TWI800940B - 高電子遷移率電晶體裝置 - Google Patents

高電子遷移率電晶體裝置 Download PDF

Info

Publication number
TWI800940B
TWI800940B TW110137075A TW110137075A TWI800940B TW I800940 B TWI800940 B TW I800940B TW 110137075 A TW110137075 A TW 110137075A TW 110137075 A TW110137075 A TW 110137075A TW I800940 B TWI800940 B TW I800940B
Authority
TW
Taiwan
Prior art keywords
electron mobility
transistor device
high electron
mobility transistor
transistor
Prior art date
Application number
TW110137075A
Other languages
English (en)
Other versions
TW202316671A (zh
Inventor
陳柏安
Original Assignee
新唐科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新唐科技股份有限公司 filed Critical 新唐科技股份有限公司
Priority to TW110137075A priority Critical patent/TWI800940B/zh
Priority to CN202111468311.7A priority patent/CN115939201A/zh
Publication of TW202316671A publication Critical patent/TW202316671A/zh
Application granted granted Critical
Publication of TWI800940B publication Critical patent/TWI800940B/zh

Links

TW110137075A 2021-10-05 2021-10-05 高電子遷移率電晶體裝置 TWI800940B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW110137075A TWI800940B (zh) 2021-10-05 2021-10-05 高電子遷移率電晶體裝置
CN202111468311.7A CN115939201A (zh) 2021-10-05 2021-12-03 高电子迁移率晶体管装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW110137075A TWI800940B (zh) 2021-10-05 2021-10-05 高電子遷移率電晶體裝置

Publications (2)

Publication Number Publication Date
TW202316671A TW202316671A (zh) 2023-04-16
TWI800940B true TWI800940B (zh) 2023-05-01

Family

ID=86551094

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110137075A TWI800940B (zh) 2021-10-05 2021-10-05 高電子遷移率電晶體裝置

Country Status (2)

Country Link
CN (1) CN115939201A (zh)
TW (1) TWI800940B (zh)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170047410A1 (en) * 2015-08-10 2017-02-16 Rohm Co., Ltd. Nitride semiconductor device
TW202018939A (zh) * 2018-11-05 2020-05-16 新唐科技股份有限公司 高電子遷移率電晶體元件及其製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170047410A1 (en) * 2015-08-10 2017-02-16 Rohm Co., Ltd. Nitride semiconductor device
TW202018939A (zh) * 2018-11-05 2020-05-16 新唐科技股份有限公司 高電子遷移率電晶體元件及其製造方法

Also Published As

Publication number Publication date
TW202316671A (zh) 2023-04-16
CN115939201A (zh) 2023-04-07

Similar Documents

Publication Publication Date Title
EP3455883A4 (en) HIGH ELECTRONIC MOBILITY TRANSISTOR (HEMT)
EP3955312A4 (en) HIGH HOLE MOBILITY TRANSISTOR (HHMT) AND METHOD OF MANUFACTURE THEREOF
EP4145533A4 (en) INSULATED GATE TYPE SEMICONDUCTOR DEVICE
WO2016118376A3 (en) Fabrication of a transistor including a tunneling layer
TWI800787B (zh) 半導體元件
EP3591708A4 (en) HIGH MOBILITY ELECTRON MOBILITY TRANSISTOR WITH HIGH BREAKAGE VOLTAGE AND ITS FORMATION PROCESS
EP4131360A4 (en) SEMICONDUCTOR DEVICE
EP4131355A4 (en) SEMICONDUCTOR DEVICE
EP4071945A4 (en) SEMICONDUCTOR DEVICE
EP4254507A4 (en) HIGH ELECTRON MOBILITY TRANSISTOR, MANUFACTURING METHODS AND POWER AMPLIFIER/SWITCH
EP3955313A4 (en) HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) AND METHOD OF MANUFACTURE THEREOF
EP4006991A4 (en) TRANSISTOR HAVING HIGH VOLTAGE WITHSTANDING HIGH ELECTRON MOBILITY AND PROCESS FOR ITS MANUFACTURE
EP3989292A4 (en) BIPOLAR TRANSISTOR WITH ISOLATED GATE
TWI800940B (zh) 高電子遷移率電晶體裝置
EP3965714A4 (en) CONVERTIBLE MOBILITY DEVICE
GB202310040D0 (en) Field effect transistor (fet) devices
EP4187617A4 (en) SEMICONDUCTOR DEVICE
EP4197026A4 (en) SEMICONDUCTOR DEVICE INCLUDING SIDE INSULATOR
EP4091968A4 (en) FOUP TRANSFER DEVICE
EP3918684A4 (en) TERMINAL FOR POWER TRANSISTOR DEVICE
AU2023902362A0 (en) EZI-ROLA Mobility Device
AU2023901958A0 (en) Mobility device
TWI854349B (zh) p型氮化鎵高電子移動率電晶體
TWI853353B (zh) 半導體裝置
TWI801260B (zh) 半導體裝置