TWI834227B - Probe preheating method for wafer-level probe card - Google Patents
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Abstract
一探針卡、該探針卡上的複數個探針、可直線移動的一晶圓承載盤、 與該探針卡電連接的一測試機台,所有探針的針尖共同形成一探針卡針尖,該晶圓承載盤承載一晶圓,該晶圓具有電路的表面係面向該探針卡針尖。該測試機台控制該晶圓承載盤向該探針卡的方向移動,使得該探針卡針尖中的一第一根針尖與該晶圓的表面直接接觸為止,接著控制該晶圓承載盤向遠離該探針卡的方向移動一非接觸安全距離至一安全高度後靜止一安全預熱時間,接著重複上述動作,直到該晶圓承載盤向遠離該探針卡的方向移動一非接觸有效距離至一有效高度後靜止一有效預熱時間。 A probe card, a plurality of probes on the probe card, a wafer carrier that can move linearly, A test machine is electrically connected to the probe card. The tips of all probes together form a probe card tip. The wafer carrier carries a wafer. The surface of the wafer with circuits faces the probe card tip. . The test machine controls the wafer carrier to move in the direction of the probe card until a first needle tip of the probe card directly contacts the surface of the wafer, and then controls the wafer carrier to move in the direction of the probe card. Move a non-contact safety distance away from the probe card to a safe height, then stop for a safety preheating time, and then repeat the above actions until the wafer carrier moves a non-contact effective distance away from the probe card. After reaching an effective height, it remains stationary for an effective preheating time.
Description
一種探針預熱的方法,尤指一種晶圓級探針卡的探針預熱方法。 A probe preheating method, especially a probe preheating method for a wafer-level probe card.
測試一晶圓(wafer)上的多個積體電路(Integrated Circuit,簡稱IC)產品時(又稱晶圓級IC測試),依所述IC產品的特性與規格需求,通常會在不同溫度如常溫、高溫或低溫的環境下進行IC測試。在測試一晶圓上的多個IC產品時,需要通過一測試治具才能使所述多個IC產品各自的多個腳位與一測試機台信號連接(或稱電連接),所以該測試治具通常具有眾多精密的探針(probe),因此該測試治具一般稱為探針卡(probe card)。探針卡上的多個探針的針尖必須與IC產品的多個腳位直接接觸才能形成彼此間的信號連接(或稱電連接),其中所述探針卡上的多個探針的針尖組成探針卡針尖(probe card tips)。由於探針卡針尖在不同溫下進行IC測試時,因熱漲冷縮的物理現象,使得所述探針卡針尖的位置會隨著測試溫度的不同而有所改變,所以晶圓上的多個IC產品要進行量產測試時,若探針卡的溫度與將要進行的測試的溫度不同時,需先將探針卡進行預熱或預冷,使探針卡的整體溫度與將要進行的測試的溫度相同,以使探針卡針尖的位置達到穩定的狀態,然後才能進行量產測試,以避免探針卡的預熱或預冷造成探針卡上的針尖與IC產品的腳位損壞的問題。 When testing multiple integrated circuit (IC) products on a wafer (also known as wafer-level IC testing), depending on the characteristics and specification requirements of the IC products, they are usually tested at different temperatures, such as Conduct IC testing in normal, high or low temperature environments. When testing multiple IC products on a wafer, a test fixture is required to make signal connections (or electrical connections) between multiple pins of the multiple IC products and a test machine. Therefore, the test The fixture usually has many precision probes, so the test fixture is generally called a probe card. The needle tips of the multiple probes on the probe card must be in direct contact with multiple pins of the IC product to form signal connections (or electrical connections) between them. The needle tips of the multiple probes on the probe card must be in direct contact with multiple pins of the IC product. Consists of probe card tips. When the probe card tip is used for IC testing at different temperatures, due to the physical phenomenon of thermal expansion and contraction, the position of the probe card tip will change with different test temperatures, so there are many problems on the wafer. When an IC product is to be mass-produced and tested, if the temperature of the probe card is different from the temperature of the test to be carried out, the probe card needs to be preheated or pre-cooled first so that the overall temperature of the probe card is consistent with the temperature of the test to be carried out. The temperature of the test is the same to ensure that the tip position of the probe card reaches a stable state before mass production testing can be carried out to avoid damage to the tip of the probe card and the pins of the IC product caused by preheating or pre-cooling of the probe card. problem.
