TWI756330B - 用於蝕刻半導體結構之含碘化合物 - Google Patents

用於蝕刻半導體結構之含碘化合物 Download PDF

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TWI756330B
TWI756330B TW106145082A TW106145082A TWI756330B TW I756330 B TWI756330 B TW I756330B TW 106145082 A TW106145082 A TW 106145082A TW 106145082 A TW106145082 A TW 106145082A TW I756330 B TWI756330 B TW I756330B
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iodine
silicon
etching
layer
etching compound
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TW106145082A
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Chinese (zh)
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TW201825446A (zh
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維傑 蘇爾拉
拉吾爾 古普達
孫卉
凡卡特斯瓦拉Ｒ 帕雷姆
納坦 史特佛
法比李歐 馬切加尼
維森Ｍ 歐馬吉
詹姆斯 羅爾
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法商液態空氣喬治斯克勞帝方法研究開發股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/694—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks or redeposited masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Drying Of Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW106145082A 2016-12-30 2017-12-21 用於蝕刻半導體結構之含碘化合物 TWI756330B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/396,220 2016-12-30
US15/396,220 US10607850B2 (en) 2016-12-30 2016-12-30 Iodine-containing compounds for etching semiconductor structures

Publications (2)

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TW201825446A TW201825446A (zh) 2018-07-16
TWI756330B true TWI756330B (zh) 2022-03-01

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TW111112039A TWI887536B (zh) 2016-12-30 2017-12-21 用於蝕刻半導體結構之含碘化合物

