-14
US5372851A (en) * 1991-12-16 1994-12-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a chemically adsorbed film
JP3704258B2 (ja) * 1998-09-10 2005-10-12 松下電器産業株式会社 薄膜形成方法
TWI330269B (en) * 2002-12-27 2010-09-11 Semiconductor Energy Lab Separating method
WO2005055293A1 (ja) * 2003-12-02 2005-06-16 Bondtech Inc. 接合方法及びこの方法により作成されるデバイス並びに表面活性化装置及びこの装置を備えた接合装置
JP2007115825A (ja) * 2005-10-19 2007-05-10 Bondtech Inc 表面活性化方法および表面活性化装置
US8039401B2 (en) * 2007-12-14 2011-10-18 Fairchild Semiconductor Corporation Structure and method for forming hybrid substrate
JP2009289953A (ja) * 2008-05-29 2009-12-10 Hitachi Ulsi Systems Co Ltd ウェハレベルパッケージ、ウェハレベルパッケージの製造方法及びｍｅｍｓデバイスの製造方法
JP5401661B2 (ja) 2008-08-22 2014-01-29 株式会社ムサシノエンジニアリング 原子拡散接合方法及び前記方法により接合された構造体
JP4843012B2 (ja) * 2008-11-17 2011-12-21 日本電波工業株式会社 圧電デバイスとその製造方法
JP5569964B2 (ja) 2010-05-07 2014-08-13 株式会社ムサシノエンジニアリング 原子拡散接合方法
US8557679B2 (en) * 2010-06-30 2013-10-15 Corning Incorporated Oxygen plasma conversion process for preparing a surface for bonding
JP2012065305A (ja) * 2010-08-20 2012-03-29 Nippon Dempa Kogyo Co Ltd 圧電デバイスの製造方法及び圧電デバイス
JP5783252B2 (ja) 2011-07-29 2015-09-24 株式会社村田製作所 弾性波デバイスの製造方法
US9620560B2 (en) * 2011-08-26 2017-04-11 Joled Inc. EL display device and method for manufacturing same
US8809123B2 (en) * 2012-06-05 2014-08-19 Taiwan Semiconductor Manufacturing Company, Ltd. Three dimensional integrated circuit structures and hybrid bonding methods for semiconductor wafers
WO2014046052A1 (ja) * 2012-09-23 2014-03-27 国立大学法人東北大学 チップ支持基板、チップ支持方法、三次元集積回路、アセンブリ装置及び三次元集積回路の製造方法
JP2014138136A (ja) * 2013-01-18 2014-07-28 Tokyo Electron Ltd 接合方法、プログラム、コンピュータ記憶媒体及び接合システム
FR3025051A1 (fr) * 2014-08-22 2016-02-26 Commissariat Energie Atomique Procede de realisation d'un circuit integre par collage direct de substrats comprenant en surface des portions de cuivre et de materiau dielectrique
FR3027250B1 (fr) * 2014-10-17 2019-05-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de collage direct via des couches metalliques peu rugueuses
US9536853B2 (en) * 2014-11-18 2017-01-03 International Business Machines Corporation Semiconductor device including built-in crack-arresting film structure
US9953941B2 (en) * 2015-08-25 2018-04-24 Invensas Bonding Technologies, Inc. Conductive barrier direct hybrid bonding
CN105197881A (zh) * 2015-08-28 2015-12-30 中国科学院半导体研究所 一种利用金属材料扩散互溶实现硅-硅键合的方法
JP6294417B2 (ja) * 2016-09-01 2018-03-14 日機装株式会社 光半導体装置および光半導体装置の製造方法
US9892920B1 (en) * 2017-01-05 2018-02-13 Lam Research Corporation Low stress bonding of silicon or germanium parts
CN110651359A (zh) * 2017-05-25 2020-01-03 株式会社新川 结构体的制造方法及结构体
JP2019117311A (ja) * 2017-12-27 2019-07-18 マルミ光機株式会社 Ｎｄフィルターおよびその製造方法
JP7018126B2 (ja) * 2018-04-20 2022-02-09 富士フイルム株式会社 導熱層、感光層、感光性組成物、導熱層の製造方法、並びに、積層体および半導体デバイス
CN116364659A (zh) * 2018-06-29 2023-06-30 长江存储科技有限责任公司 半导体结构及其形成方法
JP6986105B2 (ja) 2018-07-05 2021-12-22 エーファウ・グループ・エー・タルナー・ゲーエムベーハー ウエハの永久接合方法
EP3670998B1 (de) 2018-12-18 2022-11-16 Nexans Kupplung für fluidführende leitungen
JP7199743B2 (ja) * 2018-12-28 2023-01-06 国立研究開発法人産業技術総合研究所 グラファイト薄膜／シリコン基板積層体、及びその製造方法、高排熱型電子デバイス用基板
KR20200098031A (ko) 2019-02-11 2020-08-20 주식회사 엘지화학 에어 필터 및 그 제조 방법
FR3098985B1 (fr) * 2019-07-15 2022-04-08 Soitec Silicon On Insulator Procédé de collage hydrophile de substrats
JP7131778B2 (ja) 2019-09-05 2022-09-06 国立大学法人東北大学 化学結合法及び接合構造体
EP4026644A4 (en) * 2019-09-05 2023-09-27 Tohoku University CHEMICAL BONDING METHOD AND BONDED STRUCTURE
WO2021131080A1 (ja) * 2019-12-27 2021-07-01 ボンドテック株式会社 接合方法、被接合物および接合装置
JP2021190932A (ja) * 2020-06-03 2021-12-13 セイコーエプソン株式会社 振動子及び発振器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012023326A (ja) * 2009-09-04 2012-02-02 Sumitomo Chemical Co Ltd 半導体基板、電界効果トランジスタ、集積回路、及び半導体基板の製造方法
JP2014022699A (ja) * 2012-07-24 2014-02-03 Nippon Telegr & Teleph Corp <Ntt> パッケージおよびその製造方法
JP2014221492A (ja) * 2014-06-19 2014-11-27 株式会社ムサシノエンジニアリング 原子拡散接合方法
TW201946233A (zh) * 2018-04-30 2019-12-01 台灣積體電路製造股份有限公司 封裝及其形成方法
TW202101808A (zh) * 2019-06-11 2021-01-01 美商菲絲博克科技有限公司 採用可變形的觸點和預先施加的底部填充物用於經由雷射來接合led裝置

