TWI854452B - 診斷裝置、診斷方法、半導體製造裝置系統及半導體裝置製造系統 - Google Patents

診斷裝置、診斷方法、半導體製造裝置系統及半導體裝置製造系統 Download PDF

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Publication number
TWI854452B
TWI854452B TW112102363A TW112102363A TWI854452B TW I854452 B TWI854452 B TW I854452B TW 112102363 A TW112102363 A TW 112102363A TW 112102363 A TW112102363 A TW 112102363A TW I854452 B TWI854452 B TW I854452B
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Taiwan
Prior art keywords
degradation
component
sensor waveform
degradation degree
semiconductor manufacturing
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TW112102363A
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English (en)
Chinese (zh)
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TW202333073A (zh
Inventor
梅田祥太
角屋誠浩
朝倉涼次
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日商日立全球先端科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing And Monitoring For Control Systems (AREA)
TW112102363A 2022-02-07 2023-01-18 診斷裝置、診斷方法、半導體製造裝置系統及半導體裝置製造系統 TWI854452B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2022/004679 2022-02-07
PCT/JP2022/004679 WO2023148967A1 (ja) 2022-02-07 2022-02-07 診断装置、診断方法、半導体製造装置システム及び半導体装置製造システム

Publications (2)

Publication Number Publication Date
TW202333073A TW202333073A (zh) 2023-08-16
TWI854452B true TWI854452B (zh) 2024-09-01

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ID=87552003

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TW112102363A TWI854452B (zh) 2022-02-07 2023-01-18 診斷裝置、診斷方法、半導體製造裝置系統及半導體裝置製造系統

Country Status (6)

Country Link
US (1) US20240395518A1 (https=)
JP (1) JP7442013B2 (https=)
KR (1) KR102863239B1 (https=)
CN (1) CN116897411A (https=)
TW (1) TWI854452B (https=)
WO (1) WO2023148967A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250040892A (ko) * 2023-09-15 2025-03-25 주식회사 히타치하이테크 프로세스 처리 장치의 진단 장치, 진단 시스템, 및 진단 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100262425A1 (en) * 2008-03-21 2010-10-14 Tokyo University Of Science Educational Foundation Administrative Organization Noise suppression device and noise suppression method
JP2012009064A (ja) * 2011-09-05 2012-01-12 Toshiba Corp 学習型プロセス異常診断装置、およびオペレータ判断推測結果収集装置
TWI411035B (zh) * 2006-04-04 2013-10-01 泛林股份有限公司 使用經由利用平面離子通量探測配置所導出之參數的控制電漿處理之方法
CN105474378A (zh) * 2014-02-25 2016-04-06 应用材料公司 使用光学传感器的脉冲等离子体监测
WO2018061842A1 (ja) * 2016-09-27 2018-04-05 東京エレクトロン株式会社 異常検知プログラム、異常検知方法および異常検知装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6421457B1 (en) * 1999-02-12 2002-07-16 Applied Materials, Inc. Process inspection using full and segment waveform matching
US20100076729A1 (en) * 2008-09-19 2010-03-25 Applied Materials, Inc. Self-diagnostic semiconductor equipment
JP2010283000A (ja) 2009-06-02 2010-12-16 Renesas Electronics Corp 半導体製造における装置異常の予兆検知方法
WO2011002811A2 (en) * 2009-06-30 2011-01-06 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
KR102425936B1 (ko) 2019-07-30 2022-07-28 주식회사 히타치하이테크 장치 진단 장치, 플라스마 처리 장치 및 장치 진단 방법
EP3796362A1 (en) * 2019-09-23 2021-03-24 TRUMPF Huettinger Sp. Z o. o. Method of plasma processing a substrate in a plasma chamber and plasma processing system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI411035B (zh) * 2006-04-04 2013-10-01 泛林股份有限公司 使用經由利用平面離子通量探測配置所導出之參數的控制電漿處理之方法
US20100262425A1 (en) * 2008-03-21 2010-10-14 Tokyo University Of Science Educational Foundation Administrative Organization Noise suppression device and noise suppression method
JP2012009064A (ja) * 2011-09-05 2012-01-12 Toshiba Corp 学習型プロセス異常診断装置、およびオペレータ判断推測結果収集装置
CN105474378A (zh) * 2014-02-25 2016-04-06 应用材料公司 使用光学传感器的脉冲等离子体监测
WO2018061842A1 (ja) * 2016-09-27 2018-04-05 東京エレクトロン株式会社 異常検知プログラム、異常検知方法および異常検知装置

Also Published As

Publication number Publication date
US20240395518A1 (en) 2024-11-28
KR20230120121A (ko) 2023-08-16
TW202333073A (zh) 2023-08-16
CN116897411A (zh) 2023-10-17
WO2023148967A1 (ja) 2023-08-10
JP7442013B2 (ja) 2024-03-01
KR102863239B1 (ko) 2025-09-22
JPWO2023148967A1 (https=) 2023-08-10

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