TWI811539B - Bonding device - Google Patents

Bonding device Download PDF

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TWI811539B
TWI811539B TW109115141A TW109115141A TWI811539B TW I811539 B TWI811539 B TW I811539B TW 109115141 A TW109115141 A TW 109115141A TW 109115141 A TW109115141 A TW 109115141A TW I811539 B TWI811539 B TW I811539B
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wafer
bonding
substrate
stage
guide member
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TW109115141A
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Chinese (zh)
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TW202109685A (en
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向井康人
玉村友宏
米光智史
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日商澁谷工業股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/02—Feeding of components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H05K13/0404—Pick-and-place heads or apparatus, e.g. with jaws
    • H05K13/0408—Incorporating a pick-up tool
    • H05K13/0409—Sucking devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

An object of the invention is to provide a bonding device 3 which can be operated efficiently while reducing as much as possible displacement errors and mechanical errors caused by moving units. The invention relates to a bonding device 3 comprising a substrate supply unit 6 which supplies a substrate 2 to a bonding stage 4, a chip supply unit 7 which supplies a chip 1 to an intermediate stage 5, and a bonding head 8 which bonds the chip 1 to the substrate 2 on the bonding stage 4. A guide member 9 is provided oriented in a horizontal first direction (X direction), the substrate supply unit 6, the chip supply unit 7 and the bonding head 8 are disposed along this guide member 9, and the bonding stage and the intermediate stage are moved along the guide member by a bonding stage moving unit and and an intermediate stage moving unit.

Description

接合裝置joint device

本發明係關於接合裝置，詳言之，係關於將晶片接合於基板的接合裝置。The present invention relates to a bonding device, and more specifically, to a bonding device for bonding a wafer to a substrate.

習知之將晶片接合於基板的接合裝置，其具備：載置基板之接合台；載置上述晶片之中繼台；對上述接合台供給基板之基板供給手段；對上述中繼台供給晶片之晶片供給手段；及將晶片接合於基板之接合頭。 於上述構成中，藉由使上述接合台及中繼台各自利用移動手段移動，而將基板或晶片搬運至接合頭。 在此，為了將基板及晶片正確地接合，必須使上述移動手段所進行之基板或晶片的移動能正確執行，然而實際上，因有移動手段的移動誤差或機械性誤差，故有必要進行調整。 因此，吾人已知有例如藉由將上述中繼台及接合台設為一體並使其一體移動，而使移動誤差或機械性誤差減少之發明(專利文獻1)。 [先前技術文獻] [專利文獻]A conventional bonding device for bonding a wafer to a substrate includes: a bonding stage on which the substrate is placed; a relay stage on which the wafer is placed; a substrate supply means that supplies the substrate to the bonding stage; and a wafer that supplies the wafer to the relay stage. supply means; and a bonding head for bonding the wafer to the substrate. In the above structure, the substrate or wafer is transported to the bonding head by moving each of the bonding stage and the relay stage using the moving means. Here, in order to accurately bond the substrate and the wafer, the movement of the substrate or the wafer by the above-mentioned moving means must be performed correctly. However, in reality, due to movement errors or mechanical errors of the moving means, adjustment is necessary. . Therefore, for example, there is known an invention that reduces movement errors or mechanical errors by integrating the above-mentioned relay station and the joint station and moving them integrally (Patent Document 1). [Prior technical literature] [Patent Document]

[專利文獻1]日本特開2010-238974號公報[Patent Document 1] Japanese Patent Application Publication No. 2010-238974

[發明欲解決之問題][Problem to be solved by invention]

然而，上述專利文獻1的構成，由於將中繼台與接合台構成為一體，故難以個別地進行對於接合台的作業及對於中繼台的作業，且晶片供給手段或基板供給手段的配置亦受到限制。 有鑑於此，本發明旨在提供一種接合裝置，其能儘量地減少移動手段所造成的移動誤差或機械性誤差，同時能進行有效率的動作。 [解決問題之方法]However, in the structure of the above-mentioned Patent Document 1, since the relay station and the bonding station are integrated, it is difficult to perform operations on the bonding station and the relay station separately, and the arrangement of the wafer supply means or the substrate supply means is also difficult. restricted. In view of this, the present invention aims to provide a joint device that can minimize the movement error or mechanical error caused by the movement means and at the same time perform efficient operations. [Methods to solve problems]

亦即，請求項1的發明之接合裝置，其具備：接合台，載置有基板；接合台移動手段，使該接合台移動；中繼台，載置有晶片；中繼台移動手段，使該中繼台移動；基板供給手段，對該接合台供給該基板；晶片供給手段，對該中繼台供給該晶片；及接合頭，從該中繼台取出該晶片並將該晶片接合於該接合台上的該基板； 設置朝著水平的第1方向所設之導引構件，並沿著該導引構件配置該基板供給手段、該晶片供給手段及該接合頭； 該接合台移動手段及中繼台移動手段，使該接合台及該中繼台沿著該導引構件移動。 又，請求項2的發明，其係於請求項1的接合裝置中，該接合頭具有能進行下述接合的構成：面向下接合，於該晶片的主面朝下方的狀態下固持該晶片，並將該主面接合於該基板；及面向上接合，於該晶片的主面朝上方的狀態下固持該晶片，並於維持該主面朝上方的狀況下將該晶片接合於該基板， 沿著該導引構件設置：基板拍攝手段，從上方拍攝載置於該接合台的該基板；及晶片頂面拍攝手段，於進行面向上接合時，從上方拍攝載置於該中繼台的該晶片的主面， 更沿著該導引構件以可移動方式設置：晶片底面拍攝手段，於進行面向下接合時，從下方拍攝固持於該接合頭的該晶片的主面。 再者，請求項3的發明，其係於請求項2的接合裝置中，具備用以進行該基板拍攝手段、該晶片頂面拍攝手段及該晶片底面拍攝手段的校準作業之目標記號，並設置該目標記號使其可沿著該導引構件移動， 於為了進行該面向下接合而進行該基板拍攝手段及該晶片底面拍攝手段的校準作業時， 使該目標記號位於該晶片底面拍攝手段的上方及該基板拍攝手段的下方，並藉由該晶片底面拍攝手段及該基板拍攝手段拍攝該目標記號， 於為了進行該面向上接合而進行該基板拍攝手段及該晶片頂面拍攝手段的校準作業時， 使該目標記號位於該晶片頂面拍攝手段的下方及該基板拍攝手段的下方，並藉由該晶片頂面拍攝手段及該基板拍攝手段拍攝該目標記號。 [發明效果]That is, the bonding device of the invention of claim 1 includes: a bonding stage on which a substrate is placed; bonding stage moving means for moving the bonding stage; a relay stage on which a chip is placed; and a relay stage moving means for moving the bonding stage. The relay station moves; a substrate supply means supplies the substrate to the bonding station; a wafer supply means supplies the wafer to the relay station; and a bonding head takes out the wafer from the relay station and bonds the wafer to the relay station. the substrate on the bonding table; Provide a guide member facing a horizontal first direction, and arrange the substrate supply means, the wafer supply means and the bonding head along the guide member; The joining station moving means and the relay station moving means move the joining stage and the relay station along the guide member. Furthermore, the invention of Claim 2 is in the bonding device of Claim 1, wherein the bonding head has a structure capable of bonding face-down and holding the wafer in a state where the main surface of the wafer faces downward, and bonding the main surface to the substrate; and bonding face up, holding the wafer with the main surface facing upward, and bonding the wafer to the substrate while maintaining the main surface facing upward, Provided along the guide member: a substrate photographing means for photographing the substrate placed on the bonding stage from above; and a wafer top surface photographing means for photographing the substrate placed on the relay stage from above during face-up bonding. The main surface of the wafer, Furthermore, a wafer bottom surface photographing means is movably provided along the guide member to photograph the main surface of the wafer held on the bonding head from below during face-down bonding. Furthermore, according to the invention of claim 3, the bonding device of claim 2 is provided with target marks for calibrating the substrate imaging means, the wafer top surface imaging means, and the wafer bottom surface imaging means, and is provided with The target mark enables movement along the guide member, When calibrating the substrate imaging means and the wafer bottom surface imaging means for the surface-down bonding, The target mark is positioned above the wafer bottom surface photographing means and below the substrate photographing means, and the target mark is photographed by the wafer bottom surface photographing means and the substrate photographing means, When calibrating the substrate imaging means and the wafer top surface imaging means for performing the surface-up bonding, The target mark is positioned below the wafer top surface imaging means and the substrate imaging means, and the target mark is photographed by the wafer top surface imaging means and the substrate imaging means. [Effects of the invention]

依據上述請求項1的發明，沿著導引構件設置基板供給手段、晶片供給手段、接合頭，使接合台及中繼台能沿著此導引構件於第1方向移動。 亦即，接合台及中繼台，因沿著共用的導引構件於第1方向移動，故不易產生接合台與中繼台往第1方向之機械性誤差。 另一方面，接合台及中繼台因可藉由接合台移動手段及中繼台移動手段而個別移動，故對於接合台及中繼台的作業可獨立進行，可進行有效率的接合。 依據上述請求項2的發明，可使面向上接合及面向下接合併用進行，且藉由請求項3的發明，能進行設置於如此之面向上接合及面向下接合能兼用之接合裝置的拍攝手段的校準作業。According to the invention of claim 1, the substrate supply means, the wafer supply means, and the bonding head are provided along the guide member, so that the bonding stage and the relay stage can move in the first direction along the guide member. That is, since the joint stage and the relay stage move in the first direction along the common guide member, it is less likely to cause a mechanical error between the joint stage and the relay stage in the first direction. On the other hand, since the splicing station and the relay station can be moved individually by the splicing station moving means and the relay station moving means, the operations of the splicing station and the relay station can be performed independently, and efficient splicing can be performed. According to the invention of Claim 2, it is possible to perform both face-up joining and face-down joining, and with the invention of Claim 3, it is possible to provide a photographing means provided with a joining device capable of both face-up joining and face-down joining. calibration work.

