TWI755844B - Charge generating layer and method for producing the same, organic electroluminescence device, display device, lighting system, and organic thin film solar cell - Google Patents

Charge generating layer and method for producing the same, organic electroluminescence device, display device, lighting system, and organic thin film solar cell Download PDF

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TWI755844B
TWI755844B TW109130452A TW109130452A TWI755844B TW I755844 B TWI755844 B TW I755844B TW 109130452 A TW109130452 A TW 109130452A TW 109130452 A TW109130452 A TW 109130452A TW I755844 B TWI755844 B TW I755844B
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TW202113033A (en
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深川弘彦
清水貴央
佐佐木翼
大野拓
長谷川宗弘
森井克行
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日本放送協會
日商日本觸媒股份有限公司
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    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
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    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract

本發明的課題在於提供一種能夠藉由共蒸鍍來製造、即使在氧或水分的存在下亦不易劣化的電荷產生層,其解決方法是提供一種電荷產生層(10),該電荷產生層(10)包括:包含電洞傳輸性材料及電子接受性材料的層(1);以及包含電子傳輸性材料及電子給予性材料的層(2),所述電子接受性材料是包含選自氟、氯、氰基、硝基、羰基中的取代基的材料,所述電子給予性材料選自酸解離常數pKa為1以上的三級胺、磷腈化合物、胍化合物、包含脒結構的雜環式化合物、具有環結構的烴化合物、啡啉系化合物、三聯吡啶系化合物、環狀吡啶系化合物,且該電荷產生層(10)不含有鹼金屬、金屬氧化物。The subject of the present invention is to provide a charge generation layer that can be produced by co-evaporation and is not easily degraded even in the presence of oxygen or moisture, and the solution is to provide a charge generation layer (10), the charge generation layer ( 10) comprising: a layer (1) comprising a hole-transporting material and an electron-accepting material; and a layer (2) comprising an electron-transporting material and an electron-donating material, the electron-accepting material comprising a material selected from the group consisting of fluorine, Materials for substituents in chlorine, cyano, nitro, and carbonyl groups, wherein the electron-donating material is selected from tertiary amines with an acid dissociation constant pKa of 1 or more, phosphazene compounds, guanidine compounds, and heterocyclic compounds containing an amidine structure A compound, a hydrocarbon compound having a ring structure, a phenanthroline-based compound, a terpyridine-based compound, and a cyclic pyridine-based compound, and the charge generating layer (10) does not contain an alkali metal or a metal oxide.

Description

電荷產生層及其製造方法、有機電激發光元件、顯示裝置、照明裝置以及有機薄膜太陽能電池Charge generation layer and method for producing the same, organic electroluminescent element, display device, lighting device, and organic thin film solar cell

本發明是有關於一種電荷產生層及其製造方法、有機電激發光(electroluminescence)(以下,有時將電激發光(場致發光)記為「EL」。)元件、顯示裝置、照明裝置及有機薄膜太陽能電池。The present invention relates to a charge generation layer and a method for producing the same, organic electroluminescence (hereinafter, electroluminescence (electroluminescence) may be referred to as "EL" in some cases.) element, display device, lighting device, and Organic thin film solar cells.

有機EL元件為自發光型,具有視角寬、可視性優異、能以低電壓驅動、可藉由面發光實現薄型化、輕量化、且能進行多色顯示等特徵。因此,有機EL元件能夠適用於顯示器等顯示裝置、照明裝置。另外,與有機EL元件同樣,作為利用有機薄膜的器件,已知有機薄膜太陽能電池。The organic EL element is a self-luminous type, and has the characteristics of wide viewing angle, excellent visibility, low-voltage driving, thinning and weight reduction by surface emission, and multi-color display. Therefore, the organic EL element can be applied to display devices such as displays and lighting devices. In addition, as a device using an organic thin film, like an organic EL element, an organic thin film solar cell is known.

最近,正在研究在有機EL元件中組裝電荷產生層(專利文獻1~專利文獻3)。藉由使用電荷產生層,能夠不依賴於電極的功函數而在元件內注入(產生)電子、電洞。 另外,作為有機EL元件,研究了在陰極與陽極之間包括多個發光層的串聯結構的有機EL元件(非專利文獻1~非專利文獻6)。藉由使用所述電荷產生層製作所述串聯結構的有機EL元件,能夠提高器件的電流效率及實現長壽命化。 以往,所述電荷產生層使用有機材料、作為無機材料的鹼金屬或金屬氧化物、或者含有鹼金屬的金屬錯合物。 [現有技術文獻] [專利文獻]Recently, assembling a charge generating layer in an organic EL element has been studied (Patent Document 1 to Patent Document 3). By using the charge generating layer, electrons and holes can be injected (generated) into the element without depending on the work function of the electrodes. In addition, as an organic EL element, an organic EL element having a tandem structure including a plurality of light-emitting layers between a cathode and an anode has been studied (Non-Patent Document 1 to Non-Patent Document 6). By fabricating the organic EL element of the tandem structure using the charge generating layer, the current efficiency of the device can be improved and the lifetime of the device can be increased. Conventionally, an organic material, an alkali metal or metal oxide as an inorganic material, or a metal complex containing an alkali metal has been used for the charge generation layer. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利第6488082號公報 [專利文獻2]日本專利第6486624號公報 [專利文獻3]日本專利第6479152號公報 [非專利文獻][Patent Document 1] Japanese Patent No. 6488082 [Patent Document 2] Japanese Patent No. 6486624 [Patent Document 3] Japanese Patent No. 6479152 [Non-patent literature]

[非專利文獻1]<<應用物理通訊(Applied Physics Letters)>>97,063303(2010). [非專利文獻2]<<應用物理快報(Applied Physics Express)>>11,022101(2018). [非專利文獻3]<<先進材料(Advanced Materials)>>,26,5864-5868(2014). [非專利文獻4]<<先進功能材料(Advanced Functional Materials)>>,20,1797-1802(2010). [非專利文獻5] URL:https://pubs.rsc.org/en/content/articlelanding/2018/TC/c7tc05082h#!divAbstract [非專利文獻6] URL:https://www.sciencedirect.com/science/article/pii/S1566119917305323[Non-Patent Document 1] <<Applied Physics Letters>>97, 063303 (2010). [Non-Patent Document 2] <<Applied Physics Express>>11, 022101 (2018). [Non-Patent Document 3] <<Advanced Materials>>, 26, 5864-5868 (2014). [Non-Patent Document 4] <<Advanced Functional Materials>>, 20, 1797-1802 (2010). [Non-Patent Document 5] URL: https://pubs.rsc.org/en/content/articlelanding/2018/TC/c7tc05082h#! divAbstract [Non-Patent Document 6] URL: https://www.sciencedirect.com/science/article/pii/S1566119917305323

[發明所欲解決之課題] 然而,在將有機材料、作為無機材料的鹼金屬用於所述電荷產生層的情況下,在多數器件製造用真空裝置中,對有機材料及無機材料進行成膜的真空室不同,因此難以共蒸鍍有機材料及鹼金屬。另外,在積層有機材料及鹼金屬的情況下,亦需要真空室間的互換,製造所需的步驟數變多。另外,由於鹼金屬在氧或水分的存在下容易劣化,故不適合撓性基板上的器件形成。[The problem to be solved by the invention] However, when an organic material and an alkali metal as an inorganic material are used for the charge generating layer, in many vacuum apparatuses for device manufacturing, since the vacuum chambers for film formation of the organic material and the inorganic material are different, it is difficult to share the same. Evaporation of organic materials and alkali metals. In addition, when an organic material and an alkali metal are laminated, exchange between vacuum chambers is also required, and the number of steps required for production increases. In addition, since alkali metals are easily degraded in the presence of oxygen or moisture, they are not suitable for device formation on flexible substrates.

另外,即使在所述電荷產生層中使用有機材料及作為無機材料的金屬氧化物的情況下,如上所述,由於在多數器件製造用真空裝置中,對有機材料及無機材料進行成膜的真空室不同,因此亦難以共蒸鍍有機材料與金屬氧化物。另外,在積層有機材料與金屬氧化物的情況下,亦需要真空室間的互換,製造所需的步驟數變多。In addition, even in the case where an organic material and a metal oxide as an inorganic material are used in the charge generating layer, as described above, in many vacuum apparatuses for device manufacturing, the vacuum for film-forming the organic material and the inorganic material is required. Since the chambers are different, it is also difficult to co-evaporate organic materials and metal oxides. In addition, when an organic material and a metal oxide are laminated, exchange between vacuum chambers is also required, and the number of steps required for production increases.

另外,在所述電荷產生層中使用有機材料及含有鹼金屬的金屬錯合物的情況下,真空室是共同的,因此容易共蒸鍍,但混合了含有鹼金屬的金屬錯合物的膜在氧或水分的存在下容易劣化,因此不適合撓性基板上的器件形成。In addition, when an organic material and a metal complex containing an alkali metal are used in the charge generating layer, the vacuum chamber is common, so co-evaporation is easy, but a film containing a metal complex containing an alkali metal is mixed It is easily degraded in the presence of oxygen or moisture, so it is not suitable for device formation on flexible substrates.

因此,本發明的課題在於解決所述現有技術的問題,提供一種能夠藉由共蒸鍍進行製造,即使在氧或水分的存在下亦不易劣化的電荷產生層及其製造方法。 另外,本發明的進一步課題在於,提供一種製造容易、即使在氧或水分的存在下亦不易劣化的有機EL元件、顯示裝置、照明裝置、以及有機薄膜太陽能電池。 [解決課題之手段]Therefore, an object of the present invention is to solve the above-mentioned problems of the prior art, and to provide a charge generation layer that can be produced by co-evaporation and is not easily degraded even in the presence of oxygen or moisture, and a method for producing the same. In addition, a further object of the present invention is to provide an organic EL element, a display device, a lighting device, and an organic thin-film solar cell that are easy to manufacture and hardly deteriorate even in the presence of oxygen or moisture. [Means of Solving Problems]

解決所述課題的本發明的主旨構成如下。The gist of the present invention to solve the above-mentioned problems is structured as follows.

本發明的電荷產生層是包括包含電洞傳輸性材料及電子接受性材料的層及包含電子傳輸性材料及電子給予性材料的層的電荷產生層,其中 所述電子接受性材料是包含選自氟、氯、氰基、硝基、羰基中的取代基的材料, 所述電子給予性材料選自酸解離常數pKa為1以上的三級胺、磷腈化合物、胍化合物、包含脒結構的雜環式化合物、具有環結構的烴化合物、啡啉系化合物、三聯吡啶系化合物、環狀吡啶系化合物,且 所述電荷產生層不含鹼金屬、金屬氧化物。 所述本發明的電荷產生層可藉由共蒸鍍來製造,即使在氧或水分的存在下亦不易劣化。The charge generating layer of the present invention is a charge generating layer including a layer containing a hole transport material and an electron accepting material and a layer containing an electron transport material and an electron donating material, wherein The electron-accepting material is a material containing a substituent selected from the group consisting of fluorine, chlorine, cyano, nitro, and carbonyl, The electron-donating material is selected from the group consisting of tertiary amines with an acid dissociation constant pKa of 1 or more, phosphazene compounds, guanidine compounds, heterocyclic compounds containing an amidine structure, hydrocarbon compounds having a ring structure, phenanthroline compounds, and terpyridines series compounds, cyclic pyridine series compounds, and The charge generation layer does not contain alkali metals and metal oxides. The charge generating layer of the present invention can be produced by co-evaporation, and is not easily degraded even in the presence of oxygen or moisture.

在本發明的電荷產生層的較佳例中,所述包含電洞傳輸性材料及電子接受性材料的層與所述包含電子傳輸性材料及電子給予性材料的層直接積層。在此種情況下,能夠進一步削減製造所需的步驟數。In a preferred example of the charge generation layer of the present invention, the layer containing the hole transport material and the electron accepting material and the layer containing the electron transport material and the electron donating material are directly laminated. In this case, the number of steps required for manufacture can be further reduced.

較佳為本發明的電荷產生層更包括僅包含所述電子接受性材料或所述電子給予性材料的層, 所述包含電洞傳輸性材料及電子接受性材料的層與所述包含電子傳輸性材料及電子給予性材料的層經由僅包含所述電子接受性材料或所述電子給予性材料的層而積層。在此種情況下,亦可藉由共蒸鍍來製造電荷產生層,並且所製造的電荷產生層即使在氧或水分的存在下亦不易劣化。Preferably, the charge generating layer of the present invention further includes a layer containing only the electron-accepting material or the electron-donating material, The layer containing the hole-transporting material and the electron-accepting material and the layer containing the electron-transporting material and the electron-donating material are laminated via the layer containing only the electron-accepting material or the electron-donating material . In this case, the charge generation layer can also be produced by co-evaporation, and the produced charge generation layer is not easily degraded even in the presence of oxygen or moisture.

在本發明的電荷產生層的另一較佳例中,所述電洞傳輸性材料的游離電位小於5.7 eV, 所述電子接受性材料是能夠藉由與所述電洞傳輸性材料進行氧化還原反應來形成電荷轉移錯合物的有機物質, 所述給電子給予性材料是能夠與所述電子傳輸性材料形成氫鍵的有機物質。在此種情況下,能夠有效率地使電子自包含電洞傳輸性材料及電子接受性材料的層向包含電子傳輸性材料及電子給予性材料的層遷移,能夠效率良好地向具有電荷產生層的元件內注入電子。In another preferred example of the charge generation layer of the present invention, the free potential of the hole transport material is less than 5.7 eV, The electron-accepting material is an organic substance capable of forming a charge transfer complex by redox reaction with the hole-transporting material, The electron-donating material is an organic substance capable of forming a hydrogen bond with the electron-transporting material. In this case, electrons can be efficiently transferred from the layer containing the hole-transporting material and the electron-accepting material to the layer containing the electron-transporting material and the electron-donating material, and can be efficiently transferred to the layer having the charge generating material inject electrons into the element.

另外,本發明的電荷產生層的製造方法是製造所述電荷產生層的方法,其包括: 共蒸鍍電洞傳輸性材料及電子接受性材料,形成包含電洞傳輸性材料及電子接受性材料的層的步驟;以及 共蒸鍍電子傳輸性材料及電子給予性材料,形成包含電子傳輸性材料及電子給予性材料的層的步驟。 根據該電荷產生層的製造方法,能夠以少的步驟數有效率地製造電荷產生層。In addition, the method for producing a charge generation layer of the present invention is a method for producing the charge generation layer, comprising: a step of co-evaporating the hole transport material and the electron accepting material to form a layer comprising the hole transport material and the electron accepting material; and A step of co-evaporating an electron transporting material and an electron donating material to form a layer containing the electron transporting material and the electron donating material. According to this method of manufacturing a charge generating layer, the charge generating layer can be efficiently manufactured with a small number of steps.

本發明的一個較佳形態的有機電激發光元件是依次包括陰極、發光層及陽極的有機電激發光元件,其中 在所述陰極與所述發光層之間包括所述電荷產生層, 所述包含電洞傳輸性材料及電子接受性材料的層配置在所述陰極側, 所述包含電子傳輸性材料及電子給予性材料的層配置在所述發光層側。所述有機電激發光元件容易製造,即使在氧或水分的存在下亦不易劣化。A preferred form of the organic electroluminescent element of the present invention is an organic electroluminescent element including a cathode, a light-emitting layer and an anode in sequence, wherein including the charge generation layer between the cathode and the light emitting layer, the layer containing the hole transport material and the electron accepting material is arranged on the cathode side, The layer containing the electron-transporting material and the electron-donating material is arranged on the light-emitting layer side. The organic electroluminescent element is easy to manufacture and is not easily degraded even in the presence of oxygen or moisture.

本發明的另一較佳形態的有機電激發光元件是依次包括陰極、發光層及陽極的有機電激發光元件,其中, 在所述陽極與所述發光層之間包括所述電荷產生層, 所述包含電洞傳輸性材料及電子接受性材料的層配置在所述發光層側, 所述包含電子傳輸性材料及電子給予性材料的層配置在所述陽極側。所述有機電激發光元件亦容易製造,即使在氧或水分的存在下亦不易劣化。Another preferred form of the organic electroluminescent element of the present invention is an organic electroluminescent element comprising a cathode, a light-emitting layer and an anode in sequence, wherein, including the charge generation layer between the anode and the light emitting layer, the layer containing the hole transport material and the electron accepting material is arranged on the light emitting layer side, The layer containing the electron-transporting material and the electron-donating material is arranged on the anode side. The organic electroluminescent element is also easy to manufacture and is not easily degraded even in the presence of oxygen or moisture.

本發明的另一較佳形態的有機電激發光元件包括陰極及陽極,且在所述陰極與所述陽極之間包括兩層以上的發光層,且 在所述發光層的其中一層與所述發光層的另一層之間包括所述電荷產生層。所述有機電激發光元件亦容易製造,即使在氧或水分的存在下亦不易劣化。Another preferred form of the organic electroluminescent element of the present invention includes a cathode and an anode, and includes two or more light-emitting layers between the cathode and the anode, and The charge generation layer is included between one of the light-emitting layers and the other of the light-emitting layers. The organic electroluminescent element is also easy to manufacture and is not easily degraded even in the presence of oxygen or moisture.

本發明的顯示裝置包括所述有機電激發光元件。所述顯示裝置容易製造,即使在氧或水分的存在下亦不易劣化。The display device of the present invention includes the organic electroluminescent element. The display device is easy to manufacture and does not deteriorate easily even in the presence of oxygen or moisture.

本發明的照明裝置包括所述有機電激發光元件。所述照明裝置容易製造,即使在氧或水分的存在下亦不易劣化。The lighting device of the present invention includes the organic electroluminescent element. The lighting device is easy to manufacture and is not easily degraded even in the presence of oxygen or moisture.

本發明的有機薄膜太陽能電池包括所述電荷產生層。所述有機薄膜太陽能電池容易製造,即使在氧或水分的存在下亦不易劣化。 [發明的效果]The organic thin film solar cell of the present invention includes the charge generation layer. The organic thin film solar cell is easy to manufacture and is not easily degraded even in the presence of oxygen or moisture. [Effect of invention]

根據本發明,可提供一種能夠藉由共蒸鍍進行製造、即使在氧或水分的存在下亦不易劣化的電荷產生層及其製造方法。 另外,根據本發明,能夠提供製造容易、即使在氧或水分的存在下亦不易劣化的有機EL元件、顯示裝置、照明裝置、以及有機薄膜太陽能電池。ADVANTAGE OF THE INVENTION According to this invention, it can manufacture by co-evaporation, and can provide the charge generation layer which does not deteriorate easily even in presence of oxygen or moisture, and its manufacturing method. In addition, according to the present invention, it is possible to provide an organic EL element, a display device, a lighting device, and an organic thin-film solar cell which are easy to manufacture and hardly deteriorate even in the presence of oxygen or moisture.

以下,針對本發明的電荷產生層及其製造方法、有機電激發光元件、顯示裝置、照明裝置、以及有機薄膜太陽能電池,基於其實施方式進行詳細例示說明。Hereinafter, the charge generating layer and its manufacturing method, organic electroluminescent element, display device, lighting device, and organic thin-film solar cell of the present invention will be described in detail based on embodiments thereof.

<電荷產生層> 圖1是用於說明本發明的電荷產生層的一實施方式的剖面示意圖,圖2是用於說明本發明的電荷產生層的另一實施方式的剖面示意圖。<Charge generation layer> 1 is a schematic cross-sectional view for explaining one embodiment of the charge generation layer of the present invention, and FIG. 2 is a schematic cross-sectional view for explaining another embodiment of the charge generation layer of the present invention.

圖1及圖2所示的電荷產生層10包括:包含電洞傳輸性材料及電子接受性材料的層(以下,有時記為「p-摻雜層」)1;以及包含電子傳輸性材料及電子給予性材料的層(以下有時記為「n-摻雜層」)2,且圖2所示的電荷產生層10更包括僅包含電子接受性材料或電子給予性材料的層(以下,有時記為「摻雜劑層」)3。The charge generation layer 10 shown in FIGS. 1 and 2 includes: a layer (hereinafter, sometimes referred to as a “p-doped layer”) 1 containing a hole transport material and an electron accepting material; and an electron transport material and a layer of electron-donating material (hereinafter sometimes referred to as “n-doped layer”) 2, and the charge generating layer 10 shown in FIG. 2 further includes a layer containing only an electron-accepting material or an electron-donating material (hereinafter , sometimes referred to as "dopant layer") 3.

再者,本發明的電荷產生層可如圖1所示的電荷產生層10般,直接積層p-摻雜層1與n-摻雜層2,亦可如圖2所示的電荷產生層10般,經由摻雜劑層3而積層p-摻雜層1與n-摻雜層2。p-摻雜層1與n-摻雜層2直接積層的情況下,能夠進一步削減製造所需的步驟數。另外,即使在p-摻雜層1與n-摻雜層2經由摻雜劑層3積層的情況下,亦能夠藉由共蒸鍍來製造電荷產生層10,製造的電荷產生層10即使在氧或水分的存在下亦不易劣化。Furthermore, the charge generating layer of the present invention can be directly laminated with the p-doped layer 1 and the n-doped layer 2 like the charge generating layer 10 shown in FIG. Generally, the p-doped layer 1 and the n-doped layer 2 are laminated through the dopant layer 3 . When the p-doped layer 1 and the n-doped layer 2 are directly laminated, the number of steps required for manufacturing can be further reduced. In addition, even in the case where the p-doped layer 1 and the n-doped layer 2 are laminated via the dopant layer 3, the charge generation layer 10 can be produced by co-evaporation, and the produced charge generation layer 10 can be It also does not deteriorate easily in the presence of oxygen or moisture.

