TWI803189B - 肖特基能障二極體 - Google Patents

肖特基能障二極體 Download PDF

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Publication number
TWI803189B
TWI803189B TW111105174A TW111105174A TWI803189B TW I803189 B TWI803189 B TW I803189B TW 111105174 A TW111105174 A TW 111105174A TW 111105174 A TW111105174 A TW 111105174A TW I803189 B TWI803189 B TW I803189B
Authority
TW
Taiwan
Prior art keywords
outer peripheral
barrier diode
schottky barrier
insulating film
trench
Prior art date
Application number
TW111105174A
Other languages
English (en)
Chinese (zh)
Other versions
TW202239009A (zh
Inventor
有馬潤
藤田実
川崎克己
平林潤
Original Assignee
日商Ｔｄｋ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｔｄｋ股份有限公司 filed Critical 日商Ｔｄｋ股份有限公司
Publication of TW202239009A publication Critical patent/TW202239009A/zh
Application granted granted Critical
Publication of TWI803189B publication Critical patent/TWI803189B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

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  • Electrodes Of Semiconductors (AREA)
TW111105174A 2021-02-25 2022-02-14 肖特基能障二極體 TWI803189B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021028799A JP7669159B2 (ja) 2021-02-25 2021-02-25 ショットキーバリアダイオード
JP2021-028799 2021-02-25

Publications (2)

Publication Number Publication Date
TW202239009A TW202239009A (zh) 2022-10-01
TWI803189B true TWI803189B (zh) 2023-05-21

Family

ID=83049239

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111105174A TWI803189B (zh) 2021-02-25 2022-02-14 肖特基能障二極體

Country Status (6)

Country Link
US (1) US12520510B2 (https=)
EP (1) EP4300586A4 (https=)
JP (1) JP7669159B2 (https=)
CN (1) CN116888743A (https=)
TW (1) TWI803189B (https=)
WO (1) WO2022181203A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI905790B (zh) * 2023-09-21 2025-11-21 日商Ｔｄｋ股份有限公司 半導體裝置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010000033A1 (en) * 1999-05-28 2001-03-15 Baliga Bantval Jayant Methods of forming power semiconductor devices having tapered trench-based insulating regions therein
TW201314918A (zh) * 2011-09-22 2013-04-01 Alpha & Omega Semiconductor 帶有整合肖特基能障二極體的溝槽mosfet器件
US20170301792A1 (en) * 2016-04-15 2017-10-19 Infineon Technologies Ag Semiconductor Devices and a Method for Forming a Semiconductor Device
TW201942976A (zh) * 2018-03-30 2019-11-01 日商Ｔｄｋ股份有限公司 肖特基能障二極體
WO2020039971A1 (ja) * 2018-08-22 2020-02-27 三菱電機株式会社 酸化物半導体装置及びその製造方法
EP3703137A1 (en) * 2017-10-26 2020-09-02 TDK Corporation Schottky barrier diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6296445B2 (ja) 2014-02-10 2018-03-20 ローム株式会社 ショットキーバリアダイオード
JP6845397B2 (ja) 2016-04-28 2021-03-17 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP6932997B2 (ja) * 2017-05-25 2021-09-08 富士電機株式会社 半導体装置及びその製造方法
JP6626929B1 (ja) * 2018-06-29 2019-12-25 京セラ株式会社 半導体デバイス及び電気装置
US20210036166A1 (en) * 2019-08-01 2021-02-04 AZ Power, Inc MERGED PiN SCHOTTKY (MPS) DIODE WITH MULTIPLE CELL DESIGN AND MANUFACTURING METHOD THEREOF

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010000033A1 (en) * 1999-05-28 2001-03-15 Baliga Bantval Jayant Methods of forming power semiconductor devices having tapered trench-based insulating regions therein
TW201314918A (zh) * 2011-09-22 2013-04-01 Alpha & Omega Semiconductor 帶有整合肖特基能障二極體的溝槽mosfet器件
US20170301792A1 (en) * 2016-04-15 2017-10-19 Infineon Technologies Ag Semiconductor Devices and a Method for Forming a Semiconductor Device
EP3703137A1 (en) * 2017-10-26 2020-09-02 TDK Corporation Schottky barrier diode
TW201942976A (zh) * 2018-03-30 2019-11-01 日商Ｔｄｋ股份有限公司 肖特基能障二極體
WO2020039971A1 (ja) * 2018-08-22 2020-02-27 三菱電機株式会社 酸化物半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2022181203A1 (ja) 2022-09-01
US20240055536A1 (en) 2024-02-15
JP7669159B2 (ja) 2025-04-28
EP4300586A1 (en) 2024-01-03
TW202239009A (zh) 2022-10-01
JP2022129918A (ja) 2022-09-06
US12520510B2 (en) 2026-01-06
CN116888743A (zh) 2023-10-13
EP4300586A4 (en) 2025-01-15

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