以下，針對圖示實施例進行說明，圖1係將晶片1接合於基板2之接合裝置3的構成圖，於上述晶片1的任一面，形成電極、LED的發光部或電路圖案等，於以下說明中，將形成有如此電極等的面稱為晶片1的主面。 此外，本實施例的接合裝置3，可進行：面向上接合，於晶片1的主面朝向上方的狀態下接合於基板2；及面向下接合，於晶片1的主面朝向下方的狀態下接合於上述基板2。Hereinafter, the illustrated embodiment will be described. FIG. 1 is a structural diagram of a bonding device 3 for bonding a wafer 1 to a substrate 2. On any side of the wafer 1, electrodes, LED light-emitting portions, circuit patterns, etc. are formed. As follows: In the description, the surface on which such electrodes and the like are formed is called the main surface of the wafer 1 . In addition, the bonding device 3 of this embodiment can perform: face-up bonding, bonding to the substrate 2 with the main surface of the wafer 1 facing upward; and face-down bonding, with the main surface of the wafer 1 facing downward. Joined to the above-mentioned substrate 2.

上述接合裝置3具備：接合台4，載置有上述基板2；中繼台5，載置有上述晶片1；基板供給手段6，對上述接合台4供給上述基板2；晶片供給手段7，對上述中繼台5供給晶片1；及接合頭8，將上述晶片1接合於基板2。 在此，於以下說明中，將作為本發明的第1方向之X方向，以圖1的圖示左右方向表示，將作為第2方向之Y方向，以圖1的紙面深度方向表示，並以圖示上下方向作為Z方向進行說明。 本實施例的接合裝置3中，朝著上述X方向設有第1導引構件9，且分別於該第1導引構件9的圖示右側端，配置有上述基板供給手段6；於中央部，配置有接合頭8；於左側端，配置有上述晶片供給手段7。 又，上述接合台4及中繼台5，各自藉由接合台移動手段10及中繼台移動手段11而沿著上述第1導引構件9個別移動。 具有如此構成的接合裝置3，係由控制手段12所控制，藉由事先進行設定，亦可進行面向上接合與面向下接合之切換。The bonding device 3 includes a bonding stage 4 on which the substrate 2 is placed, a relay stage 5 on which the wafer 1 is placed, a substrate supply means 6 which supplies the substrate 2 to the bonding stage 4, and a wafer supply means 7 which supplies the substrate 2 to the bonding stage 4. The relay station 5 supplies the wafer 1; and the bonding head 8 bonds the wafer 1 to the substrate 2. Here, in the following description, the X direction, which is the first direction of the present invention, is represented by the left-right direction in the diagram of FIG. 1 , and the Y direction, which is the second direction, is represented by the depth direction of the paper surface of FIG. 1 , and is represented by The up and down direction in the figure will be described as the Z direction. In the bonding device 3 of this embodiment, a first guide member 9 is provided in the X direction, and the substrate supply means 6 are arranged at the right end of the first guide member 9 in the figure; , the bonding head 8 is arranged; at the left end, the above-mentioned wafer supply means 7 is arranged. In addition, the above-mentioned joining station 4 and relay station 5 are individually moved along the above-mentioned first guide member 9 by the joining station moving means 10 and the relay station moving means 11 . The joining device 3 having such a structure is controlled by the control means 12, and can be switched between face-up joining and face-down joining by setting in advance.

上述接合台4具有於當將上述基板2載置於其頂面時以未圖示的吸附機構將該基板2加以吸附固持之構成，又，藉由未圖示的加熱器，可於接合時加熱上述基板2。 圖2係上述接合台4的俯視圖，設置成橫跨由平行設置於X方向的一對軌條所構成之上述第1導引構件9。 上述接合台移動手段10，係由沿著上述第1導引構件9於X方向移動之X滑動件10a、於該X滑動件10a頂面朝著Y方向設置之1對Y方向導引構件10b、及沿著該Y方向導引構件10b於上述Y方向移動之Y滑動件10c所構成，於上述Y滑動件10c的上部，固定有上述接合台4。 又，圖2所示的基板2係接合有一晶片1的構成，但亦可為能接合多個晶片1的基板2。The bonding stage 4 is configured to adsorb and hold the substrate 2 with an adsorption mechanism (not shown) when the substrate 2 is placed on its top surface. In addition, a heater (not shown) can be used to hold the substrate 2 during bonding. The above-mentioned substrate 2 is heated. FIG. 2 is a top view of the joining platform 4 , which is installed across the first guide member 9 composed of a pair of rails arranged parallel to the X direction. The above-mentioned joining table moving means 10 is composed of an X slider 10a that moves in the X direction along the first guide member 9, and a pair of Y-direction guide members 10b provided on the top surface of the X slider 10a facing the Y direction. , and a Y slider 10c that moves in the Y direction along the Y-direction guide member 10b. The above-mentioned joining table 4 is fixed to the upper part of the above-mentioned Y slider 10c. In addition, the substrate 2 shown in FIG. 2 has a structure in which one wafer 1 is bonded, but it may be a substrate 2 capable of bonding a plurality of wafers 1 .

上述中繼台5與上述接合台4相同，具有當將上述晶片1載置於其頂面時以未圖示的吸附機構將該晶片1加以吸附固持的構成，於進行上述面向上接合時，在晶片1的主面朝著上方的狀態下固持，於進行面向下接合時，在晶片1的主面朝下方的狀態下固持。 上述中繼台移動手段11，亦係由沿著上述第1導引構件9於X方向移動之X滑動件11a、於該X滑動件11a頂面朝著Y方向設置之Y方向導引構件11b、及沿著該Y方向導引構件10b於上述Y方向移動之Y滑動件11c所構成，於上述Y滑動件11c的上部，固定有上述中繼台5。The relay stage 5 is the same as the bonding stage 4. When the wafer 1 is placed on the top surface, the wafer 1 is sucked and held by an adsorption mechanism (not shown). When the above-mentioned surface-up bonding is performed, The wafer 1 is held with its main surface facing upward. When performing face-down bonding, the wafer 1 is held with its main surface facing downward. The relay station moving means 11 also includes an X slider 11a that moves in the X direction along the first guide member 9, and a Y-direction guide member 11b provided on the top surface of the X slider 11a facing the Y direction. , and a Y slider 11c that moves in the Y direction along the Y-direction guide member 10b. The relay station 5 is fixed to the upper part of the Y slider 11c.

上述基板供給手段6，由下述構件所構成：基板儲存庫21，收容晶片1接合前的基板2；產品儲存庫22，收容已接合晶片1並產品化的基板2；基板固持頭23，固持上述基板2；及基板固持頭移動手段24，使該基板固持頭23移動。 上述基板固持頭23具有將基板2頂面予以吸附固持的構成，上述基板固持頭移動手段24具備於X方向設於上述第1導引構件9上部之第2導引構件24a，更具有使上述基板固持頭23沿著第2導引構件24a於X方向移動且於Z方向升降之機構。 於第2導引構件24a的下方，於X方向排列設置有上述基板儲存庫21及產品儲存庫22，又，該第2導引構件24a的圖示左側的端部，係重疊於上述第1導引構件9的圖示右側的端部而設置。 又，於上述第2導引構件24a與第1導引構件9重疊的部分，設定有上述接合台4及上述基板固持頭23停止並遞送基板2之基板供給位置A。 又，亦可設為能於Y方向移動上述基板固持頭23之構成，且設為使上述基板儲存庫21及產品儲存庫22於Y方向排列之構成，又，亦可設置2個基板固持頭23，將其中一者用於對上述接合台4遞送基板2，並將另一者用於從接合台4取出基板2。The above-mentioned substrate supply means 6 is composed of the following components: a substrate storage 21 that stores the substrate 2 before the wafer 1 is bonded; a product storage 22 that stores the substrate 2 that has been bonded to the wafer 1 and has been manufactured; and a substrate holding head 23 that holds the wafer 1. The above-mentioned substrate 2; and the substrate holding head moving means 24 move the substrate holding head 23. The above-mentioned substrate holding head 23 has a structure that adsorbs and holds the top surface of the substrate 2. The above-mentioned substrate holding head moving means 24 is provided with a second guide member 24a provided on the upper part of the above-mentioned first guide member 9 in the X direction, and further has the above-mentioned The substrate holding head 23 moves in the X direction along the second guide member 24a and is raised and lowered in the Z direction. Below the second guide member 24a, the above-mentioned substrate storage 21 and the product storage 22 are arranged in an array in the The guide member 9 is provided at the right end in the figure. In addition, a substrate supply position A where the bonding stage 4 and the substrate holding head 23 stop and deliver the substrate 2 is set at a portion where the second guide member 24 a overlaps the first guide member 9 . Furthermore, the substrate holding head 23 may be moved in the Y direction, and the substrate storage 21 and the product storage 22 may be arranged in the Y direction. Alternatively, two substrate holding heads may be provided. 23, one of them is used to deliver the substrate 2 to the above-mentioned bonding stage 4, and the other is used to take out the substrate 2 from the bonding stage 4.