此處,本實施方式的電荷產生層10中,所述電子接受性材料是包含選自氟、氯、氰基、硝基、羰基中的電負性大的取代基的材料。另外,本實施方式的電荷產生層10中,所述電子給予性材料選自酸解離常數pKa為1以上的三級胺、磷腈化合物、胍化合物、包含脒結構的雜環式化合物、具有環結構的烴化合物、啡啉系化合物、三聯吡啶系化合物、環狀吡啶系化合物。另外,本實施方式的電荷產生層10的特徵在於不含鹼金屬、金屬氧化物。再者,「不含鹼金屬」除了不含單質的鹼金屬以外,亦包含不含鹼金屬的合金、鹼金屬的化合物(例如,含鹼金屬的錯合物等)。Here, in the charge generation layer 10 of the present embodiment, the electron-accepting material is a material containing a highly electronegative substituent selected from the group consisting of fluorine, chlorine, cyano, nitro, and carbonyl. In addition, in the charge generating layer 10 of the present embodiment, the electron-donating material is selected from the group consisting of tertiary amines having an acid dissociation constant pKa of 1 or more, phosphazene compounds, guanidine compounds, heterocyclic compounds containing an amidine structure, Structured hydrocarbon compounds, phenanthroline compounds, terpyridine compounds, and cyclic pyridine compounds. In addition, the charge generation layer 10 of the present embodiment is characterized in that it does not contain an alkali metal or a metal oxide. In addition, "alkali metal-free" includes not only elemental alkali metal, but also an alkali metal-free alloy and an alkali metal compound (for example, an alkali metal-containing complex, etc.).

由於本實施方式的電荷產生層10既不含鹼金屬亦不含金屬氧化物,僅由有機材料構成,因此,例如在真空室中製作電荷產生層10時,僅利用有機蒸鍍室就能夠容易地製作,製程上的制約少,容易作為構成有機EL元件等的層的材料使用。另外,由於本實施方式的電荷產生層10不使用包含鹼金屬的錯合物,所以對氧、水分的耐性亦高,在撓性基板上亦能夠容易地製作。再者,本實施方式的電荷產生層10可藉由蒸鍍來製造,但不僅可藉由蒸鍍,亦可藉由塗佈來形成。 因此,本實施方式的電荷產生層10能夠藉由共蒸鍍進行製造,即使在氧或水分的存在下亦不易劣化。Since the charge generation layer 10 of the present embodiment contains neither an alkali metal nor a metal oxide, and is formed of only an organic material, for example, when the charge generation layer 10 is fabricated in a vacuum chamber, it is easy to use only an organic vapor deposition chamber. It is easy to use as a material for a layer constituting an organic EL element and the like, with few restrictions on the process. In addition, since the charge generation layer 10 of the present embodiment does not use a complex containing an alkali metal, the resistance to oxygen and moisture is also high, and it can be easily produced on a flexible substrate. In addition, although the charge generation layer 10 of this embodiment can be manufactured by vapor deposition, it can be formed not only by vapor deposition, but also by coating. Therefore, the charge generation layer 10 of the present embodiment can be produced by co-evaporation, and is less likely to deteriorate even in the presence of oxygen or moisture.

接著,參照圖3及圖4,以圖11所示的有機EL元件的電子注入為例,對本實施方式的電荷產生層10中的電荷產生機理及摻雜劑(電子接受性材料、電子給予性材料)的作用進行說明。再者,圖11所示的有機EL元件將在<有機EL元件>項中詳細描述。Next, referring to FIGS. 3 and 4 , taking electron injection into the organic EL element shown in FIG. 11 as an example, the charge generation mechanism and dopants (electron-accepting materials, electron-donating materials, electron-donating materials) in the charge generating layer 10 of this embodiment will be discussed material) will be explained. Furthermore, the organic EL element shown in FIG. 11 will be described in detail in the item <Organic EL element>.

圖3是沒有添加摻雜劑的電荷產生層的能階的說明圖,圖4是添加了摻雜劑的電荷產生層的能階的說明圖。 如圖3所示,p-摻雜層1中包含的最高佔據分子軌道(Highest Occupied Molecular Orbital,HOMO)電離能小的電洞傳輸性材料的電子(●)的行為成為用於向元件注入電子的關鍵。如果能夠有效率地使電子自p-摻雜層1向n-摻雜層2遷移,則效率良好地向元件內注入電子。為了促進該電荷的流動,需要摻雜劑(電子接受性材料、電子給予性材料)。FIG. 3 is an explanatory diagram of the energy level of the charge generation layer to which the dopant is not added, and FIG. 4 is an explanatory diagram of the energy level of the charge generation layer to which the dopant is added. As shown in FIG. 3 , the behavior of electrons (●) of the hole-transporting material with a small ionization energy of the highest occupied molecular orbital (HOMO) contained in the p-doped layer 1 is used to inject electrons into the element. key. If electrons can be efficiently transferred from the p-doped layer 1 to the n-doped layer 2, electrons can be efficiently injected into the element. A dopant (electron-accepting material, electron-donating material) is required to promote the flow of this charge.

圖4示出將摻雜劑(電子接受性材料、電子給予性材料)添加到p-摻雜層1、n-摻雜層2中時的能量的變化。 藉由向p-摻雜層1中添加摻雜劑(電子接受性材料),在p-摻雜層1中,能階向上(電離能小的一方)移位,成為容易向n-摻雜層2的最低未佔分子軌道(Lowest Unoccupied Molecular Orbital,LUMO)傳遞電子的狀態。另一方面,藉由向n-摻雜層2中添加摻雜劑(電子給予性材料),在n-摻雜層2中,電子給予性材料與電子傳輸性材料形成氫鍵,從而電子傳輸性材料的能階向下(電子親和力大的一方)移位,成為n-摻雜層2的LUMO容易接受電子的狀態。進而,電離能亦變大,藉此自發光層側傳送來的電洞的阻止性能亦提高,發光效率提高。 如此,藉由利用添加摻雜劑(電子接受性材料、電子給予性材料)而引起的能階的位移,提高了僅包含有機材料的電荷產生層10中的電荷產生能力。FIG. 4 shows changes in energy when dopants (electron-accepting materials, electron-donating materials) are added to the p-doped layer 1 and the n-doped layer 2 . By adding a dopant (electron-accepting material) to the p-doped layer 1, the energy level of the p-doped layer 1 is shifted upward (the one with the smaller ionization energy), and it becomes easy to do n-doping The Lowest Unoccupied Molecular Orbital (LUMO) of layer 2 transfers the state of electrons. On the other hand, by adding a dopant (electron-donating material) to the n-doped layer 2 , in the n-doped layer 2 , the electron-donating material and the electron-transporting material form hydrogen bonds, whereby electrons are transported. The energy level of the active material is shifted downward (the one with the larger electron affinity), and the LUMO of the n-doped layer 2 is in a state in which electrons are easily accepted. Furthermore, the ionization energy is also increased, whereby the blocking performance of holes transmitted from the light-emitting layer side is also improved, and the light-emitting efficiency is improved. In this way, by utilizing the shift of the energy level by adding the dopant (electron-accepting material, electron-donating material), the charge generating ability in the charge generating layer 10 containing only the organic material is improved.

所述電洞傳輸性材料的游離電位較佳為小於5.7 eV。在此種情況下,p-摻雜層1的HOMO的電離能小,所以容易向n-摻雜層2的LUMO傳遞電子。此處,電洞傳輸性材料的游離電位藉由光電子分光法或光電子產量分光來測定。The free potential of the hole-transporting material is preferably less than 5.7 eV. In this case, since the ionization energy of the HOMO of the p-doped layer 1 is small, it is easy to transfer electrons to the LUMO of the n-doped layer 2 . Here, the free potential of the hole-transporting material is measured by photoelectron spectroscopy or photoelectron yield spectroscopy.

所述電子接受性材料較佳為能夠藉由與所述電洞傳輸性材料進行氧化還原反應形成電荷轉移錯合物的有機物質。在此種情況下,p-摻雜層1的HOMO的電離能變小,容易向n-摻雜層2的LUMO傳遞電子。The electron-accepting material is preferably an organic substance capable of forming a charge transfer complex by redox reaction with the hole-transporting material. In this case, the ionization energy of the HOMO of the p-doped layer 1 is reduced, and electrons are easily transferred to the LUMO of the n-doped layer 2 .

所述電子給予性材料較佳為能夠與所述電子傳輸性材料形成氫鍵的有機物質。在此種情況下,n-摻雜層2中的電子傳輸性材料的能階變低,n-摻雜層2的LUMO容易接收電子。The electron-donating material is preferably an organic substance capable of forming a hydrogen bond with the electron-transporting material. In this case, the energy level of the electron-transporting material in the n-doped layer 2 becomes low, and the LUMO of the n-doped layer 2 easily accepts electrons.

「p-摻雜層」 所述p-摻雜層1包含電洞傳輸性材料及電子接受性材料。 本實施方式的p-摻雜層1包含電離能小的電洞傳輸性材料及電子接受性材料,藉由電子接受性材料吸引電洞傳輸性材料的電子,而容易向元件內注入該電子。 p-摻雜層1的平均厚度較佳為1 nm~100 nm,更佳為3 nm~20 nm。另外,p-摻雜層1中的電洞傳輸性材料:電子接受性材料的混合比(質量比)較佳為0.1:9.9~9.9:0.1,更佳為1:9~9:1。 p-摻雜層1的平均厚度例如可藉由觸針式輪廓儀、分光橢圓偏光儀(spectral ellipsometry)測定。"p-doped layer" The p-doped layer 1 includes a hole-transporting material and an electron-accepting material. The p-doped layer 1 of the present embodiment includes a hole transport material and an electron accepting material with small ionization energy, and the electrons of the hole transport material are attracted by the electron accepting material, and the electrons are easily injected into the device. The average thickness of the p-doped layer 1 is preferably 1 nm to 100 nm, more preferably 3 nm to 20 nm. In addition, the mixing ratio (mass ratio) of the hole-transporting material: the electron-accepting material in the p-doped layer 1 is preferably 0.1:9.9 to 9.9:0.1, more preferably 1:9 to 9:1. The average thickness of the p-doped layer 1 can be measured by, for example, a stylus profiler or a spectroscopic ellipsometer.

作為所述電洞傳輸性材料,可單獨或組合使用各種p型高分子材料(有機聚合物)、各種p型低分子材料。 具體而言,作為電洞傳輸性材料,例如可列舉:4,4',4''-三(N-3-甲基苯基-N-苯基胺基)三苯胺(m-MTDATA)、3,3'-二[1,4]苯並噁嗪並[2,3,4-kl]啡噁嗪、N,N'-二(1-萘基)-N,N'-二苯基-1,1'-聯苯-4,4'-二胺(α-NPD)、N4,N4'-雙(二苯並[b,d]噻吩-4-基)-N4,N4'-二苯基聯苯基-4,4'-二胺(DBTPB)、聚芳基胺、芴-芳基胺共聚物、芴-聯噻吩共聚物、聚(N-乙烯基咔唑)、聚乙烯基芘、聚乙烯基蒽、聚噻吩、聚烷基噻吩、聚己基噻吩、聚(對苯乙炔)、聚噻吩乙炔、芘甲醛樹脂、乙基咔唑甲醛樹脂或它們的衍生物等。該些電洞傳輸性材料亦可作為與其他化合物的混合物使用。其中,特佳為電離能小的材料、例如4,4',4''-三(N-3-甲基苯基-N-苯基胺基)三苯胺(m-MTDATA)等三芳基胺類、3,3'-二[1,4]苯並噁嗪並[2,3,4-kl]啡噁嗪等啡噁嗪衍生物等。As the hole-transporting material, various p-type high molecular weight materials (organic polymers) and various p-type low molecular weight materials can be used alone or in combination. Specifically, examples of the hole-transporting material include 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), 3,3'-bis[1,4]benzoxazino[2,3,4-kl]phenoxazine, N,N'-bis(1-naphthyl)-N,N'-diphenyl -1,1'-biphenyl-4,4'-diamine (α-NPD), N4,N4'-bis(dibenzo[b,d]thiophen-4-yl)-N4,N4'-di Phenylbiphenyl-4,4'-diamine (DBTPB), polyarylamine, fluorene-arylamine copolymer, fluorene-bithiophene copolymer, poly(N-vinylcarbazole), polyvinyl Pyrene, polyvinyl anthracene, polythiophene, polyalkylthiophene, polyhexylthiophene, poly(p-phenylene vinylene), polythiopheneacetylene, pyrene formaldehyde resin, ethylcarbazole formaldehyde resin or derivatives thereof, etc. These hole-transporting materials can also be used as mixtures with other compounds. Among them, materials with low ionization energy, such as triarylamines such as 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), are particularly preferred. such as phenoxazine derivatives such as 3,3'-bis[1,4]benzoxazino[2,3,4-kl]phenoxazine, etc.

所述電子接受性材料是包含選自氟、氯、氰基、硝基、羰基的電負性大的取代基的材料。作為電子接受性材料,例如可使用下述結構式(1-1)所示的2,3,5,6-四氟-7,7,8,8-四氰基醌二甲烷(F4TCNQ)、下述結構式(1-2)所示的1,3,4,5,7,8-六氟-四氰基萘醌二甲烷(F6TCNNQ)、下述結構式(1-3)所示的六氰基-三亞甲基-環丙烷(CN6-CP)、下述結構式(1-4)所示的1,4,5,8,9,12-六氮雜聯三伸苯-2,3,6,7,10,11-六甲腈(HAT-CN)等。 [化1]

Figure 02_image001
所述電子接受性材料可單獨使用一種,亦可將兩種以上組合使用。The electron-accepting material is a material containing a highly electronegative substituent selected from the group consisting of fluorine, chlorine, cyano, nitro, and carbonyl. As the electron-accepting material, for example, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) represented by the following structural formula (1-1), 1,3,4,5,7,8-hexafluoro-tetracyanonaphthoquinodimethane (F6TCNNQ) represented by the following structural formula (1-2), and represented by the following structural formula (1-3) Hexacyano-trimethylene-cyclopropane (CN6-CP), 1,4,5,8,9,12-hexaazabitriphenylene-2 represented by the following structural formula (1-4), 3,6,7,10,11-hexacarbonitrile (HAT-CN) etc. [hua 1]
Figure 02_image001
The electron-accepting material may be used alone or in combination of two or more.

「n-摻雜層」 所述n-摻雜層2包含電子傳輸性材料及電子給予性材料。 本實施方式的n-摻雜層2由電子親和力大的電子傳輸性材料及電子給予性材料構成,擔當接收p-摻雜層1的電子,向元件內輸送的作用。由於電子給予性材料的存在,電子傳輸性材料的電子親和力變大,容易向元件內注入電子,並且電子傳輸性材料的電離能變大,例如,對阻止自發光層輸送來的電洞亦有效,有助於高效率化。 n-摻雜層2的平均厚度較佳為1 nm~100 nm,更佳為3 nm~20 nm。另外,n-摻雜層2中的電子傳輸性材料:電子給予性材料的混合比(質量比)較佳為0.1:9.9~9.9:0.1,更佳為1:9~9:1。 n-摻雜層2的平均厚度例如可藉由觸針式輪廓儀、分光橢圓偏光儀測定。"n-doped layer" The n-doped layer 2 includes an electron-transporting material and an electron-donating material. The n-doped layer 2 of the present embodiment is composed of an electron-transporting material and an electron-donating material having high electron affinity, and plays a role of receiving electrons from the p-doped layer 1 and transporting them into the element. Due to the existence of the electron-donating material, the electron affinity of the electron-transporting material increases, and it is easy to inject electrons into the device, and the ionization energy of the electron-transporting material increases, for example, it is also effective in preventing holes transported from the light-emitting layer. , which contributes to high efficiency. The average thickness of the n-doped layer 2 is preferably 1 nm to 100 nm, more preferably 3 nm to 20 nm. In addition, the mixing ratio (mass ratio) of the electron-transporting material: the electron-donating material in the n-doped layer 2 is preferably 0.1:9.9 to 9.9:0.1, more preferably 1:9 to 9:1. The average thickness of the n-doped layer 2 can be measured by, for example, a stylus profiler or a spectroscopic ellipsometry.

作為所述電子傳輸性材料,可使用通常能夠用作有機EL元件的電子輸送層的材料的任意材料。 具體而言,作為電子傳輸性材料,可列舉:苯基-二芘基氧化膦(POPy2 )等氧化膦衍生物、三-1,3,5-(3'-(吡啶-3''-基)苯基)苯(TmPhPyB)等吡啶衍生物、2-(3-(9-咔唑基)苯基)喹啉(mCQ)等喹啉衍生物、2-苯基-4,6-雙(3,5-二吡啶基苯基)嘧啶(BPyPPM)等嘧啶衍生物、吡嗪衍生物、4,7-二苯基-1,10-啡啉(BPhen)等啡啉衍生物、2,4-雙(4-聯苯基)-6-(4'-(2-吡啶基)-4-聯苯基)-[1,3,5]三嗪(MPT)、2,4,6-三(間吡啶-3-基-苯基)三嗪(TmPPyTz)等三嗪衍生物、3-苯基-4-(1'-萘基)-5-苯基-1,2,4-三唑(TAZ)等三唑衍生物、噁唑衍生物、2-(4-聯苯基)-5-(4-第三丁基苯基-1,3,4-噁二唑(PBD)等噁二唑衍生物、2,2',2''-(1,3,5-苯三基)-三(1-苯基-1-H-苯並咪唑)(TPBI)等咪唑衍生物、萘、苝(perylene)等芳香環四羧酸酐,雙[2-(2-羥基苯基)苯並噻唑]鋅(Zn(BTZ)2 )、三(8-羥基喹啉)鋁(Alq3 )等各種金屬錯合物、2,5-雙(6'-(2',2''-聯吡啶))-1,1-二甲基-3,4-二苯基矽雜環戊二烯(PyPySPyPy)等矽雜環戊二烯(silole)衍生物為代表的有機矽烷衍生物、日本專利特開2013-239691號公報、國際公開第2014/133141號、日本專利特開2016-172728號公報、日本專利特開2016-199507號公報及日本專利特開2016-199508號公報中記載的含硼化合物等,可使用該些的一種或兩種以上。該些電子傳輸性材料中,特佳使用TmPPyTz之類的三嗪衍生物、POPy2 之類的氧化膦衍生物、Alq3 之類的金屬錯合物、TmPhPyB之類的吡啶衍生物。As the electron-transporting material, any material that can be generally used as a material for an electron-transporting layer of an organic EL element can be used. Specifically, examples of the electron-transporting material include phosphine oxide derivatives such as phenyl-dipyrenylphosphine oxide (POPy 2 ), tris-1,3,5-(3'-(pyridine-3''- Pyridine derivatives such as phenyl)benzene (TmPhPyB), quinoline derivatives such as 2-(3-(9-carbazolyl)phenyl)quinoline (mCQ), 2-phenyl-4,6-bis Pyrimidine derivatives such as (3,5-dipyridylphenyl)pyrimidine (BPyPPM), pyrazine derivatives, phenanthroline derivatives such as 4,7-diphenyl-1,10-phenanthroline (BPhen), 2, 4-Bis(4-biphenyl)-6-(4'-(2-pyridyl)-4-biphenyl)-[1,3,5]triazine (MPT), 2,4,6- Triazine derivatives such as tris(m-pyridin-3-yl-phenyl)triazine (TmPPyTz), 3-phenyl-4-(1'-naphthyl)-5-phenyl-1,2,4-triazine Triazole derivatives such as azole (TAZ), oxazole derivatives, 2-(4-biphenyl)-5-(4-tert-butylphenyl-1,3,4-oxadiazole (PBD), etc. Oxadiazole derivatives, imidazole derivatives such as 2,2',2''-(1,3,5-benzenetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBI), Aromatic ring tetracarboxylic anhydrides such as naphthalene and perylene, bis[2-(2-hydroxyphenyl)benzothiazole]zinc (Zn(BTZ) 2 ), tris(8-hydroxyquinoline) aluminum (Alq 3 ) Various metal complexes such as 2,5-bis(6'-(2',2''-bipyridine))-1,1-dimethyl-3,4-diphenylsilacyclopentadiene Organosilane derivatives represented by silacyclopentadiene (silole) derivatives such as (PyPySPyPy), Japanese Patent Laid-Open No. 2013-239691, International Publication No. 2014/133141, Japanese Patent Laid-Open No. 2016-172728 , boron-containing compounds described in Japanese Patent Laid-Open No. 2016-199507 and Japanese Patent Laid-Open No. 2016-199508, etc., one or more of these can be used. Among these electron-transporting materials, it is particularly preferred to use Triazine derivatives such as TmPPyTz, phosphine oxide derivatives such as POPy 2 , metal complexes such as Alq 3 , and pyridine derivatives such as TmPhPyB.

所述電子給予性材料選自酸解離常數pKa為1以上的三級胺、磷腈化合物、胍化合物、包含脒結構的雜環式化合物、具有環結構的烴化合物、啡啉系化合物、三聯吡啶系化合物、環狀吡啶系化合物。電子給予性材料可單獨使用一種,亦可將兩種以上組合使用。 該些電子給予性材料是酸解離常數pKa為1以上、鹼性的化合物。 再者,在本發明中,「pKa」通常是指「水中的酸解離常數」,無法在水中進行測定者是指「二甲亞碸(Dimethyl sulfoxide,DMSO)中的酸解離常數」,亦無法在DMSO中進行測定者是「乙腈中的酸解離常數」。較佳是指「水中的酸解離常數」。The electron-donating material is selected from the group consisting of tertiary amines with an acid dissociation constant pKa of 1 or more, phosphazene compounds, guanidine compounds, heterocyclic compounds containing an amidine structure, hydrocarbon compounds having a ring structure, phenanthroline compounds, and terpyridines series compounds, cyclic pyridine series compounds. The electron-donating material may be used alone or in combination of two or more. These electron-donating materials are basic compounds having an acid dissociation constant pKa of 1 or more. Furthermore, in the present invention, "pKa" generally refers to "acid dissociation constant in water", and those that cannot be measured in water refer to "acid dissociation constant in dimethyl sulfoxide (DMSO)", and also cannot be measured in water. "Acid dissociation constant in acetonitrile" was measured in DMSO. Preferably, it means "acid dissociation constant in water".