現行探針卡進行預熱/預冷時,皆使用晶圓承載盤(prober chuck)來固定欲測試的晶圓,而所述探針卡係以未接觸到待測試晶圓的方式,設置在距離一待測試晶圓的一固定高度,來進行探針卡針尖的預熱/預冷,但若探針卡針尖本身的材質或結構對溫度的改變有很大的變化量時,則所述探針卡設置於 固定高度且未接觸待測試晶圓的預熱/預冷方式,將無法有效的使探針卡針尖的位置達到穩定狀態,而若以探針卡針尖直接接觸待測試晶圓的方式進行探針卡針尖預熱,亦因熱漲冷縮現象,會造成探針卡針尖損壞的風險大增。而若在探針卡針尖的位置尚未達穩定狀態(亦即探針卡的探針溫度仍顯著變化中)前,就在探針卡針尖施加測試針壓來對待測試晶圓進行測試,則於晶圓測試過程中,會因探針卡針尖在接觸所述待測試晶圓的電極凸塊/墊(bump/pad)後仍持續的變化而產生種種問題,例如在高溫測試時,探針卡針尖遇熱持續膨脹,造成探針卡針尖的針位不佳,導致針痕面積過大的問題,又例如在低溫測試時,探針卡針尖遇冷持續縮針,導致針壓不足,以致有測試誤宰的問題。 When the current probe card is preheating/precooling, a wafer chuck is used to fix the wafer to be tested, and the probe card is set on the wafer without contacting the wafer to be tested. The probe card tip is preheated/precooled at a fixed height from the wafer to be tested. However, if the material or structure of the probe card tip itself has a large change in temperature, then the The preheating/precooling method in which the probe card is set at a fixed height and does not contact the wafer to be tested will not be able to effectively stabilize the position of the probe card tip. However, if the probe card tip directly contacts the wafer to be tested, The probe card tip is preheated in a certain way, and due to the phenomenon of thermal expansion and cold contraction, the risk of damage to the probe card tip will be greatly increased. And if the test pin pressure is applied to the probe card tip to test the wafer to be tested before the position of the probe card tip reaches a stable state (that is, the probe temperature of the probe card is still changing significantly), then the wafer to be tested will be tested. During the wafer testing process, various problems may arise due to the continuous changes of the probe card tip after contacting the electrode bump/pad of the wafer to be tested. For example, during high temperature testing, the probe card tip will continue to change. The needle tip continues to expand when exposed to heat, resulting in poor needle position of the probe card needle tip, resulting in an excessive needle mark area. For example, during low-temperature testing, the probe card needle tip continues to shrink when exposed to cold, resulting in insufficient needle pressure, resulting in test failure. The problem of accidental slaughter.
有鑑於此,如何更有效的進行探針卡針尖的預熱/預冷以降低上述探針卡針尖損壞、針位不佳針痕面積過大、針壓不足測試誤宰等風險,是有迫切的需求。 In view of this, it is urgent to preheat/precool the probe card tip more effectively to reduce the above-mentioned risks of probe card tip damage, poor needle position, excessive needle mark area, and insufficient needle pressure. need.
為了解決上述問題,本發明揭露了一種晶圓級探針卡的探針預熱方法,包含以下的技術內容:提供:一探針卡、固設於該探針卡上的複數個探針、可直線移動的一晶圓承載盤、與該探針卡電連接的一測試機台,其中固設於該探針卡的所有複數個探針的針尖共同形成一探針卡針尖,該晶圓承載盤係用以承載一晶圓,該晶圓中具有積體電路(IC)的一表面係面向於該探針卡針尖,該方法包含下列步驟:步驟1:該測試機台控制該晶圓承載盤向該探針卡的方向移動,使得該探針卡針尖中的一第一根針尖與該晶圓的該表面直接接觸為止,此時該晶圓承載盤的高度為一安全起始高度;步驟2:該測試機台控制該晶圓承載盤向遠離該探針卡的方向移動一非接觸安全距離至一安全高度,此時該探針卡針尖與該晶圓的該表面未直接接觸; 步驟3:該測試機台控制該晶圓承載盤靜止一安全預熱時間,其中該晶圓的溫度以熱輻射與熱對流的方式傳至該探針卡針尖;步驟4:該測試機台控制該晶圓承載盤向該探針卡的方向移動,使得該探針卡針尖中的一第一根針尖與該晶圓的該表面直接接觸為止,此時該晶圓承載盤的高度為一有效起始高度;步驟5:該測試機台控制該晶圓承載盤向遠離該探針卡的方向移動一非接觸有效距離至一有效高度,此時該探針卡針尖與該晶圓的該表面未直接接觸,其中該非接觸有效距離係小於該非接觸安全距離;步驟6:該測試機台控制該晶圓承載盤靜止一有效預熱時間,其中該晶圓的溫度以熱輻射與熱對流的方式傳至該探針卡針尖。 In order to solve the above problems, the present invention discloses a probe preheating method for a wafer-level probe card, which includes the following technical contents: providing: a probe card, a plurality of probes fixed on the probe card, A wafer carrier that can move linearly, and a test machine electrically connected to the probe card, in which the tips of all probes fixed on the probe card jointly form a probe card tip, and the wafer The carrier plate is used to carry a wafer, and a surface of the wafer with an integrated circuit (IC) faces the tip of the probe card. The method includes the following steps: Step 1: The test machine controls the wafer The carrier plate moves in the direction of the probe card until a first needle tip of the probe card directly contacts the surface of the wafer. At this time, the height of the wafer carrier plate is a safe starting height. ; Step 2: The test machine controls the wafer carrier to move a non-contact safe distance away from the probe card to a safe height. At this time, the tip of the probe card is not in direct contact with the surface of the wafer. ; Step 3: The test machine controls the wafer carrier to stand still for a safe preheating time, in which the temperature of the wafer is transmitted to the tip of the probe card through thermal radiation and heat convection; Step 4: The test machine controls The wafer carrier moves toward the direction of the probe card until a first needle tip of the probe card directly contacts the surface of the wafer. At this time, the height of the wafer carrier is an effective Starting height; Step 5: The test machine controls the wafer carrier to move a non-contact effective distance away from the probe card to an effective height. At this time, the tip of the probe card is in contact with the surface of the wafer. There is no direct contact, and the non-contact effective distance is smaller than the non-contact safety distance; Step 6: The test machine controls the wafer carrier to be stationary for an effective preheating time, in which the temperature of the wafer is determined by thermal radiation and thermal convection. to the tip of the probe card.