Also Published As

Publication number Publication date
US11916038B2 (en) 2024-02-27
WO2022172349A1 (ja) 2022-08-18
WO2022172902A1 (ja) 2022-08-18
EP4292747A4 (en) 2025-03-19
EP4292747A1 (en) 2023-12-20
KR20230143167A (ko) 2023-10-11
CN115443203A (zh) 2022-12-06
CN115443203B (zh) 2024-07-16
JP7165342B1 (ja) 2022-11-04
JPWO2022172902A1 (https=) 2022-08-18
TW202245164A (zh) 2022-11-16
US20230051810A1 (en) 2023-02-16

Similar Documents

Publication Publication Date Title
TWI884358B (zh) 化學鍵結法、封裝型電子元件及電子裝置之混合接合法
CN103262231B (zh) 具有强化层的玻璃上半导体基材及其制备方法
JP6208646B2 (ja) 貼り合わせ基板とその製造方法、および貼り合わせ用支持基板
US9142448B2 (en) Method of producing a silicon-on-insulator article
KR102427272B1 (ko) 복합 기판, 나노카본막의 제작 방법 및 나노카본막
TWI456637B (zh) 絕緣層上覆矽（ｓｏｉ）基板之製造方法
US20030089950A1 (en) Bonding of silicon and silicon-germanium to insulating substrates
CN110098138B (zh) 用于结合基板的装置及方法
KR20150127274A (ko) 유리 시트의 벌크 어닐링
JP2014510418A (ja) ウェーハを永久的に結合する方法
US9659777B2 (en) Process for stabilizing a bonding interface, located within a structure which comprises an oxide layer and structure obtained
TW201637870A (zh) 石墨烯及用於將cvd生長石墨烯轉移至疏水性基材之無聚 合物方法
JP2014516469A (ja) ウェーハを永久的に結合する方法
CN104661786A (zh) 涂覆及接合衬底的方法
JP2021136424A (ja) 貼り合わせ装置、貼り合わせ方法およびそれを用いた素子の製造方法
CN117859417A (zh) 复合基板及复合基板的制造方法
KR102864969B1 (ko) 화학 결합법 및 접합 구조체
CN115697614A (zh) 原子扩散接合法及接合结构体
JP5424445B2 (ja) 半導体基板の製造方法および半導体基板
Shimizu et al. Characterization of sol–gel derived and crystallized ZrO2 thin films
JP5179401B2 (ja) 貼り合わせウェーハ及びその製造方法
JP2025109197A (ja) 基板の低温結合方法
JP4326422B2 (ja) ダイヤモンド積層シリコンウエハの製造方法
Takeuchi et al. Pre-bonding Baking of Wafers for Improved Surface Activated Bonding
CN121264198A (zh) 复合基板及复合基板的制造方法