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US (2) US10607850B2 (https=)
EP (1) EP3563406B1 (https=)
JP (2) JP7227135B2 (https=)
KR (2) KR102626466B1 (https=)
CN (2) CN110178206B (https=)
TW (2) TWI756330B (https=)
WO (1) WO2018126206A1 (https=)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180277387A1 (en) * 2014-08-06 2018-09-27 American Air Liquide, Inc. Gases for low damage selective silicon nitride etching
US10607850B2 (en) * 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US10446681B2 (en) 2017-07-10 2019-10-15 Micron Technology, Inc. NAND memory arrays, and devices comprising semiconductor channel material and nitrogen
US10276398B2 (en) * 2017-08-02 2019-04-30 Lam Research Corporation High aspect ratio selective lateral etch using cyclic passivation and etching
DE102017128070B4 (de) * 2017-08-31 2023-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Ätzen zum Verringern von Bahnunregelmässigkeiten
JP6883495B2 (ja) * 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
JP2019050305A (ja) * 2017-09-11 2019-03-28 東芝メモリ株式会社 プラズマエッチング方法、及び、半導体装置の製造方法
US10297611B1 (en) 2017-12-27 2019-05-21 Micron Technology, Inc. Transistors and arrays of elevationally-extending strings of memory cells
US10559466B2 (en) 2017-12-27 2020-02-11 Micron Technology, Inc. Methods of forming a channel region of a transistor and methods used in forming a memory array
US10529581B2 (en) * 2017-12-29 2020-01-07 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude SiN selective etch to SiO2 with non-plasma dry process for 3D NAND device applications
JP7209567B2 (ja) * 2018-07-30 2023-01-20 東京エレクトロン株式会社 エッチング方法およびエッチング装置
KR102272823B1 (ko) * 2018-07-30 2021-07-02 도쿄엘렉트론가부시키가이샤 에칭 방법 및 에칭 장치
WO2020129725A1 (ja) * 2018-12-21 2020-06-25 昭和電工株式会社 ハロゲンフッ化物によるエッチング方法、半導体の製造方法
US11145504B2 (en) * 2019-01-14 2021-10-12 Applied Materials, Inc. Method of forming film stacks with reduced defects
US12100600B2 (en) * 2019-01-23 2024-09-24 Central Glass Company, Limited Dry etching method, and dry etching agent and storage container therefor
US10629451B1 (en) * 2019-02-01 2020-04-21 American Air Liquide, Inc. Method to improve profile control during selective etching of silicon nitride spacers
US10978473B2 (en) * 2019-02-12 2021-04-13 Taiwan Semiconductor Manufacturing Co., Ltd. Flash memory structure and method of forming the same
CN113614891A (zh) * 2019-03-22 2021-11-05 中央硝子株式会社 干蚀刻方法及半导体装置的制造方法
JP7604145B2 (ja) * 2019-11-25 2024-12-23 東京エレクトロン株式会社 基板処理方法及びプラズマ処理装置
US11521846B2 (en) * 2019-12-16 2022-12-06 Taiwan Semiconductor Manufacturing Company Limited Methods for patterning a silicon oxide-silicon nitride-silicon oxide stack and structures formed by the same
KR102664702B1 (ko) * 2020-02-14 2024-05-09 한양대학교 산학협력단 식각 선택비의 조절에 의한 미세패턴의 형성방법
FR3107280B1 (fr) * 2020-02-19 2023-01-13 Arkema France Composition comprenant un composé iodofluorocarbure
JP2021163839A (ja) * 2020-03-31 2021-10-11 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
TWI899193B (zh) * 2020-04-30 2025-10-01 日商東京威力科創股份有限公司 基板處理方法及電漿處理裝置
US11798811B2 (en) * 2020-06-26 2023-10-24 American Air Liquide, Inc. Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures
US20230386851A1 (en) * 2020-10-15 2023-11-30 Resonac Corporation Etching gas, etching method, and method for producing semiconductor device
US12106971B2 (en) * 2020-12-28 2024-10-01 American Air Liquide, Inc. High conductive passivation layers and method of forming the same during high aspect ratio plasma etching
US11538919B2 (en) 2021-02-23 2022-12-27 Micron Technology, Inc. Transistors and arrays of elevationally-extending strings of memory cells
KR20220122260A (ko) * 2021-02-26 2022-09-02 에스케이스페셜티 주식회사 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법
KR20220126045A (ko) * 2021-03-08 2022-09-15 에스케이스페셜티 주식회사 실리콘 함유막의 다중 적층체의 식각 방법 및 이를 포함하는 반도체 디바이스의 제조방법
US20220293430A1 (en) * 2021-03-12 2022-09-15 Applied Materials, Inc. Isotropic silicon nitride removal
JP7638119B2 (ja) * 2021-03-15 2025-03-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN114023879B (zh) * 2021-10-20 2025-02-11 上海华虹宏力半导体制造有限公司 表面粗糙的多晶硅结构的刻蚀方法
US12188123B2 (en) 2021-12-17 2025-01-07 American Air Liquide, Inc. Deposition of iodine-containing carbon films
US12272562B2 (en) * 2021-12-17 2025-04-08 L'Aire Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Oxygen and iodine-containing hydrofluorocarbon compound for etching semiconductor structures
EP4540856A4 (en) * 2022-06-14 2026-03-25 Air Liquide SIDE WALL PASSIVATION LAYERS AND THEIR FORMATION PROCESS DURING HIGH ASPECT RATIO PLASMA ETCHING
US20260076118A1 (en) * 2022-09-13 2026-03-12 Lam Research Corporation Method for etching features in a stack
WO2024059467A1 (en) * 2022-09-13 2024-03-21 Lam Research Corporation Method for etching features using hf gas
WO2025117301A1 (en) * 2023-11-27 2025-06-05 Lam Research Corporation SELECTIVE ETCH OF STACK USING A HYDROGEN CONTAINING COMPONENT AND AT LEAST ONE OF SeF6, AND IF7 AND TeF6

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201125956A (en) * 2009-09-10 2011-08-01 Matheson Tri Gas Inc High aspect ratio silicon oxide etch

