TWI754325B - 包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置 - Google Patents

包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置 Download PDF

Info

Publication number
TWI754325B
TWI754325B TW109124243A TW109124243A TWI754325B TW I754325 B TWI754325 B TW I754325B TW 109124243 A TW109124243 A TW 109124243A TW 109124243 A TW109124243 A TW 109124243A TW I754325 B TWI754325 B TW I754325B
Authority
TW
Taiwan
Prior art keywords
plasma processing
body portion
focus ring
substrate
processing apparatus
Prior art date
Application number
TW109124243A
Other languages
English (en)
Chinese (zh)
Other versions
TW202123299A (zh
Inventor
金龍洙
金亨源
鄭熙錫
Original Assignee
南韓商吉佳藍科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商吉佳藍科技股份有限公司 filed Critical 南韓商吉佳藍科技股份有限公司
Publication of TW202123299A publication Critical patent/TW202123299A/zh
Application granted granted Critical
Publication of TWI754325B publication Critical patent/TWI754325B/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW109124243A 2019-08-29 2020-07-17 包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置 TWI754325B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
KR20190106616 2019-08-29
KR10-2019-0106616 2019-08-29
KR20190113748 2019-09-16
KR10-2019-0113748 2019-09-16
KR1020190127675A KR102077974B1 (ko) 2019-08-29 2019-10-15 플라즈마 처리 수직도가 향상된 포커스링을 포함하는 플라즈마 처리 장치
KR10-2019-0127675 2019-10-15

Publications (2)

Publication Number Publication Date
TW202123299A TW202123299A (zh) 2021-06-16
TWI754325B true TWI754325B (zh) 2022-02-01

Family

ID=69514215

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109124243A TWI754325B (zh) 2019-08-29 2020-07-17 包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置

Country Status (3)

Country Link
KR (1) KR102077974B1 (ko)
CN (1) CN112447477B (ko)
TW (1) TWI754325B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102077975B1 (ko) * 2019-10-15 2020-02-14 주식회사 기가레인 플라즈마 처리 수직도가 향상된 플라즈마 처리 장치
CN118280802A (zh) * 2022-12-31 2024-07-02 江苏鲁汶仪器股份有限公司 一种聚焦环以及等离子体刻蚀设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW514996B (en) * 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US20080239691A1 (en) * 2007-03-27 2008-10-02 Tokyo Electron Limited Thermally conductive sheet and substrate mounting device including same
CN107610999A (zh) * 2017-08-28 2018-01-19 北京北方华创微电子装备有限公司 下电极机构及反应腔室
JP2019054113A (ja) * 2017-09-15 2019-04-04 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20190046439A (ko) * 2017-10-26 2019-05-07 에이피티씨 주식회사 히터 패턴을 내장한 웨이퍼 척 및 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070048357A (ko) * 2005-11-04 2007-05-09 주성엔지니어링(주) 균일한 플라즈마를 생성하는 정전척
JP2008078208A (ja) * 2006-09-19 2008-04-03 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
CN101303963B (zh) * 2007-05-11 2012-12-26 中芯国际集成电路制造(上海)有限公司 一种消除蚀刻图形偏移的方法及装置
KR101174816B1 (ko) * 2009-12-30 2012-08-17 주식회사 탑 엔지니어링 플라즈마 처리 장치의 포커스 링 및 이를 구비한 플라즈마 처리 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW514996B (en) * 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US20080239691A1 (en) * 2007-03-27 2008-10-02 Tokyo Electron Limited Thermally conductive sheet and substrate mounting device including same
CN107610999A (zh) * 2017-08-28 2018-01-19 北京北方华创微电子装备有限公司 下电极机构及反应腔室
JP2019054113A (ja) * 2017-09-15 2019-04-04 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20190046439A (ko) * 2017-10-26 2019-05-07 에이피티씨 주식회사 히터 패턴을 내장한 웨이퍼 척 및 제조 방법

Also Published As

Publication number Publication date
TW202123299A (zh) 2021-06-16
CN112447477B (zh) 2021-09-24
KR102077974B1 (ko) 2020-02-14
CN112447477A (zh) 2021-03-05

Similar Documents

Publication Publication Date Title
TWI754325B (zh) 包括具有改善的電漿處理垂直度的聚焦環的電漿處理裝置
JP2004235623A5 (ko)
KR100893956B1 (ko) 반도체 처리용 포커스링 및 플라즈마 처리 장치
JP4869610B2 (ja) 基板保持部材及び基板処理装置
KR101217409B1 (ko) 플라즈마 성막 장치
JP5808750B2 (ja) 傾斜側壁を備える静電チャック
JP2004235623A (ja) プラズマ処理装置及びフォーカスリング
TW201528323A (zh) 斜角蝕刻器用之可調式上部電漿排除區域環
JP5956564B2 (ja) フリップエッジシャドーフレーム
KR20140016837A (ko) 플라즈마 처리 챔버용 에지 링 어셈블리와 그 제조 방법
US11521836B2 (en) Plasma processing apparatus
CN111211080B (zh) 静电吸盘和包括该静电吸盘的等离子体处理装置
KR20030066759A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
TWI780467B (zh) 改善了等離子體處理垂直度的等離子體處理裝置
JP2003229408A (ja) プラズマ処理装置
TW202205333A (zh) 利用邊緣環和偏置電極幾何形狀的膜厚度均勻性改善
US20220051881A1 (en) Plasma Etching Apparatus and Method
TWI746113B (zh) 承載部及包括其的電漿處理裝置
US20240136159A1 (en) Metallic Shield For Stable Tape-Frame Substrate Processing
KR20070009159A (ko) 플라즈마 식각설비의 웨이퍼 서셉터
US11600511B2 (en) Substrate processing apparatus
TW201324577A (zh) 等離子體處理裝置及應用於等離子處理裝置的邊緣環
JPH0950897A (ja) プラズマ処理装置
JPH04271119A (ja) ドライエッチング装置
JP2001023967A (ja) 誘導結合型ドライエッチング装置