TWI842910B - 加熱處理裝置及加熱處理方法 - Google Patents

加熱處理裝置及加熱處理方法 Download PDF

Info

Publication number
TWI842910B
TWI842910B TW109120305A TW109120305A TWI842910B TW I842910 B TWI842910 B TW I842910B TW 109120305 A TW109120305 A TW 109120305A TW 109120305 A TW109120305 A TW 109120305A TW I842910 B TWI842910 B TW I842910B
Authority
TW
Taiwan
Prior art keywords
suction
heat treatment
collection container
treatment device
substrate
Prior art date
Application number
TW109120305A
Other languages
English (en)
Chinese (zh)
Other versions
TW202119524A (zh
Inventor
髙木慎介
久我恭弘
大塚幸信
相良慎一
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202119524A publication Critical patent/TW202119524A/zh
Application granted granted Critical
Publication of TWI842910B publication Critical patent/TWI842910B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D45/00—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces
    • B01D45/04—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia
    • B01D45/08—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia by impingement against baffle separators
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00—Charging; Discharging; Manipulation of charge
    • F27D3/0084—Charging; Manipulation of SC or SC wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW109120305A 2019-07-01 2020-06-17 加熱處理裝置及加熱處理方法 TWI842910B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019122961A JP7261675B2 (ja) 2019-07-01 2019-07-01 加熱処理装置及び加熱処理方法
JP2019-122961 2019-07-01

Publications (2)

Publication Number Publication Date
TW202119524A TW202119524A (zh) 2021-05-16
TWI842910B true TWI842910B (zh) 2024-05-21

Family

ID=73918815

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109120305A TWI842910B (zh) 2019-07-01 2020-06-17 加熱處理裝置及加熱處理方法

Country Status (5)

Country Link
US (1) US11393702B2 (https=)
JP (1) JP7261675B2 (https=)
KR (1) KR102809463B1 (https=)
CN (2) CN112185847B (https=)
TW (1) TWI842910B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7261675B2 (ja) * 2019-07-01 2023-04-20 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
JP7441665B2 (ja) * 2020-02-10 2024-03-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TW202324499A (zh) 2021-11-05 2023-06-16 日商東京威力科創股份有限公司 加熱處理裝置、加熱處理方法及電腦記憶媒體
JP7795962B2 (ja) * 2022-04-26 2026-01-08 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及びコンピュータ記憶媒体
JP2023167845A (ja) 2022-05-13 2023-11-24 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及びコンピュータ記憶媒体
JP2023177658A (ja) * 2022-06-02 2023-12-14 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
CN115394636B (zh) * 2022-10-26 2023-01-03 广州粤芯半导体技术有限公司 半导体光刻方法、系统、设备和计算机可读存储介质
JP7764356B2 (ja) * 2022-12-21 2025-11-05 日本碍子株式会社 プラグ、プラグ製造方法及び半導体製造装置用部材
KR102765522B1 (ko) * 2022-12-22 2025-02-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102828824B1 (ko) * 2024-05-09 2025-07-04 엠투에스 주식회사 오븐 유닛을 구비한 코팅 액 도포 시스템

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090269936A1 (en) * 2007-10-02 2009-10-29 Sokudo Co., Ltd. Substrate Processing Apparatus
US20170032983A1 (en) * 2015-07-29 2017-02-02 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, maintenance method of substrate processing apparatus, and storage medium