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371143B2 (ja) * 1991-06-03 2003-01-27 ソニー株式会社 ドライエッチング方法
EP0854502A3 (en) * 1997-01-21 1998-09-02 Texas Instruments Incorporated Iodofluorocarbon gas for the etching of dielectric layers and the cleaning of process chambers
JPH10223614A (ja) 1997-02-12 1998-08-21 Daikin Ind Ltd エッチングガスおよびクリーニングガス
JP3559691B2 (ja) * 1997-09-04 2004-09-02 株式会社日立製作所 半導体装置の製造方法
US6387287B1 (en) 1998-03-27 2002-05-14 Applied Materials, Inc. Process for etching oxide using a hexafluorobutadiene and manifesting a wide process window
JP3570903B2 (ja) 1998-09-25 2004-09-29 株式会社ルネサステクノロジ 半導体装置の製造方法
JP5407101B2 (ja) * 2000-09-07 2014-02-05 ダイキン工業株式会社 ドライエッチングガスおよびドライエッチング方法
KR100874813B1 (ko) 2000-11-08 2008-12-19 다이킨 고교 가부시키가이샤 드라이 에칭 가스 및 드라이 에칭 방법
JP2002319574A (ja) * 2001-04-23 2002-10-31 Nec Corp 窒化シリコン膜の除去方法
US6921725B2 (en) * 2001-06-28 2005-07-26 Micron Technology, Inc. Etching of high aspect ratio structures
US7547635B2 (en) * 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
CN100342952C (zh) * 2003-01-29 2007-10-17 昭和电工株式会社 分解氟化合物的方法
US20050241671A1 (en) * 2004-04-29 2005-11-03 Dong Chun C Method for removing a substance from a substrate using electron attachment
JP4761502B2 (ja) 2004-10-07 2011-08-31 株式会社アルバック 層間絶縁膜のドライエッチング方法
US20090191715A1 (en) * 2006-03-09 2009-07-30 Toshio Hayashi Method for etching interlayer dielectric film
TW200735206A (en) 2006-03-10 2007-09-16 Philtech Inc Method of dry etching of interlayer insulation film and etching device
US8125069B2 (en) * 2006-04-07 2012-02-28 Philtech Inc. Semiconductor device and etching apparatus
US7517804B2 (en) 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
US20080191163A1 (en) 2007-02-09 2008-08-14 Mocella Michael T Laser-Assisted Etching Using Gas Compositions Comprising Unsaturated Fluorocarbons
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP4982443B2 (ja) 2008-07-14 2012-07-25 株式会社アルバック 層間絶縁膜のドライエッチング方法
US8372756B2 (en) * 2008-08-29 2013-02-12 Air Products And Chemicals, Inc. Selective etching of silicon dioxide compositions
JP2011071223A (ja) * 2009-09-24 2011-04-07 Ulvac Japan Ltd ドライエッチング方法
KR101660488B1 (ko) 2010-01-22 2016-09-28 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
US9368363B2 (en) 2011-03-17 2016-06-14 Zeon Corporation Etching gas and etching method
US8603921B2 (en) * 2011-07-25 2013-12-10 Applied Materials, Inc. Maintaining mask integrity to form openings in wafers
US8512586B2 (en) 2011-09-01 2013-08-20 Tel Epion Inc. Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
US20150270135A1 (en) * 2011-09-01 2015-09-24 Tel Epion Inc. Gas cluster ion beam etching process
KR102153246B1 (ko) * 2012-10-30 2020-09-07 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 규소-함유 필름의 에칭을 위한 방법 및 에칭 가스
TWI642809B (zh) * 2013-09-09 2018-12-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用蝕刻氣體蝕刻半導體結構的方法
KR102333443B1 (ko) 2014-10-24 2021-12-02 삼성전자주식회사 반도체 소자의 제조 방법
JP6544215B2 (ja) * 2015-01-23 2019-07-17 セントラル硝子株式会社 ドライエッチング方法
US9728422B2 (en) 2015-01-23 2017-08-08 Central Glass Company, Limited Dry etching method
US9659788B2 (en) * 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
US10607850B2 (en) 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201125956A (en) * 2009-09-10 2011-08-01 Matheson Tri Gas Inc High aspect ratio silicon oxide etch

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US10607850B2 (en) 2020-03-31
KR20230070539A (ko) 2023-05-23
WO2018126206A1 (en) 2018-07-05
JP7227135B2 (ja) 2023-02-21
JP2020515047A (ja) 2020-05-21
CN110178206A (zh) 2019-08-27
TW202229216A (zh) 2022-08-01
EP3563406A4 (en) 2020-08-26
CN116884838A (zh) 2023-10-13
EP3563406B1 (en) 2024-04-24
US20200203174A1 (en) 2020-06-25
JP7470834B2 (ja) 2024-04-18
TWI887536B (zh) 2025-06-21
US11430663B2 (en) 2022-08-30
CN110178206B (zh) 2023-08-18
JP2023053121A (ja) 2023-04-12
KR20190093221A (ko) 2019-08-08
KR102537653B1 (ko) 2023-05-26
US20170178923A1 (en) 2017-06-22
TW201825446A (zh) 2018-07-16
KR102626466B1 (ko) 2024-01-17
EP3563406A1 (en) 2019-11-06

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