較佳的,該方法還包含下列步驟:步驟7:該測試機台控制該晶圓承載盤向該探針卡的方向移動,使得該探針卡針尖中的一第一根針尖與該晶圓的該表面直接接觸為止,此時該晶圓承載盤的高度為一穩定起始高度;步驟8:該測試機台控制該晶圓承載盤向該探針卡的方向移動一穩定接觸距離至一穩定高度,此時該探針卡針尖與該晶圓的該表面係直接接觸;步驟9:該測試機台控制該晶圓承載盤靜止一穩定預熱時間,其中該晶圓的溫度是以熱傳導的方式傳至該探針卡針尖。 Preferably, the method also includes the following steps: Step 7: The testing machine controls the wafer carrier to move in the direction of the probe card, so that a first tip of the probe card tip is in contact with the wafer. until the surface is in direct contact, at this time the height of the wafer carrier is a stable starting height; Step 8: The test machine controls the wafer carrier to move a stable contact distance in the direction of the probe card to a stable contact distance Stable height, at this time, the tip of the probe card is in direct contact with the surface of the wafer; Step 9: The test machine controls the wafer carrier to remain stationary for a stable preheating time, in which the temperature of the wafer is determined by thermal conduction to the tip of the probe card.
較佳的,該方法還包含下列步驟:步驟10:該測試機台將該穩定起始高度的值指定給一前次穩定度判斷起始高度;步驟11:該測試機台控制該晶圓承載盤向遠離該探針卡的方向移動,直到該探針卡針尖沒有與該晶圓的該表面直接接觸為止,再控制該晶圓承載盤向該
探針卡的方向移動,使得該探針卡針尖的一第一根針尖與該晶圓的該表面直接接觸為止,此時該晶圓承載盤的高度為一穩定度判斷起始高度;步驟12:該測試機台控制該晶圓承載盤向該探針卡的方向移動一穩定度判斷接觸距離至一穩定度判斷高度,此時該探針卡針尖與該晶圓的該表面係直接接觸;步驟13:該測試機台控制該晶圓承載盤靜止一穩定度判斷時間;步驟14:該測試機台比對該穩定度判斷起始高度與該前次穩定度判斷起始高度二者,若所述二者間的高度差異小於一第二接觸閥值,流程結束;步驟15:若所述二者間的高度差異大於或等於該第二接觸閥值,該測試機台將該穩定度判斷起始高度的值指定給一前次穩定度判斷起始高度,回到步驟11。
Preferably, the method also includes the following steps: Step 10: The testing machine assigns the value of the stable starting height to a previous stability judgment starting height; Step 11: The testing machine controls the wafer load The disk moves away from the probe card until the tip of the probe card is not in direct contact with the surface of the wafer, and then controls the wafer carrier disk to move toward the surface of the wafer.
The direction of the probe card is moved until a first tip of the probe card tip is in direct contact with the surface of the wafer. At this time, the height of the wafer carrier is a stability judgment starting height; step 12 : The test machine controls the wafer carrier to move a stability judgment contact distance to a stability judgment height in the direction of the probe card. At this time, the tip of the probe card is in direct contact with the surface of the wafer; Step 13: The test machine controls the wafer carrier to remain stationary for a stability judgment time; Step 14: The test machine compares the starting height of the stability judgment with the starting height of the previous stability judgment. If The height difference between the two is less than a second contact threshold, and the process ends; Step 15: If the height difference between the two is greater than or equal to the second contact threshold, the testing machine determines the stability The value of the starting height is assigned to the starting height of the previous stability judgment and returns to
依據上述本發明所揭露的晶圓級探針卡的探針預熱方法,其先經過兩道非接觸式的預熱/預冷步驟,再進入接觸式的一預熱/預冷步驟,最後才進入接觸式的一穩定度判斷程序,亦即本發明所揭露的晶圓級探針卡的探針預熱方法係以漸進的方式,進行晶圓級探針卡的探針預熱,如此既可以較短的時間使探針卡針尖達到穩定狀態,同時也避免在探針卡針尖與晶圓接觸時,因熱漲冷縮造成探針卡針尖與IC產品的腳位損壞的問題,可達成本發明的目的。 According to the probe preheating method of the wafer-level probe card disclosed in the present invention, it first goes through two non-contact preheating/precooling steps, then enters a contact preheating/precooling step, and finally Only then enters a contact stability judgment process, that is, the probe preheating method of the wafer level probe card disclosed in the present invention performs the probe preheating of the wafer level probe card in a progressive manner, so that It can not only make the probe card tip reach a stable state in a short time, but also avoid the problem of damage to the pins of the probe card tip and IC products due to thermal expansion and cold contraction when the probe card tip comes into contact with the wafer. achieve the purpose of the present invention.