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943235A (en) * 1987-11-27 1990-07-24 Tel Sagami Limited Heat-treating apparatus
JPH0793270B2 (ja) * 1991-02-15 1995-10-09 株式会社半導体プロセス研究所 半導体製造装置及びその使用方法
JPH06244269A (ja) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp 半導体製造装置並びに半導体製造装置におけるウエハ真空チャック装置及びガスクリーニング方法及び窒化膜形成方法
JP3853256B2 (ja) * 2002-05-28 2006-12-06 東京エレクトロン株式会社 基板ベーク装置、基板ベーク方法及び塗布膜形成装置
KR100693475B1 (ko) * 2005-01-24 2007-04-16 이앙구 반도체 설비의 부산물 포집장치
JP4519087B2 (ja) * 2006-03-02 2010-08-04 東京エレクトロン株式会社 熱処理装置
JP4781901B2 (ja) * 2006-05-08 2011-09-28 東京エレクトロン株式会社 熱処理方法，プログラム及び熱処理装置
JP4737083B2 (ja) * 2006-12-28 2011-07-27 東京エレクトロン株式会社 加熱装置及び塗布、現像装置並びに加熱方法
JP5109376B2 (ja) * 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
JP5066981B2 (ja) * 2007-03-30 2012-11-07 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP4811882B2 (ja) * 2009-03-27 2011-11-09 東京エレクトロン株式会社 基板熱処理装置
JP5522144B2 (ja) * 2011-10-25 2014-06-18 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
JP6384414B2 (ja) * 2014-08-08 2018-09-05 東京エレクトロン株式会社 基板加熱装置、基板加熱方法、記憶媒体
JP6406192B2 (ja) 2014-12-10 2018-10-17 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及び記憶媒体
US11802340B2 (en) * 2016-12-12 2023-10-31 Applied Materials, Inc. UHV in-situ cryo-cool chamber
JP6925213B2 (ja) * 2017-09-22 2021-08-25 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
JP7451490B2 (ja) * 2018-07-30 2024-03-18 ノードソン コーポレーション プラズマを用いたワーク処理用のシステム
JP2020170749A (ja) * 2019-04-01 2020-10-15 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7261675B2 (ja) * 2019-07-01 2023-04-20 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
US20210057238A1 (en) * 2019-08-20 2021-02-25 Applied Materials, Inc. Methods and apparatus for contactless substrate warpage correction
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置
US11107716B1 (en) * 2020-02-06 2021-08-31 Pyxis Cf Pte. Ltd. Automation line for processing a molded panel

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090269936A1 (en) * 2007-10-02 2009-10-29 Sokudo Co., Ltd. Substrate Processing Apparatus
US20170032983A1 (en) * 2015-07-29 2017-02-02 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, maintenance method of substrate processing apparatus, and storage medium

Also Published As

Publication number Publication date
JP7261675B2 (ja) 2023-04-20
CN112185847B (zh) 2025-07-25
KR102809463B1 (ko) 2025-05-19
TW202119524A (zh) 2021-05-16
KR20210003048A (ko) 2021-01-11
CN112185847A (zh) 2021-01-05
JP2021009923A (ja) 2021-01-28
US20210005468A1 (en) 2021-01-07
US11393702B2 (en) 2022-07-19
CN213042875U (zh) 2021-04-23

Similar Documents

Publication Publication Date Title
TWI842910B (zh) 加熱處理裝置及加熱處理方法
TWI789048B (zh) 基板處理方法、基板處理系統及電腦可讀取記憶媒體
CN105702603B (zh) 加热处理装置和加热处理方法
CN105374711B (zh) 基板加热装置和基板加热方法
JP6955073B2 (ja) 熱処理方法及び熱処理装置
JP4043831B2 (ja) 熱処理装置
US7351936B1 (en) Method and apparatus for preventing baking chamber exhaust line clog
JP3898895B2 (ja) 加熱処理装置及び加熱処理方法
CN221947099U (zh) 热处理装置
JP7742438B2 (ja) 熱処理装置、熱処理方法及び記憶媒体
JP2003158061A (ja) 基板処理装置および基板処理方法
JP7774071B2 (ja) 加熱処理装置、加熱処理方法及びコンピュータ記憶媒体
JP7795962B2 (ja) 加熱処理装置、加熱処理方法及びコンピュータ記憶媒体
TWI902892B (zh) 熱處理裝置、熱處理方法及記錄媒體
JP2026057241A (ja) 基板処理方法
TW202435329A (zh) 熱處理裝置及熱處理方法
CN116313892A (zh) 冷却单元和具备其的热处理装置以及热处理方法
TW201946183A (zh) 基板處理裝置
JP2015026687A (ja) プラズマ処理装置及びプラズマ処理方法