上述晶片供給手段7具備：晶片供給部31，供給晶片1；晶片固持頭32，固持該晶片供給部31的晶片1；晶片固持頭移動手段33，使該晶片固持頭32移動；及晶片翻轉手段34，使晶片1翻轉。 將晶片1以收容於晶圓環或承載盤之狀態下供給至上述晶片供給部31，該晶片1無論係進行面向上接合或是面向下接合，皆以主面朝上的狀態被供給。 上述晶片固持頭32構成為將供給至晶片供給部31的晶片1的頂面予以吸附固持，上述晶片固持頭移動手段33具備於X方向設於上述第1導引構件9上部之第3導引構件33a，並具有使上述晶片固持頭32沿著該第3導引構件33a於X方向移動且於Z方向升降之構成。 於上述第3導引構件33a的下方，設有上述晶片供給部31及晶片翻轉手段34，上述第3導引構件33a的圖示右側的端部，係重疊於上述第1導引構件9的圖示左側的端部而設置。The wafer supply means 7 includes: a wafer supply section 31 for supplying the wafer 1; a wafer holding head 32 for holding the wafer 1 in the wafer supply section 31; a wafer holding head moving means 33 for moving the wafer holding head 32; and a wafer turning means. 34. Turn the wafer 1 over. The wafer 1 is supplied to the above-mentioned wafer supply part 31 in a state of being accommodated in a wafer ring or a carrier. The wafer 1 is supplied with its main surface facing up regardless of whether it is face-up bonding or face-down bonding. The wafer holding head 32 is configured to adsorb and hold the top surface of the wafer 1 supplied to the wafer supply unit 31, and the wafer holding head moving means 33 includes a third guide provided in the X direction on the upper portion of the first guide member 9 member 33a, and has a structure in which the wafer holding head 32 is moved in the X direction and raised and lowered in the Z direction along the third guide member 33a. The wafer supply part 31 and the wafer turning means 34 are provided below the third guide member 33a. The end on the right side of the figure of the third guide member 33a overlaps the end of the first guide member 9. It is installed at the end on the left side as shown in the figure.

上述晶片翻轉手段34構成為：於進行面向下接合時，將上述晶片固持頭32所吸附固持的晶片1的底面予以吸附固持，更沿著設於Z方向的第4導引構件34a升降，且藉由未圖示旋轉機構旋轉180°。 而且，於上述第3導引構件33a與第1導引構件9重疊的部分，設定有：設有上述晶片翻轉手段34之第1晶片供給位置B1、及上述中繼台5及上述晶片固持頭32停止並遞送晶片1之第2晶片供給位置B2。 又，作為上述晶片翻轉手段34，亦可將吸附上述晶片1的吸附部設於對向的位置，於以一者的吸附部吸附固持晶片1的狀態下使旋轉機構作動，則吸附該晶片1的吸附部朝著下方，而另一者的吸附部朝上方，而可吸附新的晶片1。The wafer turning means 34 is configured to suction and hold the bottom surface of the wafer 1 held by the wafer holding head 32 during face-down bonding, and to move up and down along the fourth guide member 34a provided in the Z direction, and Rotates 180° by a rotating mechanism not shown. Furthermore, in the portion where the third guide member 33a overlaps the first guide member 9, the first wafer supply position B1 provided with the wafer flipping means 34, the relay station 5, and the wafer holding head are provided. 32 stops and delivers wafer 1 to the second wafer supply position B2. In addition, as the wafer turning means 34, the adsorption portions for adsorbing the wafer 1 can also be provided at opposite positions, and the wafer 1 can be adsorbed by operating the rotating mechanism while the wafer 1 is adsorbed and held by one of the adsorption portions. The adsorption part of one is facing downward, while the adsorption part of the other one is facing upward, so that the new wafer 1 can be adsorbed.

上述接合頭8係沿著上述第1導引構件9設置，並具有吸附固持上述晶片1的頂面並加熱所固持的晶片1之機構。 又，接合頭8具備於Z方向升降且使所固持的晶片1於水平面內(繞Z軸)旋轉之機構。換言之，接合頭未設有於水平方向移動之機構。 又，於與接合頭8相鄰的位置，設置對晶片1底面或基板2頂面供給接合輔助劑(熱硬化性樹脂等之黏接劑、助焊劑等之抗氧化劑)之未圖示的分注器。 再者，於接合頭8所設置的位置，設定上述接合台4及中繼台5停止之接合位置C，上述接合頭8從停止於該接合位置C之中繼台5取出上述晶片1，並將上述晶片1接合於停止於接合位置C之接合台4的基板2。 此時，為了將晶片1正確接合於基板2，必須修正接合頭8所固持的晶片1與載置於接合台4的基板2之位置偏移及傾斜偏移。 是故，於上述接合位置C，接合台移動手段10藉由使上述接合台4於X方向及Y方向移動，而使上述基板2移動以修正晶片1與基板2的位置。另一方面，上述接合頭8藉由使晶片1於水平面內旋轉，而修正晶片1與基板2的位置。 又，利用上述接合頭8使上述基板2與晶片1接合之技術本身為周知，故省略其詳細說明。The bonding head 8 is disposed along the first guide member 9 and has a mechanism for adsorbing and holding the top surface of the wafer 1 and heating the held wafer 1 . Furthermore, the bonding head 8 is provided with a mechanism that moves up and down in the Z direction and rotates the held wafer 1 in a horizontal plane (around the Z axis). In other words, the joint head is not provided with a mechanism for moving in the horizontal direction. In addition, a section (not shown) for supplying a bonding auxiliary agent (adhesive such as thermosetting resin, antioxidant such as flux) to the bottom surface of the wafer 1 or the top surface of the substrate 2 is provided adjacent to the bonding head 8. Injector. Furthermore, the bonding head 8 is set to a bonding position C where the bonding station 4 and the relay station 5 stop. The bonding head 8 takes out the wafer 1 from the relay station 5 stopped at the bonding position C, and The wafer 1 is bonded to the substrate 2 on the bonding stage 4 stopped at the bonding position C. At this time, in order to correctly bond the wafer 1 to the substrate 2 , it is necessary to correct the positional deviation and tilt deviation between the wafer 1 held by the bonding head 8 and the substrate 2 placed on the bonding table 4 . Therefore, in the bonding position C, the bonding stage moving means 10 moves the bonding stage 4 in the X direction and the Y direction to move the substrate 2 to correct the positions of the wafer 1 and the substrate 2 . On the other hand, the above-mentioned bonding head 8 corrects the position of the wafer 1 and the substrate 2 by rotating the wafer 1 in a horizontal plane. In addition, the technology of bonding the substrate 2 and the wafer 1 using the bonding head 8 is well known, and therefore its detailed description is omitted.

其次，如上所述，於利用接合頭8將晶片1接合於基板2時，修正晶片1與基板2的位置偏移及傾斜偏移，因此，必須事先辨識上述晶片1的位置和傾斜及基板2的位置和傾斜。 因此，本實施例的接合裝置3具備：基板拍攝手段41，拍攝上述接合台4上的基板2；晶片底面拍攝手段42，拍攝於進行面向下接合時固持於上述接合頭8的晶片1的底面；及晶片頂面拍攝手段43，拍攝於進行面向上接合時載置於上述中繼台5的晶片1的頂面。 上述控制手段12設有圖像辨識手段，該圖像辨識手段將此等拍攝手段41~43所拍攝的圖像加以圖像辨識，並辨識所拍攝的晶片1或基板2之位置或傾斜。 具體之圖像辨識方法因係為周知故省略詳細說明，於上述晶片1的主面或基板2的頂面事先設有對準標記，圖像處理手段根據此對準標記，能辨識晶片1的中心或基板2中之載置位置的中心、或能辨識該等的傾斜。又，為了辨識晶片1的位置或傾斜，並非一定要有對準標記，例如亦可藉由辨識形成於晶片1之既定形狀的組件或配線圖案，而辨識該晶片1的位置或傾斜。Secondly, as mentioned above, when the bonding head 8 is used to bond the wafer 1 to the substrate 2, the positional deviation and tilt deviation of the wafer 1 and the substrate 2 must be corrected. Therefore, the position and tilt of the wafer 1 and the substrate 2 must be identified in advance. position and tilt. Therefore, the bonding device 3 of this embodiment includes: substrate imaging means 41 for imaging the substrate 2 on the bonding stage 4; and wafer bottom surface imaging means 42 for imaging the bottom surface of the wafer 1 held by the bonding head 8 during face-down bonding. ; and the wafer top surface imaging means 43, which photographs the top surface of the wafer 1 placed on the relay station 5 during face-up bonding. The above-mentioned control means 12 is provided with an image recognition means that recognizes the images captured by the imaging means 41 to 43 and recognizes the position or inclination of the captured wafer 1 or substrate 2 . The detailed description of the specific image recognition method is omitted because it is well known. Alignment marks are provided in advance on the main surface of the above-mentioned wafer 1 or the top surface of the substrate 2. The image processing means can identify the wafer 1 based on the alignment marks. The center or the center of the placement position in the substrate 2 may be able to identify the inclination. In addition, in order to identify the position or tilt of the wafer 1 , it is not necessary to have an alignment mark. For example, the position or tilt of the wafer 1 can also be identified by identifying components or wiring patterns of a predetermined shape formed on the wafer 1 .