1:晶圓級積體電路測試系統 1: Wafer-level integrated circuit test system
10:探針卡 10: Probe card
11:探針 11:Probe
12:針尖 12: needle tip
14:探針卡針尖 14: Probe card tip
20:晶圓 20:wafer
30:晶圓承載盤 30:Wafer carrier
50:測試機台 50:Testing machine
51:測試空間 51:Test space
d1:非接觸安全距離 d1: non-contact safety distance
d2:非接觸有效距離 d2: Non-contact effective distance
d3:穩定接觸距離 d3: Stable contact distance
d4:穩定度判斷接觸距離 d4: Stability judgment contact distance
t1:第一時間 t1: the first time
t2:第二時間 t2: second time
t3:第三時間 t3: The third time
圖1係執行本發明晶圓級探針卡的探針預熱方法的晶圓級積體電路測試系統進行安全預熱/預冷步驟的示意圖。 Figure 1 is a schematic diagram of the safety preheating/precooling steps of a wafer-level integrated circuit testing system that implements the probe preheating method of the wafer-level probe card of the present invention.
圖2係執行本發明晶圓級探針卡的探針預熱方法的晶圓級積體電路測試系統進行有效預熱/預冷步驟的示意圖。 Figure 2 is a schematic diagram of the effective preheating/precooling steps of a wafer-level integrated circuit testing system that implements the probe preheating method of the wafer-level probe card of the present invention.
圖3係執行本發明晶圓級探針卡的探針預熱方法的晶圓級積體電路測試系統進行穩定預熱/預冷步驟的示意圖。 FIG. 3 is a schematic diagram of the stable preheating/precooling steps of a wafer-level integrated circuit testing system that implements the probe preheating method of the wafer-level probe card of the present invention.
圖4係執行本發明晶圓級探針卡的探針預熱方法的晶圓級積體電路測試系統進行穩定度判斷程序的示意圖。 FIG. 4 is a schematic diagram of the stability judgment procedure of the wafer-level integrated circuit testing system that implements the probe preheating method of the wafer-level probe card of the present invention.
圖5係探針卡的針尖之溫度特性曲線的示意圖。 Figure 5 is a schematic diagram of the temperature characteristic curve of the tip of the probe card.
圖6A、6B係本發明晶圓級探針卡的探針預熱方法的流程圖。 6A and 6B are flow charts of the probe preheating method of the wafer-level probe card of the present invention.
請參閱圖1所示,圖1是執行本發明晶圓級探針卡的探針預熱方法的晶圓級積體電路測試系統1。該晶圓級積體電路測試系統1包含位置固定的一探針卡10、固設於該探針卡10上的複數個探針11、可沿著z-軸方向上下移動的一晶圓承載盤30、與該探針卡10電連接的一測試機台50。該測試機台50具有密閉的一測試空間51,該探針卡10、該晶圓承載盤30係被容置於該測試空間51之中。其中該晶圓承載盤30係具有一溫控裝置與一沿著z-軸方向上下移動的移動機構(皆未圖示);該測試機台50係具有電腦、顯示器、控制介面與測試介面,並可執行一應用程式來控制該晶圓級積體電路測試系統1的硬體及本發明晶圓級探針卡的探針預熱方法的流程。其中該測試機台50的測試介面係與該探針卡10電連接,以進行晶圓級積體電路測試,而該測試機台50的控制介面係與該晶圓承載盤30的移動機構與溫控裝置電連接,以控制該晶圓承載盤30的高度與溫度。
Please refer to FIG. 1 . FIG. 1 is a wafer-level integrated circuit testing system 1 that performs the probe preheating method of the wafer-level probe card of the present invention. The wafer level integrated circuit testing system 1 includes a fixed
其中,所述複數個探針11中的每一個都具有一針尖12,固設於該探針卡10的所有複數個探針11的針尖12共同形成一探針卡針尖14。該探針卡10藉由一支撐機構(未圖示)固定設置在一固定位置,固設於該探針卡10的該複數個探針11係皆位於該探針卡10的一下側且該複數個探針11的針尖12皆朝下(即逆著z-軸方向)。該晶圓承載盤30係位於該探針卡10及該複數個探針11的正下
方,該晶圓承載盤30的一上側可藉由一固定機構(例如吸盤,未圖示)固定並承載一晶圓20,該晶圓20中具有積體電路(IC)的一表面係朝上且面向於該複數個探針11,該晶圓20中具有積體電路(IC)的該表面還具有多個電極凸塊/墊(bump/pad),因此該晶圓承載盤30可沿著z-軸方向向上移動,使得該探針卡針尖14與該晶圓20的該表面上的多個電極凸塊/墊直接接觸,以形成該探針卡針尖14與所述多個電極凸塊/墊之間的電連結,如此該測試機台50即可經由該探針卡10、及該探針卡針尖14來和該晶圓20的該表面上的多個電極凸塊/墊產生電連結,如此該測試機台50即可與該晶圓20的該表面上的積體電路(IC)產生信號連結,該測試機台50即可對該晶圓20的該表面上的積體電路(IC)進行測試,故可達成晶圓級的積體電路測試。由上述可知該探針卡10、該晶圓承載盤30及該晶圓20係被容置於該測試空間51的密閉環境中。
Each of the plurality of
該測試機台50可藉由該晶圓承載盤30的溫控裝置並依該晶圓20上的積體電路的一測試溫度將該晶圓20的溫度控制在該測試溫度,如此該晶圓20上的積體電路即可在該測試溫度下進行測試。但是,由於該探針卡10及該複數個探針11的溫度與該晶圓20二者的溫度不同,當二者接觸時,會因熱脹冷縮導致探針卡針尖14的位置因本身溫度的改變而改變,造成探針卡針尖14與晶圓20表面上的多個電極凸塊/墊之間損壞的問題,以致影響探針卡針尖14與該晶圓20表面上的多個電極凸塊/墊之間的電連結。所以在探針卡針尖14與該晶圓20表面上的多個電極凸塊/墊直接接觸前,必須有一探針預熱的過程,以使探針卡針尖14與該晶圓20表面上的多個電極凸塊/墊二者在直接接觸前,即具有非常接近的溫度,以減小該二者間接觸時的熱脹冷縮,避免在直接接觸後造成該二者損壞的問題。
The
在本發明晶圓級探針卡的探針預熱方法中,當該晶圓20與該探針卡針尖14二者直接接觸時,該晶圓20的溫度主要以熱傳導的方式傳至該探針
