TWI729498B - 基板處理方法 - Google Patents

基板處理方法 Download PDF

Info

Publication number
TWI729498B
TWI729498B TW108133596A TW108133596A TWI729498B TW I729498 B TWI729498 B TW I729498B TW 108133596 A TW108133596 A TW 108133596A TW 108133596 A TW108133596 A TW 108133596A TW I729498 B TWI729498 B TW I729498B
Authority
TW
Taiwan
Prior art keywords
substrate
backside
dopant
back side
film
Prior art date
Application number
TW108133596A
Other languages
English (en)
Chinese (zh)
Other versions
TW202015095A (zh
Inventor
喬瑟夫Ｍ 拉尼許
亞倫穆爾 杭特
史瓦米奈森Ｔ 史林尼法森
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202015095A publication Critical patent/TW202015095A/zh
Application granted granted Critical
Publication of TWI729498B publication Critical patent/TWI729498B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/124—Preparing bulk and homogeneous wafers by processing the backside of the wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/40—Ion implantation into wafers, substrates or parts of devices into insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Recrystallisation Techniques (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Optics & Photonics (AREA)
TW108133596A 2015-11-09 2016-11-04 基板處理方法 TWI729498B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562252901P 2015-11-09 2015-11-09
US62/252,901 2015-11-09
US201662306150P 2016-03-10 2016-03-10
US62/306,150 2016-03-10

Publications (2)

Publication Number Publication Date
TW202015095A TW202015095A (zh) 2020-04-16
TWI729498B true TWI729498B (zh) 2021-06-01

Family

ID=58663719

Family Applications (2)

Application Number Title Priority Date Filing Date
TW108133596A TWI729498B (zh) 2015-11-09 2016-11-04 基板處理方法
TW105135819A TWI675393B (zh) 2015-11-09 2016-11-04 用於處理基板的背側之方法及工具

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW105135819A TWI675393B (zh) 2015-11-09 2016-11-04 用於處理基板的背側之方法及工具

Country Status (7)

Country Link
US (1) US10128197B2 (https=)
JP (1) JP6971229B2 (https=)
KR (2) KR102584138B1 (https=)
CN (3) CN108352298B (https=)
DE (1) DE112016005136T5 (https=)
TW (2) TWI729498B (https=)
WO (1) WO2017083037A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10418264B2 (en) * 2016-06-08 2019-09-17 Hermes-Epitek Corporation Assembling device used for semiconductor equipment
US10510575B2 (en) * 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US10916416B2 (en) * 2017-11-14 2021-02-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor wafer with modified surface and fabrication method thereof
JP7326275B2 (ja) 2017-12-01 2023-08-15 アプライド マテリアルズ インコーポレイテッド エッチング選択性の高いアモルファスカーボン膜
JP2020047617A (ja) * 2018-09-14 2020-03-26 キオクシア株式会社 基板処理装置、半導体装置の製造方法、および被加工基板
DE102019211447B4 (de) * 2019-07-31 2023-06-01 Robert Bosch Gmbh Verfahren zum Laserrichten von Führungsschienen
TWI889613B (zh) * 2021-04-27 2025-07-01 美商應用材料股份有限公司 用於半導體處理的應力與覆蓋管理
CN115812345A (zh) 2021-06-30 2023-03-17 长江存储科技有限责任公司 三维存储器装置及其形成方法
WO2023272614A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
WO2023272627A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
CN116368952A (zh) 2021-06-30 2023-06-30 长江存储科技有限责任公司 三维存储器装置及其形成方法
CN115836387B (zh) 2021-06-30 2026-01-23 长江存储科技有限责任公司 三维存储器装置及其形成方法
CN116058100B (zh) 2021-06-30 2025-12-30 长江存储科技有限责任公司 三维存储器装置及其形成方法
CN116018889B (zh) 2021-06-30 2026-01-23 长江存储科技有限责任公司 三维存储器装置及其形成方法
WO2023272625A1 (en) 2021-06-30 2023-01-05 Yangtze Memory Technologies Co., Ltd. Three-dimensional memory devices and methods for forming the same
US12394618B2 (en) * 2021-07-08 2025-08-19 Tokyo Electron Limited Method of adjusting wafer shape using multi-directional actuation films
CN113906542A (zh) * 2021-08-30 2022-01-07 长江存储科技有限责任公司 使用背面膜层沉积和激光退火的晶圆应力控制
US12094726B2 (en) 2021-12-13 2024-09-17 Applied Materials, Inc. Adapting electrical, mechanical, and thermal properties of package substrates
JP7809596B2 (ja) * 2022-06-15 2026-02-02 キオクシア株式会社 接合装置、接合方法、及び半導体装置の製造方法
TW202431354A (zh) * 2022-09-28 2024-08-01 美商應用材料股份有限公司 應力管理期間全域曲率的校正
CN115642112A (zh) * 2022-11-24 2023-01-24 西安奕斯伟材料科技有限公司 一种用于硅片的背封装置及背封方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050208776A1 (en) * 2004-03-22 2005-09-22 Texas Instruments Inc. Interface improvement by stress application during oxide growth through use of backside films
TW200627574A (en) * 2004-10-13 2006-08-01 Lam Res Corp Heat transfer system for improved semiconductor processing uniformity
US20070173045A1 (en) * 2006-01-23 2007-07-26 Mitsubishi Electric Corporation Method of manufacturing semiconductor device
US20080128019A1 (en) * 2006-12-01 2008-06-05 Applied Materials, Inc. Method of metallizing a solar cell substrate
JP2010225830A (ja) * 2009-03-24 2010-10-07 Mitsumi Electric Co Ltd 半導体装置の製造方法
US20110065274A1 (en) * 2009-08-25 2011-03-17 Rohm And Haas Electronic Materials Llc Enhanced method of forming nickel silicides
TW201119014A (en) * 2009-07-15 2011-06-01 Io Semiconductor Inc Semiconductor-on-insulator with back side heat dissipation