作為所述三級胺(三級胺衍生物),可為鏈狀或環狀等的胺化合物,在為環狀的情況下,可為雜環式的胺化合物,亦可為脂肪族胺或芳香族胺等雜環式的胺化合物。三級胺較佳為具有1~4個胺基,更佳為具有1個或2個胺基。另外,作為胺化合物,亦可為具有烷基、烷基胺基、烷氧基的化合物。具體而言,可列舉:(單、二、三)烷基胺;具有1~3個烷基胺基的芳香族胺;具有1~3個烷氧基的芳香族胺等。The tertiary amine (tertiary amine derivative) may be a chain or cyclic amine compound, and in the case of being cyclic, a heterocyclic amine compound, or an aliphatic amine or Heterocyclic amine compounds such as aromatic amines. The tertiary amine preferably has 1 to 4 amine groups, and more preferably has 1 or 2 amine groups. Moreover, as an amine compound, the compound which has an alkyl group, an alkylamine group, and an alkoxy group may be sufficient. Specifically, (mono, di, tri) alkylamines; aromatic amines having 1 to 3 alkylamine groups; aromatic amines having 1 to 3 alkoxy groups, etc. are mentioned.

作為所述三級胺,較佳為不含一級胺及二級胺。具體而言,作為該三級胺,可列舉:下述結構式(2-1)或(2-2)所示的二甲胺基吡啶(dimethylamino pyridine,DMAP)等二烷基胺基吡啶、下述結構式(2-3)所示的三乙胺等具有NR21 R22 R23 所示結構的胺(其中,R21 、R22 、R23 相同或不同,表示可具有取代基的烴基)、下述結構式(2-4)所示的吖啶橙(acridine orange,AOB)等。 [化2]

Figure 02_image002
As said tertiary amine, it is preferable that it does not contain a primary amine and a secondary amine. Specifically, as the tertiary amine, dialkylaminopyridines such as dimethylaminopyridine (DMAP) represented by the following structural formula (2-1) or (2-2), An amine having a structure represented by NR 21 R 22 R 23 such as triethylamine represented by the following structural formula (2-3) (wherein R 21 , R 22 and R 23 are the same or different, and represent a hydrocarbon group which may have a substituent ), acridine orange (AOB) represented by the following structural formula (2-4), etc. [hua 2]
Figure 02_image002

作為所述烴基,較佳為碳數1~30的烴基,更佳為碳數1~8的烴基,進而佳為碳數1~4的烴基,更進而佳為碳數1或2的烴基。在烴基具有取代基的情況下,較佳為亦包含取代基的整體的所述碳數。作為烴基,例示烷基、烯基、炔基,但較佳為烷基。作為具有取代基的烴基中的取代基,可例示鹵原子、雜環基、氰基、羥基、烷氧基、芳氧基、胺基等。作為二甲胺基吡啶,較佳為作為電子給予基的二甲胺基於吡啶環上鍵結的位置2位(2-DMAP)或4位(4-DMAP)。特別是在吡啶環的4位鍵結了二甲胺基的4-二甲胺基吡啶的pKa高。The hydrocarbon group is preferably a hydrocarbon group having 1 to 30 carbon atoms, more preferably a hydrocarbon group having 1 to 8 carbon atoms, still more preferably a hydrocarbon group having 1 to 4 carbon atoms, and still more preferably a hydrocarbon group having 1 or 2 carbon atoms. When a hydrocarbon group has a substituent, it is preferable that it also includes the said carbon number of the whole of a substituent. As the hydrocarbon group, an alkyl group, an alkenyl group, and an alkynyl group are exemplified, but an alkyl group is preferred. As a substituent in the hydrocarbon group having a substituent, a halogen atom, a heterocyclic group, a cyano group, a hydroxyl group, an alkoxy group, an aryloxy group, an amino group and the like can be exemplified. The dimethylaminopyridine is preferably the 2-position (2-DMAP) or the 4-position (4-DMAP) of dimethylamine as an electron donating group based on the bonding position on the pyridine ring. In particular, 4-dimethylaminopyridine in which a dimethylamino group is bonded to the 4-position of the pyridine ring has a high pKa.

作為所述三級胺,亦可使用甲氧基吡啶衍生物等烷氧基吡啶衍生物。作為烷氧基,較佳為碳數1~30的烷氧基,更佳為碳數1~8的烷氧基,進而佳為碳數1~4的烷氧基,更進一步佳為1或2的烷氧基。烷氧基吡啶衍生物亦包括烷氧基吡啶的一個或兩個以上氫原子經取代基取代的結構的化合物。作為取代基,可例示與所述三級胺的烴基的取代基相同的取代基。 作為甲氧基吡啶衍生物,較佳為甲氧基於吡啶環上鍵結的位置為4位的下述結構式(2-5)所示的4-甲氧基吡啶(4-MeOP(methoxy pyridine))或3位的下述結構式(2-6)所示的3-甲氧基吡啶(3-MeOP)。特別是在吡啶環的4位上鍵結有甲氧基的4-甲氧基吡啶由於pKa高而較佳。 [化3]

Figure 02_image004
As the tertiary amine, alkoxypyridine derivatives such as methoxypyridine derivatives can also be used. The alkoxy group is preferably an alkoxy group having 1 to 30 carbon atoms, more preferably an alkoxy group having 1 to 8 carbon atoms, still more preferably an alkoxy group having 1 to 4 carbon atoms, and still more preferably 1 or 1. 2 of the alkoxy. The alkoxypyridine derivatives also include compounds in which one or more hydrogen atoms of the alkoxypyridine are substituted with a substituent. As a substituent, the same substituent as the substituent of the hydrocarbon group of the said tertiary amine can be illustrated. As the methoxypyridine derivative, 4-MeOP (methoxy pyridine ( )) or 3-methoxypyridine (3-MeOP) represented by the following structural formula (2-6) at the 3-position. In particular, 4-methoxypyridine in which a methoxy group is bonded to the 4-position of the pyridine ring is preferred because of its high pKa. [hua 3]
Figure 02_image004

作為所述三級胺,較佳為使用選自具有二烷基胺基及/或烷氧基的雜環式芳香族胺、三烷基胺中的一種或兩種以上,特佳為使用選自二烷基胺基吡啶、三烷基胺、烷氧基吡啶衍生物的一種或兩種以上。As the tertiary amine, it is preferable to use one or two or more selected from heterocyclic aromatic amines and trialkylamines having a dialkylamine group and/or an alkoxy group, and it is particularly preferable to use a One or more of dialkylaminopyridine, trialkylamine and alkoxypyridine derivatives.

所述磷腈化合物(磷腈鹼衍生物)例如是包含下述通式(3-1)表示的結構的化合物。 [化4]

Figure 02_image005
The phosphazene compound (phosphazene base derivative) is, for example, a compound having a structure represented by the following general formula (3-1). [hua 4]
Figure 02_image005

在所述式(3-1)中,R31 表示氫原子或烴基,R32 ~R34 表示氫原子、烴基、-NR'R''(其中,R'、R''分別獨立地表示氫原子、烴基)、或下述式(3-2)所示的基,n表示1~5的數。 [化5]

Figure 02_image006
In the above formula (3-1), R 31 represents a hydrogen atom or a hydrocarbon group, and R 32 to R 34 represent a hydrogen atom, a hydrocarbon group, and -NR'R'' (wherein R' and R'' each independently represent hydrogen atom, hydrocarbon group), or a group represented by the following formula (3-2), and n represents a number of 1 to 5. [hua 5]
Figure 02_image006

在所述式(3-2)中,R35 ~R37 表示氫原子、烴基、或-NR'R''(其中,R'、R''分別獨立地表示氫原子、烴基),m表示1~5的數。In the above formula (3-2), R 35 to R 37 represent a hydrogen atom, a hydrocarbon group, or -NR'R'' (wherein R' and R'' each independently represent a hydrogen atom or a hydrocarbon group), and m represents A number from 1 to 5.

作為所述式(3-1)、(3-2)中的烴基,較佳為碳數1~8的基,更佳為碳數1~4的基。另外,作為烴基,較佳為烷基。作為所述R34 ,特佳為第三丁基。As the hydrocarbon group in the above formulae (3-1) and (3-2), a group having 1 to 8 carbon atoms is preferable, and a group having 1 to 4 carbon atoms is more preferable. Moreover, as a hydrocarbon group, an alkyl group is preferable. As the R 34 , a tertiary butyl group is particularly preferred.

作為所述磷腈鹼衍生物,可舉出下述結構式(3-3)所示的化合物等。 [化6]

Figure 02_image007
Examples of the phosphazene base derivatives include compounds represented by the following structural formula (3-3). [hua 6]
Figure 02_image007

所述胍化合物是包含下述通式(4-1)表示的結構的化合物。 [化7]

Figure 02_image008
The guanidine compound is a compound containing a structure represented by the following general formula (4-1). [hua 7]
Figure 02_image008

所述式(4-1)中,R41 ~R45 相同或不同,表示氫原子或烴基,R41 ~R45 中的2個以上可鍵結而形成環狀結構。另外,所述胍化合物亦可具有多個由所述通式(4-1)表示的結構。In the formula (4-1), R 41 to R 45 are the same or different, and represent a hydrogen atom or a hydrocarbon group, and two or more of R 41 to R 45 may be bonded to form a cyclic structure. In addition, the guanidine compound may have a plurality of structures represented by the general formula (4-1).

作為所述胍化合物,可使用胍環狀衍生物等。作為胍環狀衍生物,可列舉:下述結構式(4-2)所示的7-甲基-1,5,7-三氮雜二環[4.4.0]癸-5-烯(MTBD)、下述結構式(4-3)所示的1,5,7-三氮雜二環[4.4.0]癸-5-烯(TBD)、下述結構式(4-4)所示的化合物(Py-hpp2)等。 [化8]

Figure 02_image009
As the guanidine compound, a guanidine cyclic derivative or the like can be used. Examples of guanidine cyclic derivatives include 7-methyl-1,5,7-triazabicyclo[4.4.0]dec-5-ene (MTBD) represented by the following structural formula (4-2). ), 1,5,7-triazabicyclo[4.4.0]dec-5-ene (TBD) represented by the following structural formula (4-3), represented by the following structural formula (4-4) The compound (Py-hpp2) and so on. [hua 8]
Figure 02_image009

在所述包含脒結構的雜環式化合物中,脒結構為由R51 -C(=NR52 )-NR53 R54 表示的結構(其中,R51 ~R54 相同或不同,表示氫原子或烴基)。作為含有脒結構的雜環式化合物,可列舉:二氮雜雙環壬烯衍生物、二氮雜雙環十一烯衍生物等。In the heterocyclic compound containing an amidine structure, the amidine structure is a structure represented by R 51 -C(=NR 52 )-NR 53 R 54 (wherein R 51 to R 54 are the same or different, and represent a hydrogen atom or hydrocarbon group). As a heterocyclic compound containing an amidine structure, a diazabicyclononene derivative, a diazabicycloundecene derivative, etc. are mentioned.

作為所述二氮雜雙環壬烯衍生物,可列舉下述結構式(5-1)所示的1,5-二氮雜雙環[4.3.0]壬烯-5(DBN)等。 作為所述二氮雜雙環十一烯衍生物,可列舉下述結構式(5-2)所示的1,8-二氮雜雙環[5.4.0]十一烯-7(DBU)等。 [化9]

Figure 02_image010
As the diazabicyclononene derivative, 1,5-diazabicyclo[4.3.0]nonene-5 (DBN) and the like represented by the following structural formula (5-1) can be mentioned. Examples of the diazabicycloundecene derivative include 1,8-diazabicyclo[5.4.0]undecene-7 (DBU) represented by the following structural formula (5-2). [Chemical 9]
Figure 02_image010

所述二氮雜雙環壬烯衍生物中亦包括二氮雜雙環壬烯的一個或兩個以上氫原子經取代基取代的結構的化合物,所述二氮雜雙環十一烯衍生物中亦包括二氮雜雙環十一烯的一個或兩個以上氫原子經取代基取代的結構的化合物。作為取代基,可例示與所述三級胺的烴基的取代基相同者。The diazabicyclononene derivatives also include compounds in which one or more hydrogen atoms of the diazabicyclononene are substituted with substituents, and the diazabicycloundecene derivatives also include A compound having a structure in which one or more hydrogen atoms of diazabicycloundecene are substituted with a substituent. As a substituent, the same thing as the substituent of the hydrocarbon group of the said tertiary amine can be illustrated.

作為所述具有環結構的烴化合物,較佳為具有5員環或6員環作為環結構的化合物,亦較佳為具有5員環與6員環縮環而成的環結構、或多個6員環縮環而成的環結構的化合物。作為5員環,可列舉環戊烷環、環戊二烯環等,作為6員環,可列舉苯環等。 作為具有環結構的烴化合物,較佳為如下的化合物:僅環結構的化合物,在環結構上鍵結有碳數1~20、較佳為1~10、更佳為1~5的烷基的結構的化合物,或多個環結構直接或經由碳數1~20、較佳為1~10、更佳為1~5的烴的連結基鍵結而成的結構的化合物。作為具有環結構的烴化合物的具體例,可列舉下述式(6-1)~(6-14)的化合物。再者,式中的Ph表示苯基。 [化10]

Figure 02_image011
The hydrocarbon compound having a ring structure is preferably a compound having a 5-membered ring or a 6-membered ring as a ring structure, and is also preferably a ring structure formed by condensing a 5-membered ring and a 6-membered ring, or a plurality of A compound with a ring structure formed by condensing a 6-membered ring. As a 5-membered ring, a cyclopentane ring, a cyclopentadiene ring, etc. are mentioned, As a 6-membered ring, a benzene ring etc. are mentioned. As the hydrocarbon compound having a ring structure, a compound having only a ring structure and an alkyl group having 1 to 20 carbon atoms, preferably 1 to 10, more preferably 1 to 5 carbon atoms, is bonded to the ring structure A compound of the structure, or a compound of a structure in which a plurality of ring structures are bonded directly or via a hydrocarbon linking group having 1 to 20 carbon atoms, preferably 1 to 10, more preferably 1 to 5. As a specific example of the hydrocarbon compound which has a ring structure, the compound of following formula (6-1) - (6-14) is mentioned. In addition, Ph in the formula represents a phenyl group. [Chemical 10]
Figure 02_image011

所述啡啉系化合物包含下述結構式(7-1)所表示的啡啉、以及該啡啉中的一個或多個氫原子經1價有機基取代的化合物(以下有時稱為「啡啉衍生物」)。 [化11]

Figure 02_image013
此處,作為1價有機基,可列舉:可具有取代基的芳基、雜環基、烷基、烯基、炔基、烷氧基、芳氧基、芳基烷氧基、矽烷基、羥基、胺基、烷基胺基、芳基胺基、鹵素原子、羧基、硫醇基、環氧基、醯基、可具有取代基的寡芳基(oligoaryl)、1價寡雜環基、烷硫基、芳硫基、芳基烷基、芳基烷氧基、芳基烷硫基、偶氮基、錫烷基、膦基、可具有取代基的芳基膦基、可具有取代基的烷基膦基、芳基氧膦基、可具有取代基的烷基氧膦基、矽氧基、可具有取代基的芳氧基羰基、可具有取代基的烷氧基羰基、可具有取代基的胺甲醯基、可具有取代基的芳基羰基、可具有取代基的烷基羰基、可具有取代基的芳基磺醯基、可具有取代基的烷基磺醯基、可具有取代基的芳基亞磺醯基、可具有取代基的烷基亞磺醯基、甲醯基、氰基、硝基、芳基磺醯氧基、烷基磺醯氧基;甲磺酸酯基、乙磺酸酯基、三氟甲磺酸酯基等烷基磺酸酯基;苯磺酸酯基、對甲苯磺酸酯基等芳基磺酸酯基;苄基磺酸酯基等芳基烷基磺酸酯基、硼基、鋶甲基(sulfonium methyl)、鏻甲基(Phosphonium methyl)、膦酸酯甲基(phosphonate methyl)、芳基磺酸酯基、醛基、乙腈基等。 另外,作為所述1價有機基所具有的取代基,可列舉氟原子、氯原子、溴原子、碘原子的鹵素原子;氯化甲基、溴化甲基、碘化甲基、氟甲基、二氟甲基、三氟甲基等鹵烷基;甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基等碳數1~20的直鏈狀或分支鏈狀烷基;環戊基、環己基、環庚基等碳數5~7的環狀烷基;甲氧基、乙氧基、丙氧基、異丙氧基、丁氧基、異丁氧基、第三丁氧基、戊氧基、己氧基、庚氧基、辛氧基等碳數1~20的直鏈狀或分支鏈狀烷氧基;羥基;硫醇基;硝基;氰基;胺基;偶氮基;甲基胺基、乙基胺基、二甲基胺基、二乙基胺基等具有碳數1~40的烷基的單或二烷基胺基;二苯基胺基、咔唑基等胺基;乙醯基、丙醯基、丁醯基等醯基;乙烯基、1-丙烯基、烯丙基、丁烯基、苯乙烯基等碳數2~20的烯基;乙炔基、1-丙炔基、炔丙基、苯乙炔基等碳數2~20的炔基;乙烯氧基、烯丙氧基等烯氧基;乙炔氧基、苯基乙醯氧基等炔氧基;苯氧基、萘氧基、聯苯氧基、芘氧基等芳氧基;三氟甲基、三氟甲氧基、五氟乙氧基、全氟苯基等全氟基及更長鏈的全氟基;二苯基硼基、二均三甲苯基硼基、雙(全氟苯基)硼基、4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊基等硼基;乙醯基、苯甲醯基等羰基;乙醯氧基、苯甲醯氧基等羰氧基;甲氧基羰基、乙氧基羰基、苯氧基羰基等烷氧基羰基;甲基亞磺醯基、苯基亞磺醯基等亞磺醯基;甲基磺醯基、苯基磺醯基等磺醯基;烷基磺醯氧基;芳基磺醯氧基;膦基;二乙基氧膦基、二苯基氧膦基等氧膦基;三甲基矽烷基、三異丙基矽烷基、二甲基第三丁基矽烷基、三甲氧基矽烷基、三苯基矽烷基等矽烷基;矽烷基氧基;錫烷基;可經鹵素原子或烷基、烷氧基等取代的苯基、2,6-二甲苯基、均三甲苯基、2,3,5,6-四甲苯基(duryl)、聯苯基、三聯苯基、萘基、蒽基、芘基、甲苯甲醯基、大茴香基、氟苯基、二苯基胺基苯基、二甲基胺基苯基、二乙基胺基苯基、菲基基等芳基(可經取代的芳香族烴環基);可經鹵素原子或烷基、烷氧基等取代的噻吩基、呋喃基、矽雜環戊二烯基、噁唑基、噁二唑基、噻唑基、噻二唑基、吖啶基、喹啉基、喹噁啉基、啡啉基、苯並噻吩基、苯並噻唑基、吲哚基、咔唑基、吡啶基、吡咯基、苯並噁唑基、嘧啶基、咪唑基等雜環基(可經取代的芳香族雜環基);羧基;羧酸酯;環氧基;異氰基;氰酸酯基;異氰酸酯基;硫氰酸酯基;異硫氰酸酯基;胺甲醯基;N,N-二甲基胺甲醯基、N,N-二乙基胺甲醯基等N,N-二烷基胺甲醯基;甲醯基;亞硝基;甲醯氧基等。再者,該些基可經鹵素原子或烷基、芳基等取代。進而,該些基可相互以任意部位鍵結而形成環。The phenanthroline-based compound includes phenanthroline represented by the following structural formula (7-1), and a compound in which one or more hydrogen atoms in the phenanthroline are substituted with a monovalent organic group (hereinafter sometimes referred to as "phenanthroline"). phospholine derivatives"). [Chemical 11]
Figure 02_image013
Here, examples of the monovalent organic group include optionally substituted aryl groups, heterocyclic groups, alkyl groups, alkenyl groups, alkynyl groups, alkoxy groups, aryloxy groups, arylalkoxy groups, silyl groups, hydroxyl group, amino group, alkylamine group, arylamine group, halogen atom, carboxyl group, thiol group, epoxy group, acyl group, optionally substituted oligoaryl group, monovalent oligoheterocyclic group, Alkylthio, arylthio, arylalkyl, arylalkoxy, arylalkylthio, azo, stannyl, phosphino, optionally substituted arylphosphino, optionally substituted Alkylphosphino, arylphosphinoyl, optionally substituted alkylphosphinoyl, siloxy, optionally substituted aryloxycarbonyl, optionally substituted alkoxycarbonyl, optionally substituted carboxyl, optionally substituted arylcarbonyl, optionally substituted alkylcarbonyl, optionally substituted arylsulfonyl, optionally substituted alkylsulfonyl, optionally substituted Arylsulfinyl, optionally substituted alkylsulfinyl, carboxyl, cyano, nitro, arylsulfonyloxy, alkylsulfonyloxy; mesylate group , ethanesulfonate, trifluoromethanesulfonate and other alkylsulfonate groups; benzenesulfonate, p-toluenesulfonate and other arylsulfonate groups; benzylsulfonate and other arylsulfonate groups Alkyl sulfonate, boron, sulfonium methyl, Phosphonium methyl, phosphonate methyl, aryl sulfonate, aldehyde, acetonitrile, etc. . In addition, as the substituent which the monovalent organic group has, there may be mentioned halogen atoms of fluorine atom, chlorine atom, bromine atom, and iodine atom; methyl chloride, methyl bromide, methyl iodide, and fluoromethyl group. , difluoromethyl, trifluoromethyl and other haloalkyl groups; methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, etc. carbon number 1-20 linear or branched chain alkyl groups; cyclic alkyl groups with 5 to 7 carbon atoms such as cyclopentyl, cyclohexyl, and cycloheptyl; methoxy, ethoxy, propoxy, isopropoxy, Butoxy, isobutoxy, tertiary butoxy, pentyloxy, hexyloxy, heptyloxy, octyloxy and other linear or branched alkoxy groups with 1 to 20 carbon atoms; hydroxyl; A thiol group; a nitro group; a cyano group; an amino group; an azo group; or dialkylamine; diphenylamine, carbazolyl and other amine groups; acetyl, propionyl, butyryl and other acetyl groups; vinyl, 1-propenyl, allyl, butenyl, benzene Alkenyl groups with 2 to 20 carbon atoms such as vinyl; alkynyl groups with 2 to 20 carbon atoms such as ethynyl, 1-propynyl, propargyl, and phenylethynyl; alkenyl groups such as vinyloxy and allyloxy ; alkynyloxy groups such as acetyleneoxy and phenylacetyloxy; aryloxy groups such as phenoxy, naphthyloxy, biphenyloxy, pyreneoxy; trifluoromethyl, trifluoromethoxy, pentafluoro Perfluoro groups such as ethoxy, perfluorophenyl and longer chain perfluoro groups; diphenylboronyl, dimesitylboronyl, bis(perfluorophenyl)boronyl, 4,4,5 ,5-tetramethyl-1,3,2-dioxaborolyl and other boronyl groups; carbonyl groups such as acetyl and benzyl groups; carbonyl groups such as acetyloxy and benzyloxy groups ; alkoxycarbonyl such as methoxycarbonyl, ethoxycarbonyl, phenoxycarbonyl; sulfinyl such as methylsulfinyl, phenylsulfinyl; methylsulfonyl, phenylsulfonyl sulfonyl groups such as alkyl; alkylsulfonyloxy; arylsulfonyloxy; phosphino groups; Silyl silyl group, dimethyl tert-butyl silyl group, trimethoxy silyl group, triphenyl silyl group, etc.; silyloxy group; stannyl group; Substituted phenyl, 2,6-xylyl, mesityl, 2,3,5,6-tetramethylphenyl (duryl), biphenyl, terphenyl, naphthyl, anthracenyl, pyrenyl, Aryl (optionally substituted aromatic thienyl, furanyl, silacyclopentadienyl, oxazolyl, oxadiazolyl, thiazolyl, thiadiazolyl, Acridyl, quinolinyl, quinoxolinyl, phenanthroline, benzothienyl, benzothiazolyl, indolyl, carbazolyl, pyridyl, pyrrolyl, benzoxazolyl, pyrimidinyl, Heterocyclic groups such as imidazolyl groups (aromatic heterocyclic groups which may be substituted); carboxyl groups; carboxylate groups; epoxy groups; isocyano groups; cyanate groups; isocyanate groups; thiocyanate groups; isothiocyanate groups Ester group; carbamoyl; N,N-dimethylaminocarboxy, N, N-diethylamine carboxyl, etc. N,N-dialkylamine carboxyl; carboxyl; nitroso; carboxyloxy and the like. Furthermore, these groups may be substituted with a halogen atom or an alkyl group, an aryl group, or the like. Furthermore, these groups may be bonded to each other at arbitrary positions to form a ring.

