TWI882173B - 圖像顯示裝置之製造方法及圖像顯示裝置 - Google Patents

圖像顯示裝置之製造方法及圖像顯示裝置 Download PDF

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Publication number
TWI882173B
TWI882173B TW110133954A TW110133954A TWI882173B TW I882173 B TWI882173 B TW I882173B TW 110133954 A TW110133954 A TW 110133954A TW 110133954 A TW110133954 A TW 110133954A TW I882173 B TWI882173 B TW I882173B
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TW
Taiwan
Prior art keywords
light
insulating film
layer
wiring
image display
Prior art date
Application number
TW110133954A
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English (en)
Chinese (zh)
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TW202230311A (zh
Inventor
秋元肇
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日商日亞化學工業股份有限公司
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Publication of TW202230311A publication Critical patent/TW202230311A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
TW110133954A 2020-09-17 2021-09-13 圖像顯示裝置之製造方法及圖像顯示裝置 TWI882173B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020156726 2020-09-17
JP2020-156726 2020-09-17

Publications (2)

Publication Number Publication Date
TW202230311A TW202230311A (zh) 2022-08-01
TWI882173B true TWI882173B (zh) 2025-05-01

Family

ID=80776955

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110133954A TWI882173B (zh) 2020-09-17 2021-09-13 圖像顯示裝置之製造方法及圖像顯示裝置

Country Status (6)

Country Link
US (1) US20230215907A1 (https=)
EP (1) EP4216290A4 (https=)
JP (1) JP7669643B2 (https=)
CN (1) CN116195075A (https=)
TW (1) TWI882173B (https=)
WO (1) WO2022059528A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022113949A1 (ja) * 2020-11-25 2022-06-02 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
US12074146B2 (en) * 2021-12-03 2024-08-27 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and manufacturing method thereof
CN114203734B (zh) * 2021-12-11 2023-08-22 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
KR20250002105A (ko) * 2022-04-20 2025-01-07 도레이 카부시키가이샤 표시 장치
TWI865239B (zh) * 2023-12-11 2024-12-01 友達光電股份有限公司 顯示裝置

Citations (3)

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TW201025617A (en) * 2005-01-28 2010-07-01 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
JP2016071340A (ja) * 2014-09-30 2016-05-09 群創光電股▲ふん▼有限公司Ｉｎｎｏｌｕｘ Ｃｏｒｐｏｒａｔｉｏｎ 表示パネルと表示装置
TW202032780A (zh) * 2018-05-25 2020-09-01 日商大日本印刷股份有限公司 顯示裝置用配線基板及顯示裝置、以及配線基板及其製造方法

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JP2002141492A (ja) * 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
JP4852322B2 (ja) * 2006-03-03 2012-01-11 ローム株式会社 窒化物半導体発光素子及びその製造方法
JP4481293B2 (ja) * 2006-12-22 2010-06-16 株式会社沖データ 発光表示装置
US20090078963A1 (en) * 2007-07-09 2009-03-26 Salah Khodja Nano-optoelectronic chip structure and method
US8455331B2 (en) * 2007-10-10 2013-06-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP2010219310A (ja) * 2009-03-17 2010-09-30 Sharp Corp 光デバイスおよび光デバイス構造
US20120242624A1 (en) * 2009-11-27 2012-09-27 Sharp Kabushiki Kaisha Thin film transistor and method for fabricating the same, semiconductor device and method for fabricating the same, as well as display
CN102822734B (zh) * 2010-04-16 2015-01-21 夏普株式会社 电子基板的制造方法、液晶显示装置的制造方法、电子基板以及液晶显示装置
KR102300517B1 (ko) * 2014-10-17 2021-09-13 인텔 코포레이션 마이크로led 디스플레이 및 어셈블리
US9871060B2 (en) * 2015-02-16 2018-01-16 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US11239394B2 (en) * 2016-03-18 2022-02-01 Lg Innotek Co., Ltd. Semiconductor device and display device including the same
KR102631260B1 (ko) * 2016-04-08 2024-01-31 삼성디스플레이 주식회사 표시장치 및 표시장치 제조방법
US10962586B2 (en) * 2017-01-23 2021-03-30 Apple Inc. Light emitting diode (LED) test apparatus and method of manufacture
CN107731864B (zh) * 2017-11-20 2020-06-12 开发晶照明（厦门）有限公司 微发光二极管显示器和制作方法
KR102698293B1 (ko) * 2018-11-27 2024-08-23 삼성전자주식회사 디스플레이 장치 및 제조 방법
JP7457255B2 (ja) * 2019-05-08 2024-03-28 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201025617A (en) * 2005-01-28 2010-07-01 Semiconductor Energy Lab Semiconductor device, electronic device, and method of manufacturing semiconductor device
JP2016071340A (ja) * 2014-09-30 2016-05-09 群創光電股▲ふん▼有限公司Ｉｎｎｏｌｕｘ Ｃｏｒｐｏｒａｔｉｏｎ 表示パネルと表示装置
TW202032780A (zh) * 2018-05-25 2020-09-01 日商大日本印刷股份有限公司 顯示裝置用配線基板及顯示裝置、以及配線基板及其製造方法

Also Published As

Publication number Publication date
WO2022059528A1 (ja) 2022-03-24
EP4216290A1 (en) 2023-07-26
US20230215907A1 (en) 2023-07-06
JPWO2022059528A1 (https=) 2022-03-24
JP7669643B2 (ja) 2025-04-30
TW202230311A (zh) 2022-08-01
EP4216290A4 (en) 2024-10-23
CN116195075A (zh) 2023-05-30

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