卡針尖14,來達成該晶圓20與該探針卡針尖14二者的均溫;當該晶圓20與該探針卡針尖14二者靠得很近但沒有直接接觸時,該晶圓20的溫度主要是以熱輻射與空氣熱對流的方式傳至該探針卡針尖14,來達成該晶圓20與該探針卡針尖14二者的均溫。
In the probe preheating method of the wafer-level probe card of the present invention, when the
請參閱圖5所示,圖5顯示本發明所使用的一探針卡經一溫度測試所量測到的一針尖溫度特性曲線,其中該探針卡的探針係沿著z-軸伸展,可知從開始到一第一時間t1(約45分鐘),該探針卡的針尖在z-軸方向的位移變化最大,故稱從時間開始到該第一時間t1的時段為一安全預熱時間,而在接下來從該第一時間t1到一第二時間t2(約135分鐘),該探針卡的針尖在z-軸方向的位移變化較小,故稱從該第一時間t1到該第二時間t2的時段為一有效預熱時間,而在接下來從該第二時間t2到一第三時間t3(約150分鐘),該探針卡的針尖在z-軸方向的位移變化最小,故稱從該第二時間t2到該第三時間t3的時段為一穩定預熱時間,而在接下來從該第三時間t3起,該探針卡的針尖在z-軸方向的位移被判斷已達到穩定狀態。 Please refer to Figure 5. Figure 5 shows a tip temperature characteristic curve measured through a temperature test of a probe card used in the present invention, in which the probe of the probe card is extended along the z-axis. It can be seen that from the beginning to the first time t1 (about 45 minutes), the displacement of the tip of the probe card in the z-axis direction changes the most, so the period from the beginning to the first time t1 is called a safe preheating time , and from the first time t1 to the second time t2 (about 135 minutes), the displacement of the tip of the probe card in the z-axis direction changes little, so it is said that from the first time t1 to the second time t2 The period of the second time t2 is an effective preheating time, and from the second time t2 to a third time t3 (about 150 minutes), the displacement of the tip of the probe card in the z-axis direction changes minimally. , so the period from the second time t2 to the third time t3 is called a stable preheating time, and starting from the third time t3, the displacement of the tip of the probe card in the z-axis direction is It is judged that a stable state has been reached.
關於本發明晶圓級探針卡的探針預熱方法,請參考圖1所示,圖1係顯示本發明的晶圓級積體電路測試系統進行一安全預熱/預冷步驟,首先,該測試機台50藉由執行該應用程式,先將該晶圓承載盤30沿著z-軸方向向上移動,使得該探針卡針尖14中的一第一根針尖12與該晶圓20的該表面上的一電極凸塊/墊直接接觸為止,例如該測試機台50偵測到該探針卡10與該晶圓20之間的電阻從一高阻抗狀態驟減時,即可認定該探針卡針尖14中的一第一根針尖12與該晶圓20的該表面上的一電極凸塊/墊直接接觸,此時該晶圓承載盤30的高度為一安全起始高度;接著該應用程式將該晶圓承載盤30沿著z-軸方向向下移動一非接觸安全距離d1至一安全高度後靜止一安全預熱時間。
Regarding the probe preheating method of the wafer-level probe card of the present invention, please refer to Figure 1. Figure 1 shows the wafer-level integrated circuit testing system of the present invention performing a safe preheating/precooling step. First, By executing the application program, the
承上,當該晶圓承載盤30在該安全高度靜止該安全預熱時間之後,請參考圖2所示,圖2係顯示本發明的晶圓級積體電路測試系統進行一有效預熱/預冷步驟,該應用程式再次將該晶圓承載盤30沿著z-軸方向向上移動,使得該探針卡針尖14中的一第一根針尖12與該晶圓20的該表面上的一電極凸塊/墊直接接觸為止,此時該晶圓承載盤30的高度為一有效起始高度,接著該應用程式將該晶圓承載盤30沿著z-軸方向向下移動一非接觸有效距離d2至一有效高度後靜止一有效預熱時間。為了加快該探針卡針尖14預熱/預冷的時間,該非接觸有效距離d2係小於該非接觸安全距離d1,且該有效預熱時間係大於該安全預熱時間。
Following the above, when the
承上,當該晶圓承載盤30在該有效高度靜止該有效預熱時間之後,請參考圖3所示,圖3係顯示本發明的晶圓級積體電路測試系統進行一穩定預熱/預冷步驟,該應用程式再次將該晶圓承載盤30沿著z-軸方向向上移動,使得該探針卡針尖14中的一第一根針尖12與該晶圓20的該表面上的一電極凸塊/墊直接接觸為止,此時該晶圓承載盤30的高度為一穩定起始高度,接著該應用程式將該晶圓承載盤30沿著z-軸方向向上移動一穩定接觸距離d3至一穩定高度後靜止一穩定預熱時間,此時該晶圓20表面上的電極凸塊/墊與該探針卡針尖14二者之間雖為直接接觸,但該探針卡針尖14施予電極凸塊/墊的壓力係以該穩定接觸距離d3被調節為小於一第一接觸閥值的方式為之,來減小所述壓力以避免產生前述探針卡針尖14與晶圓20表面上的多個電極凸塊/墊損壞的問題。另外,為了加快該探針卡針尖14預熱/預冷的時間,該穩定預熱時間係小於該安全預熱時間。
Following the above, when the