所述啡啉衍生物可為在分子結構中具有多個啡啉結構的化合物。The phenanthroline derivative may be a compound having multiple phenanthroline structures in the molecular structure.

作為所述啡啉衍生物,例如可列舉下述結構式(7-2)~(7-9)所示的化合物。 [化12]

Figure 02_image014
Examples of the phenanthroline derivatives include compounds represented by the following structural formulae (7-2) to (7-9). [Chemical 12]
Figure 02_image014

所述三聯吡啶系化合物是具有三聯吡啶結構(3個吡啶鍵結而成的結構)的化合物,包含下述結構式(8-1)所表示的三聯吡啶以及該三聯吡啶中的一個或多個氫原子經1價有機基取代的化合物(以下有時稱為「三聯吡啶衍生物」)。 [化13]

Figure 02_image015
此處,作為1價有機基,可列舉:可具有取代基的芳基、雜環基、烷基、烯基、炔基、烷氧基、芳氧基、芳基烷氧基、矽烷基、羥基、胺基、烷基胺基、芳基胺基、鹵素原子、羧基、硫醇基、環氧基、醯基、可具有取代基的寡芳基(oligoaryl)、1價寡雜環基、烷硫基、芳硫基、芳基烷基、芳基烷氧基、芳基烷硫基、偶氮基、錫烷基、膦基、可具有取代基的芳基膦基、可具有取代基的烷基膦基、芳基氧膦基、可具有取代基的烷基氧膦基、矽氧基、可具有取代基的芳氧基羰基、可具有取代基的烷氧基羰基、可具有取代基的胺甲醯基、可具有取代基的芳基羰基、可具有取代基的烷基羰基、可具有取代基的芳基磺醯基、可具有取代基的烷 基磺醯基、可具有取代基的芳基亞磺醯基、可具有取代基的烷基亞磺醯基、甲醯基、氰基、硝基、芳基磺醯氧基、烷基磺醯氧基;甲磺酸酯基、乙磺酸酯基、三氟甲磺酸酯基等烷基磺酸酯基;苯磺酸酯基、對甲苯磺酸酯基等芳基磺酸酯基;苄基磺酸酯基等芳基烷基磺酸酯基、硼基、鋶甲基、鏻甲基、膦酸酯甲基、芳基磺酸酯基、醛基、乙腈基等。 作為所述1價有機基所具有的取代基,可列舉氟原子、氯原子、溴原子、碘原子的鹵素原子;氯化甲基、溴化甲基、碘化甲基、氟甲基、二氟甲基、三氟甲基等鹵烷基;甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基等碳數1~20的直鏈狀或分支鏈狀烷基;環戊基、環己基、環庚基等碳數5~7的環狀烷基;甲氧基、乙氧基、丙氧基、異丙氧基、丁氧基、異丁氧基、第三丁氧基、戊氧基、己氧基、庚氧基、辛氧基等碳數1~20的直鏈狀或分支鏈狀烷氧基;羥基;硫醇基;硝基;氰基;胺基;偶氮基;甲基胺基、乙基胺基、二甲基胺基、二乙基胺基等具有碳數1~40的烷基的單或二烷基胺基;二苯基胺基、咔唑基等胺基;乙醯基、丙醯基、丁醯基等醯基;乙烯基、1-丙烯基、烯丙基、丁烯基、苯乙烯基等碳數2~20的烯基;乙炔基、1-丙炔基、炔丙基、苯乙炔基等碳數2~20的炔基;乙烯氧基、烯丙氧基等烯氧基;乙炔氧基、苯基乙醯氧基等炔氧基;苯氧基、萘氧基、聯苯氧基、芘氧基等芳氧基;三氟甲基、三氟甲氧基、五氟乙氧基、全氟苯基等全氟基及更長鏈的全氟基;二苯基硼基、二均三甲苯基硼基、雙(全氟苯基)硼基、4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊基等硼基;乙醯基、苯甲醯基等羰基;乙醯氧基、苯甲醯氧基等羰氧基;甲氧基羰基、乙氧基羰基、苯氧基羰基等烷氧基羰基;甲基亞磺醯基、苯基亞磺醯基等亞磺醯基;甲基磺醯基、苯基磺醯基等磺醯基;烷基磺醯氧基;芳基磺醯氧基;膦基;二乙基氧膦基、二苯基氧膦基等氧膦基;三甲基矽烷基、三異丙基矽烷基、二甲基第三丁基矽烷基、三甲氧基矽烷基、三苯基矽烷基等矽烷基;矽烷基氧基;錫烷基;可經鹵素原子或烷基、烷氧基等取代的苯基、2,6-二甲苯基、均三甲苯基、2,3,5,6-四甲苯基(duryl)、聯苯基、三聯苯基、萘基、蒽基、芘基、甲苯甲醯基、大茴香基、氟苯基、二苯基胺基苯基、二甲基胺基苯基、二乙基胺基苯基、菲基基等芳基(可經取代的芳香族烴環基);可經鹵素原子或烷基、烷氧基等取代的噻吩基、呋喃基、矽雜環戊二烯基、噁唑基、噁二唑基、噻唑基、噻二唑基、吖啶基、喹啉基、喹噁啉基、啡啉基、苯並噻吩基、苯並噻唑基、吲哚基、咔唑基、吡啶基、吡咯基、苯並噁唑基、嘧啶基、咪唑基等雜環基(可經取代的芳香族雜環基);羧基;羧酸酯;環氧基;異氰基;氰酸酯基;異氰酸酯基;硫氰酸酯基;異硫氰酸酯基;胺甲醯基;N,N-二甲基胺甲醯基、N,N-二乙基胺甲醯基等N,N-二烷基胺甲醯基;甲醯基;亞硝基;甲醯氧基等。再者,該些基可經鹵素原子或烷基、芳基等取代。進而,該些基可相互以任意部位鍵結而形成環。The terpyridine-based compound is a compound having a terpyridine structure (a structure formed by three pyridine bonds), and includes a terpyridine represented by the following structural formula (8-1) and one or more of the terpyridines A compound in which a hydrogen atom is substituted with a monovalent organic group (hereinafter sometimes referred to as a "terpyridine derivative"). [Chemical 13]
Figure 02_image015
Here, examples of the monovalent organic group include optionally substituted aryl groups, heterocyclic groups, alkyl groups, alkenyl groups, alkynyl groups, alkoxy groups, aryloxy groups, arylalkoxy groups, silyl groups, hydroxyl group, amino group, alkylamine group, arylamine group, halogen atom, carboxyl group, thiol group, epoxy group, acyl group, optionally substituted oligoaryl group, monovalent oligoheterocyclic group, Alkylthio, arylthio, arylalkyl, arylalkoxy, arylalkylthio, azo, stannyl, phosphino, optionally substituted arylphosphino, optionally substituted Alkylphosphino, arylphosphinoyl, optionally substituted alkylphosphinoyl, siloxy, optionally substituted aryloxycarbonyl, optionally substituted alkoxycarbonyl, optionally substituted carboxyl, optionally substituted arylcarbonyl, optionally substituted alkylcarbonyl, optionally substituted arylsulfonyl, optionally substituted alkylsulfonyl, optionally substituted Arylsulfinyl, optionally substituted alkylsulfinyl, carboxyl, cyano, nitro, arylsulfonyloxy, alkylsulfonyloxy; mesylate group , ethanesulfonate, trifluoromethanesulfonate and other alkylsulfonate groups; benzenesulfonate, p-toluenesulfonate and other arylsulfonate groups; benzylsulfonate and other arylsulfonate groups Alkyl sulfonate group, boron group, perylene methyl group, phosphonium methyl group, phosphonate methyl group, aryl sulfonate group, aldehyde group, acetonitrile group, etc. Examples of the substituent of the monovalent organic group include a fluorine atom, a chlorine atom, a bromine atom, and a halogen atom of an iodine atom; methyl chloride, methyl bromide, methyl iodide, fluoromethyl, bismuth Haloalkyl such as fluoromethyl and trifluoromethyl; methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, etc. Chain or branched alkyl groups; cyclic alkyl groups with 5 to 7 carbon atoms such as cyclopentyl, cyclohexyl, and cycloheptyl; methoxy, ethoxy, propoxy, isopropoxy, butoxy linear or branched alkoxy with 1 to 20 carbon atoms, such as radical, isobutoxy, tertiary butoxy, pentyloxy, hexyloxy, heptyloxy, octyloxy; hydroxyl; thiol nitro group; cyano group; amine group; azo; Alkylamino; Diphenylamine, carbazolyl and other amine groups; Acetyl, propionyl, butyryl and other acyl; vinyl, 1-propenyl, allyl, butenyl, styryl Alkenyl with 2 to 20 carbon atoms; alkynyl with 2 to 20 carbon atoms such as ethynyl, 1-propynyl, propargyl, and phenylethynyl; alkenyl groups such as vinyloxy and allyloxy; acetylene alkynyloxy such as oxy, phenylacetyloxy; aryloxy such as phenoxy, naphthyloxy, biphenyloxy, pyreneoxy; trifluoromethyl, trifluoromethoxy, pentafluoroethoxy base, perfluorophenyl and other perfluoro groups and longer-chain perfluoro groups; diphenylboronyl, dimesitylboronyl, bis(perfluorophenyl)boronyl, 4,4,5,5 - Boronyl groups such as tetramethyl-1,3,2-dioxaborolyl; carbonyl groups such as acetyl and benzyl groups; carbonyl groups such as acetyloxy and benzyloxy groups; methyl Oxycarbonyl, ethoxycarbonyl, phenoxycarbonyl and other alkoxycarbonyl groups; methylsulfinyl, phenylsulfinyl and other sulfinyl groups; methylsulfonyl, phenylsulfonyl, etc. Sulfonyl; Alkylsulfonyloxy; Arylsulfonyloxy; Phosphinoyl; Silyl, dimethyl tert-butylsilyl, trimethoxysilyl, triphenylsilyl and other silyl groups; silyloxy; Phenyl, 2,6-xylyl, mesityl, 2,3,5,6-tetramethylphenyl (duryl), biphenyl, terphenyl, naphthyl, anthracenyl, pyrene, toluyl Aryl groups such as acyl group, anisyl group, fluorophenyl group, diphenylaminophenyl group, dimethylaminophenyl group, diethylaminophenyl group, and phenanthryl group (aromatic hydrocarbon ring that may be substituted) base); thienyl, furyl, silacyclopentadienyl, oxazolyl, oxadiazolyl, thiazolyl, thiadiazolyl, acridine which may be substituted by halogen atoms or alkyl, alkoxy, etc. base, quinolinyl, quinoxolinyl, phenanthroline, benzothienyl, benzothiazolyl, indolyl, carbazolyl, pyridyl, pyrrolyl, benzoxazolyl, pyrimidinyl, imidazolyl isoheterocyclic group (aromatic heterocyclic group which may be substituted); carboxyl group; carboxylate group; epoxy group; isocyano group; cyanate group; isocyanate group; thiocyanate group; isothiocyanate group ; Aminocarboxy; N,N-Dimethylcarbamoyl, N,N-bis Ethylamine carboxyl, etc. N,N-dialkylamine carboxyl; carboxyl; nitroso; carboxyloxy, etc. Furthermore, these groups may be substituted with a halogen atom or an alkyl group, an aryl group, or the like. Furthermore, these groups may be bonded to each other at arbitrary positions to form a ring.

作為所述三聯吡啶系化合物,可列舉2,2':6',2''-三聯吡啶、1,3-雙(4'-(2,2':6',2''-三聯吡啶基))苯、6''-(3-(5H-二苯並[b,d]硼雜環戊二烯-5-基)-5-(4',6'-二乙基-[2,2'-聯吡啶]-6-基)噻吩-2-基)-4,6-二乙基-2,2':6'3''-三聯吡啶)等。As the terpyridine compound, 2,2':6',2''-terpyridine, 1,3-bis(4'-(2,2':6',2''-terpyridine) )) benzene, 6''-(3-(5H-dibenzo[b,d]borol-5-yl)-5-(4',6'-diethyl-[2, 2'-bipyridyl]-6-yl)thiophen-2-yl)-4,6-diethyl-2,2':6'3''-terpyridine) and the like.

所述環狀吡啶系化合物較佳為具有多個吡啶環狀鍵結的結構的化合物,多個吡啶環直接或經由氮原子鍵結而形成環結構的化合物。作為該環狀吡啶系化合物,可列舉具有下述通式(9-1)表示的結構的化合物。 [化14]

Figure 02_image016
The cyclic pyridine-based compound is preferably a compound having a structure in which a plurality of pyridine rings are bonded in a ring, and a plurality of pyridine rings are bonded directly or via a nitrogen atom to form a ring structure. Examples of the cyclic pyridine-based compound include compounds having a structure represented by the following general formula (9-1). [Chemical 14]
Figure 02_image016

所述通式(9-1)中,R9 相同或不同,表示氫原子或1價有機基。n相同或不同,是0或1的整數。m是3~10的整數。In the general formula (9-1), R 9 is the same or different, and represents a hydrogen atom or a monovalent organic group. n is the same or different, and is an integer of 0 or 1. m is an integer of 3-10.

在所述通式(9-1)中的R9 為1價有機基的情況下,作為1價有機基,可列舉:可具有取代基的芳基、雜環基、烷基、烯基、炔基、烷氧基、芳氧基、芳基烷氧基、矽烷基、羥基、胺基、烷基胺基、芳基胺基、鹵素原子、羧基、硫醇基、環氧基、醯基、可具有取代基的寡芳基(oligoaryl)、1價寡雜環基、烷硫基、芳硫基、芳基烷基、芳基烷氧基、芳基烷硫基、偶氮基、錫烷基、膦基、可具有取代基的芳基膦基、可具有取代基的烷基膦基、芳基氧膦基、可具有取代基的烷基氧膦基、矽氧基、可具有取代基的芳氧基羰基、可具有取代基的烷氧基羰基、可具有取代基的胺甲醯基、可具有取代基的芳基羰基、可具有取代基的烷基羰基、可具有取代基的芳基磺醯基、可具有取代基的烷基磺醯基、可具有取代基的芳基亞磺醯基、可具有取代基的烷基亞磺醯基、甲醯基、氰基、硝基、芳基磺醯氧基、烷基磺醯氧基;甲磺酸酯基、乙磺酸酯基、三氟甲磺酸酯基等烷基磺酸酯基;苯磺酸酯基、對甲苯磺酸酯基等芳基磺酸酯基;苄基磺酸酯基等芳基烷基磺酸酯基、硼基、鋶甲基、鏻甲基、膦酸酯甲基、芳基磺酸酯基、醛基、乙腈基等。 作為所述1價有機基所具有的取代基,可列舉:氟原子、氯原子、溴原子、碘原子的鹵素原子;氯化甲基、溴化甲基、碘化甲基、氟甲基、二氟甲基、三氟甲基等鹵烷基;甲基、乙基、丙基、異丙基、丁基、異丁基、第二丁基、第三丁基等碳數1~20的直鏈狀或分支鏈狀烷基;環戊基、環己基、環庚基等碳數5~7的環狀烷基;甲氧基、乙氧基、丙氧基、異丙氧基、丁氧基、異丁氧基、第三丁氧基、戊氧基、己氧基、庚氧基、辛氧基等碳數1~20的直鏈狀或分支鏈狀烷氧基;羥基;硫醇基;硝基;氰基;胺基;偶氮基;甲基胺基、乙基胺基、二甲基胺基、二乙基胺基等具有碳數1~40的烷基的單或二烷基胺基;二苯基胺基、咔唑基等胺基;乙醯基、丙醯基、丁醯基等醯基;乙烯基、1-丙烯基、烯丙基、丁烯基、苯乙烯基等碳數2~20的烯基;乙炔基、1-丙炔基、炔丙基、苯乙炔基等碳數2~20的炔基;乙烯氧基、烯丙氧基等烯氧基;乙炔氧基、苯基乙醯氧基等炔氧基;苯氧基、萘氧基、聯苯氧基、芘氧基等芳氧基;三氟甲基、三氟甲氧基、五氟乙氧基、全氟苯基等全氟基及更長鏈的全氟基;二苯基硼基、二均三甲苯基硼基、雙(全氟苯基)硼基、4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊基等硼基;乙醯基、苯甲醯基等羰基;乙醯氧基、苯甲醯氧基等羰氧基;甲氧基羰基、乙氧基羰基、苯氧基羰基等烷氧基羰基;甲基亞磺醯基、苯基亞磺醯基等亞磺醯基;甲基磺醯基、苯基磺醯基等磺醯基;烷基磺醯氧基;芳基磺醯氧基;膦基;二乙基氧膦基、二苯基氧膦基等氧膦基;三甲基矽烷基、三異丙基矽烷基、二甲基第三丁基矽烷基、三甲氧基矽烷基、三苯基矽烷基等矽烷基;矽烷基氧基;錫烷基;可經鹵素原子或烷基、烷氧基等取代的苯基、2,6-二甲苯基、均三甲苯基、2,3,5,6-四甲苯基(duryl)、聯苯基、三聯苯基、萘基、蒽基、芘基、甲苯甲醯基、大茴香基、氟苯基、二苯基胺基苯基、二甲基胺基苯基、二乙基胺基苯基、菲基基等芳基(可經取代的芳香族烴環基);可經鹵素原子或烷基、烷氧基等取代的噻吩基、呋喃基、矽雜環戊二烯基、噁唑基、噁二唑基、噻唑基、噻二唑基、吖啶基、喹啉基、喹噁啉基、啡啉基、苯並噻吩基、苯並噻唑基、吲哚基、咔唑基、吡啶基、吡咯基、苯並噁唑基、嘧啶基、咪唑基等雜環基(可經取代的芳香族雜環基);羧基;羧酸酯;環氧基;異氰基;氰酸酯基;異氰酸酯基;硫氰酸酯基;異硫氰酸酯基;胺甲醯基;N,N-二甲基胺甲醯基、N,N-二乙基胺甲醯基等N,N-二烷基胺甲醯基;甲醯基;亞硝基;甲醯氧基等。再者,可經鹵素原子或烷基、芳基等取代。進而,該些基可相互以任意部位鍵結而形成環。 其中,作為R9 的1價有機基,較佳為甲基、乙基、苯基、正丙基、異丙基、異丁基。When R 9 in the general formula (9-1) is a monovalent organic group, examples of the monovalent organic group include an optionally substituted aryl group, heterocyclic group, alkyl group, alkenyl group, Alkynyl group, alkoxy group, aryloxy group, arylalkoxy group, silyl group, hydroxyl group, amino group, alkylamine group, arylamine group, halogen atom, carboxyl group, thiol group, epoxy group, acyl group , oligoaryl (oligoaryl), monovalent oligoheterocyclic group, alkylthio, arylthio, arylalkyl, arylalkoxy, arylalkylthio, azo, tin which may have substituents Alkyl, phosphino, optionally substituted arylphosphino, optionally substituted alkylphosphino, arylphosphinoyl, optionally substituted alkylphosphino, siloxy, optionally substituted aryloxycarbonyl group, optionally substituted alkoxycarbonyl group, optionally substituted carbamoyl, optionally substituted arylcarbonyl, optionally substituted alkylcarbonyl, optionally substituted Arylsulfonyl, optionally substituted alkylsulfonyl, optionally substituted arylsulfinyl, optionally substituted alkylsulfinyl, formyl, cyano, nitro , arylsulfonyloxy, alkylsulfonyloxy; methanesulfonate, ethanesulfonate, trifluoromethanesulfonate and other alkylsulfonate groups; benzenesulfonate, p-toluene Aryl sulfonate groups such as sulfonate groups; aryl alkyl sulfonate groups such as benzyl sulfonate groups, boron groups, perylene methyl groups, phosphonium methyl groups, phosphonate methyl ester groups, aryl sulfonate groups group, aldehyde group, acetonitrile group, etc. Examples of the substituent which the monovalent organic group has include: a fluorine atom, a chlorine atom, a bromine atom, a halogen atom of an iodine atom; methyl chloride, methyl bromide, methyl iodide, fluoromethyl, Difluoromethyl, trifluoromethyl and other haloalkyl groups; methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, etc. with a carbon number of 1 to 20 Straight-chain or branched-chain alkyl groups; cyclic alkyl groups with 5 to 7 carbon atoms such as cyclopentyl, cyclohexyl, and cycloheptyl; methoxy, ethoxy, propoxy, isopropoxy, butyl Linear or branched alkoxy with 1 to 20 carbon atoms such as oxy, isobutoxy, tert-butoxy, pentyloxy, hexyloxy, heptyloxy, octyloxy; hydroxyl; sulfur Alcohol group; nitro group; cyano group; amine group; azo; Dialkylamine; Diphenylamine, carbazolyl and other amine groups; Acetyl, propionyl, butyryl and other acyl groups; vinyl, 1-propenyl, allyl, butenyl, styrene alkenyl with 2 to 20 carbon atoms such as base; alkynyl with 2 to 20 carbon atoms such as ethynyl, 1-propynyl, propargyl, and phenylethynyl; alkenyl groups such as vinyloxy and allyloxy; Acetyloxy, phenylacetyloxy and other alkynyloxy groups; phenoxy, naphthyloxy, biphenyloxy, pyreneoxy and other aryloxy groups; trifluoromethyl, trifluoromethoxy, pentafluoroethyl Oxygen, perfluorophenyl and other perfluoro groups and longer-chain perfluoro groups; diphenylboron, dimesitylboron, bis(perfluorophenyl)boron, 4,4,5, Boronyl such as 5-tetramethyl-1,3,2-dioxaborolyl; carbonyl such as acetyl and benzyl; carbonyloxy such as acetyloxy and benzyloxy; methoxycarbonyl, ethoxycarbonyl, phenoxycarbonyl and other alkoxycarbonyl groups; methylsulfinyl, phenylsulfinyl and other sulfinyl groups; methylsulfonyl, phenylsulfonyl Isosulfonyl; alkylsulfonyloxy; arylsulfonyloxy; phosphino; Silyl group, dimethyl tert-butylsilyl group, trimethoxysilyl group, triphenylsilyl group, etc. Silyl group; Silyloxy group; stannyl group; can be substituted by halogen atom or alkyl group, alkoxy group, etc. phenyl, 2,6-xylyl, mesityl, 2,3,5,6-tetramethylphenyl (duryl), biphenyl, terphenyl, naphthyl, anthracenyl, pyrenyl, toluene Carboxylic, anisyl, fluorophenyl, diphenylaminophenyl, dimethylaminophenyl, diethylaminophenyl, phenanthryl and other aryl groups (aromatic hydrocarbons that may be substituted) cyclyl); thienyl, furanyl, silacyclopentadienyl, oxazolyl, oxadiazolyl, thiazolyl, thiadiazolyl, acridine which may be substituted by halogen atoms or alkyl, alkoxy, etc. Peridyl, quinolinyl, quinoxolinyl, phenanthroline, benzothienyl, benzothiazolyl, indolyl, carbazolyl, pyridyl, pyrrolyl, benzoxazolyl, pyrimidinyl, imidazole Heterocyclic group (aromatic heterocyclic group which may be substituted); carboxyl group; carboxylate; epoxy group; isocyano group; cyanate group; isocyanate group; thiocyanate group; isothiocyanate base; aminocarboxy; N,N-dimethylaminocarboxy, N,N- Diethylamine carboxyl, etc. N,N-dialkylamine carboxyl; carboxyl; nitroso; carboxyloxy and the like. Furthermore, it may be substituted with a halogen atom, an alkyl group, an aryl group, or the like. Furthermore, these groups may be bonded to each other at arbitrary positions to form a ring. Among them, the monovalent organic group of R 9 is preferably a methyl group, an ethyl group, a phenyl group, an n-propyl group, an isopropyl group, and an isobutyl group.