上述基板拍攝手段41，係位於上述接合頭8與基板供給手段6之間，上述接合台4停止於設定於該基板拍攝手段41下方之基板拍攝位置D，而能從上方拍攝載置於接合台4的基板2。 上述晶片頂面拍攝手段43，係位於上述接合頭8與晶片供給手段7之間，上述中繼台5停止於設定於該晶片頂面拍攝手段43下方之晶片頂面拍攝位置E，而能從上方拍攝載置於中繼台5且主面朝上方之晶片1。 另一方面，如圖2所示，上述晶片底面拍攝手段42係設於使上述接合台4移動之接合台移動手段10，且成為接合台4與晶片底面拍攝手段42一體移動之構成。 上述晶片底面拍攝手段42藉由利用上述接合台移動手段10之X滑動件10a於X方向移動，且利用Y滑動件10c於Y方向移動，而停止於設定於上述接合頭8下方的接合位置C，而能從下方拍攝由接合頭8所吸附之主面朝下方的晶片1。 又，若將上述晶片底面拍攝手段42設置成相對於上述接合台4排列於X方向，則於拍攝由接合頭8所吸附的晶片1時，則利用上述Y滑動件10c往Y方向的移動成為不必要。The above-mentioned substrate imaging means 41 is located between the above-mentioned bonding head 8 and the substrate supply means 6. The above-mentioned bonding stage 4 stops at the substrate imaging position D set below the substrate imaging means 41, and can photograph the substrate placed on the bonding stage from above. 4 substrate 2. The above-mentioned wafer top surface imaging means 43 is located between the above-mentioned bonding head 8 and the wafer supply means 7. The above-mentioned relay station 5 stops at the wafer top surface imaging position E set below the wafer top surface imaging means 43, and can be viewed from The above photo shows the chip 1 mounted on the relay station 5 with its main surface facing upward. On the other hand, as shown in FIG. 2 , the wafer bottom surface imaging means 42 is provided in the bonding stage moving means 10 that moves the bonding stage 4 , and the bonding stage 4 and the wafer bottom surface imaging means 42 move integrally. The wafer bottom surface imaging means 42 is moved in the X direction by the X slider 10a of the bonding stage moving means 10 and moved in the Y direction by the Y slider 10c, and stops at the bonding position C set below the bonding head 8. , and the wafer 1 with the main surface facing downwards adsorbed by the bonding head 8 can be photographed from below. Furthermore, if the wafer bottom surface imaging means 42 is arranged in the X direction with respect to the bonding table 4, when the wafer 1 adsorbed by the bonding head 8 is photographed, the movement of the Y slider 10c in the Y direction becomes unnecessary.

如此，本實施例的接合裝置3中，使用上述拍攝手段41~43以辨識晶片1或基板2之位置偏移或傾斜偏移。 然而，因接合裝置3的使用所造成之經時變化，而產生裝置整體中之機械性誤差或偏移，特別是於上述拍攝手段41~43中，有時會因安裝位置的偏移或歪斜等，而導致拍攝位置偏移。 如此之拍攝手段41~43的位置偏移，會影響上述圖像辨識手段所得的辨識結果，而造成無法正確接合，因此修正此等拍攝手段41~43的偏移之校準作業為必要。 本實施例中，能進行下述的校準作業：於進行面向下接合時所使用的基板拍攝手段41與晶片底面拍攝手段42之校準作業；及於進行面向上接合時所使用的基板拍攝手段41與晶片頂面拍攝手段43之校準作業。In this way, in the bonding device 3 of this embodiment, the above-mentioned imaging means 41 to 43 are used to identify the positional deviation or tilt deviation of the wafer 1 or the substrate 2 . However, due to changes over time caused by the use of the joint device 3, mechanical errors or deviations in the entire device may occur. In particular, in the above-mentioned photographing means 41 to 43, there may be deviations or distortions in the installation position. etc., causing the shooting position to shift. Such positional deviation of the photographing means 41 to 43 will affect the recognition results obtained by the above-mentioned image recognition means, resulting in incorrect jointing. Therefore, calibration work to correct the displacement of the photographing means 41 to 43 is necessary. In this embodiment, the following calibration operations can be performed: the calibration operation of the substrate imaging means 41 and the wafer bottom surface imaging means 42 used when performing face-down bonding; and the substrate imaging means 41 used when performing face-up bonding. Calibration operation with the wafer top surface photographing means 43.

為了進行上述校準作業，本實施例的接合裝置如圖2所示使用與上述接合台4相鄰設置之目標記號51。 上述目標記號51為板狀構件，該板狀構件在由透明素材所構成的本體上記載有能分別從表面及背面拍攝之十字型記號，並藉由上述接合台移動手段10，與上述接合台4和上述晶片底面拍攝手段42一體移動。 目標記號51設置成藉由設於上述接合台移動手段10的Y滑動件10c之移動機構52能進退移動，能移動至退避至上述晶片底面拍攝手段42的拍攝範圍外之退避位置(a)、及突出至上拍攝範圍內的突出位置(b)。 如此，目標記號51於進行接合時位於退避位置，於進行校準作業時位於突出位置。In order to perform the above-mentioned calibration operation, the bonding device of this embodiment uses a target mark 51 provided adjacent to the bonding stage 4 as shown in FIG. 2 . The target mark 51 is a plate-shaped member having a cross-shaped mark that can be photographed from the front and the back on a body made of a transparent material, and is moved with the bonding stage by the bonding stage moving means 10 4 and the above-mentioned wafer bottom surface photographing means 42 move integrally. The target mark 51 is movable forward and backward by the moving mechanism 52 of the Y slider 10c of the bonding stage moving means 10, and can be moved to a retracted position (a) outside the imaging range of the wafer bottom surface imaging means 42, and protruding to a protruding position within the upper shooting range (b). In this way, the target mark 51 is located at the retracted position when the joining is performed, and is located at the protruding position during the calibration operation.

利用如此構成，藉由使目標記號51位於突出位置，可藉由上述晶片底面拍攝手段42拍攝目標記號51，又，藉由上述接合台移動手段10使目標記號51停止於上述基板拍攝位置D及晶片頂面拍攝位置E，藉此，可藉由上述基板拍攝手段41及晶片頂面拍攝手段43拍攝目標記號51。 又，圖3係顯示藉由上述基板拍攝手段41、晶片底面拍攝手段42、晶片頂面拍攝手段43拍攝上述目標記號51的結果的示意圖。 具體而言，圖像辨識手段針對基板拍攝手段41，辨識目標記號51相對於拍攝中心41c的位置及傾斜，並將此辨識作為基板拍攝手段41的偏移量41g。 與此相同，圖像辨識手段亦可針對上述晶片底面拍攝手段42辨識拍攝中心42c的偏移量42g，又亦可針對晶片頂面拍攝手段43辨識拍攝中心43c的偏移量43g。With such a structure, by positioning the target mark 51 in the protruding position, the target mark 51 can be photographed by the wafer bottom surface photographing means 42, and the target mark 51 can be stopped at the substrate photographing position D and by the bonding stage moving means 10. The wafer top surface imaging position E allows the target mark 51 to be photographed by the substrate imaging means 41 and the wafer top surface imaging means 43 . In addition, FIG. 3 is a schematic diagram showing the result of imaging the target mark 51 by the substrate imaging means 41, the wafer bottom surface imaging means 42, and the wafer top surface imaging means 43. Specifically, the image recognition means recognizes the position and inclination of the target mark 51 relative to the imaging center 41 c with respect to the substrate imaging means 41 , and recognizes this as the offset amount 41 g of the substrate imaging means 41 . Similarly, the image recognition means can also identify the offset 42g of the imaging center 42c for the wafer bottom surface imaging means 42, and can also identify the offset 43g of the imaging center 43c for the wafer top surface imaging means 43.