其中,該安全預熱時間、該有效預熱時間與該穩定預熱時間三者之和為一總預熱時間,該安全預熱時間等於該總預熱時間乘以一安全百分比P1%,該有效預熱時間等於該總預熱時間乘以一有效百分比P2%,該穩定預熱 時間等於該總預熱時間乘以一穩定百分比P3%,則P1%+P2%+P3%=100%,且因該有效預熱時間係大於該安全預熱時間,該穩定預熱時間係小於該安全預熱時間已如上述,故P2%>P1%>P3%。或者,也可以以預先給定的一安全百分比P1%、一有效百分比P2%、一穩定百分比P3%及一總預熱時間,以得到該安全預熱時間、該有效預熱時間與該穩定預熱時間三者。由圖5可知:一探針卡經一溫度測試所量測到的一針尖溫度特性曲線,其可用來設定該安全預熱時間、該有效預熱時間與該穩定預熱時間三者,或者由圖5可知:該針尖溫度特性曲線,也可用來設定該安全百分比P1%、該有效百分比P2%、該穩定百分比P3%及該總預熱時間四者。 Wherein, the sum of the safety preheating time, the effective preheating time and the stable preheating time is a total preheating time, the safety preheating time is equal to the total preheating time multiplied by a safety percentage P1%, the The effective preheating time is equal to the total preheating time multiplied by an effective percentage P2%. The stable preheating time The time is equal to the total preheating time multiplied by a stable percentage P3%, then P1%+P2%+P3%=100%, and because the effective preheating time is greater than the safe preheating time, the stable preheating time is less than The safe preheating time is as above, so P2%>P1%>P3%. Alternatively, a predetermined safety percentage P1%, an effective percentage P2%, a stable percentage P3% and a total preheating time can also be used to obtain the safe preheating time, the effective preheating time and the stable preheating time. Hot time three. It can be seen from Figure 5 that a tip temperature characteristic curve measured by a probe card through a temperature test can be used to set the safe preheating time, the effective preheating time and the stable preheating time, or by It can be seen from Figure 5 that the needle tip temperature characteristic curve can also be used to set the safety percentage P1%, the effective percentage P2%, the stable percentage P3% and the total preheating time.
承上,當該晶圓承載盤30在該穩定高度靜止該穩定預熱時間之後,請參考圖4所示,圖4係顯示本發明的晶圓級積體電路測試系統進行一穩定度判斷程序。此時該晶圓20表面上的電極凸塊/墊與該探針卡針尖14二者之間仍保持直接接觸,持續進行預熱/預冷,此時該應用程式將該穩定起始高度的值指定給一前次穩定度判斷起始高度,然後該應用程式將該晶圓承載盤30沿著z-軸方向向下移動,直到該探針卡針尖14沒有與該晶圓20的該表面直接接觸為止,再控制該晶圓承載盤30向上移動,使得該探針卡針尖14的一第一根針尖與該晶圓20的該表面上的一電極凸塊/墊直接接觸為止,此時該晶圓承載盤30的高度為一穩定度判斷起始高度,然後該應用程式將該晶圓承載盤30沿著z-軸方向向上移動一穩定度判斷接觸距離d4至一穩定度判斷高度後,再靜止一穩定度判斷時間,此時該晶圓20表面上的電極凸塊/墊與該探針卡針尖14二者之間係為直接接觸;接著該應用程式將該穩定度判斷起始高度與該前次的穩定度判斷起始高度二者加以比對,若所述二者間的高度差異小於一第二接觸閥值,即代表該探針卡針尖14已達穩定狀態,該應用程式即可自動設置測試針壓以開始測試該晶圓20,若所述二者間的高度差異大於或等於該第二接觸閥值時,該應用程式將該
穩定度判斷起始高度的值指定給一前次穩定度判斷起始高度,然後該應用程式重覆進行上述程序,重新比對本次的該穩定度判斷起始高度與前次的穩定度判斷起始高度二者,直至二者間的高度差異小於該第二接觸閥值。其中,為了加快預熱的時間,該穩定度判斷時間可以小於或等於該穩定預熱時間,但是該穩定度判斷接觸距離d4係等於該穩定接觸距離d3。
Following the above, when the
請參考圖6A、6B所示的本發明晶圓級探針卡的探針預熱方法的流程圖。由上述內容,本發明晶圓級探針卡的探針預熱方法可整理為以下步驟:步驟1:該測試機台控制該晶圓承載盤向該探針卡的方向移動,使得該探針卡針尖中的一第一根針尖與該晶圓的該表面直接接觸為止,此時該晶圓承載盤的高度為一安全起始高度;步驟2:該測試機台控制該晶圓承載盤向遠離該探針卡的方向移動一非接觸安全距離至一安全高度,此時該探針卡針尖與該晶圓的該表面未直接接觸;步驟3:該測試機台控制該晶圓承載盤靜止一安全預熱時間,其中該晶圓的溫度以熱輻射與熱對流的方式傳至該探針卡針尖;步驟4:該測試機台控制該晶圓承載盤向該探針卡的方向移動,使得該探針卡針尖中的一第一根針尖與該晶圓的該表面直接接觸為止,此時該晶圓承載盤的高度為一有效起始高度;步驟5:該測試機台控制該晶圓承載盤向遠離該探針卡的方向移動一非接觸有效距離至一有效高度,此時該探針卡針尖與該晶圓的該表面未直接接觸,該非接觸有效距離係小於該非接觸安全距離;步驟6:該測試機台控制該晶圓承載盤靜止一有效預熱時間,其中該晶圓的溫度以熱輻射與熱對流的方式傳至該探針卡針尖; 步驟7:該測試機台控制該晶圓承載盤向該探針卡的方向移動,使得該探針卡針尖中的一第一根針尖與該晶圓的該表面直接接觸為止,此時該晶圓承載盤的高度為一穩定起始高度;步驟8:該測試機台控制該晶圓承載盤向該探針卡的方向移動一穩定接觸距離至一穩定高度,此時該探針卡針尖與該晶圓的該表面係直接接觸;步驟9:該測試機台控制該晶圓承載盤靜止一穩定預熱時間;其中該晶圓的溫度是以熱傳導的方式傳至該探針卡針尖;步驟10:該測試機台將該穩定起始高度的值指定給一前次穩定度判斷起始高度;步驟11:該測試機台控制該晶圓承載盤向遠離該探針卡的方向移動,直到該探針卡針尖沒有與該晶圓的該表面直接接觸為止,再控制該晶圓承載盤向該探針卡的方向移動,使得該探針卡針尖的一第一根針尖與該晶圓的該表面直接接觸為止,此時該晶圓承載盤的高度為一穩定度判斷起始高度;步驟12:該測試機台控制該晶圓承載盤向該探針卡的方向移動至一穩定度判斷高度,此時該探針卡針尖與該晶圓的該表面係直接接觸;步驟13:該測試機台控制該晶圓承載盤靜止一穩定度判斷時間;步驟14:該測試機台比對該穩定度判斷起始高度與該前次穩定度判斷起始高度二者,若所述二者間的高度差異小於一第二接觸閥值,流程結束;步驟15:若所述二者間的高度差異大於或等於該第二接觸閥值,該測試機台將該穩定度判斷起始高度的值指定給一前次穩定度判斷起始高度,回到步驟11。 