所述通式(9-1)中的m為3~10的整數,但自與氫的相互作用的強度的觀點出發,較佳為3~8,更佳為3~6。m in the general formula (9-1) is an integer of 3 to 10, but from the viewpoint of the strength of interaction with hydrogen, it is preferably 3 to 8, more preferably 3 to 6.

所述通式(9-1)中的n相同或不同,可取0或1的整數。即,例如,在環狀吡啶系化合物為具有6個吡啶環的化合物的情況下,結構中存在的6個n的可取整數為自[i](0,0,0,0,0)至[xii](1,1,1,1,1,1)的組合,由於是環狀結構,因此其他可為[ii](1,0,0,0,0,0)、[iii](1,1,0,0,0,0)、[iv](1,0,1,0,0,0)、[v](1,0,0,1,0,0)、[vi](1,1,1,0,0,0)、[vii](1,1,0,1,0,0)、[viii](0,0,1,1,1,1)、[ix](0,1,0,1,1,1)、[x](0,1,1,0,1,1)、[xi](0,1,1,1,1,1),容許合計12組。而且所有該些都是候補。其中,較佳為該些中6個或3個為1的所述[vi]、[vii]、[xii]。更佳為n中的1的數與m相同的[xii]。即,作為所述環狀吡啶系化合物,在通式(9-1)所示的化合物中,較佳為通式(9-1)中的n全部為1的氮雜杯吡啶衍生物。n in the general formula (9-1) may be the same or different, and may take an integer of 0 or 1. That is, for example, in the case where the cyclic pyridine-based compound is a compound having 6 pyridine rings, the possible integers of 6 n existing in the structure are from [i](0,0,0,0,0) to [ The combination of xii](1,1,1,1,1,1), since it is a cyclic structure, the others can be [ii](1,0,0,0,0,0), [iii](1 ,1,0,0,0,0), [iv](1,0,1,0,0,0), [v](1,0,0,1,0,0), [vi]( 1,1,1,0,0,0), [vii](1,1,0,1,0,0), [viii](0,0,1,1,1,1), [ix] (0,1,0,1,1,1), [x](0,1,1,0,1,1), [xi](0,1,1,1,1,1), total allowed 12 groups. And all of those are alternates. Among them, the above-mentioned [vi], [vii], and [xii] in which 6 or 3 of these are 1 are preferable. More preferably, the number of 1 in n is the same as m [xii]. That is, as the cyclic pyridine-based compound, among the compounds represented by the general formula (9-1), an azacalipyridine derivative in which all of n in the general formula (9-1) are 1 is preferable.

作為具有所述通式(9-1)表示的結構的環狀吡啶系化合物,較佳為下述通式(9-2)~(9-5)表示的化合物。再者,通式(9-2)~(9-5)中的R9 與通式(9-1)中的R9 同義。The cyclic pyridine-based compound having the structure represented by the general formula (9-1) is preferably a compound represented by the following general formulae (9-2) to (9-5). In addition, R 9 in general formula (9-2) - (9-5) is synonymous with R 9 in general formula (9-1).

[化15]

Figure 02_image017
[Chemical 15]
Figure 02_image017

作為所述環狀吡啶系化合物,亦較佳為所述通式(9-1)中的吡啶環的對位的氫原子經1價有機基取代的化合物,此處,作為1價有機基,同樣可列舉出R9 中的1價有機基。並且,該1價有機基中,較佳為雜環基,特佳為吡咯啶基。The cyclic pyridine-based compound is also preferably a compound in which the para-position hydrogen atom of the pyridine ring in the general formula (9-1) is substituted with a monovalent organic group. Here, as the monovalent organic group, Similarly, the monovalent organic group in R 9 can be mentioned. In addition, among the monovalent organic groups, a heterocyclic group is preferable, and a pyrrolidinyl group is particularly preferable.

作為所述環狀吡啶系化合物的具體例,例如可列舉下述結構式(9-6)~(9-7)表示的化合物等。 [化16]

Figure 02_image018
Specific examples of the cyclic pyridine-based compound include compounds represented by the following structural formulae (9-6) to (9-7), and the like. [Chemical 16]
Figure 02_image018

[摻雜劑層] 所述摻雜劑層3僅由所述電子接受性材料或所述電子給予性材料構成。此處,作為電子接受性材料,可使用在「p-摻雜層」項中說明的各種材料。另外,作為電子給予性材料,可使用在「n-摻雜層」項中說明的各種材料。[Dopant Layer] The dopant layer 3 is composed of only the electron-accepting material or the electron-donating material. Here, as the electron-accepting material, various materials described in the section "p-doped layer" can be used. In addition, as the electron-donating material, various materials described in the section "n-doped layer" can be used.

本實施方式的電荷產生層的特徵在於,不含鹼金屬、金屬氧化物。再者,本實施方式的電荷產生層由於不含鹼金屬,因此亦不包含所述含有鹼金屬的錯合物。本實施方式的電荷產生層由於不含該些材料,故可藉由共蒸鍍來製造,即使在氧或水分的存在下亦不易劣化。The charge generating layer of the present embodiment is characterized by not containing alkali metal or metal oxide. In addition, since the charge generation layer of this embodiment does not contain an alkali metal, it does not contain the complex compound containing the alkali metal. Since the charge generation layer of the present embodiment does not contain these materials, it can be produced by co-evaporation, and is not easily deteriorated even in the presence of oxygen or moisture.

<電荷產生層的製造方法> 本發明的電荷產生層的製造方法是製造所述電荷產生層的方法,包括: 步驟A,共蒸鍍電洞傳輸性材料及電子接受性材料,形成包含電洞傳輸性材料及電子接受性材料的層(p-摻雜層)1;以及 步驟B,共蒸鍍電子傳輸性材料及電子給予性材料,形成包含電子傳輸性材料及電子給予性材料的層(n-摻雜層)2。 另外,根據需要,本發明的電荷產生層的製造方法亦可包括步驟C,所述步驟C中,僅蒸鍍電子接受性材料或僅蒸鍍電子給予性材料,形成僅包含電子接受性材料的層或僅包含電子給予性材料的層(摻雜劑層)3。 所述步驟A及所述步驟B的順序沒有特別限定,可根據目標器件結構來適當選擇。另外,所述步驟C較佳為在所述步驟A與所述步驟B之間進行。<Manufacturing method of charge generating layer> The manufacturing method of the charge generation layer of the present invention is a method of manufacturing the charge generation layer, comprising: Step A, co-evaporating the hole transport material and the electron accepting material to form a layer (p-doped layer) 1 including the hole transport material and the electron accepting material; and Step B, co-evaporating the electron-transporting material and the electron-donating material to form a layer (n-doped layer) 2 including the electron-transporting material and the electron-donating material. In addition, as required, the method for producing a charge generating layer of the present invention may also include step C, in which step C is performed by vapor-depositing only the electron-accepting material or only the electron-donating material to form a material containing only the electron-accepting material. layer or a layer containing only electron donating material (dopant layer) 3 . The sequence of the step A and the step B is not particularly limited, and can be appropriately selected according to the structure of the target device. In addition, the step C is preferably performed between the step A and the step B.

作為本發明的電荷產生層的製造方法中使用的電洞傳輸性材料、電子接受性材料、電子傳輸性材料、電子給予性材料,可使用<電荷產生層>項中說明的各材料。另外,在所述共蒸鍍及所述蒸鍍中,可利用通常的真空蒸鍍裝置。 根據本發明的電荷產生層的製造方法,藉由共蒸鍍,形成p-摻雜層1及n-摻雜層2,因此能夠以少的步驟數有效率地製造電荷產生層10。As the hole-transporting material, electron-accepting material, electron-transporting material, and electron-donating material used in the method for producing the charge-generating layer of the present invention, each material described in the section <Charge-generating layer> can be used. In addition, in the said co-evaporation and said vapor deposition, a normal vacuum vapor deposition apparatus can be used. According to the manufacturing method of the charge generation layer of the present invention, since the p-doped layer 1 and the n-doped layer 2 are formed by co-evaporation, the charge generation layer 10 can be efficiently manufactured with a small number of steps.

<有機EL元件> 接著,參照附圖詳細說明本發明的有機電激發光元件的實施方式。 圖5~圖10是用於說明本發明的有機EL元件的實施方式的剖面示意圖。<Organic EL element> Next, embodiments of the organic electroluminescent element of the present invention will be described in detail with reference to the accompanying drawings. 5 to 10 are schematic cross-sectional views for explaining embodiments of the organic EL element of the present invention.

圖5及圖6所示的有機EL元件100依次包括陰極30、發光層60、陽極90,進而,在陰極30與發光層60之間包括電荷產生層10。 圖5所示的有機EL元件100在基板20上依次形成陰極30、電荷產生層10、發光層60、電洞傳輸層70及陽極90,是所謂的反向結構的有機EL元件。 另一方面,圖6所示的有機EL元件100在基板20上依次形成陽極90、電洞傳輸層70、發光層60、電荷產生層10及陰極30,是所謂正向結構的有機EL元件。 圖5及圖6所示的有機EL元件100中,均為電荷產生層10內的p-摻雜層1配置在陰極30側,另外,電荷產生層10內的n-摻雜層2配置在發光層60側。所述結構的有機EL元件100容易製造,即使在氧或水分的存在下亦不易劣化。The organic EL element 100 shown in FIGS. 5 and 6 includes a cathode 30 , a light-emitting layer 60 , and an anode 90 in this order, and further includes a charge generating layer 10 between the cathode 30 and the light-emitting layer 60 . The organic EL element 100 shown in FIG. 5 has a cathode 30 , a charge generation layer 10 , a light-emitting layer 60 , a hole transport layer 70 , and an anode 90 formed in this order on a substrate 20 , and is a so-called reverse structure organic EL element. On the other hand, the organic EL element 100 shown in FIG. 6 has an anode 90 , a hole transport layer 70 , a light-emitting layer 60 , a charge generation layer 10 and a cathode 30 formed in this order on the substrate 20 , and is a so-called forward structure organic EL element. In the organic EL elements 100 shown in FIGS. 5 and 6 , the p-doped layer 1 in the charge generation layer 10 is arranged on the cathode 30 side, and the n-doped layer 2 in the charge generation layer 10 is arranged on the side of the cathode 30 . The light-emitting layer 60 side. The organic EL element 100 of the above-described structure is easy to manufacture, and hardly deteriorates even in the presence of oxygen or moisture.

圖7及圖8所示的有機EL元件100依次包括陰極30、發光層60、陽極90,並且,在陽極90和發光層60之間包括電荷產生層10。 圖7所示的有機EL元件100在基板20上依次形成陰極30、電子傳輸層45、發光層60、電荷產生層10及陽極90,是所謂的反向結構的有機EL元件。 另一方面,圖8所示的有機EL元件100在基板20上依次形成有陽極90、電荷產生層10、發光層60、電子傳輸層45及陰極30,是所謂正向結構的有機EL元件。 圖7及圖8所示的有機EL元件100中,均為電荷產生層10內的p-摻雜層1配置在發光層60側,另外,電荷產生層10內的n-摻雜層2配置在陽極90側。所述結構的有機EL元件100亦容易製造並且即使在氧或水分的存在下亦不易劣化。The organic EL element 100 shown in FIGS. 7 and 8 includes a cathode 30 , a light-emitting layer 60 , and an anode 90 in this order, and includes a charge generating layer 10 between the anode 90 and the light-emitting layer 60 . The organic EL element 100 shown in FIG. 7 has a cathode 30 , an electron transport layer 45 , a light-emitting layer 60 , a charge generation layer 10 , and an anode 90 formed in this order on a substrate 20 , and is a so-called reverse structure organic EL element. On the other hand, the organic EL element 100 shown in FIG. 8 has an anode 90 , a charge generation layer 10 , a light-emitting layer 60 , an electron transport layer 45 , and a cathode 30 formed in this order on the substrate 20 , and is a so-called forward structure organic EL element. In the organic EL elements 100 shown in FIGS. 7 and 8 , the p-doped layer 1 in the charge generation layer 10 is arranged on the light-emitting layer 60 side, and the n-doped layer 2 in the charge generation layer 10 is arranged on the anode 90 side. The organic EL element 100 of the structure is also easy to manufacture and does not easily deteriorate even in the presence of oxygen or moisture.

圖9所示的有機EL元件100在基板20上依次形成電極39、電荷傳輸層57、發光層60、電荷產生層10、發光層60、電荷傳輸層57及電極39,具有包括兩層發光層60的串聯結構。 另外,圖10所示的有機EL元件100在基板20上依次形成電極39、電荷傳輸層57、發光層60、電荷產生層10、發光層60、電荷產生層10、發光層60、電荷傳輸層57及電極39,具有包括三層發光層60的串聯結構。 再者,本發明的有機EL元件亦可採取具有四層以上發光層的串聯結構。In the organic EL element 100 shown in FIG. 9, an electrode 39, a charge transport layer 57, a light-emitting layer 60, a charge generation layer 10, a light-emitting layer 60, a charge transport layer 57, and an electrode 39 are sequentially formed on the substrate 20, and has two layers of light-emitting layers. 60 series structure. In the organic EL element 100 shown in FIG. 10 , the electrode 39 , the charge transport layer 57 , the light emitting layer 60 , the charge generation layer 10 , the light emitting layer 60 , the charge generation layer 10 , the light emitting layer 60 , and the charge transport layer are sequentially formed on the substrate 20 . 57 and the electrode 39 have a tandem structure including three light-emitting layers 60 . Furthermore, the organic EL element of the present invention may have a tandem structure having four or more light-emitting layers.

此處,在圖9及圖10所示的有機EL元件100中,電極39可為陰極,亦可為陽極,另外,電荷傳輸層57可為電子傳輸層,亦可為電洞傳輸層,在一個電極39為陰極的情況下,另一個電極39為陽極。另外,與作為陰極的電極39鄰接的電荷傳輸層57通常是電子傳輸層,與作為陽極的電極39鄰接的電荷傳輸層57通常是電洞傳輸層,但如後述的圖11所示,陰極側的電荷傳輸層亦可為電洞傳輸層。 圖9及圖10所示的有機EL元件100是具有2個電極39(陰極與陽極),在2個電極39(陰極與陽極)之間具有2層以上的發光層60的有機EL元件,且在發光層60內的一層與發光層60內的另一層之間具有電荷產生層10。所述結構的有機EL元件100亦容易製造並且即使在氧或水分的存在下亦不易劣化。此外,所述結構的有機EL元件100的電流效率高並且壽命長。Here, in the organic EL element 100 shown in FIGS. 9 and 10, the electrode 39 may be a cathode or an anode, and the charge transport layer 57 may be an electron transport layer or a hole transport layer. When one electrode 39 is a cathode, the other electrode 39 is an anode. In addition, the charge transport layer 57 adjacent to the electrode 39 serving as a cathode is usually an electron transport layer, and the charge transport layer 57 adjacent to the electrode 39 serving as an anode is usually a hole transport layer, but as shown in FIG. 11 described later, the cathode side The charge transport layer can also be a hole transport layer. The organic EL element 100 shown in FIGS. 9 and 10 is an organic EL element having two electrodes 39 (cathode and anode) and two or more light-emitting layers 60 between the two electrodes 39 (cathode and anode), and The charge generation layer 10 is provided between one layer within the light emitting layer 60 and another layer within the light emitting layer 60 . The organic EL element 100 of the structure is also easy to manufacture and does not easily deteriorate even in the presence of oxygen or moisture. In addition, the organic EL element 100 of the structure has high current efficiency and long life.

圖11是用於說明本發明的有機EL元件的一例的概略剖面圖。 圖11所示的本實施方式的有機EL元件100在陰極30與陽極90之間具有發光層60。另外,圖11所示的有機EL元件100在陰極30與發光層60之間具有包含所述有機材料的電荷產生層10。11 is a schematic cross-sectional view for explaining an example of the organic EL element of the present invention. The organic EL element 100 of this embodiment shown in FIG. 11 has the light-emitting layer 60 between the cathode 30 and the anode 90 . In addition, the organic EL element 100 shown in FIG. 11 has the charge generation layer 10 including the organic material between the cathode 30 and the light-emitting layer 60 .

本實施方式的有機EL元件100具有在基板20上依次形成有陰極30、塗佈中間層40、電洞傳輸層50、包含電洞傳輸性材料及電子接受性材料的層(p-摻雜層)1、包含電子傳輸性材料及電子給予性材料的層(n-摻雜層)2、發光層60、電洞傳輸層70、電洞注入層80、及陽極90的積層結構。另外,在圖11中,在p-摻雜層1與n-摻雜層2之間配置有僅包含電子接受性材料或電子給予性材料的層(摻雜劑層)3。另外,可在電荷產生層10與發光層60之間積層僅包含電子傳輸性材料的層。The organic EL element 100 of the present embodiment has a cathode 30 , a coating intermediate layer 40 , a hole transport layer 50 , a layer containing a hole transport material and an electron accepting material (p-doped layer) formed in this order on the substrate 20 ) 1. Layer (n-doped layer) 2, light-emitting layer 60, hole-transporting layer 70, hole-injecting layer 80, and anode 90 comprising an electron-transporting material and an electron-donating material. In addition, in FIG. 11 , a layer (dopant layer) 3 containing only an electron-accepting material or an electron-donating material is arranged between the p-doped layer 1 and the n-doped layer 2 . In addition, a layer containing only an electron transport material may be laminated between the charge generation layer 10 and the light emitting layer 60 .

圖11所示的有機EL元件100是在基板20與發光層60之間配置有陰極30的反向結構的有機EL元件。圖11所示的有機EL元件100可為在與基板20的相反側提取光的頂部發光型元件,亦可為在基板20側提取光的底部發光型元件。 在本實施例中,以反向結構的有機EL元件為例進行了說明,但本發明的有機EL元件亦可為圖5~圖10中記載的任意結構。The organic EL element 100 shown in FIG. 11 is an organic EL element of a reverse structure in which the cathode 30 is arranged between the substrate 20 and the light-emitting layer 60 . The organic EL element 100 shown in FIG. 11 may be a top emission type element that extracts light on the side opposite to the substrate 20 or a bottom emission type element that extracts light on the substrate 20 side. In this embodiment, the organic EL element of the reverse structure is described as an example, but the organic EL element of the present invention may have any of the structures described in FIGS. 5 to 10 .