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296385A (en) 1991-12-31 1994-03-22 Texas Instruments Incorporated Conditioning of semiconductor wafers for uniform and repeatable rapid thermal processing
JPH05315371A (ja) * 1992-05-12 1993-11-26 Fujitsu Ltd 化合物半導体装置の製造方法
US6153524A (en) 1997-07-29 2000-11-28 Silicon Genesis Corporation Cluster tool method using plasma immersion ion implantation
JP3161450B2 (ja) * 1999-02-02 2001-04-25 日本電気株式会社 基板処理装置、ガス供給方法、及び、レーザ光供給方法
JP3505678B2 (ja) * 1999-08-25 2004-03-08 住友重機械工業株式会社 ウエハの歪修正装置
JP2001274048A (ja) * 2000-03-24 2001-10-05 Hitachi Ltd 半導体装置の製造方法及び加工装置
KR20020034492A (ko) 2000-11-02 2002-05-09 박종섭 반도체 소자의 제조방법
JP4653374B2 (ja) * 2001-08-23 2011-03-16 セイコーエプソン株式会社 電気光学装置の製造方法
US7432177B2 (en) 2005-06-15 2008-10-07 Applied Materials, Inc. Post-ion implant cleaning for silicon on insulator substrate preparation
US7781715B2 (en) 2006-09-20 2010-08-24 Fujifilm Corporation Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device
US7776746B2 (en) 2007-02-28 2010-08-17 Alpha And Omega Semiconductor Incorporated Method and apparatus for ultra thin wafer backside processing
US8846532B2 (en) 2007-02-28 2014-09-30 Alpha And Omega Semiconductor Incorporated Method and apparatus for ultra thin wafer backside processing
EP3573092B1 (en) 2008-05-02 2021-12-22 Applied Materials, Inc. System for non radial temperature control for rotating substrates
US20090278287A1 (en) * 2008-05-12 2009-11-12 Yun Wang Substrate processing with reduced warpage and/or controlled strain
US20100109060A1 (en) 2008-11-06 2010-05-06 Omnivision Technologies Inc. Image sensor with backside photodiode implant
JP2011119472A (ja) * 2009-12-03 2011-06-16 Panasonic Corp 半導体製造装置
JP5615207B2 (ja) * 2011-03-03 2014-10-29 株式会社東芝 半導体装置の製造方法
CN102420176A (zh) * 2011-06-15 2012-04-18 上海华力微电子有限公司 一种改善半导体晶片翘曲的方法
US8466530B2 (en) 2011-06-30 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Co-implant for backside illumination sensor
JP6545460B2 (ja) * 2012-02-29 2019-07-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ロードロック構成内の除害・剥離処理チャンバ
CN103094098A (zh) * 2013-01-14 2013-05-08 陆伟 一种解决晶圆破片的方法
US9318367B2 (en) * 2013-02-27 2016-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structure with different fin heights and method for forming the same
JP2015012241A (ja) * 2013-07-01 2015-01-19 ソニー株式会社 撮像素子およびその製造方法、ならびに電子機器
KR102133490B1 (ko) * 2013-11-11 2020-07-13 에스케이하이닉스 주식회사 트랜지스터, 트랜지스터의 제조 방법 및 트랜지스터를 포함하는 전자장치
US9824894B2 (en) * 2014-04-09 2017-11-21 Tokyo Electron Limited Method for correcting wafer bow from overlay
US9159621B1 (en) * 2014-04-29 2015-10-13 Applied Materials, Inc. Dicing tape protection for wafer dicing using laser scribe process
JP6510310B2 (ja) * 2014-05-12 2019-05-08 ローム株式会社 半導体装置
US9881788B2 (en) * 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
WO2015195272A1 (en) * 2014-06-20 2015-12-23 Applied Materials, Inc. Methods for reducing semiconductor substrate strain variation
US9613870B2 (en) * 2015-06-30 2017-04-04 International Business Machines Corporation Gate stack formed with interrupted deposition processes and laser annealing