Please refer to the flow chart of the probe preheating method of the wafer-level probe card of the present invention shown in FIGS. 6A and 6B. From the above, the probe preheating method of the wafer-level probe card of the present invention can be organized into the following steps: Step 1: The test machine controls the wafer carrier to move in the direction of the probe card, so that the probe Until a first needle tip among the card needles is in direct contact with the surface of the wafer, the height of the wafer carrier is a safe starting height; Step 2: The test machine controls the direction of the wafer carrier Move a non-contact safety distance away from the probe card to a safe height. At this time, the tip of the probe card is not in direct contact with the surface of the wafer; Step 3: The test machine controls the wafer carrier to remain stationary. A safe preheating time, during which the temperature of the wafer is transmitted to the tip of the probe card through heat radiation and heat convection; Step 4: The test machine controls the wafer carrier to move in the direction of the probe card, Until a first tip of the probe card tip is in direct contact with the surface of the wafer, the height of the wafer carrier is an effective starting height; Step 5: The test machine controls the wafer The circular carrier moves a non-contact effective distance away from the probe card to an effective height. At this time, the tip of the probe card is not in direct contact with the surface of the wafer, and the non-contact effective distance is smaller than the non-contact safety distance. ; Step 6: The test machine controls the wafer carrier to stand still for an effective preheating time, in which the temperature of the wafer is transmitted to the tip of the probe card through thermal radiation and thermal convection; Step 7: The test machine controls the wafer carrier to move in the direction of the probe card until a first needle tip of the probe card directly contacts the surface of the wafer. At this time, the wafer The height of the circular carrier is a stable starting height; Step 8: The test machine controls the wafer carrier to move in the direction of the probe card by a stable contact distance to a stable height. At this time, the tip of the probe card is in contact with the probe card. The surface of the wafer is in direct contact; Step 9: The test machine controls the wafer carrier to remain stationary for a stable preheating time; wherein the temperature of the wafer is transmitted to the tip of the probe card through thermal conduction; Step 10: The testing machine assigns the value of the stable starting height to a previous stability judgment starting height; Step 11: The testing machine controls the wafer carrier to move away from the probe card until Until the tip of the probe card is not in direct contact with the surface of the wafer, the wafer carrier is controlled to move in the direction of the probe card, so that a first tip of the probe card tip is in contact with the surface of the wafer. Until the surface is in direct contact, the height of the wafer carrier is a stability judgment starting height; Step 12: The test machine controls the wafer carrier to move in the direction of the probe card to a stability judgment At this time, the tip of the probe card is in direct contact with the surface of the wafer; Step 13: The test machine controls the wafer carrier to be stationary for a stability judgment time; Step 14: The test machine compares the The starting height of the stability judgment and the starting height of the previous stability judgment, if the height difference between the two is less than a second contact threshold, the process ends; Step 15: If the height difference between the two If the difference is greater than or equal to the second contact threshold, the testing machine assigns the value of the stability judgment starting height to a previous stability judgment starting height, and returns to step 11.