如此，若各拍攝手段41~43的偏移量41g~43g被辨識，則可以如下方式進行校準作業。 首先，說明第1校準作業的順序。起初，面向下接合所使用的基板拍攝手段41及晶片底面拍攝手段42之校準量，可藉由將所辨識得之基板拍攝手段41的偏移量41g與晶片底面拍攝手段42的偏移量42g相加而計算。 接著，面向上接合所使用的基板拍攝手段41與晶片頂面拍攝手段43之校準量，可藉由將所辨識得之基板拍攝手段41的偏移量41g與晶片頂面拍攝手段43的偏移量43g相加而計算。In this way, if the offset amounts 41g to 43g of each of the imaging means 41 to 43 are identified, the calibration operation can be performed as follows. First, the procedure of the first calibration operation will be explained. Initially, the calibration amount of the substrate imaging means 41 and the wafer bottom surface imaging means 42 used for face-down bonding can be determined by comparing the identified offset 41g of the substrate imaging means 41 and the offset 42g of the wafer bottom surface imaging means 42 Calculate by adding. Next, the calibration amount of the substrate imaging means 41 and the wafer top surface imaging means 43 used for face-up bonding can be determined by comparing the identified offset 41g of the substrate imaging means 41 with the offset of the wafer top surface imaging means 43 Calculate by adding the amount 43g.

相對於此，第2校準作業的順序係使用以下方法。 首先，面向下接合所使用的基板拍攝手段41與晶片底面拍攝手段42之校準量，與上述第1方法相同，係將基板拍攝手段41的偏移量41g與晶片底面拍攝手段42的偏移量42g相加。 接著，為了進行面向上接合所使用的基板拍攝手段41與晶片頂面拍攝手段43之校準作業，首先，將晶片頂面拍攝手段43的偏移量43g與晶片底面拍攝手段42的偏移量42g相加。 之後，求得相加後的偏移量43g與偏移量42g的值、和由先前所算出的由偏移量41g與偏移量42g所成的面向下接合用的校準量之差，而此差值成為面向上接合用的校準量。On the other hand, the following method is used for the procedure of the second calibration operation. First, the calibration amount of the substrate imaging means 41 and the wafer bottom surface imaging means 42 used for face-down bonding is the same as the above-mentioned first method, which is the offset amount 41g of the substrate imaging means 41 and the offset amount of the wafer bottom surface imaging means 42 42g added up. Next, in order to calibrate the substrate imaging means 41 and the wafer top surface imaging means 43 used for face-up bonding, first, the offset amount 43g of the wafer top surface imaging means 43 and the offset amount 42g of the wafer bottom surface imaging means 42 are Add up. Thereafter, the difference between the added value of the offset amount 43g and the offset amount 42g and the previously calculated calibration amount for face-down bonding composed of the offset amount 41g and the offset amount 42g is obtained, and This difference becomes the calibration quantity for face-up bonding.

以下，使用圖4~圖8說明具有上述構成的接合裝置3的動作。其中，圖4~圖7顯示有關面向下接合的動作；圖8、圖9顯示有關面向上接合的動作。 圖4係顯示對上述接合台4供給基板2且對上述中繼台5供給主面朝下方狀態的晶片1之作業。 首先，接合台4藉由上述接合台移動手段10沿著第1導引構件9於X方向移動，並於上述基板供給位置A停止。 之後，於上述基板供給手段6中，基板固持頭23於上述基板儲存庫21的位置升降並固持儲存庫21內的基板，接著於上述基板供給位置A下降，而將基板2載置於接合台4上。Hereinafter, the operation of the joining device 3 having the above-mentioned structure will be described using FIGS. 4 to 8 . Among them, Figures 4 to 7 show actions related to face-down engagement; Figures 8 and 9 show actions related to face-up engagement. FIG. 4 shows the operation of supplying the substrate 2 to the bonding stage 4 and supplying the wafer 1 with the main surface facing downward to the relay stage 5 . First, the bonding stage 4 is moved in the X direction along the first guide member 9 by the bonding stage moving means 10 and stops at the substrate supply position A. Thereafter, in the above-mentioned substrate supply means 6, the substrate holding head 23 is raised and lowered at the position of the above-mentioned substrate storage 21 to hold the substrate in the storage 21, and then lowered at the above-mentioned substrate supply position A to place the substrate 2 on the bonding stage. 4 on.

另一方面，中繼台5藉由中繼台移動手段11沿著第1導引構件9於X方向移動，並於上述第1晶片供給位置B1停止。 之後，於上述晶片供給手段7中，晶片固持頭32於上述晶片供給部31的位置升降並固持主面朝上方的晶片1，接著往設於上述第1晶片供給位置B1的晶片翻轉手段34的上方移動，之後下降並將晶片1遞送至上述晶片翻轉手段34的吸附部。 接著，晶片翻轉手段34藉由旋轉機構使吸附部旋轉180°以使晶片1的主面朝下方，於此狀態下吸附部下降，而將晶片1載置於中繼台5上。On the other hand, the relay station 5 moves in the X direction along the first guide member 9 by the relay station moving means 11, and stops at the first wafer supply position B1. Thereafter, in the wafer supply means 7, the wafer holding head 32 moves up and down at the position of the wafer supply portion 31 to hold the wafer 1 with the main surface facing upward, and then moves to the wafer turning means 34 provided at the first wafer supply position B1. It moves upward, then descends and delivers the wafer 1 to the adsorption part of the above-mentioned wafer turning means 34 . Next, the wafer turning means 34 uses a rotating mechanism to rotate the suction portion 180° so that the main surface of the wafer 1 faces downward. In this state, the suction portion descends and the wafer 1 is placed on the relay stage 5 .

其次，圖5係顯示辨識接合台4上的基板2的位置且將中繼台5的晶片1遞送至上述接合頭8之作業。 首先，接合台4藉由上述接合台移動手段10沿著第1導引構件9於X方向移動，並於上述基板拍攝位置D停止。 之後，基板拍攝手段41拍攝接合台4上的基板2，而圖像辨識手段辨識接合台4中之基板2的位置及傾斜。Next, FIG. 5 shows the operation of identifying the position of the substrate 2 on the bonding station 4 and delivering the wafer 1 of the relay station 5 to the above-mentioned bonding head 8 . First, the bonding stage 4 is moved in the X direction along the first guide member 9 by the bonding stage moving means 10 and stops at the substrate imaging position D. Thereafter, the substrate photographing means 41 photographs the substrate 2 on the bonding stage 4, and the image recognition means identifies the position and inclination of the substrate 2 on the bonding stage 4.

另一方面，中繼台5藉由中繼台移動手段11沿著第1導引構件9於X方向移動，並於上述接合位置C停止。 之後，接合頭8於Z方向升降，而吸附固持中繼台5上的晶片1。On the other hand, the relay station 5 moves in the X direction along the first guide member 9 by the relay station moving means 11, and stops at the above-mentioned engagement position C. After that, the bonding head 8 moves up and down in the Z direction to adsorb and hold the wafer 1 on the relay stage 5 .

其次，圖6係顯示辨識固持於接合頭8的晶片1的位置且使中繼台5往晶片供給手段7移動之作業。 首先，與接合台4一體設置之晶片底面拍攝手段42，藉由上述接合台移動手段10沿著第1導引構件9於X方向移動，並停止於上述接合位置C。 之後，上述晶片底面拍攝手段42從吸附於接合頭8的晶片1的下方拍攝，圖像辨識手段辨識吸附於接合頭8的晶片1的位置及傾斜。Next, FIG. 6 shows the operation of identifying the position of the wafer 1 held by the bonding head 8 and moving the relay station 5 to the wafer supply means 7 . First, the wafer bottom surface imaging means 42 integrated with the bonding stage 4 is moved in the X direction along the first guide member 9 by the bonding stage moving means 10 and stops at the bonding position C. Thereafter, the wafer bottom surface imaging means 42 takes an image from below the wafer 1 adsorbed on the bonding head 8 , and the image recognition means recognizes the position and inclination of the wafer 1 adsorbed on the bonding head 8 .

另一方面，中繼台5藉由中繼台移動手段11沿著第1導引構件9於X方向移動，並停止於上述第1晶片供給位置B1。 於晶片供給手段7中，上述晶片固持頭32於上述晶片供給部31將主面朝上方的晶片1吸附固持，並使該晶片1移動至位於上述第1晶片供給位置B1的晶片翻轉手段34的上方。On the other hand, the relay station 5 moves in the X direction along the first guide member 9 by the relay station moving means 11, and stops at the first wafer supply position B1. In the wafer supply means 7, the wafer holding head 32 adsorbs and holds the wafer 1 with the main surface facing upward in the wafer supply section 31, and moves the wafer 1 to the wafer turning means 34 located at the first wafer supply position B1. above.