「基板」 作為基板20的材料,可列舉樹脂材料、玻璃材料、纖維素等。作為基板20中使用的樹脂材料,可列舉:聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚丙烯、環烯烴聚合物、聚醯胺、聚醚碸、聚甲基丙烯酸甲酯、聚碳酸酯、聚芳酯等。在使用樹脂材料作為基板20的材料的情況下,由於可獲得柔軟性優異的有機EL元件100,因此較佳。另一方面作為用於基板20的玻璃材料,可列舉石英玻璃、鈉玻璃等。"Substrate" As a material of the substrate 20, a resin material, a glass material, cellulose, etc. are mentioned. Examples of the resin material used for the substrate 20 include polyethylene terephthalate, polyethylene naphthalate, polypropylene, cycloolefin polymer, polyamide, polyether, and polymethyl methacrylate. Ester, polycarbonate, polyarylate, etc. When a resin material is used as the material of the substrate 20 , it is preferable because the organic EL element 100 excellent in flexibility can be obtained. On the other hand, as a glass material used for the substrate 20, quartz glass, soda glass, etc. are mentioned.

當有機EL元件100是底部發光型元件時,使用透明基板作為基板20的材料。另一方面,當有機EL元件100是頂部發光型元件時,不僅可使用透明基板,亦可使用不透明基板作為基板20的材料。作為不透明基板,例如可列舉:由氧化鋁之類的陶瓷材料構成的基板、在不鏽鋼之類的金屬板的表面形成有氧化膜(絕緣膜)的基板、由樹脂材料構成的基板等。When the organic EL element 100 is a bottom emission type element, a transparent substrate is used as the material of the substrate 20 . On the other hand, when the organic EL element 100 is a top emission type element, not only a transparent substrate but also an opaque substrate can be used as the material of the substrate 20 . Examples of the opaque substrate include a substrate made of a ceramic material such as alumina, a substrate in which an oxide film (insulating film) is formed on the surface of a metal plate such as stainless steel, and a substrate made of a resin material.

基板20的平均厚度可根據基板20的材料等決定,較佳為0.1 mm~30 mm,更佳為0.1 mm~10 mm。再者,基板20的平均厚度可藉由數位萬用表、遊標卡尺來測定。The average thickness of the substrate 20 may be determined according to the material of the substrate 20 and the like, and is preferably 0.1 mm to 30 mm, more preferably 0.1 mm to 10 mm. Furthermore, the average thickness of the substrate 20 can be measured by a digital multimeter or a vernier caliper.

「陰極」 陰極30以直接接觸的形式形成在基板20上。作為陰極30的材料,在為底部發光型元件的情況下,較佳為作為透明電極的銦氧化錫(Indium Tin Oxide,ITO)、銦氧化鋅(Indium Zinc Oxide,IZO)、氟氧化錫(Fluorine Tin Oxide,FTO)、In3 O3 、SnO2 、含Sb的SnO2 、含Al的ZnO等氧化物的導電材料,電子在電荷產生層10中生成,因此可不僅使用金屬氧化物,亦可使用金屬、有機導電薄膜、碳奈米管、石墨烯等任意的材料。"Cathode" The cathode 30 is formed on the substrate 20 in direct contact. As the material of the cathode 30, in the case of a bottom emission type element, indium tin oxide (Indium Tin Oxide, ITO), Indium Zinc Oxide (IZO), tin fluoride (Fluorine Oxide, IZO), which are transparent electrodes, are preferable. Tin Oxide (FTO), In 3 O 3 , SnO 2 , Sb-containing SnO 2 , Al-containing ZnO and other oxide conductive materials, electrons are generated in the charge generating layer 10 , so not only metal oxides but also metal oxides can be used. Any material such as metal, organic conductive film, carbon nanotube, and graphene can be used.

陰極30的平均厚度沒有特別限制,但較佳為10 nm~500 nm,更佳為100 nm~200 nm。再者,陰極30的平均厚度可藉由觸針式輪廓儀、分光橢圓偏光儀測定。The average thickness of the cathode 30 is not particularly limited, but is preferably 10 nm to 500 nm, more preferably 100 nm to 200 nm. Furthermore, the average thickness of the cathode 30 can be measured by a stylus profiler or a spectroscopic ellipsometry.

「塗佈中間層」 在圖11所示的有機EL元件100中,為了抑制洩漏,在陰極30上設置有塗佈中間層40。藉由設置塗佈中間層40,能夠抑制因微粒等引起的電流洩漏(短路)。塗佈中間層40可使用聚(3,4-亞乙二氧基噻吩/苯乙烯磺酸)(PEDOT/PSS)等導電性高的高分子材料,例如可使用賀利式(Heraeus)公司製造的「克萊維斯(Clevios)HIL1.3」。塗佈中間層40的厚度較佳為幾十nm左右,更佳為10 nm~90 nm。塗佈中間層40例如可藉由旋塗法成膜。"Coating Intermediate Layer" In the organic EL element 100 shown in FIG. 11 , in order to suppress leakage, a coating intermediate layer 40 is provided on the cathode 30 . By providing the coating intermediate layer 40, current leakage (short circuit) due to particles and the like can be suppressed. The coating intermediate layer 40 can be made of a high-conductivity polymer material such as poly(3,4-ethylenedioxythiophene/styrenesulfonic acid) (PEDOT/PSS), for example, manufactured by Heraeus "Clevios HIL1.3". The thickness of the coating intermediate layer 40 is preferably about several tens of nm, more preferably 10 nm˜90 nm. The coating intermediate layer 40 can be formed into a film by spin coating, for example.

「電洞輸送層」 在圖11所示的有機EL元件100中,雖然對直接的電荷產生沒有貢獻,但是在塗佈中間層40上設置有電洞輸送層50。為了避免添加到p-摻雜層1中的電子接受性材料與陰極30的相互作用,較佳為具有電洞傳輸層50。再者,電洞傳輸層50可使用所述p-摻雜層1中使用的電洞傳輸性材料、或後述的電洞傳輸層70中使用的材料。"Electric hole transport layer" In the organic EL element 100 shown in FIG. 11 , the hole transport layer 50 is provided on the coating intermediate layer 40 although it does not contribute to direct charge generation. In order to avoid interaction of the electron-accepting material added to the p-doped layer 1 with the cathode 30 , it is preferable to have the hole transport layer 50 . In addition, the hole transport material used for the p-doped layer 1 described above or the material used for the hole transport layer 70 described later can be used for the hole transport layer 50 .

「電荷產生層」 如上所述,電荷產生層10包括:包含電洞傳輸性材料及電子接受性材料的層(p-摻雜層)1;以及包含電子傳輸性材料及電子給予性材料的層(n-摻雜層)2。再者,本實施方式中,p-摻雜層1與n-摻雜層2經由摻雜劑層3積層,但是摻雜劑層3可設置,亦可不設置。"Charge Generation Layer" As described above, the charge generation layer 10 includes: the layer (p-doped layer) 1 including the hole transport material and the electron accepting material; and the layer (n-doped layer) including the electron transport material and the electron donating material layer) 2. Furthermore, in this embodiment, the p-doped layer 1 and the n-doped layer 2 are laminated via the dopant layer 3, but the dopant layer 3 may or may not be provided.

「發光層」 作為形成發光層60的材料,可使用通常可用作發光層的材料的任意材料,亦可混合使用多種材料。例如,在較佳方式中,作為發光層60,可設為包含雙[2-(2-苯並噻唑基)苯酚]鋅(II)(Zn(BTZ)2 )、及三[1-苯基異喹啉]銥(III)(Ir(piq)3 )。 另外,形成發光層60的材料可為低分子化合物,亦可為高分子化合物。再者,在本發明中,低分子材料是指並非高分子材料(聚合物)的材料,並非一定是指分子量低的有機化合物。"Light-emitting layer" As a material for forming the light-emitting layer 60, any material that can be generally used as a material for a light-emitting layer may be used, or a plurality of materials may be mixed and used. For example, in a preferred embodiment, as the light-emitting layer 60, bis[2-(2-benzothiazolyl)phenol]zinc(II) (Zn(BTZ) 2 ) and tris[1-phenyl Isoquinoline]iridium(III) (Ir(piq) 3 ). In addition, the material for forming the light-emitting layer 60 may be a low molecular compound or a high molecular compound. In addition, in the present invention, the low molecular weight material refers to a material that is not a high molecular material (polymer), and does not necessarily mean an organic compound with a low molecular weight.

作為形成發光層60的高分子材料,例如可列舉:反型聚乙炔、順型聚乙炔、聚(二苯乙炔)(Poly(di-Phenylacetylene),PDPA)、聚(烷基苯乙炔)(Poly(alkyl Phenylacetylene),PAPA)等聚乙炔系化合物;聚(對苯乙炔)(poly(para-phenylene vinylene),PPV)、聚(2,5-二烷氧基-對苯乙炔)(RO-PPV)、氰基-取代-聚(對苯乙炔)(cyano-poly(para-phenylene vinylene),CN-PPV)、聚(2-二甲基辛基矽烷基-對苯乙炔)(DMOS-PPV)、聚(2-甲氧基,5-(2'-乙基己氧基)對苯乙炔)(MEH-PPV)等聚對苯乙炔系化合物;聚(3-烷基噻吩)(Ploy(3-alkyl thiophene),PAT)、聚(氧基丙烯)三醇(Poly(oxy propylene)triol,POPT)等聚噻吩系化合物;聚(9,9-二烷基芴)(PDAF)、聚(二辛基芴-交替-苯並噻二唑)(F8BT)、α,ω-雙[N,N'-二(甲基苯基)胺基苯基]-聚[9,9-雙(2-乙基己基)芴-2,7-二基](PF2/6am4)、聚(9,9-二辛基-2,7-二伸乙烯基芴基-交替-共聚(蒽-9,10-二基))等聚芴系化合物;聚(對苯)(Poly(para-phenylene),PPP)、聚(1,5-二烷氧基對苯)(RO-PPP)等聚對苯系化合物;聚(N-乙烯基咔唑)(PVK)等聚咔唑系化合物;聚(甲基苯基矽烷)(Ploy(methyl phenyl silane),PMPS)、聚(萘基苯基矽烷)(Poly(naphthyl phenyl silane),PNPS)、聚(聯苯基苯基矽烷)(Poly(biphenylyl phenyl silane),PBPS)等聚矽烷系化合物;進而可列舉日本專利特開2011-184430號公報、日本專利特開2012-151148號公報中記載的硼化合物系高分子材料等。Examples of polymer materials that form the light-emitting layer 60 include trans-polyacetylene, cis-polyacetylene, poly(di-Phenylacetylene) (PDPA), poly(alkylphenylacetylene) (Poly(alkylphenylacetylene) (alkyl Phenylacetylene), PAPA) and other polyacetylene compounds; poly(para-phenylene vinylene) (PPV), poly(2,5-dialkoxy-p-phenylene vinylene) (RO-PPV) ), cyano-substituted-poly(p-phenylene vinylene) (cyano-poly(para-phenylene vinylene), CN-PPV), poly(2-dimethyloctylsilyl-p-phenylene vinylene) (DMOS-PPV) , poly(2-methoxy, 5-(2'-ethylhexyloxy)-p-phenylene vinylene) (MEH-PPV) and other poly-p-phenylene vinylene compounds; poly(3-alkylthiophene) (Ploy (3 -alkyl thiophene), PAT), poly(oxy propylene) triol (Poly(oxy propylene) triol, POPT) and other polythiophene compounds; Octylfluorene-alternating-benzothiadiazole) (F8BT), α,ω-bis[N,N'-bis(methylphenyl)aminophenyl]-poly[9,9-bis(2- Ethylhexyl)fluorene-2,7-diyl] (PF2/6am4), poly(9,9-dioctyl-2,7-divinylfluorenyl-alternating-copoly(anthracene-9,10-) Diyl)) and other polyfluorene compounds; poly (para-phenylene) (Poly (para-phenylene), PPP), poly (1,5-dialkoxy-para-phenylene) (RO-PPP) and other poly-para-phenylene compounds ; Poly(N-vinylcarbazole) (PVK) and other polycarbazole-based compounds; Poly(methyl phenyl silane) (Poly(methyl phenyl silane), PMPS), naphthyl phenyl silane), PNPS), poly(biphenylyl phenyl silane) (Poly(biphenylyl phenyl silane), PBPS) and other polysilane-based compounds; further can include Japanese Patent Laid-Open No. 2011-184430, Japanese Patent Laid-Open No. 2011-184430 The boron compound-based polymer material and the like described in Gazette 2012-151148.

作為形成發光層60的低分子材料,例如可舉出具有2,2'-聯吡啶-4,4'-二羧酸作為配位基的三配位的銥錯合物、面式三(2-苯基吡啶)銥(Ir(ppy)3 )、三(8-羥基喹啉)鋁(Alq3 )、三(4-甲基-8-羥基喹啉)鋁(III)(Almq3 )、8-羥基喹啉鋅(Znq2 )、(1,10-啡啉)-三-(4,4,4-三氟-1-(2-噻吩基)-1,3,-丁二酮)銪(III)(Eu(TTA)3 (phen))、2,3,7,8,12,13,17,18-八乙基-21H,23H—卟吩鉑(II)等各種金屬錯合物;二苯乙烯基苯(Di styryl benzenes,DSB)、二胺基二苯乙烯基苯(Di Amino Di styryl benzenes,DADSB)等苯系化合物;萘、尼羅紅等萘系化合物;菲等菲系化合物;1,2-苯並菲(chrysene)、6-硝基聯苯(6-mtrochrysene)等1,2-苯並菲糸化合物;苝、N,N'-雙(2,5-二-第三丁基苯基)-3,4,9,10-苝-二羧醯亞胺(BPPC)等苝系化合物;蔻等蔻系化合物;蒽、雙苯乙烯基蒽等蒽系化合物;芘等芘系化合物;4-(二氰基亞甲基)-2-甲基-6-(對二甲胺基苯乙烯基)-4H-吡喃(DCM)等吡喃系化合物;吖啶等吖啶系化合物;芪等芪系化合物;2,5-二苯並噁唑噻吩等噻吩系化合物;苯並噁唑等苯並噁唑系化合物;苯並咪唑等笨並咪唑系化合物;2,2'-(對伸苯基二伸乙烯基)-雙苯並噻唑等苯並噻唑系化合物;聯苯乙烯基(1,4-二苯基-1,3-丁二烯)、四苯基丁二烯等丁二烯系化合物;萘二甲醯亞胺等萘二甲醯亞胺系化合物;香豆素等香豆素系化合物;紫環酮等紫環酮系化合物;噁二唑等噁二唑系化合物;醛連氮系化合物;1,2,3,4,5-五苯基-1,3-環戊二烯(PPCP)等環戊二烯系化合物;喹吖啶酮、喹吖啶酮紅等喹吖啶酮系化合物;吡咯並吡啶、噻二唑並吡啶等吡啶系化合物;2,2',7,7'-四苯基-9,9'-螺二芴等螺環化合物;酞菁(H2 Pc)、酞菁銅等金屬或無金屬等酞菁系化合物;進而可列舉日本專利特開2009-155325號公報、日本專利特開2011-184430號公報及日本專利特2012-151149號公報中記載的硼化合物材料等。As the low molecular weight material forming the light-emitting layer 60, for example, a tri-coordinate iridium complex having - Phenylpyridine) iridium (Ir(ppy) 3 ), tris(8-hydroxyquinoline) aluminum (Alq 3 ), tris(4-methyl-8-hydroxyquinoline) aluminum (III) (Almq 3 ), Zinc 8-hydroxyquinoline (Znq 2 ), (1,10-phenanthroline)-tris-(4,4,4-trifluoro-1-(2-thienyl)-1,3,-butanedione) Various metal complexes such as europium (III) (Eu(TTA) 3 (phen)), 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphine platinum (II) benzene-based compounds such as Distyryl benzenes (DSB) and Di Amino Distyryl benzenes (DADSB); naphthalene-based compounds such as naphthalene and Nile red; phenanthrenes such as phenanthrene Series compounds; 1,2-triphenylene compounds such as 1,2-triphenylene (chrysene) and 6-nitrobiphenyl (6-mtrochrysene); perylene, N,N'-bis(2,5-diphenylene) - tertiary butylphenyl)-3,4,9,10-perylene-dicarboxyimide (BPPC) and other perylene compounds; coronine and other perylene compounds; anthracene, bis-styryl anthracene and other anthracene compounds; Pyrene series compounds such as pyrene; pyran series compounds such as 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM); acridine Isoacridine series compounds; Stilbene series compounds such as stilbene; Thiophene series compounds such as 2,5-dibenzoxazole thiophene; Benzoxazole series compounds such as benzoxazole; Benzimidazole series compounds such as benzimidazole; 2 ,2'-(p-phenylene vinylene)-bisbenzothiazole and other benzothiazole-based compounds; distyryl (1,4-diphenyl-1,3-butadiene), tetraphenyl Butadiene-based compounds such as butadiene; naphthalene-based compounds such as naphthalimide; coumarin-based compounds such as coumarin; perone-based compounds such as perone; oxadiazoles oxadiazole-based compounds; aldazine-based compounds; cyclopentadiene-based compounds such as 1,2,3,4,5-pentaphenyl-1,3-cyclopentadiene (PPCP); quinacridone , quinacridone red and other quinacridone compounds; pyrrolopyridine, thiadiazolopyridine and other pyridine compounds; 2,2',7,7'-tetraphenyl-9,9'-spirobifluorene and other spiro compounds; phthalocyanine compounds such as metals such as phthalocyanine (H 2 Pc) and copper phthalocyanine, or metal-free phthalocyanine compounds; further, Japanese Patent Laid-Open No. 2009-155325, Japanese Patent Laid-Open No. 2011-184430, and The boron compound material and the like described in Japanese Patent Laid-Open No. 2012-151149.

發光層60的平均厚度沒有特別限定,但較佳為10 nm~150 nm,更佳為20 nm~100 nm。再者,發光層60的平均厚度可藉由觸針式輪廓儀進行測定,亦可藉由晶體振子膜厚計在發光層60的成膜時進行測定。The average thickness of the light-emitting layer 60 is not particularly limited, but is preferably 10 nm to 150 nm, more preferably 20 nm to 100 nm. In addition, the average thickness of the light-emitting layer 60 may be measured by a stylus profiler, or may be measured by a crystal oscillator film thickness meter at the time of film formation of the light-emitting layer 60 .

「電洞輸送層」 作為用於電洞傳輸層70的電洞傳輸性有機材料,可單獨或組合使用各種p型高分子材料(有機聚合物)、各種p型低分子材料。 具體而言,作為電洞傳輸層70的材料,例如可列舉:N,N'-二(1-萘基)-N,N'-二苯基-1,1'-聯苯-4,4'-二胺(α-NPD)、N4,N4'-雙(二苯並[b,d]噻吩-4-基)-N4,N4'-二苯基聯苯基-4,4'-二胺(DBTPB)、聚芳基胺、芴-芳基胺共聚物、芴-聯噻吩共聚物、聚(N-乙烯基咔唑)、聚乙烯基芘、聚乙烯基蒽、聚噻吩、聚烷基噻吩、聚己基噻吩、聚(對苯乙炔)、聚噻吩乙炔、芘甲醛樹脂、乙基咔唑甲醛樹脂或其衍生物等。該些電洞傳輸層70的材料亦可以與其他化合物的混合物的形式使用。作為一例,作為用作電洞傳輸層70的材料的含有聚噻吩的混合物,可列舉聚(3,4-亞乙二氧基噻吩/苯乙烯磺酸)(PEDOT/PSS)等。"Electric hole transport layer" As the hole-transporting organic material used in the hole-transporting layer 70 , various p-type high molecular materials (organic polymers) and various p-type low molecular weight materials can be used alone or in combination. Specifically, as a material of the hole transport layer 70, for example, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4 '-Diamine (α-NPD), N4,N4'-bis(dibenzo[b,d]thiophen-4-yl)-N4,N4'-diphenylbiphenyl-4,4'-di Amine (DBTPB), polyarylamine, fluorene-arylamine copolymer, fluorene-bithiophene copolymer, poly(N-vinylcarbazole), polyvinylpyrene, polyvinyl anthracene, polythiophene, polyalkylene thiophene, polyhexylthiophene, poly(p-phenylene vinylene), polythiophene acetylene, pyrene formaldehyde resin, ethylcarbazole formaldehyde resin or derivatives thereof, etc. The materials of the hole transport layer 70 can also be used in the form of a mixture with other compounds. As an example, poly(3,4-ethylenedioxythiophene/styrenesulfonic acid) (PEDOT/PSS) etc. are mentioned as a polythiophene-containing mixture used as a material of the hole transport layer 70 .

電洞輸送層70的平均厚度沒有特別限定,較佳為10 nm~150 nm,更佳為20 nm~100 nm。再者,電洞傳輸層70的平均厚度例如可藉由觸針式輪廓儀、分光橢圓偏光儀測定。The average thickness of the hole transport layer 70 is not particularly limited, but is preferably 10 nm to 150 nm, and more preferably 20 nm to 100 nm. In addition, the average thickness of the hole transport layer 70 can be measured by, for example, a stylus profiler or a spectroscopic ellipsometry.

「電洞注入層」 電洞注入層80可由無機材料構成,亦可由有機材料構成。無機材料與有機材料相比更穩定,因此與使用有機材料的情況相比,容易獲得對氧或水的高耐性。作為無機材料,無特別限制,例如可使用一種或兩種以上的氧化釩(V2 O5 )、氧化鉬(MoO3 )、氧化釕(RuO2 )等金屬氧化物。另一方面,作為有機材料,可使用1,4,5,8,9,12-六氮雜聯三伸苯-2,3,6,7,10,11-六甲腈(HAT-CN)、2,3,5,6-四氟-7,7,8,8-四氰基醌二甲烷(F4-TCNQ)等。"Hole Injection Layer" The hole injection layer 80 may be composed of inorganic materials or organic materials. Inorganic materials are more stable than organic materials, and therefore, higher resistance to oxygen or water is easily obtained than in the case of using organic materials. The inorganic material is not particularly limited, and for example, one or more metal oxides such as vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 3 ), and ruthenium oxide (RuO 2 ) can be used. On the other hand, as the organic material, 1,4,5,8,9,12-hexaazabitriphenylene-2,3,6,7,10,11-hexacarbonitrile (HAT-CN), 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), etc.

