TWI812869B - 磁性記錄媒體用濺鍍靶 - Google Patents
磁性記錄媒體用濺鍍靶 Download PDFInfo
- Publication number
- TWI812869B TWI812869B TW109124056A TW109124056A TWI812869B TW I812869 B TWI812869 B TW I812869B TW 109124056 A TW109124056 A TW 109124056A TW 109124056 A TW109124056 A TW 109124056A TW I812869 B TWI812869 B TW I812869B
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetic
- mol
- sputtering target
- oxide
- phase
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 361
- 238000005477 sputtering target Methods 0.000 title claims abstract description 103
- 239000002184 metal Substances 0.000 claims abstract description 113
- 229910052751 metal Inorganic materials 0.000 claims abstract description 113
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 76
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 75
- 229910052796 boron Inorganic materials 0.000 claims abstract description 30
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 24
- 239000012535 impurity Substances 0.000 claims abstract description 17
- 229910052804 chromium Inorganic materials 0.000 claims description 29
- 229910052707 ruthenium Inorganic materials 0.000 claims description 18
- 229910052684 Cerium Inorganic materials 0.000 claims description 9
- 229910052693 Europium Inorganic materials 0.000 claims description 9
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 9
- 229910052765 Lutetium Inorganic materials 0.000 claims description 9
- 229910052779 Neodymium Inorganic materials 0.000 claims description 9
- 229910052772 Samarium Inorganic materials 0.000 claims description 9
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- 229910052727 yttrium Inorganic materials 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000013078 crystal Substances 0.000 description 123
- 239000000843 powder Substances 0.000 description 112
- 229910045601 alloy Inorganic materials 0.000 description 68
- 239000000956 alloy Substances 0.000 description 68
- 230000000052 comparative effect Effects 0.000 description 65
- 239000010409 thin film Substances 0.000 description 45
- 239000010408 film Substances 0.000 description 44
- 238000005245 sintering Methods 0.000 description 38
- 230000007423 decrease Effects 0.000 description 36
- 239000010410 layer Substances 0.000 description 36
- 239000000203 mixture Substances 0.000 description 33
- 229910018979 CoPt Inorganic materials 0.000 description 31
- 230000006911 nucleation Effects 0.000 description 24
- 238000010899 nucleation Methods 0.000 description 24
- 239000011812 mixed powder Substances 0.000 description 22
- 238000000926 separation method Methods 0.000 description 22
- 238000004544 sputter deposition Methods 0.000 description 22
- 229910004298 SiO 2 Inorganic materials 0.000 description 20
- 229910010413 TiO 2 Inorganic materials 0.000 description 18
- 229910052810 boron oxide Inorganic materials 0.000 description 16
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 239000002245 particle Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 230000008018 melting Effects 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 9
- 230000005415 magnetization Effects 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000007731 hot pressing Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 5
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 5
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 5
- 229910002064 alloy oxide Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910000905 alloy phase Inorganic materials 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000005389 magnetism Effects 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 238000009689 gas atomisation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000006249 magnetic particle Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 101100457021 Caenorhabditis elegans mag-1 gene Proteins 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 101100067996 Mus musculus Gbp1 gene Proteins 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000010415 tropism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/656—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019132859 | 2019-07-18 | ||
| JP2019-132859 | 2019-07-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202120720A TW202120720A (zh) | 2021-06-01 |
| TWI812869B true TWI812869B (zh) | 2023-08-21 |
Family
ID=74210926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109124056A TWI812869B (zh) | 2019-07-18 | 2020-07-16 | 磁性記錄媒體用濺鍍靶 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12230485B2 (https=) |
| JP (1) | JP7462636B2 (https=) |
| CN (1) | CN114144541B (https=) |
| TW (1) | TWI812869B (https=) |
| WO (1) | WO2021010490A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250182963A1 (en) * | 2022-03-11 | 2025-06-05 | Georgetown University | Boron-Based and High-Entropy Magnetic Materials |
| CN121219435A (zh) * | 2024-04-25 | 2025-12-26 | Ｊｘ金属株式会社 | 磁性材料靶材和磁性材料靶材组装件 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016160530A (ja) * | 2015-03-05 | 2016-09-05 | 光洋應用材料科技股▲分▼有限公司 | 磁気合金スパッタリングターゲット及び磁気記録媒体用記録層 |
| TW201835361A (zh) * | 2016-12-28 | 2018-10-01 | 日商Ｊｘ金屬股份有限公司 | 磁性材濺鍍靶及其製造方法 |
| CN108884557A (zh) * | 2016-03-31 | 2018-11-23 | 捷客斯金属株式会社 | 强磁性材料溅射靶 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5988807A (ja) * | 1982-11-12 | 1984-05-22 | Nec Corp | 磁気記憶体 |
| JPH11175944A (ja) * | 1997-12-10 | 1999-07-02 | Hitachi Ltd | 磁気記録媒体及び磁気記憶装置 |
| US20060042938A1 (en) | 2004-09-01 | 2006-03-02 | Heraeus, Inc. | Sputter target material for improved magnetic layer |
| CN103180481B (zh) | 2010-12-22 | 2015-04-08 | 吉坤日矿日石金属株式会社 | 强磁性材料溅射靶 |
| JP6284126B2 (ja) * | 2014-12-15 | 2018-02-28 | 昭和電工株式会社 | 垂直記録媒体、垂直記録再生装置 |
| JP6958819B2 (ja) | 2016-11-01 | 2021-11-02 | 田中貴金属工業株式会社 | 磁気記録媒体用スパッタリングターゲット |
-
2020
- 2020-07-16 US US17/628,065 patent/US12230485B2/en active Active
- 2020-07-16 WO PCT/JP2020/028611 patent/WO2021010490A1/ja not_active Ceased
- 2020-07-16 CN CN202080051547.8A patent/CN114144541B/zh active Active
- 2020-07-16 TW TW109124056A patent/TWI812869B/zh active
- 2020-07-16 JP JP2021533123A patent/JP7462636B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016160530A (ja) * | 2015-03-05 | 2016-09-05 | 光洋應用材料科技股▲分▼有限公司 | 磁気合金スパッタリングターゲット及び磁気記録媒体用記録層 |
| CN108884557A (zh) * | 2016-03-31 | 2018-11-23 | 捷客斯金属株式会社 | 强磁性材料溅射靶 |
| TW201835361A (zh) * | 2016-12-28 | 2018-10-01 | 日商Ｊｘ金屬股份有限公司 | 磁性材濺鍍靶及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2021010490A1 (https=) | 2021-01-21 |
| CN114144541B (zh) | 2024-12-10 |
| CN114144541A (zh) | 2022-03-04 |
| JP7462636B2 (ja) | 2024-04-05 |
| US20220262608A1 (en) | 2022-08-18 |
| WO2021010490A1 (ja) | 2021-01-21 |
| TW202120720A (zh) | 2021-06-01 |
| US12230485B2 (en) | 2025-02-18 |
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