本發明所揭露的晶圓級探針卡的探針預熱方法係先經過非接觸式的一安全預熱/預冷步驟及一有效預熱/預冷步驟,以安全的進入接觸式的一穩定預熱/預冷步驟,最後才進入接觸式的一穩定度判斷程序,亦即本發明所揭 露的晶圓級探針卡的探針預熱方法係以漸進的方式,進行晶圓級探針卡的探針預熱,如此既可以較短的時間使探針卡針尖達到穩定狀態,同時也避免在探針卡針尖與晶圓接觸時,因熱漲冷縮造成探針卡針尖與IC產品的腳位損壞的問題,可達成本發明的目的。 The probe preheating method of the wafer-level probe card disclosed in the present invention first goes through a non-contact safe preheating/precooling step and an effective preheating/precooling step to safely enter a contact type. Stable preheating/precooling steps, and finally enter a contact-type stability judgment process, which is the process disclosed by the present invention. The exposed probe preheating method of the wafer level probe card is to preheat the probe of the wafer level probe card in a gradual manner, so that the probe card tip can reach a stable state in a short time, and at the same time It also avoids the problem of damage to the pins of the probe card tip and the IC product due to thermal expansion and cold contraction when the probe card tip is in contact with the wafer, thereby achieving the purpose of the present invention.
1:晶圓級積體電路測試系統 1: Wafer-level integrated circuit test system
10:探針卡 10: Probe card
11:探針 11:Probe
12:針尖 12: needle tip
14:探針卡針尖 14: Probe card tip
20:晶圓 20:wafer
30:晶圓承載盤 30:Wafer carrier
50:測試機台 50:Testing machine
51:測試空間 51:Test space
d1:非接觸安全距離 d1: non-contact safety distance
Claims (8)
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW396475B (en) * | 1997-10-20 | 2000-07-01 | Tokyo Electron Ltd | Probe method and apparataus |
WO2012096099A1 (en) * | 2011-01-13 | 2012-07-19 | 東京エレクトロン株式会社 | Method for thermal stabilization of probe card and inspection device |
TW201234029A (en) * | 2010-09-13 | 2012-08-16 | Tokyo Electron Ltd | Wafer inspection apparatus and method for pre-heating probe card |
US20200174063A1 (en) * | 2018-12-04 | 2020-06-04 | Spirox Corporation | Method and apparatus for testing semiconductor devices with preheating |
US20200408835A1 (en) * | 2019-06-27 | 2020-12-31 | Tokyo Electron Limited | Prober and method of preheating probe card |
CN112735967A (en) * | 2020-12-29 | 2021-04-30 | 上海集成电路研发中心有限公司 | Testing method for wafer temperature change test |
-
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- 2022-07-25 TW TW111127726A patent/TWI834227B/en active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW396475B (en) * | 1997-10-20 | 2000-07-01 | Tokyo Electron Ltd | Probe method and apparataus |
TW201234029A (en) * | 2010-09-13 | 2012-08-16 | Tokyo Electron Ltd | Wafer inspection apparatus and method for pre-heating probe card |
WO2012096099A1 (en) * | 2011-01-13 | 2012-07-19 | 東京エレクトロン株式会社 | Method for thermal stabilization of probe card and inspection device |
TW201245739A (en) * | 2011-01-13 | 2012-11-16 | Tokyo Electron Ltd | Method for thermal stabilization of probe card and inspection device |
CN103299411A (en) * | 2011-01-13 | 2013-09-11 | 东京毅力科创株式会社 | Method for thermal stabilization of probe card and inspection device |
US20200174063A1 (en) * | 2018-12-04 | 2020-06-04 | Spirox Corporation | Method and apparatus for testing semiconductor devices with preheating |
US20200408835A1 (en) * | 2019-06-27 | 2020-12-31 | Tokyo Electron Limited | Prober and method of preheating probe card |
CN112230028A (en) * | 2019-06-27 | 2021-01-15 | 东京毅力科创株式会社 | Probe and probe card preheating method |
CN112735967A (en) * | 2020-12-29 | 2021-04-30 | 上海集成电路研发中心有限公司 | Testing method for wafer temperature change test |
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