TWI834148B - 電漿處理裝置 - Google Patents
電漿處理裝置 Download PDFInfo
- Publication number
- TWI834148B TWI834148B TW111114018A TW111114018A TWI834148B TW I834148 B TWI834148 B TW I834148B TW 111114018 A TW111114018 A TW 111114018A TW 111114018 A TW111114018 A TW 111114018A TW I834148 B TWI834148 B TW I834148B
- Authority
- TW
- Taiwan
- Prior art keywords
- cathode electrode
- hollow cathode
- flat
- cooling body
- plasma
- Prior art date
Links
- 238000009832 plasma treatment Methods 0.000 title description 21
- 238000012545 processing Methods 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims description 44
- 239000004020 conductor Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 9
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 3
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Treatment Of Fiber Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/035547 WO2023053171A1 (ja) | 2021-09-28 | 2021-09-28 | プラズマ処理装置 |
| WOPCT/JP2021/035547 | 2021-09-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202315464A TW202315464A (zh) | 2023-04-01 |
| TWI834148B true TWI834148B (zh) | 2024-03-01 |
Family
ID=85781464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111114018A TWI834148B (zh) | 2021-09-28 | 2022-04-13 | 電漿處理裝置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7512567B2 (https=) |
| CN (1) | CN117204124A (https=) |
| TW (1) | TWI834148B (https=) |
| WO (1) | WO2023053171A1 (https=) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW462081B (en) * | 1999-11-02 | 2001-11-01 | Hitachi Int Electric Inc | Plasma CVD system and plasma CVD film deposition method |
| TWI418262B (zh) * | 2008-07-29 | 2013-12-01 | Psk有限公司 | 產生中空陰極電漿之方法及使用中空陰極電漿處理大面積基板之方法 |
| JP6745643B2 (ja) * | 2016-05-17 | 2020-08-26 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4801839A (en) * | 1986-12-08 | 1989-01-31 | Applied Electron Corporation | Mounting of a cold cathode directly to a vacuum chamber wall |
| JPH0648826Y2 (ja) * | 1988-07-25 | 1994-12-12 | 三井東圧化学株式会社 | 着脱式の放電電極 |
| JP2705190B2 (ja) * | 1989-02-16 | 1998-01-26 | 富士通株式会社 | ドライエッチング装置 |
| JP3113796B2 (ja) * | 1995-07-10 | 2000-12-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4493932B2 (ja) * | 2003-05-13 | 2010-06-30 | 東京エレクトロン株式会社 | 上部電極及びプラズマ処理装置 |
| JP2008028087A (ja) * | 2006-07-20 | 2008-02-07 | Nisshinbo Ind Inc | プラズマエッチング電極 |
| JP5227239B2 (ja) * | 2009-04-13 | 2013-07-03 | 新明和工業株式会社 | ホローカソード型放電管 |
| JP5614180B2 (ja) * | 2010-09-01 | 2014-10-29 | 東レ株式会社 | プラズマｃｖｄ装置 |
| CA2867451C (en) * | 2013-10-28 | 2021-06-29 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
| JP7246154B2 (ja) * | 2018-10-02 | 2023-03-27 | 東京エレクトロン株式会社 | プラズマ処理装置及び静電吸着方法 |
| JP7134863B2 (ja) * | 2018-12-27 | 2022-09-12 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
-
2021
- 2021-09-28 CN CN202180097632.2A patent/CN117204124A/zh active Pending
- 2021-09-28 JP JP2023550761A patent/JP7512567B2/ja active Active
- 2021-09-28 WO PCT/JP2021/035547 patent/WO2023053171A1/ja not_active Ceased
-
2022
- 2022-04-13 TW TW111114018A patent/TWI834148B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW462081B (en) * | 1999-11-02 | 2001-11-01 | Hitachi Int Electric Inc | Plasma CVD system and plasma CVD film deposition method |
| TWI418262B (zh) * | 2008-07-29 | 2013-12-01 | Psk有限公司 | 產生中空陰極電漿之方法及使用中空陰極電漿處理大面積基板之方法 |
| JP6745643B2 (ja) * | 2016-05-17 | 2020-08-26 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023053171A1 (https=) | 2023-04-06 |
| WO2023053171A1 (ja) | 2023-04-06 |
| TW202315464A (zh) | 2023-04-01 |
| CN117204124A (zh) | 2023-12-08 |
| JP7512567B2 (ja) | 2024-07-09 |
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