TWI775142B - 基板處理裝置，半導體裝置的製造方法及程式 - Google Patents

基板處理裝置，半導體裝置的製造方法及程式 Download PDF

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Publication number
TWI775142B
TWI775142B TW109130887A TW109130887A TWI775142B TW I775142 B TWI775142 B TW I775142B TW 109130887 A TW109130887 A TW 109130887A TW 109130887 A TW109130887 A TW 109130887A TW I775142 B TWI775142 B TW I775142B
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Taiwan
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maintenance
processing
prescription
recipe
semiconductor device
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TW109130887A
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English (en)
Chinese (zh)
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TW202135131A (zh
Inventor
守田修
久保修一
山岡雄治
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日商國際電氣股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Bipolar Transistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW109130887A 2019-10-31 2020-09-09 基板處理裝置，半導體裝置的製造方法及程式 TWI775142B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019198080 2019-10-31
JP2019-198080 2019-10-31
JP2020145475A JP7170692B2 (ja) 2019-10-31 2020-08-31 基板処理装置、半導体装置の製造方法及びプログラム
JP2020-145475 2020-08-31

Publications (2)

Publication Number Publication Date
TW202135131A TW202135131A (zh) 2021-09-16
TWI775142B true TWI775142B (zh) 2022-08-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW109130887A TWI775142B (zh) 2019-10-31 2020-09-09 基板處理裝置，半導體裝置的製造方法及程式

Country Status (4)

Country Link
JP (1) JP7170692B2 (ja)
KR (1) KR102448794B1 (ja)
SG (1) SG10202009600UA (ja)
TW (1) TWI775142B (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010020516A1 (en) * 1999-09-24 2001-09-13 Applied Materials, Inc. Apparatus for performing self cleaning method of forming deep trenches in silicon substrates
JP2015106575A (ja) * 2013-11-28 2015-06-08 株式会社日立国際電気 基板処理装置、基板処理装置の制御方法、制御プログラム及び半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195805A (ja) * 1998-12-25 2000-07-14 Matsushita Electric Ind Co Ltd 電子デバイス製造装置、及びそのメンテナンス制御方法
JP2004193396A (ja) * 2002-12-12 2004-07-08 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
JP2007146252A (ja) * 2005-11-29 2007-06-14 Tokyo Electron Ltd 熱処理方法、熱処理装置及び記憶媒体
JP2009249680A (ja) * 2008-04-04 2009-10-29 Seiko Epson Corp 成膜方法及び成膜装置
JP6159536B2 (ja) * 2012-03-05 2017-07-05 株式会社日立国際電気 基板処理装置、基板処理装置の保守方法及び移載方法並びにプログラム
WO2013146595A1 (ja) * 2012-03-30 2013-10-03 株式会社日立国際電気 基板処理装置、基板処理装置の制御方法、基板処理装置の保守方法及び記録媒体
JP2015162628A (ja) 2014-02-28 2015-09-07 三菱樹脂株式会社 太陽電池用封止シート及び太陽電池モジュール
JP6523119B2 (ja) * 2015-09-28 2019-05-29 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
CN108885968B (zh) * 2016-04-08 2023-12-01 株式会社国际电气 衬底处理装置、半导体器件的制造方法及程序
JP6804029B2 (ja) 2017-12-21 2020-12-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010020516A1 (en) * 1999-09-24 2001-09-13 Applied Materials, Inc. Apparatus for performing self cleaning method of forming deep trenches in silicon substrates
US20010051439A1 (en) * 1999-09-24 2001-12-13 Applied Materials, Inc. Self cleaning method of forming deep trenches in silicon substrates
JP2015106575A (ja) * 2013-11-28 2015-06-08 株式会社日立国際電気 基板処理装置、基板処理装置の制御方法、制御プログラム及び半導体装置の製造方法

Also Published As

Publication number Publication date
SG10202009600UA (en) 2021-05-28
JP7170692B2 (ja) 2022-11-14
KR102448794B1 (ko) 2022-09-28
TW202135131A (zh) 2021-09-16
KR20210052222A (ko) 2021-05-10
JP2021077862A (ja) 2021-05-20

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