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050208776A1 (en) * 2004-03-22 2005-09-22 Texas Instruments Inc. Interface improvement by stress application during oxide growth through use of backside films
TW200627574A (en) * 2004-10-13 2006-08-01 Lam Res Corp Heat transfer system for improved semiconductor processing uniformity
US20070173045A1 (en) * 2006-01-23 2007-07-26 Mitsubishi Electric Corporation Method of manufacturing semiconductor device
CN101009221A (zh) * 2006-01-23 2007-08-01 三菱电机株式会社 半导体装置的制造方法
US20080128019A1 (en) * 2006-12-01 2008-06-05 Applied Materials, Inc. Method of metallizing a solar cell substrate
JP2010225830A (ja) * 2009-03-24 2010-10-07 Mitsumi Electric Co Ltd 半導体装置の製造方法
TW201119014A (en) * 2009-07-15 2011-06-01 Io Semiconductor Inc Semiconductor-on-insulator with back side heat dissipation
US20110065274A1 (en) * 2009-08-25 2011-03-17 Rohm And Haas Electronic Materials Llc Enhanced method of forming nickel silicides

Also Published As

Publication number Publication date
KR102742588B1 (ko) 2024-12-16
TW201727696A (zh) 2017-08-01
KR102584138B1 (ko) 2023-10-04
WO2017083037A1 (en) 2017-05-18
JP6971229B2 (ja) 2021-11-24
TWI675393B (zh) 2019-10-21
CN116435172A (zh) 2023-07-14
JP2018536990A (ja) 2018-12-13
DE112016005136T5 (de) 2018-07-26
CN116435167A (zh) 2023-07-14
US20170133328A1 (en) 2017-05-11
CN108352298A (zh) 2018-07-31
TW202015095A (zh) 2020-04-16
US10128197B2 (en) 2018-11-13
KR20230152092A (ko) 2023-11-02
KR20180069920A (ko) 2018-06-25
CN108352298B (zh) 2023-04-18

Similar Documents

Publication Publication Date Title
TWI729498B (zh) 基板處理方法
US10020204B2 (en) Bottom processing
TWI692047B (zh) 用於epi製程之晶圓加熱的二極體雷射
EP3329510B1 (en) Rotating substrate laser anneal
US7838431B2 (en) Method for surface treatment of semiconductor substrates
KR102126119B1 (ko) 열처리 방법
US20130206747A1 (en) Heat treatment apparatus for heating substrate by irradiating substrate with flash of light
US7643736B2 (en) Apparatus and method for manufacturing semiconductor devices
CN102365719A (zh) 通过移动来快速冷却基板的方法
US20110185971A1 (en) Laser doping
TWI768238B (zh) 半導體形成裝置與半導體裝置的形成方法
JP4391537B2 (ja) 半導体装置
JP4585027B2 (ja) 半導体装置
JP3949122B2 (ja) 半導体装置の作製方法
TW202029384A (zh) 用於epi製程之晶圓加熱的二極體雷射
JP2004047991A (ja) 半導体装置