又，圖7係顯示接合頭8將晶片1接合於基板2且晶片供給手段7將晶片1供給至中繼台5之作業。 首先，上述接合台4藉由接合台移動手段10沿著第1導引構件9於X方向移動，而停止於上述接合位置C。 另一方面，圖像辨識手段根據上述基板拍攝手段41所拍攝的基板2的位置及傾斜、及上述晶片底面拍攝手段42所拍攝的晶片1的位置及傾斜，計算載置於接合台4的基板2與固持於接合頭8的晶片1間的位置偏移量及傾斜偏移量。 之後，控制手段12控制上述接合台移動手段10，使接合台4於X方向及Y方向移動，以使上述基板2與晶片1的位置偏移消除。此時，於已進行上述校準作業的情形時，亦加入校準量並使移動。 再者，控制手段12控制上述接合頭8的旋轉機構，使接合頭8於水平面內旋轉，以使上述基板2與晶片1的傾斜偏移消除。此時，於已進行上述校準作業的情形時，亦可加入校準量並使旋轉。 於此狀態下，上述接合頭8於Z方向下降，當主面朝下方的晶片1抵接於基板2的頂面，則藉由接合頭8及接合台4使已加熱的晶片1與基板2接合。 另一方面，於晶片供給手段7中，上述晶片固持頭32下降，以將晶片1遞送至晶片翻轉手段34中之朝向上方的吸附部。Moreover, FIG. 7 shows the operation in which the bonding head 8 bonds the wafer 1 to the substrate 2 and the wafer supply means 7 supplies the wafer 1 to the relay station 5 . First, the bonding stage 4 is moved in the X direction along the first guide member 9 by the bonding stage moving means 10 and stops at the bonding position C. On the other hand, the image recognition means calculates the substrate placed on the bonding table 4 based on the position and inclination of the substrate 2 photographed by the substrate imaging means 41 and the position and inclination of the wafer 1 photographed by the wafer bottom surface imaging means 42 2 and the positional offset and tilt offset between the wafer 1 held on the bonding head 8 . Thereafter, the control means 12 controls the bonding stage moving means 10 to move the bonding stage 4 in the X direction and the Y direction, so that the positional deviation between the substrate 2 and the wafer 1 is eliminated. At this time, when the above-mentioned calibration operation has been performed, the calibration amount is also added and moved. Furthermore, the control means 12 controls the rotation mechanism of the bonding head 8 to rotate the bonding head 8 in a horizontal plane so as to eliminate the tilt offset between the substrate 2 and the wafer 1 . At this time, when the above-mentioned calibration operation has been performed, the calibration amount can also be added and rotated. In this state, the above-mentioned bonding head 8 descends in the Z direction. When the wafer 1 with its main surface facing downwards contacts the top surface of the substrate 2, the heated wafer 1 and the substrate 2 are heated by the bonding head 8 and the bonding stage 4. Engagement. On the other hand, in the wafer supply means 7 , the wafer holding head 32 is lowered to deliver the wafer 1 to the upward-facing suction portion of the wafer turning means 34 .

其後，當已完成接合的接合頭8退避至接合台4的上方，則接合台4藉由接合台移動手段10往基板供給位置A移動。 如此之後，基板供給手段6的基板固持頭23從接合台4將已接合有晶片1的基板2予以固持後，將該基板2收容於上述產品儲存庫22。 其後，基板供給手段6藉由基板固持頭23將新的基板2從上述基板儲存庫21取出，並將該新的基板2供給至接合台4上。Thereafter, when the bonding head 8 that has completed bonding is retracted above the bonding table 4, the bonding table 4 moves to the substrate supply position A by the bonding table moving means 10. After this, the substrate holding head 23 of the substrate supply means 6 holds the substrate 2 to which the wafer 1 has been bonded from the bonding stage 4, and then stores the substrate 2 in the product storage 22. Thereafter, the substrate supply means 6 takes out the new substrate 2 from the substrate storage 21 via the substrate holding head 23 and supplies the new substrate 2 to the bonding stage 4 .

其次，使用圖8、圖9，說明進行面向上接合時的動作。又，對於與上述面向下接合共通的作業，省略其說明。 圖8係顯示與圖4所說明的作業相對應的作業，該作業係對接合台4上供給基板2且對中繼台5供給晶片1。 針對對接合台4供給基板2的作業，與進行面向下接合時相同，藉由基板供給手段6將基板2載置於接合台4上。 另一方面，於對中繼台5供給晶片1的作業中，上述中繼台移動手段11使中繼台5停止於第2晶片供給位置B2。 接著，於晶片供給手段7中，晶片固持頭32將從晶片供給部31所取出的晶片1直接載置於中繼台5，藉此，於主面朝上方的狀態下，將晶片1載置於中繼台5上。Next, the operation when performing face-up joining will be described using FIGS. 8 and 9 . In addition, description of operations common to the above-mentioned face-down bonding will be omitted. FIG. 8 shows an operation corresponding to the operation described in FIG. 4 , in which the substrate 2 is supplied to the bonding stage 4 and the wafer 1 is supplied to the relay stage 5 . The operation of supplying the substrate 2 to the bonding stage 4 is the same as when performing face-down bonding. The substrate 2 is placed on the bonding stage 4 by the substrate supply means 6 . On the other hand, during the operation of supplying the wafer 1 to the relay station 5, the relay station moving means 11 stops the relay station 5 at the second wafer supply position B2. Next, in the wafer supply means 7, the wafer holding head 32 directly places the wafer 1 taken out from the wafer supply part 31 on the relay stage 5, thereby placing the wafer 1 with the main surface facing upward. on repeater 5.

圖9係顯示與圖5所說明的作業相對應的作業，該作業係辨識接合台4上的基板2的位置且辨識中繼台5上的晶片1的位置。 辨識接合台4的基板2的位置的作業，與進行面向下接合時相同，使上述接合台4移動至基板拍攝位置D，藉由上述基板拍攝手段41拍攝接合台4上的基板2。 另一方面，於辨識中繼台5的晶片1的位置的作業中，首先，上述中繼台移動手段11使中繼台5移動至晶片頂面拍攝位置E。 之後，上述晶片頂面拍攝手段43能拍攝中繼台5上的晶片1。FIG. 9 shows an operation corresponding to the operation described in FIG. 5 , which is to identify the position of the substrate 2 on the bonding stage 4 and to identify the position of the wafer 1 on the relay stage 5 . The operation of identifying the position of the substrate 2 on the bonding stage 4 is the same as when performing face-down bonding. The bonding stage 4 is moved to the substrate imaging position D, and the substrate 2 on the bonding stage 4 is photographed by the substrate imaging means 41 . On the other hand, in the operation of identifying the position of the wafer 1 on the relay station 5, first, the relay station moving means 11 moves the relay station 5 to the wafer top surface imaging position E. After that, the wafer top surface imaging means 43 can photograph the wafer 1 on the relay station 5 .

其後的作業，除了利用晶片底面拍攝手段42之拍攝外，與面向下接合相同，進行如圖5所示之使中繼台5位於接合位置C並藉由接合頭8吸附晶片1之作業、及如圖7所示之一邊修正基板2與晶片1的位置偏移及傾斜偏移一邊將晶片1接合於基板2之作業。 藉此，使主面朝上方的晶片1接合於基板2。The subsequent operation is the same as the face-down bonding except that the wafer bottom surface imaging means 42 is used to photograph. As shown in FIG. 5 , the relay stage 5 is positioned at the bonding position C and the wafer 1 is sucked by the bonding head 8. As shown in FIG. 7 , the wafer 1 is bonded to the substrate 2 while correcting the positional deviation and tilt deviation between the substrate 2 and the wafer 1 . Thereby, the wafer 1 with its main surface facing upward is bonded to the substrate 2 .

如此，依據本實施例的接合裝置3，載置有上述基板2之接合台4及載置有晶片1之中繼台5，沿著上述第1導引構件9於X方向移動。 此外，以沿著上述第1導引構件9於X方向排列的方式，設置供給基板2之基板供給手段6、供給晶片1之晶片供給手段7及接合頭8。 亦即，因接合台4與中繼台5沿著一個第1導引構件9於X方向相對移動，故往相對的Y方向的移動變少，且與使接合台4與中繼台5沿著不同導引構件移動的情形相比，為不易產生往Y方向之機械性誤差的構造。 如此，本實施例的接合裝置3可謂具有能儘可能地減少移動手段所導致的移動誤差或機械性誤差的構成。 又，本實施例中，接合台4及中繼台5能藉由接合台移動手段10及中繼台移動手段11個別移動，於上述接合動作中，能對接合台4及中繼台5個別進行作業。 相對於此，如專利文獻1之將接合台與中繼台設為一體的情形時，於如本實施例之基板供給手段6與晶片供給手段7隔離的情形時，必須將一體化的接合台與中繼台頻繁移動，將使得接合作業變得沒有效率。 如此，本實施例的接合裝置3可謂具有能進行有效率動作的構成，特別是，本實施例的接合裝置3因能兼用於面向下接合及面向上接合，故可謂具有更有效率的構成。In this way, according to the bonding device 3 of this embodiment, the bonding stage 4 on which the substrate 2 is placed and the relay stage 5 on which the wafer 1 is placed move in the X direction along the first guide member 9 . Furthermore, a substrate supply means 6 for supplying the substrate 2 , a wafer supply means 7 for supplying the wafer 1 , and a bonding head 8 are provided so as to be arranged in the X direction along the first guide member 9 . That is, since the splice station 4 and the relay station 5 move relatively in the X direction along the first guide member 9, the relative movement in the Y direction becomes less, and the splice station 4 and the relay station 5 move along the same direction. Compared with the movement of different guide members, it is a structure that is less likely to produce mechanical errors in the Y direction. In this way, the joining device 3 of this embodiment can be said to have a structure that can reduce movement errors or mechanical errors caused by the movement means as much as possible. Furthermore, in this embodiment, the splicing station 4 and the relay station 5 can be moved individually by the splicing station moving means 10 and the relay station moving means 11. In the above-mentioned splicing operation, the splicing station 4 and the relay station 5 can be moved individually. Do your homework. On the other hand, when the bonding stage and the relay stage are integrated as in Patent Document 1, and when the substrate supply means 6 and the wafer supply means 7 are isolated as in this embodiment, the integrated bonding stage must be Frequent movement with repeaters will make the splicing operation inefficient. In this way, the joining device 3 of this embodiment can be said to have a structure that can operate efficiently. In particular, the joining device 3 of this embodiment can be used for both face-down joining and face-up joining, so it can be said to have a more efficient structure.