電洞注入層80的平均厚度沒有特別限定,但較佳為1 nm~1000 nm,更佳為5 nm~50 nm。再者,電洞注入層80的平均厚度可藉由晶體振子膜厚計在成膜時進行測定。The average thickness of the hole injection layer 80 is not particularly limited, but is preferably 1 nm to 1000 nm, more preferably 5 nm to 50 nm. In addition, the average thickness of the hole injection layer 80 can be measured at the time of film formation with a crystal oscillator film thickness meter.

「陽極」 作為陽極90所使用的材料,可列舉:ITO、IZO、Au、Pt、Ag、Cu、Al或包含該些的合金等。其中,作為陽極90的材料,較佳為使用ITO、IZO、Au、Ag、Al。"anode" As a material used for the anode 90, ITO, IZO, Au, Pt, Ag, Cu, Al, alloys containing these, etc. are mentioned. Among them, as the material of the anode 90, ITO, IZO, Au, Ag, and Al are preferably used.

陽極90的平均厚度沒有特別限定,但較佳為10 nm~1000 nm,更佳為30 nm~150 nm。另外,即使在使用不透明材料作為陽極90的材料的情況下,例如亦可藉由使平均厚度為10 nm~30 nm左右,而作為頂部發光型的有機EL元件中的透明陽極使用。再者,陽極90的平均厚度可藉由晶體振子膜厚計在陽極90的成膜時進行測定。The average thickness of the anode 90 is not particularly limited, but is preferably 10 nm to 1000 nm, more preferably 30 nm to 150 nm. In addition, even when an opaque material is used as the material of the anode 90, it can be used as a transparent anode in a top emission type organic EL element by, for example, making the average thickness about 10 nm to 30 nm. In addition, the average thickness of the anode 90 can be measured at the time of film formation of the anode 90 by a crystal oscillator film thickness meter.

「密封」 圖11所示的有機EL元件100可視需要進行密封。 例如,圖11所示的有機EL元件100可藉由具有收容有機EL元件的凹狀空間的密封容器(未圖示)、及使密封容器的邊緣部與基板2接著的接著劑而進行密封。另外,亦可藉由在密封容器中收容有機EL元件,並填充由紫外線(ultraviolet,UV)硬化樹脂等構成的密封材來密封。另外,例如,圖11所示的有機EL元件100亦可用由配置於陽極90上的板構件(未圖示)及沿板構件的與陽極90相向之側的邊緣部所配置的框構件(未圖示)所構成的密封構件、以及使板構件與框構件之間及框構件與基板20之間接著的接著劑進行密封。"seal" The organic EL element 100 shown in FIG. 11 may be sealed as necessary. For example, the organic EL element 100 shown in FIG. 11 can be sealed by an airtight container (not shown) having a concave space for accommodating the organic EL element, and an adhesive for bonding the edge of the airtight container to the substrate 2 . Alternatively, the organic EL element may be housed in an airtight container, and the sealing material may be filled with a sealing material made of an ultraviolet (ultraviolet, UV) curable resin or the like. In addition, for example, the organic EL element 100 shown in FIG. 11 may also use a plate member (not shown) arranged on the anode 90 and a frame member (not shown) arranged along the edge portion of the plate member on the side facing the anode 90 . The sealing member constituted by the figure) and the adhesive for bonding between the plate member and the frame member and between the frame member and the substrate 20 are sealed.

於使用密封容器或密封構件對有機EL元件進行密封的情況下,可於密封容器內或密封構件的內側配置吸收水分的乾燥材。另外,作為密封容器或密封構件,可使用吸收水分的材料。另外,可於經密封的密封容器內或密封構件的內側形成空間。When an organic EL element is sealed using a sealed container or a sealing member, a drying material that absorbs moisture can be arranged in the sealed container or inside the sealing member. In addition, as the sealed container or the sealing member, a material that absorbs moisture can be used. In addition, a space may be formed in the sealed airtight container or the inner side of the sealing member.

作為在對圖11所示的有機EL元件100進行密封的情況下所使用的密封容器或密封構件的材料,可使用樹脂材料、玻璃材料等。作為密封容器或密封構件所使用的樹脂材料及玻璃材料,可列舉與基板20所使用的材料相同者。As a material of the sealing container or sealing member used when the organic EL element 100 shown in FIG. 11 is sealed, a resin material, a glass material, or the like can be used. The resin material and glass material used for the sealed container or the sealing member are the same as those used for the substrate 20 .

「有機EL元件的製造方法」 接著,作為本發明的有機EL元件的製造方法的一例,說明圖11所示的有機EL元件的製造方法。 於製造圖11所示的有機EL元件100時,首先,於基板20上形成陰極30。陰極30可藉由濺鍍法、真空蒸鍍法、溶膠-凝膠法、噴霧熱分解(Spray Pyrolysis Deposition,SPD)法、原子層堆積(atomic layer deposition,ALD)法、氣相成膜法、液相成膜法等形成。於形成陰極30時,可使用接合金屬箔的方法。"Manufacturing method of organic EL element" Next, the manufacturing method of the organic EL element shown in FIG. 11 is demonstrated as an example of the manufacturing method of the organic EL element of this invention. When manufacturing the organic EL element 100 shown in FIG. 11 , first, the cathode 30 is formed on the substrate 20 . The cathode 30 can be formed by sputtering method, vacuum evaporation method, sol-gel method, spray thermal decomposition (Spray Pyrolysis Deposition, SPD) method, atomic layer deposition (atomic layer deposition, ALD) method, vapor deposition method, Liquid-phase film formation method, etc. When forming the cathode 30, a method of bonding metal foils can be used.

接著,在陰極30上,視情況形成塗佈中間層40及電洞傳輸層50,然後形成電荷產生層10。電荷產生層10如上所述主要由兩層以上構成。 接著,在電荷產生層10上依次形成發光層60及電洞傳輸層70。Next, on the cathode 30, a coating intermediate layer 40 and a hole transport layer 50 are formed as appropriate, and then the charge generation layer 10 is formed. The charge generation layer 10 is mainly composed of two or more layers as described above. Next, the light emitting layer 60 and the hole transport layer 70 are sequentially formed on the charge generation layer 10 .

電荷產生層10、發光層60、電洞傳輸層70的形成方法沒有特別限定,可根據各自所使用的材料的特性,適當採用以往公知的各種形成方法。 具體而言,作為形成電荷產生層10、發光層60、電洞傳輸層70的各層的方法,可列舉塗佈含有成為電荷產生層10、發光層60、電洞傳輸層70的有機化合物的有機化合物溶液的塗佈法、真空蒸鍍法、超稀薄溶液蒸發噴射沈積(Evaporative Spray Deposition from Ultra-dilute Solution,ESDUS)等。The formation methods of the charge generation layer 10 , the light emitting layer 60 , and the hole transport layer 70 are not particularly limited, and various conventionally known formation methods can be appropriately adopted according to the characteristics of the materials used for each. Specifically, as a method of forming each of the charge generation layer 10 , the light emitting layer 60 , and the hole transport layer 70 , an organic compound containing an organic compound to become the charge generation layer 10 , the light emitting layer 60 , and the hole transport layer 70 can be applied. Compound solution coating method, vacuum evaporation method, Evaporative Spray Deposition from Ultra-dilute Solution (ESDUS), etc.

接著,在電洞傳輸層70上依次形成電洞注入層80及陽極90。 在電洞注入層80由有機材料構成的情況下,電洞注入層80例如可與電荷產生層10、發光層60、電洞傳輸層70同樣地形成。 另外,陽極90例如能夠與陰極30同樣地形成。 藉由以上的步驟,獲得圖11所示的有機EL元件100。Next, the hole injection layer 80 and the anode 90 are sequentially formed on the hole transport layer 70 . When the hole injection layer 80 is made of an organic material, the hole injection layer 80 can be formed in the same manner as the charge generation layer 10 , the light emitting layer 60 , and the hole transport layer 70 , for example. In addition, the anode 90 can be formed similarly to the cathode 30, for example. Through the above steps, the organic EL element 100 shown in FIG. 11 is obtained.

「密封方法」 當密封圖11所示的有機EL元件100時,可使用通常用於密封有機EL元件的方法進行密封。"Sealing method" When the organic EL element 100 shown in FIG. 11 is sealed, the sealing can be performed using a method generally used for sealing organic EL elements.

本實施方式的有機EL元件100具有所述包含電子傳輸性材料及電子給予性材料的層(n-摻雜層)2,因此,藉由電子給予性材料改變電子傳輸性材料的能階,可自鄰接的包含電洞傳輸性材料及電子接受性材料的層(p-摻雜層)1有效率地吸入電子,並且,對自發光層60側傳送來的電洞的阻止性亦高。因此,在電荷產生層10內有效率地產生電子,成為驅動電壓低的有機EL元件,或者對自發光層60傳送來的電洞的阻止性能提高,從而成為發光效率高的有機EL元件。The organic EL element 100 of the present embodiment has the layer (n-doped layer) 2 including the electron-transporting material and the electron-donating material. Therefore, by changing the energy level of the electron-transporting material by the electron-donating material, it is possible to Electrons are efficiently absorbed from the adjacent layer (p-doped layer) 1 containing a hole-transporting material and an electron-accepting material, and the resistance to holes transmitted from the light-emitting layer 60 side is also high. Therefore, electrons are efficiently generated in the charge generation layer 10 and an organic EL element with a low driving voltage is obtained, or the blocking performance of holes transmitted from the light emitting layer 60 is improved, and an organic EL element with high luminous efficiency is obtained.

「其他例子」 本發明的有機EL元件並不限於所述實施方式所說明的有機EL元件。 具體而言,在所述的實施方式中,以電荷產生層作為電子注入層發揮功能的情況為例進行了說明,但本發明的有機EL元件只要在2個電極間具有本發明中描述的電荷產生層即可。因此圖5~圖10所示的結構亦落入本發明的範圍內。"Other Examples" The organic EL element of the present invention is not limited to the organic EL element described in the above embodiments. Specifically, in the above-described embodiments, the case where the charge generation layer functions as an electron injection layer has been described as an example, but the organic EL element of the present invention only has the charge described in the present invention between two electrodes. layer can be generated. Therefore, the structures shown in FIGS. 5 to 10 also fall within the scope of the present invention.

另外,在圖11所示的有機EL元件100中,塗佈中間層40、電洞傳輸層50、電洞傳輸層70、電洞注入層80根據需要形成即可,亦可不設置。 另外,陰極30、塗佈中間層40、電洞傳輸層50、發光層60、電洞傳輸層70、電洞注入層80、陽極90的各層可由1層形成,亦可包含兩層以上。In addition, in the organic EL element 100 shown in FIG. 11 , the intermediate layer 40 , the hole transport layer 50 , the hole transport layer 70 , and the hole injection layer 80 may be formed as needed, or not provided. In addition, each of the cathode 30 , the coating intermediate layer 40 , the hole transport layer 50 , the light emitting layer 60 , the hole transport layer 70 , the hole injection layer 80 , and the anode 90 may be formed by one layer, or may include two or more layers.

另外,圖11所示的有機EL元件100可在圖11所示的各層間具有其它層。具體而言,為了進一步提高有機EL元件的特性等,根據需要可具有電子阻擋層等。In addition, the organic EL element 100 shown in FIG. 11 may have other layers between the layers shown in FIG. 11 . Specifically, in order to further improve the characteristics and the like of the organic EL element, an electron blocking layer and the like may be provided as necessary.

另外,在所述實施方式中,以在基板20與發光層60之間配置陰極30的反向結構的有機EL元件為例進行了說明,但亦可為圖6~圖10的任意結構的有機EL元件。In addition, in the above-mentioned embodiment, the organic EL element of the reverse structure in which the cathode 30 is arranged between the substrate 20 and the light-emitting layer 60 has been described as an example, but the organic EL element of any structure as shown in FIGS. 6 to 10 may be used as an example. EL element.

本發明的有機EL元件可藉由適當選擇發光層等的材料而改變發光色,亦可藉由併用彩色濾光片等而獲得所需的發光色。因此,本發明的有機EL元件可較佳地用作顯示裝置的發光部位或照明裝置。The organic EL element of the present invention can change the emission color by appropriately selecting the material of the light-emitting layer and the like, and can also obtain a desired emission color by using a color filter or the like in combination. Therefore, the organic EL element of the present invention can be preferably used as a light-emitting portion of a display device or a lighting device.

<顯示裝置> 本發明的顯示裝置的特徵在於包括所述有機電激發光元件。本發明的顯示裝置包括在陰極與陽極之間具有電荷產生層、生產率優異、發光效率高、驅動穩定性優異的本發明的有機EL元件。因此,本發明的顯示裝置容易製造,即使在氧或水分的存在下亦不易劣化,發光特性優異。<Display device> The display device of the present invention is characterized by including the organic electroluminescent element. The display device of the present invention includes the organic EL element of the present invention having a charge generating layer between the cathode and the anode, excellent productivity, high luminous efficiency, and excellent driving stability. Therefore, the display device of the present invention is easy to manufacture, hardly deteriorates even in the presence of oxygen or moisture, and is excellent in light emission characteristics.

<照明裝置> 本發明的照明裝置的特徵在於包括所述有機電激發光元件。本發明的照明裝置包括生產率優異、發光效率高、驅動穩定性優異的本發明的有機EL元件。因此,本發明的照明裝置容易製造,即使在氧或水分存在下亦不易劣化,發光特性優異。<Lighting device> The lighting device of the present invention is characterized by including the organic electroluminescent element. The lighting device of the present invention includes the organic EL element of the present invention which is excellent in productivity, high in luminous efficiency, and excellent in driving stability. Therefore, the lighting device of the present invention is easy to manufacture, hardly deteriorates even in the presence of oxygen or moisture, and is excellent in light emission characteristics.

<有機薄膜太陽能電池> 本發明的有機薄膜太陽能電池的特徵在於包括所述電荷產生層。例如,在有機薄膜太陽能電池中使用電荷產生層的情況下,特佳的方式是使用光電轉換層代替圖9和圖10所示的發光層,並經由電荷產生層積層吸收波長不同的多個光電轉換層。藉此,能夠有效率地將寬波長範圍的光變換為電荷,獲得高的發電效率。另外,本發明的有機薄膜太陽能電池容易製造,即使在氧或水分的存在下亦不易劣化。<Organic thin film solar cells> The organic thin film solar cell of the present invention is characterized by including the charge generation layer. For example, in the case of using a charge generation layer in an organic thin film solar cell, it is particularly preferable to use a photoelectric conversion layer instead of the light emitting layer shown in FIGS. conversion layer. Thereby, light in a wide wavelength range can be efficiently converted into electric charges, and high power generation efficiency can be obtained. In addition, the organic thin-film solar cell of the present invention is easy to manufacture and hardly deteriorates even in the presence of oxygen or moisture.

本發明不限於所述實施方式,本發明的電荷產生層例如能夠用在感測器等器件中。 [實施例]The present invention is not limited to the above-described embodiments, and the charge generating layer of the present invention can be used in devices such as sensors, for example. [Example]

以下,列舉實施例更詳細地說明本發明,但本發明並不受下述實施例的任何限定。 此處,在通常作為陽極使用的功函數大的ITO上形成電荷產生層,驗證來自ITO側的電子產生(電子注入)。Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited to the following examples at all. Here, a charge generation layer was formed on ITO with a large work function generally used as an anode, and electron generation (electron injection) from the ITO side was verified.

(實施例1) <有機EL元件製作> 藉由以下所示的方法,製造並評價圖11所示的有機EL元件100。(Example 1) <Organic EL element production> The organic EL element 100 shown in FIG. 11 was manufactured and evaluated by the method shown below.

[步驟1] 作為基板20,準備了具有由ITO構成的圖案化為寬度3 mm的電極(陰極30)的、平均厚度0.7 mm的市售的透明玻璃基板。 繼而,將具有陰極30的基板20分別在丙酮中、異丙醇中進行10分鐘的超聲波清洗,在異丙醇中煮沸5分鐘。然後,自異丙醇中取出具有陰極30的基板20,藉由吹氮使其乾燥,進行20分鐘的UV臭氧清洗。[step 1] As the substrate 20 , a commercially available transparent glass substrate having an average thickness of 0.7 mm and having an electrode (cathode 30 ) made of ITO and patterned to a width of 3 mm was prepared. Next, the substrate 20 having the cathode 30 was ultrasonically cleaned in acetone and isopropanol for 10 minutes, respectively, and boiled in isopropanol for 5 minutes. Then, the substrate 20 having the cathode 30 was taken out from isopropyl alcohol, dried by blowing nitrogen, and UV ozone cleaning was performed for 20 minutes.

[步驟2] 在所述[步驟1]中製作的ITO電極(陰極30)上,藉由旋塗,作為塗佈中間層40,形成30 nm的賀利式(Heraeus)公司製造的「克萊維斯(Clevios)HIL1.3」(導電性高分子)。[Step 2] On the ITO electrode (cathode 30 ) prepared in the above [Step 1], a 30 nm “Clevios” manufactured by Heraeus was formed as the coating intermediate layer 40 by spin coating. ) HIL1.3" (conductive polymer).

接著,將形成有塗佈中間層40及其以下各層的基板20固定在真空蒸鍍裝置的基板支架上。 另外,將由下述結構式(10-1)表示的4,4',4''-三(N-3-甲基苯基-N-苯基胺基)三苯胺(m-MTDATA,游離電位=5.1 eV); 由下述結構式(10-2)表示的2,4,6-三(間吡啶-3-基-苯基)三嗪(TmPPyTz); 由下述結構式(10-3)表示的化合物(Py-hpp2); 由下述結構式(10-4)表示的雙[2-(2-苯並噻唑基)苯酚]鋅(II)(Zn(BTZ)2 ); 由下述結構式(10-5)表示的三[1-苯基異喹啉]銥(III)(Ir(piq)3 ); 由以下結構式(10-6)表示的N,N'-二(1-萘基)-N,N'-二苯基-1,1'-聯苯-4,4'-二胺(α-NPD); 由下述結構式(10-7)表示的1,4,5,8,9,12-六氮雜聯三伸苯-2,3,6,7,10,11-六甲腈(HAT-CN);以及 Al分別放入氧化鋁坩堝中而設為蒸鍍源。 [化17]

Figure 02_image019
Next, the substrate 20 on which the coating intermediate layer 40 and the following layers are formed is fixed to the substrate holder of the vacuum vapor deposition apparatus. In addition, 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA, free potential) represented by the following structural formula (10-1) =5.1 eV); 2,4,6-tris(m-pyridin-3-yl-phenyl)triazine (TmPPyTz) represented by the following structural formula (10-2); By the following structural formula (10-3 A compound (Py-hpp2) represented by ); Bis[2-(2-benzothiazolyl)phenol]zinc(II)(Zn(BTZ) 2 ) represented by the following structural formula (10-4); from the following Tris[1-phenylisoquinoline]iridium (III) (Ir(piq) 3 ) represented by the structural formula (10-5); N,N′-bis() represented by the following structural formula (10-6) 1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (α-NPD); 1, represented by the following structural formula (10-7) 4,5,8,9,12-hexaazabitriphenylene-2,3,6,7,10,11-hexacarbonitrile (HAT-CN); and Al were placed in an alumina crucible and set as Evaporation source. [Chemical 17]
Figure 02_image019

繼而,將真空蒸鍍裝置的腔室內減壓至1×10-5 Pa的壓力,藉由利用電阻加熱的真空蒸鍍法,而連續形成電荷產生層10、發光層60、電洞傳輸層70、電洞注入層80、陽極90。Then, the pressure in the chamber of the vacuum evaporation device was reduced to a pressure of 1×10 −5 Pa, and the charge generation layer 10 , the light emitting layer 60 , and the hole transport layer 70 were successively formed by the vacuum evaporation method using resistance heating. , the hole injection layer 80 , and the anode 90 .

[步驟3] 在塗佈中間層40上藉由真空蒸鍍法形成10 nm的m-MTDATA作為電洞輸送層50。[Step 3] 10 nm m-MTDATA was formed on the coating intermediate layer 40 by vacuum evaporation as the hole transport layer 50 .

[步驟4] 接著,在電洞傳輸層50上形成以質量比1:1共蒸鍍作為電洞傳輸性材料的m-MTDATA及作為電子接受性材料的HAT-CN而成的膜作為p-摻雜層1。平均膜厚為10 nm。[Step 4] Next, a film obtained by co-evaporating m-MTDATA as a hole transport material and HAT-CN as an electron accepting material at a mass ratio of 1:1 is formed on the hole transport layer 50 as the p-doped layer 1 . The average film thickness is 10 nm.

[步驟5] 接著,在p-摻雜層1上藉由真空蒸鍍法形成10 nm的HAT-CN作為摻雜劑層3。[Step 5] Next, a 10 nm HAT-CN was formed as a dopant layer 3 on the p-doped layer 1 by a vacuum evaporation method.

[步驟6] 接著,在摻雜劑層3上形成以質量比7:3共蒸鍍作為電子傳輸性材料的TmPPyTz及作為電子給予性材料的Py-hpp2而成的膜,作為n-摻雜層2。平均膜厚為10 nm。[Step 6] Next, a film obtained by co-evaporating TmPPyTz as an electron transport material and Py-hpp2 as an electron donating material at a mass ratio of 7:3 was formed on the dopant layer 3 as the n-doped layer 2 . The average film thickness is 10 nm.

[步驟7] 接著,以Zn(BTZ)2 作為主體、以Ir(piq)3 作為摻雜劑共蒸鍍30 nm而形成發光層60。此時,以Ir(piq)3 相對於發光層60整體而成為6質量%的方式設置摻雜濃度。 接著,在形成有直至發光層60的基板20上,成膜40 nm的α-NPD,形成電洞傳輸層70。 進而,成膜10 nm的HAT-CN,形成電洞注入層80。 接著,在形成有直至電洞注入層80的基板20上,藉由真空蒸鍍法形成由鋁構成的膜厚100 nm的陽極90。[Step 7] Next, the light-emitting layer 60 was formed by co-evaporation for 30 nm using Zn(BTZ) 2 as a host and Ir(piq) 3 as a dopant. At this time, the doping concentration was set so that Ir(piq) 3 was 6 mass % with respect to the entire light-emitting layer 60 . Next, on the substrate 20 on which the light-emitting layer 60 was formed, a film of α-NPD having a thickness of 40 nm was formed to form the hole transport layer 70 . Further, HAT-CN was formed to a thickness of 10 nm to form a hole injection layer 80 . Next, on the substrate 20 on which the hole injection layer 80 was formed, the anode 90 made of aluminum with a film thickness of 100 nm was formed by a vacuum deposition method.

再者,陽極90使用不鏽鋼製的蒸鍍遮罩將蒸鍍面形成為寬3 mm的帶狀,將所製作的有機EL元件的發光面積設為9 mm2In addition, the anode 90 was formed into a strip shape with a width of 3 mm using a deposition mask made of stainless steel, and the light emitting area of the produced organic EL element was set to 9 mm 2 .

[步驟8] 繼而,將形成有包括陽極90及其以下的各層的基板2收容於具有凹狀空間的玻璃蓋(密封容器)內,填充由紫外線(UV)硬化樹脂所構成的密封材,藉此進行密封,獲得實施例1的有機EL元件。[Step 8] Next, the substrate 2 on which the layers including the anode 90 and below are formed is housed in a glass cover (sealed container) having a concave space, and a sealing material made of an ultraviolet (UV) curing resin is filled to seal it. The organic EL element of Example 1 was obtained.

(實施例2) [步驟6]中,作為電子給予性材料使用下述結構式(10-8)所示的啡啉系化合物(Phenan-OMe),除此以外,在與實施例1相同的條件下製作有機EL元件。 [化18]

Figure 02_image021
(Example 2) In [Step 6], the same procedures as in Example 1 were performed except that the phenanthroline compound (Phenan-OMe) represented by the following structural formula (10-8) was used as the electron donating material. The organic EL element was fabricated under the conditions. [Chemical 18]
Figure 02_image021

(實施例3) [步驟6]中,使用下述結構式(10-9)所示的環狀吡啶系化合物(AzPy)作為電子給予性材料,除此之外,在與實施例1相同的條件下製作有機EL元件。 [化19]

Figure 02_image022
(Example 3) In [Step 6], the same procedure as in Example 1 was carried out, except that the cyclic pyridine-based compound (AzPy) represented by the following structural formula (10-9) was used as the electron donating material. The organic EL element was fabricated under the conditions. [Chemical 19]
Figure 02_image022

(實施例4) 除了省略[步驟5]以外,在與實施例1相同的條件下製作有機EL元件。(Example 4) An organic EL element was produced under the same conditions as in Example 1 except that [Step 5] was omitted.

(實施例5) 除了在[步驟7]中,作為發光層60,使用三(8-羥基喹啉)鋁(Alq3 )以外,在與實施例1相同的條件下,製作有機EL元件。(Example 5) An organic EL element was produced under the same conditions as in Example 1, except that tris(8-quinoline)aluminum (Alq 3 ) was used as the light-emitting layer 60 in [Step 7].

(比較例1) 除了在[步驟6]中沒有共蒸鍍作為電子給予性材料的Py-hpp2以外,在與實施例1相同的條件下製作有機EL元件。(Comparative Example 1) An organic EL element was produced under the same conditions as in Example 1, except that Py-hpp2 as an electron-donating material was not co-evaporated in [Step 6].

(比較例2) 在[步驟6]中,作為電子給予性材料使用作為鋰錯合物8-羥基喹啉鋰(Liq)代替Py-hpp2,作為發光層60使用Alq3 ,除此之外,在與實施例1相同的條件下製作有機EL元件。(Comparative Example 2) In [Step 6], 8-quinolinolatolithium (Liq) was used as the electron-donating material instead of Py-hpp2 as the lithium complex, and Alq 3 was used as the light-emitting layer 60 . An organic EL element was produced under the same conditions as in Example 1.

(有機EL元件的發光特性測定) 對於製作的有機EL元件,使用吉時利(Kdthley)公司製造的「2400型電源電錶」施加電壓,調查了施加電壓與電流密度的關係。進而,使用柯尼卡美能達(Konica Minolta)公司製的「LS-100」測定亮度,根據得到的亮度-電壓-電流值的相關關係,計算電流密度與外部量子效率的關係。這些結果如表1所示。(Measurement of Light Emitting Characteristics of Organic EL Elements) A voltage was applied to the produced organic EL element using a "2400 type power meter" manufactured by Kdthley, and the relationship between the applied voltage and the current density was investigated. Furthermore, the luminance was measured using "LS-100" manufactured by Konica Minolta, and the relationship between the current density and the external quantum efficiency was calculated from the obtained correlation of luminance-voltage-current value. These results are shown in Table 1.

[表1] 元件構成 元件特性(施加電壓6 V) 塗佈中間層 40 電洞傳輸層 50 p-摻雜層 1 摻雜劑層 3 n-摻雜層 2 發光層 60 電洞傳輸層 70 電洞注入層 80 陽極 90 電流密度 (mA/cm 亮度 (cd/m2 ) 外部量子效率 (%) 比較例1 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz Zn(BTZ)2 +Ir(piq)3 α-NPD HAT-CN Al 4.5 167 4.9 實施例1 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz +Py-hpp2 Zn(BTZ)2 +Ir(piq)3 α-NPD HAT-CN Al 4.98 319 8.29 實施例4 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN TmPPyTz +Py-hpp2 Zn(BTZ)2 +Ir(piq)3 α-NPD HAT-CN Al 1.38 127 12.2 實施例2 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz + Phenan-OMe Zn(BTZ)2 +Ir(piq)3 α-NPD HAT-CN Al 0.7 52 9.0 實施例3 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz +AzPy Zn(BTZ)2 +Ir(piq)3 α-NPD HAT-CN Al 3.4 337 12.3 實施例5 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz +Py-hpp2 Alq3 α-NPD HAT-CN Al 0.19 4 0.7 比較例2 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz +Liq Alq3 α-NPD HAT-CN Al 0.01 0 0 [Table 1] Components Element Characteristics (Applied Voltage 6 V) Coating the intermediate layer 40 hole transport layer 50 p-doped layer 1 dopant layer 3 n-doped layer 2 Light-emitting layer 60 hole transport layer 70 hole injection layer 80 Anode 90 Current density (mA/cm 2 ) Brightness (cd/m 2 ) External quantum efficiency (%) Comparative Example 1 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz Zn(BTZ) 2 +Ir(piq) 3 alpha-NPD HAT-CN Al 4.5 167 4.9 Example 1 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz +Py-hpp2 Zn(BTZ) 2 +Ir(piq) 3 alpha-NPD HAT-CN Al 4.98 319 8.29 Example 4 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN without TmPPyTz +Py-hpp2 Zn(BTZ) 2 +Ir(piq) 3 alpha-NPD HAT-CN Al 1.38 127 12.2 Example 2 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz + Phenan-OMe Zn(BTZ) 2 +Ir(piq) 3 alpha-NPD HAT-CN Al 0.7 52 9.0 Example 3 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz +AzPy Zn(BTZ) 2 +Ir(piq) 3 alpha-NPD HAT-CN Al 3.4 337 12.3 Example 5 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz +Py-hpp2 Alq 3 alpha-NPD HAT-CN Al 0.19 4 0.7 Comparative Example 2 Clevios HIL1.3 m-MTDATA m-MTDATA +HAT-CN HAT-CN TmPPyTz +Liq Alq 3 alpha-NPD HAT-CN Al 0.01 0 0

根據實施例1與比較例1的比較可知,由含有Py-hpp2及電子傳輸性材料的電荷產生層構成的有機EL元件與僅由電子傳輸性材料構成電荷產生層的有機EL元件相比,顯示出低驅動電壓及高的發光效率。這被認為是Py-hpp2(鹼材料、摻雜劑)使電子傳輸性材料的能階變化的結果,電子注入性及電洞阻止性得到改善的結果。The comparison between Example 1 and Comparative Example 1 shows that the organic EL element composed of the charge generation layer containing Py-hpp2 and the electron transport material shows a higher display value than the organic EL element composed of the charge generation layer composed of only the electron transport material. Low driving voltage and high luminous efficiency. This is considered to be the result of the change in the energy level of the electron-transporting material by Py-hpp2 (alkali material, dopant), and the improvement of the electron-injecting property and the hole-blocking property.

根據實施例2與比較例1的比較可知,與僅由電子傳輸性材料構成電荷產生層的有機EL元件相比,由含有Phenan-OMe及電子傳輸性材料的電荷產生層構成的有機EL元件亦顯示出高的發光效率。這被認為是Phenan-OMe(鹼材料、摻雜劑)使電子傳輸性材料的能階變化的結果,電洞阻止性得到改善的結果。From the comparison between Example 2 and Comparative Example 1, it can be seen that the organic EL element composed of the charge generation layer containing Phenan-OMe and the electron transport material also has a higher efficiency than the organic EL element composed of the charge generation layer composed of the electron transport material alone. Shows high luminous efficiency. This is considered to be a result of the improvement of the hole resistance due to the change in the energy level of the electron transport material by Phenan-OMe (alkali material, dopant).

根據實施例3與比較例1的比較可知,與僅由電子傳輸性材料構成電荷產生層的有機EL元件相比,由含有AzPy及電子傳輸性材料的電荷產生層構成的有機EL元件亦顯示出低驅動電壓及高的發光效率。這被認為是AzPy(鹼材料、摻雜劑)使電子傳輸性材料的能階變化的結果、電子注入性及電洞阻止性得到改善的結果。From the comparison between Example 3 and Comparative Example 1, it was found that the organic EL element composed of the charge generation layer containing AzPy and the electron transport material also exhibited higher Low driving voltage and high luminous efficiency. This is considered to be a result of the change in the energy level of the electron-transporting material by AzPy (alkali material, dopant), and the improvement of the electron-injecting property and the hole-blocking property.

根據實施例1與實施例4的比較可知,摻雜劑層3的有無對電荷產生沒有大的影響。From the comparison between Example 1 and Example 4, it can be seen that the presence or absence of the dopant layer 3 has no great influence on the generation of electric charges.

根據實施例5與比較例2的比較可知,與在n-摻雜層2中使用作為含有電荷產生中廣泛使用的鹼金屬的錯合物的Liq的有機EL元件相比,在n-摻雜層2中使用作為鹼材料的Py-hpp2的有機EL元件在低驅動電壓下獲得高的發光效率,作為電子給予性材料較佳為鹼材料。 [產業上之可利用性]From the comparison between Example 5 and Comparative Example 2, compared with the organic EL element in which Liq, which is a complex containing an alkali metal widely used for charge generation, is used in the n-doped layer 2, the n-doped layer 2 An organic EL element using Py-hpp2 as an alkali material in the layer 2 achieves high luminous efficiency at a low driving voltage, and an alkali material is preferable as the electron donating material. [Industrial Availability]

本發明的電荷產生層可用於有機電激發光元件、顯示裝置、照明裝置、有機薄膜太陽能電池等。The charge generation layer of the present invention can be used in organic electroluminescent elements, display devices, lighting devices, organic thin film solar cells, and the like.

10:電荷產生層 1:包含電洞傳輸性材料及電子接受性材料的層(p-摻雜層) 2:包含電子傳輸性材料及電子給予性材料的層(n-摻雜層) 3:僅包含電子接受性材料或電子給予性材料的層(摻雜劑層) 100:有機EL(電激發光)元件 20:基板 30:陰極 40:塗佈中間層 50:電洞傳輸層 60:發光層 70:電洞傳輸層 80:電洞注入層 90:陽極 45:電子傳輸層 39:電極 57:電荷傳輸層10: Charge generation layer 1: A layer containing a hole transport material and an electron accepting material (p-doped layer) 2: Layer containing electron-transporting material and electron-donating material (n-doped layer) 3: Layer containing only electron-accepting material or electron-donating material (dopant layer) 100: Organic EL (electroluminescence) element 20: Substrate 30: Cathode 40: Coating the intermediate layer 50: hole transport layer 60: Light-emitting layer 70: hole transport layer 80: hole injection layer 90: Anode 45: Electron Transport Layer 39: Electrodes 57: Charge transport layer

圖1是用於說明本發明的電荷產生層的一實施方式的剖面示意圖。 圖2是用於說明本發明的電荷產生層的另一實施方式的剖面示意圖。 圖3是沒有添加摻雜劑的電荷產生層的能階的說明圖。 圖4是添加了摻雜劑的電荷產生層的能階的說明圖。 圖5是用於說明本發明的有機EL元件的一實施方式的剖面示意圖。 圖6是用於說明本發明的有機EL元件的另一實施方式的剖面示意圖。 圖7是用於說明本發明的有機EL元件的另一實施方式的剖面示意圖。 圖8是用於說明本發明的有機EL元件的另一實施方式的剖面示意圖。 圖9是用於說明本發明的有機EL元件的另一實施方式的剖面示意圖。 圖10是用於說明本發明的有機EL元件的另一實施方式的剖面示意圖。 圖11是用於說明本發明的有機EL元件的一例的概略剖面圖。FIG. 1 is a schematic cross-sectional view for explaining one embodiment of the charge generation layer of the present invention. 2 is a schematic cross-sectional view for explaining another embodiment of the charge generation layer of the present invention. FIG. 3 is an explanatory diagram of energy levels of a charge generation layer to which no dopant is added. FIG. 4 is an explanatory diagram of energy levels of a dopant-added charge generation layer. 5 is a schematic cross-sectional view for explaining one embodiment of the organic EL element of the present invention. 6 is a schematic cross-sectional view for explaining another embodiment of the organic EL element of the present invention. 7 is a schematic cross-sectional view for explaining another embodiment of the organic EL element of the present invention. 8 is a schematic cross-sectional view for explaining another embodiment of the organic EL element of the present invention. 9 is a schematic cross-sectional view for explaining another embodiment of the organic EL element of the present invention. 10 is a schematic cross-sectional view for explaining another embodiment of the organic EL element of the present invention. 11 is a schematic cross-sectional view for explaining an example of the organic EL element of the present invention.

10:電荷產生層 10: Charge generation layer

1:包含電洞傳輸性材料及電子接受性材料的層(p-摻雜層) 1: Layer (p-doped layer) containing a hole-transporting material and an electron-accepting material

2:包含電子傳輸性材料及電子給予性材料的層(n-摻雜層) 2: Layer containing electron-transporting material and electron-donating material (n-doped layer)

Claims (11)

一種電荷產生層,其特徵在於,包括:包含電洞傳輸性材料及電子接受性材料的層、以及包含電子傳輸性材料及電子給予性材料的層,其中,所述電子接受性材料是包含選自氟、氯、氰基、硝基、羰基中的取代基的材料,所述電子給予性材料選自酸解離常數pKa為1以上的三級胺、磷腈化合物、胍化合物、包含脒結構的雜環式化合物、具有環結構的烴化合物、啡啉系化合物、三聯吡啶系化合物、環狀吡啶系化合物,所述電荷產生層不含鹼金屬、金屬氧化物,且所述包含電洞傳輸性材料及電子接受性材料的層與所述包含電子傳輸性材料及電子給予性材料的層直接積層。 A charge generation layer comprising: a layer containing a hole transport material and an electron accepting material, and a layer containing an electron transport material and an electron donating material, wherein the electron accepting material is a layer containing a selected A material containing a substituent in fluorine, chlorine, cyano, nitro, and carbonyl, the electron-donating material is selected from tertiary amines with an acid dissociation constant pKa of 1 or more, phosphazene compounds, guanidine compounds, and amidine-containing compounds Heterocyclic compounds, hydrocarbon compounds having a ring structure, phenanthroline-based compounds, terpyridine-based compounds, and cyclic pyridine-based compounds, wherein the charge generating layer does not contain an alkali metal or metal oxide, and the charge generating layer contains a hole transport property The layer of the material and the electron-accepting material is directly laminated with the layer containing the electron-transporting material and the electron-donating material. 如請求項1所述的電荷產生層,其中,所述電洞傳輸性材料的游離電位小於5.7eV,所述電子接受性材料是能夠藉由與所述電洞傳輸性材料進行氧化還原反應而形成電荷轉移錯合物的有機物質,所述電子給予性材料是能夠與所述電子傳輸性材料形成氫鍵的有機物質。 The charge generating layer according to claim 1, wherein the free potential of the hole-transporting material is less than 5.7 eV, and the electron-accepting material is capable of undergoing a redox reaction with the hole-transporting material. An organic substance that forms a charge transfer complex, and the electron-donating material is an organic substance capable of forming a hydrogen bond with the electron-transporting material. 一種電荷產生層,其特徵在於,包括:包含電洞傳輸性材料及電子接受性材料的層、包含電子傳輸性材料及電子給予性材料的層、以及僅包含所述電子接受性材料或所述電子給予性 材料的層,其中,所述電子接受性材料是包含選自氟、氯、氰基、硝基、羰基中的取代基的材料,所述電子給予性材料選自酸解離常數pKa為1以上的三級胺、磷腈化合物、胍化合物、包含脒結構的雜環式化合物、具有環結構的烴化合物、啡啉系化合物、三聯吡啶系化合物、環狀吡啶系化合物,所述電荷產生層不含鹼金屬、金屬氧化物,且所述包含電洞傳輸性材料及電子接受性材料的層與所述包含電子傳輸性材料及電子給予性材料的層經由僅包含所述電子接受性材料或所述電子給予性材料的層而積層。 A charge generating layer comprising: a layer containing a hole transport material and an electron accepting material, a layer containing an electron transport material and an electron donating material, and a layer containing only the electron accepting material or the Electron donating A layer of materials, wherein the electron-accepting material is a material containing a substituent selected from fluorine, chlorine, cyano, nitro, and carbonyl, and the electron-donating material is selected from an acid dissociation constant pKa of 1 or more Tertiary amines, phosphazene compounds, guanidine compounds, heterocyclic compounds containing an amidine structure, hydrocarbon compounds having a ring structure, phenanthroline-based compounds, terpyridine-based compounds, and cyclic pyridine-based compounds, the charge generating layer does not contain Alkali metal, metal oxide, and the layer including the hole transport material and the electron accepting material and the layer including the electron transport material and the electron donating material by including only the electron accepting material or the The layers of the electron donating material are stacked. 如請求項3所述的電荷產生層,其中,所述電洞傳輸性材料的游離電位小於5.7eV,所述電子接受性材料是能夠藉由與所述電洞傳輸性材料進行氧化還原反應而形成電荷轉移錯合物的有機物質,所述電子給予性材料是能夠與所述電子傳輸性材料形成氫鍵的有機物質。 The charge generating layer according to claim 3, wherein the free potential of the hole-transporting material is less than 5.7 eV, and the electron-accepting material is capable of undergoing a redox reaction with the hole-transporting material. An organic substance that forms a charge transfer complex, and the electron-donating material is an organic substance capable of forming a hydrogen bond with the electron-transporting material. 一種電荷產生層的製造方法,其特徵在於,是製造如請求項1至請求項4中任一項所述的電荷產生層的方法,包括:共蒸鍍電洞傳輸性材料及電子接受性材料,形成包含電洞傳輸性材料及電子接受性材料的層的步驟;以及共蒸鍍電子傳輸性材料及電子給予性材料,形成包含電子傳 輸性材料及電子給予性材料的層的步驟。 A method for manufacturing a charge generating layer, characterized in that it is a method for manufacturing the charge generating layer as described in any one of claim 1 to claim 4, comprising: co-evaporating a hole transport material and an electron accepting material , forming a layer comprising a hole transport material and an electron accepting material; and co-evaporating the electron transport material and the electron donating material to form a layer comprising an electron transport material A step of layering a transporting material and an electron donating material. 一種有機電激發光元件,其特徵在於,依次包括陰極、發光層及陽極,其中,在所述陰極與所述發光層之間包括如請求項1至請求項4中任一項所述的電荷產生層,所述包含電洞傳輸性材料及電子接受性材料的層配置在所述陰極側,所述包含電子傳輸性材料及電子給予性材料的層配置在所述發光層側。 An organic electroluminescent element, characterized by comprising a cathode, a light-emitting layer and an anode in sequence, wherein the charge according to any one of claim 1 to claim 4 is included between the cathode and the light-emitting layer A generation layer, the layer including the hole transport material and the electron accepting material is disposed on the cathode side, and the layer including the electron transport material and the electron donating material is disposed on the light emitting layer side. 一種有機電激發光元件,其特徵在於,依次包括陰極、發光層及陽極,其中,在所述陽極與所述發光層之間包括如請求項1至請求項4中任一項所述的電荷產生層,所述包含電洞傳輸性材料及電子接受性材料的層配置在所述發光層側,所述包含電子傳輸性材料及電子給予性材料的層配置在所述陽極側。 An organic electroluminescent element, characterized by comprising a cathode, a light-emitting layer and an anode in sequence, wherein the charge according to any one of claim 1 to claim 4 is included between the anode and the light-emitting layer A generation layer, the layer including the hole transport material and the electron accepting material is arranged on the side of the light emitting layer, and the layer including the electron transport material and the electron donating material is arranged on the side of the anode. 一種有機電激發光元件,其特徵在於,包括陰極、陽極,且在所述陰極與所述陽極之間具有兩層以上的發光層,其中,在所述發光層的其中一層與所述發光層的另一層之間包括如請求項1至請求項4中任一項所述的電荷產生層。 An organic electroluminescent element, characterized in that it comprises a cathode and an anode, and between the cathode and the anode, there are two or more light-emitting layers, wherein one of the light-emitting layers and the light-emitting layer The charge generation layer according to any one of claim 1 to claim 4 is included between another layer of the . 一種顯示裝置,其特徵在於,包括如請求項6至請求 項8中任一項所述的有機電激發光元件。 A display device, characterized in that it includes, such as request item 6 to request The organic electroluminescent element according to any one of Item 8. 一種照明裝置,其特徵在於,包括如請求項6至請求項8中任一項所述的有機電激發光元件。 A lighting device, characterized by comprising the organic electroluminescent element according to any one of claim 6 to claim 8. 一種有機薄膜太陽能電池,其特徵在於,包括如請求項1至請求項4中任一項所述的電荷產生層。An organic thin film solar cell characterized by comprising the charge generation layer according to any one of claim 1 to claim 4.
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