其次，使用圖10、圖11，說明基板拍攝手段41、晶片底面拍攝手段42及晶片頂面拍攝手段43於校準作業時的動作。 圖10係用於面向下接合之基板拍攝手段41及晶片底面拍攝手段42的校準作業的示意圖。 在此，為了進行校準作業，如圖2所示，上述目標記號51從退避狀態移動至突出狀態，目標記號51位於上述晶片底面拍攝手段42的上方。 於此狀態下，接合台移動手段10與接合台4及晶片底面拍攝手段42共同，使上述目標記號51往基板拍攝位置D移動。 之後，上述基板拍攝手段41從上方拍攝目標記號51，且晶片底面拍攝手段42從下方拍攝目標記號51。 圖像辨識手段，根據如上所述之基板拍攝手段41所拍攝的目標記號51的圖像及晶片底面拍攝手段42所拍攝的目標記號51的圖像，計算基板拍攝手段41與晶片底面拍攝手段42間的位置偏移量或傾斜偏移量，並記錄之。 又，針對晶片底面拍攝手段42，不必一定要於基板拍攝位置D進行目標記號51的拍攝，亦可進行於任意位置的拍攝。Next, the operations of the substrate imaging means 41, the wafer bottom surface imaging means 42, and the wafer top surface imaging means 43 during the calibration operation will be described using FIGS. 10 and 11 . FIG. 10 is a schematic diagram of the calibration operation of the substrate imaging means 41 and the wafer bottom surface imaging means 42 for face-down bonding. Here, in order to perform the calibration operation, as shown in FIG. 2 , the target mark 51 is moved from the retracted state to the protruding state, and the target mark 51 is located above the wafer bottom surface imaging means 42 . In this state, the bonding stage moving means 10 cooperates with the bonding stage 4 and the wafer bottom surface imaging means 42 to move the target mark 51 to the substrate imaging position D. Thereafter, the substrate imaging means 41 photographs the target mark 51 from above, and the wafer bottom surface imaging means 42 photographs the target mark 51 from below. The image recognition means calculates the substrate photographing means 41 and the wafer bottom surface photographing means 42 based on the image of the target mark 51 photographed by the substrate photographing means 41 and the image of the target mark 51 photographed by the wafer bottom surface photographing means 42. position offset or tilt offset between the two, and record it. In addition, the wafer bottom surface imaging means 42 does not necessarily have to photograph the target mark 51 at the substrate imaging position D, but can also photograph the target mark 51 at any position.

其次，圖11係用於上述面向上接合之基板拍攝手段41及晶片頂面拍攝手段43的校準作業的示意圖。 首先，如圖10所示，接合台移動手段10與接合台4共同使上述目標記號51往基板拍攝位置D移動，上述基板拍攝手段41從上方拍攝目標記號51。 其後，如圖11所示，接合台移動手段10使目標記號51往晶片頂面拍攝位置E移動，上述晶片頂面拍攝手段43從上方拍攝目標記號51。 圖像辨識手段，根據如上所述之基板拍攝手段41所拍攝的目標記號51的圖像及晶片頂面拍攝手段43所拍攝的目標記號51的圖像，計算基板拍攝手段41與晶片頂面拍攝手段43間的位置偏移量或傾斜偏移量，並記錄之。Next, FIG. 11 is a schematic diagram of the calibration operation of the substrate imaging means 41 and the wafer top surface imaging means 43 for the above-mentioned surface-up bonding. First, as shown in FIG. 10 , the bonding stage moving means 10 and the bonding stage 4 jointly move the target mark 51 to the substrate imaging position D, and the substrate imaging means 41 photographs the target mark 51 from above. Thereafter, as shown in FIG. 11 , the bonding stage moving means 10 moves the target mark 51 to the wafer top surface imaging position E, and the wafer top surface imaging means 43 photographs the target mark 51 from above. The image recognition means calculates the difference between the substrate imaging means 41 and the wafer top surface imaging based on the image of the target mark 51 photographed by the substrate imaging means 41 and the image of the target mark 51 photographed by the wafer top surface imaging means 43. Position offset or tilt offset between means 43 and record it.

如此，依據本實施例，於能兼用於面向下接合及面向上接合的接合裝置3中，能進行用於此等接合之拍攝手段41~43的校準作業。 又，於此情形時中，因上述接合台4沿著第1導引構件9於X方向移動，故能儘可能地抑制往Y方向的機械性誤差。In this way, according to this embodiment, in the joining device 3 that can be used for both face-down joining and face-up joining, the calibration operation of the imaging means 41 to 43 used for these joinings can be performed. In addition, in this case, since the above-mentioned joining table 4 moves in the X direction along the first guide member 9, the mechanical error in the Y direction can be suppressed as much as possible.

又，於上述實施例中，係為使上述晶片底面拍攝手段42及目標記號51與上述接合台4一體移動之構成，但亦可為藉由上述中繼台移動手段11使此等與中繼台5一體移動之構成。再者，亦可為使晶片底面拍攝手段42及目標記號51能各自沿著上述第1導引構件9個別移動之構成。 又，上述實施例中之基板供給手段6及晶片供給手段7，於圖1中，使上述基板固持頭23及晶片固持頭32與第1導引構件9同樣地於X方向移動，以供給基板2及晶片1，但亦可使此等固持頭23、32往Y方向移動，此等之配置能有各種變更。Furthermore, in the above embodiment, the wafer bottom surface imaging means 42 and the target mark 51 are moved integrally with the bonding stage 4, but they may also be relayed through the relay stage moving means 11. The platform 5 moves in one piece. Furthermore, the wafer bottom surface imaging means 42 and the target mark 51 may be configured to move individually along the first guide member 9 . In addition, the substrate supply means 6 and the wafer supply means 7 in the above embodiment move the substrate holding head 23 and the wafer holding head 32 in the X direction similarly to the first guide member 9 in FIG. 1 to supply the substrate. 2 and the wafer 1, but the holding heads 23 and 32 can also be moved in the Y direction, and the configuration can be variously changed.

1:晶片 2:基板 3:接合裝置 4:接合台 5:中繼台 6:基板供給手段 7:晶片供給手段 8:接合頭 9:第1導引構件 10:接合台移動手段 10a:X滑動件 10b:Y方向導引構件 10c:Y滑動件 11:中繼台移動手段 11a:X滑動件 11b:Y方向導引構件 11c:Y滑動件 12:控制手段 21:基板儲存庫 22:產品儲存庫 23:基板固持頭 24:基板固持頭移動手段 24a:第2導引構件 31:晶片供給部 32:晶片固持頭 33:晶片固持頭移動手段 33a:第3導引構件 34:晶片翻轉手段 34a:第4導引構件 41:基板拍攝手段 41c:拍攝中心 41g:偏移量 42:晶片底面拍攝手段 42c:拍攝中心 42g:偏移量 43:晶片頂面拍攝手段 43c:拍攝中心 43g:偏移量 51:目標記號 52:移動機構 A:基板供給位置 B1:第1晶片供給位置 B2:第2晶片供給位置 C:接合位置 D:基板拍攝位置 E:晶片頂面拍攝位置1:wafer 2:Substrate 3:Joining device 4:Jointing table 5: Repeater 6:Substrate supply means 7: Chip supply means 8:joint head 9: 1st guide member 10:Jointing table movement means 10a:X slider 10b:Y direction guide member 10c:Y slider 11: Relay station movement means 11a:X slider 11b: Y direction guide member 11c:Y slider 12:Means of control 21:Substrate repository 22:Product repository 23:Substrate holding head 24:Means for moving the substrate holding head 24a: 2nd guide member 31: Chip supply department 32: Wafer holding head 33: Wafer holding head movement means 33a: 3rd guide member 34: Chip flipping method 34a: 4th guide member 41:Substrate photography method 41c:Photography Center 41g:offset 42: Method of photographing the bottom of the chip 42c:Photography center 42g:offset 43: Method of photographing the top surface of the chip 43c:Photography center 43g:offset 51:Target mark 52:Mobile mechanism A:Substrate supply position B1: 1st wafer supply position B2: 2nd wafer supply position C:joint position D:Substrate shooting position E: Shooting position on top of wafer

[圖1]本實施例之接合裝置的構成圖。 [圖2(a)~(b)]接合台的俯視圖及目標記號的動作說明圖。 [圖3]目標記號的拍攝圖像的例。 [圖4]進行面向下接合時的動作說明圖。 [圖5]進行面向下接合時的動作說明圖。 [圖6]進行面向下接合時的動作說明圖。 [圖7]進行面向下接合時的動作說明圖。 [圖8]進行面向上接合時的動作說明圖。 [圖9]進行面向上接合時的動作說明圖。 [圖10]進行校準作業時的動作說明圖。 [圖11]進行校準作業時的動作說明圖。[Fig. 1] A structural diagram of the joining device of this embodiment. [Fig. 2(a)~(b)] A top view of the joint stage and an illustration of the operation of the target mark. [Fig. 3] An example of a captured image of a target mark. [Fig. 4] An explanatory diagram of the operation when performing face-down joining. [Fig. 5] An explanatory diagram of the operation when performing face-down joining. [Fig. 6] An explanatory diagram of the operation when performing face-down joining. [Fig. 7] An explanatory diagram of the operation when performing face-down joining. [Fig. 8] An explanatory diagram of the operation when performing face-up joining. [Fig. 9] An explanatory diagram of the operation when performing face-up joining. [Fig. 10] An explanatory diagram of the operation during calibration work. [Fig. 11] An explanatory diagram of the operation during calibration work.

1:晶片 1:wafer

2:基板 2:Substrate

3:接合裝置 3:Joining device

4:接合台 4:Jointing table

5:中繼台 5: Repeater

6:基板供給手段 6:Substrate supply means

7:晶片供給手段 7: Chip supply means

8:接合頭 8:joint head

9:第1導引構件 9: 1st guide member

10:接合台移動手段 10:Jointing table movement means

10a:X滑動件 10a:X slider

10b:Y方向導引構件 10b:Y direction guide member

10c:Y滑動件 10c:Y slider

11:中繼台移動手段 11: Relay station movement means

11a:X滑動件 11a:X slider

11b:Y方向導引構件 11b: Y direction guide member

11c:Y滑動件 11c:Y slider

12:控制手段 12:Means of control

21:基板儲存庫 21:Substrate repository

22:產品儲存庫 22:Product repository

23:基板固持頭 23:Substrate holding head

24:基板固持頭移動手段 24:Means for moving the substrate holding head

24a:第2導引構件 24a: 2nd guide member

31:晶片供給部 31: Chip supply department

32:晶片固持頭 32: Wafer holding head

33:晶片固持頭移動手段 33: Wafer holding head movement means

33a:第3導引構件 33a: 3rd guide member

34:晶片翻轉手段 34: Chip flipping method

34a:第4導引構件 34a: 4th guide member

41:基板拍攝手段 41:Substrate photography method

42:晶片底面拍攝手段 42: Method of photographing the bottom of the chip

43:晶片頂面拍攝手段 43: Method of photographing the top surface of the chip

51:目標記號 51:Target mark

A:基板供給位置 A:Substrate supply position

B1:第1晶片供給位置 B1: 1st wafer supply position

B2:第2晶片供給位置 B2: 2nd wafer supply position

C:接合位置 C:joint position

D:基板拍攝位置 D:Substrate shooting position

E:晶片頂面拍攝位置 E: Shooting position on top of wafer

Claims (4)

一種接合裝置，包含：接合台，載置有基板；接合台移動手段，使該接合台移動；中繼台，載置有晶片；中繼台移動手段，使該中繼台移動；基板供給手段，對該接合台供給該基板；晶片供給手段，對該中繼台供給該晶片；及接合頭，從該中繼台取出該晶片並將該晶片接合於該接合台上的該基板；該接合頭對於水平方向係固定；設置朝著水平的第1方向所設且由一對軌條所構成之導引構件，並沿著該導引構件配置該基板供給手段、該晶片供給手段及該接合頭；該接合台移動手段及該中繼台移動手段，各自具有能個別移動地卡合於該導引構件的滑動件，且於該接合台移動手段的滑動件設置該接合台，並於該中繼台移動手段的滑動件設置該中繼台，藉以使該接合台及該中繼台沿著該導引構件個別移動。 A bonding device includes: a bonding stage on which a substrate is placed; a bonding stage moving means for moving the bonding stage; a relay stage on which a wafer is placed; a relay stage moving means for moving the relay stage; and a substrate supply means , supplying the substrate to the bonding station; wafer supply means, supplying the wafer to the relay station; and a bonding head, taking out the wafer from the relay station and bonding the wafer to the substrate on the bonding station; the bonding head The head is fixed to the horizontal direction; a guide member composed of a pair of rails is provided toward the first horizontal direction, and the substrate supply means, the wafer supply means and the bonding means are arranged along the guide member head; the joining stage moving means and the relay stage moving means each have a sliding member that can be individually moved and engaged with the guide member, and the joining stage is provided on the sliding member of the joining stage moving means, and the joining stage is mounted on the sliding member of the joining stage moving means. The sliding member of the relay station moving means is arranged on the relay station, so that the joining station and the relay station move individually along the guide member. 如請求項1之接合裝置，其中，該接合頭具有能進行下述接合的構成：面向下接合，於該晶片的主面朝下方的狀態下固持該晶片，將該主面接合於該基板；及面向上接合，於該晶片的主面朝上方的狀態下固持該晶片，並於維持該主面朝上方的狀況下將該晶片接合於該基板， 沿著該導引構件設置：基板拍攝手段，從上方拍攝載置於該接合台的該基板；及晶片頂面拍攝手段，於進行面向上接合時，從上方拍攝載置於該中繼台的該晶片的主面，更沿著該導引構件以可移動方式設置：晶片底面拍攝手段，於進行面向下接合時，從下方拍攝固持於該接合頭的該晶片的主面。 The bonding device of claim 1, wherein the bonding head has a structure capable of performing the following bonding: face-down bonding, holding the wafer with the main surface of the wafer facing downward, and bonding the main surface to the substrate; and surface-up bonding, holding the wafer with the main surface facing upward, and bonding the wafer to the substrate while maintaining the main surface facing upward, Provided along the guide member: a substrate photographing means for photographing the substrate placed on the bonding stage from above; and a wafer top surface photographing means for photographing the substrate placed on the relay stage from above during face-up bonding. The main surface of the wafer is movably disposed along the guide member: a wafer bottom surface photographing means is used to photograph the main surface of the wafer held on the bonding head from below during face-down bonding. 如請求項2之接合裝置，其中，更包含用以進行該基板拍攝手段、該晶片頂面拍攝手段及該晶片底面拍攝手段的校準作業之目標記號，並將該目標記號以可沿著該導引構件移動的方式設置；於為了進行該面向下接合而進行該基板拍攝手段及該晶片底面拍攝手段的校準作業時，使該目標記號位於該晶片底面拍攝手段的上方及該基板拍攝手段的下方，並藉由該晶片底面拍攝手段及該基板拍攝手段拍攝該目標記號；於為了進行該面向上接合而進行該基板拍攝手段及該晶片頂面拍攝手段的校準作業時，使該目標記號位於該晶片頂面拍攝手段的下方及該基板拍攝手段的下方，並藉由該晶片頂面拍攝手段及該基板拍攝手段拍攝該目標記號。 The bonding device of claim 2, further comprising a target mark for calibrating the substrate imaging means, the wafer top surface imaging means and the wafer bottom surface imaging means, and the target mark is arranged to be able to move along the guide. The guide member is arranged to move; when calibrating the substrate imaging means and the wafer bottom surface imaging means for performing the surface-down bonding, the target mark is positioned above the wafer bottom surface imaging means and below the substrate imaging means , and photograph the target mark by the wafer bottom surface photographing means and the substrate photographing means; when performing the calibration operation of the substrate photographing means and the wafer top surface photographing means for the surface-up bonding, the target mark is positioned at the Below the wafer top surface photographing means and below the substrate photographing means, the target mark is photographed by the wafer top surface photographing means and the substrate photographing means. 如請求項3之接合裝置，其中，設置該晶片底面拍攝手段及該目標記號，使可藉由該接合台移動手段而與該接合台一體移動，該目標記號更具備移動機構，該移動機構使該目標記號移動到突出至該晶片底面拍攝手段所進行的拍攝範圍內之突出位置和從該拍攝範圍退避之退避位置。 The bonding device of claim 3, wherein the wafer bottom surface photographing means and the target mark are provided so that they can be moved integrally with the bonding stage by the bonding stage moving means, and the target mark further has a moving mechanism, and the moving mechanism allows The target mark moves to a protruding position within the imaging range of the wafer bottom surface imaging means and a retracted position away from the imaging range.
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